WO2018094815A1 - Oled器件的制作方法及oled器件 - Google Patents

Oled器件的制作方法及oled器件 Download PDF

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WO2018094815A1
WO2018094815A1 PCT/CN2016/112944 CN2016112944W WO2018094815A1 WO 2018094815 A1 WO2018094815 A1 WO 2018094815A1 CN 2016112944 W CN2016112944 W CN 2016112944W WO 2018094815 A1 WO2018094815 A1 WO 2018094815A1
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layer
electronic
substrate
oled device
forming
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French (fr)
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徐超
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Wuhan China Star Optoelectronics Technology Co Ltd
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Wuhan China Star Optoelectronics Technology Co Ltd
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Priority to US15/329,490 priority Critical patent/US20180342678A1/en
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/02—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by a sequence of laminating steps, e.g. by adding new layers at consecutive laminating stations
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12—Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
    • B32B37/1284—Application of adhesive
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/828—Transparent cathodes, e.g. comprising thin metal layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/127—Active-matrix OLED [AMOLED] displays comprising two substrates, e.g. display comprising OLED array and TFT driving circuitry on different substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/50—Forming devices by joining two substrates together, e.g. lamination techniques
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B32—LAYERED PRODUCTS
    • B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00—Electrical equipment
    • B32B2457/20—Displays, e.g. liquid crystal displays, plasma displays
    • B32B2457/206—Organic displays, e.g. OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/10—Transparent electrodes, e.g. using graphene
    • H10K2102/101—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO]
    • H10K2102/103—Transparent electrodes, e.g. using graphene comprising transparent conductive oxides [TCO] comprising indium oxides, e.g. ITO
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the present invention relates to the field of display, and in particular to a method for fabricating an OLED device and an OLED device.
  • OLED displays have many advantages such as high brightness, fast response, low power consumption, and flexibility, and are widely recognized as the focus of next-generation display technology.
  • the biggest advantage of OLEDs compared to TFT-LCDs is the ability to produce large, ultra-thin, flexible and transparent display devices.
  • the preparation of a transparent OLED display requires solving the problem of a transparent electrode, which requires both high conductivity and high transmittance.
  • the transparent electrode material currently used is mainly ITO. Since the vapor deposited organic film is thin, ITO is usually prepared by physical vapor deposition sputtering, and the excessively high sputtering power causes damage to the organic light-emitting layer, and the sputtering power is too high. Low filming time is too long, reducing production efficiency.
  • the invention provides a method for fabricating an OLED device, which comprises the following steps:
  • TFT array layer Forming a TFT array layer, a cathode electrode layer, an electron transport layer, a light emitting layer, and a hole transport layer on the first substrate;
  • the first electronic glue layer and the second electronic glue layer are bonded and connected.
  • the step of attaching and bonding the first electronic adhesive layer and the second electronic adhesive layer comprises:
  • the first substrate and the second substrate are positively pressed under vacuum conditions, so that the first electronic adhesive layer and the second electronic adhesive layer are bonded and bonded.
  • the step of sequentially forming the TFT array layer, the cathode electrode layer, the electron transport layer, the light emitting layer and the hole transport layer on the first substrate comprises:
  • a hole transport layer is provided on the light emitting layer.
  • the step of sequentially forming the anode electrode layer and the hole injection layer on the second substrate comprises:
  • a hole injecting layer is provided on the anode electrode layer.
  • the first electronic adhesive layer and the second electronic adhesive layer both use sorbitol.
  • the step of forming the first electronic glue layer on the hole transport layer comprises:
  • a first electronic glue layer is formed on the hole transport layer by a vapor deposition or spin coating process.
  • the step of forming a second electronic glue layer on the hole injection layer comprises:
  • a second electronic glue layer is formed on the hole injection layer by a vapor deposition or spin coating process.
  • the present invention also provides a method of fabricating an OLED device, comprising the steps of:
  • TFT array layer Forming a TFT array layer, a cathode electrode layer, an electron transport layer, a light emitting layer, and a hole transport layer on the first substrate;
  • the first substrate and the second substrate are positively pressed under vacuum conditions, so that the first electronic adhesive layer and the second electronic adhesive layer are bonded and bonded;
  • the first electronic rubber layer and the second electronic rubber layer all adopt sorbitol.
