JPH07183415A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PURPOSE:To improve optical characteristics and at the same time to increase a manufacturing yield by providing a gap between the peripheral edge of a translucent plate arranged on a translucent resin buried inside an opening part and the peripheral edge of the opening part to pass a bubble generated in the translucent resin to the exterior. CONSTITUTION:A semiconductor device 1 is constituted of a base 2 for mounting a semiconductor element 10 nearly at the center, a frame 3 provided with an opening part 31 in the upper region of the semiconductor element 10 provided on the base 2, a translucent resin 4 filled up in the opening part 31 and a translucent plate 5 arranged on the translucent resin 4. Further, since a gap 51 is provided between the peripheral edge of the translucent plate 5 and the peripheral edge of the opening part 31, a bubble generated in the translucent resin 4 is passed through the gap 51 to the exterior. The translucent plate 5 is arranged in a notched part 32, thereby being able to accurately maintain a distance between a bonding wire 6 to be connected with a lead 7 and the bottom surface of the translucent plate 5.

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor element is covered with a translucent resin and a translucent plate is disposed on the semiconductor element, and a method for manufacturing the same.

[0002]

2. Description of the Related Art A semiconductor device using a hollow package is
It is mainly used as an optical component such as a CCD area sensor or a CC linear sensor, and an optical signal from the outside is received by a semiconductor element such as a CCD via a hollow portion. In addition, in a semiconductor device including a laser element alone or an IC that amplifies laser light, an optical signal is emitted through the inside of the hollow portion.

A semiconductor device composed of a hollow package is mainly composed of a base made of ceramics, glass-epoxy (hereinafter referred to as glass epoxy) resin or the like, and a frame provided with an opening at substantially the center and provided on the base. , A semiconductor element mounted on a base in the opening, and a translucent plate made of glass, plastic or the like mounted on the frame.

The translucent plate is mounted on the frame via an adhesive composed of, for example, a B stage sealer,
It serves to hermetically seal the semiconductor element mounted on the base in the opening and to transmit the light from the outside to the semiconductor element inside the package.

However, the semiconductor device having such a hollow package has manufacturing troubles such as hardness management of an adhesive such as a B-stage sealer for attaching a light-transmitting plate, and dust and semiconductor elements during the manufacturing process. This causes a problem that chips and the like during dicing move in the hollow portion and cause defects in the read image.

Therefore, in the hollow portion of the hollow package, for example, an ultraviolet-curable resin, a resin curable by heat with ultraviolet rays, an epoxy-based thermosetting resin, a silicone-based thermosetting resin, or a silicone-based UV-curable resin is used as a light-transmitting material. It has been considered to fill the resin with a resin. In addition, the problem of wrinkles on the surface caused by the curing shrinkage of the translucent resin, the problem of scratches when using a soft translucent resin to alleviate cracks due to the difference in linear expansion coefficient from the base, etc. In order to solve the problem, a semiconductor device in which the surface of a transparent resin is covered with a transparent plate such as glass or transparent plastic is considered.

FIG. 10 is a sectional view for explaining such a semiconductor device. That is, the semiconductor device 1 is mainly composed of a frame 2 having a base 2 and an opening 31 made of ceramics or glass epoxy resin, a semiconductor element 10 mounted on the base 2 in the opening 31, and an opening. A translucent resin 4 which is filled in the portion 31 to seal the semiconductor element 10;
It is composed of a transparent plate 5 mounted on the frame 3 and covering the transparent resin 4.

In order to manufacture this semiconductor device 1, first,
The semiconductor element 10 is mounted on the base 2 via a die-bonding paste material, and the bonding wire 6 is used to electrically connect the semiconductor element 10 and the leads 7. Next, the translucent resin 4 as described above is potted inside the opening 31 to cover the periphery of the semiconductor element 10 and the bonding wire 6. In this state, the transparent plate 5 is placed on the upper surface of the frame 3 to bring the transparent plate 5 and the transparent resin 4 into close contact with each other, and then the transparent resin 4 is cured by ultraviolet rays or heating. This makes it possible to manufacture the semiconductor device 1 that is strong against scratches and has no wrinkles on the surface.

