WO2018101386A1 - Réseau d'oscillateurs haute fréquence à modulation de phase - Google Patents

Réseau d'oscillateurs haute fréquence à modulation de phase Download PDF

Info

Publication number
WO2018101386A1
WO2018101386A1 PCT/JP2017/042972 JP2017042972W WO2018101386A1 WO 2018101386 A1 WO2018101386 A1 WO 2018101386A1 JP 2017042972 W JP2017042972 W JP 2017042972W WO 2018101386 A1 WO2018101386 A1 WO 2018101386A1
Authority
WO
WIPO (PCT)
Prior art keywords
frequency
output
reference signal
phase
frequency oscillator
Prior art date
Application number
PCT/JP2017/042972
Other languages
English (en)
Japanese (ja)
Inventor
澄人 常木
章雄 福島
慎吾 田丸
久保田　均
広太朗 水沼
欣 河野
磯部　良彦
和也 鈴木
成美 水上
Original Assignee
国立研究開発法人産業技術総合研究所
株式会社デンソー
国立大学法人東北大学
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 国立研究開発法人産業技術総合研究所, 株式会社デンソー, 国立大学法人東北大学 filed Critical 国立研究開発法人産業技術総合研究所
Priority to JP2018554231A priority Critical patent/JP6784377B2/ja
Publication of WO2018101386A1 publication Critical patent/WO2018101386A1/fr

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/82—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of the magnetic field applied to the device
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B15/00—Generation of oscillations using galvano-magnetic devices, e.g. Hall-effect devices, or using superconductivity effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03B—GENERATION OF OSCILLATIONS, DIRECTLY OR BY FREQUENCY-CHANGING, BY CIRCUITS EMPLOYING ACTIVE ELEMENTS WHICH OPERATE IN A NON-SWITCHING MANNER; GENERATION OF NOISE BY SUCH CIRCUITS
    • H03B19/00—Generation of oscillations by non-regenerative frequency multiplication or division of a signal from a separate source

