WO2018025638A1 - 真空蒸着装置 - Google Patents

真空蒸着装置 Download PDF

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Publication number
WO2018025638A1
WO2018025638A1 PCT/JP2017/026066 JP2017026066W WO2018025638A1 WO 2018025638 A1 WO2018025638 A1 WO 2018025638A1 JP 2017026066 W JP2017026066 W JP 2017026066W WO 2018025638 A1 WO2018025638 A1 WO 2018025638A1
Authority
WO
WIPO (PCT)
Prior art keywords
vapor deposition
vacuum
substrate
storage box
deposition material
Prior art date
Application number
PCT/JP2017/026066
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
僚也 北沢
寿充 中村
伸一 朝比奈
一也 斎藤
Original Assignee
株式会社アルバック
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社アルバック filed Critical 株式会社アルバック
Priority to KR1020187033457A priority Critical patent/KR102170484B1/ko
Priority to CN201780039108.3A priority patent/CN109415800B/zh
Priority to JP2018531822A priority patent/JP6554612B2/ja
Publication of WO2018025638A1 publication Critical patent/WO2018025638A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/225—Oblique incidence of vaporised material on substrate
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases

Definitions

  • the present invention relates to a vacuum vapor deposition apparatus, and more particularly to a so-called deposition down type in which a sublimation or vaporized vapor deposition portion provided in a storage box is positioned vertically above a film-forming object in a vacuum chamber.
  • Patent Document 1 This type of vacuum deposition apparatus is known from Patent Document 1, for example.
  • substrate transport means for transporting a substrate in one direction of the vacuum chamber is provided below the vacuum chamber in the vertical direction, and a vapor deposition source is disposed on the upper portion thereof.
  • the vapor deposition source has a cylindrical storage box that is provided so as to straddle the substrate, and stores the vapor deposition substance at a predetermined interval along its longitudinal direction at the lower part of the storage box. It is installed. Then, the vapor deposition material is heated with a heater to be sublimated or vaporized in the storage box, and the sublimated or vaporized material is ejected from the ejection port toward the substrate to form a film on the substrate.
  • the vapor deposition material sublimated or vaporized in the container box is not only ejected from the ejection port toward the substrate, but also adheres to and accumulates on the outer surface portion of the container box located around the ejection port, for example.
  • the deposited and deposited vapor deposition material can be a source of particles.
  • an object of the present invention is to provide a so-called deposition down type vacuum deposition apparatus that can reduce the influence of particles as much as possible.
  • the vacuum of the present invention includes a vapor deposition source disposed in a vacuum chamber, and the vapor deposition source includes a storage box that stores the vapor deposition material and a heating unit that heats the vapor deposition material to sublimate or vaporize it.
  • the vapor deposition apparatus is provided with an ejection portion for ejecting vapor of vaporized vapor deposition material, which is sublimated or vaporized, in the storage box, the ejection portion being located vertically above the film formation in the vacuum chamber, and the ejection portion being in the vertical direction
  • the vapor deposition material vapor is ejected from the ejection port toward the film formation object, and the storage box is offset at a position away from the end of the film formation object. It is characterized by that.
  • the vapor deposition material sublimated or vaporized in the storage box when the vapor deposition material sublimated or vaporized in the storage box is ejected from the ejection port toward the substrate, the vapor deposition material adheres to and accumulates on the outer surface of the storage box, and this is a source of particles. Even if the container falls downward, the container box is offset so that it is difficult to adhere to the deposition target. As a result, the influence of particles can be reduced as much as possible.
  • the heating means preferably heats the storage box and heats the vapor deposition material by radiant heat from the storage box. According to this, even if the vapor deposition material adheres to the outer surface of the storage box, the vapor deposition material is sublimated or vaporized again because the storage box itself is heated. For this reason, it is difficult to produce a particle generation source, which is advantageous.
  • a shutter plate that is disposed in the vicinity of the jet outlet and prevents the vapor of the vapor deposition material from the jet outlet from being jetted toward the film-forming object is capable of reciprocating in the vertical direction. It is preferable that the film is offset from the end of the film formation object in the separation direction. According to this, even if the vapor deposition material adhering to the shutter plate becomes particles and falls downward, it can be made difficult to adhere to the film formation object.
