JPS58199573A - Semiconductor device - Google Patents
Semiconductor deviceInfo
- Publication number
- JPS58199573A JPS58199573A JP57081449A JP8144982A JPS58199573A JP S58199573 A JPS58199573 A JP S58199573A JP 57081449 A JP57081449 A JP 57081449A JP 8144982 A JP8144982 A JP 8144982A JP S58199573 A JPS58199573 A JP S58199573A
- Authority
- JP
- Japan
- Prior art keywords
- submount
- emitting element
- light emitting
- stem
- light
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 20
- 239000002344 surface layer Substances 0.000 claims description 2
- 239000011521 glass Substances 0.000 abstract description 4
- 229910052751 metal Inorganic materials 0.000 abstract description 4
- 239000002184 metal Substances 0.000 abstract description 4
- 239000000758 substrate Substances 0.000 abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 239000010410 layer Substances 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 239000012212 insulator Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/12—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof structurally associated with, e.g. formed in or on a common substrate with, one or more electric light sources, e.g. electroluminescent light sources, and electrically or optically coupled thereto
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体装置、特に発光素子と受光素子を組み込
んだ半導体装置であって、発光素子から発光した光の障
害物面における反射光を受光素子で受光するセンサー用
半導体装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device, particularly a semiconductor device incorporating a light emitting element and a light receiving element, and a semiconductor device for a sensor in which the light emitted from the light emitting element is reflected on an obstacle surface by the light receiving element. Regarding equipment.
測距機等のセンサー用半導体装置は、光を発光する発光
素子、反射光を受光する受光素子を有しているが、従来
、これらの素子はそれぞれ個別のサブマウンｌ−に取り
付けた後、再び単一のステムに固定する構造となってい
る。Semiconductor devices for sensors such as rangefinders have a light-emitting element that emits light and a light-receiving element that receives reflected light. Conventionally, these elements are mounted on individual sub-mounts and then re-assembled. It has a structure that is fixed to a single stem.
しかし、このような構造では各素子をそれぞれのサブマ
ウントに取り付ける作業、これらサブマウントをステム
に取り付ける作業等、取付作業回数が多い難点があると
ともに、ステムの所定位置に正確に両サブマウントを固
定しないと両累子の位置関係がずれてしまい、センサー
機能が低下してしまう欠点がある。このため、位置決め
作業に時間を要し作業工数が多くなり生産コストが高く
なる。However, this structure has the disadvantage that it requires a lot of mounting work, such as mounting each element to its own submount, and mounting these submounts to the stem.In addition, it is difficult to accurately fix both submounts in the specified position on the stem. Otherwise, the positional relationship between the two resistors will shift, resulting in a disadvantage that the sensor function will deteriorate. For this reason, positioning work takes time, increases the number of work steps, and increases production costs.
したがって、本発明の目的は発光素子と受光素子の位置
関係を高精度に組み立て易い構造の半導体装置を提供す
ることにある。SUMMARY OF THE INVENTION Therefore, an object of the present invention is to provide a semiconductor device having a structure in which the positional relationship between a light emitting element and a light receiving element can be easily assembled with high accuracy.
また、本発明の他の目的は、組立工数が低い生産コスト
の安い半導体装置を提供することにある。Another object of the present invention is to provide a semiconductor device with low assembly man-hours and low production costs.
このような目的を達成するために本発明は、発光素子と
、この発光素子から発光した光の障害物面での反射光を
受光する受光素子とを有する半導体装置において、前記
発光素子は表層部の一部に直接受光素子を形成した半導
体からなるサブマウント上に絶縁的に取り付けられると
ともに、このサブマウントはステムに固定されてなるも
のであって、以下実施例により本発明を説明する。In order to achieve such an object, the present invention provides a semiconductor device including a light emitting element and a light receiving element that receives light emitted from the light emitting element and reflected from an obstacle surface, wherein the light emitting element has a surface layer. This invention is insulatively mounted on a submount made of a semiconductor on which a light receiving element is directly formed on a part of the stem, and this submount is fixed to a stem.The present invention will be explained below using examples.