  • the present invention also provides an OLED device comprising:
  • first substrate and a TFT array layer a cathode electrode layer, an electron transport layer, a light-emitting layer, a hole transport layer and a first electronic glue layer which are sequentially disposed on the first substrate;
  • the first electronic glue layer and the second electronic glue layer are bonded and bonded.
  • the first electronic adhesive layer and the second electronic adhesive layer both use sorbitol.
  • both the anode electrode layer and the cathode electrode layer are made of indium tin oxide.
  • a TFT array layer, a cathode electrode layer, an electron transport layer, a light emitting layer and a hole transport layer are sequentially formed on the first substrate; and a first electronic glue layer is formed on the hole transport layer; Forming an anode electrode layer and a hole injection layer on the second substrate; forming a second electronic glue layer on the hole injection layer; and bonding the first electronic glue layer and the second electronic glue layer; thereby implementing the OLED device
  • the OLED device is separately fabricated by dividing the OLED device into two parts, and then bonded with an electronic adhesive layer, which has the beneficial effect of accelerating the generation efficiency, and, due to the production process, the anode electrode
  • the layer is separately formed from the luminescent layer, and the destruction of the luminescent layer by sputtering during the formation of the anode electrode layer by physical vapor deposition can be avoided, and the product yield is improved.
  • FIG. 1 is a flow chart of a method of fabricating an OLED device in accordance with a preferred embodiment of the present invention.
  • FIG. 2 is a partial structural schematic view of an OLED device in the embodiment shown in FIG. 1 of the present invention.
  • FIG. 3 is another partial structural diagram of the OLED device of the embodiment of FIG. 1 of the present invention.
  • FIG. 4 is a schematic structural view of an OLED device in a preferred embodiment of the present invention.
  • a method for fabricating the OLED device includes the following steps:
  • step S101 is performed, the step S102 is performed again.
  • step S103 is performed, the step S104 is performed, and the step S101 and the step S103 may be performed synchronously, or may be performed in any order.
  • step S101 it includes the following sub-steps:
  • a TFT array layer is disposed on the first substrate; in this step, the first substrate 11 may be a flexible substrate, and the TFT array layer 12 includes a plurality of thin film transistors.
  • a cathode electrode layer is disposed on the TFT array layer; in this step, a cathode electrode layer 13 is deposited on the TFT array layer 12 by physical weather precipitation, wherein the cathode electrode layer 13 is made of a transparent material, for example, N Type oxide semiconductor - indium tin oxide ITO.
  • an electron transport layer 14 is provided on the cathode electrode layer 13; in this step, the electron transport layer 14 may be formed on the cathode electrode layer 13 by vapor deposition, spin coating or the like.
  • a light-emitting layer is disposed on the electron transport layer; in this step, the light-emitting layer 15 may be formed on the electron transport layer 14 by vapor deposition, spin coating or the like.
  • the light emitting layer 15 is an organic light emitting layer.
  • a hole transport layer is disposed on the light emitting layer.
  • the hole transport layer 16 can be formed on the light-emitting layer 15 by vapor deposition, spin coating or the like.
  • the first electronic sub-layer 17 may be formed on the hole transport layer 16 by vapor deposition, spin coating or the like.
  • the first electronic glue layer 17 has high transparency and high carrier mobility, and the first electronic rubber layer 17 can adopt sorbitol.
  • this step S103 it includes the following sub-steps:
  • a barrier layer is disposed on the second substrate; in this step, the second substrate 22 may be a flexible substrate.
  • the barrier layer 21 is formed by depositing an inorganic material having a good water-oxygen barrier property, and may be, for example, SiNx, SiO2 or the like.
  • an anode electrode layer is disposed on the barrier layer; in this step, an anode electrode layer 20 is deposited on the barrier layer 21 by physical weather precipitation, wherein the anode electrode layer 20 is made of a transparent material, for example, by N-type oxidation.
  • Semiconductor - indium tin oxide ITO is disposed on the barrier layer; in this step, an anode electrode layer 20 is deposited on the barrier layer 21 by physical weather precipitation, wherein the anode electrode layer 20 is made of a transparent material, for example, by N-type oxidation.
  • a hole injection layer is provided on the anode electrode layer.
  • the hole injection layer 19 can be formed by vapor deposition, spin coating, or the like.
  • a second electronic rubber layer may be formed on the hole injection layer by vapor deposition, spin coating or the like.
  • the second electronic glue layer 18 has high transparency and high carrier mobility, and the second electronic rubber layer 18 can adopt sorbitol.
