WO2017185812A1 - 量子点光刻胶及其制备方法、显示基板和显示装置 - Google Patents

量子点光刻胶及其制备方法、显示基板和显示装置 Download PDF

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WO2017185812A1
WO2017185812A1 PCT/CN2017/000037 CN2017000037W WO2017185812A1 WO 2017185812 A1 WO2017185812 A1 WO 2017185812A1 CN 2017000037 W CN2017000037 W CN 2017000037W WO 2017185812 A1 WO2017185812 A1 WO 2017185812A1
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quantum dot
photoresist
light
quantum
preparing
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PCT/CN2017/000037
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English (en)
French (fr)
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齐永莲
张斌
周婷婷
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京东方科技集团股份有限公司
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Priority to US15/542,339 priority Critical patent/US10459336B2/en
Publication of WO2017185812A1 publication Critical patent/WO2017185812A1/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
    • G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/0005—Production of optical devices or components in so far as characterised by the lithographic processes or materials used therefor
    • G03F7/0007—Filters, e.g. additive colour filters; Components for display devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0047—Photosensitive materials characterised by additives for obtaining a metallic or ceramic pattern, e.g. by firing
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G03F7/032—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders
    • G03F7/033—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds with binders the binders being polymers obtained by reactions only involving carbon-to-carbon unsaturated bonds, e.g. vinyl polymers
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133302—Rigid substrates, e.g. inorganic substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/1336—Illuminating devices
    • G02F1/133617—Illumination with ultraviolet light; Luminescent elements or materials associated to the cell
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2202/00—Materials and properties
    • G02F2202/36—Micro- or nanomaterials

Definitions

  • Embodiments of the present invention relate to a quantum dot photoresist, a method of fabricating the same, a display substrate, and a display device.
  • the display substrate is an important component of the display device and has a great influence on the display effect of the display device.
  • the display substrate may be, for example, a base substrate including, for example, a color filter layer and a quantum dot layer formed on the color filter layer.
  • At least one embodiment of the present invention provides a method of fabricating a quantum dot photoresist, comprising: mixing a quantum dot, a light diffusing material, and a photoresist mother liquor, wherein the light diffusing material or the quantum dots are surface-treated.
  • the quantum dots and the light diffusing material are uniformly dispersed in the mother liquid of the photoresist by ultrasonic or stirring.
  • the light diffusing material is inorganic nanoparticles.
  • the light diffusing material comprises TiO 2 nanoparticles or SiO 2 nanoparticles.
  • the light diffusing material prepared in advance is mixed with the mother liquid of the photoresist.
  • the light diffusion material is TiO 2 nanoparticles, and the TiO 2 nanoparticles have lipophilicity after surface modification treatment.
  • a surface of the TiO 2 nanoparticle is modified by using a surfactant, and then the quantum dot, the TiO 2 nanometer is mixed. Particles and the photoresist mother liquor.
  • the surfactant is triethanolamine or a polyhydric alcohol.
  • -CH 2 CH 2 N in the triethanolamine is bonded to the surface of the TiO 2 nanoparticle through an oxygen bridge.
  • the light diffusing material is SiO 2 nanoparticles, and the SiO 2 nanoparticles are coated or adsorbed on the surface of the quantum dot. To modify the surface of the quantum dot.
  • wrapping or adsorbing the SiO 2 nanoparticles on the surface of the quantum dot includes the steps of: dissolving the quantum dots in a dispersion
  • a quantum dot dispersion is obtained; tetraethyl orthosilicate, cyclohexane, n-hexanol, polyoxyethylene-8-octylphenyl ether are mixed and stirred to obtain a light diffusion material stock solution; a point dispersion is mixed with the stock solution of the light diffusing material, and then NH 3 ⁇ H 2 O is added, stirred or ultrasonically dispersed to form a first mixed dispersion in which the quantum dots are overcoated or adsorbed with the light diffusing material; A first mixed dispersion is added to the photoresist mother liquor to form a second mixed dispersion.
  • the dispersing agent comprises chloroform, tetrahydrofuran, dichloromethane, toluene, n-hexane, methanol, ethanol, propanol, butanol, acetone, Any one or more of dioxane, dimethylformamide, and dimethyl sulfoxide.
  • the quantum dots include CdS, CdSe, CdTe, ZnS, ZnSe, ZnTe, HgS, HgTe, GaN, GaAs, InP, InAs.
  • the quantum dots are uniformly mixed, gradient mixed, core-shell or combined.
  • the quantum dots are red CdSe/ZnS type quantum dots or green CdSe/ZnS type quantum dots.
  • the photoresist mother liquid comprises a binder, a photoresist monomer, a photoinitiator, a solvent and a solvent capable of dissolving the photoresist. additive.
  • the mass percentage of the light diffusing material is 5%-30%, and the mass percentage of the quantum dot is 0.05%-50%.
  • the mass percentage of the binder is 20%-40%, the quality of the photoresist monomer
  • the percentage of the amount is from 1% to 10%
  • the mass percentage of the photoinitiator is from 1% to 3%
  • the mass percentage of the solvent that dissolves the photoresist is from 20% to 70%
  • the mass percentage of the active additive It It is 1%-3%.
  • the binder is an acrylic resin
  • the photoresist monomer is an acrylic monomer
  • the photoinitiator is diphenyl.
  • a ketone photoinitiator the solvent for dissolving the photoresist is a propylene glycol methyl ether acetate solvent
  • the active additive is a silane coupling agent.
  • At least one embodiment of the present invention also provides a quantum dot photoresist comprising: a light diffusing material, a quantum dot, and a photoresist mother liquor, wherein the light diffusing material or the quantum dot is subjected to surface treatment.
  • the light diffusing material is a surface modified TiO 2 nanoparticle, and the TiO 2 nanoparticle has lipophilicity.
  • the light diffusing material is SiO 2 nanoparticles, and the SiO 2 nanoparticles are coated or adsorbed on a surface of the quantum dot.
  • At least one embodiment of the present invention further provides a display substrate comprising: a substrate substrate; a color filter layer disposed on the substrate substrate; a quantum dot photoresist layer disposed on the color filter layer, Wherein the quantum dot photoresist layer comprises any of the above quantum dot photoresists.
  • At least one embodiment of the present invention also provides a display device including any of the above display substrates.
  • 1 is a schematic structural view of a quantum dot photoresist
  • FIG. 2 is a schematic structural view of another quantum dot photoresist
  • FIG. 3 is a spectrum diagram corresponding to the quantum dot photoresist shown in FIG. 1;
  • FIG. 4 is a flow chart of a method for preparing a quantum dot photoresist according to an embodiment of the present invention
  • FIG. 5 is a schematic structural diagram of a quantum dot photoresist according to an embodiment of the present invention.
  • FIG. 6 is a spectrum diagram corresponding to the quantum dot photoresist shown in FIG. 5;
  • FIG. 7 is a flowchart of another method for preparing a quantum dot photoresist according to an embodiment of the present invention.
  • FIG. 8 is a schematic structural diagram of a quantum dot photoresist according to an embodiment of the present invention.
  • Fig. 9 is a spectrum diagram corresponding to the quantum dot resist shown in Fig. 8.
  • the quantum dot layer in the color filter substrate is, for example, a quantum dot photoresist layer.
  • the quantum dots in the quantum dot photoresist layer may include red quantum dots and green quantum dots, and the quantum dots of the two colors can be excited to emit red and green light respectively after being irradiated by the blue light. It is thus used to display a color image.
  • the quantum dots are unevenly dispersed or there is a large gap between the quantum dots, when the blue light is irradiated to the gap between the quantum dots, the blue light is emitted from the light-emitting side of the display substrate without passing through the quantum dots. The waste of incident light is caused, and at the same time, the color mixture is mixed, so that the color purity of the emitted light is lowered, and the utilization rate of the incident light is low.
  • the light diffusing material can be added to the quantum dot photoresist to increase the refraction of the blue light, increasing the amount of light that illuminates the red and green quantum dots.
  • the light diffusing material is generally inorganic nanoparticles or microparticles, so that the light diffusing material is difficult to disperse in the organic phase to cause agglomeration, which causes a problem of low utilization of incident light.