  • the horizontal does not mean a strict horizontal, but a substantial horizontal.
  • the deposition target is a substrate that is long in one direction and the substrate is moved relative to the vapor deposition source in one direction in the vacuum chamber by the moving means, the substrate relative to the vapor deposition source.
  • ejection portions are arranged in the Y-axis direction at predetermined intervals in the storage box, with the moving direction as the X-axis direction and the width direction of the substrate orthogonal to the X-axis direction as the Y-axis direction.
  • vapor deposition sources can be arranged on both sides in the Y-axis direction in order to improve the uniformity of the film thickness distribution.
  • substrate S a glass substrate having a rectangular outline with a predetermined thickness
  • substrate S a predetermined thickness
  • Embodiments of the vacuum deposition apparatus of the present invention will be described below.
  • the vacuum deposition apparatus DM includes a vacuum chamber 1. Although not shown and described in particular, the vacuum chamber 1 is connected to a vacuum pump through an exhaust pipe so that it can be evacuated and held at a predetermined pressure (degree of vacuum).
  • a substrate transfer device 2 is provided at the lower part of the vacuum chamber 1 in the vertical direction.
  • the substrate transfer device 2 includes a carrier 21 that holds the substrate S in a state where an upper surface as a film formation surface is opened, and the carrier 21 and, consequently, the substrate S are predetermined in one direction in the vacuum chamber 1 by a driving device (not shown). It moves at speed.
  • the substrate transfer device 2 is arranged in one direction in the vacuum chamber 1 with respect to a vapor deposition source described later.
  • a moving means for relatively moving S is configured.
  • the relative movement direction of the substrate S with respect to the vapor deposition source is defined as the X-axis direction
  • the width direction of the substrate S orthogonal to the X-axis direction is defined as the Y-axis direction.
  • the vacuum chamber 1 is provided with a vapor deposition source 3 positioned vertically above the substrate S.
  • the vapor deposition source 3 includes a storage box 31 that stores a vapor deposition material Vm that is appropriately selected according to a thin film to be deposited on the substrate S.
  • the storage box 31 has a rectangular parallelepiped shape that is long in the Y-axis direction, and a plurality of ejection nozzles 32 serving as ejection portions formed of cylinders are formed at corners in the Y-axis direction on the lower surface. Projections are provided at predetermined intervals in the Y-axis direction.
  • the ejection nozzle 32 is configured such that the hole axis 32a of the nozzle hole is inclined at a predetermined angle with respect to the vertical direction, and the ejection port 32b at the tip thereof is inclined obliquely downward in the vertical direction.
  • the inclination angle of the hole axis 32a determines the width of the substrate S, the ejection distribution of the vapor deposition material Vm from the ejection nozzle 32 caused by the vapor deposition material Vm, the uniformity of the thickness of the thin film to be formed on the substrate S, and the like. It is set as appropriate in consideration.
  • a heating wire 33 as a heating means is wound around the housing box 31 including the ejection nozzle 32, and the housing box 31 can be heated substantially uniformly over the whole by energizing from a power source not shown. I am doing so. And by heating the storage box 31, the vapor deposition material Vm in the container 31a can be heated by the radiant heat from the storage box 31, and the vapor deposition material Vm can be sublimated or vaporized.
  • a dispersion plate is provided in the storage box 31, and the storage box 31 is heated to sublimate or vaporize the vapor deposition material Vm therein.
  • the ejection nozzles 32 can be ejected substantially uniformly.
  • the method of heating the storage box 31 substantially uniformly is not limited to the above.
  • another heating means for directly heating the vapor deposition material Vm in the container 31a may be provided.
  • a heating wire as another heating means is wound around the container 31a and energized to transfer the vapor deposition material Vm. You may heat by.
  • the container box 31 configured as described above is offset at a position where the ejection port 32b of the ejection nozzle 32 is separated from one end of the substrate S in the Y-axis direction.
  • the distance DS between the jet port 32b and one end in the Y-axis direction of the substrate S is appropriately set in consideration of the uniformity of the thickness of the thin film to be formed on the substrate S.
  • the vacuum chamber 1 is reciprocated in the vertical direction, which is disposed in the vicinity of the ejection port 32b of the ejection nozzle 32 and prevents vapor of the vapor deposition material from the ejection port 32b from being ejected toward the substrate S.
  • a free shutter plate 4 is provided.
