WO2017193582A1 - 一种声表面波滤波芯片的封装结构 - Google Patents

一种声表面波滤波芯片的封装结构 Download PDF

Info

Publication number
WO2017193582A1
WO2017193582A1 PCT/CN2016/109758 CN2016109758W WO2017193582A1 WO 2017193582 A1 WO2017193582 A1 WO 2017193582A1 CN 2016109758 W CN2016109758 W CN 2016109758W WO 2017193582 A1 WO2017193582 A1 WO 2017193582A1
Authority
WO
WIPO (PCT)
Prior art keywords
chip
substrate
glue
groove
acoustic wave
Prior art date
Application number
PCT/CN2016/109758
Other languages
English (en)
French (fr)
Inventor
张超
柳燕华
赵立明
Original Assignee
江苏长电科技股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 江苏长电科技股份有限公司 filed Critical 江苏长电科技股份有限公司
Publication of WO2017193582A1 publication Critical patent/WO2017193582A1/zh

Links

Classifications

    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • HELECTRICITY
    • H03ELECTRONIC CIRCUITRY
    • H03HIMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02Details
    • H03H9/05Holders; Supports
    • H03H9/10Mounting in enclosures

Definitions

  • the present invention relates to a package structure of a surface acoustic wave filter chip, and belongs to the field of semiconductor package technology.
  • the glue 2 is sealed around the bottom of the MEMS chip 3 to form a closed acoustic cavity. Due to the existing structure, the MEMS chip is flip-chip soldered on the surface of the PCB and is not soldered in the recess. Similarly, the bottom dot sealing process is adopted, so that the sealant easily flows along the gap between the MEMS chip and the PCB. On the surface of the MEMS chip, the effective area of the MEMS chip is contaminated.
  • the technical problem to be solved by the present invention is to provide a package structure of a surface acoustic wave filter chip for the above prior art, which can effectively control the glue to not overflow into the functional area of the chip to form a stable acoustic cavity structure.
  • a package structure of a surface acoustic wave filter chip which comprises a substrate, a substrate recess and a substrate overflow tank are disposed on the front surface of the substrate, and the substrate A chip is mounted on the recessed surface, the size of the substrate recess is smaller than the chip size, and an acoustic cavity is formed between the chip and the substrate recess.
  • the substrate overflow slot is located directly below the edge of the chip edge, and the substrate overflows the glue tank.
  • a glue is disposed between the sides of the chip, and the glue on the side of the chip forms a dam, and the bottom of the chip and the bottom of the groove of the substrate are connected by a conductive pillar, and the periphery of the chip is covered with an encapsulating material.
  • the substrate overflow tank is located at the edge just below the periphery of the chip, reducing the contact between the dispensing and the functional surface of the chip, preventing the excess glue from spilling along the underside of the chip to the effective area of the chip;
  • the height of the acoustic wave surface wave filter structure can be reduced, the whole height is lowered, so the thickness of the package is thinner and the size is more Small, conducive to saving space;
  • the size of the substrate groove is set to be smaller than the chip size, so that after the chip is reflowed, the edge of the chip is placed on the surface of the substrate, and the gap between the chip and the substrate is eliminated as much as possible to prevent the glue from overflowing onto the surface of the chip.
  • FIG. 1 is a schematic view of a conventional package structure with an acoustic cavity.
  • FIG. 2 is a schematic diagram of a package structure of a surface acoustic wave filter chip according to the present invention.
  • a package structure of a surface acoustic wave filter chip in the embodiment includes a substrate 10, and a substrate recess 12 and a substrate overflow tank 13 are disposed on the front surface of the substrate 10.
  • a chip 20 is mounted on the substrate recess 12, and the size of the substrate recess 12 is smaller than the size of the chip 20.
  • the acoustic cavity 50 is formed between the chip 20 and the substrate recess 12, and the substrate overflow slot 13 is located on the chip.
  • a glue 40 is disposed between the substrate overflow tank 13 and the side of the chip 20, and the glue on the side of the chip 20 forms a dam, and the bottom of the chip 20 and the bottom of the substrate recess 12 are
  • the chip 20 is peripherally covered with an encapsulant 60 by a conductive pillar 30.
  • the chip 20 is soldered in the substrate recess 12 through a conductive post.
  • the chip naturally sinks due to gravity, and the chip edge is mounted on the substrate retaining wall.
  • the glue 40 on the four sides of the chip 20 forms a dam, and the glue is filled.
  • the substrate overflows the ink tank and the four side walls of the chip.

