WO2018120288A1 - Oled保护膜的封装结构及其封装方法 - Google Patents

Oled保护膜的封装结构及其封装方法 Download PDF

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Publication number
WO2018120288A1
WO2018120288A1 PCT/CN2017/070534 CN2017070534W WO2018120288A1 WO 2018120288 A1 WO2018120288 A1 WO 2018120288A1 CN 2017070534 W CN2017070534 W CN 2017070534W WO 2018120288 A1 WO2018120288 A1 WO 2018120288A1
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Prior art keywords
glass substrate
mask
groove
column
protective film
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English (en)
French (fr)
Inventor
闵浩涵
余威
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US15/325,084 priority Critical patent/US20180190939A1/en
Publication of WO2018120288A1 publication Critical patent/WO2018120288A1/zh
Anticipated expiration legal-status Critical
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/841—Self-supporting sealing arrangements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques

Definitions

  • the present invention relates to the technical field of OLED packaging, and in particular to a package structure of an OLED protective film and a packaging method thereof.
  • OLED Organic Light-Emitting Diode
  • organic light-emitting diodes have many advantages such as self-illumination, solid state, wide viewing angle, fast response, etc., and have great application prospects in flat panel display.
  • OLED is considered to be LCD (Liquid).
  • LCD Liquid
  • PDP Plasma Display Panel
  • Current OLED It has been widely used in the field of display and lighting.
  • a thin film package of an OLED device generally uses an inorganic layer and a laminated structure of an organic layer, wherein the inorganic layer is generally PECVD (Plasma Enhanced). Chemical Vapor Deposition - Plasma Enhanced Chemical Vapor Deposition), ALD (Atomic Layer Deposition) --Atomic layer deposition,PLD (Plasma layer deposition) - Plasma layer deposition) and other techniques, in the process of film formation of the inorganic layer will use Mask (mask), as shown in Figure 1, Figure 1 is the mask and glass substrate in the formation of OLED protective film in the prior art A cross-sectional view of the mating structure; affected by the design of the mask 1 , after the mask 1 is covered on the glass substrate 4, a gap (GAP) 3 is formed between the mask and the glass substrate 4.
  • FIG. 2 is a partial structural diagram of the OLED protective film in the prior art.
  • the protective film 5 When the protective film 5 is formed on the OLED device 2 by using PECVD or the like, the protective film 5 will be gapped. 3 extension, which in turn affects the cutting position of the entire OLED panel and widens the black frame at the edge of the OLED emitting surface, which is disadvantageous for the narrow bezel display design.
  • Mark 10 in Figure 1 is the hollowed out area of the mask.
  • the embodiment of the invention provides a package structure of an OLED protective film and a packaging method thereof, so as to solve the gap between the protective film and the mask substrate when forming a protective film on the OLED in the prior art. Extended technical issues.
  • an embodiment of the present invention provides a package structure of an OLED protective film, the package structure including a mask plate and a glass substrate provided with an OLED device; and the OLED device is disposed on the mask plate a void corresponding to the size, a gap is formed between the non-hollowed region on the mask and the glass substrate, and the glass substrate is provided with a groove at a position corresponding to the gap, the mask a column is disposed on a side opposite to the glass substrate, and when the mask plate is aligned with the glass substrate, the column is inserted into the groove; when a protective film is formed on the OLED device, the column is Used to block the protective film.
  • the pillars on the mask are formed by depositing an inorganic material layer on the mask, and then undergoing an exposure, development, and etching process.
  • the column on the mask has a trapezoidal cross section; the shape of the groove on the glass substrate is adapted to the shape of the column.
  • the groove on the glass substrate is disposed along the circumference of the OLED device, and the depth of the groove is 10 um to 20 um.
  • the height of the pillar is smaller than the sum of the thickness of the OLED device and the depth of the groove on the glass substrate, so that when the pillar is inserted into the groove, the mask is The board is in close contact with the OLED device.
  • the present invention also provides a method for packaging an OLED protective film, the packaging method comprising the steps of:
  • the glass substrate provided with the groove is closely matched with the mask plate provided with the column structure, the column is inserted into the groove, and the mask plate is in close contact with the OLED device, and the mask is a gap is formed between the non-hollowed region on the film plate and the glass substrate;
  • the column is used to block the protective film.