[0009]

However, such a semiconductor device and its manufacturing method have the following problems. That is, in the semiconductor device 1 shown in FIG. 10, the transparent plate 5 is attached to the upper surface of the frame 3 to seal the inside of the opening 31 filled with the transparent resin 4, so that the transparent resin 4 is formed. The air bubbles 41 in the translucent resin 4 generated during the potting are also enclosed together. Further, when the translucent plate 5 is mounted on the frame 3, air is trapped between the translucent plate 5 and the translucent resin 4, or the gas generated when the translucent resin 4 is cured is translucent. Air bubbles 41 accumulate near the plate 5.

If such bubbles 41 are accumulated in the translucent resin 4, optical defects such as uneven sensitivity of the image read by the semiconductor element 10 and erroneous detection will occur, and the semiconductor device 1 will not operate properly. You will end up with a good product.
Further, even when the bonding wire 6 in the translucent resin 4 is exposed to light, diffuse reflection occurs, and the semiconductor element 10 is optically affected. Therefore, an object of the present invention is to provide a semiconductor device excellent in optical characteristics and capable of improving a manufacturing yield, and a manufacturing method thereof.

[0011]

SUMMARY OF THE INVENTION The present invention is a semiconductor device and a method of manufacturing the same which are made to solve such problems. That is, this semiconductor device includes a base for mounting a semiconductor element at substantially the center, a frame provided on the base with an opening in at least an upper region of the semiconductor element, and a base embedded in the opening. A transparent resin for sealing the semiconductor element mounted on the transparent resin, and a transparent plate arranged on the transparent resin. A gap is provided between the peripheral edge of the transparent plate and the peripheral edge of the opening. It is configured with. Also,
A semiconductor device having such a gap is also provided with notches having a predetermined depth facing the opening on both sides of the frame centering on the semiconductor element, and the translucent plate being arranged in the notches.

Moreover, the transparent plate may block infrared rays, may be provided with an antireflection film, or may be provided with both of them. Further, the semiconductor device of the present invention includes a base for mounting a semiconductor element having a predetermined effective area substantially in the center, and a frame provided on the base and having an opening at least in an upper area of the semiconductor element. , A transparent resin that is embedded in the opening and seals the semiconductor element mounted on the base, a transparent plate disposed on the transparent resin, and an effective area of the semiconductor element on the surface of the transparent plate. And a light-shielding film provided in a region other than the portion corresponding to. In addition, as a transparent plate of this semiconductor device, it may block infrared rays, have an antireflection film, or have both of them.

A method of manufacturing a semiconductor device according to the present invention is
A frame having a substantially rectangular opening in the approximate center is provided on a base, a semiconductor element is mounted on the base in the opening and covered with a translucent resin, and a translucent plate is placed on the translucent resin. In the manufacturing method of disposing, a notch having a predetermined depth and a width shorter than a corresponding side of the opening is provided on both sides of the frame centering on the opening, respectively. Filling the opening with a translucent resin with the element mounted, and then placing a translucent plate with a width almost equal to the width of the notch on the stepped surface of the notch while pressing the translucent resin. Further, it is a method in which, when the translucent resin is filled, it is filled up to a position higher than the step surface of the notch.

[0014]

In the semiconductor device of the present invention, a gap is provided between the peripheral edge of the transparent plate disposed on the transparent resin embedded in the opening and the peripheral edge of the opening. Bubbles generated in the translucent resin will escape to the outside. Further, the height and the position of the light-transmissive plate can be determined by the notches having a predetermined depth, which face the openings provided on both sides of the frame centering on the semiconductor element. Further, by using a transparent plate capable of blocking infrared rays from the outside or providing an antireflection film, unnecessary light is prevented from reaching the semiconductor element. In addition, the light-shielding film is provided at least on the side of the light-transmitting plate that is in contact with the light-transmitting resin, in a region other than the region corresponding to the effective region of the semiconductor element, so that light from outside the effective region of the semiconductor element is blocked can do. For this reason, light does not hit the bubbles and bonding wires generated in the translucent resin other than the effective area, and diffuse reflection does not occur.

