WO2018147222A1

WO2018147222A1 - Semiconductor device

Info

Publication number: WO2018147222A1
Application number: PCT/JP2018/003793
Authority: WO
Inventors: 邦夫岩城; 秀之内海
Original assignee: ローム株式会社
Priority date: 2017-02-10
Filing date: 2018-02-05
Publication date: 2018-08-16

Abstract

This semiconductor device is provided with a substrate, a light emitting element, a light detection means, a case, a light transmitting member and a light blocking layer. The substrate has a main surface and a back surface. The light emitting element is mounted on the main surface of the substrate. The light detection means is mounted on the main surface at a distance from the light emitting element. The light detection means comprises a first detection part that detects light emitted from the light emitting element. The case surrounds the light detection means, while being supported by the main surface. The light transmitting member has an inner surface that faces toward the main surface and an outer surface that faces toward a direction which is opposite to the direction toward which the inner surface faces. The light transmitting member is supported by the case at a distance from the light detection means in the thickness direction of the substrate. The light blocking layer is provided on the light transmitting member and blocks light in the wavelength range that corresponds to the light emitted from the light emitting element. The light blocking layer is provided with a first opening that faces the first detection part when viewed from the thickness direction of the substrate.

Description

Semiconductor device

The present disclosure relates to a semiconductor device, and more particularly to a semiconductor device having a light detection function.

A proximity sensor is known as an example of a semiconductor device having a light detection function. For example, Patent Document 1 discloses a proximity sensor in which a light emitting element and a light receiving element are mounted on one substrate. Such a proximity sensor is incorporated in an electronic device such as a smartphone or a tablet terminal, and is used to detect an object (“detection target object”) close to the device. As an example, a housing of an electronic device (for example, a smartphone) is provided with an optical window that transmits light. The light emitted from the light emitting element exits to the outside through the optical window and then reflects on the detection target. This reflected light returns into the housing of the electronic device and is detected by the light receiving element.

The following problems may occur in conventional proximity sensors. That is, when a part of the light emitted from the light emitting element is reflected without passing through the optical window and is directly detected by the light receiving element (that is, not reflected by an object outside the housing) There is. This is a phenomenon generally called “crosstalk”. When the amount of light (also referred to as a pseudo signal or noise) related to such crosstalk increases, it is erroneously determined that an object has come close even though it does not actually exist.

JP 2010-34189 A

One of the problems of the present disclosure is to provide a semiconductor device that can improve the reliability of detection of a detection target object by suppressing erroneous detection as described above.

A semiconductor device provided by the first aspect of the present disclosure includes a substrate having a main surface and a back surface, a light emitting element mounted on the main surface, and light mounted on the main surface apart from the light emitting element. A light detection means having a first detection unit for detecting light emitted from the light emitting element; a case surrounding the light detection means and supported by the main surface; and the main surface side A translucent member having an inner surface facing the inner surface and an outer surface facing the opposite side of the inner surface, the translucent member being supported by the case at a distance from the light detection means in the thickness direction of the substrate, and the translucent member A light-shielding layer provided on the optical member, wherein the light-shielding layer does not transmit light in a wavelength band corresponding to the light emitted from the light-emitting element. The light-shielding layer is formed with a first opening that faces the first detector when viewed in the thickness direction of the substrate.

The semiconductor device provided by the second aspect of the present disclosure includes a substrate having a main surface and a back surface, a light emitting element mounted on the main surface, and a distance from the light emitting element in the first direction on the main surface. A light-receiving element mounted on the light-receiving element having a detection unit for detecting light emitted from the light-emitting element; a case surrounding the light-emitting element and supported by the main surface; and a thickness of the substrate And a translucent member supported by the case at a distance from the light emitting element. The translucent member is provided with a refracting portion that refracts light emitted from the light emitting element in a direction away from the light receiving element in the first direction.

Other features and advantages of the semiconductor device of the present disclosure will become more apparent from the detailed description given below with reference to the accompanying drawings.

1 is a perspective view of a semiconductor device according to a first embodiment of the present disclosure. 1 is a plan view of a semiconductor device according to a first embodiment. It is a top view which shows the internal wiring state in the semiconductor device of 1st Embodiment. It is a bottom view of the semiconductor device of a 1st embodiment. FIG. 5 is a cross-sectional view taken along line VV in FIG. 2. FIG. 6 is a cross-sectional view taken along line VI-VI in FIG. 2. FIG. 3 is a sectional view taken along line VII-VII in FIG. 2. It is a top view which shows the light emitting element in the semiconductor device of 1st Embodiment. FIG. 9 is a cross-sectional view taken along line IX-IX in FIG. 8. It is sectional drawing of the light receiving element in the semiconductor device of 1st Embodiment. It is a perspective view which shows the translucent member provided with the light shielding layer. It is an enlarged view explaining a part of structure shown by FIG. It is a figure explaining the modification of the structure shown in FIG. It is a figure explaining another modification of the composition shown in FIG. FIG. 3 is an enlarged view for explaining a part of the configuration shown in FIG. 2. It is a figure explaining the modification of the structure shown in FIG. It is a figure explaining another modification of the composition shown in FIG. It is a figure explaining another modification of the composition shown in FIG. It is a figure explaining another modification of the composition shown in FIG. It is sectional drawing explaining the effect of the semiconductor device of 1st Embodiment. It is a top view of a semiconductor device based on a 2nd embodiment of this indication. FIG. 22 is a sectional view taken along line XXII-XXII in FIG. 21. It is a top view of a semiconductor device based on a 3rd embodiment of this indication. FIG. 24 is a sectional view taken along line XXIV-XXIV in FIG. It is a top view of a semiconductor device based on a 4th embodiment of this indication. FIG. 26 is a sectional view taken along line XXVI-XXVI in FIG. 25. It is a top view of a semiconductor device based on a 5th embodiment of this indication. FIG. 28 is a sectional view taken along line XXVIII-XXVIII in FIG. 27. It is a perspective view of a semiconductor device based on a 6th embodiment of this indication. It is a top view of the semiconductor device of a 6th embodiment. It is a top view which shows the internal wiring state in the semiconductor device of 6th Embodiment. It is a bottom view of the semiconductor device of a 6th embodiment. FIG. 31 is a cross-sectional view taken along line XXXIII-XXXIII in FIG. 30. FIG. 31 is a cross-sectional view taken along line XXXIV-XXXIV in FIG. 30. FIG. 31 is a cross-sectional view taken along line XXXV-XXXV in FIG. 30. It is a perspective view explaining the translucent member in the semiconductor device of 6th Embodiment. It is an enlarged view explaining the refractive part provided in the said translucent member. It is a cross-sectional enlarged view explaining the modification of the said refractive part. It is a cross-sectional enlarged view explaining another modification of the said refractive part. It is sectional drawing of the light receiving element in the semiconductor device of 6th Embodiment. It is sectional drawing explaining the effect of the semiconductor device of 6th Embodiment. It is a top view of a semiconductor device based on a 7th embodiment of this indication. FIG. 43 is a sectional view taken along line XLIII-XLIII in FIG. 42. It is a top view of a semiconductor device based on an 8th embodiment of this indication. FIG. 45 is a cross-sectional view taken along line XLV-XLV in FIG. 44. It is a top view of a semiconductor device based on a 9th embodiment of this indication. FIG. 47 is a sectional view taken along line XLVII-XLVII in FIG. 46.

Hereinafter, exemplary embodiments will be described with reference to the accompanying drawings. 1 to 20 are explanatory diagrams of the semiconductor device A10 according to the first embodiment of the present disclosure. The semiconductor device A10 includes a substrate 10, a light emitting element 31, a light detecting means (light receiving element) 32, a case 40, and a light transmitting member 50. A plurality of inner conductors 21, a plurality of outer conductors 22, a plurality of intermediate conductors 23, a main surface insulating film 28 and a back surface insulating film 29 are arranged on the substrate 10. 1 and 2, the translucent member 50 is indicated by a two-dot chain line. In FIG. 3, the case 40 and the translucent member 50 are omitted.

The semiconductor device A10 shown in FIGS. 1 to 20 is of a type that is surface-mounted on a circuit board of an electronic device such as a smartphone or a tablet terminal. As illustrated in FIG. 1, the shape of the semiconductor device A <b> 10 in the thickness direction z view (also referred to as “plan view”) of the substrate 10 is a rectangular shape. For convenience of explanation, a direction along the long side of the semiconductor device A10 is referred to as a first direction x (perpendicular to the thickness direction z). A direction along the short side of the semiconductor device A10 is referred to as a second direction y (perpendicular to both the thickness direction z and the first direction x).

