WO2019005147A1 - Mémoire à effet hall de spin à base d'anisotropie à aimant perpendiculaire, utilisant l'effet spin-orbite et le champ d'échange - Google Patents

Mémoire à effet hall de spin à base d'anisotropie à aimant perpendiculaire, utilisant l'effet spin-orbite et le champ d'échange Download PDF

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WO2019005147A1
WO2019005147A1 PCT/US2017/040473 US2017040473W WO2019005147A1 WO 2019005147 A1 WO2019005147 A1 WO 2019005147A1 US 2017040473 W US2017040473 W US 2017040473W WO 2019005147 A1 WO2019005147 A1 WO 2019005147A1
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spin
mgo
cofeb
afm
layer
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PCT/US2017/040473
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Sasikanth Manipatruni
Dmitri Nikonov
Ian Young
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Intel Corporation
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/18—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using Hall-effect devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials

Definitions

  • Embedded memory with state retention can enable energy and computational efficiency.
  • spin transfer torque based magnetic random access memory suffer from the problem of high voltage and high write current during the programming (e.g., writing) of a bit-cell.
  • large write current e.g., greater than 100 ⁇
  • voltage e.g., greater than 0.7 V
  • Limited write current also leads to high write error rates or slow switching times (e.g., exceeding 20 ns) in MTJ based MRAM.
  • the presence of a large current flowing through a tunnel barrier leads to reliability issues in magnetic tunnel junctions.
  • Fig. 1 illustrates a device having an in-plane magnetic tunnel junction (MTJ) stack coupled to a spin orbit coupling interconnect.
  • MTJ magnetic tunnel junction
  • Fig. 2C illustrates a plot comparing reliable write times for spin Hall MRAM and spin torque MRAM.
  • FIGs. 7A-C illustrate switching of magnetization by AFM electrode using opposite exchange bias than that of AFM electrode for Figs. 6A-C, according to some embodiments.
  • Fig. 9C illustrates a plot showing spin polarization capturing switching of a magnet with PMA using traditional spin orbit material, according to some embodiments of the disclosure.
  • FIG. 3A according to some embodiments of the disclosure.
  • a perpendicular magnet switch which can be applied in logic and memory.
  • a device which comprises a perpendicular magnet in contact with an interconnect or an electrode including an anti- ferromagnetic (AFM) material to generate an exchange coupling field (also referred to as exchange bias) along the plane of the device, wherein the interconnect is adjacent to the free magnet layer.
  • AFM material is to generate spin Hall effect (SHE).
  • SHE spin Hall effect
  • the SHE from the AFM material is to generate spin current polarized in the plane of the device, and where the spin current is to propagate perpendicular to the plane of the device.
  • the magnetic junction is one of a spin valve or a magnetic tunneling junction (MTJ).
  • the magnet is formed of perpendicular magnet anisotropy (PMA) material with anisotropy axis perpendicular to the plane of the device.
  • MTJ magnetic tunnel junction
  • signals are represented with lines. Some lines may be thicker, to indicate more constituent signal paths, and/or have arrows at one or more ends, to indicate primary information flow direction. Such indications are not intended to be limiting. Rather, the lines are used in connection with one or more exemplary embodiments to facilitate easier understanding of a circuit or a logical unit. Any represented signal, as dictated by design needs or preferences, may actually comprise one or more signals that may travel in either direction and may be implemented with any suitable type of signal scheme.
  • connection means a direct connection, such as electrical, mechanical, or magnetic connection between the things that are connected, without any intermediary devices.
  • coupled means a direct or indirect connection, such as a direct electrical, mechanical, or magnetic connection between the things that are connected or an indirect connection, through one or more passive or active intermediary devices.
  • circuit or “module” may refer to one or more passive and/or active components that are arranged to cooperate with one another to provide a desired function.
  • signal may refer to at least one current signal, voltage signal, magnetic signal, or data/clock signal.
  • the meaning of "a,” “an,” and “the” include plural references.
  • the meaning of "in” includes “in” and "on.”
  • MTJ spin orbit coupling interconnect
  • the stack of layers having MTJ 121 is coupled to an electrode 122 formed of spin Hall effect (SHE) or SOC material, where the SHE material converts charge current Iw (or write current) to spin current Is.
  • SHE spin Hall effect
  • Device 100 forms a three terminal memory cell with SHE induced write mechanism and MTJ based read-out.
  • Device 100 comprises MTJ 121, SHE Interconnect or electrode 122, and non-magnetic metal(s) 123a/b.
  • MTJ 121 comprises layers 121a, 121b, and 121c.
  • layers 121a and 121c are ferromagnetic layers.
  • layer 121b is a metal or a tunneling dielectric.
  • One or both ends along the horizontal direction of SHE Interconnect 122 is formed of non-magnetic metals 123a/b. Additional layers 121d, 121e, 121f, and 121g can also be stacked on top of layer 121c.
  • layer 121g is non-magnetic metal electrode.
  • the free and fixed magnetic layers are formed of CFGG (i.e., Cobalt (Co), Iron (Fe), Germanium (Ge), or Gallium (Ga) or a combination of them).
  • FM 121a/c are formed from Heusler alloys.
  • Heusler alloys are ferromagnetic metal alloys based on a Heusler phase. Heusler phases are intermetallic with certain composition and face-centered cubic crystal structure. The ferromagnetic property of the Heusler alloys are a result of a double-exchange mechanism between neighboring magnetic ions.
  • SHE Interconnect 122 (or the write electrode) include one or more of ⁇ -
  • SHE Interconnect 122 transitions into high conductivity non-magnetic metal(s) 123a/b to reduce the resistance of interconnect into and out of the SHE Interconnect 122.
  • the non-magnetic metal(s) 123a/b include one or more of: Cu, Co, a-Ta, Al, CuSi, or NiSi.
  • the magnetization direction of the fixed magnetic layer 121c in its stable state is parallel to the magnetization direction of the free magnetic layer 121a.
  • the thickness of a ferromagnetic layer i.e., fixed or free magnetic layer
  • the ferromagnetic layer exhibits magnetization direction which is in-plane.
