WO2018059358A1 - 一种光学测量装置和方法 - Google Patents

一种光学测量装置和方法 Download PDF

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Publication number
WO2018059358A1
WO2018059358A1 PCT/CN2017/103232 CN2017103232W WO2018059358A1 WO 2018059358 A1 WO2018059358 A1 WO 2018059358A1 CN 2017103232 W CN2017103232 W CN 2017103232W WO 2018059358 A1 WO2018059358 A1 WO 2018059358A1
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WIPO (PCT)
Prior art keywords
optical
substrate stage
measuring
mark
optical detecting
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PCT/CN2017/103232
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English (en)
French (fr)
Inventor
李煜芝
徐兵
杨志勇
周畅
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上海微电子装备（集团）股份有限公司
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Priority to US16/338,636 priority Critical patent/US10907952B2/en
Priority to JP2019517364A priority patent/JP6794538B2/ja
Priority to SG11201902868TA priority patent/SG11201902868TA/en
Priority to KR1020197012399A priority patent/KR102214365B1/ko
Publication of WO2018059358A1 publication Critical patent/WO2018059358A1/zh

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    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/002—Measuring arrangements characterised by the use of optical techniques for measuring two or more coordinates
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G03F7/70633—Overlay, i.e. relative alignment between patterns printed by separate exposures in different layers, or in the same layer in multiple exposures or stitching
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G01B11/06—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material
    • G01B11/0616—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness for measuring thickness ; e.g. of sheet material of coating
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G01B11/02—Measuring arrangements characterised by the use of optical techniques for measuring length, width or thickness
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70605—Workpiece metrology
    • G03F7/70616—Monitoring the printed patterns
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/70775—Position control, e.g. interferometers or encoders for determining the stage position
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H01L21/682—Mask-wafer alignment

Definitions

  • the present invention relates to the field of semiconductors, and more particularly to an optical measuring apparatus and method.
  • Photolithography is to expose and develop a line on a substrate on which a photoresist has been applied, and to perform photolithography again on a substrate that has been subjected to photolithography.
  • the factors affecting the lithography precision mainly include the positional deviation of the substrate and the mask, the line width of the lithographic forming line, the thickness of the photoresist itself, and the deviation of the etch.
  • optical measuring equipment on the market includes a measuring device in which a film thickness measuring device and a position and a set of deviation deviations are integrated.
  • a film thickness measuring device in which a substrate to be tested is placed on a substrate stage, and a gantry is placed above the substrate stage, and the film thickness is measured.
  • the head is mounted on the slider to move on the gantry to measure the thickness of the film on the substrate.
  • the above device further comprises a position adjusting unit, that is, a position and a set deviation measuring device.
  • the current position and the set deviation measuring device adopt a bridge type or a gantry structure, and each moving direction has a measuring interferometer for measuring control, and the non-moving direction is not measured. Interferometer configuration. The position correction therein is corrected using a large mask covering the entire measurement stroke.
  • Standard deviation devices are currently on the market, and to maintain measurement accuracy, a larger mask is used for periodic calibration.
  • the maintenance is inconvenient, the equipment manufacturer needs to be calibrated, and the reticle is manually uploaded;
  • the reticle is manually uploaded;
  • the size of the substrate in the slab increases, the size of the subsequent reticle needs to be increased at the same time, and there are limitations;
  • the third is that as the size increases, the device The range of motion or the size of the device itself also becomes larger, which inevitably makes the error more obvious, increases the error value, and affects the measurement.
  • the invention provides an optical measuring device and method, which can calculate the tilting amount of the instrument during the measurement into the error, improve the precision of the measurement, and solve the above problem.
  • the present invention provides an optical measuring device comprising a substrate carrier for use Depositing a substrate; an optical detection stage frame for carrying and supporting an optical detection slider above the substrate stage, the optical detection slider being slidable along the optical detection stage frame; a detecting unit, located above the substrate stage and fixed on the optical detecting slider, wherein the optical detecting unit includes a mark position measuring module as the optical detecting slider moves along the optical detecting stage frame a substrate stage position measuring module for measuring a position of the substrate stage; an optical detecting unit position measuring module for measuring a position of the optical detecting unit; and a correction module according to the substrate stage a position and a position of the optical detecting unit obtain a mark position measurement deviation caused by movement of the substrate stage and the optical detecting unit, and measure the mark position measurement module based on the mark position measurement deviation The position of the mark is corrected.
  • the substrate stage position measuring module includes a substrate stage Y-direction measuring component and a substrate stage X-direction measuring component, and the substrate stage Y measures the Y-direction displacement amount of the substrate stage to the measuring component.
  • the substrate stage X measures the X-direction shift amount of the substrate stage Y in the movement toward the measuring unit.
  • the optical detecting unit position measuring module comprises an optical detecting unit X to the measuring component, the optical detecting slider X to the measuring component, and the optical detecting unit Y to the measuring component, the optical detecting unit X measuring the optical to the measuring component Detecting an X-direction displacement amount of the unit, the optical detecting slider X measuring an X-direction displacement amount of the optical detecting slider to a measuring component, the optical detecting unit Y measuring unit for measuring the optical detecting unit X direction The Y-direction offset of the optical detection unit relative to the optical detection stage frame during motion.
  • the substrate stage Y is an interferometer for both the measurement unit and the substrate stage X to the measurement unit.
  • the optical detecting unit X employs an interferometer to the measuring assembly and the optical detecting slider X to the measuring assembly
  • the optical detecting unit Y employs a laser displacement sensor to the measuring assembly.
  • the optical detecting unit further comprises a height adjustment module for measuring the distance between the optical detecting unit and the upper surface of the substrate.
  • the substrate stage is further provided with a reference plate with a calibration mark for correcting the substrate stage position and the optical detecting unit position.
  • said reference plate with a calibration mark comprises a lateral reference plate and a longitudinal reference plate perpendicular to said lateral reference plate, said transverse reference plate being disposed along said substrate stage X direction for calibrating said
  • the substrate is offset from the Y-direction of the optical detecting unit when the optical detecting unit moves in the X direction, and the longitudinal reference plate is arranged along the Y-direction of the substrate stage for calibrating the substrate carrier to move in the Y direction
  • the substrate is offset from the X-direction position of the optical detecting unit.
  • the optical measuring device further comprises a support base for carrying the substrate stage and the optical detection stage frame.
  • the support base includes a shock absorbing unit and marble from bottom to top.
  • the optical detecting unit is further configured to detect a graphic line width, a registration deviation, a mark position deviation, and/or a photoresist glue thickness on the substrate after exposure.
  • the present invention also provides an optical measuring method, wherein a direction in which the optical detecting slider moves along the optical detecting stage frame is defined as an X direction, and a direction perpendicular to the X direction in a horizontal plane is defined as a Y direction, a vertical direction Defined as Z direction, the XYZ three-dimensional coordinate system is established, which is characterized in that it comprises the following steps:
  • the optical detecting unit moves in the X direction, so that any detection mark i is located under the mark position measuring module, and the mark position measuring module measures the detection mark i relative to the mark
  • the alignment deviation of the center of the position measurement module (dxi_align, dyi_align);
  • the substrate stage Y measures the Y-displacement amount Yi of the substrate stage and the rotation amount Rzy_wsi around the ZY plane and the inclination amount Rx_wsi around the X-axis, and the substrate stage X measures the substrate load to the measuring component.
  • the X-direction shift amount X_wsi of the substrate stage when the stage moves to the position Yi and then the X-direction shift amount X_wsi of the substrate stage and the rotation amount around the ZY plane when the substrate stage moves to the position Yi Rzy_wsi and the amount of tilt Rx_wsi around the X axis, calculating the alignment deviation (dxi_align1, dyi_align1) of the detection mark i relative to the center of the mark position measuring module caused when the substrate stage moves to the position Yi;
  • the optical detecting unit X measures the X-direction displacement amount Xi of the optical detecting unit to the measuring component
  • the optical detecting slider X measures the X-direction displacement amount X'i of the optical detecting slider and the ZX plane around the ZX plane to the measuring component.
  • the optical detecting unit Y measures the Y-offset amount Y_omi of the optical detecting unit with respect to the optical detecting stage frame and the tilt amount Rx_omi about the X-axis when the optical detecting unit moves to the position Xi, to the measuring component, Calculating the optical when the optical detecting unit moves to the position Xi according to the X-direction displacement amount Xi of the optical detecting unit and the X-direction displacement amount X'i of the optical detecting slider Detecting the tilt amount Ry_omi of the unit about the Y axis, and then according to the rotation amount Rzx_omi of the optical detecting unit about the ZX plane and the tilt amount Ry_omi about the Y axis when the optical detecting unit moves to the position Xi, and the optical detecting unit is opposite a Y-direction offset amount Y_omi of the optical detection stage frame and an inclination amount Rx_om
  • the alignment deviation (dxi_align2, dyi_align2) of the detection mark i with respect to the center of the mark position measurement module corrects the alignment deviation (dxi_align, dyi_align) of the detection mark i with respect to the center of the mark position measurement module.
  • the alignment deviation (dxi_align1, dyi_align1) of the detection mark i relative to the center of the mark position measurement module caused when the substrate stage moves to the position Yi is calculated according to the following formula:
  • Dxi_align1 X_wsi+A_ws ⁇ Rzy_wsi;
  • Dyi_align1 B_ws ⁇ Rzy_wsi+H_ws ⁇ Rx_wsi;
  • A_ws is a deviation of the center of the measurement spot projected onto the substrate stage from the substrate stage X toward the substrate stage in the Y direction;
  • B_ws is a deviation of the center of the measurement spot projected onto the substrate stage from the substrate stage Y toward the substrate stage in the X direction;
  • H_ws is the distance between the center of the measurement spot projected onto the substrate stage by the substrate stage Y to the measurement stage and the optimal focal plane of the mark position measurement module in the Z direction;
  • the alignment deviation (dxi_align2, dyi_align2) of the detection mark i relative to the center of the mark position measurement module caused when the optical detection unit moves to the position Xi is calculated according to the following formula:
  • Dxi_align2 A_om ⁇ Rzx_omi+H_om ⁇ Ry_omi;
  • Dyi_align2 Y_omi+B_om ⁇ Rzx_omi+H'_om ⁇ Rx_omi;
  • A_om is a deviation of the center of the measurement spot projected onto the optical detection unit from the optical detection unit X to the optical detection unit and the rotation center of the optical detection unit in the Y direction;
  • B_om is a deviation of the center of the measurement spot projected onto the optical detection unit from the optical detection unit Y to the optical detection unit and the rotation center of the optical detection unit in the X direction;
  • H_om is a distance in the Z direction from the center of the measurement spot projected onto the optical detection unit by the optical detection unit X to the measurement component and the optimal focal plane of the mark position measurement module;
  • H'_om is the distance in the Z direction from the center of the measurement spot projected onto the optical detection slider by the optical detection slider X to the measurement assembly and the optimal focal plane of the marker position measurement module.
