WO2017222521A1 - Mémoire à effet hall de spin à base d'anisotropie magnétique perpendiculaire, utilisant l'effet spin-orbite - Google Patents

Mémoire à effet hall de spin à base d'anisotropie magnétique perpendiculaire, utilisant l'effet spin-orbite Download PDF

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WO2017222521A1
WO2017222521A1 PCT/US2016/038803 US2016038803W WO2017222521A1 WO 2017222521 A1 WO2017222521 A1 WO 2017222521A1 US 2016038803 W US2016038803 W US 2016038803W WO 2017222521 A1 WO2017222521 A1 WO 2017222521A1
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spin
mgo
cofeb
layer
spin orbit
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PCT/US2016/038803
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Sasikanth Manipatruni
Dmitri Nikonov
Roman CAUDILLO
Chia-Ching Lin
Ian A. Young
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Intel Corporation
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Publication of WO2017222521A1 publication Critical patent/WO2017222521A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Definitions

  • Embedded memory with state retention can enable energy and computational efficiency.
  • spin transfer torque based magnetic random access memory suffer from the problem of high voltage and high write current during the programming (e.g., writing) of a bit-cell.
  • large write current e.g., greater than 100 ⁇
  • voltage e.g., greater than 0.7 V
  • Limited write current also leads to high write error rates or slow switching times (e.g., exceeding 20 ns) in MTJ based MRAM.
  • the presence of a tunneling path leads to reliability issues in magnetic tunnel junctions.
  • Fig. 1 illustrates a device having an in-plane magnetic tunnel junction (MTJ) stack coupled to a spin orbit coupling interconnect.
  • MTJ magnetic tunnel junction
  • Fig. 2 illustrates a cross-section of the spin orbit coupling interconnect with electrons having their spins polarized in-plane and deflected up and down resulting from a flow of charge current.
  • FIG. 3 illustrates a device having an MTJ stack with a magnet having perpendicular magnetic anisotropy ( ⁇ ) coupled to an interface normal spin orbit material based interconnect, according to some embodiments of the disclosure.
  • Fig. 4 illustrates a cross-section of the interface normal spin orbit material based interconnect with electrons having their spins polarized perpendicular to the plane and deflected up and down resulting from a flow of charge current, according to some embodiments of the disclosure.
  • Fig. 5 illustrates a cross-section of a die layout having the device of Fig. 3 formed in metal 3 (M3) layer region, according to some embodiments of the disclosure.
  • Fig. 6 illustrates a cross-section of a die layout having the device of Fig. 3 formed in metal 2 (M2) and metal 1 (Ml) layer regions, according to some embodiments of the disclosure.
  • Fig. 7 illustrates a spin wave trans conductance scheme using the device of
  • FIG. 3 according to some embodiments of the disclosure.
  • Fig. 8 illustrates a majority gate using the device of Fig. 3, according to some embodiments of the disclosure.
  • Fig. 9 illustrates a plot showing improvement in energy-delay product using the device of Fig. 3 compared to the device of Fig. 2, in accordance with some embodiments of the disclosure.
  • Fig. 10 illustrates a method flowchart of generating and detecting spin waves using interface normal spin orbit material, according to some embodiments of the disclosure.
  • Fig. 11 illustrates a smart device or a computer system or a SoC (System-on-
  • Chip with device, spin wave transconductance scheme, and/or majority gate, according to some embodiments of the disclosure.
  • a perpendicular magnet switch which can be applied in logic and memory.
  • a device which comprises a perpendicular magnet in contact with a two-dimensional (2D) material (or a thin three dimensional (3D) material) with high spin orbit effect that generates perpendicular spin currents.
  • the device comprises of a 2D conductive material (e.g., semiconductor or metal) with Rashba-Bychkov effect.
  • the 2D conductive material generates a spin current polarized perpendicular to the plane of the device and this spin current propagates perpendicular to the plane of the device.
  • the magnet is formed of perpendicular magnet anisotropy (PMA) material with anisotropy axis perpendicular to the plane of the device.
  • a magnetic tunnel junction is formed on top of the PMA magnet for read-out of the magnetic state.
  • the perpendicular magnet switch of some embodiments enables perpendicular magnet anisotropy (PMA) based magnetic devices (e.g., MRAM and logic) comprising of spin orbit effects that generate perpendicular spin currents.
  • PMA perpendicular magnet anisotropy
  • MRAM magnetic random access memory
  • GSOE giant spin orbit effects
  • the perpendicular magnet switch, of some embodiments results in lower write error rates which enable faster MRAM (e.g., write time of less than 10 ns).
  • the perpendicular magnet switch of some embodiments decouple write and read paths to enable faster read latencies.
  • the perpendicular magnet switch of some embodiments uses significantly smaller read current through the MTJ and provides improved reliability of the tunneling oxide and MTJs. For example, less than 10 ⁇ compared to 100 ⁇ for nominal write is used by the perpendicular magnet switch of some embodiments.
  • signals are represented with lines. Some lines may be thicker, to indicate more constituent signal paths, and/or have arrows at one or more ends, to indicate primary information flow direction. Such indications are not intended to be limiting. Rather, the lines are used in connection with one or more exemplary embodiments to facilitate easier understanding of a circuit or a logical unit. Any represented signal, as dictated by design needs or preferences, may actually comprise one or more signals that may travel in either direction and may be implemented with any suitable type of signal scheme.
  • connection means a direct connection, such as electrical, mechanical, or magnetic connection between the things that are connected, without any intermediary devices.
  • coupled means a direct or indirect connection, such as a direct electrical, mechanical, or magnetic connection between the things that are connected or an indirect connection, through one or more passive or active intermediary devices.
  • circuit or “module” may refer to one or more passive and/or active components that are arranged to cooperate with one another to provide a desired function.
  • signal may refer to at least one current signal, voltage signal, magnetic signal, or data/clock signal.
  • the meaning of "a,” “an,” and “the” include plural references.
  • the meaning of "in” includes “in” and "on.”
  • scaling generally refers to converting a design (schematic and layout) from one process technology to another process technology and subsequently being reduced in layout area.
