JPH07183415A - Semiconductor device and manufacture thereof - Google Patents
Semiconductor device and manufacture thereofInfo
- Publication number
- JPH07183415A JPH07183415A JP8780094A JP8780094A JPH07183415A JP H07183415 A JPH07183415 A JP H07183415A JP 8780094 A JP8780094 A JP 8780094A JP 8780094 A JP8780094 A JP 8780094A JP H07183415 A JPH07183415 A JP H07183415A
- Authority
- JP
- Japan
- Prior art keywords
- semiconductor device
- translucent
- resin
- plate
- opening
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32225—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/1515—Shape
- H01L2924/15153—Shape the die mounting substrate comprising a recess for hosting the device
Landscapes
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
【0001】[0001]
【産業上の利用分野】本発明は、透光性樹脂にて半導体
素子を覆いその上に透光板を配置する半導体装置および
その製造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device in which a semiconductor element is covered with a translucent resin and a translucent plate is disposed on the semiconductor element, and a method for manufacturing the same.
【0002】[0002]
【従来の技術】中空パッケージを用いた半導体装置は、
主としてCCDエリアセンサーやCCリニアセンサー等
の光学部品として用いられており、中空部分を介して外
部からの光信号をCCD等から成る半導体素子にて受光
している。また、レーザ素子単体やレーザ光を増幅する
ICを備えた半導体装置では、中空部分内部を介して光
信号を出射している。2. Description of the Related Art A semiconductor device using a hollow package is
It is mainly used as an optical component such as a CCD area sensor or a CC linear sensor, and an optical signal from the outside is received by a semiconductor element such as a CCD via a hollow portion. In addition, in a semiconductor device including a laser element alone or an IC that amplifies laser light, an optical signal is emitted through the inside of the hollow portion.
【0003】中空パッケージから成る半導体装置は、主
に、セラミックスやガラス−エポキシ(以下、ガラエポ
と言う。)樹脂等から成る基台および略中央に開口部を
備え基台上に設けられたフレームと、開口部内の基台上
に搭載される半導体素子と、フレーム上に取付けられる
ガラスやプラスチック等から成る透光板とから構成され
いる。A semiconductor device composed of a hollow package is mainly composed of a base made of ceramics, glass-epoxy (hereinafter referred to as glass epoxy) resin or the like, and a frame provided with an opening at substantially the center and provided on the base. , A semiconductor element mounted on a base in the opening, and a translucent plate made of glass, plastic or the like mounted on the frame.
【0004】透光板は、フレーム上に例えばBステージ
シーラーから成る接着剤を介して取り付けられており、
基台上に搭載された半導体素子を開口部内に気密封止す
るとともに外部からの光をパッケージ内部の半導体素子
まで透過させる役目を果たしている。The translucent plate is mounted on the frame via an adhesive composed of, for example, a B stage sealer,
It serves to hermetically seal the semiconductor element mounted on the base in the opening and to transmit the light from the outside to the semiconductor element inside the package.
【0005】しかし、このような中空パッケージから成
る半導体装置は、透光板を取り付けるBステージシーラ
ー等の接着剤の硬さ管理など製造上の煩わしがあるとと
もに、製造途中でのダストや半導体素子のダイシング時
の切り屑等が中空部内で移動して読み取り画像の欠陥を
招くという不都合が生じてしまう。However, the semiconductor device having such a hollow package has manufacturing troubles such as hardness management of an adhesive such as a B-stage sealer for attaching a light-transmitting plate, and dust and semiconductor elements during the manufacturing process. This causes a problem that chips and the like during dicing move in the hollow portion and cause defects in the read image.
【0006】そこで、中空パッケージにおける中空部内
に、例えば紫外線硬化型樹脂、紫外線と加熱とにより硬
化する樹脂、エポキシ系加熱硬化樹脂、シリコーン系加
熱硬化樹脂、またはシリコーン系UV硬化型樹脂から成
る透光性樹脂を充填することが考えられている。さら
に、この透光性樹脂の硬化収縮によって生じる表面のし
わの問題や、基台との線膨張率の違いに基づく割れを緩
和するためやわらかい透光性樹脂を用いた場合のきずの
問題等を解消するため、透光性樹脂の表面をガラスや透
明プラスチック等の透光板でカバーした半導体装置が考
えられている。Therefore, in the hollow portion of the hollow package, for example, an ultraviolet-curable resin, a resin curable by heat with ultraviolet rays, an epoxy-based thermosetting resin, a silicone-based thermosetting resin, or a silicone-based UV-curable resin is used as a light-transmitting material. It has been considered to fill the resin with a resin. In addition, the problem of wrinkles on the surface caused by the curing shrinkage of the translucent resin, the problem of scratches when using a soft translucent resin to alleviate cracks due to the difference in linear expansion coefficient from the base, etc. In order to solve the problem, a semiconductor device in which the surface of a transparent resin is covered with a transparent plate such as glass or transparent plastic is considered.
【0007】図10は、このような半導体装置を説明す
る断面図である。すなわち、この半導体装置1は、主と
して、セラミックスやガラエポ樹脂等から成る基台2お
よび開口部31を備えたフレーム3と、開口部31内の
基台2上に搭載される半導体素子10と、開口部31内
に充填して半導体素子10を封止する透光性樹脂4と、
フレーム3上に取り付けられ透光性樹脂4をカバーする
透光板5とから構成されている。FIG. 10 is a sectional view for explaining such a semiconductor device. That is, the semiconductor device 1 is mainly composed of a frame 2 having a base 2 and an opening 31 made of ceramics or glass epoxy resin, a semiconductor element 10 mounted on the base 2 in the opening 31, and an opening. A translucent resin 4 which is filled in the portion 31 to seal the semiconductor element 10;
It is composed of a transparent plate 5 mounted on the frame 3 and covering the transparent resin 4.
【0008】この半導体装置1を製造するには、先ず、
基台2上に半導体素子10をダイボンド用ペースト材を
介して搭載し、ボンディングワイヤー6を用いて半導体
素子10とリード7との電気的な導通を得る。次に、開
口部31内に、先に述べたような透光性樹脂4をポッテ
ィングして半導体素子10およびボンディングワイヤー
6の周囲を覆う。この状態でフレーム3の上面に透光板
5を載置して透光板5と透光性樹脂4とを密着し、その
後、透光性樹脂4を紫外線や加熱により硬化させる。こ
れにより、きずに強くしかも表面にしわのない半導体装
置1が製造できることになる。In order to manufacture this semiconductor device 1, first,
The semiconductor element 10 is mounted on the base 2 via a die-bonding paste material, and the bonding wire 6 is used to electrically connect the semiconductor element 10 and the leads 7. Next, the translucent resin 4 as described above is potted inside the opening 31 to cover the periphery of the semiconductor element 10 and the bonding wire 6. In this state, the transparent plate 5 is placed on the upper surface of the frame 3 to bring the transparent plate 5 and the transparent resin 4 into close contact with each other, and then the transparent resin 4 is cured by ultraviolet rays or heating. This makes it possible to manufacture the semiconductor device 1 that is strong against scratches and has no wrinkles on the surface.