Definitions

  • the present invention relates to a phase modulation high frequency oscillator array.
  • Communication technology that uses high-frequency signals (about 100 MHz to 300 GHz) including microwave bands (about 1 GHz to 300 GHz) has become increasingly important in recent years, and the technology is widely used in mobile phones, wireless communications, satellite broadcasting, radar, etc. ing. In particular, radar is increasingly used to control the directivity of high-frequency signals.
  • a phase modulation high frequency oscillator array that controls the directivity of a high frequency signal using a plurality of oscillators has been studied.
  • the reference signal output from the reference signal source is used to synchronize the reference signal source and each oscillator while transmitting the output signal from each oscillator.
  • phase shifter for example, a phase shifter using a delay line and a phase shifter using an electronic circuit are known.
  • an oscillator a voltage controlled oscillator is known.
  • phase shifter using the delay line has the disadvantage that the circuit becomes redundant and the phase difference is fixed and cannot be changed arbitrarily.
  • a phase shifter using an electronic circuit has a drawback that a frequency band capable of forming a phase difference is generally narrow and signal loss is large.
  • a voltage controlled oscillator is used as the oscillator, there is a drawback that it is difficult to reduce the size in a frequency band of several GHz or more.
  • an object of the present invention is to propose a phase-modulated high-frequency oscillator array that can eliminate the above-described drawbacks and can arbitrarily change the phase difference between a plurality of output signals.
  • a phase modulation high frequency oscillator array is a phase modulation high frequency oscillator array that synchronizes and oscillates at a frequency f, and (i) when n is an integer of 2 or more, the frequency a reference signal source that outputs a reference signal having a frequency n times or 1 / n times f; and (ii) a plurality of magnetoresistive elements, wherein the reference signal is injected into each of the plurality of magnetoresistive elements.
  • a plurality of biases for applying a bias voltage to each of the plurality of magnetoresistive elements, and the frequency of the output signal from each of the plurality of magnetoresistive elements matches the frequency f.
  • a voltage application mechanism wherein at least two magnetoresistive elements are changed by changing a bias voltage applied to at least two magnetoresistive elements arbitrarily selected from the plurality of magnetoresistive elements.
  • a plurality of bias voltage applying mechanisms for changing the phase difference between the output signals; and (iv) a plurality of removing means for removing a reference signal mixed in a signal path for transmitting the output signals from the plurality of magnetoresistive elements. And comprising.
  • phase modulation high frequency oscillator array in connection with embodiment of this invention. It is explanatory drawing which shows the structure of the magnetoresistive element concerning embodiment of this invention. It is a block diagram which shows schematic structure of the phase modulation high frequency oscillator array in connection with embodiment of this invention. It is a block diagram which shows schematic structure of the phase modulation high frequency oscillator array in connection with embodiment of this invention. It is a block diagram which shows schematic structure of the phase modulation high frequency oscillator array in connection with embodiment of this invention. It is a block diagram which shows schematic structure of the phase modulation high frequency oscillator array in connection with embodiment of this invention. It is a block diagram which shows schematic structure of the phase modulation high frequency oscillator array in connection with embodiment of this invention.
  • FIG. 6 is a graph showing the measurement result of the spectral intensity of the magnetoresistive element when the bias voltage applied to the magnetoresistive element according to the example of the present invention is changed in the range of 235 to 255 mV.
  • 3 is a graph showing measurement results of spectral intensity of a magnetoresistive element when a bias voltage applied to the magnetoresistive element according to an example of the present invention is changed in a range of 200 to 220 mV.
  • 6 is a graph showing an oscillation frequency of a magnetoresistive element when a bias voltage applied to the magnetoresistive element according to an example of the present invention is changed in a range of 235 to 255 mV. 6 is a graph showing an oscillation frequency of a magnetoresistive element when a bias voltage applied to the magnetoresistive element according to an example of the present invention is changed in a range of 200 to 220 mV. It is a graph which shows the relationship between the oscillation frequency when the magnetoresistive element concerning the Example of this invention is injection-locked, and a measurement output. It is a graph which shows the relationship between the oscillation frequency when the magnetoresistive element concerning the Example of this invention is injection-locked, and a measurement output.
  • a magnetoresistive element (hereinafter referred to as “MR element”) functions as a high-frequency oscillation element.
  • MR element magnetoresistive element
  • an MR element that functions as a small high-frequency oscillation element for example, a diameter of about 30 nm to 300 nm and a height of about 30 nm to 100 nm
  • the MR element includes a magnetization free layer (hereinafter simply referred to as “free layer”), a nonmagnetic layer, and a magnetization fixed layer (hereinafter simply referred to as “fixed layer”).
  • free layer magnetization free layer
  • fixed layer magnetization fixed layer
  • a direct current is passed from the free layer to the fixed layer or from the fixed layer to the free layer
  • the electron spin of the free layer is excited by the spin torque of the direct current, and the magnetization between the free layer and the fixed layer changes.
  • the relative angle vibrates over time. This vibration is converted into a high-frequency electric signal through the tunnel magnetoresistance effect or the giant magnetoresistance effect, and as a result, a high-frequency signal is oscillated from the MR element.
  • the pre-synchronization oscillation frequency f MR of the high-frequency signal oscillated from the MR element depends on the resonance condition of the MR element (for example, a direct current (or DC voltage) applied to the MR element, a magnetic field, or a temperature), By changing the resonance condition of the MR element, the pre-synchronization oscillation frequency f MR can be changed.
  • the resonance condition of the MR element for example, a direct current (or DC voltage) applied to the MR element, a magnetic field, or a temperature
  • Injection locking refers to the difference between the frequency f REF of the reference signal injected (supplied) from the reference signal source to the MR element and the pre-locking oscillation frequency f MR of the MR element with a certain bandwidth W (hereinafter “ This is a phenomenon in which the pre-synchronization oscillation frequency f MR of the MR element coincides with the frequency f REF of the reference signal when it is smaller than the “synchronizable bandwidth”, that is, when the relationship of Expression (1) is satisfied. (
  • the pre-synchronization oscillation frequency f MR of the MR element not only matches the frequency f REF of the reference signal, but also accurately follows and synchronizes with the frequency f REF of the reference signal. For this reason, by using injection locking, the peak width of the high-frequency signal oscillated from the MR element can be narrowed, and the pre-synchronization oscillation frequency f MR can be stabilized. If injection locking is used, not only can the oscillation frequency f MR of the MR element be synchronized but also the phase difference ⁇ , which is the above-mentioned problem, can be arbitrarily controlled.
