WO2017111895A1 - Appareil et procédé de commutation d'onde de spin - Google Patents

Appareil et procédé de commutation d'onde de spin Download PDF

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Publication number
WO2017111895A1
WO2017111895A1 PCT/US2015/067043 US2015067043W WO2017111895A1 WO 2017111895 A1 WO2017111895 A1 WO 2017111895A1 US 2015067043 W US2015067043 W US 2015067043W WO 2017111895 A1 WO2017111895 A1 WO 2017111895A1
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layer
spin wave
nanowire
spin
exchange coupling
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PCT/US2015/067043
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English (en)
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Christopher J. WIEGAND
Dmitri E. Nikonov
Ian A. Young
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Intel Corporation
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Priority to PCT/US2015/067043 priority Critical patent/WO2017111895A1/fr
Publication of WO2017111895A1 publication Critical patent/WO2017111895A1/fr

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N30/00—Piezoelectric or electrostrictive devices
    • H10N30/20—Piezoelectric or electrostrictive devices with electrical input and mechanical output, e.g. functioning as actuators or vibrators

Definitions

  • Fig. 1A illustrates scheme 100 of spin wave field transistor where transmitted or reflected spin waves are formed depending on the gate voltage VG.
  • the spin wave switching mechanism is based on switching magnetic anisotropy in a FM wire (i.e., switching based on magnetostrictive change of anisotropy).
  • the principle of operation is based on a piezoelectric (PZ) material which is placed adjacent to an FM wire.
  • Fig. IB illustrates a set of plots 120 and 130 showing magnetic anisotropy versus position in the FM wire according to the applied voltage VG.
  • Plot 120 illustrates the case when VG is greater than zero
  • plot 130 illustrates athe case when VG is less than zero.
  • This spin wave switching scheme is a volatile scheme (i.e., data is lost when applied voltage is removed).
  • Fig. 1A illustrates a scheme with spin wave field transistor where transmitted or reflected spin waves are formed depending on a gate voltage VG.
  • Fig. IB illustrates a set of plots showing magnetic anisotropy versus position in a Ferromagnetic (FM) wire.
  • Figs. 2A illustrates a bi-stable magnetic element and quad-stable magnetic elements which can form building blocks of a spin wave switch scheme, according to some embodiments of the disclosure.
  • Fig. 2B illustrates bi-stable elements, with piezoelectric layers, which can form building blocks of a spin wave switch scheme, according to some embodiments of the disclosure.
  • Fig. 2C illustrates a quad-stable element, with a piezoelectric layer, which can form building blocks of a spin wave switch scheme, according to some embodiments of the disclosure.
  • Fig. 2D illustrates quad-stable elements, with Spin Orbit Coupling layers, which can form building blocks of a spin wave switch scheme, according to some embodiments of the disclosure.
  • Fig. 2E illustrates a quad-stable element with a wire to provide magnetic field, according to some embodiments of the disclosure.
  • Fig. 3A illustrates a top view of a spin wave switch scheme with in-plane magnets, according to some embodiments of the disclosure.
  • Fig. 3B illustrates a spin wave switch scheme with a quad-stable element, according to some embodiments of the disclosure.
  • Fig. 4 illustrates a top view of a spin wave switch scheme with in-plane magnets, according to some embodiments of the disclosure.
  • Fig. 5A illustrates a top view of the spin wave switch scheme of Fig. 3A in which the propagation of spin wave is controlled to generate a low logic state at a spin wave detector, according to some embodiments of the disclosure.
  • Fig. 5B illustrates a top view of the spin wave switch scheme of Fig. 3A in which the propagation of spin wave is controlled to generate a high logic state at the spin wave detector, according to some embodiments of the disclosure.
  • Fig. 6 illustrates a spin wave switch scheme with out-of-plane magnets and controllable by a magnetic junction, according to some embodiments of the disclosure.
  • Fig. 7 illustrates a side view of a spin wave switch scheme controllable by a magnetic junction, according to some embodiments of the disclosure.
  • Fig. 8 illustrates micro-magnetic simulation based plots for the spin wave switch scheme of Fig. 3B showing spin wave propagation (in the x, y, and -z directions, respectively) at an initial state with the nanomagnets and FM wires having parallel magnetizations, according to some embodiments of the disclosure.
  • Fig. 9 illustrates micro-magnetic simulation based simulation plots for the spin wave switch scheme of Fig. 3B showing magnetization (in the x, y, and -z directions, respectively) at a final state with the nanomagnets and FM wires having parallel
  • Fig. 10 illustrates micro-magnetic simulation based plots for the spin wave switch of Fig. 3B showing magnetization (in the x, y, and -z directions, respectively) at an initial state with the nanomagnets having perpendicular magnetizations relative to the magnetizations of the FM wires, according to some embodiments of the disclosure.
  • Fig. 11 illustrates micro-magnetic simulation based plots for the spin wave switch scheme of Fig. 3B showing magnetization (in the x, y, and -z directions, respectively) at a final state with the nanomagnets having perpendicular magnetizations relative to magnetizations of the FM wires, according to some embodiments of the disclosure.
  • Fig. 12 illustrates a flowchart of a method of using the spin wave switch scheme, according to some embodiments of the disclosure.
  • Fig. 13 illustrates a smart device or a computer system or a SoC (System-on-
  • a spin wave switch formed by introducing a break (or gap) in a ferromagnet (FM) wire (also referred to as FM nanowire) and inserting a nonmagnetic element (also referred to as a nanomagnet) in the break.
  • the FM wire and the nanomagnet can be coupled by exchange interaction.
  • an exchange coupling layer formed of Ru, Cu, or Mo can be used for exchange interaction between the FM nanowire and the nanomagnet.
  • the transmission of spin waves is high (e.g., the spin waves traverse through the nonmagnetic element and the nanomagnet).
  • the transmission of spin waves is low (e.g., most spin waves do no traverse through the exchange coupling layer and the nanomagnet).
  • the spin wave switch of the various embodiments is a non-volatile switch.
  • the magnetization state persists.
  • the spin wave switch of Figs. 1A-B are volatile. Multiple mechanisms of switching the magnetization are possible with the spin wave switch of the various embodiments.
  • the switching mechanism of the switch of Figs. 1A-B is a single switching mechanism. As such, any FM material can be switched with the spin wave switch scheme of the various embodiments and is not limited to merely materials with high magnetostriction coefficients, in accordance with some embodiments.
  • signals are represented with lines. Some lines may be thicker, to indicate more constituent signal paths, and/or have arrows at one or more ends, to indicate primary information flow direction. Such indications are not intended to be limiting. Rather, the lines are used in connection with one or more exemplary embodiments to facilitate easier understanding of a circuit or a logical unit. Any represented signal, as dictated by design needs or preferences, may actually comprise one or more signals that may travel in either direction and may be implemented with any suitable type of signal scheme.
  • connection means a direct connection, such as electrical, mechanical, or magnetic connection between the things that are connected, without any intermediary devices.
  • coupled means a direct or indirect connection, such as a direct electrical, mechanical, or magnetic connection between the things that are connected or an indirect connection, through one or more passive or active intermediary devices.
  • circuit or “module” may refer to one or more passive and/or active components that are arranged to cooperate with one another to provide a desired function.
  • signal may refer to at least one current signal, voltage signal, magnetic signal, or data/clock signal.
