WO2018149103A1 - 有机发光二极管器件、其制造方法及显示装置 - Google Patents

有机发光二极管器件、其制造方法及显示装置 Download PDF

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Publication number
WO2018149103A1
WO2018149103A1 PCT/CN2017/097523 CN2017097523W WO2018149103A1 WO 2018149103 A1 WO2018149103 A1 WO 2018149103A1 CN 2017097523 W CN2017097523 W CN 2017097523W WO 2018149103 A1 WO2018149103 A1 WO 2018149103A1
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Prior art keywords
light emitting
layer
emitting diode
organic light
ultraviolet
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PCT/CN2017/097523
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English (en)
French (fr)
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文官印
陈磊
吴海东
李娜
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京东方科技集团股份有限公司
鄂尔多斯市源盛光电有限责任公司
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Priority to EP17835993.1A priority Critical patent/EP3584851A4/en
Priority to US15/751,703 priority patent/US10930893B2/en
Publication of WO2018149103A1 publication Critical patent/WO2018149103A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/86—Arrangements for improving contrast, e.g. preventing reflection of ambient light
    • H10K50/865—Arrangements for improving contrast, e.g. preventing reflection of ambient light comprising light absorbing layers, e.g. light-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3026—Top emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/302—Details of OLEDs of OLED structures
    • H10K2102/3023—Direction of light emission
    • H10K2102/3035—Edge emission
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/831—Aging

Definitions

  • Embodiments of the present invention relate to an organic light emitting diode device, a method of fabricating the same, and a display device.
  • the organic light emitting diode device includes a substrate, an organic light emitting diode layer, a cover layer, and an encapsulation layer, which are sequentially disposed on the substrate. Since the sunlight contains a large amount of ultraviolet rays, the ultraviolet rays in the sunlight cause the organic light-emitting material in the organic light-emitting diode to undergo a redox reaction to cause deterioration, thereby greatly shortening the life of the organic light-emitting diode device.
  • the first to fourth embodiments of the present disclosure provide an organic light emitting diode device including: a substrate; an organic light emitting diode layer disposed on one side of the substrate; and a barrier layer configured to block ultraviolet light from entering the organic light emitting diode Floor;
  • the barrier layer is located on a light exiting side of the organic light emitting diode layer.
  • the organic light emitting diode device is a top light emitting structure, and the light emitting side is located on a side of the organic light emitting diode layer away from the substrate.
  • the organic light emitting diode device is a bottom light emitting structure, and the light emitting side is located on a side of the organic light emitting diode layer adjacent to the substrate.
  • the barrier layer is an organic material layer or an inorganic material layer.
  • the barrier layer comprises an ultraviolet absorber and/or an ultraviolet reflector.
  • the barrier layer is at least one of a cover layer, a light extraction layer, and an encapsulation layer for covering the electrodes.
  • the ultraviolet absorber includes one or a combination of the following: salicylates, benzophenones, benzotriazoles, substituted acrylonitriles, triazines, and hindered amines.
  • the ultraviolet reflective agent includes one or a combination of the following: titanium dioxide, zinc oxide, talc, clay, calcium carbonate.
  • a fifth embodiment of the present invention provides a display device, the display device comprising the above Organic light emitting diode display device.
  • An embodiment of the present disclosure provides a method of fabricating an organic light emitting diode device, comprising: forming an organic light emitting diode layer on one side of a substrate; and forming a barrier layer on a light emitting side of the organic light emitting diode layer.
  • the barrier layer is formed on the substrate before forming the organic light emitting diode layer, and then the machine light emitting diode layer is formed on the barrier layer, and the light emitting side is located near the organic light emitting diode layer One side of the substrate.
  • forming a barrier layer on the light exit side of the organic light emitting diode layer includes forming the barrier layer on a side of the organic light emitting diode layer away from the substrate.
  • forming a barrier layer on the light emitting side of the organic light emitting diode layer includes:
  • a layer of material comprising an ultraviolet absorber and/or an ultraviolet reflector is formed.
  • the barrier layer is a layer structure capable of absorbing and/or reflecting ultraviolet rays, and the manufacturing method thereof comprises forming the ultraviolet absorbing agent into the layer structure capable of absorbing ultraviolet rays.
  • forming a barrier layer on the light emitting side of the organic light emitting diode layer includes:
  • the barrier layer is formed by mixing an ultraviolet absorber and/or an ultraviolet reflector with an organic material.
  • mixing the ultraviolet absorber and/or the ultraviolet reflective agent and the organic material includes: reflecting at least one of a cover layer material, a light extraction layer material, and an encapsulation layer material for covering the electrode with an ultraviolet absorber and/or ultraviolet rays.
  • the agents are mixed to form the barrier layer.
  • forming a barrier layer on the light-emitting side of the organic light-emitting diode layer includes mixing an ultraviolet absorber and/or an ultraviolet light-reflecting agent and an inorganic material to form the barrier layer.
  • mixing the ultraviolet absorber and/or the ultraviolet reflective agent and the inorganic material includes: mixing and mixing at least one of a cover layer, a light extraction layer, and an encapsulation layer for covering the electrode with an ultraviolet absorber and/or an ultraviolet light reflector Forming the barrier layer.
  • FIG. 1 is a schematic view of an organic light emitting diode device according to a first embodiment of the present invention
  • FIG. 2 is a schematic view of an organic light emitting diode device according to a second embodiment of the present invention.
  • FIG. 3 is a schematic view of an organic light emitting diode device according to a third embodiment of the present invention.
  • FIG. 4 is a schematic view of an organic light emitting diode device according to a fourth embodiment of the present invention.
  • Fig. 5 is a view showing the configuration of a display device according to a fifth embodiment of the present invention.
  • organic light emitting diode device 100 substrate, 200 organic light emitting diode layer, 300 cover layer, 400 package layer, 510 barrier layer, 20 display device, 201 display panel, 202 backlight module.
