WO2018028232A1 - 有机发光二极管照明灯片及其制备方法 - Google Patents

有机发光二极管照明灯片及其制备方法 Download PDF

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WO2018028232A1
WO2018028232A1 PCT/CN2017/080239 CN2017080239W WO2018028232A1 WO 2018028232 A1 WO2018028232 A1 WO 2018028232A1 CN 2017080239 W CN2017080239 W CN 2017080239W WO 2018028232 A1 WO2018028232 A1 WO 2018028232A1
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substrate
electrode
region
film
layer
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PCT/CN2017/080239
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English (en)
French (fr)
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孙杰
李重君
钟杰兴
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京东方科技集团股份有限公司
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Priority to US15/570,891 priority Critical patent/US10651429B2/en
Publication of WO2018028232A1 publication Critical patent/WO2018028232A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F21—LIGHTING
    • F21K—NON-ELECTRIC LIGHT SOURCES USING LUMINESCENCE; LIGHT SOURCES USING ELECTROCHEMILUMINESCENCE; LIGHT SOURCES USING CHARGES OF COMBUSTIBLE MATERIAL; LIGHT SOURCES USING SEMICONDUCTOR DEVICES AS LIGHT-GENERATING ELEMENTS; LIGHT SOURCES NOT OTHERWISE PROVIDED FOR
    • F21K9/00—Light sources using semiconductor devices as light-generating elements, e.g. using light-emitting diodes [LED] or lasers
    • F21K9/90—Methods of manufacture
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/81—Anodes
    • H10K50/813—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/822—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/85—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/1201—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/122—Pixel-defining structures or layers, e.g. banks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H10K59/131—Interconnections, e.g. wiring lines or terminals
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/221—Static displays, e.g. displaying permanent logos
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8051—Anodes
    • H10K59/80515—Anodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/805—Electrodes
    • H10K59/8052—Cathodes
    • H10K59/80521—Cathodes characterised by their shape
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/875—Arrangements for extracting light from the devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H10K50/844—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/80—Constructional details
    • H10K59/87—Passivation; Containers; Encapsulations
    • H10K59/873—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80—Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02B—CLIMATE CHANGE MITIGATION TECHNOLOGIES RELATED TO BUILDINGS, e.g. HOUSING, HOUSE APPLIANCES OR RELATED END-USER APPLICATIONS
    • Y02B20/00—Energy efficient lighting technologies, e.g. halogen lamps or gas discharge lamps
    • Y02B20/30—Semiconductor lamps, e.g. solid state lamps [SSL] light emitting diodes [LED] or organic LED [OLED]

Definitions

  • At least one embodiment of the present disclosure is directed to an organic light emitting diode illumination lamp and a method of fabricating the same.
  • OLED Organic Light-Emitting Diode
  • At least one embodiment of the present disclosure is directed to an organic light emitting diode illumination lamp and a method of fabricating the same that does not require the use of a Fine Metal Mask.
  • At least one embodiment of the present disclosure relates to a method of fabricating an organic light emitting diode illumination lamp, comprising: fabricating an array backplane, the array backplane including a first substrate and a first electrode formed on the first substrate Providing an electrostatic film on one surface of the array back plate on which the first electrode is disposed, patterning the electrostatic film to form a patterned electrostatic film, and forming an organic film layer by using the patterned electrostatic film as a mask Forming a second electrode to obtain an organic light emitting diode device; packaging the organic light emitting diode device.
  • At least one embodiment of the present disclosure relates to an organic light emitting diode illumination lamp, comprising a lamp body, the lamp body including an illumination portion, the region of the edge of the lamp body including at least one non-light-emitting region;
  • the illumination portion includes a first substrate and a plurality of organic light emitting diode devices formed on the first substrate, each of the organic light emitting diode devices including a first electrode, a second electrode, and a first electrode and a An organic film layer between the second electrodes; the organic film layer continuously extending in the illumination portion.
  • FIG. 1a is a flow chart of a method for preparing an OLED illumination lamp according to an embodiment of the present disclosure
  • FIG. 1b is a schematic diagram of a light emitting area of an OLED illumination lamp according to an embodiment of the present disclosure
  • FIG. 2a is a cross-sectional view of the array back sheet at MN of the OLED lighting sheet of FIG. 1b;
  • 2b is a schematic cross-sectional view of an array backplane including an external electrode in an OLED illumination lamp according to an embodiment of the present disclosure
  • Figure 2c is a simplified schematic view of Figure 2b;
  • 3a is a schematic top view of an electrostatic film formed in a method for fabricating an OLED illumination lamp according to an embodiment of the present disclosure
  • Figure 3b is a cross-sectional view of the corresponding external electrode of Figure 3a;
  • FIG. 4a is a schematic top view of a patterned electrostatic film formed in a method for fabricating an OLED illumination lamp according to an embodiment of the present disclosure
  • Figure 4b is a schematic cross-sectional view of the portion AB in Figure 4a;
  • FIG. 5a is a schematic top view of a film forming an organic film layer in a method for preparing an OLED illumination lamp according to an embodiment of the present disclosure (the film of the organic film layer is covered with a whole surface, and the film of the organic film layer is translucently treated);
  • Figure 5b is a schematic cross-sectional view of the CD in Figure 5a;
  • 6a is a schematic top view of removing an electrostatic film in a lap region in a method for fabricating an OLED illumination lamp according to an embodiment of the present disclosure
  • Figure 6b is a schematic cross-sectional view of the EF of Figure 6a;
  • FIG. 7a is a schematic top view of a film of a second electrode formed in a method for preparing an OLED illumination lamp according to an embodiment of the present disclosure (the entire surface of the film of the second electrode is covered, and the film of the second electrode is translucently processed) ;
  • Figure 7b is a schematic cross-sectional view of the GH in Figure 7a;
  • FIG. 8 is a top plan view showing an electrostatic film of a mask region except for an extraction electrode region and a film layer formed thereon, in the method for fabricating an OLED illumination lamp according to an embodiment of the present disclosure
  • Figure 8b is a schematic cross-sectional view of the IJ of Figure 8a;
  • Figure 8c is a schematic view of the formed organic film layer (pattern of the organic film layer);
  • Figure 8d is a schematic view of the formed second electrode (pattern of the second electrode);
  • FIG. 9 is a schematic diagram of forming a package film in a method for fabricating an OLED illumination lamp according to an embodiment of the present disclosure.
  • FIG. 10 is a schematic diagram of forming a second substrate in a method for fabricating an OLED illumination lamp according to an embodiment of the present disclosure
  • 11a is a schematic diagram of a mask region and a second region in a method for fabricating an OLED illumination lamp according to an embodiment of the present disclosure
  • FIG. 11b is a schematic diagram of a combination of a first substrate and a second substrate irradiated with a laser through a mask in a method for fabricating an OLED illumination lamp according to an embodiment of the present disclosure
  • FIG. 12 is a schematic diagram of removing a first substrate and a second substrate of a second region and a film layer therebetween in a method for fabricating an OLED illumination lamp according to an embodiment of the present disclosure
  • FIG. 13 is a schematic diagram of attaching a first water-oxygen barrier layer in a method for preparing an OLED illumination lamp according to an embodiment of the present disclosure
  • FIG. 14 is a schematic diagram of separating a first substrate and a carrier substrate carrying the first substrate in the method for fabricating an OLED illumination lamp according to an embodiment of the present disclosure
  • FIG. 15 is a schematic diagram of attaching a second water-oxygen barrier layer in a method for preparing an OLED illumination lamp according to an embodiment of the present disclosure
  • 16a is a schematic diagram of a hollow region and a second region in a method for fabricating an OLED illumination lamp according to an embodiment of the present disclosure
  • FIG. 16b is a schematic diagram of cutting a first water-oxygen barrier layer and a second water-oxygen barrier layer after the first water-oxygen barrier layer and the second water-oxygen barrier layer are attached to form a hollow region according to an embodiment of the present disclosure
  • FIG. 17 is a schematic diagram of a method for preparing a OLED illumination lamp sheet according to an embodiment of the present disclosure, after affixing a light extraction film to form a hollow region;
  • FIG. 18 is a schematic diagram of a final shape of an OLED device formed in a method for fabricating an OLED illumination lamp according to an embodiment of the present disclosure (the illumination lamp does not have a hollow structure);
  • Figure 18b is a cross-sectional view showing the KL of the OLED illumination lamp of Figure 18a;
  • FIG. 19 is a schematic diagram of a final shape of an OLED device formed in a method for fabricating an OLED illumination lamp according to an embodiment of the present disclosure (the illumination lamp has a hollow structure);
  • FIG. 20 is a schematic cross-sectional view of the OLED illumination lamp of FIG. 19 taken along the line XY (the lamp body between adjacent hollow regions or between adjacent non-light-emitting regions has one sub-pixel);
  • 21 is a schematic cross-sectional view of the OLED illumination lamp panel of FIG. 19 taken at XY (the lamp body between adjacent hollow regions or between adjacent non-light-emitting regions has two sub-pixels).