  • the shutter plate 4 moves to the shielding position indicated by the phantom line in the figure until the ejection of the vapor deposition material Vm from the ejection nozzle 32 is stabilized, and moves to the ejection position indicated by the solid line in the figure when the ejection is stabilized.
  • the driving means for reciprocating the shutter plate 4 between these two positions a well-known structure can be used, and thus the description thereof is omitted here.
  • the shutter plate 4 is also offset from the one end in the Y-axis direction of the substrate S in the separation direction. The lower end of the shutter plate 4 is bent in an L shape toward the storage box 31.
  • the vapor deposition material Vm sublimated or vaporized in the storage box 31 when the vapor deposition material Vm sublimated or vaporized in the storage box 31 is ejected from the ejection port 32b toward the substrate S, the vapor deposition material Vm adheres to the outer surface of the storage box 31. Even if the particles are deposited and fall downward as a generation source of particles, the container 31 is difficult to adhere to the substrate S because it is offset. As a result, the influence of particles can be reduced as much as possible.
  • the heating means 33 employs a configuration in which the container 31 is heated and the vapor deposition material Vm is heated by radiant heat from the container 31, the vapor deposition material Vm adheres to the inner surface and the outer surface of the container 31 including the jet port 32 b.
  • the vapor deposition material Vm is sublimated or vaporized again by heating the storage box 31 itself. For this reason, it is difficult to produce a particle generation source, which is advantageous.
  • the shutter plate 4 is offset from the end portion of the substrate S in the separating direction, and the lower end of the shutter plate 4 is bent in an L shape toward the storage box 31. According to this, similarly to the above, even if the vapor deposition material adhering to the shutter plate 4 becomes particles and falls down, it can be made difficult to adhere to the substrate.
  • the film thickness distribution may not be substantially uniform.
  • the storage boxes 31 can be arranged in the vacuum chamber 1 on both sides in the width direction of the substrate S, respectively.
  • the hole shaft 32a of each ejection nozzle 32 can be appropriately changed and arranged.
  • the substrate S can be set on the rotary stage 5 and film formation can be performed while rotating at a predetermined rotational speed.
  • the rotary stage 5 includes a plate-like holding unit 51 that holds the substrate S horizontally.
  • a rotary shaft 53 of a driving unit 52 such as a motor is connected to the holding unit 51, and the holding unit 51 is moved by the driving unit 52.
  • a known device that rotates around the rotation shaft 53 can be used. By adopting such a configuration, the film thickness distribution can be improved.
  • the deposition source 3 or the substrate S may be moved in order to improve the film thickness distribution.
  • at least one of the deposition source 3 and the substrate S is changed so that the distance DS between the deposition source 3 and the substrate S is changed while maintaining the state in which the storage box 3 is offset from the substrate S. May be moved horizontally.
  • the vapor deposition source 3 may be moved up and down, and the vapor deposition source 3 may be swung at a predetermined angle around an axis extending in the direction in which the ejection nozzles 32 are arranged side by side (X-axis direction).
  • the film-forming object was used as the glass substrate and it demonstrated as an example what forms a film while conveying a glass substrate by the board
  • the structure of a vacuum evaporation system is the above-mentioned. It is not limited to those.
  • the present invention is also applicable to an apparatus that forms a film on one side of a base material while the film formation target is a sheet-like base material and the base material is moved between a driving roller and a take-up roller at a constant speed. Applicable.
  • the deposition target is set in the vacuum chamber 1 and a driving means having a known structure is attached to the deposition source, so that the deposition source 3 is moved relative to the deposition target to form a film.
  • a driving means having a known structure is attached to the deposition source, so that the deposition source 3 is moved relative to the deposition target to form a film.
  • the present invention is applicable.
  • the ejection nozzles 32 are provided in one row in the storage box 31 has been described as an example, it may be provided in a plurality of rows.
  • DM Vacuum deposition apparatus
  • S Substrate (film formation), Vm ... Deposition material, 1 ... Vacuum chamber, 2 ... Substrate transport device (holding unit, moving means), 3 ... Deposition source, 31 ... Storage box, 32 DESCRIPTION OF SYMBOLS ... Jet nozzle (spout part), 32b ... Spout, 33 ... Heating wire (heating means), 4 ... Shutter plate, 51 ... Holding part, 52 ... Driving means, 53 ... Rotating shaft (axis).

