WO2017185410A1 - 内嵌触摸屏及其制备方法、液晶显示器 - Google Patents

内嵌触摸屏及其制备方法、液晶显示器 Download PDF

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Publication number
WO2017185410A1
WO2017185410A1 PCT/CN2016/081778 CN2016081778W WO2017185410A1 WO 2017185410 A1 WO2017185410 A1 WO 2017185410A1 CN 2016081778 W CN2016081778 W CN 2016081778W WO 2017185410 A1 WO2017185410 A1 WO 2017185410A1
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Prior art keywords
insulating layer
layer
disposed
touch sensing
sensing electrode
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PCT/CN2016/081778
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English (en)
French (fr)
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李曼
郭星灵
邢振周
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武汉华星光电技术有限公司
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Priority to US15/100,370 priority Critical patent/US10095335B2/en
Publication of WO2017185410A1 publication Critical patent/WO2017185410A1/zh

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    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0412—Digitisers structurally integrated in a display
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/13338—Input devices, e.g. touch panels
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1335—Structural association of cells with optical devices, e.g. polarisers or reflectors
    • G02F1/133509—Filters, e.g. light shielding masks
    • G02F1/133514—Colour filters
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/1343—Electrodes
    • G02F1/13439—Electrodes characterised by their electrical, optical, physical properties; materials therefor; method of making
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/0416—Control or interface arrangements specially adapted for digitisers
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F3/00—Input arrangements for transferring data to be processed into a form capable of being handled by the computer; Output arrangements for transferring data from processing unit to output unit, e.g. interface arrangements
    • G06F3/01—Input arrangements or combined input and output arrangements for interaction between user and computer
    • G06F3/03—Arrangements for converting the position or the displacement of a member into a coded form
    • G06F3/041—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means
    • G06F3/044—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means
    • G06F3/0443—Digitisers, e.g. for touch screens or touch pads, characterised by the transducing means by capacitive means using a single layer of sensing electrodes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333—Constructional arrangements; Manufacturing methods
    • G02F1/133302—Rigid substrates, e.g. inorganic substrates
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G02F1/136286—Wiring, e.g. gate line, drain line
    • G02F1/136295—Materials; Compositions; Manufacture processes
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/121—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode common or background
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/12—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode
    • G02F2201/123—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 electrode pixel
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04103—Manufacturing, i.e. details related to manufacturing processes specially suited for touch sensitive devices
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04104—Multi-touch detection in digitiser, i.e. details about the simultaneous detection of a plurality of touching locations, e.g. multiple fingers or pen and finger
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F2203/00—Indexing scheme relating to G06F3/00 - G06F3/048
    • G06F2203/041—Indexing scheme relating to G06F3/041 - G06F3/045
    • G06F2203/04111—Cross over in capacitive digitiser, i.e. details of structures for connecting electrodes of the sensing pattern where the connections cross each other, e.g. bridge structures comprising an insulating layer, or vias through substrate

Definitions

  • the present invention relates to the field of touch technologies, and in particular, to an embedded touch screen and a method for fabricating the same, and to a liquid crystal display including the embedded touch screen.
  • the touch screen is the simplest and most convenient way of human-computer interaction, so the touch screen is increasingly applied to various electronic products.
  • touch screen products can be divided into four types: infrared touch screen, capacitive touch screen, resistive touch screen and surface acoustic wave touch screen; among them, capacitive touch screen has long life, high light transmittance and can support many Point touch and other advantages have become the mainstream touch screen technology.
  • Capacitive touch screens include surface capacitive and projected capacitive, and the projected capacitive type can be divided into self-capacitance and mutual capacitance. For self-capacitance touch structures, due to the accuracy of their touch sensing and high signal-to-noise ratio, they are favored by major panel manufacturers.
  • the self-capacitive touch structure utilizes the principle of self-capacitance to realize the detection of the finger touch position, specifically: setting a plurality of touch sensing electrodes in the touch structure, and the capacitance sensed by each touch sensing electrode when the human body does not touch the screen For a fixed value, when the human body touches the screen, the capacitance sensed by the touch sensing electrode corresponding to the touch position is affected by the human body, and the touch detection chip detects the change of the capacitance value of each touch sensing electrode during the touch time period. The touch position can be judged.
  • FIG. 1 is a schematic structural view of a conventional array substrate having a touch screen structure.
  • the array substrate includes a glass substrate 1 , a thin film transistor 2 arrayed on the glass substrate 1 , a planarization layer 3 overlying the thin film transistor 2 , and a plurality of layers formed on the planarization layer 3 .
  • the touch sensing electrode 4 (only one of which is exemplarily shown in FIG.
  • connection trace 6 is connected to the touch sensing electrode 4 through a via hole disposed in the insulating layer 5 for connecting the touch sensing electrode 4 to the external touch detecting chip; the pixel electrode 8 is disposed through the insulating layer.
  • Layer 7, insulation The vias in the layer 5 and the planarization layer 3 are electrically connected to the thin film transistor 2. As shown in FIG.
  • the plurality of touch sensing electrodes 4 are distributed in an array, and each of the touch sensing electrodes 4 needs to be connected to the touch detecting chip 9 through a separate connecting wire 6 .
  • each of the connection traces 6 is not connected to the front touch sensing electrodes before being connected to the corresponding touch sensing electrodes 4, and is connected to the corresponding touch sensing electrodes 4, and then connected. Trace 6 will not continue to be connected to the rear touch sensing electrodes.
  • the plurality of touch sensing electrodes 4 are also multiplexed with the common electrodes. Therefore, the plurality of touch sensing electrodes 4 transmit the common voltage (Vcom) and the touch signals in a time-sharing manner during the display time of one frame.
