WO2017164090A1 - Composition liquide de gravure et procédé de gravure - Google Patents

Composition liquide de gravure et procédé de gravure Download PDF

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Publication number
WO2017164090A1
WO2017164090A1 PCT/JP2017/010805 JP2017010805W WO2017164090A1 WO 2017164090 A1 WO2017164090 A1 WO 2017164090A1 JP 2017010805 W JP2017010805 W JP 2017010805W WO 2017164090 A1 WO2017164090 A1 WO 2017164090A1
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Prior art keywords
etching
mass
group
carbon atoms
etching solution
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PCT/JP2017/010805
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English (en)
Japanese (ja)
Inventor
大輔 大宮
珠美 青木
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株式会社Adeka
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Priority claimed from JP2016059470A external-priority patent/JP6662671B2/ja
Priority claimed from JP2016089354A external-priority patent/JP2017199791A/ja
Application filed by 株式会社Adeka filed Critical 株式会社Adeka
Priority to KR1020187026959A priority Critical patent/KR102203444B1/ko
Priority to CN201780019215.XA priority patent/CN108780747B/zh
Publication of WO2017164090A1 publication Critical patent/WO2017164090A1/fr

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C23F1/14—Aqueous compositions
    • C23F1/16—Acidic compositions
    • C23F1/18—Acidic compositions for etching copper or alloys thereof
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
    • H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
    • H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials

Definitions

  • the present invention relates to an etching solution composition and an etching method using the same. More specifically, the present invention relates to an etching solution composition used for etching an indium oxide-based layer and an etching method using the same.
  • Patent Document 1 discloses an etching solution composition for indium-tin oxide (hereinafter also referred to as “ITO”) containing ferric chloride and hydrochloric acid.
  • ITO indium-tin oxide
  • Patent Document 2 discloses an aqueous solution containing cupric ions, organic acids, halogen ions, azoles, and polyalkylene glycols, which are copper or copper alloy etchants. Has been.
  • an etching solution containing hydrogen chloride such as the etching solution composition disclosed in Patent Document 1 is used to collectively etch an ITO layer or a laminate composed of an ITO layer and a copper layer, a substrate or a peripheral member Discoloration of the substrate, roughening of the surface of the base material and the peripheral member, elution of metal components from the surface of the base material and the peripheral member, and poor linearity of the formed thin lines are likely to occur.
  • the present invention has been made to solve the above-mentioned problems, and the problem is that even if it does not contain hydrogen chloride, the narrowing width by etching is small, the linearity is good, and the desired width. It is an object of the present invention to provide an etching solution composition useful for etching an indium oxide-based layer, which can form a thin wire having the following.
  • the subject of the present invention is that even if it does not contain hydrogen chloride, the narrowing width by etching is small, the occurrence of chipping at the upper part of the thin wire is suppressed, and it is possible to form a thin wire having a desired width.
  • Another object of the present invention is to provide an etching solution composition that can suppress thinning of a fine line even if an etching process is continued after completion of etching between the fine lines.
  • the place made into the subject of this invention is providing the etching method using the said etching liquid composition.
  • an etching solution composition for etching an indium oxide-based layer comprising: (A) 0.01 to 15% by mass of hydrogen peroxide; (B) 1 to 40% by mass of sulfuric acid; C) (C-1) 0.01 to 10% by mass of an amide compound represented by the following general formula (1), or (C-2) 0.01 to 20% by mass of an amino acid compound; and an etching solution containing water A composition is provided.
  • R 1 , R 2 , and R 3 are each independently hydrogen, an alkyl group having 1 to 8 carbon atoms, an alkenyl group having 2 to 8 carbon atoms, or the number of carbon atoms. Represents an aryl group having 6 to 8 carbon atoms which may be substituted with 1 or 2 alkyl groups)
  • the amino acid compound is preferably at least one selected from the group consisting of glutamic acid, a compound represented by the following general formula (2), and salts thereof.
