WO2018045658A1 - Amoled显示装置 - Google Patents

Amoled显示装置 Download PDF

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Publication number
WO2018045658A1
WO2018045658A1 PCT/CN2016/110245 CN2016110245W WO2018045658A1 WO 2018045658 A1 WO2018045658 A1 WO 2018045658A1 CN 2016110245 W CN2016110245 W CN 2016110245W WO 2018045658 A1 WO2018045658 A1 WO 2018045658A1
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layer
disposed
cathode
display device
amoled display
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French (fr)
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韩佰祥
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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Priority to US15/328,491 priority Critical patent/US10074711B2/en
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/441—Interconnections, e.g. scanning lines
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/123—Connection of the pixel electrodes to the thin film transistors [TFT]
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    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/01—Manufacture or treatment
    • H10D86/021—Manufacture or treatment of multiple TFTs
    • H10D86/0221—Manufacture or treatment of multiple TFTs comprising manufacture, treatment or patterning of TFT semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/451—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs characterised by the compositions or shapes of the interlayer dielectrics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
    • H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
    • H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/15—Hole transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/14—Carrier transporting layers
    • H10K50/16—Electron transporting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/17—Carrier injection layers
    • H10K50/171—Electron injection layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/818—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/824—Cathodes combined with auxiliary electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H10K59/1315—Interconnections, e.g. wiring lines or terminals comprising structures specially adapted for lowering the resistance
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80518—Reflective anodes, e.g. ITO combined with thick metallic layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80522—Cathodes combined with auxiliary electrodes

Definitions

  • the present invention relates to the field of display technologies, and in particular, to an AMOLED display device.
  • OLED Organic Light-Emitting Diode
  • organic electroluminescent display also known as an organic electroluminescent display
  • OLED Organic Light-Emitting Diode
  • High definition and contrast ratio, near 180° viewing angle, wide temperature range, flexible display and large-area full-color display, etc., are recognized by the industry as the most promising display device.
  • OLED can be divided into two types: passive matrix OLED (PMOLED) and active matrix OLED (AMOLED), namely direct addressing and thin film transistor matrix addressing.
  • PMOLED passive matrix OLED
  • AMOLED active matrix OLED
  • the AMOLED has pixels arranged in an array, belongs to an active display type, has high luminous efficiency, and is generally used as a high-definition large-sized display device.
  • the AMOLED generally includes a substrate, an anode provided on the substrate, a hole injection layer provided on the anode, a hole transport layer provided on the hole injection layer, a light-emitting layer provided on the hole transport layer, and a light-emitting layer.
  • the principle of luminescence of OLED display devices is that semiconductor materials and organic luminescent materials are driven by electric fields, causing luminescence by carrier injection and recombination.
  • an OLED display device generally employs an ITO pixel electrode and a metal electrode as anodes and cathodes of the device, respectively.
  • electrons and holes are injected from the cathode and the anode to the electron transport layer and the hole transport layer, respectively.
  • the holes migrate to the light-emitting layer through the electron transport layer and the hole transport layer, respectively, and meet in the light-emitting layer to form excitons and excite the light-emitting molecules, and the latter emits visible light through radiation relaxation.
  • FIG. 1 is a schematic structural diagram of a conventional AMOLED display device including a substrate substrate 100, a gate electrode 200 disposed on the substrate substrate 100, and a gate electrode 200 and a substrate.
  • a gate insulating layer 300 on the substrate 100 an active layer 400 disposed on the gate insulating layer 300 and corresponding to the gate 200, and disposed on the active layer 400 and the gate insulating layer 300
  • the etch stop layer 500, the source 610 and the drain 620 disposed on the etch stop layer 500, and the first planar layer 710 disposed on the source 610, the drain 620 and the etch stop layer 500
  • An anode 800 disposed on the first planar layer 710 and connected to the drain 620 is disposed on the anode a second flat layer 720 on the pole 800 and the first flat layer 710, a light emitting layer 900 disposed in the via 725 on the second flat layer 720, and the light emitting layer 900 and the second flat layer 720.
  • the cathode 910 in the AMOLED display device, is a full-surface electrode covering a display area of the entire AMOLED display device, and has a large size. In the normal display process, the current signal needs to be taken from the AMOLED display device.
  • a certain point of the edge of the cathode 910 is conducted to the center and other regions of the cathode 910, the conduction path is long, and the cathode 910 is usually a thin metal electrode, and the resistance is large, and the current signal conduction path is In the longer case, the problem of voltage drop (IR Drop) is likely to occur in the entire display circuit, that is, the actual voltage transmitted to the cathode 910 is lower than the set voltage, resulting in poor display performance and power loss. many.