  • the pillars on the mask are formed by depositing an inorganic material layer on the mask, and then undergoing an exposure, development, and etching process.
  • the column on the mask has a trapezoidal cross section; the shape of the groove on the glass substrate is adapted to the shape of the column.
  • the groove on the glass substrate is disposed along the circumference of the OLED device, and the depth of the groove is 10 um to 20 um.
  • the height of the pillar is smaller than the sum of the thickness of the OLED device and the depth of the groove on the glass substrate, so that when the pillar is inserted into the groove, the mask is The board is in close contact with the OLED device.
  • the package structure and the packaging method of the OLED protective film provided by the present invention can form a matching groove and a column structure on the glass substrate and the mask plate, and the column can block when the OLED forms a protective film.
  • the protective film extends between the glass substrate and the mask.
  • the package structure of the OLED protective film can narrow the black frame at the edge of the OLED light emitting surface, which is favorable for promoting the development of the narrow bezel display technology.
  • FIG. 1 is a cross-sectional view showing a structure in which a mask plate and a glass substrate are mated in a process of forming an OLED protective film in the prior art
  • FIG. 2 is a partial structural schematic view of a prior art OLED protective film after formation
  • FIG. 3 is a schematic structural view showing a state in which a mask plate and a glass substrate are separated from each other in a preferred embodiment of the OLED protective film package structure of the present invention
  • FIG. 4 is a schematic structural view showing a state in which the mask plate and the glass substrate are in close contact with each other in the embodiment of FIG. 3;
  • FIG. 5 is a schematic structural view showing a package structure of an OLED protective film forming a protective film
  • FIG. 6 is a schematic flow chart of a preferred embodiment of a method for packaging an OLED protective film of the present invention.
  • FIG. 3 is a schematic structural view showing a state in which a mask plate and a glass substrate are separated in a preferred embodiment of the OLED protective film package structure of the present invention
  • FIG. 4 is a mask plate and a glass in the embodiment of FIG. Schematic diagram of the substrate in a state of close fitting.
  • the package structure includes a mask 100 and a glass substrate 200.
  • the OLED device 210 is disposed on the glass substrate 200.
  • the mask plate 100 is provided with a hollow region 110 corresponding to the size of the OLED device 210, and between the non-hollow region 120 on the mask plate 100 and the glass substrate 200.
  • a gap 300 is formed, and the glass substrate 200 is provided with a recess 220 at a position corresponding to the gap 300.
  • the mask 100 is provided with a post 130 on a side opposite to the glass substrate 200, and the mask 100 is aligned with the glass substrate 200. The post 130 is inserted into the recess 220.
  • FIG. 5 is a schematic structural diagram of forming a protective film by a package structure of an OLED protective film.
  • the pillars 130 on the mask 100 are used to block the protective film 400, thereby restricting the protective film 400 from extending excessively into the gap 300, and the protective film 400 can only extend to the position of the pillar 130. (on the right side of the column 130 in the figure), in this case, the extension length and the extended position of the protective film 400 are largely limited.
  • the pillars 130 on the mask 100 are formed by depositing a layer of inorganic material on the mask 100 and then undergoing an exposure, development, and etching process.
  • the processes of exposure, development, etching, etc. during the formation of the structure of the column 130 are within the understanding of those skilled in the art and will not be described in detail herein.
  • the inorganic material may be SiN, or SiO, SiON or the like. It is not listed here.
  • the column 130 on the mask 100 has a trapezoidal cross section; the shape of the groove 220 on the glass substrate 200 is adapted to the shape of the column 130.
  • the cross-sectional shape of the upper pillar 130 of the mask 100 may also be other shapes.
  • the groove 220 on the glass substrate 200 may be disposed along the circumference of the OLED device 210, and the depth of the groove is 10 um to 20 um. After determining the position and the like of the OLED device 210 on the glass substrate, an inverted trapezoidal groove 220 having a depth of 10 um to 20 um is formed on the glass substrate around each OLED device 210 by an etching technique.
  • the mask 100 is in close contact with the OLED device 210, and the height H of the pillar 130 is designed to be smaller than the thickness T of the OLED device 210 and the depth D of the groove 220 on the glass substrate 200. with.
  • PECVD Pulsma Enhanced Chemical Vapor
  • the Deposition-plasma enhanced chemical vapor deposition method forms a protective film 400 which is preferably composed of an inorganic material such as SiN, or SiO, SiON or the like.