第１図は本発明の一実施例による光センサー用半導体装
置を示す断面図、第２図は同じ（サブマウントを取り付
けたステムの平面図である。FIG. 1 is a sectional view showing a semiconductor device for an optical sensor according to an embodiment of the present invention, and FIG. 2 is a plan view of the same (a stem with a submount attached).
この半導体装置は金属製のステム１の上面中央にはサブ
マウント２が導電付接着材３を介して固定されている。In this semiconductor device, a submount 2 is fixed to the center of the upper surface of a metal stem 1 via a conductive adhesive 3.
サブマウント２は特に限定はされないがＮ導電型のシリ
コン基板４からなるどともに、下面５の一部にはＰ導電
型領域６が形成され、受光素子用のＰＮ接合７を形作っ
ている。また、サブマウント２の工面は、Ｐ４ｔｆｆ領
域６上にアルミニウムによっ１部分的に形成される受光
素子のアノード用コンタクト部８を除いて絶縁膜９で被
われている。アノード用コンタクト部８の一部は絶縁膜
９上に延在するとともに、その先端は受光素子用アノー
ドボンディングバッド１０となっている。Although not particularly limited, the submount 2 is made of an N conductivity type silicon substrate 4, and a P conductivity type region 6 is formed in a part of the lower surface 5, forming a PN junction 7 for a light receiving element. Further, the cut surface of the submount 2 is covered with an insulating film 9 except for the anode contact portion 8 of the light receiving element which is partially formed of aluminum on the P4tff region 6. A portion of the anode contact portion 8 extends over the insulating film 9, and its tip serves as an anode bonding pad 10 for a light receiving element.
一方、ステム１には４本の導電性のリードが取り付ゆら
れている。３本のリードはステム１を貫通するとともに
、絶縁体１１を介して固定され、受光素子用アノードリ
ード１２１発光素子用アノードリード１３２発光累子用
カソードリード１４を形作っている。また、残りの一本
のリードはステム１の下面にその上端を固定され、サブ
マウント２ＯＮ導電型のシリコン基板４と導通する受光
素子用カソードリード１５を形作っている。そして、前
記受光素子用アノードボンディングバッド１０と受光素
子用アノードリード１２の上端とは導酬（ワイヤ）１６
で接続されている。On the other hand, four conductive leads are attached to the stem 1. The three leads pass through the stem 1 and are fixed via an insulator 11, forming an anode lead 121 for a light receiving element, an anode lead 132 for a light emitting element, and a cathode lead 14 for a light emitting element. The upper end of the remaining lead is fixed to the lower surface of the stem 1, forming a cathode lead 15 for a light receiving element that is electrically connected to the silicon substrate 4 of the submount 2ON conductivity type. The upper ends of the anode bonding pad 10 for the light-receiving element and the anode lead 12 for the light-receiving element are connected to a wire 16.
connected with.
他方、サブマウント２の平坦な絶縁膜（Ｓｉｎ、膜）９
上には発光素子１７を固定する配線パターン１８が形成
されている。この配線パターンは金あるいはアルミニウ
ムの表面に金を被着させた構造となり、ドーム状の発光
素子１７の下面中央の円形状カソード電極１９に対面す
るコンタクト部２０を一端に肩し他端にカソード用ポン
ディングパッド２１を有するカソード用配線層２２と、
円形状カソード電極１９を取り囲むように形成される馬
蹄形アノード電極２３に対面するコンタクト部２４を一
端に宥し他端にアノード用ポンディングパッド２５を有
するアノード用配線層２６と、からなっている。そし℃
、発光素子１７はフェース・ダウン・ボンディングによ
って配ねパターン１８に接続される。また、カソード用
ポンディングパッド２１およびアノード用ポンディング
パッド２５と発光素子用カソードリード１４および発光
素子用アノードリード１３とはそれぞれワイヤ２７で接
続される。On the other hand, the flat insulating film (Sin, film) 9 of the submount 2
A wiring pattern 18 for fixing the light emitting element 17 is formed on the top. This wiring pattern has a structure in which gold is coated on the surface of gold or aluminum, and the contact portion 20 facing the circular cathode electrode 19 at the center of the lower surface of the dome-shaped light emitting element 17 is shouldered at one end, and the cathode electrode is placed at the other end. a cathode wiring layer 22 having a bonding pad 21;
It consists of an anode wiring layer 26 having a contact portion 24 facing a horseshoe-shaped anode electrode 23 formed to surround a circular cathode electrode 19 at one end and an anode bonding pad 25 at the other end. Soshi℃
, the light emitting device 17 is connected to the arrangement pattern 18 by face down bonding. Further, the cathode bonding pad 21 and the anode bonding pad 25 are connected to the light emitting element cathode lead 14 and the light emitting element anode lead 13 by wires 27, respectively.
