WO2017163472A1 - プラズマ処理方法及びプラズマ処理装置 - Google Patents

プラズマ処理方法及びプラズマ処理装置 Download PDF

Info

Publication number
WO2017163472A1
WO2017163472A1 PCT/JP2016/081259 JP2016081259W WO2017163472A1 WO 2017163472 A1 WO2017163472 A1 WO 2017163472A1 JP 2016081259 W JP2016081259 W JP 2016081259W WO 2017163472 A1 WO2017163472 A1 WO 2017163472A1
Authority
WO
WIPO (PCT)
Prior art keywords
application
plasma processing
voltage pulse
high voltage
processing
Prior art date
Application number
PCT/JP2016/081259
Other languages
English (en)
French (fr)
Japanese (ja)
Inventor
雅彦 杉原
Original Assignee
株式会社栗田製作所
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 株式会社栗田製作所 filed Critical 株式会社栗田製作所
Publication of WO2017163472A1 publication Critical patent/WO2017163472A1/ja

Links

Images

Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy

Definitions

  • the present invention relates to a plasma processing method and a plasma processing apparatus for controlling execution of plasma processing for performing surface modification or the like on a processing object according to predetermined processing conditions.
  • Patent Document 1 discloses an example of a conventional plasma processing apparatus.
  • a plasma generation mechanism that generates a plasma by introducing a first gas into a vacuum vessel (chamber) and a plasma generation space adjacent to the vacuum vessel and supplying electric energy to the first gas. have.
  • An object of the present invention is to provide a plasma processing method and a plasma processing apparatus capable of performing plasma processing according to various processing specifications in one chamber.
  • the first aspect of the present invention is: A processing chamber in which workpieces can be installed; High vacuum means for evacuating the processing chamber to increase the vacuum; A gas introduction means for introducing a predetermined gas into the highly evacuated processing chamber; A high frequency power supply, A high voltage pulse source; A high-frequency output of the high-frequency power supply and a high-voltage pulse generated by the high-voltage pulse generation source are superimposed and applied to the object to be processed through a conductor that is conductively connected to the object to be processed installed in the processing chamber.
  • Applying means Input means for inputting plasma processing conditions including at least the high-frequency output and / or the application mode of the high voltage pulse; Storage means for storing input plasma processing conditions; An application control means for performing application control by the application means according to the application mode for a predetermined processing time after introducing the gas into the processing chamber by the gas introduction means, Based on the application mode stored in the storage means, the application control means performs application control of the high-frequency output and the high voltage pulse, and performs execution control of plasma processing on the object to be processed installed in the processing chamber. This is a plasma processing method.
  • the second aspect of the present invention is:
  • the storage means is a plasma processing method capable of storing one or more of the following application elements (a), (b), (c) and the processing time.
  • the plasma treatment condition includes a gas introduction mode in which one or more types of gas introduced into the processing chamber by the gas introduction unit and / or an introduction pressure of the gas are used.
  • Plasma processing for performing execution control of plasma processing on the workpiece by performing application control based on the application mode after executing control of the gas introduction based on the gas introduction mode stored in the storage unit Is the method.
  • the fourth aspect of the present invention is The application elements (a), (b), and (c) are respectively input possible ranges (a): 5 to 300 ⁇ s, (B): 0 to 2000 ⁇ s, (C): 1 to 5000 pps, In the plasma processing method.
  • a fifth aspect of the present invention is a plasma processing method in which the power of the high-frequency power source can be input in an input allowable range of 100 to 3000 W as an application element of the application mode.
  • a sixth aspect of the present invention is a plasma processing method in which a high voltage pulse voltage of the high voltage pulse generation source can be input within an input allowable range of 1 to 30 kV as an application element of the application mode.
  • the storage unit can store two or more of the same or different types of application modes according to the execution order of the application control, and the application control unit stores the storage unit according to the execution order.
  • This is a plasma processing method for performing application control according to the application mode.
  • the processing when plasma processing is executed by storing at least the first application mode and the second application mode different in execution order in the storage unit, the processing is performed by application control according to the first application mode.
  • the plasma processing method after surface modification of an object, deposition processing or ion implantation processing of a component contained in the gas is performed on the object to be processed by application control according to the second application mode.
  • the ninth aspect of the present invention A processing chamber in which workpieces can be installed; High vacuum means for evacuating the processing chamber to increase the vacuum; A gas introduction means for introducing a predetermined gas into the highly evacuated processing chamber; A high frequency power supply, A high voltage pulse source; A high-frequency output of the high-frequency power supply and a high-voltage pulse generated by the high-voltage pulse generation source are superimposed and applied to the object to be processed through a conductor that is conductively connected to the object to be processed installed in the processing chamber.
