WO2018121322A1 - Dispositif d'affichage flexible et son procédé de fabrication - Google Patents

Dispositif d'affichage flexible et son procédé de fabrication Download PDF

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Publication number
WO2018121322A1
WO2018121322A1 PCT/CN2017/116916 CN2017116916W WO2018121322A1 WO 2018121322 A1 WO2018121322 A1 WO 2018121322A1 CN 2017116916 W CN2017116916 W CN 2017116916W WO 2018121322 A1 WO2018121322 A1 WO 2018121322A1
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WIPO (PCT)
Prior art keywords
conductive layer
display device
flexible display
hole
bending
Prior art date
Application number
PCT/CN2017/116916
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English (en)
Chinese (zh)
Inventor
胡坤
冯浩
袁波
蔡世星
张婷婷
宋艳芹
林立
胡思明
朱晖
Original Assignee
昆山工研院新型平板显示技术中心有限公司
昆山国显光电有限公司
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Priority claimed from CN201710774762.0A external-priority patent/CN108257971B/zh
Application filed by 昆山工研院新型平板显示技术中心有限公司, 昆山国显光电有限公司 filed Critical 昆山工研院新型平板显示技术中心有限公司
Priority to EP17885656.3A priority Critical patent/EP3564998A4/fr
Priority to JP2019520113A priority patent/JP7312104B2/ja
Priority to KR1020197010450A priority patent/KR20190045353A/ko
Publication of WO2018121322A1 publication Critical patent/WO2018121322A1/fr
Priority to US16/318,295 priority patent/US20190237490A1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/124—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits
    • H01L27/1244—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or layout of the wiring layers specially adapted to the circuit arrangement, e.g. scanning lines in LCD pixel circuits for preventing breakage, peeling or short circuiting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42384—Gate electrodes for field effect devices for field-effect transistors with insulated gate for thin film field effect transistors, e.g. characterised by the thickness or the shape of the insulator or the dimensions, the shape or the lay-out of the conductor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78645—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate
    • H01L29/78648—Thin film transistors, i.e. transistors with a channel being at least partly a thin film with multiple gate arranged on opposing sides of the channel
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133305—Flexible substrates, e.g. plastics, organic film
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1345—Conductors connecting electrodes to cell terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates

Definitions

  • the present invention relates to display technology, and in particular to a flexible display device and a method of fabricating the same.
  • the flexible display device refers to a display device in which the display panel is bendable and deformable, and includes various types such as a flexible organic electroluminescence display device (OLED), a flexible electrophoretic display device (EPD), and a flexible liquid crystal display device (LCD).
  • OLED organic electroluminescence display device
  • EPD flexible electrophoretic display device
  • LCD liquid crystal display device
  • a fragile TFT Thin Film Transistor
  • the broken TFT may affect the display effect of the flexible display device or directly cause the flexible display device to malfunction. It has been found that the brittle TFT cracks are mainly concentrated on the thicker conductive layer around the screen, especially in the flexible foldable direction of the conductive layer.
  • the conductive layer is punched to release stress; the plurality of conductive layers are disposed, and the contact holes are used to connect them to each other; and the electrode material is replaced.
  • the above-described conventional technical solutions for enhancing the mechanical reliability of the conductive layer are not satisfactory.
  • the present invention provides a flexible display device and a method of fabricating the same to solve the problem that the conductive layer is susceptible to cracking or even breakage during bending or folding of the flexible display device in the prior art.
  • an embodiment of the present invention provides a flexible display device including: a flexible substrate and a conductive layer formed on the flexible substrate, wherein the conductive layer is provided with at least one recessed region.
  • the conductive layer constitutes a power line on the flexible substrate.
  • the longest one of all the sides of the recessed area or the longest one of the side lines connecting the two sides of the recessed side and the curved side of the flexible display device The direction of the fold is the same.
  • the recessed area comprises a through hole and/or a blind hole.
  • the conductive layer and the flexible substrate are divided into a bending zone and a non-bending zone along the extending direction, and at least one recessed zone is disposed in the bending zone of the conductive layer; wherein the thickness of the conductive layer of the bending zone Greater than the thickness of the conductive layer of the non-bending zone.
  • the upper or lower edge of the non-stretching direction of the bend region of the conductive layer is collinear with the same side edge of the conductive layer of the non-bending region.
  • the upper and lower edges of the non-stretching direction of the bend region of the conductive layer are not collinear with the same side edge of the conductive layer of the non-bending region.
  • the flexible display device adopts a thin film transistor structure, wherein the conductive layer is electrically connected to the source electrode, the drain electrode, the gate electrode, the cathode or the anode of the flexible display device; or the conductive layer constitutes a source of the flexible display device Electrode, drain electrode, gate electrode, cathode or anode.
  • the flexible display device adopts a thin film transistor structure
  • the conductive layer constitutes a top gate and/or a bottom gate in a gate electrode of the flexible display device
  • the gate electrode includes: disposed above the channel layer of the thin film transistor structure a top gate; and a bottom gate disposed under the channel layer; wherein the top gate is provided with at least one recessed region, and the projection of the recessed region on the top gate on a plane parallel to the channel layer is planarly on the plane Covered by the projection; and/or, the bottom gate is provided with at least one recessed area, and the projection of the recessed area on the bottom gate on the plane is covered by the projection of the top gate on the plane.
  • the projected shape of the recessed area on the top gate on the plane is the same as the projected shape of the bottom gate on the plane; and/or the projected shape of the recessed area on the bottom gate on the plane and The shape of the top grid projection on the plane is the same.
  • At least one of the recessed regions of the conductive layer is filled with an organic material.
  • the at least one recessed region is disposed in one or more rows along the direction of the bend line of the flexible display device.
  • the plurality of rows of recessed regions are aligned or staggered.
  • the ratio of the cross-sectional width in the line width direction of one recessed region of the same column or the cross-sectional width in the line width direction of the plurality of recessed regions in the same column and the line width of the conductive layer is less than or equal to 1/. 2.
