WO2018099055A1 - 一种蒸镀掩模板及蒸镀方法 - Google Patents

一种蒸镀掩模板及蒸镀方法 Download PDF

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Publication number
WO2018099055A1
WO2018099055A1 PCT/CN2017/090231 CN2017090231W WO2018099055A1 WO 2018099055 A1 WO2018099055 A1 WO 2018099055A1 CN 2017090231 W CN2017090231 W CN 2017090231W WO 2018099055 A1 WO2018099055 A1 WO 2018099055A1
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Prior art keywords
vapor deposition
layer
deposition mask
evaporation
shielding
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Ceased
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PCT/CN2017/090231
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English (en)
French (fr)
Inventor
杨凡
梁逸南
郭坤
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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BOE Technology Group Co Ltd
Ordos Yuansheng Optoelectronics Co Ltd
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Priority to US16/066,222 priority Critical patent/US11104984B2/en
Publication of WO2018099055A1 publication Critical patent/WO2018099055A1/zh
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/18—Carrier blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • At least one embodiment of the present disclosure is directed to an evaporation mask and an evaporation method.
  • An organic light emitting diode display is a self-luminous display device.
  • Organic light-emitting diode displays are increasingly popular in the market due to their low power consumption, high display brightness, wide viewing angle and fast response.
  • a typical organic light emitting diode includes a cathode, a functional layer, and an anode.
  • the functional layer includes a hole injection layer, a hole transport layer, a hole blocking layer, an organic light emitting layer, an electron transport layer, an electron blocking layer, and an electron injecting layer.
  • At least one embodiment of the present disclosure provides an evaporation mask and an evaporation method.
  • the display effect of the display device can be improved, and the position of the display peripheral region can be ensured without abnormality, thereby ensuring the appearance inspection yield of the product.
  • At least one embodiment of the present disclosure provides an evaporation mask comprising a masking region and a plurality of vapor deposition regions arranged in an array.
  • Each of the plurality of vapor deposition zones has an open structure as a whole; an occlusion zone is disposed around each of the vapor deposition zones to separate adjacent vapor deposition zones, and the occlusion zone is provided with a plurality of open cells.
  • a plurality of opening structures are disposed in a region of the shielding region adjacent to each of the vapor deposition regions.
  • a plurality of opening structures penetrate the shielding area.
  • a plurality of opening structures are disposed in an annular region having a width of 60 ⁇ m surrounding each of the vapor deposition zones.
  • a maximum dimension of each of the plurality of open-cell structures along a cross section parallel to the evaporation mask is 30 micrometers to 60 micrometers.
  • the interval between the plurality of opening structures is 30 micrometers to 40 micrometers.
  • a shape of each of the plurality of opening structures taken along a cross section parallel to the evaporation mask includes a circle or a polygon.
  • the occlusion region includes a plurality of first occlusion strips and a plurality of second occlusion strips, the plurality of first occlusion strips extending in the first direction, and the plurality of second occlusions
  • the strip extends in the second direction, and the first occlusion strip and the second occlusion strip are disposed to intersect.
  • the first shielding strip and the second shielding strip are vertically disposed to define a plurality of vapor deposition zones having a rectangular shape.
  • the shape of each of the vapor deposition zones includes a polygon or a circle.
  • the shape of the opening structure of the vapor deposition zone is the same as the shape of the common layer to be vapor-deposited.
  • the common layer includes a hole transport layer, an electron transport layer, a hole injection layer, an electron injection layer, a hole blocking layer, an electron blocking layer, and a cathode layer. At least one.
  • At least one embodiment of the present disclosure provides a vapor deposition method comprising: depositing a film layer having the same shape as an opening structure on a substrate by using the vapor deposition mask.
  • the film layer includes a common layer to be evaporated.
  • the vapor deposition common layer includes an evaporation hole transport layer, an electron transport layer, a hole injection layer, an electron injection layer, a hole blocking layer, an electron blocking layer, and a cathode. At least one of the layers.
  • FIG. 1 is a schematic view of an evaporation mask
  • FIG. 2 is a schematic view of an evaporation mask according to an embodiment of the present disclosure
  • FIG. 3 is a schematic diagram of an evaporation mask according to another embodiment of the present disclosure.
  • FIG. 4 is a schematic diagram of an evaporation method according to an embodiment of the present disclosure.
  • FIG. 1 is a schematic view of an evaporation mask, as shown in FIG. 1, an organic light emitting diode display device is vapor-deposited using a vapor deposition mask 01 having an open structure during the preparation process, and the shape of the opening structure is to be steamed.
  • the plated common layers are identical in shape, for example, of comparable size.
  • the common layer to be evaporated is generally a layer having a thick film layer, and includes a hole injection layer, a hole transport layer, a hole blocking layer, an electron transport layer, an electron blocking layer, an electron injection layer, and the like.
  • the vapor deposition mask 01 includes a plurality of vapor deposition zones 011 arranged in an array, and a masking zone 012 surrounding each vapor deposition zone 011, which is used to separate each adjacent vapor deposition zone 011.
  • a masking zone 012 surrounding each vapor deposition zone 011, which is used to separate each adjacent vapor deposition zone 011.
  • some of the particles having a larger diameter are likely to adhere to the blocking region 012. If the size of these larger particles is above 100 microns, for example, if the particle diameter is about 200 microns, the edge of a portion of the vapor deposition zone 011 will be blocked, which will cause unevenness at the edge of the vaporized common layer, thereby affecting the display.
  • the periphery of the region for example, the vapor deposition effect of the scan driving circuit region, and the vapor deposition effect of the display region.
  • the panel is detected, different degrees of dark spots or black spots appear after the display area is lit, thus affecting the appearance detection rate of the display area.
  • the larger particles on the edge blocking region 012 of the adhesion evaporation region 011 may further Adhered to the vapor-deposited substrate, affecting the periphery of the display area, such as the evaporation effect of the scanning drive circuit area, yellowing or black spots appear, thus affecting the appearance inspection rate around the display area.
  • a part of the particles having a large size adheres to the substrate, which may cause unevenness of the cover glass and air leakage.
  • At least one embodiment of the present disclosure provides an evaporation mask comprising an occlusion region and a plurality of evaporation regions arranged in an array.
  • Each of the plurality of vapor deposition zones has an open structure as a whole; an occlusion zone is disposed around each of the vapor deposition zones to separate adjacent vapor deposition zones, and the occlusion zone is provided with a plurality of open cells.
  • At least one embodiment of the present disclosure provides an evaporation method including vapor deposition on a substrate by using the vapor deposition mask described above to form a film layer having the same shape as that of the opening structure.
  • the vapor deposition mask is used to sequentially vapor-deposit the film layer, thereby improving the display effect of the display device and ensuring that the position of the display peripheral region is not abnormal, thereby ensuring the appearance inspection yield of the product.
