WO2018048266A1

WO2018048266A1 - Mask cleaning device and mask cleaning method

Info

Publication number: WO2018048266A1
Application number: PCT/KR2017/009936
Authority: WO
Inventors: 박선순; 이해룡; 박남규; 김동훈; 지성훈; 홍원의; 박영일
Original assignee: 주식회사 다원시스
Priority date: 2016-09-12
Filing date: 2017-09-11
Publication date: 2018-03-15

Abstract

The present invention relates to a mask cleaning system and a mask cleaning method, wherein organic materials remaining on the surface of a metal mask for an organic light-emitting device can be cleaned off. The mask cleaning system may comprise: a vacuum chamber having a containing space formed therein such that a mask can be contained therein and having a vacuum environment formed therein such that organic materials remaining on the mask can be easily removed; a first cleaning light emitting device capable of emitting cleaning light to the mask contained in the vacuum chamber such that, by applying light energy to the organic materials in the vacuum environment, the organic materials can be decomposed, separated, and removed from the mask; and a control portion capable of applying pulse-wave power to the first cleaning light emitting device.

Description

Mask cleaning apparatus and mask cleaning method

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a mask cleaning apparatus and a mask cleaning method, and more particularly, to a mask cleaning system and a mask cleaning method for cleaning an organic substance remaining on a surface of a metal mask for an organic light emitting device.

Among the flat panel display devices, the organic light emitting display device has a high response speed, low power consumption, and self-luminous light, so that there is no problem in viewing angle, and thus it is advantageous as a moving image display medium regardless of the size of the device. In addition, low-temperature manufacturing is possible, and the manufacturing process is simple based on the existing semiconductor process technology has attracted attention as a next-generation flat panel display device in the future. In addition, since the organic film used in the organic light emitting display device emits light by itself, the organic film may be used in an OLED lighting device by applying an electric field to the upper and lower ends of the organic film. OLED lighting is attracting great attention as the next generation lighting because conventional LED lighting is a surface light source, whereas an existing LED light is a surface light source.

The formation of the organic thin film in the organic light emitting display device and the OLED lighting manufacturing process can be largely divided into a high molecular type device using a wet process and a low molecular type device using a deposition process according to the materials and processes used. For example, in the inkjet printing method of forming a polymer or a low molecular weight light emitting layer, the materials of the organic layers other than the light emitting layer are limited, and there is a need to form a structure for inkjet printing on the substrate. In addition, when forming a light emitting layer by a deposition process, a separate metal mask can be used.

In such a conventional metal mask for an organic light emitting device, the surface thereof may be easily contaminated by organic material or foreign matter.

Conventionally, in order to recycle such a metal mask, a wet cleaning method has been used in which organic substances or foreign substances remaining on the surface are dissolved by using a cleaning solution such as various acidic solutions or alkaline solutions.

However, such a conventional wet cleaning method may not only cause environmental pollution through the discarded cleaning solution, but also the time required for the cleaning operation such as the surface of the metal mask is dissolved in the cleaning solution, shortening the life of the mask, and drying after cleaning. There are many problems, such as a significant increase in costs and a decrease in productivity.

The present invention is to solve a number of problems, including the above problems, by using the cleaning light to evaporate the organic matter or foreign matter instantaneously to reduce the cleaning time and cost, greatly improve the productivity, and minimize damage to the metal mask It is possible to extend the life of the mask, recover the organic matter evaporated by the cleaning light, economical, waste-free, environmentally friendly, and easy to apply to the existing mask recovery line to reduce the additional installation cost It is an object of the present invention to provide a mask cleaning system and a mask cleaning method. However, these problems are exemplary, and the scope of the present invention is not limited thereby.

In the cleaning apparatus for a mask according to the spirit of the present invention for solving the above problems, an accommodating space for accommodating a mask is formed therein, and a vacuum environment is formed therein to facilitate removal of organic matter remaining in the mask. A vacuum chamber; A first cleaning light irradiation device capable of irradiating cleaning light to the mask accommodated in the vacuum chamber to apply light energy to the organic material in the vacuum environment to decompose, separate and remove the organic material from the mask; And a controller configured to apply pulsed wave power to the first cleaning light irradiation device.

In addition, according to the present invention, the mask is a fine metal mask (FMM) for manufacturing an organic light emitting display device, and the first cleaning light irradiation device is provided with a first xenon lamp to remove the organic material remaining in the mask. The first pulse wave power having the first intensity or the first pulse application time may be applied from the controller to generate a first IPL (Intense Pulse Light).

In addition, according to the present invention, the first cleaning light irradiation apparatus, the second intensity stronger than the first intensity or the first pulse to the first xenon lamp to remove the organic matter remaining in the frame supporting the mask. The second pulse wave power having a second pulse application time longer than the application time may be applied from the controller to generate a second IPL (Intense Pulse Light).

