WO2017196109A1

WO2017196109A1 - Semiconductor device carrier, manufacturing method therefor, and device handler including same

Info

Publication number: WO2017196109A1
Application number: PCT/KR2017/004898
Authority: WO
Inventors: 유홍준
Original assignee: (주)제이티
Priority date: 2016-05-11
Filing date: 2017-05-11
Publication date: 2017-11-16
Also published as: TW201803041A; TWI618204B; KR20170127324A

Abstract

The present invention relates to an EMI shield process and, more specifically, to an EMI shield process for forming EMI shield layers on an upper surface and a lateral surface of a semiconductor device having a plurality of protruding terminals formed on a lower surface thereof. Disclosed is a semiconductor device carrier to which a plurality of semiconductor devices is attached in order to perform an EMI shield layer (13) formation process for forming EMI shield layers (13) on an upper surface and a lateral surface of a semiconductor device having a plurality of protruding terminals (12) formed on a lower surface thereof, the carrier comprising: a plate-shaped base member (100) having a preset rigidity and having a plurality of first through-holes (101) formed in a size corresponding to terminal areas in which the protruding terminals (12) of the respective semiconductor devices are formed; and an attachment layer (200) formed on an upper surface of the base member (100) such that the terminal areas are exposed to the lower side of the first through-holes (101) and edges of the terminal areas can be attached to the base member (100).

Description

Semiconductor device carrier, manufacturing method thereof and device handler comprising same

The present invention relates to an EMI shielding process, and more particularly, to an EMI shielding process of forming an EMI shielding layer on the top and side surfaces of a semiconductor device having a plurality of projecting terminals formed on a bottom thereof.

In recent years, mobile phones and smartphones are increasing in number of wireless systems installed in devices in order to cope with internationalization and improve their functions.

On the other hand, the clock frequency and data transmission speed of embedded circuits are increased, and electromagnetic noise (hereinafter, abbreviated as noise) used in a wireless system is likely to occur. This noise interferes with the wireless system, resulting in poor reception. This phenomenon is called "self-adding".

Because of the circuitry to block noise, the device becomes thicker and smaller, and it becomes a barrier to thin film, so it is necessary to develop EMI shielding technology to solve this problem.

In general, semiconductor chip EMI shielding is achieved by adding an ultra thin metal coating process on the packaging surface.

On the other hand, the semiconductor chip, according to a surface mounter technology (SMT) method, that is, a method mounted on a printed circuit board (PCB), a flat flat package (QFP), a land grid array (LGA), a ball grid array (BGA) and the like. SOP (Small out-line package) and the like.

Among these, a BGA chip in which a ball-shaped electrode is formed at a lower portion thereof has a lot of gaps in a lower portion thereof, and thus a gap is formed in a lower empty space, thereby making it difficult to completely shield EMI.

An object of the present invention, in order to solve the above problems, in forming the EMI shield, the through hole is formed in a size corresponding to the terminal area formed on the bottom surface of the semiconductor device to form a shield layer in the terminal or the like during the EMI shielding process It is to provide a semiconductor device carrier that can be prevented.

Another object of the present invention is to provide a base member having rigidity in order to prevent stiffness deterioration due to formation of a through hole of a corresponding size in a terminal area formed on a bottom surface of a semiconductor element in loading a plurality of semiconductor elements to form an EMI shield. And an adhesion layer to which the bottom of the semiconductor device is attached, thereby providing a semiconductor device carrier on which semi-element devices can be stably loaded.

Still another object of the present invention is to provide an element handler for loading elements from a tray on which a plurality of elements are loaded to an EMI shield tray to form an EMI shield.

The present invention was created in order to achieve the object of the present invention as described above , the present invention is an EMI shield for forming an EMI shield layer 13 on the top and side surfaces of a semiconductor device formed with a plurality of protruding terminals 12 on the bottom surface In the semiconductor device carrier to which the plurality of semiconductor devices are attached to perform the process of forming the layer 13, the plurality of semiconductor devices having a predetermined rigidity and a size corresponding to the terminal area in which the protruding terminals 12 of each semiconductor device are formed are formed. A plate-shaped base member 100 in which one through holes 101 are formed; Attaching layer 200 formed on the upper surface of the base member 100 so that the terminal area is exposed to the lower side of the first through hole 101 and the edge of the terminal area can be attached to the base member 100 Disclosed is a semiconductor device carrier comprising a.