  • arcsin is an inverse sine function.
  • f MR is fixed while being coincident with f REF .
  • the oscillation frequency of the MR element after injection locking is assumed to change due to a change in resonance conditions (for example, a direct current (or DC voltage) applied to the MR element, a magnetic field, or a temperature).
  • the oscillation frequency f MR of the MR element is substituted into the equation (2), the phase difference ⁇ between the high frequency signal oscillated from the MR element after injection locking and the reference signal can be obtained from the equation (2).
  • f MR in the equation (2) originally means the oscillation frequency before synchronization of the MR element, but the oscillation frequency of the MR element after injection locking changes depending on the change of the resonance condition. It may be interpreted that it also means the oscillation frequency of the MR element assumed when assumed. For this reason, by changing the resonance condition of the MR element after injection locking, the oscillation frequency of the MR element after injection locking is matched with the frequency f REF of the reference signal from the MR element after injection locking. The phase difference ⁇ between the oscillated high frequency signal and the reference signal can be arbitrarily changed.
  • one of the two MR elements is called a first MR element, and the other is called a second MR element.
  • the pre-synchronization oscillation frequency f MR1 of the first MR element is different from the pre-synchronization oscillation frequency f MR2 of the second MR element with respect to the frequency f REF of the reference signal, oscillation is performed from each of the two MR elements.
  • the phase difference ⁇ MR of the high-frequency signal satisfies the relationships of equations (3) to (5).
  • W MR1 and W MR2 are bandwidths with which the first MR element and the second MR element can be synchronized, respectively.
  • the equations (3) to (5) are expressed by the high-frequency signal oscillated from each of the two MR elements through the signal path. It should be noted that the phase difference is not necessarily the same.
  • the present inventors diligently examined the conditions for causing injection locking.
  • the frequency f REF of the reference signal is equal to f
  • the oscillation frequency of the MR element Rather than injection locking only when f MR is equal to f
  • the frequency f REF of the reference signal is equal to n times or 1 / n times f or approximately equal to n times or 1 / n times f. It turns out that sometimes happens.
  • n is an integer of 2 or more. “Approximately equal” means that synchronization is possible if the difference between f REF and n times or 1 / n times f is within 40%, preferably within 30% of f. For this reason, in the present specification, “almost equal frequency” that is n times or 1 / n times f is referred to as “synchronizable frequency”.
  • the present inventor pays attention to such technical knowledge and uses a reference signal having a frequency n times or 1 / n times f when f is an oscillation frequency of a plurality of MR elements after synchronization.
  • the phase-modulated high-frequency oscillator array that injects and locks the MR elements was invented. Due to injection locking, the oscillation frequencies of the plurality of MR elements coincide with f.
  • the oscillation frequency of the high-frequency signal oscillated from each of the plurality of MR elements is kept matched with f.
  • the phase difference between the high-frequency signals output from the selected at least two MR elements can be arbitrarily controlled.
  • phase modulation can be performed by controlling the phase difference between the high-frequency signals.
  • the phase modulation high frequency oscillator array can be applied as, for example, a phased array radar.
  • a bias voltage applying mechanism for changing a bias voltage which is a DC voltage applied to the MR element, or a magnetic field applying mechanism for changing the magnetic field strength applied to the MR element is suitable. It is.
  • the phase difference between the high-frequency signals can be changed while keeping the oscillation frequency of the high-frequency signal oscillated from each of the plurality of MR elements at f. It can be controlled arbitrarily.
  • the reference signal is mixed in a signal path for transmitting a high-frequency signal oscillated from each of the plurality of MR elements. If the oscillation frequency f of the plurality of MR elements after synchronization and the frequency f REF of the reference signal are equal, the phase-modulated high-frequency signal from the MR element and the reference signal are distinguished and output from the phase-modulated high-frequency oscillator array. It becomes difficult to do.
  • the frequency f REF of the reference signal is n times or 1 / n times the oscillation frequency f of the plurality of MR elements after synchronization
  • the removing means for selectively removing the reference signal is used to remove the reference signal from the MR element.
  • the phase-modulated high-frequency signal can be output from the phase-modulated high-frequency oscillator array.
  • a removing means for example, a filter having a frequency characteristic in which the frequency f REF of the reference signal is set as an attenuation band (or a stop band) and the oscillation frequency f of the MR element is set as a pass band can be used.
  • a low-pass filter can be used as the removing means.
  • a high-pass filter can be used as the removing means.
  • the removing means is not limited to the above-described filter, and has, for example, a frequency characteristic in which the frequency f REF of the reference signal is an attenuation region (or a stop region), and a high frequency signal oscillated from the MR element is used as a radio wave.
  • An output antenna may be used.
  • the injection locking is performed by multiplying f by n times or 1 / n times, such as when the frequency f REF of the reference signal is 2/3 times the oscillation frequency f of the MR element after synchronization. It has been confirmed that it occurs at frequencies other than frequencies. However, a half-frequency such as 2/3 times f is 1 ⁇ 2 times f and the energy required for injection locking is high because the locking width is narrow. Therefore, a lot of power from the reference signal source must be injected into the MR element, which is not practical.
  • FIG. 1 is a block diagram showing a schematic configuration of a phase modulation high frequency oscillator array 10 according to an embodiment of the present invention.
  • the phase modulation high-frequency oscillator array 10 includes a reference signal source 20, N high-frequency oscillators 30-1, 30-2,..., 30-N and N removal means 40-1, 40-2,. -N.
  • N is an integer of 2 or more.
  • Each of the N high-frequency oscillators 30-1, 30-2,..., 30-N includes an MR element 31 and a bias voltage applying mechanism 32.
  • the phase modulation high-frequency oscillator array 10 is configured to synchronize with the oscillation frequency f, and the reference signal source 20 outputs a reference signal having a frequency n times or 1 / n times the oscillation frequency f.
  • n is an integer of 2 or more, and is preferably an integer of 2 to 12, for example.
  • the reference signal source 20 for example, a voltage controlled oscillator, a phase locked loop oscillator, or the like can be used.
  • the reference signal source 20 is composed of a combination of a primitive signal source that outputs a signal having an oscillation frequency f and a multiplier that multiplies the oscillation frequency f of the signal output from the atomic signal source by n times or 1 / n times. May be.
  • the reference signal source 20 supplies a reference signal to each of the N high-frequency oscillators 30-1, 30-2, ..., 30-N.
  • Each of the high-frequency oscillators 30-1, 30-2,..., 30-N injects a reference signal supplied from the reference signal source 20 into the MR element 31, so that N high-frequency oscillators 30-1, 30- The oscillation frequency of the high frequency signal oscillated from each of the MR elements 31 of 2,.