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)

Abstract

一种声表面波滤波芯片的封装结构,它包括基板(10),所述基板(10)正面开设有基板凹槽(12)和基板溢胶槽(13),所述基板凹槽(12)上方倒装有芯片(20),所述基板凹槽(12)的尺寸小于芯片(20)尺寸,所述芯片(20)与基板凹槽(12)之间形成声腔(50),所述基板溢胶槽(13)位于芯片(20)边缘外围正下方,所述基板溢胶槽(13)与芯片(20)侧边之间设置有胶(40),所述芯片(20)侧边的胶(40)形成围坝,所述芯片(20)底部与基板凹槽(12)底部之间通过导电柱子(30)相连接,所述芯片(20)外围包覆有包封料(60)。所述声表面波滤波芯片的封装结构,能够有效地控制胶不溢到芯片功能区域,形成稳定的声腔结构。

Description

一种声表面波滤波芯片的封装结构 技术领域
[0001] 本实用新型涉及一种声表面波滤波芯片的封装结构, 属于半导体封装技术领域 背景技术
[0002] 声表面波滤波器广泛应用于电视、 卫星通讯、 光纤通讯和移动通讯等领域, 因 声表面波滤波器产品性能和设计功能需求, 需要保证滤波芯片功能区域不能接 触任何物质, 即声腔结构设计。 现有的声腔结构设计如图 1所示, PCB板 1上设 置溢胶槽, MEMS芯片 3倒装上芯在 PCB
板 1上, 在 MEMS芯片 3底部四周点封胶 2形成密闭的声腔。 由于现有的结构中, MEMS芯片是倒装焊接在 PCB板表面并且未焊接在在凹槽内, 同吋, 采用底部点 封胶工艺, 使得密封胶容易沿着 MEMS芯片与 PCB板的间隙流到 MEMS芯片表面 , 沾污 MEMS芯片有效区域。
技术问题
[0003] 本实用新型所要解决的技术问题是针对上述现有技术提供一种声表面波滤波芯 片的封装结构, 它能够有效的控制胶不溢到芯片功能区域, 形成稳定的声腔结 构。
问题的解决方案
技术解决方案
[0004] 本实用新型解决上述问题所采用的技术方案为: 一种声表面波滤波芯片的封装 结构, 它包括基板, 所述基板正面幵设有基板凹槽和基板溢胶槽, 所述基板凹 槽上方倒装有芯片, 所述基板凹槽的尺寸小于芯片尺寸, 所述芯片与基板凹槽 之间形成声腔, 所述基板溢胶槽位于芯片边缘外围正下方, 所述基板溢胶槽与 芯片侧边之间设置有胶, 所述芯片侧边的胶形成围坝, 述芯片底部与基板凹槽 底部之间通过导电柱子相连接, 所述芯片外围包覆有包封料。
发明的有益效果 有益效果
[0005] 与现有技术相比, 本实用新型的优点在于:
[0006] 1、 采用先点胶保护芯片, 胶水在没有压力的情况下受重力影响往下流到基板 溢胶槽, 但不会钻入芯片与基板之间, 形成一个稳定的声腔结构, 最后包封, 可以有效防止包封料在注胶压力的影响下钻进芯片与基板之间, 提高产品性能
[0007] 2、 设置基板溢胶槽位于芯片外围正下方边缘, 减少点胶与芯片功能面接触, 防止点胶后多余的胶沿着芯片下面溢到芯片有效区域的可能;
[0008] 3、 采用设置有凹槽的基板, 并且将芯片焊接位置设置在基板凹槽内, 可以降 低声波表面波滤波器结构的高度, 使整个高度降低, 因此封装体厚度变薄, 尺 寸更小, 有利于节省空间;
[0009] 4、 设置基板凹槽尺寸小于芯片尺寸, 使得芯片回流后, 芯片边缘架在基板表 面, 尽可能消除芯片与基板的空隙, 防止点胶后的胶溢到芯片表面。
对附图的简要说明
附图说明
[0010] 图 1为现有带声腔的封装结构的示意图。
[0011] 图 2为本实用新型一种声表面波滤波芯片的封装结构的示意图。
[0012] 其中:
[0013] 基板 10
[0014] 基板凹槽 12
[0015] 基板溢胶槽 13
[0016] 芯片 20
[0017] 导电柱子 30
[0018] 胶 40
[0019] 声腔 50
[0020] 包封料 60。
实施该发明的最佳实施例
本发明的最佳实施方式 [0021] 以下结合附图实施例对本实用新型作进一步详细描述。
[0022] 如图 2所示, 本实施例中的一种声表面波滤波芯片的封装结构, 它包括基板 10 , 所述基板 10正面幵设有基板凹槽 12和基板溢胶槽 13, 所述基板凹槽 12上方倒 装有芯片 20, 所述基板凹槽 12的尺寸小于芯片 20尺寸, 所述芯片 20与基板凹槽 1 2之间形成声腔 50, 所述基板溢胶槽 13位于芯片 20边缘外围正下方, 所述基板溢 胶槽 13与芯片 20侧边之间设置有胶 40, 所述芯片 20侧边的胶形成围坝, 所述芯 片 20底部与基板凹槽 12底部之间通过导电柱子 30相连接, 所述芯片 20外围包覆 有包封料 60。
[0023] 所述芯片 20通过导电柱子焊接在基板凹槽 12内, 由于重力作用, 芯片自然下沉 , 芯片边缘架设在基板挡墙上; 所述芯片 20四边的胶 40形成围坝, 胶充满基板 溢胶槽和芯片四边侧壁。
[0024] 除上述实施例外, 本实用新型还包括有其他实施方式, 凡采用等同变换或者等 效替换方式形成的技术方案, 均应落入本实用新型权利要求的保护范围之内。