  • the touch sensing electrode 4 and the connection trace 6 are disposed in different layers, and the insulating layer 5 is disposed therebetween. Therefore, the touch sensing electrode 4 and the connection trace 6 form a parasitic capacitance, which is parasitic.
  • the capacitance is coupled to a useful capacitive signal generated by a finger touch to create a noise disturbance that causes the signal to noise ratio (SNR) of the touch screen to drop.
  • SNR signal to noise ratio
  • Reducing the parasitic capacitance formed between the touch sensing electrode 4 and the connection trace 6 is one of the means for improving the signal-to-noise ratio of the touch screen.
  • One existing method is to increase the touch sensing electrode 4 and the connection trace 6. The thickness of the insulating layer 5 is reduced to reduce the parasitic capacitance formed by the touch sensing electrode 4 and the connection trace 6.
  • the positional relationship between the touch sensing electrode 4, the connection trace 6 and the pixel electrode 8 is a bottom-up structure in sequence, since the touch sensing electrode 4 is also multiplexed.
  • a common capacitor, a storage capacitor (C st ) is formed between the touch sensing electrode 4 and the pixel electrode 8. If the thickness of the insulating layer 5 is increased as described above to reduce the parasitic capacitance formed by the touch sensing electrode 4 and the connecting trace 6, the storage capacitance formed between the touch sensing electrode 4 and the pixel electrode 8 is correspondingly If the reduction of the storage capacitor is caused, the charge of the pixel cannot be maintained.
  • the direct effect is that the pixel cannot be charged to the set gray scale, and the liquid crystal display cannot display the content correctly. Therefore, as shown in the conventional array substrate with a touch screen structure, the thickness of the insulating layer 5 between the touch sensing electrode 4 and the connection trace 6 is increased to reduce the touch sensing electrode 4 and the connecting trace 6 The parasitic capacitance formed is more harmful than good.
  • the present invention provides an in-line touch screen.
  • the parasitic formation formed in the touch screen structure can be reduced without affecting the size of the storage capacitor. Capacitance to improve the signal to noise ratio of the touch screen.
  • An in-line touch panel includes an array substrate, the array substrate includes: a glass substrate, a thin film transistor disposed on the glass substrate, a planarization layer overlying the thin film transistor, and a shape a connection line formed on the planarization layer, a first insulation layer disposed on the connection trace, a touch sensing electrode formed on the first insulation layer, and a touch a second insulating layer on the sensing electrode and a pixel electrode formed on the second insulating layer; wherein the connection trace is electrically connected to the first via via disposed in the first insulating layer a touch sensing electrode, the pixel electrode being electrically connected to the thin film transistor through a second via disposed in the second insulating layer, the first insulating layer, and the planarization layer; wherein the touch sensing electrode Also configured as a common electrode, the touch sensing electrode is configured to transmit a common voltage and a touch signal in a time-sharing manner within a display time of one frame.
  • connection trace is a metal material
  • the material of the touch sensing electrode and the pixel electrode is ITO.
  • the material of the first insulating layer and the second insulating layer is SiN x , SiO x or SiN x O y .
  • the thin film transistor comprises a source, a drain, a gate and an active layer, the active layer is connected to the glass substrate, and the source and the drain are disposed in the same layer and are located in the active layer Upper, the gate is located above the source and the drain; a third insulating layer is disposed between the source and the drain and the active layer, and the source and the drain are respectively disposed through the A via hole in the third insulating layer is connected to the active layer; and a fourth insulating layer is disposed between the source and the drain and the gate.
  • An ohmic contact layer is further disposed between the active layer and the source and the drain.
  • the material of the third insulating layer and the fourth insulating layer is SiN x , SiO x or SiN x O y .
  • the in-cell touch panel further includes a liquid crystal layer disposed opposite to the array substrate and disposed between the array substrate and the filter substrate.
  • a fifth insulating layer is disposed between the planarization layer and the connection trace, and the material of the fifth insulating layer is SiN x , SiO x or SiN x O y .
  • the method for preparing an in-line touch panel comprising the steps of preparing an array substrate, wherein the preparation process of the array substrate comprises: S10, providing a glass substrate and preparing a thin film transistor array on the glass substrate; S20, having a thin film transistor a planarization layer is prepared on the glass substrate; S30, a connection trace is prepared on the planarization layer; S40, a first insulation layer is prepared on the planarization layer having the connection trace; S50, in the first insulation a first via is formed in the layer corresponding to the connection line; S60, a touch sensing electrode is formed on the first insulating layer, and the touch sensing electrode is electrically connected to the first via Connecting a trace; S70, preparing a second insulating layer on the first insulating layer having the touch sensing electrode, and corresponding to the thin film transistor in the second insulating layer, the first insulating layer, and the planarization layer Positioning a second via hole; S80, preparing a pixel electrode on the second insul
  • a liquid crystal display including a liquid crystal display and a backlight module.
  • the liquid crystal display is disposed opposite to the backlight module, and the backlight module provides a display light source to the liquid crystal display. So that the liquid crystal display displays an image, wherein the liquid crystal display adopts an inline touch screen as described above.
  • the array substrate embedded with the touch screen is provided with a connection trace, a touch sensing electrode and a pixel electrode from bottom to top in order, thereby increasing the touch.
  • the thickness of the first insulating layer between the sensing electrode and the connecting wire is controlled, the relative distance between the touch sensing electrode and the pixel electrode does not change, and the storage capacitance formed between the touch sensing electrode and the pixel electrode does not change.
  • the thickness of the insulating layer between the touch sensing electrode and the connecting trace can be increased to reduce the parasitic capacitance formed by the touch sensing electrode and the connecting trace. Achieve the purpose of improving the signal to noise ratio of the touch screen.
