Classifications

• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
  • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
  • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/20—Exposure; Apparatus therefor
  • G03F7/2037—Exposure with X-ray radiation or corpuscular radiation, through a mask with a pattern opaque to that radiation
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/20—Exposure; Apparatus therefor
  • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
  • G03F7/2059—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using a scanning corpuscular radiation beam, e.g. an electron beam
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/70691—Handling of masks or workpieces
  • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
• • G—PHYSICS
  • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
  • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
  • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
  • G03F7/70—Microphotolithographic exposure; Apparatus therefor
  • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
  • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
  • G03F7/70866—Environment aspects, e.g. pressure of beam-path gas, temperature of mask or workpiece
  • G03F7/70875—Temperature, e.g. temperature control of masks or workpieces via control of stage temperature
• • H—ELECTRICITY
  • H01—ELECTRIC ELEMENTS
  • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
  • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
  • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
  • H01L21/67005—Apparatus not specifically provided for elsewhere
  • H01L21/67011—Apparatus for manufacture or treatment
  • H01L21/67098—Apparatus for thermal treatment
  • H01L21/67109—Apparatus for thermal treatment mainly by convection

Definitions

• the temperature stabilizing device as disclosed in US 5,685,363 contains a heat absorbing fluid passage or coolant passage included in the stabilizing base, through which heat absorbing fluid flows in order to cool the substrate holding device, and to convey heat away from the substrate holding device. This allows stabilizing the temperature of the substrate holding device underneath the heat absorbing chamber and provides better control of the temperature at which the substrate holding device and the target are to be stabilized.
• At least one pocket of said array of pockets is substantially shaped as a cone, a conical frustum, a truncated sphere, or a spherical frustum.
• the pocket is shaped such that the width of the gap at or near the circumferential edge of the pocket is smaller than the width of the gap at or near the center of the pocket.
• the shape of the pocket assists in keeping the droplets substantially on the desired location, in particular when the PCM exhibits more cohesion than adhesion with the surfaces of the holding plate and/or the base plate which are facing the gap .
• each pocket comprises a ring or a loop which is arranged in the gap between the holding plate and the elastic cover plate, and wherein the ring or the loop is arranged to surround a droplet in said pocket.
• the ring or loop is arranged in said pocket, preferably on top of said elastic cover plate, and acts as a confinement member for a droplet of PCM in said pocket .
• the present invention provides a substrate holding device comprising:
• the present invention provides an apparatus for processing or imaging a sample, wherein said apparatus comprises
• the supports are fixed to said second side via glue connections.
• the one or more supports are fixed in the corresponding holes via a glue connection, which glue connection is provided in a circumferential gap between the hole and the support extending into said hole .
• the combination of temperature sensors for measuring the temperature of the part of the exposing unit which faces the substrate holding device, the combined cooling device and heating device for accurately controlling the temperature of the cooling fluid, and the temperature control system for controlling the temperature of the cooling fluid based on the signal from the temperature sensors allows to control the temperature of the exposing device with high precision and to regulate the temperature difference between the substrate holding device and the exposing unit, in particular the part of said exposing unit which faces the substrate holding device, to be less than 4 °C, preferably less than 2 °C, more preferably less than 1 °C.
• the component comprises a modulation device for modulating the electromagnetic radiation or particles.
• the cooling arrangement comprises conduits for guiding a cooling fluid through the conduits and wherein the conduits are arranged in thermal contact with the component, the conduits are arranged for transporting the cooling fluid through or around the modulation device.
• a modulation device also generates an amount of heat which can be removed using the cooling arrangement according to this embodiment.
• Figure 4A and 4B are schematic partial cross sections of a second and a third exemplary embodiment of a substrate holding device
• the supports 7 comprise, for example, Titanium supports, which are non-magnetic. Non-magnetic supports are advantageous when using the substrate holding device 1 in a charged particle processing or imaging apparatus. Although the supports 7 may be clamped between the holding plate 2 and the base plate 4, it is preferred that the supports 7 are fixedly attached to the second side 6 of the holding plate 2 and/or to the base plate 4, as will be explained in more detail below with reference to figures 2, 3A, 3B and 3C.
• the thickness of the 0-rings 39 is less than the width w' of the gap 35 between the holding plate 32 and the base plate 34. This allows to assemble the substrate holding device 31 comprising the holding plate 32, the base plate 34 and the supports 37 and to obtain a gap 35 with the required width w' without interference of the O-rings 39. It is avoided that the O-rings 39 contact both the holding plate 32 and the base plate 34 or are compressed in between the holding plate 32 and the base plate 34, since this may have a negative influence on the flatness of the first side 33 of the holding plate 32.
• the solid droplet 38' of heat absorbing material is melted, for example by arranging the assembly in an oven at a temperature above the melting temperature. Due to the surface tension in the liquid droplet 38' of heat absorbing material, the liquid droplet 38' will assume a more spherical shape, as schematically indicated in figure 9C, and contacts the second side 36' of the holding plate 32' . The droplets 38' are now arranged to bridge the gap 35 between the base plate 34' and the holding plate 32' .
• the ring or loop 62 comprises a substantially rectangular cross-section in a direction substantially perpendicular the first side 53 of the holding plate 52.
• a substantially- flat upper surface of said ring or loop 62 is arranged facing the second side 56 of the holding plate 52.
• the beam stop array 408 is a component for at least partially and/or temporally blocking at least part of the charged particles of the multiple charged particle beams.
• the beam stop array 408 component is provided with conduits 409 which are part of the cooling arrangement.
• the cooling fluid coming from the cooling device 450 and from the heating device 470 is arranged to flow through the conduits 406 towards the conduits 409, wherein the conduits 409 are arranged in thermal contact with the beam stop array 408. Subsequently the cooling fluid flows back to the cooling device 450 via the conduits 406', 405.
• the conduits 409 are arranged inside the projection lens system 400 at or near a first end 403 of the projection lens system 400 that, in use, is arranged close to the substrate 470.
• the closed circuit comprises one or more temperature sensors for measuring the temperature of the cooling fluid in the conduits 404, 406, 409, 406', 405.
• the conduits 404, 406, 409, 406', 405. In the particular example shown in figure 14 :
• Figure 16 shows a schematic flowchart 160 of an example of a method for inspecting a target by means of an apparatus as described hereinbefore, the method comprising the steps of :

