WO2018055846A1 - Substrat de montage d'élément électroluminescent, son procédé de fabrication, et boîtier de montage d'élément électroluminescent - Google Patents

Substrat de montage d'élément électroluminescent, son procédé de fabrication, et boîtier de montage d'élément électroluminescent Download PDF

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Publication number
WO2018055846A1
WO2018055846A1 PCT/JP2017/021410 JP2017021410W WO2018055846A1 WO 2018055846 A1 WO2018055846 A1 WO 2018055846A1 JP 2017021410 W JP2017021410 W JP 2017021410W WO 2018055846 A1 WO2018055846 A1 WO 2018055846A1
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WIPO (PCT)
Prior art keywords
emitting element
light emitting
element mounting
aluminum nitride
substrate
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PCT/JP2017/021410
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English (en)
Japanese (ja)
Inventor
芳夫 馬屋原
久美子 姫井
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日本電気硝子株式会社
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Publication of WO2018055846A1 publication Critical patent/WO2018055846A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/52—Encapsulations
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls

Definitions

  • the present invention relates to a light emitting element mounting substrate for mounting a light emitting element such as a light emitting diode, a manufacturing method thereof, and a light emitting element mounting package using the light emitting element mounting substrate.
  • a light-emitting element mounting substrate is used to mount a light-emitting element.
  • An LED Light Emitting Diode
  • a light emitting element mounted on a light emitting element mounting substrate is a light source that is small in size and low in power consumption.
  • white LEDs are attracting attention as an alternative to incandescent bulbs and fluorescent lamps.
  • ultraviolet LED attracts attention as an ultraviolet light source in applications such as sterilization, air cleaning, cancer treatment, or resin curing.
  • Patent Document 1 discloses a light emitting element mounting substrate in which a light reflecting layer is provided on an aluminum nitride substrate.
  • filled vias are provided in an aluminum nitride substrate. The filled via connects the front surface side electrode and the back surface side electrode.
  • Patent Document 1 discloses a light emitting device in which a light emitting element is mounted on the light emitting element mounting substrate. The light emitting element is connected to the surface side electrode.
  • a resin is provided so as to cover the light emitting element, thereby sealing the light emitting element.
  • deep ultraviolet LEDs In recent years, attention has been focused on deep ultraviolet LEDs from the viewpoint of further improving performance such as sterilization, air cleaning, and resin curing.
  • deep UV LED When deep UV LED is used as a light emitting element, higher airtightness is required.
  • the light-emitting device of Patent Document 1 is based on a light-emitting element that emits visible light, and is not sufficiently airtight.
  • An object of the present invention is to provide a light emitting element mounting substrate that can exhibit high airtightness when the light emitting element is mounted and sealed, a method for manufacturing the light emitting element mounting substrate, and the light emitting element mounting. Another object is to provide a light-emitting element mounting package using a substrate.
  • the light emitting element mounting substrate of the present invention is a light emitting element mounting substrate for mounting a light emitting element, and has an aluminum nitride substrate having first and second main surfaces facing each other, and the aluminum nitride
  • a wiring electrode provided on the first main surface of the substrate; connected to the light emitting element; a terminal electrode provided on the second main surface of the aluminum nitride substrate;
  • a frame-shaped electrode provided in the aluminum nitride substrate, connected to the wiring electrode and the terminal electrode, and provided on the first main surface of the aluminum nitride substrate.
  • a through hole is provided in the aluminum nitride substrate so as to reach the second main surface from the first main surface, and the through hole electrode is provided in the through hole. Are location, the through hole, characterized in that it is sealed by the light reflecting layer.
  • the light reflecting layer is made of glass ceramics.
  • the manufacturing method of the light emitting element mounting substrate of this invention is a manufacturing method of the light emitting element mounting substrate comprised according to this invention, Comprising: The process of forming the said through hole in the said aluminum nitride substrate, The said aluminum nitride substrate And forming the through-hole electrode in the through-hole, and forming the wiring electrode and the terminal electrode on the first and second main surfaces, respectively, and the first of the aluminum nitride substrate. And forming the light reflecting layer so as to seal the through-hole on the main surface.