  • a Fine Metal Mask In the process of preparing an OLED illumination lamp, in the process of forming an organic film layer and a cathode, a Fine Metal Mask (FMM) is required, and the FMM is expensive, and in the preparation process, due to its own gravity
  • the sub-pixels of the corresponding FMM edge region of the OLED illumination lamp and the sub-pixels of the corresponding FMM intermediate region may be different in size, so that the brightness of the edge region and the middle region of the OLED illumination lamp are different. Not uniform.
  • At least one embodiment of the present disclosure provides a method for fabricating an OLED illumination lamp, as shown in FIG. 1a, comprising: fabricating an array back plate, the array back plate including a first substrate and a first electrode formed on the first substrate An electrostatic film is attached to one side of the array back plate provided with the first electrode, the electrostatic film is patterned to form a patterned electrostatic film, and the patterned electrostatic film is used as a mask to form an organic film layer; the second electrode is formed to obtain an OLED Device; package OLED device.
  • the method for preparing an OLED illumination lamp does not require the use of an FMM, and replaces the FMM used in the preparation process of the conventional OLED illumination lamp with an electrostatic film, thereby making the preparation of the OLED illumination lamp simpler.
  • the obtained OLED illumination lamp has uniform brightness.
  • a method of manufacturing the OLED illumination lamp sheet is described by taking the structure shown in FIG. 1b as an example, but the pattern formed by the embodiment is not limited to the pattern shown in FIG. 1b.
  • the pattern structure formed in FIG. 1b is a butterfly-shaped illumination piece, and the illumination area 011 constitutes an illumination part of the illumination piece, the illumination piece further includes a non-light-emitting area 002, and the non-light-emitting area 002 includes, for example, an edge encapsulation area.
  • the area where the user can see the brightness is the light-emitting area 011.
  • the light emitting region 011 includes a plurality of sub-pixels.
  • the method for preparing an OLED illumination lamp provided by this embodiment includes the following steps.
  • an array backplane 110 is fabricated. As shown in FIG. 2a, the array backplane includes a first substrate 101 and a first electrode 1015 formed on the first substrate 101.
  • fabricating an array backplane includes the following steps.
  • the resulting array backplate can be as shown in Figure 2a.
  • the first substrate 101 is placed on a substrate 100, which includes, for example, a glass substrate.
  • the arrangement of the impedance trace electrode 1013 can make the illumination of the illumination lamp sheet more uniform, the impedance trace electrode 1013 can be in the shape of a line type, a fold line type, etc., and the impedance trace electrode 1013 can be disposed in the sub-pixel area in which it is located, and can pass The length of the impedance trace electrode 1013 is adjusted to adjust the resistance.
  • the impedance trace electrode 1013 may not be provided, and the embodiment of the present disclosure does not limit this.
  • the first substrate 101 may include a flexible substrate, and the material thereof may include polyimide (PI).
  • the first insulating layer 1010, the second insulating layer 1012, the third insulating layer, and the pixel defining layer 1016 may include one or more of silicon nitride (SiNx), silicon oxide (SiOx), and silicon oxynitride (SiNxOy).
  • the first insulating layer 1010 can serve as a buffer layer, and the electrode traces 1011 can be made of a low-resistance metal.
  • the first electrode 1015 and the impedance trace electrode 1013 may be made of a transparent conductive material, for example, Indium Tin Oxides (ITO), or a laminated structure, for example, a laminate of a metal and a conductive metal oxide, for example, A laminate of a metal and ITO may be employed, and the metal includes at least one of gold, silver, copper, aluminum, molybdenum, and titanium. For example, in the laminate, the metal is closer to the first substrate 101 than the ITO.
  • ITO Indium Tin Oxides
  • the external electrode 1025 is further formed.
  • the external electrode 1025 includes a bonding region 10250 and an extraction electrode region 10280, and the external electrodes of the overlapping region. Arranged to overlap with the second electrode (not shown in FIGS. 2b, 2c, referring to the second electrode 104 in FIG. 9, the second electrode is electrically connected to the external electrode), and the external electrode 1025 of the extraction electrode region 10280 is configured To connect an external circuit.
  • the external electrode 1025 can be electrically connected to one end of the power source.
  • the external electrode 1025 may be formed separately or may be formed in the same layer as one or more of the above steps.
  • the first electrode 1015 includes a metal aluminum layer adjacent to the third insulating layer 1014 and is disposed on the aluminum layer. ITO, and an external electrode 1025 is formed in the same layer as the first electrode 1015, The external electrode 1025 also includes a metal aluminum layer adjacent to the third insulating layer 1014 and ITO disposed on the aluminum layer. The first electrode 1015 is not electrically connected to the external electrode 1025.
  • Figure 2b For convenience of description, the structure of Fig. 2b is simplified to Fig. 2c in the subsequent drawings. In FIG.
  • the pixel defining layer 1016 includes a first via 10161 corresponding to the lead electrode region 10280, and the pixel defining layer 1016 includes a second via 10162.
  • the second electrode is overlapped with the external electrode 1025 through the first via 10161, and the external circuit is electrically connected to the external electrode 1025 through the second via 10162.
  • the structure and material of the first electrode 1015 and the external electrode 1025 are not limited to the above description, but are merely described as an example.
  • the first electrode 1015 may be electrically connected to the external circuit through the electrode trace 1011, but is not limited thereto.
  • the electrode traces 1011 and the like may be disposed at the edge portion of the light-emitting region.
  • the array backplane may not be provided with a sub-pixel structure at a non-light-emitting region, for example, the array backplane does not form a film layer such as a first electrode at a non-light-emitting region. This can be achieved by occlusion of the mask at this point.
  • an electrostatic film 102 is attached to one surface of the array back plate on which the first electrode 1015 is disposed.
  • the electrostatic film is patterned to form a patterned electrostatic film 1020, such as
  • a film (organic film layer) 1030 of an organic film layer is formed using the patterned electrostatic film 1020 as a mask.
  • a film 1030 of an organic film layer is formed by a vapor deposition method.
  • patterning the electrostatic film includes removing the electrostatic film of the first region 1021, and retaining the electrostatic film of the mask region as shown in FIGS. 4a and 4b, and the portion of the pattern filled in FIG. 4a is the corresponding mask.
  • the first region 1021 is an effective vapor deposition region.
  • the first area 1021 is larger than the light emitting area 011.
  • the effective vapor deposition region corresponds to, for example, a region of the formed organic film layer.
  • patterning an electrostatic film includes removing a first region of the electrostatic film using a laser cutting technique.
  • a laser can be used to outline the area to be removed, and then the tape is used to paste and remove the electrostatic film to be removed.
  • the half-cut effect can be achieved by controlling the laser energy, that is, only the electrostatic film is cut, and the first substrate is not damaged. It should be noted that the removal of the electrostatic film is not limited to the method given above.