Further, in this method of manufacturing a semiconductor device, since the notch is provided in advance on both sides of the frame so as to face the opening and have a predetermined depth and a width shorter than the corresponding side of the opening. By mounting a light-transmitting plate having a width substantially equal to that on the step surface, a gap is created between the peripheral edge of the opening and the peripheral edge of the transparent plate. Further, when the translucent resin is pressed by mounting the translucent plate on the stepped surface of the notch, the bubbles in the translucent resin are pressed and discharged from the gap. If the translucent resin is filled up to a position higher than the stepped surface of the cutout, the translucent resin is pressed and air bubbles can be discharged during the work of placing the translucent plate.

[0016]

Embodiments of the semiconductor device and the method of manufacturing the same according to the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram illustrating a first embodiment of a semiconductor device of the present invention.
(A) is sectional drawing, (b) is a perspective view. In the following example, CC is
The semiconductor device 1 including the D linear sensor will be described as an example.

That is, the semiconductor device 1 according to the first embodiment is mainly composed of a base 2 for mounting the semiconductor element 10 substantially in the center, and a substantially rectangular shape provided on the base 2 and at least in an upper region of the semiconductor element 10. The frame 3 having the opening 31 and the translucent resin 4 embedded in the opening 31.
And a transparent plate 5 such as glass or plastic disposed on the transparent resin 4, and the transparent plate 5
A gap 51 having a predetermined width is provided between the peripheral edge of and the peripheral edge of the opening 31.

Further, the semiconductor device 1 is provided with notches 32 of a predetermined depth facing the opening 31 on both sides of the semiconductor element 10 of the frame 3 for arranging the transparent plate 5, The translucent plate 5 can be positioned by the notch 32.

As described above, the peripheral edge of the transparent plate 5 and the opening 31.
Since the gap 51 is provided between the air bubble 41 and the peripheral edge of the light-transmitting resin 4, bubbles 41 (FIG.
(See) escapes to the outside through the gap 51. Furthermore, by disposing the translucent plate 5 in the cutout 32, the distance between the bonding wire 6 connected to the lead 7 and the lower surface of the translucent plate 5 can be accurately maintained, and at the same time, the translucent plate 5 can be maintained. The position with respect to the rotation direction can be regulated.

Next, a method of manufacturing such a semiconductor device 1 will be described in order with reference to FIGS. First, FIG.
As shown in (a), notches 32 facing the opening 31 are provided in advance on the left and right sides of the frame 3 in the drawing, for example.
The notch 32 has a width h shorter than the length H of the side of the corresponding opening 31, and has a depth D from the upper surface thereof as shown in FIG. 2B.

Next, such base 2 and frame 3
As shown in FIG. 3, the semiconductor element 10 is mounted using. That is, the semiconductor element 10 is mounted in a recess provided in the substantial center of the base 2 through a silver paste or the like, and the bonding wire 6 is used to electrically connect the semiconductor element 10 and the lead 7. As a result, the semiconductor element 10 and the bonding wire 6 are housed in the opening 31 at the substantially center of the frame 3.

Next, as shown in FIG.
And the opening 31 in which the bonding wire 6 is housed
The transparent resin 4 is potted inside. The translucent resin 4 is cured by ultraviolet rays or heat, such as an ultraviolet curable resin, a resin that is cured by ultraviolet rays and heat, an epoxy-based thermosetting resin, a silicone-based thermosetting resin, or a silicone-based UV curable resin, as in the conventional case. The transparent resin 4 is filled up to a position slightly higher than the step surface 32a of the notch 32, for example. In addition,
After potting the translucent resin 4, air bubbles 41 (see FIG. 10) may remain in the translucent resin 4 as in the conventional case, but they can be discharged in a step described later.

Next, as shown in FIG.
The notch 32 is provided on the step surface 32a of the notch 32 provided in
The translucent plate 5 having a width substantially equal to the width is placed. Translucent plate 5
A plate glass of borosilicate or the like or a plastic plate of acrylic, polycarbonate or the like is used as the material. As described above, since the width h of the cutout 32 is shorter than the length H of the side of the corresponding opening 31 (see FIG. 5B), the translucent plate 5 having a width substantially equal to this width h. Is placed in the notch 32, a gap 51 is formed between the peripheral edge of the transparent plate 5 and the peripheral edge of the opening 31.