The substrate 10 is a member for mounting the light emitting element 31 and the light receiving element 32 and mounting the semiconductor device A10 on the circuit board as shown in FIGS. 1 to 3 and FIG. The substrate 10 is an electrical insulator and is made of, for example, a glass epoxy resin. The shape of the substrate 10 in plan view is a rectangular shape having the first direction x as a long side. The substrate 10 has a main surface 11 and a back surface 12. The substrate 10 is provided with a plurality of through holes 13. As shown in FIG. 6, each through hole 13 extends from the main surface 11 to the back surface 12, and the intermediate conductor 23 is disposed so as to fill the through hole. As shown in FIGS. 3 and 4, a plurality of intermediate conductors 23 are embedded in the substrate 10.

As shown in FIGS. 3 to 5, the main surface 11 and the back surface 12 are surfaces facing opposite sides in the thickness direction z. The main surface 11 and the back surface 12 have a rectangular shape with a long side in the first direction x in a plan view, and are flat surfaces. On the main surface 11, the inner conductor 21 and the main surface insulating film 28 are disposed, and the light emitting element 31 and the light receiving element 32 are mounted. A case 40 is supported on the main surface 11. The back surface 12 is a surface facing the circuit board when the semiconductor device A10 is mounted. An external conductor 22 and a back surface insulating film 29 are disposed on the back surface 12.

The inner conductor 21 is made of Cu, for example. As shown in FIGS. 3 and 5 to 7, the inner conductor 21 of the present embodiment includes one first inner conductor 211 and a plurality of second inner conductors 212. The first inner conductor 211 is electrically connected to the light emitting element 31, and each second inner conductor is electrically connected to the light receiving element 32. The first inner conductor 211 and the second inner conductor 212 are separated from each other with a partition wall 43 (described later) of the case 40 as a boundary in the first direction x. Unlike this, the first inner conductor 211 and at least one second inner conductor 212 may be electrically connected to each other on the main surface 11. All the inner conductors 21 of this embodiment are covered with a plating layer. The plating layer is composed of, for example, a Ni layer and an Au layer stacked on each other.

As shown in FIG. 3, the first inner conductor 211 includes a first pad portion 211a and a die pad portion 211b. The die pad portion 211b is separated from the first pad portion 211a in the second direction y, and the light emitting element 31 is mounted thereon. The first pad portion 211 a is electrically connected to the light emitting element 31 through the first wire 38. The die pad portion 211b is electrically connected to the light emitting element 31 via the first bonding layer 33 (see FIG. 5). Each of the first pad portion 211a and the die pad portion 211b is electrically connected to one corresponding intermediate conductor 23.

As shown in FIG. 3, a rectangular second pad portion 212 a is provided at the tip of each second inner conductor 212. Each of the second pad portions 212a is arranged along the second direction y. Each second pad portion 212 a is electrically connected to the light receiving element 32 via the second wire 39. Each second inner conductor 212 is electrically connected to the corresponding one intermediate conductor 23.

The main surface insulating film 28 is an electric insulating member that covers at least a part of each of the first inner conductor 211 and the second inner conductor 212 as shown in FIGS. 3 and 5 to 7. The main surface insulating film 28 is, for example, a solder resist film. A first opening 281 and a second opening 282 are formed in the main surface insulating film 28. A part of the first inner conductor 211 is exposed from the first opening 281, and the light emitting element 31 and the first wire 38 are in the first opening 281 in a plan view (in other words, the light emitting element 31 and the first wire 38 1 wire 38 is surrounded by a peripheral edge defining the first opening 281). From the second opening 282, the second pad portion 212a which is a part of the second inner conductor 212 is exposed.

The outer conductor 22 is a conductive member that conducts to the light emitting element 31 or the light receiving element 32 via the intermediate conductor 23 and the inner conductor 21 as shown in FIGS. 4, 6, and 7. Each outer conductor 22 is disposed on the back surface 12 of the substrate 10 and is electrically connected to the first inner conductor 211 or one second inner conductor 212 via the intermediate conductor 23. The outer conductor 22 and the intermediate conductor 23 are made of the same material (for example, Cu) as the inner conductor 21. The outer conductor 22 is covered with a plating layer in the same manner as the inner conductor 21. The plating layer is composed of, for example, a Ni layer and an Au layer stacked on each other.

The back surface insulating film 29 is an electrical insulating member that covers a part of each external conductor 22 as shown in FIGS. The back surface insulating film 29 is, for example, a solder resist film, like the main surface insulating film 28. When the semiconductor device A10 is mounted on the circuit board, the external conductor 22 exposed from the back surface insulating film 29 is electrically connected to the wiring pattern formed on the circuit board via cream solder or the like.

The light emitting element 31 is a semiconductor element that emits light (electromagnetic wave) having a predetermined wavelength, and is, for example, a semiconductor laser (such as a vertical cavity surface emitting laser). In the present embodiment, the light emitting element 31 emits infrared rays (for example, a wavelength of 800 nm or more). Alternatively, the light emitting element 31 may be a light emitting diode. As shown in FIGS. 2, 3, and 8, a light emitting region 311 that emits light in the thickness direction z and an upper surface electrode 312 to which the first wire 38 is connected are provided on the upper surface of the light emitting element 31. It has been. The light emitting element 31 is electrically connected to the first pad portion 211 a through the first wire 38. A lower surface electrode 313 (see FIG. 9) is provided on the lower surface of the light emitting element 31, and the light emitting element 31 is electrically connected to the die pad portion 211 b through the first bonding layer 33.

A case where the light emitting element 31 is a vertical cavity surface emitting laser (VCSEL) will be described with reference to FIGS. The light emitting element 31 includes a semiconductor substrate 310, an upper surface electrode 312, a lower surface electrode 313, a first DBR layer 315, a second DBR layer 316, an active layer 317, an insulating layer 318, and a current confinement layer 319. Here, DBR is a distributed Bragg reflector.

The semiconductor substrate 310 is made of a compound semiconductor such as GeAs. A first DBR layer 315 is disposed on the upper surface of the semiconductor substrate 310, and a lower surface electrode 313 is disposed on the lower surface. A second DBR layer 316 is disposed on a part of the upper surface of the first DBR layer 315. An active layer 317 is disposed between the first DBR layer 315 and the second DBR layer 316.

The active layer 317 is made of a compound semiconductor and emits light having a wavelength of λp by spontaneous emission and stimulated emission. λp is 940 nm or 850 nm. The first DBR layer 315 and the second DBR layer 316 are made of a semiconductor compound and efficiently reflect the light emitted from the active layer 317. For example, the first DBR layer 315 includes two layers having different refractive indexes as a set, and a plurality of such sets are stacked. Each layer in each set is made of AlGaAs and has a thickness of λp / 4. The second DBR layer 316 has the same configuration as the first DBR layer 315. However, the thickness may be different between the second DBR layer 316 and the first DBR layer 315 or may be the same. In the example illustrated in FIG. 9, the first DBR layer 315 is configured to be thicker than the second DBR layer 316, but the present disclosure is not limited thereto. In the present embodiment, the first DBR layer 315 is set to be an n-type semiconductor layer, and the second DBR layer 316 is set to be a p-type semiconductor layer.

The current confinement layer 319 includes a predetermined amount of Al and is easily oxidized. The current confinement layer 319 is formed inside the second DBR layer 316. The current confinement layer 319 is formed by oxidizing a part of the second DBR layer 316. Note that the current confinement layer 319 can also be formed by ion implantation. In plan view, an opening is formed in the current confinement layer 319 so as to overlap the light emitting region 311, and current flows through the opening.

The insulating layer 318 is disposed so as to cover the first DBR layer 315 and the second DBR layer 316. The insulating layer 318 is made of, for example, SiO ₂ .

The upper surface electrode 312 is disposed so as to cover the insulating layer 318. The upper surface electrode 312 is made of a metal such as Au, for example. A through-hole (circular shape in plan view) that defines the light emission region 311 is formed in the upper surface electrode 312. The insulating layer 318 is exposed from the through hole. In the vicinity of the light emitting region 311, at least one opening is formed in the insulating layer 318, and a part of the upper surface electrode 312 is disposed in the opening and is electrically connected to the second DBR layer 316.

