WO2018099766A1 - Procédé d'assemblage d'un composant semi-conducteur à une contre-partie par soudage laser et dispositif pourvu d'un composant semi-conducteur - Google Patents

Procédé d'assemblage d'un composant semi-conducteur à une contre-partie par soudage laser et dispositif pourvu d'un composant semi-conducteur Download PDF

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Publication number
WO2018099766A1
WO2018099766A1 PCT/EP2017/079926 EP2017079926W WO2018099766A1 WO 2018099766 A1 WO2018099766 A1 WO 2018099766A1 EP 2017079926 W EP2017079926 W EP 2017079926W WO 2018099766 A1 WO2018099766 A1 WO 2018099766A1
Authority
WO
WIPO (PCT)
Prior art keywords
solder layer
semiconductor component
laser beam
contacts
connection contacts
Prior art date
Application number
PCT/EP2017/079926
Other languages
German (de)
English (en)
Inventor
Marc Christopher WURZ
Ludger Overmeyer
Philipp VON WITZENDORFF
Jörg Hermsdorf
Sebastian Bengsch
Original Assignee
Gottfried Wilhelm Leibniz Universität Hannover
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Gottfried Wilhelm Leibniz Universität Hannover filed Critical Gottfried Wilhelm Leibniz Universität Hannover
Publication of WO2018099766A1 publication Critical patent/WO2018099766A1/fr

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/0008—Soldering, e.g. brazing, or unsoldering specially adapted for particular articles or work
    • B23K1/0016—Brazing of electronic components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/005—Soldering by means of radiant energy
    • B23K1/0056—Soldering by means of radiant energy soldering by means of beams, e.g. lasers, E.B.
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/19—Soldering, e.g. brazing, or unsoldering taking account of the properties of the materials to be soldered
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K1/00—Soldering, e.g. brazing, or unsoldering
    • B23K1/20—Preliminary treatment of work or areas to be soldered, e.g. in respect of a galvanic coating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/3494—Heating methods for reflowing of solder
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/812—Applying energy for connecting
    • H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
    • H01L2224/81224—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/18—Printed circuits structurally associated with non-printed electric components
    • H05K1/189—Printed circuits structurally associated with non-printed electric components characterised by the use of a flexible or folded printed circuit
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/10—Details of components or other objects attached to or integrated in a printed circuit board
    • H05K2201/10613—Details of electrical connections of non-printed components, e.g. special leads
    • H05K2201/10954—Other details of electrical connections
    • H05K2201/10984—Component carrying a connection agent, e.g. solder, adhesive
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2203/00—Indexing scheme relating to apparatus or processes for manufacturing printed circuits covered by H05K3/00
    • H05K2203/10—Using electric, magnetic and electromagnetic fields; Using laser light
    • H05K2203/107—Using laser light
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
    • H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
    • H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
    • H05K3/341—Surface mounted components
    • H05K3/3431—Leadless components
    • H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components