  • the light emitting element mounting package of the present invention is a light emitting element mounting package for mounting and sealing a light emitting element therein, and the light emitting element mounting substrate configured according to the present invention and the light emitting element mounting substrate A light emitting element mounted on the light reflecting layer of the light emitting element mounting substrate, the glass lid sealing the inside of the light emitting element mounting package, and the light reflecting layer; And a sealing material layer disposed between the glass lid and the glass lid.
  • the present invention it is possible to provide a light emitting element mounting substrate that can exhibit high airtightness when the light emitting element is mounted and sealed.
  • FIG. 1 is a schematic sectional view showing a light emitting element mounting substrate according to an embodiment of the present invention.
  • FIG. 2 is a schematic bottom view of a light emitting element mounting substrate according to an embodiment of the present invention.
  • FIG. 3 is a schematic cross-sectional view showing a modification of the light emitting element mounting substrate according to the embodiment of the present invention.
  • 4A to 4D are schematic cross-sectional views for explaining a method for manufacturing a light emitting element mounting substrate according to an embodiment of the present invention.
  • FIG. 5 is a schematic cross-sectional view showing a light emitting element mounting package according to an embodiment of the present invention.
  • 6A to 6D are schematic cross-sectional views for explaining a method for manufacturing a light emitting element mounting package according to an embodiment of the present invention.
  • FIG. 7 is a schematic cross-sectional view showing a light emitting element mounting package of a comparative example.
  • FIG. 1 is a schematic sectional view showing a light emitting element mounting substrate according to an embodiment of the present invention.
  • FIG. 2 is a schematic bottom view of the light emitting element mounting substrate according to the embodiment of the present invention.
  • the light emitting element mounting substrate 1 includes an aluminum nitride substrate 2, a light reflecting layer 3, wiring electrodes 4a and 4b, through-hole electrodes 5a and 5b, and terminal electrodes 6a and 6b.
  • the light emitting element mounting substrate 1 is a substrate for mounting a light emitting element such as a deep ultraviolet LED.
  • the aluminum nitride substrate 2 has first and second main surfaces 2a and 2b.
  • the first and second main surfaces 2a and 2b face each other.
  • wiring electrodes 4a and 4b are provided on the first main surface 2a of the aluminum nitride substrate 2.
  • the wiring electrodes 4a and 4b are electrodes for connecting to the light emitting element.
  • terminal electrodes 6 a and 6 b are provided on the second main surface 2 b of the aluminum nitride substrate 2.
  • the terminal electrodes 6a and 6b are electrodes for connecting to the outside.
  • the aluminum nitride substrate 2 is provided with through holes 7a and 7b.
  • the through holes 7a and 7b are provided from the first main surface 2a to the second main surface 2b.
  • through-hole electrodes 5a and 5b are provided in the through-holes 7a and 7b.
  • the through-hole electrodes 5a and 5b connect the wiring electrodes 4a and 4b and the terminal electrodes 6a and 6b.
  • a light emitting element mounting region 2 c for mounting a light emitting element is provided on the first main surface 2 a of the aluminum nitride substrate 2.
  • a frame-shaped light reflecting layer 3 is provided so as to surround the light emitting element mounting region 2c.
  • the light reflecting layer 3 is provided so as to cover the through holes 7a and 7b. More specifically, the light reflecting layer 3 is provided so as to seal the through holes 7a and 7b.
  • the light reflection layer 3 can be comprised by glass ceramics, for example.
  • the aluminum nitride substrate 2 is used in the light emitting element mounting substrate 1 of this embodiment, the heat dissipation is excellent. Moreover, since it has the light reflection layer 3, it has a high reflectance. Further, in the light emitting element mounting substrate 1, the light reflecting layer 3 is provided so as to cover the through holes 7 a and 7 b of the aluminum nitride substrate 2, and the through holes 7 a and 7 b are sealed by the light reflecting layer 3. . Therefore, airtightness can be enhanced when the light emitting element is mounted and sealed. This will be described in detail in the section of the light emitting element mounting package described later.
  • the inner side surface 3 a of the light reflecting layer 3 is formed to extend in a substantially vertical direction with respect to the aluminum nitride substrate 2.
  • the inner side surface 3a of the light reflecting layer 3 may have a tapered shape that expands from the lower surface 3c toward the upper surface 3b.
  • a light-transmitting functional layer may be provided on the inner side surface 3 a of the light reflecting layer 3.