  • the ratio of the minimum spacing between two adjacent recessed regions in the same row and the side or side connecting lines consistent with the bending direction of the flexible display device is greater than or equal to 1/2 and less than or equal to 2.
  • the projection of the shape of the at least one recessed area on a plane parallel to the flexible substrate or a plane perpendicular to the flexible substrate comprises a combination of one or more of the following shapes: rectangle, Triangle, trapezoid, diamond, circle, ellipse, sinusoidal, twisted and zigzag.
  • the protective layer is disposed on the conductive layer, and the ratio of the aperture of the recessed region covered by the protective layer to the width of the conductive layer is less than 0.1.
  • the ratio of the aperture of the recessed region of the conductive layer not covered by the protective layer to the width of the conductive layer is greater than 0.08.
  • an embodiment of the present invention further provides a method for manufacturing a flexible display device.
  • the method for manufacturing a flexible display device includes: forming a flexible substrate; determining a power line resistance requirement; and obtaining a line width of the conductive layer according to a power line resistance requirement Data of the recessed area; forming a power line on the flexible substrate according to the line width of the conductive layer and the data of the recessed area.
  • an embodiment of the present invention further provides a method for fabricating a flexible display device.
  • the flexible display device is a thin film transistor structure
  • the method for preparing a gate electrode of the thin film transistor structure includes: fabricating a bottom gate; and sequentially forming a bottom on the bottom gate a gate insulating layer and a channel layer; and sequentially forming a top gate insulating layer and a top gate over the channel layer; wherein the top gate is provided with at least one recessed region, and the recessed region on the top gate is in a plane parallel to the channel layer
  • the projection on the upper surface is covered by the projection of the bottom gate on the plane; and/or the bottom gate is provided with at least one recessed area, and the projection of the recessed area on the bottom gate on the plane is covered by the projection of the top gate on the plane.
  • a flexible display device includes a flexible substrate and a conductive layer formed on the flexible substrate, and the conductive layer is provided with at least one recessed region.
  • the flexible display device provided by the embodiment of the present invention prevents the conductive layer from being cracked or broken during the bending or folding process by providing a conductive layer on the flexible substrate and providing at least one recessed region on the conductive layer, thereby improving conductivity. The quality and reliability of the layer when it is bent.
  • FIG. 1 is a schematic structural view of a flexible display device according to a first embodiment of the present invention.
  • FIG. 2 is a schematic structural view of a flexible display device according to Embodiment 2 of the present invention.
  • FIG 3 is a schematic structural view of a flexible display device according to a third embodiment of the present invention.
  • FIG. 4 is a schematic structural view of a flexible display device according to Embodiment 4 of the present invention.
  • FIG. 5 is a schematic structural view of a flexible display device according to Embodiment 5 of the present invention.
  • FIG. 6 is a schematic structural view of a flexible display device according to Embodiment 6 of the present invention.
  • Fig. 7a is a schematic structural view showing a structure of a thin film transistor of a flexible display device according to a seventh embodiment of the present invention.
  • FIG. 7b is a schematic view showing the projection of a gate electrode of a thin film transistor structure of a flexible display device according to Embodiment 7 of the present invention.
  • Embodiment 8a is a schematic structural view of a thin film transistor structure of a flexible display device according to Embodiment 8 of the present invention.
  • FIG. 8b is a schematic view showing the projection of a gate electrode of a thin film transistor structure of a flexible display device according to Embodiment 8 of the present invention.
  • FIG. 9 is a flow chart showing the fabrication of a gate electrode of a thin film transistor structure of a flexible display device according to Embodiment 9 of the present invention.
  • FIG. 10 is a schematic diagram showing a bending line experimental data broken line of the flexible display device according to Embodiment 10 of the present invention.
  • FIG. 11 is a schematic diagram showing a bending line of experimental data of a flexible display device according to Embodiment 11 of the present invention.
  • the flexible display device includes: a flexible substrate 10 and a power line 11 formed on the flexible substrate 10; the power line 11 includes a conductive layer 110 having a through hole 111 thereon.
  • the through hole 111 can disperse the stress generated when the power cord 11 is bent, thereby preventing the power line from being cracked or broken during the bending or folding process of the flexible display device, thereby improving the quality and reliability of the power cord when bent.
  • the material of the conductive layer 110 may be a metal material such as aluminum metal or copper metal; it may also be a composite metal layer composed of a plurality of metal materials; it may also be a transparent material such as indium tin oxide.
  • the material selected for the conductive layer 110 is only required to be electrically conductive.
  • the longest one of all the sides of the through hole 111 or the longest one of the side lines of the two sides of the connecting side of the through hole 111 and the bending direction of the power line 11 Consistent.
  • the side refers to any side of the shape of the through hole
  • the side line refers to the line between any two points on any side of the through hole.
  • the bending direction refers to the axial direction in which the power cord 11 is bent, that is, the direction in which the stress is transmitted when the power cord 11 is bent; further, the bending direction of the power cord 11 is generated when the power cord 11 is bent.
  • the bend line is vertical.
  • the flexible display device has a rectangular shape, and the bending operation is performed along the long side, that is, the two short sides are gradually approached or overlapped, and the bending direction is the axial direction where the long side is located.
  • the through hole 111 has a rectangular shape. Further, the long side of the rectangular through hole (ie, the longest side) coincides with the bending direction of the power line 11, that is, the long side of the rectangular through hole is consistent with the bending direction of the flexible display device. Thereby, the through hole 111 can be made to better disperse the stress generated when the power supply line 11 is bent.
  • a row of through holes 111 is disposed on the conductive layer 110 having a width of 200 ⁇ m to 500 ⁇ m, and one or more rows of through holes 111 are evenly distributed on the conductive layer 110, thereby ensuring a certain number of through holes. The better stress generated when the power line 11 is bent is bent, and the quality and reliability of the conductive layer 110 can be ensured.