The semiconductor device carrier may further include a frame 300 coupled to an upper surface of the base member 100 so that the region where the first through holes 101 are formed in the base member 100 is exposed upward. have.

The base member 100 may have a disk-shaped wafer shape, or various shapes such as a rectangle and an octagon.

The adhesion layer 200 may be formed by a double-sided tape attached to an upper surface of the base member 100.

The double-sided tape is attached to the base member 100, the second through-hole 201 is formed in the same position as the first through-hole 101 or less than the first through-hole 101 at the same position as the first through-hole 101. Can be.

The adhesion layer 200, the film formed on the upper surface of the base member 100; It may include an adhesive material bonded to the upper surface of the film.

The attachment layer 200 is attached to the base member 100, the second through-hole 201 in the same position or smaller than the first through-hole 101 at the same position as the first through-hole (101) ) May be formed.

In addition, the present invention, a plurality of the semiconductor device to perform the process of forming the EMI shield layer 13 to form the EMI shield layer 13 on the upper and side surfaces of the semiconductor device having a plurality of projecting terminals 12 formed on the bottom surface A method of manufacturing a semiconductor device carrier to be attached, the plate-shaped base member 100 having a predetermined rigidity and having a plurality of first through holes 101 formed in a size corresponding to a terminal area in which a protruding terminal 12 of each semiconductor device is formed. A base member providing step of providing; The attachment layer 200 is formed on the upper surface of the base member 100 so that the terminal area is exposed to the lower side of the first through hole 101 and the edge of the terminal area is attached to the base member 100. Forming an adhesion layer; After the attachment layer 200 is attached to the upper surface of the plate-shaped base member 100, the second through hole with the same or smaller size as the first through hole 101 at the same position as the first through hole 101. Disclosed is a method for manufacturing a semiconductor device carrier comprising the step of forming a second through hole forming a 201.

The adhesion layer 200 is a double-sided tape attached to the upper surface of the base member 100, the second through-hole forming step, the laser drilling to drill the same position as the first through-hole 101 using a laser It may include a step.

The adhesion layer 200, the film formed on the upper surface of the base member 100; It includes an adhesive material bonded to the upper surface of the film, the second through-hole forming step, may include a laser drilling step of drilling the same position as the first through-hole 101 using a laser.

In addition, in order to perform the EMI shield layer 13 forming process of forming the EMI shield layer 13 on the top and side surfaces of the semiconductor device having a plurality of protruding terminals 12 formed on the bottom thereof, An element handler for loading a semiconductor device carrier according to claim 1 from a stacked tray 20, comprising: a loading unit in which trays 20 on which a plurality of semiconductor elements are loaded are loaded; At least one carrier table 700 positioned on at least one side of the loading unit based on a transfer direction of the tray 20 and horizontally moving the carrier for loading of semiconductor devices; The semiconductor device is picked up from the tray 20 in the loading unit to expose the terminal area to the lower side of the first through hole 101 on a carrier loaded in each carrier table 700, and the edge of the terminal area is exposed. Disclosed is a device handler comprising at least one transfer tool attached to the semiconductor device carrier.

The carrier table 700 may be installed in pairs on both sides of the loading unit based on the transport direction of the tray 20.

The transfer tool 400 may be installed in pairs corresponding to each of the pair of carrier tables 700.

The device handler further includes an image acquisition unit 30 installed on the transfer path of the semiconductor device by the transfer tool 400 and photographing the bottom surface of the semiconductor device picked up by the transfer tool 400, wherein the image Analyzing the image of the bottom surface obtained by the acquisition unit 30 by the movement of at least one of the XY movement and the horizontal rotation movement so that the semiconductor device is positioned in a predetermined loading position on the semiconductor device carrier by the carrier table 700 ) Can be moved.

In the semiconductor device carrier according to the present invention, through holes are formed in a size corresponding to the terminal area formed on the bottom surface of the semiconductor device to prevent the shield layer from being formed during the EMI shielding process. There is this.

