WO2018152889A1 - 一种柔性基板的制备方法 - Google Patents

一种柔性基板的制备方法 Download PDF

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WO2018152889A1
WO2018152889A1 PCT/CN2017/076599 CN2017076599W WO2018152889A1 WO 2018152889 A1 WO2018152889 A1 WO 2018152889A1 CN 2017076599 W CN2017076599 W CN 2017076599W WO 2018152889 A1 WO2018152889 A1 WO 2018152889A1
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flexible substrate
substrate
fixing material
glass substrate
edge
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French (fr)
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王选芸
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0212—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or coating of substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/411—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by materials, geometry or structure of the substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/11—Separation of active layers from substrates
    • H10P95/112—Separation of active layers from substrates leaving a reusable substrate, e.g. epitaxial lift off

Definitions

  • the invention belongs to the technical field of display, and in particular relates to a method for preparing a flexible substrate.
  • a flexible substrate is a substrate structure in which a device is fabricated on a surface of a substrate made of a flexible material.
  • flexible flexible devices made of flexible substrates are expected to become mainstream devices for next-generation optoelectronic devices.
  • Flexible devices such as displays, chips, circuits, power supplies, sensors, etc., can not only achieve the functions that traditional optoelectronic devices cannot achieve, but also have the advantage of low cost, and also help to improve the user experience.
  • the substrate materials currently used are mostly polyimide (PI) or polyethylene naphthalate (PEN), and the flexible substrate needs to be processed at a high temperature in the front-end process of the flexible AMOLED due to The difference in thermal expansion coefficient between the base material and the glass is large, and therefore, thermal stress is generated in a high temperature process.
  • the flexible substrate and the glass substrate are separated, and the flexible substrate releases thermal stress, thereby causing curling of the flexible substrate, and in the case of a thin film transistor on the flexible substrate.
  • the performance has a big impact.
  • One of the technical problems to be solved by the present invention is to propose a method for releasing film stress due to a difference in thermal expansion coefficient between a glass substrate and a flexible substrate.
  • the embodiment of the present application first provides a preparation method of a flexible substrate.
  • the method includes: forming a flexible substrate on a glass substrate; peeling the flexible substrate from the glass substrate; fixing an edge of the flexible substrate on the glass substrate; and completing a remaining substrate process on the flexible substrate Cutting the flexible substrate along a predetermined trajectory to obtain the flexible substrate; wherein the predetermined trajectory is located inside a region enclosed by the edge.
  • the fixing the edge of the flexible substrate on the glass substrate comprises: laying the flexible substrate on a surface of the glass substrate; coating and fixing at an edge of the flexible substrate And fixing the fixing material to a surface of the glass substrate; treating the fixing material to fix an edge of the flexible substrate on the glass substrate.
  • the fixing the edge of the flexible substrate on the glass substrate comprises: coating a fixing material on the glass substrate, the coating position of the fixing material corresponding to an edge of the flexible substrate Laying the flexible substrate onto a surface of the glass substrate such that the fixing material is completely covered by an edge of the flexible substrate; treating the fixing material to fix an edge of the flexible substrate On the glass substrate.
  • the fixing material does not volatilize at a temperature in the range of 450 ° C or above.
  • the fixing material is the same material as the flexible substrate.
  • the fixing material comprises polyimide or polyethylene naphthalate.
  • the fixing material is processed to fix an edge of the flexible substrate on the glass substrate, comprising: curing the fixing material at a high temperature in a temperature range of 200-400 ° C, the high temperature The duration of curing is 5-10 min.
  • the flexible substrate is peeled off from the glass substrate by laser laser.
  • the energy of the laser ranges from 300 to 500 mJ/cm 2 and the scanning overlap of the laser ranges from 20 to 60%.
  • the minimum distance between the predetermined trajectory and the edge is maintained at an offset of 5-10 mm.
  • the film stress generated in the flexible substrate film forming process is effectively released by first peeling the flexible substrate from the glass substrate and then fixing the edge of the flexible substrate to the glass substrate.
  • the resulting flexible substrate does not warp, improving the reliability of the flexible substrate and the corresponding flexible device.
  • FIG. 1 is a schematic flow chart of a method of fabricating a flexible substrate according to a first embodiment of the present invention
  • FIGS. 2a-2f are process flow diagrams of a method of fabricating a flexible substrate in accordance with a second embodiment of the present invention.