  • the thickness of the ferromagnetic layer 121a/c is below a certain threshold (depending on the material of the magnet), then the
  • ferromagnetic layer 121a/c exhibits magnetization direction which is perpendicular to the plane of the magnetic layer.
  • factors may also determine the direction of magnetization.
  • factors such as surface anisotropy (depending on the adjacent layers or a multi -layer composition of the ferromagnetic layer) and/or crystalline anisotropy (depending on stress and the crystal lattice structure modification such as FCC (face centered cubic lattice), BCC (body centered cubic lattice), or Llo-type of crystals, where Llo is a type of crystal class which exhibits perpendicular magnetizations), can also determine the direction of magnetization.
  • surface anisotropy depending on the adjacent layers or a multi -layer composition of the ferromagnetic layer
  • crystalline anisotropy depending on stress and the crystal lattice structure modification
  • FCC face centered cubic lattice
  • BCC body centered cubic lattice
  • Llo-type of crystals where Llo is a type of crystal class which exhibits perpendicular magnetizations
  • the magnetic cell is written by applying a charge current via SHE
  • the direction of the magnetic writing (in the free magnet layer 121a) is decided by the direction of the applied charge current.
  • Positive currents e.g., currents flowing in the +y direction
  • the injected spin current in turn produces spin torque to align the free magnet 121a (coupled to the SHE layer 122 of SHE material) in the +x direction.
  • Negative currents e.g., currents flowing in the -y direction
  • the injected spin current in-tum produces spin torque to align the free magnet 121a (coupled to the SHE material of layer 122) in the -x direction.
  • the directions of spin polarization and thus of the free layer magnetization alignment are reversed compared to the above.
  • Fig. 2A illustrates a cross-section view 200 of the spin orbit coupling interconnect with electrons having their spins polarized in-plane and deflected up and down resulting from a flow of charge current. It is pointed out that those elements of Fig. 2A having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • positive charge current e.g., in the +y direction
  • J c produces the spin current 201 with electron flow in the +z direction and polarized in the front direction (e.g., in the +x direction).
  • This positive charge current also produces the spin current 202 with electron flow in the +z direction and polarized in the back direction (e.g., in the -x direction).
  • the vector of spin current / s / ⁇ — /j, is the difference of currents with spin along and opposite to the spin polarization direction
  • z is the unit vector perpendicular to the interface
  • P SHE is the spin Hall injection efficiency which is the ratio of magnitude of transverse spin current to lateral charge current
  • w is the width of the magnet
  • t is the thickness of the SHE Interconnect 122
  • S f is the spin flip length in SHE Interconnect 122
  • ⁇ 5 ⁇ is the spin Hall angle for SHE Interconnect 122 to free ferromagnetic layer interface.
  • the injected spin angular momentum responsible for the spin torque given by:
  • perpendicularly magnetized free magnet layer coupled to SOC interconnect 122 can only be switched inefficiently and only in the presence of a significant external magnetic field.
  • perpendicularly magnetized free magnet refers to a magnet having magnetization which is perpendicular to the plane of the magnet as opposed to in-plane magnet that has
  • the energy-delay trajectory of SHE and MTJ devices are compared for in-plane magnet switching as the applied write voltage is varied.
  • the energy-delay relationship (for in-plane switching) can be written as:
  • # wr ; te is the write resistance of the device (resistance of SHE electrode or resistance of MTJ-P or MTJ-AP, where MTJ-P is a MTJ with parallel magnetizations while MTJ-AP is an MTJ with anti-parallel magnetizations, ⁇ 0 is vacuum permeability, e is the electron charge.
  • the equation shows that the energy at a given delay is directly proportional to the square of the Gilbert damping a.
  • ⁇ 0 the characteristic time
  • Curves 221 and 222 show write energy-delay conditions using traditional MTJ devices without SHE material.
  • curve 221 shows the write energy-delay condition causes by switching a magnet from anti-parallel (AP) to parallel (P) state
  • curve 222 shows the write energy- delay condition causes by switching a magnet from P to AP state
  • Curves 222, 223, and 224 show write energy-delay conditions of an MTJ with SHE material.
  • write energy- delay conditions of an MTJ with SHE material is much lower than write energy-delay conditions of an MTJ without SHE material. While write energy-delay of an MTJ with SHE material improves over a traditional MTJ without SHE material, further improvement in write energy-delay is desired.
  • Fig. 2C illustrates plot 230 comparing reliable write times for spin Hall
  • Waveform 231 is the write time for in-plane STT-MTJ
  • waveform 232 is the write time for PMA STT- MTJ
  • waveform 234 is the write time for spin Hall SHE-MTJ. All the cases considered in Fig. 2C assume a 30 X 60 nm magnet with 40 kT energy barrier and 3.5 nm SHE electrode thicknesses.
  • the energy-delay trajectories of the devices are obtained assuming a voltage sweep from 0-0.7 V in accordance to voltage restrictions of scaled CMOS.
  • the energy-delay trajectory of the SHE-MTJ devices exhibits broadly two operating regions A) Region 1 where the energy-delay product is approximately constant M Ve
  • the energy-delay trajectory of the STT-MTJ devices is limited with a minimum delay of 1 ns for in-plane devices at 0.7 V maximum applied voltage, the switching energy for P-AP and AP-P are in the range of 1 pJ/write.
  • the energy-delay trajectory of SHE-MTJ (in-plane anisotropy) devices can enable switching times as low as 20 ps ( ⁇ -W with 0.7 V, 20 fj/bit) or switching energy as small as 2 fj ( ⁇ -W with 0.1 V, 1.5 ns switching time).
  • Fig. 3A illustrates a three dimensional (3D) view 300 of a device having an magnetic junction stack with a magnet having perpendicular magnetic anisotropy (PMA) coupled to an anti-ferromagnet (AFM) based interconnect electrode exhibiting spin orbit coupling effects and exchange bias, according to some embodiments of the disclosure.
  • Fig. 3B illustrates a corresponding top view of the device of Fig. 3A, according to some embodiments of the disclosure. It is pointed out that those elements of Figs. 3A-B having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • Device 300 comprises a magnetic junction (e.g., MTJ 321 or a spin valve) which couples to an interconnect electrode 322 exhibiting spin orbit effects and exchange bias.