【0009】[0009]
【発明が解決しようとする課題】しかしながら、このよ
うな半導体装置およびその製造方法には次のような問題
がある。すなわち、図10に示す半導体装置1において
は、フレーム3の上面に透光板5を取り付けることで透
光性樹脂4が充填された開口部31内を密閉状態として
いるため、透光性樹脂4をポッティングする際に生じた
透光性樹脂4内の気泡41も一緒に封じ込められてしま
う。また、透光板5をフレーム3上に取り付ける際に透
光板5と透光性樹脂4との間に空気を巻き込んでしまっ
たり、透光性樹脂4を硬化させる際の発生ガスが透光板
5の近傍に気泡41として溜まってしまう。However, such a semiconductor device and its manufacturing method have the following problems. That is, in the semiconductor device 1 shown in FIG. 10, the transparent plate 5 is attached to the upper surface of the frame 3 to seal the inside of the opening 31 filled with the transparent resin 4, so that the transparent resin 4 is formed. The air bubbles 41 in the translucent resin 4 generated during the potting are also enclosed together. Further, when the translucent plate 5 is mounted on the frame 3, air is trapped between the translucent plate 5 and the translucent resin 4, or the gas generated when the translucent resin 4 is cured is translucent. Air bubbles 41 accumulate near the plate 5.
【0010】このような気泡41が透光性樹脂4内に溜
まっていると、半導体素子10による読み取り画像の感
度むらや誤検出等の光学的な不具合を生じることにな
り、半導体装置1の不良品を出してしまうことになる。
また、透光性樹脂4内のボンディングワイヤー6に光が
当たった場合にも乱反射が起こり、半導体素子10へ光
学的な影響を与えることになる。よって、本発明は光学
的特性に優れかつ製造歩留りの向上を図れる半導体装置
およびその製造方法を提供することを目的とする。If such bubbles 41 are accumulated in the translucent resin 4, optical defects such as uneven sensitivity of the image read by the semiconductor element 10 and erroneous detection will occur, and the semiconductor device 1 will not operate properly. You will end up with a good product.
Further, even when the bonding wire 6 in the translucent resin 4 is exposed to light, diffuse reflection occurs, and the semiconductor element 10 is optically affected. Therefore, an object of the present invention is to provide a semiconductor device excellent in optical characteristics and capable of improving a manufacturing yield, and a manufacturing method thereof.
【0011】[0011]
【課題を解決するための手段】本発明は、このような課
題を解決するために成された半導体装置およびその製造
方法である。すなわち、この半導体装置は、略中央に半
導体素子を搭載するための基台と、基台上に設けられ少
なくとも半導体素子の上方領域に開口部を備えたフレー
ムと、開口部内に埋め込まれて基台に搭載された半導体
素子を封止する透光性樹脂と、透光性樹脂上に配置され
る透光板とから成るものであり、透光板の周縁と開口部
の周縁との間に隙間を備えた構成となっている。また、
このような隙間を備えた半導体装置であって、半導体素
子を中心としたフレームの両側に開口部と臨む所定深さ
の切欠部を備え、この切欠部に透光板を配置したもので
もある。SUMMARY OF THE INVENTION The present invention is a semiconductor device and a method of manufacturing the same which are made to solve such problems. That is, this semiconductor device includes a base for mounting a semiconductor element at substantially the center, a frame provided on the base with an opening in at least an upper region of the semiconductor element, and a base embedded in the opening. A transparent resin for sealing the semiconductor element mounted on the transparent resin, and a transparent plate arranged on the transparent resin. A gap is provided between the peripheral edge of the transparent plate and the peripheral edge of the opening. It is configured with. Also,
A semiconductor device having such a gap is also provided with notches having a predetermined depth facing the opening on both sides of the frame centering on the semiconductor element, and the translucent plate being arranged in the notches.
【0012】しかも、透光板が赤外線を遮断したり、反
射防止膜を備えていたり、この両方を備えたものでもあ
る。さらに、本発明の半導体装置は、所定の有効領域を
備えた半導体素子を略中央に搭載するための基台と、基
台上に設けられ少なくとも半導体素子の上方領域に開口
部を備えたフレームと、開口部内に埋め込まれて基台に
搭載された半導体素子を封止する透光性樹脂と、透光性
樹脂上に配置される透光板と、透光板の表面で半導体素
子の有効領域と対応する部分以外の領域に設けられた遮
光膜とから構成されるものでもある。また、この半導体
装置の透光板として、赤外線を遮断したり、反射防止膜
を備えていたり、この両方を備えたものでもある。Moreover, the transparent plate may block infrared rays, may be provided with an antireflection film, or may be provided with both of them. Further, the semiconductor device of the present invention includes a base for mounting a semiconductor element having a predetermined effective area substantially in the center, and a frame provided on the base and having an opening at least in an upper area of the semiconductor element. , A transparent resin that is embedded in the opening and seals the semiconductor element mounted on the base, a transparent plate disposed on the transparent resin, and an effective area of the semiconductor element on the surface of the transparent plate. And a light-shielding film provided in a region other than the portion corresponding to. In addition, as a transparent plate of this semiconductor device, it may block infrared rays, have an antireflection film, or have both of them.
【0013】また、本発明の半導体装置の製造方法は、
略中央に略四角形の開口部を備えたフレームを基台上に
設け、この開口部内の基台上に半導体素子を搭載して透
光性樹脂で覆い、この透光性樹脂上に透光板を配置する
製造方法であって、予め、開口部を中心としたフレーム
の両側に、開口部と臨みかつ開口部の対応辺よりも短い
幅で所定深さの切欠部をそれぞれ設けておき、半導体素
子を搭載した状態で開口部内に透光性樹脂を充填し、そ
の後切欠部の幅とほぼ等しい幅の透光板を、透光性樹脂
を押圧しながら切欠部の段差面に載置したり、また、透
光性樹脂を充填する際に切欠部の段差面よりも高い位置
まで充填するようにした方法である。A method of manufacturing a semiconductor device according to the present invention is
A frame having a substantially rectangular opening in the approximate center is provided on a base, a semiconductor element is mounted on the base in the opening and covered with a translucent resin, and a translucent plate is placed on the translucent resin. In the manufacturing method of disposing, a notch having a predetermined depth and a width shorter than a corresponding side of the opening is provided on both sides of the frame centering on the opening, respectively. Filling the opening with a translucent resin with the element mounted, and then placing a translucent plate with a width almost equal to the width of the notch on the stepped surface of the notch while pressing the translucent resin. Further, it is a method in which, when the translucent resin is filled, it is filled up to a position higher than the step surface of the notch.
