WO2018152935A1 - 一种oled器件的封装结构及其制备方法、金属掩膜板 - Google Patents

一种oled器件的封装结构及其制备方法、金属掩膜板 Download PDF

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WO2018152935A1
WO2018152935A1 PCT/CN2017/079439 CN2017079439W WO2018152935A1 WO 2018152935 A1 WO2018152935 A1 WO 2018152935A1 CN 2017079439 W CN2017079439 W CN 2017079439W WO 2018152935 A1 WO2018152935 A1 WO 2018152935A1
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layer
barrier layer
barrier
oled device
layers
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French (fr)
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李文杰
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations

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  • the present invention relates to the field of OLED device technologies, and in particular, to a package structure of an OLED device, a method for fabricating the same, and a metal mask.
  • an inorganic layer and an organic layer are alternately disposed on an OLED device to form a package structure to block water and oxygen; wherein the inorganic layer is mainly used to achieve effective barrier to water and oxygen, and the thickness of the organic layer is increased. At the same time, its water and oxygen barrier capacity also increases.
  • the inorganic layer is subjected to a large bending stress, which is easily detached from the OLED device, and the bending performance of the OLED device is affected.
  • the present invention provides a package structure of an OLED device, a method for fabricating the same, and a metal mask.
  • the package structure of the OLED device of the present invention can improve the bending performance of the OLED device.
  • a technical solution proposed by the present invention is to provide a method for preparing an OLED device package structure, the preparation method comprising:
  • the upper barrier layer covers the patterned region of the next barrier layer
  • the present invention also proposes a technical solution: a package structure of an OLED device is proposed, the package structure comprising:
  • a plurality of alternating barrier layers and buffer layers over the OLED device at least one of the barrier layers being a patterned structure; the buffer layer being filled in a patterned region of the barrier layer.
  • Another technical solution proposed by the present invention is to provide a metal mask for manufacturing a barrier layer of a package structure of the above OLED device;
  • the metal mask includes a non-hollowed region and a hollowed out region; the hollowed out region is discretely disposed in the non-hollowed region; a coating material passes through the hollowed out region and is blocked by the non-hollowed region to form The patterned barrier layer corresponding to the non-hollowed region and the hollowed out region.
  • the package structure of the OLED device provided by the present invention includes several layers of alternating barrier layers and buffer layers above the OLED device, at least one of the barrier layers being a patterned structure; Filled in the patterned area of the barrier layer.
  • the barrier layer By filling the buffer layer in the patterned region of the barrier layer, the barrier layer is no longer a one-sided structure, but a spacer structure filled with a buffer layer in the patterned region; when the OLED device is bent, it is filled in The buffer layer in the patterned region releases the bending stress on the barrier layer, thereby reducing the bending stress on the barrier layer, so that when the OLED device is bent to a large extent, the barrier layer does not fall off from the OLED device, and further Improves the bending performance of OLED devices.
  • FIG. 1 is a schematic structural view of a package structure of an OLED device in the prior art
  • FIG. 2 is a schematic structural view of a first embodiment of a package structure of an OLED device of the present invention
  • FIG. 3 is a schematic structural view of a second embodiment of a package structure of an OLED device of the present invention.
  • FIG. 4 is a schematic structural view of a third embodiment of a package structure of an OLED device of the present invention.
  • FIG. 5 is a schematic structural view of a fourth embodiment of a package structure of an OLED device of the present invention.
  • 6a-6e are schematic views of the patterned structure of the barrier layer of FIGS. 2 to 5;
  • FIG. 7 is a schematic flow chart of a first embodiment of a method for fabricating an OLED device package structure according to the present invention.
  • FIG. 8 is a schematic flow chart of a second embodiment of a method for fabricating an OLED device package structure according to the present invention.
  • FIG. 9 is a schematic flow chart of a third embodiment of a method for fabricating an OLED device package structure according to the present invention.
  • FIG. 10 is a schematic flow chart of a fourth embodiment of a method for fabricating an OLED device package structure according to the present invention.
  • 11a-11e are schematic views showing the structure of an embodiment of the metal mask of the present invention.
  • FIG. 1 is a schematic structural diagram of a package structure of an OLED device in the prior art.
  • the OLED device 12 is fabricated on a transparent flexible substrate 11, and the package structure 100 of the OLED device 12 is an overlying barrier layer 13, 15, 17 and a buffer layer 14, 16 alternately formed on the OLED device 12.
  • the barrier layers 13, 15, 17 are used to effectively block water oxygen
  • the buffer layers 14, 16 are used to cover the defects of the barrier layers 13, 15, 17 to achieve planarization.
  • the barrier layers 13, 15, 17 and the buffer layers 14, 16 are also bent, and the barrier layers 13, 15, 17 and the buffer layers 14, 16 are subjected to a certain bending stress.
  • the barrier layers 13, 15, 17 are overlaid over the OLED device 12, the barrier layers 13, 15, 17 are subject to greater bending stress, and when the OLED device 12 is bent to a greater extent, the barrier layer 13, 15,17 may fall off the OLED device 12 due to the influence of bending stress. In order to avoid the detachment of the barrier layers 13, 15, 17, the OLED device 12 cannot be bent greatly, which has a large limitation on the bending performance of the OLED device 12.
  • the following OLED device package structure is proposed, and the package structure includes several layers above the OLED device.
  • the alternating barrier layer and the buffer layer, at least one of the barrier layers is a patterned structure; the buffer layer is filled in the patterned region of the barrier layer.
  • FIG. 2 is a schematic structural view of a first embodiment of a package structure of an OLED device of the present invention.
  • the number of layers of the barrier layer and the buffer layer are both two layers (it is worth noting that the number of layers of the barrier layer and the buffer layer can be set according to actual needs, Implementation The example is not limited thereto, and the package structure 200 shown in FIG. 2 is only an example).