  • a magnetic junction e.g., MTJ 321 or a spin valve
  • Other materials and layers are similar as those of device 100.
  • the SAF, AFM, and metal interconnects 123 are the same as those described with reference to 100 of Fig. 1.
  • device 300 illustrates a geometry of a 3 -terminal memory cell with an AFM interconnect electrode 322 exhibiting spin orbit effects and exchange bias.
  • the AFM electrode 322 exhibiting spin orbit effects and exchange bias provides a write mechanism while the PMA based MTJ provides the read-output mechanism.
  • MTJ 321 comprises free perpendicular magnet layer
  • FM1 321a layer 121b (e.g., MgO tunneling oxide for MTJ, or metal layer for spin valve), a fixed perpendicular magnet (FM2) 121c with Synthetic Anti-Ferro-magnet (SAF) 121d and 121e- CoFe/Ru based, and Anti-Ferromagnet (AFM) 121f.
  • SAF Synthetic Anti-Ferro-magnet
  • AFM Anti-Ferromagnet
  • the SAF layer 121d/e allows for cancelling the dipole fields around the free layer.
  • the magnets of various embodiments can be ferromagnets or paramagnets.
  • AFM layer or electrode 322 electrode exhibiting spin orbit effects and exchange bias comprises a material which includes one of: Mn, Pt, Ir, Pd, or Fe.
  • the AFM material is a quasi-two-dimensional triangular AFM including Ni(i- X )M x Ga2S4, where 'M' includes one of: Mn, Fe, Co or Zn.
  • the AFM material is one of PtMn, IrMn, PdMn, FeMn, or AFM material alloyed with 5d elements of the Periodic Table.
  • the exchange bias sets an initial magnetization direction of the magnet coupled to AFM electrode 322, and then the SHE from AFM 322 generates a spin current which switches the magnetization set by exchange bias.
  • the switching allows for changing the memory state of the device having the MTJ 321 and AFM electrode 322, in accordance with some embodiments.
  • the free perpendicular magnet layer 321a of the magnetic junction (e.g., spin valve or MTJ 321), which is coupled to interface AFM electrode 322 exhibiting spin orbit effects and exchange bias, comprises one or a combination of materials which include one of a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, and Yttrium Iron Garnet (YIG).
  • the Heusler alloy which includes one of: CiteMnAl, Cu 2 MnIn, Cu 2 MnSn, Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa
  • the free perpendicular magnet layer 321a of the magnetic junction (e.g., spin valve or MTJ 321) is formed of a stack of materials, wherein the materials for the stack include one or more of: Co and Pt; Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO; MgO, CoFeB, V, CoFeB, and MgO; MgO, CoFeB, Mo, CoFeB, and MgO; Mn x Ga y ; Materials with Llo symmetry; or materials with tetragonal crystal structure.
  • the materials for the stack include one or more of: Co and Pt; Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO; MgO, CoFeB
  • Llo is a crystallographic derivative structure of a FCC structure and has two of the faces occupied by one type of atom and the corner and the other face occupied with the second type of atom.
  • phases with the Llo structure are ferromagnetic the
  • the magnetization vector usually is along the [0 0 1] axis of the crystal.
  • materials with Llo symmetry include CoPt and FePt.
  • materials with tetragonal crystal structure and magnetic moment are Heusler alloys such as CoFeAl, MnGe, MnGeGa, and MnGa.
  • the free magnet layer of the magnetic junction e.g., spin valve or MTJ 321) is formed of a single layer of one or more materials.
  • the single layer is formed of MnGa.
  • the fixed perpendicular magnet layer 121c is formed with interfacial PMA, multi -interface PMA, magnetic crystalline anisotropy or multi-layer PMA.
  • the free perpendicular magnet layer 121a is formed with interfacial PMA, multi-interface PMA, magnetic crystalline anisotropy or multi-layer PMA.
  • TMR is used for memory readout from PMA-MTJ 321.
  • the magnet with PMA is formed of a stack of materials, wherein the materials for the stack include one or more of: Co and Pt; Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO; MgO, CoFeB, V, CoFeB, and MgO; MgO, CoFeB, Mo, CoFeB, and MgO; Mn x Ga y ; Materials with Llo symmetry; and materials with tetragonal crystal structure.
  • the magnet with PMA is formed of a single layer of one or more materials.
  • the single layer comprises Mn and Ga.
  • the signal layer comprises MnGa.
  • the perpendicular magnets of layer 321a of the magnetic junction are formed with a sufficiently high anisotropy (indicated by an effective anisotropy magnetic field Hk) and sufficiently low saturated magnetization (M s ) to increase injection of spin currents.
  • Saturated magnetization Ms is generally the state reached when an increase in applied external magnetic field H cannot increase the magnetization of the material.
  • sufficiently low M s refers to M s less than 200 kA/m (kilo- Amperes per meter).
  • Anisotropy Hk generally refers to the material property which is directionally dependent. Materials with high Hk are materials with material properties that are highly directionally dependent.
  • sufficiently high Hk in context of Heusler alloys is considered to be greater than 2000 Oe (Oersted).
  • the magnetic cell is written by applying a charge current via the AFM interconnect 322 (or electrode).
  • the exchange bias from AFM 322 is along the plane of electrode 322 and the plane of free magnet layer 321a in the direction of current flow (-/+y). This exchange bias is applied to the free magnet layer 321a with PMA.
  • the exchange bias causes the free magnet layer 321 a with PMA to have a canted state which is switched to another phase by the spin current flow in the z-direction.
  • the direction of the magnetic writing is decided by the direction of the applied charge current. Positive currents (along +y) produce a spin injection current with transport direction (along +z) and spins pointing to (+x) direction. Negative currents (along -y direction) produce a spin injection current with transport direction (along -z direction) and spins pointing to (-x) direction.