【0014】[0014]
【作用】本発明の半導体装置においては、開口部内に埋
め込んだ透光性樹脂上に配置する透光板の周縁と開口部
の周縁との間に隙間が設けられており、この隙間を介し
て透光性樹脂内で発生した気泡が外部へ逃げるようにな
る。さらに、半導体素子を中心としたフレームの両側に
設けられた開口部を臨む所定深さの切欠部により、透光
板の配置高さと配置位置とを決めることができるように
なる。また、透光板として外部からの赤外線を遮断でき
るものを用いたり、反射防止膜を備えたりすることで不
要な光が半導体素子へ到達するのを防いでいる。しか
も、透光板の少なくとも透光性樹脂と接触する側で半導
体素子の有効領域と対応する部分以外の領域に遮光膜が
設けられていることで、半導体素子の有効領域以外から
の光を遮断することができる。このため、有効領域以外
の透光性樹脂内に発生している気泡やボンディングワイ
ヤーに光が当たらず乱反射が発生しなくなる。In the semiconductor device of the present invention, a gap is provided between the peripheral edge of the transparent plate disposed on the transparent resin embedded in the opening and the peripheral edge of the opening. Bubbles generated in the translucent resin will escape to the outside. Further, the height and the position of the light-transmissive plate can be determined by the notches having a predetermined depth, which face the openings provided on both sides of the frame centering on the semiconductor element. Further, by using a transparent plate capable of blocking infrared rays from the outside or providing an antireflection film, unnecessary light is prevented from reaching the semiconductor element. In addition, the light-shielding film is provided at least on the side of the light-transmitting plate that is in contact with the light-transmitting resin, in a region other than the region corresponding to the effective region of the semiconductor element, so that light from outside the effective region of the semiconductor element is blocked can do. For this reason, light does not hit the bubbles and bonding wires generated in the translucent resin other than the effective area, and diffuse reflection does not occur.
【0015】また、この半導体装置の製造方法において
は、予め、フレームの両側に開口部と臨みかつ開口部の
対応辺よりも短い幅の所定深さの切欠部を設けているた
め、この切欠部の幅とほぼ等しい幅の透光板をこの段差
面に載置することで、開口部の周縁と透光板の周縁との
間に隙間が生じるようになる。さらに、透光板を切欠部
の段差面に搭載することで透光性樹脂を押圧すれば、透
光性樹脂内の気泡が押されて隙間から排出するようにな
る。また、透光性樹脂をこの切欠部の段差面よりも高い
位置まで充填しておけば、透光板を載置する作業ととも
に透光性樹脂が押圧されて気泡を排出できるようにな
る。Further, in this method of manufacturing a semiconductor device, since the notch is provided in advance on both sides of the frame so as to face the opening and have a predetermined depth and a width shorter than the corresponding side of the opening. By mounting a light-transmitting plate having a width substantially equal to that on the step surface, a gap is created between the peripheral edge of the opening and the peripheral edge of the transparent plate. Further, when the translucent resin is pressed by mounting the translucent plate on the stepped surface of the notch, the bubbles in the translucent resin are pressed and discharged from the gap. If the translucent resin is filled up to a position higher than the stepped surface of the cutout, the translucent resin is pressed and air bubbles can be discharged during the work of placing the translucent plate.
【0016】[0016]
【実施例】以下に、本発明の半導体装置およびその製造
方法の実施例を図に基づいて説明する。図1は、本発明
の半導体装置の第1実施例を説明する概略図であり、
(a)は断面図、(b)は斜視図である。なお、以下の
本実施例においては説明を分かりやすくするためにCC
Dリニアセンサーから成る半導体装置1を一例として説
明する。Embodiments of the semiconductor device and the method of manufacturing the same according to the present invention will be described below with reference to the drawings. FIG. 1 is a schematic diagram illustrating a first embodiment of a semiconductor device of the present invention.
(A) is sectional drawing, (b) is a perspective view. In the following example, CC is
The semiconductor device 1 including the D linear sensor will be described as an example.
【0017】すなわち、第1実施例における半導体装置
1は、主として、略中央に半導体素子10を搭載するた
めの基台2と、基台2上に設けられ少なくとも半導体素
子10の上方領域に略長方形の開口部31を備えたフレ
ーム3と、開口部31内に埋め込まれた透光性樹脂4
と、透光性樹脂4上に配置されるガラスやプラスチック
等の透光板5とから構成されており、さらに、透光板5
の周縁と開口部31の周縁との間に所定幅の隙間51が
設けられたものである。That is, the semiconductor device 1 according to the first embodiment is mainly composed of a base 2 for mounting the semiconductor element 10 substantially in the center, and a substantially rectangular shape provided on the base 2 and at least in an upper region of the semiconductor element 10. The frame 3 having the opening 31 and the translucent resin 4 embedded in the opening 31.
And a transparent plate 5 such as glass or plastic disposed on the transparent resin 4, and the transparent plate 5
A gap 51 having a predetermined width is provided between the peripheral edge of and the peripheral edge of the opening 31.
【0018】また、この半導体装置1は、透光板5を配
置するため例えばフレーム3の半導体素子10を中心と
した両側に開口部31と臨む所定深さの切欠部32が設
けられており、この切欠部32にて透光板5を位置決め
できるようになっている。Further, the semiconductor device 1 is provided with notches 32 of a predetermined depth facing the opening 31 on both sides of the semiconductor element 10 of the frame 3 for arranging the transparent plate 5, The translucent plate 5 can be positioned by the notch 32.
【0019】このように、透光板5の周縁と開口部31
の周縁との間に隙間51が設けられていることで、透光
性樹脂4内で発生したガス等から成る気泡41(図10
参照)が隙間51を介して外部へ逃げるようになる。さ
らに、切欠部32に透光板5を配置することで、リード
7と接続されるボンディングワイヤー6と透光板5の下
面との距離を正確に維持することができるとともに、透
光板5の回転方向に対する位置を規制することができ
る。As described above, the peripheral edge of the transparent plate 5 and the opening 31.
Since the gap 51 is provided between the air bubble 41 and the peripheral edge of the light-transmitting resin 4, bubbles 41 (FIG.
(See) escapes to the outside through the gap 51. Furthermore, by disposing the translucent plate 5 in the cutout 32, the distance between the bonding wire 6 connected to the lead 7 and the lower surface of the translucent plate 5 can be accurately maintained, and at the same time, the translucent plate 5 can be maintained. The position with respect to the rotation direction can be regulated.
【0020】次に、このような半導体装置1の製造方法
を図2〜図5に基づいて順に説明する。先ず、図2
(a)に示すように、フレーム3の例えば図面上の左右
両側に開口部31と臨む切欠部32を予め設けておく。
切欠部32は、対応する開口部31の辺の長さHよりも
短い幅hで、しかも図2(b)に示すようにその上面か
ら深さDを有している。Next, a method of manufacturing such a semiconductor device 1 will be described in order with reference to FIGS. First, FIG.
As shown in (a), notches 32 facing the opening 31 are provided in advance on the left and right sides of the frame 3 in the drawing, for example.
The notch 32 has a width h shorter than the length H of the side of the corresponding opening 31, and has a depth D from the upper surface thereof as shown in FIG. 2B.
【0021】次に、このような基台2およびフレーム3
を用いて図3に示すように、半導体素子10の搭載を行
う。すなわち、基台2の略中央に設けられた凹部に銀ペ
ースト等を介して半導体素子10を搭載し、ボンディン
グワイヤー6を用いて半導体素子10とリード7との電
気的な接続を行う。これにより、半導体素子10および
ボンディングワイヤー6はフレーム3の略中央の開口部
31内に収納された状態となる。Next, such base 2 and frame 3
As shown in FIG. 3, the semiconductor element 10 is mounted using. That is, the semiconductor element 10 is mounted in a recess provided in the substantial center of the base 2 through a silver paste or the like, and the bonding wire 6 is used to electrically connect the semiconductor element 10 and the lead 7. As a result, the semiconductor element 10 and the bonding wire 6 are housed in the opening 31 at the substantially center of the frame 3.