  • the calibration of the substrate stage position and the position of the optical detecting unit is further included, and specifically includes the following steps:
  • the mark position measuring module measures the position of the calibration mark j, and calculates an alignment deviation (dxj_align, dyj_align) of the calibration mark j with respect to the mark position measuring module;
  • the substrate stage Y measures the Y-direction displacement amount Yj of the substrate stage and the rotation amount Rzy_wsj around the ZY plane and the inclination amount Rx_wsj around the X-axis, and the substrate stage X measures the substrate load to the measurement component.
  • the X-direction shift amount X_wsj of the substrate stage when the stage moves to the position Yj and then the X-direction shift amount X_wsj of the substrate stage and the rotation amount around the ZY plane when the substrate stage moves to the position Yj Rzy_wsj and the amount of tilt Rx_wsj around the X axis, calculating the alignment deviation (dxj_align1, dyj_align1) of the calibration mark j relative to the center of the mark position measuring module caused when the substrate stage moves to the position Yj;
  • the optical detecting unit X measures the X-direction displacement amount Xj of the optical detecting unit to the measuring component
  • the optical detecting slider X measures the X-direction displacement amount X'j of the optical detecting slider and the amount of rotation about the ZX plane to the measuring component Rzx_omj
  • the optical detecting unit Y measures the Y-offset Y_omj of the optical detecting unit relative to the optical detecting stage frame and the tilting amount Rx_omj around the X-axis when the optical detecting unit moves to the position Xj to the measuring component, according to
  • the X-direction displacement amount Xj of the optical detecting unit and the X-direction displacement amount X'j of the optical detecting slider calculate the tilt amount Ry_omj of the optical detecting unit about the Y-axis when the optical detecting unit moves to the position Xj, and then according to the The rotation amount Rzx_omj of the optical detecting unit about the ZX plane and the
  • the alignment residual ⁇ Xi of the reference plate relative to the mark position measurement module center is compensated to the detection mark i caused by the substrate stage moving to the position Yi.
  • the alignment deviation (dxi_align1, dyi_align1) of the center of the mark position measuring module the alignment residual ⁇ Yi of the reference plate with respect to the center of the mark position measuring module at the position Xi is compensated to the optical at the position Xi
  • the alignment residual ⁇ Xi of the reference plate relative to the center of the mark position measuring module when the substrate stage is at the position Yi is compensated to the state caused when the substrate stage moves to the position Yi according to the following formula
  • Dxi_align1 X_wsi+A_ws ⁇ Rzy_wsi+ ⁇ Xi;
  • Dyi_align1 B_ws ⁇ Rzy_wsi+H_ws ⁇ Rx_wsi;
  • A_ws is a deviation of the center of the measurement spot projected onto the substrate stage from the substrate stage X toward the substrate stage in the Y direction;
  • B_ws is a deviation of the center of the measurement spot projected onto the substrate stage from the substrate stage Y toward the substrate stage in the X direction;
  • H_ws is the distance between the center of the measurement spot projected onto the substrate stage by the substrate stage Y to the measurement stage and the optimal focal plane of the mark position measurement module in the Z direction;
  • the alignment residual ⁇ Yi of the reference plate relative to the center of the mark position measuring module at the position Xi is compensated to the state caused when the optical detecting unit moves to the position Xi according to the following formula
  • the alignment deviation (dxi_align2, dyi_align2) of the detection mark i with respect to the center of the mark position measurement module is compensated to the following formula
  • Dxi_align2 A_om ⁇ Rzx_omi+H_om ⁇ Ry_omi;
  • Dyi_align2 Y_omi+B_om ⁇ Rzx_omi+H'_om ⁇ Rx_omi+ ⁇ Yi;
  • A_om is a deviation of the center of the measurement spot projected onto the optical detection unit from the optical detection unit X to the optical detection unit and the rotation center of the optical detection unit in the Y direction;
  • B_om is a deviation of the center of the measurement spot projected onto the optical detection unit from the optical detection unit Y to the optical detection unit and the rotation center of the optical detection unit in the X direction;
  • H_om is a distance in the Z direction from the center of the measurement spot projected onto the optical detection unit by the optical detection unit X to the measurement component and the optimal focal plane of the mark position measurement module;
  • H'_om is the distance in the Z direction from the center of the measurement spot projected onto the optical detection slider by the optical detection slider X to the measurement assembly and the optimal focal plane of the marker position measurement module.
  • a Y-direction reference plate parallel to the Y-direction is disposed on the substrate stage for measuring alignment misalignment of the reference plate relative to the center of the mark position measurement module when the substrate stage is at the position Yi a difference ⁇ Xi; an X-direction reference plate parallel to the X-direction is disposed on the substrate stage for measuring an alignment residual of the reference plate relative to the center of the mark position measuring module when the optical detecting unit is at the position Xi The difference ⁇ Yi.
  • the method further comprises: measuring a height value Z1 of the mark position measuring module from the detection mark at this time;
  • the vertical movement dZ of the marker position measuring module is controlled such that the detection marker is located at the optimal focal plane of the marker position measuring module.
  • the invention provides an optical measuring device and method, which are provided with a device capable of measuring an amount of tilt generated by an optical detecting unit and a substrate stage during movement, and combining the displacement of the optical detecting module and the substrate stage according to the tilt amount data
  • the coordinates of the position are calculated and corrected.
  • the above-mentioned device and method are used to correct the relevant data measured at the point, thereby improving the accuracy of the position measurement of the mark, thus solving the large size in the measurement.
  • the problem of large errors caused by the substrate is provided with a scanning reference plate and a non-scanning reference plate, which can facilitate automatic calibration of the device itself and improve convenience.
  • FIG. 1 is a schematic structural view of an optical measuring device provided by the present invention.
  • Figure 2 is a plan view of Figure 1;
  • FIG. 3 and FIG. 4 are schematic diagrams showing the distribution of mark points on the substrate for measuring deviation according to the present invention.
  • the X-direction is horizontally to the right
  • the Y-direction is perpendicular to the paper-inward direction
  • the Z-direction is vertically upward
  • an XYZ three-dimensional coordinate system is established.
  • the invention provides a correctable measuring device, comprising a supporting base 1 for carrying the entire correctable measuring device, the supporting base comprising a ground contacting the ground from bottom to top, for reducing the influence of ground vibration on the machine measurement
  • the vibration unit and the marble table for setting the X-direction and Y-direction drive mechanisms.
  • the support base 1 is a square mesa, and a substrate stage 6 is disposed at the center thereof.
  • the substrate stage 6 is mainly used for placing the substrate 9, and a plurality of kinds of substrates for aligning the substrate 9 are placed around the substrate 9.
  • the reference plate 7, the reference plate 7 includes an X-direction reference plate 72 for aligning the substrate 9 in the X direction, that is, a lateral reference plate, and a Y-direction reference plate 73 for aligning the substrate 9 in the Y direction, that is, a longitudinal reference plate,
  • the X-direction reference plate 72 and the Y-direction reference plate 73 are provided with periodically distributed alignment marks for periodically correcting the positional deviation; the line width calibration reference plate 71 is for calibrating the first position fine measurement and line width measuring sensor 5b, The line width measurement deviation of the second position fine measurement and line width measuring sensor 5c ensures the line width measurement accuracy.
  • an optical detection stage frame 2 is disposed above the substrate stage 6, and the optical detection stage frame 2 is a gantry which extends upward from the side of the substrate stage 6 in the Z direction by a certain height. Extending in the X direction to the opposite side of the substrate stage 6, and then extending down the Z direction onto the support base 1.
  • An optical detecting slider 3 movable along the optical detecting stage frame 2 is disposed on the optical detecting stage frame 2, that is, the optical detecting slider 3 is mounted on the optical detecting stage frame 2 and is movable along the X direction.
  • An optical detecting unit, that is, an optical detecting module 5 is disposed under the optical detecting slider 3, and the optical detecting module 5 includes a parameter detecting module and a mark position measuring module, specifically a mark position measuring module disposed under the optical detecting module 5.
  • the line width measuring module and the photoresist glue thickness measuring module combine the above three measuring modules on one optical detecting module 5, and when the optical detecting module 5 is in optical inspection
  • any combination of the above three measurement modules may be selected for measurement, or may be separately measured.
  • the three measurement modules can simultaneously correspond to the same position, which is more advantageous for analysis, and is particularly advantageous for analyzing line line width and glue thickness correlation.
  • a height adjustment module that is, a vertical motion mechanism control unit 4 mounted on one side of the optical detection module 5, is provided on the optical detection module 5, and the module can control the optical detection module 5 in the Z direction with respect to the optical detection slider 3. The movement thus adjusts the height of the optical detection module 5 relative to the substrate 9.
  • the parameter detecting module and the marking position measuring module are disposed on the lower surface of the optical detecting module 5 as:
  • the position coarse measuring sensor 5a is for measuring the deviation of the substrate 9 with respect to the substrate stage 6, ensuring that the substrate mark 91 on the substrate 9 is located at the first position and the line width measuring sensor 5b, the second position measuring and the line width measuring Within the field of view of sensor 5c;
  • a first position fine line and line width measuring sensor 5b for measuring a deviation of the substrate mark 91, a line width of the feature line size of the photoresist line, and a registration deviation;
  • the second position fine measurement and line width measuring sensor 5c is for measuring the positional deviation of the substrate mark 91, the line width of the feature line size of the photoresist line, and the registration deviation, which is symmetrical with the first position fine measurement and line width measuring sensor 5b Provided, and with respect to the first position fine line and line width measuring sensor 5b, the second position fine line and line width measuring sensor 5c is aligned with a small field of view, and the line width of the feature size of the smaller photoresist line can be measured;
  • the glue thickness measuring sensor 5d is for measuring the thickness of the photoresist on the substrate 9 or on the reference plate 7 or on the silicon wafer, and the sensor is symmetrically disposed with respect to the position coarse measuring sensor 5a.
  • first height measuring sensor 5e and a second height measuring sensor 5f both for measuring the height of the upper surface of the substrate 9, and the two are respectively disposed at the first position fine measuring and line width measuring sensor 5b, the second position
  • the fine measurement and line width measuring sensors 5c are close to one end of the substrate 9 and are symmetrical to each other.
  • the optical measuring device further includes a substrate stage position measuring module for measuring the position of the substrate stage 6, the substrate stage position measuring module comprising a substrate stage Y-direction measuring component and a substrate stage X-direction measuring component, the substrate
  • the stage Y measures the Y-direction displacement amount of the substrate stage to the measuring component
  • the substrate stage X measures the X-direction shift amount of the substrate stage Y in the moving direction to the measuring component, which is specifically :
  • the substrate stage X interferometer control measurement system 61 that is, the substrate stage X-direction measurement unit, controls the movement of the substrate stage 6 in the X direction, and simultaneously measures the X position X_ws of the substrate stage 6 and the rotation about the XZ plane.