  • the first substrate 11 and the second substrate 18 are positively pressed under vacuum conditions, so that the first electronic adhesive layer 17 and the second electronic adhesive layer 18 are bonded and bonded; Then, baking is performed for 1 to 5 minutes at a temperature higher than the melting point of the first electronic adhesive layer 17 and the second electronic adhesive layer 18, and the OLED device can be completed after cooling.
  • a TFT array layer, a cathode electrode layer, an electron transport layer, a light emitting layer and a hole transport layer are sequentially formed on the first substrate; and a first electronic glue layer is formed on the hole transport layer; Forming an anode electrode layer and a hole injection layer on the second substrate; forming a second electronic glue layer on the hole injection layer; and bonding the first electronic glue layer and the second electronic glue layer; thereby implementing the OLED device
  • the OLED device is separately fabricated by dividing the OLED device into two parts, and then bonded with an electronic adhesive layer, which has the beneficial effect of accelerating the generation efficiency, and, due to the production process, the anode electrode
  • the layer is separately formed from the luminescent layer, and the destruction of the luminescent layer by sputtering during the formation of the anode electrode layer by physical vapor deposition can be avoided, and the product yield is improved.
  • FIG. 4 is a structural diagram of an OLED device according to a preferred embodiment of the present invention.
  • the OLED device includes a first substrate 11, a TFT array layer 12, a cathode electrode layer 13, an electron transport layer 14, and a light emitting layer 15.
  • the hole transport layer 16 the first electronic glue layer 17, and the second substrate 22.
  • the TFT array layer 12, the cathode electrode layer 13, the electron transport layer 14, the light-emitting layer 15, the hole transport layer 16, and the first electronic glue layer 17 are sequentially disposed on the first substrate 11.