  • the meaning of "a,” “an,” and “the” include plural references.
  • the meaning of "in” includes “in” and "on.”
  • scaling generally refers to converting a design (schematic and layout) from one process technology to another process technology and subsequently being reduced in layout area.
  • scaling generally also refers to downsizing layout and devices within the same technology node.
  • scaling may also refer to adjusting (e.g., slowing down or speeding up - i.e. scaling down, or scaling up respectively) of a signal frequency relative to another parameter, for example, power supply level.
  • substantially generally refer to being within +/- 10% of a target value.
  • phrases “A and/or B” and “A or B” mean (A), (B), or (A and B).
  • phrase “A, B, and/or C” means (A), (B), (C), (A and B), (A and C), (B and C), or (A, B and C).
  • the transistors in various circuits and logic blocks described here are metal oxide semiconductor (MOS) transistors or their derivatives, where the MOS transistors include drain, source, gate, and bulk terminals.
  • the transistors and/or the MOS transistor derivatives also include Tri-Gate and FinFET transistors, Gate All Around Cylindrical Transistors, Tunneling FET (TFET), Square Wire, or Rectangular Ribbon Transistors, ferroelectric FET (FeFETs), or other devices implementing transistor functionality like carbon nanotubes or spintronic devices.
  • MOSFET symmetrical source and drain terminals i.e., are identical terminals and are interchangeably used here.
  • a TFET device on the other hand, has asymmetric Source and Drain terminals.
  • BJT PNP/NPN Bi-polar junction transistors
  • BiCMOS BiCMOS
  • CMOS complementary metal oxide semiconductor
  • Figs. 2A illustrates a bi-stable magnetic element 200a and quad-stable magnetic elements 200b and 200c which can form building blocks of a spin wave switch scheme, according to some embodiments.
  • bi-stable magnetic element 200a is a ferromagnet 201 that has non-volatile states along the long axis as shown by the arrow indicating magnetization.
  • quad-stable magnetic element 200b has non-volatile states along every arm of the cross 202.
  • the magnetization direction of quad-stable magnetic element 200b extends along a direction indicated by the arrow in Fig. 2A.
  • quad-stable magnetic element 200c has non-volatile states along every arm of cross 203. The magnetization direction of quad-stable magnetic element 200c extends from south to north, in this example.
  • the magnets of the bi-stable and quad-stable elements are identical to each other.
  • 200a, 200b, and 200c are formed of from CFGG (i.e., Cobalt (Co), Iron (Fe), Germanium (Ge), or Gallium (Ga) or a combination of them).
  • the magnets of bistable and quad-stable elements 200a, 200b, and 200c are formed from Heusler alloys.
  • Heusler alloys are ferromagnetic metal alloys based on a Heusler phase. Heusler phases are intermetallic with certain composition and face-centered cubic crystal structure. The ferromagnetic property of the Heusler alloys are a result of a double-exchange mechanism between neighboring magnetic ions.
  • the magnets of the bi-stable and quad-stable elements are identical to each other.
  • Heusler alloys are one of: Cu 2 MnAl, Cu 2 MnIn, Cu 2 MnSn, Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa Co 2 MnAl, Co 2 MnSi, Co 2 MnGa, Co 2 MnGe, Pd 2 MnAl, Pd 2 MnIn, Pd 2 MnSn, Pd 2 MnSb, Co 2 FeSi, Co 2 FeAl, Fe 2 VAl, Mn 2 VGa, Co 2 FeGe, MnGa, or MnGaRu.
  • Heusler alloys are one of: Cu 2 MnAl, Cu 2 MnIn, Cu 2 MnSn, Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa Co 2 MnAl, Co 2 MnSi, Co 2 MnGa, Co 2 MnGe
  • the magnets of the bi-stable and quad-stable elements are formed with a sufficiently high anisotropy (Hk) and sufficiently low magnetic saturation (Ms) to increase injection of spin currents.
  • Magnetic saturation M s is generally the state reached when an increase in applied external magnetic field H cannot increase the magnetization of the material (i.e., total magnetic flux density B substantially levels off).
  • sufficiently low M s refers to M s less than 200 kA/m (kilo- Amperes per meter).
  • Anisotropy Hk generally refers to the material property which is directionally dependent. Materials with high Hk are materials with material properties that are highly directionally dependent. Here, sufficiently high Hk in context of Heusler alloys is considered to be greater than 2000 Oe (Oersted).
  • Fig. 2B illustrates bi-stable elements 220a and 220b, with piezoelectric layers, which can form building blocks of a spin wave switch scheme, according to some embodiments. It is pointed out that those elements of Fig. 2B having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • bi-stable element 220a/b is formed of layers of ferromagnet (FM) 221, Piezoelectric layer 222, and metal contact 223 coupled together as shown.
  • FM 221 and FM 221b are made of the same materials as FM 201 of Fig. 2B (i.e., bi-stable element 200a).
  • Piezoelectric layer 222 provides a piezoelectric effect upon applied voltage.
  • Piezoelectric layer 222 is formed of poly crystalline ferroelectric ceramics.
  • Piezoelectric layer 222 is formed of: zirconate titanate PZT (e.g., Pb(Zro.2 Tio.sXb); BaTiC , or CoFeO.
  • PZT zirconate titanate
  • BaTiC zirconate titanate
  • CoFeO CoFeO
  • other materials may be used for forming Piezoelectric layer 222.
  • materials such as PZT-5, PZT-4, PZNPT, PMNPT, BiFeCb; ⁇ 4 ⁇ 3 ⁇ 2; Polyvinylidene fluoride, and PVDF can be used for forming Piezoelectric layer 222.
  • metal contact 223 is made of non-magnetic metals such as Copper (Cu).
  • a switching device e.g., an n-type transistor MNl
  • a switching device e.g., an n-type transistor MNl
  • MONl MOS-stable element
  • FM 221 of bi-stable element 220a/b switches between in-plane (see magnetization direction of FM 221) to out-of-plane (see magnetic direction of FM 221b) depending on the applied voltage on metal contact 223. This change in property of FM 221 (and 221b) is because of magnetostriction.
  • Magnetostriction is a property of ferromagnetic materials that causes them to change their shape or dimensions during the process of magnetization.
  • FM 221 of bi-stable element 220a/b stays in an unstable switched state while the stimulus is on, and returns to a stable non-volatile stage when the stimulus is off.
  • Fig. 2C illustrates quad-stable element 230, with piezoelectric layers, which can form building blocks of a spin wave switch scheme, according to some embodiments. It is pointed out that those elements of Fig. 2C having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • quad-stable element 230 is similar to bi-stable element 220 except that
  • FM 221/221b is replaced with quad-stable FM 203.
  • bi-axial magnetostriction strain is applied to FM 203 by Piezoelectric layer 222 when a voltage is applied to Piezoelectric layer 222 via the transistor MNl.
  • magnetization of FM 203 can be switched by magnetostriction strain.
  • FM 203 of the quad- stable element 230 stays in an unstable switched state while the stimulus is on, and returns to a stable non-volatile state when the stimulus is off, where the stimulus is provided by transistor MNl .
  • Fig. 2D illustrates quad-stable elements 240a/b, with Spin Orbit Coupling
  • quad-stable elements 240a/b include quad-stable FM
  • quad-stable element 240a positive voltage Vdd is applied to metal contact 242 and negative voltage -Vdd is applied to metal contact 244, while in quad-stable elements 240b positive voltage Vdd is applied to metal contact 242 and negative voltage -Vdd is applied to metal contact 244.