  • the organic light emitting diode device of the embodiment of the present invention includes: a substrate 100 , an organic light emitting diode layer 200 disposed on one side of the substrate, and the The barrier layer 510 on the light-emitting side of the organic light-emitting diode layer.
  • the organic light emitting diode layer 200 has an organic light emitting diode, which can be used for lithography that emits a desired color, such as red, green, blue, or white light.
  • the barrier layer is configured to block ultraviolet light from entering.
  • the organic light emitting diode layer is configured to block ultraviolet light from entering.
  • the organic light emitting diode device may be a top light emitting structure, wherein the light emitting side is located on a side of the organic light emitting diode layer away from the substrate, and the blocking layer is also located away from the organic light emitting diode layer. One side of the substrate.
  • the organic light emitting diode device may be a bottom light emitting structure, wherein the light emitting side is located on a side of the organic light emitting diode layer adjacent to the substrate, and the blocking layer is also located adjacent to the organic light emitting diode layer. One side of the substrate.
  • the organic light emitting diode device of this embodiment includes a substrate, an organic light emitting diode layer disposed on one side of the substrate, and a barrier layer disposed on a light emitting side of the organic light emitting diode layer.
  • the ultraviolet light in the sunlight is shielded by the barrier layer, which greatly reduces the ultraviolet light to the organic light-emitting material in the organic light-emitting diode.
  • the influence of the material greatly reduces the influence of ultraviolet light on the organic light emitting diode device and prolongs the life of the organic light emitting diode device.
  • the manufacturing method of the organic light emitting diode device of the present embodiment includes the steps of: forming an organic light emitting diode layer on one side of the substrate; and forming a barrier layer on the light emitting side of the organic light emitting diode layer.
  • the barrier layer is configured to block ultraviolet light from entering the organic light emitting diode layer.
  • the organic light emitting diode layer has an organic light emitting diode.
  • the barrier layer is formed on the substrate before forming the organic light emitting diode layer, and then the machine light emitting diode layer is formed on the barrier layer, and the light emitting side is located near the organic light emitting diode layer One side of the substrate.
  • forming a barrier layer on the light exit side of the organic light emitting diode layer includes forming the barrier layer on a side of the organic light emitting diode layer away from the substrate.
  • the organic light emitting diode device with the barrier layer can be conveniently manufactured, and the manufacturing method is simple and easy to implement.
  • the material to be formed needs to include an ultraviolet shielding agent.
  • Ultraviolet shielding agent refers to a substance that can reflect or absorb ultraviolet light. It can shield ultraviolet light waves and reduce the transmission of ultraviolet light.
  • the ultraviolet shielding agent includes two types, one is an organic ultraviolet shielding agent, that is, an ultraviolet absorbent, and the other is an inorganic ultraviolet shielding agent, that is, an ultraviolet reflective agent.
  • the ultraviolet absorber refers to an organic compound capable of absorbing ultraviolet rays having a wavelength of 270-400 nm, and includes one or a combination of the following: salicylates, benzophenones, benzotriazoles, substituted acrylonitriles, triazines.
  • the mechanism of action of the ultraviolet reflector is mainly to reflect ultraviolet rays.
  • the ultraviolet reflectors are mostly metal oxides or ceramic powders, for example, including one or a combination of the following: titanium dioxide, zinc oxide, talc, clay, calcium carbonate, etc. They all have a high refractive index, which increases the reflection and scattering of ultraviolet light.
  • the structure of the barrier layer may be, for example, a UV-absorbing layer structure formed of an ultraviolet absorber separately provided, wherein the ultraviolet absorbing layer formed by the ultraviolet absorber is absorbed by an organic ultraviolet shielding agent, that is, ultraviolet light.
  • the UV-absorbing layer structure formed by the UV absorber is separately shielded by ultraviolet rays, which greatly reduces the UV-to-organic
  • the influence of the organic light-emitting material in the light-emitting diode greatly reduces the influence of the ultraviolet light on the organic light-emitting diode device and prolongs the life of the organic light-emitting diode device.
  • the ultraviolet absorbing layer structure formed of the ultraviolet absorbing agent separately provided includes the ultraviolet absorbing agent alone forming the layer structure capable of absorbing ultraviolet rays.
  • the manufacturing step of forming the ultraviolet absorbing layer layer by the ultraviolet absorbing agent alone does not affect other steps of the OLED device manufacturing method, and the manufacturing method is simple and easy to implement.
  • the structure of the barrier layer may be a layer structure capable of absorbing ultraviolet rays formed of an ultraviolet absorber and an organic material, or may be an ultraviolet absorber and an inorganic material capable of absorbing ultraviolet rays.
  • Layer structure The ultraviolet absorbing layer structure formed by the ultraviolet absorbing agent and the organic material has the function of absorbing ultraviolet rays on the one hand, and the organic layer formed by the organic material on the other hand, and the two layers simultaneously realize two functions, organic luminescence
  • the structure of the diode device is relatively simple.
  • the layer structure capable of absorbing ultraviolet rays formed by the ultraviolet absorber and the inorganic material has the function of absorbing ultraviolet rays on the one hand, and the inorganic layer formed by the inorganic material on the other hand, and simultaneously realizes two functions in one layer structure.
  • the structure of the organic light emitting diode device is relatively simple.
  • a method for producing a layer structure capable of absorbing ultraviolet rays formed of an ultraviolet absorber and an organic material includes mixing an ultraviolet absorber and an organic material to form the layer structure capable of absorbing ultraviolet rays.
  • an organic light emitting diode device there may be a manufacturing step of forming various organic layer structures, and an ultraviolet absorber and an organic material are mixed in forming an organic layer structure to form the layer structure capable of absorbing ultraviolet rays, organic
  • the steps of the method of fabricating the LED device are less increased, relatively simple, and easy to implement.