The second DBR layer 316 is formed with an annular recess 314 that surrounds the light emission region 311 in a plan view and is recessed in the thickness direction z. The annular recess 314 is recessed up to the first DBR layer 315. The entire surface of the annular recess 314 is covered with an insulating layer 318. As can be understood from FIG. 9, the active layer 317 has a region that overlaps with the light emission region 311 in a plan view and is wider than the light emission region. This region is separated from other regions of the active layer 317 by the annular recess 314 (and the insulating layer 318). As described above, the first wire 38 is connected to the upper surface electrode 312. Specifically, as shown in FIG. 8, the upper surface electrode 312 has a circular portion that is separated from the light emitting region 311 and the annular recess 314. One end of the first wire 38 is fixed to this circular portion.

In the present embodiment, there is one light emitting region 311 provided in the light emitting element 31. Instead of this, a plurality of light emitting regions 311 (3 or 4 as an example) may be provided in the light emitting element 31.

As shown in FIG. 5 and FIG. 7, the first bonding layer 33 is interposed between the lower surface electrode 313 of the light emitting element 31 and the die pad portion 211 b of the first inner conductor 211. The light emitting element 31 is mounted on a die pad portion 211b disposed on the main surface 11 by die bonding. The first bonding layer 33 is made of, for example, Ag paste (epoxy resin containing Ag).

The light receiving element 32 is a semiconductor element, and is supported on the main surface 11 at a position spaced from the light emitting element 31 in the first direction x, as shown in FIGS. 3 and 5. As shown in FIG. 3 or FIG. 10, the light receiving element 32 includes a plurality of electrode pads 321, a functional region 322, a laminated optical film 323, a first detection unit 351, and a second detection unit 352. As an example, the light receiving element 32 may be configured by an integrated circuit (IC) including these elements. In FIG. 10, it appears that there are two functional areas 322, but these are actually connected to form one functional area.

The light emitted from the light emitting element 31 (infrared rays in the present embodiment) is detected by the first detection unit 351. The first detection unit 351 is, for example, a photodiode, and outputs a predetermined voltage when light is detected. The second detection unit 352 detects light having a wavelength band different from that of the first detection unit 351. For example, the second detection unit 352 detects visible light (for example, the wavelength band is 380 to 780 nm). The second detection unit 352 is configured by, for example, a photodiode. The second detection unit 352 can be in an illuminance sensor format that detects all bands of visible light at once, or in an RGB color sensor format that detects visible light by separating it into red, green, and blue color signals.

Each electrode pad 321 is made of, for example, Al, and is electrically connected to one of the first detection unit 351, the second detection unit 352, and the functional region 322. As shown in FIG. 3, each electrode pad 321 is electrically connected to one corresponding second inner conductor 212 through the second wire 39. The functional region 322 is electrically connected to the first detection unit 351 and the second detection unit 352, and outputs a light detection signal (proximity signal) based on output signals from the first detection unit 351 and the second detection unit 352. For example, the functional area 322 A / D converts the output current from each of the

detection units

351 and 352, and outputs a predetermined light detection signal according to the conversion result. Or based on the output voltage from each detection part 351,352, the function area | region 322 outputs a photon detection signal, when the said voltage exceeds the predetermined threshold value.

The laminated optical film 323 transmits only light in a wavelength band corresponding to the light emitted from the light emitting element 31. The laminated optical film 323 is made of, for example, a synthetic resin. In the light receiving element 32, the laminated optical film 323 covers the first detection unit 351 and the functional region 322. Therefore, the first detection unit 351 and the functional region 322 are not affected by light in a wavelength band corresponding to visible light (light detected by the second detection unit 352). In the example shown in FIG. 10, the first detection unit 351 is provided close to the laminated optical film 323 (for example, so as to be in direct contact), and the functional region 322 is provided apart from the laminated optical film 323. However, the present disclosure is not limited to this.

In the present embodiment, the first detector 351 and the second detector 352 are formed in one light receiving element 32. Instead of this, for example, the first detector 351 may be formed in one of the two light receiving elements 32 and the second detector 352 may be formed in the other light receiving element 32. Alternatively, using the three light receiving elements 32, the first detection unit 351 is formed in the first light receiving element 32, the second detection unit 352 of the illuminance sensor type is formed in the second light receiving element 32, and the third A second detector 352 in the form of an RGB color sensor may be formed on the light receiving element 32.

As shown in FIGS. 5 and 6, the second bonding layer 34 is an electrical insulating member interposed between the light receiving element 32 and the main surface insulating film 28. The light receiving element 32 is fixed to the main surface 11 of the substrate 10 by the second bonding layer 34. The second bonding layer 34 is made of, for example, an epoxy resin or polyimide.

The first wire 38 is a conductive member that connects the upper surface electrode 312 of the light emitting element 31 and the first pad portion 211a of the first internal conductor 211, as shown in FIGS. In the present embodiment, the first wire 38 is disposed along the second direction y in plan view. Further, as shown in FIGS. 3 and 5, the second wire 39 connects one electrode pad 321 (light receiving element 32) and a corresponding second pad portion 212 a (second internal conductor 212). It is a conductive member. In the present embodiment, any second wire 39 is located between the light emitting element 31 and the light receiving element 32 in the first direction x. The plurality of second wires 39 are arranged to be separated from each other along one side of the light receiving element 32 in plan view. Instead of this, the plurality of second wires 39 may be arranged along two sides (for example, two sides separated from each other in the first direction x), three sides, or four sides of the light receiving element 32. The first wire 38 and the plurality of second wires 39 are made of the same material (for example, Au).

The case 40 is a member that is supported by the main surface 11 of the substrate 10 and surrounds at least the light receiving element 32 as shown in FIGS. 2 and 5 to 7. In the present embodiment, the case 40 surrounds both the light emitting element 31 and the light receiving element 32. The case 40 has a light shielding property. Case 40 is made of, for example, ceramics or black epoxy resin. The case 40 has a top plate 41, a side wall 42, and a partition wall 43. In the present embodiment, the side wall 42 has four rectangular outer surfaces.

As shown in FIGS. 5 to 7, the top plate 41 is disposed away from the light receiving element 32 in the thickness direction z. As shown in FIGS. 1 and 2, the top plate 41 is provided with an incident opening 411 that faces the light receiving element 32 in plan view. Here, the opening portion “facing” a certain object means that the opening portion overlaps at least a part of the object in a plan view (at least a part of the object is visually recognized through the opening). The size relationship between the opening and the object does not matter (the same applies hereinafter). The top plate 41 is provided with an emission opening 412 that faces the light emitting element 31 in a plan view. The entrance opening 411 and the exit opening 412 are separated from each other in the first direction x. The shapes of the entrance opening 411 and the exit opening 412 in a plan view are circular. The incident opening 411 surrounds the first detection unit 351 and the second detection unit 352 of the light receiving element 32 in plan view. In addition, the light emission region 311 of the light emitting element 31 is located at the center of the emission opening 412 in plan view. Further, as shown in FIGS. 2 and 5 to 7, the top plate 41 is provided with at least two air vent grooves 44. The first air vent groove 44 communicates with the incident opening 411 and the outside, and the second air vent groove 44 communicates with the output opening 412 and the outside. Each air vent groove 44 is provided so as to be recessed downward from the upper surface of the top plate 41.

As shown in FIGS. 2 and 5 to 7, the side wall 42 is connected to the peripheral surface of the top plate 41 in plan view, and one end (the lower end in FIG. 5) in the thickness direction z is supported by the main surface 11 of the substrate 10. Has been. In the present embodiment, the side wall 42 of the case 40 surrounds the light emitting element 31 and the light receiving element 32. The side wall 42 has a top surface 421 facing the same direction as the main surface 11 and a bottom surface 422 facing the opposite side of the top surface 421. The bottom surface 422 is bonded to the main surface insulating film 28 via an adhesive.

As shown in FIGS. 2, 5, and 7, the partition wall 43 is located between the light emitting element 31 and the light receiving element 32 in a plan view. In the thickness direction z, one end (upper end) of the partition wall 43 is connected to the top plate 41, and the other end (lower end) is joined to the main surface insulating film 28 with an adhesive. The partition wall 43 is disposed along the second direction y in plan view. In the present embodiment, the partition 43 separates the first area 61 in which the light receiving element 32 is disposed and the second area 62 in which the light emitting element 31 is disposed.