  • the TFT array 12 is deposited on the first substrate 11, wherein the TFT array layer is a pixel electrode layer; the cathode electrode layer 13 is formed on the TFT array layer 12 by physical vapor deposition; the electron transport layer 14 Formed on the cathode electrode layer 13 by spin coating or evaporation; the light-emitting layer 15 is an organic light-emitting layer formed on the electron transport layer 16 by spin coating or evaporation; the hole transport layer 16 is spin-coated or The vapor deposition layer is formed on the light-emitting layer 15.
  • the barrier layer 21, the anode electrode layer 20, the hole injection layer 19, and the second electronic glue layer 18 are sequentially disposed on the second substrate 22.
  • the first electronic glue layer 17 and the second electronic glue layer 18 are bonded and bonded.
  • the first electronic glue layer 17 and the second electronic glue layer 18 all adopt sorbitol.
  • Indium tin oxide is used for both the anode electrode layer 20 and the cathode electrode layer 13.
  • the anode electrode layer and the light-emitting layer are separately formed, which can avoid the destruction of the light-emitting layer by sputtering when the anode electrode layer is formed by physical vapor deposition, thereby improving the product yield.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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Abstract

一种OLED器件的制作方法及OLED器件，方法包括以下步骤：在第一基板（11）上依次形成TFT阵列层（12）、阴极电极层（13）、电子传输层（14）、发光层（15）以及空穴传输层（16）；在空穴传输层上形成第一电子胶层（17）；在第二基板（22）上依次形成阳极电极层（20）以及空穴注入层（19）；在空穴注入层上形成第二电子胶层（18）；将第一电子胶层与第二电子胶层贴合并连接。

Description

OLED器件的制作方法及OLED器件 技术领域
本发明涉及显示领域，特别是涉及一种OLED器件的制作方法及OLED器件。
 背景技术
OLED显示器具有亮度高、响应快、能耗低、可弯曲等许多优点，被广泛认可为下一代显示技术的焦点。 OLED与TFT-LCD相比，最大的优势就是可制备大尺寸、超薄、柔性和透明显示器件。
制备透明OLED显示器需要解决透明电极的问题，透明电极材料既要求有较高的导电性，还要有较高的透过率。目前使用的透明电极材料主要是ITO，由于蒸镀的有机薄膜较薄，而ITO通常采用物理气相沉淀法溅射制备，溅射的功率过高会对有机发光层造成破坏，溅射的功率太低则成膜时间太长，降低了生产效率。
因此，现有技术存在缺陷，急需改进。
 技术问题
本发明的目的在于提供一种OLED器件的制作方法及OLED器件。
 技术解决方案
为解决上述问题，本发明提供的技术方案如下：
本发明提供一种OLED器件的制作方法，其包括以下步骤：
在第一基板上依次形成TFT阵列层、阴极电极层、电子传输层、发光层以及空穴传输层；
在空穴传输层上形成第一电子胶层；
在第二基板上依次形成阳极电极层以及空穴注入层；
在空穴注入层上形成第二电子胶层；
将第一电子胶层与第二电子胶层贴合并连接。
在本发明所述的OLED器件的制作方法中，所述将第一电子胶层与第二电子胶层贴合并连接的步骤包括：
在真空条件下将第一基板以及第二基板进行正对压合，从而使得第一电子胶层与第二电子胶层贴合并粘结。
在本发明所述的OLED器件的制作方法中，所述在第一基板上依次形成TFT阵列层、阴极电极层、电子传输层、发光层以及空穴传输层的步骤包括：
在第一基板上设置TFT阵列层；
在TFT阵列层上设置阴极电极层；
在阴极电极层上设置电子传输层；
在电子传输层上设置发光层；
在发光层上设置空穴传输层。
在本发明所述的OLED器件的制作方法中，所述在第二基板上依次形成阳极电极层以及空穴注入层的步骤包括：
在第二基板上设置阻挡层；
在阻挡层上设置阳极电极层；
在阳极电极层上设置空穴注入层。