  • the functional layer include a protective coating layer, a wavelength filter layer, a light diffusion layer, an interference layer, and the like against scratches, dirt, chemical corrosion, and the like.
  • the aluminum nitride substrate is made of aluminum nitride.
  • the aluminum nitride substrate may contain a sintering aid for sintering aluminum nitride such as an yttrium compound or a tungsten compound.
  • the light reflection layer can be made of glass ceramics, for example.
  • a mixed powder of glass powder and ceramic powder, or crystalline glass powder can be used.
  • glass powder examples include SiO 2 —B 3 O 3 glass, SiO 2 —RO glass (R represents an alkaline earth metal), SiO 2 —Al 2 O 3 glass, SiO 2 —ZnO glass, SiO 2 —R 2 O-based glass (R represents an alkali metal), SiO 2 —TiO 2 -based glass, or the like can be used. These glass powders may be used alone or in combination.
  • alumina, zirconia, titania or the like can be used as the ceramic powder. These ceramic powders may be used alone or in combination.
  • the material of the functional layer is not particularly limited, glass such as silicate glass, metal oxide such as silica, alumina, zirconia, tantalum oxide, or niobium oxide, resin such as polymethyl methacrylate, polycarbonate, or polyacrylate Is mentioned. These materials may be used alone or in combination.
  • an aluminum nitride substrate 2A before firing is prepared.
  • through holes 7a and 7b are formed in the prepared pre-fired aluminum nitride substrate 2A.
  • the method for forming the through holes 7a and 7b is not particularly limited, and for example, the through holes 7a and 7b can be formed by machining with a drill or laser processing.
  • wiring electrodes 4a and 4b, through-hole electrodes 5a and 5b, and terminal electrodes 6a and 6b are formed.
  • each electrode is not particularly limited, but can be formed by printing, for example. It does not specifically limit as a paste used for printing, For example, pastes, such as silver, copper, gold
  • the through-hole electrodes 5a and 5b are filled with the paste for forming the through-hole electrodes 5a and 5b.
  • the paste for forming the wiring electrodes 4a and 4b is formed on the aluminum nitride substrate 2A before firing. And it can carry out by printing the paste for terminal electrode 6a, 6b formation.
  • the aluminum nitride substrate 2A and each paste before firing are fired.
  • the aluminum nitride substrate 2, the wiring electrodes 4a and 4b, the through-hole electrodes 5a and 5b, and the terminal electrodes 6a and 6b are formed.
  • the paste is fired in a nitrogen atmosphere.
  • gold, silver, or an alloy containing silver is used as the material constituting each paste, the paste is fired in the atmosphere.
  • the firing temperature is preferably 1200 ° C. or lower.
  • the firing temperature exceeds 1200 ° C., the surface of the aluminum nitride may be oxidized and the thermal conductivity may be lowered.
  • each electrode for example, gold plating can be performed.
  • the plating method include electroless plating and electrolytic plating, and can be appropriately selected depending on the thickness of the plating layer.
  • a light reflecting layer 3 is formed on the aluminum nitride substrate 2. At this time, the light reflecting layer 3 is formed so as to cover the through holes 7a and 7b. Thereby, the through holes 7a and 7b are sealed, and the light emitting element mounting substrate 1 can be obtained.
  • the light reflecting layer 3 is preferably formed of glass ceramics. In this case, the light reflectance can be further increased, and the adhesiveness with the aluminum nitride substrate 2 can be further increased.
  • the method for forming the light reflecting layer 3 is not particularly limited, and examples thereof include a screen printing method and a green sheet laminating method.
  • a high viscosity paste prepared by adding a resin binder and a solvent to the glass ceramic powder and kneading is used with a screen printing machine. This can be done by printing on the aluminum nitride substrate 2.
  • a slurry is prepared by adding a resin binder, a plasticizer and a solvent to the glass ceramic powder and kneading them. Subsequently, the prepared slurry is formed into a green sheet using a sheet forming machine such as a doctor blade. Next, the obtained green sheet is punched into the shape of the light reflecting layer 3 and laminated on the aluminum nitride substrate 2 by pressure bonding.
  • the firing can be performed in two stages, that is, a resin removal binder and a main firing in which the glass ceramic powder is sintered.