  • Fig. 4 illustrates cross-section 400 of AFM 322 based interconnect with perpendicular up and down spins generated from a flow of charge current, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 4 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • positive charge current (e.g., current in the +x direction) represented by J c produces spin-up (e.g., in the +z direction) polarized current 401 and spin- down (e.g., in the -z direction) polarized current 402 in the direction normal to interconnect 322.
  • the generated current is expressed as a tensor product instead of a cross product:
  • J s is the density of the spin current 401/402 polarized along the z-axis and propagating along z-axis
  • 0 yzz _ RBE is the effective Rashba-Bychkov effect ratio relating the spin polarized current density with the charge current density along the 'y' direction
  • ] c is the charge current density.
  • the injected spin current I s in turn produces spin torque to align the free perpendicular magnet in substantially +z or -z direction.
  • An auxiliary factor for aligning the free perpendicular magnet in substantially +z or -z direction is exchange bias from AFM 322 which produces an additional torque which is non-zero even if it is aligned to the direction of the spin polarized current.
  • the exchange bias in AFM 322 causes the free perpendicular magnet 321a to have canted magnetization.
  • exchange bias acts like an external magnetic field (e.g., ⁇ _ ⁇ 3 in Fig. 3B) applied to the free perpendicular magnet 321a with PMA which causes the magnetization of free perpendicular magnet 321a to not be exactly along the +/- z direction, but at an angle along the +/- z-direction.
  • the amount of exchange bias depends on the material properties of AFM 322.
  • the exchange bias can be formed and adjusted depending on the type of annealing (e.g., temperature and duration of heating).
  • the injected spin current / s switches the canted magnetization.
  • the direction of switching of the canted magnetization depends on the direction of spin polarization.
  • P RBE (/ ⁇ — /j, )/( / ⁇ + /j, ) is the Rashba Bychkov effect injection efficiency which is the ratio of magnitude of transverse spin current to lateral charge current
  • w is the width of the magnet
  • t is the thickness of the Interconnect 322
  • X S f is the spin flip length in
  • Interconnect 322 0 yzz _ RBE is the Rashba-Bychkov effect ratio for Interconnect 322 to free magnetic layer interface.
  • the injected spin torque is given by:
  • Various embodiments describe a highly efficient transduction method and associated apparatus for converting spin currents to charge currents.
  • spin-to-charge conversion is achieved via spin orbit interaction in AFM 322 in metallic interfaces (e.g., using Inverse Rashba-Bychkov Effect) where a spin current injected from an input magnet produces a charge current.
  • Table 1 summarizes transduction mechanisms for converting spin current to charge current and charge current to spin current for bulk materials and interfaces.
  • Table 1 Transduction mechanisms for Spin to Charge and Charge to Spin Conversion due to Spin-Orbit
  • the layer 322 contains materials exhibiting Rashba-
  • layer 322 comprises a hetero-structure with Cu, Ag, Al, or Au. In some embodiments it comprises a material which includes one of: ⁇ -Ta, ⁇ -W, W, Pt, Cu doped with Iridium, Cu doped with Bismuth, or Cu doped an element of 3d, 4d, 5d, 4f, or 5f of periodic table groups.
  • Fig. 5A illustrates cross-section 500 of a layer comprising the AFM electrode
  • Fig. 5B illustrates a crystal structure 520 of the AFM electrode 501/322 with spins pointing out, according to some embodiments of the disclosure.
  • material for AFM electrode 501/322 is IrMm.
  • the top structure is of a body centered cube (BCC) of Fe or CoFe with one lattice point in the center (e.g., 521b) of the unit cell in addition to the eight corner points (e.g., 521a).
  • BCC body centered cube
  • AFM electrode 322 allows for propagation of spin current along z-direction (e.g., perpendicular to the plane of electrode 322) which applies spin torque to PMA free magnet 321a. This spin torque to PMA free magnet 321a switches the canted magnetization of PMA free magnet 321a, where the canted magnetization is caused by the exchange bias from AFM electrode 322.
  • AFM electrode 322 is a quasi-two-dimensional triangular AFM including Ni(i- x)M x Ga2S4, where 'M' includes one of: Mn, Fe, Co or Zn.
  • FIGs. 6A-C illustrate switching of magnetization by AFM electrode 322 using current pulse along the y-direction, according to some embodiments. It is pointed out that those elements of Figs. 6A-C having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • the process of switching of magnetization by AFM electrode 322 is illustrated by three scenarios labeled 600, 620, and 630, respectively.
  • charge current I C h through AFM electrode 322 is zero (e.g.,
  • magnetization of PMA magnet 321a to be canted as shown by magnetization 602.
  • the presence of the exchange bias allows for faster switching of magnetization 602 upon application of spin torque.
  • Ich is greater than zero, and along the +y direction.
  • the charge current will cause spin polarization along the +/- x direction with spin current flowing in the +z direction.
  • the spin current and spin polarization applies spin torque to the nanomagnets of PMA magnet 321 causing the magnetization to move from magnetization 602 to magnetization 622.
  • the spin torque induced magnetization directs itself towards the -z direction.
  • the charge current I C h through AFM electrode 322 is zero, again.
  • the charge current pulse is set back to zero.
  • the spin torque is removed which causes the magnetization of PMA magnet to reach a new stable state with magnetization 633.
  • the magnetic junction 321 can then use TMR (tunneling magneto resistance) effect to read out the state stored in the magnetic layer 321a. Resistance in TMR is dependent on the angle between magnetization 602-633 in the free (switchable) magnetic layer 321a and the magnetization of the fixed magnetic layer 121c in Fig. 3A. Referring back to Fig. 6C, the angle between magnetization 602 and magnetization 633 is sufficiently close to 180 degrees. In other words, magnetization 602 is sufficiently close to +z axis to approximate minimum magnetoresistance, and magnetization 633 is sufficiently close to -z axis to approximate maximum magnetoresistance.
  • Figs. 7A-C illustrate switching of magnetization by AFM electrode using current pulse along the +y-direction and different exchange bias than exchange bias of AFM electrode of Figs. 6A-C, according to some embodiments. It is pointed out that those elements of Figs. 7A-C having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • the exchange bias for AFM electrode 322 is programmed to be different from exchange bias exerted by AFM electrode 322 of Figs. 6A-C.