【0022】次に、図4に示すように、半導体素子10
およびボンディングワイヤー6が収納された開口部31
内に透光性樹脂4をポッティングする。透光性樹脂4は
従来と同様に紫外線硬化型樹脂、紫外線と加熱とにより
硬化する樹脂、エポキシ系加熱硬化樹脂、シリコーン系
加熱硬化樹脂、またはシリコーン系UV硬化型樹脂等の
紫外線や加熱によって硬化する材質を用いており、この
透光性樹脂4を充填するにあたり、例えば切欠部32の
段差面32aよりも若干高い位置まで充填する。なお、
透光性樹脂4をポッティングした後には、従来と同様に
透光性樹脂4内に気泡41(図10参照)が溜まってい
る場合があるが、後述する工程において排出できる。Next, as shown in FIG.
And the opening 31 in which the bonding wire 6 is housed
The transparent resin 4 is potted inside. The translucent resin 4 is cured by ultraviolet rays or heat, such as an ultraviolet curable resin, a resin that is cured by ultraviolet rays and heat, an epoxy-based thermosetting resin, a silicone-based thermosetting resin, or a silicone-based UV curable resin, as in the conventional case. The transparent resin 4 is filled up to a position slightly higher than the step surface 32a of the notch 32, for example. In addition,
After potting the translucent resin 4, air bubbles 41 (see FIG. 10) may remain in the translucent resin 4 as in the conventional case, but they can be discharged in a step described later.
【0023】次に、図5に示すように、予めフレーム3
に設けておいた切欠部32の段差面32aに切欠部32
の幅とほぼ等しい幅の透光板5を載置する。透光板5
は、ほうけい酸系等の板ガラスやアクリル、ポリカーボ
ネート等のプラスチック板が用いられる。先に説明した
ように、切欠部32の幅hは対応する開口部31の辺の
長さHよりも短いため(図5(b)参照)、この幅hと
ほぼ等しい幅の透光板5を切欠部32に載置することで
透光板5の周縁と開口部31の周縁との間に隙間51が
形成される。Next, as shown in FIG.
The notch 32 is provided on the step surface 32a of the notch 32 provided in
The translucent plate 5 having a width substantially equal to the width is placed. Translucent plate 5
A plate glass of borosilicate or the like or a plastic plate of acrylic, polycarbonate or the like is used as the material. As described above, since the width h of the cutout 32 is shorter than the length H of the side of the corresponding opening 31 (see FIG. 5B), the translucent plate 5 having a width substantially equal to this width h. Is placed in the notch 32, a gap 51 is formed between the peripheral edge of the transparent plate 5 and the peripheral edge of the opening 31.
【0024】さらに、この透光板5を載置することによ
り、開口部31内に充填された透光性樹脂4が押圧され
ることになる。つまり、透光性樹脂4を段差面32aよ
りも若干高い位置まで塗布しておけば、透光板5の載置
作業とともに透光板5の下面によって透光性樹脂4を押
圧することができる。Further, by mounting the transparent plate 5, the transparent resin 4 filled in the opening 31 is pressed. That is, if the translucent resin 4 is applied to a position slightly higher than the step surface 32a, the translucent resin 4 can be pressed by the lower surface of the translucent plate 5 while the translucent plate 5 is placed. .
【0025】なお、透光性樹脂4を段差面32aよりも
高い位置に充填しない場合には、透光板5を載置した際
にその下面が段差面32aよりも下に配置されるような
凸部(光学的に悪影響がないものとする)を設けておく
ことで透光板5の載置とともに透光性樹脂4を押圧する
ことができるようになる。If the transparent resin 4 is not filled in a position higher than the step surface 32a, the lower surface of the transparent plate 5 is placed below the step surface 32a when the transparent plate 5 is placed. By providing the convex portion (provided that it has no optical adverse effect), the translucent resin 4 can be pressed while the translucent plate 5 is placed.
【0026】このように透光板5を載置した段階で透光
性樹脂4を押圧することにより、その圧力で透光性樹脂
4中のポッティングした際に生じた気泡41(図10参
照)を追い出すことができる。そして、追い出された気
泡41(図10参照)は、透光板5の周縁と開口部31
の周縁との間に設けられた隙間51から外部に排出され
る。By pressing the translucent resin 4 at the stage where the translucent plate 5 is placed in this manner, bubbles 41 generated during potting in the translucent resin 4 by the pressure (see FIG. 10). Can be driven out. Then, the expelled bubbles 41 (see FIG. 10) are generated in the peripheral edge of the transparent plate 5 and the opening 31.
It is discharged to the outside through a gap 51 provided between the outer periphery of the sheet.
【0027】透光板5を載置した状態で、透光板5の下
面とボンディングワイヤー6のアーチとの間は間隔dと
なる。ボンディングワイヤー6のアーチ高さが一定の場
合、この間隔dは切欠部32の深さD(図2(b)参
照)によって決まる。すなわち、フレーム3に切欠部3
2を設ける段階で、間隔dに応じた深さDを設定してお
くようにする。With the translucent plate 5 placed, there is a distance d between the lower surface of the translucent plate 5 and the arch of the bonding wire 6. When the arch height of the bonding wire 6 is constant, this distance d is determined by the depth D of the notch 32 (see FIG. 2B). That is, the notch 3 is formed in the frame 3.
At the stage of providing 2, the depth D is set according to the distance d.
【0028】このように透光板5を載置した後、所定量
の紫外線や所定温度の加熱を行って透光性樹脂4を硬化
し、透光板5をフレーム3および透光性樹脂4上に接続
する。この透光性樹脂4の硬化の際に内部でガスが発生
しても、そのガスは透光板5の周縁と開口部31の周縁
との間に設けられた隙間51から排出されることにな
る。これにより、透光性樹脂4の内部に気泡41(図1
0参照)が存在しない半導体装置1を製造することがで
きる。After the translucent plate 5 is placed in this manner, the translucent resin 4 is cured by heating a predetermined amount of ultraviolet rays or a predetermined temperature, and the translucent plate 5 is fixed to the frame 3 and the translucent resin 4. Connect on. Even if a gas is generated inside during the curing of the translucent resin 4, the gas is discharged from the gap 51 provided between the peripheral edge of the transparent plate 5 and the peripheral edge of the opening 31. Become. As a result, bubbles 41 (see FIG. 1) are formed inside the transparent resin 4.
It is possible to manufacture the semiconductor device 1 in which there is no (see 0).