  • the reference stage Y interferometer control measurement system 62 that is, the substrate stage Y-direction measurement component, is used to control the movement of the substrate stage 6 in the Y direction, measure the Y position Y_ws of the substrate stage 6 at this time, and simultaneously measure the substrate load.
  • the substrate stage X interferometer control measurement system 61 and the reference stage Y interferometer control measurement system 62 are respectively disposed in the X direction and the Y direction of the substrate stage 6, both of which use an interferometer;
  • the optical measuring device further comprises an optical detecting unit position measuring module for measuring the position and deviation of the optical detecting module 5 itself, comprising an optical detecting unit X measuring unit, an optical detecting slider X measuring unit and an optical detecting unit Y measuring unit , Specifically:
  • the module X interferometer control measurement system 51 that is, the optical detection unit X to the measurement component, is disposed on the optical detection module 5 for measuring the displacement amount X_om of the optical detection module 5 in the X direction and controlling the optical detection module 5 in the X direction Movement, the module X interferometer control measurement system 51 and the slider X interferometer control measurement system 52 are connected to each other, and the data measured by the two are subjected to parameter processing, and the tilt amount Ry_om of the optical detection module 5 can be obtained;
  • the slider X interferometer control measurement system 52 that is, the optical detection slider X toward the measurement component, is disposed on the optical detection slider 3, and can measure the rotation amount Rzx_om of the optical detection module 5 on the XZ plane;
  • the module Y interferometer control measurement system 53 that is, the optical detection unit Y to the measurement component, is disposed on the optical detection module 5 for measuring the Y-direction displacement amount Y_om and the tilt amount of the optical detection module 5 with respect to the optical detection stage frame 2.
  • Rx_om the optical detecting unit X employs an interferometer to the measuring component and the optical detecting slider X to the measuring component
  • the optical detecting unit Y employs a laser displacement sensor to the measuring component.
  • a substrate temperature control unit 8 is further disposed on the substrate stage 6, which is a constant temperature system disposed under the substrate 9.
  • the substrate stage 6 which is a constant temperature system disposed under the substrate 9.
  • the target temperature which reduces the time that the substrate 9 waits for it to reach the target temperature before testing, and improves production efficiency.
  • all of the above-mentioned modules for detecting data or The unit or system is connected with a parameter processing unit in a control system, and the parameter processing unit processes the detected data, and the feedback is sent to the corresponding position control system after the processing is completed, such as feedback to the vertical mechanism control unit 4, and the module X interferometer control.
  • a correction module is further provided, and the position measurement of the substrate mark 91 caused by the movement of the substrate stage 6 and the optical detecting unit is obtained according to the position of the substrate stage 6 and the position of the optical detecting unit. The deviation is then corrected for the position of the substrate mark 91 measured by the mark position measuring module.
  • the position measuring device further comprises a frame measuring unit for measuring the amount of deformation on the optical detecting stage frame 2, in particular a frame Y-interferometer measuring system 21, 22 which is symmetrical about the substrate stage 6
  • the frame measuring unit when the substrate stage 6 moves in the Y direction, the frame Y to the interferometer measuring systems 21, 22 can measure the deformation amount Yref and the rotational deformation amount Rzref of the optical detecting stage frame 2, and the substrate stage X interferometer
  • the control measurement system 61 and the reference stage Y interferometer control measurement system 62 correct the position of the substrate stage 6 at the alignment timing based on the above data, thereby completing the correction function.
  • the present invention also provides a measuring method using the above-described correctable measuring device, when the optical detecting module 5 is moved on the optical detecting stage frame 2 to a certain point on the corresponding substrate 9, the substrate 9 is measured using the position measuring device.
  • the position and deviation of the substrate stage 6, the optical detecting slider 3, and the optical detecting module 5, and the amount of tilt generated by the optical detecting module 5 during the movement, are corrected according to the amount of tilt, and specifically include the following steps. :
  • the substrate stage Y is provided to the measuring unit, that is, the reference stage Y interferometer control measuring system 62 measures the Y-direction displacement amount Yi of the substrate stage 6 and the rotation amount Rzy_wsi around the ZY plane and the tilt amount Rx_wsi around the X-axis
  • the substrate stage X to the measurement unit that is, the substrate stage X interferometer control measurement system 61 measures the X-direction offset amount X_wsi of the substrate stage 6 when the substrate stage moves to the position Yi, and then according to the substrate When the stage 6 moves to the position Yi, the X-direction shift amount X_wsi of the substrate stage 6, the rotation amount Rzy_wsi around the ZY plane, and the tilt amount Rx_wsi around the X-axis, when the substrate stage 6 is moved to the position Yi, is calculated. Alignment deviation of the detection mark i with respect to the center of the mark position measurement module (dxi_align1, dyi_align1);
  • the optical detecting unit X is arranged to measure the X-direction displacement amount Xi of the optical detecting unit to the measuring component, that is, the module X interferometer control measuring system 51, and the optical detecting slider X to the measuring component, that is, the slider X interferometer controlling the measuring system 52 Measuring the X-direction displacement amount X'i of the optical detecting slider and the rotation amount Rzx_omi around the ZX plane, the optical detecting unit Y measuring the optical detecting unit, that is, the optical, to the measuring component, that is, the module Y interferometer controlling measuring system 53
  • the alignment deviation (dxi_align2, dyi_align2) of the detection mark i with respect to the center of the mark position measurement module corrects the alignment deviation (dxi_align, dyi_align) of the detection mark i with respect to the center of the mark position measurement module.
  • the alignment deviation (dxi_align1, dyi_align1) of the detection mark i relative to the center of the mark position measurement module caused when the substrate stage 6 is moved to the position Yi is calculated, specifically:
  • Dxi_align1 X_wsi+A_ws ⁇ Rzy_wsi;
  • Dyi_align1 B_ws ⁇ Rzy_wsi+H_ws ⁇ Rx_wsi;
  • A_ws is a deviation of the center of the measurement spot projected onto the substrate stage 6 from the substrate stage X to the measurement unit, that is, the reference stage X interferometer control measurement system 61, and the rotation center of the substrate stage in the Y direction;
  • B_ws is a deviation of the center of the measurement spot projected onto the substrate stage 6 by the reference stage Y interferometer control measurement system 62 from the center of rotation of the substrate stage 6 in the X direction;
  • H_ws is the best focal plane of the measurement spot center and the mark position measuring module projected onto the substrate stage 6 in the Z direction by the substrate stage Y to the measurement component, that is, the reference stage Y interferometer control measurement system 62. distance;
  • the calculation of the alignment deviation (dxi_align2, dyi_align2) of the detection mark i relative to the center of the mark position measurement module caused by the movement of the optical detection unit to the position Xi is specifically as follows:
  • Dxi_align2 A_om ⁇ Rzx_omi+H_om ⁇ Ry_omi;
  • Dyi_align2 Y_omi+B_om ⁇ Rzx_omi+H'_om ⁇ Rx_omi;
  • A_om is a deviation of the center of the measurement spot projected onto the optical detection unit from the optical detection unit X to the measurement component, that is, the module X interferometer control measurement system 51, and the rotation center of the optical detection unit in the Y direction;
  • B_om is a deviation of the center of the measurement spot projected onto the optical detection unit from the optical detection unit Y toward the measurement component, that is, the module X interferometer control measurement system 51, and the rotation center of the optical detection unit in the X direction;
  • H_om is the distance in the Z direction of the best focal plane of the measuring spot center and the marking position measuring module projected onto the optical detecting unit by the optical detecting unit X to the measuring component, that is, the module X interferometer controlling measuring system 51;
  • H'_om is the best focal plane of the measurement spot center and the mark position measurement module projected onto the optical detection slider 3 by the optical detection slider X to the measurement component, that is, the slider X interferometer control measurement system 52 Z distance.
  • the method further includes calibrating the substrate stage position and the optical detecting unit position, and specifically includes the following steps:
  • the mark position measuring module measures the position of the calibration mark j, and calculates an alignment deviation (dxj_align, dyj_align) of the calibration mark j with respect to the center of the mark position measuring module;
  • the reference stage Y interferometer control measurement system 62 measures the amount of rotation Yzy of the Y-direction displacement amount Yj of the substrate stage 6 about the ZY plane and the amount of tilt Rx_wsj around the X-axis, and the substrate stage X interferometer controls the measurement system 61 to measure The X-direction shift amount X_wsj of the substrate stage when the substrate stage moves to the position Yj, and then the X-direction shift amount X_wsj of the substrate stage 6 when the substrate stage 6 is moved to the position Yj, Calculating the alignment deviation (dxj_align1) of the calibration mark j with respect to the center of the mark position measuring module caused by the movement of the substrate stage 6 to the position Yj by the rotation amount Rzy_wsj around the ZY plane and the tilt amount Rx_wsj around the X axis.
  • Dyj_align1 ;
  • the module X interferometer control measurement system 51 measures the X-direction displacement amount Xj of the optical detection unit
  • the slider X interferometer control measurement system 52 measures the X-direction displacement amount X'j of the optical detection slider 3 and the ZX plane.
  • the amount of rotation Rzx_omj the module Y interferometer control measurement system 53 measures the Y-offset Y_omj of the optical detecting unit relative to the optical detecting stage frame 2 and the tilt around the X-axis when the optical detecting unit moves to the position Xj
  • the amount Rx_omj is calculated according to the X-direction displacement amount Xj of the optical detecting unit and the X-direction displacement amount X'j of the optical detecting slider 3, and the tilt of the optical detecting unit about the Y-axis when the optical detecting unit moves to the position Xj.