  • PECVD ionizes a gas containing a film-constituting atom by means of microwave or radio frequency, and forms a plasma locally.
  • the plasma is chemically active and reacts easily, and a desired film is deposited on the substrate.
  • the activity of the plasma is utilized to promote the reaction, and thus the CVD is called plasma enhanced chemical vapor deposition (PECVD).
  • PECVD has the advantages of low basic temperature, fast deposition rate, good film formation quality, less pinholes, and less cracking.
  • the package structure of the OLED protective film provided by the present invention forms a matching groove and a column structure on the glass substrate and the mask plate, and the column can block the protective film to the glass when the OLED forms a protective film.
  • the encapsulation structure of the OLED protective film can narrow the black frame on the edge of the OLED light emitting surface, which is favorable for promoting the development of the narrow bezel display technology.
  • FIG. 6 is a schematic flow chart of a preferred embodiment of a method for packaging an OLED protective film according to the present invention.
  • the package method includes but is not limited to the following steps.
  • Step S610 forming a groove on the glass substrate provided with the OLED device.
  • the grooves on the glass substrate may be disposed along the circumference of the OLED device, and the depth of the grooves is preferably 10 um to 20 um.
  • an inverted trapezoidal groove having a depth of 10 um to 20 um is formed on the glass substrate around each OLED device by an etching technique.
  • step S620 a pillar structure is formed on the mask plate provided with the hollowed out area.
  • the size of the cutout region corresponds to the size of the OLED device.
  • the cross section of the column on the mask is trapezoidal; the shape of the groove on the glass substrate is adapted to the shape of the column and is also trapezoidal.
  • the cross-sectional shape of the pillar on the mask may be other shapes as long as it fits the shape of the groove.
  • the pillars on the mask are formed by depositing an inorganic material layer on the mask and then exposing, developing, and etching processes.
  • the processes of exposure, development, etching, etc. in the process of forming the pillar structure are within the understanding of those skilled in the art and will not be described in detail herein.
  • the inorganic material may be SiN, or SiO, SiON or the like. It is not listed here.
  • step S610 and step S620 in this embodiment may be reversed, that is, the steps of forming the groove on the glass substrate and forming the column structure on the mask are in no particular order, and which step may be preceded.
  • Step S630 the glass substrate provided with the groove is closely matched with the mask plate provided with the column structure; at this time, the column is inserted into the groove, the mask plate is closely attached to the OLED device, and the non-hollowed area on the mask plate is A gap is formed between the glass substrates.
  • the mask is attached to the OLED device, and the height H of the pillar is designed to be smaller than the sum of the thickness T of the OLED device and the depth D of the groove on the glass substrate. See Figure 3 for details.
  • Step S640 forming a protective film on the OLED device through the hollow region.
  • FIG. 5 is a schematic structural diagram of a package structure of an OLED protective film forming a protective film.
  • the pillar restricts the protective film from excessively extending into the void, and the protective film can only extend to the position of the pillar (the right side of the pillar in the figure), thus greatly limiting the extension of the protective film. Length and extended position.
  • PECVD Plasma Enhanced Chemical Vapor
  • CVD Deposition-plasma-enhanced chemical vapor deposition
  • the protective film is preferably made of an inorganic material such as SiN or SiO or SiON.
  • PECVD ionizes a gas containing a film-constituting atom by means of microwave or radio frequency, and forms a plasma locally.
  • the plasma is chemically active and reacts easily, and a desired film is deposited on the substrate.
  • the activity of the plasma is utilized to promote the reaction, and thus the CVD is called plasma enhanced chemical vapor deposition (PECVD).
  • PECVD has the advantages of low basic temperature, fast deposition rate, good film formation quality, less pinholes, and less cracking.
  • the OLED protective film packaging method provided by the present invention forms a matching groove and a column structure on a glass substrate and a mask plate, and the column can block the protective film to the glass when the OLED forms a protective film.
  • the encapsulation structure of the OLED protective film can narrow the black frame on the edge of the OLED light emitting surface, which is favorable for promoting the development of the narrow bezel display technology.