In addition, the cleaning apparatus for a mask according to the present invention is relative to each other so that the mask or the first cleaning light irradiation apparatus can be irradiated with the cleaning light generated by the first cleaning light irradiation apparatus to partially irradiate or scan the mask. It may further include a mask moving device for moving to.

Further, in the mask cleaning apparatus according to the present invention, when irradiating the cleaning light to the frame supporting the mask, the mask and the apparatus may be partially irradiated or scanned by a first width by rotating the mask and the frame at a first angle. The vacuum chamber or the mask moving device may be configured to irradiate the mask with the cleaning light so that the mask and the frame supporting the mask are rotated at a second angle to partially irradiate or scan irradiated by a second width. It may further include a turntable device which is installed in, to turn the mask and the frame angular rotation.

In addition, according to the present invention, when irradiating the cleaning light to the frame having a generally rectangular ring shape, the turntable device rotates the mask and the frame by an angle of 90 degrees so that each of the four frame members is divided by their respective widths. Irradiation or scanning can be investigated.

In addition, the apparatus for cleaning a mask according to the present invention may include a second intensity stronger than a first intensity or a wider time than the first pulse application time in a second xenon lamp so as to remove organic matter remaining in a frame supporting the mask. And a second cleaning light irradiation device configured to generate a second IPL (Intense Pulse Light) by receiving a second pulse wave power source having a two pulse application time from the control unit.

In addition, the apparatus for cleaning a mask according to the present invention may further include a first band pass filter which may be installed in the optical path of the cleaning light and passes light of a first wavelength band having excellent resolution of the first organic material. have.

In addition, the cleaning apparatus of the mask according to the present invention may be installed in the optical path of the cleaning light, the second band pass filter for passing the light of the second wavelength band excellent in the resolution of the second organic material; may further include a have.

Further, the mask cleaning apparatus according to the present invention, the filter replacement to transfer the first band pass filter provided in the optical path to the standby position, and transfer the second band pass filter installed in the standby position to the optical path. The apparatus may further include.

In addition, according to the present invention, the first cleaning light irradiation apparatus is provided outside the vacuum chamber with a first reflector that reflects the cleaning light in the vacuum chamber direction, and the vacuum chamber forms a vacuum environment. A vacuum pump may be installed so that the vacuum pump may be installed, and a first transparent window may be formed on one side of the first cleaning light through which the cleaning light of the first cleaning light irradiation apparatus is introduced and irradiated onto the mask.

In addition, the cleaning apparatus of the mask according to the present invention, the organic material is installed inside the vacuum chamber or between the first transparent window and the mask so that the organic material can be trapped and recovered on the surface without contaminating the first transparent window. It may further include a recovery panel.

According to the present invention, the first cleaning light irradiation apparatus is provided inside the vacuum chamber together with a second reflector that reflects the cleaning light in the mask direction, and the second reflector is provided inside the vacuum chamber. A band pass filter or a second transparent window that transmits the cleaning light may be formed to protect the first cleaning light irradiation device.

On the other hand, the cleaning method of the mask according to the spirit of the present invention for solving the above problems, the first step of accommodating the mask in a vacuum chamber to facilitate the removal of organic matter remaining in the mask; And a second step of decomposing and separating and removing the organic material from the mask by irradiating the IPL (Intense Pulse Light) on the organic material in the vacuum environment.

In addition, according to the present invention, the second step is a second step of partially irradiating or scanning irradiating each of the four frame members by their respective widths by rotating the frame supporting the mask by an angle of 90 degrees using a turntable device. Stage 1; And a step 2-2 of moving the mask by using a mask moving device to perform partial irradiation or scanning irradiation of the mask step by step.

Further, according to the present invention, the IPL irradiated in step 2-1 and the IPL irradiated in step 2-2 may have different pulse intensity or pulse application time.

Further, according to the present invention, in the second step, the IPL may be irradiated by transporting at least one band pass filter in the optical path according to the type of the organic material.

According to some embodiments of the present invention made as described above, by using a dry cleaning light that instantaneously decomposes and removes organic matter or foreign matter, reducing the cleaning time and cost significantly improve productivity and minimize damage to the metal mask It is possible to extend the life of the mask, and to recover the organic matter evaporated by the cleaning light, it is economical, it is eco-friendly because no waste is generated, and it can be easily applied to the existing mask recovery line to reduce the additional installation cost. It has an effect. Of course, the scope of the present invention is not limited by these effects.

1 is a cross-sectional view conceptually illustrating an apparatus for cleaning a mask according to some embodiments of the present disclosure.

FIG. 2 is a graph showing an example of pulse waves applied to the first xenon lamp of the cleaning apparatus of the mask of FIG. 1.

3 is a graph showing another example of a pulse wave applied to the first xenon lamp of the cleaning device of the mask of FIG. 1.

4 to 7 are plan views illustrating a frame cleaning mode of the cleaning apparatus of the mask of FIG. 1.

8 to 10 are plan views illustrating a mask cleaning mode of the cleaning apparatus of the mask of FIG. 1.

