WO2018048266A1 - Dispositif de nettoyage de masque et procédé de nettoyage de masque - Google Patents

Dispositif de nettoyage de masque et procédé de nettoyage de masque Download PDF

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Publication number
WO2018048266A1
WO2018048266A1 PCT/KR2017/009936 KR2017009936W WO2018048266A1 WO 2018048266 A1 WO2018048266 A1 WO 2018048266A1 KR 2017009936 W KR2017009936 W KR 2017009936W WO 2018048266 A1 WO2018048266 A1 WO 2018048266A1
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WO
WIPO (PCT)
Prior art keywords
mask
cleaning
light
frame
organic material
Prior art date
Application number
PCT/KR2017/009936
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English (en)
Korean (ko)
Inventor
박선순
이해룡
박남규
김동훈
지성훈
홍원의
박영일
Original Assignee
주식회사 다원시스
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Priority claimed from KR1020170112067A external-priority patent/KR102009986B1/ko
Application filed by 주식회사 다원시스 filed Critical 주식회사 다원시스
Priority to CN201780056058.XA priority Critical patent/CN109690809B/zh
Publication of WO2018048266A1 publication Critical patent/WO2018048266A1/fr

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B08—CLEANING
    • B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
    • B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10—Deposition of organic active material
    • H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask

Definitions

  • the present invention relates to a mask cleaning apparatus and a mask cleaning method, and more particularly, to a mask cleaning system and a mask cleaning method for cleaning an organic substance remaining on a surface of a metal mask for an organic light emitting device.
  • the organic light emitting display device has a high response speed, low power consumption, and self-luminous light, so that there is no problem in viewing angle, and thus it is advantageous as a moving image display medium regardless of the size of the device.
  • low-temperature manufacturing is possible, and the manufacturing process is simple based on the existing semiconductor process technology has attracted attention as a next-generation flat panel display device in the future.
  • the organic film used in the organic light emitting display device emits light by itself, the organic film may be used in an OLED lighting device by applying an electric field to the upper and lower ends of the organic film. OLED lighting is attracting great attention as the next generation lighting because conventional LED lighting is a surface light source, whereas an existing LED light is a surface light source.
  • the formation of the organic thin film in the organic light emitting display device and the OLED lighting manufacturing process can be largely divided into a high molecular type device using a wet process and a low molecular type device using a deposition process according to the materials and processes used.
  • a high molecular type device using a wet process a low molecular type device using a deposition process
  • the materials of the organic layers other than the light emitting layer are limited, and there is a need to form a structure for inkjet printing on the substrate.
  • a separate metal mask can be used.
  • the surface thereof may be easily contaminated by organic material or foreign matter.
  • the present invention is to solve a number of problems, including the above problems, by using the cleaning light to evaporate the organic matter or foreign matter instantaneously to reduce the cleaning time and cost, greatly improve the productivity, and minimize damage to the metal mask It is possible to extend the life of the mask, recover the organic matter evaporated by the cleaning light, economical, waste-free, environmentally friendly, and easy to apply to the existing mask recovery line to reduce the additional installation cost It is an object of the present invention to provide a mask cleaning system and a mask cleaning method.
  • these problems are exemplary, and the scope of the present invention is not limited thereby.
  • an accommodating space for accommodating a mask is formed therein, and a vacuum environment is formed therein to facilitate removal of organic matter remaining in the mask.
  • a controller configured to apply pulsed wave power to the first cleaning light irradiation device.
  • the mask is a fine metal mask (FMM) for manufacturing an organic light emitting display device
  • the first cleaning light irradiation device is provided with a first xenon lamp to remove the organic material remaining in the mask.
  • the first pulse wave power having the first intensity or the first pulse application time may be applied from the controller to generate a first IPL (Intense Pulse Light).
  • the first cleaning light irradiation apparatus the second intensity stronger than the first intensity or the first pulse to the first xenon lamp to remove the organic matter remaining in the frame supporting the mask.
