WO2019125387A1 - Mémoire à base de couplage spin-orbite à structure d'aimant libre étendue - Google Patents

Mémoire à base de couplage spin-orbite à structure d'aimant libre étendue Download PDF

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Publication number
WO2019125387A1
WO2019125387A1 PCT/US2017/067104 US2017067104W WO2019125387A1 WO 2019125387 A1 WO2019125387 A1 WO 2019125387A1 US 2017067104 W US2017067104 W US 2017067104W WO 2019125387 A1 WO2019125387 A1 WO 2019125387A1
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Prior art keywords
interconnect
magnet
spin
magnetic
adjacent
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PCT/US2017/067104
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English (en)
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Sasikanth Manipatruni
Gary Allen
Dmitri E. Nikonov
Kaan OGUZ
Tanay GOSAVI
Ian Young
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Intel Corporation
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Priority to PCT/US2017/067104 priority Critical patent/WO2019125387A1/fr
Publication of WO2019125387A1 publication Critical patent/WO2019125387A1/fr

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Magnetic active materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Definitions

  • Embedded memory with state retention can enable energy and computational efficiency.
  • spin transfer torque based magnetic random access memory suffer from the problem of high voltage and high write current during the programming (e.g., writing) of a bit-cell.
  • large write current e.g., greater than 100 mA
  • voltage e.g., greater than 0.7 V
  • Limited write current also leads to high write error rates or slow switching times (e.g., exceeding 20 ns) in MTJ based MRAM.
  • the presence of a large current flowing through a tunnel barrier leads to reliability issues in magnetic tunnel junctions.
  • Fig. 1A illustrates a magnetization response to an applied magnetic field for a ferromagnet.
  • Fig. IB illustrates a magnetization response to an applied magnetic field for a paramagnet.
  • Figs. 2A-B illustrate a three-dimensional (3D) view and corresponding top view, respectively, of a device having an out-of-plane magnetic tunnel junction (MTJ) stack coupled to a spin orbit coupling (SOC) interconnect, where the MTJ stack includes a free magnet layer much smaller than a length of the SOC interconnect.
  • MTJ out-of-plane magnetic tunnel junction
  • SOC spin orbit coupling
  • Fig. 3 illustrates a cross-section of the SOC interconnect with electrons having their spins polarized in-plane and deflected up and down resulting from a flow of charge current.
  • Fig. 4A illustrates a plot showing write energy-delay conditions for one transistor and one MTJ with spin Hall effect (SHE) material compared to traditional MTJs.
  • SHE spin Hall effect
  • Fig. 4B illustrates a plot comparing reliable write times for spin Hall MRAM and spin torque MRAM.
  • Figs. 5A-B illustrate a 3D view and corresponding top view, respectively, of a device having an MTJ with magnets having perpendicular magnetizations, where the free magnet has a dimension substantially equal to a length of a spin orbit coupling interconnect, according to some embodiments of the disclosure.
  • Figs. 6A-B illustrate a 3D view and corresponding top view, respectively, of a device having an MTJ with magnets having perpendicular magnetizations, where the free magnet is a multi-layer magnet and has a dimension substantially equal to a length of a spin orbit coupling interconnect, according to some embodiments of the disclosure.
  • Figs. 7A-B illustrate a 3D view and corresponding top view, respectively, of a device having an MTJ with magnets having perpendicular magnetizations, where the stack of layers of the MTJ have dimensions substantially equal to a length of a spin orbit coupling interconnect, according to some embodiments of the disclosure.
  • Figs. 8A-B illustrate a cross-section and corresponding top view, respectively, of a device having an MTJ with magnets having perpendicular magnetizations, where the free magnet is a composite magnet and has a dimension substantially equal to a length of a spin orbit coupling interconnect, according to some embodiments of the disclosure.
  • Fig. 8C illustrates a cross-section view of a device having an MTJ with magnets having perpendicular magnetizations, where the stack of layers of the MTJ have dimensions substantially equal to a length of a spin orbit coupling interconnect, according to some embodiments of the disclosure.
  • Fig. 9A illustrates a plot showing spin polarization capturing switching of an extended free magnet layer, according to some embodiments of the disclosure.
  • Fig. 9B illustrates a magnetization plot associated with Fig. 9A, according to some embodiments of the disclosure.
  • Fig. 9C illustrates a plot showing spin polarization capturing switching of an extended free magnet layer using spin orbit material, according to some embodiments of the disclosure.
  • Fig. 9D illustrates a magnetization plot associated with Fig. 9C, according to some embodiments of the disclosure.
  • Fig. 10 illustrates a cross-section of a die layout having the device of Fig. 5A formed in metal 3 (M3) and metal 2 (M2) layer regions, according to some embodiments of the disclosure.
  • Fig. 11 illustrates a cross-section of a die layout having the device of Fig. 5A formed in metal 2 (M2) and metal 1 (Ml) layer regions, according to some embodiments of the disclosure.
  • Fig. 12 illustrates a plot showing an improvement in energy-delay product using the device of Fig. 5A compared to the device of Fig. 2A, in accordance with some embodiments of the disclosure.
  • Fig. 13 illustrates a flowchart showing a method of forming any one of devices of Figs. 5-8, according to some embodiments of the disclosure.
  • Fig. 14 illustrates a smart device or a computer system or a SoC (System-on-
  • Chip with a magnetic junction having an extended free magnet layer than a traditional magnet, according to some embodiments of the disclosure.
  • a spin orbit coupling (SOC) based magnetic memory that uses an extended free magnet layer adjacent to a SOC interconnect (or write electrode).
  • the term“extended” generally refers to extending a dimension of a layer or structure (e.g., length or width of a magnet or other layers) relative to a previous dimension.
  • the free magnet of a magnetic junction is a circle or“dot”, and the diameter of the dot is extended so that it is substantially (or completely) equal to a length of the SOC interconnect.
  • the free magnet of the magnetic junction is a square or rectangle, and has a length which is at most a length of the SOC interconnect.
  • the extended free magnet layer is substantially (or completely) adjacent to an entire length of the SOC interconnect so as to get the most surface interaction between the surface of the SOC interconnect and the adjacent surface of the extended free magnet layer or structure.
  • the remaining layers (or structures) of the magnetic junction are smaller in size (e.g., diameter if they are a circle, or length if they are a square or rectangle) than the extended free magnet.
  • a fixed magnet of the magnetic junction has a smaller diameter than a diameter of the extended free magnet.
  • the free magnet structure is split into two free magnet layers, where the extended free magnet layer is adjacent to the SOC interconnect, while the other free magnet layer is coupled to the extended free magnet layer via a coupling layer.
  • the coupling layer comprises one or more of: Ru, Os, Hs, Fe, or other similar transition metals from the platinum group of the periodic table. [0025] In some embodiments, the coupling layer is removed and the other free magnet is directly connected to the extended free magnet. In some embodiments, the other free magnet is smaller in diameter or length than the extended free magnet. In some embodiments, the other free magnet is of the same size as the extended free magnet. In some embodiments, all layers of the magnetic junction include the synthetic anti-ferromagnet (SAF) are of the same size as the extended free magnet. In some embodiments, the magnets (including the extended free magnet) are perpendicular magnet with perpendicular magnetic anisotropy. In some embodiments, the magnets (including the extended free magnet) are in plane magnets with magnetizations along the plane of the device having the magnetic junction.
  • SAF synthetic anti-ferromagnet
  • the term“free” or“unfixed” here with reference to a magnet refers to a magnet whose magnetization direction can change along its easy axis upon application of an external field or force (e.g., Oersted field, spin torque, etc.).
  • an external field or force e.g., Oersted field, spin torque, etc.
  • the term“fixed” or “pinned” here with reference to a magnet refers to a magnet whose magnetization direction is pinned or fixed along an axis and which may not change due to application of an external field (e.g., electrical field, Oersted field, spin torque,).
  • perpendicularly magnetized magnet refers to a magnet having a magnetization which is substantially perpendicular to a plane of the magnet or a device.
  • an in-plane magnet refers to a magnet that has magnetization in a direction substantially along the plane of the magnet.
  • a magnet with a magnetization which is in an x or y direction and is in a range of 0 (or 180 degrees) +/- 20 degrees relative to an x-y plane of a device.
  • a device may generally refer to an apparatus according to the context of the usage of that term.
  • a device may refer to a stack of layers or structures, a single structure or layer, a connection of various structures having active and/or passive elements, etc.
  • a device is a three dimensional structure with a plane along the x-y direction and a height along the z direction of an x-y-z Cartesian coordinate system.