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• Physics & Mathematics (AREA)
• General Physics & Mathematics (AREA)
• Engineering & Computer Science (AREA)
• Health & Medical Sciences (AREA)
• Manufacturing & Machinery (AREA)
• Computer Hardware Design (AREA)
• Microelectronics & Electronic Packaging (AREA)
• Power Engineering (AREA)
• Condensed Matter Physics & Semiconductors (AREA)
• Toxicology (AREA)
• Atmospheric Sciences (AREA)
• Life Sciences & Earth Sciences (AREA)
• Environmental & Geological Engineering (AREA)
• Epidemiology (AREA)
• Public Health (AREA)
• Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
• Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
• Electron Beam Exposure (AREA)
• Sampling And Sample Adjustment (AREA)

Priority Applications (5)

Applications Claiming Priority (4)

Publications (1)

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Citations (7)

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• 2017
  • 2017-07-26 TW TW106125097A patent/TWI757314B/zh active
  • 2017-07-26 TW TW111103697A patent/TWI835063B/zh active
  • 2017-07-27 CN CN201780059072.5A patent/CN109844927B/zh active Active
  • 2017-07-27 KR KR1020227033553A patent/KR102580712B1/ko active Active
  • 2017-07-27 WO PCT/JP2017/028156 patent/WO2018021581A1/en not_active Ceased
  • 2017-07-27 KR KR1020197005730A patent/KR102449579B1/ko active Active
  • 2017-07-27 JP JP2019504870A patent/JP6951415B2/ja active Active
• 2021
  • 2021-09-24 JP JP2021155021A patent/JP7240463B2/ja active Active

Patent Citations (7)

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