Definitions

  • the invention relates to a method for connecting a semiconductor component, which has electrical connection contacts on at least one side, with a counterpart, which has electrical connection contacts assigned to the connection contacts, according to claim 1.
  • the invention also relates to an arrangement comprising such a semiconductor device and a film substrate, wherein the semiconductor device is attached to the film substrate.
  • the invention relates to the field of so-called chip bonding.
  • Semiconductor devices of the type mentioned in the opening paragraph are also referred to as “chips.”
  • bonding the connection of terminal contacts of the chip to other terminals, e.g. on a substrate, a printed circuit board or a flexible film serving as a substrate.
  • the invention has for its object to optimize a chip bonding process and the product thus produced manufacturing technology.
  • This object is achieved according to claim 1 by a method for connecting a semiconductor component which has electrical connection contacts on at least one side, with a counterpart, which has electrical counter-connection contacts assigned to the connection contacts, with the following steps: a) arranging the semiconductor component relative to the Counterpart in such a way that each of the connection contacts to be connected to a mating terminal contact is aligned with the associated mating terminal contact, at least one solder layer being arranged between connecting contacts and mating terminal contacts, b) irradiating a respective solder layer between assigned connection contacts and counter-connection contacts by means of a laser beam through the semiconductor device until the at least one solder layer melts.
  • the invention allows a highly efficient electrical contacting of the semiconductor device to the counterpart with a short process time and excellent durability of the connection. So a solder connection can be made within a few tenths of a second. Surprisingly, particularly good results result when the laser beam is directed through the semiconductor component to the contact point.
  • conventional semiconductor devices for example, based on silicon, actually do not appear translucent, because they are not transparent to light in the visible range, it was found that the semiconductor material has sufficient transparency at least in a certain wavelength range to the connection process with the laser beam through the Semiconductor device through the semiconductor device through without damaging the semiconductor device thereby, for example, by excessive heating.
  • a transmission chip bonding process can be realized.
  • the method is also suitable for other semiconductor devices, eg for silicon carbide semiconductors.
  • a laser beam is much easier and more precisely positioned automatically than previously used heating devices.
  • a soldering process can be realized instead of previously used bonding processes.
  • the semiconductor component can be pressed against its counterpart, e.g. with a contact pressure of about 1, 5 MPa.
  • the contact pressure can e.g. in the range of 0.6 MPa to 4.7 MPa.
  • the solder layer e.g. an indium-tin combination, an indium-bismuth combination or ITO (indium-titanium oxide) can be used.
  • the semiconductor device may e.g. to be an RFID chip.
  • the counterpart can e.g. a printed circuit board, a film substrate or other substrate, e.g. a ceramic substrate, or another semiconductor device.
  • the method according to the invention makes it possible, in particular, to attach semiconductor components to a counterpart, e.g. a film substrate that is relatively temperature sensitive. This is possible because the heating by the laser beam can be very short-term and locally limited, in the region of the solder layer between a terminal contact and an associated mating terminal contact. The resulting heat is thus absorbed in the layer of solder, which is only briefly locally melted, so that the resulting increase in temperature in the environment is negligible.
  • the laser beam may e.g. for a given, experimentally optimized emission duration, e.g. for 0.2 seconds or 0.3 seconds.
  • the emission time is to be determined in such a way that the desired melting of the solder layer takes place, but further heating of the connection point is minimized.
  • At least two solder layers of different materials are formed between a terminal contact and the counter-terminal contact associated therewith, which do not form into the solder during melting by the laser beam. mixing alloy.
  • This allows a suitable combination of materials of the materials of the two solder layers in coordination with the requirements of the counterpart and possibly also of the semiconductor device, for example with regard to a maximum heating temperature of the counterpart.
  • a compilation of the materials of the two solder layers of indium and tin or indium and bismuth can be selected.
  • the resulting from these materials during melting alloy has a relatively low temperature of the eutectic of about 1 17 degrees Celsius, so that during the soldering damage to the film substrate can be avoided.
  • the at least one solder layer is a eutectic alloy or at least forms a eutectic alloy after melting.
  • This has the advantage that a relatively low melting temperature of the at least one solder layer can be realized, which in turn is favorable for temperature-sensitive counterparts and semiconductor components.
  • a further advantage is that with a eutectic the liquid phase can be better controlled and unwanted wetting of surrounding structures can be prevented.
  • the at least one solder layer or several solder layers are applied to the connection contacts and / or the counter-connection contacts by means of vapor deposition.
  • vapor deposition known processes of chemical vapor deposition (CVD - chemical vapor deposition) or physical vapor deposition (PVD - physical vapor deposition) can be used.
  • CVD - chemical vapor deposition chemical vapor deposition
  • PVD - physical vapor deposition physical vapor deposition
  • the laser beam has a wavelength of at least 1.5 ⁇ .
  • the laser beam can have a maximum wavelength of 10 ⁇ .
  • the wavelength can be in the range of 1.8 ⁇ to 2.2 ⁇ in particular.
  • an additional material layer to be applied as adhesion promoter and / or as diffusion barrier to the solder layer at the connection contact and / or the mating connection contact assigned to it.
  • the additional material layer can thus serve as a bonding agent to the solder layer and thus improve the adhesion.
  • the additional material layer can also serve as a diffusion barrier to the solder layer, so that the material of the solder layer does not diffuse into the semiconductor component or the counterpart.
  • Such an additional material layer may e.g. made of chrome.
  • the laser beam is emitted via a separate optical unit from a laser beam generating unit, which is connected to the laser beam generating unit via a light guide cable.