  • the barrier layer comprises a first barrier layer 23 and a second barrier layer 25.
  • the buffer layer includes a first buffer layer 24 and a second buffer layer 26.
  • the first barrier layer 23 and the second barrier layer 25 are both patterned structures, and the first buffer layer 24 and the second buffer layer 26 are filled in the patterned regions of the first barrier layer 23 and the second barrier layer 25, respectively.
  • the barrier layer is a thin film layer formed of an inorganic material
  • the buffer layer is a thin film layer formed of an organic polymer.
  • the number of layers of the barrier layer and the buffer layer is set between 2 and 5 layers. If the number of layers of the barrier layer and the buffer layer is increased, the overall thickness of the OLED device is also increased.
  • the water layer is effectively blocked by the barrier layer, and the buffer layer filled in the patterned region of the barrier layer can release the bending stress received by the barrier layer.
  • the barrier layer is disposed as a patterned patterned structure, and the buffer layer is filled in the patterned region of the barrier layer. Due to the presence of the patterned regions of the barrier layer, the barrier layer is no longer a full-surface structure, but a spaced apart structure, and the patterned regions are filled with a buffer layer for releasing bending stress.
  • the bending stress of the barrier layer of the patterned structure is reduced, and even if the OLED device is bent to a large extent, the barrier layer is not easily detached from the OLED device, thereby improving the bending performance of the OLED device.
  • the stability of the OLED device is also improved.
  • the buffer layer filled in the patterned region of the barrier layer does not have the barrier property against water and oxygen, in order to ensure that the water-oxygen barrier of the package structure meets the preparation requirements, it is necessary to make the barrier layer of the upper layer to the next layer.
  • the patterned area of the barrier layer is covered.
  • the upper barrier layer covers the patterned region of the next barrier layer. That is, as shown in FIG. 2, the second barrier layer 25 covers the patterned region of the first barrier layer 23, and correspondingly, the second barrier layer 25 covers the first buffer layer 24.
  • the thickness of the plurality of barrier layers may be different.
  • the closer to the OLED device the thicker the barrier layer. Since the barrier stress that is closer to the barrier layer of the OLED device is smaller in the several barrier layers when the OLED device is bent, the bending stress that is further away from the barrier layer of the OLED device is greater. Therefore, several layers of barrier layers can be set to a gradual structure.
  • the barrier layer close to the OLED device can be set thicker due to the less bending stress it receives. Thick; the barrier layer away from the OLED device can be set thinner due to its large bending stress.
  • the thickness of the first barrier layer 23 is greater than the thickness of the second barrier layer 25; the thickness of the first barrier layer 23 may be set between 0.1 micrometers and 10 micrometers. In this way, the blocking requirement of the water-oxygen of the package structure can be satisfied, and the bending stress of each layer of the barrier layer can be reasonably distributed, so that the barrier layer of a certain layer does not fall off due to excessive bending stress.
  • FIG. 3 is a schematic structural view of a second embodiment of a package structure of an OLED device of the present invention.
  • the patterned barrier layers 23, 25 in FIG. 3 are the same as the barrier layers 23, 25 in FIG. 2, and the buffer layers 24, 26 are also filled in the patterned regions of the barrier layers 23, 25.
  • the package structure 300 shown in FIG. 3 further includes a third barrier layer 27 disposed above the second barrier layer 25 and the second buffer layer 26. Among the three barrier layers 23, 25, 27, the third barrier layer 27 is the most The upper barrier layer.
  • the third barrier layer 27 covers the second barrier layer 25 and the second buffer layer 26 thereunder.
  • the remaining barrier layers except the uppermost barrier layer are patterned structures.
  • the uppermost barrier layer covers the barrier layer and the buffer layer of the next layer.
  • a barrier layer covering the uppermost layer of the barrier layer and the buffer layer is disposed over the barrier layer of the patterned structure and the buffer layer filled in the patterned region to make the package structure more complete and improve the package structure. Water blocking ability.
  • the thickness of the first barrier layer 23 is greater than the thickness of the second barrier layer 25, and the thickness of the second barrier layer 25 is greater than the thickness of the third barrier layer 27.
  • the thickness of the first barrier layer 23 may be set between 0.1 micrometers and 10 micrometers
  • the thickness of the third barrier layer 27 may be set between 100 nanometers and 2000 nanometers
  • the thickness of the second barrier layer 25 is disposed on the first barrier layer and The thickness of the third barrier layer may be between.
  • FIG. 4 is a schematic structural view of a third embodiment of a package structure of an OLED device of the present invention.
  • the patterned barrier layer and the uppermost barrier layer of the package structure 400 shown in FIG. 4 are the same as the package structure 300 shown in FIG.
  • the package structure 400 illustrated in FIG. 4 further includes a third buffer layer 28 disposed over the second barrier layer 25 and the second buffer layer 26, and the third barrier layer 27 is disposed over the third buffer layer 28.
  • the third buffer layer 28 covers the second barrier layer 25 and the second buffer layer 26 under the entire surface thereof, and the third barrier layer 27 covers the third buffer layer 28 over the entire surface.
  • the uppermost buffer layer covers the buffer layer and the barrier layer of the next layer, and the uppermost barrier layer covers the uppermost buffer layer.
  • the barrier layer is an inorganic layer, it has defects in preparation. Therefore, the buffer layer of the uppermost layer is disposed to cover the buffer layer and the barrier layer of the next layer, and the buffer layer of the upper layer is used to compensate the layer of the lower layer. The defects of the barrier layer and the planarization of the package structure are achieved.
  • FIG. 5 is a schematic structural diagram of a fourth embodiment of a package structure of an OLED device of the present invention.