  • FIG. 1 is a schematic structural view of a conventional array substrate having a touch screen structure
  • FIG. 2 is a schematic view showing the distribution of touch sensing electrodes in the touch screen structure of FIG. 1;
  • FIG. 3 is a schematic structural diagram of an embedded touch screen according to an embodiment of the present invention.
  • FIG. 4 is a schematic structural diagram of an array substrate with a touch screen structure according to an embodiment of the present invention.
  • FIG. 5 is a schematic structural diagram of a liquid crystal display according to an embodiment of the present invention.
  • the in-cell touch panel includes an array substrate 30 and a filter substrate 40 disposed opposite to each other, and is disposed on the array substrate 30 and the filter substrate 40.
  • the liquid crystal layer 50 is interposed.
  • the touch screen structure is embedded in the array substrate 30.
  • the array substrate 30 includes a glass substrate 11 and an array of thin film transistors 12 sequentially formed on the glass substrate 11, a planarization layer 13, a connection trace 14, a first insulating layer 15, and a touch sensing electrode. 16.
  • a plurality of thin film transistors 12 are disposed in an array of the glass substrate 11, and a planarization layer 13 is overlaid on the thin film transistor 12, and the connection traces 14 are formed.
  • the first insulating layer 15 is disposed on the connecting trace 14
  • the touch sensing electrode 16 is formed on the first insulating layer 15
  • the second insulating layer 17 is disposed on the grounding layer 13 .
  • the pixel electrode 18 is formed on the second insulating layer 17 on the touch sensing electrode 16.
  • the first insulating layer 15 is provided with a first via 19, and the connecting trace 14 is electrically connected to the touch sensing electrode 16 through the first via 19 for sensing touch.
  • the electrode 16 is connected to an external touch detection chip (not shown in the drawing).
  • a second via hole 20 is formed in the second insulating layer 17 , the first insulating layer 15 , and the planarization layer 13 corresponding to the thin film transistor 12 , and the pixel electrode 18 is electrically disposed through the second via hole 20 . It is connected to the thin film transistor 12 (connected to the source or the drain of the thin film transistor 12).
  • the number of the touch sensing electrodes 16 is multiple, and the plurality of touch sensing electrodes 16 are arranged in an array to form a self-capacitive touch structure.
  • the plurality of touch sensing electrodes 16 are also configured as a common electrode.
  • the touch sensing electrodes 16 are used to transmit the common voltage and the touch signals in a time-sharing manner during a display time of one frame.
  • the material of the touch sensing electrode 16 and the pixel electrode 18 is made of a transparent conductive material, for example, ITO can be selected.
  • the material of the planarization layer 13 is an organic material, and the material of the connection trace 14 is a metal material, which may be composed of a plurality of metal materials, for example, may be a three-layer metal material of Mo/Al/Mo.
  • the touch screen structure includes the connection traces 14 and the touch sensing electrodes 16 sequentially formed on the planarization layer 13, the connection traces 14, the touch sensing electrodes 16 (common electrodes), and the pixel electrodes 18
  • the positional relationship is in a bottom-up relationship.
  • the thickness of the first insulating layer 15 between the touch sensing electrode 16 and the connection trace 14 is increased, the relative distance between the touch sensing electrode 16 and the pixel electrode 18 is not
  • the storage capacitance (C st ) formed between the touch sensing electrode 16 and the pixel electrode 18 does not change.
  • the thickness of the insulating layer between the touch sensing electrode 16 and the connecting trace 14 can be increased by the thickness of the insulating layer (the thickness can be determined according to actual needs, and the invention is not specifically limited).
  • the small touch sensing electrode 16 and the parasitic capacitance formed by the connection trace 14 achieve the purpose of improving the signal to noise ratio of the touch screen.
  • the thin film transistor 12 includes a source 121, a drain 122, a gate 123, and an active layer 124.
  • the active layer 124 is connected to the glass substrate 11, the source.
  • the pole 121 and the drain 122 are disposed in the same layer and above the active layer 124, and the gate 123 is located above the source 121 and the drain 122.
  • a third insulating layer 21 is disposed between the source 121 and the drain 122 and the active layer 124, and the source 121 and the drain 122 respectively pass through vias disposed in the third insulating layer 21
  • a fourth insulating layer 22 is disposed between the source 121 and the drain 122 and the gate 123.
  • the pixel electrode 18 is electrically connected to the drain 122 of the thin film transistor 12 through the second via 20 .
  • the active layer 124 and the source 121 and the drain 122 are further disposed between
  • the specific material of the ohmic contact layer 125 and the ohmic contact layer 125 is N+Si.
  • the materials of the first insulating layer 15 and the second insulating layer 17 may be selected as SiN x , SiO x or SiN x O y ; the third insulating layer 21 and the fourth insulating layer
  • the material of 22 can also be selected as SiN x , SiO x or SiN x O y .
  • the material of the planarization layer 13 is an organic material, when the connection traces 14 are directly prepared in the planarization layer 13, there may be a problem that the adhesion between the connection traces 14 and the planarization layer 13 is poor. Therefore, in the present embodiment, first, the fifth insulating layer 23 is disposed on the planarization layer 13, and then the connection traces 14 are formed on the fifth insulating layer 23.
  • the material of the fifth insulating layer 23 is SiN x , SiO x or SiN x O y .
  • the preparation process of the array substrate 30 mainly includes the steps of:
  • a glass substrate 11 is provided and an array of thin film transistors 12 is prepared on the glass substrate 11.
  • a planarization layer 13 is formed on the glass substrate 11 having the thin film transistor 12.