The translucent member 50 is a translucent member, and is supported by the case 40 while being separated from the light receiving element 32 in the thickness direction z, as shown in FIGS. In the present embodiment, the translucent member 50 is supported by the top plate 41 of the case 40. The translucent member 50 is made of, for example, glass or synthetic resin. The translucent member 50 has an outer surface 51 and an inner surface 52. The outer surface 51 is a flat surface and is flush with the top surface 421 of the side wall 42 of the case 40. The inner surface 52 is a surface facing the main surface 11. The translucent member 50 is supported on the top plate 41 via the adhesive layer 59 so that the inner surface 52 faces the top plate 41 of the case 40. The adhesive layer 59 is made of, for example, an acrylic resin or an epoxy resin. The entrance opening 411 and the exit opening 412 are closed by the translucent member 50 from above. The first area 61 and the second area 62 are surrounded by the substrate 10, the case 40, and the translucent member 50. In order to protect the light receiving element 32, part or all of the first area 61 may be filled with a synthetic resin having translucency. Similarly, in order to protect the light emitting element 31 (for example, a light emitting diode), a part or all of the second area 62 may be filled with a synthetic resin having translucency. However, this is not the case when the light emitting element 31 may be damaged by filling the protective resin.

As shown in FIGS. 2 and 5 to 7, the translucent member 50 is provided with a light shielding layer 53 that does not transmit light in a wavelength band corresponding to the light emitted from the light emitting element 31. In the present embodiment, the light shielding layer 53 is an IR cut filter made of, for example, a synthetic resin. The light shielding layer 53 can be provided on the translucent member 50 by printing, for example. As shown in FIGS. 2 and 11, the light shielding layer 53 has a first opening 531 formed so as to expose a part of the translucent member 50 and to face the first detection unit 351 in plan view. In the present embodiment, as illustrated in FIG. 12, the light shielding layer 53 is in contact with the inner surface 52 of the translucent member 50. Instead of this, as shown in FIG. 13, a light shielding layer 53 may be provided so as to contact the outer surface 51 of the translucent member 50. Furthermore, as shown in FIG. 14, the first light shielding layer 53 may be provided on the outer surface 51 of the translucent member 50, and the second light shielding layer 53 may be provided on the inner surface 52 of the translucent member 50.

As shown in FIG. 15, the first opening 531 is circular. A part of the first detection unit 351 of the light receiving element 32 is located inside the first opening 531. The entire second detection unit 352 overlaps the light shielding layer 53. The entire first opening 531 is located inside the incident opening 411.

The first opening 531 may have an elliptical shape as shown in FIG. 16 or a rectangular shape as shown in FIG. Or as shown in FIG. 18, the 1st opening part 531 is good also as a shape which covered a part of circular opening. In any case, the first opening 531 is located inside the incident opening 411.

As shown in FIGS. 16 to 18, by appropriately selecting the shape of the first opening 531 in plan view, the detection accuracy (false detection) of the semiconductor device A10 with respect to the detection target located at a specific distance from the semiconductor device A10. (Suppression accuracy) can be optimized.

As shown in FIG. 19, the second detection unit 352 may have a portion overlapping the first opening 531 in plan view.

As shown in FIGS. 2, 5, and 11, the light shielding layer 53 has a second opening 532, and the second opening is separated from the first opening 531 in the first direction x. The light-transmitting member 50 is partly exposed and formed so as to face the light emitting element 31 in a plan view. The second opening 532 has a circular shape and is located inside the emission opening 412 in plan view.

Next, functions and effects of the semiconductor device A10 will be described.

For example, as shown in FIG. 20, the light L emitted from the light emitting element 31 is reflected by the upper surface of the optical window OW (boundary surface S between the optical window and external air), and the first detection unit of the light detection unit Suppose that it progressed toward 351. However, the reflected light is blocked by the light shielding layer 53 after passing through the light transmitting member 50. For this reason, the reflected light does not reach the first detection unit 351 and crosstalk does not occur. In FIG. 20, the light traveling path when the light shielding layer 53 does not exist is indicated by L ′ (two-dot chain line). In addition to the situation shown in FIG. 20, the light emitted from the light emitting element 31 may be reflected by the lower surface of the optical window OW, for example. Even in such a case, it is possible to suppress crosstalk by blocking the reflected light (noise) with the light blocking layer 53. As described above, according to the semiconductor device A10, it is possible to prevent false detection by suppressing noise and to improve detection reliability of the detection target.

In the present embodiment, the light shielding layer 53 transmits visible light (wavelength band different from infrared). For this reason, while aiming at prevention of erroneous detection of the first detection unit 351, the adjacent second detection unit 352 can have a sufficiently large light reception viewing angle, and detection by the second detection unit 352 is appropriately performed. Can be.

VCSELs have better light directivity than light emitting diodes. Therefore, if the light emitting element 31 is configured by a VCSEL, crosstalk can be more reliably suppressed, which contributes to prevention of erroneous detection of the first detection unit 351.

The top plate 41 of the case 40 is solid except for the entrance opening 411 and the exit opening 412. Since the solid part supports the translucent member 50, the translucent member 50 can be reliably fixed to the case 40, and the translucent member 50 can be prevented from being easily deformed by an external force.

The case 40 has a partition wall 43 located between the light emitting element 31 and the light detection means in plan view. One end of the partition wall 43 is connected to the top plate 41 in the thickness direction z. A region in the case 40 (region surrounded by the substrate 10, the case 40, and the translucent member 50) is divided into a first area 61 (there is a light detection means) and a second area 62 (the light emitting element 31) by the partition wall 43. ) And are separated. By providing the partition wall 43, the rigidity of the case 40 can be increased. In addition, in the semiconductor device A10, light emitted from the light emitting element 31 is prevented from reaching the first detection unit 351 of the light detection unit directly, so that erroneous detection by the first detection unit 351 is suppressed. be able to.

The light shielding member 53 has a second opening 532 formed so as to face the light emitting element 31 in a plan view. With such a configuration, it is possible to emit only light within a specific range (within a specific solid angle) out of the light emitted from the light emitting element 31 toward the detection target. This contributes to suppression of erroneous detection by the first detection unit 351.

The internal conductor 21 disposed on the main surface 11 of the substrate 10 and the external conductor 22 disposed on the back surface 12 are electrically connected to each other by an intermediate conductor 23 embedded in the substrate 10. With such a configuration, since the outer conductor 22 is not exposed to the side of the semiconductor device A10, the semiconductor device A10 can be downsized.

The inner conductor 21 (first and second inner conductors 211 and 212) and the outer conductor 22 are covered with a plating layer. With such a configuration, in manufacturing the semiconductor device A10, the internal conductor 21 is protected from an impact such as heat when the light emitting element 31 and the light receiving element 32 are mounted or when the first wire 38 and the second wire 39 are connected. Can do. Further, when the semiconductor device A10 is mounted on the circuit board, the erosion of the external conductor 22 due to the influence of cream solder or the like can be prevented.

A semiconductor device A20 according to the second embodiment of the present disclosure will be described with reference to FIGS. In these drawings, the same or similar elements as those of the semiconductor device A10 described above are denoted by the same reference numerals, and the description thereof is omitted as appropriate.

The semiconductor device A20 of the present embodiment is different from the semiconductor device A10 described above in the configuration of the case 40. In the semiconductor device A20, as shown in FIGS. 21 and 22, the case 40 is not provided with the partition wall 43. For this reason, there is one hollow region in the case 40. Further, the case 40 is not provided with an air vent groove that communicates with the emission opening 412 and the outside. There is one opening formed in the main surface insulating film 28.

Next, functions and effects of the semiconductor device A20 will be described.

In the semiconductor device A20, similarly to the semiconductor device A10 described above, the light transmissive member 50 is provided with a light shielding layer 53 that does not transmit infrared rays. The light shielding layer 53 has a first opening 531 formed so as to face the first detection unit 351 in plan view. Therefore, the function and effect described with reference to FIG. 20 can also be obtained by the semiconductor device A20. That is, it becomes possible to suppress noise and suppress false detection by the light detection means. In this embodiment, since there is no partition in the case 40, the light emitting element 31 is preferably a VCSEL rather than a light emitting diode, but the present disclosure is not limited to this.

A semiconductor device A30 according to the third embodiment of the present disclosure will be described with reference to FIGS. In these drawings, the same or similar elements as those of the semiconductor device A10 described above are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

The semiconductor device A30 of the present embodiment is different from the semiconductor device A10 described above in the configuration of the case 40 and the arrangement of the translucent member 50. In the semiconductor device A30, as shown in FIG. 23 and FIG. 24, no partition is provided in the case 40, and there is one hollow region. There is also no air vent groove communicating with the exit opening 412 and the outside. The top surface of the top plate 41 is flush with the top surface 421 of the side wall 42. The number of openings provided in the main surface insulating film 28 is one.