  • one reference signal source 20 is shared by N high frequency oscillators 30-1, 30-2,..., 30-N, but N high frequency oscillators 30-1, 30-2, ..., 30-N may be provided with a dedicated reference signal source.
  • the MR element 31 includes a free layer 31A, a nonmagnetic layer 31B, and a fixed layer 31C.
  • the MR element 31 functions as a high-frequency oscillation element that resonates at the oscillation frequency f MR and outputs a high-frequency signal.
  • the MR element 31 oscillates not only the fundamental wave component of the high frequency signal but also its harmonic component. Therefore, the fundamental component of the high frequency signal oscillated from the MR element 31 may be handled as an output signal output from the MR element 31, or the harmonic component of the high frequency signal oscillated from the MR element 31 may be treated as the MR element. You may handle as an output signal output from 31.
  • the harmonic component of the high frequency signal oscillated from the MR element 31 is handled as an output signal output from the MR element 31, the fundamental component of the high frequency signal oscillated from the MR element 31 is removed by a filter. May be.
  • the MR element 31 is classified into a horizontal type, a vertical type, and a magnetic vortex type according to the direction of magnetization, and any of them can be used.
  • the material of the free layer 31A is a ferromagnetic material.
  • Typical examples of the ferromagnetic material include iron-based or iron-based alloys (for example, CoFeB) such as Fe, Co, and Ni.
  • CoFeB iron-based or iron-based alloys
  • the crystal structure of the free layer 31A is preferably a BCC structure, for example.
  • the material of the nonmagnetic layer 31B is classified into a nonmagnetic metal and an insulator.
  • a material using a nonmagnetic metal as the material of the nonmagnetic layer 31B is called a GMR element, and a material using an insulator is called a TMR element.
  • the nonmagnetic metal that functions as the nonmagnetic layer 31B for example, Cu, Ag, Cr, or the like can be used.
  • the thickness of the nonmagnetic metal is, for example, about 0.3 nm to 10 nm. In particular, when Cu or Ag that realizes a large MR ratio is used, the thickness is, for example, 2 nm to 10 nm.
  • the insulator functioning as the nonmagnetic layer 31B for example, various dielectrics such as oxides, nitrides, halides such as Mg, Al, Si, Ca, and Li can be used. In particular, magnesium oxide having both a large MR ratio and a small sheet resistance is preferable.
  • oxide or nitride used as the nonmagnetic layer 31B, some oxygen or nitrogen deficiency may exist in the oxide or nitride.
  • the thickness of the insulator is, for example, about 0.3 nm to 2 nm. In the case of a TMR element, the nonmagnetic layer 31B is also called a tunnel barrier layer.
  • the material of the fixed layer 31C is a ferromagnetic material.
  • Typical examples of the ferromagnetic material include iron-based or iron-based alloys such as Fe, Co, and Ni (for example, FeB and CoFeB).
  • alloys CoFeBSi, CoFeBTi, CoFeBCr, CoFeBV, etc. to which B, Si, Ti, Cr, V, etc. are added can be used.
  • alloys such as CoPt, CoPd, FePt, and FePd, multilayer films of these alloy thin films, or alloys obtained by adding B, Cr, or the like to these alloys can be used.
  • the crystal structure of the fixed layer 31C is preferably a BCC structure, for example.
  • heat treatment annealing
  • the film thickness of the fixed layer 31C when the film thickness is reduced, there are problems that the stability of the magnetization direction with respect to current and heat is lowered, and that it is difficult to form a continuous film.
  • the film thickness of the fixed layer 31C is increased, there arises a problem that a leakage magnetic field from the fixed layer 31C to the free layer 31A is increased, and a problem that microfabrication becomes difficult.
  • the film thickness of the fixed layer 31C is preferably about 2 to 30 nm, for example.
  • the free layer 31A, the nonmagnetic layer 31B, and the fixed layer 31C which are the basic components of the MR element 31, have been described, for example, the magnetization direction of the extraction electrode layer and the fixed layer 31C unless the object of the present invention is contrary.
  • a first support layer that assists in maintaining the magnetization a second support layer that assists in adjusting the magnetization easy direction of the free layer 31A, and a third that assists in increasing the read signal when reading the magnetization direction of the free layer 31A.
  • Layers such as a support layer (read-only layer) and a capping layer may be provided.
  • the material of the second support layer is an iron-based or iron-based alloy such as Fe, Co, Ni (for example, FeB). And CoFeB) are typical.
  • the second support layer is made of an alloy such as CoPt, CoPd, FePt, or FePd, or a multilayer film of these alloy thin films, or B, Cr An alloy to which etc. are added can be used.
  • the bias voltage application mechanism 32 applies a bias voltage to the MR element 31.
  • the bias voltage application mechanism 32 changes the bias voltage applied to the MR element 31 in a state where the MR element 31 is injection-locked, thereby changing the phase difference between the output signal output from the MR element 31 and the reference signal. Can be controlled.
  • Such phase modulation can be applied to control of a phase difference between an output signal output from the i-th high-frequency oscillator 30-i and an output signal output from the j-th high-frequency oscillator 30-j, for example. It is. However, i and j are mutually different arbitrary integers of 1 or more and N or less.
  • the bias voltage application mechanism 32 includes a bias voltage source and a signal path for applying the bias voltage.
  • the MR element 31 generally has a resistance of about 10 to 1 k ⁇ , and requires about 100 to 700 mV as a bias voltage for satisfying the resonance condition of the MR element 31. Is preferably a DC power supply with a maximum output of about 1 V and 100 mA.
  • the removing means 40-i selectively removes the reference signal mixed in the signal path for transmitting the output signal output from the high frequency oscillator 30-i.
  • i is an arbitrary integer of 1 or more and N or less.
  • a removing means 40-i for example, a filter having a frequency characteristic in which the frequency f REF of the reference signal is set as an attenuation band (or stop band) and the oscillation frequency f of the MR element 31 after injection locking is set as a pass band. Can be used.
  • a low-pass filter can be used as the removing means 40-i.
  • a high-pass filter can be used as the removing means 40-i.
  • the removing unit 40-i is not limited to the above-described filter, and has, for example, a frequency characteristic in which the band of the reference signal frequency f REF is an attenuation region, and an output signal output from the MR element 31 is a radio wave. May be used as an antenna.
  • a filter for selectively removing the reference signal is not necessary, and the antenna may be connected to the output of the high frequency oscillator 30-i.
  • An amplifier having a frequency characteristic with a low gain at the frequency f REF of the reference signal and a high gain at the oscillation frequency f of the MR element 31 after injection locking may be used as the removing means 40-i.
  • the high frequency oscillator 30-i superimposes a bias voltage, which is a DC signal output from the bias voltage application mechanism 32, on a reference signal, which is an AC signal output from the reference signal source 20. May be provided to the MR element 31.
  • the bias tee 33 includes a capacitor element and an inductor element.
  • a bias voltage supplied from the application mechanism 32 may be directly applied to the MR element 31.
  • 3 shows only the high-frequency oscillator 30-i among the high-frequency vibrators 30-1, 30-2,..., 30-N for convenience. -2, ..., 30-N may all include a bias tee 33.