  • IR Drop voltage drop
  • a cathode connection line is introduced inside the AMOLED display device, and the cathode connection line includes a layer on the same layer as the source 610 and the drain 620.
  • a metal block 630, a first through layer 710 and a second flat layer 720 between the cathode 910 and the metal block 630 are provided with a through hole 750 through which the cathode 910 and the metal block 630 pass.
  • such a cathode connection line causes an external current signal to be introduced from the inside of each pixel to the cathode 910 via the metal block 630, eliminating the conduction of current signals from the edge to the center of the cathode 910, shortening the current
  • the conduction path of the signal, and generally the metal block 630 is made of a material having a lower resistivity and is provided with a larger thickness, so that the resistance of the metal block 630 is smaller, so that the resistance of the entire display circuit is lowered, thereby reducing the voltage drop.
  • the display effect and the power loss situation are improved; however, the method still has a problem that since the metal block 630 is disposed inside each pixel, it needs to occupy a part of the image.
  • the layout space is such that it affects the overall pixel layout of the AMOLED display device.
  • the present invention provides an AMOLED display device comprising: a base substrate, a cathode connection layer disposed on the base substrate, and a buffer layer disposed on the cathode connection layer, disposed in the buffer a gate on the layer, a gate insulating layer disposed on the gate and the buffer layer, an active layer disposed on the gate insulating layer and corresponding to the gate, and disposed on the active layer
  • An etch barrier layer on the layer and the gate insulating layer, a first via hole and a second via hole disposed on the etch stop layer and respectively corresponding to both sides of the active layer, and the etching is provided on the etch layer a source and a drain on the barrier layer that are in contact with the active layer via the first via and the second via, respectively, and a first one disposed on the source, the drain, and the etch barrier a flat layer, a third via hole disposed on the first planar layer and corresponding to the drain, disposed on the first planar layer and via
  • a fifth via hole is disposed on the buffer layer, the gate insulating layer, the etch barrier layer, the first planar layer and the second planar layer, and the cathode is connected to the cathode connection layer via the fifth via hole .
  • a fifth through hole is defined in one pixel corresponding to each of the light emitting layers.
  • the cathode connecting layer is a continuous uninterrupted full-surface metal layer or a metal layer provided with a hollowed-out region; the cathode connecting layer has a size equal to or smaller than a size of the base substrate.
  • the material of the cathode connection layer includes at least one of silver, aluminum, copper, and gold.
  • the cathode connection layer has a thickness of 0.3 ⁇ m to 1 ⁇ m.
  • the cathode is a continuous uninterrupted full-face metal layer that is sized to cover the entire display area of the AMOLED display device.
  • the cathode is a composite metal layer formed by superposing a magnesium layer and an aluminum layer, or a single metal layer prepared from a magnesium aluminum alloy.
  • the cathode has a thickness of 100 nm to 200 nm.
  • the anode is a reflective electrode.
  • the AMOLED display device further includes an ESD metal block, the ESD metal block is in the same layer as the source and the drain, and the buffer layer and the gate insulating layer are And a sixth via hole is disposed on the etch barrier layer, and the electrostatic discharge metal block is connected to the cathode connection layer via the sixth via hole.
  • the present invention also provides an AMOLED display device, comprising: a base substrate, a cathode connection layer disposed on the base substrate, a buffer layer disposed on the cathode connection layer, and a gate disposed on the buffer layer a gate insulating layer disposed on the gate and the buffer layer, an active layer disposed on the gate insulating layer and corresponding to the gate, and the active layer and the gate An etch barrier layer on the insulating layer, a first via hole and a second via hole disposed on the etch stop layer and respectively corresponding to the two sides of the active layer, and disposed on the etch barrier layer a source and a drain that are in contact with the active layer via the first via and the second via, and a first flat layer disposed on the source, the drain, and the etch barrier a third via hole on the first planar layer and corresponding to the drain, an anode disposed on the first planar layer and in contact with the drain via the third via hole a second planar layer on the anode and the
  • a fifth via hole is disposed on the buffer layer, the gate insulating layer, the etch barrier layer, the first planar layer and the second planar layer, and the cathode is connected to the cathode connection layer via the fifth via hole ;
  • the material of the cathode connection layer comprises at least one of silver, aluminum, copper and gold;
  • the cathode connection layer has a thickness of 0.3 ⁇ m to 1 ⁇ m;
  • the cathode is a composite metal layer formed by superposing a magnesium layer and an aluminum layer, or a single metal layer prepared from a magnesium aluminum alloy;
  • the cathode has a thickness of 100 nm to 200 nm.