  • Applying means Input means for inputting plasma processing conditions including at least the high-frequency output and / or the application mode of the high voltage pulse; Storage means for storing input plasma processing conditions; Application control means for performing application control by the application means according to the application mode for a predetermined processing time after introducing the gas into the processing chamber by the gas introduction means, Based on the application mode stored in the storage means, the application control means performs application control of the high-frequency output and the high voltage pulse, and performs execution control of plasma processing on the object to be processed installed in the processing chamber.
  • This is a plasma processing apparatus.
  • the tenth aspect of the present invention is
  • the storage means is a plasma processing apparatus capable of storing one or more of the following application elements (a), (b), (c) and the processing time.
  • the plasma treatment condition includes a gas introduction mode in which one or more kinds of gas introduced into the processing chamber by the gas introduction unit and / or an introduction pressure of the gas are used.
  • the plasma processing apparatus performs execution control of the plasma processing on the workpiece by performing the application control based on the application mode after performing the execution control of the gas introduction based on the gas introduction mode stored in the storage unit.
  • the twelfth aspect of the present invention is
  • the application elements (a), (b), and (c) are respectively input possible ranges (a): 5 to 300 ⁇ s, (B): 0 to 2000 ⁇ s, (C): 1 to 5000 pps, It is the plasma processing apparatus which enabled input.
  • a thirteenth aspect of the present invention is a plasma processing apparatus in which the power of the high-frequency power source can be input in an input allowable range of 100 to 3000 W as an application element of the application mode.
  • a fourteenth aspect of the present invention is a plasma processing apparatus in which the high voltage pulse voltage of the high voltage pulse generation source can be input within an input allowable range of 1 to 30 kV as an application element of the application mode.
  • the storage unit can store two or more application types of the same type or different types according to the execution order of the application control, and the application control unit stores the storage unit according to the execution order.
  • the plasma processing apparatus performs application control according to the application mode.
  • Patent Document 2 discloses a plasma generation technique for generating plasma by applying a high-frequency output and a high voltage pulse to a workpiece by superimposing them through a conductor that is conductively connected to the workpiece placed in a chamber. It is disclosed. The present invention is based on such a plasma generation technique, for example, by setting the application mode of high-frequency output and / or high-voltage pulse in accordance with the basic processing contents such as sputter cleaning, ion implantation, and film formation processing. It is an invention made by paying attention to the point that plasma processing can be performed according to processing specifications.
  • the application means superimposes the high frequency output of the high frequency power source and the high voltage pulse generated by the high voltage pulse generation source via a conductor connected to the object to be processed installed in the processing chamber. Apply to the processing object, and input the plasma processing conditions including at least the high-frequency output and / or the application mode of the high voltage pulse by the input means, and memorize it in the storage means, After the gas is introduced into the processing chamber by the gas introduction means by the application control means, application control by the application means is performed according to the application mode during a predetermined processing time, Based on the application mode stored in the storage means, the application control means performs application control of the high-frequency output and the high voltage pulse, and performs execution control of plasma processing on the object to be processed installed in the processing chamber.
  • one or more of the output width of the application element (a), the application time of (b), the period of (c) and the processing time are stored and set. Therefore, various plasma processing can be performed at low cost by setting a desired processing specification in a wide range and operating one plasma processing apparatus.
  • various plasma processes can be executed and controlled at low cost by storing and setting the gas introduction mode in addition to the application mode.
  • each of the application elements (a), (b), and (c) has the following input possible range (a): 5 to 300 ⁇ s, (B): 0 to 2000 ⁇ s, (C): 1 to 5000 pps, Therefore, it is possible to set the application mode in a wide control range and diversify the executable region of the plasma processing.
  • the setting variation of the high-frequency output can be diversified by allowing the power of the high-frequency power source to be input within the input allowable range of 100 to 3000 W as the application element of the application mode.
  • Plasma processing can be performed at low cost.
  • the high voltage pulse voltage can be input within the input allowable range of 1 to 30 kV as the application element of the application mode, so that the setting variations of the high voltage pulse can be diversified.
  • Plasma processing can be performed at low cost.
  • two or more of the same or different application modes are stored and set in the storage unit according to the execution order of the application control, and stored in the storage unit according to the execution order by the application control unit. Since application control according to the application mode can be performed, not only a single type of plasma processing, but also different plasma processing for an object to be processed installed in a processing chamber is executed and controlled at a low cost by executing execution control in a stored and set execution order. be able to.