  • the package structure 500 of the present embodiment further includes an organic flat layer 29 disposed between the lowermost barrier layer 23 and the OLED device 22 in the barrier layer.
  • the organic flat layer in this embodiment can cover pinholes generated by the cathode layer of the OLED device during the preparation process, as well as particle defects and the like.
  • the barrier layer is formed of an inorganic substance having a water oxygen barrier property; the inorganic substance may be a metal nitride or a metal oxynitride One or more of them.
  • the metal nitride may be aluminum oxide, silicon nitride, silicon oxide or zirconium oxide.
  • the buffer layer is formed as an organic polymer, and the organic polymer may be one or more of a polypropylene type, a polyester type, or a polyamide; in addition, the organic substance may also be a silicon-rich resin or a silicon-based carbon oxide. .
  • the buffer layer since the buffer layer is filled in the patterned region of the barrier layer instead of being coated on the barrier layer surface, it is possible to prevent the overflow of the organic ink droplets for preparing the buffer layer when preparing the buffer layer. flow.
  • the patterned structure of the barrier layer is a plurality of parallel rectangles, a plurality of elliptical shapes or a plurality of polygons.
  • the polygon has a plurality of rectangles of different widths alternately connected.
  • the patterned structure of the barrier layer is a plurality of rectangles and a plurality of elliptical shapes interlaced with each other. It is to be noted that the present embodiment is only an example of the above figure in the patterning structure. In a specific application, the patterning structure may be set according to actual requirements, which is not specifically limited in this embodiment.
  • FIG. 7 is a schematic flow chart of a first embodiment of a method for fabricating an OLED device package structure according to the present invention. As shown in FIG. 7, the preparation method comprises the following steps:
  • the metal mask Forming a barrier layer of the patterned structure over the OLED device using a metal mask, the metal mask
  • the hollowed out regions and non-hollowed regions having corresponding patterns are designed as required, and the material for forming the barrier layer forms a corresponding patterned structure over the OLED device through the hollowed out regions.
  • the material is an inorganic material.
  • the inorganic substance is one or more of a metal oxide, a metal nitride, and a metal oxynitride.
  • the pattern of the hollowed-out area on the metal mask is fixed, and the metal mask can be moved horizontally, vertically, or rotated as needed to obtain more different patterns and different patterns.
  • the barrier of the structure is fixed, and the metal mask can be moved horizontally, vertically, or rotated as needed to obtain more different patterns and different patterns.
  • the buffer layer is filled in the patterned region of the barrier layer by spin coating, ink jet printing, nozzle printing, or chemical vapor deposition.
  • the material for preparing the buffer layer is a curable organic polymer, wherein the curing includes at least one of heat curing and ultraviolet curing. Filling the buffer layer in the patterned region of the barrier layer, on the one hand, can release the bending stress of the barrier layer by the filled buffer layer, and on the other hand can prevent the overflow of the organic ink droplets for forming the buffer layer during the preparation process. .
  • the organic polymer may be a resin having a viscosity of 300 to 700 mPas and requiring curing for 60 to 90 minutes in an environment of 80 to 100 degrees Celsius.
  • a package structure of the OLED device having a plurality of alternating barrier layers and buffer layers as shown in FIG. 2 can be formed on the OLED device. It can be understood that, by determining the number of times of repeating step S01 and step S02 as needed, a barrier layer and a buffer layer having a number of layers corresponding to the number of times can be formed.
  • the thickness of the barrier layer closer to the OLED device is greater when the step S01 is repeated to prepare the barrier layer; wherein the barrier layer closest to the OLED device has a thickness of 0.1 micrometer to 10 micrometers.
  • the thickness of each buffer layer is the same as the thickness of the corresponding barrier layer. Since the thickness of the barrier layer gradually decreases as it moves away from the OLED device, the thickness of the corresponding buffer layer also gradually decreases, and thus the curing time required for the buffer layer can be correspondingly shortened.
  • the OLED device and its package structure are completely stripped from the substrate, ie, a flexible OLED device is formed.
  • the OLED device and its package structure can be stripped from the substrate using laser lift-off techniques.
  • FIG. 8 is a flow chart of a second embodiment of a method for fabricating an OLED device package structure according to the present invention. Schematic diagram. This embodiment is improved on the basis of the first embodiment of the preparation method shown in FIG. 7. After the step S02, the embodiment further includes the following steps:
  • steps S01 and S02 alternating barrier layers and buffer layers are formed. Steps S01 and S02 are repeated to form a plurality of alternating barrier layers and buffer layers. At this time, alternating barrier layers and buffer layers are formed. Further, a buffer layer is formed, which can cover the barrier layer and the buffer layer of the next layer. As such, a package structure of the OLED device as shown in FIG. 3 is formed.
  • FIG. 9 is a schematic flow chart of a third embodiment of a method for fabricating an OLED device package structure according to the present invention. This embodiment is improved on the basis of the second embodiment of the preparation method shown in FIG. 8. After the step S03, the embodiment further includes the following steps:
  • Forming a barrier layer over the uppermost buffer layer can increase the ability of the package structure to block water oxygen. As such, a package structure of the OLED device as shown in FIG. 4 is formed.
  • FIG. 10 is a schematic flow chart of a fourth embodiment of a method for fabricating an OLED device package structure according to the present invention. This embodiment is improved on the basis of the third embodiment of the preparation method shown in FIG. 9. Before the step S01, the embodiment further includes the following steps:
  • an organic flat layer is formed on the OLED device, and the defect existing in the uppermost cathode layer of the OLED device is passed through the organic flat layer. Coverage and compensation. An alternating barrier layer and buffer layer are then formed on the organic planar layer.
  • the formed OLED device package structure is referred to FIG. 4.