  • an AMOLED display device provides a cathode connection layer on a base substrate and a connection between a cathode and a cathode connection layer through through holes in each structural layer, so that the AMOLED display device is normal.
  • a current signal is conducted from the cathode connection layer to the cathode, and a current signal is transmitted from inside each pixel to the cathode, shortening the current signal conduction path and reducing the current compared to the conventional AMOLED display device.
  • the resistance in the current signal conduction path is beneficial to improving the display effect of the AMOLED display device and reducing the power loss; meanwhile, since the cathode connection layer is provided on the base substrate, the cathode and cathode connection layers are The connection requires only one via, so it does not take up too much pixel layout space and does not affect the overall pixel layout of the AMOLED display device.
  • FIG. 1 is a schematic structural view of a conventional AMOLED display device
  • FIG. 2 is a schematic structural view of another conventional AMOLED display device
  • FIG. 3 is a schematic structural view of a first embodiment of an AMOLED display device of the present invention.
  • FIG. 4 is a schematic structural view of a second embodiment of an AMOLED display device of the present invention.
  • the present invention provides an AMOLED display device comprising: a substrate substrate 10, a cathode connection layer 11 disposed on the substrate substrate 10, a buffer layer 12 disposed on the cathode connection layer 11, a gate electrode 13 disposed on the buffer layer 12, a gate insulating layer 14 disposed on the gate electrode 13 and the buffer layer 12, and a gate insulating layer 14 disposed on the gate insulating layer 14 and corresponding to the gate electrode 13
  • the active layer 15 and the etch stop layer 20 disposed on the active layer 15 and the gate insulating layer 14 are disposed on the etch stop layer 20 and respectively correspond to the sides of the active layer 15 a first via 21 and a second via 22, a source disposed on the etch stop layer 20 and contacting the active layer 15 via the first via 21 and the second via 22, respectively a first 31 and a drain 32 , a first planar layer 40 disposed on the source 31 , the drain 32 , and the etch stop layer 20 , and disposed on the first planar layer 40 and
  • the buffer layer 12, the gate insulating layer 14, the etch stop layer 20, the first flat layer 40, and the second flat layer 60 are provided with a fifth through hole 95 through which the cathode 80 passes. It is connected to the cathode connection layer 11.
  • a pixel corresponding to each of the light emitting layers 70 is provided with a fifth through hole 95, so that a current signal is transmitted from the inside of each pixel to the cathode 80, thereby making each pixel
  • the conduction path of the current signal conducted from the cathode connection layer 11 to the cathode 80 remains uniform and shortens with respect to the conventional current conduction path, which is advantageous in reducing the voltage drop in the entire display circuit.
  • the cathode connection layer 11 is a continuous uninterrupted full-surface metal layer or a metal layer provided with a hollow region therebetween; the size of the cathode connection layer 11 is less than or equal to the size of the base substrate 10.
  • the material of the cathode connection layer 11 is a conductive material with low resistivity; preferably, the material of the cathode connection layer 11 includes silver (Ag), aluminum (Al), copper (Cu), and gold (Au). At least one of them.
  • the thickness of the cathode connection layer 11 is 0.3 ⁇ m to 1 ⁇ m, preferably 0.5 ⁇ m, and the greater the thickness of the cathode connection layer 11, the lower the resistance of the cathode connection layer 11.
  • the cathode 80 is a continuous uninterrupted full-surface metal layer, and the cathode 80 is sized to cover the entire display area of the AMOLED display device, that is, the light-emitting layers 70 of the plurality of pixels share the same cathode 80.
  • the cathode 80 is a composite metal layer formed by superposing a magnesium layer and an aluminum layer, or a single metal layer prepared from a magnesium aluminum alloy.
  • the cathode 80 has a thickness of 100 nm to 200 nm, preferably 100 nm.
  • the AMOLED display device of the present invention is a top-emitting display device, that is, the side of the cathode 80 is a light-emitting side, so the arrangement of the cathode connection layer 11 is not displayed on the AMOLED.
  • the screen display of the device has an effect.
  • the anode 50 is a reflective electrode; preferably, the anode 50 is sandwiched by a layer of two indium tin oxide (ITO). a composite layer composed of layers.
  • ITO indium tin oxide
  • the AMOLED display device further includes an electrostatic discharge metal block 35, the electrostatic discharge metal block 35 and the source. 31 and the drain 32 are located in the same layer, and the buffer layer 12, the gate insulating layer 14 and the etch stop layer 20 are provided with a sixth through hole 96, and the electrostatic discharge metal block 35 passes through the sixth through hole 96.
  • the cathode connection layer 11 is connected so that the electrostatic charge absorbed on the electrostatic discharge metal block 35 is introduced onto the cathode connection layer 11 having a larger area and released on the cathode connection layer 11.