  • the object to be processed by the application control according to the first application mode when plasma processing is executed by storing at least different first application modes and second application modes in the storage unit according to the execution order, the object to be processed by the application control according to the first application mode.
  • the deposition process or the ion implantation process of the component contained in the introduced gas can be performed on the object to be processed by the application control according to the second application mode.
  • Or ion implantation processing can be performed while the processing object is installed in the processing chamber without using a separate plasma processing apparatus, and the work time and processing time required for each processing step as well as the equipment cost The processing cost can be greatly reduced.
  • the application means superimposes the high frequency output of the high frequency power source and the high voltage pulse generated by the high voltage pulse generation source via a conductor connected to the object to be processed installed in the processing chamber. Apply to the processing object, and input the plasma processing conditions including at least the high-frequency output and / or the application mode of the high voltage pulse by the input means, and memorize it in the storage means, After the gas is introduced into the processing chamber by the gas introduction means by the application control means, application control by the application means is performed according to the application mode during a predetermined processing time, Based on the application mode stored in the storage means, the application control means performs application control of the high-frequency output and the high voltage pulse, and performs execution control of plasma processing on the object to be processed installed in the processing chamber.
  • one or more of the output width of the application element (a), the application timing of (b), the period of (c) and the processing time are stored and set. Therefore, it is possible to realize a plasma processing apparatus capable of performing various plasma processes at low cost by setting a desired processing specification in a wide range and operating one plasma processing apparatus.
  • the eleventh aspect of the present invention by storing and setting the gas introduction mode in addition to the application mode, it is possible to realize a plasma processing apparatus capable of performing and controlling various plasma processes at low cost.
  • each of the application elements (a), (b), and (c) has the following input possible range (a): 5 to 300 ⁇ s, (B): 0 to 2000 ⁇ s, (C): 1 to 5000 pps, Therefore, it is possible to set the application mode in a wide control range and realize a plasma processing apparatus capable of diversifying the executable region of the plasma processing.
  • the power of the high frequency power source can be input within the input allowable range of 100 to 3000 W, thereby diversifying the setting variations of the high frequency output, A plasma processing apparatus that can perform plasma processing at low cost can be realized.
  • the high voltage pulse voltage can be input in the input allowable range of 1 to 30 kV as the application element of the application mode, thereby diversifying the setting variations of the high voltage pulse, A plasma processing apparatus that can perform plasma processing at low cost can be realized.
  • two or more same or different application modes are stored and set in the storage unit according to the execution order of the application control, and stored in the storage unit according to the execution order by the application control unit. Since application control according to the application mode can be performed, not only a single type of plasma processing, but also different plasma processing for the workpiece to be processed in the processing chamber can be executed and controlled at a low cost by storing and setting the execution order. Can realize a plasma processing apparatus.
  • 5 is a flowchart showing plasma processing condition input setting processing by a control unit 20; 4 is a flowchart showing a high vacuum process by a control unit 20. 4 is a flowchart showing plasma processing by a control unit 20 3 is a flowchart showing gas introduction processing by a control unit 20; It is a flowchart which shows the initial setting process for application control.
  • FIG. 6 is a diagram showing a panel display example of the touch panel 27.
  • FIG. 6 is a diagram showing a panel display example of the touch panel 27.
  • FIG. 1 shows a schematic configuration of a vacuum exhaust system of the plasma processing apparatus according to the present embodiment.
  • FIG. 2 shows a schematic configuration diagram of a gas introduction system of the plasma processing apparatus.
  • the plasma processing apparatus has a processing chamber (hereinafter referred to as a chamber) 1 in which an object to be processed (hereinafter referred to as a workpiece W) for plasma processing can be installed, and the processing chamber is evacuated to a high vacuum. And a gas introducing means for introducing a predetermined gas into the highly evacuated processing chamber 1.
  • a processing chamber hereinafter referred to as a chamber 1 in which an object to be processed (hereinafter referred to as a workpiece W) for plasma processing can be installed, and the processing chamber is evacuated to a high vacuum.
  • a gas introducing means for introducing a predetermined gas into the highly evacuated processing chamber 1.
  • exhaust pipes D 1 to D 7 are disposed outside the chamber 1 as high vacuum exhaust paths.
  • the exhaust pipe D1 communicates with the chamber 1 and is branched and connected to the exhaust pipes D2 and D3.
  • An oil rotary vacuum pump (hereinafter referred to as a rotary pump) RP is installed in the final exhaust pipe D5.
  • a mechanical booster pump MBP is installed between the exhaust pipes D4 and D5.