In addition, the semiconductor device carrier according to the present invention, the base having a rigidity in order to prevent the degradation of the rigidity caused by the formation of the through-holes of the corresponding size of the terminal region formed on the bottom surface of the semiconductor device in the plurality of stacks to form the EMI shield Since the bottom surface of the member and the semiconductor device is composed of an adhesion layer, there is an advantage in that the semi-elements can be loaded and transported stably.

Specifically, the device handler according to the present invention is made of an adhesion layer to which the semiconductor device is attached and a base member made of a material having a rigidity greater than that of the adhesion layer, for example, a metal material, a synthetic resin material, etc. There is an advantage in being easy to handle.

In addition, the device handler according to the present invention, in loading a semiconductor device in the EMI shield semiconductor device carrier having the above configuration from a tray on which a plurality of semiconductor devices are loaded, the carrier table on both sides of the carrier table based on the transfer direction of the tray By installing a pair and installing a pair of transfer tools corresponding to each of the pair of carrier tables, it is possible to greatly improve the transfer efficiency of semiconductor elements that pick up the semiconductor elements from the tray and attach them to the carriers loaded on the carrier table. have.

1 is a plan view showing a semiconductor device carrier according to the present invention.

FIG. 2 is a cross-sectional view taken along the line II ′ of the semiconductor device carrier of FIG. 1.

3 is an enlarged view illustrating an enlarged portion A of FIG. 2.

4 is a perspective view illustrating a base member constituting the semiconductor device carrier of FIG. 1.

5 is a plan view showing a device handler according to the present invention.

FIG. 6 is a sectional view taken along the line II-II 'of the device handler of FIG.

FIG. 7 is a cross-sectional view illustrating a vertical cross section of the device handler of FIG. 5.

8 is a bottom view illustrating an example of a device seated on a semiconductor device carrier according to the present invention.

Hereinafter, a semiconductor device carrier and a device handler according to the present invention will be described with reference to the accompanying drawings.

First, the semiconductor device carrier according to the present invention is configured to be loaded for performing an EMI shielding process for forming an EMI shield for shielding electromagnetic waves on a surface of a semiconductor device such as a system semiconductor.

The EMI shielding process includes loading a semiconductor device into a semiconductor device carrier for EMI shielding, and forming an EMI shield layer to form an EMI shield layer on upper and side surfaces of the semiconductor devices loaded on the semiconductor device carrier. It includes.

The loading step may be performed by various methods as the step of loading the semiconductor device in the semiconductor device carrier for EMI shield.

Here, the semiconductor device carrier for device loading before the loading step is supplied to the device handler for device loading through a semiconductor device carrier manufacturing method to be described later.

The EMI shield layer forming step may be performed by various methods as a step of forming an EMI shield layer on the upper and side surfaces of the semiconductor devices loaded on the semiconductor device carrier through a deposition process such as sputtering or spraying.

After the EMI shielding layer forming step, the EMI shielding process is completed after a dry process and the like, and a process of unloading from the semiconductor device carrier may be performed for performing or shipping the subsequent process.

Meanwhile, the semiconductor device carrier for the EMI shield needs to have a semiconductor device loaded thereon except for a bottom on which terminals are formed, that is, an EMI shield layer may be formed on the top and side surfaces of the semiconductor devices.

First, a description will be given of a device handler performing a loading step of loading a semiconductor device into a semiconductor device carrier for an EMI shield.

The semiconductor device 10 is an element forming an IC chip such as a display drive IC (DDI) such as a chip on glass (COG) or a chip on film (COF), an LED element, or the like, and a wafer is a so-called semiconductor. It may correspond to a device that has completed a process and a cutting process (also a test process and a classification process).

For example, as shown in FIG. 7, the semiconductor device 10 is a ball grid array package device, in which a hemispherical solder terminal is arranged in a two-dimensional array on a rear surface of a printed circuit board (PCB). It may correspond to a semiconductor package instead of.

In this case, the semiconductor device 10 may have a plurality of hemispherical protrusion terminals 12 formed on a bottom surface thereof.

The semiconductor device 10 may be loaded on the tray 20 and transported, as shown in FIGS. 5 to 6.

In the present invention, the process of forming the EMI shield layer 13 is a process of forming the EMI shield layer 13 on the top and side surfaces of the semiconductor device 10 having the plurality of protruding terminals 12 formed on the bottom thereof.