  • the base substrate 10 is a glass substrate or a plastic substrate
  • the material of the gate electrode 13 , the source electrode 31 , the drain electrode 32 and the electrostatic discharge metal block 35 is a metal, preferably at least one of molybdenum (Mo), aluminum (Al), copper (Cu), and titanium (Ti). ;
  • the material of the buffer layer 12, the gate insulating layer 14 and the etch stop layer 20 respectively comprise at least one of silicon oxide (SiOx) and silicon nitride (SiNx);
  • the material of the active layer 15 includes at least one of amorphous silicon, polycrystalline silicon, and a metal oxide semiconductor;
  • the material of the first flat layer 40 and the second flat layer 60 is an organic insulating material
  • the material of the light emitting layer 70 is an organic light emitting material.
  • the present invention provides an AMOLED display device in which a cathode connection layer is formed on a base substrate and a cathode and a cathode connection layer are connected through through holes in each structural layer, so that the AMOLED display device is normally displayed.
  • a current signal is conducted from the cathode connection layer to the cathode, and a current signal is transmitted from inside each pixel to the cathode, shortening a current signal conduction path and reducing a current signal compared to a conventional AMOLED display device
  • the resistance in the conduction path, thereby reducing the voltage drop in the display circuit, is beneficial to improving the display effect of the AMOLED display device and reducing the power loss; meanwhile, since the cathode connection layer is disposed on the base substrate, the connection between the cathode and the cathode connection layer is only A through hole is required, so it does not occupy too much pixel layout space and does not affect the overall pixel layout of the AMOLED display device.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electroluminescent Light Sources (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)