  • the plane of the device may also be the plane of an apparatus which comprises the device.
  • the extended free magnet which is adjacent to the SOC interconnect comprises a composite stack (e.g., alternate layers of Co and Pt).
  • the fixed magnet or fixed layer of the magnetic junction also comprises a composite stack (e.g., alternate layers of Co and Pt).
  • the out-of-plane magnetization switching enables perpendicular magnet anisotropy (PMA) based magnetic devices (e.g., MRAM and logic) comprising spin orbit effects that generate perpendicular spin currents.
  • PMA perpendicular magnet anisotropy
  • MRAM magnetic random access memory
  • GSOE giant spin orbit effects
  • the perpendicular magnet switch results in lower write error rates which enable faster MRAM (e.g., write time of less than 10 ns).
  • the perpendicular magnet switch of some embodiments decouples write and read paths to enable faster read latencies.
  • the perpendicular magnet switch of some embodiments uses significantly smaller read current through the magnetic junction (e.g., MTJ or spin valve) and provides improved reliability of the tunneling oxide and MTJs. For example, less than 10 mA compared to 100 pA for nominal write is used by the perpendicular magnet switch of some embodiments.
  • the SOC interconnect can be fully utilized for maximizing the read and write speeds.
  • the extended free layer also assists with patterning the magnetic junction.
  • the interface between the spin orbit electrode and free magnet layer of the magnetic junction is one of the most critical interfaces because it is responsible for achieving high efficiency switching in the magnetic junction.
  • the etching and etch stop requirements typically necessary for pattering the magnetic tunnel junction on the spin orbit layer, are relaxed down to very small sizes.
  • the size of the magnetic memory bit cell is not limited by the size of the magnetic tunnel junction but the transistors needed to apply current to the spin orbit electrode. As such, an extended free layer can be fabricated without losing on the area efficiency.
  • any represented signal may actually comprise one or more signals that may travel in either direction and may be implemented with any suitable type of signal scheme.
  • connection means a direct connection, such as electrical, mechanical, or magnetic connection between the things that are connected, without any intermediary devices.
  • Coupled means a direct or indirect connection, such as a direct electrical, mechanical, or magnetic connection between the things that are connected or an indirect connection, through one or more passive or active intermediary devices.
  • circuit or“module” may refer to one or more passive and/or active components that are arranged to cooperate with one another to provide a desired function.
  • signal may refer to at least one current signal, voltage signal, magnetic signal, or data/clock signal.
  • the meaning of “a,” “an,” and “the” include plural references.
  • the meaning of “in” includes “in” and “on.”
  • the term“scaling” generally refers to converting a design (schematic and layout) from one process technology to another process technology and subsequently being reduced in layout area.
  • the term“scaling” generally also refers to downsizing layout and devices within the same technology node.
  • the term“scaling” may also refer to adjusting (e.g., slowing down or speeding up - i.e. scaling down, or scaling up respectively) of a signal frequency relative to another parameter, for example, power supply level.
  • the terms “substantially,”“close,”“approximately,”“near,” and“about,” generally refer to being within +/- 10% of a target value.
  • phrases“A and/or B” and“A or B” mean (A), (B), or (A and B).
  • phrase“A, B, and/or C” means (A), (B), (C), (A and B), (A and C), (B and C), or (A, B and C).
  • spin spin and“magnetic moment” are used equivalently. More rigorously, the direction of the spin is opposite to that of the magnetic moment, and the charge of the particle is negative (such as in the case of electron).
  • Fig. 1A illustrates a magnetization hysteresis plot 100 for ferromagnet (FM)
  • the plot shows magnetization response to an applied magnetic field for ferromagnet 101.
  • the x-axis of plot 100 is magnetic field ⁇ ’ while the y-axis is magnetization‘m’.
  • the relationship between ⁇ ’ and‘m’ is not linear and results in a hysteresis loop as shown by curves 102 and 103.
  • the maximum and minimum magnetic field regions of the hysteresis loop correspond to saturated magnetization configurations 104 and 106, respectively.
  • saturated magnetization configurations 104 and 106 FM 101 has stable magnetizations.
  • FM 101 does not have a definite value of magnetization, but rather depends on the history of applied magnetic fields.
  • the magnetization of FM 101 in configuration 105 can be either in the +x direction or the -x direction for an in-plane FM.
  • changing or switching the state of FM 101 from one magnetization direction (e.g., configuration 104) to another magnetization direction (e.g., configuration 106) is time consuming resulting in slower nanomagnets response time. It is associated with the intrinsic energy of switching proportional to the area in the graph contained between curves 102 and 103.
  • Fig. IB illustrates magnetization plot 120 for paramagnet 121.
  • Plot 120 shows the magnetization response to an applied magnetic field for paramagnet 121.
  • the x-axis of plot 120 is magnetic field ⁇ ’ while the y-axis is magnetization‘m’.
  • a paramagnet as opposed to a ferromagnet, exhibits magnetization when a magnetic field is applied to it.
  • Paramagnets generally have magnetic permeability greater or equal to one and hence are attracted to magnetic fields.
  • the magnetic plot 120 of Fig. IB does not exhibit hysteresis which allows for faster switching speeds and smaller switching energies between the two saturated magnetization configurations 124 and 126 of curve 122.
  • paramagnet 121 comprises a material which includes one or more of: Platinum(Pt), Palladium (Pd), Tungsten (W), Cerium (Ce), Aluminum (Al), Lithium (Li), Magnesium (Mg), Sodium (Na), CT2O3 (chromium oxide), CoO (cobalt oxide), Dysprosium (Dy), DyrO (dysprosium oxide), Erbium (Er), EnCb (Erbium oxide), Europium (Eu), EU2O3 (Europium oxide), Gadolinium (Gd), Gadolinium oxide (GdiCh).
  • paramagnet 121 comprises dopants which include one or more of: Ce,
  • the magnet can be either a FM or a paramagnet.
  • Figs. 2A-B illustrate a three-dimensional (3D) view 200 and corresponding top view 220, respectively, of device having an out-of-plane magnetic tunnel junction (MTJ) stack coupled to a spin orbit coupling (SOC) interconnect, where the MTJ stack includes a free magnet layer much smaller than a length of the SOC interconnect.
  • MTJ magnetic tunnel junction
  • SOC spin orbit coupling
  • the stack of layers having magnetic junction 221 is coupled to an electrode 222 comprising spin Hall effect (SHE) or SOC material, where the SHE material converts charge current Iw (or write current) to spin polarized current Is.
  • the device of Fig. 2A forms a three-terminal memory cell with SHE induced write mechanism and MTJ based read-out.
  • the device of Fig. 2A comprises magnetic junction 221, SHE Interconnect or electrode 222, and non-magnetic metal(s) 223a/b.
  • MTJ 221 comprises layers 22la, 22lb, and 22lc.
  • layers 22la and 22lc are ferromagnetic layers.
  • layer 22lb is a metal or a tunneling dielectric.
  • layer 22lb is metal or a metal oxide (e.g., a non-magnetic metal such as Al and/or its oxide) and when the magnetic junction is a tunneling junction, then layer 22lb is a dielectric (e.g. MgO).
  • a metal oxide e.g., a non-magnetic metal such as Al and/or its oxide
  • layer 22lb is a dielectric (e.g. MgO).
  • One or both ends along the horizontal direction of SHE Interconnect 222 is formed of non-magnetic metals 223a/b. Additional layers 22ld, 22le, 22lf, and 22lg can also be stacked on top of layer 22lc.
  • layer 22lg is a non-magnetic metal electrode.
  • the magnetic junction is described as a magnetic tunneling junction (MTJ).
  • the embodiments are also applicable for spin valves.
  • a wide combination of materials can be used for material stacking of magnetic junction 221.
  • the stack of layers 22la, 22lb, 22lc, 22ld, 22 le, 22lf, and 22lg are formed of materials which include: Co x Fe y B z , MgO, Co x Fe y B z , Ru, Co x Fe y B z , IrMn, and Ru, respectively, where‘x,’‘y,’ and‘z’ are fractions of elements in the alloys.
  • Other materials may also be used to form MTJ 221.
  • MTJ 221 stack comprises free magnetic layer 22la, MgO tunneling oxide 22lb, a fixed magnetic layer 22lc/d/e which is a combination of CoFe, Ru, and CoFe layers, respectively, referred to as Synthetic Anti- Ferromagnet (SAF), and an Anti-Ferromagnet (AFM) layer 22lf.