  • SOC layer 241 is a layer that is operable to exhibit spin
  • SOC layer 241 is made of one or more of ⁇ - Tantalum ( ⁇ -Ta), Ta, ⁇ -Tungsten ( ⁇ -W), W, Pt, Copper (Cu) doped with elements such as Iridium, Bismuth and any of the elements of 3d, 4d, 5d, 4f, and 5f periodic groups in the Periodic Table which may exhibit high spin orbit coupling.
  • SOC layer 241 is coupled to high conductivity non-magnetic metal(s) 242-245 to reduce the resistance of SOC layer 241.
  • non-magnetic metals 242-245 are formed from one or more of: Cu, Co, a-Ta, Al, CuSi, or NiSi.
  • spin-to-charge conversion is achieved by SOC layer
  • Ic Inverse Rashba-Edelstein Effect
  • Ic Inverse SHE
  • Table 1 summarizes transduction mechanisms for converting spin current to charge current and charge current to spin current for bulk materials and interfaces.
  • Table 1 Transduction mechanisms for Spin to Charge and Charge to Spin Conversion using SOC
  • SOC layer 241 comprises layers of materials exhibiting inverse spin orbit coupling (ISOC) such as one of inverse SHE (ISHE) or inverse Rashba- Edelstein effect (IREE).
  • ISOC inverse spin orbit coupling
  • SOC layer 241 comprises a stack of layers with materials exhibiting IREE and ISHE effects.
  • SOC layer 241 comprises a metal layer, such as a layer of Copper (Cu), Silver (Ag), or Gold (Au), which is coupled to FM 203.
  • the metal layer is a non-alloy metal layer.
  • SOC layer 241 also comprises layer(s) of a surface alloy, e.g. Bismuth (Bi) on Ag coupled to the metal layer.
  • the surface alloy is a templating metal layer to provide a template for forming FM 203.
  • the metal of the metal layer which is directly coupled to FM 203 is a noble metal (e.g., Ag, Cu, or Au) doped with other elements for group 4d and/or 5d of the Periodic Table.
  • the surface alloy is one of: Bi-Ag, Antimony-Bismuth
  • one of the metals of the surface alloy is an alloy of heavy metal or of materials with high SOC strength, where the SOC strength is directly proportional to the fourth power of the atomic number of the metal.
  • the crystals of Ag and Bi of SOC layer 241 have lattice mismatch (i.e., the distance between neighboring atoms of Ag and Bi is different).
  • the surface alloy is formed with surface corrugation resulting from the lattice mismatch, (i.e., the positions of Bi atoms are offset by varying distance from a plane parallel to a crystal plane of the underlying metal).
  • the surface alloy is a structure not symmetric relative to the mirror inversion defined by a crystal plane. This inversion asymmetry and/or material properties lead to spin-orbit coupling in electrons near the surface (also referred to as the Rashba effect).
  • charge current L is generated.
  • BiAg2/PbAg2 of SOC layer 241 comprises of a high density 2D electron gas with high Rashba SOC.
  • the spin orbit mechanism responsible for spin-to-charge conversion is described by Rashba effect in 2D electron gases.
  • 2D electron gases are formed between Bi and Ag, and when current flows through the 2D electron gases, it becomes a 2D spin gas because as charge flows, electrons get polarized.
  • H R a R (k x ⁇ ). ⁇ . . . (3)
  • i3 ⁇ 4 is the Rashba coefficient
  • 'k' is the operator of momentum of electrons
  • z is a unit vector perpendicular to the 2D electron gas
  • ⁇ is the operator of spin of electrons.
  • the IREE effect produces spin-to-charge current conversion around 0.1 with existing materials at lOnm magnet width.
  • the spin-to-charge conversion efficiency can be between 1 and 2.5, in accordance with some embodiments.
  • the net conversion of the drive charge current / d to magnetization dependent charge current is:
  • Fig. 2E illustrates quad-stable element 250, with a wire to provide magnetic field, which can form building blocks of a spin wave switch scheme, according to some embodiments. It is pointed out that those elements of Fig. 2E having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • two layers 251 and 252 of non-magnetic metals e.g., copper
  • Cu are positioned over quad-stable magnet FM 203.
  • layers 251 and 252 are orthogonal to each other. So as not to obscure the embodiments, portion of layers 251 and 252 are shown.
  • Layers 251 and 252 are coupled to a current source (not shown) that causes current to flow through layers 251 and 252. As current flows through layers 251 and/or 252, magnetic field 'FT is produced which switches the magnetization of FM 203.
  • the direction of magnetization switching of FM 203 depends on the direction of current flow through layers 251 and/or 252.
  • the magnetic state of FM 203 remains the previous state when stimulus is removed (e.g., when current is no longer flowing through layers 251 and/or 252).
  • the direction of current flow depends on the applied voltage (e.g., Vdd and -Vdd) on the terminals of layer 251.
  • Fig. 3A illustrates top view 300 of a spin wave switch scheme with in-plane magnets, according to some embodiments of the disclosure.
  • spin wave switch scheme comprises a first FM (FMl) nanowire 301, second FM (FM2) nanowire 302, third FM (FM3) 303, first Exchange Coupling Layer 304, second Exchange Coupling Layer 305, Spin Wave Generator 306, and Spin Wave Detector 307.
  • Spin Wave Generator 306 is coupled to FMl nanowire
  • Spin Wave Generator 306 generates spin waves that traverse towards first Exchange Coupling Layer 304.
  • the generated spin waves are either reflected back towards Spin Wave Generator 306 or allowed to pass through towards FM2 nanowire 302.
  • FMl nanowire 301 and FM2 nanowire 302 are also referred to as spin waveguides.
  • FM3 303 are in-plane magnets (e.g., the magnetization direction is along the plane of the substrate on which FMl and FM2 nanowires are formed). In some embodiments, FM3 303 is a free magnetic layer. The thickness of a ferromagnetic layer may determine its thickness of a ferromagnetic layer.
  • the ferromagnetic layer when the thickness of the ferromagnetic layer is above a certain threshold (depending on the material of the magnet, e.g., approximately 1.5nm for CoFe), then the ferromagnetic layer exhibits magnetization direction which is in-plane. Likewise, when the thickness of the ferromagnetic layer is below a certain threshold (depending on the material of the magnet), then the ferromagnetic layer exhibits magnetization direction which is perpendicular to the plane of the magnetic layer. Other factors may also determine the direction of magnetization.
  • factors such as surface anisotropy (depending on the adjacent layers or a multi-layer composition of the ferromagnetic layer) and/or crystalline anisotropy (depending on stress and the crystal lattice structure modification such as FCC, BCC, or L10- type of crystals, where LI 0 is a type of crystal class which exhibits perpendicular magnetizations), can also determine the direction of magnetization.
  • FMl nanowire 301 FM2 nanowire 302, and/or FM3
  • FMl nanowire 301, FM2 nanowire 302, and/or FM3 303 are formed from Heusler alloys.
  • Heusler alloys are ferromagnetic metal alloys based on a Heusler phase. Heusler phases are intermetallic with certain composition and face-centered cubic crystal structure. The ferromagnetic property of the Heusler alloys are a result of a double-exchange mechanism between neighboring magnetic ions.