  • scaling generally also refers to downsizing layout and devices within the same technology node.
  • scaling may also refer to adjusting (e.g., slowing down or speeding up - i.e. scaling down, or scaling up respectively) of a signal frequency relative to another parameter, for example, power supply level.
  • substantially “close,” “approximately,” “near,” and “about,” generally refer to being within +/- 10% of a target value.
  • phrases “A and/or B” and “A or B” mean (A), (B), or (A and B).
  • phrase “A, B, and/or C” means (A), (B), (C), (A and B), (A and C), (B and C), or (A, B and C).
  • Fig. 1 illustrates device 100 having an in-plane magnetic tunnel junction
  • MTJ spin orbit coupling
  • SOC spin orbit coupling
  • the stack of layers having MTJ 121 is coupled to an electrode 122 formed of Spin Hall Effect (SHE) or SOC material, where the SHE material converts charge current Iw (or write current) to spin current Is.
  • Device 100 forms a three terminal memory cell with SHE induced write mechanism and MTJ based read-out.
  • Device 100 comprises MTJ 121, SHE Interconnect or electrode 122, and non-magnetic metal(s) 123a/b.
  • MTJ 121 comprises layers 121a, 121b, and 121c.
  • layers 121a and 121c are ferromagnetic layers.
  • layer 121b is a metal or a tunneling dielectric.
  • One or both ends along the horizontal direction of SHE Interconnect 122 is formed of non-magnetic metals 123a/b. Additional layers 121d, 121e, 121f, and 121g can also be stacked on top of layer 121c. In some embodiments, layer 121g is non-magnetic metal electrode.
  • the stack of layers 121a, 121b, 121c, 121d, 121e, and 121f are formed of materials which include: Co x FeyB z , MgO, Co x FeyB z , Ru, Co x FeyB z , IrMn, Ru, Ta, and Ru, respectively, where 'x,' 'y,' and 'z' are fractions of elements in the alloys.
  • Other materials may also be used to form MTJ 121.
  • MTJ 121 stack comprises free magnetic layer 121a, MgO tunneling oxide 121b, a fixed magnetic layer 121c/d/e which is a combination of CoFe, Ru, and CoFe layers, respectively, referred to as Synthetic Anti-Ferromagnet (SAF), and an Anti-Ferromagnet (AFM) layer 121f.
  • SAF Synthetic Anti-Ferromagnet
  • AFM Anti-Ferromagnet
  • magnetizations in the two CoFe layers are opposite, and allows for cancelling the dipole fields around the free magnetic layer such that a stray dipole field will not control the free magnetic layer.
  • the free and fixed magnetic layers are formed of CFGG (i.e., Cobalt (Co), Iron (Fe), Germanium (Ge), or Gallium (Ga) or a combination of them).
  • FM 121a/c are formed from Heusler alloys.
  • Heusler alloys are ferromagnetic metal alloys based on a Heusler phase. Heusler phases are intermetallic with certain composition and face-centered cubic crystal structure. The ferromagnetic property of the Heusler alloys are a result of a double-exchange mechanism between neighboring magnetic ions.
  • SHE Interconnect 122 (or the write electrode) is made of one or more of ⁇ -
  • SHE Interconnect 122 transitions into high conductivity non-magnetic metal(s) 123a/b to reduce the resistance of SHE
  • the non-magnetic metal(s) 123a/b are formed from one or more of: Cu, Co, a-Ta, Al, CuSi, or NiSi.
  • the magnetization direction of the fixed magnetic layer 121c is perpendicular relative to the magnetization direction of the free magnetic layer 121a (e.g., magnetization directions of the free and fixed magnetic layers are not parallel, rather they are orthogonal).
  • magnetization direction of the free magnetic layer 121a is in-plane while the magnetization direction of the fixed magnetic layer 121c is perpendicular to the in- plane.
  • magnetization direction of the fixed magnetic layer 121a is in-plane while the magnetization direction of the free magnetic layer 121c is perpendicular to the in- plane.
  • the thickness of a ferromagnetic layer may determine its equilibrium magnetization direction. For example, when the thickness of the ferromagnetic layer 121a/c is above a certain threshold (depending on the material of the magnet, e.g. approximately 1.5 nm for CoFe), then the ferromagnetic layer exhibits magnetization direction which is in-plane. Likewise, when the thickness of the ferromagnetic layer 121a/c is below a certain threshold (depending on the material of the magnet), then the ferromagnetic layer 121a/c exhibits magnetization direction which is perpendicular to the plane of the magnetic layer.
  • a certain threshold depending on the material of the magnet
  • factors may also determine the direction of magnetization.
  • factors such as surface anisotropy (depending on the adj acent layers or a multi -layer composition of the ferromagnetic layer) and/or crystalline anisotropy (depending on stress and the crystal lattice structure modification such as FCC (face centered cubic lattice), BCC (body centered cubic lattice), or Llo-type of crystals, where Llo is a type of crystal class which exhibits perpendicular magnetizations), can also determine the direction of magnetization.
  • surface anisotropy depending on the adj acent layers or a multi -layer composition of the ferromagnetic layer
  • crystalline anisotropy depending on stress and the crystal lattice structure modification
  • FCC face centered cubic lattice
  • BCC body centered cubic lattice
  • Llo-type of crystals where Llo is a type of crystal class which exhibits perpendicular magnetizations
  • the applied current I w is converted into spin current Is by SHE
  • Interconnect 122 This spin current switches the direction of magnetization of the free layer and thus changes the resistance of MTJ 121. However, to read out the state of MTJ 121 , a sensing mechanism is needed to sense the resistance change.
  • the magnetic cell is written by applying a charge current via SHE
  • the direction of the magnetic writing (in the free magnet layer 121a) is decided by the direction of the applied charge current.
  • Positive currents e.g., currents flowing in the +y direction
  • the injected spin current in-tum produces spin torque to align the free magnet 121 a (coupled to the SHE layer 122 of SHE material) in the +x direction.