  • SAF Synthetic Anti- Ferromagnet
  • AFM Anti-Ferromagnet
  • the SAF layer has the property, that the magnetizations in the two CoFe layers are opposite, and allows for cancelling the dipole fields around the free magnetic layer such that a stray dipole field will not control the free magnetic layer.
  • the free and fixed magnetic layers are formed of CFGG (i.e., Cobalt (Co), Iron (Fe), Germanium (Ge), or Gallium (Ga) or a combination of them).
  • FM 22la/c are formed from Heusler alloys.
  • Heusler alloys are ferromagnetic metal alloys based on a Heusler phase. Heusler phases are intermetallic with certain composition and face-centered cubic crystal structure. The ferromagnetic property of the Heusler alloys are a result of a double-exchange mechanism between neighboring magnetic ions.
  • the Heusler alloy includes one of: Cu 2 MnAl, Cu 2 MnIn, Cu 2 MnSn, NfiMnAl, NfiMnln, NfiMnSn, NfiMnSb, Ni 2 MnGa Co 2 MnAl, Co 2 MnSi, Co 2 MnGa, Co 2 MnGe, Pd 2 MnAl, Pd 2 MnIn, Pd 2 MnSn, Pd 2 MnSb, Co 2 FeSi, Co 2 FeAl, Fe 2 VAl, Mn 2 VGa, Co 2 FeGe, MnGa, or MnGaRu.
  • fixed magnet layer 22 lc is a magnet with perpendicular magnetic anisotropy (PMA).
  • PMA perpendicular magnetic anisotropy
  • fixed magnet structure 22 lc has a magnetization pointing along the z-direction and is perpendicular to the x-y plane of the device 200.
  • the magnet with PMA comprises a stack of materials, wherein the materials for the stack are selected from a group consisting of: Co and Pt; Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO; MgO, CoFeB, V, CoFeB, and MgO; MgO, CoFeB, Mo, CoFeB, and MgO; Mn x Ga y ; Materials with Llo symmetry; and materials with tetragonal crystal structure.
  • the magnet with PMA is formed of a single layer of one or more materials.
  • the single layer is formed of MnGa.
  • Llo is a crystallographic derivative structure of a FCC (face centered cubic lattice) structure and has two of the faces occupied by one type of atom and the comer and the other face occupied with the second type of atom.
  • FCC face centered cubic lattice
  • the magnetization vector usually is along the [0 0 1] axis of the crystal.
  • Examples of materials with Llo symmetry include CoPt and FePt.
  • Examples of materials with tetragonal crystal structure and magnetic moment are Heusler alloys such as CoFeAl, MnGe, MnGeGa, and MnGa.
  • SHE Interconnect 222 (or the write electrode) includes 3D materials such as one or more of b-Tantalum (b-Ta), Ta, b-Tungsten (b-W), W, Pt, Copper (Cu) doped with elements such as Iridium, Bismuth and any of the elements of 3d, 4d, 5d and 4f, 5f periodic groups in the Periodic Table which may exhibit high spin orbit coupling.
  • SHE interconnect 122 comprises of 2D spin orbit material which includes one or more of: graphene, BiSe 2 , B1S2, BiSe x Te2-x, T1S2, WS2, M0S2, TiSe2, ⁇ VSe2.
  • the SHE interconnect 222 comprises spin orbit material which includes one of a 2D material or a 3D material, wherein the 3D material is thinner than the 2D material.
  • the SHE interconnect 222 comprises a spin orbit material which includes materials that exhibit Rashba-Bychkov effect.
  • material which includes materials that exhibit Rashba-Bychkov effect comprises materials ROCh 2 , where‘R’ includes one or more of: La, Ce, Pr, Nd, Sr, Sc, Ga, Al, or In, and where“Ch” is a chalcogenide which includes one or more of: S, Se, or Te.
  • SHE Interconnect 222 transitions into high
  • the non-magnetic metal(s) 223a/b include one or more of: Cu, Co, a-Ta, Al, CuSi, or NiSi.
  • the magnetization direction of fixed magnetic layer 22 lc is perpendicular relative to the magnetization direction of free magnetic layer 22la (e.g., magnetization directions of the free and fixed magnetic layers are not parallel, rather they are orthogonal).
  • the magnetization direction of free magnetic layer 221 a is along the x-y plane of device 200 while the magnetization direction of fixed magnetic layer 22 lc is perpendicular to the x-y plane.
  • magnetization direction of fixed magnetic layer 22 la is along the x-y plane of device 200 while the magnetization direction of free magnetic layer 221 c is perpendicular to the x-y plane of device 200.
  • the thickness of a ferromagnetic layer may determine its equilibrium magnetization direction. For example, when the thickness of the ferromagnetic layer 22la/c is above a certain threshold (depending on the material of the magnet, e.g. approximately 1.5 nm for CoFe), then the ferromagnetic layer exhibits magnetization direction which is in-plane. Likewise, when the thickness of the ferromagnetic layer 22la/c is below a certain threshold (depending on the material of the magnet), then the ferromagnetic layer 22la/c exhibits magnetization direction which is perpendicular to the plane of the magnetic layer.
  • a certain threshold depending on the material of the magnet
  • factors may also determine the direction of magnetization.
  • factors such as surface anisotropy (depending on the adjacent layers or a multi-layer composition of the ferromagnetic layer) and/or crystalline anisotropy (depending on stress and the crystal lattice structure modification such as FCC (face centered cubic lattice), BCC (body centered cubic lattice), or Llo-type of crystals, where Llo is a type of crystal class which exhibits perpendicular magnetizations), can also determine the direction of magnetization.
  • surface anisotropy depending on the adjacent layers or a multi-layer composition of the ferromagnetic layer
  • crystalline anisotropy depending on stress and the crystal lattice structure modification
  • FCC face centered cubic lattice
  • BCC body centered cubic lattice
  • Llo-type of crystals where Llo is a type of crystal class which exhibits perpendicular magnetizations
  • the applied current I w is converted into spin current L by SHE
  • Interconnect 222 also referred to as the spin orbit coupling interconnect. This spin current switches the direction of magnetization of the free layer and thus changes the resistance of MTJ 221. However, to read out the state of MTJ 221, a sensing mechanism is needed to sense the resistance change.
  • the magnetic cell is written by applying a charge current via SHE
  • the direction of the magnetic writing in free magnet layer 221 a is decided by the direction of the applied charge current.
  • Positive currents e.g., currents flowing in the +y direction
  • a spin injection current with transport direction (along the +z direction) and spins pointing to the +x direction.
  • the injected spin current in turn produces spin torque to align the free magnet 22 la (coupled to the SHE layer 222 of SHE material) in the +x direction.
  • Negative currents e.g., currents flowing in the -y direction
  • the injected spin current in-tum produces spin torque to align the free magnet 22 la (coupled to the SHE material of layer 222) in the -x direction.
  • the directions of spin polarization and thus of the free layer magnetization alignment are reversed compared to the above.
  • Fig. 3 illustrates a cross-section 300 of the SOC interconnect with electrons having their spins polarized in-plane and deflected up and down resulting from a flow of charge current.
  • positive charge current represented by J c produces spin-front (e.g., in the +x direction) polarized current 301 and spin-back (e.g., in the -x direction) polarized current 302.
  • the injected spin current l s generated by a charge current I c in the write electrode 222 is given by:
  • the vector of spin current I s / T — points in the direction of transferred magnetic moment and has the magnitude of the difference of currents with spin along and opposite to the spin polarization direction
  • z is the unit vector perpendicular to the interface
  • P SHE is the spin Hall injection efficiency which is the ratio of magnitude of transverse spin current to lateral charge current
  • w is the width of the magnet
  • t is the thickness of the SHE
  • S f is the spin flip length in SHE Interconnect 222
  • Q 5HE is the spin Hall angle for SHE Interconnect 222 to free ferromagnetic layer interface.
  • the injected spin angular momentum responsible for the spin torque given by:
  • the generated spin up and down currents 301/302 (e.g., / s ) are described as a vector cross-product given by:
  • This spin to charge conversion is based on Tunnel Magneto Resistance (TMR) which is highly limited in the signal strength generated.
  • TMR Tunnel Magneto Resistance
  • the TMR based spin to charge conversion has low efficiency (e.g., less than one).
  • Fig. 4A illustrates a plot 420 showing write energy-delay conditions for one transistor and one MTJ with spin Hall effect (SHE) material compared to traditional MTJs.
