WO2018090444A1 - Oled基板及其制作方法 - Google Patents

Oled基板及其制作方法 Download PDF

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Publication number
WO2018090444A1
WO2018090444A1 PCT/CN2016/112445 CN2016112445W WO2018090444A1 WO 2018090444 A1 WO2018090444 A1 WO 2018090444A1 CN 2016112445 W CN2016112445 W CN 2016112445W WO 2018090444 A1 WO2018090444 A1 WO 2018090444A1
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Prior art keywords
substrate
layer
oled
pixel defining
disposed
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PCT/CN2016/112445
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English (en)
French (fr)
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王杲祯
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武汉华星光电技术有限公司
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Priority to KR1020197015375A priority Critical patent/KR102185577B1/ko
Priority to JP2019522662A priority patent/JP6800327B2/ja
Priority to EP16921522.5A priority patent/EP3544058B1/en
Priority to US15/503,717 priority patent/US10333093B2/en
Publication of WO2018090444A1 publication Critical patent/WO2018090444A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
    • H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
    • H10K50/131—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit with spacer layers between the electroluminescent layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/816—Multilayers, e.g. transparent multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/871—Self-supporting sealing arrangements
    • H10K59/8723—Vertical spacers, e.g. arranged between the sealing arrangement and the OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/851—Division of substrate

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an OLED substrate and a method of fabricating the same.
  • OLED Organic Light-Emitting Diode
  • organic electroluminescent display also known as an organic electroluminescent display
  • OLED Organic Light-Emitting Diode
  • High definition and contrast ratio, near 180° viewing angle, wide temperature range, flexible display and large-area full-color display, etc., are recognized by the industry as the most promising display device.
  • OLEDs can be classified into two types: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED).
  • PMOLED passive matrix OLED
  • AMOLED active matrix OLED
  • the AMOLED has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used as a high-definition large-sized display device.
  • the OLED display device includes an OLED substrate 600 and a package cover 700 disposed above the OLED substrate 600.
  • the OLED substrate 600 is generally
  • the substrate substrate 100 includes a plurality of anodes 200 disposed on the substrate substrate 100 and spaced apart from each other, and a pixel defining layer (PDL) 300 disposed on the substrate substrate 100 and the plurality of anodes 200.
  • PDL pixel defining layer
  • the hole injection layer 410, the hole transport layer 420, the organic light-emitting layer 430, the electron transport layer 440, the electron injection layer 450, and the cathode 460 are sequentially stacked on the anode 200 from bottom to top; the package cover 700 Contact with a plurality of spacers 500 on the OLED substrate 600.
  • the anode 200, the hole injection layer 410, the hole transport layer 420, the organic light-emitting layer 430, the electron transport layer 440, the electron injection layer 450, and the cathode 460 which are stacked in this order from bottom to top together constitute an OLED.
  • the OLED device generally employs ITO and metal as the anode 200 and the cathode 460 of the device, respectively, and electrons and holes are injected from the cathode 460 and the anode 200 to the electron transport layer 440 and the hole transport layer 420, respectively, under a certain voltage.
  • the electrons and holes migrate to the organic light-emitting layer 430 through the electron transport layer 440 and the hole transport layer 420, respectively, and meet in the organic light-emitting layer 430 to form excitons and excite the luminescent molecules, which are emitted by radiation relaxation. Visible light.
  • the fabrication process of the substrate substrate 100, the anode 200, and the pixel defining layer 300 is generally referred to as a TFT process, and the subsequent hole injection layer 410 and the hole transport layer 420 are referred to.
  • the manufacturing process of the organic light-emitting layer 430, the electron-transporting layer 440, the electron-injecting layer 450, and the cathode 460 is called an OLED process. Since the substrate size of the OLED process is generally smaller than the substrate size of the TFT process, it is necessary to perform the OLED process before performing the OLED process.
  • the substrate on which the TFT process is completed (the substrate is usually glass) is cut. The cutting is usually cut by a cutter wheel.
  • the surface of the substrate on which the TFT process is completed is usually performed before cutting.
  • a photoresist (PR) layer 800 (shown in FIG. 2) is coated, and after the dicing, the photoresist layer 800 is peeled off. Since the pixel defining layer 300 is also generally formed using a photoresist material, that is, the same material as the photoresist layer 800, the pixel defining layer 300 is easily peeled off during the stripping process of the photoresist layer 800.
  • the protection of the pixel defining layer 300 is lost.
  • a short circuit between the plurality of anodes 200 causes the OLED device to fail.