  • Negative currents e.g., currents flowing in the -y direction
  • the injected spin current in-tum produces spin torque to align the free magnet 121a (coupled to the SHE material of layer 122) in the -x direction.
  • the directions of spin polarization and thus of the free layer magnetization alignment are reversed compared to the above.
  • Fig. 2 illustrates cross-section view 200 of the spin orbit coupling interconnect
  • T s P SHE (w, t, sf , ⁇ 5 ⁇ )( ⁇ x 3 ⁇ 4 . . . (1)
  • z is the unit vector perpendicular to the interface
  • P SHE is the spin Hall injection efficiency which is the ratio of magnitude of transverse spin current to lateral charge current
  • w is the width of the magnet
  • t is the thickness of the SHE Interconnect 122
  • S f is the spin flip length in SHE Interconnect 122
  • ⁇ 5 ⁇ is the spin Hall angle for SHE Interconnect 122 to free ferromagnetic layer interface.
  • the injected spin angular momentum responsible for the spin torque given by:
  • the generated spin up and down currents 201/202 (e.g., / s ) are described as a vector cross-product given by:
  • This spin to charge conversion is based on Tunnel Magneto Resistance (TMR) which is highly limited in the signal strength generated.
  • TMR Tunnel Magneto Resistance
  • the TMR based spin to charge conversion has low efficiency (e.g., less than one).
  • perpendicularly magnetized free magnet layer coupled to SOC interconnect 122 can only be switched inefficiently and only in the presence of a significant external magnetic field. This means forming devices (e.g., logic and memory) with perpendicular magnetic anisotropy (PMA) are a challenge with SOC interconnect 122.
  • perpendicularly magnetized free magnet refers to a magnet having magnetization which is perpendicular to the plane of the magnet as opposed to in-plane magnet that has magnetization in a direction along the plane of the magnet.
  • Fig. 3 illustrates device 300 having an MTJ stack with a magnet having PMA coupled to an interface normal spin orbit material based interconnect 322, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 3 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • Device 300 comprises a magnetic junction (e.g., MTJ 321 or a spin valve) which couples to an interface normal spin orbit material based interconnect 322. Other materials and layers are similar as those of device 100. For example, the SAF, AFM, and metal interconnects 123 are the same as those described with reference to 100 of Fig. 1. Referring back to Fig.
  • device 300 illustrates a geometry of a 3-terminal memory cell with an interface normal spin orbit material induced write mechanism and MTJ based read-out.
  • MTJ 321 comprises free perpendicular magnet layer (FM1) 321a, layer 121b (e.g., MgO tunneling oxide for MTJ, or metal layer for spin valve), a fixed
  • FM2 perpendicular magnet
  • SAF Synthetic Anti-Ferro-magnet
  • AFM Anti-Ferromagnet
  • the SAF layer 121d/e allows for cancelling the dipole fields around the free layer.
  • layer 322 having interface normal spin orbit material comprises materials that exhibit Rashba-Bychkov effect.
  • the interface normal spin orbit material generates a spin current polarized perpendicular to the interface of interconnect 322, and the spin current propagate perpendicular to the interface.
  • the interface normal spin orbit material is formed of one of a 2D material or a 3D material, where the 3D material is thinner than the 2D material, and where the 2D material exhibits high spin orbit effect.
  • 2D materials are materials with a single atom or formula unit thickness.
  • 2D material that exhibits Rashba-Bychkov effect (RBE) can be a semiconductor or metal, in accordance with some embodiments.
  • the 2D materials include extrinsic material such as graphene, M0S2, ⁇ VSe2, WS2, MoSe2 with Copper, Silver, Platinum, Bismuth, Flourine, and Hydrogen adsorbents. These adsorbents are intrinsic material which are added on top of the extrinsic material. Examples of 3D materials are: Ta, W, and CuBi.
  • the interface normal spin orbit material based interconnect 322 is formed of chalcogenide material. In some embodiments, the
  • chalcogenide material is selected from a group consisting of: TiSe2, MoSe2, ⁇ VSe2, S1S2, B2S3, Sb2S3, Ta2S, Re?.S7, and semiconductors of the type MX ', with 'M' being a transition metal atom (e.g., Mo, W, etc.) and 'X' being a chalcogen atom (e.g., S, Se, or Te).
  • 'M' being a transition metal atom (e.g., Mo, W, etc.)
  • 'X' being a chalcogen atom (e.g., S, Se, or Te).
  • interface normal spin orbit material based interconnect 322 is formed of a material which is selected from a group consisting of: graphene, T1S2, WS2, M0S2, TiSe2, WSe 2 , MoSe 2 , B2S3, Sb 2 S 3 , Ta 2 S, ReaS?, LaCPS 2 , LaOAsS 2 , ScOBiS 2 , GaOBiS 2 , AIOB1S2, LaOSbS 2 , BiOBiS 2 , YOB1S2, InOBiS 2 , LaOBiSe 2 , TiOBiS 2 , CeOBiS 2 , PrOBiS 2 , NdOBiS 2 , LaOBiS2, and SrFBiS2.
  • the free perpendicular magnet layer 321a of the magnetic junction (e.g., spin valve or MTJ 321), which is coupled to interface normal spin orbit material based interconnect 322, comprises one or a combination of materials selected from a group consisting of a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, and Yttrium Iron Garnet (YIG).
  • a Heusler alloy Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, and Yttrium Iron Garnet (YIG).
  • the Heusler alloy is a material selected from a group consisting of: Cu 2 MnAl, Cu 2 MnIn, Cu 2 MnSn, Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa Co 2 MnAl, Co 2 MnSi, Co 2 MnGa, Co 2 MnGe, Pd 2 MnAl, Pd 2 MnIn, Pd 2 MnSn, Pd 2 MnSb, Co 2 FeSi, Co 2 FeAl, Fe 2 VAl, Mn 2 VGa, Co 2 FeGe, MnGa, and MnGaRu.