  • Figure 3 is a plan view of Figure 2f;
  • 4a-4f are process flow diagrams of a method of fabricating a flexible substrate in accordance with a third embodiment of the present invention.
  • Figure 5 is a plan view of Figure 4c.
  • a method for fabricating a flexible substrate according to a first embodiment of the present invention specifically includes the following steps:
  • Step S110 forming a flexible substrate on the glass substrate.
  • Step S120 separating the flexible substrate from the glass substrate.
  • Step S130 fixing the edge of the flexible substrate on the glass substrate.
  • Step S140 completing the remaining substrate process on the flexible substrate.
  • Step S150 cutting the flexible substrate along a predetermined trajectory to obtain a flexible substrate.
  • a flexible material is first coated on the surface of the hard glass substrate.
  • a substrate for preparing a flexible substrate may be a flexible material commonly used in the prior art, and may be, for example, polyimide PI or polyethylene naphthalate PEN.
  • the flexible material is coated and baked using a coating.
  • the process parameters can be set to cure the flexible material at a high temperature in the temperature range of 120-450 ° C, and the duration of the high temperature curing is 30-60 min, and the heating rate is maintained at 4-7 ° C / min.
  • the flexible substrate has a dry film thickness of 10-20 ⁇ m.
  • step S120 the flexible substrate and the glass substrate are completely lifted off.
  • the Lift-off process is a method of ablating a flexible substrate at a contact interface (atomic layer interface) between a glass substrate and a flexible substrate by means of a high energy density, so that the glass substrate and the flexible substrate are separated from each other.
  • the flexible substrate may be peeled off from the glass substrate by laser laser.
  • the energy of the laser is generally in the range of 300 to 500 mJ/cm 2
  • the scanning overlap of the laser is in the range of 20 to 60%.
  • step S130 it is noted that only the flexible substrate is fixed to the glass substrate at the edge, and the other portions on the flexible substrate for forming the metal layer and the insulating layer remain in a state of being separated from the glass substrate.
  • the remaining substrate process refers to a process step for forming a metal layer and an insulating layer on the flexible substrate except for the formation step of the flexible substrate.
  • the formation of a thin film transistor, the formation of a data line and a scanning line, and the formation of each insulating layer may be included. It is not limited in this embodiment, and can be implemented according to actual needs.
  • step S140 on the flexible substrate which is edge-fixed to the glass substrate, substantially all of the structures constituting the flexible substrate have been formed.
  • step S150 the predetermined trajectory is located inside the area enclosed by the fixed edge, and the minimum distance between the predetermined trajectory and the fixed edge should be maintained at an offset of 5-10 mm in order to eliminate the residue. Film stress.
  • the flexible substrate is fixed on the surface of the glass substrate in an edge-fixing manner. Since the flexible substrate is laid on the surface of the glass substrate by edge fixing, when the remaining substrate process is performed on the flexible substrate, Will not be affected by the coefficient of thermal expansion. Finally, after the process is completed, the flexible substrate with the edge fixed will be cut to obtain a stress-free flexible device.
  • the preparation method of the embodiment of the invention can effectively release the stress generated in the existing flexible substrate process due to the difference in thermal expansion coefficient between the flexible substrate and the glass substrate, thereby improving the stability of the flexible product.
  • a method of fixing an edge of a flexible substrate to a glass substrate comprising the steps of:
  • Step S1301 the flexible substrate is laid on the surface of the glass substrate.
  • Step S1302 applying a fixing material at an edge of the flexible substrate, and bringing the fixing material into contact with the surface of the glass substrate.
  • Step S1303 The fixing material is processed to fix the edge of the flexible substrate on the glass substrate.
  • Figures 2a-2f show a complete flexible substrate process, as shown in Figure 2a, showing the process of forming a flexible substrate on a glass substrate.
  • 1 is a glass substrate
  • 2 is a flexible substrate.
  • step S110 in the first embodiment.
  • a process for peeling the flexible substrate 2 from the glass substrate 1 is shown. It can be seen that when the flexible substrate 2 and the glass substrate 1 are peeled off by a laser laser method, it is necessary to irradiate the laser light from the side of the glass substrate 1 to the contact interface between the flexible substrate 2 and the glass substrate 1.