【0029】次に、本発明の半導体装置1の第2実施例
を図6に基づいて説明する。すなわち、第2実施例にお
ける半導体装置1は、透光板5の上面がフレーム3の上
面よりも下に配置されるよう透光板5を配置したもので
ある。これにより、透光板5の下面とボンディングワイ
ヤー6のアーチとの間隔d’が、図5(a)に示す間隔
dよりも小さくなる。つまり、図2(b)に示す切欠部
32の深さDを先に説明した実施例の場合よりも深くす
ることで間隔d’を小さくすることができる。Next, a second embodiment of the semiconductor device 1 of the present invention will be described with reference to FIG. That is, in the semiconductor device 1 according to the second embodiment, the transparent plate 5 is arranged such that the upper surface of the transparent plate 5 is arranged below the upper surface of the frame 3. As a result, the distance d'between the lower surface of the transparent plate 5 and the arch of the bonding wire 6 becomes smaller than the distance d shown in FIG. That is, the distance d ′ can be reduced by making the depth D of the cutout portion 32 shown in FIG. 2B deeper than in the case of the embodiment described above.
【0030】この間隔d’はなるべく小さい方が望まし
い。すなわち、透光板5の配置位置が低くなることで開
口部31内を埋め込むための透光性樹脂4の量を少なく
することができるとともに、透光性樹脂4の硬化の際に
発生するいわゆる樹脂内のひけやすじ等から成る半導体
素子10の画質不良を低減することができる。It is desirable that this distance d'is as small as possible. That is, since the arrangement position of the transparent plate 5 is lowered, the amount of the transparent resin 4 for filling the inside of the opening 31 can be reduced, and so-called what occurs when the transparent resin 4 is cured. It is possible to reduce the image quality defect of the semiconductor element 10 made of sink marks and streaks in the resin.
【0031】さらに、透光板5の配置位置を低くするこ
とで透光板5の側面5aのほとんどを透光性樹脂4内に
埋め込むことができる(図6(b)の部分拡大図参
照)。このように透光板5の側面5aが透光性樹脂4に
て埋まることによって、透光板5を製造する際の糸面取
りやC面取りの処理を施す必要がなくなり、透光板5の
製造における大幅な簡素化を図ることができる。Further, by lowering the arrangement position of the transparent plate 5, most of the side surface 5a of the transparent plate 5 can be embedded in the transparent resin 4 (see a partially enlarged view of FIG. 6B). . By thus filling the side surface 5a of the translucent plate 5 with the translucent resin 4, there is no need to perform thread chamfering or C chamfering when manufacturing the translucent plate 5, and the translucent plate 5 is manufactured. It is possible to greatly simplify the above.
【0032】また、第1実施例および第2実施例におけ
る半導体装置1において、透光板5として外部からの赤
外線を遮断できるものを用いてもよい。例えば、透光板
5を燐酸ガラスにて形成したり、通常のほうけい酸系等
から成る板ガラスに燐酸ガラスを紫外線硬化型接着剤に
て張り合わせて構成することで、赤外線を遮断できるよ
うになる。Further, in the semiconductor device 1 in the first and second embodiments, the light transmitting plate 5 may be one that can block infrared rays from the outside. For example, it is possible to block infrared rays by forming the translucent plate 5 with phosphoric acid glass, or by laminating phosphoric acid glass with a UV curable adhesive on a normal plate glass made of borosilicate or the like. .
【0033】さらに、透光板5に反射防止膜を設けても
よい。例えば、フッ化マグネシウムの単層コート、Si
O/SiO2 や酸化ジルコニウム、Ta2 O5 /Al2
O3等から成る多層コートを透光板5に施すことで不要
な反射を防止できるようになる。また、上記の燐酸ガラ
スを用いた透光板5に反射防止膜を施すことで赤外線の
遮断と不要な反射の防止を可能とするとともに、燐酸ガ
ラスから成る透光板5の透光性樹脂4との密着性向上お
よび燐酸ガラスからの水分との反応で生成された燐酸の
侵入による内部配線の腐食防止が可能となる。Further, the light transmitting plate 5 may be provided with an antireflection film. For example, a single layer coating of magnesium fluoride, Si
O / SiO 2 , zirconium oxide, Ta 2 O 5 / Al 2
By applying a multi-layer coating made of O 3 or the like to the transparent plate 5, unnecessary reflection can be prevented. Further, by applying an antireflection film to the light-transmitting plate 5 made of the above-mentioned phosphate glass, it becomes possible to block infrared rays and prevent unnecessary reflection, and at the same time, the light-transmitting resin 4 of the light-transmitting plate 5 made of phosphate glass is used. It is possible to improve the adhesion to the inner wiring and prevent corrosion of the internal wiring due to invasion of phosphoric acid generated by the reaction with water from the phosphate glass.
【0034】次に、本発明の第3実施例における半導体
装置1を図7の概略断面図に基づいて説明する。すなわ
ち、第3実施例における半導体装置1は、透光板5の表
面で半導体素子10の有効領域Sと対応する部分以外の
領域に遮光膜52が備えられているものである。Next, the semiconductor device 1 according to the third embodiment of the present invention will be described with reference to the schematic sectional view of FIG. That is, in the semiconductor device 1 according to the third embodiment, the light shielding film 52 is provided on the surface of the transparent plate 5 in a region other than the portion corresponding to the effective region S of the semiconductor element 10.
【0035】図7(a)は第3実施例(その1)を示す
ものであり、この半導体装置1は、略中央に半導体素子
10を搭載するための基台2と、基台2上に設けられ開
口部31を備えたフレーム3と、開口部31内に埋め込
まれ透光性樹脂4と、フレーム3との間で所定の隙間5
1を開けて配置される透光板5とから構成され、この透
光板5の少なくとも透光性樹脂4と接触する側で半導体
素子10の有効領域Sと対応する部分以外の領域にクロ
ムやモリブデン等から成る遮光膜52が設けられてい
る。FIG. 7A shows a third embodiment (No. 1). This semiconductor device 1 has a base 2 on which the semiconductor element 10 is mounted substantially at the center, and a base 2 on the base 2. A predetermined gap 5 is provided between the frame 3 provided with the opening 31 and the translucent resin 4 embedded in the opening 31 and the frame 3.
1 and the light-transmissive plate 5 arranged so as to be opened. At least on the side of the light-transmissive plate 5 that is in contact with the light-transmissive resin 4, chrome or A light shielding film 52 made of molybdenum or the like is provided.
【0036】この半導体装置1においては、透光板5を
載置する際に気泡を隙間51から外部へ逃がすことがで
きるとともに、遮光膜52によって半導体素子10とリ
ード7とを接続するボンディングワイヤー6に不要な光
が当たらなくなる。このため、気泡やボンディングワイ
ヤー6による光の乱反射を抑制でき、半導体素子10に
必要な光のみを伝えることができる。In this semiconductor device 1, when the transparent plate 5 is placed, the bubbles can escape to the outside from the gap 51, and the bonding wire 6 for connecting the semiconductor element 10 and the lead 7 with the light shielding film 52. The unnecessary light does not hit the. Therefore, it is possible to suppress irregular reflection of light by the bubbles and the bonding wire 6, and it is possible to transmit only the necessary light to the semiconductor element 10.