  • connection trace 14 is prepared on the planarization layer 13. Specifically, first, a thin film layer connecting the traces 14 is formed on the planarization layer 13 by a deposition process, and then a patterned connection trace 14 is obtained by a photolithography process.
  • the first insulating layer 15 covers the connection traces 14 and the planarization layer 13.
  • the first via 19 is obtained mainly by a photolithography process.
  • a touch sensing electrode 16 is formed on the first insulating layer 15, and the touch sensing electrode 16 is electrically connected to the connecting trace 14 through the first via hole 19.
  • the first step is to form a thin film layer of the touch sensing electrode 16 on the first insulating layer 15 by a deposition process, and then obtain a patterned touch sensing electrode 16 by a photolithography process. More specifically, since the touch sensing electrode 16 is also configured as a common electrode, the preparation process of this step can also be understood by first forming a common electrode layer film on the first insulating layer 15 by a deposition process, and then passing the light.
  • the common electrode layer film is divided into a plurality of patterned touch sensing electrodes 16, so that the plurality of touch sensing electrodes 16 located in the same structural layer can serve as the common electrode of the display, and the display time of one frame of the screen
  • the touch sensing electrode 16 is used to transmit a common voltage (Vcom) and a touch signal in a time sharing manner.
  • Vcom common voltage
  • the second via 20 is opened at the position of 12.
  • the second insulating layer 17 covers the touch sensing electrode 16 and the first insulating layer 15, and is prepared by a photolithography process to obtain the second via hole 20.
  • a pixel electrode 18 is prepared on the second insulating layer 17, and the pixel electrode 18 is electrically connected to the thin film transistor 12 through the second via 20. Specifically, first, a thin film layer of the pixel electrode 18 is formed on the second insulating layer 17 by a deposition process, and then the patterned pixel electrode 18 is obtained by a photolithography process.
  • the present embodiment further provides a liquid crystal display including the embedded touch screen 100 and the backlight module 200 , and the embedded touch screen 100 is disposed opposite to the backlight module 200 , and the backlight module 200 is disposed.
  • a display light source is provided to the inline touch screen 100 to cause the inline touch screen 100 to display an image.