  • the vapor injection layer 410, the hole transport layer 420, the organic light-emitting layer 430, the electron transport layer 440, the electron injection layer 450, and the cathode 460 are vaporized.
  • the plating process requires the use of a Fine Metal Mask (FMM) 900. Since the photoresist material used in the pixel defining layer 300 is not stable, it is highly volatile to the fine metal mask during the evaporation process.
  • the film 900 is caused to cause contamination of the fine metal mask 900, so that the cleaning frequency of the fine metal mask 900 is increased, and the use efficiency is lowered, thereby increasing the production cost.
  • FMM Fine Metal Mask
  • An object of the present invention is to provide a method for fabricating an OLED substrate, which can reduce the risk of the pixel defining layer being detached in the photoresist stripping process and reduce the risk of contamination of the fine metal mask in the vapor deposition process.
  • Another object of the present invention is to provide an OLED substrate prepared by the above method for fabricating an OLED substrate, wherein the pixel defining layer has a complete structure, can effectively protect the lower anode and the substrate, and has good device performance.
  • the present invention first provides a method for fabricating an OLED substrate, comprising the following steps:
  • Step 1 providing a substrate, forming a plurality of anodes disposed on the substrate; depositing an inorganic film layer on the substrate and the plurality of anodes;
  • Step 2 patterning the inorganic film layer by using a halftone mask to obtain a pixel setting a plurality of spacers disposed on the pixel defining layer, and a plurality of openings disposed on the pixel defining layer and respectively corresponding to the plurality of anodes, each opening exposing at least a corresponding anode Part of the first substrate;
  • Step 3 coating a photoresist layer on the first substrate, the photoresist layer covering the pixel defining layer, a plurality of spacers, and an anode;
  • Step 4 peeling off the photoresist layer on the second substrate to obtain a third substrate
  • Step 5 forming a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, and a cathode in order from the bottom to the top in the plurality of openings on the third substrate to obtain an OLED. Substrate.
  • the base substrate is a TFT substrate.
  • the material of the inorganic film layer includes at least one of silicon nitride and silicon oxide.
  • the material of the anode is a transparent conductive metal oxide, and the material of the cathode is a metal.
  • the first substrate coated with the photoresist layer is cut by a cutter wheel
  • the photoresist layer on the second substrate is stripped by using a photoresist stripping solution
  • the hole injection layer, the hole transport layer, the organic light-emitting layer, and the hole-emitting layer, the hole-emitting layer, and the organic light-emitting layer are sequentially formed from the bottom to the top in a plurality of openings of the third substrate by a vapor deposition method using a fine metal mask.
  • An electron transport layer, an electron injection layer, and a cathode are sequentially formed from the bottom to the top in a plurality of openings of the third substrate by a vapor deposition method using a fine metal mask.
  • the present invention also provides an OLED substrate, comprising: a substrate substrate; a plurality of anodes disposed on the substrate substrate and spaced apart from each other; a pixel defining layer disposed on the substrate substrate and the plurality of anodes; a plurality of spacers on the pixel defining layer, a plurality of openings disposed on the pixel defining layer and respectively corresponding to the plurality of anodes, disposed in the plurality of openings and on the anode from the bottom
  • the hole injection layer, the hole transport layer, the organic light-emitting layer, the electron transport layer, the electron injection layer, and the cathode are stacked in this order; wherein the material of the pixel defining layer and the plurality of spacers are inorganic materials.
  • the base substrate is a TFT substrate.
  • the inorganic substance includes at least one of silicon nitride and silicon oxide.
  • the material of the anode is a transparent conductive metal oxide, and the material of the cathode is a metal.
  • the invention also provides a method for fabricating an OLED substrate, comprising the following steps:
  • Step 1 providing a substrate, forming a plurality of anodes disposed on the substrate; depositing an inorganic film layer on the substrate and the plurality of anodes;
  • Step 2 Performing a patterning process on the inorganic film layer by using a halftone mask to obtain a pixel defining layer, a plurality of spacers disposed on the pixel defining layer, and being disposed on the pixel defining layer and respectively corresponding to a plurality of openings of the plurality of anodes, each opening exposing at least a corresponding anode Part of the first substrate;
  • Step 3 coating a photoresist layer on the first substrate, the photoresist layer covering the pixel defining layer, a plurality of spacers, and an anode;
  • Step 4 peeling off the photoresist layer on the second substrate to obtain a third substrate
  • Step 5 forming a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, and a cathode in order from the bottom to the top in the plurality of openings on the third substrate to obtain an OLED.
  • the base substrate is a TFT substrate
  • the material of the inorganic film layer includes at least one of silicon nitride and silicon oxide.