  • the second pulse wave power having a second pulse application time longer than the application time may be applied from the controller to generate a second IPL (Intense Pulse Light).
  • the cleaning apparatus for a mask according to the present invention is relative to each other so that the mask or the first cleaning light irradiation apparatus can be irradiated with the cleaning light generated by the first cleaning light irradiation apparatus to partially irradiate or scan the mask. It may further include a mask moving device for moving to.
  • the mask and the apparatus when irradiating the cleaning light to the frame supporting the mask, the mask and the apparatus may be partially irradiated or scanned by a first width by rotating the mask and the frame at a first angle.
  • the vacuum chamber or the mask moving device may be configured to irradiate the mask with the cleaning light so that the mask and the frame supporting the mask are rotated at a second angle to partially irradiate or scan irradiated by a second width. It may further include a turntable device which is installed in, to turn the mask and the frame angular rotation.
  • the turntable device when irradiating the cleaning light to the frame having a generally rectangular ring shape, rotates the mask and the frame by an angle of 90 degrees so that each of the four frame members is divided by their respective widths. Irradiation or scanning can be investigated.
  • the apparatus for cleaning a mask according to the present invention may include a second intensity stronger than a first intensity or a wider time than the first pulse application time in a second xenon lamp so as to remove organic matter remaining in a frame supporting the mask.
  • a second cleaning light irradiation device configured to generate a second IPL (Intense Pulse Light) by receiving a second pulse wave power source having a two pulse application time from the control unit.
  • the apparatus for cleaning a mask according to the present invention may further include a first band pass filter which may be installed in the optical path of the cleaning light and passes light of a first wavelength band having excellent resolution of the first organic material. have.
  • the cleaning apparatus of the mask according to the present invention may be installed in the optical path of the cleaning light, the second band pass filter for passing the light of the second wavelength band excellent in the resolution of the second organic material; may further include a have.
  • the apparatus may further include.
  • the first cleaning light irradiation apparatus is provided outside the vacuum chamber with a first reflector that reflects the cleaning light in the vacuum chamber direction, and the vacuum chamber forms a vacuum environment.
  • a vacuum pump may be installed so that the vacuum pump may be installed, and a first transparent window may be formed on one side of the first cleaning light through which the cleaning light of the first cleaning light irradiation apparatus is introduced and irradiated onto the mask.
  • the organic material is installed inside the vacuum chamber or between the first transparent window and the mask so that the organic material can be trapped and recovered on the surface without contaminating the first transparent window. It may further include a recovery panel.
  • the first cleaning light irradiation apparatus is provided inside the vacuum chamber together with a second reflector that reflects the cleaning light in the mask direction, and the second reflector is provided inside the vacuum chamber.
  • a band pass filter or a second transparent window that transmits the cleaning light may be formed to protect the first cleaning light irradiation device.
  • the cleaning method of the mask according to the spirit of the present invention for solving the above problems, the first step of accommodating the mask in a vacuum chamber to facilitate the removal of organic matter remaining in the mask; And a second step of decomposing and separating and removing the organic material from the mask by irradiating the IPL (Intense Pulse Light) on the organic material in the vacuum environment.
  • IPL Intelligent Pulse Light
  • the second step is a second step of partially irradiating or scanning irradiating each of the four frame members by their respective widths by rotating the frame supporting the mask by an angle of 90 degrees using a turntable device.
  • Stage 1 a step 2-2 of moving the mask by using a mask moving device to perform partial irradiation or scanning irradiation of the mask step by step.
  • the IPL irradiated in step 2-1 and the IPL irradiated in step 2-2 may have different pulse intensity or pulse application time.
  • the IPL in the second step, may be irradiated by transporting at least one band pass filter in the optical path according to the type of the organic material.
  • FIG. 1 is a cross-sectional view conceptually illustrating an apparatus for cleaning a mask according to some embodiments of the present disclosure.