  • the flexible substrate 2 obtained after the peeling is directly laid on the surface of the glass substrate 1.
  • a fixing material 3 is applied at one edge of the flexible substrate 2, and the fixing material 3 is brought into contact with the surface of the glass substrate 1.
  • the fixing material 3 needs to be satisfactory to ensure that it is not volatile when heated to 450 ° C or heated to a temperature above 450 ° C. This is because, in the subsequent treatment, the fixing material 3 needs to be subjected to high temperature treatment, and if the fixing material has volatility, there is a possibility that the flexible substrate 2 is contaminated.
  • the same fixing material as that of the flexible substrate 2 may be selected.
  • the material of the flexible substrate 2 is polyimide PI or polyethylene naphthalate PEN
  • the corresponding fixing material may also be selected as PI or PEN.
  • the fixing material is treated as shown in Figure 2d. It is assumed that the same fixing material as the material of the flexible substrate 2, such as PI or PEN, is selected in Fig. 2c, and the coated PI and PEN are in solution.
  • the treatment of PI or PEN in step S1303 specifically includes high temperature curing of PI or PEN in a temperature range of 200-400 ° C, and the duration of high temperature curing is 5-10 min.
  • the fixing material 3 is the same as the material of the flexible substrate 2, it is expressed as flexible in Fig. 2d.
  • the substrate 2 and the fixing material 3 form an integral structure.
  • step S140 the remaining substrate process is completed on the flexible substrate 2, with specific reference to step S140 in the first embodiment.
  • the flexible substrate 2 is cut along a predetermined trajectory as shown in Fig. 2f.
  • the dashed line in Figure 2f is used to indicate the position of the cutting line.
  • the rectangular dotted frame in FIG. 3 indicates the size of the flexible substrate required, and when the rectangular dotted frame is cut, the rectangular dotted frame is indicated by D in FIG.
  • the minimum distance between the fixed edges between the substrate 2 and the glass substrate 1 is such that the film thickness is not left in the flexible substrate after cutting, and the value of D should be maintained at 5-10 mm.
  • the method for fixing the edge of the flexible substrate on the glass substrate in the embodiment of the present invention only needs to add a coating fixing material and a step of processing the fixing material in the process of the original flexible substrate (it is necessary to pay attention to the flexibility)
  • the step of peeling off the substrate from the glass substrate belongs to changing the original process sequence, but does not actually add a new process step), and therefore, does not significantly increase the operation of the existing process, is easy to implement, and does not significantly increase production. cost.
  • Step S1310 applying a fixing material on the glass substrate, the coating position of the fixing material corresponding to the edge of the flexible substrate.
  • Step S1320 the flexible substrate is laid on the surface of the glass substrate such that the fixing material is completely covered by the edge of the flexible substrate.
  • Step S1330 the fixing material is processed to fix the edge of the flexible substrate on the glass substrate.
  • the flexible substrate 2 is peeled off from the glass substrate 1
  • the flexible substrate 2 is removed from the surface of the glass substrate 1.
  • the fixing material 3 is coated on the surface of the glass substrate 1, and the coating position of the fixing material 3 corresponds to the edge of the flexible substrate 2.
  • the fixing material 3 surrounds the edge of the flexible substrate 2. Corresponding rectangular regions are made such that the rectangular regions are slightly smaller than the edges of the flexible substrate 2.
  • the flexible substrate 2 is re-tilted on the surface of the glass substrate 1. Capacity It is easily understood that a large part of the flexible substrate 2 falls within a rectangular area surrounded by the fixing material 3 while the flexible substrate 2 completely covers the fixing material 3.
  • the flexible substrate and the glass substrate are fixed to each other in an edge-fixed manner, so that they are not affected by the thermal expansion coefficient during the process, which is beneficial to improving the stability of the flexible device.
  • the method for preparing the flexible substrate in this embodiment can be widely applied to a process such as a flexible AMOLED.

