KR100463212B1 - Apparatus for dry surface-cleaning of materials - Google Patents

Apparatus for dry surface-cleaning of materials Download PDF

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KR100463212B1
KR100463212B1 KR20010027463A KR20010027463A KR100463212B1 KR 100463212 B1 KR100463212 B1 KR 100463212B1 KR 20010027463 A KR20010027463 A KR 20010027463A KR 20010027463 A KR20010027463 A KR 20010027463A KR 100463212 B1 KR100463212 B1 KR 100463212B1
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laser beam
cleaning
shock wave
surface
short wavelength
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KR20010027463A
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KR20020088662A (en
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이종명
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주식회사 아이엠티
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Priority claimed from JP2002067044A external-priority patent/JP3776820B2/en
Priority claimed from US10/094,610 external-priority patent/US6635845B2/en
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Abstract

PURPOSE: A method and an apparatus for dry cleaning are provided to effectively remove surface contaminants by using a plasma shock wave and a short wavelength laser beam. CONSTITUTION: A laser beam generator(1) is generated a plasma shock wave(5) and irradiated the plasma shock wave(5) to a surface of a workpiece(6). A short wavelength laser beam generator(21) is generated a short wavelength laser beam(22) and irradiated the short wavelength laser beam(22) into the surface of the workpiece(6). By using the plasma shock wave(5) and the short wavelength laser beam(22), surface contaminants(7) formed on the workpiece(6) are effectively removed.

Description

건식 표면 클리닝 장치{APPARATUS FOR DRY SURFACE-CLEANING OF MATERIALS} Dry surface cleaning device {APPARATUS FOR DRY SURFACE-CLEANING OF MATERIALS}

본 발명은 건식 표면 클리닝 장치에 관한 것으로, 레이저 유기 충격파와 단파장 레이저빔을 이용하여 작업물 표면의 다양한 오염물질을 효과적으로 제거하기 위한 클리닝 장치에 관한 것이다. The present invention relates to a cleaning apparatus for removing various contaminants from a workpiece surface by using a laser with a short wavelength laser beam organic shock wave relates to a dry surface cleaning device effectively.

기존의 반도체 표면 클리닝 방법으로 화학적 용매(chemical solvents)를 이용한 습식 방법(wet cleaning)이 사용된다. The wet process (wet cleaning) using a chemical solvent (chemical solvents) to conventional semiconductor surface cleaning process is used. 보통 사용되는 용매들로는 황산(H 2 SO 4 ), 염산(HCl), 암모니아(NH 4 OH), 과산화 수소(H 2 O 2 ), 불화수소(HF) 등이 물과 혼합되어 사용되며, 이런 용매들과 함께 초음파(ultrasonic 또는 megasonic) 발생 장치를 함께 한 클리닝 방법이 이용되고 있다. Usually the solvent to be used include sulfuric acid (H 2 SO 4), hydrochloric acid (HCl), ammonia (NH 4 OH), hydrogen peroxide (H 2 O 2), is used such as hydrogen fluoride (HF) is mixed with water, this solvent it is a cleaning method for ultrasound (ultrasonic or megasonic) generator together with being used. 이러한 습식 클리닝 방법은 상당량의 화학약품 사용에 따른 환경 오염문제, 느린 작업속도, 거대한 세정장비의 필요, 복잡하고 열악한 작업환경 등의 문제가 제기되어, 이의 대체를 위한 건식 클리닝(dry cleaning) 방법에 대한 연구가 활발히 진행되고 있다. This wet cleaning methods on environmental problems, slow working speed, dry cleaning (dry cleaning) method for the raised issues such as the need for huge cleaning equipment, complicated and poor working conditions, alternative appeal of using large amounts of chemicals for being actively conducted research. 현재까지 제시된 건식 클리닝 방법에는 레이저(laser) 또는 램프를 이용해 자외선(ultraviolet)빔을 표면에 직접 조사시켜 유기 오염물질을 제거하는 자외선 클리닝(ultraviolet radiation cleaning: laser cleaning 또는 excimer lamp cleaning), 진공에서 플라즈마(plasma)를 발생시켜 라디칼(radical)을 이용해 오염물질과 반응시켜 제거하는 플라즈마 클리닝(plasma cleaning), 이산화탄소(CO 2 ) 스노우(snow)를 만들어강하게 분사시켜 표면을 클리닝하는 이산화탄소 스노우 클리닝(CO 2 snow cleaning) 등이 있다. Dry cleaning methods presented so far, the laser (laser) or UV cleaning of the UV (ultraviolet) beam with a lamp to investigate directly to the surface to remove the organic contaminants (ultraviolet radiation cleaning: laser cleaning or excimer lamp cleaning), the plasma in the vacuum plasma cleaning (plasma cleaning), carbon dioxide (CO 2) by spraying strongly make snow (snow) cleaning the carbon dioxide snow to clean the surface to remove reacted with a pollutant by using the radical (radical) by generating (plasma) (CO 2 It includes snow cleaning).