さらに、ステム１の上部には天井部に透明ガラス板２８
を取り付けた金属製キャップ２９が検せられ、リングウ
ェルドによってステムＩＫ固定されている。Furthermore, a transparent glass plate 28 is provided on the ceiling above the stem 1.
The metal cap 29 with the attached is inspected and is fixed to the stem IK with a ring weld.
このような半導体装置にあっては、発光素子用のリード
間に所定の電圧を印加して発光素子１７から光を発光さ
せる。光は透明ガラス板２８を通って進み、障害物面で
反射して再びキャップ２９内に進み、受光素子３０面に
当たる。この結果、受光素子３０のＰＮ接合で電流が生
じる。そこで、この電流を受光素子用のリードから取り
出し、たとえば測長を行なう。In such a semiconductor device, a predetermined voltage is applied between the leads for the light emitting element to cause the light emitting element 17 to emit light. The light travels through the transparent glass plate 28, is reflected by the obstacle surface, travels into the cap 29 again, and hits the light receiving element 30 surface. As a result, a current is generated at the PN junction of the light receiving element 30. Therefore, this current is taken out from the lead for the light receiving element and, for example, length measurement is performed.
この半導体装置は受光素子３０をサブマウント２上に形
成していることから、従来品のように２つのサブマウン
トを必要としない。この結果、部品点数が減少し、原価
世減が図れる。また、この結果、発光素子１７をサブマ
ウント２に取り付けた後、サブマウント２をステム１に
取り付けるため、面倒な取付作業が従来品に比較して１
回少なくなり、工数の低減が図れるとともに、発光素子
１７と受光素子３０との位置関係の精度を高め易い。な
お、サブマウント２をステム１に取り付ける際のステム
の基準面との位置合せは、発光素子１７あるいは受光素
子３０のいずれでも使用でき便利である。Since this semiconductor device has the light receiving element 30 formed on the submount 2, it does not require two submounts unlike conventional products. As a result, the number of parts is reduced and costs can be reduced. In addition, as a result, since the light emitting element 17 is attached to the submount 2 and then the submount 2 is attached to the stem 1, the troublesome installation work is reduced compared to conventional products.
The number of times is reduced, the number of steps can be reduced, and the accuracy of the positional relationship between the light emitting element 17 and the light receiving element 30 can be easily improved. In addition, when attaching the submount 2 to the stem 1, alignment with the reference plane of the stem can be conveniently performed by using either the light emitting element 17 or the light receiving element 30.
また、この実施例ではサブマウント２の一部に直接受光
素子３０を形成する構造となることから、発光素子１７
および受光素子３０全体の面積を従来よりも小さくでき
、半導体装置の小型化も可能となる。In addition, since this embodiment has a structure in which the light receiving element 30 is directly formed on a part of the submount 2, the light emitting element 17
Moreover, the area of the entire light receiving element 30 can be made smaller than before, and the size of the semiconductor device can also be reduced.
なお、本発明は前記実施例に限定されない。Note that the present invention is not limited to the above embodiments.
以上のように、本発明によれば、発光素子と受光素子の
位置精度が高め易くかつ安価に製造することができる半
導体装置を提供することができる。As described above, according to the present invention, it is possible to provide a semiconductor device in which the positional accuracy of a light emitting element and a light receiving element can be easily improved and can be manufactured at low cost.