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Abstract

一种柔性基板的制备方法，包括：在玻璃基板上形成柔性基底（S110）；将所述柔性基底与所述玻璃基板相剥离（S120）；将所述柔性基底的边缘固定在所述玻璃基板上（S130）。该方法能够有效地释放掉柔性基底成膜制程中所产生的薄膜应力，使得制成的柔性基板不会产生翘曲，增强了柔性基板以及相应的柔性器件的可靠性。

Description

一种柔性基板的制备方法
相关申请的交叉引用
本申请要求享有2017年02月22日提交的名称为“一种柔性基板的制备方法”的中国专利申请CN201710098365.6的优先权，该申请的全部内容通过引用并入本文中。
技术领域
本发明属于显示技术领域，尤其涉及一种柔性基板的制备方法。
背景技术
所谓柔性基板，是一种在柔性材料构成的基底表面上制备器件的基板结构。随着显示技术的不断更新与发展，采用柔性基板制成的可弯曲的柔性器件有望成为下一代光电子器件的主流设备。如显示器、芯片、电路、电源、传感器等柔性器件，它们不仅能够实现传统光电子器件所不能实现的功能，同时具有低成本的优势，还有利于改善用户体验。
现有柔性基板存在应力不易释放的问题。例如常用的柔性AMOLED器件，目前使用的基底材料多为聚酰亚胺(PI)或者聚萘二甲酸乙二醇酯(PEN)，在柔性AMOLED的前段制程中需要对柔性基底进行高温处理，由于基底材料与玻璃之间的热膨胀系数差异较大，因此，在高温制程中会产生热应力。当完成柔性基板的全部板上的工艺制程后，需要将柔性基板与玻璃基板相剥离，柔性基板会释放热应力，进而造成柔性基板的卷曲，严重时还会对柔性基板上的薄膜晶体管等器件的性能造成较大影响。
因此，亟需提出一种方法，以释放玻璃基板与柔性基底之间由于热膨胀系数差异所导致的薄膜应力，提高柔性基板的抗弯折性能。
发明内容
本发明所要解决的技术问题之一是提出一种方法以释放玻璃基板与柔性基底之间由于热膨胀系数差异所导致的薄膜应力。
为了解决上述技术问题，本申请的实施例首先提供了一种柔性基板的制备方 法，包括：在玻璃基板上形成柔性基底；将所述柔性基底与所述玻璃基板相剥离；将所述柔性基底的边缘固定在所述玻璃基板上；在所述柔性基底上完成剩余基板制程；沿预定轨迹对所述柔性基底进行切割，以获得所述柔性基板；其中，所述预定轨迹位于由所述边缘围成的区域的内部。
优选地，所述将所述柔性基底的边缘固定在所述玻璃基板上，具体包括：将所述柔性基底平铺于所述玻璃基板的表面上；在所述柔性基底的边缘处涂覆固定材料，并使所述固定材料与所述玻璃基板的表面接触；对所述固定材料进行处理，以使所述柔性基底的边缘固定在所述玻璃基板上。
优选地，所述将所述柔性基底的边缘固定在所述玻璃基板上，具体包括：在所述玻璃基板上涂覆固定材料，所述固定材料的涂覆位置对应于所述柔性基底的边缘；将所述柔性基底平铺于所述玻璃基板的表面上，使所述固定材料完全被所述柔性基底的边缘覆盖；对所述固定材料进行处理，以使所述柔性基底的边缘固定在所述玻璃基板上。
优选地，所述固定材料在450℃或在450℃以上的温度范围内不挥发。
优选地，所述固定材料与所述柔性基底的材料相同。
优选地，所述固定材料包括聚酰亚胺或聚萘二甲酸乙二醇酯。
优选地，对所述固定材料进行处理，以使所述柔性基底的边缘固定在所述玻璃基板上，包括：在200-400℃的温度范围内对所述固定材料进行高温固化，所述高温固化的持续时间为5-10min。
优选地，采用激光镭射法将所述柔性基底与所述玻璃基板相剥离。
优选地，所述激光的能量范围为300-500mJ/cm2，激光的扫描重叠范围为20-60％。
优选地，所述预定轨迹与所述边缘之间的最小距离保持5-10mm的偏移。
与现有技术相比，上述方案中的一个或多个实施例可以具有如下优点或有益效果：