  • the conductive layer 110 when the line width of the conductive layer 110 is less than 500 ⁇ m, the conductive layer 110 has a row of through holes 111; when the line width of the conductive layer 110 is greater than or equal to 500 ⁇ m and less than 1000 ⁇ m, the conductive layer 110 has two rows of through holes 111; When the line width of the conductive layer 110 is greater than or equal to 1000 ⁇ m and less than 1500 ⁇ m, the conductive layer 110 has three rows of through holes 111; when the line width of the conductive layer 110 is 1500 ⁇ m or more and less than 2000 ⁇ m, the conductive layer 110 has four rows of through holes 111. .
  • the conductive layer 110 has a wider line width (greater than 2000 ⁇ m)
  • more rows of through holes 111 may be disposed on the conductive layer 110.
  • the number of the through holes 111 in this embodiment is seven, and the seven through holes 111 are arranged in a line.
  • the cross-sectional width of one through hole 111 of the same column in the line width direction or the sum of the cross-sectional widths of the plurality of through holes 111 in the same width in the line width direction and the line width of the conductive layer 110 is less than or equal to 1/2.
  • the ratio of the short side a1 of the rectangular through hole 111 to the line width a2 of the conductive layer 110 is less than or equal to 1/2.
  • the ratio of the minimum spacing a3 between the adjacent two through holes 111 in the same row and the longest side or the longest side connecting line (here, the long side a4 of the rectangular through hole 111) is greater than or equal to 1/2 and less than or equal to 2.
  • the embodiment further provides a manufacturing method of the flexible display device.
  • the manufacturing method of the flexible display device includes: forming a flexible substrate; determining a power line resistance requirement; and obtaining a line width and a through hole of the conductive layer according to the power line resistance requirement. Data; a power line is formed on the flexible substrate based on the line width of the conductive layer and the data of the via.
  • forming the power line on the flexible substrate may include: first forming a wire layer of a specific line width (ie, a line width of the conductive layer obtained according to the power line resistance requirement), and then punching the conductive layer (ie, according to the power line resistance requirement)
  • the obtained through hole data such as the shape, size, number of rows, and number of through holes, are used to punch the conductive layer.
  • the flexible display device includes: a flexible substrate 20 and a power line 21 formed on the flexible substrate 20; the power line 21 includes a conductive layer 210 having a through hole 211 therein.
  • the through hole 211 can disperse the stress generated when the power cord 21 is bent, thereby preventing the power line from being cracked or broken during the bending or folding process of the flexible display device, thereby improving the quality and reliability of the power cord when bent.
  • the material of the conductive layer 210 may be a metal material such as aluminum metal or copper metal; it may also be a composite metal layer formed by compounding a plurality of metal materials; it may also be a transparent material such as indium tin oxide.
  • the material selected for the conductive layer 210 is only required to be electrically conductive.
  • the longest one of all the sides of the through hole 211 or the longest one of the side lines of the two sides of the connecting side of the through hole 211 and the bending direction of the power line 21 Consistent.
  • the shape of the through hole 211 is elliptical.
  • the long axis of the elliptical through hole ie, the longest side line
  • the long axis of the elliptical through hole is consistent with the bending direction of the power line 21, that is, the long axis of the elliptical through hole is consistent with the bending direction of the flexible display device,
  • the through hole 211 can be made to better disperse the stress generated when the power source wire 21 is bent.
  • a row of through holes 211 is disposed on the conductive layer 210 having a width of 200 ⁇ m to 500 ⁇ m, and one or more rows of through holes 211 are evenly distributed on the conductive layer 210, thereby ensuring a certain number of through holes. The better stress generated when the power line 21 is bent is bent, and the quality and reliability of the conductive layer 210 can be ensured.
  • the number of the through holes 211 is 14, and the 14 through holes 211 are arranged in a plurality of rows (specifically, arranged in two rows), and are arranged in a plurality of rows.
  • the ratio of the cross-sectional width in the line width direction of one through hole 211 in the same row or the cross-sectional width in the line width direction of the plurality of through holes 211 in the same column to the line width of the conductive layer 210 is less than or equal to 1/2.
  • the sum of the minor axes b1 of the two elliptical through holes 211 of the same column is 2*b1 (that is, the sum of the maximum cross-sectional widths of the plurality of through holes 211 of the same column in the line width direction) and the conductive
  • the ratio of the line width b2 of the layer 210 is 1/2 or less.
  • the ratio of the minimum distance b3 between the adjacent two through holes 211 in the same row and the longest side or the longest side line is larger than Equal to 1/2 and less than or equal to 2.
  • the embodiment further provides a manufacturing method of the flexible display device.
  • the manufacturing method of the flexible display device includes: forming a flexible substrate; determining a power line resistance requirement; and obtaining a line width and a through hole of the conductive layer according to the power line resistance requirement. Data; a power line is formed on the flexible substrate based on the line width of the conductive layer and the data of the via.
  • forming the power line on the flexible substrate may include: first forming a wire layer of a specific line width (ie, a line width of the conductive layer obtained according to the power line resistance requirement), and then punching the conductive layer (ie, according to the power line resistance requirement)
  • the obtained through hole data such as the shape, size, number of rows, and number of through holes, are used to punch the conductive layer.
  • the flexible display device includes a flexible substrate 30 and a power line 31 formed on the flexible substrate 30.
  • the power line 31 includes a conductive layer 310 having a through hole 311 therein.
  • the through hole 311 can disperse the stress generated when the power line 31 is bent, thereby preventing the power line from being cracked or broken during the bending or folding process of the flexible display device, thereby improving the quality and reliability of the power line when bent.
  • the material of the conductive layer 310 may be a metal material such as aluminum metal or copper metal; it may also be a composite metal layer composed of a plurality of metal materials; it may also be a transparent material such as indium tin oxide.
  • the material selected for the conductive layer 310 may be of a conductive property.
  • the longest one of all the sides of the through hole 311 or the longest one of the side lines of the two sides of the connecting side of the through hole 311 and the bending direction of the power line 31 Consistent.