  • a method for fabricating an OLED substrate can reduce the risk of the pixel defining layer being erroneously peeled off during the photoresist stripping process by using the inorganic material to form the pixel defining layer, and at the same time reducing the evaporation process.
  • the risk of contamination of the fine metal mask is reduced, which in turn reduces the frequency of cleaning of the fine metal mask and improves the efficiency of the use of the fine metal mask.
  • the OLED substrate provided by the invention is prepared by using the above OLED substrate manufacturing method, and the pixel defining layer has a complete structure, which can effectively protect the lower anode and the substrate, and the device performance is good.
  • FIG. 1 is a schematic structural view of a conventional OLED display device
  • FIG. 2 is a schematic diagram of photoresist coating of an OLED substrate in an OLED display device before the OLED process
  • FIG. 3 is a schematic diagram of an evaporation process of an OLED substrate in a conventional OLED display device
  • 5-6 are schematic diagrams showing the first step of the method for fabricating the OLED substrate of the present invention.
  • step 2 is a schematic diagram of step 2 of a method of fabricating an OLED substrate of the present invention.
  • step 4 is a schematic diagram of step 4 of a method of fabricating an OLED substrate of the present invention.
  • FIG. 11-12 are schematic diagrams showing the step 5 of the method for fabricating an OLED substrate of the present invention and FIG. 12 A schematic structural view of an OLED substrate of the present invention
  • FIG. 13 is a schematic diagram of a step 20 of a method of fabricating an OLED display device of the present invention and a schematic structural view of the OLED display device of the present invention.
  • the present invention first provides a method for fabricating an OLED substrate, including the following steps:
  • Step 1 as shown in Figure 5, provides a substrate 10, on the substrate 10 is formed with a plurality of anodes 20 arranged at intervals;
  • an inorganic film layer 80 is deposited on the base substrate 10 and the plurality of anodes 20.
  • the base substrate 10 is a TFT substrate, and the subsequently produced OLED substrate is applied to an AMOLED display device.
  • the material of the inorganic film layer 80 includes at least one of silicon nitride (SiN x ) and silicon oxide (SiO x ).
  • the material of the anode 20 is a transparent conductive metal oxide.
  • the material of the anode 20 is indium tin oxide (ITO).
  • Step 2 as shown in FIG. 7, the inorganic film layer 80 is patterned by using a halftone mask 85 to obtain a pixel defining layer 30, a plurality of spacers 50 disposed on the pixel defining layer 30, and
  • the first substrate 91 is prepared by being disposed on the pixel defining layer 30 and corresponding to the plurality of openings 31 of the plurality of anodes 20, respectively, and each opening 31 exposing at least a portion of the corresponding anode 20.
  • the heights of the plurality of spacers 50 are the same; preferably, the plurality of spacers 50 have a column shape.
  • Step 3 as shown in FIG. 8, a photoresist layer 95 is coated on the first substrate 91, the photoresist layer 95 covers the pixel defining layer 30, a plurality of spacers 50, and an anode 20;
  • the first substrate 91 coated with the photoresist layer 95 is diced to obtain a plurality of second substrates 92.
  • the first substrate 91 of the photoresist layer 95 is cut by a cutter wheel.
  • Step 4 as shown in FIG. 10, the photoresist layer 95 on the second substrate 92 is peeled off to obtain a third substrate 93.
  • the photoresist layer 95 on the second substrate 92 is peeled off by using a photoresist stripping solution.
  • the photoresist stripping solution since the material of the pixel defining layer 30 is Therefore, the photoresist stripping solution does not damage the pixel defining layer 30, so that the pixel defining layer 3 can effectively protect the lower anode 20 and the substrate substrate 10.
  • Step 5 as shown in FIG. 11-12, a hole injection layer 41, a hole transport layer 42, an organic light-emitting layer 43, and electron transport are sequentially formed from the bottom to the top in the plurality of openings 31 on the third substrate 93.
  • Layer 44, electron injection layer 45, and cathode 46 produce an OLED substrate 60.
  • the hole injection layer 41 and the holes are sequentially formed from the bottom to the top in the plurality of openings 31 of the third substrate 93 by a vapor deposition method using a fine metal mask 65.
  • the material of the pixel defining layer 30 is inorganic, the property is relatively stable, so that it does not volatilize onto the fine metal mask 65 during the evaporation process, thereby causing contamination of the fine metal mask 65, thereby reducing the fine metal.
  • the cleaning frequency of the mask 65 improves the use efficiency of the fine metal mask 65.
  • the material of the cathode 46 is a metal.
  • the material of the cathode 46 includes at least one of magnesium, silver, and aluminum.