그러나 이러한 종래의 건식 클리닝 방법 중, 레이저 클리닝 방법은 작은 레이저 스폿 크기로 인한 느린 작업속도, 표면 위의 미세 무기 오염입자들의 제거가 어렵고, 플라즈마 클리닝 방법은 부가적인 진공장비가 필요하며 진공상에서 이루어지기 때문에 큰 대상물의 클리닝이 어렵다는 문제점이 있으며, 이산화탄소 스노우 클리닝 방법은 스노우 입자들의 충돌에 따른 모재의 기계적인 손상 가능성이 높고 공정제어가 어렵다는 단점이 있다. However, these of conventional dry-cleaning method, the laser cleaning method it is difficult to remove from fine inorganic contaminant particles above the slow working speed, the surface due to a small laser spot size, the plasma cleaning method and the need for additional vacuum equipment being carried on a vacuum since the cleaning is difficult, and a large object, the carbon dioxide snow cleaning method has a high likelihood of mechanical damage to the base material of the impact of the snow particles have a difficult process control disadvantages. 이와 같은 건식 클리닝의 문제점들을 해결하기 위한 새로운 방법으로 "건식 표면 클리닝 방법"이 본 발명자에 의해 출원되었다(특허출원번호: 2000-73391 ; 2000년 12월 5일). Such a new method for solving the problems of the dry-cleaning "surface dry cleaning method" was filed by the present inventors (Patent Application No. 2000-73391; December 05, 2000).

상기 출원된 내용에 따르면, 레이저로부터 조사된 레이저빔을 포커스 렌즈를 통해 대기 중에 또는 희생층 표면에 또는 모재 뒷면에 조사시켜 강력한 플라즈마를 발생시키고, 이때 발생하여 사방으로 전파되는 플라즈마 충격파를 이용하여 모재 표면의 오염물질을 제거하는 것으로, 클리닝 속도 및 효율이 향상되고, 시스템의 가격을 낮출 수 있으며, 모재의 손상을 방지할 수 있고, 부가적인 진공장비가 필요 없으며, 모재의 크기에 제약을 받지 않게 되는 등의 효과를 얻을 수 있다. According to the application information, by irradiating the back of the laser beam on or sacrificial layer surface to the atmosphere through the focus lens or the base material irradiated from the laser to generate a strong plasma, this time resulting from the base material using a plasma shock wave propagating in all directions by removing contaminants on the surface, the cleaning rate and efficiency is improved, and lower the price of the system, it is possible to prevent damage to the base material eliminates the need for an additional vacuum equipment, so that it no longer receives a constraint on the size of the base material effects can be obtained such that.

그러나 상기 충격파를 이용한 건식 표면 클리닝 방법은 표면 위 건식 입자들(dry particles)의 제거에는 우수한 성능을 발휘할 수 있으나, 작업물 표면의 유기 오염층(organic contaminanted layer) 제거에는 비효과적인 단점이 있다. However, dry surface cleaning method using the shock wave has the disadvantage to non-effective removal of organic contamination layer (organic layer contaminanted) of the workpiece surface, removed, but can exhibit the excellent performance of the surface above the dry particles (dry particles).

본 발명은 이와 같은 종래의 단점을 해소하기 위한 것으로, 레이저 유기 충격파와 단파장 레이저빔을 병행 사용하여 표면 위 건식 입자들과 유기오염물질 모두를 효과적으로 제거할 수 있는 건식 표면 클리닝 장치를 제공하는데 그 목적이 있다. The present invention provides such a conventional dry surface cleaning device, which as to resolve the drawbacks, by using in parallel the laser organic shock wave with a short wavelength laser beam to remove all of the surface above the dry particle and organic contaminants effectively that purpose there is.