在柔性基板的工艺制程中，通过先将柔性基底与玻璃基板相剥离，再使柔性基底的边缘与玻璃基板相固定的方式，有效地释放掉柔性基底成膜制程中所产生的薄膜应力，使得制成的柔性基板不会产生翘曲，提高了柔性基板以及相应的柔性器件的可靠性。
本发明的其他优点、目标，和特征在某种程度上将在随后的说明书中进行阐述，并且在某种程度上，基于对下文的考察研究对本领域技术人员而言将是 显而易见的，或者可以从本发明的实践中得到教导。本发明的目标和其他优点可以通过下面的说明书，权利要求书，以及附图中所特别指出的结构来实现和获得。
附图说明
附图用来提供对本申请的技术方案或现有技术的进一步理解，并且构成说明书的一部分。其中，表达本申请实施例的附图与本申请的实施例一起用于解释本申请的技术方案，但并不构成对本申请技术方案的限制。
图1为根据本发明第一实施例的柔性基板的制备方法的流程示意图；
图2a-图2f为根据本发明第二实施例的柔性基板的制备方法的的工艺流程图；
图3为图2f的俯视图；
图4a-图4f为根据本发明第三实施例的柔性基板的制备方法的的工艺流程图；
图5为图4c的俯视图。
具体实施方式
以下将结合附图及实施例来详细说明本发明的实施方式，借此对本发明如何应用技术手段来解决技术问题，并达成相应技术效果的实现过程能充分理解并据以实施。本申请实施例以及实施例中的各个特征，在不相冲突前提下可以相互结合，所形成的技术方案均在本发明的保护范围之内。
第一实施例：
如图1所示，根据本发明第一实施例的柔性基板的制备方法具体包括以下步骤：
步骤S110、在玻璃基板上形成柔性基底。
步骤S120、将柔性基底与玻璃基板相剥离。
步骤S130、将柔性基底的边缘固定在玻璃基板上。
步骤S140、在柔性基底上完成剩余基板制程。
步骤S150、沿预定轨迹对柔性基底进行切割，以获得柔性基板。
具体的，在步骤S110中，在硬质的玻璃基板的表面上先涂覆一层柔性材料， 用于制备柔性基板的基底。所采用的柔性材料可以为现有技术中常用的柔性材料，例如可以为聚酰亚胺PI或聚萘二甲酸乙二醇酯PEN。
在本发明一个具体的实施例中，采用coating的方式对柔性材料进行涂布和烘烤。制程工艺参数可以设置为，在120-450℃的温度范围内对柔性材料进行高温固化，且高温固化的持续时间为30-60min，升温速度维持在4-7℃/min。形成的柔性基底干膜厚度为10-20μm。
在步骤S120中，将柔性基底与玻璃基板完全剥离(lift-off)。
Lift-off工艺制程是采用具有高能量密度的手段对玻璃基板与柔性基底的接触界面处(原子层界面)的柔性基底进行烧蚀，致使玻璃基板与柔性基底相互分离。
在本实施例中，具体可以采用激光镭射法将柔性基底与玻璃基板相剥离。在对柔性基底与玻璃基板进行剥离时，激光的能量范围一般为300-500mJ/cm2，激光的扫描重叠范围为20-60％。
在步骤S130中，需要注意的是，仅使柔性基底在边缘处与玻璃基板相固定，而柔性基底上其他用于形成金属层和绝缘层的部分仍然保持与玻璃基板相互分离的状态。
在步骤S140中，所说剩余基板制程指的是除柔性基底的形成步骤以外的其余用于在柔性基底上形成金属层和绝缘层的工艺步骤。例如可以包括薄膜晶体管的形成、数据线以及扫描线的形成以及各绝缘层的形成等作业。本实施例中对其不做限定，可以根据实际需要进行实施。
在完成步骤S140后，在与玻璃基板进行边缘固定的柔性基底上，实际上已经形成了构成柔性基板的全部结构。
在步骤S150中，所说预定轨迹位于上述固定的边缘围成的区域的内部，且应保证该预定轨迹与上述固定的边缘之间的最小距离维持5-10mm的偏移量，以便于消除残留的薄膜应力。
在本发明实施例中，将柔性基底以边缘固定的方式固定在玻璃基板的表面上，由于柔性基底是通过边缘固定的方式平铺于玻璃基板表面，因此在柔性基底上实施剩余基板制程时，不会受到热膨胀系数的影响。最后在制程完成后，将以边缘固定的柔性基底进行切割，可以得到无应力的柔性器件。