11 is a cross-sectional view conceptually illustrating an apparatus for cleaning a mask according to some other embodiments of the present disclosure.

FIG. 12 is a graph showing an example of pulse waves applied to the first xenon lamp and the second xenon lamp of the cleaning apparatus of the mask of FIG. 12.

13 is a cross-sectional view conceptually illustrating an apparatus for cleaning a mask according to some other embodiments of the present disclosure.

14 is a cross-sectional view conceptually illustrating an apparatus for cleaning a mask according to some other embodiments of the present disclosure.

15 is a cross-sectional view conceptually illustrating an apparatus for cleaning a mask according to some other embodiments of the present disclosure.

16 is a flowchart illustrating a method of cleaning a mask according to some embodiments of the present invention.

17 is a flowchart illustrating an example of a frame irradiation process in detail in the mask cleaning method of FIG. 16.

Hereinafter, various exemplary embodiments of the present invention will be described in detail with reference to the accompanying drawings.

The embodiments of the present invention are provided to more fully explain the present invention to those skilled in the art, and the following examples can be modified in various other forms, and the scope of the present invention is It is not limited to an Example. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the invention to those skilled in the art. In addition, the thickness or size of each layer in the drawings is exaggerated for convenience and clarity of description.

1 is a cross-sectional view conceptually illustrating a cleaning apparatus 100 of a mask according to some embodiments of the present disclosure.

First, as shown in FIG. 1, the cleaning device 100 of a mask according to some embodiments of the present invention may include a vacuum chamber 10 and a first cleaning light irradiation device 20.

For example, as shown in FIG. 1, the vacuum chamber 10 has an accommodating space for accommodating the mask FMM therein, and removal of the organic material 1 remaining in the mask FMM is prevented. It may be a kind of box-type structure that can be sealed to facilitate the formation of a vacuum environment therein.

In such a vacuum chamber 10, a vacuum pump P may be installed so that a vacuum environment is formed therein. However, the vacuum chamber 10 is not necessarily limited to the drawings. For example, although not shown, various gates or doors may be formed to allow the mask FMM to enter and exit, and in addition, to perform a continuous process. Various types of process chambers, buffer chambers or load lock chambers may be connected.

Here, the mask FMM is a fine metal mask (FMM) for manufacturing an organic light emitting display device, and may be a metal mask made of Invar material used for depositing an organic material on a substrate for an organic light emitting device.

The mask FMM is the organic material 1 remaining on the surface after the deposition process, and may be a single mask having sufficient strength and durability without the need of the frame F, as shown in FIG. 1. When the mask FMM is a very thin sheet type, a square ring-shaped frame F may be installed to support the mask FMM so that the mask FMM maintains sufficient strength and durability. have. In FIG. 1, a mask FMM having the frame F is illustrated, but the mask FMM is not limited to the drawings, and all kinds of masks may be applied.

In addition, for example, the first cleaning light irradiation apparatus 20 applies light energy to the organic material 1 in the vacuum environment formed in the vacuum chamber 10 described above, so that the enlarged portion of FIG. As shown in the drawing, the organic material 1 is extracted from the mask FMM, for example, a first-first substance 1-1 such as oxygen, a hydrogen atom, a molecule or an ion, and a second 1-2 such as a carbon atom, a molecule or an ion. It may be a light irradiation device that can irradiate the cleaning light (L) to the mask (FMM) accommodated in the vacuum chamber 10 so as to be decomposed and separated by the material (1-2).

For example, the xenon flash light may have a bandwidth of 200 to 1100 nm, and among these, only a light of a desired region may be selectively used using a band pass filter or the like. In addition, for example, the power applied to the xenon lamp may be either a continuous power or a pulsed power.

Also, for example, the cleaning light L may be irradiated throughout the entire area of the mask FMM or may be irradiated in a scanning process while relatively moving the mask FMM in a line beam manner. It is possible.

More specifically, for example, the first cleaning light irradiation apparatus 20 includes the vacuum chamber 10 together with the first reflector R1 reflecting the cleaning light L toward the vacuum chamber 10. Can be installed outside of. When the first cleaning light irradiation device 20 is installed outside the vacuum chamber 10, the first cleaning light irradiation device 20 can be easily repaired, replaced, managed, or operated, and the various types The calorific value can be easily discharged to the outside.

To this end, the vacuum chamber 10, the cleaning light (L) of the first cleaning light irradiation apparatus 20 is introduced to the cleaning light (L) on one side so that the irradiation to the mask (FMM). A first transparent window 11 for transmitting may be formed.

The first transparent window 11 may be made of any light transmitting material such as quartz, glass or sapphire, which may pass the cleaning light L while maintaining the vacuum or airtight inside the vacuum chamber 10.

In addition, the first reflector R1 may minimize an optical loss by applying an IPL (Intense Pulse Light) reflector, that is, an advanced optical design and a skilled optical surface processing technology, and to the entire light energy irradiation region. Uniform energy density of more than 10 percent can be achieved, high energy density of up to 10 J / cm ² or more can be achieved, certification can be achieved, installation in tight spaces, material characteristics and It is also possible to optimize the process environment depending on the cleaning conditions.