【0037】また、図7(b)は第3実施例(その2)
を示すものであり、図7(a)に示す半導体装置1のよ
うにフレーム3と透光板5との間に隙間51が設けられ
ていない構成となっている。このような半導体装置1で
あっても透光板5の少なくとも透光性樹脂4と接触する
側で半導体素子10の有効領域Sと対応する部分以外の
領域に先と同様な遮光膜52を設けておく。FIG. 7B shows the third embodiment (part 2).
7A, the semiconductor device 1 shown in FIG. 7A has no gap 51 between the frame 3 and the transparent plate 5. Even in such a semiconductor device 1, the same light-shielding film 52 as that described above is provided in a region of the light-transmitting plate 5 that is in contact with at least the light-transmitting resin 4 in a region other than a portion corresponding to the effective region S of the semiconductor element 10. Keep it.
【0038】すなわち、この半導体装置1ではフレーム
3と透光板5との間に所定の隙間51(図7(a)参
照)が設けられていないため透光板5の載置の際に気泡
が生じてしまう。ところが、開口部31内に透光性樹脂
4をポッティングした際には中央部分がその表面張力に
よって盛り上がる状態となり、透光板5を透光性樹脂4
の上に載置する場合には透光板5の中央部分から外側に
向けて透光性樹脂4と接触していくため、気泡は透光板
5の外側部分すなわちフレーム3に近い部分に多く発生
する。That is, in this semiconductor device 1, since a predetermined gap 51 (see FIG. 7A) is not provided between the frame 3 and the light transmitting plate 5, bubbles are not formed when the light transmitting plate 5 is placed. Will occur. However, when the translucent resin 4 is potted in the opening 31, the central portion of the translucent resin 4 rises due to the surface tension, and the translucent plate 5 is attached to the translucent resin 4.
When it is placed on the transparent plate 5, air bubbles contact the transparent resin 4 from the central part of the transparent plate 5 toward the outside, so that many bubbles are present in the outer part of the transparent plate 5, that is, the part close to the frame 3. Occur.
【0039】この透光板5のフレーム3に近い部分は半
導体素子10の有効領域Sと対応する部分以外の領域で
あり、ここには遮光膜52が設けられている。このた
め、透光性樹脂4内に気泡が発生していても遮光膜52
によって光が遮断されて気泡に当たらず乱反射が発生し
ない。しかも、透光性樹脂4内のボンディングワイヤー
6にも光が当たらず、ここからの乱反射も発生しないこ
とになる。A portion of the transparent plate 5 near the frame 3 is a region other than a portion corresponding to the effective region S of the semiconductor element 10, and a light shielding film 52 is provided here. Therefore, even if bubbles are generated in the transparent resin 4, the light shielding film 52
The light is blocked by the light and does not hit the bubbles, so that diffuse reflection does not occur. In addition, the bonding wire 6 in the translucent resin 4 is not exposed to light, and diffuse reflection from here does not occur.
【0040】また、図7(a)に示す第3実施例(その
1)、図7(b)に示す第3実施例(その2)のいずれ
においても、透光板5を燐酸ガラスにて形成したり、通
常のほうけい酸系等から成る板ガラスに燐酸ガラスを紫
外線硬化型接着剤にて張り合わせて構成することで、外
部からの赤外線を遮断できるようになる。しかも、透光
板5として燐酸ガラスを用いた場合であっても先に説明
したクロム等から成る遮光膜52が設けられているた
め、燐酸ガラスに侵入した水分と反応して生成された燐
酸がこの遮光膜52にて遮断され透光性樹脂4内へ混入
するのを低減できる。Further, in both the third embodiment (No. 1) shown in FIG. 7A and the third embodiment (No. 2) shown in FIG. 7B, the translucent plate 5 is made of phosphate glass. It is possible to block infrared rays from the outside by forming or by bonding a glass plate made of a normal borosilicate or the like and a phosphoric acid glass with an ultraviolet curing adhesive. Moreover, even when phosphoric acid glass is used as the light-transmitting plate 5, since the light-shielding film 52 made of chromium or the like as described above is provided, the phosphoric acid generated by reacting with the moisture invading the phosphoric acid glass is generated. It is possible to reduce the amount of light that is blocked by the light shielding film 52 and is mixed into the transparent resin 4.
【0041】さらに、透光板5に反射防止膜を設けても
よい。例えば、フッ化マグネシウムの単層コート、Si
O/SiO2 や酸化ジルコニウム、Ta2 O5 /Al2
O3等から成る多層コートを透光板5に施すことで不要
な反射を防止できるようになる。また、上記の燐酸ガラ
スを用いた透光板5に反射防止膜を施すことで赤外線の
遮断と不要な反射の防止を可能とするとともに、燐酸ガ
ラスから成る透光板5の透光性樹脂4との密着性向上お
よび燐酸ガラスと水分との反応で生成された燐酸による
内部配線の腐食防止が可能となる。Further, the light transmitting plate 5 may be provided with an antireflection film. For example, a single layer coating of magnesium fluoride, Si
O / SiO 2 , zirconium oxide, Ta 2 O 5 / Al 2
By applying a multi-layer coating made of O 3 or the like to the transparent plate 5, unnecessary reflection can be prevented. Further, by applying an antireflection film to the light-transmitting plate 5 made of the above-mentioned phosphate glass, it becomes possible to block infrared rays and prevent unnecessary reflection, and at the same time, the light-transmitting resin 4 of the light-transmitting plate 5 made of phosphate glass is used. It is possible to improve the adhesion to the inner wiring and prevent corrosion of the internal wiring due to the phosphoric acid generated by the reaction between the phosphate glass and the water.
【0042】また、図8は本発明の他の形状への適応例
を示す図であり、(a)はピン型、(b)は表面実装型
を示している。例えば、図8(a)に示す半導体装置1
においては、ガラエポ樹脂から成る基台2を用いてお
り、その基台2にSn等のめっき処理が施されたピン7
1が挿入されたものである。このようなガラエポ樹脂か
ら成る基台2を製造する際、先に説明したような切欠部
32(図2参照)を形成しておけばピン型であっても透
光性樹脂4の内部に気泡41(図10参照)が存在しな
い半導体装置1を製造することができる。FIG. 8 is a diagram showing an example of application of the present invention to another shape, wherein (a) shows a pin type and (b) shows a surface mount type. For example, the semiconductor device 1 shown in FIG.
In the above, a base 2 made of glass epoxy resin is used, and a pin 7 plated with Sn or the like is applied to the base 2.
1 is inserted. When the base 2 made of such glass epoxy resin is manufactured, if the notch 32 (see FIG. 2) described above is formed, even if it is a pin type, air bubbles are generated inside the transparent resin 4. The semiconductor device 1 in which 41 (see FIG. 10) does not exist can be manufactured.
【0043】また、図8(b)に示す半導体装置1にお
いては、先と同様にガラエポ樹脂から成る基台2が用い
られており、この基台2に貫通導体72aおよび貫通導
体72aと導通する裏面電極72が形成されたものであ
る。この基台2の製造時に切欠部32(図2参照)を設
けておくようにすれば、表面実装型であっても先と同様
に透光性樹脂4の内部に気泡41(図10参照)が存在
しない半導体装置1を製造することができる。Further, in the semiconductor device 1 shown in FIG. 8B, the base 2 made of glass epoxy resin is used as in the above, and the through conductor 72a and the through conductor 72a are electrically connected to the base 2. The back electrode 72 is formed. If the notch 32 (see FIG. 2) is provided at the time of manufacturing the base 2, bubbles 41 (see FIG. 10) are formed inside the translucent resin 4 even in the case of the surface mounting type. It is possible to manufacture the semiconductor device 1 which does not exist.