  • FIG. 2 is a graph showing an example of pulse waves applied to the first xenon lamp of the cleaning apparatus of the mask of FIG. 1.
  • FIG. 3 is a graph showing another example of a pulse wave applied to the first xenon lamp of the cleaning device of the mask of FIG. 1.
  • 4 to 7 are plan views illustrating a frame cleaning mode of the cleaning apparatus of the mask of FIG. 1.
  • FIG. 8 to 10 are plan views illustrating a mask cleaning mode of the cleaning apparatus of the mask of FIG. 1.
  • FIG. 11 is a cross-sectional view conceptually illustrating an apparatus for cleaning a mask according to some other embodiments of the present disclosure.
  • FIG. 12 is a graph showing an example of pulse waves applied to the first xenon lamp and the second xenon lamp of the cleaning apparatus of the mask of FIG. 12.
  • FIG. 13 is a cross-sectional view conceptually illustrating an apparatus for cleaning a mask according to some other embodiments of the present disclosure.
  • FIG. 14 is a cross-sectional view conceptually illustrating an apparatus for cleaning a mask according to some other embodiments of the present disclosure.
  • 15 is a cross-sectional view conceptually illustrating an apparatus for cleaning a mask according to some other embodiments of the present disclosure.
  • 16 is a flowchart illustrating a method of cleaning a mask according to some embodiments of the present invention.
  • 17 is a flowchart illustrating an example of a frame irradiation process in detail in the mask cleaning method of FIG. 16.
  • FIG. 1 is a cross-sectional view conceptually illustrating a cleaning apparatus 100 of a mask according to some embodiments of the present disclosure.
  • the cleaning device 100 of a mask may include a vacuum chamber 10 and a first cleaning light irradiation device 20.
  • the vacuum chamber 10 has an accommodating space for accommodating the mask FMM therein, and removal of the organic material 1 remaining in the mask FMM is prevented. It may be a kind of box-type structure that can be sealed to facilitate the formation of a vacuum environment therein.
  • a vacuum pump P may be installed so that a vacuum environment is formed therein.
  • the vacuum chamber 10 is not necessarily limited to the drawings.
  • various gates or doors may be formed to allow the mask FMM to enter and exit, and in addition, to perform a continuous process.
  • Various types of process chambers, buffer chambers or load lock chambers may be connected.
  • the mask FMM is a fine metal mask (FMM) for manufacturing an organic light emitting display device, and may be a metal mask made of Invar material used for depositing an organic material on a substrate for an organic light emitting device.
  • the mask FMM is the organic material 1 remaining on the surface after the deposition process, and may be a single mask having sufficient strength and durability without the need of the frame F, as shown in FIG. 1.
  • a square ring-shaped frame F may be installed to support the mask FMM so that the mask FMM maintains sufficient strength and durability. have.
  • FIG. 1 a mask FMM having the frame F is illustrated, but the mask FMM is not limited to the drawings, and all kinds of masks may be applied.
  • the first cleaning light irradiation apparatus 20 applies light energy to the organic material 1 in the vacuum environment formed in the vacuum chamber 10 described above, so that the enlarged portion of FIG.
  • the organic material 1 is extracted from the mask FMM, for example, a first-first substance 1-1 such as oxygen, a hydrogen atom, a molecule or an ion, and a second 1-2 such as a carbon atom, a molecule or an ion.
  • It may be a light irradiation device that can irradiate the cleaning light (L) to the mask (FMM) accommodated in the vacuum chamber 10 so as to be decomposed and separated by the material (1-2).
  • the xenon flash light may have a bandwidth of 200 to 1100 nm, and among these, only a light of a desired region may be selectively used using a band pass filter or the like.
  • the power applied to the xenon lamp may be either a continuous power or a pulsed power.
  • the cleaning light L may be irradiated throughout the entire area of the mask FMM or may be irradiated in a scanning process while relatively moving the mask FMM in a line beam manner. It is possible.