  • the array substrate embedded with the touch screen is provided with a connection trace, a touch sensing electrode and a pixel electrode from bottom to top, thereby increasing touch sensing.
  • the thickness of the first insulating layer between the electrode and the connecting line is changed, the relative distance between the touch sensing electrode and the pixel electrode does not change, and the storage capacitance formed between the touch sensing electrode and the pixel electrode does not change.
  • the thickness of the insulating layer between the touch sensing electrode and the connecting trace can be increased to reduce the parasitic capacitance formed by the touch sensing electrode and the connecting trace. Achieve the purpose of improving the signal to noise ratio of the touch screen.

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Abstract

一种内嵌触摸屏及其制备方法，以及包含该内嵌触摸屏的液晶显示器，所述内嵌触摸屏包括阵列基板（30）。所述阵列基板（30）包括：玻璃基板（11）、阵列设置于所述玻璃基板（11）上的薄膜晶体管（12）、覆设于所述薄膜晶体管（12）上的平坦化层（13）、形成于所述平坦化层（13）上的连接走线（14）、覆设于所述连接走线（14）上的第一绝缘层（15）、形成于所述第一绝缘层（15）上的触控感应电极（16）、覆设于所述触控感应电极（16）上的第二绝缘层（17）以及形成于所述第二绝缘层（17）上的像素电极（18）；其中，所述连接走线（14）通过设置于所述第一绝缘层（15）中的第一过孔（19）电性连接到所述触控感应电极（16），所述像素电极（18）通过设置于所述第二绝缘层（17）、第一绝缘层（15）以及平坦化层（13）中的第二过孔（20）电性连接到所述薄膜晶体管（12）；其中，所述触控感应电极（16）还被配置为公共电极，在一帧画面的显示时间内，所述触控感应电极（16）用于分时地传递公共电压和触控信号。

Description

内嵌触摸屏及其制备方法、液晶显示器 技术领域
本发明涉及触控技术领域,尤其涉及一种内嵌触摸屏及其制备方法，还涉及包含该内嵌触摸屏的液晶显示器。
背景技术
触摸显示屏作为一种输入媒介,是目前最简单、方便的一种人机交互方式，因此触摸显示屏越来越多地应用到各种电子产品中。基于不同的工作原理以及传输信息的介质，触摸屏产品可以分为四种：红外线触摸屏、电容式触摸屏、电阻触摸屏和表面声波触摸屏；其中电容式触摸屏由于具有寿命长、透光率高、可以支持多点触控等优点成为目前主流的触摸屏技术。电容式触摸屏包括表面电容式和投射电容式，其中投射电容式又可以分为自电容式和互电容式。对于自电容触摸结构，由于其触控感应的准确度和信噪比比较高，因而受到了各大面板厂家青睐。
目前，自电容式触摸结构利用自电容的原理实现检测手指触摸位置，具体为：在触摸结构中设置多个触控感应电极，当人体未触碰屏幕时，各触控感应电极所感知的电容为一固定值，当人体触碰屏幕时，触碰位置对应的触控感应电极所感知的电容受人体影响，触控侦测芯片在触控时间段通过检测各触控感应电极的电容值变化可以判断出触控位置。
对于自电容式内嵌(in-cell)触摸屏，通常是将触摸屏结构中的触控感应电极和金属连接线直接设置在阵列基板或滤光基板上。图1是现有的一种具有触摸屏结构的阵列基板的结构示意图。如图1所示，该阵列基板包括：玻璃基板1、阵列设置于玻璃基板1上的薄膜晶体管2、覆设于薄膜晶体管2上的平坦化层3、形成于平坦化层3上的多个触控感应电极4(图1中仅示例性示出了其中的一个)、覆设于触控感应电极4上的绝缘层5、形成于绝缘层5上的连接走线6、覆设于连接走线6上的另一绝缘层7以及形成于绝缘层7上的像素电极8。其中，连接走线6通过设置在绝缘层5中的过孔连接到触控感应电极4，用于将触控感应电极4连接至外部的触控侦测芯片；像素电极8则通过设置在绝缘层7、绝缘 层5以及平坦化层3中的过孔电性连接到薄膜晶体管2。其中，如图2所示，多个触控感应电极4呈阵列分布，每一个触控感应电极4需要通过单独的连接走线6连接到触控侦测芯片9。具体地，对于一列触控感应电极4，每根连接走线6连接到相应的触控感应电极4前均不与前面的触控感应电极相连，连接到相应的触控感应电极4后该连接走线6将不与后面的触控感应电极继续连接。其中，多个触控感应电极4还被复用未公共电极，因此在一帧画面的显示时间内，所述多个触控感应电极4分时地传递公共电压(Vcom)和触控信号。
如上触摸屏结构中，触控感应电极4和连接走线6为异层设置，并且两者之间设置有绝缘层5，因此触控感应电极4和连接走线6会形成寄生电容，这一寄生电容会与手指触摸产生的有用的电容信号耦合，形成噪声干扰，引起触摸屏的信噪比(SNR)下降。减小触控感应电极4和连接走线6之间形成的寄生电容是提高触摸屏的信噪比的手段之一，现有的一种方法是通过增加触控感应电极4和连接走线6之间的绝缘层5的厚度，以减小触控感应电极4和连接走线6形成的寄生电容。