The translucent member 50 is supported by the top plate 41 through the adhesive layer 59 so that the outer surface 51 faces the top plate 41. The entrance opening 411 and the exit opening 412 are closed by the translucent member 50 from below. An air vent groove 44 communicating with the incident opening 411 and the outside is provided so as to be recessed from the lower surface of the top plate 41.

Next, functions and effects of the semiconductor device A30 will be described.

In the semiconductor device A30, similarly to the semiconductor device A10 described above, the light transmissive member 50 is provided with a light shielding layer 53 that does not transmit infrared light. The light shielding layer 53 has a first opening 531 formed so as to face the first detection unit 351 in plan view. Therefore, the semiconductor device A30 can also suppress noise and suppress false detection of the light detection means. Since no partition is provided in the case 40, the light emitting element 31 is preferably a VCSEL rather than a light emitting diode, but the present disclosure is not limited thereto.

A semiconductor device A40 according to the fourth embodiment of the present disclosure will be described based on FIG. 25 and FIG. In these drawings, the same or similar elements as those of the semiconductor device A10 described above are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

FIG. 25 is a plan view of the semiconductor device A40. 26 is a cross-sectional view taken along line XXVI-XXVI in FIG.

The semiconductor device A40 of this embodiment is different from the semiconductor device A10 described above in the configuration of the case 40, the translucent member 50, and the like. In the semiconductor device A 40, as shown in FIGS. 25 and 26, the top surface of the top plate 41 is flush with the top surface 421 of the side wall 42. The translucent member 50 includes a first translucent member 501 and a second translucent member 502. The first light transmissive member 501 closes the incident opening 411. The first light transmissive member 501 is provided with a light shielding layer (first light shielding layer) 53 having a first opening 531. The second light transmissive member 502 closes the emission opening 412. The second light transmitting member 502 is provided with a light shielding layer (second light shielding layer) 53 having a second opening 532. In the first direction x, the first light transmissive member 501 and the second light transmissive member 502 are separated from each other. The first light transmissive member 501 and the second light transmissive member 502 are contained in the top plate 41 and supported by the top plate 41 via the adhesive layer 59 so that the inner surface 52 faces the top plate 41. Instead of the illustrated example, the light-shielding layer 53 may not be provided on the second light-transmissive member 502.

Next, functions and effects of the semiconductor device A40 will be described.

In the semiconductor device A40, at least the first light-transmissive member 501 is provided with a light-shielding layer 53 that does not transmit infrared rays. The light-shielding layer 53 is formed so as to face the first detection unit 351 in plan view. An opening 531 is provided. Therefore, the semiconductor device A40 can also suppress noise and prevent erroneous detection of the light detection means.

A semiconductor device A50 according to the fifth embodiment of the present disclosure will be described with reference to FIGS. In these drawings, the same or similar elements as those of the semiconductor device A10 described above are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

The semiconductor device A50 of this embodiment is different from the semiconductor device A10 described above in the configuration of the case 40, the translucent member 50, and the like. In the semiconductor device A50, as shown in FIGS. 27 and 28, the top surface of the top plate 41 is flush with the top surface 421 of the side wall. The translucent member 50 includes the first translucent member 501 and the second translucent member 502 as in the semiconductor device A40 described above. In the first direction x, the first light transmissive member 501 and the second light transmissive member 502 are separated from each other. The first light transmissive member 501 and the second light transmissive member 502 are supported by the top plate 41 through the adhesive layer 59 so that the outer surface 51 faces the top plate 41. The second light transmissive member 502 may not include the light shielding layer 53.

Next, functions and effects of the semiconductor device A50 will be described.

In the semiconductor device A50, at least the first light transmitting member 501 is provided with a light shielding layer 53 that does not transmit infrared rays. The light shielding layer 53 is formed so as to face the first detection unit 351 in plan view. An opening 531 is provided. Therefore, also with the semiconductor device A50, it is possible to suppress noise and suppress erroneous detection of the light detection means.

A semiconductor device B10 according to the sixth embodiment of the present disclosure will be described with reference to FIGS. The semiconductor device B10 includes a substrate 10, a light emitting element 31, a light receiving element 32, a case 40, and a translucent member 50. A plurality of inner conductors 21, a plurality of outer conductors 22, a plurality of intermediate conductors 23, a main surface insulating film 28 and a back surface insulating film 29 are arranged on the substrate 10. 29 and 30, the translucent member 50 is indicated by a two-dot chain line. FIG. 31 is a plan view of the semiconductor device B10, and the case 40 and the translucent member 50 are omitted.

The substrate 10 is a member on which the light emitting element 31 and the light receiving element 32 are mounted and the semiconductor device B10 is mounted on the circuit board as shown in FIGS. The substrate 10 is an electrical insulator and is made of, for example, a glass epoxy resin. The shape of the substrate 10 in plan view is a rectangular shape having the first direction x as a long side. The substrate 10 has a main surface 11 and a back surface 12. The substrate 10 is provided with a plurality of through holes 13 extending in the thickness direction z (see FIG. 34). In each through hole 13, an intermediate conductor 23 is disposed so as to fill the through hole 13.

33, the main surface 11 and the back surface 12 face each other in the thickness direction z. As shown in FIG. 31 and FIG. 32, the main surface 11 and the back surface 12 are both flat in shape when viewed from above, with the long side in the first direction x. On the main surface 11, the inner conductor 21 and the main surface insulating film 28 are disposed, and the light emitting element 31 and the light receiving element 32 are mounted. Case 40 is supported by main surface 11. The back surface 12 is a surface facing the wiring board or the like when the semiconductor device B10 is mounted. As shown in FIG. 32, the external conductor 22 and the back surface insulating film 29 are disposed on the back surface 12.

The inner conductor 21 is made of Cu, for example. As shown in FIG. 31, the internal conductor 21 includes a first internal conductor 211 that is conductive to the light emitting element 31 and a plurality of second internal conductors 212 that are conductive to the light receiving element 32. The first inner conductor 211 and the second inner conductor 212 are separated from each other with the partition wall 43 of the case 40 as a boundary (see FIG. 33). Each of the inner conductors 21 is covered with a plating layer. The plating layer is composed of, for example, a Ni layer and an Au layer stacked on each other.

As shown in FIGS. 31, 33, and 35, the first inner conductor 211 has a first pad portion 211a and a die pad portion that is spaced apart from the first pad portion 211a in the second direction y and mounts the light emitting element 31. 211b. A first wire 38 is connected to the first pad portion 211a. The first pad portion 211 a is electrically connected to the light emitting element 31 through the first wire 38. The die pad portion 211 b is electrically connected to the light emitting element 31 through the first bonding layer 33. The first pad portion 211a and the die pad portion 211b are electrically connected to the intermediate conductor 23, respectively.

As shown in FIGS. 31, 33 and 34, a second pad portion 212a having a rectangular shape in plan view is provided at the tip of each second inner conductor 212. Each of the second pad portions 212a is arranged along the second direction y. A second wire 39 is connected to each second pad portion 212 a, and the second inner conductor 212 is electrically connected to the light receiving element 32 via the second wire 39. The second inner conductors 212 are electrically connected to the intermediate conductor 23, respectively.

The main surface insulating film 28 is an electrical insulating member that partially covers the first inner conductor 211 and the second inner conductor 212 as shown in FIGS. 31 and 33 to 35. The main surface insulating film 28 is, for example, a solder resist film. A first opening 281 and a second opening 282 are formed in the main surface insulating film 28. In plan view, both the light emitting element 31 and the first wire 38 are surrounded by the first opening 281. A second pad portion 212 a that is a part of the second inner conductor 212 is exposed from the second opening 282.

Each outer conductor 22 is electrically connected to the light emitting element 31 or the light receiving element 32 through the intermediate conductor 23 and the inner conductor 21 as shown in FIGS. 32, 34 and 35. Each outer conductor 22 is electrically connected to one of the first inner conductor 211 and the second inner conductor 212 via the intermediate conductor 23. The outer conductor 22 and the intermediate conductor 23 are made of the same material (for example, Cu) as the inner conductor 21. The outer conductor 22 is covered with a plating layer in the same manner as the inner conductor 21. The plating layer is composed of, for example, a Ni layer and an Au layer stacked on each other.

The back surface insulating film 29 is an electrical insulating member that covers a part of the outer conductor 22 as shown in FIGS. The back surface insulating film 29 is, for example, a solder resist film, like the main surface insulating film 28. When the semiconductor device B10 is mounted on the circuit board, the external conductor 22 exposed from the back surface insulating film 29 is electrically connected to the wiring pattern formed on the circuit board via cream solder or the like.