  • the first cleaning light irradiation apparatus 20 includes the vacuum chamber 10 together with the first reflector R1 reflecting the cleaning light L toward the vacuum chamber 10. Can be installed outside of.
  • the first cleaning light irradiation device 20 can be easily repaired, replaced, managed, or operated, and the various types The calorific value can be easily discharged to the outside.
  • the vacuum chamber 10 the cleaning light (L) of the first cleaning light irradiation apparatus 20 is introduced to the cleaning light (L) on one side so that the irradiation to the mask (FMM).
  • a first transparent window 11 for transmitting may be formed.
  • the first transparent window 11 may be made of any light transmitting material such as quartz, glass or sapphire, which may pass the cleaning light L while maintaining the vacuum or airtight inside the vacuum chamber 10.
  • the first reflector R1 may minimize an optical loss by applying an IPL (Intense Pulse Light) reflector, that is, an advanced optical design and a skilled optical surface processing technology, and to the entire light energy irradiation region.
  • IPL Intelligent Pulse Light
  • Uniform energy density of more than 10 percent can be achieved, high energy density of up to 10 J / cm 2 or more can be achieved, certification can be achieved, installation in tight spaces, material characteristics and It is also possible to optimize the process environment depending on the cleaning conditions.
  • a first xenon lamp LAMP1 may be applied to remove the organic material 1 remaining in the mask FMM.
  • various lamps capable of generating light energy of various forms or wavelengths capable of decomposing the organic material 1 may all be applied.
  • FIG. 2 is a graph showing an example of a pulse wave applied to the first xenon lamp LAMP1 of the cleaning device 100 of the mask of FIG. 1.
  • the cleaning apparatus 100 of the mask may include a controller 30 capable of applying pulsed wave power to the first cleaning light irradiation apparatus 20. It may further include.
  • the first xenon A first pulse wave power source having a first intensity V1 or a first pulse application time T1 may be applied to the lamp LAMP1 from the controller 30 to generate a first IPL L1.
  • the first IPL L1 may include light having a wavelength band optimized according to the type of the organic material 1, and may include, for example, light in an ultraviolet region.
  • the present invention is not limited thereto, and may include light having a broad wavelength such as visible light or infrared light.
  • FIG. 3 is a graph showing another example of a pulse wave applied to the first xenon lamp LAMP1 of the cleaning device 100 of the mask of FIG. 1.
  • the first cleaning light irradiation apparatus 20 in the first xenon lamp (LAMP1) A frame that receives the first pulse wave power source having the intensity V1 or the first pulse application time T1 from the controller 30 to generate the first IPL L1, and supports the mask FMM ( In the frame cleaning mode in which the organic material 1 remaining in F) is removed, the second intensity V2 or the first pulse application time (T1) stronger than the first intensity V1 is applied to the first xenon lamp LAMP1.
  • a second pulse wave power source having a wider second pulse application time T2 than T1) may be applied from the controller 30 to generate a second IPL L2.
  • the thickness of the frame F is much thicker than the thickness of the mask FMM, a much larger amount of energy is required to remove the organic material 1 remaining in the frame F.
  • the thickness of the mask FMM is so thin that excessive energy is applied, the mask FMM may be easily deformed, broken, or burned.
  • the frame cleaning mode is performed, and then the mask cleaning mode is performed, thereby minimizing the influence of the organic materials 1 remaining in the frame F on the mask FMM.
  • the present invention is not limited to performing the frame cleaning first, and conversely, the mask FMM and the frame F may be used in a variety of ways, such as the mask FMM cleaning or the frame cleaning and the mask cleaning at the same time. This can be cleaned.
  • the technical idea of the present invention is not limited to the drawings, for example, a downward irradiation lamp as well as the downward irradiation lamp shown in the drawing is applied, or the mask (FMM) and the frame (F) of As the contaminated surface is shown, in addition to the upward bottom-up, it is possible to be applied in a wide variety of ways, such as the downward top-down.