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  • Physics & Mathematics (AREA)
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Abstract

一种OLED保护膜的封装结构及其封装方法，该封装结构包括掩膜板(100)以及设有OLED器件(210)的玻璃基板(200)；掩膜板(100)上设有与OLED器件(210)尺寸相对应的镂空区(110)，掩膜板(100)上的非镂空区(120)与玻璃基板(200)之间形成有空隙(300)，玻璃基板(200)在对应空隙(300)的位置处设有凹槽(220)，掩膜板(100)在相对玻璃基板(200)的一侧设有立柱(130)，掩膜板(100)与玻璃基板(200)对位贴合时，立柱(130)插入凹槽(220)内；OLED器件(210)上形成保护膜(400)时，立柱(130)用以对保护膜(400)进行阻挡。该OLED保护膜的封装结构及其封装方法可以使OLED发光面边缘黑框变窄，有利于推动窄边框显示技术的发展。

Description

OLED保护膜的封装结构及其封装方法
【技术领域】
本发明涉及OLED封装的技术领域，具体是涉及一种OLED保护膜的封装结构及其封装方法。
【背景技术】
OLED（Organic Light-Emitting Diode，有机发光二极管）具有自发光、全固态、宽视角、响应快等诸多优点，并且在平板显示中有着巨大的应用前景，OLED 被认为是继LCD（Liquid Crystal Display，液晶显示器)、PDP（Plasma Display Panel，等离子显示板）之后的新一代平板显示产品和技术。目前OLED 在显示和照明领域都已经有了广泛的应用。
在现有技术中，OLED器件的薄膜封装普遍使用的是一层无机层，一层有机层的叠层结构，其中无机层一般采用PECVD（Plasma Enhanced Chemical Vapor Deposition -- 等离子体增强化学气相沉积法）、ALD（Atomic layer deposition --原子层沉积）、PLD（Plasma layer deposition –等离子层沉积）等技术，在无机层成膜的过程中会使用Mask（掩膜板），如图1所示，图1是现有技术中OLED保护膜形成过程中掩膜板与玻璃基板配合结构的剖视图；受掩膜板1设计影响，掩膜板1覆盖到玻璃基板4上后，会与玻璃基板4间形成间隙（GAP）3。
请一并参阅图2，图2是现有技术中OLED保护膜形成后的局部结构示意图；当使用PECVD等方法对OLED器件2形成保护膜5时，保护膜5就会向间隙 3延伸，进而会影响到对整个OLED板的切割位置以及会使OLED发光面边缘黑框加宽，对窄边框显示设计不利。注：图1中标注10为掩膜板的镂空区。
【发明内容】
本发明实施例提供一种OLED保护膜的封装结构及其封装方法，以解决现有技术中在对OLED形成保护膜时，保护膜会向玻璃基板与掩膜板之间的间隙 延伸的技术问题。
为解决上述问题，本发明实施例提供了一种OLED保护膜的封装结构，所述封装结构包括掩膜板以及设有OLED器件的玻璃基板；所述掩膜板上设有与所述OLED器件尺寸相对应的镂空区，所述掩膜板上的非镂空区与所述玻璃基板之间形成有空隙，所述玻璃基板在对应所述空隙的位置处设有凹槽，所述掩膜板在相对所述玻璃基板的一侧设有立柱，所述掩膜板与所述玻璃基板对位贴合时，所述立柱插入所述凹槽内；OLED器件上形成保护膜时，所述立柱用以对所述保护膜进行阻挡。
根据本发明一优选实施例，所述掩膜板上的立柱通过在所述掩膜板沉积无机材料层，然后经过曝光、显影、刻蚀工艺形成。
根据本发明一优选实施例，所述掩膜板上的立柱的截面为梯形；所述玻璃基板上的凹槽形状与所述立柱形状相适应。
根据本发明一优选实施例，所述玻璃基板上的凹槽沿所述OLED器件的环周设置，所述凹槽的深度为10um~20um。
根据本发明一优选实施例，所述立柱的高度小于所述OLED器件的厚度与所述玻璃基板上凹槽的深度之和，以使所述立柱插入所述凹槽配合时，所述掩膜板贴紧所述OLED器件。
为解决上述技术问题，本发明还提供一种OLED保护膜的封装方法，所述封装方法包括步骤：
在设有OLED器件的玻璃基板上形成凹槽；
在设有镂空区的掩膜板上形成立柱结构，所述镂空区的尺寸与所述OLED器件的尺寸相对应；