第１図は本発明の一実施例による半導体装置の断面図、
第２図は同じくサブマウントを固定し７たステムの平面
図である。
１・・・ステム、２・・・サブマウント、４・・・シリ
コン、基板、７・・・ＰＮ接合、１０．２１．２５・・
・ポンディングパッド、１２〜１５・・・リード、１７
・・・発光素子、１８・・・配線パターン、１９・・・
円形カソード電極、２３・・・馬蹄形アノード電極、２
８・・・透明ガラス板、２９・・・キャップ、３０・・
・受光素子。 □第 １ 図
２／１５１
／ｆ／３FIG. 1 is a sectional view of a semiconductor device according to an embodiment of the present invention, and FIG. 2 is a plan view of a stem to which a submount is similarly fixed. 1... Stem, 2... Submount, 4... Silicon, substrate, 7... PN junction, 10.21.25...
・Pounding pad, 12-15...Lead, 17
...Light emitting element, 18...Wiring pattern, 19...
Circular cathode electrode, 23... Horseshoe-shaped anode electrode, 2
8...Transparent glass plate, 29...Cap, 30...
·Light receiving element. □1st Figure 2/151 /f/3
Claims (1)
面での反射光を受光する受光素子とを有する半導体装置
において、前記発光素子は表層部の一部に直接受光素子
を形成した半導体からなるサブマウント上に絶縁的に取
り付けられていることを特徴とする半導体装置。1. A semiconductor device having a light-emitting element and a light-receiving element that receives light emitted from the light-emitting element and reflected from an obstacle surface, wherein the light-emitting element is a semiconductor in which a light-receiving element is directly formed on a part of the surface layer. A semiconductor device characterized by being insulatively mounted on a submount consisting of.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57081449A JPS58199573A (en) | 1982-05-17 | 1982-05-17 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP57081449A JPS58199573A (en) | 1982-05-17 | 1982-05-17 | Semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58199573A true JPS58199573A (en) | 1983-11-19 |
Family
ID=13746706
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP57081449A Pending JPS58199573A (en) | 1982-05-17 | 1982-05-17 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58199573A (en) |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4757197A (en) * | 1986-05-01 | 1988-07-12 | Lee Wai Hon | Semiconductor laser and detector device |
| US4905216A (en) * | 1986-12-04 | 1990-02-27 | Pencom International Corporation | Method for constructing an optical head by varying a hologram pattern |
| US5679979A (en) * | 1996-05-21 | 1997-10-21 | Weingand; Christopher Dirk | Surface mount package with heat transfer feature |
| JP2018019013A (en) * | 2016-07-29 | 2018-02-01 | コーデンシ株式会社 | Optical sensor |
| CN107978596A (en) * | 2016-10-24 | 2018-05-01 | 光宝光电(常州)有限公司 | OPTICAL SENSORS module and its object wearing device |
| WO2018147222A1 (en) * | 2017-02-10 | 2018-08-16 | ローム株式会社 | Semiconductor device |
-
1982
- 1982-05-17 JP JP57081449A patent/JPS58199573A/en active Pending
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4757197A (en) * | 1986-05-01 | 1988-07-12 | Lee Wai Hon | Semiconductor laser and detector device |
| US4905216A (en) * | 1986-12-04 | 1990-02-27 | Pencom International Corporation | Method for constructing an optical head by varying a hologram pattern |
| US5679979A (en) * | 1996-05-21 | 1997-10-21 | Weingand; Christopher Dirk | Surface mount package with heat transfer feature |
| JP2018019013A (en) * | 2016-07-29 | 2018-02-01 | コーデンシ株式会社 | Optical sensor |
| CN107978596A (en) * | 2016-10-24 | 2018-05-01 | 光宝光电(常州)有限公司 | OPTICAL SENSORS module and its object wearing device |
| WO2018147222A1 (en) * | 2017-02-10 | 2018-08-16 | ローム株式会社 | Semiconductor device |
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