  • At least one embodiment of the present invention provides a method of fabricating a quantum dot photoresist, a quantum dot photoresist, and a display substrate and display device including the same.
  • the method for preparing the quantum dot photoresist comprises mixing quantum dots, a light diffusing material, and a photoresist mother liquid, wherein the light diffusing material or the quantum dots are surface-treated.
  • the quantum dot photoresist prepared by the method for preparing the quantum dot photoresist can be applied to a display device, and the light diffusion material can refract incident light incident into the display substrate to, for example, a nearby quantum dot, so that the illumination is in the quantum.
  • the amount of light at the point increases, thereby improving the utilization of incident light and enhancing the display effect of the display device.
  • FIG. 1 is a schematic structural diagram of a quantum dot photoresist.
  • the quantum dot 02 particles are added to the photoresist mother liquid 03, the blue incident light is directly emitted due to the irradiation of the quantum dots, which not only wastes the incident.
  • the light also causes color mixing to reduce the color purity of the emitted light, and also makes the red or green quantum dot photoresist less efficient.
  • FIG. 2 is a schematic structural view of another quantum dot photoresist.
  • the photo-diffusion material 01 and the quantum dot 02 are directly added to the photoresist mother liquid 03, the photo-diffusion material may not be agglomerated due to agglomeration of the light-diffusing material.
  • the incident light is well refracted, which also causes some of the blue incident light to be directly emitted due to the inability to illuminate the quantum dots. This not only wastes the incident light, but also causes color mixing to reduce the color purity of the emitted light, and also makes the red or Green quantum dot photoresists have low luminous efficiency.
  • FIG. 3 is a spectrogram corresponding to the quantum dot photoresist shown in FIG. 1.
  • the quantum dot photoresist shown in FIG. 1 has a low utilization rate of blue light, and the intensity of the emitted red light is small, and the intensity of blue light is also small.
  • the intensity of the red light emitted from the light exit side is 0.02 unit intensity
  • the intensity of the blue light is 0.18 unit intensity, indicating that the blue light is greatly wasted.
  • Embodiments of the present invention provide a method for preparing a quantum dot photoresist, comprising: mixing a quantum dot, a light diffusing material, and a photoresist mother liquid, wherein the light diffusing material or the quantum dot is surface-treated.
  • the light-diffusing material is subjected to surface lipophilic treatment to coat or adsorb the quantum dots.
  • the quantum dots and the light diffusing material are uniformly dispersed in the mother liquor of the photoresist by ultrasonication or stirring.
  • the manner of stirring includes mechanical stirring, magnetic stirring, and the like.
  • the light diffusing material includes an organic light diffusing material and an inorganic light diffusing material.
  • the organic light diffusing material can refract and transmit light to change the direction of light propagation.
  • the organic light diffusing material mainly includes an acrylic type, a styrene type resin, etc.
  • the inorganic light diffusing material can refract light to change the light.
  • the direction of propagation, wherein the inorganic light diffusing material mainly comprises inorganic nanoparticles such as nano barium sulfate, nano calcium carbonate, nano silicon dioxide and nano titanium dioxide.
  • the light diffusing material used in the present embodiment is an inorganic nanoparticle.
  • the light diffusing material used in the examples is titanium oxide (TiO 2 ) inorganic nanoparticles.
  • a light diffusing material having a composition of TiO 2 inorganic nanoparticles is prepared in advance, and the previously prepared light diffusing material is mixed with a quantum dot and a photoresist mother liquid to obtain a mixed material.
  • FIG. 4 is a flowchart of a method for preparing a quantum dot photoresist according to an embodiment of the present invention.
  • the light diffusion material is TiO 2 nano particles
  • the method for preparing the quantum dot photoresist includes the following steps: 2 nanoparticles are added with a surfactant to modify the surface of the TiO 2 nanoparticles; the quantum dots and the photoresist mother liquid are mixed to form a dispersion A; and the modified TiO 2 nanoparticles are added to the dispersion A to form a dispersion. Liquid B; then Dispersion B is stirred or ultrasonically dispersed.
  • the TiO 2 nanoparticles exhibit a strong polarity, the surface will carry a hydroxyl group, causing it to be hydrophilic, and the photoresist mother liquor is a lipophilic system.
  • the TiO 2 nanoparticles with hydrophilic hydroxyl groups on the surface are added to the lipophilic photoresist mother liquor, the TiO 2 nanoparticles aggregate together due to surface energy to cause agglomeration, which affects the application of quantum dot photoresist.
  • the uniformity of film formation when the substrate is displayed which in turn causes unevenness of light emission when the color filter substrate is applied to a display device, reduces luminous efficiency, and ultimately causes poor display effect of the displayed image. Therefore, the surface of the nanoparticle TiO 2 modification treatment, the TiO 2 nanoparticles and a photoresist mother liquor binding capacity large van der Waals forces between the particles thereof.
  • methods of surface modification include: physical coating, chemical coating, precipitation reaction, and intercalation modification.
  • the chemical coating method is used to modify the surface of the TiO 2 nanoparticles by chemically reacting the functional groups in the organic molecules with the surface of the TiO 2 nanoparticles to thereby coat the surface of the TiO 2 nanoparticles. modified.
  • the polar group of the surfactant is adsorbed by the strongly polar TiO 2 nanoparticles with hydroxyl groups on the surface, and the non-polar part of the surfactant is outward, due to the special spatial structure and van der Waals force, in the TiO 2 nanoparticles a coating film layer formed on the surface thereby reducing the surface tension of the nanoparticle TiO 2, i.e.
  • the carbon chain of the organic molecule having a certain rigidity can prevent the TiO 2 nanoparticles from approaching each other, so as to prevent the aggregation of the TiO 2 nanoparticles, thereby effectively improving the dispersion performance of the TiO 2 nanoparticles in the oily medium.
  • surfactants used for modifying the surface of TiO 2 nanoparticles are mainly: cationic surfactants, for example, organic amines; nonionic surfactants, for example, polyols and derivatives thereof, epoxy An adduct of ethane and various organic hydrophobic groups; silicone; insoluble resins and lower aliphatic organic compounds containing halogen, alcohol, ketone, ether groups.
  • the surfactant used for modifying the surface of the TiO 2 nanoparticles may be: triethanolamine or a polyhydric alcohol.
  • the surfactant may also be: sodium lauryl sulfate, polyvinylpyrrolidone or stearic acid. Sodium and so on.
  • the surface modification of TiO 2 nanoparticles will be described below by taking triethanolamine or polyol as an example.
  • triethanolamine N(CH 2 CH 2 OH) 3
  • triethanolamine physically and chemically adsorbs on the surface of TiO 2 nanoparticles
  • triethanolamine has -OH and -CH 2 CH 2 - the two groups
  • the -CH 2 CH 2 - group in the triethanolamine is exposed to the outside and is compatible with the organic phase of the photoresist mother liquor
  • the -OH group in the triethanolamine and the surface of the TiO 2 nanoparticle are The highly polar hydroxyl group reacts to lower the surface tension of the TiO 2 nanoparticles.
  • reaction mechanism is: 3TiO 2 -OH + (HOCH 2 CH 2 ) 3 N ⁇ (TiO 2 -OCH 2 CH 2 ) 3 N+3H 2 O. It can be seen -CH 2 CH 2 N bound by oxygen bridges in the TiO 2 nano-particle surfaces, so that the organic particles and mother liquor photoresist TiO 2 nano compatible.
  • a polyol for example, propylene glycol, glycerin, sorbitol, etc.
  • a polyol for example, propylene glycol, glycerin, sorbitol, etc.
  • 1,3-propanediol, 1,3-propanediol having a hydroxyl group and a -CH 2 CH 2 CH 2 - group of two kinds 1,3-propanediol -CH 2 CH 2 CH 2 - group is exposed to organic photoresist compatible with the mother liquor, and 1,3-propanediol -OH groups react with TiO strongly polar hydroxyl group of 2 nm with a particle surface, so that TiO 2 nanoparticles The surface tension is reduced.