Further, by mounting the transparent plate 5, the transparent resin 4 filled in the opening 31 is pressed. That is, if the translucent resin 4 is applied to a position slightly higher than the step surface 32a, the translucent resin 4 can be pressed by the lower surface of the translucent plate 5 while the translucent plate 5 is placed. .

If the transparent resin 4 is not filled in a position higher than the step surface 32a, the lower surface of the transparent plate 5 is placed below the step surface 32a when the transparent plate 5 is placed. By providing the convex portion (provided that it has no optical adverse effect), the translucent resin 4 can be pressed while the translucent plate 5 is placed.

By pressing the translucent resin 4 at the stage where the translucent plate 5 is placed in this manner, bubbles 41 generated during potting in the translucent resin 4 by the pressure (see FIG. 10). Can be driven out. Then, the expelled bubbles 41 (see FIG. 10) are generated in the peripheral edge of the transparent plate 5 and the opening 31.
It is discharged to the outside through a gap 51 provided between the outer periphery of the sheet.

With the translucent plate 5 placed, there is a distance d between the lower surface of the translucent plate 5 and the arch of the bonding wire 6. When the arch height of the bonding wire 6 is constant, this distance d is determined by the depth D of the notch 32 (see FIG. 2B). That is, the notch 3 is formed in the frame 3.
At the stage of providing 2, the depth D is set according to the distance d.

After the translucent plate 5 is placed in this manner, the translucent resin 4 is cured by heating a predetermined amount of ultraviolet rays or a predetermined temperature, and the translucent plate 5 is fixed to the frame 3 and the translucent resin 4. Connect on. Even if a gas is generated inside during the curing of the translucent resin 4, the gas is discharged from the gap 51 provided between the peripheral edge of the transparent plate 5 and the peripheral edge of the opening 31. Become. As a result, bubbles 41 (see FIG. 1) are formed inside the transparent resin 4.
It is possible to manufacture the semiconductor device 1 in which there is no (see 0).

Next, a second embodiment of the semiconductor device 1 of the present invention will be described with reference to FIG. That is, in the semiconductor device 1 according to the second embodiment, the transparent plate 5 is arranged such that the upper surface of the transparent plate 5 is arranged below the upper surface of the frame 3. As a result, the distance d'between the lower surface of the transparent plate 5 and the arch of the bonding wire 6 becomes smaller than the distance d shown in FIG. That is, the distance d ′ can be reduced by making the depth D of the cutout portion 32 shown in FIG. 2B deeper than in the case of the embodiment described above.

It is desirable that this distance d'is as small as possible. That is, since the arrangement position of the transparent plate 5 is lowered, the amount of the transparent resin 4 for filling the inside of the opening 31 can be reduced, and so-called what occurs when the transparent resin 4 is cured. It is possible to reduce the image quality defect of the semiconductor element 10 made of sink marks and streaks in the resin.

Further, by lowering the arrangement position of the transparent plate 5, most of the side surface 5a of the transparent plate 5 can be embedded in the transparent resin 4 (see a partially enlarged view of FIG. 6B). . By thus filling the side surface 5a of the translucent plate 5 with the translucent resin 4, there is no need to perform thread chamfering or C chamfering when manufacturing the translucent plate 5, and the translucent plate 5 is manufactured. It is possible to greatly simplify the above.

Further, in the semiconductor device 1 in the first and second embodiments, the light transmitting plate 5 may be one that can block infrared rays from the outside. For example, it is possible to block infrared rays by forming the translucent plate 5 with phosphoric acid glass, or by laminating phosphoric acid glass with a UV curable adhesive on a normal plate glass made of borosilicate or the like. .

Further, the light transmitting plate 5 may be provided with an antireflection film. For example, a single layer coating of magnesium fluoride, Si
O / SiO ₂ , zirconium oxide, Ta ₂ O ₅ / Al ₂
By applying a multi-layer coating made of O ₃ or the like to the transparent plate 5, unnecessary reflection can be prevented. Further, by applying an antireflection film to the light-transmitting plate 5 made of the above-mentioned phosphate glass, it becomes possible to block infrared rays and prevent unnecessary reflection, and at the same time, the light-transmitting resin 4 of the light-transmitting plate 5 made of phosphate glass is used. It is possible to improve the adhesion to the inner wiring and prevent corrosion of the internal wiring due to invasion of phosphoric acid generated by the reaction with water from the phosphate glass.

