WO2018072057A1 - Module de circuit de protection incorporé - Google Patents

Module de circuit de protection incorporé Download PDF

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Publication number
WO2018072057A1
WO2018072057A1 PCT/CN2016/102255 CN2016102255W WO2018072057A1 WO 2018072057 A1 WO2018072057 A1 WO 2018072057A1 CN 2016102255 W CN2016102255 W CN 2016102255W WO 2018072057 A1 WO2018072057 A1 WO 2018072057A1
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WO
WIPO (PCT)
Prior art keywords
baseboard
core housing
bonding layer
layer
encapsulation layer
Prior art date
Application number
PCT/CN2016/102255
Other languages
English (en)
Inventor
Yu Tian
Cheng Hu
Bing Wang
Chuanrong MIAO
Original Assignee
Littelfuse Electronics (Shanghai) Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Littelfuse Electronics (Shanghai) Co., Ltd. filed Critical Littelfuse Electronics (Shanghai) Co., Ltd.
Priority to CN201680090155.6A priority Critical patent/CN110114868B/zh
Priority to PCT/CN2016/102255 priority patent/WO2018072057A1/fr
Priority to TW106135428A priority patent/TWI649910B/zh
Publication of WO2018072057A1 publication Critical patent/WO2018072057A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/02—Containers; Seals
    • H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
    • H01L23/053—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body
    • H01L23/057—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having an insulating or insulated base as a mounting for the semiconductor body the leads being parallel to the base
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/16—Fillings or auxiliary members in containers or encapsulations, e.g. centering rings
    • H01L23/18—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device
    • H01L23/24—Fillings characterised by the material, its physical or chemical properties, or its arrangement within the complete device solid or gel at the normal operating temperature of the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
    • H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
    • H01L2224/161—Disposition
    • H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
    • H01L2224/818—Bonding techniques
    • H01L2224/81801—Soldering or alloying
    • H01L2224/81815—Reflow soldering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495—Lead-frames or other flat leads
    • H01L23/49541—Geometry of the lead-frame
    • H01L23/49548—Cross section geometry
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H01L25/065—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00
    • H01L25/0655—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L27/00 the devices being arranged next to each other
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
    • H01L25/16—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof the devices being of types provided for in two or more different main groups of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. forming hybrid circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19041—Component type being a capacitor
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/1901—Structure
    • H01L2924/1904—Component type
    • H01L2924/19043—Component type being a resistor
    • H—ELECTRICITY
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    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
    • H01L2924/191—Disposition
    • H01L2924/19101—Disposition of discrete passive components
    • H01L2924/19105—Disposition of discrete passive components in a side-by-side arrangement on a common die mounting substrate