The light emitting element 31 is a semiconductor element that emits light. For example, the light emitting element 31 is a VCSEL that emits laser light. Instead of this, the light emitting element 31 may be a light emitting diode emitting infrared rays. As shown in FIGS. 30 and 31, a light emitting region 311 that emits light in the thickness direction z and an upper surface electrode 312 to which the first wire 38 is connected are provided on the upper surface of the light emitting element 31. . The light emitting element 31 is electrically connected to the first pad portion 211 a of the first inner conductor 211 via the first wire 38. A lower surface electrode 313 is provided on the lower surface of the light emitting element 31, and the light emitting element 31 is electrically connected to the die pad portion 211 b of the internal conductor 21 through the first bonding layer 33. The configuration of the VCSEL used as the light emitting element 31 is the same as the configuration described with reference to FIGS. 8 and 9, for example.

The first bonding layer 33 is a conductive member interposed between the lower surface electrode 313 of the light emitting element 31 and the die pad portion 211b of the first inner conductor 211, as shown in FIGS. The light emitting element 31 is mounted on a die pad portion 211b disposed on the main surface 11 by die bonding. The first bonding layer 33 is made of, for example, Ag paste (epoxy resin containing Ag).

As shown in FIGS. 31 and 33, the light receiving element 32 is a semiconductor element that is supported by the main surface 11 and spaced from the light emitting element 31 in the first direction x and detects light emitted from the light emitting element 31. . The light receiving element 32 is formed of, for example, an integrated circuit (IC), and includes a plurality of electrode pads 321 and a detection unit 350, a functional region 322, and a laminated optical film 324 as shown in FIG.

The detection unit 350 is a part that detects light that is emitted from the light emitting element 31 and then reflected by the detection target, and is configured by, for example, a photodiode. When detecting the light, the detecting unit 350 outputs a voltage due to the photovoltaic effect. Each electrode pad 321 is made of, for example, Al, and is electrically connected to the detection unit 350 or the functional region 322. As shown in FIG. 31, each electrode pad 321 is electrically connected to the second inner conductor 212 via the second wire 39. The functional area 322 is electrically connected to the detection unit 350. As an example, the functional area 322 outputs a proximity signal indicating the proximity of the detection target based on the output voltage from the detection unit 350. More specifically, the functional area 322 outputs a proximity signal to the outside of the semiconductor device B10 when the output voltage exceeds a preset threshold value.

The laminated optical film 324 is made of a synthetic resin that transmits only light in a wavelength range corresponding to the light emitted from the light emitting element 31. In the light receiving element 32, the laminated optical film 324 covers the detection unit 350 and the functional region 322. For this reason, the detection unit 350 and the functional region 322 are not affected by light in a wavelength region different from the light emitted from the light emitting element 31 such as visible light.

The second bonding layer 34 is an electrically insulating member interposed between the light receiving element 32 and the back surface insulating film 29 as shown in FIGS. 33 and 34. The light receiving element 32 is fixed to the main surface 11 of the substrate 10 by the second bonding layer 34. The second bonding layer 34 is made of, for example, an epoxy resin or polyimide.

The first wire 38 is a conductive member that connects the upper surface electrode 312 of the light emitting element 31 and the first pad portion 211a of the first internal conductor 211, as shown in FIG. In the present embodiment, the first wire 38 is disposed along the second direction y. Each second wire 39 connects the electrode pad 321 of the light receiving element 32 and the second pad portion 212 a of the second inner conductor 212. In the present embodiment, the plurality of second wires 39 are all arranged between the light emitting element 31 and the light receiving element 32 in the first direction x and along one side of the light receiving element 32 in plan view. The second wires 39 may be arranged along two sides of the light receiving element 32 (for example, two sides separated from each other in the first direction x), or may be arranged along four sides of the light receiving element 32. The first wire 38 and the second wire 39 are made of the same material (for example, Au).

The case 40 is a member that is supported by the main surface 11 of the substrate 10 and surrounds at least the light emitting element 31 as shown in FIG. In the present embodiment, the case 40 surrounds both the light emitting element 31 and the light receiving element 32. Case 40 is made of a light-insulating electrical insulating member (for example, ceramics or black epoxy resin). The case 40 has a top plate 41, a side wall 42, and a partition wall 43.

As shown in FIG. 30 and FIGS. 33 to 35, the top plate 41 is disposed away from the light emitting element 31 and the light receiving element 32 in the thickness direction z. The top plate 41 is provided with an emission opening 412 facing the light emitting element 31 and an incident opening 411 facing the light receiving element 32 in plan view. The exit opening 412 and the entrance opening 411 are separated from each other in the first direction x. The shapes of the exit opening 412 and the entrance opening 411 in plan view are both circular. In plan view, the light emission region 311 of the light emitting element 31 is located at the center of the emission opening 412. Further, the incident opening 411 surrounds the detection unit 350 of the light receiving element 32 in plan view. The top plate 41 is provided with an air vent groove 44 that communicates with the incident opening 411 and the outside. The air vent groove 44 is provided so as to be recessed from the upper surface of the top plate 41.

30 and FIGS. 33 to 35, the side wall 42 is connected to the peripheral surface of the top plate 41 in plan view, and one end in the thickness direction z is supported by the main surface 11 of the substrate 10. The side wall 42 has a top surface 421 facing the same direction as the main surface 11 and a bottom surface 422 facing the opposite side of the top surface 421. The bottom surface 422 is bonded to the main surface insulating film 28 via an adhesive.

The partition wall 43 is located between the light emitting element 31 and the light receiving element 32 in a plan view, and one end (upper end in FIG. 33) is connected to the top plate 41 in the thickness direction z. The other end (lower end) of the partition wall 43 is bonded to the main surface insulating film 28 via an adhesive. The partition wall 43 is disposed along the second direction y in plan view (see FIG. 30). In the present embodiment, the space in the case 40 is separated by a partition wall 43 into a first area 61 where the light receiving element 32 exists and a second area 62 where the light emitting element 31 exists.

The translucent member 50 is a member that is supported by the case 40 while being spaced apart from the light emitting element 31 in the thickness direction z and transmits light emitted from the light emitting element 31, as shown in FIGS. In the present embodiment, the translucent member 50 is supported by the top plate 41 of the case 40. The translucent member 50 is made of, for example, glass. The translucent member 50 has an outer surface 51 and an inner surface 52. The outer surface 51 is a surface facing in the same direction as the main surface 11 of the substrate 10. In the present embodiment, the outer surface 51 is a flat surface and is flush with the top surface 421 of the side wall 42 of the case 40. The inner surface 52 faces away from the outer surface 51 and faces the main surface 11. In the present embodiment, the translucent member 50 is supported by the top plate 41 via the adhesive layer 59 so that the inner surface 52 faces the top plate 41 of the case 40. The adhesive layer 59 is made of, for example, an acrylic resin or an epoxy resin. Further, the exit opening 412 and the entrance opening 411 are closed by the translucent member 50 from above.

33 and FIGS. 35 to 37, the translucent member 50 is provided with a refracting portion 54. As shown in FIG. The refracting unit 54 is configured to refract the light emitted from the light emitting element 31 in a direction away from the light receiving element 32 in the first direction x (see FIG. 41). In the present embodiment, the refracting portion 54 is provided so as to be recessed from the inner surface 52. The refracting portion 54 has a side surface 541 and an inclined surface 542. The side surface 541 has one end connected to the inner surface 52 in the thickness direction z and the other end connected to the inclined surface 542. The side surface 541 is disposed along the thickness direction z (FIG. 37). The inclined surface 542 has one end in the thickness direction z connected to the side surface 541 and the other end connected to the inner surface 52. The inclined surface 542 is inclined so as to move away from the light emitting element 31 in the thickness direction z as it approaches the light receiving element 32 in the first direction x. As shown in FIG. 36, the refracting portion 54 is provided over the entire section of the translucent member 50 in the second direction y. The cross-sectional shape (FIG. 37) of the refracting portion 54 along the first direction x is uniform in the second direction y.

The refracting portion 54 can have a configuration different from the configurations shown in FIGS. FIG. 38 is an enlarged cross-sectional view of a refracting portion 54 of a semiconductor device B11 that is a first modification of the semiconductor device B10. As shown in FIG. 38, the refracting portion 54 of the semiconductor device B11 is provided so as to protrude from the inner surface 52 toward the main surface 11 of the substrate 10. The refracting portion 54 is included in the exit opening 412. For this reason, the refracting portion 54 is provided only in a partial section of the translucent member 50 in the second direction y. The outer surface 51 is flat. In the present modification, an air vent groove 44 that communicates with the emission opening 412 and the outside is provided so as to be recessed from the top surface of the top plate 41.