Next, the semiconductor device 1 according to the third embodiment of the present invention will be described with reference to the schematic sectional view of FIG. That is, in the semiconductor device 1 according to the third embodiment, the light shielding film 52 is provided on the surface of the transparent plate 5 in a region other than the portion corresponding to the effective region S of the semiconductor element 10.

FIG. 7A shows a third embodiment (No. 1). This semiconductor device 1 has a base 2 on which the semiconductor element 10 is mounted substantially at the center, and a base 2 on the base 2. A predetermined gap 5 is provided between the frame 3 provided with the opening 31 and the translucent resin 4 embedded in the opening 31 and the frame 3.
1 and the light-transmissive plate 5 arranged so as to be opened. At least on the side of the light-transmissive plate 5 that is in contact with the light-transmissive resin 4, chrome or A light shielding film 52 made of molybdenum or the like is provided.

In this semiconductor device 1, when the transparent plate 5 is placed, the bubbles can escape to the outside from the gap 51, and the bonding wire 6 for connecting the semiconductor element 10 and the lead 7 with the light shielding film 52. The unnecessary light does not hit the. Therefore, it is possible to suppress irregular reflection of light by the bubbles and the bonding wire 6, and it is possible to transmit only the necessary light to the semiconductor element 10.

FIG. 7B shows the third embodiment (part 2).
7A, the semiconductor device 1 shown in FIG. 7A has no gap 51 between the frame 3 and the transparent plate 5. Even in such a semiconductor device 1, the same light-shielding film 52 as that described above is provided in a region of the light-transmitting plate 5 that is in contact with at least the light-transmitting resin 4 in a region other than a portion corresponding to the effective region S of the semiconductor element 10. Keep it.

That is, in this semiconductor device 1, since a predetermined gap 51 (see FIG. 7A) is not provided between the frame 3 and the light transmitting plate 5, bubbles are not formed when the light transmitting plate 5 is placed. Will occur. However, when the translucent resin 4 is potted in the opening 31, the central portion of the translucent resin 4 rises due to the surface tension, and the translucent plate 5 is attached to the translucent resin 4.
When it is placed on the transparent plate 5, air bubbles contact the transparent resin 4 from the central part of the transparent plate 5 toward the outside, so that many bubbles are present in the outer part of the transparent plate 5, that is, the part close to the frame 3. Occur.

A portion of the transparent plate 5 near the frame 3 is a region other than a portion corresponding to the effective region S of the semiconductor element 10, and a light shielding film 52 is provided here. Therefore, even if bubbles are generated in the transparent resin 4, the light shielding film 52
The light is blocked by the light and does not hit the bubbles, so that diffuse reflection does not occur. In addition, the bonding wire 6 in the translucent resin 4 is not exposed to light, and diffuse reflection from here does not occur.

Further, in both the third embodiment (No. 1) shown in FIG. 7A and the third embodiment (No. 2) shown in FIG. 7B, the translucent plate 5 is made of phosphate glass. It is possible to block infrared rays from the outside by forming or by bonding a glass plate made of a normal borosilicate or the like and a phosphoric acid glass with an ultraviolet curing adhesive. Moreover, even when phosphoric acid glass is used as the light-transmitting plate 5, since the light-shielding film 52 made of chromium or the like as described above is provided, the phosphoric acid generated by reacting with the moisture invading the phosphoric acid glass is generated. It is possible to reduce the amount of light that is blocked by the light shielding film 52 and is mixed into the transparent resin 4.

Further, the light transmitting plate 5 may be provided with an antireflection film. For example, a single layer coating of magnesium fluoride, Si
O / SiO ₂ , zirconium oxide, Ta ₂ O ₅ / Al ₂
By applying a multi-layer coating made of O ₃ or the like to the transparent plate 5, unnecessary reflection can be prevented. Further, by applying an antireflection film to the light-transmitting plate 5 made of the above-mentioned phosphate glass, it becomes possible to block infrared rays and prevent unnecessary reflection, and at the same time, the light-transmitting resin 4 of the light-transmitting plate 5 made of phosphate glass is used. It is possible to improve the adhesion to the inner wiring and prevent corrosion of the internal wiring due to the phosphoric acid generated by the reaction between the phosphate glass and the water.