然而，参阅图1，如上结构的阵列基板中，触控感应电极4、连接走线6和像素电极8的位置关系是依次自下而上的结构，由于触控感应电极4还被复用未公共电极，触控感应电极4与像素电极8之间会形成存储电容(Cst)。若按照如上的方法增加绝缘层5的厚度达到减小触控感应电极4和连接走线6形成的寄生电容的目的，则触控感应电极4与像素电极8之间形成的存储电容也相应地减小，存储电容的减小会导致像素的电荷无法保持，直接的影响就是像素无法充电到设定的灰阶，液晶显示器无法正确显示画面内容。因此，如图1的现有的具有触摸屏结构的阵列基板，通过增加触控感应电极4和连接走线6之间的绝缘层5的厚度，以减小触控感应电极4和连接走线6形成的寄生电容是弊大于利的。
发明内容
鉴于现有技术存在的不足，本发明提供了一种内嵌触摸屏，通过对设置于阵列基板中的触摸屏结构进行改进，在不影响存储电容大小的前提下，可以减小触摸屏结构中形成的寄生电容，提高触摸屏的信噪比。
为了实现上述目的，本发明采用了如下的技术方案：
一种内嵌触摸屏，包括阵列基板，所述阵列基板包括：玻璃基板、阵列设置于所述玻璃基板上的薄膜晶体管、覆设于所述薄膜晶体管上的平坦化层、形 成于所述平坦化层上的连接走线、覆设于所述连接走线上的第一绝缘层、形成于所述第一绝缘层上的触控感应电极、覆设于所述触控感应电极上的第二绝缘层以及形成于所述第二绝缘层上的像素电极；其中，所述连接走线通过设置于所述第一绝缘层中的第一过孔电性连接到所述触控感应电极，所述像素电极通过设置于所述第二绝缘层、第一绝缘层以及平坦化层中的第二过孔电性连接到所述薄膜晶体管；其中，所述触控感应电极还被配置为公共电极，在一帧画面的显示时间内，所述触控感应电极用于分时地传递公共电压和触控信号。
其中，所述连接走线的材料为金属材料，所述触控感应电极和所述像素电极的材料均为ITO。
其中，所述第一绝缘层和所述第二绝缘层的材料为SiNx、SiOx或SiNxOy。
其中，所述薄膜晶体管包括源极、漏极、栅极和有源层，所述有源层连接于所述玻璃基板上，所述源极和漏极同层设置且位于所述有源层上方，所述栅极位于所述源极和漏极上方；所述源极和漏极与所述有源层之间设置有第三绝缘层，所述源极和漏极分别通过设置于所述第三绝缘层中的过孔连接到所述有源层；所述源极和漏极与所述栅极之间设置有第四绝缘层。
其中，所述有源层与所述源极、漏极之间还设置有欧姆接触层。
其中，所述第三绝缘层和所述第四绝缘层的材料为SiNx、SiOx或SiNxOy。
其中，该内嵌触摸屏还包括与所述阵列基板相对设置滤光基板以及设置于所述阵列基板和所述滤光基板之间的液晶层。
其中，所述平坦化层与所述连接走线之间还设置有第五绝缘层，所述第五绝缘层的材料为SiNx、SiOx或SiNxOy。
如上提供的内嵌触摸屏的制备方法，包括制备阵列基板的步骤，其中，所述阵列基板的制备工艺包括：S10、提供一玻璃基板并在玻璃基板上制备薄膜晶体管阵列；S20、在具有薄膜晶体管的玻璃基板上制备一平坦化层；S30、在所述平坦化层上制备连接走线；S40、在具有连接走线的平坦化层上制备第一绝缘层；S50、在所述第一绝缘层中对应于所述连接走线的位置开设第一过孔；S60、在所述第一绝缘层上形成触控感应电极，所述触控感应电极通过所述第一过孔电性连接到所述连接走线；S70、在具有触控感应电极的第一绝缘层上制备第二绝缘层，并在所述第二绝缘层、第一绝缘层以及平坦化层中对应于所述薄膜晶体管的位置开设第二过孔；S80、在所述第二绝缘层上制备像素电极，所述像素 电极通过所述第二过孔电性连接到所述薄膜晶体管。
本发明的另一方面是提供一种液晶显示器，包括液晶显示屏及背光模组，所述液晶显示屏与所述背光模组相对设置，所述背光模组提供显示光源给所述液晶显示屏，以使所述液晶显示屏显示影像，其中，所述液晶显示屏采用如上所述的内嵌触摸屏。
相比于现有技术，本发明实施例中提供的内嵌触摸屏，内嵌触摸屏的阵列基板中自下而上依次设置有连接走线、触控感应电极和像素电极，由此，在增加触控感应电极和连接走线之间的第一绝缘层的厚度时，触控感应电极和像素电极之间的相对距离不发生改变，触控感应电极和像素电极之间形成的存储电容不发生变化。基于以上，本发明实施例中提供的内嵌触摸屏中，可以通过增加触控感应电极和连接走线之间的绝缘层的厚度，以减小触控感应电极和连接走线形成的寄生电容，达到提高触摸屏的信噪比的目的。
附图说明
图1是现有的一种具有触摸屏结构的阵列基板的结构示意图；
图2是如图1的触摸屏结构中触控感应电极的分布示意图；
图3是本发明实施例提供的内嵌触摸屏的结构示意图；
图4是本发明实施例提供的具有触摸屏结构的阵列基板的结构示意图；
图5是本发明实施例提供的液晶显示器的结构示意图。
具体实施方式
为使本发明的目的、技术方案和优点更加清楚，下面结合附图对本发明的具体实施方式进行详细说明。这些优选实施方式的示例在附图中进行了例示。附图中所示和根据附图描述的本发明的实施方式仅仅是示例性的，并且本发明并不限于这些实施方式。
在此，还需要说明的是，为了避免因不必要的细节而模糊了本发明，在附图中仅仅示出了与根据本发明的方案密切相关的结构和/或处理步骤，而省略了与本发明关系不大的其他细节。
本实施例首先提供了一种内嵌触摸屏。如图3所示，该内嵌触摸屏包括相对设置的阵列基板30和滤光基板40以及设置于阵列基板30和滤光基板40之 间的液晶层50。其中，触摸屏结构内嵌于阵列基板30中。
具体地，如图4所示，阵列基板30包括玻璃基板11以及依次形成在玻璃基板11上的薄膜晶体管12阵列、平坦化层13、连接走线14、第一绝缘层15、触控感应电极16、第二绝缘层17以及像素电极18。具体地，首先是在玻璃基板11阵列设置多个薄膜晶体管12(图4中仅示例性示出了其中的一个)，平坦化层13覆设于所述薄膜晶体管12上，连接走线14形成于所述平坦化层13上，第一绝缘层15覆设于所述连接走线14上，触控感应电极16形成于所述第一绝缘层15上，第二绝缘层17覆设于所述触控感应电极16上，像素电极18形成于所述第二绝缘层17上。
其中，所述第一绝缘层15中设置有第一过孔19，所述连接走线14通过所述第一过孔19电性连接到所述触控感应电极16，用于将触控感应电极16连接到外部的触控侦测芯片(附图中未示出)。所述第二绝缘层17、第一绝缘层15以及平坦化层13中对应于薄膜晶体管12的位置开设有第二过孔20，所述像素电极18通过设置于所述第二过孔20电性连接到所述薄膜晶体管12(连接到薄膜晶体管12的源极或漏极)。