  • the evaporation mask 100 includes a masking region 120 and a plurality of vapor deposition regions 110 arranged in an array.
  • Each of the plurality of vapor deposition zones 110 is an open structure 111 as a whole; an occlusion zone 120 is disposed around each vapor deposition zone 110 to separate adjacent vapor deposition zones 110, and the occlusion zone 120 is disposed in a plurality An opening structure 121.
  • the opening structure 121 can be formed by etching, which is not limited herein.
  • the occlusion region 120 as shown in FIG.
  • each of the vapor deposition zones 110 that is, for each vapor deposition reticle unit, including an evaporation zone 110 having an opening structure 111 and an occlusion zone 120 surrounding the vapor deposition zone 110.
  • the occlusion area 120 may partition the evaporation zone 110 in the adjacent evaporation reticle unit.
  • the occlusion region 120 in this embodiment can block evaporation of the evaporation material in the substrate region where the occlusion region 120 is disposed.
  • the vapor deposition zone 110 having the opening structure 111 can be vapor-deposited, and the vapor-deposited substrate, for example, the organic light-emitting diode display substrate and the region corresponding to the vapor deposition zone 110 are vapor-deposited. It should be noted that the vapor deposition zone 110 in this embodiment is mainly used for vapor-depositing a common layer portion in the organic light emitting diode display substrate, thereby improving luminous efficiency.
  • the larger diameter particles generated by the evaporation source are likely to adhere to the shielding portion, and the organic light-emitting diodes are sequentially vapor-deposited to display the common layer in the substrate.
  • the particles attached to the portion of the occlusion zone continue to accumulate and become so large that they affect the evaporation effect.
  • an opening structure 121 is disposed in the shielding area 120, which is reduced.
  • the area where the large particles can adhere to the shielding area 120 is reduced, and the adhesion of the particles on the shielding area 120 can be effectively reduced, thereby reducing the adhesion amount of the large particles and improving the evaporation effect.
  • the vapor deposition mask 100 is described as an example in which the organic light emitting diode display substrate is vapor-deposited.
  • the present invention is not limited thereto, and may be another substrate.
  • a part of the larger particles may have an open area 121 on the occlusion area 120, which reduces the area that can be attached to the occlusion area 120, and is difficult to adhere to the occlusion area 120;
  • the larger particles attached to the occlusion zone 120 will collect other small particles during the subsequent deposition of the common layer to form larger particles.
  • the newly formed large particles increase in gravity, but the adhesion area on the occlusion area 120 is insufficient to maintain their continued attachment, and thus falls, to achieve the purpose of reducing the amount of large-sized particles attached.
  • the opening structure 121 is disposed in the shielding area 120, which can effectively prevent the occurrence of particle accumulation during the subsequent evaporation process, prevent the particle diameter from continuously increasing, thereby improving the evaporation effect of the display area and improving the uniformity of the display area. Sexuality, to ensure that there is no abnormality in the surrounding area.
  • a broken line frame in the vapor deposition zone 110 indicates that each of the vapor deposition zones 110 is entirely an open structure 111, and the shape of the opening structure 111 is the same as the shape of the common layer to be vapor-deposited, for example, the size is equivalent.
  • the substrate to be evaporated corresponding to the opening structure 111 includes a display peripheral area, such as a scan driving circuit area, in addition to the display area. Since the distance between the vapor deposition mask 100 and the substrate to be vapor-deposited is very close, for example, may be 3 ⁇ m, the periphery of the scan driving circuit region is easily attached by larger particles.
  • the opening structure 121 is disposed in the shielding area 120, which can effectively prevent large particles from adhering to the periphery of the scanning driving circuit area, thereby solving the problem of poor appearance inspection such as yellowing or black spots in the surrounding area.
  • the opening structure 111 of each of the vapor deposition zones 110 may pass through the vapor deposition material, and the region of the organic light emitting diode display substrate to be vapor-deposited corresponding to the opening structure 111 may be evaporated.
  • the vapor deposited common layer may collectively cover a plurality of pixel electrodes, that is, may be formed together on a plurality of pixels.
  • a common layer may be disposed between the electrode and the light-emitting layer as a carrier transport layer applied to each pixel.
  • the common layer evaporated by each vapor deposition zone 110 corresponds to a common layer of the organic light emitting diode display substrate. Therefore, the vapor deposition mask 100 includes a plurality of vapor deposition zones 110 arranged in an array, that is, the steaming The plating mask 100 can simultaneously evaporate a plurality of substrates to be vapor-deposited.
  • the common layer may include at least one of a hole transport layer, an electron transport layer, a hole injection layer, an electron injection layer, a hole blocking layer, an electron blocking layer, and a cathode layer.
  • the hole injection layer includes a conductive polymer having a metal composite.
  • Hole injection layer can be packaged
  • the phthalocyanine compound of copper phthalocyanine, polyaniline/dodecylbenzenesulfonic acid, polyaniline/camphorsulfonic acid or polyaniline is used, but the hole injecting layer is not limited thereto.
  • the hole transport layer may include a carbazole derivative such as polyvinyl carbazole or an amine derivative having an aromatic condensed ring compound, etc., but the hole transport layer is not limited thereto.
  • the hole transport layer can reduce the energy level difference between the hole injection layer and the light-emitting layer to increase the hole mobility of the implanted electrode layer.
  • an electron transport layer is formed on the light-emitting layer, and a material such as a quinoline derivative may be included to increase electron mobility to achieve charge balance, but the electron transport layer is not limited thereto.
  • an electron injecting layer is formed on the electron transporting layer, and the electron injecting layer includes a material such as lithium fluoride, sodium chloride, cerium oxide, or the like, but the electron injecting layer is not limited thereto.
  • the cathode layer may be formed of a material having high conductivity and a low work function, and the material of the cathode layer may be made of lithium, magnesium, calcium, aluminum, silver, ruthenium or an alloy thereof, but the cathode material is not limited thereto.
  • the cathode layer may be a transmissive electrode layer or a reflective electrode layer.
  • the material of the cathode layer includes the above-described transparent conductive material.
  • the cathode layer is a reflective electrode layer, the cathode layer includes a metal reflective layer.
  • the vapor deposition zone 110 is not limited to vapor deposition of the above common layer, and may be used for vapor-depositing an increased light output film layer of an organic light emitting diode display substrate, etc., and embodiments of the present disclosure are not limited thereto.
  • the material of the shielding region 120 may include a resin material or a metal material.
  • the metal material may be selected from one or more of stainless steel, nickel, cobalt, nickel alloy, nickel cobalt alloy, and embodiments of the present disclosure are not limited thereto. .
  • the material of the occlusion region 120 has a withstand temperature of 200 ° C or more, so that during the high-temperature evaporation process, the evaporation temperature can be prevented from being excessively high and the service life of the occlusion region 120 can be reduced.