  • FMl nanowire 301 FM2 nanowire 302, and/or FM3
  • Heusler alloys are one of: CiteMnAl, Cu 2 MnIn, Cu 2 MnSn, Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa
  • first and second Exchange Coupling Layers 304 and 304 are identical to first and second Exchange Coupling Layers 304 and 304 .
  • first and second Exchange Coupling Layers 304 and 305 are non-magnetic layers of metal.
  • first and second Exchange Coupling Layers 304 and 305 are formed of one of: Ru, Cu, Mo, etc.
  • first and second Exchange Coupling Layers 304 and 305 are thin layers (e.g., lnm to 2nm in thickness).
  • Exchange coupling is a way in which two magnetic atoms (or ions) in a material interact with each other.
  • first exchange coupling occurs between FMl nanowire 301 and FM3 303 via first Exchange Coupling Layer 304.
  • a second exchange coupling occurs between FM3 303 and FM2 nanowire 302.
  • Fig. 5A illustrates top view 500 of the spin wave switch scheme of Fig. 3A in which the spin wave switch scheme is controlled to generate a low logic state at Spin Wave Detector 307, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 5A having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • Spin Wave Generator 306 generates a spin wave which propagates along FMl nanowire 301 towards the first Exchange Coupling Layer 304. This spin wave is called the incident spin wave (SW) and as shown by wave propagation 501.
  • SW the incident spin wave
  • wave propagation 501 when the magnetization of FM3 303 is perpendicular relative to the magnetizations of FMl nanowire 301 and FM2 nanowire 302, no exchange of spin waves occurs between FMl nanowire 301 and FM2 nanowire 302.
  • incident spin wave 501 is reflected back as shown by spin wave propagation 502 in Fig. 5A. In this case, substantially zero or none of the incident spin wave makes it to FM2 nanowire 302.
  • Spin Wave Detector 307 has drastically suppressed amplitudes (e.g., suppressed by lOx). This practically means no spin waves reach Spin Wave Detector 307.
  • Spin Wave Detector 307 indicates a logic 0 state (e.g., phase zero state), in accordance with some embodiments. While the output state detected by Spin Wave Detector 307 is indicated as a digital state of logic 0 when phase is zero, the state detected by Spin Wave Detector 307 does not have to be a digital state in accordance with some embodiments.
  • Spin Wave Detector 307 detects an AC signal with phase and amplitude.
  • FM3 303 is parallel (like the magnetizations of FMl nanowire 301 and FM2 nanowire 302), then exchange coupling occurs between FMl nanowire 301 and FM3 303, and between FM3
  • Fig. 5B illustrates top view 520 of the spin wave switch scheme of Fig. 3A in which the spin wave propagation is controlled to generate a high logic state at Spin Wave Detector 307, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 5B having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • Spin Wave Generator 306 generates spin wave 501
  • incident spin wave (e.g., incident spin wave) which propagates along FMl nanowire 301 towards first Exchange Coupling Layer 304.
  • incident spin wave 501 propagates through FM3 303 and Second Exchange Coupling Layer 305 to FM2 nanowire 302.
  • incident spin wave 501 makes it to FM2 nanowire 302 as indicated by spin wave propagation 522.
  • the amplitude of the spin waves 522 may not be the same as the amplitude of the incident spin wave 501.
  • the amplitude of transmitted spin waves 522 is about half the amplitude of incident spin wave 501.
  • the amplitude of transmitted spin wave 522 is high enough to be detected by Spin Wave Detector 307, in accordance with some embodiments.
  • Spin Wave Detector 307 indicates a logic 1 state (e.g., phase Pi), in accordance with some embodiments. While the output state is indicated as a digital state of logic 1 when phase is Pi ( ⁇ ), the state detected by Spin Wave Detector 307 does not have to be a digital state, in accordance with some embodiments.
  • Spin Wave Detector 307 detects an AC signal with phase and amplitude.
  • FM3 303 forms a spin wave impedance modulator in that an external stimulus can cause change in the spin wave impedance associated with FM3 303. According to various embodiments, it is the direction of magnetization in the (middle) switched element FM3 303 that changes or modulates the impedance, and hence determines what Spin Wave Detector 307 detects.
  • exchange layers 304 and 305 mediate interaction of magnetizations in FMl 301 to FM3 303 and FM3 303 to FM2 302.
  • an external stimulus is used to modulate the impedance of FM3 303.
  • the external stimulus is based on domain wall motion.
  • the external stimulus is provided by one of: spin Hall effect (or Spin Orbit Coupling), spin polarization, spin current reversal, magnetic junction (e.g., magnetic tunnel junction or spin valve), antenna or current carrying wire, magnetostriction, etc. to change the magnetization direction of FM3 303 to affect propagation of spin waves through FM3 303 towards FM2 nanowire 302.
  • Spin Wave Generator 306 comprises an excitation antenna that converts an RF (Radio Frequency) current into an RF field, which in turn generates spin waves in FMl 301.
  • Spin Wave Generator 306 comprises a magnetic junction (e.g., a magnetic tunnel junction or a spin valve) with a free magnetic layer coupled to FMl nanowire 301. In one such embodiment, upon application of an excitation voltage to the magnetic junction, spin waves are generated in FMl nanowire 301.
  • Spin Wave Generator 306 comprises magnetostrictive device which includes a Piezoelectric layer and a magnetostrictive layer, where the magnetostrictive layer is coupled to FMl nanowire 301.
  • the magnetostrictive layer is coupled to FMl nanowire 301.
  • when a voltage is applied to the Piezoelectric layer an electric field is formed in the magnetostrictive layer which in turn generates spin wave in FMl nanowire 301.
  • other types of spin wave generators may be used for implementing Spin Wave Generator 306.
  • Spin Wave Detector 307 comprises a detection antenna that converts the spin waves in FM2 nanowire 302 into representative current.
  • the spin waves in FM2 nanowire 302 generate an RF field around the detection antenna, and this RF field causes current to flow through the detection antenna.
  • spin waves are considered to have traversed from FM1 nanowire 301 to FM2 nanowire 302.
  • spin waves are considered to be blocked from traversing from FM1 nanowire 301 to FM2 nanowire 302.
  • Spin Wave Detector 307 comprises a magnetic junction (e.g., a magnetic tunnel junction or a spin valve) with a free magnetic layer coupled to FM2 nanowire 302.
  • spin waves in FM2 nanowire 302 can switch magnetization of FM2 nanowire 302 and the resistance of the magnetic junction is detected using tunnel magnetoresistance (TMR) effect.
  • TMR tunnel magnetoresistance
  • Spin Wave Detector 307 comprises magnetostrictive device which includes a Piezoelectric layer and a magnetostrictive layer, where the magnetostrictive layer is coupled to FM2 nanowire 302.
  • other types of spin wave detectors may be used for implementing Spin Wave Detector 307.
  • Fig. 3B illustrates a spin wave switch scheme 320 with a quad-stable element, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 3B having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • Spin wave switch scheme 320 is a three-dimensional (3D) view of one embodiment of spin wave switch scheme 300.
  • FM 303 is a quad-stable magnetic device as described with reference to Fig. 2A.
  • an external stimulus is provided by a magnetic junction (e.g., MTJ or spin valve) to FM3 303.