  • the shape of the through hole 311 is elliptical.
  • the long axis of the elliptical through hole ie, the longest side line
  • the long axis of the elliptical through hole is consistent with the bending direction of the power line 31
  • the long axis of the elliptical through hole is consistent with the bending direction of the flexible display device, whereby, the through hole 311 can be made to better disperse the stress generated when the power source wire 31 is bent.
  • a row of through holes 311 is disposed on the conductive layer 310 having a width of 200 ⁇ m to 500 ⁇ m, and one or more rows of through holes 311 are evenly distributed on the conductive layer 310, thereby ensuring a certain number of through holes. The better stress generated when the power line 31 is bent is bent, and the quality and reliability of the conductive layer 310 can be ensured.
  • the number of the through holes 311 is twelve, and the twelve through holes 311 are arranged in a plurality of rows (specifically, two rows are arranged), and are arranged in a plurality of rows.
  • the ratio of the cross-sectional width in the line width direction of one through hole 311 of the same column or the cross-sectional width in the line width direction of the plurality of through holes 311 in the same column is less than or equal to 1/2 of the line width of the conductive layer 310.
  • the cross-sectional width of the through hole 311 in the line width direction here, the short axis c1 of the elliptical through hole 311 and the line of the conductive layer 310.
  • the ratio of the width c2 is less than or equal to 1/2; or, when there are two through holes 311 in the same column, that is, the sum of the cross-sectional widths of the two through holes 311 in the line width direction (here, the cross-sectional width c5 and the cross-sectional width c6)
  • the sum of the sum and the line width c2 of the conductive layer 310 is 1/2 or less.
  • the ratio of the minimum pitch c3 between the adjacent two through holes 311 in the same row and the longest side or the longest side line (in this case, the long axis c4 of the elliptical through hole 311) is larger than Equal to 1/2 and less than or equal to 2.
  • the embodiment further provides a manufacturing method of the flexible display device.
  • the manufacturing method of the flexible display device includes: forming a flexible substrate; determining a power line resistance requirement; and obtaining a line width and a through hole of the conductive layer according to the power line resistance requirement. Data; a power line is formed on the flexible substrate based on the line width of the conductive layer and the data of the via.
  • forming the power line on the flexible substrate may include: first forming a wire layer of a specific line width (ie, a line width of the conductive layer obtained according to the power line resistance requirement), and then punching the conductive layer (ie, according to the power line resistance requirement)
  • the obtained through hole data such as the shape, size, number of rows, and number of through holes, are used to punch the conductive layer.
  • the flexible display device includes a flexible substrate 40 and a power supply line 41 formed on the flexible substrate 40.
  • the power supply line 41 includes a conductive layer 410 having a through hole 411 therein.
  • the through hole 411 can disperse the stress generated when the power cord 41 is bent, thereby preventing the power line from being cracked or broken during the bending or folding process of the flexible display device, thereby improving the quality and reliability of the power cord when bent.
  • the material of the conductive layer 410 may be a metal material such as aluminum metal or copper metal; it may also be a composite metal layer composed of a plurality of metal materials; it may also be a transparent material such as indium tin oxide.
  • the material selected for the conductive layer 410 is only required to be electrically conductive.
  • the longest one of all the sides of the through hole 411 or the longest one of the side lines of the two sides of the connecting side of the through hole 411 and the bending direction of the power line 41 Consistent.
  • the shape of the through hole 411 is a diamond shape.
  • the long diagonal line of the diamond-shaped through hole ie, the longest side line
  • the long diagonal line of the diamond-shaped through hole is consistent with the bending direction of the power line 41, that is, the long diagonal line of the diamond-shaped through hole is consistent with the bending direction of the flexible display device.
  • the through hole 411 can be made to better disperse the stress generated when the power source wire 41 is bent.
  • a row of through holes 411 is disposed on the conductive layer 410 having a width of 200 ⁇ m to 500 ⁇ m, and one or more rows of through holes 411 are evenly distributed on the conductive layer 410, thereby ensuring a certain number of through holes. The better stress generated when the power line 41 is bent is bent, and the quality and reliability of the conductive layer 410 can be ensured.
  • the number of the through holes 411 is one, and one through hole 411 is located at an intermediate position of the conductive layer 410.
  • the ratio of the cross-sectional width in the line width direction of one through hole 411 of the same column or the cross-sectional width in the line width direction of the plurality of through holes 411 in the same column and the line width of the conductive layer 410 is 1/2 or less.
  • the ratio of the short diagonal line d1 of the rhombic through hole 411 to the line width d2 of the conductive layer 410 is 1/2 or less.
  • the embodiment further provides a manufacturing method of the flexible display device.
  • the manufacturing method of the flexible display device includes: forming a flexible substrate; determining a power line resistance requirement; and obtaining a line width and a through hole of the conductive layer according to the power line resistance requirement. Data; a power line is formed on the flexible substrate based on the line width of the conductive layer and the data of the via.
  • forming the power line on the flexible substrate may include: first forming a wire layer of a specific line width (ie, a line width of the conductive layer obtained according to the power line resistance requirement), and then punching the conductive layer (ie, according to the power line resistance requirement)
  • the obtained through hole data such as the shape, size, number of rows, and number of through holes, are used to punch the conductive layer.
  • the through hole may have other shapes, such as a circular shape, a square shape, an irregular shape, etc.
  • the shape of the through hole is a regular shape, thereby facilitating the passage of the power line resistance requirement.
  • Hole data such as the specific shape, size, number of rows and number of through holes, are manufactured.
  • the through holes on the conductive layer of the flexible display device may also be recessed regions of other shapes (for example, a blind hole, a region where the through hole and the blind hole are mixed), and the recessed region of the present invention
  • the specific shape is not limited.
  • the flexible display device adopts a thin film transistor structure, wherein the conductive layer is electrically connected to the source electrode, the drain electrode, the gate electrode, the cathode or the anode of the flexible display device; or the conductive layer constitutes the source electrode of the flexible display device , drain electrode, gate electrode, cathode or anode.