  • the high-frequency oscillator 30-i may include a magnetic field application mechanism 34 that applies a magnetic field to the MR element 31.
  • the magnetic field application mechanism 34 controls the phase difference between the output signal output from the MR element 31 and the reference signal by changing the magnetic field strength applied to the MR element 31 while the MR element 31 is injection-locked. can do.
  • Such phase modulation can be applied to control of a phase difference between an output signal output from the i-th high-frequency oscillator 30-i and an output signal output from the j-th high-frequency oscillator 30-j, for example. It is. However, i and j are arbitrary different integers of 2 or more and N or less.
  • a permanent magnet or an electromagnet can be used as the magnetic field application mechanism 34.
  • the electromagnet it is easy to change the magnetic field strength.
  • An electromagnet generates a magnetic force by energizing a coil wound around a magnetic body.
  • the magnetic body is not always essential, and a magnetic field generated by energizing the coil is applied to the MR element 31.
  • Also good. 4 shows only the high-frequency oscillator 30-i among the high-frequency vibrators 30-1, 30-2,..., 30-N for the sake of convenience. -2, ..., 30-N may all include the magnetic field application mechanism 34.
  • the phase-modulated high-frequency oscillator array 10 may include an amplifier 50-i that amplifies an output signal output from the high-frequency oscillator 30-i. Since the intensity of the output signal output from the high frequency oscillator 30-i is as low as about 10 mV (rms), for example, it is preferable to amplify the output signal using the amplifier 50-i. Here, rms means the root mean square.
  • FIG. 5 shows only the high-frequency oscillator 30-i among the high-frequency vibrators 30-1, 30-2,..., 30-N for convenience.
  • 50-N includes N amplifiers 50-1, 50-2,..., 50-N that amplify output signals output from the N high-frequency vibrators 30-1, 30-2,. Also good.
  • the bias voltage from the bias voltage application mechanism 32 and the reference signal from the reference signal source 20 are supplied to the MR element 31 through the same signal path, but as shown in FIG.
  • the bias voltage from the bias voltage application mechanism 32 and the reference signal from the reference signal source 20 may be supplied to the MR element 31 through different signal paths.
  • FIG. 7 is a block diagram showing a schematic configuration of the two-output type phase modulation high-frequency oscillator array 10.
  • the phase modulation high-frequency oscillator array 10 includes a reference signal source 20, two high-frequency oscillators 30-1 and 30-2, and two removal means 40-1 and 40-2.
  • Each of the high frequency oscillators 30-1 and 30-2 includes an MR element 31, a bias voltage applying mechanism 32, a bias tee 33, and a magnetic field applying mechanism 34, and an output signal and a high frequency output from the high frequency oscillator 30-1.
  • the phase difference between the output signal output from the oscillator 30-2 can be controlled.
  • the removing means 40-1 and 40-2 selectively remove the reference signals mixed in the signal path for transmitting the output signals output from the high frequency oscillators 30-1 and 30-2, respectively.
  • FIG. 8 is a block diagram showing a specific configuration of the phase modulation high frequency oscillator array 10 according to the present embodiment.
  • the phase modulation high-frequency oscillator array 10 includes a reference signal source 20, two high-frequency oscillators 30-1 and 30-2, a distributor 60, two attenuators 70-1 and 70-2, and two directional couplings.
  • Each of the high frequency oscillators 30-1 and 30-2 includes an MR element 31, a bias voltage application mechanism 32, a bias tee 33, and a magnetic field application mechanism.
  • the amplifiers 50-1 and 50-2 amplify output signals output from the high frequency oscillators 30-1 and 30-2, respectively.
  • Filters 90-1 and 90-2 selectively remove a reference signal mixed in a signal path for transmitting output signals output from high-frequency oscillators 30-1 and 30-2, respectively.
  • the reference signal source 20 an analog signal generator E8257D manufactured by Keysight Technology Inc. having an output power of ⁇ 135 dBm to +21 dBm and a band of 250 kHz to 40 GHz was used.
  • An FeB layer (thickness 2 nm) was used as the free layer 31A constituting the MR element 31.
  • an MgO layer (thickness 1 nm) was used.
  • As the fixed layer 31C constituting the MR element 31 a multilayer film of CoFeB layer (thickness 3 nm) / Ru layer (thickness 0.86 nm) / CoFe layer (thickness 2.5 nm) / PtMn layer (thickness 15 nm) is used. Using. The CoFeB layer of the fixed layer 31C is in contact with the MgO layer that is the nonmagnetic layer 31B.
  • the MR element 31 was processed into a cylinder having a diameter of 300 nm by fine processing.
  • the MR element 31 had a resistance value of 27 ⁇ and a magnetoresistance ratio (MR ratio) of about 100% at room temperature.
  • bias voltage application mechanism 32 a precision source measure unit B2912A manufactured by Keysight Technology Co., Ltd. having a minimum power source resolution of 100 nV was used.
  • bias tee 33 a bias tee 11612A manufactured by Keysight Technology Inc. having an insertion loss of about 0.8 dB and a band of 45 MHz to 26.5 GHz was used.
  • An electromagnet was used as the magnetic field application mechanism 34.
  • the distributor 60 includes three ports 61, 62, and 63.
  • the reference signal input to the distributor 60 from the reference signal source 20 through the port 61 is divided into two equal parts and the ports 62 and 63 are respectively divided. Output.
  • the intensity of the reference signal output from the ports 62 and 63 is the same.
  • a wide-band resistor type distributor ZFRSC-183 + manufactured by Minicircuit Corporation having an insertion loss of about 7 dB and a band of DC 18 GHz was used as the distributor 60.
  • the attenuators 70-1 and 70-2 have ports 71 and 72, respectively.
  • the degree of attenuation of the signal input from the port 71 and output from the port 72 is the same as the degree of attenuation of the signal input from the port 72 and output from the port 71.
  • the output signal from the high frequency oscillator 30-1 is restricted from being input to the amplifier 50-2 and the filter 90-2, and from the high frequency oscillator 30-2.
  • the output signal can be restricted from being input to the amplifier 50-1 and the filter 90-1.
  • a broadband attenuator BW-K20-2W44 ++ manufactured by Minicircuit having an insertion loss of about 20 dB and a band of DC 40 GHz was used.
  • Each of the directional couplers 80-1 and 80-2 includes an input port 81, a coupling port 82, and an output port 83.
  • a signal input from the input port 81 is output from the output port 83 with almost no attenuation, and a signal with a certain ratio (for example, about ⁇ 14 dB) is also output from the coupling port 82.
  • a signal input from the output port 83 is output from the input port 81 with almost no attenuation, and a signal with a certain ratio (for example, about ⁇ 28 dB, that is, almost zero) is also output from the coupling port 82.
  • the output signal from the high frequency oscillator 30-1 is restricted from being input to the amplifier 50-2 and the filter 90-2, and the high frequency oscillator 30-2 is provided. Can be restricted from being input to the amplifier 50-1 and the filter 90-1.
  • a coaxial directional coupler 87301D manufactured by Keysight Technology was used as the directional couplers 80-1 and 80-2. In this embodiment, since the intensity of the reference signal from the reference signal source 20 is about 8 dB larger than the intensity of the output signal from the MR element 31, in order to avoid saturation of the amplifiers 50-1 and 50-2, Directional couplers 80-1 and 80-2 were used to attenuate the intensity of the reference signal from the reference signal source 20.
  • the widths 50-1 and 50-2 are saturated (for example, the maximum allowable value of the input voltage when the output signal of the MR element 31 is saturated with the amplifiers 50-1 and 50-2).