  • the amino acid compound is preferably at least one selected from the group consisting of glutamic acid, tyrosine, and phenylalanine.
  • R 1 represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms
  • R 2 represents a hydrogen atom, a hydroxyl group, a halogen atom, or a nitro group
  • A represents the number of carbon atoms. 1 to 4 alkanediyl groups, n represents a number of 1 to 5)
  • an etching method including a step of etching an indium oxide-based layer using the above-described etching solution composition.
  • INDUSTRIAL APPLICABILITY it is useful for etching an indium oxide-based layer that does not contain hydrogen chloride, has a narrow width by etching, has good linearity, and can form a thin line having a desired width.
  • An etching solution composition can be provided.
  • the present invention it is possible to form a thin line having a desired width by reducing the narrowing width by etching, suppressing the occurrence of chipping at the upper part of the thin line, and continuing after the etching between the thin lines is completed. It is possible to provide an etchant composition that can suppress thinning of a thin line even if an etching process is performed.
  • the etching solution composition of the present invention exhibits the above-described effects even when the indium oxide-based layer and the metal-based layer are etched together. For this reason, the etching liquid composition of this invention is suitable as an etching liquid for etching the laminated body which consists of an indium oxide type layer and a metal type layer collectively. Furthermore, according to this invention, the etching method using the said etching liquid composition can be provided.
  • “Etching” in the present specification means a technique of plastic forming or surface processing utilizing a corrosive action such as chemicals.
  • Specific examples of the use of the etching solution composition of the present invention include a removing agent, a surface smoothing agent, a surface roughening agent, a pattern forming agent, and a cleaning solution for a component adhering to a trace amount on a substrate.
  • the etching solution composition of the present invention can be suitably used as a remover because the removal rate of the layer containing indium oxide is fast.
  • it can obtain a pattern with a desired shape such as a rectangle when it is used for forming a finely shaped pattern having a three-dimensional structure, it can also be suitably used as a pattern forming agent.
  • the “indium oxide-based layer” in this specification is not particularly limited as long as it is a layer containing indium oxide.
  • the “indium oxide-based layer” is a general term for a layer made of at least one selected from, for example, indium oxide, indium-tin oxide, and indium-zinc oxide.
  • metal-based layer in the present specification is not particularly limited as long as it is a layer made of metal.
  • Metal-based layer is selected from, for example, metal layers such as copper, nickel, titanium, chromium, silver, molybdenum, platinum, palladium, and metal alloys typified by CuNi, CuNiTi, NiCr, Ag—Pd—Cu, etc. It is a general term for a layer composed of one or more kinds.
  • the metal-based layer is a conductive layer containing 10% by mass or more of copper.
  • the conductive layer containing 10% by mass or more of copper include a conductive layer formed of metallic copper and a conductive layer formed of a copper alloy such as CuNi, CuNiTi, NiCr, and Ag—Pd—Cu.
  • the indium oxide-based layer is a layer containing indium-tin oxide and the metal-based layer is a layer containing 10% by mass or more of copper, the desired fine wire can be obtained with higher accuracy. Can be formed, and the etching rate is also high.
  • the etching solution composition of the present invention contains (A) hydrogen peroxide (hereinafter also referred to as “component (A)”).
  • component (A) hydrogen peroxide
  • the concentration of the component (A) in the etching solution composition is in the range of 0.01 to 15% by mass.
  • concentration of the component (A) is less than 0.01% by mass, the etching rate becomes too slow, and the productivity is significantly reduced.
  • concentration of the component (A) is more than 15% by mass, the etching rate becomes too fast and it becomes difficult to control the etching rate.
  • the concentration of the component (A) is preferably in the range of 0.1 to 12% by mass, more preferably in the range of 1 to 10% by mass.
  • the etching solution composition of the present invention contains (B) sulfuric acid (hereinafter also referred to as “component (B)”).