  • SHE spin Hall effect
  • Fig. 4B illustrates plot 430 showing write energy-delay conditions for one transistor and one magnetic tunnel junction (MTJ) with spin Hall effect (SHE) material compared to traditional MTJs.
  • x-axis is energy per write operation in femto-Joules (fJ) while the y-axis is delay in nano-seconds (ns).
  • the energy-delay trajectory of SHE and MTJ devices are compared for in-plane magnet switching as the applied write voltage is varied.
  • the energy-delay relationship (for in-plane switching) can be written as: where R write is the write resistance of the device (resistance of SHE electrode or resistance of MTJ-P or MTJ-AP, where MTJ-P is a MTJ with parallel magnetizations while MTJ-AP is an MTJ with anti-parallel magnetizations, m 0 is vacuum permeability, e is the electron charge.
  • R write is the write resistance of the device (resistance of SHE electrode or resistance of MTJ-P or MTJ-AP, where MTJ-P is a MTJ with parallel magnetizations while MTJ-AP is an MTJ with anti-parallel magnetizations, m 0 is vacuum permeability, e is the electron charge.
  • the equation shows that the energy at a given delay is directly proportional to the square of the
  • t 0 / j v aries as the spin polarization varies for various SHE metal electrodes (e.g., 423, 424, 425).
  • Plot 420 shows five curves 421, 422, 423, 424, and 425.
  • Curves 421 and 422 show write energy-delay conditions using traditional MTJ devices without SHE material.
  • curve 421 shows the write energy-delay condition caused by switching a magnet from anti-parallel (AP) to parallel (P) state
  • curve 422 shows the write energy-delay condition caused by switching a magnet from P to AP state
  • Curves 422, 423, and 424 show write energy-delay conditions of an MTJ with SHE material.
  • write energy-delay conditions of an MTJ with SHE material is much lower than the write energy-delay conditions of an MTJ without SHE material. While the write energy-delay of an MTJ with SHE material improves over a traditional MTJ without SHE material, further improvement in write energy-delay is desired.
  • Fig. 4B illustrates plot 430 comparing reliable write times for spin Hall
  • Waveform 431 is the write time for in-plane MTJ
  • waveform 432 is the write time for PMA MTJ
  • waveform 433 is the write time for spin Hall MTJ.
  • the cases considered here assume a 30 X 60 nm magnet with 40 kT energy barrier and 3.5 nm SHE electrode thicknesses.
  • the energy- delay trajectories of the devices are obtained assuming a voltage sweep from 0 V to 0.7 V in accordance to voltage restrictions of scaled CMOS.
  • the energy-delay trajectory of the SHE- MTJ devices exhibits broadly two operating regions A) Region 1 where the energy-delay
  • the energy-delay trajectory of the STT-MTJ (spin transfer torque MTJ) devices is limited with a minimum delay of 1 ns for in-plane devices at 0.7 V maximum applied voltage, the switching energy for P-AP and AP-P are in the range of 1 pJ/write.
  • the energy-delay trajectory of SHE-MTJ (in-plane anisotropy) devices can enable switching times as low as 20 ps (b-W with 0.7 V, 20 fj/bit) or switching energy as small as 2 fj (b-W with 0.1 V, 1.5 ns switching time).
  • Figs. 5A-B illustrate a 3D view 500 and corresponding top view 520, respectively, of a device having an MTJ with magnets having perpendicular magnetizations, where the free magnet has a dimension substantially equal to a length of a spin orbit coupling interconnect, according to some embodiments of the disclosure.
  • the device of Fig. 5A is similar to the device of Fig. 2A except that the free magnet 22 la of Fig. 2A is extended along its length forming an extended magnet 52la such that the extended free magnet 52la has a length L2 which is substantially equal to a length Ll of the SOC interconnect 222.
  • the entire surface along the length of the SOC interconnect 222 is adjacent or in direct contact with a surface of the extended free magnet 521 a.
  • the extended free magnet 52la is adjacent to dielectric or metal (or its oxide) 22lb, where layer 22lb has a length L3 which is substantially smaller than length L2 of the extended free magnet 52 la.
  • the magnetic junction 521 comprises extended free magnet 52la, fixed magnet 22lc, and dielectric or metal 22lb between layers 52la and 22lc.
  • the remaining layers of the magnetic junction 521 and other layers on top of the junction have a length which is same as L3.
  • the width W of the extended free magnet 52 la is also extended so that it is substantially equal to the width of the SOC electrode 222.
  • the length of the extended free magnet is along the y-axis while the width is along the x axis.
  • the embodiments are applicable to a regular spin transfer torque electrode (not shown) which can replace spin Hall effect write electrode 222.
  • the extended free magnet 52 la comprises a stack of layers or structures (also referred to as a composite stack) as opposed to a single layer.
  • the stack of layers of the extended free magnet 521 a comprises alternating layers of a first material and a second material.
  • the first material includes one of: Co, Ni, Fe, or Heusler alloy.
  • the second material includes one of: Pt, Pd, Ir, Ru, or Ni.
  • the composite stack is formed with a sufficiently high anisotropy (indicated by an effective anisotropy magnetic field Hk) and sufficiently low saturated magnetization (M s ) to increase injection of spin currents.
  • M s is generally the state reached when an increase in applied external magnetic field H cannot increase the magnetization of the material.
  • sufficiently low M s refers to M s less than 200 kA/m (kilo-Amperes per meter).
  • Anisotropy Hk generally refers to the material property which is directionally dependent. Materials with high Hk are materials with material properties that are highly directionally dependent.
  • sufficiently high Hk in context of Heusler alloys is considered to be greater than 2000 Oe (Oersted).
  • Figs. 5A-B are illustrated with reference to magnets having PMA magnetizations 502 and 503, the embodiments are also applicable to magnets having in-plane magnetizations (not shown).
  • the extended free magnet 52 la and the fixed magnet 22 lc have in-plane magnetizations.
  • Figs. 6A-B illustrate a 3D view 600 and a corresponding top view 620, respectively, of a device having an MTJ with magnets having perpendicular magnetizations, where the free magnet is a multi-layer magnet and has a dimension substantially equal to a length of a spin orbit coupling interconnect, according to some embodiments of the disclosure.
  • the device of Fig. 6A is similar to device of Fig. 5A, but for the composition of the extended free magnet 52la.
  • the extended free magnet 52la comprises three layers including a first layer 62laa, a second layer 62lab, and a third layer 62lac, where the second layer 62lab is sandwiched between the first layer 62laa and the third layer 62lac.
  • first layer 62laa is an extended free magnet and the second layer 62 lab is a coupling layer comprising one or more of: a transition metal such as Ru, Os, He, Fe, or other transitional metals from the platinum group of the periodic table.
  • third layer 62lac is also a free magnet.
  • free magnet 62laa is extended like free magnet 52 la, while other layers include coupling layer (or second layer) 62lab and third layer 62lac comprising a free magnet not extended and have lengths similar or same as lengths of other layers of the magnetic junction.
  • second layer 62lab and third layer 62lac may have lengths same as length L3 of fixed magnet 22lb.
  • the magnetic junction here is junction 621.
  • the coupling layer 62lab couples a high stability magnet in 62laa to magnet 62lac that gives high tunnel-magneto resistance.
  • the coupling can be dipole, ferromagnetic or
  • Figs. 6A-B are illustrated with reference to magnets having PMA with magnetizations 602a/b and 502, the embodiments are also applicable to magnets having in-plane magnetizations (not shown). In one such example, the extended free magnet 62laa, and free magnet 62 lac (whether extended or not) and the fixed magnet 22 lc have in-plane magnetizations.
  • free magnet layer 62laa and/or free magnet layer 62lac comprise composite layers.
  • free magnet layer 62laa and/or free magnet layer 62lac comprise alternating layers of a first material and a second material.
  • the first material includes one of: Co, Ni, Fe, or a Heusler alloy.
  • the second material includes one of: Pt, Pd, Ir, Ru, or Ni.
  • the remaining layers of the magnetic junction 621 and other layers on top of the junction have a length which is same as L3.
  • the width W of the extended free magnet 62laa is also extended so that it is substantially equal to the width of the SOC electrode 222.
  • the length of the extended free magnet is along the y-axis while the width is along the x axis.
  • Figs. 7A-B illustrate a 3D view 700 and a corresponding top view 720, respectively, of a device having an MTJ with magnets having perpendicular magnetizations, where the stack of layers of the MTJ have dimensions substantially equal to a length of a spin orbit coupling interconnect, according to some embodiments of the disclosure.