  • the risk of the pixel defining layer 30 being erroneously peeled off in the photoresist stripping process can be reduced, and the fine metal mask 65 in the evaporation process can be reduced.
  • the present invention further provides a method for fabricating an OLED display device, including the following steps:
  • Step 10 as shown in Figure 5-12, using the above OLED substrate manufacturing method to produce an OLED substrate 60;
  • Step 20 as shown in FIG. 13, a package cover 70 is provided, and the package cover 70 is aligned and sealed with the OLED substrate 60.
  • the package cover 70 and the OLED substrate 60 are A plurality of spacers 50 are in contact to form an OLED display device.
  • the material of the package cover 70 is glass.
  • the spacer 50 functions to support the package cover 70.
  • the OLED substrate 60 is prepared by using the method for fabricating the OLED substrate, which can reduce the risk of the pixel defining layer 30 being erroneously peeled off during the photoresist stripping process, and reduce the fine metal mask 65 in the evaporation process. The risk of contamination, thereby reducing the frequency of cleaning of the fine metal mask 65, and improving the efficiency of use of the fine metal mask 65.
  • the present invention further provides an OLED substrate 60, including: a substrate substrate 10 disposed on the substrate substrate 10 and spaced apart from each other. a plurality of anodes 20, a pixel defining layer 30 disposed on the base substrate 10 and the plurality of anodes 20, and a plurality of spacers 50 disposed on the pixel defining layer 30, and disposed on the pixel defining layer 30 a plurality of openings 31 corresponding to the plurality of anodes 20, hole injection layers 41 disposed in the plurality of openings 31 and sequentially stacked from bottom to top on the anode 20, and hole transporting
  • the base substrate 10 is a TFT substrate, and the OLED substrate is applied to an AMOLED display device.
  • the inorganic substance includes at least one of silicon nitride (SiN x ) and silicon oxide (SiO x ).
  • the material of the anode 20 is a transparent conductive metal oxide.
  • the material of the anode 20 is indium tin oxide (ITO).
  • the material of the cathode 46 is a metal.
  • the material of the cathode 46 includes at least one of magnesium, silver, and aluminum.
  • the heights of the plurality of spacers 50 are the same; preferably, the plurality of spacers 50 have a column shape.
  • the pixel defining layer 30 is made of an inorganic material, and the risk of the pixel defining layer 30 being erroneously peeled off during the manufacturing process can be reduced.
  • the pixel defining layer 30 has a complete structure and can effectively protect the lower anode 20 and the substrate. 10, the device performance is good.
  • the present invention further provides an OLED display device comprising an OLED substrate 60 and a package cover plate 70 which are oppositely disposed and sealedly connected;
  • the OLED substrate 60 is the OLED substrate 60 described above, and the package cover 70 is in contact with a plurality of spacers 50 on the OLED substrate 60.
  • the material of the package cover 70 is glass.
  • the spacer 50 functions to support the package cover 70.
  • the above OLED display device comprises the above OLED substrate, and the device performance is good.
  • the present invention provides an OLED substrate and a method of fabricating the same.
  • the method for fabricating the OLED substrate of the present invention can reduce the risk of the pixel defining layer being erroneously peeled off in the photoresist stripping process by using the inorganic material to form the pixel defining layer, and reduce the risk of contamination of the fine metal mask in the vapor deposition process. In turn, the cleaning frequency of the fine metal mask is reduced, and the use efficiency of the fine metal mask is improved.
  • the OLED substrate of the invention is prepared by the above-mentioned OLED substrate manufacturing method, and the pixel defining layer has a complete structure, and can effectively protect the lower anode and the substrate, The performance is good.