  • the electrostatic film is a non-adhesive film that does not contain a gel component. It is a self-adhesive film and relies on electrostatic adsorption. To stick the item, the adsorption is only achieved by static electricity.
  • electrostatic film materials include polyethylene terephthalate (PET), polyethylene naphthalate (PEN), polyimide (PI), polyethylene (PE), and polyvinyl chloride (PVC). At least one of, but not limited to.
  • an electrostatic film is relatively easy to remove because it is adsorbed only by static electricity.
  • forming the organic film layer and the second electrode includes: removing the overlapping region electrostatic film and the film layer thereon to expose the overlapping region 10250 of the external electrode under a protective atmosphere as shown in FIGS. 6a and 6b, as shown in FIG. 7a. 7b, forming a film 1040 of the second electrode; as shown in FIGS. 8a and 8b, removing the electrostatic film in the mask region other than the lead electrode region 10280 and the film layer formed thereon (the mask region is electrostatically removed) in the protective atmosphere.
  • the film 1040 is formed on the film with the organic film layer 1030 and the second electrode, and the organic film layer 103 and the second electrode 104 are obtained.
  • the second electrode 104 is electrically connected to the external electrode 1025, and the organic film layer is formed as shown in FIG. 8c.
  • the second electrode formed is shown in Figure 8d.
  • the mask region electrostatic film 1028 of the lead electrode region 10280 is as shown in Fig. 8b.
  • the protective atmosphere includes, for example, a nitrogen atmosphere, but is not limited thereto.
  • Fig. 8a in order to clearly show the mask region electrostatic film 1028 of the lead electrode region 10280, the film layer on the electrostatic film is transparent.
  • packaging the OLED device includes: after forming the second electrode 104, performing thin film encapsulation, and the formed encapsulation film 105 is as shown in FIG.
  • the illumination area is a butterfly shape, and the obtained illumination lamp can be referred to FIG. 1b.
  • it may further include:
  • a second substrate 106 is attached to one side of the first substrate 101 where the OLED device is disposed.
  • the OLED device may include an anode, a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer. (EIL) and cathode.
  • HIL hole injection layer
  • HTL hole transport layer
  • EML emission layer
  • ETL electron transport layer
  • EIL electron injection layer
  • cathode cathode
  • the above layers may be stacked in sequence.
  • the organic film layer 103 may include at least one of a hole injection layer (HIL), a hole transport layer (HTL), an emission layer (EML), an electron transport layer (ETL), and an electron injection layer (EIL).
  • the OLED device may not be provided with a hole injection layer (HIL), a hole transport layer (HTL), an electron transport layer (ETL), or an electron injection layer (EIL). At least one layer.
  • HIL hole injection layer
  • HTL hole transport layer
  • ETL electron transport layer
  • EIL electron injection layer
  • At least one layer is merely illustrative, and an OLED device according to an embodiment of the present disclosure may reduce some of the above layers, and may add other layers.
  • a hole blocking layer, an electron blocking layer, or the like may also be included. The embodiments of the present disclosure do not limit this.
  • the material of the organic film layer 103 can be referred to a general design, and will not be described herein.
  • the usual OLED lighting sheet is limited by the process and cannot be designed in the middle, so it is difficult to make a significant breakthrough in appearance.
  • the device structure and the preparation process proposed in this embodiment can effectively solve the problem, and provide a wider design space for the lamp shape design.
  • the OLED illumination lamp sheet prepared in this embodiment includes a hollow structure.
  • This embodiment is carried out on the basis of the first embodiment. For example, the following steps may also be included.
  • the combination of the first substrate 101 and the second substrate 106 is cut by a laser cutting technique to remove the first liner of the second region 21021.
  • the bottom substrate 101 and the second substrate 106 and the film layer between the two, the second region 21021 is located in the range of the mask region 01020, and is smaller than the mask region 01020, so that the OLED device can be packaged better, in the cutting After that, it can also have better waterproof oxygen resistance.
  • the pattern of the second region 21021 can refer to the pattern of the mask region 01020. In Fig.
  • the broken line is the boundary of the mask area 01020
  • the solid line is the boundary of the second area 21021.
  • the combination of the first substrate 101 and the second substrate 106 refers to, for example, a structure obtained by attaching the second substrate 106 on the first substrate 101.
  • the laser is irradiated through the mask 200 to illuminate the combined combination of the first substrate 101 and the second substrate 106 to be located in the second region.
  • the first substrate 101 and the second substrate 106 of 21021 and the film layer between the two are peeled off, and the peeled portion is separated from the carrier substrate 100 carrying the first substrate 101, and the obtained structure is as shown in FIG. Show.
  • the pattern of the reticle 200 can be as shown in Figure 11a.
  • the position of the mask 200 corresponding to the second region 21021 is the light transmission region 2001, and the remaining region is the opaque region 2002.
  • the structure obtained by cutting the combination of the first substrate 101 and the second substrate 106 and peeling off the portion irradiated with the laser light is as shown in FIG.
  • the first water-oxygen barrier layer 107 is attached to the second substrate 106 from which the peeled portion is removed.
  • the first water oxygen barrier layer 107 is attached over the entire surface.
  • the first substrate 101 from which the stripped portion is removed is away from the OLED device.
  • a second water oxygen barrier layer 108 is attached to one side.
  • the second water-oxygen barrier layer 108 is attached over the entire surface.
  • the combination of the first water-oxygen barrier layer 107 and the second water-oxygen barrier layer 108 is cut by a laser cutting technique to form a hollow region. 013, as shown in Figures 16a and 16b.
  • the hollowed out region 013 is located within the range of the second region 21021 and smaller than the second region 21021, so that the OLED device can be packaged better and has better water vapor barrier capability after cutting.
  • the cut portion includes a first water oxygen barrier layer 107 and a second water oxygen barrier layer 108.
  • the pattern of the hollow area 013 and the second area 21021 can be as shown in Fig. 16a.
  • Fig. 16a in the butterfly outline, the broken line is the boundary of the second area 21021, and the solid line is the boundary of the hollow area 013.
  • the resulting structure can be as shown in Figure 16b.
  • Figure 16b Also shown in Figure 16b is a light emitting region 011 and an edge package region 012.
  • the combination of the first water oxygen barrier layer 107 and the second water oxygen barrier layer 108 is, for example, a structure in which the first water oxygen barrier layer 107 and the second water oxygen barrier layer 108 are attached.
  • the arrangement of the first water oxygen barrier layer 107 and the second water oxygen barrier layer 108 can further improve the waterproof oxygen encapsulation effect, and can improve the life and durability of the illumination lamp. Moreover, when the design is hollowed out, the compatibility of the OLED life and the shape of the lamp can be achieved.
  • the method provided by the embodiment can support various complicated hollow design schemes of the flexible OLED lamp, and provides more space for the lamp shape design.
  • the OLED illumination lamp sheet prepared in this embodiment also includes a hollow structure.
  • This embodiment is performed on the basis of the second embodiment.
  • the first water oxygen barrier layer 107 and the second water oxygen barrier layer 108 after attaching the first water oxygen barrier layer 107 and the second water oxygen barrier layer 108, the first water oxygen barrier layer 107 and the second water oxygen layer are attached.
  • the light extraction film 109 is attached to at least one of the first water oxygen barrier layer 107 and the second water oxygen barrier layer 108. Therefore, after the light extraction film 109 is attached, the combination of the first water oxygen barrier layer 107, the second water oxygen barrier layer 108, and the light extraction film 109 can be cut by a laser cutting technique to form the hollow region 013.
  • the hollow region The 013 is located within the range of the second region 21021 and smaller than the second region 21021.
  • the cut portion includes a first water oxygen barrier layer 107, a second water oxygen barrier layer 108, and a light extraction film 109.
  • At least one of the first water-oxygen barrier layer 107 and the second water-oxygen barrier layer 108 of the present embodiment is attached in order to further achieve the effect of waterproofing oxygen.