  • a method for producing a layer structure capable of absorbing ultraviolet rays formed of an ultraviolet absorber and an inorganic material includes mixing an ultraviolet absorber and an inorganic material to form the layer structure capable of absorbing ultraviolet rays.
  • an organic light emitting diode device there is a manufacturing step of forming various inorganic layer structures, and an ultraviolet absorber and an inorganic material are mixed in forming an inorganic layer structure to form the layer structure capable of absorbing ultraviolet rays, organic
  • the steps of the method of fabricating the LED device are less increased, relatively simple, and easy to implement.
  • a UV-blocking layer formed of an ultraviolet light reflecting agent alone or a UV-reflecting barrier layer formed of an ultraviolet reflecting agent and an organic material or an inorganic material may be formed. I won't go into details here.
  • the first to third embodiments of the present invention will be described in detail with the organic light emitting diode device as a top light emitting structure.
  • the specific structure of the ultraviolet absorbing barrier layer formed of the ultraviolet absorbing agent and the organic material may be at least one of a cover layer for covering the electrode, a light extraction layer, and an encapsulation layer.
  • FIG. 1 is a schematic view of an organic light emitting diode device 10 according to a first embodiment of the present invention
  • the barrier layer 510 is an ultraviolet absorbing cover layer formed of an ultraviolet absorber and a material for forming a cover layer.
  • One of the functions of the ultraviolet absorbing covering layer is to have the function of covering the electrode, and the second function is to have the function of shielding ultraviolet rays;
  • the organic light emitting diode device shown in FIG. 1 further includes a coating layer formed in the ultraviolet absorbing layer.
  • the encapsulation layer 400 on one side of the substrate.
  • the material for forming the cover layer may be an organic material for forming a cover layer, and an inorganic material for forming a cover layer may also be employed.
  • the organic material or the inorganic material in the layer structure capable of absorbing ultraviolet rays formed by the ultraviolet absorber and the organic material or the ultraviolet absorber and the inorganic material is not limited to the material for forming the cover layer, and may be organic light emission.
  • a material for forming another layer structure on the light-emitting side of the organic light-emitting diode layer in the diode device such as an organic material or an inorganic material for forming a light extraction layer, or a functional layer for forming a cover electrode and a light extraction function.
  • Organic or inorganic materials are examples of organic materials.
  • the barrier layer may also be an ultraviolet absorbing encapsulating layer formed of an ultraviolet absorber and a material for forming an encapsulation layer.
  • the encapsulation layer may be a single layer layer structure or a laminated multi-layer layer structure, as long as the layer structure in the encapsulation layer is composed of an ultraviolet absorber and a material for forming the layer structure. It can be formed.
  • FIG. 2 is a schematic view of an organic light emitting diode device 10 according to a second embodiment of the present invention.
  • the encapsulation layer includes a stacked three-layer structure, and the barrier layer 510 is an intermediate layer composed of an ultraviolet absorber and a polymer.
  • the ink-ink-printing layer structure capable of absorbing ultraviolet rays that is, the package layer structure capable of absorbing ultraviolet rays has both a function of shielding ultraviolet rays and a function of packaging.
  • the organic light emitting diode device shown in FIG. 2 further includes an organic light emitting diode layer 200 and a sealing layer. A cover layer 300 between the layers 400.
  • the material for forming the encapsulation layer may include not only the polymer ink, but also other organic materials for forming the encapsulation layer, and an inorganic material for forming the encapsulation layer.
  • the proportion of the ultraviolet absorber is any value between 0.5% and 1%.
  • the organic light emitting diode device can be specifically selected according to the difference in the requirements for shielding ultraviolet rays.
  • the method for manufacturing the barrier layer includes the following steps:
  • the ultraviolet absorber and the organic material for forming the cover layer are mixed and vapor-deposited, and the vapor deposition process required for forming the cover layer is effectively utilized, and the ultraviolet absorbing cover layer is formed by vapor deposition.
  • one of the processes for forming the coating layer during vapor deposition is not limited to the vapor deposition process, as long as the coating layer capable of absorbing ultraviolet rays can be formed.
  • the material for forming the cover layer may be an organic material for forming a cover layer, and an inorganic material for forming a cover layer may also be employed.
  • the organic material or inorganic material in the ultraviolet absorbing layer structure formed by the ultraviolet absorbing agent and the organic material or the ultraviolet absorbing agent and the inorganic material is not limited to the material for forming the covering layer, and may be an organic light emitting diode.
  • a material for forming another layer structure on the light-emitting side of the organic light-emitting diode layer in the device such as an organic material or an inorganic material for forming a light extraction layer, or a functional layer for forming a cover electrode and a light extraction function.
  • Organic or inorganic materials It is also possible to mix at least one of a cover layer material for covering the electrodes, a light extraction layer material, and an encapsulating layer material with an ultraviolet absorber to form the barrier layer.
  • the proportion of the ultraviolet absorber in the mixture is any value between 0.5% and 1%.
  • the cover layer can also have the function of shielding ultraviolet rays, and the manufacturing method is relatively simple and convenient for processing and manufacturing.
  • the material for forming the cover layer may be an organic material for forming a cover layer, and an inorganic material for forming a cover layer may also be employed.
  • the organic material or the inorganic material in the layer structure capable of absorbing ultraviolet rays formed by the ultraviolet absorber and the organic material or the ultraviolet absorber and the inorganic material is not
  • the material for forming the cover layer may be a material that forms an organic light emitting diode device and is located on another side of the light emitting side of the organic light emitting diode layer, such as an organic material or an inorganic material for forming a light extraction layer, or may be An organic material or an inorganic material for forming a functional layer having a function of covering an electrode and a light extraction function.
  • the method for manufacturing the barrier layer includes the following steps:
  • the ultraviolet absorber and the material for forming the encapsulating layer are mixed to form the ultraviolet absorbing encapsulating layer.