  • component (B) sulfuric acid
  • the concentration of the component (B) in the etching solution composition is in the range of 1 to 40% by mass. When the concentration of the component (B) is less than 1% by mass, the etching rate becomes too slow and productivity is lowered. On the other hand, when the concentration of the component (B) is more than 40% by mass, the etching rate becomes too high, and it becomes difficult to control the etching rate, or the member or resist around the object to be etched is deteriorated. May end up.
  • the concentration of component (B) is preferably in the range of 5 to 30% by mass, more preferably in the range of 10 to 25% by mass.
  • the etching solution composition of the present invention comprises (C) (C-1) an amide compound represented by the following general formula (1) (hereinafter also referred to as “component (C-1)”), or (C-2) Contains an amino acid compound (hereinafter also referred to as “component (C-2)”).
  • component (C-1) an amide compound represented by the following general formula (1)
  • component (C-2) Contains an amino acid compound (hereinafter also referred to as “component (C-2)”.
  • component (C-1) and (C-2) are collectively referred to as “component (C)”.
  • R 1 , R 2 , and R 3 are each independently hydrogen, an alkyl group having 1 to 8 carbon atoms, an alkenyl group having 2 to 8 carbon atoms, or 1 or Represents an aryl group having 6 to 8 carbon atoms which may be substituted with 2 alkyl groups.
  • alkyl group having 1 to 8 carbon atoms examples include methyl, ethyl, propyl, isopropyl, butyl, sec-butyl, tert-butyl, isobutyl, amyl, isoamyl, tert-amyl, hexyl, 2-hexyl, 3- Examples include hexyl, cyclohexyl, 1-methylcyclohexyl, heptyl, 2-heptyl, 3-heptyl, isoheptyl, tertiary heptyl, n-octyl, isooctyl, tertiary octyl, 2-ethylhexyl and the like.
  • alkenyl group having 2 to 8 carbon atoms examples include vinyl, 1-methylethenyl, 2-methylethenyl, propenyl, butenyl, isobutenyl, pentenyl, hexenyl, heptenyl, octenyl and the like.
  • aryl group having 6 to 8 carbon atoms which may be substituted with an alkyl group having 1 or 2 carbon atoms include, for example, phenyl, 2-methylphenyl, 3-methylphenyl, 4-methylphenyl, 2,3 -Dimethylphenyl, 2,4-dimethylphenyl, 2,5-dimethylphenyl, 2,6-dimethylphenyl, 3,4-dimethylphenyl, 3,5-dimethylphenyl and the like.
  • Preferred specific examples of the amide compound represented by the general formula (1) include formamide, acetamide, propionic acid amide, butyric acid amide, N, N-dimethylformamide, N-methylformamide, N, N-diethylformamide, and metaacrylamide.
  • formamide when formamide is used, the difference (deviation) between the width of the resist pattern and the width of the fine line formed by etching is smaller, and the linearity of the formed fine line is further improved. This is preferable.
  • the concentration of the component (C-1) in the etching solution composition is in the range of 0.01 to 10% by mass.
  • concentration of the component (C-1) is less than 0.01% by mass, the linearity of fine lines formed by etching is lowered.
  • concentration of the component (C) -1 is more than 10% by mass, the etching rate becomes too slow and the productivity is remarkably lowered.
  • concentration of the component (C-1) is preferably in the range of 0.05 to 5% by mass, more preferably in the range of 0.1 to 1% by mass.
  • the amino acid compound may be any compound having at least one amino group and one carboxy group, and a known general amino acid compound can be used.
  • amino acid compounds include glycine, alanine, valine, leucine, serine, phenylalanine, tryptophan, glutamic acid, aspartic acid, lysine, arginine, histidine, tyrosine, methionine, 4-chlorophenylalanine, 4-bromophenylalanine, 4-nitrophenyl.