在本发明所述的OLED器件的制作方法中，所述第一电子胶层以及第二电子胶层均采用山梨醇。
在本发明所述的OLED器件的制作方法中，所述在空穴传输层上形成第一电子胶层的步骤包括：
采用蒸镀或旋涂的工艺，在空穴传输层上形成第一电子胶层。
在本发明所述的OLED器件的制作方法中，所述在空穴注入层上形成第二电子胶层的步骤包括：
采用蒸镀或旋涂的工艺，在空穴注入层上形成第二电子胶层。
本发明还提供了一种OLED器件的制作方法，其包括以下步骤：
在第一基板上依次形成TFT阵列层、阴极电极层、电子传输层、发光层以及空穴传输层；
在空穴传输层上形成第一电子胶层；
在第二基板上依次形成阳极电极层以及空穴注入层；
在空穴注入层上形成第二电子胶层；
在真空条件下将第一基板以及第二基板进行正对压合，从而使得第一电子胶层与第二电子胶层贴合并粘结；
所述第一电子胶层以及第二电子胶层均采用山梨醇。
本发明还提供了一种OLED器件，其包括：
第一基板以及依次设置于所述第一基板上的TFT阵列层、阴极电极层、电子传输层、发光层、空穴传输层以及第一电子胶层；
第二基板以及依次设置于所述第二基板上的阻挡层、阳极电极层、空穴注入层以及第二电子胶层；
所述第一电子胶层以及第二电子胶层贴合并粘结。
在本发明所述的OLED器件中，所述第一电子胶层以及第二电子胶层均采用山梨醇。
在本发明所述的OLED器件中，所述阳极电极层以及阴极电极层均采用氧化铟锡。
 有益效果
由上可知，本发明实施例中采用在第一基板上依次形成TFT阵列层、阴极电极层、电子传输层、发光层以及空穴传输层；在空穴传输层上形成第一电子胶层；在第二基板上依次形成阳极电极层以及空穴注入层；在空穴注入层上形成第二电子胶层；将第一电子胶层与第二电子胶层贴合并连接；从而实现该OLED器件的制成，由于在本实施例中，采用将该OLED器件分成两部分来分别制作，然后用电子胶层来粘结，具有加快生成效率的有益效果，并且，由于生产过程中，该阳极电极层与该发光层是分开制作的，可以避免物理气相沉淀形成该阳极电极层时溅射对该发光层的破坏，提高了产品良率。
 附图说明
图1是本发明一优选实施例中的OLED器件的制作方法流程图。
图2是本发明图1所示实施例中的OLED器件的局部结构示意图。
图3是本发明图1所示实施例中的OLED器件的另一局部结构示意图。
图4是本发明一优选实施例中的OLED器件的结构示意图。
 本发明的最佳实施方式
以下各实施例的说明是参考附加的图式，用以例示本发明可用以实施的特定实施例。本发明所提到的方向用语，例如「上」、「下」、「前」、「后」、「左」、「右」、「内」、「外」、「侧面」等，仅是参考附加图式的方向。因此，使用的方向用语是用以说明及理解本发明，而非用以限制本发明。
在图中，结构相似的模块是以相同标号表示。
请参照图1，该OLED器件的制作方法，包括以下步骤：
S101、在第一基板上依次形成TFT阵列层、阴极电极层、电子传输层、发光层以及空穴传输层；
S102、在空穴传输层上形成第一电子胶层；
S103、在第二基板上依次形成阳极电极层以及空穴注入层；
S104、在空穴注入层上形成第二电子胶层；
S105、将第一电子胶层与第二电子胶层贴合并连接。
下面对该OLED器件的制作方法的各个步骤进行详细说明。其中，该步骤S101执行完再执行步骤S102，该步骤S103执行完再执行步骤S104，而该步骤S101与步骤S103可以同步执行，也可以以任意先后顺序执行。
参照图2，在该步骤S101中，其包括以下子步骤：
S1011、在第一基板上设置TFT阵列层；在该步骤中，该第一基板11可以为柔性基板，TFT阵列层12包括多个薄膜晶体管。
S1012、在TFT阵列层上设置阴极电极层；在该步骤中，采用物理气象沉淀法在该TFT阵列层12上沉淀形成阴极电极层13，其中该阴极电极层13采用透明材料，例如，采用N型氧化物半导体-氧化铟锡ITO。
S1013、在阴极电极层13上设置电子传输层14；在该步骤中，可以通过蒸镀、旋涂等方式，在该阴极电极层13上形成电子传输层14。
S1014、在电子传输层上设置发光层；在该步骤中，可以通过蒸镀、旋涂等方式，在该电子传输层14上形成发光层15。该发光层15为有机发光层。
S1015、在发光层上设置空穴传输层。在该步骤中，可以通过蒸镀、旋涂等方式，在该发光层15上形成空穴传输层16。
在该步骤S102中，可以通过蒸镀、旋涂等方式，在该空穴传输层16上形成第一电子胶层17。其中，该第一电子胶层17具有高透明和高载流子迁移率的性能，该第一电子胶层17可以采用山梨醇。
参照图3，在该步骤S103中，其包括以下子步骤：
S1031、在第二基板上设置阻挡层；在该步骤中，该第二基板22可以为柔性基板。该阻挡层21为水氧阻隔性能较好的无机材料沉积形成，例如可以为SiNx、SiO2等。
S1032、在阻挡层上设置阳极电极层；在该步骤中，采用物理气象沉淀法在该阻挡层21上沉淀形成阳极电极层20，其中该阳极电极层20采用透明材料，例如，采用N型氧化物半导体-氧化铟锡ITO。
S1033、在阳极电极层上设置空穴注入层。在该步骤中，可以通过通过蒸镀、旋涂等方式来形成空穴注入层19。
在该步骤S104中，可以通过蒸镀、旋涂等方式，在该空穴注入层上形成第二电子胶层。其中，该第二电子胶层18具有高透明和高载流子迁移率的性能，该第二电子胶层18可以采用山梨醇。