The EMI shield layer 13 may be formed by spraying or depositing a metal material on the top and side surfaces of the semiconductor device 10.

In order to form the EMI shield layer 13 on the semiconductor device 10, the device handler is configured to load the semiconductor device 10 from the tray 20 on which the plurality of semiconductor devices 10 are loaded to the semiconductor device carrier. Various configurations are possible.

For example, the device handler may include: a loading unit in which trays 20 in which a plurality of semiconductor devices are loaded are loaded; At least one carrier table 700 positioned on at least one side of the loading unit based on a transport direction of the tray 20 and horizontally moving a carrier for loading of semiconductor devices; The semiconductor device is picked up from the tray 20 in the loading unit, and the terminal area is exposed to the lower side of the first through hole 101 on the carriers loaded on the carrier tables 700, and the edges of the terminal areas are exposed to the semiconductor device carrier. It may include one or more transfer tool 400 to attach.

The loading unit may be configured in a variety of configurations in which the trays 20 in which the plurality of semiconductor devices are loaded are loaded to the device withdrawal positions.

For example, the loading unit transfers the tray 20 loaded with the semiconductor elements 10 to be loaded from the loading position to the extraction position, and transfers the tray 20 from which the device is completed to the unloading position. It may include a tray transfer unit 600 to.

In this case, the loading unit may include a tray loading part 630 in which a tray on which the device 10 is seated in the unloading position is loaded.

In addition, the tray transfer part 600 may include a guide rail 610 which is installed to face each other around the element extraction position so that the tray 20 drawn out of the tray loading part 630 moves horizontally. .

In this case, as shown in Figure 7, the loading unit may be driven in the vertical direction to recover the tray 20, the device withdrawal is completed.

The carrier table 700 is located on at least one side of the loading unit with respect to the conveying direction of the tray 20 and is configured in various configurations to horizontally move the semiconductor device carrier to load the semiconductor devices 10 in the semiconductor device carrier. This is possible.

For example, the carrier table 700 receives the semiconductor device carrier from the carrier loading unit 900 so that the transfer device 400 can load the device 10 picked up from the tray 20. As the configuration for moving in the horizontal direction, various configurations such as an XY table and an XY-Θ table are possible.

In this case, the carrier loading unit 900 is configured to move the semiconductor device carrier to the carrier table 700 in sequence and can be configured in various ways. For example, the carrier loading unit 900 may include a carrier loading unit in which a plurality of carriers are loaded.

In addition, the carrier table 700 may be moved in the vertical direction, that is, the Z axis direction.

The carrier table 700 may include a carrier transfer unit (not shown) which transfers the semiconductor device carrier from which the device 10 is loaded from the tray 20 to the carrier unloading unit 800 by the transfer tool 400. Can be.

In this case, the semiconductor device carrier may be conveyed to the EMI shield forming apparatus (not shown) for the EMI shield layer 13 forming process after the semiconductor device 10 is loaded.

The transfer tool 400, as shown in Figure 6, may be combined with a guide 500 for linear movement of the transfer tool 400.

In this case, the transfer tool 400 may be coupled to both sides of the guide 500 or to the same side.

For example, the transfer tool 400 may include a first transfer tool 410 corresponding to the first semiconductor device carrier table 700 located on one side of the loading unit and a second semiconductor device carrier table 700 located on the other side of the loading unit. The second transfer tool 420 corresponding to and may be installed in pairs.

As illustrated in FIG. 6, the first transfer tool 410 transfers the semiconductor device 10 to the first semiconductor device carrier along the first path), and the second transfer tool 420 may be formed of the first transfer tool 420. Various configurations are possible by transferring the semiconductor device 10 to the second semiconductor device carrier along the two paths ().

For example, the first transfer tool 410 and the second transfer tool 420 may be configured to alternately transfer the elements so as not to interfere with each other when the semiconductor element 10 is drawn out from the withdrawal position.

On the other hand, the transfer tool 400 is a configuration for transferring the element 10 from the tray 20 to the semiconductor element carrier, and can be configured in various ways according to the pick-up method. It may be configured to include an adsorption head (not shown) for generating the adsorption to pick up the element 10.

Meanwhile, the device handler further includes an image acquisition unit 30 installed on the transfer path of the semiconductor device by the transfer tool 400 and photographing the bottom surface of the semiconductor device 10 picked up by the transfer tool 400. can do.