  • FIG. 2 is an exemplary schematic diagram of the aperture structure 121 on the occlusion region 120.
  • the actual aperture structure 121 is very small in size.
  • a circle around the each vapor deposition zone 110 in the occlusion area 120 of FIG. 2 is only an exemplary schematic view.
  • the embodiment is not limited thereto, and may be two turns or the like.
  • the size of each of the plurality of aperture structures 121 may be the same or different.
  • a plurality of opening structures 121 are disposed in an annular region having a width of 60 micrometers around each of the vapor deposition zones 110.
  • a portion of the region blocked by the occlusion region 120 has a luminescent layer that is not used for illuminating, so that the size of the opening structure 111 of the vapor deposition region 110 in the vapor deposition mask 100 is limited to a certain level or higher, and the luminescent layer can be used for illuminating.
  • the size level of the portion is smaller than the size level of the opening structure 111 in the evaporation mask 100. For example, there are two circles on the substrate to be evaporated which are blocked by the blocking area 120.
  • the light-emitting layer which is not used for light emission, the light-emitting layers which are not used for light emission are disposed in an annular region having a width of 60 ⁇ m around each of the vapor deposition regions 110, and the embodiment is not limited thereto.
  • a plurality of opening structures 121 are disposed in each of the regions adjacent to the vapor deposition zone 110, which can reduce the adhesion of larger-sized particles in the region, thereby reducing the coverage of the larger-sized particles on the edge of the vapor deposition zone 110 and affecting the vapor deposition. effect.
  • the plurality of opening structures 121 penetrate the shielding area 120, and the embodiment is not limited thereto.
  • the maximum size of each of the plurality of through-hole structures 121 taken along the cross-section parallel to the evaporation mask 100 is 30 ⁇ m. - 60 ⁇ m, this embodiment is not limited thereto. It should be noted that, according to actual needs, the maximum size of each of the plurality of aperture structures 121 taken along the cross section parallel to the evaporation mask 100 may be less than 30 micrometers.
  • the plurality of aperture structures 121 are rectangular in shape, and each of the aperture structures 121 has a maximum dimension of a cross section taken parallel to the evaporation mask 100, that is, a diagonal dimension of the rectangle is 30 microns - 60 microns.
  • a diagonal dimension of the rectangle is 30 microns - 60 microns.
  • embodiments of the present disclosure are not limited thereto, and may be a diamond or the like.
  • each of the plurality of aperture structures 121 along a cross section taken parallel to the evaporation mask 100 includes a circle or a polygon.
  • each of the aperture structures 121 has a maximum dimension of a cross section taken parallel to the evaporation mask 100, that is, a diameter of a circle. It should be noted that the shape of the opening structure 121 is not limited herein.
  • the maximum dimension of each of the plurality of aperture structures 121 taken along a cross section parallel to the evaporation mask 100 is 50 micrometers.
  • the spacing of the plurality of aperture structures 121 is 30 micrometers to 40 micrometers, which is not limited herein.
  • the embodiment provides an evaporation mask.
  • the occlusion region 120 in the evaporation mask 100 includes a plurality of first shielding strips 122 and a plurality of second shielding strips 123, and a plurality of first shielding strips.
  • the plurality of second shielding strips 123 extend in the second direction, and the first shielding strips 122 and the second shielding strips 123 are disposed to intersect each other.
  • the first direction here refers to the x direction in FIG. 3
  • the second direction refers to The direction in which the x direction is vertical, that is, the y direction. It should be noted that the first direction and the second direction may be interchanged, and the angle between the first direction and the second direction is not limited to 90 degrees as shown in FIG. 3.
  • first occlusion strip 122 and the second occlusion strip 123 intersect to define regions of the plurality of vapor deposition zones 110 such that each vapor deposition zone 110 is entirely an open structure 111.
  • the first shielding strip 122 and the second shielding strip 123 are provided with a plurality of opening structures 121.
  • FIG. 3 shows an exemplary schematic diagram of the opening structure 121.
  • the actual opening structure 121 is very small in size.
  • a plurality of first shielding strips 122 and a plurality of second shielding strips 123 are arranged in a circle around each of the vapor deposition zones 110.
  • the embodiment is not limited thereto. It can be two laps, etc.
  • the size of each of the plurality of aperture structures 121 may be the same or different.
  • a plurality of opening structures 121 are disposed in an annular region having a width of 60 micrometers around each of the vapor deposition zones 110.
  • a plurality of first shielding strips 122 and a plurality of second shielding strips 123 are vertically disposed to define a plurality of vapor deposition zones 110 having a rectangular shape, that is, each of the vapor deposition zones 110 has a rectangular opening as a whole.
  • Structure 111 For example, the above-described rectangle may include a square, and of course, embodiments of the present disclosure include but are not limited thereto.
  • a plurality of aperture structures 121 are disposed in the occlusion regions of the first occlusion strip 122 and the second occlusion strip 123 near each evaporation zone 110.
  • the first shielding strip 122 and the second shielding strip 123 are provided with a plurality of opening structures 121, and the opening structure 121 can be formed by etching. This embodiment is not limited herein. Since the area where the particles can adhere to the first shielding strip 122 and the second shielding strip 123 is reduced, the adhesion of the particles can be reduced, and on the other hand, it is difficult for a part of the larger particles to adhere to the first shielding strip 122 and the second shielding.
  • each of the first shielding strips 122 and each of the second shielding strips 123 are separately formed and welded together.
  • the shielding area of the vapor deposition mask is an integrally formed metal frame, and large particles generated by the evaporation source are likely to adhere to the shielding area. When a large particle attached to a part of the shielding area seriously affects the vapor deposition effect, the entire shielding area needs to be changed. Drop, wasting resources.
  • the plurality of first shielding strips 122 and the plurality of second shielding strips 123 in the embodiment may be separately formed.
  • the plurality of first shielding strips 122 and the plurality of second shielding strips 123 are vertically cross-welded to define a rectangular shape.
  • a plurality of vapor deposition zones 110 of a shape When the large particles attached to any of the shielding strips affect the evaporation effect, the shielding strip can be separately removed and the new shielding strip can be re-welded, and other shielding strips that do not affect the evaporation effect can be repeated. use. Therefore, most of the mask strips in the vapor deposition mask 100 can be reused, saving material.
  • the shielding strips around each of the vapor deposition zones 110 of the evaporation mask 100 shown in FIG. 3 may be separately formed, that is, the two first shielding strips 122 intersect with the two second shielding strips 123 and surround one vapor deposition.
  • Zone 110 is formed to form an evaporation mask unit. Any one of the first shielding strips 122 and the second shielding strips 123 may separate the vapor deposition zone 110 in the adjacent evaporation unit.