  • the directional couplers 80-1 and 80-2 are not essential, and the directional couplers 80-1 and 80-2 are not necessary. A distributor or a simple electrical contact may be used.
  • the filters 90-1 and 90-2 are virtual devices that have no real device and are artificially inserted into the subsequent stage of the amplifiers 50-1 and 50-2 by signal analysis processing.
  • a Barterworth low-pass filter whose cutoff frequency is set to 8 GHz is used as the filters 90-1 and 90-2.
  • the reference signal input to the port 61 of the distributor 60 was equally divided into signals having a signal strength of 3 dBm and output from the ports 62 and 63.
  • the reference signal output from the port 62 of the distributor 60 includes the attenuator 70-1, the output port 83 of the directional coupler 80-1, the input port 81 of the directional coupler 80-1, and the high frequency oscillator 30-1.
  • the reference signal output from the port 63 of the distributor 60 includes an attenuator 70-2, an output port 83 of the directional coupler 80-2, an input port 81 of the directional coupler 80-2, and a high frequency oscillator.
  • the signal intensity was attenuated to about ⁇ 7 dBm through the bias tee 33 of 30-2, and then injected into the MR element 31 of the high frequency oscillator 30-2.
  • the reference signals passing from the output ports 83 of the directional couplers 80-1 and 80-2 through the coupling port 82 are attenuated to about -35 dBm, and then the amplifiers 50-1, 50- 2 amplified the signal intensity to ⁇ 8 dBm, and the filters 90-1 and 90-2 attenuated the signal intensity to ⁇ 46 dBm (ie, almost zero).
  • the output signal from the MR element 31 of the high-frequency oscillator 30-1 passes through the coupling port 82 from the input port 81 of the directional coupler 80-1, and the signal intensity is attenuated to -43 dBm.
  • the signal intensity was amplified to -16 dBm, and the signal intensity was attenuated to -17 dBm by the low-pass filter 90-1.
  • the output signal from the MR element 31 of the high frequency oscillator 30-2 passes through the coupling port 82 from the input port 81 of the directional coupler 80-2, and the signal intensity is attenuated to -43 dBm.
  • the signal intensity was amplified to -16 dBm, and the signal intensity was attenuated to -17 dBm by the low-pass filter 90-2.
  • the output signal output from the MR element 31 of the high-frequency oscillator 30-2 is input to the input port 81 of the directional coupler 80-2, the output port 83 of the directional coupler 80-2, the attenuator 70-2, and the distribution.
  • the signal strength is finally passed through the amplifier 60, the attenuator 70-1, the output port 83 of the directional coupler 80-1, the coupling port 82 of the directional coupler 80-1, the amplifier 50-1, and the filter 90-1. It was confirmed that the signal was attenuated to ⁇ 46 dBm and superimposed on the output signal (signal intensity ⁇ 17 Bm) output from the MR element 31 of the high frequency oscillator 30-1.
  • the output signal of ⁇ 46 dBm is lower by about three digits than the output signal of ⁇ 17 dBm, and can be ignored in practice.
  • the output signal output from the MR element 31 of the high-frequency oscillator 30-1 is finally attenuated to -46 dBm, and the output signal output from the MR element 31 of the high-frequency oscillator 30-2 ( The signal strength is -17 Bm), but can be ignored in practice.
  • FIG. 9 is a graph showing the measurement results of the spectral intensity of the MR element 31 when the bias voltage applied to the MR element 31 of the high-frequency oscillator 30-1 is changed in the range of 235 to 255 mV.
  • FIG. 10 is a graph showing the measurement results of the spectral intensity of the MR element 31 when the bias voltage applied to the MR element 31 of the high-frequency oscillator 30-2 is changed in the range of 200 to 220 mV.
  • a magnetic field application mechanism 34 is used to apply a magnetic field of 3 kOe at an angle of 120 ° with respect to the fixed layer 31C of each MR element 31 of the high-frequency oscillators 30-1 and 30-2. did.
  • FIG. 11 is a graph showing the oscillation frequency f MR1 of the MR element 31 when the bias voltage applied to the MR element 31 of the high frequency oscillator 30-1 is changed in the range of 235 to 255 mV, and is obtained from the measurement results of FIG. It is a thing. From the graph of FIG. 11, the oscillation frequency f MR1 of the MR element 31 of the high-frequency oscillator 30-1 is in the range of about 6.10 GHz to about 6.18 GHz, centering on 6.16 GHz, in the bias voltage range of 235 to 255 mV. It can be confirmed that the change is almost monotonous.
  • FIG. 11 is a graph showing the oscillation frequency f MR1 of the MR element 31 when the bias voltage applied to the MR element 31 of the high frequency oscillator 30-1 is changed in the range of 235 to 255 mV, and is obtained from the measurement results of FIG. It is a thing. From the graph of FIG. 11, the oscillation frequency f MR1 of the MR
  • the peak width of the output signal output from each MR element 31 of the high-frequency oscillators 30-1 and 30-2 is as low as about 3 kHz, and the oscillation frequencies f MR1 and f MR2 are It can be seen that it can be stabilized.
  • the oscillation frequency was measured without injecting the reference signal into the MR element (that is, without synchronizing the MR element), the peak width of the output was about 3 MHz and was very high and unstable.
  • FIG. 16 shows a high frequency when the bias voltage applied to the MR element 31 of the high frequency oscillator 30-2 is changed around 210 mV while the bias voltage applied to the MR element 31 of the high frequency oscillator 30-1 is fixed at 250 mV. It is a graph which shows the result of having measured the phase difference between the output signal of the oscillator 30-1, and the output signal of the high frequency oscillator 30-2. The phase difference changed from 3 ⁇ / 4 to 0 by changing the bias voltage applied to the MR element 31 of the high-frequency oscillator 30-2.
  • N 2
  • N 3 or more. be able to.
  • N is preferably an integer of 2 to 40.
  • Table 1 shows specific examples of phase modulation by the phase modulation high-frequency oscillator array 10.
  • Table 1 shows respective phase differences of output 2, output 3,..., Output N with respect to output 1.
  • “output 1”, “output 2”,..., “Output N” are respectively “output signal of high-frequency oscillator 30-1,” “output signal of high-frequency oscillator 30-2”,. 30-N output signal ".
  • the phase differences of output 2, output 3,..., Output N with respect to output 1 are all “0”.
  • the phase differences of output 2, output 3, output 4, output 5,..., Output N with respect to output 1 are “0 to ⁇ ”, “0”, “0 to ⁇ ”, “0”, ... "0 to ⁇ ".
  • phase differences of output 2, output 3, output 4, output 5,..., Output N with respect to output 1 are “0”, “0 to ⁇ ”, “0”, “0 to ⁇ ”, ..., "0".
  • “0 to ⁇ ” represents an arbitrary phase within the range of 0 to ⁇ .
  • the output 2, output 3, output 4, output 5,..., Output N with respect to the output 1 have phase differences of “0”, “ ⁇ ”, “ ⁇ ”, “ ⁇ / 2”,. “ ⁇ / 3”.
  • the phase differences of output 2, output 3, output 4, output 5,..., Output N with respect to output 1 are “ ⁇ / 2”, “ ⁇ / 3”, “ ⁇ / 4”, “ ⁇ / 5 ", ...,” ⁇ / N ".
  • Each phase difference of output 2, output 3,..., Output N with respect to output 1 may be fixed to a specific phase difference, or may be changed over time.
  • the phase modulation high-frequency oscillator array 10 performs phase modulation as shown in Example 1 in a certain period, phase modulation as shown in Example 2 in a subsequent period, and further in Example 3 in a subsequent period. Phase modulation may be performed as shown.
  • the phase modulation high-frequency oscillator array 10 of this embodiment is useful for a phased array radar, a communication device, and the like.
  • the MR element 31 functions as a high-frequency oscillation element that outputs a high-frequency signal, a small and inexpensive phase-modulated high-frequency oscillator array 10 can be provided.