  • Examples thereof include phenylalanine, 3- (3,4-dihydrophenyl) alanine, ⁇ -methylphenylalanine, and salts thereof.
  • the salt include alkali metal salts and ammonium salts.
  • the amino acid compound it is preferable to use at least one selected from the group consisting of glutamic acid, a compound represented by the following general formula (2), and salts thereof.
  • the fine line width formed by etching the indium oxide-based layer can be made smaller, and a thin line having a desired width can be efficiently formed.
  • R 1 represents a hydrogen atom or a hydrocarbon group having 1 to 4 carbon atoms.
  • the hydrocarbon group having 1 to 4 carbon atoms include a methyl group, an ethyl group, a propyl group, a butyl group, a secondary butyl group, and a tertiary butyl group.
  • R 2 represents a hydrogen atom, a hydroxyl group, a halogen atom, or a nitro group.
  • a halogen atom a fluorine atom, a chlorine atom, a bromine atom, etc. can be mentioned, for example.
  • A represents an alkanediyl group having 1 to 4 carbon atoms.
  • alkanediyl group having 1 to 4 carbon atoms include a methylene group, an ethylene group, and a butylene group.
  • R 1 is a hydrogen atom or a methyl group
  • R 2 is a hydrogen atom or a hydroxyl group
  • A is a methylene group, an indium oxide-based layer
  • the concentration of the component (C-2) in the etching solution composition is in the range of 0.01 to 20% by mass.
  • concentration of the component (C-2) is less than 0.01% by mass, the narrow width of the thin line formed by etching the indium oxide-based layer is increased.
  • concentration of component (C-2) is preferably in the range of 0.05 to 15% by mass, more preferably in the range of 0.1 to 10% by mass.
  • the etching solution composition of the present invention contains water as an essential component other than the components (A), (B), and (C). Further, in the etching solution composition of the present invention, as a component other than (A) component, (B) component, (C) component, and water, a well-known addition is made within a range not inhibiting the effect of the present invention.
  • An agent can be blended.
  • additives include a stabilizer for an etching solution composition, a solubilizing agent for each component, an antifoaming agent, a pH adjusting agent, a specific gravity adjusting agent, a viscosity adjusting agent, a wettability improving agent, a chelating agent, an oxidizing agent, and a reducing agent. And surfactants.
  • concentration of these additives is generally in the range of 0.001 to 50% by mass.
  • chelating agent examples include ethylenediaminetetraacetic acid, diethylenetriaminepentaacetic acid, triethylenetetraminehexaacetic acid, tetraethylenepentaminepentaacetic acid, pentaethylenehexamineoctacetic acid, nitrilotriacetic acid, and alkali metal (preferably sodium) salts thereof.
  • Aminocarboxylic acid-based chelating agents hydroxyethylidene diphosphonic acid, nitrilotrismethylenephosphonic acid, phosphonobutanetricarboxylic acid, and their alkali metal (preferably sodium) salts; phosphonic acid-based chelating agents; oxalic acid, malonic acid , Succinic acid, glutaric acid, adipic acid, pimelic acid, maleic acid, fumaric acid, malic acid, tartaric acid, citric acid, their anhydrides and their alkali metal (preferably sodium) salts such as divalent or higher carboxylic acids Acid compounds, It can be cited an anhydride or dianhydride carboxylic acid compound of divalent or more dehydrated. The concentration of these chelating agents is generally in the range of 0.01 to 40% by mass.
  • a reducing agent As an additive, it is preferable to use a reducing agent as an additive.
  • the reducing agent include copper chloride, ferrous chloride, copper powder, silver powder and the like.
  • the concentration of these reducing agents is generally in the range of 0.01 to 10% by mass.
  • the etching solution composition of the present invention preferably further contains (D) a halide ion supply source (hereinafter also referred to as “component (D)”).
  • component (D) a halide ion supply source
  • the difference (deviation) between the width of the resist pattern and the width of the fine line formed by etching can be further reduced by further including the component (D).