  • the device of Fig. 7A is similar to the device of Fig. 6A expect that all remaining layers of the magnetic junction 621 and other layers on top of the junction have the same length as the length L2 of the extended free magnet 62laa.
  • there is one magnetic junction stack per SOC interconnect 222 where the entire stack has a dimension which is same or substantially equal to the length Ll of SOC interconnect 222.
  • the magnetic junction 721 comprises free layers 62laa, 62lac, coupling layer 62lab, dielectric or metal layer 72lb, and fixed magnet 72 lc.
  • layer 72ld has the same material as the material for layer 22ld
  • layer 72le has the same material as the material for layer 22 le
  • layer 72lf has the same material as the material for layer 22lf
  • layer 72lg has the same material as the material for layer 22 lg.
  • Figs. 7A-B are illustrated with reference to magnets having PMA with magnetizations 602a/b and 703, the embodiments are also applicable to magnets having in-plane magnetizations (not shown).
  • the extended free magnet 62laa, and free magnet 62 lac (whether extended or not) and the fixed magnet 72 lc have in-plane magnetizations.
  • the embodiments of Figs. 5-7 are illustrated with reference to circular or“dot” shaped magnetic junction stack, the embodiment of extended free layer is also applicable to other shapes of the magnetic junction stack.
  • the extended free layer e.g., layers 52la, 62laa/ab/ac
  • the extended free layer are rectangular or square shaped according to the surface shape of SOC interconnect 222.
  • all layers of the magnetic junction stack are non-circular.
  • all layers of the magnetic junction stack are rectangular or square shaped according to the surface shape of SOC interconnect 222.
  • Figs. 8A-B illustrate a cross-section 800 and corresponding top view 830, respectively, of a device having an MTJ with magnets having perpendicular magnetizations, where the free magnet is a composite magnet and has a dimension L2 substantially equal to a length Ll of a spin orbit coupling interconnect, according to some embodiments of the disclosure.
  • the entire stack is of non-circular shape.
  • all layers of the magnetic junction stack are rectangular or square shaped according to the surface shape of SOC interconnect 222.
  • This multilayer free magnet 82la replaces the single layer free magnet 50la of Fig. 5A, in accordance with some embodiments.
  • This multilayer free magnet 82 la is also referred to as a composite magnet formed of a composite stack of material.
  • the composite stack comprises layers 821 aa i -n and 821 ab i -n which are stacked in an alternating manner, where‘n’ has a range of 1 to 10.
  • the composite stack 821 a comprises alternating layers of a first material and a second material.
  • the first material includes one of: Co, Ni, Fe, or a Heusler alloy.
  • the second material includes one of: Pt, Pd, Ir, Ru, or Ni.
  • the Heusler alloy includes one or more of Co, Cu, Fe,
  • the Heusler alloy includes one of: Cu 2 MnAl, Cu 2 MnIn, Cu 2 MnSn, Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa Co 2 MnAl, Co 2 MnSi, Co 2 MnGa, Co 2 MnGe, Pd 2 MnAl, Pd 2 MnIn, Pd 2 MnSn, Pd 2 MnSb, Co 2 FeSi, Co 2 FeAl, Fe 2 VAl, Mn 2 VGa, Co 2 FeGe, MnGa, or MnGaRu.
  • the first material has a thickness tl in a range of 0.6 nm to 2 nm.
  • the second material has a thickness t2 in a range of 0.1 nm to 3 nm. While the embodiments here show first material being at the bottom followed by the second material, the order can be reversed without changing the technical effect.
  • the thickness of free magnet 82la is 1.5 nm to 15 nm
  • thickness interconnect 222 is 1 nm to 20 nm
  • thickness of dielectric/metal layer 22lb is 0.5 nm to 2 nm
  • thickness of fixed magnet 22 lc is 1.5 nm to 8 nm.
  • fixed magnet 821 c is also a composite magnet having a stack of alternating layers of the first and second materials.
  • the reaming layers of the stack above the extended free layer 82la have length shorter than L2.
  • L3 is less than L2.
  • the embodiment of Figs. 8A-B are illustrated with reference to magnets having PMA with magnetizations 802 and 803, the embodiments are also applicable to magnets having in-plane magnetizations (not shown).
  • the extended free magnet 82 la and the fixed magnet 821 c have in-plane magnetizations.
  • the magnetic junction 821 comprises free layers 82la, dielectric or metal layer 82lb, and fixed magnet 82lc.
  • the remaining layers have the same material as those described with reference to Fig. 2A.
  • layer 821 d has the same material as the material for layer 22ld
  • layer 82le has the same material as the material for layer 22le
  • layer 82lf has the same material as the material for layer 22lf
  • layer 82lg has the same material as the material for layer 22lg.
  • the width Wl of the extended free layer 821 a is also the same as that of the width of SOC interconnect 222 as illustrated by Fig. 8B.
  • Fig. 8C illustrates a cross-section view 850 of a device having MTJ 851 with magnets having perpendicular magnetizations, where the stack of layers of the MTJ have dimensions substantially equal to a length of a spin orbit coupling interconnect, according to some embodiments of the disclosure.
  • the device of Fig. 8C is similar to the device of Fig. 8A expect that all remaining layers of the magnetic junction 821 and other layers on top of the junction have the same length as the length L2 of the extended free magnet 82 la.
  • the magnetic junction 851 comprises free layers 82la, dielectric or metal layer 85lb, and fixed magnet 85 lc.
  • Fig. 9A illustrates a plot 900 showing spin polarization capturing switching of an extended free magnet layer 521 a, according to some embodiments of the disclosure.
  • Fig. 9B illustrates a magnetization plot 920 associated with Fig. 9A, according to some embodiments of the disclosure.
  • Plot 900 shows switching of the spin orbit torque device with PMA.
  • waveforms 901, 902, and 903 represent the magnetization projections on the x, y, and z axes, respectively.
  • the magnet starts with z-magnetization of -1.
  • Positive spin orbit torque (SOT) is applied from 5 ns (nanoseconds) to 50 ns. It leads to switching the z- magnetization to 1.
  • a negative spin orbit torque is applied between 120 ns and 160 ns. It leads to switching the z-magnetization to 1. This illustrates change of magnetization in response to write charge current of certain polarity.
  • Fig. 9C illustrates a plot 930 showing spin polarization capturing switching of an extended free magnet layer using spin orbit material, according to some embodiments of the disclosure.
  • Fig. 9D illustrates a magnetization plot 940 associated with Fig. 9C, according to some embodiments of the disclosure.
  • waveforms 931, 932, and 933 represent the magnetization projections on x, y, and z axes, respectively.
  • SOT negative spin orbit torque
  • the z-magnetization remains close to -1. This illustrates the persistence of magnetization in response to write charge current of opposite polarity.
  • Fig. 10 illustrates a cross-section 1000 of a die layout having the device of
  • Cross-section 1000 illustrates an active region having a transistor MN comprising diffusion region 1001, a gate terminal 1002, drain terminal 1004, and source terminal 1003.
  • the source terminal 1003 is coupled to SL (source line) via poly or via, where the SL is formed on Metal 0 (M0).
  • the drain terminal 1004 is coupled to MOa (also metal 0) through via 1005.
  • the drain terminal 1004 is coupled to spin Hall angle electrode 222 through Via 0-1 (e.g., via connecting metal 0 to metal 1 layers), metal 1 (Ml), Via 1-2 (e.g., via connecting metal 1 to metal 2 layers), and Metal 2 (M2).
  • the magnetic junction (e.g., MTJ 1021 or spin valve) is formed in the metal 3 (M3) region.
  • MTJ 1021 (or spin valve) can be according to any one of MTJs described with reference to Figs. 5-8 with extended free magnet layer.
  • the perpendicular free magnet layer of the magnetic junction couples to spin Hall electrode 1022 (e.g., electrode 222).
  • the fixed magnet layer of magnetic junction couples to the bit-line (BL) via spin Hall electrode 1022 through Via 3-4 (e.g., via connecting metal 4 region to metal 4 (M4)).
  • the bit-line is formed on M4.
  • an n-type transistor MN is formed in the frontend of the die while the spin Hall electrode 1022 is located in the backend of the die.
  • the term “backend” generally refers to a section of a die which is opposite of a“frontend” and where an IC (integrated circuit) package couples to IC die bumps.
  • high level metal layers e.g., metal layer 6 and above in a ten-metal stack die
  • corresponding vias that are closer to a die package are considered part of the backend of the die.
  • the term “frontend” generally refers to a section of the die that includes the active region (e.g., where transistors are fabricated) and low-level metal layers and corresponding vias that are closer to the active region (e.g., metal layer 5 and below in the ten-metal stack die example).