  • the encapsulation layer may be a single layer layer structure or a laminated multi-layer layer structure, as long as the layer structure in the encapsulation layer is composed of an ultraviolet absorber and a material for forming the layer structure. It can be formed.
  • the encapsulation layer comprises a laminated three-layer structure, and the intermediate layer is an ultraviolet absorbing encapsulation layer structure 510 formed by inkjet printing of a UV absorber and a polymer ink; that is, an encapsulation layer capable of absorbing ultraviolet rays.
  • the structure also has the function of shielding ultraviolet rays and having the function of packaging.
  • the material for forming the encapsulation layer may include not only the polymer ink, but also other organic materials for forming the encapsulation layer, and an inorganic material for forming the encapsulation layer.
  • the barrier layer is an ultraviolet absorbing cover layer formed of an ultraviolet absorber and an organic material for forming a cover layer
  • the ultraviolet absorbing cover layer has a thickness of any value between 50 and 80 nanometers.
  • the ultraviolet absorbing covering layer can serve both the covering effect of the covering layer and the ultraviolet shielding effect.
  • FIG. 3 is a schematic view of an organic light emitting diode device 10 according to a third embodiment of the present invention, and the barrier layer 510 may also be separately provided with an ultraviolet reflective agent.
  • the separately formed ultraviolet-reflecting layer structure formed by the ultraviolet reflecting agent shields the ultraviolet rays by reflecting ultraviolet rays, thereby greatly reducing the influence of ultraviolet rays on the organic light-emitting materials in the organic light emitting diode.
  • the organic light emitting diode device 10 illustrated in FIG. 3 further includes a capping layer 300 and an encapsulation layer 400 formed between the organic light emitting diode layer 200 and the barrier layer 510.
  • the ultraviolet reflective agent in the ultraviolet reflective layer structure formed by the ultraviolet reflective agent may be titanium dioxide or zinc oxide because of its high refractive index, which increases the refractive index and reflection of ultraviolet light on the surface of the organic light emitting diode device, thereby The contact between the ultraviolet light and the organic light-emitting material in the organic light-emitting diode is greatly reduced.
  • the ultraviolet absorber may be replaced with a UV reflector or a mixture of an ultraviolet absorber and a reflector, and a similar manufacturing method is employed to form a layer structure capable of absorbing and/or reflecting ultraviolet rays.
  • a separately manufactured method of manufacturing a layer structure capable of reflecting ultraviolet rays formed of an ultraviolet reflective agent includes forming an ultraviolet reflecting agent into the layer structure capable of reflecting ultraviolet rays.
  • the separately disposed ultraviolet light-reflecting layer structure formed by the ultraviolet reflective agent does not affect other steps of the organic light emitting diode device manufacturing method, and the manufacturing method is simple and easy to implement.
  • the thickness of the ultraviolet-reflecting layer structure is any value between 50 and 100 nm.
  • Such a layer of ultraviolet light-reflecting layer structure can reflect most of the ultraviolet light in sunlight.
  • the organic light emitting diode device may be, for example, passive or active driving, and thus may include a driving circuit or the like.
  • a driving circuit or the like For example, for an active driving method, an array circuit layer may be formed on a substrate, including, for example, a switching transistor, a driving transistor, and a storage capacitor.
  • a known drive circuit structure can be employed. Other structures involved in the embodiment will not be described again.
  • the layer structure capable of reflecting ultraviolet rays is located on a side of the light of the organic light emitting diode device facing the outside. In this way, the ultraviolet light in the sunlight is reflected on the side of the organic light emitting diode device facing the outside light, and the ultraviolet light does not or largely does not enter the organic light emitting diode device, thereby greatly reducing the ultraviolet light in the organic light emitting diode.
  • the effect of organic luminescent materials is located on a side of the light of the organic light emitting diode device facing the outside.
  • FIG. 4 is a fourth embodiment of the present invention.
  • the various layer structures in the OLED device of the above-mentioned top-emitting structure and the manufacturing method thereof are also applicable to the OLED device 10 of the bottom-emitting structure, which will not be described herein.
  • a fifth embodiment of the present invention provides a display device including the above organic light emitting diode device.
  • the display device 20 is a liquid crystal display, and includes a display panel 201 and a backlight module 202 .
  • the backlight module 202 includes the above-described organic light emitting diode device 10, and the organic light emitting diode device 10 serves as a backlight of the liquid crystal display to provide backlighting for the display panel 201 to realize a display function.