  • An MTJ comprises stacking of a ferromagnetic layer (e.g., Free Magnet) with a tunneling dielectric (e.g., MgO) and another ferromagnetic layer (e.g., Fixed Magnet).
  • FM3 303 forms the free magnetic layer of the MTJ or spin valve, and a voltage applied to the MTJ or spin valve can switch the magnetization of FM3 303.
  • the external stimulus is provided by an excitation antenna or wires as described with reference to Fig. 2E.
  • quad-stable FM 203 of Fig. 2E can be the same as quad-stable element 303 of Fig. 3B, and then depending on the direction of current flowing through antenna element 251, magnetic field is generated around the wires or antenna element 251 and so magnetization of FM3 303 can be switched parallel or perpendicular relative to FMl nanowire 301 and FM2 nanowire 302 in accordance with some embodiments.
  • the magnetic field 'FT can be clockwise or counter clock wise, according to some embodiments.
  • the direction of magnetic field 'FT e.g., clockwise of counter clockwise
  • the external stimulus is provided by magnetostriction via a Piezoelectric layer as described with reference to Figs. 2B-C.
  • quad-stable FM 203 of Fig. 2C can be the same as quad-stable element 303 of Fig. 3B, and then depending on the polarity of the clock signal elk applied to the gate terminal of transistor MNl, Piezoelectric layer 222 applies strain (e.g., electric field) on FM3 303 which can change its magnetization direction according to the applied strain.
  • strain e.g., electric field
  • magnetization of FM3 303 can be switched to parallel or perpendicular relative to the magnetizations of FMl nanaowire 301 and FM2 nanowire 302, in accordance with some embodiments.
  • FM3 303 is a bi-stable magnetic element, as described with reference to Fig. 3A
  • magnetostriction effect as described with reference to Fig. 2B can be used to provide the external stimulus to FM3 303, in accordance with some embodiments.
  • FM layers 221 or 221b are the same as FM3 303, while other layers of the bi-stable elements are formed over FM3 303.
  • the external stimulus is provided by Spin Orbit Coupling (SOC) as described with reference to Fig. 2D.
  • SOC Spin Orbit Coupling
  • quad-stable FM 203 of Fig. 2D can be the same as quad-stable element 303 of Fig. 3B, and then depending on the voltage applied on metal contacts 242-245, magnetization of FM3 303 can be switched to parallel or perpendicular relative to the magnetizations of FM1 nanowire 301 and FM2 nanowire 302 via SOC, in accordance with some embodiments.
  • stimulus based on domain wall motion may be used.
  • stimulus based on domain wall motion may be used to change the magnetization direction of FM3 303 to affect propagation of spin waves through FM3 303 towards FM2 nanowire 302.
  • Fig. 4 illustrates top view 400 of a spin wave switch scheme with in-plane magnets, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 4 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such. So as not to obscure the embodiments, differences between Fig. 3A and Fig. 4 are described.
  • FM3 403 is embedded in a single Exchange Coupling Layer 404. Material wise, FM3 403 is the same as FM3 303, and Exchange Coupling Layer 404 is the same as Exchange Coupling Layers 303 and 304. In some embodiments, FM3 403 is formed on top of Exchange
  • spin wave switch scheme of Fig. 4 works the same as the spin wave switch scheme of Figs. 3A-B, but may have at least one less fabrication step, according to some embodiments.
  • Fig. 6 illustrates side view 600 of a spin wave switch scheme with out-of- plane magnets and controllable by a magnetic junction, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 6 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • FM1 nanowire 601 (first FM), FM2 nanowire 602
  • magnets with perpendicular magnetic anisotropy are formed with multiple layers in a stack.
  • the multiple thin layers can be layers of Cobalt and Platinum (i.e., Co/Pt), for example.
  • multiple thin layers include: Co and Pd; Co and Ni; MgO, CoFeB, Ta, CoFeB, and MgO; MgO, CoFeB, W, CoFeB, and MgO; MgO, CoFeB, V, CoFeB, and MgO; MgO, CoFeB, Mo, CoFeB, MgO; Mn x Ga y ;
  • the perpendicular magnetic layer is formed of a single layer of one or more materials.
  • the single layer is formed of MnGa.
  • the perpendicular magnetic layer is formed of one of: a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, YIG, or a combination of them.
  • a break is formed between FM1 nanowire 601 and FM2 nanowire 602, and an Exchange Layer 604 is formed over FM1 nanowire 601 and FM2 nanowire 602 as shown.
  • FM3 603 is formed above Exchange Layer 604.
  • FM3 603 is a free magnet.
  • FM3 603 is a quad-stable element which is formed over a quad-shaped Exchange Layer 604.
  • magnetization direction of FM3 603 is controlled or modulated relative to the magnetization directions of the FM1 nanowire 601 and FM2 nanowire 602 by a spin transfer torque (STT).
  • STT spin transfer torque
  • a magnetic junction an MTJ or spin valve
  • FM3 603 is formed using FM3 603 as the free magnetic layer.
  • a first exchange coupling occurs between FM1 nanowire 601 and FM3 603 via Exchange Coupling Layer 604.
  • a second exchange coupling occurs between FM3 603 and FM2 nanowire 602.
  • the magnetization of FM3 603 is perpendicular relative to the magnetizations of FM1 nanowire 601 and FM2 nanowire 602
  • little or no exchange coupling occurs between FM1 nanowire 601 and FM3 603, and between FM3 603 and FM2 nanowire 602.
  • Spin Wave Generator 306 generates a spin wave which propagates along FM1 nanowire 601 towards the Exchange Coupling Layer 604. This spin wave is called the incident spin wave (SW).
  • SW the incident spin wave
  • the magnetization of FM3 603 is perpendicular relative to the magnetizations of FM1 nanowire 601 and FM2 nanowire 602
  • no exchange of spin waves occurs between FM1 nanowire 601 and FM2 nanowire 602.
  • the incident spin wave is reflected back towards Spin Wave Generator 306.
  • substantially zero or none of the incident spin wave makes it to FM2 nanowire 602.
  • the amplitude of the spin waves that make it to FM2 nanowire 602 have drastically suppressed amplitudes (e.g., suppressed by lOx).
  • Spin Wave Generator 306 generates spin wave (e.g., incident spin wave) which propagates along FMl nanowire 601 towards Exchange Coupling Layer 604.
  • spin wave e.g., incident spin wave
  • exchange of spin waves occurs between FMl nanowire 601 and FM2 nanowire 602.
  • incident spin wave is propagates through FM3 603 and Exchange Coupling Layer 604 to FM2 nanowire 602.
  • the amplitude of the spin waves on FM2 602 may not be the same as the amplitude of the incident spin wave.
  • the amplitude of the transmitted spin waves on FM2 602 is about half the amplitude of incident spin wave.
  • the amplitude of the transmitted spin wave on FM2 nanowire 602 is high enough to be detected by Spin Wave Detector 307.
  • Spin Wave Detector 307 indicates a logic 1 state, a phase Pi state, or AC signal with amplitude above a threshold, etc. in accordance with some embodiments.
  • Fig. 7 illustrates side view 700 of a spin wave switch scheme controllable by a magnetic junction, according to some embodiments of the disclosure. It is pointed out that those elements of Fig. 7 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such. Fig. 7 is described with reference to Fig. 6.
  • spin wave switch scheme of Fig. 7 comprises a Spin
  • FMl nanowire 701 and FM2 nanowire 702 are in different layers.