  • the free perpendicular magnet layer 321a of the magnetic junction (e.g., spin valve or MTJ 321) is formed of a stack of materials, wherein the materials for the stack are selected from a group consisting of: Co and Pt; Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO; MgO, CoFeB, V, CoFeB, and MgO; MgO, CoFeB, Mo, CoFeB, and MgO; Mn x Ga y ; Materials with Llo symmetry; and materials with tetragonal crystal structure.
  • the materials for the stack are selected from a group consisting of: Co and Pt; Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO;
  • Llo is a crystallographic derivative structure of a FCC structure and has two of the faces occupied by one type of atom and the corner and the other face occupied with the second type of atom.
  • phases with the Llo structure are ferromagnetic the
  • the magnetization vector usually is along the [0 0 1] axis of the crystal.
  • materials with Llo symmetry include CoPt and FePt.
  • materials with tetragonal crystal structure and magnetic moment are Heusler alloys such as CoFeAl, MnGe, MnGeGa, and MnGa.
  • the free magnet layer of the magnetic junction e.g., spin valve or MTJ 321) is formed of a single layer of one or more materials.
  • the single layer is formed of MnGa.
  • the fixed perpendicular magnet layer 121c is formed with interfacial PMA, multi -interface PMA, magnetic crystalline anisotropy or multi-layer PMA.
  • the free perpendicular magnet layer 121a is formed with interfacial PMA, multi-interface PMA, magnetic crystalline anisotropy or multi-layer PMA.
  • TMR is used for memory readout from PMA-MTJ 321.
  • the magnet with PMA is formed is formed of a stack of materials, wherein the materials for the stack are selected from a group consisting of: Co and Pt; Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO; MgO, CoFeB, V, CoFeB, and MgO; MgO, CoFeB, Mo, CoFeB, and MgO; Mn x Ga y ; Materials with Llo symmetry; and materials with tetragonal crystal structure.
  • the magnet with PMA is formed of a single layer of one or more materials. In some embodiments, the single layer is formed of MnGa.
  • the perpendicular magnets of layer 321a of the magnetic junction are formed with a sufficiently high anisotropy (indicated by an effective anisotropy magnetic field Hk) and sufficiently low saturated magnetization (M s ) to increase injection of spin currents.
  • Saturated magnetization Ms is generally the state reached when an increase in applied external magnetic field H cannot increase the magnetization of the material.
  • sufficiently low M s refers to M s less than 200 kA/m (kilo- Amperes per meter).
  • Anisotropy Hk generally refers to the material property which is directionally dependent. Materials with high Hk are materials with material properties that are highly directionally dependent.
  • sufficiently high Hk in context of Heusler alloys is considered to be greater than 2000 Oe (Oersted).
  • the magnetic cell is written by applying a charge current via the interface normal spin orbit material based interconnect 322 (or electrode).
  • the direction of the magnetic writing is decided by the direction of the applied charge current.
  • Positive currents (along +y) produce a spin injection current with transport direction (along +z) and spins pointing to (+z) direction.
  • Negative currents (along -y direction) produce a spin inj ection current with transport direction (along +z direction) and spins pointing to (-z) direction.
  • Fig. 4 illustrates cross-section 400 of the interface normal spin orbit material based interconnect with perpendicular up and down spins generated from a flow of charge current, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 4 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • the generated current is expressed as a tensor product instead of a cross product:
  • J s is the density of the spin current 401/402 polarized along z-axis and propagating along z-axis
  • 0 yzz _ RBE is the effective Rashba-Bychkov effect ratio relating the spin polarized current density with the charge current density along the 'y' direction
  • J c is the charge current density.
  • the injected spin current I s in turn produces spin torque to align the free perpendicular magnet in the +z or -z direction.
  • P RBE ( ⁇ — /j, )/( / ⁇ + /j, ) is the Rashba Bychkov effect injection efficiency which is the ratio of magnitude of transverse spin current to lateral charge current
  • w is the width of the magnet
  • t is the thickness of the Interconnect 322
  • X S f is the spin flip length in
  • Interconnect 322 9 yzz _ RBE is the Rashba-Bychkov effect ratio for Interconnect 322 to free ferromagnetic layer interface.
  • the injected spin torque is given by:
  • Various embodiments describe a highly efficient transduction method and associated apparatus for converting spin currents to charge currents.
  • spin-to-charge conversion is achieved via interface normal spin orbit interaction in metallic interfaces (e.g., using Inverse Rashba-Bychkov Effect) where a spin current injected from an input magnet produces a charge current.
  • Table 1 summarizes transduction mechanisms for converting spin current to charge current and charge current to spin current for bulk materials and interfaces.
  • Table 1 Transduction mechanisms for Spin to Charge and Charge to Spin Conversion due to Spin-Orbit
  • Fig. 5 illustrates cross-section 500 of a die layout having the device of Fig. 3 formed in metal 3 (M3) layer region, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 5 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • Cross-section 500 illustrates an active region having a transistor MN comprising diffusion region 501, a gate terminal 502, drain terminal 504, and source terminal 503.
  • the source terminal 503 is coupled to SL (source line) via poly or via, where the SL is formed on Metal 0 (MO).
  • the drain terminal 504 is coupled to MOa (also metal 0) through via 505.
  • the drain terminal 504 is coupled to interface normal spin orbit material based interconnect 322 through Via 0-1 (e.g., via connecting metal 0 to metal 1 layers), metal 1 (Ml), Via 1 -2 (e.g., via connecting metal 1 to metal 2 layers), and Metal 2 (M2).
  • the magnetic junction (e.g., MTJ 321 or spin valve) is formed in the metal 3 (M3) region.
  • the perpendicular free magnet layer of the magnetic junction couples to interface normal spin orbit material based interconnect 322.
  • the fixed magnet layer of magnetic junction couples to the bit-line (BL) via interface normal spin orbit material based interconnect 322 through Via 3-4 (e.g., via connecting metal 4 region to metal 4 (M4)).
  • bit- line is formed on M4.
  • transistor MN is formed in the front end of the die while the interface normal spin orbit material based interconnect 322 is located in the back end of the die.
  • the interface normal spin orbit material based interconnect 322 is located in the back end metal layers or via layers for example in Via 3.