Here, the image obtained by the image acquisition unit 30 may perform a vision inspection on the bottom surface of the semiconductor device 10 adsorbed on the adsorption pad of the transfer tool 400.

In addition, the image obtained by the image acquisition unit 30, the semiconductor device (suitable for a suitable mounting position on the semiconductor device carrier on the carrier table 700, that is, the first through hole 101 and the second through hole 201) It can be utilized to check the horizontal state of the semiconductor device 10 picked up by the transfer tool 400 so that 10) can be loaded.

The device handler analyzes an image of the bottom surface obtained by the image acquisition unit 30 to move the semiconductor device to at least one of an XY movement and a horizontal rotational movement so that the semiconductor device is positioned at a preset loading position on the semiconductor device carrier. The carrier table 700 may be moved.

Here, of course, the transfer tool 400 picking up the semiconductor element 10 is rotated so as to be suitable for the proper seating position on the semiconductor element carrier on the carrier table 700, that is, the first through hole 101 and the second through hole 201. Of course, the semiconductor device 10 can be loaded.

The semiconductor device carrier on which the semiconductor device 10 is loaded by the device handler may move to the carrier unloading unit 900 and be transferred to an EMI shield forming apparatus (not shown) for the EMI shield layer 13 forming process. have.

Meanwhile, the device handler having the above configuration may be configured as part of an inline system that is inlined from the above-described device loading to the unloading after EMI shielding.

Meanwhile, in the conventional semiconductor device carrier, the bottom surface of the semiconductor device 10 is not closely adhered to the semiconductor device carrier due to the influence of the protruding terminal 12 formed on the bottom surface of the semiconductor device 10. There is a problem that the formation of the EMI shield layer 13 is not completely made.

In addition, the conventional semiconductor device carrier has a problem in that the shape of the support surface is not stably maintained during the carrier transfer process by attaching the semiconductor device 10 to a support surface formed of a thin and flexible material such as a tape.

In order to solve the above problems, the semiconductor device carrier according to the present invention, EMI shield layer 13 to form an EMI shield layer 13 on the upper surface and the side of the semiconductor device formed with a plurality of protruding terminals 12 on the bottom surface A semiconductor device carrier to which a plurality of semiconductor devices are attached to perform a forming process. The semiconductor device carrier has a predetermined rigidity and has a size corresponding to a terminal area in which the protruding terminal 12 of each semiconductor device is formed. Plate-shaped base member 100 is formed; An attachment layer 200 formed on an upper surface of the base member 100 so that the terminal region is exposed to the lower side of the first through hole 101 and the edge of the terminal region is attached to the base member 100; The frame 300 is coupled to the upper surface of the base member 100 so that the region where the first through holes 101 are formed in the base member 100 is exposed to the upper portion.

The base member 100 is a plate-shaped member having a predetermined rigidity, and a plurality of first through holes 101 are formed to have a size corresponding to a terminal area in which the protruding terminal 12 of each semiconductor device 10 is formed. Can be.

As shown in FIGS. 1 to 3, the first through hole 101 may have a size smaller than that of the semiconductor device 10 and larger than a terminal region in which the protruding terminal 12 is formed.

The first through hole 101 may have various shapes in such a manner as to support an edge at which the protruding terminal 12 of the bottom surface of the semiconductor device 10 is not formed.

For example, the first through hole 101 may have a shape corresponding to a planar shape of the semiconductor device 10, for example, a rectangular shape, the boundary of which the protruding terminal 12 of the bottom surface of the semiconductor device 10 may be formed. It may be formed to be located between the terminal area and the edge.

More specifically, as illustrated in FIG. 3, the first through hole 101 is larger in size than the terminal area w in which the protruding terminal 12 is formed, and is larger than the bottom surface of the semiconductor device 10. It may be formed to be small so as to contact an edge outside the terminal region w of the semiconductor device 10.

That is, as shown in FIG. 3, the first through hole 101 is preferably located in the circumferential region d1 + d2 excluding the terminal region of the semiconductor device 10.

The base member 100, the base member 100 may have a variety of shapes, such as a disk-shaped wafer shape or octagonal, rectangular, but is not limited thereto.