Abstract

提供一种AMOLED显示装置，通过在衬底基板（10）上形成阴极连接层（11），并通过各结构层上的通孔实现阴极（80）与阴极连接层（11）的连接，使得AMOLED显示装置正常显示时，电流信号从所述阴极连接层（11）传导至所述阴极（80），实现电流信号从每个像素内部传导至所述阴极（80），与传统的AMOLED显示装置相比，缩短了电流信号传导路径，并且降低了电流信号传导路径中的电阻，从而降低显示电路中的电压降，有利于改善AMOLED显示装置的显示效果并降低电能损耗；同时，由于阴极连接层设于衬底基板上，阴极与阴极连接层的连接只需要一个通孔，因此不会占用太多像素布局空间，不会影响AMOLED显示装置的整体像素布局。

Description

AMOLED显示装置 技术领域
本发明涉及显示技术领域，尤其涉及一种AMOLED显示装置。
背景技术
有机发光二极管(Organic Light-Emitting Diode，OLED)显示器，也称为有机电致发光显示器，是一种新兴的平板显示装置，由于其具有自发光、驱动电压低、发光效率高、响应时间短、清晰度与对比度高、近180°视角、使用温度范围宽，可实现柔性显示与大面积全色显示等诸多优点，被业界公认为是最有发展潜力的显示装置。
OLED按照驱动方式可以分为无源矩阵型OLED(Passive Matrix OLED，PMOLED)和有源矩阵型OLED(Active Matrix OLED，AMOLED)两大类，即直接寻址和薄膜晶体管矩阵寻址两类。其中，AMOLED具有呈阵列式排布的像素，属于主动显示类型，发光效能高，通常用作高清晰度的大尺寸显示装置。
AMOLED通常包括：基板、设于基板上的阳极、设于阳极上的空穴注入层、设于空穴注入层上的空穴传输层、设于空穴传输层上的发光层、设于发光层上的电子传输层、设于电子传输层上的电子注入层、及设于电子注入层上的阴极。OLED显示器件的发光原理为半导体材料和有机发光材料在电场驱动下，通过载流子注入和复合导致发光。具体的，OLED显示器件通常采用ITO像素电极和金属电极分别作为器件的阳极和阴极，在一定电压驱动下，电子和空穴分别从阴极和阳极注入到电子传输层和空穴传输层，电子和空穴分别经过电子传输层和空穴传输层迁移到发光层，并在发光层中相遇，形成激子并使发光分子激发，后者经过辐射弛豫而发出可见光。
图1为现有的一种AMOLED显示装置的结构示意图，所述AMOLED显示装置包括衬底基板100、设于所述衬底基板100上的栅极200、设于所述栅极200及衬底基板100上的栅极绝缘层300、设于所述栅极绝缘层300上且对应于所述栅极200上方的有源层400、设于所述有源层400及栅极绝缘层300上的刻蚀阻挡层500、设于所述刻蚀阻挡层500上的源极610与漏极620、设于所述源极610、漏极620及刻蚀阻挡层500上的第一平坦层710、设于所述第一平坦层710上且与所述漏极620相连的阳极800、设于所述阳 极800及第一平坦层710上的第二平坦层720、设于所述第二平坦层720上的过孔725中的发光层900、以及设于所述发光层900及第二平坦层720上的阴极910；在该AMOLED显示装置中，所述阴极910为覆盖整个AMOLED显示装置的显示区域的整面电极，尺寸较大，这种AMOLED显示装置在正常显示过程中，电流信号需要从所述阴极910的边缘的某个位点传导至所述阴极910的中心及其它区域，传导路径较长，并且所述阴极910通常为厚度较薄的金属电极，电阻较大，在电流信号传导路径较长的情况下，整个显示电路中很容易出现电压降(IR Drop)的问题，即传导到阴极910上的实际电压比设定的电压要低，从而导致显示效果较差，且电能损耗较多。
针对上述问题，现有一种改善的方法，如图2所示，在所述AMOLED显示装置内部引入阴极连接线路，所述阴极连接线路包括与所述源极610及漏极620位于同一层的一金属块630，所述阴极910与所述金属块630之间的第一平坦层710与第二平坦层720上设有通孔750，所述阴极910与所述金属块630通过该通孔750相连接，这样的阴极连接线路使得外部电流信号从每个像素内部经由所述金属块630引入到所述阴极910上，省去了电流信号从所述阴极910边缘至中心的传导，缩短了电流信号的传导路径，并且通常所述金属块630选用电阻率较低的材料并设置较大的厚度，因此所述金属块630的电阻较小，使得整个显示电路的电阻降低，从而降低电压降，改善显示效果及电能损耗情况；但是，该方法依然存在一个问题，即，由于所述金属块630设置于每个像素的内部，因此需要占用一部分像素布局空间，从而对AMOLED显示装置的整体像素布局造成影响。
发明内容
本发明的目的在于提供一种AMOLED显示装置，可降低显示电路中的电压降，且不会影响AMOLED显示装置的整体像素布局。