  • the shielding strips can be separately removed, and the new shielding strips can be re-welded, and other shielding strips that do not affect the vapor deposition effect can be re-welded. It can be reused. Therefore, most of the mask strips in the vapor deposition mask 100 can be reused, saving material.
  • the two first shielding strips 122 and the two second shielding strips 123 of the edge of the vapor deposition mask 100 shown in FIG. 3 may be integrally formed as the outermost frame of the vapor deposition mask 100. Both ends of the other plurality of first shielding strips 122 and the plurality of second shielding strips 123 may be respectively welded to the frame to form the shielding area 120.
  • each of the vapor deposition zones 110 may also include a polygon or a circle.
  • the shielding strip of the shielding region 120 can define and divide the vapor deposition region 110 into the same shape as the shape of the required vapor-deposited substrate pattern, for example, a polygon, a triangle, or a circle.
  • the vapor deposition mask 100 provided in this embodiment can be applied to the vapor deposition process of the vapor-deposited substrate pattern of different shapes only by re-welding the shielding strip, and the development cost of the vapor deposition mask 100 can be reduced. .
  • the material of the plurality of first shielding strips 122 and the plurality of second shielding strips 123 may include a resin material or a metal material, and the metal material may be selected from one or more of stainless steel, nickel, cobalt, nickel alloy, nickel-cobalt alloy.
  • the embodiment of the present disclosure is not limited thereto.
  • the present embodiment provides an evaporation method, as shown in FIG. 4, comprising: depositing a film layer having the same shape as that of the opening structure 111 on the substrate to be vapor-deposited 200 by using any of the above-described vapor deposition masks.
  • the film layer includes a common layer to be evaporated, and the embodiment includes but is not limited thereto.
  • the occlusion region 120 on the evaporation reticle is a schematic cross-sectional view in the A-A' direction as shown in FIG. 3, and the aperture structure 121 on the occlusion region 120 is not shown.
  • the vapor deposition source 300 is located on one side of the vapor deposition mask, and the vapor deposition substrate 200 is located on the other side of the vapor deposition mask with respect to the vapor deposition source 300.
  • the vapor deposition source 300 is located below the vapor deposition mask, and the substrate to be vapor-deposited 200 is positioned above the vapor deposition mask.
  • the shielding region 120 can block evaporation of the evaporation material in the region of the substrate 200 to be vapor-deposited in the shielding region 120, and the evaporation source 300 passes through the plurality of evaporation regions 110. Opening structure 111 to be evaporated
  • the substrate 200 is vapor-deposited with a common layer, for example, a metal film layer or an organic film layer.
  • a plurality of open-cell structures in the vapor deposition mask located on the shield region 120 are disposed in a 60-micrometer annular region surrounding each of the vapor deposition regions 110, and the embodiment is not limited thereto.
  • the plurality of opening structures 121 are disposed on the shielding area 120 to make it difficult for the large-sized particles to adhere to the shielding area 120 on the one hand; and the larger particles attached to the shielding area 120 on the other hand, in the subsequent common layer process of the evaporation.
  • the larger particles formed by the accumulation of other small particles fall by gravity. Therefore, the amount of large-sized particles to be attached can be reduced, and the evaporation effect can be improved.
  • the present disclosure describes an embodiment in which a common layer of an organic light emitting diode display substrate is deposited by a vapor deposition mask, but is not limited thereto, and may be another substrate or other layers.
  • the common layer evaporated by each evaporation zone 110 corresponds to a common layer of the organic light emitting diode display substrate. Therefore, the evaporation mask includes a plurality of vapor deposition zones 110 arranged in an array, that is, the evaporation The mask plate can simultaneously evaporate a plurality of substrates to be vapor-deposited.
  • the common layer depends on the material and luminescent properties of the luminescent layer.
  • the common layer may include at least one of a hole transport layer, an electron transport layer, a hole injection layer, an electron injection layer, a hole blocking layer, an electron blocking layer, and a cathode layer.
  • the hole injection layer includes a conductive polymer having a metal composite.
  • the hole injection layer may include a phthalocyanine compound of copper phthalocyanine, polyaniline/dodecylbenzenesulfonic acid, polyaniline/camphorsulfonic acid or polyaniline, etc., but the hole injection layer is not limited thereto.
  • the hole transport layer includes a carbazole derivative such as polyvinyl carbazole or an amine derivative having an aromatic condensed ring compound, etc., but the hole transport layer is not limited thereto.
  • an electron transport layer is formed on the light-emitting layer, including a quinoline derivative or the like to increase electron mobility to achieve charge balance.
  • the electron transport layer is not limited to this.
  • an electron injecting layer is formed on the electron transport layer.
  • the electron injecting layer includes a material such as lithium fluoride, sodium chloride, cerium oxide, or the like, but the electron injecting layer is not limited thereto.
  • the cathode layer may be formed of a material having high conductivity and a low work function, and the material of the cathode layer may be made of magnesium, calcium, aluminum, silver, ruthenium or an alloy thereof, but the cathode material is not limited thereto.
  • the vapor deposition zone 110 is not limited to vapor deposition of the above common layer, and may be used for vapor-depositing an increased light output film layer of an organic light emitting diode display substrate, etc., and the present disclosure is not limited thereto.
  • the vapor deposition mask is used to vapor-deposit the common layer, so that the display effect of the organic light-emitting diode display device can be improved, and the position of the display peripheral region can be ensured without abnormality, thereby ensuring the appearance inspection yield of the product.