  • FMl nanowire 701 and FM2 nanowire 702 are at different levels, one being above or below the other.
  • FMl nanowire 701 and FM2 nanowire 702 are formed of the same ferromagnetic materials.
  • Exchange Coupling Layer 704 is formed over part of
  • FMl nanowire 701 as shown.
  • FM3 703 is sandwiched between Exchange Coupling Layers 704 and 705.
  • FM2 nanowire 702 is formed over part of Exchange Coupling Layer 705.
  • magnetization direction of FM3 703 is controlled or modulated relative to the magnetization directions of FMl nanowire 701 and FM2 nanowire 702 by STT, domain wall motion, spin Hall effect, Spin current reversal, etc.
  • a first exchange coupling occurs between FMl nanowire 701 and FM3 703 via Exchange Coupling Layer 704.
  • second exchange coupling occurs between FM3 703 and FM2 nanowire 702.
  • Spin Wave Generator 306 generates a spin wave which propagates along FMl nanowire 701 towards the Exchange Coupling Layer 704. This spin wave is the incident spin wave.
  • This spin wave is the incident spin wave.
  • the magnetization of FM3 703 is perpendicular relative to the magnetizations of FMl nanowire 701 and FM2 nanowire 702
  • no exchange of spin waves occurs between FMl 701 and FM2 nanowire 702.
  • the incident spin wave is reflected back towards Spin Wave Generator 306.
  • substantially zero or none of the incident spin wave makes it to FM2 nanowire 702.
  • the amplitude of the spin waves that make it to FM2 nanowire 702 have drastically suppressed amplitudes (e.g., suppressed by lOx).
  • the amplitude of the spin waves on FM2 nanowire 702 may not be the same as the amplitude of the incident spin wave.
  • the amplitude of the transmitted spin waves on FM2 nanowire 702 is about half the amplitude of the incident spin wave.
  • the amplitude of transmitted spin wave on FM2 nanowire 702 is high enough to be detected by Spin Wave Detector 307.
  • Spin Wave Detector 307 indicates a logic 1 state, a phase Pi state, or AC signal with amplitude above a threshold, etc., in accordance with some embodiments.
  • Figs. 8-11 illustrate micro-magnetic simulation results for the spin wave switch scheme of Fig. 3B showing spin wave propagation (in the x, y, and -z directions, respectively) at various states. It is pointed out that those elements of Figs. 8-11 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • spin waves are generated by a magnetic field oscillation with frequency of 20.5 GHz acting on the leftmost 40nm of the FM nanowire (FM1 301) and propagate left to right (towards FM2 nanowire 302).
  • the width of nanowires FM1 301 and FM2 302 is 40nm with thickness 5nm
  • the length of FM1 nanowire 301 and FM2 nanowire 302 is 60nm
  • coupling length to the magnet is 20nm on each side
  • material properties of FM1 nanowire 301 , FM2 nanowire 302, and FM3 303 correspond to permalloy (e.g., 80% Ni, 20% Fe)
  • exchange coupling strength of Exchange Coupling Layers 304 and 305 is 3mJ/m 2 .
  • coupling length generally refers to the length of the interface between FM nanowire and exchange layer.
  • coupling length is the length of the interface between FM 601 and exchange layer 604, and between exchange layer 604 and FM2 602 nanowire.
  • Arrows in plots 800, 830, 900, 930, 1000, 1030, 1100, and 1130 designate the in-plane dominant direction of magnetization.
  • the transverse (e.g., y and z) projections are designated by a gray-scale map. The darker shades correspond to plus values and minus values. Deep dark shade corresponds to 10,000 A/m, while white or no shade corresponds to values close to zero.
  • Fig. 8 illustrates micro-magnetic simulation results as plots 800 and 830 for the spin wave switch scheme of Fig. 3B showing spin wave propagation (in the x, y, and -z directions, respectively) at an initial state with the nanomagnets and FM wire having parallel magnetizations, according to one embodiment of the disclosure.
  • Plots 800 and 830 show the initial state of magnetization with FM3 303 (or nanomagnet) and FM1 nanowire 301 and FM2 nanowire 302 (i.e., FM wires) having parallel magnetizations.
  • Plot 800 shows propagation of spin waves in the x-direction with projections towards the y-direction near the edges as shown by the gray-scale shades.
  • FIG. 9 illustrates micro-magnetic simulation results as plots 900 and 930 for the spin wave switch scheme of Fig. 3B showing magnetization (in the x, y, and -z directions, respectively) at a final state with the nanomagnets and FM wire having parallel magnetizations, according to one embodiment of the disclosure.
  • Plots 900 and 930 show the final state (e.g., after 0.5ns) of the magnetization with FM3 303 (or nanomagnet) and FMl nanowire 301 and FM2 nanowire 302 having parallel magnetizations.
  • Plot 900 shows propagation of spin waves in the x-direction with projections towards the y-direction near the edges as shown by the gray-scale shades.
  • Plot 930 shows the final state of magnetization in the -z direction.
  • Plots 900 and 930 show propagation of spin waves (as discussed with reference to Fig. 5B) from FMl nanowire 301 to FM2 nanowire 302.
  • Fig. 10 illustrates micro-magnetic simulation results as plots 1000 and 1030 for the spin wave switch scheme of Fig. 3B showing magnetization (in the x, y, and -z directions, respectively) at an initial state with the nanomagnets having perpendicular magnetizations relative to the FM wires, according to one embodiment of the disclosure.
  • Plots 1000 and 1030 show the initial state of magnetization of FM3 303 (or nanomagnet) relative to FMl nanowire 301 and FM2 nanowire 202, where FM3 303 has perpendicular magnetization compared to FMl nanowire 301 and FM2 nanowire 302.
  • Plot 1000 shows propagation of spin waves in the x-direction with projections towards the y-direction near the edges as shown by the gray-scale shades.
  • Plot 1030 shows the initial state of magnetization in the -z direction. Because magnetization of FM3 303 is perpendicular relative to magnetizations of FMl nanowire 301 and FM2 nanowire 302, the edges of the magnets and the exchange coupling layers have dark gray shades.
  • Fig. 11 illustrates micro-magnetic simulation results as plots 1100 and 1130 for the spin wave switch scheme of Fig. 3B showing magnetization (in the x, y, and -z directions, respectively) at a final state with the nanomagnets having perpendicular magnetizations relative to the FM wires, according to one embodiment of the disclosure.
  • Plots 1100 and 1130 show the final state (e.g., after 0.5ns) of magnetization with FM3 303 (or nanomagnet) having perpendicular magnetization relative to
  • Plot 1000 shows the propagation of spin waves in the x-direction with projections towards the y-direction near the edges as shown by the gray-scale shades.
  • Plot 1130 shows the final state of magnetization in the -z direction.
  • Plots 1100 and 1130 show propagation of spin waves being halted (as discussed with reference to Fig. 5A) from FMl nanowire 301 to FM2 nanowire 302 due to FM3 303.
  • Fig. 12 illustrates flowchart 1200 of a method of using the spin wave switch scheme, according to some embodiments. It is pointed out that those elements of Fig. 12 having the same reference numbers (or names) as the elements of any other figure can operate or function in any manner similar to that described, but are not limited to such.
  • Spin Wave Generator 306 generates an incident spin wave using any of the schemes described with reference to the various embodiments.