  • reaction mechanism of this process is: 2TiO 2 -OH + HOCH 2 CH 2 CH 2 OH ⁇ TiO 2 -OCH 2 CH 2 CH 2 O-TiO 2 + 2H 2 O, and it can be seen that -CH 2 CH 2 CH 2 - group bonded to the surface by an oxygen bridge TiO 2 nanoparticles, the organic particles and mother liquor photoresist TiO 2 nano compatible.
  • quantum dots can also be protected, making quantum dots difficult to quench.
  • the method by mixing quantum dots, nanoparticles TiO 2 and photoresist mother liquor of the TiO 2 nanoparticle surface modification treatment, the modified TiO 2 nanoparticles having hydroxyl groups originally hydrophilic surface become oleophilic surface So that it achieves a certain dispersion effect in the photoresist system.
  • a uniformly dispersed light diffusing material can improve light utilization. For example, a process is: when incident light enters the quantum dot photoresist system, the incident light can be refracted to the nearby quantum dots by the uniformly dispersed light diffusing material, so that the light irradiated on the quantum dots is increased, thereby Improve the utilization of incident light, thereby enhancing the display effect of the display device in subsequent applications.
  • FIG. 5 is a quantum prepared by the method for preparing a quantum dot photoresist provided in FIG.
  • a schematic diagram of the structure of the dot photoresist it can be seen from FIG. 5 that the light diffusing material 01 and the quantum dot 02 are uniformly dispersed in the photoresist mother liquid 03, and the incident light can pass through the uniformly dispersed light when entering the quantum dot photoresist system.
  • the diffusing material refracts incident light onto the quantum dots, so that the amount of light that illuminates the quantum dots increases, thereby increasing the utilization of incident light.
  • FIG. 6 is a spectrum corresponding to the quantum dot photoresist shown in FIG. 5, and the spectrum shown in FIG. 6 also shows that no TiO 2 nanoparticles and TiO 2 nanoparticles are directly added to the lithography without surface treatment.
  • the corresponding spectrogram of the quantum dot photoresist formed in the mother liquor was compared.
  • the spectrum shown in Fig. 6 is a comparison of light intensities in which blue light is incident light and red light is excited. As can be seen from Fig. 6, red light emitted from quantum dot photoresist without TiO 2 nanoparticles is shown.
  • the intensity is the smallest, 0.0051 unit strength; the intensity of the red light emitted from the quantum dot photoresist formed by directly adding the TiO 2 nanoparticle without surface treatment to the photoresist mother liquid is 0.011 unit strength; 2 after the surface-modified nanoparticles added strength photoresist resist red quantum dots formed in the mother liquor exiting the strongest intensity was 0.022 units. This shows that the surface modification of TiO 2 nanoparticles can significantly enhance the utilization of incident light.
  • the quantum dots include cadmium sulfide (CdS), cadmium selenide (CdSe), cadmium telluride (CdTe), zinc sulfide (ZnS), zinc selenide (ZnSe), and zinc telluride (ZnTe). ), one or more compounds of mercury sulfide (HgS), cadmium telluride (HgTe), gallium nitride (GaN), gallium arsenide (GaAs), indium phosphide (InP), indium arsenide (InAs) Quantum dots.
  • CdS cadmium sulfide
  • CdSe cadmium selenide
  • CdTe cadmium telluride
  • ZnS zinc sulfide
  • ZnSe zinc selenide
  • ZnTe zinc telluride
  • ZnTe zinc telluride
  • HgS mercury sulfide
  • the quantum dots may be uniformly mixed, gradient mixed, core-shell or combined. That is, the quantum dots may be uniformly mixed quantum dots, may be quantum dots with a gradient of concentration, or may be a coated core-shell structure formed by several quantum dots, or may be formed by a combination of quantum dots. A uniformly dispersed structure.
  • the quantum dots are red CdSe/ZnS type quantum dots or green CdSe/ZnS type quantum dots.
  • the red quantum dots emit red light under the excitation of blue light
  • the green quantum dots emit green light under the excitation of blue light.
  • the quantum dot photoresist can be composed of quantum dots emitting different colors, and each quantum dot selects a corresponding quantum dot according to the color that can be emitted. For example, when a red light needs to be emitted, a red CdSe/ZnS type quantum dot can be selected; When emitting green light, a green CdSe/ZnS type quantum dot can be used.
  • the type of quantum dots selected in the present embodiment is not limited as long as it can emit light of different colors as needed.
  • the photoresist mother liquor can include a binder, a photoresist monomer, a photoinitiator, a solvent that dissolves the photoresist, and an active additive.
  • the mass percentage of the light diffusing material may be 5% to 30%
  • the mass percentage of the quantum dots may be 0.05% to 50%
  • the mass percentage of the binder may be 20% to 40%
  • the quality of the photoresist monomer may be 1%-10%
  • the mass percentage of the photoinitiator may be 1%-3%
  • the mass percentage of the solvent which can dissolve the photoresist may be 20%-70%
  • the mass percentage of the active additive may be 1%. -3%.
  • the mass percentage of the light diffusing material may be 10%-20%.
  • the quantum dot photoresist has high utilization efficiency of light, and the quantum dot photoresist has good exposure, and when the quantum dot photoresist is exposed, There is no phenomenon of incomplete exposure and residual quantum dot photoresist.
  • the mass percentage of the light diffusing material may be 10%, the mass percentage of the quantum dot is 10%, the mass percentage of the binder is 30%, and the mass percentage of the photoresist monomer is 5%, light-induced
  • the mass percentage of the agent was 2%, the mass percentage of the solvent in which the photoresist was dissolved was 40%, and the mass percentage of the active additive was 3%.
  • quantum dot photoresists containing quantum dots of different colors correspond to different mass percentages of light diffusing materials. Since the red quantum dots have high conversion efficiency to blue light, in the quantum dot photoresist containing red quantum dots, the mass percentage of the light diffusion material can be small, for example, the mass percentage of the light diffusion material is 10%; The quantum dots have low conversion efficiency to blue light, so in a quantum dot photoresist containing green quantum dots, the mass percentage of the light diffusing material can be large, for example, the mass percentage of the light diffusing material is 25%.
  • the incident light may be blue light.
  • the red quantum dot When the blue light hits the red quantum dot, the red quantum dot is excited by the blue light to emit red light, and the red light is emitted from the light exit side of the quantum dot photoresist; when the blue light is irradiated onto the green quantum dot The green quantum dot is excited by the blue light to emit green light, and the green light is emitted from the light exiting side of the quantum dot photoresist; when the blue light is irradiated to the light diffusing material, the light diffusing material can be blue light After the refraction, the blue light is refracted, a part of the blue line is refracted to the quantum dot, and the other part is not refracted to the blue light on the quantum dot, and is emitted from the light exit side of the quantum dot photoresist.
  • the incident light can also be white light, which is a collection of light of various colors, including blue light components.
  • white light hits the red quantum dot
  • the red quantum dot is excited by the blue light component in the white light to emit red light.
  • the red light is emitted from the light exit side of the quantum dot photoresist; when the white light is irradiated to the green quantum
  • the green quantum dots are excited by the blue light component in the white light to emit green light, and the green light is photolithographically etched from the quantum dots.
  • the light exiting side of the glue is emitted; when the white light is irradiated to the light diffusing material, the light diffusing material can refract white light, and after the white light is refracted, a part of the white line is refracted to the quantum dot, and the other part is not refracted to the quantum.
  • the white light at the point is emitted from the light exit side of the quantum dot photoresist.
  • the binder is an acrylic resin
  • the photoresist monomer is an acrylic monomer
  • the photoinitiator is a benzophenone photoinitiator
  • the solvent for dissolving the photoresist is propylene glycol methyl ether acetate (PGMEA).
  • the solvent and the active additive are silane coupling agents.
  • the light diffusing material used in the embodiment of the present invention is silicon dioxide (SiO 2 ) inorganic nanoparticles.
  • a light diffusing material having a composition of silicon dioxide (SiO 2 ) is formed by quantum dots as seeds, and is synthesized on the surface of the quantum dots by seed growth to form a structure in which quantum dots are overcoated or adsorbed with SiO 2 inorganic nanoparticles.
