WO2018146910A1 - Dispositif à ondes élastiques, circuit frontal haute-fréquence et dispositif de communication - Google Patents

Dispositif à ondes élastiques, circuit frontal haute-fréquence et dispositif de communication Download PDF

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Publication number
WO2018146910A1
WO2018146910A1 PCT/JP2017/042424 JP2017042424W WO2018146910A1 WO 2018146910 A1 WO2018146910 A1 WO 2018146910A1 JP 2017042424 W JP2017042424 W JP 2017042424W WO 2018146910 A1 WO2018146910 A1 WO 2018146910A1
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WO
WIPO (PCT)
Prior art keywords
region
dielectric film
film
elastic wave
wave device
Prior art date
Application number
PCT/JP2017/042424
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English (en)
Japanese (ja)
Inventor
三村　昌和
Original Assignee
株式会社村田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社村田製作所 filed Critical 株式会社村田製作所
Priority to KR1020197020552A priority Critical patent/KR102270389B1/ko
Priority to CN201780085766.6A priority patent/CN110268628B/zh
Publication of WO2018146910A1 publication Critical patent/WO2018146910A1/fr
Priority to US16/529,841 priority patent/US10797678B2/en

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    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/24—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages
    • H03F3/245—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers of transmitter output stages with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02637—Details concerning reflective or coupling arrays
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02834—Means for compensation or elimination of undesirable effects of temperature influence
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02858—Means for compensation or elimination of undesirable effects of wave front distortion
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02881—Means for compensation or elimination of undesirable effects of diffraction of wave beam
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/46—Filters
    • H03H9/64—Filters using surface acoustic waves
    • H03H9/6489—Compensation of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/70—Multiple-port networks for connecting several sources or loads, working on different frequencies or frequency bands, to a common load or source
    • H03H9/72—Networks using surface acoustic waves
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Abstract

La présente invention concerne un dispositif à ondes élastiques qui utilise une onde de Love et permet de supprimer efficacement des réponses parasites en mode transversal. Un dispositif à ondes élastiques (1) utilise une onde de Love, et est pourvu d'un substrat piézoélectrique (2) (corps piézoélectrique), d'une électrode IDT (3) disposée sur le substrat piézoélectrique (2), et d'un premier film diélectrique disposé au-dessus du substrat piézoélectrique (2) et recouvrant l'électrode IDT (3). Dans l'électrode IDT (3), une région centrale (B), des première et seconde régions de bord (Ca, Cb) et des première et seconde régions d'espace (Da, Db) sont disposées dans cet ordre. Dans la première région de bord (Ca) et la seconde région de bord (Cb), un film d'addition de masse (7) est disposé dans le premier film diélectrique, et dans le premier film diélectrique, T1 / (T1 + T2) < 0,5 est satisfait, T1 représentant l'épaisseur de film d'une partie située entre l'électrode IDT (3) et le film d'addition de masse (7), et T2 représentant l'épaisseur de film d'une partie située entre une surface sur le côté opposé au côté substrat piézoélectrique (2) du premier film diélectrique et le film d'addition de masse (7).
PCT/JP2017/042424 2017-02-08 2017-11-27 Dispositif à ondes élastiques, circuit frontal haute-fréquence et dispositif de communication WO2018146910A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020197020552A KR102270389B1 (ko) 2017-02-08 2017-11-27 탄성파 장치, 고주파 프론트 엔드 회로 및 통신 장치
CN201780085766.6A CN110268628B (zh) 2017-02-08 2017-11-27 弹性波装置、高频前端电路以及通信装置
US16/529,841 US10797678B2 (en) 2017-02-08 2019-08-02 Acoustic wave device, radio-frequency front end circuit, and communication device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017021162 2017-02-08
JP2017-021162 2017-02-08

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US16/529,841 Continuation US10797678B2 (en) 2017-02-08 2019-08-02 Acoustic wave device, radio-frequency front end circuit, and communication device

Publications (1)

Publication Number Publication Date
WO2018146910A1 true WO2018146910A1 (fr) 2018-08-16

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ID=63108254

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/042424 WO2018146910A1 (fr) 2017-02-08 2017-11-27 Dispositif à ondes élastiques, circuit frontal haute-fréquence et dispositif de communication

Country Status (4)