  • the conductive layer provided by the embodiment of the present invention is provided with a recessed region capable of dispersing bending stress, when the conductive layer constitutes different conductive portions of the flexible display device, the bending resistance of the different conductive portions is resisted. Performance will improve.
  • the present invention does not limit the specific portion of the flexible display device that constitutes the conductive layer.
  • the recessed region (for example, a through hole or a blind hole) of the conductive layer of the flexible display device provided by any of the above embodiments of the present invention may be filled with an organic material to facilitate buffering the bending stress of the flexible display device.
  • the projection of the shape of the at least one recessed area on a plane parallel to the flexible substrate or a plane perpendicular to the flexible substrate comprises a combination of one or more of the following shapes: rectangle, Triangle, trapezoid, diamond, circle, ellipse, sinusoidal, twisted and zigzag.
  • the recessed regions are disposed in a plurality of different shapes to fully disperse the stress of the conductive layer, thereby further dispersing the stress influence of the flexible display device provided by the embodiment of the present invention.
  • FIG. 5 is a schematic structural view of a flexible display device according to Embodiment 5 of the present invention.
  • a flexible display device according to a fifth embodiment of the present invention includes a conductive layer 4, an insulating layer 2, and a flexible layer which are sequentially arranged in a top-down direction (from top to bottom as shown in FIG. 5).
  • the substrate 3, the conductive layer 4, the insulating layer 2 and the flexible substrate 3 which are stacked in the top-down direction are divided into a bending zone N2 and a non-bending zone N1 in the extending direction, and the thickness of the conductive layer 4 of the bending zone N2
  • the lower edge of the conductive layer 4 (where the lower edge is the lower edge of the stacking direction as shown in FIG.
  • the upper edge is an upper edge of the stacking direction as shown in FIG. 5) and is lower than the upper edge of the conductive layer 4 of the non-bending region N1 in the horizontal direction (wherein the upper edge is in the stacking direction as shown in FIG. 5) edge).
  • extension direction mentioned in the embodiment of the present invention refers to the horizontal direction, that is, the left-right direction shown in FIG. 5, and the non-extension direction refers to the vertical direction, that is, the up-and-down direction shown in FIG.
  • the flexible display device provided by the embodiment of the present invention may not include the insulating layer 2.
  • the resistance of the conductive layer before the improvement is:
  • S1 W*h1
  • W represents the width of the conductive layer
  • L represents the length of the conductive layer
  • h1 represents the thickness of the conductive layer
  • S1 represents the cross-sectional area of the conductive layer
  • ⁇ represents the density value of the conductive layer
  • R1 represents the conductive layer. resistance.
  • the improved conductive layer resistance is:
  • L1 represents the length of the conductive layer in the bending zone
  • L2 and L3 represent thickening
  • S1 represents the cross-sectional area of the conductive layer of the corresponding bending zone
  • S2 and S3 represent the cross-section of the conductive layer of the corresponding thickened non-bending zone area.
  • the flexible display device divides the flexible display device into a bending region and a non-bending region along the extending direction, and sets the thickness of the conductive layer of the bending region to be larger than the thickness of the conductive layer of the non-bending region.
  • the method achieves the purpose of reducing the resistance value of the conductive layer of the flexible display device without affecting the bending performance of the bending region of the flexible display device, and provides a necessary condition for applying the flexible display device to the large-screen foldable mobile terminal. .
  • the upper edge of the conductive layer 4 of the bending region N2 (where the upper edge is the upper edge of the stacking direction as shown in FIG. 5) and the non-bending region may also be used.
  • the upper edge of the conductive layer 4 of N1 (wherein the upper edge is the upper edge of the stacking direction as shown in FIG. 5) is on the same horizontal line (ie, the collinear line), and the lower edge of the conductive layer 4 of the bent region N2 (where The lower edge is a lower edge of the stacking direction as shown in FIG. 5) the lower edge of the conductive layer 4 which is higher in the horizontal direction than the non-bending region N1 (wherein the lower edge is in the stacking direction as shown in FIG.
  • the purpose of the lower edge) to achieve the thickness of the conductive layer 4 of the bending region N2 is greater than the thickness of the conductive layer 4 of the non-bending region N1, so as to sufficiently increase the adaptability and expandability of the flexible display device provided by the embodiment of the present invention.
  • the conductive layer 4 in the embodiment of the present invention is provided as a metal layer so that the conductive layer 4 can better exert a conductive effect.
  • the material of the conductive layer 4 may be made of a conductive plastic or a conductive rubber, which is not limited in the present invention.
  • FIG. 6 is a schematic structural view of a flexible display device according to Embodiment 6 of the present invention.
  • the sixth embodiment of the present invention is extended on the basis of the fifth embodiment of the present invention.
  • the sixth embodiment of the present invention is substantially the same as the fifth embodiment. The differences will be described below, and the details are not described again.
  • the upper edge of the conductive layer 4 of the non-bending area N1 of the flexible display device according to the sixth embodiment of the present invention (wherein the upper edge is the upper edge of the stacked arrangement direction as shown in FIG. 6)
  • the extending direction ie, the horizontal direction
  • the lower edge (wherein the lower edge is the lower edge of the stacking direction as shown in FIG. 6) is lower in the extending direction (ie, the horizontal direction) than the lower edge of the conductive layer 4 of the bending region N2 (wherein the lower edge is as The lower edge of the stacking direction shown in Fig. 6).
  • the flexible display device provides that the upper edge of the conductive layer 4 of the non-bending region N1 is set to be higher than the upper edge of the conductive layer 4 of the bending region N2 in the extending direction (ie, the horizontal direction).
  • the lower edge of the conductive layer 4 of the non-bending region N1 is disposed in a manner that is shorter than the lower edge of the conductive layer 4 of the bending region N2 in the extending direction (ie, the horizontal direction), that is, the conductive layer 4 from the non-bending region N1.