  • the optical unit may comprise optical elements such as e.g. Have lenses through which the laser beam emitted from the optical unit is emitted bundled, i. focused on a particular point.
  • the efficiency of the method according to the invention can be further increased.
  • the flexibility in the application is improved because only the relatively compact optical unit must be automatically positioned, the laser beam generating unit can be arranged fixed in position.
  • a laser beam generating unit e.g. a DPSS laser with a power range of 5 W to 70 W is sufficient.
  • the above-mentioned object is further achieved by an arrangement having a semiconductor component, which has electrical connection contacts on at least one side, and a film substrate having the connection contacts associated electrical counter-connection contacts, wherein the semiconductor device is attached to the film substrate, wherein the connection contacts with each associated counter-terminal contacts in a range between the Semiconductor device and the film substrate are soldered over at least one solder layer.
  • a semiconductor component which has electrical connection contacts on at least one side
  • a film substrate having the connection contacts associated electrical counter-connection contacts, wherein the semiconductor device is attached to the film substrate, wherein the connection contacts with each associated counter-terminal contacts in a range between the Semiconductor device and the film substrate are soldered over at least one solder layer.
  • the arrangement according to the invention can also be developed advantageously by the aforementioned features, for example by one or more solder layers between a terminal contact and the counter-terminal contact associated therewith.
  • the at least one solder layer may comprise a eutectic alloy.
  • the solder layer between a connection contact and the counter-connection contact assigned to it is formed at least in regions from separate material layers of different materials. This is e.g. then the case when originally between at least two solder layers of different materials were present between a terminal contact and the mating terminal contact associated therewith, which only merge during melting by the laser beam to form an alloy forming the solder. In this case, in the area of action of the laser beam, the named alloy is formed, but in surrounding areas, at least in part, the separate material layers (solder layers) remain present.
  • the film substrate may e.g. from polymethylmethacrylate (PMMA) or polycarbonate (PC).
  • PMMA polymethylmethacrylate
  • PC polycarbonate
  • metallized areas e.g. an aluminum coating to be present for the formation of printed conductors and / or counter-terminal contacts.
  • Figure 3 an enlarged detail at the junction between a terminal contact and a mating terminal contact in an enlarged, perspective view
  • Figure 4 - a sectional view of the connection point in a first embodiment
  • Figure 5 - a sectional view of the connection point in a second embodiment.
  • FIG. 1 shows a semiconductor component 1 with connection contacts 2.
  • the semiconductor component may be formed as a silicon chip.
  • the connection contacts 2 need not be metallic contacts, but may be corresponding connection points of the chip itself.
  • a counterpart 3 e.g. a film substrate, with counter-connection contacts 4, which are arranged as a mirror image of the connection contacts 2, so to speak.
  • the semiconductor device 1 is now to be connected to all the connection contacts 2 with the respective associated counter-connection contacts 4 of the counterpart 3.
  • Figure 2 shows that the semiconductor device 1 is arranged accurately on the counterpart 2, such that in each case a terminal contact 2 is opposite to an associated mating terminal contact 4 and is suitably aligned with it.
  • Each of the connection points between a terminal contact 2 and a counter-terminal contact 4 is now irradiated by a laser beam 5, wherein the laser beam 5 is passed through the semiconductor device 1.
  • Between the terminal contact 2 and an associated counter-terminal contact 4 is already at least one solder layer, which is melted by the laser beam 5 to form a solder joint.
  • the laser used has a stationary laser beam generating unit 8, which is connected via an optical cable 7, for example a fiber optic cable, with an optical unit 6. In the optical unit 6, the laser beam is focused so that a focused laser beam 5 is emitted.
  • FIG. 3 shows an enlarged view of the connection point between a connection contact 2 and a counter-connection contact 4.
  • a solder layer 9 arranged between the connection contact 2 and the counterconnection contact 4 can be seen.
  • the focused laser beam 5 causes a specific region in the solder layer 9 10 melted, which then forms a solder joint.
  • the area 10 may e.g. have a diameter in the range of 80 ⁇ to 200 ⁇ .
  • FIG. 4 shows the layer structure according to FIG. 3 in a further detailed, enlarged side sectional view.
  • the semiconductor device 1 with the terminal contact 2, e.g. with a layer thickness of 525 ⁇ .
  • Underneath are a first solder layer 12 and a second solder layer 13.
  • the line 1 1 illustrates the separation between the semiconductor component 1 and the counterpart 3. Accordingly, firstly the first solder layer 12 is arranged on the semiconductor component 1, the second solder layer 13 on the counterpart 3.
  • the first solder layer 12 may, for example, be arranged. of tin with a layer thickness of e.g. 1, 17 m or bismuth with a layer thickness of 0.383 ⁇ exist.
  • the second solder layer 13 may be e.g.
  • the solder layer 9 is formed.
  • the layer thicknesses of the first and the second solder layer 12, 13 it is advantageous to determine this according to the stoichiometric ratios with which after the melting process by the laser beam 5, the eutectic alloy between the different materials of the first and the second solder layer 12, 13 is formed.
  • solder joint marked by region 10, on which the eutectic alloy is formed is marked by region 10, on which the eutectic alloy is formed.
  • a layer 14 of chromium for example with a layer thickness of 50 nm, may be present.
  • This layer 14 can act as a bonding agent and / or as a diffusion barrier to the solder layer 9, 12, 13.
  • the mating terminal contact 4 and below it the counterpart 3 may be present, for example, an aluminum layer 4 and a polymer film 3.
  • a further semiconductor device may be present, for example with a silicon layer.
  • FIG. 5 shows an alternative layer structure, which differs from FIG. 4 in that also in the upper region, i. between the semiconductor device 1 and the terminal contact 2 and the solder layer 9, 12, 13 an additional material layer 16 is present, which serves as a bonding agent and / or as a diffusion barrier to the solder layer 9, 12, 13.
  • the material layer 16 may be e.g. a layer of chromium with a thickness of 50 nm.