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Hall/Mr Elements (AREA)

Abstract

L'invention concerne un réseau d'oscillateurs haute fréquence à modulation de phase apte à faire varier une différence de phase entre une pluralité de signaux de sortie selon les besoins. Le réseau d'oscillateurs haute fréquence à modulation de phase (10) comprend : une source de signal de référence (20) qui fournit un signal de référence ayant une fréquence qui est n fois ou 1/n fois une fréquence d'oscillation f; une pluralité d'éléments magnétorésistifs (31) ayant des fréquences d'oscillation alignées avec f par verrouillage par injection; une pluralité de mécanismes d'application de tension de polarisation (32) qui, en faisant varier une tension de polarisation appliquée à au moins deux éléments magnétorésistifs (31) qui sont sélectionnés parmi la pluralité d'éléments magnétorésistifs (31) comme souhaité, fait varier une différence de phase entre des signaux de sortie à partir desdits éléments magnétorésistifs (31); et une pluralité de moyens d'élimination (40) qui éliminent le signal de référence entrant dans un trajet de signal pour transmettre des signaux de sortie respectifs à partir de la pluralité d'éléments magnétorésistifs (31).
PCT/JP2017/042972 2016-12-02 2017-11-30 Réseau d'oscillateurs haute fréquence à modulation de phase WO2018101386A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2018554231A JP6784377B2 (ja) 2016-12-02 2017-11-30 位相変調高周波発振器アレイ