  • the surface of the quantum dot is modified.
  • the quantum dots coated with or adsorbed with the SiO 2 inorganic nanoparticles are mixed with the mother liquor of the photoresist.
  • FIG. 7 is a flowchart of another method for preparing a quantum dot photoresist according to an embodiment of the present invention.
  • the light diffusing material is SiO 2
  • the method for preparing the quantum dot photoresist is, for example, a solution method, including Dispersing quantum dots in a dispersant to obtain a quantum dot dispersion; mixing tetraethyl orthosilicate, cyclohexane, n-hexanol, polyoxyethylene-8-octylphenyl ether and stirring to obtain light diffusion Material stock solution; mixing the quantum dot dispersion with the light diffusion material stock solution, adding NH 3 ⁇ H 2 O, stirring or ultrasonically dispersing to form a first mixed dispersion of quantum dots wrapped or adsorbed with the light diffusing material; The dispersion is added to the photoresist mother liquor to form a second mixed dispersion.
  • a specific example may include dispersing 2.5 g of quantum dots into 200 ml of chloroform, and performing ultrasonic dispersion to make a fluoroform solution in which quantum dots are dispersed into a clear dispersion, that is, forming a quantum dot dispersion; Silicate Si(OC 2 H 5 ) 4 , ie 120 ul TEOS, 15 ml cyclohexane, 30 ml n-hexanol, 3.5 ml polyoxyethylene-8-octyl phenyl ether mixed and stirred at room temperature for four hours to form a light diffusion material stock solution Adding the prepared photo-diffusion material stock solution to the already dispersed quantum dot dispersion liquid and stirring uniformly; then adding 100 ml of NH 3 ⁇ H 2 O to the above system and stirring uniformly, and continuously stirring for 24 hours in the dark.
  • a structure in which quantum dots are overwrapped or adsorbed with SiO 2 inorganic nanoparticles is formed to modify the surface of the quantum dots.
  • the quantum dots coated with or adsorbed with the SiO 2 inorganic nanoparticles and the mother liquor of the photoresist are mixed to form a quantum dot photoresist dispersion.
  • the dispersing agent for dissolving quantum dots may be tetrahydrofuran, dichloromethane, toluene, n-hexane, methanol, ethanol, propanol, butanol, acetone, dioxane, dimethylformamide, and dimethyl ester in addition to chloroform.
  • Ketosulfone and the like It may be a dispersing agent as described above, or may be the above dispersing agents mixture.
  • the quantum dot photoresist prepared by the method the light diffusion material SiO 2 can encapsulate or adsorb the quantum dots, not only can increase the stability of the quantum dots, reduce the quenching thereof in the organic photoresist, and can effectively utilize
  • the light diffusing material SiO 2 refracts light to improve the utilization of light.
  • the incident light enters the quantum dot photoresist system, it can be used multiple times.
  • the effect of the incident light through the light diffusion material can achieve multiple effective utilization effects, and the utilization rate of the incident light can be significantly improved.
  • FIG. 8 is a schematic structural diagram of a quantum dot photoresist prepared by the method for preparing a quantum dot photoresist according to an embodiment of the present invention.
  • the structure, composition, and composition of the photoresist mother liquor and the content of each component are described in the above description, and will not be described herein.
  • FIG. 9 is a spectrum corresponding to the quantum dot photoresist shown in FIG. 8.
  • the spectrum shown in FIG. 9 also shows that no SiO 2 and SiO 2 are added and the quantum dots are not formed into a coating or adsorption structure.
  • the corresponding spectrogram of the quantum dot photoresist formed in the mother liquor of the photoresist is compared.
  • the spectrum shown in Fig. 9 is a comparison of light intensities in which blue light is incident and emits red light. As can be seen from Fig. 9, the intensity of red light emitted from a quantum dot photoresist without silica is the smallest.
  • the intensity of red light emitted from the quantum dot photoresist formed by directly adding SiO 2 to the photoresist mother liquor is second, 0.022 unit strength; forming a coating or adsorption structure from SiO 2 and quantum dots
  • the red light emitted from the quantum dot photoresist formed by the addition of the photoresist mother liquid has the strongest intensity of 0.027 unit strength. It is indicated that the formation of the coated or adsorbed structure of SiO 2 and quantum dots can significantly enhance the utilization of incident light.
  • Embodiments of the present invention also provide a quantum dot photoresist comprising: a light diffusing material, a quantum dot, and a photoresist mother liquor, wherein the light diffusing material or quantum dots are subjected to surface treatment.
  • the light diffusing material is a surface modified TiO 2 nanoparticle, and the TiO 2 nanoparticle has lipophilicity. Treating the surface modified nanoparticles of TiO 2, TiO 2 nanoparticles are modified so that a hydrophilic hydroxyl had become lipophilic, so that it reaches a certain dispersing effect of the resist system.
  • the uniformly dispersed light diffusing material can improve the utilization of light.
  • the specific process is: when the incident light enters the quantum dot photoresist system, the incident light can be refracted to the quantum dots by the uniformly dispersed light diffusing material, so that the irradiation The amount of light on the quantum dots increases, thereby improving the utilization of incident light, thereby enhancing the display effect of the display device in subsequent applications.
  • the light diffusing material is nanoparticles of SiO 2, the SiO 2 nanoparticles coated or adsorbed on the surface of the quantum dot of the quantum dot surface to be modified.
  • the quantum dot photoresist modified by the method can not only increase the stability of the quantum dots, but also reduce the quenching in the organic photoresist, and can effectively refract light by using the SiO 2 light diffusion material to improve the light. Utilization rate.
  • the incident light enters the quantum dot photoresist system, it can be used multiple times. The effect of the incident light through the light diffusion material can achieve multiple effective utilization effects, and the utilization rate of the incident light can be significantly improved.
  • An embodiment of the present invention further provides a display substrate, the display substrate comprising: a substrate substrate; a color filter layer disposed on the substrate substrate; and a quantum dot photoresist layer disposed on the color filter layer, wherein the The quantum dot photoresist layer is any of the above quantum dot photoresists.
  • the embodiment further provides a display device including the display substrate described above.
  • the display device can be any product or component having a display function, such as a liquid crystal panel, an electronic paper, an OLED panel, a mobile phone, a tablet computer, a television, a display, a notebook computer, a digital photo frame, a navigator, and the like.
  • Embodiments of the present invention provide a quantum dot photoresist, a method of fabricating the same, a display substrate, and a display device.
  • the quantum dot photoresist prepared by the preparation method of the quantum dot photoresist can be applied to a display device, and the light diffusion material can refract incident light to the quantum dots, so that the light irradiated on the quantum dots increases, thereby improving the pair.
  • the utilization of incident light enhances the display effect of the display device.