本发明实施例的制备方法能够有效释放现有柔性基板制程中，由于柔性基底与玻璃基板之间的热膨胀系数的差异而产生的应力，提高柔性产品的稳定性。
第二实施例：
在本实施例中，进一步提供了一种将柔性基底的边缘固定在玻璃基板上的方法，包括以下步骤：
步骤S1301、将柔性基底平铺于玻璃基板的表面上。
步骤S1302、在柔性基底的边缘处涂覆固定材料，并使固定材料与玻璃基板的表面接触。
步骤S1303、对固定材料进行处理，以使柔性基底的边缘固定在玻璃基板上。
下面结合图2a-图2f对上述各方法步骤进行详细说明。
图2a-图2f给出了完整的柔性基板制程，如图2a所示，表示的是在玻璃基板上形成柔性基底的工艺制程。图中1表示的是玻璃基板，2表示的是柔性基底，形成柔性基底2的具体实施方式可以参考第一实施例中的步骤S110。
如图2b所示，表示的是将柔性基底2与玻璃基板1相剥离的工艺制程。可以看出，在采用激光镭射法对柔性基底2与玻璃基板1进行剥离时，需要使激光从玻璃基板1的一侧照射柔性基底2与玻璃基板1的接触界面。
剥离后得到的柔性基底2直接平铺在玻璃基板1的表面上。
如图2c所示，在柔性基底2的边缘处涂覆一周固定材料3，并使固定材料3与玻璃基板1的表面接触。
在一个具体的实施例中，固定材料3需要满足在被加热到450℃，或被加热到450℃以上的温度时，仍能保证不具有挥发性。这是因为，在后续处理中，需要对固定材料3进行高温处理，如果固定材料具有挥发性，则有可能对柔性基底2造成污染。
在另一个具体的实施例中，为了避免固定材料3对柔性基底2产生污染，还可以选择与柔性基底2的材料相同的固定材料。例如，当柔性基底2的材料为聚酰亚胺PI或聚萘二甲酸乙二醇酯PEN时，对应的固定材料也可以选择为PI或PEN。
如图2d所示，对固定材料进行处理。假设在图2c中选取了与柔性基底2的材料相同的固定材料，例如PI或PEN，涂覆的PI和PEN为溶液状。在步骤S1303中的对PI或PEN的处理具体包括，在200-400℃的温度范围内对PI或PEN进行高温固化，高温固化的持续时间为5-10min。
由于固定材料3与柔性基底2的材料相同，因此，在图2d中，表示为柔性 基底2与固定材料3形成一一体式的结构。
接下来，如图2e所示，在柔性基底2上完成剩余基板制程，具体参见第一实施例中的步骤S140。
在完成剩余基板制程后，沿预定轨迹对柔性基底2进行切割，如图2f所示。图2f中的虚线用于表示切割线的位置。结合图3所示的俯视图，图3中的矩形虚线框表示的是需要的柔性基板的尺寸，沿该矩形虚线框进行切割时，在图3中D所标示的是该矩形虚线框，与柔性基底2和玻璃基板1之间的固定边缘之间的最小距离，为保证切割后的柔性基板不残留有薄膜应力，应使D的值维持为5-10mm。
本发明实施例中的将柔性基底的边缘固定在玻璃基板上的方法，仅需要在原有柔性基板的工艺制程中加入涂覆固定材料以及对固定材料进行处理的步骤(需要注意的是，将柔性基底与玻璃基板相剥离的步骤属于改变了原制程顺序，但实际上并未增加新的工艺步骤)，因此，并未显著增加现有工艺制程的操作，易于实施，且不会显著增加生产的成本。
第三实施例：
在本实施例中，提供了另一种将柔性基底的边缘固定在玻璃基板上的方法，包括以下步骤：
步骤S1310、在玻璃基板上涂覆固定材料，固定材料的涂覆位置对应于柔性基底的边缘。
步骤S1320、将柔性基底平铺于玻璃基板的表面上，使固定材料完全被柔性基底的边缘覆盖。
步骤S1330、对固定材料进行处理，以使柔性基底的边缘固定在玻璃基板上。
下面结合图4a-图4f对上述步骤进行说明，其中，图4a、图4b、图4e和图4f可以参见第二实施例中的图2a、图2b、图2e和图2f。
如图4c所示，在将柔性基底2与玻璃基板1相剥离后，使柔性基底2从玻璃基板1的表面移开。在玻璃基板1的表面上涂覆固定材料3，固定材料3的涂覆位置对应于柔性基底2的边缘，可以参看图5所示的俯视图，固定材料3围成一个与柔性基底2的边缘相对应的矩形区域，且使该矩形区域略小于柔性基底2的边缘。
