JPS5821889A - Semiconductor assembly structure - Google Patents
Semiconductor assembly structureInfo
- Publication number
- JPS5821889A JPS5821889A JP56121168A JP12116881A JPS5821889A JP S5821889 A JPS5821889 A JP S5821889A JP 56121168 A JP56121168 A JP 56121168A JP 12116881 A JP12116881 A JP 12116881A JP S5821889 A JPS5821889 A JP S5821889A
- Authority
- JP
- Japan
- Prior art keywords
- light
- laser
- semiconductor
- photodetector
- emitting direction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 23
- 239000000523 sample Substances 0.000 claims 2
- 239000000758 substrate Substances 0.000 abstract description 5
- 230000005540 biological transmission Effects 0.000 abstract 1
- 239000000463 material Substances 0.000 description 7
- 239000011521 glass Substances 0.000 description 6
- 238000005253 cladding Methods 0.000 description 4
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 3
- 229910000833 kovar Inorganic materials 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000007789 sealing Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000010959 steel Substances 0.000 description 2
- 229910001209 Low-carbon steel Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000002470 thermal conductor Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02325—Mechanically integrated components on mount members or optical micro-benches
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/02208—Mountings; Housings characterised by the shape of the housings
- H01S5/02212—Can-type, e.g. TO-CAN housings with emission along or parallel to symmetry axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
- H01S5/068—Stabilisation of laser output parameters
- H01S5/0683—Stabilisation of laser output parameters by monitoring the optical output parameters
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Semiconductor Lasers (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は、ＤＡＤ （デジタル・オーディオ・ディスク
）用の半導体レーザ装置に適用して好適な半導体組立構
造に係わる。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor assembly structure suitable for application to a semiconductor laser device for DAD (digital audio disk).
ＤＡＤ用の半導体レーザ装置は、特に高精度が要求され
るもので、従来は例えば第１図に示すように、上面に半
導体受光素子（例えばホトダイオード）（１）を配し、
外部端子（２）が導出されてなるコバールからなるステ
ム（３）と、−側面に半導体レーザ索子（例えばレーザ
ダイオード）（４）’に実装した銅の放熱体（５）と、
レーザ索子（４）に対向する位置にガラス窓（６）す有
したコバールの無体（力とから成り、この３者を溶接し
て構成される。外部端子（２）においては、第１端子が
ステム（３）に直接電気的に接続され、他の第２及び第
３端子が夫々絶縁材（例えばガラス等）を介してステム
（３）と電気的に絶縁された状態で導出される。従って
、図示しないが、レーザ索子（４）の一方の電極部が放
熱体（５）及びステム（３）を介して第１端子に接続さ
れると共に、他方の電極部が第２端子にワイヤーリード
な介して接続される。又受光素子（１）の一方の電極部
が第１端子に接続され、他方の電極部が第３端子にワイ
ヤリードを介して接続される。レーザ素子（４）からの
レーザ光の第１の発光方向はガラス窓（６）に向い、第
２の発光方向は逆の受光素子（］）に向う。この受光素
子（１）は、レーザ出力が適正出力であるか否かを監視
するための検出素子として作用する。Semiconductor laser devices for DAD require particularly high precision, and conventionally, as shown in FIG.
a stem (3) made of Kovar from which an external terminal (2) is led out; a copper heat sink (5) mounted on a semiconductor laser cord (for example, a laser diode) (4)' on the - side;
The glass window (6) is located opposite the laser cord (4), and is made up of a Kovar intangible (forced), which is constructed by welding these three parts together.In the external terminal (2), the first terminal is directly electrically connected to the stem (3), and other second and third terminals are led out while being electrically insulated from the stem (3) via an insulating material (for example, glass, etc.). Therefore, although not shown, one electrode part of the laser cord (4) is connected to the first terminal via the heat sink (5) and the stem (3), and the other electrode part is connected to the second terminal by wire. The light-receiving element (1) has one electrode section connected to the first terminal, and the other electrode section connected to the third terminal via a wire lead.Laser element (4) The first light emitting direction of the laser light from the glass window (6) is directed toward the glass window (6), and the second light emitting direction is directed toward the opposite light receiving element (]).The light receiving element (1) has an appropriate laser output. It acts as a detection element for monitoring whether or not.