  • the first water-oxygen barrier layer 107 is attached to the second substrate 106.
  • the first substrate 101 and the carrier substrate 100 carrying the first substrate 101 are separated.
  • the second water-oxygen barrier layer 108 is attached to the side of the first substrate 101 away from the OLED device.
  • the light extraction film 109 is attached to at least one of the first water oxygen barrier layer 107 and the second water oxygen barrier layer 108.
  • the non-light emitting region may include a first substrate 101, a second substrate 106, a first water oxygen barrier layer 107, a second water oxygen barrier layer 108, and a light extraction film 109.
  • the materials of the film layer given in the embodiments of the present disclosure is not limited to the enumerated cases.
  • the materials of the second substrate 106, the first water-oxygen barrier layer 107, and the second water-oxygen barrier layer 108 may include polyimide (PI), polyethylene terephthalate (PET), and polynaphthalene. Ethylene glycol dicarboxylate (PEN) and the like.
  • the encapsulating film 105 may include at least one of an organic encapsulating film and an inorganic encapsulating film, for example, an encapsulation of an inorganic encapsulating film and then encapsulation of an organic encapsulating film, but is not limited thereto.
  • the inorganic encapsulating film may include a silicon nitride film, and the organic encapsulating film may include hexamethyldisiloxane (HMDSO), but is not limited thereto.
  • the light extraction film 109 can be referred to a general design.
  • the first electrode is an anode and the second electrode is a cathode, but is not limited thereto.
  • a sub-pixel is included in the cross-sectional line as an example.
  • a plurality of sub-pixels may be included in the cross-sectional line, which is not limited by the embodiment of the present disclosure.
  • the cutting in the embodiment of the present disclosure may employ laser cutting, but is not limited thereto.
  • forming a film means, for example, a film forming a whole surface, which can be used as The patterned film is patterned to obtain the desired pattern.
  • a vapor deposition method, a magnetron sputtering method, or the like can be used to form the film.
  • the encapsulation film 105, the second substrate 106, the first water-oxygen barrier layer 107, and the second water-oxygen barrier layer 108 may be attached over the entire surface. That is, the encapsulating film 105, the second substrate 106, the first water oxygen barrier layer 107, and the second water oxygen barrier layer 108 are planar films.
  • the embodiment provides an organic light emitting diode illumination lamp, as shown in FIGS. 18a and 18b, including a lamp body 10, the lamp body includes an illumination portion 0011, and at least one non-light-emitting region is included in an area surrounded by the edge of the lamp body. 002.
  • the illumination unit 0011 includes a first substrate 101 and a plurality of organic light emitting diode devices 111 (shown in FIG. 8b) formed on the first substrate 101.
  • Each of the organic light emitting diode devices 111 includes a first electrode 1015 and a second electrode 104. And an organic film layer 103 disposed between the first electrode 1015 and the second electrode 104; the organic film layer 103 continuously extends in the illumination portion.
  • the non-light emitting region 002 includes an edge package region 012, and further includes a third region 031.
  • the third region 031 does not have a pixel structure and does not emit light.
  • Embodiment 18b may correspond to the illumination lamp formed in Embodiment 1, and the illumination lamp formed in Embodiment 4 and Embodiment 5 may also be as shown in FIG. 18a.
  • the first electrode 1015 of each of the organic light emitting diode devices is independently disposed in the associated organic light emitting diode device, and the second electrode 104 extends continuously in the illumination portion. That is, the first electrodes 1015 are separated. A plurality of independent first electrodes 1015 are disposed on the first substrate. For example, each of the sub-pixels 01 is provided with a first electrode 1015.