이와 같은 목적을 실시하기 위한 본 발명은 레이저로부터 조사된 짧은 펄스파(100 nanosecond 이하)의 고에너지 레이저빔(0.1 ∼ 10 J/pulse)을 초점 렌즈를 통해 대기 중에 집속시켜 레이저 초점에서 사방으로 전파되는 플라즈마 충격파를 발생시키고, 이때 발생되는 플라즈마 충격파를 작업물 표면에 충돌시켜 작업물 표면의 건식 오염물질을 제거하는 표면 클리닝 장치와 유기오염물질의 제거에 효과적인 단파장의 레이저빔을 발생시키는 장치를 함께 사용하는 것을 특징으로 한다. The present invention for carrying out the same purpose is to focus the atmosphere the high energy laser beam (0.1 ~ 10 J / pulse) of the short pulse wave (less than 100 nanosecond) emitted from the laser via the focusing lens propagate in all directions in the laser focus generates a plasma shock wave which, at this time generates a surface cleaning device with a device for generating a laser beam of an effective short wavelengths in the removal of organic pollutants by collision of plasma shock wave to the work surface removing dry contaminants from the workpiece surface with which It characterized by using.

도 1은 본 발명에 따른 건식 표면 클리닝 장치의 제1실시예를 도시한 개략도. 1 is a schematic diagram showing a first embodiment of a dry surface cleaning apparatus according to the present invention.

도 2는 본 발명에 따른 건식 표면 클리닝 장치의 제2실시예를 도시한 개략도. Figure 2 is a schematic diagram showing a second embodiment of a dry surface cleaning apparatus according to the present invention.

<도면의 주요부분에 대한 부호의 설명> <Description of the Related Art>

1: 충격파 레이저빔 발생장치 2: 레이저빔(laser beam) 1: shock wave laser beam-generating apparatus 2: a laser beam (laser beam)

3: 초점렌즈(focussing lens) 4: 레이저 초점(laser focus) 3: Focus lens (focussing lens) 4: Laser Focus (laser focus)

5: 플라즈마 충격파(plasma shock wave) 6: 작업물(workpiece) 5: the plasma shock wave (plasma shock wave) 6: workpiece (workpiece)

7: 표면 오염물(surface contaminants) 9: 작업대(working table) 7: surface contamination (surface contaminants) 9: work surface (working table)

11: 진공펌프(vacuum pump) 12: 가스튜브 11: a vacuum pump (vacuum pump) 12: gas tube

21: 단파장 레이저빔 발생장치 21: short wavelength laser-beam generating apparatus

22: 단파장 레이저빔(short wavelength laser beam) 22: short-wavelength laser beam (short wavelength laser beam)

26: 스위칭미러(switching mirror) 26: switching mirror (switching mirror)

27: 주파수하모닉 발생장치(frequency harmonic generator) 27: harmonic frequency generator (frequency harmonic generator)

28: 반사미러(reflecting mirror) 28: reflecting mirror (reflecting mirror)

이와 같은 본 발명의 특징적인 구성 및 이에 따른 작용효과는 첨부된 도면을 참조한 실시예의 상세한 설명을 통해 더욱 명확해질 것이다. Such characteristic configuration and thus the advantageous effects according to the present invention will become more apparent from the detailed example described with reference to the accompanying drawings embodiments.

기본적으로 모든 클리닝 공정에 있어서 레이저를 이용한 충격파의 발생은 본 발명자에 의해 출원된, 특허출원번호: 2000-73391호, "건식 표면 클리닝 방법"에 잘 설명되어 있으며, 이를 기본 전제로 한다. By default, the generation of the shock wave using the laser in all the cleaning process, the Patent Application No. filed by the present inventors: are well described in the No. 2000-73391, "dry surface cleaning method", and this as basic premise.

도 1은 본 발명에 따른 건식 표면 클리닝 장치의 제 1 실시예를 도시한 개략도이다. 1 is a schematic view showing a first embodiment of a dry surface cleaning apparatus according to the present invention.