  • the deresin binder can be performed at 400 ° C. to 600 ° C. Further, the main baking can be performed at, for example, 850 ° C. to 1000 ° C.
  • the aluminum nitride substrate 2 In the manufacturing method of the light emitting element mounting substrate 1, since the aluminum nitride substrate 2 is used, heat dissipation is excellent. Moreover, since the light reflection layer 3 is provided, it has a high reflectance. Further, in the light emitting element mounting substrate 1, since the light reflecting layer 3 is formed so as to seal the through holes 7a and 7b of the aluminum nitride substrate 2, airtightness is achieved when the light emitting element is mounted and sealed. Can be increased. This will be described in detail in the section of the light emitting element mounting package described later.
  • FIG. 5 is a schematic cross-sectional view showing a light emitting element mounting package according to an embodiment of the present invention.
  • the light emitting element mounting package 21 includes a light emitting element mounting substrate 1, a glass lid 8, a sealing material layer 9, and a light emitting element 10.
  • the light emitting element mounting substrate 1 is a light emitting element mounting substrate according to an embodiment of the present invention described above.
  • the light emitting element 10 is mounted on the light emitting element mounting substrate 1.
  • the light emitting element 10 is connected to the wiring electrodes 4 a and 4 b of the light emitting element mounting substrate 1.
  • Examples of the light emitting element 10 include a deep ultraviolet LED and a white LED in which a blue LED and a yellow phosphor are combined.
  • a glass lid 8 is disposed on the upper surface 3 b of the light reflecting layer 3 in the light emitting element mounting substrate 1.
  • the glass lid 8 is a member for sealing the inside of the light emitting element mounting package 21.
  • a sealing material layer 9 is provided between the light reflecting layer 3 and the glass lid 8. The light reflecting layer 3 and the glass lid 8 are joined by the sealing material layer 9.
  • the light emitting element mounting package 21 since the aluminum nitride substrate 2 is used for the light emitting element mounting substrate 1, heat dissipation is excellent. Further, since the light reflecting layer 3 is used for the light emitting element mounting substrate 1, the reflectance is increased. Furthermore, since the light emitting element mounting package 21 is sealed with the glass lid 8 instead of the resin, it does not deteriorate due to ultraviolet rays and does not lower the airtightness like the resin. Further, since the light reflecting layer 3 is provided so as to cover the through holes 7a and 7b of the aluminum nitride substrate 2, the through holes 7a and 7b are sealed, and the airtightness is further enhanced. Furthermore, the light emitting element mounting package 21 is excellent in durability against ultraviolet rays because the constituent materials are all inorganic materials.
  • FIG. 7 is a schematic cross-sectional view showing a light emitting element mounting package of a comparative example.
  • the through holes 107a and 107b are not provided at positions overlapping the light reflecting layer 103 in plan view. More specifically, the through holes 107 a and 107 b are not sealed by the light reflecting layer 103. Therefore, even when the light emitting element mounting substrate 100 is sealed with the glass lid 108, moisture may enter through the through holes 107a and 107b. More specifically, moisture may enter from the interface between the aluminum nitride substrate 102 and the through-hole electrodes 105a and 105b in the through-holes 107a and 107b. Therefore, in the light emitting element mounting package 101 of the comparative example, the airtightness is not sufficiently improved.
  • the through holes 7a and 7b are sealed by the light reflecting layer 3. Therefore, the light reflection layer 3 can prevent moisture from entering through the through holes 7a and 7b. More specifically, the light reflection layer 3 can prevent moisture from entering from the interface between the aluminum nitride substrate 2 and the through-hole electrodes 5a and 5b. Thus, in the light emitting element mounting package 21, since the light reflection layer 3 can prevent moisture from entering, the airtightness is improved.
  • FIGS. 6A to 6D are schematic cross-sectional views for explaining a method for manufacturing a light emitting element mounting package according to an embodiment of the present invention.
  • the light emitting element mounting substrate 1 shown in FIG. 6B the light emitting element 10 is mounted on the light emitting element mounting substrate 1.
  • the connection between the light emitting element 10 and the light emitting element mounting substrate 1 can be performed by, for example, a connection by a solder hole or a connection by a wire bond.
  • a sealing material is printed on the upper surface 3 b of the light reflecting layer 3. After the sealing material is printed, it is dried and heat-treated to sinter the sealing material to form a sealing material layer 9 shown in FIG.