  • the manner of increasing the thickness of the conductive layer 4 of the non-bending area N1 at both ends of the non-extension direction respectively achieves better reduction of the resistance value of the conductive layer 4 of the flexible display device without affecting the flexible display device.
  • the upper edge and/or the lower edge of the conductive layer 4 of the non-bending area N1 and the upper edge and/or the lower edge of the conductive layer 4 of the corresponding bending area N2 may also be collinear. Ok, it is not mandatory to be a horizontal line.
  • the upper edge and/or the lower edge of the conductive layer 4 of the bending region N2 are The shape of the zigzag or the wavy shape is sufficient to sufficiently improve the scalability and adaptability of the flexible display device provided by the embodiment of the present invention.
  • Fig. 7a is a schematic structural view showing a structure of a thin film transistor of a flexible display device according to a seventh embodiment of the present invention.
  • 7b is a schematic view showing the projection of a gate electrode of a thin film transistor structure of a flexible display device according to Embodiment 7 of the present invention.
  • the gate electrode 1 of the thin film transistor structure may include a top gate 71 disposed over the channel layer 72 of the thin film transistor structure and a bottom gate 73 disposed under the channel layer 72.
  • the top gate 71 is provided with at least one through hole 711.
  • a projection 811 of the via 711 on the top gate 71 on a plane 82 parallel to the channel layer 72 is covered by a projection 83 of the bottom gate 73 on the plane 82.
  • the gate electrode 1 is designed to include a bottom gate 73 and a top gate 71 disposed on both sides of the channel layer 72, and the top gate 71 is provided with at least one through hole 711 and forms a complementary structure with the bottom gate 73.
  • the through holes on the top gate 71 can disperse the stress concentration generated when the gate electrode 1 is bent or deformed, enhance the bending resistance of the gate electrode 1, and can effectively prevent the bending or fracture failure of the thin film transistor structure. Meanwhile, since the top gate 71 and the bottom gate 73 form a complementary structure, although the top gate 71 has a via hole 711, the channel layer region corresponding to the via hole 711 of the top gate 71 is disposed in the channel layer region.
  • the gate electrode 1 provided with the top gate 71 and the bottom gate 73 complementarily disposed does not affect the performance parameters of the thin film transistor structure (for example, the aspect ratio of the thin film transistor structure).
  • the gate electrode 1 of the thin film transistor structure may include a top gate 71 disposed over the channel layer 72 of the thin film transistor structure and a bottom gate 73 disposed under the channel layer 72.
  • the bottom gate 73 is provided with at least one through hole 711.
  • a projection 811 of the via 711 on the bottom gate 73 on a plane 82 parallel to the channel layer 72 is covered by a projection 81 of the top gate 71 on a plane 82 parallel to the channel layer 72.
  • the structure of the gate electrode 1 provided by the embodiment of the present invention is not limited thereto, and the gate electrode 1 may be configured such that the top gate 71 and the bottom gate 73 are each provided with at least one through hole 711.
  • the projection 811 of the through hole 711 on the top gate 71 on the plane 82 parallel to the channel layer 72 is covered by the projection 83 of the bottom gate 73 on the plane 82, and the through hole 711 on the bottom gate 73 is in the channel Projection 811 on plane 82 parallel to layer 72 may be covered by projection 81 of top grid 71 on plane 82.
  • the present invention is described by way of example in which the through-holes 711 are disposed on the top gate 71.
  • the embodiment of the present invention does not specifically limit the through-holes 711 disposed on the top gate 71 or the bottom gate 73.
  • the shape of the projection 811 of the via 711 on the top gate 71 on the plane 82 parallel to the channel layer 72 may be parallel to the bottom gate 73 in the channel layer 72.
  • the shape of the projection 83 on the plane 82 is the same.
  • the projection 811 of the top gate 71 on the plane 82 parallel to the channel layer 72 and the projection 83 of the bottom gate 73 on the plane 82 parallel to the channel layer 72 are the smallest. Therefore, the performance of the thin film transistor structure can be improved to some extent.
  • the projection 811 of the top gate 71 on the plane 82 parallel to the channel layer 72 and the bottom gate 73 on the plane 82 parallel to the channel layer 72 are allowed in view of process variations and misalignment between the layers.
  • the projection 83 has an overlapping area.
  • the bottom gate insulating layer 731 may further include a hollow region or at least one opening, and the hollow region or the at least one opening may be filled with an organic material 732 to ensure the bottom gate insulating layer.
  • the flatness of the upper channel layer 72 is 731; at the same time, it is more advantageous to buffer the bending stress by filling the at least one opening with the organic material 732 having better bending resistance.
  • the top gate insulating layer 712 may also include a hollowed out region or at least one opening, and the hollowed out region or at least one of the openings may also be filled with the organic material 732.
  • the hollowed-out region of the bottom gate insulating layer 731 is shaped to be complementary to the bottom gate 73.
  • the shape of the hollow region of the top gate insulating layer 712 / the bottom gate insulating layer 731 or the position of the opening provided by the embodiment of the present invention is not limited to that shown in FIG. 7a, and the top gate insulating layer 712 is used in the embodiment of the present invention.
  • the shape of the hollow region of the bottom gate insulating layer 731 and the position and number of the openings are not particularly limited.
  • FIG. 7b shows that the number of the through holes 711 of the top gate 71 is one, the through holes 711 of the top gate 71 provided by the embodiment of the present invention may be plural.
  • the plurality of through holes 711 may be arranged in a row or a plurality of rows.
  • the number of the through holes 711 and the specific arrangement manner are not limited in the embodiment of the present invention.
  • the seventh and eighth embodiments of the present invention solve the display failure caused by stress concentration in the conventional thin film transistor structure during bending deformation by providing a recessed region in the gate electrode of the thin film transistor structure in the flexible display device. The problem.
  • FIG. 9 is a flow chart showing the fabrication of a gate electrode of a thin film transistor structure of a flexible display device according to Embodiment 9 of the present invention.