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Wire Bonding (AREA)
  • Electric Connection Of Electric Components To Printed Circuits (AREA)

Abstract

L'invention concerne un procédé d'assemblage d'un composant semi-conducteur (1), lequel comprend sur au moins un côté des contacts de connexion électriques, doté d'une contre-partie (3), laquelle comprend des contre-contacts de connexion électriques associés aux contacts de connexion électriques, ledit procédé comprenant les étapes consistant : à associer le composant semi-conducteur (1) par rapport à la contre-partie (3) de telle sorte qu'un contact de connexion à connecter avec un contre-contact de connexion respectif est aligné vers le contre-contact de connexion associé, entre les contacts de connexion à connecter et les contre-contacts de connexion au moins une couche de soudure étant respectivement disposée ; à irradier à travers une couche de soudure respective, entre les contacts de connexion associés et les contre-contacts de connexion, au moyen d'un faisceau laser (5), à l'aide du composant semi-conducteur (1), jusqu'à ce que l'au moins une couche de soudure fonde. L'invention concerne en outre un dispositif (1, 3) pourvu d'un tel composant semi-conducteur (1) et d'un substrat en feuille (3), le composant semi-conducteur (1) étant fixé au substrat en feuille (3).
PCT/EP2017/079926 2016-11-30 2017-11-21 Procédé d'assemblage d'un composant semi-conducteur à une contre-partie par soudage laser et dispositif pourvu d'un composant semi-conducteur WO2018099766A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102016123180.0A DE102016123180A1 (de) 2016-11-30 2016-11-30 Verfahren zum Verbinden eines Halbleiterbauelements mit einem Gegenstück sowie Anordnung mit einem Halbleiterbauelement
DE102016123180.0 2016-11-30