Abstract

提供一种有机发光二极管器件、其制造方法及显示装置。所述有机发光二极管器件包括：基底(100)；设置在所述基底(100)的一侧的有机发光二极管层(200)；阻挡层(510)，配置为阻挡紫外线进入所述有机发光二极管层(200)；所述阻挡层(510)位于所述有机发光二极管层(200)的出光侧。所述有机发光二极管器件可解决因太阳光中的紫外线的影响导致寿命短的技术问题。

Description

有机发光二极管器件、其制造方法及显示装置 技术领域
本发明的实施例涉及一种有机发光二极管器件、其制造方法及显示装置。
背景技术
有机发光二极管器件包括基底，在基底上依次设置的有机发光二极管层，覆盖层和封装层。由于太阳光中含有大量的紫外线，太阳光中的紫外线会使得有机发光二极管中的有机发光材料发生氧化还原反应导致变质，从而大大缩短有机发光二极管器件的寿命。
发明内容
本公开的第一到第四实施例提供了一种有机发光二极管器件，包括：基底；设置在所述基底的一侧的有机发光二极管层；阻挡层，配置为阻挡紫外线进入所述有机发光二极管层；
所述阻挡层位于所述有机发光二极管层的出光侧。
例如，所述有机发光二极管器件为顶发光结构，所述出光侧位于所述有机发光二极管层远离所述基底的一侧。
例如，所述有机发光二极管器件为底发光结构，所述出光侧位于所述有机发光二极管层靠近所述基底的一侧。
例如，所述阻挡层为有机材料层或无机材料层。例如，所述阻挡层包含紫外线吸收剂和/或紫外线反射剂。
例如，所述阻挡层为用于覆盖电极的覆盖层、光取出层和封装层中的至少之一。
例如，所述紫外线吸收剂包括如下一种或几种的组合：水杨酸酯类、苯酮类、苯并三唑类、取代丙烯腈类、三嗪类和受阻胺类。
例如，所述紫外线反射剂包括如下一种或几种的组合：二氧化钛、氧化锌、滑石粉、陶土、碳酸钙。
本发明的第五实施例提供了一种显示装置，所述显示装置包括上述 有机发光二极管显示器件。
本公开的一个实施例提供了一种有机发光二极管器件的制造方法，包括：在基底的一侧形成有机发光二极管层；在所述有机发光二极管层出光侧形成阻挡层。
例如，在形成所述有机发光二极管层之前在所述基底上形成所述阻挡层，然后在所述阻挡层上形成有所述机发光二极管层，所述出光侧位于所述有机发光二极管层靠近所述基底的一侧。
例如，在所述有机发光二极管层出光侧形成阻挡层包括在所述有机发光二极管层远离所述基底的一侧形成所述阻挡层。例如，在所述有机发光二极管层出光侧形成阻挡层包括：
形成包括紫外线吸收剂和/或紫外线反射剂的材料层。
例如，所述阻挡层是能吸收和/或反射紫外线的层结构，其制造方法包括：将紫外线吸收剂形成所述能吸收紫外线的层结构。
例如，在所述有机发光二极管层出光侧形成阻挡层包括：
将紫外线吸收剂和/或紫外线反射剂和有机材料混合，形成所述阻挡层。例如，将紫外线吸收剂和/或紫外线反射剂和有机材料混合包括：将用于覆盖电极的覆盖层材料、光取出层材料和封装层材料中的至少之一与紫外线吸收剂和/或紫外线反射剂混合，形成所述阻挡层。
例如，在所述有机发光二极管层出光侧形成阻挡层包括将紫外线吸收剂和/或紫外线反射剂和无机材料混合，形成所述阻挡层。
例如，将紫外线吸收剂和/或紫外线反射剂和无机材料混合包括：将用于覆盖电极的覆盖层、光取出层和封装层中的至少之一与紫外线吸收剂和/或紫外线反射剂和混合，形成所述阻挡层。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为本发明的第一实施例的有机发光二极管器件的示意图；
图2为本发明的第二实施例的有机发光二极管器件的示意图；
图3为本发明的第三实施例的有机发光二极管器件的示意图；
图4为本发明的第四实施例的有机发光二极管器件的示意图；
图5为本发明的第五实施例的显示装置的结构示意图。
主要元件附图标记说明：
10有机发光二极管器件，100基底，200有机发光二极管层，300覆盖层，400封装层，510阻挡层，20显示装置，201显示面板，202背光模组。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
本发明的实施例的有机发光二极管器件，如图1，图2，图3和图4所示，包括：基底100、设置在所述基底的一侧的有机发光二极管层200、设置在所述有机发光二极管层出光侧的阻挡层510。所述有机发光二极管层200具有有机发光二极管，该有机发光管可以用于发出所需要的颜色的光刻，例如可以为红光、绿光、蓝光或白光，所述阻挡层配置为阻挡紫外线进入所述有机发光二极管层。
例如，所述有机发光二极管器件可以是顶发光结构，此时所述出光侧位于所述有机发光二极管层远离所述基底的一侧，所述阻挡层也相应位于所述有机发光二极管层远离所述基底的一侧。
例如，所述有机发光二极管器件可以是底发光结构，此时所述出光侧位于所述有机发光二极管层靠近所述基底的一侧，所述阻挡层也相应位于所述有机发光二极管层靠近所述基底的一侧。
本实施例的有机发光二极管器件包括基底，设置在所述基底的一侧的有机发光二极管层，设置在所述有机发光二极管层出光侧的阻挡层。太阳光从所述出光侧照到有机发光二极管器件时，太阳光中的紫外线会被阻挡层屏蔽，极大的降低了紫外线对有机发光二极管中的有机发光材 料影响，进而极大的降低紫外线对有机发光二极管器件的影响，延长了有机发光二极管器件的寿命。
本实施例的有机发光二极管器件的制造方法包括如下步骤：在基底的一侧形成有机发光二极管层；在所述有机发光二极管层出光侧形成阻挡层。所述阻挡层配置为阻挡紫外线进入所述有机发光二极管层。所述有机发光二极管层具有有机发光二极管。