  • 4 to 7 are plan views illustrating a frame cleaning mode of the cleaning apparatus 100 of the mask of FIG. 1.
  • the mask cleaning apparatus 100 may include the mask FMM and the mask in the above-described mask cleaning mode or the above-described frame cleaning mode.
  • the apparatus may further include a mask moving device 40 for moving the frame F and a turntable device 50 for rotating the mask FMM and the frame F in the above-described frame cleaning mode.
  • the cleaning light L generated in the first cleaning light irradiation device 20 partially irradiates or scans the mask FMM.
  • Various types of moving devices such as various conveyor devices, belt devices, roller devices, transfer robots, transfer lines or transfer trucks, may all be applied.
  • the mask (FMM) and the frame (F) can be rotated at a first angle to perform partial irradiation or scanning irradiation by the first width (W1-1) (W1-2) (W1-3) (W1-4),
  • the mask and the frame F supporting the mask may be rotated at a second angle so that partial irradiation or scanning irradiation may be performed by the second width W2.
  • the apparatus may be installed in the vacuum chamber 10 or the mask moving device 40 and may rotate the mask FMM and the frame F.
  • the turntable device 50 may be applied to various types of rotating devices such as various susceptors, spinners, rotating robots, rotating tables, rotating plates, etc., which may rotate an object using a motor, a rotating power transmission device, or a hydraulic / pneumatic cylinder. have.
  • rotating devices such as various susceptors, spinners, rotating robots, rotating tables, rotating plates, etc., which may rotate an object using a motor, a rotating power transmission device, or a hydraulic / pneumatic cylinder. have.
  • the first xenon lamp LAMP1 partially irradiates the first frame member F1 by the width W1-1. Or scanning can be done.
  • the first xenon lamp LAMP1 is rotated by rotating the mask FMM and the frame F in a state of 90 degrees using the turntable device 50.
  • the frame member F2 includes the width W1-2, partial irradiation or scanning irradiation can be performed.
  • damage to the mask FMM may be minimized by preventing the mask FMM from being included in a region to which cleaning light is irradiated.
  • the first xenon lamp LAMP1 is rotated by rotating the mask FMM and the frame F in a state of 180 degrees using the turntable device 50.
  • the frame member F3 includes the width W1-3, partial irradiation or scanning irradiation can be performed.
  • the first xenon lamp LAMP1 is rotated by rotating the mask FMM and the frame F at a state of 270 degrees using the turntable device 50.
  • the frame member F4 includes the width W1-4, partial irradiation or scanning irradiation can be performed.
  • the mask FMM and the frame F are rotated by an angle of 90 degrees, respectively, so that four frame members F1, F2, and F3 are rotated.
  • F4 may be partially irradiated or scanned by respective widths W1-1, W1-2, W1-3, and W1-4. In the process, even if the region of light irradiated to the frame members overlaps, the cleaning light is not irradiated to the mask FMM so that the heat deformation or local heating or pattern of the mask FMM due to excessive irradiation of the cleaning light. Damage can be minimized.
  • the first xenon lamp LAMP1 may be a fixed type in which the position is not moved.
  • the present invention is not limited thereto, and the first xenon lamp LAMP1 may be movable or rotated.
  • FIG. 8 to 10 are plan views illustrating a mask cleaning mode of the cleaning apparatus 100 of the mask of FIG. 1.
  • the mask cleaning mode may be performed as shown in FIGS. 8 to 10. .
  • the mask FMM is first operated by using the mask moving device 40 while maintaining the mask FMM and the frame F at 270 degrees.
  • the first xenon lamp LAMP1 may partially irradiate or scan a third portion of the mask FMM.
  • the mask FMM is advanced by two stages using the mask moving device 40, and the first xenon lamp LAMP1 is two-thirds of the mask FMM. Can be partially irradiated or scanned irradiated.