도 1에 도시된 바와 같이, 본 발명에 따른 건식 표면 클리닝 장치는 레이저유기 충격파를 발생시키는 충격파 레이저빔 발생장치(1)와, 단파장의 레이저빔을 발생시켜 표면에 직접 조사하는 단파장 레이저빔 발생장치(21)로 이루어진다. 1, a dry surface cleaning device according to the invention the shock wave laser beam generator generating a laser organic shock wave device (1), by generating a laser beam of a short wavelength shorter wavelength laser beam generating device for irradiating directly on the surface composed of 21.

통상적으로 작업물(6)은 가스튜브(12)가 개재된 진공펌프(11)를 이용해 작업대(9) 위에 밀착 고정된다. Typically the workpiece 6 is fixed in close contact on the work table (9) with a vacuum pump 11 through the gas tube 12.

이와 같이, 제 1 실시예에 따른 건식 표면 클리닝 장치는 충격파 레이저빔 발생장치(1)로부터 조사된 레이저빔(2)을 초점 렌즈(3)를 통해 작업물 위 대기 중에 집속시켜 레이저 초점(4)에서 플라즈마 충격파(plasma shock wave)(5)를 발생하며 사방으로 전파된다. Thus, the dry surface cleaning apparatus according to the first embodiment by focusing the workpiece above the atmosphere through the laser beam 2, a focus lens 3 is irradiated from the shock wave laser beam-generating apparatus (1) Laser Focus 4 generating plasma shock waves (plasma shock wave) (5) in and propagates in all directions. 전파되는 충격파는 작업물 표면과 부딪치게 되며, 이때 충격파의 힘이 작업물에 부착된 오염입자와 모재와의 접촉강도보다 크면 표면오염물(7)들은 작업물의 표면으로부터 떨어져 제거되게 된다(참조: 특허출원번호: 2000-73391 ; 2000년 12월 5일). Shock waves are propagated is hit and the workpiece surface, wherein the force of the shock waves is greater than the contact strength between the contaminated particles and a base material attached to the workpiece surface contaminants (7) are to be removed away from the surface of the workpiece (see Patent Application No: 2000-73391; December 05, 2000).

이와같이 충격파에 의한 클리닝 방법은 표면 위 건식 미세 입자들의 제거에 우수한 성능을 가지고 있다. Thus there cleaning method according to the shock wave has a superior performance in the removal of the upper surface of the dry fine particles. 이런 충격파의 이용과 함께 단파장 레이저빔 발생장치(21)를 이용한 단파장(보통 400 nm 이하의 자외선영역의 파장을 사용) 레이저빔(22)을 표면에 직접 조사함으로써 아주 효과적인 클리닝을 수행할 수 있다. With the use of this shock wave a short wavelength with a short wavelength laser beam generating device 21 (normally using the wavelength of the ultraviolet region of less than 400 nm) can perform a very effective cleaning by irradiating a laser beam 22 directly to the surface. 즉 표면에 조사된 단파장 레이저빔(22)은 작업물 표면의 유기오염물질(organic contaminants)의 제거에 우수한 특성을 나타낸다. I.e., a short wavelength laser beam irradiated on the surface 22 exhibits excellent properties for the removal of organic pollutants in the work piece surface (organic contaminants). 결과적으로 도 1과 같이 입자제거능력이 뛰어난 충격파를 이용하는 클리닝 방법과 유기 레이어(organic layer) 제거능력이 뛰어난 단파장 레이저를 이용하는 클리닝 방법의 병행사용은 반도체 웨이퍼와 같이 초청정도를 요구하는 표면 클리닝 공정으로 사용되어질 수 있다. As a result, even combined use of the cleaning method using the cleaning method and the laser organic layer excellent (organic layer) removal capability shorter wavelength using a shock wave the particle removal capability superior, as 1 is a surface cleaning process that requires an invite degree such as a semiconductor wafer It can be used. 또한오염물질의 종류에 따라 각각의 다른 세정액을 사용하는 기존의 복잡한 습식 클리닝 공정과 달리, 도 1실시예는 클리닝 공정을 단순화, 일원화 및 범용화시킨 건식세정공정이라는 특징을 가지고 있다. In addition, unlike the conventional complex wet cleaning process using a cleaning liquid each other, Fig. 1 embodiment in accordance with the type of pollutants example has the characteristic of being a dry cleaning process that simplifies the cleaning process, a unified and generalized.

