WO2018139092A1 - Résonateur - Google Patents

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Publication number
WO2018139092A1
WO2018139092A1 PCT/JP2017/044787 JP2017044787W WO2018139092A1 WO 2018139092 A1 WO2018139092 A1 WO 2018139092A1 JP 2017044787 W JP2017044787 W JP 2017044787W WO 2018139092 A1 WO2018139092 A1 WO 2018139092A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnetization
layer
magnetic field
free layer
magnetization free
Prior art date
Application number
PCT/JP2017/044787
Other languages
English (en)
Japanese (ja)
Inventor
直通 出川
晋治 原
邦恭 伊藤
実 大田
英嗣 小村
Original Assignee
Tdk株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tdk株式会社 filed Critical Tdk株式会社
Publication of WO2018139092A1 publication Critical patent/WO2018139092A1/fr

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B5/00—Recording by magnetisation or demagnetisation of a record carrier; Reproducing by magnetic means; Record carriers therefor
    • G11B5/127—Structure or manufacture of heads, e.g. inductive
    • G11B5/33—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only
    • G11B5/39—Structure or manufacture of flux-sensitive heads, i.e. for reproduction only; Combination of such heads with means for recording or erasing only using magneto-resistive devices or effects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/22—Constructional features of resonators consisting of magnetostrictive material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices

Abstract

La présente invention concerne un résonateur (1) pourvu d'un élément à effet magnétorésistif (2), d'une unité d'application de champ magnétique externe (3), et d'une unité de transmission d'énergie (4). L'élément à effet magnétorésistif (2) comprend : une couche fixe de magnétisation (21) ayant une magnétisation dans une première direction; une couche libre de magnétisation (23) ayant une magnétisation dont la direction varie; et une couche d'espacement (22) disposée entre la couche fixe de magnétisation (21) et la couche libre de magnétisation (23). L'unité d'application de champ magnétique externe (3) applique un champ magnétique externe d'une seconde direction sur la couche libre de magnétisation (23). L'unité de transmission d'énergie (4) transmet à l'élément à effet magnétorésistif (2) de l'énergie destinée à faire vibrer la magnétisation de la couche libre de magnétisation (23). L'angle formé par la seconde direction par rapport à la première direction se situe dans la plage de 90° à 150°.
PCT/JP2017/044787 2017-01-24 2017-12-13 Résonateur WO2018139092A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-010195 2017-01-24
JP2017010195A JP2020047965A (ja) 2017-01-24 2017-01-24 共振器

Publications (1)

Publication Number Publication Date
WO2018139092A1 true WO2018139092A1 (fr) 2018-08-02

Family

ID=62978776

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/044787 WO2018139092A1 (fr) 2017-01-24 2017-12-13 Résonateur

Country Status (2)

Country Link
JP (1) JP2020047965A (fr)
WO (1) WO2018139092A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020088949A (ja) * 2018-11-19 2020-06-04 日産自動車株式会社 磁気回路

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008064499A (ja) * 2006-09-05 2008-03-21 Toshiba Corp 磁気センサー
JP2008170416A (ja) * 2006-12-14 2008-07-24 Tdk Corp 磁気デバイス及び周波数アナライザ
JP2011181756A (ja) * 2010-03-02 2011-09-15 Canon Anelva Corp マイクロ波素子
JP2013045840A (ja) * 2011-08-23 2013-03-04 National Institute Of Advanced Industrial & Technology 電界強磁性共鳴励起方法及びそれを用いた磁気機能素子
JP2016096377A (ja) * 2014-11-12 2016-05-26 国立研究開発法人産業技術総合研究所 マイクロ波検波器及びマイクロ波検波方法
US20160277000A1 (en) * 2015-03-16 2016-09-22 Tdk Corporation Magnetoresistive effect device

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008064499A (ja) * 2006-09-05 2008-03-21 Toshiba Corp 磁気センサー
JP2008170416A (ja) * 2006-12-14 2008-07-24 Tdk Corp 磁気デバイス及び周波数アナライザ
JP2011181756A (ja) * 2010-03-02 2011-09-15 Canon Anelva Corp マイクロ波素子
JP2013045840A (ja) * 2011-08-23 2013-03-04 National Institute Of Advanced Industrial & Technology 電界強磁性共鳴励起方法及びそれを用いた磁気機能素子
JP2016096377A (ja) * 2014-11-12 2016-05-26 国立研究開発法人産業技術総合研究所 マイクロ波検波器及びマイクロ波検波方法
US20160277000A1 (en) * 2015-03-16 2016-09-22 Tdk Corporation Magnetoresistive effect device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020088949A (ja) * 2018-11-19 2020-06-04 日産自動車株式会社 磁気回路
JP7206835B2 (ja) 2018-11-19 2023-01-18 日産自動車株式会社 磁気回路

Also Published As

Publication number Publication date
JP2020047965A (ja) 2020-03-26

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