  • the mask FMM is advanced in three steps by using the mask moving device 40, and the first xenon lamp LAMP1 is a third part of the mask FMM.
  • the first xenon lamp LAMP1 exemplarily cleans the mask FMM three times for convenience. Or it can be integrated or phased out over a number of times.
  • the first xenon lamp LAMP1 may not adversely affect the frame F even when the mask FMM is irradiated while invading the area of the frame F while irradiating the mask FMM.
  • the frame (F) area does not significantly affect the process even if the surface is minutely damaged, and the frame (F) has high strength and durability. It is because it is formed thick and strong so as not to be easily damaged.
  • the productivity is greatly improved by reducing the cleaning time and cost, and the damage of the mask (FMM) is minimized to minimize the damage of the mask (FMM).
  • the organic matter evaporated by the cleaning light (L) can be recovered, economical, waste-free, eco-friendly, and can be easily applied to existing mask recovery lines, thereby reducing additional installation costs. can do.
  • the cleaning apparatus 100 of the mask may be installed in the optical path of the cleaning light (L), the first organic material 1
  • the display device may further include a first band pass filter FT1 configured to pass light having a high resolution in a first wavelength band.
  • the mask cleaning apparatus 100 may suppress damage of the mask FMM by using the first band pass filter FT1 and at the same time reduce the resolution of the organic material 1.
  • High wavelength bands of light can optionally be used.
  • the first band pass filter FT1 selects and passes only the wavelength of the ultraviolet band having excellent resolution of the organic material 1 rather than the wavelength of the infrared band causing thermal deformation of the mask FMM. Can be applied.
  • the present invention is not necessarily limited thereto, and a wide variety of wavelengths may be selectively utilized.
  • the first band pass filter FT1 may pass light of, for example, an infrared band or a near infrared band, having excellent resolution with respect to the organic material for red electroluminescence.
  • the cleaning efficiency can be improved.
  • the present invention is not necessarily limited thereto, and a band pass filter through which various types of light pass may be applied in various forms.
  • FIG. 11 is a cross-sectional view conceptually illustrating a cleaning apparatus 200 of a mask according to some other embodiments of the inventive concept.
  • the mask cleaning apparatus 200 may separately clean the mask FMM and the frame F, respectively.
  • the second cleaning light irradiation device 60 may be further included.
  • the first cleaning light irradiation apparatus 20 may apply the first intensity V1 or the first pulse to the first xenon lamp LAMP1 to remove the organic material 1 remaining in the mask FMM.
  • a first IPL L1 can be generated by applying a first pulse wave power source having a time T1
  • the second cleaning light irradiation device 60 supports the mask FMM in a frame F
  • the second pulse wave power source having the time T2 may be applied to generate the second IPL L2.
  • FIG. 12 is a graph showing an example of pulse waves applied to the first xenon lamp LAMP1 and the second xenon lamp LAMP2 of the cleaning device of the mask of FIG. 12, respectively.
  • the mask FMM and the frame F are simultaneously or sequentially used using the first xenon lamp LAMP1 and the second xenon lamp LAMP2, respectively. It can be cleaned by.
  • the frame F may be cleaned while being rotated by an angle of 90 degrees.
  • FIG. 13 is a cross-sectional view conceptually illustrating an apparatus 300 for cleaning a mask according to some other embodiments of the present invention.
  • the mask cleaning apparatus 300 may be installed in the optical path of the cleaning light L in addition to the first band pass filter FT1. And a second band pass filter FT2 through which light in a second wavelength band having excellent resolution of the second organic material 1 and the first band pass filter FT1 installed in the optical path are transferred to a standby position. And a filter exchange device 70 for transferring the second band pass filter FT2 installed at the standby position to the optical path.
  • the filter exchange device 70 of the sliding slot type that can be replaced while sliding the two band pass filters is illustrated, but in addition, a rotary filter exchange device that replaces a plurality of band pass filters in a rotational manner, or the like.