  • the sealing material layer 9 may be formed on the glass lid 8 side, or may be formed on both the glass lid 8 side and the light reflecting layer 3 side.
  • a glass lid 8 is disposed on a portion where the sealing material layer 9 is provided on the upper surface 3 b of the light reflecting layer 3.
  • the glass lid 8 may be arranged so that at least a part thereof overlaps the portion where the sealing material layer 9 is provided in a plan view. But it is preferable to arrange
  • a laser is irradiated from a laser light source to soften the sealing material layer 9, and the light reflecting layer 3 And the glass cover 8 is joined.
  • the inside is hermetically sealed, and the light emitting element mounting package 21 is obtained.
  • the laser for example, a laser having a wavelength of 600 nm to 1600 nm can be used.
  • Glass lid As the glass constituting the glass lid, ultraviolet transmissive glass is preferable.
  • Specific examples of the glass constituting the glass lid include SiO 2 —B 2 O 3 —RO (R is Mg, Ca, Sr or Ba) -based glass, SiO 2 —B 2 O 3 —R ′ 2 O (R ′ Includes Li, Na or Ka) glass, SiO 2 —B 2 O 3 —RO—R ′ 2 O (R ′ is Li, Na, or Ka) glass, and the like.
  • the sealing material for forming the sealing material layer is a low melting point sealing glass such as Bi 2 O 3 glass powder, SnO—P 2 O 5 glass powder, or V 2 O 5 —TeO 2 glass powder. It is preferable that it contains. In particular, when sealing is performed by irradiating with a laser, the sealing glass has a low softening point in view of the necessity of softening the sealing material by heating for a shorter time and further enhancing the bonding strength. More preferably, powder is used. Further, the sealing material may contain a low expansion refractory filler, a laser absorber and the like.
  • Examples of the low expansion refractory filler include cordierite, willemite, alumina, zirconium phosphate compounds, zircon, zirconia, tin oxide, quartz glass, ⁇ -quartz solid solution, ⁇ -eucryptite, and spodumene.
  • Examples of the laser absorbing material include compounds such as at least one metal selected from Fe, Mn, Cu and the like or an oxide containing the metal.
  • Example 1 In Example 1, the light emitting element mounting package 21 shown in FIG. 5 was produced.
  • through holes 7a and 7b having a diameter of 0.2 mm were formed at two locations on the aluminum nitride substrate 2 having a thickness of 0.3 mm using a semiconductor laser.
  • a silver paste is filled into the through holes 7a and 7b through a metal mask, and the silver paste is printed with a wiring width of 0.2 mm, so that the first and second main surfaces 2a, 2a of the aluminum nitride substrate 2 are printed. Electrical connection was made in 2b.
  • a silver paste for forming the wiring electrodes 4a and 4b was printed on the first main surface 2a.
  • the silver paste for terminal electrode 6a, 6b formation was printed on the 2nd main surface 2b.
  • the aluminum nitride substrate 2 coated with each silver paste was baked at a temperature of 850 ° C. for 20 minutes in the air.
  • thermocompression bonding was performed at a position where the through holes 7 a and 7 b were completely sealed by the light reflecting layer 3.
  • a green sheet was formed on the aluminum nitride substrate 2 and fired using an electric furnace. In order to vaporize the resin binder contained in the silver paste and the green sheet, it was held at 500 ° C. for 2 hours, and then held at 850 ° C. for 1 hour in order to sinter silver and glass ceramics.
  • the obtained light emitting element mounting substrate 1 was subjected to nickel plating and gold plating, and a deep ultraviolet LED as the light emitting element 10 was mounted using a solder hole. Subsequently, a glass frit is applied to the upper surface 3b of the light reflecting layer 3, an ultraviolet ray transmitting glass as a glass lid 8 is attached, and laser sealing is performed to obtain a light emitting element mounting package 21 on which deep ultraviolet LEDs are mounted. It was.
  • Comparative Example 1 In Comparative Example 1, the light emitting element mounting package 101 shown in FIG. 7 was manufactured.
  • a light emitting element mounting package 101 was produced in the same manner as in Example 1 except that the through holes 107a and 107b were formed at positions where they did not overlap the light reflecting layer 103.