In addition, as shown in FIG. 1, in the first cleaning light irradiation apparatus 20, a first xenon lamp LAMP1 may be applied to remove the organic material 1 remaining in the mask FMM. have. However, in addition to the xenon lamp, various lamps capable of generating light energy of various forms or wavelengths capable of decomposing the organic material 1 may all be applied.

FIG. 2 is a graph showing an example of a pulse wave applied to the first xenon lamp LAMP1 of the cleaning device 100 of the mask of FIG. 1.

As shown in FIG. 2, the cleaning apparatus 100 of the mask according to some embodiments of the present disclosure may include a controller 30 capable of applying pulsed wave power to the first cleaning light irradiation apparatus 20. It may further include.

Therefore, as shown in FIGS. 1 and 2, when the first cleaning light irradiation apparatus 20 is in the mask cleaning mode for removing the organic material 1 remaining in the mask FMM, the first xenon A first pulse wave power source having a first intensity V1 or a first pulse application time T1 may be applied to the lamp LAMP1 from the controller 30 to generate a first IPL L1.

In this case, the first IPL L1 may include light having a wavelength band optimized according to the type of the organic material 1, and may include, for example, light in an ultraviolet region. However, the present invention is not limited thereto, and may include light having a broad wavelength such as visible light or infrared light.

3 is a graph showing another example of a pulse wave applied to the first xenon lamp LAMP1 of the cleaning device 100 of the mask of FIG. 1.

As shown in FIG. 3, in the frame cleaning mode in which the frame F supporting the mask FMM is cleaned, a stronger level of the stronger cleaning light L than the mask FMM may be required.

In other words, the first cleaning light irradiation apparatus 20, as described above, in the mask cleaning mode for removing the organic material 1 remaining in the mask FMM, the first cleaning light irradiation device 20 in the first xenon lamp (LAMP1) A frame that receives the first pulse wave power source having the intensity V1 or the first pulse application time T1 from the controller 30 to generate the first IPL L1, and supports the mask FMM ( In the frame cleaning mode in which the organic material 1 remaining in F) is removed, the second intensity V2 or the first pulse application time (T1) stronger than the first intensity V1 is applied to the first xenon lamp LAMP1. A second pulse wave power source having a wider second pulse application time T2 than T1) may be applied from the controller 30 to generate a second IPL L2.

Here, in the case of the frame cleaning mode in which the frame F supporting the mask FMM is cleaned, it is economical to irradiate only the frame F with the strong cleaning light L described above. It may be desirable both in terms of preventing damage.

Further, in general, since the thickness of the frame F is much thicker than the thickness of the mask FMM, a much larger amount of energy is required to remove the organic material 1 remaining in the frame F. In contrast, Since the thickness of the mask FMM is so thin that excessive energy is applied, the mask FMM may be easily deformed, broken, or burned.

Thus, for example, first, the frame cleaning mode is performed, and then the mask cleaning mode is performed, thereby minimizing the influence of the organic materials 1 remaining in the frame F on the mask FMM.

However, the present invention is not limited to performing the frame cleaning first, and conversely, the mask FMM and the frame F may be used in a variety of ways, such as the mask FMM cleaning or the frame cleaning and the mask cleaning at the same time. This can be cleaned.

On the other hand, the technical idea of the present invention is not limited to the drawings, for example, a downward irradiation lamp as well as the downward irradiation lamp shown in the drawing is applied, or the mask (FMM) and the frame (F) of As the contaminated surface is shown, in addition to the upward bottom-up, it is possible to be applied in a wide variety of ways, such as the downward top-down.

Hereinafter, the above-described frame cleaning mode will be described in more detail.

4 to 7 are plan views illustrating a frame cleaning mode of the cleaning apparatus 100 of the mask of FIG. 1.

1 to 7, the mask cleaning apparatus 100 according to some embodiments of the present invention may include the mask FMM and the mask in the above-described mask cleaning mode or the above-described frame cleaning mode. The apparatus may further include a mask moving device 40 for moving the frame F and a turntable device 50 for rotating the mask FMM and the frame F in the above-described frame cleaning mode.

For example, as shown in FIG. 4, in the mask shifting device 40, the cleaning light L generated in the first cleaning light irradiation device 20 partially irradiates or scans the mask FMM. A device for moving the mask (FMM) or the first cleaning light irradiation device 20 relative to each other so that the object can be moved using a motor, a linear motor, a power transmission device, or a hydraulic / pneumatic cylinder. Various types of moving devices, such as various conveyor devices, belt devices, roller devices, transfer robots, transfer lines or transfer trucks, may all be applied.