또한 클리닝 면적 효율을 증가시키기 위해 단파장 레이저빔(22)을 조사시, 표면과 수직방향 뿐이 아닌 경사진 각도를 가지고 조사할 수도 있다. Also it may be irradiated with an inclined angle of the short wavelength laser beam (22), not only the surface and the vertical direction during irradiation in order to increase the efficiency of the cleaning area. 이때 조사각도는 작업물의 수직면에 대해 45 o ∼ 85 o 의 범위로 설정하면 높은 클리닝 면적효율과 레이저빔의 직접조사에 의한 작업물 표면의 손상가능성을 줄일 수 있다는 장점이 있다. At this time, there is an advantage that when the irradiation angle is set to be in the range of 45 o ~ 85 o to the vertical surface of the workpiece to reduce the likelihood of damage to the workpiece surface by the direct irradiation of high cleaning efficiency, the area of the laser beam.

클리닝을 수행하는 시간을 단축하기 위해 작업대(9)의 중심축을 기준으로 작업물(6)을 회전시킬 수 있다. It is possible to rotate the workpiece (6) with the center axis of the work table (9) in order to shorten the time to perform the cleaning. 이는 전면적 클리닝을 위해 일반적으로 수행하는 두방향 직선 스캔닝 방법과 비교해 시간적, 공간적으로 보다 효율적인 클리닝을 수행할 수 있다는 장점이 있다. This has the benefit of being able to perform more effective cleaning compared to the two directions of linear scanning method temporally, spatially, which generally carried out for a full cleaning.

도 2는 본 발명에 따른 건식 표면 클리닝 장치의 제 2실시예를 도시한 개략도이다. Figure 2 is a schematic diagram showing a second embodiment of a dry surface cleaning apparatus according to the present invention. 도 1에서 레이저 유기 플라즈마 충격파(보통 1064 nm의 근적외선 파장을 가진 Nd:YAG 레이저 사용)를 이용한 클리닝 장치와 단파장(파장이 100 nm ∼ 600 nm 범위) 레이저의 직접조사에 의한 클리닝 장치의 병행사용의 장점들이 설명되었다. In Figure 1 the laser organic plasma shock waves: the use of a cleaning device with a short wavelength by using (typically Nd with near-IR wavelength of 1064 nm YAG laser used) (a wavelength of 100 nm ~ 600 nm range) parallelism of the cleaning device by direct irradiation with a laser Benefits have been described. 도 2는 도 1에서 설명된바와 같이 하나의 충격파 레이저빔 발생장치(1)에서 발생시킨 레이저빔(2)을 그대로 이용하여 플라즈마 충격파를 발생하여 클리닝을 행하거나, 상기 레이저빔(2)을 파장변조하여 작업물 표면에 직접조사하여 클리닝을 행하는 실시예를 나타낸 것이다. Figure 2 is a wavelength of a single shock wave laser beam-generating apparatus 1 in which the laser beam (2) as used in the plasma shock wave generated by performing the cleaning, or the laser beam (2) generated in the steps described in Figure 1 modulated illustrates an embodiment for performing the cleaning is irradiated directly on the workpiece surface. 예를 들어 충격파를 이용한 클리닝을 위해 Nd:YAG 레이저 기본파장(1064 nm)의 레이저빔(2)을 스위칭미러(switching mirror)(26)와 반사미러(reflecting mirror)(28)를 통해 작업물(6) 표면 위로 전송시키며, 이때 레이저 초점(4)에서 발생하는 플리즈마 충격파를 이용하여 작업물(6) 표면의 입자제거 클리닝을 수행한다. For example, for cleaning by a shock wave Nd: YAG laser fundamental wavelength switching a laser beam (2) (1064 nm), a mirror (switching mirror) (26) and working over a reflecting mirror (reflecting mirror) (28) Water ( 6) sikimyeo transmission over the surface, this time using a shock wave generated from the laser focus peulrijeu town (4) performs a workpiece (6) to remove particles of the cleaning surface. 이후 작업물(6) 표면의 잔류하는 유기 입자 및 레이어(layer)의 정밀 제거를 위해, 스위칭미러(26)를 OFF상태로 하여 레이저에서 발생하는 기본파장 레이저빔을 주파수 하모닉 발생장치(frequency harmonic generator)(27)로 통과시킨다. Since for the precise removal of the workpiece (6) organic particles and a layer (layer) that remains on the surface, the fundamental wavelength laser beam of frequency harmonic generation device, a switching mirror 26 is in the OFF state occurring in the laser (frequency harmonic generator ) it is passed through a 27. 이때 입사된 Nd:YAG 레이저 기본 파장(1064 nm)은 주파수 하모닉 발생장치(27)를 통과하면서 반파장(532 nm), 1/3파장(355 nm), 혹은 1/4파장(266 nm)로 변조가 이루어지며, 이렇게 짧아진 단파장 레이저빔(short wavelength laser)을 초점렌즈(3)을 통해 작업물 표면에 직접조사함으로써 잔류하는 유기물질을 효과적으로 제거할 수 있게 된다. A YAG laser fundamental wavelength (1064 nm), while passing the harmonic frequency generating device (27) half-wave (532 nm), 1/3 wavelength (355 nm), or a quarter-wave (266 nm): The incidence of Nd the modulation is done, it is possible to remove the thus shortened short wavelength laser beam (short wavelength laser), an organic material remaining by direct irradiation on the workpiece surface through the lens (3) efficiently. 또한 상기 예에서 제시한 방법의 순서를 바꾸어 1차로 단파장 레이저빔에 의한 유기물질 제거를 수행후 플라즈마 충격파에 의한 입자제거의 클리닝을 수행할 수도 있다. May also be performed after performing the cleaning of the removal of organic materials by a short wavelength laser beam, primarily changes the order of the method proposed in the above example the particles removed by the plasma shock wave. 도 2에서 제시된 실시예는 하나의 레이저를 가지고 수행한다는 측면에서 가격적으로 큰 추가부담 없이 다용도 클리닝을 수행할 수 있다는 특징이 있다. The embodiment shown in 2 is characterized by the ability to perform multi-purpose cleaning in that it has carried out one of the laser without the price points to large additional burden.