接下来，如图4d所示，将柔性基底2重新平铺在玻璃基板1的表面上。容 易理解的是，使柔性基底2的大部分落在固定材料3所围成的矩形区域内，同时使柔性基底2完全覆盖固定材料3。
在该实施例中，优选采用与柔性基底2材料相同的固定材料，以避免不同材料之间的交叉扩散产生污染。
本发明实施例中，以边缘固定的方式平将柔性基底与玻璃基板相互固定，因此在制程过程中不会受到热膨胀系数的影响，有利于提高柔性器件的稳定性。
本实施例中的柔性基板的制备方法可以广泛应用于如柔性AMOLED的工艺制程中。
虽然本发明所揭露的实施方式如上，但所述的内容只是为了便于理解本发明而采用的实施方式，并非用以限定本发明。任何本发明所属技术领域内的技术人员，在不脱离本发明所揭露的精神和范围的前提下，可以在实施的形式上及细节上作任何的修改与变化，但本发明的专利保护范围，仍须以所附的权利要求书所界定的范围为准。

Claims (14)

  1. 一种柔性基板的制备方法，包括：
    在玻璃基板上形成柔性基底；
    将所述柔性基底与所述玻璃基板相剥离；
    将所述柔性基底的边缘固定在所述玻璃基板上；
    在所述柔性基底上完成剩余基板制程；
    沿预定轨迹对所述柔性基底进行切割，以获得所述柔性基板；
    其中，所述预定轨迹位于由所述边缘围成的区域的内部。
  2. 根据权利要求1所述的制备方法，其中，所述将所述柔性基底的边缘固定在所述玻璃基板上，具体包括：
    将所述柔性基底平铺于所述玻璃基板的表面上；
    在所述柔性基底的边缘处涂覆固定材料，并使所述固定材料与所述玻璃基板的表面接触；
    对所述固定材料进行处理，以使所述柔性基底的边缘固定在所述玻璃基板上。
  3. 根据权利要求2所述的制备方法，其中，所述固定材料在450℃或在450℃以上的温度范围内不挥发。
  4. 根据权利要求2所述的制备方法，其中，所述固定材料与所述柔性基底的材料相同。
  5. 根据权利要求2所述的制备方法，其中，所述固定材料包括聚酰亚胺或聚萘二甲酸乙二醇酯。
  6. 根据权利要求5所述的制备方法，其中，对所述固定材料进行处理，以使所述柔性基底的边缘固定在所述玻璃基板上，包括：
    在200-400℃的温度范围内对所述固定材料进行高温固化，所述高温固化的持续时间为5-10min。
  7. 根据权利要求1所述的制备方法，其中，所述将所述柔性基底的边缘固定在所述玻璃基板上，具体包括：
    在所述玻璃基板上涂覆固定材料，所述固定材料的涂覆位置对应于所述柔性基底的边缘；
    将所述柔性基底平铺于所述玻璃基板的表面上，使所述固定材料完全被所述柔性基底的边缘覆盖；
    对所述固定材料进行处理，以使所述柔性基底的边缘固定在所述玻璃基板上。
  8. 根据权利要求7所述的制备方法，其中，所述固定材料在450℃或在450℃以上的温度范围内不挥发。
  9. 根据权利要求7所述的制备方法，其中，所述固定材料与所述柔性基底的材料相同。
  10. 根据权利要求7所述的制备方法，其中，所述固定材料包括聚酰亚胺或聚萘二甲酸乙二醇酯。
  11. 根据权利要求10所述的制备方法，其中，对所述固定材料进行处理，以使所述柔性基底的边缘固定在所述玻璃基板上，包括：
    在200-400℃的温度范围内对所述固定材料进行高温固化，所述高温固化的持续时间为5-10min。
  12. 根据权利要求1所述的制备方法，其中，采用激光镭射法将所述柔性基底与所述玻璃基板相剥离。
  13. 根据权利要求12所述的制备方法，其中，所述激光的能量范围为300-500mJ/cm2，激光的扫描重叠范围为20-60％。
  14. 根据权利要求1所述的制备方法，其中，所述预定轨迹与所述边缘之间的最小距离保持5-10mm的偏移。
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