しかるに、このような構成の半導体レーザ装置において
は、受光系子（１）を取付けたステム（３）、し−ザ電
子（４）を取付けた放熱体（５）及び蓋体（７）の３つ
の部材を、相互の位置合せを高精度にして組立てなげれ
ばならず、その組立工１．′Ａが極めて手数を要するも
のであった。However, in a semiconductor laser device having such a configuration, the stem (3) to which the light-receiving element (1) is attached, the heat sink (5) to which the laser electron (4) is attached, and the lid (7). The two members must be assembled with high precision in mutual alignment, and the assembler must: 1. 'A was extremely time-consuming.
本発明は、上述の点に鑑み、組立工程を簡略化し、且つ
高精度に製造できる半導体レーザ装置の如き半導体組立
構造を提供するものである。In view of the above points, the present invention provides a semiconductor assembly structure such as a semiconductor laser device that can simplify the assembly process and can be manufactured with high precision.
以下、第２図乃至第４図を用いて本発明による半導体組
立構造即ちＤＡＤ用の半導体レーザ装置を説明しよう。Hereinafter, a semiconductor assembly structure according to the present invention, that is, a semiconductor laser device for DAD will be explained using FIGS. 2 to 4.
本発明においては、第２図に示すように第１及び第２の
発光方向を有する半導体レーザ素置例えばレーザダイオ
ード）（４）と、半導体受光素子（例えばホトダイオー
ド）（１）と、放熱体及びステムを−Ａｌζねる電気及
び熱伝導性のある基体（１１Ｊと、ガラス等の光透過窓
（６）を有する蓋体（力とから成る。基体αυは、第３
図及び第４図に示すようにフランジ部０２と、中央の台
部（１３）と、これより垂直な側面α荀を有する柱状部
α■とを有し、例えば軟鋼材より成り、プレス加工にて
一体成型で作られる。この基体（ＩＩ）には、例えば３
本の外部端子（２）が導出され、そのうち第１端子（２
ａ）は上端を基体（１１）に直接埋込まれて′電気的に
基体（１１）と一体となされ、他の第２及び第３端子（
２１））及び（２Ｃ）は、基体（１］）との間にガラス
等の絶縁物１１６）を介在させて基体（１υを貫Ｊｉ
して植立される。台部０３）の−面Ｂｌｌち受光素子（
１）を取付ける回は傾斜面０７）に形成され、この面に
受光素子（１）が取付けられる。受光素子（１）の一方
の電極部は台部α段に直＋＆接続され、他方の電極部は
ワイヤーリードな介して例えば第３端子（２Ｃ）に表続
される。In the present invention, as shown in FIG. 2, a semiconductor laser device (for example, a laser diode) (4) having first and second light emission directions, a semiconductor light receiving element (for example, a photodiode) (1), a heat sink and It consists of an electrically and thermally conductive base (11J) that connects the stem to -Alζ, and a lid body (forced) having a light-transmitting window (6) made of glass or the like.
As shown in the figure and FIG. 4, it has a flange part 02, a central platform part (13), and a columnar part α■ having a side surface α perpendicular to the flange part 02, and is made of, for example, mild steel, and is suitable for press working. It is made by integral molding. This substrate (II) contains, for example, 3
The external terminals (2) of the book are led out, of which the first terminal (2
a) has its upper end directly embedded in the base (11) so that it is electrically integrated with the base (11), and is connected to the other second and third terminals (
21)) and (2C) are made by inserting an insulating material 116) such as glass between the base body (1υ) and the base body (1υ).
and planted. - side Blli photodetector (
1) is formed on the inclined surface 07), and the light receiving element (1) is mounted on this surface. One electrode portion of the light-receiving element (1) is directly connected to the pedestal α stage, and the other electrode portion is connected to, for example, a third terminal (2C) via a wire lead.