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  • Optics & Photonics (AREA)
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Abstract

提供了一种OLED基板及其制作方法。OLED基板的制作方法，通过采用无机物材料制作像素定义层，能够降低光阻剥离制程中像素定义层被误剥离的风险，同时降低蒸镀制程中精细金属掩膜板被污染的风险，提高精细金属掩膜板的使用效率。OLED基板，采用上述OLED基板的制作方法制备而成，像素定义层结构完整，能够有效保护下方阳极及衬底基板，器件性能好。

Description

OLED基板及其制作方法 技术领域
本发明涉及显示技术领域，尤其涉及一种OLED基板及其制作方法。
背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)显示器，也称为有机电致发光显示器，是一种新兴的平板显示装置，由于其具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
图1为现有的OLED显示装置的结构示意图，如图1所示，所述OLED显示装置包括：OLED基板600与设于所述OLED基板600上方的封装盖板700；所述OLED基板600通常包括：衬底基板100、设于所述衬底基板100上且间隔设置的数个阳极200、设于所述衬底基板100及数个阳极200上的像素定义层(PDL)300、设于所述像素定义层300上的数个间隔物500、设于所述像素定义层300上且分别对应于所述数个阳极200的数个开口310、设于所述数个开口310内且在所述阳极200上从下到上依次层叠设置的空穴注入层410、空穴传输层420、有机发光层430、电子传输层440、电子注入层450、及阴极460；所述封装盖板700与所述OLED基板600上的数个间隔物500相接触。
具体的，所述从下到上依次层叠设置的阳极200、空穴注入层410、空穴传输层420、有机发光层430、电子传输层440、电子注入层450、及阴极460共同构成一OLED器件，所述OLED器件通常采用ITO和金属分别作为器件的阳极200和阴极460，在一定电压驱动下，电子和空穴分别从阴极460和阳极200注入到电子传输层440和空穴传输层420，电子和空穴分别经过电子传输层440和空穴传输层420迁移到有机发光层430，并在有机发光层430中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
具体的，在所述OLED基板600的生产过程中，通常将衬底基板100、阳极200、及像素定义层300的制作过程称为TFT制程，将后续空穴注入层410、空穴传输层420、有机发光层430、电子传输层440、电子注入层450、及阴极460的制作过程称为OLED制程，由于OLED制程的基板尺寸通常会小于TFT制程的基板尺寸，因此在进行OLED制程之前需要对完成TFT制程的基板(衬底通常为玻璃)进行切割，切割通常使用刀轮切割，由于切割产生的玻璃碎屑会对OLED器件造成损伤，所以在切割之前，通常会在完成TFT制程的基板表面包覆一光阻(PR)层800(如图2所示)，在切割之后，再对光阻层800进行剥离。由于像素定义层300通常也使用光阻材料来制作，即与所述光阻层800的材料相同，因此在所述光阻层800的剥离过程中很容易造成所述像素定义层300的误剥离，使得后续空穴注入层410、空穴传输层420、有机发光层430、电子传输层440、电子注入层450、及阴极460等结构层成膜后，造成失去所述像素定义层300保护的数个阳极200之间短路，进而造成OLED器件失效。
同时，如图3所示，在OLED制程中，所述空穴注入层410、空穴传输层420、有机发光层430、电子传输层440、电子注入层450、及阴极460等结构层的蒸镀制程需要使用到精细金属掩膜板(FMM，Fine Metal Mask)900，由于所述像素定义层300使用的光阻材料稳定性不强，在蒸镀过程中极易挥发至所述精细金属掩膜板900上，造成所述精细金属掩膜板900的污染，使得所述精细金属掩膜板900的清洗频次增加，使用效率降低，从而提高生产成本。
发明内容
本发明的目的在于提供一种OLED基板的制作方法，能够降低光阻剥离制程中像素定义层被误剥离的风险，同时降低蒸镀制程中精细金属掩膜板被污染的风险。
本发明的目的还在于提供一种OLED基板，采用上述OLED基板的制作方法制备而成，像素定义层结构完整，能够有效保护下方阳极及衬底基板，器件性能好。
为实现上述目的，本发明首先提供一种OLED基板的制作方法，包括如下步骤：
步骤1、提供一衬底基板，在所述衬底基板上形成间隔设置的数个阳极；在所述衬底基板及数个阳极上沉积一无机膜层；
步骤2、采用半色调光罩对所述无机膜层进行图形化处理，得到像素定 义层、设于所述像素定义层上的数个间隔物、及设于所述像素定义层上且分别对应于所述数个阳极的数个开口，每个开口暴露出对应的阳极的至少一部分，制得第一基板；