  • the material for AFM 322 is annealed to have a different exchange bias. This different exchange bias is indicated by the in-plane exchange bias 701.
  • charge current I C h through AFM electrode 322 is zero (e.g.,
  • magnetization of PMA magnet 321 to be canted as show by magnetization 702.
  • the presence of the exchange bias allows for faster switching of magnetization 602 upon application of spin torque.
  • Ich is greater than zero, and along the +/-y direction.
  • the charge current will cause spin polarization along the +/- x direction (for +/-y direction of charge current) with spin current flowing in the +z direction.
  • the spin current and spin polarization applies spin torque to the nanomagnets of PMA magnet 321a causing the magnetization to move from magnetization 702 to magnetization 722.
  • the spin torque induced magnetization directs itself towards +z direction.
  • the charge current I C h through AFM electrode 322 is zero, again.
  • the charge current pulse is set back to zero.
  • the spin torque is removed which causes the magnetization of PMA magnet to establish a new stable magnetization as magnetization 733.
  • the magnetic junction 321 can then use TMR
  • TMR tunnel magneto resistance
  • Figs. 8A-C illustrate switching of magnetization by AFM electrode using current pulse along the -y-direction, according to some embodiments. It is pointed out that those elements of Figs. 8A-C having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such. Compared to scenarios of Figs. 6A-C, here the charge current of the charge current pulse flows along -y direction instead of +y direction. The direction of flow of charge current changes the starting magnetization direction of PMA magnet 321a.
  • charge current I C h through AFM electrode 322 is zero (e.g.,
  • the exchange bias 601 along the plane of AFM electrode 322 causes the magnetization of PMA magnet 321a to be canted as showing by magnetization 602.
  • the presence of the exchange bias allows for faster switching of magnetization 602 upon application of spin torque.
  • the charge current will cause spin polarization along the +/- x direction with spin current flowing in the +z direction.
  • the spin current and spin polarization applies spin torque to the nanomagnets of PMA magnet 321a causing the magnetization to move from magnetization 602 to magnetization 822.
  • the spin torque induced magnetization directs itself towards -z direction.
  • the charge current I C h through AFM electrode 322 is zero, again.
  • the charge current pulse is set back to zero.
  • the spin torque is removed which causes the magnetization of PMA magnet to establish a new stable magnetization as magnetization 833.
  • magnetization 833 has substantially shifted by 60 degrees.
  • the magnetic junction 321 can then use TMR (tunneling magneto resistance) effect to read out the state stored in the magnetic layer 321a. Resistance in TMR is dependent on the angle between magnetization 602-833 in the free (switchable) magnetic layer 321a and the magnetization of the fixed magnetic layer 121c.
  • Angle between magnetization 602 and magnetization 833 is sufficiently close to 180 degrees. In other words, magnetization 602 is sufficiently close to +z axis to approximate minimum magnetoresistance, and magnetization 833 is sufficiently close to -z axis to approximate maximum magnetoresistance.
  • Fig. 9A illustrates plot 900 showing evolution of magnetization in the free layer 321a vs. time during an event of switching the magnet with PMA using AFM layer, according to some embodiments of the disclosure.
  • Fig. 9B illustrates magnetization trajectory, plot 920, on a sphere of directions for the same situation as in Fig. 9A, according to some embodiments of the disclosure.
  • Plot 900 shows switching of spin orbit torque device with PMA.
  • waveforms 901, 902, and 902 represent the magnetization projections on axes x, y, and z, respectively.
  • the magnet starts with z-magnetization of -1.
  • Positive spin orbit torque (SOT) is applied from 5 to 50 ns (nanoseconds). It leads to switching z- magnetization to 1.
  • negative SOT is applied between 120 ad 160ns. It leads to switching z-magnetization to 1. This illustrates change of magnetization in response to write charge current of certain polarity.
  • Fig. 9C illustrates plot 930 showing evolution of magnetization in the free layer 321a vs. time during an event of switching the magnet with PMA using AFM layer, according to some embodiments of the disclosure.
  • Fig. 9D illustrates magnetization trajectory, plot 920, on a sphere of directions for the same situation as in Fig. 9C, according to some embodiments of the disclosure.
  • waveforms 931 , 932, and 932 represent the magnetization projections on axes x, y, and z, respectively.
  • SOT negative spin orbit torque
  • z- magnetization remains close to -1. This illustrates persistence of magnetization in response to write charge current of opposite polarity.
  • Fig. 10 illustrates a cross-section 1000 of a die layout having the device of
  • Fig. 3A formed in metal 3 (M3) and metal 2 (M2) layer regions, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 10 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • Cross-section 1000 illustrates an active region having a transistor MN comprising diffusion region 1001 , a gate terminal 1002, drain terminal 1004, and source terminal 1003.
  • the source terminal 1003 is coupled to SL (source line) via poly or via, where the SL is formed on Metal 0 (M0).
  • the drain terminal 1004 is coupled to MOa (also metal 0) through via 1005.
  • the drain terminal 1004 is coupled to interface normal spin orbit material based interconnect 322 through Via 0-1 (e.g., via connecting metal 0 to metal 1 layers), metal 1 (Ml), Via 1-2 (e.g., via connecting metal 1 to metal 2 layers), and Metal 2 (M2).
  • the magnetic junction (e.g., MTJ 321 or spin valve) is formed in the metal 3 (M3) region.
  • the perpendicular free magnet layer of the magnetic junction (MTJ 321 or spin valve) couples to AFM interconnect 322.
  • the fixed magnet layer of magnetic junction couples to the bit-line (BL) via AFM interconnect 322 through Via 3-4 (e.g., via connecting metal 4 region to metal 4 (M4)).
  • bit-line is formed on M4.
  • transistor MN is formed in the front end of the die while the AFM interconnect 322 is located in the back end of the die.
  • the AFM interconnect 322 is located in the back end metal layers or via layers for example in Via 3.
  • the electrical connectivity to the device is obtained in layers M0 and M4 or Ml and M5 or any set of two parallel interconnects.
  • Fig. 11 illustrates cross-section 1100 of a die layout having the device of Fig.