  • the spin Hall electrode 1022 is located in the backend metal layers or via layers for example in Via 3.
  • the electrical connectivity to the device is obtained in layers M0 and M4 or Ml and M5 or any set of two parallel interconnects.
  • Fig. 11 illustrates a cross-section 1100 of a die layout having the device of
  • Fig. 5A formed in metal 2 (M2) and metal 1 (Ml) layer regions, according to some embodiments of the disclosure.
  • the magnetic junction e.g., MTJ 1021 or spin valve
  • the spin Hall electrode 1022 is formed in the metal 1 region.
  • Fig. 12 illustrates a plot 1200 showing an improvement in energy-delay product using the device of Fig. 5A compared to the device of Fig. 2A, in accordance with some embodiments of the disclosure.
  • the x-axis is Write Energy (in P) and the y-axis is Delay (in ns).
  • two the energy-delay trajectories are compared as write voltage is varied— 1201 which is the energy-delay trajectory of device 200, and 1202 is the energy delay trajectory of device 500.
  • Plot 1200 illustrates that device(s) e.g., 500/600/700/800, provide a shorter (i.e., improved) energy-delay product than device 200.
  • Fig. 13 illustrates a flowchart 1300 showing a method of forming any one of devices of Figs. 5-8, according to some embodiments of the disclosure. While the following blocks (or process operations) in the flowchart are arranged in a certain order, the order can be changed. In some embodiments, some blocks can be executed in parallel.
  • a first structure (of a magnetic junction) is formed comprising a magnet with unfixed perpendicular magnetic anisotropy (PMA), wherein the first structure has an anisotropy axis perpendicular to a plane of a device.
  • a second structure (of a magnetic junction) is formed comprising one of a dielectric or metal, the second structure being adjacent to the first structure.
  • a third structure (of the magnetic junction) if formed comprising a magnet with fixed PMA, wherein the third structure has an anisotropy axis perpendicular to the plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures.
  • an interconnect is formed adjacent to the magnetic junction.
  • a fourth structure is formed comprising a magnet with fixed PMA and wherein the first structure has a dimension along a length of the interconnect, wherein the dimension is substantially equal to the length of the interconnect.
  • the method of forming the first structure comprises forming a first material and a second material different from the first material, wherein the first and second materials are in a stack.
  • the first material includes one of: Co, Ni, Fe, or Heusler alloy.
  • the Heusler alloy includes one or more of Co, Cu, Fe, Ga, Ge, In, Mn, Al, In, Sb, Si, Sn, Ni, Pd, Ru, or V.
  • the Heusler alloy includes one of: Cu 2 MnAl, Cu 2 MnIn, Cu 2 MnSn, Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa Co 2 MnAl, Co 2 MnSi, Co 2 MnGa, Co 2 MnGe, Pd 2 MnAl, Pd 2 MnIn, Pd 2 MnSn, Pd 2 MnSb, Co 2 FeSi, Co 2 FeAl, Fe 2 VAl, Mn 2 VGa, Co 2 FeGe, MnGa, or MnGaRu.
  • the second material includes one of: Pt, Pd, Ir, Ru, or Ni.
  • the first material has a thickness in a range of 0.6 nm to 2 nm, and wherein the second material has a thickness in a range of 0.1 nm to 3 nm.
  • the dielectric comprises: Mg and O.
  • forming the first structure comprises forming a super lattice including a first material and a second material, wherein the first material includes one of: Co, Ni, Fe, or Heusler alloy, and wherein the second material includes one of: Pt, Pd, Ir, Ru, or Ni.
  • forming the first structure comprises a stack of three materials including a first material adjacent to the interconnect, a second material adjacent to the first material but not in contact with the interconnect, and third material adjacent to the second material and the second structure, wherein the first material includes one or more of: Co, Ni, Fe, or Heusler alloy, wherein the second material comprises Ru; and wherein the third material includes one or more of Co, Ni, Fe, or Heusler alloy.
  • the interconnect is to generate spin Hall effect (SHE).
  • SHE spin Hall effect
  • the interconnect includes one or more or: b-Tantalum (b-Ta), Ta, b- Tungsten (b-W), W, Platinum (Pt), Copper (Cu) doped with elements including on of Iridium, Bismuth or elements of 3d, 4d, 5d and 4f, 5f periodic groups.
  • the interconnect comprises a spin orbit material which includes one or more of: graphene, TiS ⁇ . WS? modify VloS ⁇ .
  • the interconnect comprises spin orbit material which includes one of a 2D material or a 3D material, wherein the 3D material is thinner than the 2D material.
  • the interconnect comprises a spin orbit material which includes materials that exhibit Rashba-Bychkov effect.
  • the magnetic junction is one of a spin valve or a magnetic tunneling junction (MTJ).
  • the magnet of the first structure is a paramagnet which includes one or more of: Pt, Pd, W, Ce, Al, Li, Mg, Na, Cr 2 0 3 , CoO, Dy, Dy 2 0, Er, Er 2 0 3 , Eu, EU 2 0 3 , Gd, Gd 2 0 3 , FeO, Fe 2 0 3 , Nd, Nd 2 0 3 , K0 2 , Pr, Sm, Sm 2 0 3 , Tb, Tb 2 0 3 , Tm, Tm 2 0 3 , or V 2 0 3 .
  • the magnet of the first structure is a paramagnet which comprises dopants which include one or more of: Ce, Cr, Mn, Nb, Mo, Tc, Re, Nd,
  • the second and third structures have a second dimension which is smaller than the dimension of the first structure. In some embodiments, the second and third structures have a second dimension which is equal to the dimension of the first structure.
  • Fig. 14 illustrates a smart device or a computer system or a SoC (System-on- Chip) 1600 with a magnetic junction having an extended free magnet layer than a traditional magnet, according to some embodiments of the disclosure.
  • SoC System-on- Chip
  • the transistors in various circuits and logic blocks described here are metal oxide semiconductor (MOS) transistors or their derivatives, where the MOS transistors include drain, source, gate, and bulk terminals.
  • the transistors and/or the MOS transistor derivatives also include Tri-Gate and FinFET transistors, Gate All Around Cylindrical Transistors, Tunneling FET (TFET), Square Wire, or Rectangular Ribbon Transistors, ferroelectric FET (FeFETs), or other devices implementing transistor functionality like carbon nanotubes or spintronic devices.
  • MOSFET symmetrical source and drain terminals i.e., are identical terminals and are interchangeably used here.
  • a TFET device on the other hand, has asymmetric Source and Drain terminals.
  • BJT PNP/NPN Bi-polar junction transistors
  • BiCMOS BiCMOS
  • CMOS complementary metal oxide semiconductor
  • Fig. 14 illustrates a block diagram of an embodiment of a mobile device in which flat surface interface connectors could be used.
  • computing device 1600 represents a mobile computing device, such as a computing tablet, a mobile phone or smart-phone, a wireless-enabled e-reader, or other wireless mobile device. It will be understood that certain components are shown generally, and not all components of such a device are shown in computing device 1600.
  • computing device 1600 includes first processor 1610 with a magnetic junction having an extended free magnet layer (e.g., one or more devices of any one of Figs. 5-8), according to some embodiments discussed.
  • Other blocks of the computing device 1600 may also include a magnetic junction having an extended free magnet layer (e.g., one or more devices of any one of Figs. 5-8), according to some embodiments.
  • the various embodiments of the present disclosure may also comprise a network interface within 1670 such as a wireless interface so that a system embodiment may be incorporated into a wireless device, for example, cell phone or personal digital assistant.
  • a network interface within 1670 such as a wireless interface so that a system embodiment may be incorporated into a wireless device, for example, cell phone or personal digital assistant.
  • processor 1610 can include one or more physical devices, such as microprocessors, application processors,
  • microcontrollers programmable logic devices, or other processing means.
  • the processing operations performed by processor 1610 include the execution of an operating platform or operating system on which applications and/or device functions are executed.
  • the processing operations include operations related to I/O (input/output) with a human user or with other devices, operations related to power management, and/or operations related to connecting the computing device 1600 to another device.
  • the processing operations may also include operations related to audio I/O and/or display I/O.
  • computing device 1600 includes audio subsystem 1620, which represents hardware (e.g., audio hardware and audio circuits) and software (e.g., drivers, codecs) components associated with providing audio functions to the computing device. Audio functions can include speaker and/or headphone output, as well as microphone input. Devices for such functions can be integrated into computing device 1600, or connected to the computing device 1600. In one embodiment, a user interacts with the computing device 1600 by providing audio commands that are received and processed by processor 1610.