步骤3、在所述第一基板上涂布一光阻层，所述光阻层覆盖所述像素定义层、数个间隔物、及阳极；
对所述涂布光阻层的第一基板进行切割，得到数个第二基板；
步骤4、对所述第二基板上的光阻层进行剥离，得到第三基板；
步骤5、在所述第三基板上的数个开口内从下到上依次形成空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层、及阴极，制得一OLED基板。
所述衬底基板为TFT基板。
所述无机膜层的材料包括氮化硅与氧化硅中的至少一种。
所述阳极的材料为透明导电金属氧化物，所述阴极的材料为金属。
所述步骤3中，采用刀轮对所述涂布光阻层的第一基板进行切割；
所述步骤4中，采用光阻剥离液对所述第二基板上的光阻层进行剥离；
所述步骤5中，采用精细金属掩膜板通过蒸镀的方法在所述第三基板的数个开口内从下到上依次形成所述空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层、及阴极。
本发明还提供一种OLED基板，包括：衬底基板、设于所述衬底基板上且间隔设置的数个阳极、设于所述衬底基板及数个阳极上的像素定义层、设于所述像素定义层上的数个间隔物、设于所述像素定义层上且分别对应于所述数个阳极的数个开口、设于所述数个开口内且在所述阳极上从下到上依次层叠设置的空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层、及阴极；其中，所述像素定义层与数个间隔物的材质均为无机物。
所述衬底基板为TFT基板。
所述无机物包括氮化硅与氧化硅中的至少一种。
所述阳极的材料为透明导电金属氧化物，所述阴极的材料为金属。
本发明还提供一种OLED基板的制作方法，包括如下步骤：
步骤1、提供一衬底基板，在所述衬底基板上形成间隔设置的数个阳极；在所述衬底基板及数个阳极上沉积一无机膜层；
步骤2、采用半色调光罩对所述无机膜层进行图形化处理，得到像素定义层、设于所述像素定义层上的数个间隔物、及设于所述像素定义层上且分别对应于所述数个阳极的数个开口，每个开口暴露出对应的阳极的至少 一部分，制得第一基板；
步骤3、在所述第一基板上涂布一光阻层，所述光阻层覆盖所述像素定义层、数个间隔物、及阳极；
对所述涂布光阻层的第一基板进行切割，得到数个第二基板；
步骤4、对所述第二基板上的光阻层进行剥离，得到第三基板；
步骤5、在所述第三基板上的数个开口内从下到上依次形成空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层、及阴极，制得一OLED基板；
其中，所述衬底基板为TFT基板；
其中，所述无机膜层的材料包括氮化硅与氧化硅中的至少一种。
本发明的有益效果：本发明提供的一种OLED基板的制作方法，通过采用无机物材料制作像素定义层，能够降低光阻剥离制程中像素定义层被误剥离的风险，同时降低蒸镀制程中精细金属掩膜板被污染的风险，进而降低精细金属掩膜板的清洗频次，提高精细金属掩膜板的使用效率。本发明提供的一种OLED基板，采用上述OLED基板的制作方法制备而成，像素定义层结构完整，能够有效保护下方阳极及衬底基板，器件性能好。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
附图中，
图1为现有的OLED显示装置的结构示意图；
图2为现有的OLED显示装置中的OLED基板在OLED制程前的光阻包覆示意图；
图3为现有的OLED显示装置中的OLED基板的蒸镀制程示意图；
图4为本发明的OLED基板的制作方法的流程图；
图5-6为本发明的OLED基板的制作方法的步骤1的示意图；
图7为本发明的OLED基板的制作方法的步骤2的示意图；
图8-9为本发明的OLED基板的制作方法的步骤3的示意图；
图10为本发明的OLED基板的制作方法的步骤4的示意图；
图11-12为本发明的OLED基板的制作方法的步骤5的示意图且图12 为本发明的OLED基板的结构示意图；
图13为本发明的OLED显示装置的制作方法的步骤20的示意图暨本发明的OLED显示装置的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例进行详细描述。
请参阅图4，本发明首先提供一种OLED基板的制作方法，包括如下步骤：
步骤1、如图5所示，提供一衬底基板10，在所述衬底基板10上形成间隔设置的数个阳极20；
如图6所示，在所述衬底基板10及数个阳极20上沉积一无机膜层80。
优选的，所述衬底基板10为TFT基板，后续制得的OLED基板应用于AMOLED显示装置中。
具体的，所述无机膜层80的材料包括氮化硅(SiNx)与氧化硅(SiOx)中的至少一种。
具体的，所述阳极20的材料为透明导电金属氧化物，优选的，所述阳极20的材料为氧化铟锡(ITO)。