  • the magnetic junction e.g., MTJ 321 or spin valve
  • the AFM interconnect 322 is formed in the metal 1 region.
  • Fig. 12 illustrates a spin wave transconductance scheme 1200 using the device of Fig. 3A, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 12 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • scheme 1200 comprises an input AFM interconnect
  • SOC layer 1232 is coupled to a spin wave generator (e.g., current source 1204) which has its terminals coupled to two opposite ends of SOC 1232.
  • the spin wave generator comprises at least one of: current source, an antenna, TMR device, or a magnetoelectric device.
  • ISOC layer 1233 is coupled to a spin wave detector
  • both SOC 1232 and ISOC 1233 are AFM interconnects.
  • one end of spin wave interconnect 1231 is coupled to middle region of SOC 1232.
  • the other end of spin wave interconnect 1231 is coupled to a middle region of ISOC 1233.
  • AFM interconnect 1232 comprises layers which are the same as those described with reference to interconnect 322.
  • AFM interconnect 1233 comprises of materials exhibiting inverse spin orbit coupling (ISOC) such as one of inverse SHE (ISHE) or inverse Rashba-Bychkov effect (IRBE).
  • ISOC inverse spin orbit coupling
  • SOC layer 1232 and ISOC layer 1233 are formed of the same material, but exhibit different functions.
  • SOC layer 1232 converts charge current from IAC 1204 into perpendicular spin currents (e.g., perpendicular to the plane of spin wave interconnect 1231).
  • spin wave generator 1204 can be a current source, an antenna, or any other suitable device.
  • spin wave interconnect 1231 is a ferromagnet (FM).
  • FM 1231 has perpendicular magnetic anisotropy.
  • FM 1231 is formed of the same materials as the free perpendicular magnet of MTJ 321.
  • the current through SOC layer 1232 generates spin currents pointing perpendicular to the plan of SOC layer 1232. These spin currents cause spin waves (or domain walls) to be generated in FM 1231.
  • the spin waves propagate along the length of FM 1231 towards the other end of FM 1231.
  • the spin wave is converted into charge current by inverse Rashba-Bychkov effect of ISOC layer 1233. This charge current causes a potential difference between the two ends of ISOC layer 1233.
  • the potential difference is detected by a spin wave detector (e.g., voltage source 1205).
  • multiple domain walls or spin waves are generated by different spin wave generating sources, and these spin waves interact with one another to generate a resultant spin wave.
  • This resultant spin wave is a function of the majority of the spin waves, in accordance with some embodiments.
  • the resultant spin wave is then converted into charge current and detected by a spin wave detector.
  • Majority gate 1300 illustrates three inputs (however, the embodiments can be expanded to any odd number of inputs greater than three). These three inputs are SOC 1322a coupled to a spin wave generator 1304a, SOC 1322b coupled to a spin wave generator 1304b, and SOC 1322c coupled to a spin wave generator 1304c.
  • SOC 1322a is coupled to FM based spin wave interconnect 1323a (or simply FM 1323a).
  • SOC 1322b is coupled to FM based spin wave interconnect 1323b (or simply FM 1323b).
  • SOC 1322c is coupled to FM based spin wave interconnect 1323c (or simply FM 1323c).
  • spin wave interconnects 1323a, 1323b, and 1323c form a 'T' junction.
  • spin wave wave interconnects 1323a, 1323b, and 1323c form a 'T' junction.
  • spin wave wave interconnects 1323a, 1323b, and 1323c form a 'T' junction
  • interconnects 1323a, 1323b, and 1323c form a 'Y' junction.
  • the junction point is coupled to another FM spin wave interconnect 1323d (or simply FM 1323d).
  • FM 1323d is coupled to ISOC 1324 which is coupled to a spin wave detector 1305.
  • Fig. 14 illustrates plot 1400 showing improvement in energy-delay product using the device of Fig. 3A compared to the device of Fig. 1, in accordance with some embodiments of the disclosure. It is pointed out that those elements of Fig. 14 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • x-axis is Write Energy (in fj)
  • y-axis is Delay (in ns).
  • two the energy-delay trajectories are compared as write voltage is varied— 1401 which is the energy-delay trajectory of device 100 and 1402 is the energy delay trajectory of device 300.
  • Plot 1400 illustrates that device 300 provides a shorter (i.e., improved) energy-delay product than device 100.
  • Fig. 15 illustrates method flowchart 1500 of generating and detecting spin waves using AFM electrode 322, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 15 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • SOC 1232 and SOC 1322a For example, charge current from IAC 1204 or IAC 1304 is passed through SOC 1232 and SOC 1322a, respectively.
  • the AFM layer generates spin currents perpendicular to its plane.
  • a first spin wave is generated by AFM material layer (e.g., SOC 1232 and SOC 1322a), where the first spin wave is to propagate through a first FM adjacent to the interface normal spin orbit material layer at one end of the first FM (e.g., spin wave interconnect FM 1221 and spin wave interconnect FM 1323a).
  • a voltage detector is applied across two ends along a length of the inverse interface normal spin orbit material layer (e.g., ISOC 1233 and ISOC 1324).
  • voltage detector VDC 1205 is applied across ISOC 1333 layer to detect the charge generated by ISOC 1233.
  • the method further comprises generating a second spin wave which propagates through a second FM, wherein the second FM is adjacent to the AFM layer (that provides inverse SOC) at one end of the second FM.
  • the method comprises generating a third spin wave which propagates through a third FM, wherein the third FM is adjacent to the AFM material layer (that provides inverse SOC) at one end of the third FM.
  • detecting the voltage across the AFM material layer comprises: applying a voltage detector across two ends along a length of the AFM material layer, and determining a logic value which is according to the voltage and the first, second, and third spin waves.
  • microcontrollers programmable logic devices, or other processing means.
  • the processing operations performed by processor 1610 include the execution of an operating platform or operating system on which applications and/or device functions are executed.
  • the processing operations include operations related to I/O (input/output) with a human user or with other devices, operations related to power management, and/or operations related to connecting the computing device 1600 to another device.
  • the processing operations may also include operations related to audio I/O and/or display I/O.