将所述设有凹槽的玻璃基板与所述设有立柱结构的掩膜板贴紧配合，所述立柱插入所述凹槽内，所述掩膜板贴紧所述OLED器件，所述掩膜板上的非镂空区与所述玻璃基板之间形成有空隙；
通过所述镂空区在OLED器件上形成保护膜；
其中，所述立柱用以对所述保护膜进行阻挡。
根据本发明一优选实施例，所述掩膜板上的立柱通过在所述掩膜板沉积无机材料层，然后经过曝光、显影、刻蚀工艺形成。
根据本发明一优选实施例，所述掩膜板上的立柱的截面为梯形；所述玻璃基板上的凹槽形状与所述立柱形状相适应。
根据本发明一优选实施例，所述玻璃基板上的凹槽沿所述OLED器件的环周设置，所述凹槽的深度为10um~20um。
根据本发明一优选实施例，所述立柱的高度小于所述OLED器件的厚度与所述玻璃基板上凹槽的深度之和，以使所述立柱插入所述凹槽配合时，所述掩膜板贴紧所述OLED器件。
相对于现有技术，本发明提供的OLED保护膜的封装结构及其封装方法，通过在玻璃基板和掩膜板上形成相互配合的凹槽以及立柱结构，立柱可以在OLED形成保护膜时，阻挡保护膜向玻璃基板和掩膜板之间延伸，该OLED保护膜的封装结构可以使OLED发光面边缘黑框变窄，有利于推动窄边框显示技术的发展。
【附图说明】
为了更清楚地说明本发明实施例中的技术方案，下面将对实施例描述中所需要使用的附图作简单地介绍，显而易见地，下面描述中的附图仅仅是本发明的一些实施例，对于本领域普通技术人员来讲，在不付出创造性劳动的前提下，还可以根据这些附图获得其他的附图。
图1是现有技术中OLED保护膜形成过程中掩膜板与玻璃基板配合结构的剖视图；
图2是现有技术中OLED保护膜形成后的局部结构示意图；
图3是本发明OLED保护膜封装结构一优选实施例中掩膜板与玻璃基板分开状态的结构示意图；
图4是图3实施例中掩膜板与玻璃基板贴紧配合状态的结构示意图；
图5是OLED保护膜的封装结构形成保护膜的结构示意图；以及
图6是本发明OLED保护膜的封装方法一优选实施例的流程示意图。
【具体实施方式】
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅是本发明的一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其它实施例，都属于本发明保护的范围。
请一并参阅图3和图4，图3是本发明OLED保护膜封装结构一优选实施例中掩膜板与玻璃基板分开状态的结构示意图，图4是图3实施例中掩膜板与玻璃基板贴紧配合状态的结构示意图。该封装结构包括掩膜板100以及玻璃基板200。
具体而言，该玻璃基板200上设有OLED器件210，掩膜板100上设有与OLED器件210尺寸相对应的镂空区110，掩膜板100上的非镂空区120与玻璃基板200之间形成有空隙300，玻璃基板200在对应空隙300的位置处设有凹槽220，掩膜板100在相对玻璃基板200的一侧设有立柱130，掩膜板100与玻璃基板200对位贴合时，立柱130插入凹槽220内。
请进一步参阅图5，图5是OLED保护膜的封装结构形成保护膜的结构示意图。OLED器件210上形成保护膜400时，掩膜板100上的立柱130用以对保护膜400进行阻挡，进而限制保护膜400向空隙300内过度延伸，保护膜400只能够延伸到立柱130位置处（图中立柱130的右侧），这样的话，很大程度上限制了保护膜400的延伸长度及延伸位置。
优选地，该掩膜板100上的立柱130是通过在掩膜板100沉积无机材料层，然后经过曝光、显影、刻蚀工艺形成。关于形成立柱130结构过程中的曝光、显影、刻蚀等工艺在本领域技术人员的理解范围内，此处不再详述。其中，无机材料可以为SiN、或者SiO、SiON等。此处亦不再一一列举。
在本实施例中，掩膜板100上的立柱130的截面为梯形；玻璃基板200上的凹槽220形状与立柱130形状相适应。当然在其他实施例中，掩膜板100上立柱130的截面形状也可以为其他形状。
进一步优选地，玻璃基板200上的凹槽220可以沿OLED器件210的环周设置，凹槽的深度为10um~20um。玻璃基板上确定OLED器件210的位置大小等信息后，利用蚀刻技术在各OLED器件210四周的玻璃基板上面制作深度为10um~20um的倒梯形凹槽220。
进一步地，为了使立柱130插入凹槽220配合时，掩膜板100贴紧OLED器件210，设计为立柱130的高度H小于OLED器件210的厚度T与玻璃基板200上凹槽220的深度D之和。