例如，在形成所述有机发光二极管层之前在所述基底上形成所述阻挡层，然后在所述阻挡层上形成有所述机发光二极管层，所述出光侧位于所述有机发光二极管层靠近所述基底的一侧。
例如，在所述有机发光二极管层出光侧形成阻挡层包括在所述有机发光二极管层远离所述基底的一侧形成所述阻挡层。
采用上述制造方法，可以方便的制造出阻挡层的有机发光二极管器件，制造方法简单，便于实现。
阻挡层为了实现屏蔽紫外线功能，形成的材料需要包括紫外线屏蔽剂。紫外线屏蔽剂是指能够反射或吸收紫外线的物质，它可以屏蔽紫外光波，减少紫外线的透射作用。紫外线屏蔽剂包括两种类型，一种是有机类紫外线屏蔽剂即紫外线吸收剂，另一种是无机类紫外线屏蔽剂即紫外线反射剂。紫外线吸收剂是指能吸收波长为270-400nm紫外线的有机化合物，包括如下一种或几种的组合：水杨酸酯类、苯酮类、苯并三唑类、取代丙烯腈类、三嗪类和受阻胺类，此类有机化合物的共同点是在结构上都含有羟基，在形成稳定氢键，氢键螯合环等过程中能吸收能量转变成热能散失。紫外线反射剂作用机理主要是对紫外线进行反射，紫外线反射剂大多是金属氧化物或陶瓷粉末，例如，包括如下一种或几种的组合：二氧化钛、氧化锌、滑石粉、陶土、碳酸钙等，它们都具有较高的折射率，可增加对紫外线的反射和散射。
关于阻挡层的结构，例如，可以是单独设置的由紫外线吸收剂形成的能吸收紫外线的层结构，其中，由紫外线吸收剂形成的能吸收紫外线的层结构是由有机类紫外线屏蔽剂即紫外线吸收剂形成的能吸收紫外线的层结构。单独设置的由紫外线吸收剂形成的能吸收紫外线的层结构，通过吸收紫外线的方式将紫外线屏蔽，极大的降低了紫外线对有机 发光二极管中的有机发光材料影响，进而极大的降低紫外线对有机发光二极管器件的影响，延长了有机发光二极管器件的寿命。
例如，单独设置的由紫外线吸收剂形成的能吸收紫外线的层结构包括：将紫外线吸收剂单独形成所述能吸收紫外线的层结构。
将紫外线吸收剂单独形成所述能吸收紫外线的层结构的制造步骤，不影响有机发光二极管器件制造方法的其他步骤，制造方法简单，便于实现。
关于阻挡层的结构，例如，如图1和图2所示，可以是由紫外线吸收剂和有机材料形成的能吸收紫外线的层结构，也可以是由紫外线吸收剂和无机材料形成的能吸收紫外线的层结构。由紫外线吸收剂和有机材料形成的能吸收紫外线的层结构，一方面具有吸收紫外线的功能，另一方面也具有有机材料形成的有机层的功能，一层结构同时实现了两种功能，有机发光二极管器件的结构较为简单。同理，由紫外线吸收剂和无机材料形成的能吸收紫外线的层结构，一方面具有吸收紫外线的功能，另一方面也具有无机材料形成的无机层的功能，一层结构同时实现了两种功能，有机发光二极管器件的结构较为简单。
例如，由紫外线吸收剂和有机材料形成的能吸收紫外线的层结构的制造方法包括：将紫外线吸收剂和有机材料混合，形成所述能吸收紫外线的层结构。
在制造有机发光二极管器件过程中，会有需要形成各种有机的层结构的制造步骤，在形成有机的层结构时将紫外线吸收剂和有机材料混合，形成所述能吸收紫外线的层结构，有机发光二极管器件的制造方法的步骤增加的较少，相对简单，便于实现。
例如，由紫外线吸收剂和无机材料形成的能吸收紫外线的层结构的制造方法包括：将紫外线吸收剂和无机材料混合，形成所述能吸收紫外线的层结构。
在制造有机发光二极管器件过程中，会有需要形成各种无机的层结构的制造步骤，在形成无机的层结构时将紫外线吸收剂和无机材料混合，形成所述能吸收紫外线的层结构，有机发光二极管器件的制造方法的步骤增加的较少，相对简单，便于实现。
同样地，也可以形成单独由紫外线反射剂形成的能反射紫外线的阻挡层，或者由紫外线反射剂与有机材料或无机材料形成的能反射紫外线的阻挡层。这里不再赘述。
本发明的第一实施例到第三实施例以所述有机发光二极管器件为顶发光结构进行详细说明。
关于由紫外线吸收剂和有机材料形成的能吸收紫外线的阻挡层的具体结构，可以是为用于覆盖电极的覆盖层、光取出层和封装层中的至少之一。例如，如图1所示，图1为本发明第一实施例的有机发光二极管器件10的示意图，阻挡层510是由紫外线吸收剂和用于形成覆盖层的材料形成的能吸收紫外线的覆盖层，其中，能吸收紫外线的覆盖层的作用之一在于具有覆盖电极的功能，作用之二在于具有屏蔽紫外线的功能；图1所示的有机发光二极管器件还包括形成在能吸收紫外线的覆盖层远离基底一侧的封装层400。需要说明的是，用于形成覆盖层的材料可以采用用于形成覆盖层的有机材料，还可以采用用于形成覆盖层的无机材料。
需要进一步说明的是，由紫外线吸收剂和有机材料或紫外线吸收剂和无机材料形成的能吸收紫外线的层结构中的有机材料或无机材料不限于用于形成覆盖层的材料，还可以是有机发光二极管器件中形成位于有机发光二极管层出光侧的其他层结构的材料，如可以是用于形成光取出层的有机材料或无机材料，还可以是用于形成具有覆盖电极及光取出功能的功能层的有机材料或无机材料。
所述阻挡层还可以是由紫外线吸收剂和用于形成封装层的材料形成的能吸收紫外线的封装层。需要说明的是，封装层可以是单层的层结构，也可以是层叠的多层层结构，只要是封装层中的一层层结构是由紫外线吸收剂和用于形成该层层结构的材料形成的即可。例如，如图2所示，图2为本发明第二实施例的有机发光二极管器件10的示意图，封装层包括层叠的三层结构，阻挡层510为中间层，是由紫外线吸收剂和聚合物墨水喷墨打印形成的能吸收紫外线的封装层结构；即能吸收紫外线的封装层结构同时具有屏蔽紫外线的功能和具有封装的功能。图2所示的有机发光二极管器件还包括形成在有机发光二极管层200和封 装层400之间的覆盖层300。需要说明的是，用于形成封装层的材料不仅可以包括聚合物墨水，还可以包括其他用于形成封装层的有机材料，还可以采用用于形成封装层的无机材料。