  • Example 1 The light emitting element mounting packages 21 and 101 obtained in Example 1 and Comparative Example 1 were held in a pressure vessel for 24 hours under the conditions of 121 ° C., 2 atm and 100% humidity, respectively. As a result, in Example 1, no change was observed, but in Comparative Example 1, condensation was observed inside the package. As a result, it was confirmed that the light-emitting element mounting package 21 of Example 1 had higher airtightness than the light-emitting element mounting package 101 of Comparative Example 1.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un substrat de montage d'élément électroluminescent pouvant présenter une herméticité élevée lorsqu'un élément électroluminescent est monté et scellé. La présente invention est caractérisée en ce qu'elle comprend un substrat de nitrure d'aluminium 2, des électrodes de câblage 4a et 4b qui sont disposées sur une première surface principale 2a du substrat de nitrure d'aluminium 2 et qui sont destinées à être reliées à un élément électroluminescent, des électrodes de borne 6a et 6b qui sont disposées sur une seconde surface principale 2b du substrat de nitrure d'aluminium 2, des électrodes à trou traversant 5a et 5b qui sont disposées à l'intérieur du substrat de nitrure d'aluminium 2 et connectent les électrodes de câblage 4a et 4b aux électrodes de borne 6a et 6b, et une couche de réflexion de lumière en forme de châssis 3 qui est disposée sur la première surface principale 2a du substrat de nitrure d'aluminium 2, des trous traversants 7a et 7b étant disposés dans le substrat de nitrure d'aluminium 2 de façon à s'étendre de la première surface principale 2a à la seconde surface principale 2b, les électrodes à trou traversant 5a et 5b sont disposées à l'intérieur des trous traversants 7a et 7b, et les trous traversants 7a et 7b sont scellés par la couche de réflexion de lumière 3
PCT/JP2017/021410 2016-09-23 2017-06-09 Substrat de montage d'élément électroluminescent, son procédé de fabrication, et boîtier de montage d'élément électroluminescent WO2018055846A1 (fr)

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JP2016185747A JP2018049991A (ja) 2016-09-23 2016-09-23 発光素子搭載用基板及びその製造方法、並びに発光素子搭載パッケージ
JP2016-185747 2016-09-23

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022223370A1 (fr) * 2021-04-20 2022-10-27 Osram Opto Semiconductors Gmbh Composant semiconducteur opto-électronique

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2020057736A (ja) * 2018-10-04 2020-04-09 日本電気硝子株式会社 気密パッケージ

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Publication number Priority date Publication date Assignee Title
JP2006100688A (ja) * 2004-09-30 2006-04-13 Tokuyama Corp 発光素子収納用パッケージの製造方法
JP2007284333A (ja) * 2006-03-20 2007-11-01 Sumitomo Metal Electronics Devices Inc 高反射白色セラミックス及びリフレクター及び半導体発光素子搭載用基板及び半導体発光素子収納用パッケージ
WO2013002113A1 (fr) * 2011-06-29 2013-01-03 京セラ株式会社 Corps fritté en vitrocéramique, élément réfléchissant le comprenant, substrat de montage d'élément électroluminescent comprenant ledit élément réfléchissant et dispositif électroluminescent
JP2016119477A (ja) * 2014-12-23 2016-06-30 エルジー イノテック カンパニー リミテッド 発光素子及び照明システム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006100688A (ja) * 2004-09-30 2006-04-13 Tokuyama Corp 発光素子収納用パッケージの製造方法
JP2007284333A (ja) * 2006-03-20 2007-11-01 Sumitomo Metal Electronics Devices Inc 高反射白色セラミックス及びリフレクター及び半導体発光素子搭載用基板及び半導体発光素子収納用パッケージ
WO2013002113A1 (fr) * 2011-06-29 2013-01-03 京セラ株式会社 Corps fritté en vitrocéramique, élément réfléchissant le comprenant, substrat de montage d'élément électroluminescent comprenant ledit élément réfléchissant et dispositif électroluminescent
JP2016119477A (ja) * 2014-12-23 2016-06-30 エルジー イノテック カンパニー リミテッド 発光素子及び照明システム

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2022223370A1 (fr) * 2021-04-20 2022-10-27 Osram Opto Semiconductors Gmbh Composant semiconducteur opto-électronique

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