又、柱状部（囮の垂直な１１１１面αａにレーザ素子（
４）が取付けられる。レーザ素子（４）の一方の電極部
は側面ａ（イ）に直接接続され、他方の電極部はワイヤ
ーリードを介して例えば第２端子（２ｂ）に接続される
。受光素子（１）は、レーザ素子（４）からの第２の発
光方向に対応した位ｒｉに設けられる。そして、基体θ
υのフランジ部αカの面に例えばコバールからなる基体
（力が、その窓（６）をレーザ素子（４）の第１発光方
向に対向するようにして浴接封止される。このときの封
止は鉄等の溶接材が選ばれる。向、熱抵抗を改善するに
は、第５図に示すように基体αυを銅等の高熱伝導材に
て形成し、その封止部分のみに溶接部材（１８）を設け
、例えば鉄リングをろう伺けするか、Ｎｉのクラツド材
を形成するか、あるいは部分メッキを施すを可とする。In addition, a laser element (
4) is installed. One electrode portion of the laser element (4) is directly connected to the side surface a (a), and the other electrode portion is connected to, for example, the second terminal (2b) via a wire lead. The light receiving element (1) is provided at a position ri corresponding to the second light emission direction from the laser element (4). And the base θ
A base made of Kovar, for example, is bath-bonded and sealed on the surface of the flange portion α of υ with its window (6) facing the first light emission direction of the laser element (4). A welding material such as iron is selected for sealing.In order to improve the thermal resistance, the base αυ is made of a high heat conductive material such as copper, as shown in Figure 5, and welding is performed only on the sealing part. A component (18) can be provided, for example by soldering an iron ring, by forming a Ni cladding, or by partial plating.
上述の構成によれば、レーザ素子（４）及び受光素子（
１）を取付けた基体αυと、蓋体（力の２つの部材で組
立てられるので、部品点数が少なくその組立工程の簡略
化が図れる。同時に、基体Ｕυがプレス加工で形成され
、レーザ素子（４）及び受光系子（１）の位置関係が正
しく得られるので、高積度に且つ安価にこの種半導体レ
ーザ装置が製造できる。又、受光素子（１）に於ては、
傾斜面（１７）に取付けられ受光素子（１）の面が傾斜
しているために、レーザ光の受光素子面での反射光が入
射光とある角度をもって反射され、正規のレーザ光との
干渉が回避される。According to the above configuration, the laser element (4) and the light receiving element (
Since it is assembled with two members, the base αυ with the laser element (1) attached and the lid body (forced), the number of parts is small and the assembly process can be simplified.At the same time, the base body Uυ is formed by press working, and the laser element (4 ) and the light-receiving element (1) can be obtained correctly, so this type of semiconductor laser device can be manufactured with high integration and at low cost.Furthermore, in the light-receiving element (1),
Since the surface of the light receiving element (1) mounted on the inclined surface (17) is inclined, the reflected light of the laser beam on the light receiving element surface is reflected at a certain angle with respect to the incident light, resulting in interference with the regular laser light. is avoided.
尚、受光系子（１１を取付けたステム（３）、レーザ素
子（４）を取付けた放熱体（５）及び着体（力の３つの
部材から成る４１４成において、その放熱体（５）の熱
抵抗の改善な図り、同時に完全封止を容易にするために
は、例えば第６図に示す如き構成とすることができる。In addition, in the 414 configuration consisting of three members: the stem (3) to which the light receiving system element (11 is attached), the heat radiator (5) to which the laser element (4) is attached, and the attachment body (force), the heat radiator (5) is In order to improve the thermal resistance and at the same time facilitate complete sealing, a configuration as shown in FIG. 6, for example, can be adopted.