  • the rotary pump RP and the mechanical booster pump MBP are preliminary exhaust pumps, and are used for high vacuuming in the previous stage leading to ultra high vacuum.
  • Each of the rotary pump RP and the mechanical booster pump MBP has an exhaust capability in which the ultimate pressure is about 0.7 Pa and 4 ⁇ 10 ⁇ 1 Pa, respectively.
  • One end side of the exhaust pipe D3 is connected to the intake side of the turbo molecular pump TMP.
  • the exhaust side of the exhaust pipe D4 is branched into an exhaust pipe 5 and an exhaust pipe 7.
  • the exhaust side of the turbo molecular pump TMP is connected to the exhaust pipe D7.
  • the exhaust side of the exhaust pipe D4 is a mechanical booster pump MBP intake side path.
  • a rough valve RV is provided between the exhaust pipe D2 and the exhaust pipe D4.
  • the turbo molecular pump TMP is an ultra-high vacuum forming pump, and has an exhaust capability with an ultimate pressure of about 1 ⁇ 10 ⁇ 7 Pa.
  • a main valve MV, rough valve RV, and fore valve FV for opening and closing the exhaust path are provided in each exhaust path.
  • the rough valve RV is installed on the intake side of the mechanical booster pump MBP in the exhaust pipe D4.
  • the fore valve FV is installed in the exhaust pipe D7.
  • the main valve MV is installed in the exhaust pipe D3.
  • a conductance valve CV is installed in the exhaust pipe D1 between the branch point of the exhaust pipes D2 and D3 and the chamber 1.
  • the conductance valve CV is a conductance variable valve that is provided on the intake side of the turbo molecular pump TMP and can adjust the pipe opening degree by 0 to 100%.
  • Vacuum gauges IG and PG for measuring a high degree of vacuum are respectively provided in the exhaust pipe D1.
  • the vacuum gauge IG is an ionization vacuum gauge, and its measurement range is 1.3 ⁇ 10 ⁇ 5 Pa to 6.7 ⁇ 10 ⁇ 1 Pa.
  • the vacuum gauge PG is a Pirani vacuum gauge, and its measurement range is 4.0 ⁇ 10 ⁇ 1 Pa to 2.7 ⁇ 10 3 Pa.
  • a diaphragm pressure gauge DG is installed in the exhaust pipe D1.
  • the measurement range of the diaphragm pressure gauge DG is 0.1 Pa to 10 MPa.
  • a thermocouple vacuum gauge TC is installed between the exhaust side of the turbo molecular pump TMP and the fore valve FV.
  • the thermocouple vacuum gauge TC is used for pressure measurement during roughing.
  • the high vacuum means is constituted by three types of exhaust pumps (rotary pump RP, mechanical booster pump MBP and turbo molecular pump TMP), and the rotary pump RP, mechanical booster pump MBP and turbo molecular pump By sequentially driving the TMP, the inside of the chamber 1 can be brought into an ultrahigh vacuum state.
  • the chamber 1 is provided with a drain line D6 for returning the vacuum state to the normal pressure state.
  • a leak valve SV1 for opening and closing the drain line D6 is provided. When venting or the like is performed, the inside of the chamber 1 becomes a normal pressure state via the drain line D6 due to the opening of the leak valve SV1.
  • an introduction path 7 for introducing various gases used for plasma processing is connected to the chamber 1.
  • a diamond-like carbon (hereinafter referred to as DLC) film forming process is taken as an example, and six gases (processing gases: argon Ar, hydrogen H 2 , methane CH 4 , and acetylene C 2 H 2 are used. , Hexamethyldisiloxane HMDSO, toluene C 6 H 5 CH 3 ).
  • Each of the six processing gases can be supplied from gas supply sources 14-19.
  • the gas supply source is not limited to the gas storage mode accommodated in the cylinder, and for example, a gas generation mode such as a hydrogen generator can be used.
  • the supply gases from the gas supply sources 14 to 19 are supplied to the introduction path 7 through the individual gas supply paths 8 to 13, respectively, and are introduced into the chamber 1 through the introduction path 7.
  • the gas supply passages 8 to 13 are provided with electromagnetic on-off valves V1 to V6 for opening and closing each gas supply passage.
  • an electromagnetic opening / closing valve V 7 is installed between the chamber 1 and the gas supply path.
  • the gas introduction means is constituted by the gas supply sources 14 to 19, the introduction path 7 and the gas supply paths 8 to 13, and the electromagnetic opening / closing valves V 1 to V 7 are opened and closed to enter the chamber 1.