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
PCT/JP2017/026066 2016-08-02 2017-07-19 真空蒸着装置 WO2018025638A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020187033457A KR102170484B1 (ko) 2016-08-02 2017-07-19 진공 증착 장치
CN201780039108.3A CN109415800B (zh) 2016-08-02 2017-07-19 真空蒸镀装置
JP2018531822A JP6554612B2 (ja) 2016-08-02 2017-07-19 真空蒸着装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-152343 2016-08-02
JP2016152343 2016-08-02

Publications (1)

Publication Number Publication Date
WO2018025638A1 true WO2018025638A1 (ja) 2018-02-08

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ID=61073370

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Application Number Title Priority Date Filing Date
PCT/JP2017/026066 WO2018025638A1 (ja) 2016-08-02 2017-07-19 真空蒸着装置

Country Status (5)

Country Link
JP (1) JP6554612B2 (ko)
KR (1) KR102170484B1 (ko)
CN (1) CN109415800B (ko)
TW (1) TWI658162B (ko)
WO (1) WO2018025638A1 (ko)

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003317948A (ja) * 2002-04-23 2003-11-07 Ulvac Japan Ltd 蒸発源及びこれを用いた薄膜形成装置
JP2004100002A (ja) * 2002-09-11 2004-04-02 Ulvac Japan Ltd 蒸発源及びこれを用いた薄膜形成装置

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4216522A (en) 1977-06-06 1980-08-05 Texas Instruments Incorporated Interchangeable module for integrated circuits
JPH04272169A (ja) * 1991-02-25 1992-09-28 Shimadzu Corp 含浸型真空蒸着装置
KR20060030426A (ko) * 2004-10-05 2006-04-10 삼성에스디아이 주식회사 진공 증착장치 및 진공 증착 방법
JP2008031501A (ja) * 2006-07-26 2008-02-14 Canon Inc 成膜装置および蒸着薄膜の製造方法
KR101063192B1 (ko) * 2008-11-12 2011-09-07 주식회사 야스 하향 증착이 가능한 증착원
KR20140120556A (ko) * 2013-04-03 2014-10-14 삼성디스플레이 주식회사 증착 장치
CN103233201B (zh) * 2013-05-03 2016-03-30 中国科学院光电技术研究所 一种向下热蒸发介质保护膜层的制备方法
KR20140145842A (ko) * 2013-06-14 2014-12-24 엘아이지에이디피 주식회사 증착소스 공급장치 및 이의 구동방법
KR20150057272A (ko) * 2013-11-19 2015-05-28 주식회사 포리스 하향식 증발원, 이를 이용한 증착 장치 및 증착 방법

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003317948A (ja) * 2002-04-23 2003-11-07 Ulvac Japan Ltd 蒸発源及びこれを用いた薄膜形成装置
JP2004100002A (ja) * 2002-09-11 2004-04-02 Ulvac Japan Ltd 蒸発源及びこれを用いた薄膜形成装置

Also Published As

Publication number Publication date
CN109415800A (zh) 2019-03-01
CN109415800B (zh) 2021-01-08
JPWO2018025638A1 (ja) 2018-10-18
KR20180137525A (ko) 2018-12-27
TW201816151A (zh) 2018-05-01
TWI658162B (zh) 2019-05-01
KR102170484B1 (ko) 2020-10-28
JP6554612B2 (ja) 2019-07-31

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