  • a wide variety of filter changing devices, such as a cartridge method, can all be applied.
  • FIG. 14 is a cross-sectional view conceptually illustrating a cleaning apparatus 400 of a mask according to some other embodiments of the present disclosure.
  • the mask cleaning apparatus 400 is such that the organic material 1 is trapped on the surface without contaminating the first transparent window 11.
  • the organic material recovery panel 12 may be further included in the vacuum chamber 10 or between the first transparent window 11 and the mask FMM to be recovered.
  • the expensive organic materials 1 accumulated on the surface of the organic material recovery panel 12 may be recovered and protected while protecting the first transparent window 11.
  • a cooling device may be installed in the organic material recovery panel 12 so that the organic materials 1 may be cold trapped while being aggregated on a cold surface.
  • various types of trap devices may be applied.
  • 15 is a cross-sectional view conceptually illustrating a cleaning apparatus 500 of a mask according to some other embodiments of the inventive concept.
  • the first cleaning light irradiation apparatus 20 of the cleaning apparatus 500 of the mask may use the mask FMM or the mask FMM.
  • the length of the lamp LAMP1 is at least the width of the mask FMM so that the cleaning light can be cleaned in the supporting frame F so that all areas of the mask FMM or all areas of the frame F can be simultaneously cleaned. W3) or longer than the width W4 of the frame F, and the lamp LAMP1 is disposed in parallel with each other in the width direction of the mask FMM or the frame F.
  • the number of installations of the lamp LAMP1 may include a length L3 of the mask FMM or the frame (B) so that the cleaning lights may simultaneously reach all areas of the mask FMM or the frame F.
  • the total length L4 of F) divided by the minimum width W2 of the lamp irradiation area It may be greater than or equal to the number of installations.
  • the length of the lamp (LAMP1) may be at least 10000 mm or more, in the width direction of the mask (FMM) or the frame (F)
  • the minimum number of installations of the lamp LAMP1 arranged in parallel with each other is the total length L4 of the frame F so that the cleaning light can reach all the regions of the mask FMM or the frame F.
  • FIG. Is 8000 mm and the minimum width W2 of the lamp irradiation area is 2000, it may be four or more divided by 8000 by 2000.
  • the cleaning light is simultaneously irradiated to all regions of the mask FMM or all regions of the frame F supporting the mask FMM. All areas can be cleaned at the same time.
  • this simultaneous cleaning technique is not limited to the drawings, for example, four frame lamps are arranged in a square shape, and a plurality of mask lamps are arranged in parallel, or a plurality of short bar lamps are arranged vertically.
  • a lamp module in the form of a display composed of pixels which are installed upright or separately controlled to have a high resolution it is possible to sufficiently irradiate appropriate cleaning light onto a mask or a frame, respectively.
  • 16 is a flowchart illustrating a method of cleaning a mask according to some embodiments of the present invention.
  • the mask cleaning method may include the mask in the vacuum chamber 10 to facilitate removal of the organic material 1 remaining in the mask FMM.
  • IPL Intense Pulse Light
  • the second step (S2) by using the turntable device 50 to rotate the frame (F) for supporting the mask (FMM) by 90 degrees by four frame members (F1) (F2) (F3)
  • the mask FMM is moved by using the mask moving device 40 and the step 2-1 (S2-1) of partially irradiating or scanning irradiating each of F4 by each width. It may include a step 2-2 (S2-2) of stepped partial irradiation or scanning irradiation step by step.
  • the IPL irradiated in step 2-1 (S2-1) and the IPL irradiated in step 2-2 (S2-2) may have different pulse intensity or pulse application time.
  • the IPL may be irradiated by transferring at least one band pass filter FT1 or FT2 in the optical path according to the type of the organic material 1.
  • FIG. 17 is a flowchart illustrating an example of step 2-1 (S2-1) in more detail in the mask cleaning method of FIG. 16.