  • a plurality of organic light emitting diode devices are packaged through the package film 105, and a second substrate 106 is disposed on a side of the package film 105 away from the first substrate 101.
  • a first water-oxygen barrier layer 107 may be disposed on a side of the second substrate 106 away from the package film 105, and a second water-oxygen barrier layer 108 may be disposed on a side of the first substrate 101 away from the second substrate 106.
  • the organic light emitting diode illumination lamp provided in this embodiment can be formed by the method of Embodiment 1, Embodiment 4 or Embodiment 5.
  • the illumination section 0011 can correspond to the illumination area 011 in the previous description.
  • the organic light emitting diode illumination lamp of the present embodiment includes a hollow structure.
  • the non-light-emitting region 002 includes a hollow region 013 and an edge encapsulation region 012, and a first water-oxygen barrier layer 107 and a second water at a position of the lamp main body near the hollow region 013 and an edge position of the lamp main body.
  • the oxygen barrier layer 108 is attached together.
  • FIG. 19 and 20 show a schematic cross-sectional view at KL in Fig. 18b
  • Fig. 20 shows a case where one sub-pixel 01 is set at KL
  • Fig. 21 shows a case where two sub-pixels 01 are arranged at KL. It should be noted that FIG. 20 and FIG. 21 are only for the convenience of description, and more sub-pixels may be disposed at the KL, which is not limited by the embodiment of the present disclosure.
  • the illumination lamp of the third embodiment can also be referred to FIG.
  • a part of the non-light-emitting region of Embodiment 6 may be removed, thereby obtaining a lighting sheet of a hollow structure.
  • the third region 031 can be removed, so that the illumination light sheet of the hollow structure can be obtained.

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Abstract

提供一种有机发光二极管照明灯片及其制备方法。该有机发光二极管照明灯片的制备方法包括：制作阵列背板(110)，所述阵列背板(110)包括第一衬底(101)以及形成在所述第一衬底(101)上的第一电极(1015)；在所述阵列背板(110)设置有所述第一电极(1015)的一面贴附静电膜(102)，对所述静电膜(102)进行构图形成图案化的静电膜(1020)，以所述图案化的静电膜(1020)为掩膜形成有机膜层(103)；形成第二电极(104)，得到有机发光二极管器件(111)；对所述有机发光二极管器件(111)进行封装，得到有机发光二极管照明灯片。该OLED制备过程不需要使用精细金属掩膜。

Description

有机发光二极管照明灯片及其制备方法 技术领域
本公开至少一实施例涉及一种有机发光二极管照明灯片及其制备方法。
背景技术
随着有机发光二极管(Organic Light-Emitting Diode，OLED)技术的成熟，OLED照明也逐渐走向市场。近年来的研究表明，OLED照明具有灯具能效高、光线柔和、分布均匀、显色指数高、健康无辐射、可支持柔性应用等无以取代的优点。
发明内容
本公开的至少一实施例涉及一种有机发光二极管照明灯片及其制备方法，该OLED制备过程不需要使用精细金属掩膜(Fine Metal Mask)。
本公开至少一实施例涉及一种有机发光二极管照明灯片的制备方法，包括：制作阵列背板，所述阵列背板包括第一衬底以及形成在所述第一衬底上的第一电极；在所述阵列背板设置有所述第一电极的一面贴附静电膜，对所述静电膜进行构图形成图案化的静电膜，以所述图案化的静电膜为掩膜形成有机膜层；形成第二电极，得到有机发光二极管器件；对所述有机发光二极管器件进行封装。
本公开至少一实施例涉及一种有机发光二极管照明灯片，包括灯片主体，所述灯片主体包括照明部，所述灯片主体的边缘围绕的区域内包括至少一个不发光区域；所述照明部包括第一衬底以及形成在所述第一衬底上的多个有机发光二极管器件，各所述有机发光二极管器件包括第一电极、第二电极以及设置在所述第一电极和所述第二电极之间的有机膜层；所述有机膜层在所述照明部连续延伸。
附图说明
为了更清楚地说明本公开实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本公开的一些实施例， 而非对本公开的限制。
图1a为本公开一实施例提供的OLED照明灯片制备方法流程图；
图1b为本公开一实施例提供的OLED照明灯片发光区域示意图；
图2a为图1b的OLED照明灯片的MN处的阵列背板的剖面示意图；
图2b为本公开一实施例提供的OLED照明灯片中包括外接电极的阵列背板的剖面示意图；
图2c为图2b的简化示意图；
图3a为本公开一实施例提供的OLED照明灯片制备方法中形成的静电膜的俯视示意图；
图3b为图3a中对应外接电极处的剖视示意图；
图4a为本公开一实施例提供的OLED照明灯片制备方法中形成的图案化的静电膜的俯视示意图；
图4b为图4a中AB处的剖视示意图；
图5a为本公开一实施例提供的OLED照明灯片制备方法中形成有机膜层的薄膜的俯视示意图(有机膜层的薄膜整面覆盖，并对有机膜层的薄膜做了半透明处理)；
图5b为图5a中CD处的剖视示意图；
图6a为本公开一实施例提供的OLED照明灯片制备方法中去除搭接区静电膜的俯视示意图；
图6b为图6a中EF处的剖视示意图；
图7a为本公开一实施例提供的OLED照明灯片制备方法中形成的第二电极的薄膜的俯视示意图(第二电极的薄膜整面覆盖，并对第二电极的薄膜做了半透明处理)；
图7b为图7a中GH处的剖视示意图；
图8a为本公开一实施例提供的OLED照明灯片制备方法中去掉除引出电极区外的掩膜区静电膜以及形成在其上的膜层的俯视示意图；
图8b为图8a中IJ处的剖视示意图；
图8c为形成的有机膜层(有机膜层的图形)的示意图；
图8d为形成的第二电极(第二电极的图形)的示意图；
图9为本公开一实施例提供的OLED照明灯片制备方法中形成封装薄膜 的示意图；
图10为本公开一实施例提供的OLED照明灯片制备方法中形成第二衬底的示意图；
图11a为本公开一实施例提供的OLED照明灯片制备方法中掩膜区和第二区域的示意图；
图11b为本公开一实施例提供的OLED照明灯片制备方法中利用激光经掩膜版照射第一衬底和第二衬底的组合的示意图；
图12为本公开一实施例提供的OLED照明灯片制备方法中去除第二区域的第一衬底和第二衬底以及位于两者之间的膜层的示意图；
图13为本公开一实施例提供的OLED照明灯片制备方法中贴附第一水氧阻隔层的示意图；