步骤2、如图7所示，采用半色调光罩85对所述无机膜层80进行图形化处理，得到像素定义层30、设于所述像素定义层30上的数个间隔物50、及设于所述像素定义层30上且分别对应于所述数个阳极20的数个开口31，每个开口31暴露出对应的阳极20的至少一部分，制得第一基板91。
具体的，所述数个间隔物50的高度相同；优选的，所述数个间隔物50的形状均为柱状。
步骤3、如图8所示，在所述第一基板91上涂布一光阻层95，所述光阻层95覆盖所述像素定义层30、数个间隔物50、及阳极20；
如图9所示，对所述涂布光阻层95的第一基板91进行切割，得到数个第二基板92。
具体的，所述步骤3中，采用刀轮对所述涂布光阻层95的第一基板91进行切割。
步骤4、如图10所示，对所述第二基板92上的光阻层95进行剥离，得到第三基板93。
具体的，所述步骤4中，采用光阻剥离液对所述第二基板92上的光阻层95进行剥离。在光阻剥离过程中，由于所述像素定义层30的材料为无 机物，因此，所述光阻剥离液不会对所述像素定义层30造成损伤，使得所述像素定义层3能够有效保护下方阳极20及衬底基板10。
步骤5、如图11-12所示，在所述第三基板93上的数个开口31内从下到上依次形成空穴注入层41、空穴传输层42、有机发光层43、电子传输层44、电子注入层45、及阴极46，制得一OLED基板60。
具体的，所述步骤5中，采用精细金属掩膜板65通过蒸镀的方法在所述第三基板93的数个开口31内从下到上依次形成所述空穴注入层41、空穴传输层42、有机发光层43、电子传输层44、电子注入层45、及阴极46。
由于所述像素定义层30的材料为无机物，性质比较稳定，因此在蒸镀过程中不会挥发至所述精细金属掩膜板65上造成精细金属掩膜板65的污染，从而降低精细金属掩膜板65的清洗频次，提高精细金属掩膜板65的使用效率。
具体的，所述阴极46的材料为金属，优选的，所述阴极46的材料包括镁、银、及铝中的至少一种。
上述OLED基板的制作方法，通过采用无机物材料制作像素定义层30，能够降低光阻剥离制程中像素定义层30被误剥离的风险，同时降低蒸镀制程中精细金属掩膜板65被污染的风险，从而降低精细金属掩膜板65的清洗频次，提高精细金属掩膜板65的使用效率。
基于上述OLED基板的制作方法，本发明还提供一种OLED显示装置的制作方法，包括如下步骤：
步骤10、如图5-12所示，采用上述OLED基板的制作方法制得一OLED基板60；
步骤20、如图13所示，提供一封装盖板70，将所述封装盖板70与所述OLED基板60对位组合并密封连接，所述封装盖板70与所述OLED基板60上的数个间隔物50相接触，制得一OLED显示装置。
具体的，所述封装盖板70的材质为玻璃。
具体的，所述OLED显示装置中，所述间隔物50起到支撑所述封装盖板70的作用。
上述OLED显示装置的制作方法，采用上述OLED基板的制作方法制备OLED基板60，能够降低光阻剥离制程中像素定义层30被误剥离的风险，同时降低蒸镀制程中精细金属掩膜板65被污染的风险，从而降低精细金属掩膜板65的清洗频次，提高精细金属掩膜板65的使用效率。
请参阅图12，基于上述OLED基板的制作方法，本发明还提供一种OLED基板60，包括：衬底基板10、设于所述衬底基板10上且间隔设置 的数个阳极20、设于所述衬底基板10及数个阳极20上的像素定义层30、设于所述像素定义层30上的数个间隔物50、设于所述像素定义层30上且分别对应于所述数个阳极20的数个开口31、设于所述数个开口31内且在所述阳极20上从下到上依次层叠设置的空穴注入层41、空穴传输层42、有机发光层43、电子传输层44、电子注入层45、及阴极46；其中，所述像素定义层30与数个间隔物50的材质均为无机物。
优选的，所述衬底基板10为TFT基板，所述OLED基板应用于AMOLED显示装置中。
具体的，所述无机物包括氮化硅(SiNx)与氧化硅(SiOx)中的至少一种。
具体的，所述阳极20的材料为透明导电金属氧化物，优选的，所述阳极20的材料为氧化铟锡(ITO)。
具体的，所述阴极46的材料为金属，优选的，所述阴极46的材料包括镁、银、铝中的至少一种。
具体的，所述数个间隔物50的高度相同；优选的，所述数个间隔物50的形状均为柱状。
上述OLED基板，通过采用无机物材料制作像素定义层30，能够降低制作过程中像素定义层30被误剥离的风险，所述像素定义层30的结构完整，能够有效保护下方阳极20及衬底基板10，器件性能好。
请参阅图13，基于上述OLED显示装置的制作方法，本发明还提供一种OLED显示装置，包括相对设置且密封连接的OLED基板60与封装盖板70；
所述OLED基板60为上述OLED基板60，所述封装盖板70与所述OLED基板60上的数个间隔物50相接触。
具体的，所述封装盖板70的材质为玻璃。
具体的，所述OLED显示装置中，所述间隔物50起到支撑所述封装盖板70的作用。
上述OLED显示装置，含有上述OLED基板，器件性能好。