为实现上述目的，本发明提供一种AMOLED显示装置，包括：衬底基板、设于所述衬底基板上的阴极连接层、设于所述阴极连接层上的缓冲层、设于所述缓冲层上的栅极、设于所述栅极及缓冲层上的栅极绝缘层、设于所述栅极绝缘层上且对应于所述栅极上方的有源层、设于所述有源层及栅极绝缘层上的刻蚀阻挡层、设于所述刻蚀阻挡层上且分别对应于所述有源层两侧的第一通孔与第二通孔、设于所述刻蚀阻挡层上且分别经由所述第一通孔及第二通孔与所述有源层相接触的源极及漏极、设于所述源极、漏极及刻蚀阻挡层上的第一平坦层、设于所述第一平坦层上且对应于所述漏极上方的第三通孔、设于所述第一平坦层上且经由所述第三通孔与所述漏 极相接触的阳极、设于所述阳极及第一平坦层上的第二平坦层、设于所述第二平坦层上且对应于所述阳极上方的第四通孔、设于所述第四通孔内且与所述阳极相接触的发光层、以及设于所述发光层与第二平坦层上的阴极；
所述缓冲层、栅极绝缘层、刻蚀阻挡层、第一平坦层及第二平坦层上设有第五通孔，所述阴极经由所述第五通孔与所述阴极连接层相连接。
每个发光层对应的一个像素中均设有一个第五通孔。
所述阴极连接层为连续不间断的整面金属层或者中间设有镂空区域的金属层；所述阴极连接层的尺寸小于等于所述衬底基板的尺寸。
所述阴极连接层的材料包括银、铝、铜及金中的至少一种。
所述阴极连接层的厚度为0.3μm～1μm。
所述阴极为连续不间断的整面金属层，所述阴极的尺寸为覆盖所述AMOLED显示装置的整个显示区域。
所述阴极为由镁层与铝层叠加构成的复合金属层，或者为由镁铝合金制备的单一金属层。
所述阴极的厚度为100nm～200nm。
所述阳极为反射型电极。
在本发明的一优选实施例中，所述AMOLED显示装置还包括一静电放电金属块，所述静电放电金属块与所述源极及漏极位于同一层，所述缓冲层、栅极绝缘层及刻蚀阻挡层上设有第六通孔，所述静电放电金属块经由所述第六通孔与所述阴极连接层相连接。
本发明还提供一种AMOLED显示装置，包括：衬底基板、设于所述衬底基板上的阴极连接层、设于所述阴极连接层上的缓冲层、设于所述缓冲层上的栅极、设于所述栅极及缓冲层上的栅极绝缘层、设于所述栅极绝缘层上且对应于所述栅极上方的有源层、设于所述有源层及栅极绝缘层上的刻蚀阻挡层、设于所述刻蚀阻挡层上且分别对应于所述有源层两侧的第一通孔与第二通孔、设于所述刻蚀阻挡层上且分别经由所述第一通孔及第二通孔与所述有源层相接触的源极及漏极、设于所述源极、漏极及刻蚀阻挡层上的第一平坦层、设于所述第一平坦层上且对应于所述漏极上方的第三通孔、设于所述第一平坦层上且经由所述第三通孔与所述漏极相接触的阳极、设于所述阳极及第一平坦层上的第二平坦层、设于所述第二平坦层上且对应于所述阳极上方的第四通孔、设于所述第四通孔内且与所述阳极相接触的发光层、以及设于所述发光层与第二平坦层上的阴极；
所述缓冲层、栅极绝缘层、刻蚀阻挡层、第一平坦层及第二平坦层上设有第五通孔，所述阴极经由所述第五通孔与所述阴极连接层相连接；
其中，所述阴极连接层的材料包括银、铝、铜及金中的至少一种；
其中，所述阴极连接层的厚度为0.3μm～1μm；
其中，所述阴极为由镁层与铝层叠加构成的复合金属层，或者为由镁铝合金制备的单一金属层；
其中，所述阴极的厚度为100nm～200nm。
本发明的有益效果：本发明提供的一种AMOLED显示装置，通过在衬底基板上形成阴极连接层，并通过各结构层上的通孔实现阴极与阴极连接层的连接，使得AMOLED显示装置正常显示时，电流信号从所述阴极连接层传导至所述阴极，实现电流信号从每个像素内部传导至所述阴极，与传统的AMOLED显示装置相比，缩短了电流信号传导路径，并且降低了电流信号传导路径中的电阻，从而降低显示电路中的电压降，有利于改善AMOLED显示装置的显示效果并降低电能损耗；同时，由于阴极连接层设于衬底基板上，阴极与阴极连接层的连接只需要一个通孔，因此不会占用太多像素布局空间，不会影响AMOLED显示装置的整体像素布局。
为了能更进一步了解本发明的特征以及技术内容，请参阅以下有关本发明的详细说明与附图，然而附图仅提供参考与说明用，并非用来对本发明加以限制。
附图说明
下面结合附图，通过对本发明的具体实施方式详细描述，将使本发明的技术方案及其它有益效果显而易见。
附图中，
图1为现有的一种AMOLED显示装置的结构示意图；
图2为现有的另一种AMOLED显示装置的结构示意图；
图3为本发明的AMOLED显示装置的第一实施例的结构示意图；
图4为本发明的AMOLED显示装置的第二实施例的结构示意图。
具体实施方式
为更进一步阐述本发明所采取的技术手段及其效果，以下结合本发明的优选实施例及其附图进行详细描述。