  • the present invention also proposes a metal mask for fabricating the package structure of the OLED device shown in FIGS. 2 to 4 and 6.
  • Figures 11a-11e are schematic views of the structure of an embodiment of the metal mask of the present invention.
  • the metal mask of the present embodiment includes a non-hollowed region 31 and a hollowed out region 32; the hollowed region 32 is discretely disposed in the non-hollowed region 31; the coating material is from the crucible
  • the void region 32 passes through and is blocked by the non-hollowed region 31 to form a patterned barrier layer corresponding to the non-hollowed region 31 and the hollowed out region 32.
  • the shape of the hollowed out area may be a plurality of rectangles, a plurality of ovals or a number of polygons.
  • the plurality of polygons are formed by alternately connecting a plurality of rectangles having different widths.
  • the resulting patterned structure of the barrier layer is also different depending on the shape of the hollow region.
  • the metal mask can be horizontally translated or vertically translated according to actual needs during the preparation process to obtain a more shaped patterned structure; the interleaved patterned structures can be obtained by rotating the metal mask.

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Abstract

一种OLED器件（22）的封装结构（200）及其制备方法、金属掩膜板；OLED器件的封装结构包括在OLED器件上方的若干层交替的阻挡层（23，25）和缓冲层（24，26），至少一层阻挡层为图案化结构；缓冲层填充在阻挡层的图案化区域内。将阻挡层设置为图案化结构，并将缓冲层填充在阻挡层的图案化区域内，当OLED器件发生弯曲时，通过阻挡层的图案化区域内填充的缓冲层释放阻挡层承受的弯曲应力，减小阻挡层承受的弯曲应力，使OLED器件能够弯曲更大的幅度，进而提高OLED器件的弯曲性能。

Description

一种OLED器件的封装结构及其制备方法、金属掩膜板 【技术领域】
本发明涉及OLED器件技术领域，具体而言涉及一种OLED器件的封装结构及其制备方法、金属掩膜板。
【背景技术】
随着显示技术的发展，柔性显示技术逐渐成为平板显示领域的研究热点，OLED显示器也逐渐成为是显示器发展的大方向。OLED显示器中柔性OLED器件成为研究热点，其中，柔性OLED器件对封装结构的要求非常高，水汽透过率小于10-6g/m2/day，氧气穿透率小于10-5cc/m2/day；因此封装结构在OLED器件制作中处于重要的位置，是影响产品良率的关键因素之一。
现有技术中，常采用在OLED器件上交替设置无机层和有机层的方式来形成封装结构，以阻隔水氧；其中，主要依靠无机层来实现对水氧的有效阻隔，有机层的厚度增加时，其水氧阻隔能力也随之增加。但当OLED器件弯曲较大幅度的弯曲时，无机层会承受较大的弯曲应力，非常容易从OLED器件上脱落，导致OLED器件的弯曲性能受到影响。
【发明内容】
有鉴于此，本发明提供一种OLED器件的封装结构及其制备方法、金属掩膜板，本发明的OLED器件的封装结构能够提高OLED器件的弯曲性能。
为解决上述技术问题，本发明提出的一个技术方案是：提供一种OLED器件封装结构的制备方法，该制备方法包括：
在OLED器件的上方形成若干层交替的阻挡层和缓冲层；其中，至少一层所述阻挡层通过掩膜板刻蚀形成图案化结构；将所述缓冲层填充在所述阻挡层的图案化区域内；
制备若干层所述阻挡层时，上一层阻挡层覆盖下一层阻挡层的图案化区域；
在交替的阻挡层和缓冲层上形成整面覆盖该阻挡层和缓冲层的最上层缓冲 层。
本发明还提出的一个技术方案：提出一种OLED器件的封装结构，该封装结构包括：
在OLED器件上方的若干层交替的阻挡层和缓冲层，至少一层所述阻挡层为图案化结构；所述缓冲层填充在所述阻挡层的图案化区域内。
本发明还提出的另一个技术方案：提供一种金属掩膜板，该金属掩膜板用于制造上述OLED器件的封装结构的阻挡层；
所述金属掩膜板包括非镂空区和镂空区；所述镂空区离散的设置在所述非镂空区内；镀膜材料从所述镂空区中通过，并被所述非镂空区阻挡，以形成与所述非镂空区和镂空区对应的图案化的所述阻挡层。