综上所述，本发明提供一种OLED基板及其制作方法。本发明的OLED基板的制作方法，通过采用无机物材料制作像素定义层，能够降低光阻剥离制程中像素定义层被误剥离的风险，同时降低蒸镀制程中精细金属掩膜板被污染的风险，进而降低精细金属掩膜板的清洗频次，提高精细金属掩膜板的使用效率。本发明的OLED基板，采用上述OLED基板的制作方法制备而成，像素定义层结构完整，能够有效保护下方阳极及衬底基板，器 件性能好。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (12)

  1. 一种OLED基板的制作方法，包括如下步骤：
    步骤1、提供一衬底基板，在所述衬底基板上形成间隔设置的数个阳极；在所述衬底基板及数个阳极上沉积一无机膜层；
    步骤2、采用半色调光罩对所述无机膜层进行图形化处理，得到像素定义层、设于所述像素定义层上的数个间隔物、及设于所述像素定义层上且分别对应于所述数个阳极的数个开口，每个开口暴露出对应的阳极的至少一部分，制得第一基板；
    步骤3、在所述第一基板上涂布一光阻层，所述光阻层覆盖所述像素定义层、数个间隔物、及阳极；
    对所述涂布光阻层的第一基板进行切割，得到数个第二基板；
    步骤4、对所述第二基板上的光阻层进行剥离，得到第三基板；
    步骤5、在所述第三基板上的数个开口内从下到上依次形成空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层、及阴极，制得一OLED基板。
  2. 如权利要求1所述的OLED基板的制作方法，其中，所述衬底基板为TFT基板。
  3. 如权利要求1所述的OLED基板的制作方法，其中，所述无机膜层的材料包括氮化硅与氧化硅中的至少一种。
  4. 如权利要求1所述的OLED基板的制作方法，其中，所述阳极的材料为透明导电金属氧化物，所述阴极的材料为金属。
  5. 如权利要求1所述的OLED基板的制作方法，其中，所述步骤3中，采用刀轮对所述涂布光阻层的第一基板进行切割；
    所述步骤4中，采用光阻剥离液对所述第二基板上的光阻层进行剥离；
    所述步骤5中，采用精细金属掩膜板通过蒸镀的方法在所述第三基板的数个开口内从下到上依次形成所述空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层、及阴极。
  6. 一种OLED基板，包括：衬底基板、设于所述衬底基板上且间隔设置的数个阳极、设于所述衬底基板及数个阳极上的像素定义层、设于所述像素定义层上的数个间隔物、设于所述像素定义层上且分别对应于所述数个阳极的数个开口、设于所述数个开口内且在所述阳极上从下到上依次层叠设置的空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入 层、及阴极；其中，所述像素定义层与数个间隔物的材质均为无机物。
  7. 如权利要求6所述的OLED基板，其中，所述衬底基板为TFT基板。
  8. 如权利要求6所述的OLED基板，其中，所述无机物包括氮化硅与氧化硅中的至少一种。
  9. 如权利要求6所述的OLED基板，其中，所述阳极的材料为透明导电金属氧化物，所述阴极的材料为金属。
  10. 一种OLED基板的制作方法，包括如下步骤：
    步骤1、提供一衬底基板，在所述衬底基板上形成间隔设置的数个阳极；在所述衬底基板及数个阳极上沉积一无机膜层；
    步骤2、采用半色调光罩对所述无机膜层进行图形化处理，得到像素定义层、设于所述像素定义层上的数个间隔物、及设于所述像素定义层上且分别对应于所述数个阳极的数个开口，每个开口暴露出对应的阳极的至少一部分，制得第一基板；
    步骤3、在所述第一基板上涂布一光阻层，所述光阻层覆盖所述像素定义层、数个间隔物、及阳极；
    对所述涂布光阻层的第一基板进行切割，得到数个第二基板；
    步骤4、对所述第二基板上的光阻层进行剥离，得到第三基板；
    步骤5、在所述第三基板上的数个开口内从下到上依次形成空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层、及阴极，制得一OLED基板；
    其中，所述衬底基板为TFT基板；
    其中，所述无机膜层的材料包括氮化硅与氧化硅中的至少一种。
  11. 如权利要求10所述的OLED基板的制作方法，其中，所述阳极的材料为透明导电金属氧化物，所述阴极的材料为金属。
  12. 如权利要求10所述的OLED基板的制作方法，其中，所述步骤3中，采用刀轮对所述涂布光阻层的第一基板进行切割；
    所述步骤4中，采用光阻剥离液对所述第二基板上的光阻层进行剥离；
    所述步骤5中，采用精细金属掩膜板通过蒸镀的方法在所述第三基板的数个开口内从下到上依次形成所述空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层、及阴极。
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