请参阅图3，本发明提供一种AMOLED显示装置，包括：衬底基板10、设于所述衬底基板10上的阴极连接层11、设于所述阴极连接层11上的缓冲层12、设于所述缓冲层12上的栅极13、设于所述栅极13及缓冲层12上的栅极绝缘层14、设于所述栅极绝缘层14上且对应于所述栅极13上方 的有源层15、设于所述有源层15及栅极绝缘层14上的刻蚀阻挡层20、设于所述刻蚀阻挡层20上且分别对应于所述有源层15两侧的第一通孔21与第二通孔22、设于所述刻蚀阻挡层20上且分别经由所述第一通孔21及第二通孔22与所述有源层15相接触的源极31及漏极32、设于所述源极31、漏极32及刻蚀阻挡层20上的第一平坦层40、设于所述第一平坦层40上且对应于所述漏极32上方的第三通孔43、设于所述第一平坦层40上且经由所述第三通孔43与所述漏极32相接触的阳极50、设于所述阳极50及第一平坦层40上的第二平坦层60、设于所述第二平坦层60上且对应于所述阳极50上方的第四通孔64、设于所述第四通孔64内且与所述阳极50相接触的发光层70、以及设于所述发光层70与第二平坦层60上的阴极80；
所述缓冲层12、栅极绝缘层14、刻蚀阻挡层20、第一平坦层40及第二平坦层60上设有第五通孔95，所述阴极80经由所述第五通孔95与所述阴极连接层11相连接。
具体的，所述AMOLED显示装置中，每个发光层70对应的一个像素中均设有一个第五通孔95，使得电流信号从每个像素内部传导至所述阴极80，从而使得每个像素中从所述阴极连接层11传导至所述阴极80的电流信号的传导路径保持一致并且相对于传统的电流传导路径均缩短，有利于降低整个显示电路中的电压降。
具体的，所述阴极连接层11为连续不间断的整面金属层或者中间设有镂空区域的金属层；所述阴极连接层11的尺寸小于等于所述衬底基板10的尺寸。
具体的，所述阴极连接层11的材料为电阻率低的导电材料；优选的，所述阴极连接层11的材料包括银(Ag)、铝(Al)、铜(Cu)及金(Au)中的至少一种。
具体的，所述阴极连接层11的厚度为0.3μm～1μm，优选为0.5μm，并且所述阴极连接层11的厚度越大，所述阴极连接层11的电阻越低。
具体的，所述阴极80为连续不间断的整面金属层，所述阴极80的尺寸为覆盖所述AMOLED显示装置的整个显示区域，即多个像素中的发光层70共用同一个阴极80。
具体的，所述阴极80为由镁层与铝层叠加构成的复合金属层，或者为由镁铝合金制备的单一金属层。
具体的，所述阴极80的厚度为100nm～200nm，优选为100nm。
具体的，本发明的AMOLED显示装置为顶发光型显示装置，即所述阴极80一侧为出光侧，因此所述阴极连接层11的设置不会对AMOLED显示 装置的画面显示造成影响。
进一步的，由于本发明的AMOLED显示装置为顶发光型显示装置，因此所述阳极50为反射型电极；优选的，所述阳极50为由两氧化铟锡(ITO)层夹合一银(Ag)层构成的复合层。
请参阅图4，为本发明的AMOLED显示装置的第二实施例，在该实施例中，所述AMOLED显示装置还包括一静电放电金属块35，所述静电放电金属块35与所述源极31及漏极32位于同一层，所述缓冲层12、栅极绝缘层14及刻蚀阻挡层20上设有第六通孔96，所述静电放电金属块35经由所述第六通孔96与所述阴极连接层11相连接，从而将所述静电放电金属块35上吸收的静电电荷引入到面积较大的阴极连接层11上并在所述阴极连接层11上释放掉。
具体的，所述衬底基板10为玻璃基板或塑料基板；
所述栅极13、源极31、漏极32及静电放电金属块35的材料为金属，优选为钼(Mo)、铝(Al)、铜(Cu)、钛(Ti)中的至少一种；
所述缓冲层12、栅极绝缘层14及刻蚀阻挡层20的材料分别包括氧化硅(SiOx)与氮化硅(SiNx)的至少一种；
所述有源层15的材料包括非晶硅、多晶硅及金属氧化物半导体中的至少一种；
所述第一平坦层40与第二平坦层60的材料为有机绝缘材料；
所述发光层70的材料为有机发光材料。
综上所述，本发明提供一种AMOLED显示装置，通过在衬底基板上形成阴极连接层，并通过各结构层上的通孔实现阴极与阴极连接层的连接，使得AMOLED显示装置正常显示时，电流信号从所述阴极连接层传导至所述阴极，实现电流信号从每个像素内部传导至所述阴极，与传统的AMOLED显示装置相比，缩短了电流信号传导路径，并且降低了电流信号传导路径中的电阻，从而降低显示电路中的电压降，有利于改善AMOLED显示装置的显示效果并降低电能损耗；同时，由于阴极连接层设于衬底基板上，阴极与阴极连接层的连接只需要一个通孔，因此不会占用太多像素布局空间，不会影响AMOLED显示装置的整体像素布局。
以上所述，对于本领域的普通技术人员来说，可以根据本发明的技术方案和技术构思作出其他各种相应的改变和变形，而所有这些改变和变形都应属于本发明权利要求的保护范围。

Claims (16)