  • One kind of gas or mixed gas can be introduced.
  • a gas flow meter FM capable of detecting the amount of introduced gas and outputting a measurement signal is installed in the middle of the path to the chamber 1 and each electromagnetic open / close valve.
  • the plasma processing apparatus has a high-frequency generator (hereinafter referred to as RF power source) 2 as a high-frequency power source and a high voltage as a high-voltage generation source.
  • RF power source a high-frequency generator
  • a pulse generator 3 is provided, and further, the high-frequency output of the RF power source 2 and the high-voltage pulse generated by the high-voltage pulse generator 3 are superimposed in order to apply the electric energy of the power source to the workpiece W in the chamber 1.
  • the superimposing device 4 and the superimposition output of the superimposing device 4 are supplied to the conductor 6 disposed in the chamber 1 through the feedthrough (high voltage introducing portion) 5 and are connected to the work W electrically connected to the conductor 6.
  • Application means for applying is provided.
  • FIG. 3 shows a schematic configuration of the control unit 20 provided in the plasma processing apparatus according to the present embodiment.
  • the plasma processing apparatus includes, as a control system, an input unit for inputting plasma processing conditions, a control unit 20 that controls execution of plasma processing based on the input plasma processing conditions, and a superimposing device 4. And an energization control circuit unit 31 for controlling plasma generation.
  • the control unit 20 includes a microprocessor including a CPU 21, a ROM 22 that stores a plasma processing control program, and a RAM 23 that is a working memory.
  • the control unit 20 can be configured using a programmable logic device (PLD).
  • PLD programmable logic device
  • the RF power source 2 and the high voltage pulse generator 3 are connected to the control unit 20 via the relay board 24.
  • the plasma generation control energization control circuit unit 31 detects an output current supplied to the conductor 6 via the superimposing device 4 and outputs to the control unit 20 a detection signal indicating that the output current is below a predetermined level.
  • a current detection circuit (not shown) is included.
  • the control unit 20 determines that the plasma generation is abnormal, and executes an error process for operation stop.
  • the control unit 20 performs RF output control of the RF power source 2 and high voltage pulse generation control of the high voltage pulse generator 3 by executing the plasma processing control program.
  • FIG. 4 shows an example of the circuit configuration of the superimposing device 4.
  • the conductor 6 that is conductively connected to the workpiece W is commonly used for the application of the high frequency output (RF output) of the RF power source 2 and the high voltage pulse of the high voltage pulse generator 3, and the RF output, the high voltage pulse, and the superimposing device 4 are used. Via the workpiece W.
  • the superimposing device 4 couples the workpiece W and the high voltage pulse generator 3, and a coupling / mutual interference block circuit unit 4 a that blocks mutual interference between the high voltage pulse generator 3 and the RF power source 2. And a matching circuit unit 4b for matching impedances of the RF power source 2 and the workpiece W.
  • the coupling / mutual interference blocking circuit unit 4a generates arc discharge by the high voltage pulse, and blocks the gap G for conducting the circuit and the RF output from the RF power source 2 from affecting the high voltage pulse generator 3.
  • the gap G may be used after being short-circuited. Further, by connecting a resistor in parallel to the gap G, the pulse application voltage can be reduced.
  • the cathode of the diode D is connected to the output side of the high voltage pulse generator 3. Further, the non-ground side end of the resistor R is connected to the RF power source 2 by a coaxial cable 4d.
  • the matching circuit unit 4b includes a resonance variable capacitor C1 and a coil L2, and an impedance conversion capacitor C2. Since the capacitor C2 is connected in parallel to the resistor R, the non-ground side end is connected to the RF power source 2 by the coaxial cable 4d. A terminal on the gap G side of the variable capacitor C1 is connected to the field through 5 and the gap G forming conductor 4c on the conductor 6 side.
  • the input means includes a liquid crystal touch panel 27, a touch panel control unit 28 that acquires input information from the touch panel 27 and gives it to the control unit 20, a display panel 30 that performs various displays such as touch panel operation display, the control unit 20, and the touch panel control unit. And a display panel control unit 29 that performs display drive control of the display panel 30 based on the instruction information from the control panel 28.
  • the plasma processing conditions that can be input by the input means include at least a high frequency output and / or a high voltage pulse application mode.
  • the input device is not limited to a liquid crystal touch panel, and key input means such as a keyboard or a button switch can be used.
  • the drive power of the control unit 20 is supplied from the drive power supply device 26 by turning on a power switch 25 installed at an appropriate position of the plasma processing apparatus.
  • the drive power supply 26 also supplies drive power for the touch panel 27 and the display panel 30, but the supply route is omitted in FIG.