FIG. 8 is a diagram showing an example of application of the present invention to another shape, wherein (a) shows a pin type and (b) shows a surface mount type. For example, the semiconductor device 1 shown in FIG.
In the above, a base 2 made of glass epoxy resin is used, and a pin 7 plated with Sn or the like is applied to the base 2.
1 is inserted. When the base 2 made of such glass epoxy resin is manufactured, if the notch 32 (see FIG. 2) described above is formed, even if it is a pin type, air bubbles are generated inside the transparent resin 4. The semiconductor device 1 in which 41 (see FIG. 10) does not exist can be manufactured.

Further, in the semiconductor device 1 shown in FIG. 8B, the base 2 made of glass epoxy resin is used as in the above, and the through conductor 72a and the through conductor 72a are electrically connected to the base 2. The back electrode 72 is formed. If the notch 32 (see FIG. 2) is provided at the time of manufacturing the base 2, bubbles 41 (see FIG. 10) are formed inside the translucent resin 4 even in the case of the surface mounting type. It is possible to manufacture the semiconductor device 1 which does not exist.

Although the semiconductor device 1 including the CCD linear sensor has been described as an example in any of the semiconductor devices 1 in the first to third embodiments, the present invention is not limited to this, and the CCD area sensor and the internal portion. The same applies to any semiconductor device that needs to transmit light to the semiconductor element 10. Further, the semiconductor device 1 may include the semiconductor element 10 that emits and emits light such as a laser.

Furthermore, a laser chip 1 as shown in FIG.
The same applies to the semiconductor device 1 including a photocoupler including the photodiode 1 and the photodiode 12. That is, the semiconductor device 1 including this photocoupler includes an amplifying IC chip 10a mounted in a hollow portion on the base 2, a laser chip 11 and a photodiode 12 mounted on the IC chip 10a, and a laser. A prism 13 that reflects the light from the chip 11 upward and reflects the light incident from above toward the photodiode 12.
And the translucent resin 4 filled in the hollow interior and the frame 3
A transparent plate 5 connected by a B-stage sealer or an A-stage sealer is provided above the transparent plate 5.
The front and back surfaces of the are coated with a single-layer coating of magnesium fluoride, which is an antireflection film, or a multi-layer coating of SiO / SiO ₂ , zirconium oxide, Ta ₂ O ₅ / Al ₂ O ₃ or the like.

Further, the translucent plate 5 is used instead of the antireflection film.
The light-shielding film 52 may be provided on a portion other than the effective region S of the above, or the light-shielding film 52 may be provided together with the antireflection film. With such a configuration, it is possible to provide the semiconductor device 1 including an optically excellent photocoupler. Become.

[0047]

As described above, the semiconductor device and the method of manufacturing the same of the present invention have the following effects. That is, in this semiconductor device, since a gap is provided between the peripheral edge of the transparent plate and the peripheral edge of the opening, bubbles generated inside the transparent resin embedded in the opening and the transparent plate. It is possible to let air bubbles, which are made up of the air entrained when the device is placed, escape to the outside through this gap. Further, since the light-shielding film is provided on the surface of the light-transmissive plate in a region other than the region corresponding to the effective region of the semiconductor element, the semiconductor element is prevented from being affected by unnecessary diffused reflection due to bubbles in the light-transmissive resin or the bonding wire. I will not receive it. With these,
The semiconductor device has excellent optical characteristics without unevenness in sensitivity of read images and erroneous detection.

Further, according to the method of manufacturing a semiconductor device of the present invention, the translucent resin filled in the opening is pressed by placing the translucent plate, and air bubbles in the translucent resin are removed from the peripheral edge of the translucent plate. Since the air bubbles can be discharged from the gap between the opening and the peripheral edge of the opening, it is possible to improve the manufacturing yield of the semiconductor device having excellent optical characteristics without causing the characteristic defects due to the bubbles.