본 발명에 따른 건식 표면 클리닝 장치는 다음과 같은 분야에 구체적으로 응용하여 실시할 수 있다. Dry Surface cleaning apparatus according to the invention can be performed by the application in detail in the following areas:

1. 반도체 제조공정 중 반도체 웨이퍼 표면의 건식 세정(dry cleaning) 공정. 1. The dry scrubbing of the semiconductor wafer surface of the semiconductor manufacturing process (dry cleaning) process.

2. 평판 디스플레이(예로 LCD, TFT, PDP, OLED, ELD 등) 제조공정 중 표면 세정 공정. 2. Surface cleaning process of a flat panel display (e.g. LCD, TFT, PDP, OLED, ELD, etc.) production process.

3. 미소전자부품 혹은 정밀 가공 렌즈 등의 제조 시 표면 클리닝 혹은 리페어(repair) 공정. 3. The surface cleaning or repair (repair) process in the manufacture of electronic components such as a smile or a precision machining lens.

이상에서 설명한 바와 같이, 본 발명인 충격파를 이용한 건식 표면 클리닝 장치는 반도체 웨이퍼 및 평판 디스플레이 제조 공정중 표면 클리닝 공정으로의 적용이 가능하다. As described above, the dry-cleaning surfaces with the inventors shock wave device is applied to a surface cleaning process is possible in the semiconductor wafer and flat panel display manufacturing process. 이는 종래 세정 방법인 습식 클리닝 방법이 가지고 있는 환경적 문제, 대규모 장치에 따는 공간적 문제, 긴세정시간에 의한 생선성 문제, 열악한 작업환경 등의 문제들을 극복할 수 있는 청정 클리닝 방법이라는 특징을 가지고 있으며, 향후 고집적화, 웨이퍼크기의 대형화에 따른 단일 웨이퍼 처리방식(single wafer processing)에 있어 빠른 클리닝 속도 및 높은 효율, 그리고 한 장비로 다양한 오염물질을 제거할 수 있는 범용성을 가지고 있다는 효과를 제공한다. It has a feature that a conventional cleaning method of wet-cleaning method has environmental problems, the spatial problem, fish sex problem by a long washing time, clean cleaning method which overcomes the problems of poor working environment picker for large devices in which and it provides an effect that the next higher integration, in the single-wafer processing method according to the enlargement of the wafer size (single wafer processing) faster cleaning rates and high efficiency, and to a device with a general versatility capable of removing a variety of contaminants.