图14为本公开一实施例提供的OLED照明灯片制备方法中将第一衬底和承载第一衬底的承载基板分离的示意图；
图15为本公开一实施例提供的OLED照明灯片制备方法中贴附第二水氧阻隔层的示意图；
图16a为本公开一实施例提供的OLED照明灯片制备方法中镂空区和第二区域的示意图；
图16b为本公开一实施例提供的OLED照明灯片制备方法中贴附第一水氧阻隔层和第二水氧阻隔层后进行切割，以形成镂空区域的示意图；
图17为本公开一实施例提供的OLED照明灯片制备方法中贴附光取出膜后进行切割，以形成镂空区域的示意图；
图18a为本公开一实施例提供的OLED照明灯片制备方法中形成的OLED器件的最终造型的示意图(照明灯片不具有镂空结构)；
图18b为图18a提供的OLED照明灯片的KL处剖视示意图；
图19为本公开一实施例提供的OLED照明灯片制备方法中形成的OLED器件的最终造型的示意图(照明灯片具有镂空结构)；
图20为图19提供的OLED照明灯片的XY处剖视示意图(相邻镂空区域之间或相邻不发光区域之间的灯片主体具有一个子像素)；
图21为图19提供的OLED照明灯片的XY处剖视示意图(相邻镂空区域之间或相邻不发光区域之间的灯片主体具有两个子像素)。
附图标记：
100-承载基板；101-第一衬底；1015-第一电极；1010-第一绝缘层；1011-电极走线；1012-第二绝缘层；1013-阻抗走线电极；1014-第三绝缘层；1016-像素定义层；10160-像素限定区域；10250-搭接区；1025-外接电极；102-静电膜；1020-图案化的静电膜；1021-第一区域；103-有机膜层；1030-有机膜层的薄膜；104-第二电极；1040-第二电极的薄膜；01020-掩膜区；10280-引出电极区；1028-引出电极区的掩膜区静电膜；105-封装薄膜；106-第二衬底；107-第一水氧阻隔层；108-第二水氧阻隔层；109-光取出膜；21021-第二区域；200-掩膜版；2001-掩膜版的光透过区域；2002-掩膜版的不透光区域；011-发光区域；012-边缘封装区域；013-镂空区域；10-灯片主体；01-子像素；0011-照明部；002-不发光区域；031-第三区域；110-阵列背板；111-有机发光二极管器件。
具体实施方式
为使本公开实施例的目的、技术方案和优点更加清楚，下面将结合本公开实施例的附图，对本公开实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本公开的一部分实施例，而不是全部的实施例。基于所描述的本公开的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本公开保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本公开所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”、“一”或者“该”等类似词语也不表示数量限制，而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
通常的OLED照明灯片制备过程中，形成有机膜层以及阴极的过程中，需要使用精细金属掩膜(Fine Metal Mask，FMM)，而FMM价格昂贵，并且在制备过程中，因其自身重力作用，可能会导致制得的OLED照明灯片的对应FMM边缘区域的子像素与对应FMM中间区域的子像素的大小不一，从而使得OLED照明灯片边缘区域与中间区域的发光亮度不一，发光不均匀。
本公开至少一实施例提供一种OLED照明灯片的制备方法，如图1a所示，包括：制作阵列背板，阵列背板包括第一衬底以及形成在第一衬底上的第一电极；在阵列背板设置有第一电极的一面贴附静电膜，对静电膜进行构图形成图案化的静电膜，以图案化的静电膜为掩膜形成有机膜层；形成第二电极，得到OLED器件；对OLED器件进行封装。
本公开至少一实施例提供的OLED照明灯片的制备方法，OLED制备过程不需要使用FMM，以静电膜代替通常的OLED照明灯片制备过程中使用的FMM，使得OLED照明灯片制备更加简单，制得的OLED照明灯片发光亮度均一。
实施例1
本实施例以形成图1b所示的结构为例进行说明OLED照明灯片的制备方法，但本实施例形成的图形不限于图1b示出的图形。图1b中形成的图形结构为一蝴蝶状的照明灯片，发光区域011构成照明灯片的照明部，照明灯片还包括不发光区域002，不发光区域002例如包括边缘封装区。用户可看到亮度的区域为发光区域011。例如，发光区域011包括多个子像素。
本实施例提供的OLED照明灯片的制备方法，包括如下步骤。
S1、制作阵列背板110，如图2a所示，阵列背板包括第一衬底101以及形成在第一衬底101上的第一电极1015。
例如，制作阵列背板包括如下步骤。形成的阵列背板可如图2a所示。
S101、在第一衬底101上形成第一绝缘层1010。第一衬底101置于基板100上，基板100例如包括玻璃基板。
S102、在第一绝缘层1010上形成电极走线1011的图形。
S103、在电极走线1011的图形上形成第二绝缘层1012，对第二绝缘层1012进行构图形成第二绝缘层过孔。
S104、在构图后的第二绝缘层上形成阻抗走线电极1013的图形，阻抗 走线电极1013经第二绝缘层过孔与电极走线1011电连接。
阻抗走线电极1013的设置可以使得照明灯片的发光更加均匀，阻抗走线电极1013可为线型、折线型等形状，阻抗走线电极1013可设置在其所在的子像素区域内，可通过调节阻抗走线电极1013的长度来调节电阻。亦可不设置阻抗走线电极1013，本公开的实施例对此不作限定。
S105、在阻抗走线电极1013的图形上形成第三绝缘层1014，对第三绝缘层1014进行构图形成第三绝缘层过孔。
S106、在构图后的第三绝缘层上形成第一电极1015的图形，第一电极1015经第三绝缘层过孔与阻抗走线电极1013电连接。
S107、在第一电极1015的图形上形成像素定义层1016以形成像素限定区域10160的图形。
下面例举几种各层适合的材质，需要说明的是，本公开实施例各层的材质并不限于列举的材料。第一衬底101可包括柔性衬底，其材质可包括聚酰亚胺(polyimide，PI)。第一绝缘层1010、第二绝缘层1012、第三绝缘层和像素定义层1016材质可包括氮化硅(SiNx)，氧化硅(SiOx)，氮氧化硅(SiNxOy)中的一种或多种。第一绝缘层1010可作为缓冲层，电极走线1011可采用低电阻材质的金属，例如，可采用金、银、铜、铝、钼、钛中的至少一种。第一电极1015和阻抗走线电极1013可采用透明导电材料，例如可采用氧化铟锡(Indium Tin Oxides，ITO)，亦可采用叠层结构，例如采用金属与导电金属氧化物的叠层，例如可采用金属和ITO的叠层，金属包括金、银、铜、铝、钼、钛中的至少一种。例如，在叠层中，金属比ITO更靠近第一衬底101。
例如，如图2b所示，在制作阵列背板的过程中，还包括形成外接电极1025，如图2c所示，外接电极1025包括搭接区10250和引出电极区10280，搭接区的外接电极被配置来与第二电极搭接(图2b、2c中未示出，可参照图9中的第二电极104，第二电极与外接电极电连接)，引出电极区10280的外接电极1025被配置来连接外接电路。例如，外接电极1025可与电源的一端电连接。外接电极1025可单独形成，也可采用与上述步骤中的一层或多层同层形成，一些示例中，第一电极1015包括靠近第三绝缘层1014的金属铝层以及设置在铝层上的ITO，并且与第一电极1015同层形成有外接电极1025， 外接电极1025也包括靠近第三绝缘层1014的金属铝层以及设置在铝层上的ITO。第一电极1015不与外接电极1025电连接。形成的结构如图2b所示。为了方便描述，后续附图中，图2b的结构简化为图2c。图2c中，对应搭接区10250，像素定义层1016包括第一过孔10161，对应引出电极区10280，像素定义层1016包括第二过孔10162。第二电极通过第一过孔10161与外接电极1025搭接，外接电路通过第二过孔10162与外接电极1025电连接。当然，第一电极1015和外接电极1025的结构以及材质不限于上述描述，只是以此为例进行说明。对于第一电极，例如，第一电极1015可通过电极走线1011与外接电路电连接，但不限于此。
需要说明的是，本公开的实施例以图2a所示的阵列背板为例进行说明，但阵列背板并不限于图2a示出的结构。
例如，阵列背板形成步骤中，为避免开口率的降低，可使得电极走线1011等设置在发光区域的边缘部位。但本公开的实施例不限于此。本公开的实施例中，阵列背板在不发光区域处可不设置子像素结构，例如，阵列背板在不发光区域处不形成第一电极等膜层。通过掩膜版在该处的遮挡即可实现。
S2、如图3a、3b所示，在阵列背板设置有第一电极1015的一面贴附静电膜102，如图4a、4b所示，对静电膜进行构图形成图案化的静电膜1020，如图5a、5b所示，以图案化的静电膜1020为掩膜形成有机膜层的薄膜(有机薄膜层)1030。
例如，采用蒸镀法形成有机膜层的薄膜1030。例如，如图4a所示，对静电膜进行构图包括去除第一区域1021的静电膜，保留掩膜区如图4a、4b所示，的静电膜，图4a中填充图案的部分即对应掩膜区01020，第一区域1021为有效蒸镀区域。例如，第一区域1021大于发光区域011。有效蒸镀区域例如对应形成的有机膜层的区域。