【0044】なお、第1実施例〜第3実施例におけるい
ずれの半導体装置1においてもCCDリニアセンサーか
ら成る半導体装置1を例として説明したが本発明はこれ
に限定されず、CCDエリアセンサーや内部の半導体素
子10へ光を透過させる必要のある半導体デバイスであ
れば同様である。また、レーザのような光を発生、発射
する半導体素子10を備えた半導体装置1であってもよ
い。Although the semiconductor device 1 including the CCD linear sensor has been described as an example in any of the semiconductor devices 1 in the first to third embodiments, the present invention is not limited to this, and the CCD area sensor and the internal portion. The same applies to any semiconductor device that needs to transmit light to the semiconductor element 10. Further, the semiconductor device 1 may include the semiconductor element 10 that emits and emits light such as a laser.
【0045】さらに、図9に示すようなレーザチップ1
1とフォトダイオード12とを備えたフォトカップラか
ら成る半導体装置1であっても同様である。つまり、こ
のフォトカップラから成る半導体装置1は、基台2上の
中空部分に実装された増幅用のICチップ10aと、こ
のICチップ10a上に搭載されたレーザチップ11お
よびフォトダイオード12と、レーザチップ11からの
光を上方に反射させるとともに上方から入射した光をフ
ォトダイオード12の方向に反射させるプリズム13
と、中空内部に充填された透光性樹脂4と、フレーム3
上にBステージシーラーまたはAステージシーラーによ
って接続される透光板5とを備えており、この透光板5
の表面および裏面に反射防止膜であるフッ化マグネシウ
ムの単層コートやSiO/SiO2 や酸化ジルコニウ
ム、Ta2 O5 /Al2 O3 等から成る多層コートが施
されている。Furthermore, a laser chip 1 as shown in FIG.
The same applies to the semiconductor device 1 including a photocoupler including the photodiode 1 and the photodiode 12. That is, the semiconductor device 1 including this photocoupler includes an amplifying IC chip 10a mounted in a hollow portion on the base 2, a laser chip 11 and a photodiode 12 mounted on the IC chip 10a, and a laser. A prism 13 that reflects the light from the chip 11 upward and reflects the light incident from above toward the photodiode 12.
And the translucent resin 4 filled in the hollow interior and the frame 3
A transparent plate 5 connected by a B-stage sealer or an A-stage sealer is provided above the transparent plate 5.
The front and back surfaces of the are coated with a single-layer coating of magnesium fluoride, which is an antireflection film, or a multi-layer coating of SiO / SiO 2 , zirconium oxide, Ta 2 O 5 / Al 2 O 3 or the like.
【0046】また、上記反射防止膜のかわりに透光板5
の有効領域S以外の部分に遮光膜52を施したり、上記
反射防止膜とともに遮光膜52を施してもよく、このよ
うな構成によって光学的に優れたフォトカップラから成
る半導体装置1を提供できることになる。Further, the translucent plate 5 is used instead of the antireflection film.
The light-shielding film 52 may be provided on a portion other than the effective region S of the above, or the light-shielding film 52 may be provided together with the antireflection film. With such a configuration, it is possible to provide the semiconductor device 1 including an optically excellent photocoupler. Become.
【0047】[0047]
【発明の効果】以上説明したように、本発明の半導体装
置およびその製造方法には次のような効果がある。すな
わち、この半導体装置においては、透光板の周縁と開口
部の周縁との間に隙間が設けられているため、開口部内
に埋め込んだ透光性樹脂の内部で発生した気泡や、透光
板を載置する際に巻き込んだ空気から成る気泡をこの隙
間を介して外部へ逃がすことが可能となる。さらに、透
光板の表面で半導体素子の有効領域と対応する部分以外
の領域に遮光膜が設けられているため、透光性樹脂内の
気泡やボンディングワイヤーによる不要な乱反射の影響
を半導体素子が受けることがなくなる。これらにより、
読み取り画像の感度むらや誤検出等のない光学的特性に
優れた半導体装置となる。As described above, the semiconductor device and the method of manufacturing the same of the present invention have the following effects. That is, in this semiconductor device, since a gap is provided between the peripheral edge of the transparent plate and the peripheral edge of the opening, bubbles generated inside the transparent resin embedded in the opening and the transparent plate. It is possible to let air bubbles, which are made up of the air entrained when the device is placed, escape to the outside through this gap. Further, since the light-shielding film is provided on the surface of the light-transmissive plate in a region other than the region corresponding to the effective region of the semiconductor element, the semiconductor element is prevented from being affected by unnecessary diffused reflection due to bubbles in the light-transmissive resin or the bonding wire. I will not receive it. With these,
The semiconductor device has excellent optical characteristics without unevenness in sensitivity of read images and erroneous detection.
【0048】また、本発明の半導体装置の製造方法によ
れば、透光板の載置によって開口部内に充填した透光性
樹脂を押圧し、透光性樹脂内の気泡を透光板の周縁と開
口部の周縁との間の隙間から排出することができるた
め、この気泡による特性不良を出すことが無くなり光学
的特性に優れた半導体装置の製造歩留りを向上させるこ
とが可能となる。Further, according to the method of manufacturing a semiconductor device of the present invention, the translucent resin filled in the opening is pressed by placing the translucent plate, and air bubbles in the translucent resin are removed from the peripheral edge of the translucent plate. Since the air bubbles can be discharged from the gap between the opening and the peripheral edge of the opening, it is possible to improve the manufacturing yield of the semiconductor device having excellent optical characteristics without causing the characteristic defects due to the bubbles.
【図1】本発明の第1実施例を説明する概略図で、
(a)は断面図、(b)は斜視図である。FIG. 1 is a schematic view illustrating a first embodiment of the present invention,
(A) is sectional drawing, (b) is a perspective view.
【図2】本発明の製造方法を説明する図(その1)で、
(a)は平面図、(b)は側断面図である。FIG. 2 is a view (No. 1) for explaining the manufacturing method of the present invention,
(A) is a plan view and (b) is a side sectional view.
【図3】本発明の製造方法を説明する図(その2)であ
る。FIG. 3 is a diagram (part 2) explaining the manufacturing method of the present invention.
【図4】本発明の製造方法を説明する図(その3)であ
る。FIG. 4 is a diagram (No. 3) for explaining the manufacturing method of the present invention.
【図5】本発明の製造方法を説明する図(その4)であ
り、(a)は側断面図、(b)は平面図である。FIG. 5 is a view (No. 4) for explaining the manufacturing method of the present invention, in which (a) is a side sectional view and (b) is a plan view.
【図6】本発明の第2実施例を説明する図で、(a)は
断面図、(b)は部分拡大図である。6A and 6B are diagrams illustrating a second embodiment of the present invention, in which FIG. 6A is a sectional view and FIG. 6B is a partially enlarged view.