Claims (9)

  1. 삭제 delete
  2. 삭제 delete
  3. 삭제 delete
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  6. 레이저빔을 작업물 표면에 충돌시켜 작업물 표면의 오염물질을 제거하는 건식 표면 클리닝 장치에 있어서, By collision with a laser beam to the work piece surface in the dry cleaning apparatus for removing surface contaminants of the workpiece surface,
    상기 레이저빔을 대기중에 집속시켜 플라즈마 충격파를 발생시키는 플라즈마 충격파 발생장치와, And the plasma shock wave generating device that by focusing the laser beam in the atmosphere to generate plasma shock wave,
    상기 플라즈마 충격파를 발생시키기 위한 레이저빔의 광로상에 절환가능하게 설치되어, 상기 레이저빔을 상기 플라즈마 충격파를 발생시키기 위한 레이저빔과, 단파장 레이저빔으로 변조시키기 위한 레이저빔으로 선택적으로 변경하는 스위칭 미러(switching mirror)와, The plasma is provided to enable switching to the optical path of the laser beam to generate a shock wave, a switching mirror which selectively modifying the laser beam to the laser beam for modulating a laser beam and a short wavelength laser beam for generating the plasma shock wave and (switching mirror),
    상기 레이저빔을 단파장 레이저빔으로 변조시키기 위해 설치되는 주파수 하모닉 발생장치(frequency harmonic generator)와, And harmonic frequency generator (frequency harmonic generator) that is installed to modulate the laser beam in the short wavelength laser beam,
    상기 작업물을 고정하는 작업대로 이루어지고, Comprise a work table for fixing the workpiece,
    상기 플라즈마 충격파에 의한 상기 작업물 표면의 클리닝 및 상기 주파수 하모닉 발생장치를 통과하면서 변조된 단파장 레이저빔의 직접조사에 의한 상기 작업물 표면의 클리닝이 순차적으로 수행되는 것을 특징으로 하는 건식 표면 클리닝 장치. Dry surface cleaning device, characterized in that the workpiece surface cleaning and the cleaning of the workpiece surface by the direct irradiation of the short wavelength laser beam is modulated while passing through the frequency harmonic generator sequentially performed in by the plasma shock wave.
  7. 제 6항에 있어서, 7. The method of claim 6,
    상기 플라즈마 충격파를 발생시키기 위한 레이저빔으로 기본 파장이 1064 nm인 Nd:YAG 레이저빔을 사용하며, 상기 주파수 하모닉 발생장치는 상기 기본파장의 레이저빔을 파장이 532 nm(반파장), 355 nm(1/3 파장), 266 nm(1/4 파장)인 단파장 레이저 빔(short wavelength laser)으로 변조시키는 것을 특징으로 하는 건식 표면 클리닝 장치. Said plasma with the laser beam for generating a shock wave is the fundamental wavelength 1064 nm of Nd: using a YAG laser beam, and the frequency harmonic generator is the fundamental wavelength laser beam having a wavelength of 532 nm (half-wave) of, 355 nm ( dry surface cleaning device, comprising a step of modulating the 1/3 wavelength), 266 nm (1/4 the wavelength) of the short wavelength laser beam (short wavelength laser).
  8. 제 6항에 있어서, 7. The method of claim 6,
    상기 단파장 레이저빔은 작업물의 수직면을 기준으로 45 o ∼ 85 o 의 입사각도를 가지고 직접 조사되는 것을 특징으로 하는 건식 표면 클리닝 장치. The short wavelength laser beam is dry surface cleaning apparatus being directly irradiated with the incident angle of 45 o ~ 85 o relative to the vertical plane of the workpiece.
  9. 제 6항에 있어서, 7. The method of claim 6,
    상기 단파장 레이저빔과 플라즈마 충격파를 함께 이용해 클리닝을 수행할 시, 작업대의 중심축을 기준으로 작업물을 회전시키면서 클리닝을 수행하는 것을 특징으로 하는 건식 표면 클리닝 장치. Dry surface cleaning apparatus which is characterized in that when performing the cleaning with the use of the short wavelength laser beam and a plasma shock wave, while rotating the workpiece, based on the central axis of the work table to perform the cleaning.
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