在该步骤S105中，具体实施时，在真空条件下将第一基板11以及第二基板18进行正对压合，从而使得第一电子胶层17与第二电子胶层18贴合并粘结；然后使用高于第一电子胶层17以及第二电子胶层18熔点的温度进行烘烤1~5min，冷却后即可完成该OLED器件的制作。
由上可知，本发明实施例中采用在第一基板上依次形成TFT阵列层、阴极电极层、电子传输层、发光层以及空穴传输层；在空穴传输层上形成第一电子胶层；在第二基板上依次形成阳极电极层以及空穴注入层；在空穴注入层上形成第二电子胶层；将第一电子胶层与第二电子胶层贴合并连接；从而实现该OLED器件的制成，由于在本实施例中，采用将该OLED器件分成两部分来分别制作，然后用电子胶层来粘结，具有加快生成效率的有益效果，并且，由于生产过程中，该阳极电极层与该发光层是分开制作的，可以避免物理气相沉淀形成该阳极电极层时溅射对该发光层的破坏，提高了产品良率。
请参照图4，图4是本发明一优选实施例中的OLED器件的结构图，该OLED器件包括：第一基板11、TFT阵列层12、阴极电极层13、电子传输层14、发光层15、空穴传输层16、第一电子胶层17、以及第二基板22。
其中，该TFT阵列层12、阴极电极层13、电子传输层14、发光层15、空穴传输层16以及第一电子胶层17依次设置该第一基板上11。
具体地，该TFT阵列12层沉积于该第一基板11上,其中该TFT阵列层即为像素电极层；该阴极电极层13采用物理气相沉淀形成于该TFT阵列层12上；电子传输层14采用旋涂或蒸镀的方式形成在阴极电极层13上；发光层15为有机发光层，其采用旋涂或蒸镀的方式形成在电子传输层16上；空穴传输层16采用旋涂或蒸镀的方式形成发光层15上。
其中，该阻挡层21、阳极电极层20、空穴注入层19、第二电子胶层18依次设置于该第二基板22上。
第一电子胶层17以及第二电子胶层18贴合并粘结。该第一电子胶层17以及第二电子胶层18均采用山梨醇。该阳极电极层20以及阴极电极层13均采用氧化铟锡。
由上可知，本发明实施例中，该阳极电极层与该发光层是分开制作的，可以避免物理气相沉淀形成该阳极电极层时溅射对该发光层的破坏，提高了产品良率。
综上所述，虽然本发明已以优选实施例揭露如上，但上述优选实施例并非用以限制本发明，本领域的普通技术人员，在不脱离本发明的精神和范围内，均可作各种更动与润饰，因此本发明的保护范围以权利要求界定的范围为准。

Claims (11)

  1. 一种OLED器件的制作方法，其包括以下步骤：
    在第一基板上依次形成TFT阵列层、阴极电极层、电子传输层、发光层以及空穴传输层；
    在空穴传输层上形成第一电子胶层；
    在第二基板上依次形成阳极电极层以及空穴注入层；
    在空穴注入层上形成第二电子胶层；
    将第一电子胶层与第二电子胶层贴合并连接。
  2. 根据权利要求1所述的OLED器件的制作方法，其中，所述将第一电子胶层与第二电子胶层贴合并连接的步骤包括：
    在真空条件下将第一基板以及第二基板进行正对压合，从而使得第一电子胶层与第二电子胶层贴合并粘结。
  3. 根据权利要求1所述的OLED器件的制作方法，其中所述在第一基板上依次形成TFT阵列层、阴极电极层、电子传输层、发光层以及空穴传输层的步骤包括：
    在第一基板上设置TFT阵列层；
    在TFT阵列层上设置阴极电极层；
    在阴极电极层上设置电子传输层；
    在电子传输层上设置发光层；
    在发光层上设置空穴传输层。
  4. 根据权利要求1所述的OLED器件的制作方法，其中，所述在第二基板上依次形成阳极电极层以及空穴注入层的步骤包括：
    在第二基板上设置阻挡层；
    在阻挡层上设置阳极电极层；
    在阳极电极层上设置空穴注入层。
  5. 根据权利要求1所述的OLED器件的制作方法，其中，所述第一电子胶层以及第二电子胶层均采用山梨醇。
  6. 根据权利要求1所述的OLED器件的制作方法，其中，所述在空穴传输层上形成第一电子胶层的步骤包括：
    采用蒸镀或旋涂的工艺，在空穴传输层上形成第一电子胶层。
  7. 根据权利要求1所述的OLED器件的制作方法，其中，所述在空穴注入层上形成第二电子胶层的步骤包括：
    采用蒸镀或旋涂的工艺，在空穴注入层上形成第二电子胶层。
  8. 一种OLED器件的制作方法，其包括以下步骤：
    在第一基板上依次形成TFT阵列层、阴极电极层、电子传输层、发光层以及空穴传输层；
    在空穴传输层上形成第一电子胶层；
    在第二基板上依次形成阳极电极层以及空穴注入层；
    在空穴注入层上形成第二电子胶层；
    在真空条件下将第一基板以及第二基板进行正对压合，从而使得第一电子胶层与第二电子胶层贴合并粘结；
    所述第一电子胶层以及第二电子胶层均采用山梨醇。
  9. 一种OLED器件，其包括：
    第一基板以及依次设置于所述第一基板上的TFT阵列层、阴极电极层、电子传输层、发光层、空穴传输层以及第一电子胶层；
    第二基板以及依次设置于所述第二基板上的阻挡层、阳极电极层、空穴注入层以及第二电子胶层；
    所述第一电子胶层以及第二电子胶层贴合并粘结。
  10. 根据权利要求9所述的OLED器件，其中，所述第一电子胶层以及第二电子胶层均采用山梨醇。
  11. 根据权利要求8所述的OLED器件，其中，所述阳极电极层以及阴极电极层均采用氧化铟锡。
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