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Abstract

一种量子点光刻胶及其制备方法、显示基板和显示装置。该量子点光刻胶的制备方法，包括：混合量子点(02)、光扩散材料(01)和光刻胶母液(03)，其中，对所述光扩散材料(01)或所述量子点(02)进行表面处理。用该量子点光刻胶的制备方法制备的量子点光刻胶可应用于显示装置中，光扩散材料(01)能够将入射光线折射至量子点(02)，使照射在量子点(02)上的光线增多，可解决入射光利用率较低的问题，可增强显示装置的显示效果。

Description

量子点光刻胶及其制备方法、显示基板和显示装置 技术领域
本发明的实施例涉及一种量子点光刻胶及其制备方法、显示基板和显示装置。
背景技术
随着显示技术的发展，显示装置的应用越来越广泛。显示基板是显示装置的重要组成部分，对显示装置的显示效果有很大的影响。显示基板例如可以为衬底基板，衬底基板例如包括彩色滤光层和形成在彩色滤光层上的量子点层。
发明内容
本发明至少一个实施例提供一种量子点光刻胶的制备方法，包括：混合量子点、光扩散材料和光刻胶母液，其中，对所述光扩散材料或所述量子点进行表面处理。
例如，在本发明一实施例提供的量子点光刻胶的制备方法中,通过超声或搅拌的方式使所述量子点、所述光扩散材料在所述光刻胶母液中分散均匀。
例如，在本发明一实施例提供的量子点光刻胶的制备方法中,所述光扩散材料为无机纳米颗粒。
例如，在本发明一实施例提供的量子点光刻胶的制备方法中,所述光扩散材料包括TiO2纳米颗粒或SiO2纳米颗粒。
例如，在本发明一实施例提供的量子点光刻胶的制备方法中,将预先制备的所述光扩散材料与所述光刻胶母液混合。
例如，在本发明一实施例提供的量子点光刻胶的制备方法中,所述光扩散材料为TiO2纳米颗粒，经表面改性处理后所述TiO2纳米颗粒具有亲油性。
例如，在本发明一实施例提供的量子点光刻胶的制备方法中,使用表面活性剂对所述TiO2纳米颗粒的表面进行改性处理，然后混合所述量子 点、所述TiO2纳米颗粒和所述光刻胶母液。
例如，在本发明一实施例提供的量子点光刻胶的制备方法中,所述表面活性剂为三乙醇胺或多元醇。
例如，在本发明一实施例提供的量子点光刻胶的制备方法中,所述三乙醇胺中的-CH2CH2N通过氧桥结合在所述TiO2纳米颗粒的表面。
例如，在本发明一实施例提供的量子点光刻胶的制备方法中,所述光扩散材料为SiO2纳米颗粒，且将所述SiO2纳米颗粒包裹或吸附在所述量子点的表面上，以对所述量子点的表面进行改性。
例如，在本发明一实施例提供的量子点光刻胶的制备方法中,将所述SiO2纳米颗粒包裹或吸附在所述量子点的表面上包括以下步骤：将所述量子点溶解在分散剂中，得到量子点分散液；将四乙基原硅酸盐，环己烷，正己醇，聚氧乙烯-8-辛基苯基醚混合并搅拌均匀得到光扩散材料原液；将所述量子点分散液与所述光扩散材料原液混合，再加入NH3·H2O，搅拌或超声分散形成所述量子点外包裹或吸附有所述光扩散材料的第一混合分散液；将所述第一混合分散液加入所述光刻胶母液中形成第二混合分散液。
例如，在本发明一实施例提供的量子点光刻胶的制备方法中,所述分散剂包括氯仿、四氢呋喃、二氯甲烷、甲苯、正己烷、甲醇、乙醇、丙醇、丁醇、丙酮、二氧六环、二甲基甲酰胺和二甲基亚砜中的任意一种或多种。
例如，在本发明一实施例提供的量子点光刻胶的制备方法中,所述量子点包括CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、HgS、HgTe、GaN、GaAs、InP、InAs中的一种或多种化合物的量子点。
例如，在本发明一实施例提供的量子点光刻胶的制备方法中,所述量子点是均一混合型、梯度混合型、核-壳型或联合型的。
例如，在本发明一实施例提供的量子点光刻胶的制备方法中,所述量子点为红色CdSe/ZnS型量子点或绿色CdSe/ZnS型量子点。
例如，在本发明一实施例提供的量子点光刻胶的制备方法中,所述光刻胶母液包括粘合剂、光刻胶单体、光引发剂、可溶解光刻胶的溶剂和活性添加剂。
例如，在本发明一实施例提供的量子点光刻胶的制备方法中,所述光扩散材料的质量百分比为5％-30％,所述量子点的质量百分比为0.05％-50％，所述粘合剂的质量百分比为20％-40％,所述光刻胶单体的质 量百分比为1％-10％,所述光引发剂的质量百分比为1％-3％,所述可溶解光刻胶的溶剂的质量百分比为20％-70％,所述活性添加剂的质量百分比为1％-3％。
例如，在本发明一实施例提供的量子点光刻胶的制备方法中,所述粘合剂为丙烯酸树脂,所述光刻胶单体为丙烯酸类单体,所述光引发剂为二苯甲酮类光引发剂,所述可溶解光刻胶的溶剂为丙二醇甲醚醋酸酯溶剂,所述活性添加剂为硅烷偶联剂。
本发明至少一个实施例还提供一种量子点光刻胶，包括：光扩散材料、量子点和光刻胶母液，其中，所述光扩散材料或所述量子点进行过表面处理。
例如，在本发明一实施例提供的量子点光刻胶中，所述光扩散材料为经表面改性处理后的TiO2纳米颗粒，所述TiO2纳米颗粒具有亲油性。
例如，在本发明一实施例提供的量子点光刻胶中，所述光扩散材料为SiO2纳米颗粒，所述SiO2纳米颗粒包裹或吸附在所述量子点的表面上。
本发明至少一个实施例还提供一种显示基板，包括：衬底基板；设置在所述衬底基板上的彩色滤光层；设置在所述彩色滤光层上的量子点光刻胶层，其中所述量子点光刻胶层包括上述任一量子点光刻胶。
本发明至少一个实施例还提供一种显示装置，包括上述任一显示基板。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为一种量子点光刻胶的结构示意图；
图2为另一种量子点光刻胶的结构示意图；
图3为图1所示的量子点光刻胶对应的光谱图；
图4为本发明一实施例提供的量子点光刻胶的制备方法的流程图；
图5为本发明一实施例提供的量子点光刻胶的结构示意图；
图6为图5所示的量子点光刻胶对应的光谱图；
图7为本发明一实施例提供的量子点光刻胶的另一制备方法的流程 图；
图8为本发明一实施例提供的量子点光刻胶的结构示意图；
图9为图8所示的量子点光刻胶对应的光谱图。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。
彩膜基板中的量子点层例如为量子点光刻胶层。例如，量子点光刻胶层中的量子点可以包括红色量子点和绿色量子点，且这两种颜色的量子点在受到蓝色光线的照射后，能够分别被激发出红色、绿色的光，从而用于显示彩色图像。但是，如果量子点分散不均匀或量子点之间存在较大间隙，则当蓝色光线照射到量子点之间的间隙时，蓝色光线未经过量子点就从该显示基板的出光侧射出，造成了入射光线的浪费，同时造成了混色而使得出射光的颜色纯净度下降，入射光线的利用率较低。
光扩散材料可以添加到量子点光刻胶中，增加对蓝色光线的折射，使照射到红色量子点和绿色量子点的光线增多。光扩散材料一般为无机的纳米颗粒或者微米颗粒，因此光扩散材料很难在有机相中分散而产生团聚，这样会造成对入射光线的利用率较低的问题。
本发明至少一实施例提供一种量子点光刻胶的制备方法、量子点光刻胶以及包含该量子点光刻胶的显示基板和显示装置。该量子点光刻胶的制备方法包括混合量子点、光扩散材料和光刻胶母液，其中，对光扩散材料或量子点进行表面处理。