Definitions

  • the disclosure relates generally to battery protection devices, and more particularly, to an embedded and/or encapsulated protection circuit module (PCM) .
  • PCM protection circuit module
  • Pack-type secondary batteries have been widely used.
  • a typical pack-type secondary battery has a structure in which one or more bare cells serving as an electrical energy source and a protection circuit module (PCM) , which controls the charging/discharging of the bare cell, are combined into one unit.
  • Secondary batteries such as Ni-HM and lithium batteries, are chargeable, especially those made of lithium-ion and lithium-polymer cells, which have a higher energy density and greater voltage than conventional battery.
  • PCMs typically provide the battery with overcharging/discharging protection, short circuit protection, and thermal/over-temperature protection by controlling the voltage, current and temperature of battery.
  • a conventional PCM is a protective circuit formed by mounting various electrical components on a printed circuit board (PCB) , including active protection components, such as IC or Sensor, and passive components, such as PTC, NTC or a fuse. The various components are connected with copper track or a via hole to form the protection circuit.
  • PCB printed circuit board
  • PCM subscribes to the increasing trend of small size and high integration density, because the size of PCM is decreasing, so is the area for mounting the electrical apparatus. Therefore, how to increase the utilization area of the printed circuit board is a critical problem to be addressed, as is the ease in which client-end assembly and installation is accomplished, all while providing high reliability performance to meet demands in a rugged application environment.
  • the protection circuit including active protection components (e.g., integrated circuits or sensors) and passive protective components (e.g. PTCs, negative temperature coefficient (NTC) , are fuses) embedded and encapsulated into PCB.
  • active protection components e.g., integrated circuits or sensors
  • passive protective components e.g. PTCs, negative temperature coefficient (NTC)
  • NTC negative temperature coefficient
  • an apparatus in one approach, includes a baseboard, a plurality of protection components formed on the baseboard, and a core housing encasing the plurality of protection components.
  • the apparatus further includes an encapsulation layer positioned within the core housing and covering a first side of the baseboard, a first bonding layer formed over the encapsulation layer, and a second bonding layer formed over a second side of the baseboard.
  • the apparatus further includes a surface terminal coupled to at least one of the first bonding layer and the second bonding layer.
  • a protection circuit module includes a plurality of protection components formed on a baseboard, and a core housing entirely surrounding the baseboard.
  • the PCM further includes an encapsulation layer positioned within the core housing and covering a first side of the baseboard, a first bonding layer formed over the encapsulation layer, a second bonding layer formed over a second side of the baseboard, and a surface terminal coupled to at least one of the first bonding layer and the second bonding layer.
  • a method in yet another approach, includes providing a plurality of protection components on a baseboard, encasing the plurality of protection components within an interior of a core housing, and forming an encapsulation layer over the plurality of protection components, the encapsulation layer provided within the interior of the core housing.
  • the method may further include forming a first bonding layer over the encapsulation layer, and coupling a surface terminal to at least one of the first bonding layer and a second bonding layer.
  • FIG. 1 is an isometric view of an apparatus, such as an encapsulated PCM, according to an exemplary approach of the disclosure
  • FIG. 2 is side cross-section view of the apparatus of FIG. 1 according to an exemplary approach of the disclosure
  • FIG. 3 is an exploded view of the apparatus of FIG. 1 according to an exemplary approach of the disclosure
  • FIG. 4 depicts a process of forming the apparatus of FIG. 1 according to an exemplary approach of the disclosure
  • FIG. 5 is a perspective view of an apparatus according to another exemplary approach of the disclosure.
  • FIG. 6 is a side cross-sectional view of the apparatus of FIG. 5 according to an exemplary approach of the disclosure.
  • FIG. 7 depicts a process of forming the apparatus of FIG. 5 according to an exemplary approach of the disclosure.
  • top, ” “bottom, ” “upper, ” “lower, ” “vertical, ” “horizontal, ” “lateral, ” and “longitudinal” will be used herein to describe the relative placement and orientation of various components and their constituent parts. Said terminology will include the words specifically mentioned, derivatives thereof, and words of similar import.
  • the protection circuit including active protection components (e.g., integrated circuits or sensors) and passive protective components (e.g. PTCs, negative temperature coefficient (NTC) , or fuses) is embedded in a core housing made of PCB FR-4 material or molding case, and encapsulated with a coating, such as epoxy or encapsulation.
  • active protection components e.g., integrated circuits or sensors
  • passive protective components e.g. PTCs, negative temperature coefficient (NTC) , or fuses
  • NTCs negative temperature coefficient
  • the active and passive components are connected with a conductive layer and/or a via hole to form the protection circuit.
  • the apparatus is divided into three layers, namely a top layer, a central layer, and a bottom layer.
  • the top layer includes a top wiring layer and a top solder mask