  • Each of the RF power source 2 and the high voltage pulse generator 3 has a built-in drive power circuit.
  • the control unit 20 includes control signals S1 to S3 for controlling driving of the rotary pump RP, mechanical booster pump MBP, and turbo molecular pump TMP, a main valve MV, a rough valve RV, a fore valve FV, a conductance valve CV, and a leak valve.
  • Open / close instruction signals S7, S4, S5, S6, S8 for opening and closing each of SV1, and opening / closing instruction signals S14 to S20 for opening and closing each of electromagnetic opening and closing valves V1 to V7 are executed in the plasma processing control program. To be output.
  • the control unit 20 can be input with a measurement signal S21 of the gas flow meter FM, measurement signals S9 and S10 of the degree of vacuum by the vacuum gauge IG and the vacuum gauge PG, and a pipe opening signal S12 of the conductance valve CV. . Further, the measurement signal S11 of the diaphragm pressure gauge DG and the measurement signal S13 of the thermocouple vacuum gauge TC can be input.
  • the control unit 20 constitutes an application control unit that performs application control by the application unit according to the application mode of input information for a predetermined processing time with the processing gas introduced into the chamber 1.
  • the RAM 23 constitutes storage means for storing the inputted plasma processing conditions.
  • the plasma processing conditions that can be set include the power value of the RF power source 2 and the pulse peak value of the high-voltage pulse generated by the high-voltage pulse generator 3 in addition to the high-frequency output and / or the high-voltage pulse application mode. Yes.
  • the type of processing gas and / or the gas introduction mode depending on the introduction pressure of the processing gas can be set.
  • the plasma processing conditions can be set for each single processing step, and a maximum of 20 processing steps can be set. Of course, in the present invention, it is possible to perform plasma processing with only one processing step.
  • the plasma processing condition data set for each processing step can be saved in a setting parameter file provided in the RAM 23.
  • FIG. 16 shows a panel display example of the touch panel 27.
  • FIG. 16A is a screen display example displayed during automatic film formation.
  • the data is displayed by the screen display shown in (16A).
  • the screen display shown in (16A).
  • the numerical values in FIG. 16 are shown as model values.
  • 16a is a display area for informing the film forming operation state.
  • the display area 16a displays the operation status from the start to the end of automatic operation.
  • Reference numeral 16b denotes a display area for notifying various setting parameters of plasma processing conditions. In the upper part of the display area 16b, setting parameters for each processing step number are displayed. Processing step numbers (1 to 20) can be switched by touch-inputting the “front and back buttons” (hereinafter simply referred to as pressing).
  • the display area 16b includes application mode data display areas 16c and 16d for displaying the application mode of the high frequency output and the high voltage pulse, and a gas introduction mode data display area 16e for displaying the gas introduction mode for each processing gas. .
  • a display area 16f for displaying the save destination of the setting parameter file in addition to the display area described above, a display area 16g for displaying a push button for inputting an instruction to start and forcibly terminate automatic operation, and automatic A display area 16h for displaying an operation or setting error, a display area 16i for displaying an elapsed time from the start of evacuation to the end of plasma processing, and the like are provided.
  • the display area 16j is a display area for displaying a push button that can input an instruction to read the existing stored setting data or register the setting data in the setting parameter file.
  • the display area 16k is a display area for displaying a page switching button for setting film forming parameters for each processing step.
  • the number of pages that can be switched by the switch button is four types of processing steps 1 to 5, 6 to 10, 11 to 15, and 16 to 20, and can be switched by 5 processing steps on the display screen of (16B). Yes.
  • the display area 16k is a display area for displaying a mode setting button capable of instructing and inputting the power mode or the end mode.
  • a mode setting button capable of instructing and inputting the power mode or the end mode.
  • the “cooling time” in the display area 16k can be set.
  • the evacuation process is executed for the set time after the plasma process is completed, and the work cooling process can be executed.
  • the display area 16m is a display area for setting plasma processing conditions.
  • the display area 16m includes an application mode data setting area 16n in which an application mode can be set, a gas introduction mode data setting area 16o in which a gas introduction mode for each processing gas can be set, and an operation in which operating conditions can be set.
  • a condition setting area 16p is included.
  • the initial value of the processing time data is displayed as “0”, and when there is no input operation of the processing time data, or the processing step set to “0” is a pass step that is not controlled.
  • the plasma processing conditions can be registered by pressing the “registration button” in the display area 16j.