  • the electrical connectivity to the device is obtained in layers M0 and M4 or Ml and M5 or any set of two parallel interconnects.
  • Fig. 6 illustrates cross-section 600 of a die layout having the device of Fig. 3 formed in metal 2 and metal 1 layer regions, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 6 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • the magnetic junction e.g., MTJ 321 or spin valve
  • the interface normal spin orbit material based interconnect 322 is formed in the metal 1 region.
  • Fig. 7 illustrates a spin wave trans conductance scheme 700 using the device of
  • Fig. 3 according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 7 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • scheme 700 comprises an input interface normal spin orbit material based interconnect 723 (or SOC layer 723), spin wave interconnect 721, and output interface normal spin orbit material based interconnect 733 (or layer exhibiting inverse SOC effect also referred to as ISOC 733).
  • SOC layer 723 is coupled to a spin wave generator (e.g., current source 704) which has its terminals coupled to two opposite ends of SOC 723.
  • the spin wave generator comprises at least one of: current source, an antenna, a tunneling magnetoresistance (TMR) device, or a magnetoelectric device.
  • ISOC layer 733 is coupled to a spin wave detector
  • both SOC 723 and ISOC 733 are output interface normal spin orbit material based interconnects.
  • one end of spin wave interconnect 721 is coupled to middle region of SOC 723.
  • the other end of spin wave interconnect 721 is coupled to a middle region of ISOC 733.
  • interface normal spin orbit material based interconnect [0057] In some embodiments, interface normal spin orbit material based interconnect
  • interface normal spin orbit material based interconnect 733 comprises of materials exhibiting inverse spin orbit coupling (ISOC) such as one of inverse SHE (ISHE) or inverse Rashba-Bychkov effect (IRBE).
  • ISOC inverse spin orbit coupling
  • SOC layer 723 and ISOC layer 733 are formed of the same material, but exhibit different functions.
  • SOC layer 723 converts charge current from IAC 704 into perpendicular spin currents (e.g., perpendicular to the plane of spin wave interconnect 721).
  • spin wave generator 704 can be a current source, an antenna, or any other suitable device.
  • spin wave interconnect 721 is a ferromagnet (FM).
  • FM 721 has perpendicular magnetic anisotropy.
  • FM 721 is formed of the same materials as the free perpendicular magnet of MTJ 321.
  • the current through SOC layer 723 generates spin currents pointing perpendicular to the plan of SOC layer 723. These spin currents cause spin waves (or domain walls) to be generated in FM 721.
  • the spin waves propagate along the length of FM 721 towards the other end of FM 721.
  • the spin wave is converted into charge current by inverse Rashba-Bychkov effect of ISOC layer 733.
  • This charge current causes a potential difference between the two ends of ISOC layer 733.
  • the potential difference is detected by a spin wave detector (e.g., voltage source 705).
  • Fig. 8 illustrates majority gate 800 using the device of Fig. 3, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 8 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • multiple domain walls or spin waves are generated by different spin wave generating sources, and these spin waves interact with one another to generate a resultant spin wave. This resultant spin wave is a function of the majority of the spin waves, in accordance with some embodiments. The resultant spin wave is then converted into charge current and detected by a spin wave detector.
  • Majority gate 800 illustrates three inputs (however, the embodiments can be expanded to any odd number of inputs greater than three). These three inputs are SOC 822a having a spin wave generator 804a, SOC 822b having a spin wave generator 804b, and SOC 822c having a spin wave generator 804c.
  • SOC 822a is coupled to FM based spin wave interconnect 823a (or simply FM 823a).
  • SOC 822b is coupled to FM based spin wave interconnect 823b (or simply FM 823b).
  • SOC 822c is coupled to FM based spin wave interconnect 823c (or simply FM 823c).
  • spin wave interconnects 823a, 823b, and 823c form a 'T' junction. In some embodiments, spin wave interconnects 823a, 823b, and 823c form a 'Y' junction. In some embodiments, the junction point is coupled to another FM spin wave interconnect 823d (or simply FM 823d). In some embodiments, FM 823d is coupled to ISOC 824 which is coupled to a spin wave detector 805.
  • spin waves (or domain walls) are generated in a similar way by each SOC layer using Rashba-Bychkov effect.
  • three spin waves are generated in this example that interact at the junction (e.g., 'T' junction or 'Y' junction).
  • a resultant spin wave is generated which takes the direction of the majority of the input spin waves.
  • the resultant spin wave travels on FM 823d and is converted into charge by ISOC 824 using inverse Rashba-Bychkov effect.
  • the charge current generated by inverse Rashba-Bychkov effect is then detected as a potential difference between the two ends of ISOC 824, in accordance with some embodiments.
  • Fig. 9 illustrates plot 900 showing improvement in energy-delay product using the device of Fig. 3 compared to the device of Fig. 2, in accordance with some embodiments of the disclosure. It is pointed out that those elements of Fig. 9 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • x-axis is Write Energy (in fj)
  • y-axis is Delay (in ns).
  • two the energy-delay trajectories are compared as write voltage is varied— 901 which is the energy-delay trajectory of device 100 and 902 is the energy delay trajectory of device 300.
  • FIG. 10 illustrates method flowchart 1000 of generating and detecting spin waves using interface normal spin orbit material, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 10 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • a charge current is passed through interface normal spin orbit material layer (e.g., SOC 723 and SOC 822a).
  • interface normal spin orbit material layer e.g., SOC 723 and SOC 822a
  • charge current from IAC 704 or IAC 804 is passed through SOC 723 and SOC 822a, respectively.
  • the interface normal spin orbit material layer generates spin currents perpendicular to its plane.
  • a first spin wave is generated by an interface normal spin orbit material layer (e.g., SOC 723 and SOC 822a), where the first spin wave is to propagate through a first FM adjacent to the interface normal spin orbit material layer at one end of the first FM (e.g., spin wave interconnect FM 721 and spin wave interconnect FM 823a).
  • a voltage detector is applied across two ends along a length of the inverse interface normal spin orbit material layer (e.g., ISOC 733 and ISOC 824).