有益效果：区别于现有技术，本发明提供的OLED器件的封装结构包括在OLED器件上方的若干层交替的阻挡层和缓冲层，至少一层所述阻挡层为图案化结构；所述缓冲层填充在所述阻挡层的图案化区域内。通过将缓冲层填充在阻挡层的图案化区域内，使得阻挡层不再是一个整面的结构，而是在图案化区域内填充有缓冲层的间隔的结构；当OLED器件弯曲时，填充在图案化区域内的缓冲层对阻挡层承受的弯曲应力进行释放，进而减小阻挡层承受的弯曲应力，使得OLED器件发生较大幅度的弯曲时，阻挡层也不会从OLED器件上脱落，进而提升了OLED器件的弯曲性能。
【附图说明】
图1是现有技术中OLED器件的封装结构的结构示意图；
图2是本发明OLED器件的封装结构第一实施例的结构示意图；
图3是本发明OLED器件的封装结构第二实施例的结构示意图；
图4是本发明OLED器件的封装结构第三实施例的结构示意图；
图5是本发明OLED器件的封装结构第四实施例的结构示意图；
图6a-图6e是图2至图5中阻挡层的图案化结构的示意图；
图7是本发明OLED器件封装结构的制备方法第一实施例的流程示意图；
图8是本发明OLED器件封装结构的制备方法第二实施例的流程示意图；
图9是本发明OLED器件封装结构的制备方法第三实施例的流程示意图；
图10是本发明OLED器件封装结构的制备方法第四实施例的流程示意图；
图11a-图11e是本发明金属掩膜板实施例的结构示意图。
【具体实施方式】
为使本领域的技术人员更好地理解本发明的技术方案，下面结合附图和具体实施例对本发明所提供的一种OLED器件的封装结构及其制备方法、金属掩膜板做进一步详细描述。在附图中，相同的标号在整个说明书和附图中用来表示相同的结构和区域。
参阅图1，图1是现有技术中OLED器件的封装结构的结构示意图。如图1所示，OLED器件12制备在透明的柔性基底11上，OLED器件12的封装结构100是在OLED器件12上交替形成的互相覆盖的阻挡层13，15，17和缓冲层14，16。其中，阻挡层13，15，17用以有效阻隔水氧，缓冲层14，16用来覆盖阻挡层13，15，17的缺陷，实现平坦化。当OLED器件12发生弯曲时，阻挡层13，15，17和缓冲层14，16也会随之发生弯曲，此时阻挡层13，15，17和缓冲层14，16会受到一定的弯曲应力。由于阻挡层13，15，17是整面覆盖在OLED器件12上方的，因此阻挡层13，15，17会受到较大的弯曲应力，当OLED器件12弯曲的幅度较大时，阻挡层13，15，17会由于弯曲应力的影响而从OLED器件12上脱落。为了避免阻挡层13，15，17的脱落，OLED器件12不能大幅度的弯曲，对OLED器件12的弯曲性能有较大的限制。
本发明为了解决现有技术中由于阻挡层承受的弯曲应力较大，导致阻挡层从OLED器件上脱落的问题，提出了如下的OLED器件的封装结构，该封装结构包括在OLED器件上方的若干层交替的阻挡层和缓冲层，至少一层阻挡层为图案化结构；缓冲层填充在阻挡层的图案化区域内。
参阅图2，图2是本发明OLED器件的封装结构第一实施例的结构示意图。在图2所示的封装结构200的一种应用例中，阻挡层和缓冲层的层数均为2层(值得注意的是，阻挡层和缓冲层的层数可以根据实际需求进行设置，本实施 例并没对此做出限定，图2所示的封装结构200仅是一种示范例)。其中，阻挡层包括第一阻挡层23和第二阻挡层25。缓冲层包括第一缓冲层24和第二缓冲层26。第一阻挡层23和第二阻挡层25均为图案化结构，第一缓冲层24和第二缓冲层26分别填充在第一阻挡层23和第二阻挡层25的图案化区域内。
本实施例中，阻挡层为无机物形成的薄膜层，缓存层为有机聚合物形成的薄膜层。可选的，阻挡层和缓冲层的层数设置在2至5层之间，若阻挡层和缓冲层的层数增加，OLED器件的整体厚度也会随之增加。
本实施例中，通过阻挡层对水氧进行有效阻隔，填充在阻挡层的图案化区域内的缓冲层能够对阻挡层受到的弯曲应力进行释放。
本实施例将阻挡层设置为刻蚀有图案的图案化结构，在阻挡层的图案化区域内填充缓冲层。由于阻挡层的图案化区域的存在，使得阻挡层不再是整面的结构，而是间隔设置的结构，且图案化区域内填充有用于释放弯曲应力的缓冲层。当OLED器件发生弯曲时，图案化结构的阻挡层承受的弯曲应力减小，即使OLED器件发生较大幅度的弯曲，阻挡层也不容易从OLED器件上脱落，提高了OLED器件的弯曲性能。此外，由于阻挡层不易脱落，也提高了OLED器件的稳定性。
由于在阻挡层的图案化区域内填充的缓冲层并不具备对水氧的阻隔能力，为了保证封装结构对水氧的阻隔达到制备需求，需要使上一层的阻挡层能够对下一层的阻挡层的图案化区域进行覆盖。
进一步的，若干层阻挡层中，上一层阻挡层覆盖下一层阻挡层的图案化区域。即如图2所示，第二阻挡层25覆盖第一阻挡层23的图案化区域，相应的，即为第二阻挡层25覆盖第一缓冲层24。
本实施例中，若干层阻挡层厚度可以不同，可选的，若干层阻挡层中，越靠近OLED器件，阻挡层的厚度越厚。由于当OLED器件弯曲时，若干层阻挡层中，越靠近OLED器件的阻挡层承受的弯曲应力越小，越远离OLED器件的阻挡层承受的弯曲应力越大。因此，可以将若干层阻挡层厚度设置为渐变的结构。靠近OLED器件的阻挡层由于其承受的弯曲应力较小，其厚度可以设置较 厚；远离OLED器件的阻挡层由于其承受的弯曲应力较大，其厚度可以设置较薄。如图2所示的封装结构，其中，第一阻挡层23的厚度大于第二阻挡层25的厚度；第一阻挡层23的厚度可以设置在0.1微米至10微米之间。如此，既可以满足封装结构对水氧的阻隔需求，又能使每一层阻挡层承受的弯曲应力得到合理分布，不至于某一层阻挡层由于弯曲应力过大而脱落。
参阅图3，图3是本发明OLED器件的封装结构第二实施例的结构示意图。如图3所示的封装结构300，图3中图案化的阻挡层23，25与图2中的阻挡层23，25相同，缓冲层24，26同样填充在阻挡层23，25的图案化区域内。图3所示的封装结构300还包括设置在第二阻挡层25和第二缓冲层26上方的第三阻挡层27，在三层阻挡层23，25，27中，第三阻挡层27为最上层的阻挡层。第三阻挡层27整面覆盖其下方的第二阻挡层25和第二缓冲层26。