  • the main application elements that can be set for each processing step as the application mode include the following (a), (b), (c) and processing time (minutes, seconds). Details of the application mode will be described with reference to FIG. (A) Output width Tr ( ⁇ s) for applying RF output, (B) High voltage pulse application timing T2 for applying a high voltage pulse through the start of RF output application, (C) Repetitive frequency F (pps) for repeatedly executing RF output and high voltage pulse application according to (a) and (b) as one unit. The frequency F data is used to obtain the unit period obtained by calculation based on the frequency F data.
  • the output voltage value (kV) of the high voltage pulse, the incident power value (W) of the RF power supply, and the pulse width Tp ( ⁇ s) of the high voltage pulse can be set.
  • some of these application elements may be fixed and the remaining application elements may be settable parameters.
  • one of the application elements (a), (b), (c) and the processing time is selected. Two or more can be variably settable.
  • the application elements (a), (b), and (c) are the following wide input possible ranges (a): 5 to 300 ⁇ s, (B): 0 to 2000 ⁇ s, (C): 1 to 5000 pps, It is possible to input and set in.
  • the input power value of the RF power supply can be input and set in the input range of 100 to 3000 W, and the output voltage value of the high voltage pulse can be input and set in the input range of BR> P to 30 kV.
  • the gas introduction mode data that can be set for each processing step is a gas flow rate (sccm) for each processing gas.
  • the operating condition data that can be set for each processing step includes the control pressure in the chamber 1, the upper limit value of the number of arcing detections by an arc discharge abnormality detector (not shown) provided in the chamber 1, and an energization control circuit for plasma generation control.
  • the lower limit value of the output current which is a criterion for determining the plasma generation abnormality by the output current detection function of the unit 31.
  • the pressure (Pa) in the chamber 1 when performing plasma processing can also be set as one processing condition.
  • the degree of vacuum in the chamber before gas introduction is set in advance to 1.33 ⁇ 10 ⁇ 3 Pa.
  • the degree of vacuum in the chamber before gas introduction may be set as one processing condition.
  • (18A) in FIG. 18 shows a film formation parameter setting recipe used for the DLC film formation of one embodiment.
  • five steps of processing steps 1 to 5 are set.
  • (18A) is the processing time, gas type, gas flow rate, repetition frequency F, RF width Tr, pulse of plasma processing executed at the set pulse timing (repetition frequency F, RF width Tr, pulse delay T2, pulse width Tp). It is a setting recipe regarding parameters of delay T2, pulse width Tp, RF incident power, pressure in the chamber at the time of gas introduction, and high voltage pulse voltage.
  • FIG. 18B is an actual measurement value in a DLC film formation verification experiment performed based on the setting recipe of 18A.
  • the measured pressure of the vacuum gauge PG is a value on the order that substantially matches the set pressure in the chamber, the number of arcing is “0”, and plasma processing is smoothly performed with the set film formation parameters. I understand that. (18B) also shows measured data of the open / close ratio of the conductance valve CV, RF reflected power, high voltage pulse current, and number of arcing.
  • FIG. 5 shows a plasma processing condition input setting process by the control unit 20.
  • step S40 it is determined whether or not there is a registration on the plasma processing condition setting registration screen (16B) of FIG. By depressing the “registration button”, it is determined that there is a registration, and in steps S41 to S44, processing gas introduction conditions, high frequency application conditions, and high voltage pulse application conditions for each processing step m (m: 1 to 20). Each input data is stored and set in a setting parameter data file.
  • FIG. 6 shows a high vacuum process performed prior to the plasma process.
  • step S51 start processing of three kinds of exhaust pumps for vacuum exhaust (rotary pump RP, mechanical booster pump MBP, and turbo molecular pump TMP) is performed (step S51).
  • pump activation, pump pre-heat treatment, and the like are performed.
  • the rough valve RV is driven to open the exhaust path of the roughing pump (rotary pump RP, mechanical booster pump MBP), and the roughing vacuum exhaust of the chamber 1 is performed (step S52). It is determined whether or not the roughing vacuum degree is 10 Pa or less by measuring the vacuum degree with the vacuum gauge PG (step S53). When the roughing vacuum degree is reached, the process proceeds to a high vacuum exhausting process (step S54).
  • the rough valve RV When executing the high vacuum exhaust process, the rough valve RV is closed and the vacuum exhaust system such as the main valve MV and the fore valve FV is opened and exhausted by the turbo molecular pump TMP (step S54).
  • the ultra-high vacuum degree obtained by exhausting with the turbo molecular pump TMP is measured by a vacuum gauge IG. It is detected from the measurement data of the vacuum gauge IG that the inside of the chamber 1 has reached the set vacuum level, and the high vacuum processing is completed (step S55).