  • a ninth embodiment of the present invention provides a method for fabricating a gate electrode of a thin film transistor structure, and the method for fabricating the gate electrode 1 may include:
  • S11 Making a bottom gate 73.
  • at least one through hole 711 is required to be formed on the bottom gate 73 when the bottom gate 73 is formed, and the projection of the through hole 711 on the plane 82 parallel to the channel layer 72 should be on the plane 82 of the top gate 71 which is subsequently prepared. Covered by the projection.
  • the bottom gate 73 can be fabricated on a substrate, and the material and internal structure of the substrate are not limited in the present invention.
  • a bottom gate insulating layer 731 and a channel layer 72 are sequentially formed over the bottom gate 73.
  • the bottom gate insulating layer 731 is used to form insulation between the bottom gate 73 and the channel layer 72.
  • a top gate insulating layer 712 and a top gate 71 are formed on the channel layer 72.
  • at least one through hole 711 can be formed on the top gate 71 when the top gate 71 is fabricated, and the projection of the through hole 711 on the plane 82 should be projected by the bottom gate 73 on the plane 82 parallel to the channel layer 72. cover.
  • the gate electrode 1 includes a bottom gate 73 and a top gate 71 disposed on both sides of the channel layer 72, and at least one through hole 711 is disposed on the top gate 71 and/or the bottom gate 73.
  • the top gate 71 and the bottom gate 73 form a complementary structure. This can enhance the bending resistance of the gate electrode 1 while ensuring the electrical properties of the thin film transistor structure.
  • FIG. 10 is a schematic diagram showing a bending line experimental data broken line of the flexible display device according to Embodiment 10 of the present invention.
  • the power line used in the bending performance experiment is a metal wire having a width of 500 ⁇ m, and the conductive layer is covered with no protective layer (ie, the non-AA area of the power supply line is the test portion, and the non-display area is).
  • the horizontal axis of the coordinate in FIG. 10 represents the through hole diameter of the power supply line
  • the vertical axis represents the bending endurance life of the power supply line.
  • a bending line of the bending performance experimental data shown in FIG. 10 is formed by testing the bending life of the unprotected power supply line at different apertures of the through hole.
  • the bending endurance life of the power supply line is approximately equal to the bending endurance life when the through hole aperture is 0 ⁇ m, and the through hole diameter of the power supply line is greater than 40 ⁇ m.
  • the bending life of the power cord increases linearly; when the through hole diameter of the power cord is equal to 50 ⁇ m, the bending life of the power cord is significantly higher than that of the through hole with a hole diameter of 0 ⁇ m.
  • the through hole diameter of the power supply line is less than 40 ⁇ m, since the through hole diameter is too small, the through hole itself may expand and break as a starting point of the crack, thereby reducing the stability of the flexible display device provided by the embodiment of the present invention, and thus the power supply.
  • the through hole diameter of the wire is less than 40 ⁇ m, the bending resistance of the flexible display device is poor.
  • the purpose of improving the bending life of the unprotected power line can be achieved by providing a through hole on the power line.
  • the a/w value of the power line uncovered layer area is greater than 0.1 so that the bending life of the unprotected power line can be significantly improved.
  • the power line width w 10 ⁇ m, and the power line is not covered by any other layer (such as an organic layer), the through hole aperture of the power line is higher than 0.8 ⁇ m, preferably, The pore diameter is higher than 1 ⁇ m.
  • the through holes formed on the power line can be replaced with blind holes to avoid the influence of the preparation process of the through holes on the performance of other structures of the flexible display device.
  • the flexible display device provided by the embodiment of the present invention may be a case where only a through hole or a blind hole is used, or a case where a through hole and a blind hole coexist.
  • the through hole or the blind hole may be a rectangular hole, a triangular hole, a trapezoidal hole, a diamond hole, a circular hole, an elliptical hole or an irregular hole, etc., when a through hole or a blind hole When it is a square hole or a circular hole, the aperture a is the side length or the diameter. When the through hole or the blind hole is an irregular hole, the aperture a is the shortest side or all the connections of all the sides of the irregular hole. The length of the shortest side of the side lines of the two sides.
  • the tenth embodiment of the present invention provides a through hole and/or a blind hole in a metal wire of a non-protective layer covering area in the flexible display device, and defines a ratio of a hole diameter and a hole hole diameter to a metal wire width ratio, The bending life of the metal wire in the unprotected layer coverage area is improved.
  • the power line used in the bending performance test is a metal wire having a width of 500 ⁇ m, and the conductive layer is covered with a protective layer (ie, the test portion is the AA area of the power supply line, the display area).
  • the horizontal axis of the coordinate in FIG. 11 represents the through hole diameter of the power supply line
  • the vertical axis represents the bending endurance life of the power supply line.
  • a bending line of the bending performance experimental data shown in FIG. 11 is formed by repeatedly testing the bending resistance life of the power line having the protective layer at different apertures of the through hole.
  • the bending endurance life of the power supply line is approximately equal to the bending endurance life when the through hole aperture is 0 ⁇ m, and the through hole diameter of the power supply line is less than 50 ⁇ m.
  • the flexural life of the power cord is higher than the flexural life of the through hole with a hole diameter of 0 ⁇ m; when the through hole diameter of the power cord is between 5 ⁇ m and 35 ⁇ m, the bending life of the power cord is significantly higher than the through hole diameter of 0 ⁇ m. The bending life of the time.
  • the a/w value of the power line covered by the protective layer region is less than 0.1, it is possible to improve the bending life of the power line having the protective layer by opening the through hole on the power line.
  • the a/w value of the power line covered by the protective layer region is in the range of 0.01-0.07, so that the bending life of the power line with the protective layer can be significantly improved.
  • the a/w value of the protective layer covered by the power line is in the range of 0.01-0.04 in order to increase the bending life of the protective layer power line by 500%.
  • the power line width w 400 ⁇ m
  • the power line has a pillar layer (ie, a protective layer) coated
  • the through hole aperture of the power line is less than 40 ⁇ m, so as to be able to pass the power supply.