所述触控感应电极16的数量是多个的，并且多个触控感应电极16呈阵列排布，形成自容式触摸结构。所述多个触控感应电极16还被配置为公共电极，在一帧画面的显示时间内，所述触控感应电极16用于分时地传递公共电压和触控信号。
其中，所述触控感应电极16和所述像素电极18的材料采用透明导电材料，例如可以选择为ITO。所述平坦化层13的材料为有机材料，所述连接走线14的材料为金属材料，其可以是多层金属材料组成，例如可以是依次为Mo/Al/Mo三层金属材料。
如上结构的阵列基板中，其中的触摸屏结构包括依次形成在平坦化层13上的连接走线14和触控感应电极16，连接走线14、触控感应电极16(公共电极)和像素电极18的位置关系呈自下而上的关系，在增加触控感应电极16和连接走线14之间的第一绝缘层15的厚度时，触控感应电极16和像素电极18之间的相对距离不发生改变，触控感应电极16和像素电极18之间形成的存储电容(Cst)不发生变化。因此，如上结构内嵌触摸屏中，可以通过增加触控感应电极16和连接走线14之间的绝缘层的厚度(厚度增加的大小可以根据实际需要确定，本发明不做具体限定)，以减小触控感应电极16和连接走线14形成的寄 生电容，达到提高触摸屏的信噪比的目的。
其中，如图4所示的，所述薄膜晶体管12包括源极121、漏极122、栅极123和有源层124，所述有源层124连接于所述玻璃基板11上，所述源极121和漏极122同层设置且位于所述有源层124上方，所述栅极123位于所述源极121和漏极122上方。所述源极121和漏极122与所述有源层124之间设置有第三绝缘层21，所述源极121和漏极122分别通过设置于所述第三绝缘层21中的过孔连接到所述有源层124，所述源极121和漏极122与所述栅极123之间设置有第四绝缘层22。在本实施例中，像素电极18通过第二过孔20电性连接到薄膜晶体管12的漏极122。
进一步地，为了使所述源极121和漏极122与所述有源层124之间具有良好的电接触，所述有源层124与所述源极121、漏极122之间还设置有欧姆接触层125，欧姆接触层125的具体材料为N+Si。
进一步地，在本实施例中，所述第一绝缘层15和所述第二绝缘层17的材料可以选择为SiNx、SiOx或SiNxOy；第三绝缘层21和第四绝缘层22的材料也是可以选择为SiNx、SiOx或SiNxOy。
进一步地，由于平坦化层13的材料为有机材料，在平坦化层13直接制备连接走线14时，可能存在连接走线14与平坦化层13之间附着力不佳的问题。因此，在本实施例中，首先所述平坦化层13上设置第五绝缘层23，然后再将连接走线14形成在第五绝缘层23上。其中，所述第五绝缘层23的材料为SiNx、SiOx或SiNxOy。
更具体地，阵列基板30的制备工艺主要包括步骤：
S10、提供一玻璃基板11并在玻璃基板11上制备薄膜晶体管12阵列。
S20、在具有薄膜晶体管12的玻璃基板11上制备一平坦化层13。
S30、在所述平坦化层13上制备连接走线14。具体地，首先是通过沉积工艺在平坦化层13上形成连接走线14的薄膜层，然后再通过光刻工艺获得图形化的连接走线14。
S40、在具有连接走线14的平坦化层13上制备第一绝缘层15。其中，第一绝缘层15覆盖连接走线14和平坦化层13。
S50、在所述第一绝缘层15中对应于所述连接走线14的位置开设第一过孔 19。其中，主要通过光刻工艺制备获得第一过孔19。
S60、在所述第一绝缘层15上形成触控感应电极16，所述触控感应电极16通过所述第一过孔19电性连接到所述连接走线14。其中，首先是通过沉积工艺在第一绝缘层15上形成触控感应电极16的薄膜层，然后再通过光刻工艺获得图形化的触控感应电极16。更具体地，由于触控感应电极16还被配置为公共电极，因此该步骤的制备工艺中也可以这样理解：首先通过沉积工艺在第一绝缘层15上形成公共电极层薄膜，然后再通过光刻工艺，将公共电极层薄膜分割形成多个图形化的触控感应电极16，因此，位于同一结构层中的多个触控感应电极16可以作为显示的公共电极，在一帧画面的显示时间内，触控感应电极16用于分时地传递公共电压(Vcom)和触控信号。
S70、在具有触控感应电极16的第一绝缘层15上制备第二绝缘层17，并在所述第二绝缘层17、第一绝缘层15以及平坦化层13中对应于所述薄膜晶体管12的位置开设第二过孔20。第二绝缘层17覆盖触控感应电极16和第一绝缘层15，并且通过光刻工艺制备获得第二过孔20。
S80、在所述第二绝缘层17上制备像素电极18，所述像素电极18通过所述第二过孔20电性连接到所述薄膜晶体管12。具体地，首先是通过沉积工艺在第二绝缘层17上形成像素电极18的薄膜层，然后再通过光刻工艺获得图形化的像素电极18。
如图5中，本实施例还提供了一种液晶显示器，其包括如上所述的内嵌触摸屏100以及背光模组200，内嵌触摸屏100与背光模组200相对设置，所述背光模组200提供显示光源给所述内嵌触摸屏100，以使所述内嵌触摸屏100显示影像。
综上所述，本发明实施例中提供的内嵌触摸屏，内嵌触摸屏的阵列基板中自下而上依次设置有连接走线、触控感应电极和像素电极，由此，在增加触控感应电极和连接走线之间的第一绝缘层的厚度时，触控感应电极和像素电极之间的相对距离不发生改变，触控感应电极和像素电极之间形成的存储电容不发生变化。基于以上，本发明实施例中提供的内嵌触摸屏中，可以通过增加触控感应电极和连接走线之间的绝缘层的厚度，以减小触控感应电极和连接走线形成的寄生电容，达到提高触摸屏的信噪比的目的。
需要说明的是，在本文中，诸如第一和第二等之类的关系术语仅仅用来将 一个实体或者操作与另一个实体或操作区分开来，而不一定要求或者暗示这些实体或操作之间存在任何这种实际的关系或者顺序。而且，术语“包括”、“包含”或者其任何其他变体意在涵盖非排他性的包含，从而使得包括一系列要素的过程、方法、物品或者设备不仅包括那些要素，而且还包括没有明确列出的其他要素，或者是还包括为这种过程、方法、物品或者设备所固有的要素。在没有更多限制的情况下，由语句“包括一个……”限定的要素，并不排除在包括所述要素的过程、方法、物品或者设备中还存在另外的相同要素。