Country Link
US (1) US10797678B2 (fr)
KR (1) KR102270389B1 (fr)
CN (1) CN110268628B (fr)
WO (1) WO2018146910A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2020209189A1 (fr) * 2019-04-08 2020-10-15 株式会社村田製作所 Dispositif à ondes élastiques
CN113454911A (zh) * 2019-02-18 2021-09-28 株式会社村田制作所 弹性波装置
KR20210118949A (ko) * 2019-03-13 2021-10-01 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102479251B1 (ko) * 2019-11-20 2022-12-20 (주)와이솔 표면 탄성파 소자
CN115037274B (zh) * 2022-08-12 2022-12-20 常州承芯半导体有限公司 声表面波谐振装置及其形成方法

Citations (6)

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Publication number Priority date Publication date Assignee Title
WO2007138844A1 (fr) * 2006-05-30 2007-12-06 Murata Manufacturing Co., Ltd. Dispositif à onde élastique
JP2009290472A (ja) * 2008-05-28 2009-12-10 Fujitsu Ltd 弾性波デバイス、フィルタ、通信モジュール、および通信装置
WO2012124210A1 (fr) * 2011-03-16 2012-09-20 株式会社村田製作所 Procédé de fabrication d'un dispositif à onde élastique
JP2012186808A (ja) * 2011-03-07 2012-09-27 Triquint Semiconductor Inc トリミング効果とピストンモードでの不安定性を最小化する音響波導波装置および方法
JP2012209841A (ja) * 2011-03-30 2012-10-25 Kyocera Corp 弾性波素子およびそれを用いた弾性波装置
JP2016119569A (ja) * 2014-12-19 2016-06-30 太陽誘電株式会社 弾性波デバイス

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JP4826633B2 (ja) * 2006-11-24 2011-11-30 株式会社村田製作所 弾性境界波装置の製造方法及び弾性境界波装置
US8294331B2 (en) 2009-09-22 2012-10-23 Triquint Semiconductor, Inc. Acoustic wave guide device and method for minimizing trimming effects and piston mode instabilities
JP5873307B2 (ja) * 2011-11-21 2016-03-01 太陽誘電株式会社 フィルタおよび分波器
US10530328B2 (en) * 2017-09-22 2020-01-07 Huawei Technologies Co., Ltd. Surface acoustic wave device

Patent Citations (6)

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WO2007138844A1 (fr) * 2006-05-30 2007-12-06 Murata Manufacturing Co., Ltd. Dispositif à onde élastique
JP2009290472A (ja) * 2008-05-28 2009-12-10 Fujitsu Ltd 弾性波デバイス、フィルタ、通信モジュール、および通信装置
JP2012186808A (ja) * 2011-03-07 2012-09-27 Triquint Semiconductor Inc トリミング効果とピストンモードでの不安定性を最小化する音響波導波装置および方法
WO2012124210A1 (fr) * 2011-03-16 2012-09-20 株式会社村田製作所 Procédé de fabrication d'un dispositif à onde élastique
JP2012209841A (ja) * 2011-03-30 2012-10-25 Kyocera Corp 弾性波素子およびそれを用いた弾性波装置
JP2016119569A (ja) * 2014-12-19 2016-06-30 太陽誘電株式会社 弾性波デバイス

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113454911A (zh) * 2019-02-18 2021-09-28 株式会社村田制作所 弹性波装置
US11824518B2 (en) 2019-02-18 2023-11-21 Murata Manufacturing Co., Ltd. Acoustic wave device
CN113454911B (zh) * 2019-02-18 2024-05-07 株式会社村田制作所 弹性波装置
KR20210118949A (ko) * 2019-03-13 2021-10-01 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치
KR102448414B1 (ko) * 2019-03-13 2022-09-27 가부시키가이샤 무라타 세이사쿠쇼 탄성파 장치
WO2020209189A1 (fr) * 2019-04-08 2020-10-15 株式会社村田製作所 Dispositif à ondes élastiques
JPWO2020209189A1 (ja) * 2019-04-08 2021-12-16 株式会社村田製作所 弾性波装置
JP7207526B2 (ja) 2019-04-08 2023-01-18 株式会社村田製作所 弾性波装置

Also Published As

Publication number Publication date
CN110268628B (zh) 2023-08-01
US10797678B2 (en) 2020-10-06
US20190356296A1 (en) 2019-11-21
KR20190092557A (ko) 2019-08-07
KR102270389B1 (ko) 2021-06-29
CN110268628A (zh) 2019-09-20

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