  • voltage detector VDC 705 is applied across ISOC 733 layer to detect the charge generated by ISOC 733.
  • a voltage across an inverse interface normal spin orbit material layer, the inverse interface normal spin orbit material layer being adjacent to the first FM at another end of the first FM, wherein the voltage is according to the generated first spin wave.
  • the method further comprises generating a second spin wave which propagates through a second FM, wherein the second FM is adjacent to the inverse interface normal spin orbit material layer at one end of the second FM.
  • the method comprises generating a third spin wave which propagates through a third FM, wherein the third FM is adjacent to the inverse interface normal spin orbit material layer at one end of the third FM.
  • detecting the voltage across the inverse interface normal spin orbit material layer comprises: applying a voltage detector across two ends along a length of the inverse interface normal spin orbit material layer, and determining a logic value which is according to the voltage and the first, second, and third spin waves.
  • Fig. 11 illustrates a smart device or a computer system or a SoC (System-on-
  • the transistors in various circuits and logic blocks described here are metal oxide semiconductor (MOS) transistors or their derivatives, where the MOS transistors include drain, source, gate, and bulk terminals.
  • the transistors and/or the MOS transistor derivatives also include Tri-Gate and FinFET transistors, Gate All Around Cylindrical Transistors, Tunneling FET (TFET), Square Wire, or Rectangular Ribbon Transistors, ferroelectric FET (FeFETs), or other devices implementing transistor functionality like carbon nanotubes or spintronic devices.
  • MOSFET symmetrical source and drain terminals i.e., are identical terminals and are interchangeably used here.
  • a TFET device on the other hand, has asymmetric Source and Drain terminals.
  • BJT PNP/NPN Bi-polar junction transistors
  • BiCMOS BiCMOS
  • CMOS complementary metal oxide semiconductor
  • Fig. 11 illustrates a block diagram of an embodiment of a mobile device in which flat surface interface connectors could be used.
  • computing device 1600 represents a mobile computing device, such as a computing tablet, a mobile phone or smart-phone, a wireless-enabled e-reader, or other wireless mobile device. It will be understood that certain components are shown generally, and not all components of such a device are shown in computing device 1600.
  • computing device 1600 includes first processor 1610 with device 300, spin wave transconductance scheme 700, and/or majority gate 800, according to some embodiments discussed. Other blocks of the computing device 1600 may also include device 300, spin wave transconductance scheme 700, and/or majority gate 800, according to some embodiments.
  • the various embodiments of the present disclosure may also comprise a network interface within 1670 such as a wireless interface so that a system embodiment may be incorporated into a wireless device, for example, cell phone or personal digital assistant.
  • processor 1610 and/or processor 1690
  • microcontrollers programmable logic devices, or other processing means.
  • the processing operations performed by processor 1610 include the execution of an operating platform or operating system on which applications and/or device functions are executed.
  • the processing operations include operations related to I/O (input/output) with a human user or with other devices, operations related to power management, and/or operations related to connecting the computing device 1600 to another device.
  • the processing operations may also include operations related to audio I/O and/or display I/O.
  • computing device 1600 includes audio subsystem
  • Audio functions can include speaker and/or headphone output, as well as microphone input. Devices for such functions can be integrated into computing device 1600, or connected to the computing device 1600. In one embodiment, a user interacts with the computing device 1600 by providing audio commands that are received and processed by processor 1610.
  • computing device 1600 comprises display subsystem
  • Display subsystem 1630 represents hardware (e.g., display devices) and software (e.g., drivers) components that provide a visual and/or tactile display for a user to interact with the computing device 1600.
  • Display subsystem 1630 includes display interface 1632, which includes the particular screen or hardware device used to provide a display to a user.
  • display interface 1632 includes logic separate from processor 1610 to perform at least some processing related to the display.
  • display subsystem 1630 includes a touch screen (or touch pad) device that provides both output and input to a user.
  • computing device 1600 comprises I/O controller 1640.
  • I/O controller 1640 represents hardware devices and software components related to interaction with a user. I/O controller 1640 is operable to manage hardware that is part of audio subsystem 1620 and/or display subsystem 1630. Additionally, I/O controller 1640 illustrates a connection point for additional devices that connect to computing device 1600 through which a user might interact with the system. For example, devices that can be attached to the computing device 1600 might include microphone devices, speaker or stereo systems, video systems or other display devices, keyboard or keypad devices, or other I/O devices for use with specific applications such as card readers or other devices. [0078] As mentioned above, I/O controller 1640 can interact with audio subsystem
  • display subsystem 1630 For example, input through a microphone or other audio device can provide input or commands for one or more applications or functions of the computing device 1600. Additionally, audio output can be provided instead of, or in addition to display output. In another example, if display subsystem 1630 includes a touch screen, the display device also acts as an input device, which can be at least partially managed by I/O controller 1640. There can also be additional buttons or switches on the computing device 1600 to provide I/O functions managed by I/O controller 1640.
  • I/O controller 1640 manages devices such as accelerometers, cameras, light sensors or other environmental sensors, or other hardware that can be included in the computing device 1600.
  • the input can be part of direct user interaction, as well as providing environmental input to the system to influence its operations (such as filtering for noise, adjusting displays for brightness detection, applying a flash for a camera, or other features).
  • computing device 1600 includes power management
  • Memory subsystem 1660 includes memory devices for storing information in computing device 1600.
  • Memory can include nonvolatile (state does not change if power to the memory device is interrupted) and/or volatile (state is indeterminate if power to the memory device is interrupted) memory devices.
  • Memory subsystem 1660 can store application data, user data, music, photos, documents, or other data, as well as system data (whether long-term or temporary) related to the execution of the applications and functions of the computing device 1600.
  • the machine-readable medium may include, but is not limited to, flash memory, optical disks, CD-ROMs, DVD ROMs, RAMs, EPROMs, EEPROMs, magnetic or optical cards, phase change memory (PCM), or other types of machine-readable media suitable for storing electronic or computer- executable instructions.