  • the alignment residual ⁇ Xi of the substrate 9 relative to the center of the mark position measuring module at the position Yi is compensated to the detection mark i caused when the substrate stage 6 moves to the position Yi at the position Yi
  • the alignment residual ⁇ Yi of the substrate 9 with respect to the center of the mark position measuring module is compensated to the position of the optical detecting unit at the position Xi
  • the alignment residual ⁇ Xi of the substrate 9 with respect to the center of the mark position measuring module is compensated to the detection mark caused when the substrate stage 6 moves to the position Yi
  • the alignment deviation (dxi_align1, dyi_align1) of the center of the measurement module relative to the mark position is specifically:
  • Dxi_align1 X_wsi+A_ws ⁇ Rzy_wsi+ ⁇ Xi;
  • Dyi_align1 B_ws ⁇ Rzy_wsi+H_ws ⁇ Rx_wsi;
  • A_ws is a deviation of the center of the measurement spot projected onto the substrate stage 6 by the reference stage X interferometer control measurement system 61 and the center of rotation of the substrate stage 6 in the Y direction;
  • B_ws is a deviation of the center of the measurement spot projected onto the substrate stage 6 by the reference stage Y interferometer control measurement system 62 from the center of rotation of the substrate stage 6 in the X direction;
  • H_ws is the distance in the Z direction of the best focal plane of the center of the measurement spot projected onto the substrate stage 6 and the center of the mark position measurement module by the reference stage Y interferometer control measurement system 62;
  • the alignment residual ⁇ Yi of the substrate relative to the center of the mark position measuring module when the optical detecting unit is at the position Xi is compensated to the detection mark i caused by the optical detecting unit moving to the position Xi Alignment deviation of the center of the mark position measurement module (dxi_align2, dyi_align2) Medium, specifically:
  • Dxi_align2 A_om ⁇ Rzx_omi+H_om ⁇ Ry_omi;
  • Dyi_align2 Y_omi+B_om ⁇ Rzx_omi+H'_om ⁇ Rx_omi+ ⁇ Yi;
  • A_om is a deviation of the center of the measurement spot projected onto the optical detection unit by the module X interferometer control measurement system 51 and the rotation center of the optical detection unit in the Y direction;
  • B_om is a deviation of the center of the measurement spot projected onto the optical detection unit by the module Y interferometer control measurement system 53 from the center of rotation of the optical detection unit in the X direction;
  • H_om is the distance of the center of the measurement spot projected onto the optical detection unit by the module X interferometer control measurement system 51 and the optimal focal plane of the mark position measurement module in the Z direction;
  • H'_om is the distance in the Z direction from the center of the measurement spot projected onto the optical detection slider 3 by the slider X interferometer control measurement system 52 and the optimal focal plane at the center of the marker position measurement module.
  • the Y-direction reference plate 73 is used to measure the alignment residual ⁇ Xi of the Y-direction reference plate 73 with respect to the mark position measurement module center when the substrate stage 6 is at the position Yi; X is used for the reference plate 72 The alignment residual ⁇ Yi of the X-direction reference plate 72 relative to the mark position measurement module center when the optical detection unit is at the position Xi is measured.
  • the method further comprises: measuring a height value Z1 of the mark position measuring module from the mark at this time;
  • the marker position measurement module is controlled to move vertically dZ such that the marker is located at the optimal focal plane of the marker position measurement module.
  • Table 1 is formed:
  • Table 1 Data on the position and deviation of the detection marks on the substrate
  • the correction of the substrate stage position and the position of the optical measuring unit has been completed by the above steps, and the correction data can be fed back to the lithography machine, and the aligning is performed according to the data.

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Abstract

一种光学测量装置和方法，在其中位置测量装置中设置了可以测量光学检测模块（5）、基板载台（6）在移动过程中产生的倾斜量的装置，根据该倾斜量数据结合光学检测模块（5）、基板载台（6）的位移与所在的位置坐标进行计算并修正，在测量基板上某一点时，使用该装置和方法对该点测得的相关数据进行修正，提高了测量的精准度，这样就解决了在测量大尺寸基板（9）时带来的大误差的问题。

Description

一种光学测量装置和方法 技术领域
本发明涉及半导体领域，尤其涉及一种光学测量装置和方法。
背景技术
在半导体集成电路制造过程中，一个完整的芯片通常需要经过多次光刻曝光才能制作完成。光刻即在已经涂布光刻胶的基板上曝光显影形成线路，在已经进行过光刻的基板上再次进行光刻，则为套刻。在进行光刻时，影响光刻精度的因素主要有基板与掩膜版的位置偏差、光刻形成线路的线宽和光刻胶自身的胶厚以及套刻偏差。
目前市场上的光学测量设备，其中包含有膜厚测量设备和位置以及套刻偏差集于一体的测量设备。如中国专利CN104412062A(申请号：CN201380035853.2，公开日：2015年3月11日)描述了一种膜厚测定装置，基板载台放置待测基板，基板载台上方为龙门架，膜厚测定头安装在滑动件上在龙门架上运动，测量基板上的膜的厚度。上述装置中还包括位置调整单元也即位置和套刻偏差测量设备，目前位置和套刻偏差测量设备采用桥式或龙门结构，其各运动方向有测量干涉仪进行测量控制，非运动方向无测量干涉仪配置。其中的位置校正使用覆盖整个测量行程的大掩膜版进行校正。
目前市场上测量标准偏差设备，为保持测量精度，使用较大掩模版进行定期校正。一是维护不便，需设备厂商校准，同时手动上载掩模版；二是随着平板中基板尺寸增大，后续掩模版的尺寸需要同时增大，存在局限性；三是随着尺寸增大，设备的运动范围或者设备自身的尺寸也变大，则必然使误差更加明显，增大误差值，影响了测量。
发明内容
本发明提供了一种光学测量装置和方法，将测量时仪器的倾斜量计算入误差内，提高测量的精度，用于解决上述问题。