在本实施例中可以采用PECVD（Plasma Enhanced Chemical Vapor Deposition -- 等离子体增强化学气相沉积法）技术形成保护膜400，该保护膜400优先采用无机材料组成，譬如SiN、或者SiO、SiON等。
PECVD是借助微波或射频等使含有薄膜组成原子的气体电离，在局部形成等离子体，而等离子体化学活性很强，很容易发生反应，在基片上沉积出所期望的薄膜。为了使化学反应能在较低的温度下进行，利用了等离子体的活性来促进反应，因而这种CVD称为等离子体增强化学气相沉积(PECVD)。PECVD具有的优点为：基本温度低；沉积速率快；成膜质量好，针孔较少，不易龟裂等。
相对于现有技术，本发明提供的OLED保护膜的封装结构，通过在玻璃基板和掩膜板上形成相互配合的凹槽以及立柱结构，立柱可以在OLED形成保护膜时，阻挡保护膜向玻璃基板和掩膜板之间延伸，该OLED保护膜的封装结构可以使OLED发光面边缘黑框变窄，有利于推动窄边框显示技术的发展。
进一步地，本发明实施例还提供OLED保护膜的封装方法，请参阅图6，图6是本发明OLED保护膜的封装方法一优选实施例的流程示意图，该封装方法包括但不限以下步骤。
步骤S610，在设有OLED器件的玻璃基板上形成凹槽。
在步骤步骤S610中，玻璃基板上的凹槽可以沿OLED器件的环周设置，凹槽的深度为优选为10um~20um。玻璃基板上确定OLED器件的位置大小等信息后，利用蚀刻技术在各OLED器件四周的玻璃基板上面制作深度为10um~20um的倒梯形凹槽。
步骤S620，在设有镂空区的掩膜板上形成立柱结构。
在该步骤中，镂空区的尺寸与OLED器件的尺寸相对应。掩膜板上的立柱的截面为梯形；玻璃基板上的凹槽形状与立柱形状相适应，也为梯形。当然在其他实施例中，掩膜板上立柱的截面形状也可以为其他形状，只要其与凹槽形状相适应配合即可。
该掩膜板上的立柱是通过在掩膜板沉积无机材料层，然后经过曝光、显影、刻蚀工艺形成。关于形成立柱结构过程中的曝光、显影、刻蚀等工艺在本领域技术人员的理解范围内，此处不再详述。其中，无机材料可以为SiN、或者SiO、SiON等。此处亦不再一一列举。
需要说明的是，本实施例中步骤S610与步骤S620的顺序可以对调，即在玻璃基板上形成凹槽与在掩膜板上形成立柱结构的步骤不分先后，哪一步骤在先均可。
步骤S630，将设有凹槽的玻璃基板与设有立柱结构的掩膜板贴紧配合；此时，立柱插入凹槽内，掩膜板贴紧OLED器件，掩膜板上的非镂空区与玻璃基板之间形成有空隙。
进一步地，为了使立柱插入凹槽配合时，掩膜板贴紧OLED器件，设计为立柱的高度H小于OLED器件的厚度T与玻璃基板上凹槽的深度D之和。详见图3。
步骤S640，通过镂空区在OLED器件上形成保护膜。
在步骤S640中，立柱用以对保护膜进行阻挡。具体请参阅图5，图5是OLED保护膜的封装结构在形成保护膜的结构示意图。OLED器件上形成保护膜时，立柱限制了保护膜向空隙内过度延伸，保护膜只能够延伸到立柱位置处（图中立柱的右侧），这样的话，很大程度上限制了保护膜的延伸长度及延伸位置。
在该步骤中可以采用PECVD（Plasma Enhanced Chemical Vapor Deposition -- 等离子体增强化学气相沉积法）技术形成保护膜，该保护膜优先采用无机材料组成，譬如SiN、或者SiO、SiON等。
PECVD是借助微波或射频等使含有薄膜组成原子的气体电离，在局部形成等离子体，而等离子体化学活性很强，很容易发生反应，在基片上沉积出所期望的薄膜。为了使化学反应能在较低的温度下进行，利用了等离子体的活性来促进反应，因而这种CVD称为等离子体增强化学气相沉积(PECVD)。PECVD具有的优点为：基本温度低；沉积速率快；成膜质量好，针孔较少，不易龟裂等。
相对于现有技术，本发明提供的OLED保护膜的封装方法，通过在玻璃基板和掩膜板上形成相互配合的凹槽以及立柱结构，立柱可以在OLED形成保护膜时，阻挡保护膜向玻璃基板和掩膜板之间延伸，该OLED保护膜的封装结构可以使OLED发光面边缘黑框变窄，有利于推动窄边框显示技术的发展。
以上所述仅为本发明的部分实施例，并非因此限制本发明的保护范围，凡是利用本发明说明书及附图内容所作的等效装置或等效流程变换，或直接或间接运用在其他相关的技术领域，均同理包括在本发明的专利保护范围内。

Claims (19)