The base member 100 may have various materials as long as it is a material capable of supporting the semiconductor device 10 loaded with predetermined rigidity without shaking.

For example, the base member 100 may have a material that is harder than the material of the metal and the adhesion layer 200 described later.

The attachment layer 200 is formed on the upper surface of the base member 100 so that the terminal region is exposed to the lower side of the first through hole 101 and the edge of the terminal region can be attached to the base member 100. Various configurations are possible.

In one embodiment, the adhesion layer 200 may be formed by an adhesive tape having an adhesive attached to the upper surface of the base member 100, for example, the adhesive tape may correspond to a double-sided tape. have.

In this case, the double-sided tape is attached to the base member 100, the second through-hole 201 is formed in the same position as the first through-hole 101 or smaller in size with the first through-hole 101. Can be.

In another embodiment, the adhesion layer 200, the film formed on the upper surface of the base member 100; It may include an adhesive material bonded to the upper surface of the film.

At this time, the attachment layer 200 is attached to the base member 100, the second through-hole 201 in the same position or smaller than the first through-hole 101 at the same position as the first through-hole (101). Can be formed.

The frame 300 is configured to be coupled to the upper surface of the base member 100 so that the region in which the first through holes 101 are formed in the base member 100 is exposed to the top.

For example, the frame 300 may be configured as a coupling ring coupled to an edge of the adhesive layer 200 so that the region where the first through holes 101 are formed is exposed upward.

The frame 300 may have various shapes such as a circle and a rectangle.

On the other hand, the frame 300 is not an essential configuration, it corresponds to a configuration that can be selectively adopted.

In the semiconductor device carrier according to the present invention having the above-described configuration, an EMI shield layer 13 forming process of forming an EMI shield layer 13 on the top and side surfaces of a semiconductor device having a plurality of protruding terminals 12 formed on a bottom surface thereof. A method of manufacturing a semiconductor device carrier to which a plurality of semiconductor devices are attached to perform a method, comprising: a plurality of first through holes 101 having a predetermined rigidity and corresponding to a terminal area in which protrusion terminals 12 of each semiconductor device are formed; A base member providing step of providing a plate-shaped base member 100 formed thereon; Attachment layer forming step of forming the attachment layer 200 on the upper surface of the base member 100 so that the terminal area is exposed to the lower side of the first through hole 101 and the edge of the terminal area is attached to the base member 100. Wow; After the attachment layer 200 is attached to the upper surface of the plate-shaped base member 100, the second through hole 201 is formed in the same position as or less than the first through hole 101 at the same position as the first through hole 101. It can be produced by a semiconductor device carrier manufacturing method comprising a second through-hole forming step to form.

In one embodiment, the adhesion layer 200 is a double-sided tape is attached to the upper surface of the base member 100, the second through-hole forming step, drilling the same position as the first through-hole 101 using a laser It may include a laser drilling step.

In another embodiment, the adhesion layer 200, the film formed on the upper surface of the base member 100; It includes an adhesive material bonded to the upper surface of the film, the second through-hole forming step may include a laser drilling step of drilling the same position as the first through-hole 101 using a laser.

On the other hand, the semiconductor device carrier manufacturing method, the first through-hole (at the same position as the first through-hole 101 in the attachment layer 200 before the attachment layer 200 is attached to the upper surface of the plate-shaped base member 100 ( The second through-hole forming step of forming the second through-hole 201 with the same or smaller size than that of 101 is performed, and the attachment layer 200 having the second through-hole 201 is formed on the base member 100. An adhesive layer forming step of attaching the first through hole 101 and the second through hole 201 to correspond to each other may be performed.

Since the above has been described only with respect to some of the preferred embodiments that can be implemented by the present invention, the scope of the present invention, as is well known, should not be construed as limited to the above embodiments, the present invention described above It will be said that both the technical idea and the technical idea which together with the base are included in the scope of the present invention.