即在若干层阻挡层中，除最上层的阻挡层外其余的阻挡层均为图案化结构。其中，最上层的阻挡层整面覆盖其下一层的阻挡层和缓冲层。
在图案化结构的阻挡层和填充在图案化区域内的缓存层上方在设置一层能够整面覆盖该阻挡层和缓存层的最上层的阻挡层，以使封装结构更加完整，提高封装结构对水氧的阻挡能力。
进一步的，图3所示的封装结构300中，第一阻挡层23的厚度大于第二阻挡层25的厚度，第二阻挡层25的厚度大于第三阻挡层27的厚度。第一阻挡层23的厚度可以设置在0.1微米至10微米之间，第三阻挡层27的厚度可以设置在100纳米至2000纳米之间，第二阻挡层25的厚度设置在第一阻挡层和第三阻挡层的厚度之间即可。
参阅图4，图4是本发明OLED器件的封装结构第三实施例的结构示意图。如图4所示，图4所示的封装结构400的图案化的阻挡层以及最上层阻挡层与图3所示的封装结构300相同。此外，图4所示的封装结构400还包括设置在第二阻挡层25和第二缓冲层26上方的第三缓冲层28，第三阻挡层27设置在第三缓冲层28上方。第三缓冲层28整面覆盖其下方的第二阻挡层25和第二缓冲层26，第三阻挡层27整面覆盖第三缓冲层28。
即在若干层缓冲层中，最上层的缓冲层整面覆盖其下一层的缓冲层和阻挡层，最上层的阻挡层整面覆盖最上层缓冲层。
由于阻挡层为无机层，其在制备时会存在缺陷，因此，设置最上层的缓冲层，用以覆盖其下一层的缓冲层和阻挡层，利用最上层的缓存层补偿其下一层的阻挡层的缺陷，并实现封装结构的平坦化。
进一步的，参阅图5，图5是本发明OLED器件的封装结构第四实施例的结构示意图。如图5所示，本实施例的封装结构500还包括有机平坦层29，该有机平坦层29设置在阻挡层中的最下层阻挡层23和OLED器件22之间。
本实施例中的有机平坦层能够覆盖OLED器件的阴极层在制备过程中产生的针孔以及粒子缺陷等。
在图2至图5所示的封装结构的第一实施例至第四实施例中，形成阻挡层的为具有水氧阻隔能力的无机物；该无机物可以是金属氮化物或金属氮氧化物中的一种或多种。其中，金属氮化物可以为三氧化二铝、氮化硅、氧化硅或氧化锆等。形成缓冲层为有机聚合物，该有机聚合物可以是聚丙烯类，聚酯类，或者聚酰胺的一种或者多种；此外，该有机物还可以是富含硅的树脂或硅基碳氧化物。在本实施例中，由于缓冲层是填充在阻挡层的图案化区域内，而不是涂覆在阻挡层表面，因此能够防止在制备缓冲层时，防止用于制备缓冲层的有机物墨滴的溢流。
如图6a至图6e所示，阻挡层的图案化结构为平行的多个长方形、多个椭圆形或多个多边形。其中多边形有多个宽度不同的长方形交替连接形成。此外，阻挡层的图案化结构为相互交错的多个长方形、多个椭圆形。值得注意的是，本实施例仅是对图案化结构的进行了以上图形的举例，在具体的应用中，图案化结构可以根据实际需求进行设置，本实施例并不做具体限定。
参阅图7，图7是本发明OLED器件封装结构的制备方法第一实施例的流程示意图。如图7所示，该制备方法包括如下步骤：
S01、在OLED器件上方制备图案化结构的阻挡层。
利用金属掩膜板在OLED器件上方形成图案化结构的阻挡层，金属掩膜板 按需求设计成具有相应图案的镂空区和非镂空区，用于形成阻挡层的材料通过镂空区，在OLED器件上方形成相应的图案化结构。该材料为无机物，可选的，该无机物为金属氧化物、金属氮化物和金属氮氧化物之中的一种或多种。
在一应用例中，金属掩膜板上的镂空区的图案是固定，可以根据需求多次水平移动、竖直移动或旋转该金属掩膜板，以得到更多不同的图案，形成不同的图案化结构的阻挡层。
S02、在阻挡层的图案化区域内填充缓冲层。
通过旋涂、喷墨印刷、喷嘴印刷或化学气相沉积等方法，将缓冲层填充在阻挡层的图案化区域内。用于制备缓冲层的材料是能够固化的有机聚合物，其中，固化包括热固化和紫外固化中至少一种。将缓冲层填充在阻挡层的图案化区域内，一方面能够通过填充的缓冲层释放阻挡层承受的弯曲应力，另一方面能够在制备过程中，防止用于形成缓存层的有机物墨滴的流溢。
在一应用例中，有机聚合物可以为树脂，该树脂的粘度为300至700毫帕秒，且需要在80至100摄氏度的环境下进行60至90分钟的固化。
重复步骤S01和步骤S02，即可在OLED器件上形成图2所示的具有若干层交替的阻挡层和缓冲层的OLED器件的封装结构。可以理解的是，根据需求确定重复步骤S01和步骤S02的次数，即可形成与该次数相应的层数的阻挡层和缓冲层。
可选的，在重复步骤S01以制备阻挡层时，离OLED器件越近的阻挡层的厚度越大；其中，最靠近OLED器件的阻挡层的厚度为0.1微米至10微米。每一层缓冲层的厚度与相应的阻挡层的厚度相同。由于阻挡层的厚度随着远离OLED器件而逐渐减小，相应的缓冲层的厚度也逐渐减小，因此，缓冲层所需的固化时间也可以相应的缩短。
在OLED器件上方完成封装结构的制备之后，将OLED器件及其封装结构从基板上完整的剥离，即形成了柔性OLED器件。可选的，可以采用激光剥离技术将OLED器件及其封装结构从基板上剥离。
参阅图8，图8是本发明OLED器件封装结构的制备方法第二实施例的流 程示意图。本实施例是在图7所示的制备方法第一实施例的基础上改进得到，本实施例在步骤S02之后，还包括如下步骤：
S03、在交替的阻挡层和缓冲层上形成整面覆盖该阻挡层和缓冲层的最上层缓冲层。
通过步骤S01和步骤S02，形成了交替的阻挡层和缓冲层，重复步骤S01和步骤S02，即可形成若干层交替的阻挡层和缓冲层，此时，再在交替的阻挡层和缓冲层之上，再形成一层缓冲层，该缓冲层能够整面覆盖其下一层的阻挡层和缓冲层。如此，形成如图3所示的OLED器件的封装结构。
进一步的，参阅图9，图9是本发明OLED器件封装结构的制备方法第三实施例的流程示意图。本实施例是在图8所示的制备方法第二实施例的基础上改进得到，本实施例在步骤S03之后，还包括如下步骤：