FIG. 39 is an enlarged cross-sectional view of a refracting portion 54 of a semiconductor device B12 that is a second modification of the semiconductor device B10. As shown in FIG. 39, the refracting portion 54 of the semiconductor device B12 protrudes outward from the outer surface 51. The inclined surface 542 of the refracting portion 54 approaches the light emitting element 31 in the thickness direction z as it approaches the light receiving element 32 in the first direction x. The refracting portion 54 may be provided so as to be recessed from the outer surface 51 toward the main surface 11. Further, the refracting portion 54 extends over the entire section of the translucent member 50 in the second direction y, similarly to the semiconductor device B10. In this case, the inner surface 52 is flat. In the present modification, an air vent groove 44 that communicates with the emission opening 412 and the outside is provided so as to be recessed from the upper surface of the top plate 41, as in the semiconductor device B11.

Next, functions and effects of the semiconductor device B10 will be described.

As described above, the semiconductor device B10 includes the substrate 10, the light emitting element 31 and the light receiving element 32 supported by the substrate 10, the case 40 surrounding at least the light emitting element 31 and supported by the substrate 10, and the case 40 supporting the semiconductor device B10. The translucent member 50 is provided. A hollow region surrounded by the substrate 10, the case 40, and the translucent member 50 is divided into a first area 61 (the light receiving element 32 exists) and a second area 62 (the light emitting element 31 exists) by the partition wall 43. Yes. The translucent member 50 is provided with a refracting portion 54.

As shown in the cross-sectional view of FIG. 41, when the light emitted from the light emitting element 31 is incident on the refracting portion 54, the light on the surface of the refracting portion 54 (the boundary between the refracting portion 54 and the air) is shifted to the right (first) Refracted in a direction x away from the light receiving element 32). In the example shown in FIG. 41, the light is refracted to the right in the traveling direction even when it is emitted from the refracting portion 54. As described above, the light L emitted from the light emitting element 31 is refracted in the direction away from the light receiving element 32 (detection unit 350) in the first direction x when passing through the refraction unit 54.

In the example of FIG. 41, the light immediately after being emitted from the light emitting element 31 is drawn to travel along the thickness direction z, but actually travels at an angle inclined with respect to the thickness direction z. There is also light. For example, in FIG. 41, there is also light that travels while being inclined to the left with respect to the thickness direction z (see FIG. 20). Even such light is refracted rightward in the traveling direction (that is, the direction away from the light receiving element 32 in the first direction x) at least when entering the refracting portion 54. As a result, even if the light is reflected by the boundary surface S between the optical window OW and the outside (not the detection object), the reflected light (noise) reaches the detection unit 350 of the light receiving element 32. It can be avoided.

By making the light emitting element 31 a VCSEL, the directivity of light emitted from the light emitting element 31 can be improved rather than the light emitting diode. This contributes to suppressing crosstalk. The second area 62 is hollow. The VCSEL is a semiconductor element that is weak against external force. When the light emitting element 31 is a VCSEL, it is preferable that the second area 62 is hollow because no external force acts on the light emitting element 31.

The case 40 surrounds at least the light emitting element 31 and has a top plate 41 that is disposed away from the light emitting element 31 in the thickness direction z. The top plate 41 is provided with an emission opening 412 that faces the light emitting element 31 in plan view. The translucent member 50 closes the emission opening 412 and is supported by the top plate 41. With such a configuration, the translucent member 50 is firmly supported by the case 40, and deformation of the translucent member 50 due to an external force or the like can be suppressed.

The case 40 has a partition wall 43 located between the light emitting element 31 and the light receiving element 32 in a plan view and having one end connected to the top plate 41 in the thickness direction z. With such a configuration, the rigidity of the case 40 can be improved. In addition, since light emitted from the light emitting element 31 directly reaches the detection unit 350 of the light receiving element 32 inside the semiconductor device B10, erroneous detection by the light receiving element 32 can be suppressed.

The internal conductor 21 disposed on the main surface 11 of the substrate 10 and the external conductor 22 disposed on the back surface 12 are electrically connected to each other by an intermediate conductor 23 embedded in the substrate 10. With such a configuration, since the outer conductor 22 is not exposed to the side of the semiconductor device B10, the semiconductor device B10 can be downsized.

The inner conductor 21 (the first inner conductor 211 and the second inner conductor 212) and the outer conductor 22 are both covered with a plating layer. With such a configuration, in manufacturing the semiconductor device B10, the internal conductor 21 is protected from an impact such as heat when the light emitting element 31 and the light receiving element 32 are mounted or when the first wire 38 and the second wire 39 are connected. Can do. Further, when the semiconductor device B10 is mounted on the circuit board, the erosion of the external conductor 22 due to the influence of cream solder or the like can be prevented.

A semiconductor device B20 based on the seventh embodiment of the present disclosure will be described based on FIGS. In these drawings, the same or similar elements as those of the semiconductor device B10 described above are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

FIG. 42 is a plan view of the semiconductor device B20, and the translucent member 50 is indicated by a two-dot chain line. 43 is a cross-sectional view taken along line XLIII-XLIII in FIG.

The semiconductor device B20 of the present embodiment is different from the semiconductor device B10 described above in the configuration of the case 40. In the semiconductor device B20, as shown in FIG. 43, no partition is provided in the case 40. For this reason, the inside of the case 40 forms one hollow region. The main surface insulating film 28 disposed on the main surface 11 has only one opening.

Similar to the semiconductor device B10 described above, the light transmissive member 50 of the semiconductor device B20 is provided with a refracting unit 54 that refracts the light emitted from the light emitting element 31 so as to be away from the light receiving element 32 in the first direction x. Yes. Therefore, the semiconductor device B20 can suppress the crosstalk similarly to the semiconductor device B10.

44 and 45, the semiconductor device B30 according to the eighth embodiment of the present disclosure will be described. In these drawings, the same or similar elements as those of the semiconductor device B10 described above are denoted by the same reference numerals, and description thereof will be omitted as appropriate.

The semiconductor device B30 of the present embodiment is different from the semiconductor device B10 described above in the configuration of the case 40 and the arrangement form of the translucent member 50. In the semiconductor device B30, as shown in FIG. 45, no partition is provided in the case 40. Further, the main surface insulating film 28 disposed on the main surface 11 has one opening. The top surface of the top plate 41 is flush with the top surface 421 of the side wall 42. The translucent member 50 is fixed to the top plate 41 via an adhesive layer 59 so that the outer surface 51 faces the top plate 41. Further, both the exit opening 412 and the entrance opening 411 are closed by the translucent member 50 from below. An air vent groove 44 communicating with the incident opening 411 and the outside is provided so as to be recessed from the lower surface of the top plate 41. Also in the semiconductor device B30, the refracting portion 54 can suppress crosstalk.

A semiconductor device B40 according to the ninth embodiment of the present disclosure will be described based on FIGS. In these drawings, the same or similar elements as those of the semiconductor device B10 described above are denoted by the same reference numerals, and description thereof will be omitted as appropriate. FIG. 46 is a plan view of the semiconductor device B40, and the translucent member 50 is indicated by a two-dot chain line. FIG. 47 is a sectional view taken along line XLVII-XLVII in FIG.

The semiconductor device B40 is different from the semiconductor device B10 described above in the configuration of the case 40, the translucent member 50, and the like. In the semiconductor device B40, as shown in FIG. 47, the top surface of the top plate 41 is flush with the top surface 421 of the side wall. In the present embodiment, two members, a first light transmitting member 501 and a second light transmitting member 502, are used corresponding to the light transmitting member 50. The first light transmissive member 501 closes the incident opening 411. The second light transmissive member 502 closes the emission opening 412 and is provided with a refracting portion 54. In the first direction x, the first light transmissive member 501 and the second light transmissive member 502 are separated from each other. The outer surfaces 51 of the first light transmitting member 501 and the second light transmitting member 502 are flush with the upper surface of the top plate 41. In other words, each of the

translucent members

501 and 502 is embedded in the top plate 41 as a whole. The inner surface 52 of each of the

translucent members

501 and 502 is fixed to the top plate 41 via an adhesive layer 59 so as to face the top plate 41. Also in the semiconductor device B40, the second light transmitting member 502 is provided with the refracting portion 54, whereby crosstalk can be suppressed.

For example, the semiconductor devices according to the above-described Embodiments B10 to B40 can be defined as an appendix as follows.