  • embodiments of the disclosure may be downloaded as a computer program (e.g., BIOS) which may be transferred from a remote computer (e.g., a server) to a requesting computer (e.g., a client) by way of data signals via a communication link (e.g., a modem or network connection).
  • a computer program e.g., BIOS
  • BIOS a computer program
  • a remote computer e.g., a server
  • a requesting computer e.g., a client
  • a communication link e.g., a modem or network connection
  • Connectivity 1670 includes hardware devices (e.g., wireless and/or wired connectors and communication hardware) and software components (e.g., drivers, protocol stacks) to enable the computing device 1600 to communicate with external devices.
  • the computing device 1600 could be separate devices, such as other computing devices, wireless access points or base stations, as well as peripherals such as headsets, printers, or other devices.
  • Connectivity 1670 can include multiple different types of connectivity.
  • the computing device 1600 is illustrated with cellular connectivity 1672 and wireless connectivity 1674.
  • Cellular connectivity 1672 refers generally to cellular network connectivity provided by wireless carriers, such as provided via GSM (global system for mobile communications) or variations or derivatives, CDMA (code division multiple access) or variations or derivatives, TDM (time division multiplexing) or variations or derivatives, or other cellular service standards.
  • Wireless connectivity (or wireless interface) 1674 refers to wireless connectivity that is not cellular, and can include personal area networks (such as Bluetooth, Near Field, etc.), local area networks (such as Wi-Fi), and/or wide area networks (such as WiMax), or other wireless communication.
  • computing device 1600 comprises peripheral connections 1680.
  • Peripheral connections 1680 include hardware interfaces and connectors, as well as software components (e.g., drivers, protocol stacks) to make peripheral connections.
  • the computing device 1600 could both be a peripheral device ("to" 1682) to other computing devices, as well as have peripheral devices ("from” 1684) connected to it.
  • the computing device 1600 commonly has a "docking" connector to connect to other computing devices for purposes such as managing (e.g., downloading and/or uploading, changing, synchronizing) content on computing device 1600.
  • a docking connector can allow computing device 1600 to connect to certain peripherals that allow the computing device 1600 to control content output, for example, to audiovisual or other systems.
  • the computing device 1600 can make peripheral connections 1680 via common or standards-based connectors.
  • Common types can include a Universal Serial Bus (USB) connector (which can include any of a number of different hardware interfaces), DisplayPort including MiniDisplayPort (MDP), High Definition Multimedia Interface (HDMI), Firewire, or other types.
  • USB Universal Serial Bus
  • MDP MiniDisplayPort
  • HDMI High Definition Multimedia Interface
  • Firewire or other types.
  • Reference in the specification to "an embodiment,” “one embodiment,” “some embodiments,” or “other embodiments” means that a particular feature, structure, or characteristic described in connection with the embodiments is included in at least some embodiments, but not necessarily all embodiments. The various appearances of "an embodiment,” “one embodiment,” or “some embodiments” are not necessarily all referring to the same embodiments.
  • an apparatus which comprises: a magnetic junction having a free magnet layer which has perpendicular magnetic anisotropy (PMA), wherein the free magnet layer has anisotropy axis perpendicular to a plane of a device; and an
  • the interconnect formed of a spin orbit material (also referred to as interface normal spin orbit material) which is to provide spin current polarized perpendicular to an interface of the interconnect, wherein the interconnect is adjacent to the free magnet layer of the magnetic junction.
  • the interface normal spin orbit material is selected from a group consisting of: graphene, TiS?., WS2, MoS?., TiSe2, WSe2, MoSe2, B2S3, Sb2S3, Ta 2 S, e?.S7, LaCPS 2 , LaOAsS 2 , ScOBiS 2 , GaOBiS 2 , AIOB1S2, LaOSbS 2 , BiOBiS 2 , YOB1S2, InOBiS 2 , LaOBiSe 2 , TiOBiS 2 , CeOBiS 2 , PrOBiS 2 , NdOBiS 2 , LaOBiS 2 , and SrFBiS 2 .
  • the interface normal spin orbit material is formed of
  • the interface normal spin orbit material comprises materials that exhibit Rashba-Bychkov effect.
  • the magnetic junction is one of a spin valve or a magnetic tunneling junction (MTJ).
  • the free magnet layer comprises one or a combination of materials selected from a group consisting of a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, and Yttrium Iron Garnet (YIG).
  • the Heusler alloy is a material selected from a group consisting of: Cu 2 MnAl, Cu 2 MnIn, Cu 2 MnSn, Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa Co 2 MnAl, Co 2 MnSi, Co 2 MnGa, Co 2 MnGe, Pd 2 MnAl, Pd 2 MnIn, Pd 2 MnSn, Pd 2 MnSb, Co 2 FeSi, Co 2 FeAl, Fe 2 VAl, Mn 2 VGa, Co 2 FeGe, MnGa, and MnGaRu.
  • the free magnet layer is formed of a stack of materials, wherein the materials for the stack are selected from a group consisting of: Co and Pt; Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO; MgO, CoFeB, V, CoFeB, and MgO; MgO, CoFeB, Mo, CoFeB, and MgO; Mn x Ga y ;
  • the free magnet layer is formed of a single layer of one or more materials.
  • the single layer is formed of MnGa.
  • a system which comprises: a memory; a processor coupled to the memory, the processor having a spin wave switch, which comprises an apparatus according the apparatus described above; and a wireless interface for allowing the processor to communicate with another device.
  • an apparatus which comprises: a magnet layer having perpendicular magnetic anisotropy (PMA); and a layer formed of interface normal spin orbit material, the layer being adjacent to one end of the magnet layer.
  • the apparatus comprises a spin wave generator adjacent to the layer formed of the interface normal spin orbit material.
  • the spin wave generator comprises at least one of: an antenna, a tunneling magnetoresistance (TMR) device, or a magnetoelectric device.
  • the apparatus a spin wave detector adjacent to another end of the magnet layer.
  • the magnet layer comprises one or a combination of materials selected from a group consisting of a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, and Yttrium Iron Garnet (YIG).
  • a Heusler alloy Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, and Yttrium Iron Garnet (YIG).