用该量子点光刻胶的制备方法制备的量子点光刻胶可应用于显示装置中，光扩散材料能够将入射至显示基板中的入射光线折射至例如附近的量子点上，使得照射在量子点上的光线增多，从而提高对入射光线的利用率，增强显示装置的显示效果。
例如，图1为一种量子点光刻胶的结构示意图，量子点02颗粒加入到光刻胶母液03中后，会导致蓝色入射光线因照射不到量子点而直接出射，不仅浪费了入射光线，还会造成混色而使得出射光的颜色纯净度下降，也使红色或绿色的量子点光刻胶发光效率低。
例如，图2为另一种量子点光刻胶的结构示意图，未经过处理的光扩散材料01和量子点02直接加入到光刻胶母液03中后，会因为光扩散材料的团聚而不能对入射光进行很好的折射，同样会导致部分蓝色入射光因照射不到量子点而直接出射，不仅浪费了入射光，还会造成混色而使得出射光的颜色纯净度下降，也使红色或绿色的量子点光刻胶发光效率低。
例如，图3为图1所示的量子点光刻胶对应的光谱图。图1所示的量子点光刻胶对蓝色光线的利用率较低，出射的红色光线的强度较小，且蓝光的强度也较小。例如，从图3可以看出，从出光侧射出的红色光线的强度为0.02个单位强度，蓝色光线的强度为0.18个单位强度，说明对蓝色光线造成了很大的浪费。
本发明实施例提供一种量子点光刻胶的制备方法，包括：混合量子点、光扩散材料和光刻胶母液，其中，对光扩散材料或量子点进行表面处理。例如，对光扩散材料进行表面亲油性处理，对量子点进行包覆或者吸附处理。
例如，通过超声或搅拌的方式使量子点、光扩散材料在光刻胶母液中分散均匀。例如，搅拌的方式包括机械搅拌、磁力搅拌等。
例如，光扩散材料包括有机光扩散材料和无机光扩散材料。有机光扩散材料能够对光线进行折射和透射来改变光线的传播方向，其中，有机光扩散材料主要包括压克力型、苯乙烯型树脂等；无机光扩散材料能够对光线进行折射来改变光线的传播方向，其中，无机光扩散材料主要包括纳米硫酸钡、纳米碳酸钙、纳米二氧化硅和纳米二氧化钛等无机纳米颗粒。例如，在本实施例中使用的光扩散材料是无机纳米颗粒。
例如，在实施例中使用的光扩散材料为二氧化钛(TiO2)无机纳米颗 粒。
例如，预先制备成分为TiO2无机纳米颗粒的光扩散材料，再将该预先制备的光扩散材料与量子点和光刻胶母液混合，得到混合材料。
例如，图4为本发明一实施例提供的一种量子点光刻胶的制备方法的流程图，该光扩散材料为TiO2纳米颗粒，量子点光刻胶的制备方法包括以下步骤：向TiO2纳米颗粒加入表面活性剂，对TiO2纳米颗粒的表面进行改性处理；混合量子点和光刻胶母液形成分散液A；把改性后的TiO2纳米颗粒加入到分散液A中形成分散液B；然后对分散液B进行搅拌或超声分散。
例如，TiO2纳米颗粒在合成之后，表现为强极性，表面会带有羟基，导致其呈现亲水性，而光刻胶母液为亲油性体系。当表面具有亲水性羟基的TiO2纳米颗粒加入到亲油性的光刻胶母液中时，TiO2纳米颗粒因表面能而聚集到一起引起团聚现象的发生，影响量子点光刻胶在应用于显示基板时成膜的均匀性，进而导致该彩膜基板应用于显示装置时出光不均匀，降低发光效率，最终导致被显示的图像的显示效果差。所以，对TiO2纳米颗粒的表面进行改性处理，可以使TiO2纳米颗粒和光刻胶母液的结合能力大于其颗粒之间的范德华力。
例如，表面改性的方法包括：物理涂覆、化学包覆、沉淀反应和插层改性等。在本示例中，利用化学包覆的方法进行改性，利用有机物分子中的官能团与TiO2纳米颗粒的表面发生化学反应，对TiO2纳米颗粒的表面进行包覆，从而使TiO2纳米颗粒表面改性。表面活性剂的极性基与表面带有羟基的强极性TiO2纳米颗粒吸附,表面活性剂的非极性部分向外,由于特殊的空间结构以及范德华力的作用,在TiO2纳米颗粒的表面形成一层包覆膜从而降低了TiO2纳米颗粒的表面张力,即在TiO2纳米颗粒的表面形成新的功能层。有机物分子具有一定刚度的碳链可以阻止TiO2纳米颗粒的相互接近，以达到阻止TiO2纳米颗粒凝聚的目的，从而有效地提高TiO2纳米颗粒在油性介质中的分散性能。
例如，对TiO2纳米颗粒的表面进行改性使用的表面活性剂主要有:阳离子型表面活性剂,例如，有机胺类；非离子型表面活性剂,例如，多元醇及其衍生物、环氧乙烷和各种有机憎水基的加成物；有机硅；不溶性树脂以及含卤素、醇、酮、醚类基团的低级脂肪族有机化合物。
例如，对TiO2纳米颗粒的表面进行改性使用的表面活性剂可以为：三乙醇胺或多元醇，例如，该表面活性剂还可以为：十二烷基硫酸钠、聚乙烯吡咯烷酮或硬脂酸钠等。下面以三乙醇胺或多元醇为例对TiO2纳米颗粒的表面改性加以说明。
例如，当使用三乙醇胺(N(CH2CH2OH)3)作为表面活性剂时，三乙醇胺在TiO2纳米颗粒的表面发生物理吸附和化学吸附，三乙醇胺具有-OH和-CH2CH2-这两种基团，三乙醇胺中的-CH2CH2-基团暴露在外面与光刻胶母液的有机相相溶，而三乙醇胺中-OH基团与TiO2纳米颗粒表面带有的强极性的羟基发生反应，使TiO2纳米颗粒的表面张力降低。例如，反应机理为：3TiO2-OH+(HOCH2CH2)3N→(TiO2-OCH2CH2)3N+3H2O。可以看出-CH2CH2N靠氧桥结合在TiO2纳米颗粒表面，使TiO2纳米颗粒与光刻胶母液的有机相相溶。
例如，当使用多元醇(例如丙二醇、甘油、山梨醇等)作为表面活性剂时。具体地，以1,3-丙二醇为例加以说明，1,3-丙二醇具有羟基和-CH2CH2CH2-两种基团，1,3-丙二醇中的-CH2CH2CH2-基团暴露在外面与光刻胶母液的有机相相溶，而1,3-丙二醇中-OH基团与TiO2纳米颗粒表面带有的强极性的羟基发生反应，使TiO2纳米颗粒的表面张力降低。例如，该过程的反应机理为：2TiO2-OH+HOCH2CH2CH2OH→TiO2-OCH2CH2CH2O-TiO2+2H2O，可以看出-CH2CH2CH2-基团靠氧桥结合在TiO2纳米颗粒的表面，使TiO2纳米颗粒与光刻胶母液的有机相相溶。
例如，利用多元醇做表面活性剂，还可以对量子点加以保护，使量子点不易淬灭。
该方法通过混合量子点、TiO2纳米颗粒和光刻胶母液，对TiO2纳米颗粒的表面进行改性处理，使原本带羟基的表面亲水性的TiO2纳米颗粒改性成为表面亲油性的，从而使其在光刻胶体系中达到一定的分散效果。均匀分散的光扩散材料可以提高光的利用率。例如，一种过程为：当入射光进入该量子点光刻胶体系中时可以通过均匀分散的光扩散材料把入射光折射至附近的量子点上，使得照射在量子点上的光线增多，从而提高对入射光的利用率，进而增强后续应用中显示装置的显示效果。
例如，图5是利用图4中提供的量子点光刻胶的制备方法制备的量子 点光刻胶的结构示意图，从图5可以看出光扩散材料01和量子点02均匀地分散于光刻胶母液03中，入射光进入该量子点光刻胶体系中时可以通过均匀分散的光扩散材料把入射光折射至量子点上，使得照射在量子点上的光线增多，从而提高了对入射光的利用率。
例如，图6是图5所示的量子点光刻胶对应的光谱图，图6所示的光谱图也给出了不加TiO2纳米颗粒和TiO2纳米颗粒不经过表面处理直接加入光刻胶母液中形成的量子点光刻胶对应的光谱图进行对照。图6所示的光谱图是蓝光为入射光并激发出红光的光强度比较图，从图6中可以看出，从不加TiO2纳米颗粒的量子点光刻胶中射出的红光的强度最小，为0.0051个单位强度；从TiO2纳米颗粒不经过表面处理直接加入光刻胶母液中形成的量子点光刻胶中射出的红光的强度次之，为0.011个单位强度；从TiO2纳米颗粒经过表面改性后加入光刻胶母液中形成的量子点光刻胶中射出的红光的强度最强，为0.022个单位强度。这说明对TiO2纳米颗粒进行表面改性后可以明显地增强入射光的利用率。