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Abstract

一种蒸镀掩模板及蒸镀方法。该蒸镀掩模板(100)，包括遮挡区(120)和呈阵列排列的多个蒸镀区(110)。多个蒸镀区(110)中的每个蒸镀区(110)整体为开口结构(111)；遮挡区(120)围绕每个蒸镀区(110)设置，以分隔相邻的蒸镀区(110)，并且该遮挡区(120)设置有多个开孔结构(121)。采用该蒸镀掩模板，既可以改善显示器件的显示效果，又可以保证显示周边区域位置无异常，从而保证产品外观检良率。

Description

一种蒸镀掩模板及蒸镀方法 技术领域
本公开至少一实施例涉及一种蒸镀掩模板及蒸镀方法。
背景技术
有机发光二极管显示器是一种自发光的显示装置。有机发光二极管显示器因具有功耗低、显示亮度高、可视角度宽以及响应速度快等优点，越来越受到市场的欢迎。
一般有机发光二极管包括阴极、功能层和阳极。功能层包括空穴注入层、空穴传输层、空穴阻挡层、有机发光层、电子传输层、电子阻挡层以及电子注入层。功能层的成膜方法有很多种，其中，蒸镀法由于具有操作简单、膜厚容易控制以及易于实现掺杂等优点，广泛应用于形成发光层等功能膜层，即在真空环境下，将蒸镀材料加热使其蒸发，并沉积到目标基板上形成对应的膜层。
发明内容
本公开的至少一实施例提供一种蒸镀掩模板及蒸镀方法。采用该蒸镀掩模板，既可以改善显示器件的显示效果，又可以保证显示周边区域位置无异常，从而保证产品外观检良率。
本公开的至少一实施例提供一种蒸镀掩模板，包括遮挡区和呈阵列排列的多个蒸镀区。多个蒸镀区中的每个蒸镀区整体为开口结构；遮挡区围绕每个蒸镀区设置，以分隔相邻的蒸镀区，并且该遮挡区设置有多个开孔结构。
例如，在本公开一实施例提供的蒸镀掩模板中，多个开孔结构设置在遮挡区靠近每个蒸镀区的区域。
例如，在本公开一实施例提供的蒸镀掩模板中，多个开孔结构贯通遮挡区。
例如，在本公开一实施例提供的蒸镀掩模板中，多个开孔结构设置在围绕每个蒸镀区的宽度为60微米的环状区域内。
例如，在本公开一实施例提供的蒸镀掩模板中，多个开孔结构的每个沿平行于蒸镀掩模板截取的横截面的最大尺寸为30微米-60微米。
例如，在本公开一实施例提供的蒸镀掩模板中，多个开孔结构之间的间隔为30微米-40微米。
例如，在本公开一实施例提供的蒸镀掩模板中，多个开孔结构的每个沿平行于蒸镀掩模板截取的横截面的形状包括圆形或多边形。
例如，在本公开一实施例提供的蒸镀掩模板中，遮挡区包括多条第一遮挡条和多条第二遮挡条，多条第一遮挡条沿第一方向延伸，多条第二遮挡条沿第二方向延伸，且第一遮挡条以及第二遮挡条交叉设置。
例如，在本公开一实施例提供的蒸镀掩模板中，第一遮挡条以及第二遮挡条垂直交叉设置以限定具有矩形形状的多个蒸镀区。
例如，在本公开一实施例提供的蒸镀掩模板中，每个蒸镀区的形状包括多边形或圆形。
例如，在本公开一实施例提供的蒸镀掩模板中，蒸镀区的开口结构的形状与待蒸镀的公共层的形状相同。
例如，在本公开一实施例提供的蒸镀掩模板中，公共层包括空穴传输层、电子传输层、空穴注入层、电子注入层、空穴阻挡层、电子阻挡层和阴极层中的至少之一。
本公开的至少一实施例提供一种蒸镀方法，包括：利用上述蒸镀掩模板在基板上蒸镀形成形状与开口结构形状相同的膜层。
例如，在本公开一实施例提供的蒸镀方法中，膜层包括待蒸镀的公共层。
例如，在本公开一实施例提供的蒸镀方法中，蒸镀公共层包括蒸镀空穴传输层、电子传输层、空穴注入层、电子注入层、空穴阻挡层、电子阻挡层和阴极层中的至少之一。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例，而非对本公开的限制。
图1为一种蒸镀掩模板示意图；
图2为本公开一实施例提供的一种蒸镀掩模板示意图；
图3为本公开另一实施例提供的一种蒸镀掩模板示意图；
图4为本公开一实施例提供的蒸镀方法示意图。
附图标记：01-蒸镀掩模板；011-蒸镀区；012-遮挡区；100-蒸镀掩模板；110-蒸镀区；111-开口结构；120-遮挡区；121-开孔结构；122-第一遮挡条；123- 第二遮挡条；200-待蒸镀基板；300-蒸镀源。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现在该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
图1为一种蒸镀掩模板示意图，如图1所示，有机发光二极管显示器件在制备过程中会使用具有开口结构的蒸镀掩模板01蒸镀公共层，该开口结构的形状与待蒸镀的公共层形状相同，例如，尺寸相当。待蒸镀的公共层一般是膜层厚度较厚的层，包括空穴注入层、空穴传输层、空穴阻挡层、电子传输层、电子阻挡层以及电子注入层等。蒸镀掩模板01包括多个呈阵列排布的蒸镀区011，和围绕每个蒸镀区011的遮挡区012，遮挡区012用来分隔每个相邻的蒸镀区011。在对蒸镀区011对应的有机发光二极管显示基板蒸镀公共层的过程中，产生的一些直径尺寸较大的颗粒容易附着在遮挡区012上。如果这些较大颗粒的尺寸在100微米以上，例如颗粒直径尺寸在200微米左右，则会遮挡一部分蒸镀区011的边缘，会使蒸镀后的公共层的边缘出现不均匀现象，从而影响显示区周边，例如扫描驱动电路区的蒸镀效果，以及显示区的蒸镀效果。在面板检测时，点亮显示区后会出现不同程度的暗点或者黑点，因此影响显示区的外观检良率。另一方面，由于蒸镀掩模板01与待蒸镀基板之间距离非常近，例如可以是3微米，附着蒸镀区011边缘遮挡区012上的较大颗粒可能进一步 附着在了蒸镀基板上，影响显示区周边，例如扫描驱动电路区的蒸镀效果，出现发黄或者黑点的现象，因而影响显示区周边的外观检良率。此外，在封装时，一部分尺寸较大的颗粒附着在基板上会导致盖板玻璃贴合不均匀以及产生漏气等现象。
本公开至少一个实施例提供一种蒸镀掩模板，包括遮挡区和呈阵列排列的多个蒸镀区。多个蒸镀区中的每个蒸镀区整体为开口结构；遮挡区围绕每个蒸镀区设置，以分隔相邻的蒸镀区，并且该遮挡区设置有多个开孔结构。采用该蒸镀掩模板，既可以改善显示器件的显示效果，又可以保证显示周边区域位置无异常，从而保证产品外观检良率。