Publications (1)

Publication Number Publication Date
WO2018099766A1 true WO2018099766A1 (fr) 2018-06-07

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PCT/EP2017/079926 WO2018099766A1 (fr) 2016-11-30 2017-11-21 Procédé d'assemblage d'un composant semi-conducteur à une contre-partie par soudage laser et dispositif pourvu d'un composant semi-conducteur

Country Status (2)

Country Link
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WO (1) WO2018099766A1 (fr)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109732163B (zh) * 2019-03-18 2021-05-11 广州煌牌自动设备有限公司 一种焊接工艺方法及焊接设备

Citations (7)

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Publication number Priority date Publication date Assignee Title
US4404453A (en) * 1981-09-10 1983-09-13 Asta, Ltd. Laser bonding of microelectronic circuits
DE3247338A1 (de) 1982-12-21 1984-06-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum laserloeten von flexiblen verdrahtungen
US5591037A (en) * 1994-05-31 1997-01-07 Lucent Technologies Inc. Method for interconnecting an electronic device using a removable solder carrying medium
US20030019846A1 (en) * 2001-03-28 2003-01-30 Sinkunas Peter J. Flex to flex soldering by diode laser
WO2003075337A1 (fr) * 2002-03-01 2003-09-12 Agng, Llc Assemblage sans flux de paquets a semi-conducteurs de la taille de puce
DE10334391A1 (de) * 2003-07-28 2005-03-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Erzeugung von Verbindungen in der Mikroelektronik
US20050242161A1 (en) * 2004-04-30 2005-11-03 Visteon Global Technologies, Inc. Systems and methods for laser soldering flat flexible cable

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Publication number Priority date Publication date Assignee Title
JP5214345B2 (ja) * 2008-06-24 2013-06-19 ヤマハ発動機株式会社 レーザーリフロー方法および装置
US9161448B2 (en) * 2010-03-29 2015-10-13 Semprius, Inc. Laser assisted transfer welding process
EP2562692B1 (fr) * 2011-08-25 2013-10-09 Textilma Ag Module de puce RFID

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4404453A (en) * 1981-09-10 1983-09-13 Asta, Ltd. Laser bonding of microelectronic circuits
DE3247338A1 (de) 1982-12-21 1984-06-28 Siemens AG, 1000 Berlin und 8000 München Verfahren zum laserloeten von flexiblen verdrahtungen
US5591037A (en) * 1994-05-31 1997-01-07 Lucent Technologies Inc. Method for interconnecting an electronic device using a removable solder carrying medium
US20030019846A1 (en) * 2001-03-28 2003-01-30 Sinkunas Peter J. Flex to flex soldering by diode laser
WO2003075337A1 (fr) * 2002-03-01 2003-09-12 Agng, Llc Assemblage sans flux de paquets a semi-conducteurs de la taille de puce
DE10334391A1 (de) * 2003-07-28 2005-03-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Verfahren zur Erzeugung von Verbindungen in der Mikroelektronik
US20050242161A1 (en) * 2004-04-30 2005-11-03 Visteon Global Technologies, Inc. Systems and methods for laser soldering flat flexible cable

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