Claims

权利要求书
[权利要求 1] 一种声表面波滤波芯片的封装结构, 其特征在于: 它包括基板 (10
, 所述基板 (10) 正面幵设有基板凹槽 (12) 和基板溢胶槽 (13) , 所述基板凹槽 (12) 上方倒装有芯片 (20) , 所述基板凹槽 (12) 的 尺寸小于芯片 (20) 尺寸, 所述芯片 (20) 与基板凹槽 (12) 之间形 成声腔 (50) , 所述基板溢胶槽 (13) 位于芯片 (20) 边缘外围正下 方, 所述基板溢胶槽 (13) 与芯片 (20) 侧边之间设置有胶 (40) , 所述芯片 (20) 侧边的胶 (40) 形成围坝, 所述芯片 (20) 底部与基 板凹槽 (12) 底部之间通过导电柱子 (30) 相连接, 所述芯片 (20) 外围包覆有包封料 (60) 。
PCT/CN2016/109758 2016-05-10 2016-12-14 一种声表面波滤波芯片的封装结构 WO2017193582A1 (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201620417264.1 2016-05-10
CN201620417264.1U CN205647459U (zh) 2016-05-10 2016-05-10 一种声表面波滤波芯片的封装结构

Publications (1)

Publication Number Publication Date
WO2017193582A1 true WO2017193582A1 (zh) 2017-11-16

Family

ID=57057787

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/CN2016/109758 WO2017193582A1 (zh) 2016-05-10 2016-12-14 一种声表面波滤波芯片的封装结构

Country Status (2)