关于阻挡层中紫外线吸收剂的量，紫外线吸收剂所占的比例是0.5％-1％之间的任一值。可以根据有机发光二极管器件对屏蔽紫外线的要求的不同，具体进行选择。
当所述阻挡层是由紫外线吸收剂和用于形成覆盖电极的覆盖层的有机材料形成的能吸收紫外线的覆盖层时，所述阻挡层的制造方法包括下述步骤：
将紫外线吸收剂和用于形成覆盖层的有机材料混合蒸镀，有效的利用形成覆盖层时所需采用的蒸镀工艺，蒸镀形成所述能吸收紫外线的覆盖层。需要说明的是，蒸镀时形成覆盖层的工艺之一，不限于蒸镀工艺，只要是能形成所述能吸收紫外线的覆盖层即可。还需要说明的是，用于形成覆盖层的材料可以采用用于形成覆盖层的有机材料，还可以采用用于形成覆盖层的无机材料。
需要进一步说明的是，由紫外线吸收剂和有机材料或紫外线吸收剂和无机材料形成的能吸收紫外线的层结构中的有机材料或无机材料不限于用于形成覆盖层的材料，可以是有机发光二极管器件中形成位于有机发光二极管层出光侧的其他层结构的材料，如可以是用于形成光取出层的有机材料或无机材料，还可以是用于形成具有覆盖电极及光取出功能的功能层的有机材料或无机材料。还可以将用于覆盖电极的覆盖层材料、光取出层材料和封装层材料中的至少之一与紫外线吸收剂混合，形成所述阻挡层。
例如，所述紫外线吸收剂在混合物中所占的比例是0.5％-1％之间的任一值。
这样，覆盖层还可以具有屏蔽紫外线的功能，且制造方法相对简单，便于加工制造。需要说明的是，用于形成覆盖层的材料可以采用用于形成覆盖层的有机材料，还可以采用用于形成覆盖层的无机材料。
需要进一步说明的是，由紫外线吸收剂和有机材料或紫外线吸收剂和无机材料形成的能吸收紫外线的层结构中的有机材料或无机材料不 限于用于形成覆盖层的材料，可以是形成有机发光二极管器件且位于有机发光二极管层出光侧的其他层结构的材料，如可以是用于形成光取出层的有机材料或无机材料，还可以是用于形成具有覆盖电极及光取出功能的功能层的有机材料或无机材料。
当所述阻挡层是由紫外线吸收剂和用于形成封装层的材料形成的能吸收紫外线的封装层时，所述阻挡层的制造方法包括下述步骤：
将紫外线吸收剂和用于形成封装层的材料混合，形成所述能吸收紫外线的封装层。
需要说明的是，封装层可以是单层的层结构，也可以是层叠的多层层结构，只要是封装层中的一层层结构是由紫外线吸收剂和用于形成该层层结构的材料形成的即可。例如，如图2所示，封装层包括层叠的三层层结构，中间层是由紫外线吸收剂和聚合物墨水喷墨打印形成的能吸收紫外线的封装层结构510；即能吸收紫外线的封装层结构同时具有屏蔽紫外线的功能和具有封装的功能。图2所示的有机发光二极管器件还包括形成在有机发光二极管层200和封装层400之间的覆盖层300。需要说明的是，用于形成封装层的材料不仅可以包括聚合物墨水，还可以包括其他用于形成封装层的有机材料，还可以采用用于形成封装层的无机材料。
当所述阻挡层是由紫外线吸收剂和用于形成覆盖层的有机材料形成的能吸收紫外线的覆盖层时，所述能吸收紫外线的覆盖层的厚度为50-80纳米之间的任一值。这样，所述能吸收紫外线的覆盖层既能起到覆盖层所应起到的覆盖作用，也能起到屏蔽紫外线的作用。
关于阻挡层的示例性结构，如图3所示，图3是本发明第三实施例的有机发光二极管器件的10的示意图，所述阻挡层510还可以是单独设置的由紫外线反射剂形成的能反射紫外线的层结构。
单独设置的由紫外线反射剂形成的能反射紫外线的层结构，通过反射紫外线的方式将紫外线屏蔽，极大的降低了紫外线对有机发光二极管中的有机发光材料影响。图3所示的有机发光二极管器件10还包括形成在有机发光二极管层200和阻挡层510之间的覆盖层300和封装层400。
例如，由紫外线反射剂形成的能反射紫外线的层结构中的紫外线反射剂可以是二氧化钛或氧化锌，因为其具备较高的折射率，可增加有机发光二极管器件表面对紫外线的折射和反射，从而极大的减少了紫外线与有机发光二极管中的有机发光材料接触。
在上述各种层结构的制造方法中，所述紫外线吸收剂可以替换成紫外线反射剂或者紫外线吸收剂和反射剂的混合物，采用类似的制造方法以形成能吸收和/或反射紫外线的层结构。
例如，单独设置的由紫外线反射剂形成的能反射紫外线的层结构的制造方法包括：将紫外线反射剂形成所述能反射紫外线的层结构。
单独设置的由紫外线反射剂形成的能反射紫外线的层结构，不影响有机发光二极管器件制造方法的其他步骤，制造方法简单，便于实现。
当所述阻挡层是由紫外线反射剂形成的能反射紫外线的层结构时，所述能反射紫外线的层结构的厚度是50-100纳米之间的任一值。这样厚度的能反射紫外线的层结构，能反射大部分太阳光中的紫外线。
该有机发光二极管器件例如可以为无源或有源驱动方式，因此可以包括驱动电路等，例如，对于有源驱动方式，可以在基底上形成阵列电路层，包括例如开关晶体管、驱动晶体管、存储电容等电路元件，可以采用已知的驱动电路结构。对于实施例所涉及的其它结构不再赘述。
更进一步的，所述能反射紫外线的层结构位于所述有机发光二极管器件面向外界的光的一侧。这样，太阳光中的紫外线在有机发光二极管器件面向外界的光的一侧就会发生反射，紫外线不会或大部分不会进入有机发光二极管器件内，极大的降低了紫外线对有机发光二极管中的有机发光材料影响。