  • audio subsystem 1620 represents hardware (e.g., audio hardware and audio circuits) and software (e.g., drivers, codecs) components associated with providing audio functions to the computing device. Audio functions can include speaker and/or headphone output, as well as microphone input. Devices for such functions can be integrated into computing device 1600, or connected to the computing device 1600. In one embodiment, a user interacts with the computing device 1600 by providing audio commands that are received and processed by processor 1610.
  • computing device 1600 comprises display subsystem 1630.
  • Display subsystem 1630 represents hardware (e.g., display devices) and software (e.g., drivers) components that provide a visual and/or tactile display for a user to interact with the computing device 1600.
  • Display subsystem 1630 includes display interface 1632, which includes the particular screen or hardware device used to provide a display to a user.
  • display interface 1632 includes logic separate from processor 1610 to perform at least some processing related to the display.
  • display subsystem 1630 includes a touch screen (or touch pad) device that provides both output and input to a user.
  • computing device 1600 comprises I/O controller 1640.
  • I/O controller 1640 represents hardware devices and software components related to interaction with a user.
  • I/O controller 1640 is operable to manage hardware that is part of audio subsystem 1620 and/or display subsystem 1630.
  • I/O controller 1640 illustrates a connection point for additional devices that connect to computing device 1600 through which a user might interact with the system.
  • devices that can be attached to the computing device 1600 might include microphone devices, speaker or stereo systems, video systems or other display devices, keyboard or keypad devices, or other I/O devices for use with specific applications such as card readers or other devices.
  • I/O controller 1640 can interact with audio subsystem 1620 and/or display subsystem 1630.
  • input through a microphone or other audio device can provide input or commands for one or more applications or functions of the computing device 1600.
  • audio output can be provided instead of, or in addition to display output.
  • display subsystem 1630 includes a touch screen
  • the display device also acts as an input device, which can be at least partially managed by I/O controller 1640.
  • I/O controller 1640 manages devices such as accelerometers, cameras, light sensors or other environmental sensors, or other hardware that can be included in the computing device 1600.
  • the input can be part of direct user interaction, as well as providing environmental input to the system to influence its operations (such as filtering for noise, adjusting displays for brightness detection, applying a flash for a camera, or other features).
  • computing device 1600 includes power management 1650 that manages battery power usage, charging of the battery, and features related to power saving operation.
  • Memory subsystem 1660 includes memory devices for storing information in computing device 1600. Memory can include nonvolatile (state does not change if power to the memory device is interrupted) and/or volatile (state is indeterminate if power to the memory device is interrupted) memory devices. Memory subsystem 1660 can store application data, user data, music, photos, documents, or other data, as well as system data (whether long-term or temporary) related to the execution of the applications and functions of the computing device 1600.
  • Elements of embodiments are also provided as a machine-readable medium (e.g., memory 1660) for storing the computer-executable instructions (e.g., instructions to implement any other processes discussed herein).
  • the machine-readable medium e.g., memory 1660
  • embodiments of the disclosure may be downloaded as a computer program (e.g., BIOS) which may be transferred from a remote computer (e.g., a server) to a requesting computer (e.g., a client) by way of data signals via a communication link (e.g., a modem or network connection).
  • BIOS a computer program
  • a remote computer e.g., a server
  • a requesting computer e.g., a client
  • a communication link e.g., a modem or network connection
  • computing device 1600 comprises connectivity 1670.
  • Connectivity 1670 includes hardware devices (e.g., wireless and/or wired connectors and communication hardware) and software components (e.g., drivers, protocol stacks) to enable the computing device 1600 to communicate with external devices.
  • the computing device 1600 could be separate devices, such as other computing devices, wireless access points or base stations, as well as peripherals such as headsets, printers, or other devices.
  • Connectivity 1670 can include multiple different types of connectivity.
  • the computing device 1600 is illustrated with cellular connectivity 1672 and wireless connectivity 1674.
  • Cellular connectivity 1672 refers generally to cellular network connectivity provided by wireless carriers, such as provided via GSM (global system for mobile communications) or variations or derivatives, CDMA (code division multiple access) or variations or derivatives, TDM (time division multiplexing) or variations or derivatives, or other cellular service standards.
  • Wireless connectivity (or wireless interface) 1674 refers to wireless connectivity that is not cellular, and can include personal area networks (such as Bluetooth, Near Field, etc.), local area networks (such as Wi-Fi), and/or wide area networks (such as WiMax), or other wireless communication.
  • computing device 1600 comprises peripheral connections 1680.
  • Peripheral connections 1680 include hardware interfaces and connectors, as well as software components (e.g., drivers, protocol stacks) to make peripheral connections.
  • the computing device 1600 could both be a peripheral device ("to" 1682) to other computing devices, as well as have peripheral devices ("from” 1684) connected to it.
  • the computing device 1600 commonly has a "docking" connector to connect to other computing devices for purposes such as managing (e.g., downloading and/or uploading, changing, synchronizing) content on computing device 1600.
  • a docking connector can allow computing device 1600 to connect to certain peripherals that allow the computing device 1600 to control content output, for example, to audiovisual or other systems.
  • the computing device 1600 can make peripheral connections 1680 via common or standards-based connectors.
  • Common types can include a Universal Serial Bus (USB) connector (which can include any of a number of different hardware interfaces), DisplayPort including MiniDisplayPort (MDP), High Definition Multimedia Interface (HDMI), Firewire, or other types.
  • USB Universal Serial Bus
  • MDP MiniDisplayPort
  • HDMI High Definition Multimedia Interface
  • Firewire or other types.
  • Example 1 An apparatus comprising: a magnetic junction including: a first structure comprising a magnet with unfixed perpendicular magnetic anisotropy (PMA); a second structure comprising one of a dielectric or metal, the second structure being adjacent to the first structure; a third structure comprising a magnet with fixed PMA, wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; and an interconnect adjacent to the magnetic junction, wherein the interconnect comprises a spin orbit material, and wherein the first structure has a dimension along a length of the interconnect, wherein the dimension is substantially equal to the length of the interconnect.
  • PMA perpendicular magnetic anisotropy
  • Example 2 The apparatus of example 1, wherein the first structure comprises a first material and a second material different from the first material, and wherein the first and second materials are in a stack.
  • Example 3 The apparatus of example 2, wherein the first material includes one of: Co, Ni, Fe, or Heusler alloy.
  • Example 4 The apparatus of example 3, wherein the Heusler alloy includes one or more of Co, Cu, Fe, Ga, Ge, In, Mn, Al, In, Sb, Si, Sn, Ni, Pd, Ru, or V.
  • Example 5 The apparatus of example 2, wherein the second material includes one of: Pt, Pd, Ir, Ru, or Ni.
  • Example 6 The apparatus of example 2, wherein the first material has a thickness in a range of 0.6 nm to 2 nm, and wherein the second material has a thickness in a range of 0.1 nm to 3 nm.
  • Example 7 The apparatus according to any one of preceding examples, wherein the dielectric comprises: Mg and O.
  • Example 8 The apparatus of example 1, wherein the first structure comprises a super lattice including a first material and a second material, wherein the first material includes one of: Co, Ni, Fe, or Heusler alloy, and wherein the second material includes one of: Pt, Pd, Ir, Ru, or Ni.
  • Example 9 The apparatus of example 1, wherein the first structure comprises a stack of three materials including a first material adjacent to the interconnect, a second material adjacent to the first material but not in contact with the interconnect, and third material adjacent to the second material and the second structure, wherein the first material includes one or more of: Co, Ni, Fe, or Heusler alloy, wherein the second material comprises Ru; and wherein the third material includes one or more of Co, Ni, Fe, or Heusler alloy.
  • Example 10 The apparatus according to any one of preceding examples, wherein the interconnect is to generate spin Hall effect (SHE).
  • SHE spin Hall effect
  • Example 11 The apparatus according to any one of preceding examples, wherein the interconnect includes one or more or: b-Tantalum (b-Ta), Ta, b-Tungsten (b-W), W, Platinum (Pt), Copper (Cu) doped with elements including on of Iridium, Bismuth or elements of 3d, 4d, 5d and 4f, 5f periodic groups; Ti, S, W, Mo, Se, B, Sb, Re, La, C, P, La, As, Sc, O, Bi, Ga, Al, Y, In, Ce, Pr, Nd, F, Ir, Mn, Pd, Sr, or F.