  • halide ions supplied from the halide ion source include chloride ions, bromide ions, iodide ions, and the like.
  • a halide ion supply source for example, a water-soluble salt containing halide ions can be used.
  • water-soluble salts containing halide ions include halide salts such as sodium chloride and potassium chloride; ammonium chloride and the like.
  • it is preferable to use a halide salt because etching can be performed at a better rate, and an alkali metal chloride salt is more preferable, and sodium chloride is particularly preferable.
  • the concentration of the component (D) in the etching solution composition is preferably in the range of 0.00001 to 0.1% by mass.
  • concentration of component (D) is less than 0.00001 mass%, the blending effect of component (D) may not be obtained.
  • concentration of component (D) exceeds 0.1% by mass, the blending effect of the component (D) does not improve any more.
  • concentration of component (D) is more preferably in the range of 0.0001 to 0.01% by mass.
  • the etching method of the present invention includes a step of etching an indium oxide-based layer using the above-described etching solution composition of the present invention. If the etching liquid composition of this invention is used, the laminated body which consists of an indium oxide type layer and a metal type layer can be etched collectively.
  • the indium oxide based layer constituting the laminate may be one layer or two or more layers.
  • the metal-based layer constituting the laminate may be one layer or two or more layers.
  • the metal-based layer may be disposed in the upper layer, the lower layer, or the upper layer and the lower layer. Furthermore, indium oxide-based layers and metal-based layers may be alternately stacked.
  • a method for etching the indium oxide-based layer or the laminated body of the indium oxide-based layer and the metal-based layer at a time is not particularly limited, and a general etching method may be employed.
  • an etching method such as a dip method, a spray method, or a spin method can be given.
  • the base material is dipped in an etching solution composition under appropriate etching conditions and then pulled up.
  • the Cu / ITO layer on the PET substrate can be etched together.
  • Etching conditions in the dip-type etching method are not particularly limited, and may be set arbitrarily according to the shape, film thickness, etc. of the substrate (object to be etched).
  • the etching temperature is preferably 10 to 60 ° C., more preferably 20 to 40 ° C.
  • the temperature of the etchant composition may increase due to reaction heat. For this reason, you may control temperature by a well-known means so that the temperature of an etching liquid composition may be maintained in said range as needed.
  • the etching time is not particularly limited as long as it is sufficient to complete the etching. For example, in the wiring manufacturing of an electronic circuit board, if the film thickness is about 5 to 500 nm, the etching may be performed for about 10 to 600 seconds in the above temperature range.
  • the etching solution composition is sprayed on the base material under appropriate conditions, so that Cu / The ITO layer can be etched.
  • Etching conditions in the spray-type etching method are not particularly limited, and may be set arbitrarily according to the shape and film thickness of the object to be etched.
  • the spraying conditions can be selected from the range of 0.01 to 1.0 MPa, preferably in the range of 0.02 to 0.5 MPa, and more preferably in the range of 0.05 to 0.2 MPa.
  • the etching temperature is preferably 10 to 60 ° C., more preferably 20 to 40 ° C.
  • the temperature of the etchant composition may increase due to reaction heat. For this reason, you may control temperature by a well-known means so that the temperature of an etching liquid composition may be maintained in said range as needed.
  • the etching time is not particularly limited as long as it is sufficient to complete the etching. For example, in the wiring manufacturing of an electronic circuit board, if the film thickness is about 5 to 500 nm, the etching may be performed in the above temperature range for about 5 to 600 seconds.
  • the etching method of the present invention preferably further includes a step of adding a replenisher to the etchant composition in order to recover the performance of the etchant composition that has deteriorated due to repeated etching.
  • a replenisher for example, an aqueous solution containing the component (A), the component (B), the component (C), and water; or an aqueous solution containing the component (C) and water can be used.