为达到上述目的，本发明提出了一种光学测量装置，包括一基板载台，用 于放置基板；一光学检测载台框架，用于承载并将一光学检测滑块支撑在所述基板载台的上方，所述光学检测滑块可沿所述光学检测载台框架滑动；一光学检测单元，位于所述基板载台的上方且固定在所述光学检测滑块上，随着所述光学检测滑块沿所述光学检测载台框架移动，所述光学检测单元包括标记位置测量模块；一基板载台位置测量模块，用于测量所述基板载台的位置；一光学检测单元位置测量模块，用于测量所述光学检测单元的位置；以及一校正模块，根据所述基板载台的位置和所述光学检测单元的位置获得由所述基板载台和所述光学检测单元的运动所引起的标记位置测量偏差，并基于所述标记位置测量偏差对所述标记位置测量模块测得的标记位置进行校正。
作为优选，所述基板载台位置测量模块包括基板载台Y向测量组件和基板载台X向测量组件，所述基板载台Y向测量组件测量所述基板载台的Y向位移量，所述基板载台X向测量组件测量所述基板载台Y向运动中的X向偏移量。
作为优选，所述光学检测单元位置测量模块包括光学检测单元X向测量组件、光学检测滑块X向测量组件以及光学检测单元Y向测量组件，所述光学检测单元X向测量组件测量所述光学检测单元的X向位移量，所述光学检测滑块X向测量组件测量所述光学检测滑块的X向位移量，所述光学检测单元Y向测量组件用于测量所述光学检测单元X向运动中所述光学检测单元相对于光学检测载台框架的Y向偏移量。
作为优选，所述基板载台Y向测量组件和基板载台X向测量组件均采用干涉仪。
作为优选，所述光学检测单元X向测量组件和光学检测滑块X向测量组件采用干涉仪，所述光学检测单元Y向测量组件采用激光位移传感器。
作为优选，所述光学检测单元还包括用于测调所述光学检测单元与基板上表面距离的高度调整模块。
作为优选，所述基板载台上还布设有带校准标记的基准板，用于校正所述基板载台位置和光学检测单元位置。
作为优选，所述带校准标记的基准板包括横向基准板和与所述横向基准板垂直的纵向基准板，所述横向基准板沿所述基板载台X向布置，用于校准所述 光学检测单元沿X向运动时所述基板相对所述光学检测单元的Y向位置偏差，所述纵向基准板沿所述基板载台Y向布置，用于校准所述基板载台沿Y向运动时所述基板相对所述光学检测单元的X向位置偏差。
作为优选，所述光学测量装置还包括支撑底座，用于承载所述基板载台和光学检测载台框架。
作为优选，所述支撑底座从下至上包括减震单元和大理石。
作为优选，所述光学检测单元还用于检测曝光后基板上的图形线宽、套刻偏差、标记位置偏差和/或光刻胶胶厚。
本发明还提供一种光学测量方法，将所述光学检测滑块沿所述光学检测载台框架运动的方向定义为X向，在水平面上垂直于X向的方向定义为Y向，竖直方向定义为Z向，建立XYZ三维坐标系，其特征在于，具体包括以下步骤：
提供一带有检测标记的基板，放置在所述基板载台上；
控制所述基板载台沿Y向运动，光学检测单元沿X向运动，使任一检测标记i位于所述标记位置测量模块下，所述标记位置测量模块测量得到该检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align，dyi_align)；
同时，基板载台Y向测量组件测量所述基板载台的Y向位移量Yi和绕ZY平面的旋转量Rzy_wsi和绕X轴的倾斜量Rx_wsi，基板载台X向测量组件测量所述基板载台运动至位置Yi时所述基板载台的X向偏移量X_wsi，之后根据所述基板载台运动至位置Yi时所述基板载台的X向偏移量X_wsi、绕ZY平面的旋转量Rzy_wsi及绕X轴的倾斜量Rx_wsi，计算所述基板载台运动至位置Yi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align1，dyi_align1)；
同时，光学检测单元X向测量组件测量所述光学检测单元的X向位移量Xi，光学检测滑块X向测量组件测量所述光学检测滑块的X向位移量X’i和绕ZX平面的旋转量Rzx_omi，光学检测单元Y向测量组件测量所述光学检测单元运动至位置Xi时所述光学检测单元相对所述光学检测载台框架的Y向偏移量Y_omi和绕X轴倾斜量Rx_omi，根据所述光学检测单元的X向位移量Xi和光学检测滑块的X向位移量X’i计算所述光学检测单元运动至位置Xi时所述光学 检测单元绕Y轴的倾斜量Ry_omi，之后根据所述光学检测单元运动至位置Xi时所述光学检测单元绕ZX平面的旋转量Rzx_omi和绕Y轴的倾斜量Ry_omi，以及所述光学检测单元相对所述光学检测载台框架的Y向偏移量Y_omi和绕X轴倾斜量Rx_omi，计算所述光学检测单元运动至位置Xi时引起的所述检测标记i相对所述所述标记位置测量模块中心的对准偏差(dxi_align2，dyi_align2)；
根据所述基板载台运动至位置Yi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align1，dyi_align1)和所述光学检测单元运动至位置Xi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align2，dyi_align2)修正所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align，dyi_align)。
作为优选，根据下式计算所述基板载台运动至位置Yi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align1，dyi_align1)：
dxi_align1＝X_wsi+A_ws×Rzy_wsi；
dyi_align1＝B_ws×Rzy_wsi+H_ws×Rx_wsi；
其中，A_ws为所述基板载台X向测量组件投射至所述基板载台上的测量光斑中心与基板载台旋转中心在Y向的偏差；
B_ws为所述基板载台Y向测量组件投射至所述基板载台上的测量光斑中心与所述基板载台旋转中心在X向的偏差；
H_ws为所述基板载台Y向测量组件投射至所述基板载台上的测量光斑中心与所述标记位置测量模块的最佳焦面在Z向的距离；
作为优选，根据下式计算所述光学检测单元运动至位置Xi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align2，dyi_align2)：
dxi_align2＝A_om×Rzx_omi+H_om×Ry_omi；
dyi_align2＝Y_omi+B_om×Rzx_omi+H'_om×Rx_omi；
其中，A_om为所述光学检测单元X向测量组件投射至所述光学检测单元上的测量光斑中心与所述光学检测单元旋转中心在Y向的偏差；
B_om为所述光学检测单元Y向测量组件投射至所述光学检测单元上的测量光斑中心与所述光学检测单元旋转中心在X向的偏差；
H_om为所述光学检测单元X向测量组件投射至所述光学检测单元上的测量光斑中心与所述标记位置测量模块的最佳焦面在Z向的距离；
H’_om为所述光学检测滑块X向测量组件投射至所述光学检测滑块上的测量光斑中心与所述标记位置测量模块的最佳焦面在Z向的距离。
作为优选，还包括所述基板载台位置和光学检测单元位置的校准，具体包括以下步骤：
测量位于所述基板载台上的基准板上的校准标记，首先控制所述基板载台沿Y向运动，光学检测单元沿X向运动，使所述基准板上任一校准标记j位于所述标记位置测量模块下，所述标记位置测量模块测量得到所述校准标记j的位置，计算所述校准标记j相对所述标记位置测量模块的对准偏差(dxj_align，dyj_align)；
同时，基板载台Y向测量组件测量所述基板载台的Y向位移量Yj和绕ZY平面的旋转量Rzy_wsj和绕X轴的倾斜量Rx_wsj，基板载台X向测量组件测量所述基板载台运动至位置Yj时所述基板载台的X向偏移量X_wsj，之后根据所述基板载台运动至位置Yj时所述基板载台的X向偏移量X_wsj、绕ZY平面的旋转量Rzy_wsj及绕X轴的倾斜量Rx_wsj，计算所述基板载台运动至位置Yj时引起的所述校准标记j相对所述标记位置测量模块中心的对准偏差(dxj_align1，dyj_align1)；
光学检测单元X向测量组件测量所述光学检测单元的X向位移量Xj，光学检测滑块X向测量组件测量所述光学检测滑块的X向位移量X’j和绕ZX平面的旋转量Rzx_omj，光学检测单元Y向测量组件测量所述光学检测单元运动至位置Xj时所述光学检测单元相对所述光学检测载台框架的Y向偏移量Y_omj和绕X轴倾斜量Rx_omj，根据所述光学检测单元的X向位移量Xj和光学检测滑块的X向位移量X’j计算所述光学检测单元运动至位置Xj时所述光学检测单元绕Y轴的倾斜量Ry_omj，之后根据所述光学检测单元运动至位置Xj时所述光学检测单元绕ZX平面的旋转量Rzx_omj和绕Y轴的倾斜量Ry_omj，以及所述光学检测单元相对所述光学检测载台框架的Y向偏移量Y_omj和绕X轴倾斜量Rx_omj，计算所述光学检测单元运动至位置Xj时引起的所述校准标记j相对 所述标记位置测量模块中心的对准偏差(dxj_align2，dyj_align2)；
根据所述基板载台运动至位置Yj时引起的所述校准标记j相对所述标记位置测量模块中心的对准偏差(dxj_align1，dyj_align1)和所述光学检测单元运动至位置Xj时引起的所述校准标记j相对所述标记位置测量模块中心的对准偏差(dxj_align2，dyj_align2)修正所述校准标记j相对所述标记位置测量模块中心的对准偏差(dxj_align，dyj_align)；
重复上述步骤，得到所有修正后的所述校准标记相对所述标记位置测量模块中心的对准偏差(dxj_align，dyj_align)，j＝1,2,…n；
处理所有修正后的所述校准标记相对所述标记位置测量模块中心的对准偏差(dxj_align，dyj_align)，j＝1,2,…n，得到所述基板载台在位置Yi时所述基准板相对所述标记位置测量模块中心的对准残差ΔXi和所述光学检测单元在位置Xi时所述基准板相对所述标记位置测量模块中心的对准残差ΔYi；
最后将所述基板载台在位置Yi时所述基准板相对所述标记位置测量模块中心的对准残差ΔXi补偿到所述基板载台运动至位置Yi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align1，dyi_align1)中，将所述光学检测单元在位置Xi时所述基准板相对所述标记位置测量模块中心的对准残差ΔYi补偿到所述光学检测单元运动至位置Xi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align2，dyi_align2)中。
作为优选，根据下式将所述基板载台在位置Yi时所述基准板相对所述标记位置测量模块中心的对准残差ΔXi补偿到所述基板载台运动至位置Yi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align1，dyi_align1)中：
dxi_align1＝X_wsi+A_ws×Rzy_wsi+ΔXi；
dyi_align1＝B_ws×Rzy_wsi+H_ws×Rx_wsi；
其中，A_ws为所述基板载台X向测量组件投射至所述基板载台上的测量光斑中心与基板载台旋转中心在Y向的偏差；
B_ws为所述基板载台Y向测量组件投射至所述基板载台上的测量光斑中心与所述基板载台旋转中心在X向的偏差；
H_ws为所述基板载台Y向测量组件投射至所述基板载台上的测量光斑中心与所述标记位置测量模块的最佳焦面在Z向的距离；
作为优选，根据下式将所述光学检测单元在位置Xi时所述基准板相对所述标记位置测量模块中心的对准残差ΔYi补偿到所述光学检测单元运动至位置Xi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align2，dyi_align2)中：
dxi_align2＝A_om×Rzx_omi+H_om×Ry_omi；
dyi_align2＝Y_omi+B_om×Rzx_omi+H'_om×Rx_omi+ΔYi；
其中，A_om为所述光学检测单元X向测量组件投射至所述光学检测单元上的测量光斑中心与所述光学检测单元旋转中心在Y向的偏差；
B_om为所述光学检测单元Y向测量组件投射至所述光学检测单元上的测量光斑中心与所述光学检测单元旋转中心在X向的偏差；
H_om为所述光学检测单元X向测量组件投射至所述光学检测单元上的测量光斑中心与所述标记位置测量模块的最佳焦面在Z向的距离；
H’_om为所述光学检测滑块X向测量组件投射至所述光学检测滑块上的测量光斑中心与所述标记位置测量模块的最佳焦面在Z向的距离。