  1. 一种AMOLED显示装置，包括：衬底基板、设于所述衬底基板上的阴极连接层、设于所述阴极连接层上的缓冲层、设于所述缓冲层上的栅极、设于所述栅极及缓冲层上的栅极绝缘层、设于所述栅极绝缘层上且对应于所述栅极上方的有源层、设于所述有源层及栅极绝缘层上的刻蚀阻挡层、设于所述刻蚀阻挡层上且分别对应于所述有源层两侧的第一通孔与第二通孔、设于所述刻蚀阻挡层上且分别经由所述第一通孔及第二通孔与所述有源层相接触的源极及漏极、设于所述源极、漏极及刻蚀阻挡层上的第一平坦层、设于所述第一平坦层上且对应于所述漏极上方的第三通孔、设于所述第一平坦层上且经由所述第三通孔与所述漏极相接触的阳极、设于所述阳极及第一平坦层上的第二平坦层、设于所述第二平坦层上且对应于所述阳极上方的第四通孔、设于所述第四通孔内且与所述阳极相接触的发光层、以及设于所述发光层与第二平坦层上的阴极；
    所述缓冲层、栅极绝缘层、刻蚀阻挡层、第一平坦层及第二平坦层上设有第五通孔，所述阴极经由所述第五通孔与所述阴极连接层相连接。
  2. 如权利要求1所述的AMOLED显示装置，其中，每个发光层对应的一个像素中均设有一个第五通孔。
  3. 如权利要求1所述的AMOLED显示装置，其中，所述阴极连接层为连续不间断的整面金属层或者中间设有镂空区域的金属层；所述阴极连接层的尺寸小于等于所述衬底基板的尺寸。
  4. 如权利要求1所述的AMOLED显示装置，其中，所述阴极连接层的材料包括银、铝、铜及金中的至少一种。
  5. 如权利要求1所述的AMOLED显示装置，其中，所述阴极连接层的厚度为0.3μm～1μm。
  6. 如权利要求1所述的AMOLED显示装置，其中，所述阴极为连续不间断的整面金属层，所述阴极的尺寸为覆盖所述AMOLED显示装置的整个显示区域。
  7. 如权利要求1所述的AMOLED显示装置，其中，所述阴极为由镁层与铝层叠加构成的复合金属层，或者为由镁铝合金制备的单一金属层。
  8. 如权利要求1所述的AMOLED显示装置，其中，所述阴极的厚度为100nm～200nm。
  9. 如权利要求1所述的AMOLED显示装置，其中，所述阳极为反射 型电极。
  10. 如权利要求1所述的AMOLED显示装置，还包括一静电放电金属块，所述静电放电金属块与所述源极及漏极位于同一层，所述缓冲层、栅极绝缘层及刻蚀阻挡层上设有第六通孔，所述静电放电金属块经由所述第六通孔与所述阴极连接层相连接。
  11. 一种AMOLED显示装置，包括：衬底基板、设于所述衬底基板上的阴极连接层、设于所述阴极连接层上的缓冲层、设于所述缓冲层上的栅极、设于所述栅极及缓冲层上的栅极绝缘层、设于所述栅极绝缘层上且对应于所述栅极上方的有源层、设于所述有源层及栅极绝缘层上的刻蚀阻挡层、设于所述刻蚀阻挡层上且分别对应于所述有源层两侧的第一通孔与第二通孔、设于所述刻蚀阻挡层上且分别经由所述第一通孔及第二通孔与所述有源层相接触的源极及漏极、设于所述源极、漏极及刻蚀阻挡层上的第一平坦层、设于所述第一平坦层上且对应于所述漏极上方的第三通孔、设于所述第一平坦层上且经由所述第三通孔与所述漏极相接触的阳极、设于所述阳极及第一平坦层上的第二平坦层、设于所述第二平坦层上且对应于所述阳极上方的第四通孔、设于所述第四通孔内且与所述阳极相接触的发光层、以及设于所述发光层与第二平坦层上的阴极；
    所述缓冲层、栅极绝缘层、刻蚀阻挡层、第一平坦层及第二平坦层上设有第五通孔，所述阴极经由所述第五通孔与所述阴极连接层相连接；
    其中，所述阴极连接层的材料包括银、铝、铜及金中的至少一种；
    其中，所述阴极连接层的厚度为0.3μm～1μm；
    其中，所述阴极为由镁层与铝层叠加构成的复合金属层，或者为由镁铝合金制备的单一金属层；
    其中，所述阴极的厚度为100nm～200nm。
  12. 如权利要求11所述的AMOLED显示装置，其中，每个发光层对应的一个像素中均设有一个第五通孔。
  13. 如权利要求11所述的AMOLED显示装置，其中，所述阴极连接层为连续不间断的整面金属层或者中间设有镂空区域的金属层；所述阴极连接层的尺寸小于等于所述衬底基板的尺寸。
  14. 如权利要求11所述的AMOLED显示装置，其中，所述阴极为连续不间断的整面金属层，所述阴极的尺寸为覆盖所述AMOLED显示装置的整个显示区域。
  15. 如权利要求11所述的AMOLED显示装置，其中，所述阳极为反射型电极。
  16. 如权利要求11所述的AMOLED显示装置，还包括一静电放电金属块，所述静电放电金属块与所述源极及漏极位于同一层，所述缓冲层、栅极绝缘层及刻蚀阻挡层上设有第六通孔，所述静电放电金属块经由所述第六通孔与所述阴极连接层相连接。
PCT/CN2016/110245 2016-09-09 2016-12-16 Amoled显示装置 Ceased WO2018045658A1 (zh)

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