Country Link
CN (1) CN205647459U (zh)
WO (1) WO2017193582A1 (zh)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN205647459U (zh) * 2016-05-10 2016-10-12 江苏长电科技股份有限公司 一种声表面波滤波芯片的封装结构
CN106711319A (zh) * 2016-12-23 2017-05-24 无锡市好达电子有限公司 Csp封装的声表面波滤波器芯片隔离槽
CN111525907B (zh) * 2020-04-30 2024-05-28 甬矽电子(宁波)股份有限公司 一种声表面波滤波芯片的封装结构及封装方法
CN111555731B (zh) * 2020-05-09 2023-06-06 北京超材信息科技有限公司 一种发射用的宽带声表面波滤波器
CN112600525A (zh) * 2020-12-17 2021-04-02 青岛歌尔微电子研究院有限公司 声表面滤波器及其制作方法、以及电子设备

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58200620A (ja) * 1982-05-19 1983-11-22 Hitachi Ltd 弾性波デバイス
JP2005236476A (ja) * 2004-02-18 2005-09-02 Sanyo Electric Co Ltd 弾性表面波装置
CN203225885U (zh) * 2013-04-09 2013-10-02 歌尔声学股份有限公司 Mems麦克风
CN104735596A (zh) * 2014-12-30 2015-06-24 华天科技(西安)有限公司 一种硅麦克风封装结构及其制备方法
CN105281706A (zh) * 2015-11-06 2016-01-27 江苏长电科技股份有限公司 一种声表面波滤波器封装结构及制造方法
CN205647459U (zh) * 2016-05-10 2016-10-12 江苏长电科技股份有限公司 一种声表面波滤波芯片的封装结构

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS58200620A (ja) * 1982-05-19 1983-11-22 Hitachi Ltd 弾性波デバイス
JP2005236476A (ja) * 2004-02-18 2005-09-02 Sanyo Electric Co Ltd 弾性表面波装置
CN203225885U (zh) * 2013-04-09 2013-10-02 歌尔声学股份有限公司 Mems麦克风
CN104735596A (zh) * 2014-12-30 2015-06-24 华天科技(西安)有限公司 一种硅麦克风封装结构及其制备方法
CN105281706A (zh) * 2015-11-06 2016-01-27 江苏长电科技股份有限公司 一种声表面波滤波器封装结构及制造方法
CN205647459U (zh) * 2016-05-10 2016-10-12 江苏长电科技股份有限公司 一种声表面波滤波芯片的封装结构

Also Published As

Publication number Publication date
CN205647459U (zh) 2016-10-12

Similar Documents

Publication Publication Date Title
WO2017193582A1 (zh) 一种声表面波滤波芯片的封装结构
US20100327465A1 (en) Package process and package structure
CN102855816A (zh) 具有可挠性基板的显示装置及其制造方法
TWI595611B (zh) 封裝模組及其封裝方法
CN102709259B (zh) 非数组凸块的覆晶模封构造与方法
JP2001230347A (ja) 半導体装置及びその製造方法
CN203707134U (zh) Oled显示器件的封装结构
WO2021135880A1 (zh) 异形tws sip模组及其制作方法
TWI692287B (zh) 感測器封裝結構
CN111554617A (zh) 一种芯片封装方法
CN101136341A (zh) 防范影像传感芯片传感区污染的覆晶封装方法
CN207637777U (zh) 一种半导体封装结构、声表面波滤波器及终端设备
CN207637774U (zh) 一种新型半导体封装结构、声表面波滤波器及终端设备
CN211404480U (zh) 一种分腔陶瓷cqfp封装结构
US20050266611A1 (en) Flip chip packaging method and flip chip assembly thereof
CN205920989U (zh) 用于倒装芯片的led支架以及led
CN101826495B (zh) 窗口型半导体封装构造
CN207637845U (zh) 一种简易半导体封装结构、声表面波滤波器及终端设备
TW201624822A (zh) 濾波器封裝結構及濾波器封裝結構的製作方法
CN210628280U (zh) 一种集成芯片封装结构
JP2004286998A (ja) 液晶表示装置
CN106206341A (zh) 一种防止芯片倒装焊接后短路的方法及引线框架
CN207602545U (zh) 一种倒装芯片式滤波器封装结构
CN106026959A (zh) 一种3d打印技术用于声表面滤波芯片封装制作方法
JPH1131761A (ja) 半導体部品及びその製造方法

Legal Events

Date Code Title Description
NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16901537

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 16901537

Country of ref document: EP

Kind code of ref document: A1