本公开的至少一个实施例提供一种蒸镀方法，包括利用上述蒸镀掩模板在基板上蒸镀形成形状与开口结构形状相同的膜层。在该蒸镀方法中采用上述蒸镀掩模板依次蒸镀膜层，既可以改善显示器件的显示效果，又可以保证显示周边区域位置无异常，从而保证产品外观检良率。
以下通过几个实施例予以说明。
实施例一
本实施例提供一种蒸镀掩模板，如图2所示，蒸镀掩模板100，包括遮挡区120和呈阵列排列的多个蒸镀区110。多个蒸镀区110中的每个蒸镀区110整体为开口结构111；遮挡区120围绕每个蒸镀区110设置，以分隔相邻的蒸镀区110，并且，遮挡区120设置有多个开孔结构121。开孔结构121可通过刻蚀形成，在此不做限制。如图2示出的遮挡区120围绕每个蒸镀区110设置，即对于每个蒸镀掩模板单元，包括一个具有开口结构111的蒸镀区110和围绕蒸镀区110四周的遮挡区120，其中的遮挡区120可以分隔相邻的蒸镀掩模板单元中的蒸镀区110。
本实施例中的遮挡区120可阻挡蒸镀材料在设置遮挡区120的基板区域的蒸镀。具有开口结构111的蒸镀区110可以透过蒸镀材料，对待蒸镀的基板，例如有机发光二极管显示基板与蒸镀区110对应的区域进行蒸镀。需要说明的是，本实施例中的蒸镀区110主要用于蒸镀有机发光二极管显示基板中的公共层部分，以此提高发光效率。一般在蒸镀公共层的过程中，由于热冲击作用，蒸镀源产生的直径较大的颗粒容易附着在遮挡区部分，随着蒸镀源依次蒸镀有机发光二极管显示基板中的公共层，附着在遮挡区部分的颗粒会继续积聚变大，以至于影响蒸镀效果。本实施例采用在遮挡区120设置开孔结构121，减 少了大颗粒可附着在遮挡区120上的面积，可以有效减少颗粒在遮挡区120上的附着力，从而减少大颗粒的附着量，提高蒸镀效果。需要说明的是，本实施例以蒸镀掩模板100蒸镀有机发光二极管显示基板为例进行描述，但并不限于此，还可以是其他基板。
例如，在蒸镀第一层公共层时，一部分较大颗粒会由于遮挡区120上存在开孔结构121，减小了遮挡区120上可以附着的面积，难以附着在遮挡区120上；另一部分附着在遮挡区120上的较大颗粒会在蒸镀后续公共层过程中聚集其他小颗粒，形成更大的颗粒。新形成的大颗粒重力增加，但在遮挡区120上的附着面积不足以维持其继续附着，从而会掉落，以达到减少大尺寸颗粒附着量的目的。因此，本实施例中在遮挡区120设置开孔结构121，能够有效防止后续蒸镀过程中颗粒集聚现象的产生，防止颗粒直径持续增大，从而提高显示区蒸镀效果，改善显示区的均匀性，保证显示周边区域无异常。
例如，如图2所示，蒸镀区110中的虚线框表示每个蒸镀区110整体为开口结构111，开口结构111的形状与待蒸镀的公共层的形状相同，例如，尺寸相当。需要说明的是，开口结构111对应的待蒸镀的基板除了显示区，还包括显示周边区域，例如扫描驱动电路区。由于蒸镀掩模板100与待蒸镀基板之间距离非常近，例如，可以是3微米，扫描驱动电路区的周边容易被较大的颗粒附着。因此，本实施例中在遮挡区120设置开孔结构121，可以有效避免较大颗粒附着在扫描驱动电路区的周边，从而解决显示周边区域产生发黄或黑点等外观检不良的问题。
例如，每个蒸镀区110的开口结构111可以透过蒸镀材料，对待蒸镀的有机发光二极管显示基板与开口结构111对应的区域进行蒸镀。例如，蒸镀的公共层可以共同覆盖多个像素电极，即，可以共同形成在多个像素上。例如，公共层可以设置在电极与发光层之间，作为载流子传输层应用于各像素。需要说明的是，每个蒸镀区110蒸镀的公共层对应一个有机发光二极管显示基板的公共层，因此，该蒸镀掩模板100包括呈阵列排列的多个蒸镀区110，即该蒸镀掩模板100可以同时蒸镀多个待蒸镀基板。
例如，蒸镀的公共层中的至少一层取决于发光层的材料和发光性质。例如，公共层可以包括空穴传输层、电子传输层、空穴注入层、电子注入层、空穴阻挡层、电子阻挡层和阴极层中的至少之一。
例如，空穴注入层包括具有金属复合物的导电聚合物。空穴注入层可以包 括铜酞菁的酞菁化合物、聚苯胺/十二烷基苯磺酸、聚苯胺/樟脑磺酸或聚苯胺等，但空穴注入层不限于此。
例如，空穴传输层可以包括聚乙烯咔唑等的咔唑衍生物、或者具有芳香缩合环化合物的胺衍生物等，但空穴传输层不限于此。例如，空穴传输层可以减小空穴注入层和发光层间的能级差，以提高注入电极层的空穴迁移率。
例如，电子传输层形成在发光层上，可以包括喹啉衍生物等材料以提高电子迁移率，以实现电荷平衡，但是电子传输层不限于此。
例如，电子注入层形成在电子传输层上，电子注入层包括诸如氟化锂、氯化钠、氧化钡等的材料，但是电子注入层不限于此。
例如，阴极层可由高导电性和低功函数的材料形成，阴极层的材料可以由锂、镁、钙、铝、银、钡或其合金制成，但是阴极材料不限于此。例如，阴极层可以是透射电极层或反射电极层。当阴极层是透射电极层时，阴极层的材料包括上述的透明导电材料。当阴极层是反射电极层时，阴极层包括金属反射层。
例如，蒸镀区110不限于蒸镀上述公共层，还可以用于蒸镀有机发光二极管显示基板的增加光输出膜层等，本公开的实施例不限于此。
例如，遮挡区120的材料可以包括树脂材料或金属材料，例如，金属材料可选自不锈钢、镍、钴、镍合金、镍钴合金中的一种或多种，本公开的实施例不限于此。
例如，遮挡区120的材料的耐受温度大于等于200℃，从而在高温蒸镀过程中，能够避免蒸镀温度过高而减少遮挡区120的使用寿命。
如图2所示，多个开孔结构121设置在遮挡区120靠近每个蒸镀区110的区域。需要说明的是，图2是遮挡区120上的开孔结构121的示范性示意图，实际的开孔结构121尺寸非常小。例如，如图2中遮挡区120上的开孔结构121排列在每个蒸镀区110周围的一圈只是示范性示意图，本实施例不限于此，还可以是两圈等。例如，多个开孔结构121中的每个开孔结构121的尺寸可以相同也可以不同。