  • the concentration of each component in these aqueous solutions may be, for example, about 3 to 20 times the concentration of each component in the etching solution composition.
  • the etching solution composition of the present invention and the etching method using this etching solution composition are preferably used mainly for processing electrodes and wirings of liquid crystal displays, plasma displays, touch panels, organic EL, solar cells, lighting fixtures, etc. can do.
  • Etching liquid compositions (Examples I-1 to 12) were obtained by using the amide compounds shown in Table 1 and mixing the components so that each component had the composition shown in Table 2. In addition, water was mix
  • Examples I-13 to 24 A resist pattern having a width of 30 ⁇ m and an opening of 30 ⁇ m was formed using a positive liquid resist on a substrate in which an ITO layer (15 nm) and a Cu layer (400 nm) were laminated in this order on a glass substrate.
  • the substrate on which the resist pattern was formed was cut into a length of 20 mm ⁇ width of 20 mm to obtain a test piece.
  • the obtained test pieces were subjected to a dip etching process with stirring at 35 ° C. for 1 minute using the etching solution compositions of Examples I-1 to 12 to form fine wires.
  • Examples I-13 to 24 fine lines with good linearity were formed.
  • the value of “L 1 ” was smaller than those of Comparative Examples I-1 to I-5, and a thin line having a desired width could be formed.
  • the value of “L 1 ” was particularly small in Examples I-13, I-14, and I-16.
  • Examples I-20 to 24 using the etching solution compositions of Examples I-8 to 12 containing the component (D) the etching solutions of Examples I-1 to 7 not containing the component (D) It was found that the value of “L 1 ” was reduced by about 50% as compared with Examples I-13 to 19 using the composition.
  • Etching liquid compositions (Examples II-1 to 9) were obtained by using the amino acid compounds shown in Table 5 and mixing the components so as to have the composition shown in Table 6. In addition, water was mix
  • ⁇ Etching method (2)> (Examples II-10 to 18) A resist pattern having a width of 10 ⁇ m and an opening of 10 ⁇ m was formed using a positive liquid resist on a substrate in which an ITO layer (15 nm) and a Cu layer (400 nm) were laminated in this order on a glass substrate.
  • the substrate on which the resist pattern was formed was cut into a length of 20 mm ⁇ width of 20 mm to obtain a test piece.
  • the obtained test pieces were subjected to pattern etching (etching process) by a spray method using the etching solution compositions of Examples II-1 to 9-9 at 35 ° C. and a spray pressure of 0.05 MPa. The etching process was performed until it was confirmed visually that there was no residue between the wirings. Note that “optimum etching time” in this specification means “etching processing time until there is no residue between wirings”.
  • ⁇ Evaluation (2)> Using a laser microscope, the state of the thin line and the deviation between the width of the resist pattern and the width of the thin line were evaluated. The state of the thin line was evaluated by confirming the presence or absence of a chip having a length of 3 ⁇ m or more at the corner of the thin line. Specifically, a case where a chip with a length of 3 ⁇ m or more could not be confirmed was evaluated as “+”, and a chip where a chip with a length of 3 ⁇ m or more was confirmed was evaluated as “ ⁇ ”.
  • the deviation between the width of the resist pattern and the width of the fine line was evaluated by calculating the absolute value “L 1 ” of the difference between the width of the resist pattern before the etching process and the width of the upper portion of the formed fine line.
  • the value of “L 1 ” is “0”, it means that the width of the resist pattern before the etching process and the width of the formed fine line are the same, and a thin line having a desired width is formed.
  • the larger the value of “L 1 ” the larger the difference between the width of the resist pattern before the etching process and the width of the formed fine line, which means that a thin line having a desired width was not formed.
  • a case where the value of “L 1 ” was less than 3 ⁇ m was evaluated as “+”, and a case where the value of “L 1 ” was 3 ⁇ m or more was evaluated as “ ⁇ ”.
  • the evaluation results are shown in Table 8.