  • the central layer embeds and encapsulates the protection components and devices, as well as contains a copper foil and via-holes to form a main circuit
  • the bottom layer includes a bottom wiring layer and a bottom solder mask.
  • One or more surfaces of the apparatus are provided with terminals or lands such that, through terminal connection, reflow soldering, welding or other methods, the apparatus can be connected to external circuits or external equipment, thus protecting the battery cell.
  • embodiments of the present disclosure may eliminate the approach of subsequent client-end surface mounting of components and devices, thus simplifying client-end assembly and installation techniques and processes, which reduces costs. Furthermore, all components and devices are encapsulated within the core housing, and a protective coating is applied, thus improving the performance of current existing products, and strengthening product reliability.
  • the apparatus 100 such as an encapsulated battery protection module, includes a baseboard 102 (e.g., a PCB) includes an insulated layer 102-A, which forms a solder mask, coupled to a conductive layer 102-B made of copper foil.
  • a plurality of protection devices 104A-F may be formed on the baseboard 102, for example, on a first side 106 (FIG. 3) of the baseboard 102, i.e., on an upper surface of the insulated layer 102-A.
  • the conductive layer 102-B may be coupled to an underside 109 of the insulated layer 102-A.
  • the first side 106 corresponds to a top surface of the baseboard 102
  • the second side 108 corresponds to a bottom surface of the baseboard 102, i.e., a lower surface of the conductive layer 102-B.
  • the plurality of protection components 104A-F are selected from the non-limiting group consisting of: fuses, PTCs, NTCs, ICs, sensors, MOSFETS, resistors, and capacitors.
  • ICs and sensors are considered to be active protection components
  • PTCs, NTCs, and fuses are considered to be passive components.
  • the protection component 104-A may be a PTC
  • the protection component 104-B may be an IC + MOSFET
  • the protection components 104-C and 104-E may be resistors
  • the protection components 104-D and 104-F are capacitors. It will be appreciated, however, that this arrangement is non-limiting, and the number and configuration of protection components may vary depending on the application.
  • the PTC material of protection component 104-A may be made of a positive temperature coefficient conductive composition comprising a polymer and a conductive filler.
  • the polymer of the PTC material may be a crystalline polymer selected from the group consisting of polyethylene, polypropylene, polyoctylene, polyvinylidene chloride and a mixture thereof.
  • the conductive filler may be dispersed in the polymer and is selected from the group consisting of carbon black, metal powder, conductive ceramic powder and a mixture thereof.
  • the PTC conductive composition may also include an additive, such as a photo initiator, cross-link agent, coupling agent, dispersing agent, stabilizer, anti-oxidant and/or nonconductive anti-arcing filler.
  • an additive such as a photo initiator, cross-link agent, coupling agent, dispersing agent, stabilizer, anti-oxidant and/or nonconductive anti-arcing filler.
  • the apparatus 100 may further include a core housing 110 encasing the plurality of protection components 104A-F.
  • the core housing 110 extends entirely around an outer perimeter of the baseboard 102.
  • the core housing 110 may have a frame 112 and a central opening 114 for receiving the baseboard 102 therein.
  • the core housing 110 may have a generally rectangular shape.
  • the core housing 110 is made from a FR-4 glass-reinforced epoxy laminate.
  • the core housing 110 is made from a ceramic or a moldable material.
  • an encapsulation layer 120 may be positioned or formed within the core housing 110 so as to cover the first side 106 of the baseboard 102, including the plurality of protection components 104A-F formed on the baseboard 102.
  • the encapsulation layer 120 may be an injectable epoxy, which is deposited within the central opening 114 so as to completely fill the central opening 114.
  • the encapsulation layer 120 may include a plurality of vias 121 provided therethrough for connection with the baseboard 102, as will be described in greater detail below.
  • the encapsulation layer 120 may be a multiple-layer structure with different layers providing different functions.
  • one exemplary 3-layer structure of the encapsulation layer 120 may include a first layer which is oxidization-resistant epoxy, a second layer that is humidity-resistant epoxy, and a third layer that is corrosion-resistant epoxy. It will be appreciated, however, that this tri-layered arrangement is non-limiting, and the number and layers of the encapsulation layer 120 may vary depending on the application.
  • a first bonding layer 122 may be formed over the encapsulation layer 120, and a second bonding layer 124 may be formed over the second side 108 of the baseboard 102.
  • the first and second bonding layer 122, 124 are directly coupled to opposite sides of the frame 112 of the core housing 110 so as to fully encapsulate the encapsulation layer 120 and the plurality of protection components 104A-F housed within the frame 112.
  • the first and second bonding layers 122, 124 are layers of epoxy, which may be provided with vias 128 and 130 formed therein, respectively.
  • the vias 128 and 130 may be formed by mechanical drilling, followed by electro or electroless plating.
  • the vias 128, 130 may be filled with a conductive paste.
  • the first and second bonding layers 122, 124 are coupled to the core housing 110, for example, by injection molding.