例如，多个开孔结构121设置在围绕每个蒸镀区110的宽度为60微米的环状区域内。例如，遮挡区120遮挡的区域存在一部分不用于发光的发光层，使蒸镀掩模板100中蒸镀区110的开口结构111的尺寸被限制在一定的级别以上，可以使发光层用于发光的部分的尺寸级别小于蒸镀掩模板100中开口结构111的尺寸级别。例如，在待蒸镀的基板上被遮挡区120遮挡的区域存在两圈 不用于发光的发光层，这两圈不用于发光的发光层设置在围绕每个蒸镀区110的宽度为60微米的环状区域内，本实施例不限于此。本实施例在每个靠近蒸镀区110的区域设置多个开孔结构121，可以减少较大尺寸颗粒在此区域的附着，从而减少较大尺寸颗粒覆盖在蒸镀区110边缘，影响蒸镀效果。进一步，还可以防止大颗粒在此区域聚集，避免蒸镀不均匀，出现不同程度的暗点等，从而提高显示区蒸镀效果。此外，通过减少较大尺寸颗粒在此区域的附着，可以降低颗粒附着在扫描驱动电路区的周边以及玻璃胶层印刷区的几率，避免出现不同程度的黑点，并且防止大颗粒导致的贴合不均匀以及漏气现象的产生等。
例如，多个开孔结构121贯通遮挡区120，本实施例不限于此。
例如，考虑到避免蒸镀材料对遮挡区120遮挡的非显示区域基板的影响，多个贯通的开孔结构121的每个沿平行于蒸镀掩模板100截取的横截面的最大尺寸为30微米-60微米，本实施例不限于此。需要说明的是，根据实际需要，多个开孔结构121的每个沿平行于蒸镀掩模板100截取的横截面的最大尺寸还可以小于30微米。
例如，如图2所示，多个开孔结构121的形状为矩形，开孔结构121的每个沿平行于蒸镀掩模板100截取的横截面的最大尺寸，即矩形的对角线尺寸为30微米-60微米。但本公开的实施例不限于此，还可以是菱形等。
例如，多个开孔结构121的每个沿平行于蒸镀掩模板100截取的横截面的形状包括圆形或多边形。例如，当开孔结构121的形状为圆形时，开孔结构121的每个沿平行于蒸镀掩模板100截取的横截面的最大尺寸，即为圆形的直径。需要说明的是，开孔结构121的形状在此并不做限定。
例如，多个开孔结构121的每个沿平行于蒸镀掩模板100截取的横截面的最大尺寸为50微米。
例如，多个开孔结构121的间隔为30微米-40微米，本实施例在此并不做限定。
实施例二
本实施例提供一种蒸镀掩模板，如图3所示，蒸镀掩模板100中的遮挡区120包括多条第一遮挡条122和多条第二遮挡条123，多条第一遮挡条122沿第一方向延伸，多条第二遮挡条123沿第二方向延伸，第一遮挡条122以及第二遮挡条123交叉设置。这里的第一方向指如图3中的x方向，第二方向指与 x方向垂直的方向，即y方向。需要说明的是，第一方向与第二方向可以互换，并且第一方向与第二方向之间的夹角不限于图3中所示的90度。例如，第一遮挡条122和第二遮挡条123交叉限制多个蒸镀区110的区域，使每个蒸镀区110整体为开口结构111。第一遮挡条122和第二遮挡条123上设置有多个开孔结构121，需要说明的是，图3示出了开孔结构121的示范性示意图，实际的开孔结构121尺寸非常小。如图3中多条第一遮挡条122和多条第二遮挡条123上的开孔结构121排列在每个蒸镀区110周围的一圈只是示范性示意图，本实施例不限于此，还可以是两圈等。例如，多个开孔结构121中的每个开孔结构121的尺寸可以相同也可以不同。例如，多个开孔结构121设置在围绕每个蒸镀区110的宽度为60微米的环状区域内。
如图3所示，例如，多条第一遮挡条122以及多条第二遮挡条123垂直交叉设置以限定多个具有矩形形状的蒸镀区110，即每个蒸镀区110整体为矩形开口结构111。例如，上述的矩形可以包括正方形，当然，本公开实施例包括但不限于此。
例如，多个开孔结构121设置在第一遮挡条122和第二遮挡条123靠近每个蒸镀区110周围的遮挡区。例如，本实施例中在第一遮挡条122和第二遮挡条123设置多个开孔结构121，开孔结构121可通过刻蚀形成，本实施例在此并不做限定。由于减少了颗粒可附着在第一遮挡条122和第二遮挡条123上的面积，可以减小颗粒的附着力，一方面使一部分较大的颗粒难以附着在第一遮挡条122和第二遮挡条123上；另一方面，附着在第一遮挡条122和第二遮挡条123上的一部分较大颗粒，在后续蒸镀过程中，颗粒集聚后产生的更大颗粒容易掉落在待蒸镀基板之外，从而提高显示区蒸镀效果，改善显示区域的均匀性，保证显示周边区域无异常。
如图3所示，例如，每条第一遮挡条122以及每条第二遮挡条123是单独形成并焊接在一起。一般蒸镀掩模板的遮挡区是整体制成的金属框架，蒸镀源产生的大颗粒容易附着在遮挡区，当一部分遮挡区附着的大颗粒严重影响蒸镀效果时，需要将遮挡区整体换掉，浪费资源。本实施例中的多条第一遮挡条122和多条第二遮挡条123可以分别单独形成，例如，多条第一遮挡条122和多条第二遮挡条123通过垂直交叉焊接以限定具有矩形形状的多个蒸镀区110。当其中任一条遮挡条上附着的大颗粒影响蒸镀效果时，可以单独将该遮挡条拆下来，并重新焊接新的遮挡条，而其他没有影响蒸镀效果的遮挡条就可以重复利 用。因而蒸镀掩模板100中大部分遮挡条可以重复利用，节省材料。
例如，图3示出的蒸镀掩模板100的每个蒸镀区110四周的遮挡条可以单独焊接形成，即两条第一遮挡条122与两条第二遮挡条123交叉并围绕一个蒸镀区110以形成一个蒸镀掩模板单元。其中的任一条第一遮挡条122与第二遮挡条123可以分隔相邻蒸镀单元中的蒸镀区110。当每个蒸镀区110四周的任何一条遮挡条附着的大颗粒影响蒸镀效果时，可以单独将该遮挡条拆下来，并重新焊接新的遮挡条，而其他没有影响蒸镀效果的遮挡条就可以重复利用。因而蒸镀掩模板100中大部分遮挡条可以重复利用，节省材料。
例如，图3示出的蒸镀掩模板100的边缘的两条第一遮挡条122和两条第二遮挡条123可以作为整体形成，以作为蒸镀掩模板100最外侧的框架。其他的多条第一遮挡条122和多条第二遮挡条123的两端可以分别焊接在框架上，以形成遮挡区120。
例如，每个蒸镀区110的形状还可以包括多边形或圆形。根据实际需要的蒸镀基板图案的形状，遮挡区120的遮挡条可将蒸镀区110限定并划分为与所需要的蒸镀基板图案的形状相同的形状，例如，多边形、三角形或圆形等。在这种情况下，本实施例提供的蒸镀掩模板100只需重新焊接遮挡条，便可应用于不同形状的蒸镀基板图案的蒸镀工艺中，可减少蒸镀掩模板100的开发成本。
例如，多条第一遮挡条122和多条第二遮挡条123的材料可包括树脂材料或金属材料，金属材料可选自不锈钢、镍、钴、镍合金、镍钴合金中的一种或多种，本公开的实施例不限于此。