例如，对静电膜进行构图包括采用激光切割技术去除第一区域静电膜。例如，可使用激光勾勒出需去除区域的轮廓，再利用胶带粘贴并去除需去除区域的静电膜。对静电膜进行构图时，可通过控制激光能量以实现半切效果，即只切割静电膜，不伤及第一衬底。需要说明的是，静电膜的去除不限于上述给出的方法。
静电膜是一种不涂胶膜，不含有胶材成分，是一种自粘膜，靠静电吸附 来粘着物品，仅靠静电实现吸附。例如，静电膜材质包括聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚酰亚胺(PI)、聚乙烯(PE)、聚氯乙烯(PVC)中的至少一个，但不限于此。例如，静电膜因其仅靠静电实现吸附，比较容易去除。
S3、形成有机膜层以及第二电极，得到OLED器件；
例如，形成有机膜层以及第二电极包括：如图6a、6b所示，在保护气氛下去除搭接区静电膜以及其上的膜层以露出外接电极的搭接区10250，如图7a、7b所示，形成第二电极的薄膜1040；如图8a、8b所示，在保护气氛下去掉除引出电极区10280外的掩膜区静电膜以及形成在其上的膜层(掩膜区静电膜上形成有有机薄膜层1030和第二电极的薄膜1040)，得到有机膜层103和第二电极104，第二电极104与外接电极1025电连接，形成的有机膜层如图8c所示，形成的第二电极如图8d所示。引出电极区10280的掩膜区静电膜1028如图8b所示。保护气氛例如包括氮气气氛，但不限于此。图8a中，为了清楚的显示引出电极区10280的掩膜区静电膜1028，静电膜之上的膜层透明化处理。
S4、对OLED器件进行封装。
例如，对OLED器件进行封装包括：形成第二电极104后，进行薄膜封装，形成的封装薄膜105如图9所示。
从而，得到了OLED照明灯片。得到的照明灯片中，发光区域为一蝴蝶形状，得到的照明灯片可参考图1b。
例如，为了更好的起到防水氧的效果，进行薄膜封装后，还可包括：
S5、如图10所示，在第一衬底101设置OLED器件的一侧贴附第二衬底106。
需要说明的是，本公开的实施例中，OLED器件可包括阳极、空穴注入层(HIL)、空穴传输层(HTL)、发光层(EML)、电子传输层(ETL)、电子注入层(EIL)和阴极。例如，上述各层可依次叠层设置。从而，有机膜层103可包括空穴注入层(HIL)、空穴传输层(HTL)、发光层(EML)、电子传输层(ETL)、电子注入层(EIL)中的至少一种。需要说明的是，在另一实施例提供的OLED器件中，也可不设置空穴注入层(HIL)、空穴传输层(HTL)、电子传输层(ETL)、电子注入层(EIL)中的至少一层。此 外，上述层叠结构仅仅为示意性的，根据本公开实施例的OLED器件可以减少上述层中的某些层，也可以增加其他的层。例如，还可以包括空穴阻挡层、电子阻挡层等。本公开的实施例对此不作限定。有机膜层103的材质可参照通常设计，在此不再赘述。
实施例2
通常的OLED照明灯片，受制程限制，无法实现中间镂空的设计，因此在外观造型上难有显著突破。本实施例提出的器件结构和制备工艺可有效解决该问题，为灯片造型设计提供了更为宽广的设计空间。
本实施例制备的OLED照明灯片包括镂空结构。
本实施例在实施例1的基础上进行。例如，还可以包括如下步骤。
S6、如图11a、11b所示，贴附第二衬底106后，利用激光切割技术对第一衬底101和第二衬底106的组合进行切割，以去除第二区域21021的第一衬底101和第二衬底106以及位于两者之间的膜层，第二区域21021位于掩膜区01020的范围内，并且小于掩膜区01020，从而可使得OLED器件封装的更好，在切割后也能有较好的防水氧能力。第二区域21021的图形可参照掩膜区01020的图形。图11a中，蝴蝶轮廓中，虚线为掩膜区01020的边界，实线为第二区域21021的边界。第一衬底101和第二衬底106的组合例如是指在第一衬底101上贴附第二衬底106后得到的结构。
S7、对第一衬底101和第二衬底106的组合进行切割后，使激光经过掩膜版200照射切割后的第一衬底101和第二衬底106的组合，使位于第二区域21021的第一衬底101和第二衬底106以及位于两者之间的膜层被剥离，将被剥离的部分与承载第一衬底101的承载基板100分离，得到的结构如图12所示。掩膜版200的图形可如图11a所示。如图11a、11b所示，掩膜版200对应于第二区域21021的位置为光透过区域2001，其余区域为不透光区域2002。对第一衬底101和第二衬底106的组合进行切割并剥离被激光照射部分后得到的结构如图12所示。
S8、将被剥离的部分与承载第一衬底101的承载基板100分离后，如图13所示，在去除了被剥离部分的第二衬底106上贴附第一水氧阻隔层107。例如，第一水氧阻隔层107整面贴附。
S9、利用激光照射承载第一衬底101的承载基板100，将第一衬底101 与承载第一衬底101的承载基板100完全分离。分离后的结构如图14所示。
S10、去除了被剥离部分的第一衬底101与承载第一衬底101的承载基板100完全分离后，如图15所示，在去除了被剥离部分的第一衬底101远离OLED器件的一面贴附第二水氧阻隔层108。例如，第二水氧阻隔层108整面贴附。
S11、贴附第一水氧阻隔层107和第二水氧阻隔层108后，利用激光切割技术对第一水氧阻隔层107和第二水氧阻隔层108的组合进行切割，以形成镂空区域013，如图16a和图16b所示。如图16a所示，镂空区域013位于第二区域21021的范围内并且小于第二区域21021，从而可使得OLED器件封装的更好，在切割后也能有较好的防水氧能力。例如，被切割掉的部分(镂空区域)包括第一水氧阻隔层107和第二水氧阻隔层108。镂空区域013与第二区域21021的图形可如图16a所示。图16a中，蝴蝶轮廓中，虚线为第二区域21021的边界，实线为镂空区域013的边界。得到的结构可如图16b所示。图16b中还示出了发光区域011和边缘封装区域012。第一水氧阻隔层107和第二水氧阻隔层108的组合例如是指贴附第一水氧阻隔层107和第二水氧阻隔层108后的结构。
本实施例提供的方法中，第一水氧阻隔层107和第二水氧阻隔层108的设置，可以进一步提高防水氧封装效果，可以提高照明灯片的寿命和耐久性。并且，镂空设计时，可以实现OLED寿命以及灯片造型二者的兼容。
本实施例提供的方法可以支持柔性OLED灯片各种复杂的镂空设计方案，为灯片造型设计提供更大空间。
实施例3
本实施例制备的OLED照明灯片也包括镂空结构。
本实施例在实施例2的基础上进行。例如，如图17所示，为了提高光取出效率，本实施例在贴附第一水氧阻隔层107和第二水氧阻隔层108后，对第一水氧阻隔层107和第二水氧阻隔层108的组合进行切割前，还包括在第一水氧阻隔层107和第二水氧阻隔层108至少之一上贴附光取出膜109。从而，贴附光取出膜109后，可利用激光切割技术对第一水氧阻隔层107、第二水氧阻隔层108和光取出膜109的组合进行切割以形成镂空区域013，同样的，镂空区域013位于第二区域21021的范围内并且小于第二区域21021。 例如，被切割掉的部分(镂空区域)包括第一水氧阻隔层107、第二水氧阻隔层108和光取出膜109。
实施例4
在实施例1的基础上，为了进一步起到防水氧的效果，本实施例进行了的第一水氧阻隔层107和第二水氧阻隔层108至少之一的贴附。
例如，贴附第二衬底106后，在第二衬底106上贴附第一水氧阻隔层107。
例如，贴附第一水氧阻隔层107后，将第一衬底101和承载第一衬底101的承载基板100分离。
例如，分离第一衬底101和承载第一衬底101的承载基板100后，在第一衬底101远离OLED器件的一面贴附第二水氧阻隔层108。
实施例5
在实施例4的基础上，为了提高光取出效率，还包括在第一水氧阻隔层107和第二水氧阻隔层108至少之一上贴附光取出膜109。
本实施例中，不发光区域可包括第一衬底101、第二衬底106、第一水氧阻隔层107、第二水氧阻隔层108和光取出膜109。
以下列举几种膜层的材质，需要说明的是，本公开的实施例给出的膜层的材质不限于列举的情形。例如，第二衬底106、第一水氧阻隔层107以及第二水氧阻隔层108的材质可包括聚酰亚胺(PI)、聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)等。封装薄膜105可包括有机封装薄膜和无机封装薄膜的至少一种，例如可以一层无机封装薄膜封装后再进行一层有机封装薄膜的封装，但不限于此。无机封装薄膜可包括氮化硅膜，有机封装薄膜可包括六甲基二硅氧烷(HMDSO)，但不限于此。有关光取出膜109可参照通常设计。
例如，上述实施例中，第一电极为阳极，第二电极为阴极，但不限于此。
本公开的以上实施例中以剖面线处包括一个子像素为例进行说明，但本公开的实施例中，剖面线处亦可包括多个子像素，本公开的实施例对此不作限定。
本公开的实施例中切割可以采用激光切割，但不限于此。例如，还可以采用机械切割的方式进行切割。
例如，本公开的实施例中，形成薄膜例如是指形成整面的薄膜，可作为 待图形化的薄膜进行图形化，进而得到所需的图形。例如，形成薄膜可采用蒸镀法，磁控溅射法等。
例如，本公开的实施例中，封装薄膜105、第二衬底106、第一水氧阻隔层107和第二水氧阻隔层108可以整面贴附。即，封装薄膜105、第二衬底106、第一水氧阻隔层107和第二水氧阻隔层108为面状的薄膜。
实施例6
本实施例提供一种有机发光二极管照明灯片，如图18a、18b所示，包括灯片主体10，灯片主体包括照明部0011，灯片主体的边缘围绕的区域内包括至少一个不发光区域002。