作为优选，在所述基板载台上布置一与Y向平行的Y向基准板，用于测量所述基板载台在位置Yi时所述基准板相对所述标记位置测量模块中心的对准残差ΔXi；在所述基板载台上布置一与X向平行的X向基准板，用于测量所述光学检测单元在位置Xi时所述基准板相对所述标记位置测量模块中心的对准残差ΔYi。
作为优选，采用线性插值的方法处理所有修正后的所述校准标记相对所述标记位置测量模块中心的对准偏差(dxj_align，dyj_align)，j＝1,2,…n，得到所述基板载台在位置Yi时所述基准板相对所述标记位置测量模块中心的对准残差ΔXi和所述光学检测单元在位置Xi时所述基准板相对所述标记位置测量模块中心的对准残差ΔYi。
作为优选，所述标记位置测量模块检测一检测标记时还包括：测量此时所述标记位置测量模块距离所述检测标记的高度值Z1；
计算所述高度值Z1相对于所述标记位置测量模块的最佳焦面高度值Z2的高度偏差dZ＝Z1-Z2；
控制所述标记位置测量模块垂向运动dZ，使所述检测标记位于所述标记位置测量模块的最佳焦面处。
与现有技术相比，本发明的有益效果是：
本发明提供了一种光学测量装置和方法，设置了可以测量光学检测单元、基板载台在移动过程中产生的倾斜量的装置，根据该倾斜量数据结合光学检测模块、基板载台的位移与所在的位置坐标进行计算并修正，在测量基板上某一点时，使用上述装置和方法对该点测得的相关数据进行修正，提高了标记位置测量的精准度，这样就解决了在测量大尺寸基板时带来的大误差的问题。此外，本发明提供的基板上设置了扫描向基准板和非扫描向基准板，可便于设备自身进行自动校准，提高了便利性。
附图说明
图1为本发明提供的光学测量装置结构示意图；
图2为图1的俯视图；
图3和图4皆为本发明提供的基板上测量偏差的标记点分布示意图。
图中：
1-支撑底座、2-光学检测载台框架、21、22-框架Y向干涉仪测量系统、3-光学检测滑块、4-垂向运动机构控制单元、5-光学检测模块、51-模块X干涉仪控制测量系统、52-滑块X干涉仪控制测量系统、53-模块Y干涉仪控制测量系统、5a-位置粗测量传感器、5b-第一位置精测和线宽测量传感器、5c-第二位置精测和线宽测量传感器、5d-胶厚测量传感器、5e-第一高度测量传感器、5f-第二高度测量传感器、6-基板载台、61-基板载台X干涉仪控制测量系统、62-基板载台Y干涉仪控制测量系统、7-基准板、71-线宽标定基准板、72-X向基准板、73-Y向基准板、74-胶厚标定基准板、8-基板温度控制单元、9-基板、91-基板标记；L1～L30：标记点连接线。
具体实施方式
为使本发明的上述目的、特征和优点能够更加明显易懂，下面结合附图对本发明的具体实施方式做详细的说明。
实施例一
请参照图1与图2，以水平向右为X向，垂直于纸面向里的方向为Y向，竖直向上为Z向，建立XYZ三维坐标系。本发明提供的可修正测量装置，该装置包括一支撑底座1，用于承载整个可修正测量装置，该支撑底座从下至上包括与地面接触的地基、用于减缓地面振动对机器测量影响的减震单元、以及用以设置X向、Y向驱动机构的大理石台。
请参照图2，支撑底座1为一方形台面，其中央放置着一基板载台6，基板载台6主要用于放置基板9，并且在基板9周围放置有多种用于给基板9校准的基准板7，基准板7包括用于给基板9在X向校准的X向基准板72也即横向基准板、用于给基板9在Y向校准的Y向基准板73也即纵向基准板、线宽标定基准板71、用于校准光刻胶胶厚的胶厚标定基准板74，其中X向基准板72和Y向基准板73相互垂直，线宽标定基准板71和胶厚标定基准板74分别位于X向基准板72的两端。
X向基准板72和Y向基准板73上设计有周期分布的对准标记，用于周期性校正位置偏差；线宽标定基准板71用于标定第一位置精测和线宽测量传感器5b、第二位置精测和线宽测量传感器5c的线宽测量偏差，保证线宽测量准确度。
在支撑底座1上，在基板载台6上方设置了光学检测载台框架2，该光学检测载台框架2为一龙门架，其从基板载台6一侧沿Z向向上延伸一定的高度后，沿X向延伸至基板载台6相对的一侧，然后沿Z向向下延伸至支撑底座1上。
在光学检测载台框架2上设置一个可沿光学检测载台框架2移动的光学检测滑块3，也就是说光学检测滑块3安装在光学检测载台框架2上并能够沿着X向移动，在光学检测滑块3下固定有光学检测单元，也即光学检测模块5，该光学检测模块5包括参数检测模块和标记位置测量模块，具体为位于光学检测模块5下方设置的标记位置测量模块、线宽测量模块和光刻胶胶厚测量模块，将上述三项测量模块结合在一个光学检测模块5上，当光学检测模块5在光学检 测滑块3的带动下沿X向运动时，可选上述三种测量模块任意组合进行测量，也可各自单独测量。在测量基板9上的数据时，这三种测量模块能够同时对应相同的位置，因此更利于分析，尤其有利于分析线路线宽和胶厚相关性。
在光学检测模块5上设置有一高度调整模块，也即安装在光学检测模块5一侧的垂向运动机构控制单元4，该模块能够控制光学检测模块5相对于光学检测滑块3在Z向上的运动，这样也就调整了光学检测模块5相对于基板9的高度。
具体地，请继续参照图1，参数检测模块和标记位置测量模块在光学检测模块5下表面设置为：
位置粗测量传感器5a，用于测量基板9相对于基板载台6的偏差，保证基板9上的基板标记91位于第一位置精测和线宽测量传感器5b、第二位置精测和线宽测量传感器5c的视场内；
第一位置精测和线宽测量传感器5b，用于测量基板标记91偏差、光刻胶线路特征尺寸的线宽和套刻偏差；
第二位置精测和线宽测量传感器5c，用于测量基板标记91位置偏差、光刻胶线路特征尺寸的线宽和套刻偏差，其与第一位置精测和线宽测量传感器5b相互对称设置，且相对于第一位置精测和线宽测量传感器5b，第二位置精测和线宽测量传感器5c对准视场小，可测量更小光刻胶线路特征尺寸的线宽；
胶厚测量传感器5d，用于测量基板9上或基准板7上或硅片上光刻胶的胶厚，该传感器相对于位置粗测量传感器5a为对称设置。
第一高度测量传感器5e和第二高度测量传感器5f，二者皆用于测量基板9的上表面的高度，且这两者分别设置于第一位置精测和线宽测量传感器5b、第二位置精测和线宽测量传感器5c靠近基板9的一端，且相互对称。
光学测量装置中还包括用于测量基板载台6位置的基板载台位置测量模块，所述基板载台位置测量模块包括基板载台Y向测量组件和基板载台X向测量组件，所述基板载台Y向测量组件测量所述基板载台的Y向位移量，所述基板载台X向测量组件测量所述基板载台Y向运动中的X向偏移量，在本发明中具体为：
基板载台X干涉仪控制测量系统61也即基板载台X向测量组件，用于控制基板载台6在X向上的运动，并同时测量基板载台6的X位置X_ws以及绕XZ平面的旋转量Rzx_ws；
基准载台Y干涉仪控制测量系统62也即基板载台Y向测量组件，用于控制基板载台6在Y向的运动，测量此时基板载台6的Y位置Y_ws，并同时测量基板载台6绕ZY平面的旋转量Rzy_ws和绕X轴的倾斜量Rx_ws；
基板载台X干涉仪控制测量系统61和基准载台Y干涉仪控制测量系统62分别设置在基板载台6的X向和Y向上，两者皆采用干涉仪；
光学测量装置还包括用于测量光学检测模块5自身位置与偏差的光学检测单元位置测量模块，其包括光学检测单元X向测量组件、光学检测滑块X向测量组件以及光学检测单元Y向测量组件，具体为：
模块X干涉仪控制测量系统51也即光学检测单元X向测量组件，设置在光学检测模块5上，用于测量光学检测模块5在X向上的位移量X_om并且控制光学检测模块5在X向的运动，模块X干涉仪控制测量系统51和滑块X干涉仪控制测量系统52相互连接，将两者测量得到的数据进行参数处理，可得到光学检测模块5的倾斜量Ry_om；
滑块X干涉仪控制测量系统52也即光学检测滑块X向测量组件，设置在光学检测滑块3上，可测量光学检测模块5在XZ平面上的旋转量Rzx_om；
模块Y干涉仪控制测量系统53也即光学检测单元Y向测量组件，设置在光学检测模块5上，用于测量光学检测模块5相对于光学检测载台框架2的Y向位移量Y_om和倾斜量Rx_om，所述光学检测单元X向测量组件和光学检测滑块X向测量组件采用干涉仪，所述光学检测单元Y向测量组件采用激光位移传感器。
本发明中在基板载台6上还设置了基板温度控制单元8，这是一种恒温系统，其设置在基板9下方，当基板上载到基板载台6上时，可快速使基板9温度达到目标温度，这样就减少了基板9在测试前等待其到达目标温度的时间，提高了生产效率。
此外，本发明提供的可修正测量装置中，上述所有的检测数据的模块或者 单元或者系统皆与一控制系统中的参数处理单元连接，参数处理单元处理检测的数据，处理完成后反馈至相应的位置调控系统中，如反馈至垂向机构控制单元4、模块X干涉仪控制测量系统51、滑块X干涉仪控制测量系统52、模块Y干涉仪控制测量系统53、基板载台X干涉仪控制测量系统61、基准载台Y干涉仪控制系统62，控制各自对应的部件作相应的移动。
在本发明中，还设置了校正模块，根据所述基板载台6的位置和所述光学检测单元的位置获得所述基板载台6和所述光学检测单元运动所引起的基板标记91位置测量偏差，之后对所述标记位置测量模块测得的基板标记91位置进行校正。
本发明中，为了防止因光学检测载台框架2在工作过程中产生了变形而使得光学检测滑块3在移动时，在Y向和Z向上都有可能产生移动偏差，因此为了将这些移动偏差得到补偿，则位置测量装置还包括位于光学检测载台框架2上的用于测量其变形量的框架测量单元，具体为关于基板载台6对称的框架Y向干涉仪测量系统21、22也即框架测量单元，当基板载台6沿着Y向运动时，框架Y向干涉仪测量系统21、22可测量得到光学检测载台框架2变形量Yref和旋转变形量Rzref，基板载台X干涉仪控制测量系统61和基准载台Y干涉仪控制测量系统62根据上述数据校正对准时刻基板载台6位置，从而完成了校正功能。
本发明还提供一种使用上述可修正测量装置的测量方法，当光学检测模块5在光学检测载台框架2上移动至对应基板9上的某一点处时，使用位置测量装置测量此时基板9、基板载台6、光学检测滑块3、光学检测模块5的位置与偏差以及光学检测模块5在移动过程中产生的倾斜量，根据倾斜量对该点显示的数据进行修正，具体包括以下步骤：
提供一带有检测标记91的基板9放置在所述基板载台6上；
控制所述基板载台6沿Y向运动，光学检测单元也即光学检测模块5沿X向运动，使任一检测标记i位于所述标记位置测量模块下，所述标记位置测量模块测量得到该检测标记i的位置，并计算所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align，dyi_align)；
设置基板载台Y向测量组件也即基准载台Y干涉仪控制测量系统62测量所述基板载台6的Y向位移量Yi和绕ZY平面的旋转量Rzy_wsi和绕X轴的倾斜量Rx_wsi，基板载台X向测量组件也即基板载台X干涉仪控制测量系统61测量所述基板载台运动至位置Yi时所述基板载台6的X向偏移量X_wsi，之后根据所述基板载台6运动至位置Yi时所述基板载台6的X向偏移量X_wsi、绕ZY平面的旋转量Rzy_wsi及绕X轴的倾斜量Rx_wsi，计算所述基板载台6运动至位置Yi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align1，dyi_align1)；
设置光学检测单元X向测量组件也即模块X干涉仪控制测量系统51测量所述光学检测单元的X向位移量Xi，光学检测滑块X向测量组件也即滑块X干涉仪控制测量系统52测量所述光学检测滑块的X向位移量X’i和绕ZX平面的旋转量Rzx_omi，光学检测单元Y向测量组件也即模块Y干涉仪控制测量系统53测量所述光学检测单元也即光学检测模块5运动至位置Xi时所述光学检测单元相对所述光学检测载台框架2的Y向偏移量Y_omi和绕X轴倾斜量Rx_omi，根据所述光学检测单元的X向位移量Xi和光学检测滑块的X向位移量X’i计算所述光学检测单元运动至位置Xi时所述光学检测单元绕Y轴的倾斜量Ry_omi，之后根据所述光学检测单元运动至位置Xi时所述光学检测单元绕ZX平面的旋转量Rzx_omi和绕Y轴的倾斜量Ry_omi，以及所述光学检测单元相对所述光学检测载台框架2的Y向偏移量Y_omi和绕X轴倾斜量Rx_omi，计算所述光学检测单元运动至位置Xi时引起的所述检测标记i相对所述位置测量模块中心的对准偏差(dxi_align2，dyi_align2)；
根据所述基板载台6运动至位置Yi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align1，dyi_align1)和所述光学检测单元运动至位置Xi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align2，dyi_align2)修正所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align，dyi_align)。