即ち、第６図に示すように、鋼材（２０）の両面にニッ
ケル等のクラツド材（２１）を設けた基板からプレス加
工して放熱体（５うを形成し、その鋼材（２０）の側面
にレーザ素子（４）を取付け、且つクラツド材０υを介
して蓋体（力、放熱体（５つ及びステム（３）を封止す
る。このような放熱体（５つによれば、鋼材（イ）が高
熱伝導体であるのでレーザ素子（４）の発熱を抑え、且
つ表面のクラツド材（２１）によって溶接封止が完全に
行えるものであり、熱抵抗の改善された半導体レーザ装
置が得られる。That is, as shown in FIG. 6, a heat dissipating body (5) is formed by pressing a substrate with cladding material (21) such as nickel on both sides of a steel material (20), and the side surfaces of the steel material (20) are pressed. Attach the laser element (4) to the cladding material 0υ, and seal the lid body (5), the heat radiator (5) and the stem (3) through the clad material 0υ. Since a) is a high thermal conductor, it suppresses the heat generation of the laser element (4) and can be completely welded and sealed with the cladding material (21) on the surface, resulting in a semiconductor laser device with improved thermal resistance. It will be done.
第１図は従来の半導体レーザ装置の例な示す断面図、第
２図は本発明による半導体レーザ装置の例を示す断面図
、第３図及び第４図はその基体の平面図及び断面図、第
５図及び第６図は夫々本発明の他の例を示す断面図であ
る。
（１）は受光素子、（３）はステム、（４）はレーザ素
子、（６）は光透過窓、（力は蓋体、０υは基体である
。FIG. 1 is a sectional view showing an example of a conventional semiconductor laser device, FIG. 2 is a sectional view showing an example of a semiconductor laser device according to the present invention, FIGS. 3 and 4 are a plan view and a sectional view of its base body, FIGS. 5 and 6 are sectional views showing other examples of the present invention, respectively. (1) is a light receiving element, (3) is a stem, (4) is a laser element, (6) is a light transmitting window, (force is a lid body, and 0υ is a base body.
Claims (1)
半導体受光素子と、電気及び熱伝導性のある基体と、該
基体の第１面に取付けられ光透過窓を有する蓋体とから
成り、上記第１の発光方向が上記着体の光透過窓に向い
、上記第２の発光方向が上記受光素子に向うように上記
半導体レーザ索子及び半導体受光素子が上記基体の第１
面に取付けられて成る半導体組立構造。a semiconductor laser probe having first and second emission directions;
It consists of a semiconductor light-receiving element, an electrically and thermally conductive base, and a lid attached to a first surface of the base and having a light transmitting window, and the first light emitting direction is directed to the light transmitting window of the attached body. The semiconductor laser probe and the semiconductor light receiving element are arranged in the first direction of the base so that the second light emission direction is directed toward the light receiving element.