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-234939 2016-12-02
JP2016234939 2016-12-02

Publications (1)

Publication Number Publication Date
WO2018101386A1 true WO2018101386A1 (fr) 2018-06-07

Family

ID=62241737

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2017/042972 WO2018101386A1 (fr) 2016-12-02 2017-11-30 Réseau d'oscillateurs haute fréquence à modulation de phase

Country Status (2)

Country Link
JP (1) JP6784377B2 (fr)
WO (1) WO2018101386A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006094333A (ja) * 2004-09-27 2006-04-06 Mitsubishi Electric Corp ２周波発振器およびレーダ装置
JP2006295908A (ja) * 2005-03-18 2006-10-26 Japan Science & Technology Agency マイクロ波伝送回路一体型マイクロ波発生素子及びマイクロ波伝送回路一体型マイクロ波検出素子
JP2007221764A (ja) * 2006-01-20 2007-08-30 Sharp Corp 可変周波数発振回路、およびそれを備えた高周波回路
WO2016103688A1 (fr) * 2014-12-25 2016-06-30 株式会社デンソー Dispositif d'antenne et émetteur à hautes fréquences
WO2016175249A1 (fr) * 2015-04-30 2016-11-03 国立研究開発法人産業技術総合研究所 Circuit oscillateur haute fréquence à verrouillage de phase

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006094333A (ja) * 2004-09-27 2006-04-06 Mitsubishi Electric Corp ２周波発振器およびレーダ装置
JP2006295908A (ja) * 2005-03-18 2006-10-26 Japan Science & Technology Agency マイクロ波伝送回路一体型マイクロ波発生素子及びマイクロ波伝送回路一体型マイクロ波検出素子
JP2007221764A (ja) * 2006-01-20 2007-08-30 Sharp Corp 可変周波数発振回路、およびそれを備えた高周波回路
WO2016103688A1 (fr) * 2014-12-25 2016-06-30 株式会社デンソー Dispositif d'antenne et émetteur à hautes fréquences
WO2016175249A1 (fr) * 2015-04-30 2016-11-03 国立研究開発法人産業技術総合研究所 Circuit oscillateur haute fréquence à verrouillage de phase

Also Published As

Publication number Publication date
JP6784377B2 (ja) 2020-11-11
JPWO2018101386A1 (ja) 2019-10-24

Similar Documents

Publication Publication Date Title
Dürrenfeld et al. A 20 nm spin Hall nano-oscillator
Ranjbar et al. CoFeB-based spin Hall nano-oscillators
CN107919434B (zh) 频率可变磁电阻效应元件以及使用该元件的振荡器、检波器及滤波器
US10074688B2 (en) Magnetoresistive effect device with first and second magnetoresistive effect elements having opposite current flows relative to the ordering of the layers of the elements
US10957962B2 (en) Magnetoresistive effect device
Seki et al. High power all-metal spin torque oscillator using full Heusler Co2 (Fe, Mn) Si
US9153771B2 (en) Thin film magnetic element having a pair of first soft magnetic layers sandwiching a magnetoresistive effect film and a coil windingly formed about a second soft magnetic layer
WO2018052062A1 (fr) Dispositif à effet de magnétorésistance et module à effet de magnétorésistance
US10483458B2 (en) Magnetoresistive effect device
Camley et al. High-frequency signal processing using magnetic layered structures
US10804870B2 (en) Magnetoresistance effect device and high frequency device
Yamamoto et al. Zero-field spin torque oscillation in Co2 (Fe, Mn) Si with a point contact geometry
Smith et al. Dimensional crossover in spin Hall oscillators
Tsunegi et al. Spin torque diode effect of the magnetic tunnel junction with MnGa free layer
Sani et al. Microwave signal generation in single-layer nano-contact spin torque oscillators
WO2018101386A1 (fr) Réseau d'oscillateurs haute fréquence à modulation de phase
JP6511531B2 (ja) 磁気抵抗効果デバイス
Persson et al. Spin-torque oscillator in an electromagnet package
Balinsky et al. Modulation of the spectral characteristics of a nano-contact spin-torque oscillator via spin waves in an adjacent yttrium-iron garnet film
JP2018046080A (ja) 共振素子、共振器および磁気抵抗効果デバイス
JP2006005887A (ja) マイクロ波伝送線路およびマイクロ波フィルタ
Kuanr et al. Nonlinear microwave effects on iron based microstrip filter
JP6826349B2 (ja) 位相可変型逓倍器
US20210181123A1 (en) Device and Related Method for Providing Unidirectional Microwave Propagation
US10332666B2 (en) Magnetoresistance effect device and high frequency device

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 17875134

Country of ref document: EP

Kind code of ref document: A1

ENP Entry into the national phase

Ref document number: 2018554231

Country of ref document: JP

Kind code of ref document: A

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 17875134

Country of ref document: EP

Kind code of ref document: A1