其中，计算所述基板载台6运动至位置Yi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align1，dyi_align1)，具体为：
dxi_align1＝X_wsi+A_ws×Rzy_wsi；
dyi_align1＝B_ws×Rzy_wsi+H_ws×Rx_wsi；
其中，A_ws为所述基板载台X向测量组件也即基准载台X干涉仪控制测量系统61投射至所述基板载台6上的测量光斑中心与基板载台旋转中心在Y向的偏差；
B_ws为所述基准载台Y干涉仪控制测量系统62投射至所述基板载台6上的测量光斑中心与所述基板载台6旋转中心在X向的偏差；
H_ws为所述基板载台Y向测量组件也即基准载台Y干涉仪控制测量系统62投射至所述基板载台6上的测量光斑中心与标记位置测量模块的最佳焦面在Z向的距离；
其中，计算所述光学检测单元运动至位置Xi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align2，dyi_align2)，具体为：
dxi_align2＝A_om×Rzx_omi+H_om×Ry_omi；
dyi_align2＝Y_omi+B_om×Rzx_omi+H'_om×Rx_omi；
其中，A_om为所述光学检测单元X向测量组件也即模块X干涉仪控制测量系统51投射至所述光学检测单元上的测量光斑中心与所述光学检测单元旋转中心在Y向的偏差；
B_om为所述光学检测单元Y向测量组件也即模块X干涉仪控制测量系统51投射至所述光学检测单元上的测量光斑中心与所述光学检测单元旋转中心在X向的偏差；
H_om为所述光学检测单元X向测量组件也即模块X干涉仪控制测量系统51投射至所述光学检测单元上的测量光斑中心与标记位置测量模块的最佳焦面在Z向的距离；
H’_om为所述光学检测滑块X向测量组件也即滑块X干涉仪控制测量系统52投射至所述光学检测滑块3上的测量光斑中心与标记位置测量模块的最佳焦面在Z向的距离。
较佳地，还包括校准所述基板载台位置和光学检测单元位置，具体包括以下步骤：
测量位于所述基板载台上的基准板7上的校准标记，首先控制所述基板载台6沿Y向运动，光学检测单元沿X向运动，使所述基准板7上任一校准标记j位于所述标记位置测量模块下，所述标记位置测量模块测量得到所述校准标记j的位置，计算所述校准标记j相对所述标记位置测量模块中心的对准偏差(dxj_align，dyj_align)；
基准载台Y干涉仪控制测量系统62测量所述基板载台6的Y向位移量Yj绕ZY平面的旋转量Rzy_wsj和绕X轴的倾斜量Rx_wsj，基板载台X干涉仪控制测量系统61测量所述基板载台运动至位置Yj时所述基板载台的X向偏移量X_wsj，之后根据所述基板载台6运动至位置Yj时所述基板载台6的X向偏移量X_wsj、绕ZY平面的旋转量Rzy_wsj及绕X轴的倾斜量Rx_wsj，计算所述基板载台6运动至位置Yj时引起的所述校准标记j相对所述标记位置测量模块中心的对准偏差(dxj_align1，dyj_align1)；
模块X干涉仪控制测量系统51测量所述光学检测单元的X向位移量Xj，滑块X干涉仪控制测量系统52测量所述光学检测滑块3的X向位移量X’j和绕ZX平面的旋转量Rzx_omj，模块Y干涉仪控制测量系统53测量所述光学检测单元运动至位置Xj时所述光学检测单元相对所述光学检测载台框架2的Y向偏移量Y_omj和绕X轴倾斜量Rx_omj，根据所述光学检测单元的X向位移量Xj和光学检测滑块3的X向位移量X’j计算所述光学检测单元运动至位置Xj时所述光学检测单元绕Y轴的倾斜量Ry_omj，之后根据所述光学检测单元运动至位置Xj时所述光学检测单元绕ZX平面的旋转量Rzx_omj和绕Y轴的倾斜量Ry_omj，以及所述光学检测单元相对所述光学检测载台框架2的Y向偏移量Y_omj和绕X轴倾斜量Rx_omj，计算所述光学检测单元运动至位置Xj时引起的所述校准标记j相对所述标记位置测量模块中心的对准偏差(dxj_align2，dyj_align2)；
根据所述基板载台6运动至位置Yj时引起的所述校准标记j相对所述标记位置测量模块中心的对准偏差(dxj_align1，dyj_align1)和所述光学检测单元运动至位置Xj时引起的所述校准标记j相对所述标记位置测量模块中心的对准偏差(dxj_align2，dyj_align2)修正所述校准标记j相对所述标记位置测量模块中 心的对准偏差(dxj_align，dyj_align)；
重复上述步骤，得到所有修正后的所述校准标记相对所述标记位置测量模块中心的对准偏差(dxj_align，dyj_align)，j＝1,2,…n；
处理所有修正后的所述校准标记相对所述标记位置测量模块中心的对准偏差(dxj_align，dyj_align)，j＝1,2,…n，得到所述基板载台6在位置Yi时所述基准板7相对所述标记位置测量模块中心的对准残差ΔXi和所述光学检测单元在位置Xi时所述基准板7相对所述标记位置测量模块中心的对准残差ΔYi；
最后将所述基板载台6在位置Yi时所述基板9相对所述标记位置测量模块中心的对准残差ΔXi补偿到所述基板载台6运动至位置Yi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align1，dyi_align1)中，将所述光学检测单元在位置Xi时所述基板9相对所述标记位置测量模块中心的对准残差ΔYi补偿到所述光学检测单元运动至位置Xi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align2，dyi_align2)中。
其中，将所述基板载台6在位置Yi时所述基板9相对所述标记位置测量模块中心的对准残差ΔXi补偿到所述基板载台6运动至位置Yi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align1，dyi_align1)，具体为：
dxi_align1＝X_wsi+A_ws×Rzy_wsi+ΔXi；
dyi_align1＝B_ws×Rzy_wsi+H_ws×Rx_wsi；
其中，A_ws为所述基准载台X干涉仪控制测量系统61投射至所述基板载台6上的测量光斑中心与基板载台6旋转中心在Y向的偏差；
B_ws为所述基准载台Y干涉仪控制测量系统62投射至所述基板载台6上的测量光斑中心与所述基板载台6旋转中心在X向的偏差；
H_ws为基准载台Y干涉仪控制测量系统62投射至所述基板载台6上的测量光斑中心与标记位置测量模块中心的最佳焦面在Z向的距离；
其中，将所述光学检测单元在位置Xi时所述基板相对所述标记位置测量模块中心的对准残差ΔYi补偿到所述光学检测单元运动至位置Xi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align2，dyi_align2) 中，具体为：
dxi_align2＝A_om×Rzx_omi+H_om×Ry_omi；
dyi_align2＝Y_omi+B_om×Rzx_omi+H'_om×Rx_omi+ΔYi；
其中，A_om为模块X干涉仪控制测量系统51投射至所述光学检测单元上的测量光斑中心与所述光学检测单元旋转中心在Y向的偏差；
B_om为模块Y干涉仪控制测量系统53投射至所述光学检测单元上的测量光斑中心与所述光学检测单元旋转中心在X向的偏差；
H_om为模块X干涉仪控制测量系统51投射至所述光学检测单元上的测量光斑中心与标记位置测量模块的最佳焦面在Z向的距离；
H’_om为滑块X干涉仪控制测量系统52投射至所述光学检测滑块3上的测量光斑中心与标记位置测量模块中心的最佳焦面在Z向的距离。
较佳地，Y向基准板73用于测量所述基板载台6在位置Yi时所述Y向基准板73相对所述标记位置测量模块中心的对准残差ΔXi；X向基准板72用于测量所述光学检测单元在位置Xi时所述X向基准板72相对所述标记位置测量模块中心的对准残差ΔYi。
较佳地，采用线性插值的方法处理所有修正后的所述校准标记相对所述标记位置测量模块中心的对准偏差(dxj_align，dyj_align)，j＝1,2,…n，得到所述基板载台6在位置Yi时所述基准板9相对所述标记位置测量模块中心的对准残差ΔXi和所述光学检测单元在位置Xi时所述基准板9相对所述标记位置测量模块中心的对准残差ΔYi。
较佳地，所述标记位置测量模块检测一标记时还包括：测量此时所述标记位置测量模块距离所述标记的高度值Z1；
计算所述高度值Z1相对于所述标记位置测量模块的最佳焦面高度值Z2的高度偏差dZ＝Z1-Z2；
控制所述标记位置测量模块垂向运动dZ，使所述标记位于所述标记位置测量模块的最佳焦面处。较佳地，根据上述步骤，形成表1：
表1：基板上的检测标记的位置与偏差的数据
Figure PCTCN2017103232-appb-000001
输出所有检测标记点之间的连接线长度、测量得到的偏差以及修正之后的连接线长度，形成表2：
表2：检测标记点之间连接线修正前后的数据
Figure PCTCN2017103232-appb-000002
自此，通过上述步骤完成了对基板载台位置及光学测量单元位置的修正，可将这些修正数据反馈至光刻机中，在光刻进行对准时，根据这些数据作相应的调整。
本发明对上述实施例进行了描述，但本发明不仅限于上述实施例。显然本领域的技术人员可以对发明进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包括这些改动和变型在内。

Claims (20)

  1. 一种光学测量装置，其特征在于，包括
    一基板载台，用于放置基板；
    一光学检测载台框架，用于承载并将一光学检测滑块支撑在所述基板载台的上方，所述光学检测滑块可沿所述光学检测载台框架滑动；
    一光学检测单元，位于所述基板载台的上方且固定在所述光学检测滑块上，随着所述光学检测滑块沿所述光学检测载台框架移动，所述光学检测单元包括标记位置测量模块；
    一基板载台位置测量模块，用于测量所述基板载台的位置；
    一光学检测单元位置测量模块，用于测量所述光学检测单元的位置；以及
    一校正模块，根据所述基板载台的位置和所述光学检测单元的位置获得由所述基板载台和所述光学检测单元的运动所引起的标记位置测量偏差，并基于所述标记位置测量偏差对所述标记位置测量模块测得的标记位置进行校正。
  2. 如权利要求1所述的光学测量装置，其特征在于，所述基板载台位置测量模块包括基板载台Y向测量组件和基板载台X向测量组件，所述基板载台Y向测量组件测量所述基板载台的Y向位移量，所述基板载台X向测量组件测量所述基板载台Y向运动中的X向偏移量。
  3. 如权利要求1所述的光学测量装置，其特征在于，所述光学检测单元位置测量模块包括光学检测单元X向测量组件、光学检测滑块X向测量组件以及光学检测单元Y向测量组件，所述光学检测单元X向测量组件测量所述光学检测单元的X向位移量，所述光学检测滑块X向测量组件测量所述光学检测滑块的X向位移量，所述光学检测单元Y向测量组件用于测量所述光学检测单元X向运动中所述光学检测单元相对于光学检测载台框架的Y向偏移量。
  4. 如权利要求2所述的光学测量装置，其特征在于，所述基板载台Y向测量组件和基板载台X向测量组件均采用干涉仪。
  5. 如权利要求3所述的光学测量装置，其特征在于，所述光学检测单元X向测量组件和光学检测滑块X向测量组件采用干涉仪，所述光学检测单元Y向 测量组件采用激光位移传感器。
  6. 如权利要求1所述的光学测量装置，其特征在于，所述光学检测单元还包括用于测调所述光学检测单元与基板上表面距离的高度调整模块。
  7. 如权利要求1所述的光学测量装置，其特征在于，所述基板载台上还布设有带校准标记的基准板，用于校正所述基板载台位置和光学检测单元位置。
  8. 如权利要求7所述的光学测量装置，其特征在于，所述带校准标记的基准板包括横向基准板和与所述横向基准板垂直的纵向基准板，所述横向基准板沿所述基板载台X向布置，用于校准所述光学检测单元沿X向运动时所述基板相对所述光学检测单元的Y向位置偏差，所述纵向基准板沿所述基板载台Y向布置，用于校准所述基板载台沿Y向运动时所述基板相对所述光学检测单元的X向位置偏差。