  • computing device 1600 includes audio subsystem
  • Audio functions can include speaker and/or headphone output, as well as microphone input. Devices for such functions can be integrated into computing device 1600, or connected to the computing device 1600. In one embodiment, a user interacts with the computing device 1600 by providing audio commands that are received and processed by processor 1610.
  • computing device 1600 comprises display subsystem
  • computing device 1600 comprises peripheral connections 1680.
  • Peripheral connections 1680 include hardware interfaces and connectors, as well as software components (e.g., drivers, protocol stacks) to make peripheral connections.
  • the computing device 1600 could both be a peripheral device ("to" 1682) to other computing devices, as well as have peripheral devices ("from” 1684) connected to it.
  • the computing device 1600 commonly has a "docking" connector to connect to other computing devices for purposes such as managing (e.g., downloading and/or uploading, changing, synchronizing) content on computing device 1600.
  • a docking connector can allow computing device 1600 to connect to certain peripherals that allow the computing device 1600 to control content output, for example, to audiovisual or other systems.
  • Example 5 includes all features of example 1, wherein the AFM material is a quasi-two-dimensional triangular AFM including Ni(i- X )M x Ga2S4, where 'M' includes one of: Mn, Fe, Co or Zn.
  • Example 12 is an apparatus which comprises: a magnet layer having perpendicular magnetic anisotropy (PMA); and a layer including an AFM material that exhibits exchange bias and spin Hall effect (SHE), the layer being adjacent to one end of the magnet layer.
  • PMA perpendicular magnetic anisotropy
  • SHE spin Hall effect
  • Example 16 is according to any one of examples 12 to 15, wherein the magnet layer comprises one or a combination of materials which include one of: a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, or Yttrium Iron Garnet (YIG).
  • a Heusler alloy Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, or Yttrium Iron Garnet (YIG).
  • YIG Yttrium Iron Garnet
  • Example 17 includes all features of example 16, wherein the Heusler alloy is a material which includes one of: Cu 2 MnAl, Cu 2 MnIn, Cu 2 MnSn, Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa Co 2 MnAl, Co 2 MnSi, Co 2 MnGa, Co 2 MnGe, Pd 2 MnAl, Pd 2 MnIn, PdJVInSn, PdJVInSb, Co 2 FeSi, Co 2 FeAl, Fe 2 VAl, Mn 2 VGa, Co 2 FeGe, MnGa, or MnGaRu.
  • the Heusler alloy is a material which includes one of: Cu 2 MnAl, Cu 2 MnIn, Cu 2 MnSn, Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa Co 2 MnAl,
  • Example 19 includes all features of example 12, wherein the AFM material is to generate spin current polarized in the plane of the device, and wherein the spin current is to propagate perpendicular to the plane of the device.
  • Example 20 includes all features of example 12, wherein the AFM material includes one of: Mn, Pt, Ir, Pd, or Fe.
  • Example 21 includes all features of example 12, wherein the AFM material is a quasi-two-dimensional triangular AFM including Ni(i- X )M x Ga2S4, where 'M' includes one of: Mn, Fe, Co or Zn.
  • Example 22 includes all features of example 12, wherein the magnet layer comprises a single layer of one or more materials.
  • Example 23 includes all features of example 22, wherein the single layer includes: Mn and Ga.
  • Example 24 is a system which comprises: : a memory; a processor coupled to the memory, the processor having a spin wave switch, which comprises an apparatus according to any one of apparatus examples 1 to 11 ; and a wireless interface to allow the processor to communicate with another device.
  • Example 25 is a system which comprises: a memory; a processor coupled to the memory, the processor having an apparatus according to any one of apparatus examples 12 to 23; and a wireless interface to allow the processor to communicate with another device.
  • Example 26 is a method which comprises: forming a magnetic junction including a free magnet layer which has perpendicular magnetic anisotropy (PMA), wherein the free magnet layer has anisotropy axis perpendicular to a plane of a device; and forming an interconnect including an anti-ferromagnetic (AFM) material to generate an exchange coupling field along the plane of the device, wherein the interconnect is adjacent to the free magnet layer.
  • PMA perpendicular magnetic anisotropy
  • AFM anti-ferromagnetic
  • Example 27 includes all features of example 26, wherein the AFM material is to generate spin Hall effect (SHE).
  • Example 28 includes all features of example 26, and comprises generating spin current polarized in the plane of the device, and wherein the spin current is to propagate perpendicular to the plane of the device.
  • Example 29 is according to any one of examples 26 to 28, wherein the AFM material includes one of: Mn, Pt, Ir, Pd, or Fe.
  • Example 30 includes all features of example 26, wherein the AFM material is a quasi-two-dimensional triangular AFM including Ni(i- X )M x Ga2S4, where 'M' includes one of: Mn, Fe, Co or Zn.
  • Example 33 includes all features of example 32, wherein the Heusler alloy includes one of: Cu 2 MnAl, Cu 2 MnIn, Cu 2 MnSn, Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa Co 2 MnAl, Co 2 MnSi, Co 2 MnGa, Co 2 MnGe, Pd 2 MnAl, Pd 2 MnIn, Pd 2 MnSn, Pd 2 MnSb, Co 2 FeSi, Co 2 FeAl, Fe 2 VAl, Mn 2 VGa, Co 2 FeGe, MnGa, or MnGaRu.
  • the Heusler alloy includes one of: Cu 2 MnAl, Cu 2 MnIn, Cu 2 MnSn, Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa Co 2 MnAl, Co 2 MnSi, Co 2
  • Example 34 includes all features of example 26, wherein the free magnet layer comprises a stack of materials, wherein the materials for the stack include one of: Co and Pt; Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO; MgO, CoFeB, V, CoFeB, and MgO; MgO, CoFeB, Mo, CoFeB, and MgO; or Mn x Ga y .
  • the materials for the stack include one of: Co and Pt; Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO; MgO, CoFeB, V, CoFeB, and MgO; MgO, CoFeB, Mo, CoFeB, and MgO; or Mn x
  • Example 35 includes all features of example 26, wherein the free magnet layer comprises a single layer of one or more materials.