S04、在最上层的缓冲层之上形成能够整面覆盖该缓冲层的阻挡层。
在最上层的缓冲层之上再形成一层阻挡层，能够增加该封装结构阻挡水氧的能力。如此，形成如图4所示的OLED器件的封装结构。
进一步的，参阅图10，图10是本发明OLED器件封装结构的制备方法第四实施例的流程示意图。本实施例是在图9所示的制备方法第三实施例的基础上改进得到，本实施例在步骤S01之前，还包括如下步骤：
S05、在OLED器件上方形成有机平坦层。
本实施例中，没有直接在OLED器件上形成交替的阻挡层和缓存层，而是现在OLED器件上形成一层有机平坦层，通过有机平坦层对OLED器件中最上层的阴极层中存在的缺陷进行覆盖和补偿。再在有机平坦层上形成交替的阻挡层和缓冲层。
根据本实施例的制备方法，形成的OLED器件封装结构请参照图4。
进一步的，本发明还提出了用于制备图2至图4以及图6所示的OLED器件的封装结构的金属掩膜板。参阅图11a-图11e，图11a-图11e是本发明金属掩膜板实施例的结构示意图。如图11a-图11e所示，本实施例的金属掩膜板包括非镂空区31和镂空区32；镂空区32离散的设置在非镂空区31内；镀膜材料从镂 空区32中通过，并被非镂空区31阻挡，以形成与非镂空区31和镂空区32对应的图案化的阻挡层。
本实施例中，镂空区的形状可以为多个长方形、多个椭圆形或多少多边形。其中，多个多边形由多个宽度不同的长方形交替连接形成。根据镂空区的形状不同，得到的阻挡层的图案化结构也不同。此外，在制备过程中还可以根据实际需求，通过水平平移或竖直平移该金属掩膜板，以得到更多形状的图案化结构；可以通过旋转金属掩膜板得到相互交错的图案化结构。
以上仅为本发明的实施例，并非因此限制本发明的专利保护范围，凡是利用本发明说明书及附图内容所作的等效结构或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围。

Claims (11)

  1. 一种OLED器件封装结构的制备方法，其中，包括：
    在OLED器件的上方形成若干层交替的阻挡层和缓冲层；其中，至少一层所述阻挡层通过掩膜板刻蚀形成图案化结构；将所述缓冲层填充在所述阻挡层的图案化区域内；
    制备若干层所述阻挡层时，上一层阻挡层覆盖下一层阻挡层的图案化区域；
    在交替的阻挡层和缓冲层上形成整面覆盖该阻挡层和缓冲层的最上层缓冲层。
  2. 根据权利要求1所述的制备方法，其中，在所述在交替的阻挡层和缓冲层上形成整面覆盖该阻挡层和缓冲层的最上层缓冲层之后，还包括：
    在所述最上层缓冲层之上形成能够整面覆盖所述最上层缓冲层的最上层阻挡层。
  3. 根据权利要求1所述的制备方法，其中，还包括：
    在所述OLED器件上方形成有机平坦层，所述若干层交替的阻挡层和缓冲层形成在所述有机平坦层上方。
  4. 一种OLED器件的封装结构，其中，包括：在OLED器件上方的若干层交替的阻挡层和缓冲层，至少一层所述阻挡层为图案化结构；所述缓冲层填充在所述阻挡层的图案化区域内。
  5. 根据权利要求4所述的封装结构，其中，若干层所述阻挡层中，上一层阻挡层覆盖下一层阻挡层的图案化区域。
  6. 根据权利要求4所述的封装结构，其中，若干层所述阻挡层中，除最上层的所述阻挡层外其余的所述阻挡层均为图案化结构；其中，所述最上层的所述阻挡层整面覆盖其下一层的所述阻挡层和缓冲层；或
    最上层的所述缓冲层整面覆盖其下一层的所述缓冲层和所述阻挡层，所述最上层的所述阻挡层整面覆盖所述最上层缓冲层。
  7. 根据权利要求4所述的封装结构，其中，若干层所述阻挡层中，越靠近 所述OLED器件，所述阻挡层的厚度越厚。
  8. 根据权利要求4所述的封装结构，其中，所述阻挡层为金属氧化物；所述缓冲层为有机聚合物、树脂或硅基碳氧化物。
  9. 根据权利要求4所述的封装结构，其中，所述阻挡层的图案化区域包括多个长方形、多个椭圆形或多个多边形，其中，所述多边形由多个宽度不同的长方形交替连接形成；
    所述多个长方形、椭圆形或多边形为平行或交错结构。
  10. 根据权利要求4所述的封装结构，其中，所述封装结构还包括有机平坦层，所述有机平坦层设置在若干层所述阻挡层中最下层的所述阻挡层和所述OLED器件之间。
  11. 一种金属掩膜板，其中，用于在OLED器件上方制备若干层交替的图案化结构的阻挡层，所述OLED器件的缓存层填充在所述阻挡层的图案化区域内；
    所述金属掩膜板包括非镂空区和镂空区；所述镂空区离散的设置在所述非镂空区内；镀膜材料从所述镂空区中通过，并被所述非镂空区阻挡，以形成与所述非镂空区和镂空区对应的图案化的所述阻挡层。
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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113233412A (zh) * 2021-05-10 2021-08-10 南京惠斯通智能科技有限责任公司 一种用于复杂微机械封装的硬掩膜板结构及其焊料键合方法

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107359281B (zh) * 2017-07-12 2019-04-02 武汉华星光电半导体显示技术有限公司 封装组件的制备方法、封装组件及显示装置
CN110692147A (zh) * 2017-12-13 2020-01-14 深圳市柔宇科技有限公司 用于真空蒸镀的掩膜板、蒸镀方法、显示装置及蒸镀设备
CN108198951A (zh) * 2017-12-29 2018-06-22 深圳市华星光电技术有限公司 一种柔性oled显示器件及其封装方法、网状隔垫层制备方法
CN108281388B (zh) * 2018-01-23 2021-02-26 京东方科技集团股份有限公司 阵列基板、其制作方法及显示面板