[Brief description of drawings]

FIG. 1 is a schematic view illustrating a first embodiment of the present invention,
(A) is sectional drawing, (b) is a perspective view.

FIG. 2 is a view (No. 1) for explaining the manufacturing method of the present invention,
(A) is a plan view and (b) is a side sectional view.

FIG. 3 is a diagram (part 2) explaining the manufacturing method of the present invention.

FIG. 4 is a diagram (No. 3) for explaining the manufacturing method of the present invention.

FIG. 5 is a view (No. 4) for explaining the manufacturing method of the present invention, in which (a) is a side sectional view and (b) is a plan view.

6A and 6B are diagrams illustrating a second embodiment of the present invention, in which FIG. 6A is a sectional view and FIG. 6B is a partially enlarged view.

FIG. 7 is a schematic sectional view illustrating a third embodiment of the present invention,
(A) is (No. 1) and (b) is (No. 2).

FIG. 8 is a diagram showing an example of adaptation to another shape, in which (a) is a pin type and (b) is a surface mount type.

FIG. 9 is a schematic cross-sectional view illustrating an example of application to a photo coupler.

FIG. 10 is a sectional view illustrating a conventional example.

[Explanation of symbols]

 1 semiconductor device 2 base 3 frame 4 translucent resin 5 translucent plate 31 opening 32 notch 51 gap

─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. ⁶ Identification code Internal reference number FI Technical indication H01L 23/31 27/14 31/12 A 7210-4M

Claims (11)

[Claims] 1. A base for mounting a semiconductor element substantially in the center, a frame provided on the base and having an opening at least in an upper region of the semiconductor element, and embedded in the opening. What is claimed is: 1. A semiconductor device comprising a translucent resin that seals a semiconductor element mounted on a base, and a translucent plate disposed on the translucent resin, the peripheral edge of the translucent plate and the opening. A semiconductor device characterized in that a gap is provided between the periphery of the semiconductor device and the periphery of the semiconductor device. 2. The frame has cutouts of a predetermined depth facing the openings on both sides of the semiconductor element, and the translucent plate is arranged in the cutouts. The semiconductor device according to claim 1. 3. The semiconductor device according to claim 1, wherein the translucent plate blocks infrared rays from the outside. 4. The semiconductor device according to claim 1, wherein the transparent plate includes an antireflection film. 5. The light-transmitting plate is for blocking infrared rays from the outside, and is provided with an antireflection film at least on a side in contact with the light-transmitting resin. Semiconductor device. 6. A frame having a substantially rectangular opening in a substantially central portion is provided on a base, a semiconductor element is mounted on the base in the opening, and the semiconductor element is covered with a transparent resin. A method of manufacturing a semiconductor device, wherein a transparent plate is arranged on the transparent resin, which comprises:
A notch having a predetermined depth and a width shorter than the corresponding side of the opening and facing the opening are respectively provided, and the translucent resin is filled in the opening with the semiconductor element mounted, Next, a method of manufacturing a semiconductor device, characterized in that the translucent plate having a width substantially equal to the width of the cutout is placed on the step surface while pressing the translucent resin. 7. The method of manufacturing a semiconductor device according to claim 6, wherein, when the translucent resin is filled, it is filled up to a position higher than a step surface of the cutout. 8. A base for mounting a semiconductor element having a predetermined effective area substantially in the center, a frame provided on the base and having an opening in at least an area above the semiconductor element, What is claimed is: 1. A semiconductor device comprising a translucent resin embedded in an opening and sealing a semiconductor element mounted on the base, and a translucent plate disposed on the translucent resin. A semiconductor device, characterized in that a light-shielding film is provided at least on a side of the plate that is in contact with the light-transmissive resin, in a region other than a region corresponding to the effective region of the semiconductor element. 9. The semiconductor device according to claim 8, wherein the transparent plate blocks infrared rays from the outside. 10. The semiconductor device according to claim 8, wherein the transparent plate includes an antireflection film. 11. The light-transmitting plate is for blocking infrared rays from the outside, and is provided with an antireflection film on at least a side in contact with the light-transmitting resin. Semiconductor device.