A semiconductor assembly structure that is attached to a surface.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56121168A JPS5821889A (en) | 1981-07-31 | 1981-07-31 | Semiconductor assembly structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56121168A JPS5821889A (en) | 1981-07-31 | 1981-07-31 | Semiconductor assembly structure |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5821889A true JPS5821889A (en) | 1983-02-08 |
Family
ID=14804522
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56121168A Pending JPS5821889A (en) | 1981-07-31 | 1981-07-31 | Semiconductor assembly structure |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5821889A (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01283985A (en) * | 1988-05-11 | 1989-11-15 | Shinko Electric Ind Co Ltd | Package for mounting light emitting element and manufacture thereof |
| JP2004146777A (en) * | 2002-08-26 | 2004-05-20 | Sumitomo Electric Ind Ltd | Semiconductor laser module and semiconductor laser |
| JP2006080418A (en) * | 2004-09-13 | 2006-03-23 | Mitsubishi Electric Corp | Canned optical semiconductor device and optical module |
| JP2007053252A (en) * | 2005-08-18 | 2007-03-01 | Shinko Electric Ind Co Ltd | Package for optical semiconductor devices and its manufacture |
| JP2009514199A (en) * | 2005-10-27 | 2009-04-02 | リモ パテントフェルヴァルトゥング ゲーエムベーハー ウント コー．カーゲー | Semiconductor laser device |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS566494A (en) * | 1979-06-26 | 1981-01-23 | Philips Nv | Semiconductor laser device |
| JPS5669882A (en) * | 1979-11-09 | 1981-06-11 | Mitsubishi Electric Corp | Semiconductor luminous device |
-
1981
- 1981-07-31 JP JP56121168A patent/JPS5821889A/en active Pending
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS566494A (en) * | 1979-06-26 | 1981-01-23 | Philips Nv | Semiconductor laser device |
| JPS5669882A (en) * | 1979-11-09 | 1981-06-11 | Mitsubishi Electric Corp | Semiconductor luminous device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01283985A (en) * | 1988-05-11 | 1989-11-15 | Shinko Electric Ind Co Ltd | Package for mounting light emitting element and manufacture thereof |
| JP2004146777A (en) * | 2002-08-26 | 2004-05-20 | Sumitomo Electric Ind Ltd | Semiconductor laser module and semiconductor laser |
| JP4586337B2 (en) * | 2002-08-26 | 2010-11-24 | 住友電気工業株式会社 | Semiconductor laser module and semiconductor laser device |
| JP2006080418A (en) * | 2004-09-13 | 2006-03-23 | Mitsubishi Electric Corp | Canned optical semiconductor device and optical module |
| JP2007053252A (en) * | 2005-08-18 | 2007-03-01 | Shinko Electric Ind Co Ltd | Package for optical semiconductor devices and its manufacture |
| JP2009514199A (en) * | 2005-10-27 | 2009-04-02 | リモ パテントフェルヴァルトゥング ゲーエムベーハー ウント コー．カーゲー | Semiconductor laser device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4351051A (en) | Semiconductor laser device with an assembly block | |
| JP3618534B2 (en) | Optical communication lamp device and manufacturing method thereof | |
| US7889770B2 (en) | Semiconductor laser device | |
| US4167744A (en) | Electroluminescent semiconductor device having optical fiber window | |
| JPH06204566A (en) | Package for coupling optical fiber and optical device and optical fiber/optical device module | |
| KR100780522B1 (en) | Semiconductor laser | |
| CN113451875B (en) | Laser device | |
| US7037001B2 (en) | Optical module having an extension member for connecting a device to a lead terminal disposed behind the sub-mount | |
| KR100439115B1 (en) | Cap for electronic parts | |
| JPH02203553A (en) | Glass-metallic case for semiconductor device and its manufacture | |
| JPS62260384A (en) | Semiconductor device | |
| JP2678944B2 (en) | Method for bonding a semiconductor chip to a substrate | |
| JPS5821889A (en) | Semiconductor assembly structure | |
| JP2007109715A (en) | Package for optical semiconductor element and optical semiconductor device | |
| US4642513A (en) | Electrooptic assembly having an adjustable window | |
| JPS5996789A (en) | Photosemiconductor device | |
| US7791084B2 (en) | Package with overlapping devices | |
| JP7014645B2 (en) | Semiconductor light emitting device | |
| US5324936A (en) | Hybrid optical/electrical circuit module with thermal insulation | |
| JP2001168447A (en) | Laser diode optical module | |
| JP3717623B2 (en) | Optoelectronic device and manufacturing method thereof | |
| JPH02174179A (en) | Optoelectronic device and its manufacture | |
| JPS6271289A (en) | Optoelectronic device | |
| JP3513295B2 (en) | Stem for hermetic terminal | |
| JPH04243181A (en) | Semiconductor laser module |