本发明的实施例中，例如，量子点包括硫化镉(CdS)、硒化镉(CdSe)、碲化镉(CdTe)、硫化锌(ZnS)、硒化锌(ZnSe)、碲化锌(ZnTe)、硫化汞(HgS)、碲化镉(HgTe)、氮化镓(GaN)、砷化镓(GaAs)、磷化铟(InP)、砷化铟(InAs)中的一种或多种化合物的量子点。
例如，量子点可以是均一混合型、梯度混合型、核-壳型或联合型的。即量子点可以是均匀混合的量子点，可以是的浓度呈梯度混合的量子点，也可以是其中的几种量子点形成的包覆型核壳结构，还可以是量子点之间联合形成的均匀分散的结构。
例如，量子点为红色CdSe/ZnS型量子点或绿色CdSe/ZnS型量子点。红色量子点在蓝色光线的激发下能够发出红色的光，绿色量子点在蓝色光线的激发下能够发出绿色的光。量子点光刻胶可以由发出不同颜色的量子点组成，每个量子点根据可发出颜色的不同选择相应的量子点，例如，需要发出红光时，可选用红色CdSe/ZnS型量子点；需要发出绿光时，可选用绿色CdSe/ZnS型量子点。只要能够根据需要发出不同颜色的光，本实施例中对所选用的量子点的类型不做限制。
例如，光刻胶母液可以包括粘合剂、光刻胶单体、光引发剂、可溶解光刻胶的溶剂和活性添加剂。
例如，光扩散材料的质量百分比可以为5％-30％,量子点的质量百分比可以为0.05％-50％，粘合剂的质量百分比可以为20％-40％,光刻胶单体的质量百分比可以为1％-10％,光引发剂的质量百分比可以为1％-3％,可溶解光刻胶的溶剂的质量百分比可以为20％-70％,活性添加剂的质量百分比可以为1％-3％。
例如，在量子点光刻胶中，光扩散材料的质量百分比可以为10％-20％。当光扩散材料的质量百分比为10％-20％时，量子点光刻胶对光线的利用率高，且量子点光刻胶的曝光性好，在对该量子点光刻胶进行曝光时，不会出出现曝光不完全和量子点光刻胶残留的现象。
例如，更具体地，光扩散材料的质量百分比可以为10％,量子点的质量百分比为10％，粘合剂的质量百分比为30％,光刻胶单体的质量百分比为5％,光引发剂的质量百分比为2％,可溶解光刻胶的溶剂的质量百分比为40％,活性添加剂的质量百分比为3％。
需要说明的是包含不同颜色量子点的量子点光刻胶对应不同质量百分比的光扩散材料。由于红色量子点对蓝色光线的转化效率高，所以在包含红色量子点的量子点光刻胶中，光扩散材料的质量百分比可以较小，例如光扩散材料的质量百分比为10％；由于绿色量子点对蓝色光线的转化效率低，所以在包含绿色量子点的量子点光刻胶中，光扩散材料的质量百分比可以较大，例如光扩散材料的质量百分比为25％。
需要说明的是，入射光可以是蓝色光线。当蓝色光线照射到红色量子点上时，红色量子点受到蓝色光线的激发而发出红色的光线，红色光线从量子点光刻胶的出光侧射出；当蓝色光线照射到绿色量子点上时，该绿色量子点受到蓝色光线的激发而发出绿色的光线，绿色光线从量子点光刻胶的出光侧射出；当蓝色光线照射到光扩散材料时，光扩散材料能够对蓝色光线进行折射，蓝色光线被折射后，一部分蓝色线会被折射至量子点上，另一部分未被折射至量子点上的蓝色光线，从量子点光刻胶的出光侧射出。
入射光也可以是白色光线，白色光线为各种颜色光线的集合，其中包括蓝色光线成分。当白色光线照射到红色量子点上时，红色量子点受到白色光线中蓝色光线成分的激发而发出红色的光线，红色光线从量子点光刻胶的出光侧射出；当白色光线照射到绿色量子点上时，绿色量子点受到白色光线中蓝色光线成分的激发而发出绿色的光线，绿色光线从量子点光刻 胶的出光侧射出；当白色光线照射到光扩散材料时，光扩散材料能够对白色光线进行折射，白色光线被折射后，一部分白色线会被折射至量子点上，另一部分未被折射至量子点上的白色光线，从量子点光刻胶的出光侧射出。
例如，粘合剂为丙烯酸树脂,光刻胶单体为丙烯酸类单体,光引发剂为二苯甲酮类光引发剂,可溶解光刻胶的溶剂为丙二醇甲醚醋酸酯(简称PGMEA)溶剂,活性添加剂为硅烷偶联剂。
例如，在本发明实施例中使用的光扩散材料为二氧化硅(SiO2)无机纳米颗粒。
例如，成分为二氧化硅(SiO2)的光扩散材料以量子点为种子，以种子生长的方式在量子点的表面合成，形成量子点外包裹或吸附有SiO2无机纳米颗粒的结构，以对量子点的表面进行改性。再将包裹或吸附有SiO2无机纳米颗粒的量子点和光刻胶母液混合。
例如，图7为本发明一实施例提供的量子点光刻胶的另一制备方法的流程图，该光扩散材料为SiO2，该量子点光刻胶的制备方法，例如为溶液法，包括：将量子点分散在分散剂中，得到量子点分散液；将四乙基原硅酸盐，环己烷，正己醇，聚氧乙烯-8-辛基苯基醚混合并搅拌均匀得到光扩散材料原液；将量子点分散液与光扩散材料原液混合，再加入NH3·H2O，搅拌或超声分散形成量子点外包裹或吸附有光扩散材料的第一混合分散液；将第一混合分散液加入光刻胶母液中形成第二混合分散液。
例如，具体的示例可以包括：将2.5g量子点分散到200ml的氯仿中，进行超声分散，使分散有量子点的氯仿溶液成为澄清的分散液，即形成量子点分散液；将四乙基原硅酸盐Si(OC2H5)4即120ul TEOS，15ml环己烷，30ml正己醇，3.5ml聚氧乙烯-8-辛基苯基醚混合并在室温下搅拌四小时形成光扩散材料原液；把制备好的光扩散材料原液加入已经分散好的量子点分散液中，搅拌均匀；再将100ml NH3·H2O，加入上述体系中继续搅拌均匀，持续的进行避光搅拌24小时，形成量子点外包裹或吸附有SiO2无机纳米颗粒的结构，以对量子点的表面进行改性。再将包裹或吸附有SiO2无机纳米颗粒的量子点和光刻胶母液混合形成量子点光刻胶分散液。
例如，溶解量子点的分散剂除了氯仿，还可以是四氢呋喃、二氯甲烷、甲苯、正己烷、甲醇、乙醇、丙醇、丁醇、丙酮、二氧六环、二甲基甲酰胺和二甲基亚砜等。可以是上述的一种分散剂，也可以是上述几种分散剂 的混合物。
用该方法制备的量子点光刻胶，光扩散材料SiO2可以对量子点进行包裹或吸附，不仅能增加量子点的稳定性减少其在有机光刻胶中的淬灭，而且可以有效地利用光扩散材料SiO2对光进行折射，提高光的利用率。当入射光进入量子点光刻胶体系中时可以被多次利用，入射光经过光扩散材料的作用可以实现多次有效利用的效果，可以显著提高入射光的利用率。
图8为本发明实施例提供的量子点光刻胶的制备方法制备的量子点光刻胶的结构示意图。量子点的结构、成分和光刻胶母液的组成成分及各组分的含量参见上述中的描述，在此不再赘述。
例如，图9是图8所示的量子点光刻胶对应的光谱图，图9所示的光谱图也给出了不加SiO2和SiO2与量子点不形成包覆或吸附结构直接加入光刻胶母液中形成的量子点光刻胶对应的光谱图进行对照。图9所示的光谱图是蓝光入射并发出红光的光强度比较图，从图9中可以看出，从不加二氧化硅的量子点光刻胶中射出的红光的强度最小，为0.0062个单位强度；从SiO2直接加入光刻胶母液中形成的量子点光刻胶中射出的红光的强度次之，为0.022个单位强度；从SiO2和量子点形成包覆或吸附结构后加入光刻胶母液中形成的量子点光刻胶中射出的红光的强度最强，为0.027个单位强度。说明SiO2和量子点形成包覆或吸附结构后可以明显地增强入射光的利用率。
本发明的实施例还提供一种量子点光刻胶，该量子点光刻胶包括：光扩散材料、量子点和光刻胶母液，其中，光扩散材料或量子点进行过表面处理。