Appendix 1. A substrate having a main surface and a back surface;
A light emitting element mounted on the main surface;
A light receiving element mounted on the main surface at a distance from the light emitting element in a first direction, the light receiving element having a detection unit for detecting light emitted from the light emitting element;
A case surrounding the light emitting element and supported by the main surface;
A translucent member that is spaced apart from the light emitting element and supported by the case in the thickness direction of the substrate,
The semiconductor device, wherein the light transmissive member is provided with a refracting portion that refracts light emitted from the light emitting element in a direction away from the light receiving element in the first direction.

Appendix 2. The translucent member has an outer surface facing the same direction as the main surface, and an inner surface facing the main surface,
The refracting portion has an inclined surface provided on the inner surface, and the inclined surface is configured to move away from the light emitting element in the thickness direction as it approaches the light receiving element in the first direction. The semiconductor device according to appendix 1.

Appendix 3. The semiconductor device according to attachment 2, wherein the refracting portion is provided so as to be recessed from the inner surface.

Appendix 4. The semiconductor device according to appendix 2, wherein the refracting portion is provided so as to protrude from the inner surface toward the main surface.

Appendix 5. The semiconductor device according to any one of appendices 2 to 4, wherein the outer surface is a flat surface.

Appendix 6. The translucent member has an outer surface facing the same direction as the main surface, and an inner surface facing the main surface,
The refracting portion has an inclined surface provided on the outer surface, and the inclined surface is configured to approach the light emitting element in the thickness direction as it approaches the light receiving element in the first direction. The semiconductor device according to appendix 1.

Appendix 7. The case has a top plate and a side wall, and the top plate is disposed apart from the light emitting element in the thickness direction, and the side wall of the top plate is viewed in the thickness direction of the substrate. Connected to the peripheral surface, and one end in the thickness direction is supported by the main surface,
The top plate is provided with an emission opening facing the light emitting element in the thickness direction view,
The semiconductor device according to any one of appendices 2 to 6, wherein the translucent member closes the emission opening and is supported by the top plate.

Appendix 8. The semiconductor device according to appendix 7, wherein the inner surface of the translucent member faces the top plate.

Appendix 9. The semiconductor device according to appendix 7, wherein the outer surface of the translucent member faces the top plate.

Appendix 10. The side wall surrounds the light emitting element and the light receiving element;
The top plate is provided with an incident opening that is spaced apart from the emission opening in the first direction and faces the light receiving element in the thickness direction view,
The semiconductor device according to appendix 8 or 9, wherein the translucent member blocks the incident opening.

Appendix 11. The case includes a partition located between the light emitting element and the light receiving element in the thickness direction view, and the partition has one end connected to the top plate in the thickness direction,
The semiconductor device according to appendix 10, wherein the light emitting element and the light receiving element are separated from each other by the partition wall.

Appendix 12. The translucent member includes a first translucent member that closes the incident opening, and a second translucent member that closes the exit opening, and the refracting portion is provided in the second translucent member. ,
The semiconductor device according to

appendix

10 or 11, wherein the first light transmissive member and the second light transmissive member are separated from each other in the first direction.

Appendix 13. 11. The semiconductor device according to any one of appendices 1 to 10, wherein the light emitting element is a VCSEL.

Appendix 14. In the configuration further comprising the first inner conductor, the second inner conductor and the outer conductor,
The first inner conductor and the second inner conductor are provided on the main surface, and are electrically connected to the light emitting element and the light receiving element, respectively.
14. The semiconductor device according to any one of appendices 1 to 13, wherein the outer conductor is provided on the back surface and is electrically connected to one of the first inner conductor and the second inner conductor.

Appendix 15. The semiconductor device according to appendix 14, wherein the first inner conductor, the second inner conductor, and the outer conductor are all covered with a plating layer.

Appendix 16. In the configuration further comprising an intermediate conductor,
The substrate is formed with a through hole from the main surface to the back surface where the intermediate conductor is disposed,
The semiconductor device according to appendix 14 or 15, wherein the intermediate conductor connects the outer conductor to one of the first inner conductor and the second inner conductor.

APPENDIX 17 The semiconductor device according to any one of appendices 14 to 16, wherein the light receiving element is an integrated circuit, and the detection unit is a photodiode.

Although various embodiments have been specifically described above with reference to the drawings, these are merely examples, and the present disclosure is not limited to the above-described embodiments. The specific configuration of each part according to the present disclosure can be varied in design in various ways.

Claims

A substrate having a main surface and a back surface;
A light emitting element mounted on the main surface;
A light detecting means mounted on the main surface at a distance from the light emitting element, the light detecting means having a first detection unit for detecting light emitted from the light emitting element;
A case surrounding the light detection means and supported by the main surface;
A translucent member having an inner surface facing the main surface side and an outer surface facing the side opposite to the inner surface, the translucent member being supported by the case spaced apart from the light detection means in the thickness direction of the substrate When,
A light shielding layer provided on the light transmissive member, the light shielding layer that does not transmit light in a wavelength band corresponding to light emitted from the light emitting element;
With
The semiconductor device, wherein the light-shielding layer is formed with a first opening facing the first detection unit when viewed in the thickness direction of the substrate.
The semiconductor device according to claim 1, wherein the light shielding layer is provided on the inner surface of the translucent member.
The semiconductor device according to claim 1, wherein the light shielding layer is provided on the outer surface of the translucent member.
The light detection means includes a second detection unit that detects light in a wavelength band different from the light detected by the first detection unit,
4. The semiconductor device according to claim 1, wherein the second detection unit overlaps the light shielding layer when viewed in the thickness direction.
The light detection means includes a second detection unit that detects light in a wavelength band different from the light detected by the first detection unit,
The semiconductor device according to any one of claims 1 to 3, wherein the second detection unit includes a portion that overlaps the first opening when viewed in the thickness direction.
The case includes a top plate and a side wall, the top plate is separated from the light detection means in the thickness direction, and the side wall is connected to a peripheral surface of the top plate in the thickness direction view, And supported by the main surface,
The top plate is provided with an incident opening facing the light detection means in the thickness direction view,
The translucent member closes the incident opening and is supported by the top plate,
6. The semiconductor device according to claim 1, wherein the first opening is located inside the incident opening in the thickness direction view.
The semiconductor device according to claim 6, wherein the translucent member has the inner surface facing the top plate.
The semiconductor device according to claim 6, wherein the translucent member has the outer surface facing the top plate.
The side wall surrounds the light emitting element and the light detection means;
The top plate is provided with an exit opening spaced from the entrance opening and facing the light emitting element in the thickness direction view,
The semiconductor device according to claim 7, wherein the translucent member closes the emission opening.
The case includes a partition wall positioned between the light emitting element and the light detection means in the thickness direction view, and the partition wall has one end connected to the top plate in the thickness direction,
The region surrounded by the substrate, the case, and the translucent member is separated by the partition into a first area where the light detection means exists and a second area where the light emitting element exists. The semiconductor device described.
The translucent member includes a first translucent member that closes the incident opening, and a second translucent member that closes the emission opening, and the first translucent member has the first opening. The semiconductor device according to claim 9, wherein the light shielding layer is provided.
The light shielding layer has a second opening that is spaced apart from the first opening, and the second opening exposes a part of the translucent member and allows the light emitting element to be viewed in the thickness direction. It is formed to face,
The semiconductor device according to claim 9, wherein the second opening is positioned inside the emission opening in the thickness direction view.
The translucent member includes a first translucent member that closes the incident opening and a second translucent member that closes the exit opening, and the light shielding layer includes a first light shielding layer having the first opening. And a second light shielding layer having the second opening, wherein the first light transmissive member is provided with the first light shielding layer, and the second light transmissive member is provided with the second light shielding layer. The semiconductor device according to claim 12.
14. The semiconductor device according to claim 9, wherein a region surrounded by the substrate, the case, and the translucent member has a hollow portion.
In the configuration further comprising an inner conductor and an outer conductor,
The inner conductor is disposed on the main surface and is conducted to either the light emitting element or the light detecting means.
The semiconductor device according to any one of claims 1 to 14, wherein the outer conductor is disposed on the back surface and is electrically connected to the inner conductor.
The semiconductor device according to claim 15, wherein the inner conductor and the outer conductor are both covered with a plating layer.
In the configuration further comprising an intermediate conductor,
The substrate is provided with a through hole extending from the main surface to the back surface, and the intermediate conductor is disposed in the through hole and connected to both the inner conductor and the outer conductor. Item 15. The semiconductor device according to Item 15 or 16.