  • the apparatus 100 may further include one or more surface terminals 134A-D coupled to at least one of the first bonding layer 122 and the second bonding layer 124, and one or more leads 140A-B connected to the surface terminals 134A-B.
  • the surface terminals 134A-D may be a copper foil connecting the leads 140A-B to the baseboard 102 using the plurality of vias 128 formed through the first bonding layer 122 and the plurality of vias 121 formed through the encapsulation layer 120.
  • the surface terminals 134A-B may include a planar section 142 configured to be positioned atop the first bonding layer 122, and a plurality of extension members 144 configured to extend through the first bonding layer 122 and the encapsulation layer 120.
  • the baseboard 102 is provided with the plurality of protection components 104A-F formed thereon.
  • the baseboard 102 is inserted into the central opening 114 of the core housing 110 such that the core housing completely surrounds an outer perimeter 148 of the baseboard 102, and the protection components 104A-F are recessed below a top surface 149 of the frame 112 of the core housing 110.
  • the second bonding layer 124 may have already been attached to a bottom side of the core housing 110.
  • the encapsulation layer 120 is formed over the protection components 104A-F.
  • the encapsulation layer 120 is injected into the core housing 110 and takes on a shape generally defined by the frame 112. As shown, the encapsulation layer 120 has an upper surface 123, which is substantially planar or flush with the top surface 149 of the frame.
  • the first bonding layer 122 is then secured to the frame 112 of the core housing 110, as shown at process point 153, and the terminals 134A-B are formed atop the first bonding layer 122, as shown at process point 154. Finally, the leads 140A-B are secured to the apparatus atop the terminals 134A-B.
  • the apparatus 170 includes a baseboard 172, which may be a conductive component, such as a lead frame.
  • a plurality of protection components 174A-H may be formed directly on the baseboard 172, for example, on a first side 176 of the baseboard 172.
  • the first side 176 corresponds to a top surface of the baseboard 172
  • the second side 178 corresponds to a bottom surface of the baseboard 172.
  • the plurality of protection components 174A-H are selected from the non-limiting group consisting of: fuses, PTCs, NTCs, ICs, sensors, MOSFETS, resistors, and capacitors.
  • ICs and sensors are considered to be active protection components
  • PTCs, NTCs, and fuses are considered to be passive components.
  • the protection component 174-A may be a PTC
  • the protection component 174-C may be an IC + MOSFET
  • the protection components 174-B and 174D-H may be a combination of resistors and capacitors. It will be appreciated, however, that this arrangement is non-limiting, and the number and configuration of protection components may vary depending on the application.
  • the PTC material of protection component 174-A may be made of a positive temperature coefficient conductive composition comprising a polymer and a conductive filler.
  • the polymer of the PTC material may be a crystalline polymer selected from the group consisting of polyethylene, polypropylene, polyoctylene, polyvinylidene chloride and a mixture thereof.
  • the conductive filler may be dispersed in the polymer and is selected from the group consisting of carbon black, metal powder, conductive ceramic powder and a mixture thereof.
  • the PTC conductive composition may also include an additive, such as a photo initiator, cross-link agent, coupling agent, dispersing agent, stabilizer, anti-oxidant and/or nonconductive anti-arcing filler.
  • an additive such as a photo initiator, cross-link agent, coupling agent, dispersing agent, stabilizer, anti-oxidant and/or nonconductive anti-arcing filler.
  • the apparatus 170 may further include a core housing 180 encasing the plurality of protection components 174.
  • the core housing 180 may extend partially around the baseboard 172 such that first and second ends 181, 183 extend from opposite sides of the core housing 180, as shown.
  • the core housing 180 may have a generally rectangular shape.
  • the core housing 180 is made from epoxy, which is injection molded around the baseboard 172.
  • the first and second ends 181 and 183 represent terminals for the apparatus 170. Additional terminal connections 188 and 189 for protection components 174-A and 174-C may also be provided through a lower side 190 of the core housing for connection to external circuits or external equipment, as best shown in FIG. 6.
  • the core housing 180 may cover the first side 176 of the baseboard 172 and the second side of 178 of the baseboard 172, including the plurality of protection components 174 formed thereon.
  • the core housing 180 may be an injectable epoxy, which is formed into the desired shape.
  • FIG. 7 an exemplary process for assembling the apparatus 170 shown in FIGS. 5-6 will be described in greater detail.
  • the baseboard 172 with a plurality of sections is provided.
  • the plurality of protection components 174A-H are formed on the first side 176 of the baseboard 172.
  • the core housing 180 is formed over the protection components 174A-F and partially over the baseboard 172.
  • the first and second ends 181 and 183 which represent terminals for the apparatus 170, extend from each side of the core housing.
  • a first advantage includes an apparatus that simplifies client-end assembly and installation techniques and processes.
  • a second advantage includes an enhanced reliability in practical applications of the battery protection circuit due to the encapsulated core housing surrounding the baseboard.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Dispersion Chemistry (AREA)
  • Battery Mounting, Suspending (AREA)

