WO2019125384A1 - Mémoire basée sur un couplage spin-orbite avec aimant isolant - Google Patents

Mémoire basée sur un couplage spin-orbite avec aimant isolant Download PDF

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Publication number
WO2019125384A1
WO2019125384A1 PCT/US2017/067087 US2017067087W WO2019125384A1 WO 2019125384 A1 WO2019125384 A1 WO 2019125384A1 US 2017067087 W US2017067087 W US 2017067087W WO 2019125384 A1 WO2019125384 A1 WO 2019125384A1
Authority
WO
WIPO (PCT)
Prior art keywords
magnet
interconnect
magnetic
spin
adjacent
Prior art date
Application number
PCT/US2017/067087
Other languages
English (en)
Inventor
Tanay GOSAVI
Chia-Ching Lin
Ashish Verma PENUMATCHA
Sasikanth Manipatruni
Gary A. ALLEN
Ian A. Young
Dmitri E. Nikonov
Original Assignee
Intel Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corporation filed Critical Intel Corporation
Priority to PCT/US2017/067087 priority Critical patent/WO2019125384A1/fr
Publication of WO2019125384A1 publication Critical patent/WO2019125384A1/fr

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Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1677—Verifying circuits or methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Abstract

L'invention concerne un appareil comprenant : une jonction magnétique comportant une structure comprenant un aimant non fixé ; une structure comprenant un aimant isolant ou semi-isolant, la structure étant adjacente à la jonction magnétique ; et une interconnexion adjacente à la structure.
PCT/US2017/067087 2017-12-18 2017-12-18 Mémoire basée sur un couplage spin-orbite avec aimant isolant WO2019125384A1 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
PCT/US2017/067087 WO2019125384A1 (fr) 2017-12-18 2017-12-18 Mémoire basée sur un couplage spin-orbite avec aimant isolant

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/US2017/067087 WO2019125384A1 (fr) 2017-12-18 2017-12-18 Mémoire basée sur un couplage spin-orbite avec aimant isolant

Publications (1)

Publication Number Publication Date
WO2019125384A1 true WO2019125384A1 (fr) 2019-06-27

Family

ID=66993690

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2017/067087 WO2019125384A1 (fr) 2017-12-18 2017-12-18 Mémoire basée sur un couplage spin-orbite avec aimant isolant

Country Status (1)

Country Link
WO (1) WO2019125384A1 (fr)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113299822A (zh) * 2021-04-15 2021-08-24 长江先进存储产业创新中心有限责任公司 一种磁存储器及其制备方法
CN113838967A (zh) * 2021-08-30 2021-12-24 电子科技大学 一种合金/磁绝缘体自旋异质结及其制备方法和应用
TWI818402B (zh) * 2021-01-04 2023-10-11 台灣積體電路製造股份有限公司 記憶體元件及其製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120267733A1 (en) * 2011-04-25 2012-10-25 International Business Machines Corporation Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory
US20140070341A1 (en) * 2012-09-11 2014-03-13 Headway Technologies, Inc. Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM
US20140084398A1 (en) * 2012-09-26 2014-03-27 Kaan Oguz Perpendicular mtj stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
US20140175582A1 (en) * 2012-12-20 2014-06-26 Dmytro Apalkov Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy
US20150171316A1 (en) * 2013-12-17 2015-06-18 Qualcomm Incorporated Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (mtj)

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120267733A1 (en) * 2011-04-25 2012-10-25 International Business Machines Corporation Magnetic stacks with perpendicular magnetic anisotropy for spin momentum transfer magnetoresistive random access memory
US20140070341A1 (en) * 2012-09-11 2014-03-13 Headway Technologies, Inc. Minimal Thickness Synthetic Antiferromagnetic (SAF) Structure with Perpendicular Magnetic Anisotropy for STT-MRAM
US20140084398A1 (en) * 2012-09-26 2014-03-27 Kaan Oguz Perpendicular mtj stacks with magnetic anisotropy enhancing layer and crystallization barrier layer
US20140175582A1 (en) * 2012-12-20 2014-06-26 Dmytro Apalkov Method and system for providing magnetic junctions having engineered perpendicular magnetic anisotropy
US20150171316A1 (en) * 2013-12-17 2015-06-18 Qualcomm Incorporated Hybrid synthetic antiferromagnetic layer for perpendicular magnetic tunnel junction (mtj)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI818402B (zh) * 2021-01-04 2023-10-11 台灣積體電路製造股份有限公司 記憶體元件及其製造方法
CN113299822A (zh) * 2021-04-15 2021-08-24 长江先进存储产业创新中心有限责任公司 一种磁存储器及其制备方法
CN113299822B (zh) * 2021-04-15 2023-06-09 长江先进存储产业创新中心有限责任公司 一种磁存储器及其制备方法
CN113838967A (zh) * 2021-08-30 2021-12-24 电子科技大学 一种合金/磁绝缘体自旋异质结及其制备方法和应用
CN113838967B (zh) * 2021-08-30 2023-04-18 电子科技大学 一种合金/磁绝缘体自旋异质结及其制备方法和应用

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