  9. 如权利要求1所述的光学测量装置，其特征在于，所述光学测量装置还包括支撑底座，用于承载所述基板载台和光学检测载台框架。
  10. 如权利要求1所述的光学测量装置，其特征在于，所述支撑底座从下至上包括减震单元和大理石。
  11. 如权利要求1所述的光学测量装置，其特征在于，所述光学检测单元还用于检测曝光后基板上的图形线宽、套刻偏差、标记位置偏差和/或光刻胶胶厚。
  12. 一种使用如权利要求1所述的光学测量装置的测量方法，将所述光学检测滑块沿所述光学检测载台框架运动的方向定义为X向，在水平面上垂直于X向的方向定义为Y向，竖直方向定义为Z向，建立XYZ三维坐标系，其特征在于，具体包括以下步骤：
    提供一带有检测标记的基板，放置在所述基板载台上；
    控制所述基板载台沿Y向运动，光学检测单元沿X向运动，使任一检测标记i位于所述标记位置测量模块下，所述标记位置测量模块测量得到该检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align，dyi_align)；
    同时，基板载台Y向测量组件测量所述基板载台的Y向位移量Yi和绕ZY平面的旋转量Rzy_wsi和绕X轴的倾斜量Rx_wsi，基板载台X向测量组件测量所述基板载台运动至位置Yi时所述基板载台的X向偏移量X_wsi，之后根据所 述基板载台运动至位置Yi时所述基板载台的X向偏移量X_wsi、绕ZY平面的旋转量Rzy_wsi及绕X轴的倾斜量Rx_wsi，计算所述基板载台运动至位置Yi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align1，dyi_align1)；
    同时，光学检测单元X向测量组件测量所述光学检测单元的X向位移量Xi，光学检测滑块X向测量组件测量所述光学检测滑块的X向位移量X’i和绕ZX平面的旋转量Rzx_omi，光学检测单元Y向测量组件测量所述光学检测单元运动至位置Xi时所述光学检测单元相对所述光学检测载台框架的Y向偏移量Y_omi和绕X轴倾斜量Rx_omi，根据所述光学检测单元的X向位移量Xi和光学检测滑块的X向位移量X’i计算所述光学检测单元运动至位置Xi时所述光学检测单元绕Y轴的倾斜量Ry_omi，之后根据所述光学检测单元运动至位置Xi时所述光学检测单元绕ZX平面的旋转量Rzx_omi和绕Y轴的倾斜量Ry_omi，以及所述光学检测单元相对所述光学检测载台框架的Y向偏移量Y_omi和绕X轴倾斜量Rx_omi，计算所述光学检测单元运动至位置Xi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align2，dyi_align2)；
    根据所述基板载台运动至位置Yi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align1，dyi_align1)和所述光学检测单元运动至位置Xi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align2，dyi_align2)修正所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align，dyi_align)。
  13. 如权利要求12所述的光学测量方法，其特征在于，根据下式计算所述基板载台运动至位置Yi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align1，dyi_align1)：
    dxi_align1＝X_wsi+A_ws×Rzy_wsi；
    dyi_align1＝B_ws×Rzy_wsi+H_ws×Rx_wsi；
    其中，A_ws为所述基板载台X向测量组件投射至所述基板载台上的测量光斑中心与基板载台旋转中心在Y向的偏差；
    B_ws为所述基板载台Y向测量组件投射至所述基板载台上的测量光斑中心 与所述基板载台旋转中心在X向的偏差；
    H_ws为所述基板载台Y向测量组件投射至所述基板载台上的测量光斑中心与所述标记位置测量模块的最佳焦面在Z向的距离；
  14. 如权利要求13所述的光学测量方法，其特征在于，根据下式计算所述光学检测单元运动至位置Xi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align2，dyi_align2)：
    dxi_align2＝A_om×Rzx_omi+H_om×Ry_omi；
    dyi_align2＝Y_omi+B_om×Rzx_omi+H'_om×Rx_omi；
    其中，A_om为所述光学检测单元X向测量组件投射至所述光学检测单元上的测量光斑中心与所述光学检测单元旋转中心在Y向的偏差；
    B_om为所述光学检测单元Y向测量组件投射至所述光学检测单元上的测量光斑中心与所述光学检测单元旋转中心在X向的偏差；
    H_om为所述光学检测单元X向测量组件投射至所述光学检测单元上的测量光斑中心与所述标记位置测量模块的最佳焦面在Z向的距离；
    H’_om为所述光学检测滑块X向测量组件投射至所述光学检测滑块上的测量光斑中心与所述标记位置测量模块的最佳焦面在Z向的距离。
  15. 如权利要求12所述的光学测量方法，其特征在于，还包括所述基板载台位置和光学检测单元位置的校准，具体包括以下步骤：
    测量位于所述基板载台上的基准板上的校准标记，首先控制所述基板载台沿Y向运动，光学检测单元沿X向运动，使所述基准板上任一校准标记j位于所述标记位置测量模块下，所述标记位置测量模块测量得到所述校准标记j的位置，计算所述校准标记j相对所述标记位置测量模块的对准偏差(dxj_align，dyj_align)；
    同时，基板载台Y向测量组件测量所述基板载台的Y向位移量Yj和绕ZY平面的旋转量Rzy_wsi和绕X轴的倾斜量Rx_wsi，基板载台X向测量组件测量所述基板载台运动至位置Yj时所述基板载台的X向偏移量X_wsj，之后根据所述基板载台运动至位置Yj时所述基板载台的X向偏移量X_wsj、绕ZY平面的旋转量Rzy_wsj及绕X轴的倾斜量Rx_wsj，计算所述基板载台运动至位置Yj 时引起的所述校准标记j相对所述标记位置测量模块中心的对准偏差(dxj_align1，dyj_align1)；
    光学检测单元X向测量组件测量所述光学检测单元的X向位移量Xj，光学检测滑块X向测量组件测量所述光学检测滑块的X向位移量X’j和绕ZX平面的旋转量Rzx_omi，光学检测单元Y向测量组件测量所述光学检测单元运动至位置Xj时所述光学检测单元相对所述光学检测载台框架的Y向偏移量Y_omj和绕X轴倾斜量Rx_omi，根据所述光学检测单元的X向位移量Xj和光学检测滑块的X向位移量X’j计算所述光学检测单元运动至位置Xj时所述光学检测单元绕Y轴的倾斜量Ry_omj，之后根据所述光学检测单元运动至位置Xj时所述光学检测单元绕ZX平面的旋转量Rzx_omj和绕Y轴的倾斜量Ry_omj，以及所述光学检测单元相对所述光学检测载台框架的Y向偏移量Y_omj和绕X轴倾斜量Rx_omj，计算所述光学检测单元运动至位置Xj时引起的所述校准标记j相对所述标记位置测量模块中心的对准偏差(dxj_align2，dyj_align2)；
    根据所述基板载台运动至位置Yj时引起的所述校准标记j相对所述标记位置测量模块中心的对准偏差(dxj_align1，dyj_align1)和所述光学检测单元运动至位置Xj时引起的所述校准标记j相对所述标记位置测量模块中心的对准偏差(dxj_align2，dyj_align2)修正所述校准标记j相对所述标记位置测量模块中心的对准偏差(dxj_align，dyj_align)；
    重复上述步骤，得到所有修正后的所述校准标记相对所述标记位置测量模块中心的对准偏差(dxj_align，dyj_align)，j＝1,2,…n；
    处理所有修正后的所述校准标记相对所述标记位置测量模块中心的对准偏差(dxj_align，dyj_align)，j＝1,2,…n，得到所述基板载台在位置Yi时所述基准板相对所述标记位置测量模块中心的对准残差ΔXi和所述光学检测单元在位置Xi时所述基准板相对所述标记位置测量模块中心的对准残差ΔYi；
    最后将所述基板载台在位置Yi时所述基准板相对所述标记位置测量模块中心的对准残差ΔXi补偿到所述基板载台运动至位置Yi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align1，dyi_align1)中，将所述光学检测单元在位置Xi时所述基准板相对所述标记位置测量模块中心的对准 残差ΔYi补偿到所述光学检测单元运动至位置Xi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align2，dyi_align2)中。
  16. 如权利要求15所述的光学测量方法，其特征在于，根据下式将所述基板载台在位置Yi时所述基准板相对所述标记位置测量模块中心的对准残差ΔXi补偿到所述基板载台运动至位置Yi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align1，dyi_align1)中：
    dxi_align1＝X_wsi+A_ws×Rzy_wsi+ΔXi；
    dyi_align1＝B_ws×Rzy_wsi+H_ws×Rx_wsi；
    其中，A_ws为所述基板载台X向测量组件投射至所述基板载台上的测量光斑中心与基板载台旋转中心在Y向的偏差；
    B_ws为所述基板载台Y向测量组件投射至所述基板载台上的测量光斑中心与所述基板载台旋转中心在X向的偏差；
    H_ws为所述基板载台Y向测量组件投射至所述基板载台上的测量光斑中心与所述标记位置测量模块的最佳焦面在Z向的距离；
  17. 如权利要求15所述的光学测量方法，其特征在于，根据下式将所述光学检测单元在位置Xi时所述基准板相对所述标记位置测量模块中心的对准残差ΔYi补偿到所述光学检测单元运动至位置Xi时引起的所述检测标记i相对所述标记位置测量模块中心的对准偏差(dxi_align2，dyi_align2)中：
    dxi_align2＝A_om×Rzx_omi+H_om×Ry_omi；
    dyi_align2＝Y_omi+B_om×Rzx_omi+H'_om×Rx_omi+ΔYi；
    其中，A_om为所述光学检测单元X向测量组件投射至所述光学检测单元上的测量光斑中心与所述光学检测单元旋转中心在Y向的偏差；
    B_om为所述光学检测单元Y向测量组件投射至所述光学检测单元上的测量光斑中心与所述光学检测单元旋转中心在X向的偏差；
    H_om为所述光学检测单元X向测量组件投射至所述光学检测单元上的测量光斑中心与所述标记位置测量模块的最佳焦面在Z向的距离；
    H’_om为所述光学检测滑块X向测量组件投射至所述光学检测滑块上的测量光斑中心与所述标记位置测量模块的最佳焦面在Z向的距离。
  18. 如权利要求15所述的光学测量方法，其特征在于，在所述基板载台上布置一与Y向平行的Y向基准板，用于测量所述基板载台在位置Yi时所述基准板相对所述标记位置测量模块中心的对准残差ΔXi；在所述基板载台上布置一与X向平行的X向基准板，用于测量所述光学检测单元在位置Xi时所述基准板相对所述标记位置测量模块中心的对准残差ΔYi。
  19. 如权利要求15所述的光学测量方法，其特征在于，采用线性插值的方法处理所有修正后的所述校准标记相对所述标记位置测量模块中心的对准偏差(dxj_align，dyj_align)，j＝1,2,…n，得到所述基板载台在位置Yi时所述基准板相对所述标记位置测量模块中心的对准残差ΔXi和所述光学检测单元在位置Xi时所述基准板相对所述标记位置测量模块中心的对准残差ΔYi。
  20. 如权利要求12所述的光学测量方法，其特征在于，所述标记位置测量模块检测一检测标记时还包括：测量此时所述标记位置测量模块距离所述检测标记的高度值Z1；
    计算所述高度值Z1相对于所述标记位置测量模块的最佳焦面高度值Z2的高度偏差dZ＝Z1-Z2；
    控制所述标记位置测量模块垂向运动dZ，使所述检测标记位于所述标记位置测量模块的最佳焦面处。
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