  • the incident spin wave traverses along FMl nanowire 301 towards the exchange coupling layer (e.g., first Exchange Coupling layer 304, Exchange Coupling layer 404, Exchange Coupling layer 604, or Exchange Coupling layer 704).
  • the incident spin wave is exchanged coupled to FM2 nanowire 302 depending on the magnetization direction of FM3 303.
  • magnetizations of FMl nanowire 301, FM2 nanowire 302, and FM3 303 are the same), then exchange coupling results in the incident wave propagating from FMl nanowire 301 to FM2 nanowire 302 via FM3 303.
  • the magnetization of FM3 303 is perpendicular with reference to the magnetization directions of FMl nanowire 301 and FM2 nanowire 302, then exchange coupling is very weak and the incident wave is reflected back and may not propagate from FMl nanowire 301 to FM2 nanowire 302 via FM3 303.
  • Coupling Layer is modulated by an external stimulus (e.g., STT, Spin current reversal, domain wall motion, spin Hall effect, etc.).
  • an external stimulus e.g., STT, Spin current reversal, domain wall motion, spin Hall effect, etc.
  • the impedance of the stack is low (which allows spin wave propagation through the stack).
  • the impedance of the stack is high (which substantially halts spin wave propagation through the stack).
  • the process either proceeds to block 1204 or 1205.
  • Spin Wave Detector 307 detects spin wave on FM2 nanowire 302 as logic one when the magnetization of FM3 303 is the same as the magnetization of FM1 301 and FM2 302.
  • Spin Wave Detector 307 detects no spin wave (or spin wave with very small amplitude, e.g., 10 times smaller than the amplitude of the incident spin wave) on FM2 nanowire 302 as logic zero when the magnetization of FM3 303 is the opposite as the magnetization of FM1 nanowire 301 and FM2 nanowire 302.
  • Fig. 13 illustrates a smart device or a computer system or a SoC (System-on-
  • Fig. 13 illustrates a block diagram of an embodiment of a mobile device in which flat surface interface connectors could be used.
  • computing device 1600 represents a mobile computing device, such as a computing tablet, a mobile phone or smart-phone, a wireless-enabled e-reader, or other wireless mobile device. It will be understood that certain components are shown generally, and not all components of such a device are shown in computing device 1600.
  • computing device 1600 includes first processor 1610 with a spin wave switch, according to some embodiments discussed.
  • Other blocks of the computing device 1600 may also include a spin wave switch, according to some embodiments discussed.
  • the various embodiments of the present disclosure may also comprise a network interface within 1670 such as a wireless interface so that a system embodiment may be incorporated into a wireless device, for example, cell phone or personal digital assistant.
  • processor 1610 can include one or more physical devices, such as microprocessors, application processors,
  • microcontrollers programmable logic devices, or other processing means.
  • the processing operations performed by processor 1610 include the execution of an operating platform or operating system on which applications and/or device functions are executed.
  • the processing operations include operations related to I/O (input/output) with a human user or with other devices, operations related to power management, and/or operations related to connecting the computing device 1600 to another device.
  • the processing operations may also include operations related to audio I/O and/or display I/O.
  • computing device 1600 includes audio subsystem
  • Audio functions can include speaker and/or headphone output, as well as microphone input. Devices for such functions can be integrated into computing device 1600, or connected to the computing device 1600. In one embodiment, a user interacts with the computing device 1600 by providing audio commands that are received and processed by processor 1610.
  • computing device 1600 comprises display subsystem
  • Display subsystem 1630 represents hardware (e.g., display devices) and software (e.g., drivers) components that provide a visual and/or tactile display for a user to interact with the computing device 1600.
  • Display subsystem 1630 includes display interface 1632, which includes the particular screen or hardware device used to provide a display to a user.
  • display interface 1632 includes logic separate from processor 1610 to perform at least some processing related to the display.
  • display subsystem 1630 includes a touch screen (or touch pad) device that provides both output and input to a user.
  • computing device 1600 comprises I/O controller 1640.
  • I/O controller 1640 represents hardware devices and software components related to interaction with a user. I/O controller 1640 is operable to manage hardware that is part of audio subsystem 1620 and/or display subsystem 1630. Additionally, I/O controller 1640 illustrates a connection point for additional devices that connect to computing device 1600 through which a user might interact with the system. For example, devices that can be attached to the computing device 1600 might include microphone devices, speaker or stereo systems, video systems or other display devices, keyboard or keypad devices, or other I/O devices for use with specific applications such as card readers or other devices.
  • I/O controller 1640 can interact with audio subsystem
  • display subsystem 1630 For example, input through a microphone or other audio device can provide input or commands for one or more applications or functions of the computing device 1600. Additionally, audio output can be provided instead of, or in addition to display output. In another example, if display subsystem 1630 includes a touch screen, the display device also acts as an input device, which can be at least partially managed by I/O controller 1640. There can also be additional buttons or switches on the computing device 1600 to provide I/O functions managed by I/O controller 1640.
  • I/O controller 1640 manages devices such as accelerometers, cameras, light sensors or other environmental sensors, or other hardware that can be included in the computing device 1600.
  • the input can be part of direct user interaction, as well as providing environmental input to the system to influence its operations (such as filtering for noise, adjusting displays for brightness detection, applying a flash for a camera, or other features).
  • computing device 1600 includes power management
  • Memory subsystem 1660 includes memory devices for storing information in computing device 1600.
  • Memory can include nonvolatile (state does not change if power to the memory device is interrupted) and/or volatile (state is indeterminate if power to the memory device is interrupted) memory devices.
  • Memory subsystem 1660 can store application data, user data, music, photos, documents, or other data, as well as system data (whether long-term or temporary) related to the execution of the applications and functions of the computing device 1600.
  • Elements of embodiments are also provided as a machine-readable medium (e.g., memory 1660) for storing the computer-executable instructions (e.g., instructions to implement any other processes discussed herein).
  • the machine-readable medium e.g., memory 1660
  • embodiments of the disclosure may be downloaded as a computer program (e.g., BIOS) which may be transferred from a remote computer (e.g., a server) to a requesting computer (e.g., a client) by way of data signals via a communication link (e.g., a modem or network connection).
  • BIOS a computer program
  • a remote computer e.g., a server
  • a requesting computer e.g., a client
  • a communication link e.g., a modem or network connection
  • computing device 1600 comprises connectivity 1670.
  • Connectivity 1670 includes hardware devices (e.g., wireless and/or wired connectors and communication hardware) and software components (e.g., drivers, protocol stacks) to enable the computing device 1600 to communicate with external devices.
  • the computing device 1600 could be separate devices, such as other computing devices, wireless access points or base stations, as well as peripherals such as headsets, printers, or other devices.
  • Connectivity 1670 can include multiple different types of connectivity. To generalize, the computing device 1600 is illustrated with cellular connectivity 1672 and wireless connectivity 1674.
  • Cellular connectivity 1672 refers generally to cellular network connectivity provided by wireless carriers, such as provided via GSM (global system for mobile communications) or variations or derivatives, CDMA (code division multiple access) or variations or derivatives, TDM (time division multiplexing) or variations or derivatives, or other cellular service standards.
  • Wireless connectivity (or wireless interface) 1674 refers to wireless connectivity that is not cellular, and can include personal area networks (such as Bluetooth, Near Field, etc.), local area networks (such as Wi-Fi), and/or wide area networks (such as WiMax), or other wireless communication.