  • Example 36 includes all features of example 35, wherein the single layer includes: Mn and Ga.
  • Example 37 is a method which comprises: forming a magnet layer having perpendicular magnetic anisotropy (PMA); and forming a layer including an AFM material that exhibits exchange bias and spin Hall effect (SHE), the layer being adjacent to one end of the magnet layer.
  • PMA perpendicular magnetic anisotropy
  • SHE spin Hall effect
  • Example 38 includes all features of example 37, and comprises coupling a spin wave generator adjacent to the layer including the AFM material.
  • Example 41 is according to any one of examples 37 to 40, wherein the magnet layer comprises one or a combination of materials which include one of: a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, or Yttrium Iron Garnet (YIG).
  • a Heusler alloy Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, or Yttrium Iron Garnet (YIG).
  • Example 42 includes all features of example 41, wherein the Heusler alloy is a material which includes one of: Cu 2 MnAl, Cu 2 MnIn, Cu 2 MnSn, Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa Co 2 MnAl, Co 2 MnSi, Co 2 MnGa, Co 2 MnGe, Pd 2 MnAl, Pd 2 MnIn, PdJVInSn, PdJVInSb, Co 2 FeSi, Co 2 FeAl, Fe 2 VAl, Mn 2 VGa, Co 2 FeGe, MnGa, or MnGaRu.
  • the Heusler alloy is a material which includes one of: Cu 2 MnAl, Cu 2 MnIn, Cu 2 MnSn, Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa Co 2 MnAl
  • Example 43 includes all features of example 26, wherein the magnet layer comprises a stack of materials, and wherein the materials for the stack include one of: Co and Pt; Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO; MgO, CoFeB, V, CoFeB, and MgO; MgO, CoFeB, Mo, CoFeB, and MgO; or Mn x Ga y .
  • the materials for the stack include one of: Co and Pt; Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO; MgO, CoFeB, V, CoFeB, and MgO; MgO, CoFeB, Mo, CoFeB, and MgO; or Mn x
  • Example 45 includes all features of example 26, wherein the AFM material includes one of: Mn, Pt, Ir, Pd, or Fe.
  • Example 46 includes all features of example 26, wherein the AFM material is a quasi-two-dimensional triangular AFM including Ni(i- X )M x Ga2S4, where 'M' includes one of: Mn, Fe, Co or Zn.
  • Example 47 includes all features of example 26, wherein forming the magnet layer comprises forming a single layer of one or more materials.

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  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
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Abstract

L'invention concerne un appareil qui comprend : une jonction magnétique possédant une couche d'aimant libre qui présente une anisotropie magnétique perpendiculaire (AMP), la couche d'aimant libre comportant un axe perpendiculaire à un plan d'un dispositif ; et une interconnexion comportant un matériau antiferromagnétique (AFM) pour générer un champ de couplage d'échange le long du plan du dispositif, l'interconnexion étant adjacente à la couche d'aimant libre.
PCT/US2017/040473 2017-06-30 2017-06-30 Mémoire à effet hall de spin à base d'anisotropie à aimant perpendiculaire, utilisant l'effet spin-orbite et le champ d'échange WO2019005147A1 (fr)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113889163A (zh) * 2021-12-07 2022-01-04 北京芯可鉴科技有限公司 翻转概率可控的随机磁隧道结器件及应用方法
US11575083B2 (en) 2018-04-02 2023-02-07 Intel Corporation Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory
US11665979B2 (en) * 2019-12-09 2023-05-30 Samsung Electronics Co., Ltd. Magnetic junctions having enhanced tunnel magnetoresistance and utilizing heusler compounds

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160042778A1 (en) * 2013-06-21 2016-02-11 Intel Corporation Mtj spin hall mram bit-cell and array
US20160043301A1 (en) * 2014-08-06 2016-02-11 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions including heusler multilayers
US20160380188A1 (en) * 2015-06-25 2016-12-29 International Business Machines Corporation Perpendicular magnetic anisotropy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memory
US20170125078A1 (en) * 2015-10-29 2017-05-04 HGST Netherlands B.V. Three Terminal Spin Orbit Torque Memory Cell with In-Stack MAGNETIC LAYER THAT PROVIDES Magnetic Bias Field AND SPIN ORBIT TORQUE VIA Anomalous Hall Effect
WO2017105396A1 (fr) * 2015-12-14 2017-06-22 Intel Corporation Appareil à réseau neuronal cellulaire oscillant magnétoélectrique et procédé

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20160042778A1 (en) * 2013-06-21 2016-02-11 Intel Corporation Mtj spin hall mram bit-cell and array
US20160043301A1 (en) * 2014-08-06 2016-02-11 Samsung Electronics Co., Ltd. Method and system for providing magnetic junctions including heusler multilayers
US20160380188A1 (en) * 2015-06-25 2016-12-29 International Business Machines Corporation Perpendicular magnetic anisotropy free layers with iron insertion and oxide interfaces for spin transfer torque magnetic random access memory
US20170125078A1 (en) * 2015-10-29 2017-05-04 HGST Netherlands B.V. Three Terminal Spin Orbit Torque Memory Cell with In-Stack MAGNETIC LAYER THAT PROVIDES Magnetic Bias Field AND SPIN ORBIT TORQUE VIA Anomalous Hall Effect
WO2017105396A1 (fr) * 2015-12-14 2017-06-22 Intel Corporation Appareil à réseau neuronal cellulaire oscillant magnétoélectrique et procédé

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11575083B2 (en) 2018-04-02 2023-02-07 Intel Corporation Insertion layer between spin hall effect or spin orbit torque electrode and free magnet for improved magnetic memory
US11665979B2 (en) * 2019-12-09 2023-05-30 Samsung Electronics Co., Ltd. Magnetic junctions having enhanced tunnel magnetoresistance and utilizing heusler compounds
CN113889163A (zh) * 2021-12-07 2022-01-04 北京芯可鉴科技有限公司 翻转概率可控的随机磁隧道结器件及应用方法
CN113889163B (zh) * 2021-12-07 2022-03-01 北京芯可鉴科技有限公司 翻转概率可控的随机磁隧道结器件及应用方法

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