以上均以所述有机发光二极管器件为顶发光结构为例进行说明，可以理解地，所述有机发光二极管器件也可以是底发光结构，请参阅图4，图4为本发明第四实施例的有机发光二极管器件10的示意图。此时所述出光侧位于所述有机发光二极管层靠近所述基底的一侧，所述阻挡层510也相应位于所述有机发光二极管层靠近所述基底的一侧。上述顶发光结构的有机发光二极管器件中的各种层结构及其制作方法也同样适用于底发光结构的有机发光二极管器件10，在此不再赘述。
本发明第五实施例提供一种显示装置，包括上述有机发光二极管器件。例如，请参阅图5，所述显示装置20为液晶显示器，包括显示面板201和背光模组202。背光模组202包括上述有机发光二极管器件10，有机发光二极管器件10作为所述液晶显示器的背光源为所述显示面板201提供背光以实现显示功能。
以上所述仅是本发明的示范性实施方式，而非用于限制本发明的保护范围，本发明的保护范围由所附的权利要求确定。
本申请要求于2017年2月14日递交的中国专利申请第201710078837.1号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (21)

  1. 一种有机发光二极管器件，包括：
    基底；
    有机发光二极管层，位于所述基底的一侧；
    阻挡层，配置为阻挡紫外线进入所述有机发光二极管层；
    其中，所述阻挡层位于所述有机发光二极管层的出光侧。
  2. 根据权利要求1所述的有机发光二极管器件，其中，所述阻挡层包含紫外线吸收剂和/或紫外线反射剂。
  3. 根据权利要求1-2任一项所述的有机发光二极管器件，其中，所述阻挡层位于所述有机发光二极管层远离所述基底的一侧，且所述阻挡层为有机材料层。
  4. 根据权利要求3所述的有机发光二极管器件，其中，所述阻挡层为用于覆盖电极的覆盖层、光取出层和封装层中的至少之一。
  5. 根据权利要求1-2任一项所述的有机发光二极管器件，其中，所述阻挡层位于所述有机发光二极管层远离所述基底的一侧，且所述阻挡层为无机材料层。
  6. 根据权利要求5所述的有机发光二极管器件，其中，所述阻挡层为用于覆盖电极的覆盖层、光取出层和封装层中的至少之一。
  7. 根据权利要求1所述的有机发光二极管器件，其中，所述有机发光二极管器件为顶发光结构，所述出光侧位于所述有机发光二极管层远离所述基底的一侧。
  8. 根据权利要求1所述的有机发光二极管器件，其中，所述有机发光二极管器件为底发光结构，所述出光侧位于所述有机发光二极管层靠近所述基底的一侧。
  9. 根据权利要求2-8中任意一项所述的有机发光二极管器件，其中，所述紫外线吸收剂包括如下一种或几种的组合：水杨酸酯类、苯酮类、苯并三唑类、取代丙烯腈类、三嗪类和受阻胺类。
  10. 根据权利要求2-8任意一项所述的有机发光二极管器件，其中，所述紫外线反射剂包括如下一种或几种的组合：二氧化钛、氧化锌、滑 石粉、陶土、碳酸钙。
  11. 一种显示装置，包括权利要求1-10任一项所述的有机发光二极管器件。
  12. 一种有机发光二极管器件的制造方法，包括：
    在基底的一侧形成有机发光二极管层；
    在所述有机发光二极管层出光侧形成阻挡层，所述阻挡层配置为阻挡紫外线进入所述有机发光二极管层。
  13. 根据权利要求12所述的有机发光二极管器件的制造方法，其中，在形成所述有机发光二极管层之前在所述基底上形成所述阻挡层，然后在所述阻挡层上形成有所述机发光二极管层，所述出光侧位于所述有机发光二极管层靠近所述基底的一侧。
  14. 根据权利要求12所述的有机发光二极管器件的制造方法，其中，在所述有机发光二极管层出光侧形成所述阻挡层包括在所述有机发光二极管层远离所述基底的一侧形成所述阻挡层。
  15. 根据权利要求12-14任意一项所述的有机发光二极管器件的制造方法，其中，在所述有机发光二极管层出光侧形成阻挡层包括：
    形成包括紫外线吸收剂和/或紫外线反射剂的材料层。
  16. 根据权利要求12-15所述的有机发光二极管器件的制造方法，其中，在所述有机发光二极管层出光侧形成阻挡层包括：
    将紫外线吸收剂和/或紫外线反射剂和有机材料混合，形成所述阻挡层。
  17. 根据权利要求16所述的有机发光二极管器件的制造方法，其中，将紫外线吸收剂和/或紫外线反射剂和有机材料混合包括：将用于覆盖电极的覆盖层材料、光取出层材料和封装层材料中的至少之一与紫外线吸收剂和/或紫外线反射剂混合，形成所述阻挡层。
  18. 根据权利要求12-15述的有机发光二极管器件的制造方法，其中，在所述有机发光二极管层出光侧形成阻挡层包括将紫外线吸收剂和/或紫外线反射剂和无机材料混合，形成所述阻挡层。
  19. 根据权利要求18所述的有机发光二极管器件的制造方法，其中，将紫外线吸收剂和/或紫外线反射剂和无机材料混合包括：将用于 覆盖电极的覆盖层、光取出层和封装层中的至少之一与紫外线吸收剂和/或紫外线反射剂和混合，形成所述阻挡层。
  20. 根据权利要求15-19中任意一项所述的有机发光二极管器件的制造方法，其中，所述紫外线吸收剂包括如下一种或几种的组合：水杨酸酯类、苯酮类、苯并三唑类、取代丙烯腈类、三嗪类和受阻胺类。
  21. 根据权利要求15-19中任意一项所述的有机发光二极管器件的制造方法，其中，所述紫外线反射剂包括如下一种或几种的组合：二氧化钛、氧化锌、滑石粉、陶土、碳酸钙。
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