  • Connectivity 1670 includes parallel sensing arrays as described with reference to Figs. 10-13.
  • computing device 1600 comprises peripheral connections 1680.
  • Peripheral connections 1680 include hardware interfaces and connectors, as well as software components (e.g., drivers, protocol stacks) to make peripheral connections.
  • the computing device 1600 could both be a peripheral device ("to" 1682) to other computing devices, as well as have peripheral devices ("from” 1684) connected to it.
  • the computing device 1600 commonly has a "docking" connector to connect to other computing devices for purposes such as managing (e.g., downloading and/or uploading, changing, synchronizing) content on computing device 1600.
  • a docking connector can allow computing device 1600 to connect to certain peripherals that allow the computing device 1600 to control content output, for example, to audiovisual or other systems.
  • the computing device 1600 can make peripheral connections 1680 via common or standards-based connectors.
  • Common types can include a Universal Serial Bus (USB) connector (which can include any of a number of different hardware interfaces), DisplayPort including MiniDisplayPort (MDP), High Definition Multimedia Interface (HDMI), Firewire, or other types.
  • USB Universal Serial Bus
  • MDP MiniDisplayPort
  • HDMI High Definition Multimedia Interface
  • Firewire or other types.
  • an apparatus which comprises: a first ferromagnet
  • the apparatus comprises a magnetic junction adjacent to the exchange coupling layer, wherein the third FM layer is to form a free magnet layer of the magnetic junction.
  • the magnetic junction is one of a spin valve or a magnetic tunneling junction (MTJ).
  • the first FM layer comprises one or a combination of materials selected from a group consisting of a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, and Yttrium Iron Garnet (YIG);
  • the second FM layer comprises one or a combination of materials selected from a group consisting of a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, and Yttrium Iron Garnet (YIG);
  • the third FM layer comprises one or a combination of materials selected from a group consisting of a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, and Yttrium Iron Garnet (YIG).
  • the Heusler alloy is a material selected from a group consisting of: Cu 2 MnAl, Cu 2 MnIn,
  • the exchange coupling layer is formed of a material selected from a group consisting of: Ru, Cu, and Mo.
  • the third FM layer has a thickness in the range of lnm to 2nm.
  • the apparatus comprises a spin wave generator coupled to the first FM layer.
  • the spin wave generator comprises at least one of: an antenna, a tunneling magnetoresistance (TMR) device, or a magnetoelectric device.
  • the apparatus comprises a spin wave detector adjacent to the second FM layer.
  • the spin wave generator comprises at least one of: an antenna, a tunneling magnetoresistance (TMR) device, or a magnetoelectric device.
  • the apparatus comprises a spin wave impedance modulator which is operable to modulate an impedance of a stack which includes the third FM layer.
  • a system which comprises: a memory; a processor coupled to the memory, the processor having a spin wave switch which comprises an apparatus according to the apparatus described above; and a wireless interface for allowing the processor to communicate with another device.
  • an apparatus which comprises: a first ferromagnet (FM) layer; a second FM layer; a first exchange coupling layer adjacent to the first FM layer; a third FM layer adjacent to first exchange coupling layer; and a second exchange coupling layer adjacent to the third FM layer and to the second FM layer.
  • FM ferromagnet
  • the first FM layer comprises one or a combination of materials selected from a group consisting of a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, and Yttrium Iron Garnet (YIG);
  • the second FM layer comprises one or a combination of materials selected from a group consisting of a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, and Yttrium Iron Garnet (YIG);
  • the third FM layer comprises one or a combination of materials selected from a group consisting of a Heusler alloy, Co, Fe, Ni, Gd, B, Ge, Ga, permalloy, and Yttrium Iron Garnet (YIG).
  • the Heusler alloy is formed of a material selected from a group consisting of: Cu 2 MnAl, Cu 2 MnIn, Cu 2 MnSn, Ni 2 MnAl, Ni 2 MnIn, Ni 2 MnSn, Ni 2 MnSb, Ni 2 MnGa Co 2 MnAl, Co 2 MnSi, Co 2 MnGa, Co 2 MnGe, Pd 2 MnAl, Pd 2 MnIn, Pd 2 MnSn, Pd 2 MnSb, Co 2 FeSi, Co 2 FeAl, Fe 2 VAl, Mn 2 VGa, Co 2 FeGe, MnGa, and MnGaRu.
  • the first and second exchange coupling layers are formed of a material selected from a group consisting of: Ru, Cu, and Mo.
  • the apparatus comprises a spin wave impedance modulator which is operable to modulate an impedance of a stack which includes the third FM layer.
  • the apparatus comprises a magnetic junction, wherein the third FM layer forms a free magnet layer of the magnetic junction.
  • the magnetic junction is one of a spin valve or a magnetic tunneling junction (MTJ).
  • a system which comprises: a memory; a processor coupled to the memory, the processor having a spin wave switch which comprises an apparatus according to the apparatus described above; and a wireless interface for allowing the processor to communicate with another device.
  • a method which comprises: generating a spin wave, wherein the spin wave is to propagate through a first ferromagnet (FM); and exchange coupling the spin wave to a second FM according to the magnetization direction of a third FM, wherein the third FM is adjacent to a layer providing the exchange coupling.
  • the method comprises: detecting a spin wave on the second FM as logic one when the magnetization of the third FM is same as the magnetization of the first or second FM.
  • the method comprises detecting a spin wave on the second FM as logic zero when the magnetization of the third FM is opposite as the magnetization of the first or second FM.
  • the method comprises modulating an impedance of a stack which includes the third FM layer.
  • an apparatus which comprises: means for generating a spin wave, wherein the spin wave is to propagate through a first ferromagnet (FM); and means for exchange coupling the spin wave to a second FM according to the magnetization direction of a third FM, wherein the third FM is adjacent to a layer providing the exchange coupling.
  • the apparatus comprises means for detecting a spin wave on the second FM as logic one when the magnetization of the third FM is same as the magnetization of the first or second FM.
  • the apparatus comprises: means for detecting a spin wave on the second FM as logic zero when the magnetization of the third FM is opposite as the magnetization of the first or second FM.
  • the apparatus comprises means for modulating an impedance of a stack which includes the third FM layer.
  • a system which comprises: a memory; a processor coupled to the memory, the processor having a spin wave switch which comprises an apparatus according to the apparatus described above; and a wireless interface for allowing the processor to communicate with another device.

Abstract

La présente invention concerne un appareil qui comprend : une première couche ferromagnétique (FM) ; une deuxième couche FM ; une couche de couplage d'échange adjacente aux première et deuxième couches FM ; et une troisième couche FM adjacente à la couche de couplage d'échange. La présente invention concerne également un autre appareil qui comprend : une première couche FM ; une deuxième couche FM ; une première couche de couplage d'échange adjacente à la première couche FM ; une troisième couche FM adjacente à la première couche de couplage d'échange ; et une seconde couche de couplage d'échange adjacente à la troisième couche FM et à la deuxième couche FM.
PCT/US2015/067043 2015-12-21 2015-12-21 Appareil et procédé de commutation d'onde de spin WO2017111895A1 (fr)

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CN107675063B (zh) * 2017-09-26 2019-05-10 东北大学 一种Ni-Mn-In-Co-Cu磁制冷合金材料及制备方法
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