  1. 一种OLED保护膜的封装结构，其特征在于，所述封装结构包括掩膜板以及设有OLED器件的玻璃基板；所述掩膜板上设有与所述OLED器件尺寸相对应的镂空区，所述掩膜板上的非镂空区与所述玻璃基板之间形成有空隙，所述玻璃基板在对应所述空隙的位置处设有凹槽，所述掩膜板在相对所述玻璃基板的一侧设有立柱，所述掩膜板与所述玻璃基板对位贴合时，所述立柱插入所述凹槽内；OLED器件上形成保护膜时，所述立柱用以对所述保护膜进行阻挡；其中，所述掩膜板上的立柱通过在所述掩膜板沉积无机材料层，然后经过曝光、显影、刻蚀工艺形成，所述掩膜板上的立柱的截面为梯形；所述玻璃基板上的凹槽形状与所述立柱形状相适应。
  2. 一种OLED保护膜的封装结构，其特征在于，所述封装结构包括掩膜板以及设有OLED器件的玻璃基板；所述掩膜板上设有与所述OLED器件尺寸相对应的镂空区，所述掩膜板上的非镂空区与所述玻璃基板之间形成有空隙，所述玻璃基板在对应所述空隙的位置处设有凹槽，所述掩膜板在相对所述玻璃基板的一侧设有立柱，所述掩膜板与所述玻璃基板对位贴合时，所述立柱插入所述凹槽内；OLED器件上形成保护膜时，所述立柱用以对所述保护膜进行阻挡。
  3. 根据权利要求2所述的封装结构，其特征在于，所述掩膜板上的立柱通过在所述掩膜板沉积材料层，然后经过曝光、显影、刻蚀工艺形成。
  4. 根据权利要求3所述的封装结构，其特征在于，所述立柱采用无机材料制成。
  5. 根据权利要求2所述的封装结构，其特征在于，所述掩膜板上的立柱的截面为梯形。
  6. 根据权利要求5所述的封装结构，其特征在于，所述玻璃基板上的凹槽形状与所述立柱形状相适应。
  7. 根据权利要求4所述的封装结构，其特征在于，所述玻璃基板上的凹槽沿所述OLED器件的环周设置。
  8. 根据权利要求7所述的封装结构，其特征在于，所述凹槽的深度为10um~20um。
  9. 根据权利要求4所述的封装结构，其特征在于，所述立柱的高度小于所述OLED器件的厚度与所述玻璃基板上凹槽的深度之和，以使所述立柱插入所述凹槽配合时，所述掩膜板贴紧所述OLED器件。
  10. 根据权利要求4所述的封装结构，其特征在于，所述无机材料包括SiN、SiO、SiON。
  11. 一种OLED保护膜的封装方法，其特征在于，所述封装方法包括步骤：
    在设有OLED器件的玻璃基板上形成凹槽；
    在设有镂空区的掩膜板上形成立柱结构，所述镂空区的尺寸与所述OLED器件的尺寸相对应；
    将所述设有凹槽的玻璃基板与所述设有立柱结构的掩膜板贴紧配合，所述立柱插入所述凹槽内，所述掩膜板贴紧所述OLED器件，所述掩膜板上的非镂空区与所述玻璃基板之间形成有空隙；
    通过所述镂空区在OLED器件上形成保护膜；
    其中，所述立柱用以对所述保护膜进行阻挡。
  12. 根据权利要求11所述的封装方法，其特征在于，所述掩膜板上的立柱通过在所述掩膜板沉积材料层，然后经过曝光、显影、刻蚀工艺形成。
  13. 根据权利要求12所述的封装方法，其特征在于，所述立柱采用无机材料制成。
  14. 根据权利要求11所述的封装方法，其特征在于，所述掩膜板上的立柱的截面为梯形。
  15. 根据权利要求14所述的封装方法，其特征在于，所述玻璃基板上的凹槽形状与所述立柱形状相适应。
  16. 根据权利要求13所述的封装方法，其特征在于，所述玻璃基板上的凹槽沿所述OLED器件的环周设置。
  17. 根据权利要求16所述的封装方法，其特征在于，所述凹槽的深度为10um~20um。
  18. 根据权利要求13所述的封装方法，其特征在于，所述立柱的高度小于所述OLED器件的厚度与所述玻璃基板上凹槽的深度之和，以使所述立柱插入所述凹槽配合时，所述掩膜板贴紧所述OLED器件。
  19. 根据权利要求13所述的封装方法，其特征在于，所述无机材料包括SiN、SiO、SiON。
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Publication number Priority date Publication date Assignee Title
CN107819082B (zh) * 2017-11-13 2024-05-28 深圳市中教光电有限公司 一种oled封装结构及封装方法
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CN111621743A (zh) * 2020-06-10 2020-09-04 京东方科技集团股份有限公司 掩膜板