实施例三
本实施例提供一种蒸镀方法，如图4所示，包括：利用上述任一种蒸镀掩模板在待蒸镀基板200上蒸镀形成形状与开口结构111形状相同的膜层。例如，膜层包括待蒸镀的公共层，本实施例包括但不限于此。蒸镀掩模板上的遮挡区120是如图3所示的沿A-A'方向的截面示意图，遮挡区120上的开孔结构121没有示出。
例如，蒸镀源300位于蒸镀掩模板的一侧，待蒸镀基板200位于蒸镀掩模板相对于蒸镀源300的另一侧。例如，如图4所示，蒸镀源300位于蒸镀掩模板的下方，待蒸镀基板200位于蒸镀掩模板的上方。当蒸镀源300对待蒸镀基板200蒸镀材料时，遮挡区120可阻挡蒸镀材料在设置遮挡区120的待蒸镀基板200区域的蒸镀，蒸镀源300通过多个蒸镀区110的开口结构111向待蒸镀 基板200蒸镀公共层，例如，金属膜层或有机膜层等。
例如，蒸镀掩膜板中位于遮挡区120上的多个开孔结构设置在围绕每个蒸镀区110的60微米的环状区域内，本实施例不限于此。遮挡区120上设置多个开孔结构121一方面可以使大尺寸颗粒难以附着在遮挡区120上；另一方面，使一部分附着在遮挡区120上的较大颗粒，在蒸镀后续公共层过程中聚集其他小颗粒形成的更大的颗粒因重力作用掉落。因此，可以减少大尺寸颗粒附着量，改善蒸镀效果。
需要说明的是，本公开以蒸镀掩模板蒸镀有机发光二极管显示基板的公共层为例进行描述，但并不限于此，还可以是其他基板或其他层。需要说明的是，每个蒸镀区110蒸镀的公共层对应一个有机发光二极管显示基板的公共层，因此，该蒸镀掩模板包括多个呈阵列排列的蒸镀区110，即该蒸镀掩模板可以同时蒸镀多个待蒸镀基板。
例如，公共层中的至少一层取决于发光层的材料和发光性质。例如，公共层可以包括空穴传输层、电子传输层、空穴注入层、电子注入层、空穴阻挡层、电子阻挡层和阴极层中的至少之一。
例如，空穴注入层包括具有金属复合物的导电聚合物。空穴注入层可以包括铜酞菁的酞菁化合物、聚苯胺/十二烷基苯磺酸、聚苯胺/樟脑磺酸或聚苯胺等，但空穴注入层不限于此。
例如，空穴传输层包括聚乙烯咔唑等的咔唑衍生物、或者具有芳香缩合环化合物的胺衍生物等，但空穴传输层不限于此。
例如，电子传输层形成在发光层上，包括喹啉衍生物等，以提高电子迁移率，以实现电荷平衡。但是电子传输层不限于此。
例如，电子注入层形成在电子传输层上。电子注入层包括诸如氟化锂、氯化钠、氧化钡等的材料，但是电子注入层不限于此。
例如，阴极层可由高导电性和低功函数的材料形成，阴极层的材料可以由镁、钙、铝、银、钡或其合金制成，但是阴极材料不限于此。
例如，蒸镀区110不限于蒸镀上述公共层，还可以用于蒸镀有机发光二极管显示基板的增加光输出膜层等，本公开不限于此。
在该蒸镀方法中采用上述蒸镀掩模板蒸镀公共层，可以改善有机发光二极管显示器件的显示效果，保证显示周边区域位置无异常，从而保证产品外观检良率。
有以下几点需要说明：
(1)除非另作定义，本公开实施例以及附图中，同一标号代表同一含义。
(2)本公开实施例附图中，只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(3)为了清晰起见，在用于描述本公开的实施例的附图中，层或区域的厚度被放大。可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。
本申请要求于2016年11月30日递交的中国专利申请第201611075496.4号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (15)

  1. 一种蒸镀掩模板，包括：
    呈阵列排列的多个蒸镀区，所述多个蒸镀区中的每个所述蒸镀区整体为开口结构；
    遮挡区，所述遮挡区围绕每个所述蒸镀区设置，以分隔相邻的所述蒸镀区，
    其中，所述遮挡区设置有多个开孔结构。
  2. 根据权利要求1所述的蒸镀掩模板，其中，所述多个开孔结构设置在所述遮挡区靠近每个所述蒸镀区的区域。
  3. 根据权利要求1或2所述的蒸镀掩模板，其中，所述多个开孔结构贯通所述遮挡区。
  4. 根据权利要求1-3任一项所述的蒸镀掩模板，其中，所述多个开孔结构设置在围绕每个所述蒸镀区的宽度为60微米的环状区域内。
  5. 根据权利要求1-4任一项所述的蒸镀掩模板，其中，所述多个开孔结构的每个沿平行于所述蒸镀掩模板截取的横截面的最大尺寸为30微米-60微米。
  6. 根据权利要求1-5任一项所述的蒸镀掩模板，其中，所述多个开孔结构之间的间隔为30微米-40微米。
  7. 根据权利要求1-6任一项所述的蒸镀掩模板，其中，所述多个开孔结构的每个沿平行于所述蒸镀掩模板截取的横截面的形状包括圆形或多边形。
  8. 根据权利要求1-7任一项所述的蒸镀掩模板，其中，所述遮挡区包括多条第一遮挡条和多条第二遮挡条，所述多条第一遮挡条沿第一方向延伸，所述多条第二遮挡条沿第二方向延伸，且所述第一遮挡条以及所述第二遮挡条交叉设置。
  9. 根据权利要求8所述的蒸镀掩模板，其中，所述第一遮挡条以及所述第二遮挡条垂直交叉设置以限定具有矩形形状的所述多个蒸镀区。
  10. 根据权利要求1-9任一项所述的蒸镀掩模板，其中，每个所述蒸镀区的形状包括多边形或圆形。
  11. 根据权利要求1-10任一项所述的蒸镀掩模板，其中，所述蒸镀区的所述开口结构的形状与待蒸镀的公共层的形状相同。
  12. 根据权利要求11所述的蒸镀掩模板，其中，所述公共层包括空穴传 输层、电子传输层、空穴注入层、电子注入层、空穴阻挡层、电子阻挡层和阴极层中的至少之一。
  13. 一种蒸镀方法，包括：利用权利要求1-12中任一项所述的蒸镀掩模板在基板上蒸镀形成形状与所述开口结构形状相同的膜层。
  14. 根据权利要求13所述的蒸镀方法，其中，所述膜层包括待蒸镀的公共层。
  15. 根据权利要求14所述的蒸镀方法，其中，蒸镀所述公共层包括蒸镀空穴传输层、电子传输层、空穴注入层、电子注入层、空穴阻挡层、电子阻挡层和阴极层中的至少之一。
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