For example, as shown in FIGS. 4 to 7, when the turntable device 50 irradiates the cleaning light L to the frame F that supports the mask FMM, the mask (FMM) and the frame (F) can be rotated at a first angle to perform partial irradiation or scanning irradiation by the first width (W1-1) (W1-2) (W1-3) (W1-4), When irradiating the cleaning light L to the mask FMM, the mask and the frame F supporting the mask may be rotated at a second angle so that partial irradiation or scanning irradiation may be performed by the second width W2. The apparatus may be installed in the vacuum chamber 10 or the mask moving device 40 and may rotate the mask FMM and the frame F.

The turntable device 50 may be applied to various types of rotating devices such as various susceptors, spinners, rotating robots, rotating tables, rotating plates, etc., which may rotate an object using a motor, a rotating power transmission device, or a hydraulic / pneumatic cylinder. have.

Thus, for example, in the case of the frame cleaning mode, in particular, when the cleaning light is irradiated to the frame (F) in the form of a rectangular ring as a whole, by using the mask moving device 40, for example, as shown in FIG. First, in the state where the mask FMM and the frame member F1 are 0 degrees, the first xenon lamp LAMP1 partially irradiates the first frame member F1 by the width W1-1. Or scanning can be done.

Subsequently, as illustrated in FIG. 5, the first xenon lamp LAMP1 is rotated by rotating the mask FMM and the frame F in a state of 90 degrees using the turntable device 50. As long as the frame member F2 includes the width W1-2, partial irradiation or scanning irradiation can be performed.

In this case, damage to the mask FMM may be minimized by preventing the mask FMM from being included in a region to which cleaning light is irradiated.

6, the first xenon lamp LAMP1 is rotated by rotating the mask FMM and the frame F in a state of 180 degrees using the turntable device 50. As long as the frame member F3 includes the width W1-3, partial irradiation or scanning irradiation can be performed.

Subsequently, as shown in FIG. 7, the first xenon lamp LAMP1 is rotated by rotating the mask FMM and the frame F at a state of 270 degrees using the turntable device 50. As long as the frame member F4 includes the width W1-4, partial irradiation or scanning irradiation can be performed.

That is, by using the mask moving device 40 and the turntable device 50, the mask FMM and the frame F are rotated by an angle of 90 degrees, respectively, so that four frame members F1, F2, and F3 are rotated. F4 may be partially irradiated or scanned by respective widths W1-1, W1-2, W1-3, and W1-4. In the process, even if the region of light irradiated to the frame members overlaps, the cleaning light is not irradiated to the mask FMM so that the heat deformation or local heating or pattern of the mask FMM due to excessive irradiation of the cleaning light. Damage can be minimized.

In this case, the first xenon lamp LAMP1 may be a fixed type in which the position is not moved. However, the present invention is not limited thereto, and the first xenon lamp LAMP1 may be movable or rotated.

8 to 10 are plan views illustrating a mask cleaning mode of the cleaning apparatus 100 of the mask of FIG. 1.

As described above, if sufficient cleaning is performed on each of the frame members F1, F2, F3, and F4, the mask cleaning mode may be performed as shown in FIGS. 8 to 10. .

Subsequently, as shown in FIG. 8, the mask FMM is first operated by using the mask moving device 40 while maintaining the mask FMM and the frame F at 270 degrees. In operation, the first xenon lamp LAMP1 may partially irradiate or scan a third portion of the mask FMM.

Subsequently, as shown in FIG. 9, the mask FMM is advanced by two stages using the mask moving device 40, and the first xenon lamp LAMP1 is two-thirds of the mask FMM. Can be partially irradiated or scanned irradiated.

Subsequently, as shown in FIG. 10, the mask FMM is advanced in three steps by using the mask moving device 40, and the first xenon lamp LAMP1 is a third part of the mask FMM. Can be partially irradiated or scanned irradiated. In the drawing, the first xenon lamp LAMP1 exemplarily cleans the mask FMM three times for convenience. Or it can be integrated or phased out over a number of times.

In this case, the first xenon lamp LAMP1 may not adversely affect the frame F even when the mask FMM is irradiated while invading the area of the frame F while irradiating the mask FMM. The reason is that unlike the mask (FMM) area where high pattern precision is required, the frame (F) area does not significantly affect the process even if the surface is minutely damaged, and the frame (F) has high strength and durability. It is because it is formed thick and strong so as not to be easily damaged.

Therefore, by using the cleaning light (L) that instantaneously decomposes and evaporates the organic material (1) or foreign matter, the productivity is greatly improved by reducing the cleaning time and cost, and the damage of the mask (FMM) is minimized to minimize the damage of the mask (FMM). ) Can be extended, and the organic matter evaporated by the cleaning light (L) can be recovered, economical, waste-free, eco-friendly, and can be easily applied to existing mask recovery lines, thereby reducing additional installation costs. can do.

On the other hand, as shown in Figure 1, the cleaning apparatus 100 of the mask according to some embodiments of the present invention, may be installed in the optical path of the cleaning light (L), the first organic material 1 The display device may further include a first band pass filter FT1 configured to pass light having a high resolution in a first wavelength band.