Claims

Semiconductor device carrier to which the plurality of semiconductor devices are attached to perform the process of forming the EMI shield layer 13 to form the EMI shield layer 13 on the top and side surfaces of the semiconductor device having the plurality of protruding terminals 12 formed on the bottom surface thereof. To

A plate-shaped base member 100 having a predetermined rigidity and having a plurality of first through holes 101 formed in a size corresponding to a terminal region in which the protruding terminals 12 of each semiconductor element are formed;

Attaching layer 200 formed on the upper surface of the base member 100 so that the terminal area is exposed to the lower side of the first through hole 101 and the edge of the terminal area can be attached to the base member 100 A semiconductor device carrier comprising a.
The method according to claim 1,

The semiconductor device carrier further comprises a frame 300 coupled to the upper surface of the base member 100 so that the region in which the first through holes 101 are formed in the base member 100 is exposed to the upper portion. .
The method according to claim 1,

The base member 100,

A semiconductor device carrier having a disk shape wafer shape or a polygonal shape.
The method according to claim 1,

The adhesion layer 200,

It is formed by a double-sided tape attached to the upper surface of the base member 100,

The double-sided tape,

The semiconductor is characterized in that the second through-hole 201 is formed in the same position or smaller than the first through-hole 101 at the same position as the first through-hole 101 after being attached to the base member 100 Device carrier.
The method according to claim 1,

The adhesion layer 200,

A film formed on an upper surface of the base member 100;

It includes an adhesive material bonded to the upper surface of the film,

The semiconductor is characterized in that the second through-hole 201 is formed in the same position or smaller than the first through-hole 101 at the same position as the first through-hole 101 after being attached to the base member 100 Device carrier.
Semiconductor device carrier to which the plurality of semiconductor devices are attached to perform the process of forming the EMI shield layer 13 to form the EMI shield layer 13 on the top and side surfaces of the semiconductor device having the plurality of protruding terminals 12 formed on the bottom surface thereof. As a manufacturing method,

A base member providing step of providing a plate-shaped base member 100 having a predetermined rigidity and having a plurality of first through holes 101 formed in a size corresponding to a terminal region in which the protruding terminals 12 of each semiconductor element are formed;

The attachment layer 200 is formed on the upper surface of the base member 100 so that the terminal area is exposed to the lower side of the first through hole 101 and the edge of the terminal area is attached to the base member 100. Forming an adhesion layer;

After the attachment layer 200 is attached to the upper surface of the plate-shaped base member 100, the second through hole with the same or smaller size as the first through hole 101 at the same position as the first through hole 101. And a second through hole forming step of forming a 201.
The method according to claim 6,

The adhesion layer 200,

Is a double-sided tape attached to the upper surface of the base member 100,

The second through-hole forming step,

And a laser drilling step of drilling the same position as the first through hole 101 using a laser.
The method according to claim 6,

The adhesion layer 200,

A film formed on an upper surface of the base member 100;

It includes an adhesive material bonded to the upper surface of the film,

The second through-hole forming step,

And a laser drilling step of drilling the same position as the first through hole 101 using a laser.
In order to perform the process of forming the EMI shield layer 13, which forms the EMI shield layer 13 on the top and side surfaces of the semiconductor device having the plurality of protruding terminals 12 formed on the bottom thereof, a tray 20 in which a plurality of semiconductor devices are stacked. A device handler mounted on a semiconductor device carrier according to claim 1 from

A loading unit in which trays 20 in which a plurality of semiconductor devices are loaded are loaded;

At least one carrier table 700 positioned on at least one side of the loading unit based on a transfer direction of the tray 20 and horizontally moving the carrier for loading of semiconductor devices;

The semiconductor device is picked up from the tray 20 in the loading unit to expose the terminal area to the lower side of the first through hole 101 on a carrier loaded in each carrier table 700, and the edge of the terminal area is exposed. And at least one transfer tool (400) attached to the semiconductor device carrier.
The method according to claim 9,

The carrier table 700,

In the loading unit is installed in pairs on both sides based on the conveying direction of the tray 20,

The transfer tool 400,

A device handler, characterized in that installed in pairs corresponding to each of the pair of carrier table (700).
The method according to claim 10,

It is installed on the transfer path of the semiconductor device by the transfer tool 400 and further comprises an image acquisition unit 30 for photographing the bottom surface of the semiconductor element picked up by the transfer tool 400,

Analyzing the image of the bottom surface obtained by the image acquisition unit 30 and the carrier table by the movement of at least one of XY movement and horizontal rotational movement so that the semiconductor device is positioned in a predetermined loading position on the semiconductor device carrier A device handler, characterized in that for moving (700).