以上所述仅是本申请的具体实施方式，应当指出，对于本技术领域的普通技术人员来说，在不脱离本申请原理的前提下，还可以做出若干改进和润饰，这些改进和润饰也应视为本申请的保护范围。

Claims (20)

  1. 一种内嵌触摸屏，包括阵列基板，其中，所述阵列基板包括：玻璃基板、阵列设置于所述玻璃基板上的薄膜晶体管、覆设于所述薄膜晶体管上的平坦化层、形成于所述平坦化层上的连接走线、覆设于所述连接走线上的第一绝缘层、形成于所述第一绝缘层上的触控感应电极、覆设于所述触控感应电极上的第二绝缘层以及形成于所述第二绝缘层上的像素电极；其中，所述连接走线通过设置于所述第一绝缘层中的第一过孔电性连接到所述触控感应电极，所述像素电极通过设置于所述第二绝缘层、第一绝缘层以及平坦化层中的第二过孔电性连接到所述薄膜晶体管；其中，所述触控感应电极还被配置为公共电极，在一帧画面的显示时间内，所述触控感应电极用于分时地传递公共电压和触控信号。
  2. 根据权利要求1所述的内嵌触摸屏，其中，所述连接走线的材料为金属材料，所述触控感应电极和所述像素电极的材料均为ITO。
  3. 根据权利要求1所述的内嵌触摸屏，其中，所述第一绝缘层和所述第二绝缘层的材料为SiNx、SiOx或SiNxOy。
  4. 根据权利要求1所述的内嵌触摸屏，其中，所述薄膜晶体管包括源极、漏极、栅极和有源层，所述有源层连接于所述玻璃基板上，所述源极和漏极同层设置且位于所述有源层上方，所述栅极位于所述源极和漏极上方；所述源极和漏极与所述有源层之间设置有第三绝缘层，所述源极和漏极分别通过设置于所述第三绝缘层中的过孔连接到所述有源层；所述源极和漏极与所述栅极之间设置有第四绝缘层。
  5. 根据权利要求4所述的内嵌触摸屏，其中，所述有源层与所述源极、漏极之间还设置有欧姆接触层。
  6. 根据权利要求4所述的内嵌触摸屏，其中，所述第三绝缘层和所述第四绝缘层的材料为SiNx、SiOx或SiNxOy。
  7. 根据权利要求1所述的内嵌触摸屏，其中，该内嵌触摸屏还包括与所述阵列基板相对设置滤光基板以及设置于所述阵列基板和所述滤光基板之间的液晶层。
  8. 根据权利要求1所述的内嵌触摸屏，其中，所述平坦化层与所述连接走线之间还设置有第五绝缘层，所述第五绝缘层的材料为SiNx、SiOx或SiNxOy。
  9. 一种内嵌触摸屏的制备方法，包括制备阵列基板的步骤，其中，所述阵列基板的制备工艺包括：
    S10、提供一玻璃基板并在玻璃基板上制备薄膜晶体管阵列；
    S20、在具有薄膜晶体管的玻璃基板上制备一平坦化层；
    S30、在所述平坦化层上制备连接走线；
    S40、在具有连接走线的平坦化层上制备第一绝缘层；
    S50、在所述第一绝缘层中对应于所述连接走线的位置开设第一过孔；
    S60、在所述第一绝缘层上形成触控感应电极，所述触控感应电极通过所述第一过孔电性连接到所述连接走线；
    S70、在具有触控感应电极的第一绝缘层上制备第二绝缘层，并在所述第二绝缘层、第一绝缘层以及平坦化层中对应于所述薄膜晶体管的位置开设第二过孔；
    S80、在所述第二绝缘层上制备像素电极，所述像素电极通过所述第二过孔电性连接到所述薄膜晶体管。
  10. 根据权利要求9所述的内嵌触摸屏的制备方法，其中，所述连接走线的材料为金属材料，所述触控感应电极和所述像素电极的材料均为ITO。
  11. 根据权利要求9所述的内嵌触摸屏的制备方法，其中，所述第一绝缘层和所述第二绝缘层的材料为SiNx、SiOx或SiNxOy。
  12. 根据权利要求9所述的内嵌触摸屏的制备方法，其中，所述平坦化层与所述连接走线之间还制备有第五绝缘层，所述第五绝缘层的材料为SiNx、SiOx或SiNxOy。
  13. 一种液晶显示器，包括液晶显示屏及背光模组，所述液晶显示屏与所述背光模组相对设置，所述背光模组提供显示光源给所述液晶显示屏，以使所述液晶显示屏显示影像，所述液晶显示屏为内嵌触摸屏；
    所述内嵌触摸屏包括阵列基板，其中，所述阵列基板包括：玻璃基板、阵列设置于所述玻璃基板上的薄膜晶体管、覆设于所述薄膜晶体管上的平坦化层、形成于所述平坦化层上的连接走线、覆设于所述连接走线上的第一绝缘层、形成于所述第一绝缘层上的触控感应电极、覆设于所述触控感应电极上的第二绝 缘层以及形成于所述第二绝缘层上的像素电极；其中，所述连接走线通过设置于所述第一绝缘层中的第一过孔电性连接到所述触控感应电极，所述像素电极通过设置于所述第二绝缘层、第一绝缘层以及平坦化层中的第二过孔电性连接到所述薄膜晶体管；其中，所述触控感应电极还被配置为公共电极，在一帧画面的显示时间内，所述触控感应电极用于分时地传递公共电压和触控信号。
  14. 根据权利要求13所述的液晶显示器，其中，所述连接走线的材料为金属材料，所述触控感应电极和所述像素电极的材料均为ITO。
  15. 根据权利要求13所述的液晶显示器，其中，所述第一绝缘层和所述第二绝缘层的材料为SiNx、SiOx或SiNxOy。
  16. 根据权利要求13所述的液晶显示器，其中，所述薄膜晶体管包括源极、漏极、栅极和有源层，所述有源层连接于所述玻璃基板上，所述源极和漏极同层设置且位于所述有源层上方，所述栅极位于所述源极和漏极上方；所述源极和漏极与所述有源层之间设置有第三绝缘层，所述源极和漏极分别通过设置于所述第三绝缘层中的过孔连接到所述有源层；所述源极和漏极与所述栅极之间设置有第四绝缘层。
  17. 根据权利要求16所述的液晶显示器，其中，所述有源层与所述源极、漏极之间还设置有欧姆接触层。
  18. 根据权利要求16所述的液晶显示器，其中，所述第三绝缘层和所述第四绝缘层的材料为SiNx、SiOx或SiNxOy。
  19. 根据权利要求13所述的液晶显示器，其中，该内嵌触摸屏还包括与所述阵列基板相对设置滤光基板以及设置于所述阵列基板和所述滤光基板之间的液晶层。
  20. 根据权利要求13所述的液晶显示器，其中，所述平坦化层与所述连接走线之间还设置有第五绝缘层，所述第五绝缘层的材料为SiNx、SiOx或SiNxOy。
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