  • the Heusler alloy is a material selected from a group consisting of: Cu 2 MnAl, Cu 2 MnIn, Cu 2 MnSn, Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa Co 2 MnAl, Co 2 MnSi, Co 2 MnGa, Co 2 MnGe, Pd 2 MnAl, Pd 2 MnIn, Pd 2 MnSn, Pd 2 MnSb, Co 2 FeSi, Co 2 FeAl, Fe 2 VAl, Mn 2 VGa, Co 2 FeGe, MnGa, and MnGaRu.
  • the magnet layer is formed of a stack of materials, and wherein the materials for the stack are selected from a group consisting of: Co and Pt; Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO; MgO, CoFeB, V, CoFeB, and MgO; MgO, CoFeB, Mo, CoFeB, and MgO; Mn x Ga y ; Materials with Llo symmetry; and materials with tetragonal crystal structure.
  • the materials for the stack are selected from a group consisting of: Co and Pt; Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO; MgO, CoFeB, V, CoFeB, and MgO; MgO,
  • the interface normal spin orbit material is selected from a group consisting of: graphene, TiS?., WS 2 , M0S2, TiSe 2 , WSe 2 , MoSe 2 , B 2 S 3 , Sb 2 S 3 , T3 ⁇ 4S, Re 2 S7, LaCPS 2 , LaOAsS 2 , ScOBiS 2 , GaOBiS 2 , A10BiS 2 , LaOSbS 2 , BiOBiS 2 , YOBiS 2 , InOBiS 2 , LaOBiSe 2 , TiOBiS 2 , CeOBiS 2 , PrOBiS 2 , NdOBiS 2 , LaOBiS 2 , and SrFBiS 2 .
  • the magnet layer is formed of a single layer of one or more materials.
  • the single layer is formed of MnGa.
  • the interface normal spin orbit material is formed of one of a 2D material or a 3D material, wherein the 3D material is thinner than the 2D material.
  • the interface normal spin orbit material comprises a material that exhibits Rashba-Bychkov effect.
  • a system which comprises: a memory; a processor coupled to the memory, the processor having a spin wave switch, which comprises an apparatus according the apparatus described above; and a wireless interface for allowing the processor to communicate with another device.
  • a method which comprises: generating a first spin wave via an interface normal spin orbit material layer, wherein the first spin wave is to propagate through a first ferromagnet (FM) adjacent to the interface normal spin orbit material layer at one end of the first FM; and detecting a voltage across an inverse interface normal spin orbit material layer, the inverse interface normal spin orbit material layer being adjacent to the first FM at another end of the first FM, wherein the voltage is according to the generated first spin wave.
  • generating the first spin wave comprises passing a charge current through the interface normal spin orbit material layer, wherein the charge current causes the spin wave to be generated in the FM.
  • detecting the voltage across the inverse interface normal spin orbit material layer comprises applying a voltage detector across two ends along a length of the inverse interface normal spin orbit material layer.
  • the method comprises: generating a second spin wave which propagates through a second FM, wherein the second FM is adjacent to the inverse interface normal spin orbit material layer at one end of the second FM; and generating a third spin wave which propagates through a third FM, wherein the third FM is adjacent to the inverse interface normal spin orbit material layer at one end of the third FM.
  • detecting the voltage across the inverse interface normal spin orbit material layer comprises: applying a voltage detector across two ends along a length of the inverse interface normal spin orbit material layer; and determining a logic value which is according to the voltage and the first, second, and third spin waves.
  • an apparatus which comprises: means for generating a first spin wave via an interface normal spin orbit material layer, wherein the first spin wave is to propagate through a first ferromagnet (FM) adjacent to the interface normal spin orbit material layer at one end of the first FM; and means for detecting a voltage across an inverse interface normal spin orbit material layer, the inverse interface normal spin orbit material layer being adjacent to the first FM at another end of the first FM, wherein the voltage is according to the generated first spin wave.
  • FM ferromagnet
  • the means for generating the first spin wave comprises means for passing a charge current through the interface normal spin orbit material layer, and wherein the charge current causes the spin wave to be generated in the FM.
  • the means for detecting the voltage across the inverse interface normal spin orbit material layer comprises means for applying a voltage detector across two ends along a length of the inverse interface normal spin orbit material layer.
  • the apparatus comprises: means for generating a second spin wave which propagates through a second FM, wherein the second FM is adjacent to the inverse interface normal spin orbit material layer at one end of the second FM; and means for generating a third spin wave which propagates through a third FM, wherein the third FM is adjacent to the inverse interface normal spin orbit material layer at one end of the third FM.
  • the means for detecting the voltage across the inverse interface normal spin orbit material layer comprises: means for applying a voltage detector across two ends along a length of the inverse interface normal spin orbit material layer; and means for determining a logic value which is according to the voltage and the first, second, and third spin waves.
  • a system which comprises: a memory; a processor coupled to the memory, the processor having a spin wave switch, which comprises an apparatus according the apparatus described above; and a wireless interface for allowing the processor to communicate with another device.

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  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

L'invention porte sur un appareil qui comprend : une jonction magnétique possédant une couche d'aimant libre qui présente une anisotropie magnétique perpendiculaire (AMP), l'axe d'anisotropie de la couche d'aimant libre étant perpendiculaire à un plan d'un dispositif ; et une interconnexion formée d'un matériau spin-orbite qui est destinée à fournir une polarisation de courant en spin polarisé perpendiculairement à une interface de l'interconnexion, l'interconnexion étant adjacente à la couche d'aimant libre de la jonction magnétique. L'invention concerne un appareil qui comprend : une couche d'aimant ayant un AMP ; et une couche formée d'un matériau spin-orbite normal à l'interface, la couche étant adjacente à une extrémité de la couche d'aimant. D'autres modes de réalisation peuvent être décrits et/ou revendiqués.
PCT/US2016/038803 2016-06-22 2016-06-22 Mémoire à effet hall de spin à base d'anisotropie magnétique perpendiculaire, utilisant l'effet spin-orbite WO2017222521A1 (fr)

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