例如，该光扩散材料为经过表面改性处理后的TiO2纳米颗粒，该TiO2纳米颗粒具有亲油性。对TiO2纳米颗粒的表面进行改性处理，使原本带羟基的具有亲水性的TiO2纳米颗粒改性成为亲油性的，从而使其在光刻胶体系中达到一定的分散效果。均匀分散的光扩散材料可以提高光的利用率，具体过程为：当入射光进入该量子点光刻胶体系中时可以通过均匀分散的光扩散材料把该入射光线折射至量子点上，使得照射在量子点上的光线增多，从而可提高对入射光的利用率，进而可增强后续应用中显示装置的显示效果。
例如，该光扩散材料为SiO2纳米颗粒，该SiO2纳米颗粒包裹或吸附 在量子点的表面以对量子点的表面进行改性。经过该方法改性后的量子点光刻胶不仅能增加量子点的稳定性减少其在有机光刻胶中的淬灭，而且可以有效地利用SiO2光扩散材料对光进行折射，提高光的利用率。当入射光进入量子点光刻胶体系中时可以被多次利用，入射光经过光扩散材料的作用可以实现多次有效利用的效果，可以显著提高入射光的利用率。
本发明的实施例还提供一种显示基板，该显示基板包括：衬底基板；设置在衬底基板上的彩色滤光层；设置在彩色滤光层上的量子点光刻胶层，其中该量子点光刻胶层为上述任一的量子点光刻胶。
本实施例还提供一种显示装置，该显示装置包括上述中的显示基板。该显示装置可以为：液晶面板、电子纸、OLED面板、手机、平板电脑、电视机、显示器、笔记本电脑、数码相框、导航仪等任何具有显示功能的产品或部件。
本发明的实施例提供一种量子点光刻胶及其制备方法、显示基板和显示装置。用该量子点光刻胶的制备方法制备的量子点光刻胶可应用于显示装置中，光扩散材料能够将入射光线折射至量子点上，使得照射在量子点上的光线增多，从而提高对入射光线的利用率，增强显示装置的显示效果。
有以下几点需要说明：
(1)本发明实施例的附图只涉及到与本发明实施例涉及到的结构，其他结构可参考通常设计。
(2)为了清晰起见，在用于描述本发明的实施例的附图中，层或区域的厚度被放大或缩小，即这些附图并非按照实际的比例绘制。
(3)在不冲突的情况下，本发明的实施例及实施例中的特征可以相互组合以得到新的实施例。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，本发明的保护范围应以所述权利要求的保护范围为准。
本申请要求于2016年4月29日递交的中国专利申请第201610282658.5号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (23)

  1. 一种量子点光刻胶的制备方法，包括：混合量子点、光扩散材料和光刻胶母液，其中，对所述光扩散材料或所述量子点进行表面处理。
  2. 根据权利要求1所述的量子点光刻胶的制备方法，其中,通过超声或搅拌的方式使所述量子点、所述光扩散材料在所述光刻胶母液中分散均匀。
  3. 根据权利要求1所述的量子点光刻胶的制备方法，其中,所述光扩散材料为无机纳米颗粒。
  4. 根据权利要求3所述的量子点光刻胶的制备方法，其中，所述光扩散材料包括TiO2纳米颗粒或SiO2纳米颗粒。
  5. 根据权利要求1所述的量子点光刻胶的制备方法，其中，将预先制备的所述光扩散材料与所述光刻胶母液混合。
  6. 根据权利要求5所述的量子点光刻胶的制备方法，其中，所述光扩散材料为TiO2纳米颗粒，经表面改性处理后所述TiO2纳米颗粒具有亲油性。
  7. 根据权利要求6所述的量子点光刻胶的制备方法，其中，使用表面活性剂对所述TiO2纳米颗粒的表面进行改性处理，然后混合所述量子点、所述TiO2纳米颗粒和所述光刻胶母液。
  8. 根据权利要求7所述的量子点光刻胶的制备方法，其中，所述表面活性剂为三乙醇胺或多元醇。
  9. 根据权利要求8所述的量子点光刻胶的制备方法，其中，所述三乙醇胺中的-CH2CH2N通过氧桥结合在所述TiO2纳米颗粒的表面。
  10. 根据权利要求5所述的量子点光刻胶的制备方法，其中，所述光扩散材料为SiO2纳米颗粒，且将所述SiO2纳米颗粒包裹或吸附在所述量子点的表面上，以对所述量子点的表面进行改性。
  11. 根据权利要求10所述的量子点光刻胶的制备方法，其中，将所述SiO2纳米颗粒包裹或吸附在所述量子点的表面上包括以下步骤：
    将所述量子点溶解在分散剂中，得到量子点分散液；
    将四乙基原硅酸盐、环己烷、正己醇、聚氧乙烯-8-辛基苯基醚混合并搅拌均匀得到光扩散材料原液；
    将所述量子点分散液与所述光扩散材料原液混合，再加入NH3·H2O，搅拌或超声分散形成所述量子点外包裹或吸附有所述光扩散材料的第一混合分散液；
    将所述第一混合分散液加入所述光刻胶母液中形成第二混合分散液。
  12. 根据权利要求11所述的量子点光刻胶的制备方法，其中，所述分散剂包括氯仿、四氢呋喃、二氯甲烷、甲苯、正己烷、甲醇、乙醇、丙醇、丁醇、丙酮、二氧六环、二甲基甲酰胺和二甲基亚砜中的任意一种或多种。
  13. 根据权利要求6-12任一项所述的量子点光刻胶的制备方法，其中，所述量子点包括CdS、CdSe、CdTe、ZnS、ZnSe、ZnTe、HgS、HgTe、GaN、GaAs、InP、InAs中的一种或多种化合物的量子点。
  14. 根据权利要求13所述的量子点光刻胶的制备方法，其中，所述量子点是均一混合型、梯度混合型、核-壳型或联合型。
  15. 根据权利要求14所述的量子点光刻胶的制备方法，其中，所述量子点为红色CdSe/ZnS型量子点或绿色CdSe/ZnS型量子点。
  16. 根据权利要求6-12任一项所述的量子点光刻胶的制备方法，其中，所述光刻胶母液包括粘合剂、光刻胶单体、光引发剂、可溶解光刻胶的溶剂和活性添加剂。
  17. 根据权利要求16所述的量子点光刻胶的制备方法，其中，所述光扩散材料的质量百分比为5％-30％,所述量子点的质量百分比为0.05％-50％，所述粘合剂的质量百分比为20％-40％,所述光刻胶单体的质量百分比为1％-10％,所述光引发剂的质量百分比为1％-3％,所述可溶解光刻胶的溶剂的质量百分比为20％-70％,所述活性添加剂的质量百分比为1％-3％。
  18. 根据权利要求16所述的量子点光刻胶的制备方法，其中，所述粘合剂为丙烯酸树脂,所述光刻胶单体为丙烯酸类单体,所述光引发剂为二苯甲酮类光引发剂,所述可溶解光刻胶的溶剂为丙二醇甲醚醋酸酯溶剂,所述活性添加剂为硅烷偶联剂。
  19. 一种量子点光刻胶，包括：光扩散材料、量子点和光刻胶母液，其中，所述光扩散材料或所述量子点进行过表面处理。
  20. 根据权利要求19所述的量子点光刻胶，其中，所述光扩散材料为经表面改性处理后的TiO2纳米颗粒，所述TiO2纳米颗粒具有亲油性。
  21. 根据权利要求19所述的量子点光刻胶，其中，所述光扩散材料为SiO2纳米颗粒，所述SiO2纳米颗粒包裹或吸附在所述量子点的表面上。
  22. 一种显示基板，包括：
    衬底基板；
    设置在所述衬底基板上的彩色滤光层；
    设置在所述彩色滤光层上的量子点光刻胶层，其中所述量子点光刻胶层包括权利要求19-21任一项所述的量子点光刻胶。
  23. 一种显示装置，包括权利要求22所述的显示基板。
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