  • b-Tantalum b-Ta
  • Ta b-Tungsten
  • W Platinum
  • Cu Copper
  • Example 12 The apparatus of example 1, wherein the spin orbit material includes one of a 2D material or a 3D material, wherein the 3D material is thinner than the 2D material.
  • Example 13 The apparatus of example 1, wherein the spin orbit material includes materials that exhibit Rashba-Bychkov effect.
  • Example 14 The apparatus according to any one of preceding examples, wherein the magnetic junction is one of a spin valve or a magnetic tunneling junction (MTJ).
  • the magnetic junction is one of a spin valve or a magnetic tunneling junction (MTJ).
  • Example 15 The apparatus of example 1, wherein the magnet of the first structure is a paramagnet which includes one or more of: Pt, Pd, W, Ce, Al, Li, Mg, Na, Cr, Co, Dy, O, Er, Eu, Eu, Gd, Fe, Nd, K, Pr, Sm, Tb, Tm, or V.
  • Example 16 The apparatus of example 1, wherein the magnet of the first structure is a paramagnet which comprises dopants which include one or more of: Ce, Cr, Mn, Nb, Mo, Tc, Re, Nd, Gd, Tb, Dy, Ho, Er, Tm, or Yb.
  • dopants which include one or more of: Ce, Cr, Mn, Nb, Mo, Tc, Re, Nd, Gd, Tb, Dy, Ho, Er, Tm, or Yb.
  • Example 17 The apparatus of example 1, wherein the second and third structures have a second dimension which is smaller than the dimension of the first structure.
  • Example 18 The apparatus of example 1, wherein the second and third structures have a second dimension which is equal to the dimension of the first structure.
  • Example 19 A system comprising: a memory; a processor coupled to the memory, the processor having a spin wave switch, which comprises an apparatus according to any one of apparatus examples 1 to 18; and a wireless interface to allow the processor to communicate with another device.
  • Example 20 An apparatus comprising: a magnetic junction including: a first structure comprising a magnet with an unfixed in-plane magnetic anisotropy relative to an x- y plane of a device; a second structure comprising one of a dielectric or metal, the second structure being adjacent to the first structure; a third structure comprising a magnet with fixed in-plane magnetic anisotropy, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; and an interconnect adjacent to the magnetic junction, wherein the interconnect comprises a spin orbit material, and wherein the first structure has a dimension along a length of the interconnect, and wherein the dimension is substantially equal to the length of the interconnect.
  • Example 21 The apparatus of example 20 according to any one of claims 2 to 18.
  • Example 22 A system comprising: a memory; a processor coupled to the memory, the processor having a spin wave switch, which comprises an apparatus according to any one of apparatus examples 20 to 21; and a wireless interface to allow the processor to communicate with another device.
  • Example 23 A method comprising: forming a magnetic junction including: forming a first structure comprising a magnet with an unfixed perpendicular magnetic anisotropy (PMA) relative to an x-y plane of a device; forming a second structure comprising one of a dielectric or metal, the second structure being adjacent to the first structure; and forming a third structure comprising a magnet with fixed PMA relative to the x-y plane of the device, and wherein the third structure is adjacent to the second structure such that the second structure is between the first and third structures; and forming an interconnect adjacent to the magnetic junction; and forming a fourth structure comprising a magnet with fixed PMA and wherein the first structure has a dimension along a length of the interconnect, wherein the dimension is substantially equal to the length of the interconnect.
  • PMA perpendicular magnetic anisotropy
  • Example 24 The method of example 23, wherein forming the first structure comprises forming a first material and a second material different from the first material, wherein the first and second materials are in a stack.
  • Example 25 The method of example 24, wherein the first material includes one of: Co, Ni, Fe, or Heusler alloy.
  • Example 26 The method of example 25, wherein the Heusler alloy includes one or more of Co, Cu, Fe, Ga, Ge, In, Mn, Al, In, Sb, Si, Sn, Ni, Pd, Ru, or V.
  • Example 27 The method of example 24, wherein the second material includes one of: Pt, Pd, Ir, Ru, or Ni.
  • Example 28 The method of example 24, wherein the first material has a thickness in a range of 0.6 nm to 2 nm, and wherein the second material has a thickness in a range of 0.1 nm to 3 nm.
  • Example 29 The method of example 24, wherein the dielectric comprises:
  • Example 30 The method of example 23, wherein the first structure comprises a super lattice including a first material and a second material, wherein the first material includes one of: Co, Ni, Fe, or Heusler alloy, and wherein the second material includes one of: Pt, Pd, Ir, Ru, or Ni.
  • Example 31 The method of example 23, wherein the first structure comprises a stack of three materials including a first material adjacent to the interconnect, a second material adjacent to the first material but not in contact with the interconnect, and third material adjacent to the second material and the second structure, wherein the first material includes one or more of: Co, Ni, Fe, or Heusler alloy, wherein the second material comprises Ru; and wherein the third material includes one or more of Co, Ni, Fe, or Heusler alloy.
  • Example 32 The method according to any one of preceding method examples, wherein the interconnect is to generate spin Hall effect (SHE).
  • SHE spin Hall effect
  • Example 33 The method according to any one of preceding method examples, wherein the interconnect includes one or more or: b-Tantalum (b-Ta), Ta, b- Tungsten (b-W), W, Platinum (Pt), Copper (Cu) doped with elements including on of Iridium, Bismuth or elements of 3d, 4d, 5d and 4f, 5f periodic groups; Ti, S, W, Mo, Se, B, Sb, Re, La, C, P, La, As, Sc, O, Bi, Ga, Al, Y, In, Ce, Pr, Nd, F, Ir, Mn, Pd, Sr, or F.
  • b-Tantalum b-Ta
  • Ta b-Tungsten
  • W Platinum
  • Cu Copper
  • Example 34 The method of example 23, wherein the interconnect comprises spin orbit material which includes one of a 2D material or a 3D material, wherein the 3D material is thinner than the 2D material.
  • Example 35 The method of example 23, wherein the interconnect comprises a spin orbit material which includes materials that exhibit Rashba-Bychkov effect.
  • Example 36 The method according to any one of preceding method examples, wherein the magnetic junction is one of a spin valve or a magnetic tunneling junction (MTJ).
  • MTJ magnetic tunneling junction
  • Example 37 The method of example 23, wherein the magnet of the first structure is a paramagnet which includes one or more of: Pt, Pd, W, Ce, Al, Li, Mg, Na, Cr, Co, Dy, O, Er, Eu, Eu, Gd, Fe, Nd, K, Pr, Sm, Tb, Tm, or V.
  • Example 38 The method of example 23, wherein the magnet of the first structure is a paramagnet which comprises dopants which include one or more of: Ce, Cr, Mn, Nb, Mo, Tc, Re, Nd, Gd, Tb, Dy, Ho, Er, Tm, or Yb.
  • Example 39 The method of example 23, wherein the second and third structures have a second dimension which is smaller than the dimension of the first structure.
  • Example 40 The method of example 23, wherein the second and third structures have a second dimension which is equal to the dimension of the first structure.

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)

Abstract

L'invention concerne un appareil qui comprend : une jonction magnétique comprenant : une première structure comprenant un aimant présentant une anisotropie magnétique perpendiculaire non fixe (PMA) par rapport à un plan d'un dispositif ; une seconde structure comprenant un diélectrique ou un métal, la seconde structure étant adjacente à la première structure ; une troisième structure comprenant un aimant à PMA fixe, la troisième structure étant adjacente à la seconde structure de sorte que la seconde structure se trouve entre les première et troisième structures ; et une interconnexion adjacente à la jonction magnétique, l'interconnexion comprenant un matériau spin-orbite, et la première structure comportant une dimension le long d'une longueur de l'interconnexion, la dimension étant sensiblement égale à la longueur de l'interconnexion.
PCT/US2017/067104 2017-12-18 2017-12-18 Mémoire à base de couplage spin-orbite à structure d'aimant libre étendue WO2019125387A1 (fr)

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US20140070341A1 (en) * 2012-09-11 2014-03-13 Headway Technologies, Inc. Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM
US20140084398A1 (en) * 2012-09-26 2014-03-27 Kaan Oguz Perpendicular mtj stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
US20140175582A1 (en) * 2012-12-20 2014-06-26 Dmytro Apalkov Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy
US20150171316A1 (en) * 2013-12-17 2015-06-18 Qualcomm Incorporated Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (mtj)

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US20150171316A1 (en) * 2013-12-17 2015-06-18 Qualcomm Incorporated Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (mtj)

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