CN121428510A (zh) * 2025-12-29 2026-01-30 江苏博涛智能热工股份有限公司 Pecvd设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060087226A1 (en) * 2004-10-26 2006-04-27 Tsutomu Miura Organic LED vapor deposition mask
US20100311248A1 (en) * 2007-06-14 2010-12-09 X-Fab Semiconductor Foundries Ag Structured layer deposition on processed wafers used in microsystem technology
CN102903728A (zh) * 2011-07-29 2013-01-30 三星显示有限公司 有机发光二极管显示器及其制造方法
CN105714249A (zh) * 2016-04-19 2016-06-29 上海和辉光电有限公司 掩膜板、蒸镀装置及蒸镀方法
CN105957830A (zh) * 2016-06-14 2016-09-21 武汉华星光电技术有限公司 Oled显示面板的封装方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3887421A (en) * 1973-01-22 1975-06-03 Gen Motors Corp Method of masking semiconductor wafers using a self-aligning mask
US7880382B2 (en) * 2006-03-08 2011-02-01 Toppan Printing Co., Ltd. Organic electroluminescence panel and manufacturing method of the same
US9136259B2 (en) * 2008-04-11 2015-09-15 Micron Technology, Inc. Method of creating alignment/centering guides for small diameter, high density through-wafer via die stacking
KR102124040B1 (ko) * 2013-02-01 2020-06-29 삼성디스플레이 주식회사 박막 증착용 마스크, 이의 제조 방법, 및 이를 이용한 유기 발광 표시 장치의 제조 방법
CN105154823B (zh) * 2015-09-07 2017-12-08 信利（惠州）智能显示有限公司 蒸镀掩膜板及其制作方法
CN105609532B (zh) * 2015-12-21 2019-11-22 上海天马有机发光显示技术有限公司 阵列基板及其制作方法、显示面板

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20060087226A1 (en) * 2004-10-26 2006-04-27 Tsutomu Miura Organic LED vapor deposition mask
US20100311248A1 (en) * 2007-06-14 2010-12-09 X-Fab Semiconductor Foundries Ag Structured layer deposition on processed wafers used in microsystem technology
CN102903728A (zh) * 2011-07-29 2013-01-30 三星显示有限公司 有机发光二极管显示器及其制造方法
CN105714249A (zh) * 2016-04-19 2016-06-29 上海和辉光电有限公司 掩膜板、蒸镀装置及蒸镀方法
CN105957830A (zh) * 2016-06-14 2016-09-21 武汉华星光电技术有限公司 Oled显示面板的封装方法

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