Accordingly, the mask cleaning apparatus 100 according to some embodiments of the present invention may suppress damage of the mask FMM by using the first band pass filter FT1 and at the same time reduce the resolution of the organic material 1. High wavelength bands of light can optionally be used.

For example, the first band pass filter FT1 selects and passes only the wavelength of the ultraviolet band having excellent resolution of the organic material 1 rather than the wavelength of the infrared band causing thermal deformation of the mask FMM. Can be applied. However, the present invention is not necessarily limited thereto, and a wide variety of wavelengths may be selectively utilized.

For example, when the organic material 1 is an organic material for red electroluminescence, the first band pass filter FT1 may pass light of, for example, an infrared band or a near infrared band, having excellent resolution with respect to the organic material for red electroluminescence. The cleaning efficiency can be improved. However, the present invention is not necessarily limited thereto, and a band pass filter through which various types of light pass may be applied in various forms.

11 is a cross-sectional view conceptually illustrating a cleaning apparatus 200 of a mask according to some other embodiments of the inventive concept.

As illustrated in FIG. 11, the mask cleaning apparatus 200 according to some other embodiments of the present invention may separately clean the mask FMM and the frame F, respectively. In addition to the irradiation device 20, the second cleaning light irradiation device 60 may be further included.

For example, the first cleaning light irradiation apparatus 20 may apply the first intensity V1 or the first pulse to the first xenon lamp LAMP1 to remove the organic material 1 remaining in the mask FMM. A first IPL L1 can be generated by applying a first pulse wave power source having a time T1, and the second cleaning light irradiation device 60 supports the mask FMM in a frame F Applying a second intensity (V2) stronger than the first intensity (V1) or a second pulse wider than the first pulse application time (T1) to the second xenon lamp (LAMP2) to remove the organic matter 1 remaining in the The second pulse wave power source having the time T2 may be applied to generate the second IPL L2.

12 is a graph showing an example of pulse waves applied to the first xenon lamp LAMP1 and the second xenon lamp LAMP2 of the cleaning device of the mask of FIG. 12, respectively.

Accordingly, as shown in FIGS. 11 and 12, the mask FMM and the frame F are simultaneously or sequentially used using the first xenon lamp LAMP1 and the second xenon lamp LAMP2, respectively. It can be cleaned by. In this case, as described above, the frame F may be cleaned while being rotated by an angle of 90 degrees.

13 is a cross-sectional view conceptually illustrating an apparatus 300 for cleaning a mask according to some other embodiments of the present invention.

As shown in FIG. 13, the mask cleaning apparatus 300 according to some other embodiments of the present invention may be installed in the optical path of the cleaning light L in addition to the first band pass filter FT1. And a second band pass filter FT2 through which light in a second wavelength band having excellent resolution of the second organic material 1 and the first band pass filter FT1 installed in the optical path are transferred to a standby position. And a filter exchange device 70 for transferring the second band pass filter FT2 installed at the standby position to the optical path.

Therefore, various kinds of the organic materials 1 and 2 are mixed to clean the mask remaining in the mask FMM or one type of organic material remaining, followed by cleaning another mask in which other types of organic materials remain. In this case, while replacing the band pass filters in various combinations using the filter exchange device 70, damage to the mask may be minimized, and the decomposition performance of the organic materials may be maximized.

In FIG. 13, the filter exchange device 70 of the sliding slot type that can be replaced while sliding the two band pass filters is illustrated, but in addition, a rotary filter exchange device that replaces a plurality of band pass filters in a rotational manner, or the like. A wide variety of filter changing devices, such as a cartridge method, can all be applied.

14 is a cross-sectional view conceptually illustrating a cleaning apparatus 400 of a mask according to some other embodiments of the present disclosure.

As shown in FIG. 14, the mask cleaning apparatus 400 according to some other embodiments of the present invention is such that the organic material 1 is trapped on the surface without contaminating the first transparent window 11. The organic material recovery panel 12 may be further included in the vacuum chamber 10 or between the first transparent window 11 and the mask FMM to be recovered.

Therefore, the expensive organic materials 1 accumulated on the surface of the organic material recovery panel 12 may be recovered and protected while protecting the first transparent window 11. Here, a cooling device may be installed in the organic material recovery panel 12 so that the organic materials 1 may be cold trapped while being aggregated on a cold surface. In addition, various types of trap devices may be applied.

15 is a cross-sectional view conceptually illustrating a cleaning apparatus 500 of a mask according to some other embodiments of the inventive concept.

As shown in FIG. 15, the first cleaning light irradiation apparatus 20 of the cleaning apparatus 500 of the mask according to some other embodiments of the present invention may use the mask FMM or the mask FMM. The length of the lamp LAMP1 is at least the width of the mask FMM so that the cleaning light can be cleaned in the supporting frame F so that all areas of the mask FMM or all areas of the frame F can be simultaneously cleaned. W3) or longer than the width W4 of the frame F, and the lamp LAMP1 is disposed in parallel with each other in the width direction of the mask FMM or the frame F. The number of installations of the lamp LAMP1 may include a length L3 of the mask FMM or the frame (B) so that the cleaning lights may simultaneously reach all areas of the mask FMM or the frame F. The total length L4 of F) divided by the minimum width W2 of the lamp irradiation area. It may be greater than or equal to the number of installations.