Abstract

L'invention concerne des approches pour incorporer un module de protection de batterie. Dans une approche, un appareil comprend une plaque de base, une pluralité de composants de protection formés sur une plaque de base, et un boîtier central renfermant la pluralité de composants de protection. L'appareil comprend en outre une couche d'encapsulation positionnée à l'intérieur du boîtier central et recouvrant un premier côté de la plaque de base, une première couche de liaison formée sur la couche d'encapsulation, et une seconde couche de liaison formée sur un second côté de la plaque de base. L'appareil comprend en outre une borne de surface couplée à la première couche de liaison et/ou à la seconde couche de liaison. Une surface externe des première et/ou seconde couches de liaison comprend des bornes ou des méplats. Par l'intermédiaire d'une connexion de borne, d'un brasage par refusion ou d'autres procédés, l'appareil peut être connecté à des circuits externes ou à un équipement externe.
PCT/CN2016/102255 2016-10-17 2016-10-17 Module de circuit de protection incorporé WO2018072057A1 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201680090155.6A CN110114868B (zh) 2016-10-17 2016-10-17 嵌入式保护电路模块
PCT/CN2016/102255 WO2018072057A1 (fr) 2016-10-17 2016-10-17 Module de circuit de protection incorporé
TW106135428A TWI649910B (zh) 2016-10-17 2017-10-17 埋入式保護電路模組及其製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/CN2016/102255 WO2018072057A1 (fr) 2016-10-17 2016-10-17 Module de circuit de protection incorporé

Publications (1)

Publication Number Publication Date
WO2018072057A1 true WO2018072057A1 (fr) 2018-04-26

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/102255 WO2018072057A1 (fr) 2016-10-17 2016-10-17 Module de circuit de protection incorporé

Country Status (3)

Country Link
CN (1) CN110114868B (fr)
TW (1) TWI649910B (fr)
WO (1) WO2018072057A1 (fr)

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JP2006004773A (ja) * 2004-06-17 2006-01-05 Mitsumi Electric Co Ltd 電池保護回路モジュール
CN101901799A (zh) * 2009-05-25 2010-12-01 晟铭电子科技股份有限公司 集成电路封装结构及封装方法
CN103456978A (zh) * 2012-05-31 2013-12-18 三星Sdi株式会社 可再充电电池包
CN105264691A (zh) * 2013-04-17 2016-01-20 Itm半导体有限公司 电池保护电路模块封装
CN105448846A (zh) * 2015-12-23 2016-03-30 江苏宏微科技股份有限公司 低电感轻薄型功率模块

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Publication number Priority date Publication date Assignee Title
TW487272U (en) * 2001-03-20 2002-05-11 Polytronics Technology Corp Multilayer circuit boards
KR101059756B1 (ko) * 2009-05-08 2011-08-26 주식회사 엘지화학 신규한 구조의 이차전지 팩
KR101602832B1 (ko) * 2014-05-15 2016-03-11 주식회사 아이티엠반도체 Nfc 안테나를 포함하는 배터리 보호회로 패키지 및 이를 구비하는 배터리 팩

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006004773A (ja) * 2004-06-17 2006-01-05 Mitsumi Electric Co Ltd 電池保護回路モジュール
CN101901799A (zh) * 2009-05-25 2010-12-01 晟铭电子科技股份有限公司 集成电路封装结构及封装方法
CN103456978A (zh) * 2012-05-31 2013-12-18 三星Sdi株式会社 可再充电电池包
CN105264691A (zh) * 2013-04-17 2016-01-20 Itm半导体有限公司 电池保护电路模块封装
CN105448846A (zh) * 2015-12-23 2016-03-30 江苏宏微科技股份有限公司 低电感轻薄型功率模块

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TW201830765A (zh) 2018-08-16
CN110114868B (zh) 2023-06-27
CN110114868A (zh) 2019-08-09
TWI649910B (zh) 2019-02-01

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