  • a through hole is opened on the line to improve the bending life of the power line with the protective layer.
  • the power line width w 400 ⁇ m
  • the power line is coated with a pillar layer (ie, a protective layer)
  • the through hole aperture value ranges from 4 ⁇ m to 16 ⁇ m, so that the protective layer is powered.
  • the bending life of the wire is increased by 500%.
  • the through holes formed on the power line can be replaced with blind holes to avoid the performance of other structures of the flexible display device during the preparation process of the through holes. influences. That is to say, the flexible display device provided by the embodiment of the present invention may be a case where only a through hole or a blind hole is used, or a case where a through hole and a blind hole coexist.
  • the through hole or the blind hole may be a rectangular hole, a triangular hole, a trapezoidal hole, a diamond hole, a circular hole, an elliptical hole or an irregular hole, etc., when the through hole or the blind hole
  • the aperture a is a side length or a diameter.
  • the aperture a is the longest one of all the sides of the irregular hole or The length of the longest side of all the side lines connecting the two sides of the side.
  • the eleventh embodiment of the present invention provides a through hole and/or a blind hole in a metal wire having a protective layer covering area in the flexible display device, and defines a ratio of a hole diameter and a metal hole width ratio of the through hole and/or the blind hole The bending life of the metal wire having the protective layer coverage area is improved.
  • the flexible wire ie, power line
  • the flexible wire is applied to the anode and cathode structure to improve the bending life of the anode and cathode structures.

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Abstract

L'invention concerne un dispositif d'affichage flexible et son procédé de fabrication. Le dispositif d'affichage flexible comprend un substrat flexible (10) et une couche électro-conductrice (110) formée sur le substrat flexible. Au moins une zone évidée (111) est disposée sur la couche électro-conductrice. Du fait de l'existence de la région évidée, la couche électro-conductrice est exempte de fissures ou ne peut pas être rompue lors du processus dans lequel le dispositif d'affichage flexible est courbé ou plié, ce qui permet d'améliorer la qualité et la fiabilité de la couche électro-conductrice lorsque la couche électro-conductrice est courbée.
PCT/CN2017/116916 2016-12-27 2017-12-18 Dispositif d'affichage flexible et son procédé de fabrication WO2018121322A1 (fr)

Priority Applications (4)

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EP17885656.3A EP3564998A4 (fr) 2016-12-27 2017-12-18 Dispositif d'affichage flexible et son procédé de fabrication
JP2019520113A JP7312104B2 (ja) 2016-12-27 2017-12-18 フレキシブル表示装置及びその製造方法
KR1020197010450A KR20190045353A (ko) 2016-12-27 2017-12-18 플렉서블 표시 장치 및 그 제조 방법
US16/318,295 US20190237490A1 (en) 2016-12-27 2019-01-16 Flexible display device and manufacturing method therefor

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CN201611229509.9 2016-12-27
CN201611229509 2016-12-27
CN201710774762.0A CN108257971B (zh) 2016-12-27 2017-08-31 柔性显示装置及其制造方法
CN201710774762.0 2017-08-31

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* Cited by examiner, † Cited by third party
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CN110212089A (zh) * 2019-05-15 2019-09-06 武汉华星光电半导体显示技术有限公司 柔性oled显示面板
CN111199685A (zh) * 2018-11-19 2020-05-26 群创光电股份有限公司 拼接装置和电子装置
CN111430437A (zh) * 2020-04-21 2020-07-17 Oppo广东移动通信有限公司 一种柔性显示屏、电子设备、及制备柔性显示屏的方法
CN111508972A (zh) * 2020-04-21 2020-08-07 武汉华星光电半导体显示技术有限公司 柔性阵列基板、柔性显示面板及其制备方法
CN111816613A (zh) * 2020-06-29 2020-10-23 合肥维信诺科技有限公司 显示面板的制作方法、显示面板母板
WO2020237963A1 (fr) * 2019-05-31 2020-12-03 武汉华星光电半导体显示技术有限公司 Écran d'affichage et dispositif d'affichage
CN112582433A (zh) * 2020-12-25 2021-03-30 厦门天马微电子有限公司 一种显示面板及显示装置
CN113516918A (zh) * 2021-06-09 2021-10-19 荣耀终端有限公司 一种叠层显示模组及电子设备

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CN111199685A (zh) * 2018-11-19 2020-05-26 群创光电股份有限公司 拼接装置和电子装置
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CN110212089B (zh) * 2019-05-15 2022-07-29 武汉华星光电半导体显示技术有限公司 柔性oled显示面板
WO2020237963A1 (fr) * 2019-05-31 2020-12-03 武汉华星光电半导体显示技术有限公司 Écran d'affichage et dispositif d'affichage
CN111508972A (zh) * 2020-04-21 2020-08-07 武汉华星光电半导体显示技术有限公司 柔性阵列基板、柔性显示面板及其制备方法
CN111430437B (zh) * 2020-04-21 2023-03-03 Oppo广东移动通信有限公司 一种柔性显示屏、电子设备、及制备柔性显示屏的方法
CN111430437A (zh) * 2020-04-21 2020-07-17 Oppo广东移动通信有限公司 一种柔性显示屏、电子设备、及制备柔性显示屏的方法
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CN111816613B (zh) * 2020-06-29 2024-04-19 合肥维信诺科技有限公司 显示面板的制作方法、显示面板母板
CN112582433A (zh) * 2020-12-25 2021-03-30 厦门天马微电子有限公司 一种显示面板及显示装置
CN112582433B (zh) * 2020-12-25 2022-08-19 厦门天马微电子有限公司 一种显示面板及显示装置
CN113516918A (zh) * 2021-06-09 2021-10-19 荣耀终端有限公司 一种叠层显示模组及电子设备
CN113516918B (zh) * 2021-06-09 2022-04-29 荣耀终端有限公司 一种叠层显示模组及电子设备

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