For example, when the length of the width (W4) of the frame (F) is 10000 mm, the length of the lamp (LAMP1) may be at least 10000 mm or more, in the width direction of the mask (FMM) or the frame (F) The minimum number of installations of the lamp LAMP1 arranged in parallel with each other is the total length L4 of the frame F so that the cleaning light can reach all the regions of the mask FMM or the frame F. FIG. Is 8000 mm and the minimum width W2 of the lamp irradiation area is 2000, it may be four or more divided by 8000 by 2000.

Accordingly, by adjusting the width and the number of installation of the lamps installed in parallel with each other, the cleaning light is simultaneously irradiated to all regions of the mask FMM or all regions of the frame F supporting the mask FMM. All areas can be cleaned at the same time.

Therefore, for example, it is possible to prevent a phenomenon in which a part of the organic substance 1 decomposed during partial irradiation or scanning irradiation at the rear side adversely affects the previously cleaned portion, thereby improving the cleaning performance, and all areas. At the same time, the cleaning time can be greatly shortened and the cleaning efficiency can be maximized.

However, this simultaneous cleaning technique is not limited to the drawings, for example, four frame lamps are arranged in a square shape, and a plurality of mask lamps are arranged in parallel, or a plurality of short bar lamps are arranged vertically. Using a lamp module in the form of a display composed of pixels which are installed upright or separately controlled to have a high resolution, it is possible to sufficiently irradiate appropriate cleaning light onto a mask or a frame, respectively.

As shown in FIGS. 1 to 16, the mask cleaning method according to some embodiments of the present invention may include the mask in the vacuum chamber 10 to facilitate removal of the organic material 1 remaining in the mask FMM. First step (S1) for accommodating the (FMM) and the organic material 1 in the vacuum environment by irradiating the IPL (Intense Pulse Light) to decompose, separate and remove the organic material (1) from the mask (FMM) It may include a second step (S2).

Here, the second step (S2), by using the turntable device 50 to rotate the frame (F) for supporting the mask (FMM) by 90 degrees by four frame members (F1) (F2) (F3) The mask FMM is moved by using the mask moving device 40 and the step 2-1 (S2-1) of partially irradiating or scanning irradiating each of F4 by each width. It may include a step 2-2 (S2-2) of stepped partial irradiation or scanning irradiation step by step.

Here, the IPL irradiated in step 2-1 (S2-1) and the IPL irradiated in step 2-2 (S2-2) may have different pulse intensity or pulse application time.

In addition, in the second step S2, the IPL may be irradiated by transferring at least one band pass filter FT1 or FT2 in the optical path according to the type of the organic material 1.

FIG. 17 is a flowchart illustrating an example of step 2-1 (S2-1) in more detail in the mask cleaning method of FIG. 16.

1 to 17, the first xenon lamp LAMP1 using the mask moving device 40 is, for example, first in a state where the mask FMM and the frame member F1 are 0 degrees. ) May irradiate the first frame member F1.

Subsequently, by using the turntable device 50, the mask FMM and the frame F are rotated in a state of 90 degrees so that the first xenon lamp LAMP1 irradiates the second frame member F2. Can be.

Subsequently, by using the turntable device 50, the mask FMM and the frame F are rotated in a state of 180 degrees so that the first xenon lamp LAMP1 may irradiate the third frame member F3. Can be.

Subsequently, by using the turntable device 50, the mask FMM and the frame F are rotated in a state of 270 degrees so that the first xenon lamp LAMP1 irradiates the fourth frame member F4. Can be.

Therefore, by using the mask cleaning method of the present invention, even if the size of the mask FMM is enlarged, it is possible to uniformly clean all the areas of the mask F as well as the mask FMM step by step.

Although the present invention has been described with reference to the embodiments shown in the drawings, this is merely exemplary, and those skilled in the art will understand that various modifications and equivalent other embodiments are possible. Therefore, the true technical protection scope of the present invention will be defined by the technical spirit of the appended claims.

According to some embodiments of the present invention made as described above, by using a dry cleaning light that instantaneously decomposes and removes organic matter or foreign matter, reducing the cleaning time and cost significantly improve productivity and minimize damage to the metal mask It is possible to increase the life of the mask, and to recover the organic matter evaporated by the cleaning light, it is economical, it is eco-friendly because no waste is generated, and it can be easily applied to the existing mask recovery line to reduce the additional installation cost. .