【図7】本発明の第3実施例を説明する概略断面図で、
(a)は(その1)、(b)は(その2)である。FIG. 7 is a schematic sectional view illustrating a third embodiment of the present invention,
(A) is (No. 1) and (b) is (No. 2).
【図8】他の形状への適応例を示す図で、(a)はピン
型、(b)は表面実装型の例である。FIG. 8 is a diagram showing an example of adaptation to another shape, in which (a) is a pin type and (b) is a surface mount type.
【図9】フォトカップラへの適応例を説明する概略断面
図である。FIG. 9 is a schematic cross-sectional view illustrating an example of application to a photo coupler.
【図10】従来例を説明する断面図である。FIG. 10 is a sectional view illustrating a conventional example.
1 半導体装置 2 基台 3 フレーム 4 透光性樹脂 5 透光板 31 開口部 32 切欠部 51 隙間 1 semiconductor device 2 base 3 frame 4 translucent resin 5 translucent plate 31 opening 32 notch 51 gap
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 FI 技術表示箇所 H01L 23/31 27/14 31/12 A 7210−4M ─────────────────────────────────────────────────── ─── Continuation of the front page (51) Int.Cl. 6 Identification code Internal reference number FI Technical indication H01L 23/31 27/14 31/12 A 7210-4M
Claims (11)
台と、該基台上に設けられ少なくとも該半導体素子の上
方領域に開口部を備えたフレームと、該開口部内に埋め
込まれて該基台に搭載された半導体素子を封止する透光
性樹脂と、該透光性樹脂上に配置される透光板とから成
る半導体装置であって、 前記透光板の周縁と前記開口部の周縁との間には隙間が
設けられていることを特徴とする半導体装置。1. A base for mounting a semiconductor element substantially in the center, a frame provided on the base and having an opening at least in an upper region of the semiconductor element, and embedded in the opening. What is claimed is: 1. A semiconductor device comprising a translucent resin that seals a semiconductor element mounted on a base, and a translucent plate disposed on the translucent resin, the peripheral edge of the translucent plate and the opening. A semiconductor device characterized in that a gap is provided between the periphery of the semiconductor device and the periphery of the semiconductor device.
した両側の前記開口部と臨む所定深さの切欠部を備えて
おり、該切欠部に前記透光板が配置されていることを特
徴とする請求項1記載の半導体装置。2. The frame has cutouts of a predetermined depth facing the openings on both sides of the semiconductor element, and the translucent plate is arranged in the cutouts. The semiconductor device according to claim 1.
するものであることを特徴とする請求項1記載の半導体
装置。3. The semiconductor device according to claim 1, wherein the translucent plate blocks infrared rays from the outside.
ことを特徴とする請求項1記載の半導体装置。4. The semiconductor device according to claim 1, wherein the transparent plate includes an antireflection film.
するものであるとともに、少なくとも前記透光性樹脂と
接触する側に反射防止膜を備えていることを特徴とする
請求項1記載の半導体装置。5. The light-transmitting plate is for blocking infrared rays from the outside, and is provided with an antireflection film at least on a side in contact with the light-transmitting resin. Semiconductor device.
ームを基台上に設け、該開口部内の基台上に半導体素子
を搭載して該半導体素子を透光性樹脂にて覆い、該透光
性樹脂上に透光板を配置する半導体装置の製造方法であ
って、 予め、前記開口部を中心とした前記フレームの両側に、
該開口部と臨みかつ該開口部の対応辺よりも短い幅で所
定深さの切欠部をそれぞれ設けておき、 前記半導体素子を搭載した状態で前記開口部内に前記透
光性樹脂を充填し、 次いで、前記切欠部の幅とほぼ等しい幅の前記透光板
を、前記透光性樹脂を押圧しながら前記段差面に載置す
ることを特徴とする半導体装置の製造方法。6. A frame having a substantially rectangular opening in a substantially central portion is provided on a base, a semiconductor element is mounted on the base in the opening, and the semiconductor element is covered with a transparent resin. A method of manufacturing a semiconductor device, wherein a transparent plate is arranged on the transparent resin, which comprises:
A notch having a predetermined depth and a width shorter than the corresponding side of the opening and facing the opening are respectively provided, and the translucent resin is filled in the opening with the semiconductor element mounted, Next, a method of manufacturing a semiconductor device, characterized in that the translucent plate having a width substantially equal to the width of the cutout is placed on the step surface while pressing the translucent resin.
部の段差面よりも高い位置まで充填することを特徴とす
る請求項6記載の半導体装置の製造方法。7. The method of manufacturing a semiconductor device according to claim 6, wherein, when the translucent resin is filled, it is filled up to a position higher than a step surface of the cutout.
中央に搭載するための基台と、該基台上に設けられ少な
くとも該半導体素子の上方領域に開口部を備えたフレー
ムと、該開口部内に埋め込まれて該基台に搭載された半
導体素子を封止する透光性樹脂と、該透光性樹脂上に配
置される透光板とから成る半導体装置であって、 前記透光板の少なくとも前記透光性樹脂と接触する側で
前記半導体素子の有効領域と対応する部分以外の領域に
は遮光膜が設けられていることを特徴とする半導体装
置。8. A base for mounting a semiconductor element having a predetermined effective area substantially in the center, a frame provided on the base and having an opening in at least an area above the semiconductor element, What is claimed is: 1. A semiconductor device comprising a translucent resin embedded in an opening and sealing a semiconductor element mounted on the base, and a translucent plate disposed on the translucent resin. A semiconductor device, characterized in that a light-shielding film is provided at least on a side of the plate that is in contact with the light-transmissive resin, in a region other than a region corresponding to the effective region of the semiconductor element.
するものであることを特徴とする請求項8記載の半導体
装置。9. The semiconductor device according to claim 8, wherein the transparent plate blocks infrared rays from the outside.
ることを特徴とする請求項8記載の半導体装置。10. The semiconductor device according to claim 8, wherein the transparent plate includes an antireflection film.
断するものであるとともに、少なくとも前記透光性樹脂
と接触する側に反射防止膜を備えていることを特徴とす
る請求項8記載の半導体装置。11. The light-transmitting plate is for blocking infrared rays from the outside, and is provided with an antireflection film on at least a side in contact with the light-transmitting resin. Semiconductor device.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP5-307320 | 1993-11-12 | ||
JP30732093 | 1993-11-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
JPH07183415A true JPH07183415A (en) | 1995-07-21 |
Family
ID=17967731
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP8780094A Pending JPH07183415A (en) | 1993-11-12 | 1994-03-31 | Semiconductor device and manufacture thereof |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH07183415A (en) |
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WO2018147222A1 (en) * | 2017-02-10 | 2018-08-16 | ローム株式会社 | Semiconductor device |
CN108180672A (en) * | 2017-12-13 | 2018-06-19 | 中国科学院光电技术研究所 | Vacuum packaging Dewar of EMCCD detector |
JP2023141445A (en) * | 2022-03-24 | 2023-10-05 | 三菱電機株式会社 | Electric power conversion system |
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