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Abstract

L'invention concerne une composition liquide de gravure qui est utile pour graver une couche à base d'oxyde d'indium et qui assure une bonne linéarité, une faible réduction de largeur due à la gravure et la formation d'une ligne mince ayant la largeur souhaitée, même sans contenir de chlorure d'hydrogène. La composition liquide de gravure contient : (A) de 0,01 à 15 % en masse de peroxyde d'hydrogène ; (B) de 1 à 40 % en masse d'acide sulfurique ; (C) (C-1) de 0,01 à 10 % en masse d'un composé amide représenté par la formule générale (1) (dans laquelle R1, R2 et R3 représentent des atomes d'hydrogène, des groupes alkyles ayant de 1 à 8 atomes de carbone, et autres) ou (C-2) de 0,01 à 20 % en masse d'un composé aminoacide ; de l'eau.
PCT/JP2017/010805 2016-03-24 2017-03-16 Composition liquide de gravure et procédé de gravure WO2017164090A1 (fr)

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CN110273156B (zh) * 2018-03-14 2023-06-30 东进世美肯株式会社 不包含氟的蚀刻液组合物
TWI749287B (zh) * 2019-01-22 2021-12-11 達興材料股份有限公司 酸性過氧化氫水溶液組成物
CN110819991B (zh) * 2019-11-08 2022-07-15 日月光半导体(上海)有限公司 蚀刻液及使用其的封装基板的制造方法
CN111850561B (zh) * 2020-07-29 2022-07-15 珠海市板明科技有限公司 一种硫酸双氧水体系的蚀铜加速剂及蚀刻药水
CN114318344A (zh) * 2020-09-29 2022-04-12 上海飞凯材料科技股份有限公司 一种蚀刻组合物及其应用

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027708A (ja) * 2005-07-13 2007-02-01 Samsung Electronics Co Ltd エッチング液及びこれを用いた液晶表示装置の製造方法
JP2013084680A (ja) * 2011-10-06 2013-05-09 Nippon Hyomen Kagaku Kk 透明導電性薄膜積層体のエッチング液
US20140295626A1 (en) * 2013-03-27 2014-10-02 Samsung Display Co., Ltd. Etchant composition, and method of manufacturing a display substrate using the same

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006111953A (ja) 2004-10-18 2006-04-27 Mec Kk 銅又は銅合金のエッチング剤、その製造法、補給液及び配線基板の製造法
TWI421937B (zh) * 2006-09-13 2014-01-01 Nagase Chemtex Corp 蝕刻液組成物
JP5018581B2 (ja) 2008-03-21 2012-09-05 東亞合成株式会社 エッチング液を用いた透明導電膜のエッチング方法
TW201250059A (en) * 2011-03-08 2012-12-16 Nagase Chemtex Corp Etching liquid
KR101349975B1 (ko) * 2011-11-17 2014-01-15 주식회사 이엔에프테크놀로지 몰리브덴 합금막 및 인듐 산화막 식각액 조성물
KR102058485B1 (ko) * 2012-03-13 2019-12-23 가부시키가이샤 아데카 에칭액 조성물 및 에칭방법
JP6078394B2 (ja) * 2013-03-27 2017-02-08 株式会社Adeka エッチング液組成物及びエッチング方法
TWI495762B (zh) * 2013-11-01 2015-08-11 Daxin Materials Corp 蝕刻液組成物及蝕刻方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007027708A (ja) * 2005-07-13 2007-02-01 Samsung Electronics Co Ltd エッチング液及びこれを用いた液晶表示装置の製造方法
JP2013084680A (ja) * 2011-10-06 2013-05-09 Nippon Hyomen Kagaku Kk 透明導電性薄膜積層体のエッチング液
US20140295626A1 (en) * 2013-03-27 2014-10-02 Samsung Display Co., Ltd. Etchant composition, and method of manufacturing a display substrate using the same

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