Claims

A vacuum chamber in which an accommodating space for accommodating a mask is formed and a vacuum environment is formed therein to facilitate removal of organic matter remaining in the mask;

A first cleaning light irradiation device capable of irradiating cleaning light to the mask accommodated in the vacuum chamber to apply light energy to the organic material in the vacuum environment to decompose, separate and remove the organic material from the mask; And

A control unit capable of applying pulsed wave power to the first cleaning light irradiation apparatus;

Including, the cleaning apparatus of the mask.
The method of claim 1,

The mask is a fine metal mask (FMM) for manufacturing an organic light emitting display device,

The first cleaning light irradiation apparatus is configured to receive a first pulse wave power source having a first intensity or a first pulse application time to a first xenon lamp from the controller so as to remove the organic substance remaining in the mask. An apparatus for cleaning a mask, which generates an IPL (Intense Pulse Light).
The method of claim 2,

The first cleaning light irradiation apparatus includes a second intensity stronger than the first intensity or a second pulse wider than the first pulse application time to the first xenon lamp so as to remove organic matter remaining in the frame supporting the mask. And a second pulse wave power source having an application time applied from the control unit to generate a second IPL (Intense Pulse Light).
The method of claim 3, wherein

A mask shifting device for moving the mask or the first cleaning light irradiation device relative to each other so that the cleaning light generated in the first cleaning light irradiation device can partially irradiate or scan the mask;

Further comprising a cleaning device for the mask.
The method of claim 4, wherein

When the cleaning light is irradiated to the frame supporting the mask, the mask and the frame may be rotated at a first angle to partially irradiate or scan irradiated by a first width, and to irradiate the mask to the clean light. In this case, the mask and the frame supporting the mask is installed in the vacuum chamber or the mask moving device so that the partial irradiation or scanning irradiation by a second width by rotating the mask and the frame at a second angle, the rotation of the mask and the frame angular Turntable device;

Further comprising a mask cleaning apparatus.
The method of claim 5, wherein

When the cleaning light is irradiated to the frame having a generally rectangular ring shape, the turntable device rotates the mask and the frame by 90 degrees to partially irradiate or scan each of the four frame members by their respective widths. Cleaning device.
The method of claim 2,

A second pulse wave power source having a second intensity stronger than the first intensity or a second pulse application time wider than the first pulse application time is applied to the second xenon lamp to remove the organic substances remaining in the frame supporting the mask. A second cleaning light irradiation device applied by the controller to generate a second IPL (Intense Pulse Light);

Further comprising a mask cleaning apparatus.
The method of claim 1,

And a first band pass filter installed in an optical path of the cleaning light and allowing light of a first wavelength band having excellent resolution of a first organic material to pass therethrough.
The method of claim 8,

And a second band pass filter which is provided in the optical path of the cleaning light and allows light of the second wavelength band to have excellent resolution of the second organic material.
The method of claim 9,

And a filter exchange device for transferring the first band pass filter installed in the optical path to the standby position, and transferring the second band pass filter installed in the standby position to the optical path.
The method of claim 1,

The first cleaning light irradiation device is provided outside the vacuum chamber together with a first reflector that reflects the cleaning light in the vacuum chamber direction.

In the vacuum chamber, a vacuum pump is installed to form a vacuum environment, and the first transparent light transmits the cleaning light to one side so that the cleaning light of the first cleaning light irradiation apparatus is introduced and irradiated to the mask. The apparatus for cleaning a mask, wherein a window is formed.
The method of claim 11,

An organic material recovery panel installed in the vacuum chamber or between the first transparent window and the mask so that the organic material can be trapped and recovered on a surface without contaminating the first transparent window;

Further comprising a cleaning device for the mask.
The method of claim 1,

The first cleaning light irradiation apparatus may be configured to irradiate the mask or the frame supporting the mask with the cleaning light so that all regions of the mask or all regions of the frame supporting the mask may be cleaned at the same time. It is formed at least longer than the length of the width of the mask or the frame, a plurality of lamps are arranged in parallel with each other in the width direction of the mask or the frame, the number of installation of the lamp, the mask or the frame And the total length of the mask or the frame divided by the minimum width of the lamp irradiation area so that the cleaning lights can reach all areas of the mask cleaning apparatus.
Receiving the mask in a vacuum chamber to facilitate removal of organic matter remaining in the mask; And

Irradiating the organic material with IPL (Intense Pulse Light) in the vacuum environment to decompose, separate, and remove the organic material from the mask;

Including, the cleaning method of the mask.
The method of claim 14,

The second step,

Step 2-1 of using a turntable device to rotate the frame supporting the mask by an angle of 90 degrees to partially irradiate or scan each of the four frame members by their respective widths; And

A step 2-2 of moving the mask using a mask moving device to partially irradiate or scan the mask step by step;

Including, the cleaning method of the mask.
The method of claim 15,

The IPL irradiated in step 2-1 and the IPL irradiated in step 2-2 have different pulse intensities or pulse application times.
The method of claim 15,

In the second step, the IPL is irradiated by transporting at least one bandpass filter in the optical path in accordance with the type of the organic material, the cleaning method of the mask.