CN108461645A (zh) * 2018-02-09 2018-08-28 武汉华星光电半导体显示技术有限公司 一种用于柔性显示器件上的封装结构及制备方法
US10510986B2 (en) 2018-02-09 2019-12-17 Wuhan China Star Optoelectronics Semiconductor Display Technology Co., Ltd. Encapsulation structure for flexible display and manufacturing method thereof
CN108666439A (zh) * 2018-04-18 2018-10-16 武汉华星光电半导体显示技术有限公司 一种oled的封装结构及封装方法
CN109166824A (zh) * 2018-08-01 2019-01-08 云谷（固安）科技有限公司 柔性显示屏的薄膜封装结构、柔性显示屏及显示装置
CN109192876B (zh) * 2018-08-02 2021-01-26 广州国显科技有限公司 柔性显示屏的薄膜封装结构、柔性显示屏及显示装置
CN109461831B (zh) * 2018-08-31 2020-09-04 云谷（固安）科技有限公司 一种有机发光显示面板及其制备方法
CN109301066B (zh) * 2018-10-24 2022-08-12 武汉天马微电子有限公司 柔性基板、显示装置以及柔性基板的制造方法
CN109524565B (zh) * 2018-11-23 2021-01-26 京东方科技集团股份有限公司 一种可拉伸的有机发光显示装置及其制作方法
CN109686855A (zh) * 2018-12-04 2019-04-26 武汉华星光电半导体显示技术有限公司 一种薄膜封装结构及薄膜封装方法
CN109686862A (zh) 2019-01-10 2019-04-26 武汉华星光电半导体显示技术有限公司 显示面板
CN109873090B (zh) 2019-03-29 2021-10-29 合肥鑫晟光电科技有限公司 封装结构、显示基板、显示装置及显示器件的封装方法
CN110112292A (zh) * 2019-05-14 2019-08-09 武汉华星光电半导体显示技术有限公司 柔性显示屏及其制作方法、智能设备
CN110444116B (zh) 2019-07-16 2021-07-06 武汉华星光电半导体显示技术有限公司 柔性基板及其制备方法
CN111092169B (zh) * 2020-01-02 2022-10-18 云谷（固安）科技有限公司 显示面板及显示终端
CN118660473A (zh) * 2024-08-21 2024-09-17 江苏汇显显示技术有限公司 太阳能电池组件及其制备方法和太阳能电池

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103299447A (zh) * 2010-10-25 2013-09-11 荷兰应用自然科学研究组织Tno 光电器件和制造光电器件的方法
CN104576959A (zh) * 2013-10-15 2015-04-29 三星显示有限公司 柔性有机发光二极管显示器及其制造方法
CN105938873A (zh) * 2016-07-01 2016-09-14 武汉华星光电技术有限公司 一种柔性显示装置及其制造方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI501441B (zh) * 2012-08-24 2015-09-21 財團法人工業技術研究院 非連續複合阻障層、其形成方法及包含其之封裝結構
TWI492374B (zh) * 2012-12-03 2015-07-11 Au Optronics Corp 電激發光顯示面板
CN104733507B (zh) * 2015-04-09 2018-05-01 京东方科技集团股份有限公司 柔性显示装置和柔性显示装置的封装方法
US20160365538A1 (en) * 2015-06-15 2016-12-15 Shenzhen China Star Optoelectronics Technology Co., Ltd. Packaging structure of oled device and packaging method thereof
CN105679969B (zh) * 2016-03-17 2017-11-28 深圳市华星光电技术有限公司 Oled器件的封装方法与oled封装结构
CN105977394A (zh) * 2016-06-15 2016-09-28 信利（惠州）智能显示有限公司 一种柔性oled器件及其封装方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103299447A (zh) * 2010-10-25 2013-09-11 荷兰应用自然科学研究组织Tno 光电器件和制造光电器件的方法
CN104576959A (zh) * 2013-10-15 2015-04-29 三星显示有限公司 柔性有机发光二极管显示器及其制造方法
CN105938873A (zh) * 2016-07-01 2016-09-14 武汉华星光电技术有限公司 一种柔性显示装置及其制造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113233412A (zh) * 2021-05-10 2021-08-10 南京惠斯通智能科技有限责任公司 一种用于复杂微机械封装的硬掩膜板结构及其焊料键合方法

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