  • the first xenon lamp LAMP1 using the mask moving device 40 is, for example, first in a state where the mask FMM and the frame member F1 are 0 degrees. ) May irradiate the first frame member F1.
  • the mask FMM and the frame F are rotated in a state of 90 degrees so that the first xenon lamp LAMP1 irradiates the second frame member F2. Can be.
  • the mask FMM and the frame F are rotated in a state of 180 degrees so that the first xenon lamp LAMP1 may irradiate the third frame member F3. Can be.
  • the mask FMM and the frame F are rotated in a state of 270 degrees so that the first xenon lamp LAMP1 irradiates the fourth frame member F4. Can be.
  • the mask cleaning method of the present invention even if the size of the mask FMM is enlarged, it is possible to uniformly clean all the areas of the mask F as well as the mask FMM step by step.

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne un système de nettoyage de masque et un procédé de nettoyage de masque, des matériaux organiques restant sur la surface d'un masque métallique d'un dispositif électroluminescent organique pouvant être nettoyés. Le système de nettoyage de masque peut comprendre : une chambre sous vide dans laquelle est formé un espace de réception de sorte qu'un masque puisse y être logé et dans laquelle est formé un environnement sous vide de sorte que des matériaux organiques restant sur le masque puissent être facilement retirés ; un premier dispositif d'émission de lumière de nettoyage permettant d'émettre de la lumière de nettoyage vers le masque logé dans la chambre sous vide de sorte que, en appliquant de l'énergie lumineuse aux matériaux organiques dans l'environnement sous vide, les matériaux organiques puissent être décomposés, séparés, et retirés du masque ; et une partie de commande permettant d'appliquer une puissance à ondes pulsées au premier dispositif d'émission de lumière de nettoyage.
PCT/KR2017/009936 2016-09-12 2017-09-11 Dispositif de nettoyage de masque et procédé de nettoyage de masque WO2018048266A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201780056058.XA CN109690809B (zh) 2016-09-12 2017-09-11 掩模清洗装置以及掩模清洗方法

Applications Claiming Priority (4)

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KR10-2016-0117485 2016-09-12
KR20160117485 2016-09-12
KR1020170112067A KR102009986B1 (ko) 2016-09-12 2017-09-01 마스크의 세정 장치 및 마스크 세정 방법
KR10-2017-0112067 2017-09-01

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Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5413664A (en) * 1990-05-09 1995-05-09 Canon Kabushiki Kaisha Apparatus for preparing a semiconductor device, photo treatment apparatus, pattern forming apparatus and fabrication apparatus
KR100463212B1 (ko) * 2001-05-19 2004-12-23 주식회사 아이엠티 건식 표면 클리닝 장치
KR20060115295A (ko) * 2005-05-04 2006-11-08 (주)울텍 태양전지 디바이스 제조용 인라인 장치
KR20090002784A (ko) * 2007-07-04 2009-01-09 주식회사 아이엠티 건식세정장치 및 방법
JP2012078562A (ja) * 2010-10-01 2012-04-19 Toppan Printing Co Ltd マスクケースおよびマスクの洗浄方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5413664A (en) * 1990-05-09 1995-05-09 Canon Kabushiki Kaisha Apparatus for preparing a semiconductor device, photo treatment apparatus, pattern forming apparatus and fabrication apparatus
KR100463212B1 (ko) * 2001-05-19 2004-12-23 주식회사 아이엠티 건식 표면 클리닝 장치
KR20060115295A (ko) * 2005-05-04 2006-11-08 (주)울텍 태양전지 디바이스 제조용 인라인 장치
KR20090002784A (ko) * 2007-07-04 2009-01-09 주식회사 아이엠티 건식세정장치 및 방법
JP2012078562A (ja) * 2010-10-01 2012-04-19 Toppan Printing Co Ltd マスクケースおよびマスクの洗浄方法

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