照明部0011包括第一衬底101以及形成在第一衬底101上的多个有机发光二极管器件111(如图8b所示)，各有机发光二极管器件111包括第一电极1015、第二电极104以及设置在第一电极1015和第二电极104之间的有机膜层103；有机膜层103在照明部连续延伸。
如图18b所示，不发光区域002包括边缘封装区域012，还包括第三区域031。例如，第三区域031不设置像素结构，不发光。
图18b可对应实施例1形成的照明灯片，实施例4和实施例5形成的照明灯片也可如图18a所示。
例如，各有机发光二极管器件的第一电极1015独立设置在其所属的有机发光二极管器件中，第二电极104在照明部连续延伸。即，第一电极1015分立。第一衬底上设置多个独立的第一电极1015。例如，每个子像素01设置一个第一电极1015。
例如，多个有机发光二极管器件经封装薄膜105封装，并在封装薄膜105远离第一衬底101的一面设置第二衬底106。
例如，还可在第二衬底106远离封装薄膜105的一面设置第一水氧阻隔层107，在第一衬底101远离第二衬底106的一面设置第二水氧阻隔层108。
本实施例提供的有机发光二极管照明灯片，可采用实施例1、实施例4或实施例5的方法形成。例如照明部0011可与之前描述中的发光区域011对应。
实施例7
如图19所示，本实施例的有机发光二极管照明灯片包括镂空结构。例如， 如图20所示，不发光区域002包括镂空区域013和边缘封装区域012，在灯片主体靠近镂空区域013位置处和灯片主体的边缘位置处，第一水氧阻隔层107和第二水氧阻隔层108贴附在一起。
图19和图20示出了图18b中KL处的剖视示意图，图20示出了KL处设置一个子像素01的情形，图21示出了KL处设置两个子像素01的情形。需要说明的是，图20和图21只是为了描述方便给出的图示，KL处也可以设置更多个子像素，本公开的实施例对此不作限定。
图19和图20可对应实施例2制备的照明灯片。实施例3的照明灯片也可参照图18。
例如，也可将实施例6的不发光区域去除一部分，从而得到镂空结构的照明灯片。例如，图18b对应的结构中，可去除第三区域031，从而可得到镂空结构的照明灯片。
有以下几点需要说明：
(1)除非另作定义，本公开实施例以及附图中，同一附图标记代表同一含义。
(2)本公开实施例附图中，只涉及到与本公开实施例涉及到的结构，其他结构可参考通常设计。
(3)为了清晰起见，在用于描述本公开的实施例的附图中，层或区域的厚度被放大。可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
(4)在不冲突的情况下，本公开的同一实施例及不同实施例中的特征可以相互组合。
以上所述，仅为本公开的具体实施方式，但本公开的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本公开揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本公开的保护范围之内。因此，本公开的保护范围应以所述权利要求的保护范围为准。
本专利申请要求于2016年8月9日递交的中国专利申请第201610647462.1号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (19)

  1. 一种有机发光二极管照明灯片的制备方法，包括：
    制作阵列背板，所述阵列背板包括第一衬底以及形成在所述第一衬底上的第一电极；
    在所述阵列背板设置有所述第一电极的一面贴附静电膜，对所述静电膜进行构图形成图案化的静电膜，以所述图案化的静电膜为掩膜形成有机膜层；
    形成第二电极，得到有机发光二极管器件；
    对所述有机发光二极管器件进行封装。
  2. 根据权利要求1所述的有机发光二极管照明灯片的制备方法，其中，采用蒸镀法形成所述有机膜层的薄膜，对所述静电膜进行构图包括去除第一区域的静电膜，保留掩膜区的静电膜，所述第一区域为有效蒸镀区域。
  3. 根据权利要求1或2所述的有机发光二极管照明灯片的制备方法，其中，对所述静电膜进行构图包括采用激光切割技术去除所述第一区域的静电膜。
  4. 根据权利要求2所述的有机发光二极管照明灯片的制备方法，其中，
    所述阵列背板还包括形成在所述第一衬底上的外接电极，所述外接电极包括搭接区和引出电极区；
    形成所述有机膜层和所述第二电极包括：在保护气氛下去除所述搭接区的静电膜以及形成在其上的膜层，形成第二电极的薄膜；并在保护气氛下去掉除所述引出电极区外的掩膜区静电膜以及形成在其上的膜层，得到有机膜层和第二电极；所述第二电极与所述外接电极电连接。
  5. 根据权利要求4所述的有机发光二极管照明灯片的制备方法，其中，对所述有机发光二极管器件进行封装包括：形成所述有机膜层和所述第二电极后，进行薄膜封装。
  6. 根据权利要求5所述的有机发光二极管照明灯片的制备方法，其中，进行所述薄膜封装后，在所述第一衬底设置有机发光二极管器件的一侧贴附第二衬底。
  7. 根据权利要求6所述的有机发光二极管照明灯片的制备方法，其中，贴附所述第二衬底后，在所述第二衬底上贴附第一水氧阻隔层；
    贴附所述第一水氧阻隔层后，将所述第一衬底和承载所述第一衬底的承载基板分离；
    分离所述第一衬底和所述承载基板后，在所述第一衬底远离所述有机发光二极管器件的一面贴附第二水氧阻隔层。
  8. 根据权利要求7所述的有机发光二极管照明灯片的制备方法，还包括在所述第一水氧阻隔层和所述第二水氧阻隔层至少之一上贴附光取出膜。
  9. 根据权利要求6所述的有机发光二极管照明灯片的制备方法，其中，贴附所述第二衬底后，对所述第一衬底和所述第二衬底的组合进行切割，并去除第二区域的所述第一衬底和所述第二衬底以及位于两者之间的膜层，所述第二区域位于所述掩膜区的范围内并且小于所述掩膜区。
  10. 根据权利要求9所述的有机发光二极管照明灯片的制备方法，其中，去除第二区域的所述第一衬底和所述第二衬底以及位于两者之间的膜层包括：使激光经过掩膜版照射切割后的所述第二区域的所述第一衬底和所述第二衬底的组合，使位于所述第二区域的所述第一衬底和所述第二衬底以及位于两者之间的膜层被剥离，将被剥离部分与承载所述第一衬底的承载基板分离。
  11. 根据权利要求10所述的有机发光二极管照明灯片的制备方法，其中，
    将所述被剥离的部分与所述承载基板分离后，在去除了所述被剥离部分的所述第二衬底上贴附第一水氧阻隔层；
    利用激光照射所述承载基板，将所述第一衬底与所述承载基板完全分离；
    去除了所述被剥离部分的所述第一衬底与所述承载基板完全分离后，在去除了所述被剥离部分的所述第一衬底远离所述有机发光二极管器件的一面贴附第二水氧阻隔层。
  12. 根据权利要求11所述的有机发光二极管照明灯片的制备方法，其中，贴附所述第一水氧阻隔层和所述第二水氧阻隔层后，对所述第一水氧阻隔层和所述第二水氧阻隔层的组合进行切割以形成镂空区域，所述镂空区域位于所述第二区域的范围内并且小于所述第二区域。
  13. 根据权利要求12所述的有机发光二极管照明灯片的制备方法，贴附所述第一水氧阻隔层和所述第二水氧阻隔层后，进行切割前，还包括在所述第一水氧阻隔层和所述第二水氧阻隔层至少之一上贴附光取出膜。
  14. 根据权利要求1-13任一项所述的有机发光二极管照明灯片的制备方法，其中，所述静电膜的材料包括聚对苯二甲酸乙二醇酯(PET)、聚萘二甲酸乙二醇酯(PEN)、聚酰亚胺(PI)、聚乙烯(PE)、聚氯乙烯(PVC)中的至少一个。
  15. 根据权利要求1-13任一项所述的有机发光二极管照明灯片的制备方法，其中，制作阵列背板包括：
    在所述第一衬底上形成第一绝缘层；
    在所述第一绝缘层上形成电极走线的图形；
    在所述电极走线的图形上形成第二绝缘层，对所述第二绝缘层进行构图形成第二绝缘层过孔；
    在构图后的所述第二绝缘层上形成阻抗走线电极的图形，所述阻抗走线电极经所述第二绝缘层过孔与所述电极走线电连接；
    在所述阻抗走线电极的图形上形成第三绝缘层，对所述第三绝缘层进行构图形成第三绝缘层过孔；
    在构图后的所述第三绝缘层上形成所述第一电极的图形，所述第一电极经所述第三绝缘层过孔与所述阻抗走线电极电连接；
    在所述第一电极的图形上形成像素定义层以形成像素限定区域的图形。
  16. 一种有机发光二极管照明灯片，包括灯片主体，所述灯片主体包括照明部，所述灯片主体的边缘围绕的区域内包括至少一个不发光区域；
    所述照明部包括第一衬底以及形成在所述第一衬底上的多个有机发光二极管器件，各所述有机发光二极管器件包括第一电极、第二电极以及设置在所述第一电极和所述第二电极之间的有机膜层；所述有机膜层在所述照明部连续延伸。
  17. 根据权利要求16所述的有机发光二极管照明灯片，其中，各所述有机发光二极管器件的第一电极独立设置在其所属的有机发光二极管器件中，所述第二电极在所述照明部连续延伸。
  18. 根据权利要求16或17所述的有机发光二极管照明灯片，其中，所述多个有机发光二极管器件经封装薄膜封装，并在所述封装薄膜远离所述第一衬底的一面设置第二衬底，在所述第二衬底远离所述封装薄膜的一面设置第一水氧阻隔层，在所述第一衬底远离所述第二衬底的一面设置第二水氧阻 隔层。
  19. 根据权利要求18所述的有机发光二极管照明灯片，其中，所述不发光区域包括镂空区域，在所述灯片主体靠近所述镂空区域位置处和所述灯片主体的边缘位置处，所述第一水氧阻隔层和所述第二水氧阻隔层贴附在一起。
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