  • FIG. 7 shows an execution processing procedure for executing the plasma processing.
  • Plasma processing is started upon completion of the above high vacuum processing.
  • data for each processing step is taken into the work area of the RAM 23 from the setting parameter data file (steps S1 to S3).
  • the processing flag for each processing step having an execution request is turned on.
  • the gas introduction process (step S4) and the high frequency / high pressure pulse application process (step S5) are sequentially performed in the order of the process step numbers.
  • the processing flag of the processing step is turned off (steps S6 and S7).
  • step S9 and S10 processing for the next processing step (step S2 to S7) are repeatedly executed.
  • step S11 an end process corresponding to the set end mode is executed (step S11).
  • the step transition time is not limited to the above-mentioned 5 seconds, and the shorter it is, the shorter the time required to complete the processing of all steps.
  • FIG. 8 shows details of the gas introduction process (step S4).
  • the processing gas type and gas flow rate obtained from the setting parameter data are discriminated for each processing step, and the setting gas can be introduced into the chamber 1 by opening the setting gas introduction path set for one processing step.
  • the open / close valves V1 to V6 and the electromagnetic open / close valve V7 provided in any of the set gas supply sources 14 to 19 are driven to open, and the introduction path 7 and the set gas supply path are connected to each other.
  • Introduction can be performed (step S21).
  • the set gas amount can be introduced based on the measurement signal from the gas flow meter FM (step S22).
  • the opened electromagnetic on-off valve is driven to close, and the set gas introduction path is closed (step S23).
  • a plurality of types of gas introduction can be executed, and it is determined whether or not the next different type of gas introduction is set after the introduction of one type of gas (step S24).
  • the other setting gas introduction process is repeated (steps S21 to S23).
  • the electromagnetic opening / closing valve V7 is driven to close, and the gas introduction process ends (step S25).
  • FIG. 9 shows an initial setting process necessary for executing the high frequency / high voltage pulse application process (step S5).
  • This initial setting process can be executed when the initialization process is executed by the control unit 2 which is executed when the plasma process is started.
  • FIG. 10 shows a schematic configuration of the application processing unit of the control unit 20 for executing and controlling the high frequency / high voltage pulse application processing
  • FIG. 11 shows an application control timing chart by the application processing unit.
  • the period T1 is obtained and stored in a predetermined area of the RAM 23 (steps S61 and S62).
  • T3 T2 + Tp
  • these times may be input and set as application elements.
  • the control unit 20 has an application processing unit shown in FIG. 10 for sequence control of the high frequency / high voltage pulse application processing.
  • the application processing unit includes a counter configuration unit for sequence control.
  • the counter configuration unit includes a first counter unit including a counter input unit 40, a high-speed counter 41 (referred to as a high-speed counter C0), and a high-speed counter setting unit 42.
  • the output switch signal R0 of the first counter means is supplied to the RF power source 2 through the relay board 24 and can be input to the counter input section 43 through the branch line 46 of the relay board 24.
  • the output switch signal R1 of the second counter means is given to the high voltage pulse generator 3 via the relay substrate 24.
  • the counter input unit 40 can output the internal clock 47 from the control unit 20 to the high-speed counter C0.
  • the counter input unit 43 can receive the output switch signal R0 in synchronization with the internal clock 49 from the control unit 20 and output it to the high-speed counter C1.
  • the high-speed counters C0 and C1 are constituted by counters for measuring high-speed input signals that cannot be counted by a counter instruction.
  • the high-speed counter setting unit 42 includes a setting storage unit 48 that stores the output timing (one cycle time T0 and cycle T1) of the high-speed counter C0.
  • the high-speed counter setting unit 45 includes a setting storage unit 50 that stores the output timing (high voltage pulse application timing T2 and time T3) of the high-speed counter C1.
  • the high-speed counter setting units 42 and 45 respectively use the timer monitoring function of the control unit 20 to monitor the arrival of the set time in the setting storage units 48 and 50 and perform ON / OFF control of the output switches of the high-speed counters C0 and C1. It can be carried out.
  • the first and second counter means are configured using the memory area of the RAM 23.
  • the counting function of the first and second counter means may be constituted by a counter externally attached to the control unit 20.
  • the first and second counter means having the high speed counter and the high speed counter setting unit described above depend on the scan time. Smooth pulse output control.
  • not only the first and second counter means, but also timing generating means having a function capable of generating output timing in the RF power source 2 and the high voltage pulse generator 3 can be used.
  • FIG. 12 shows an outline of the high frequency / high pressure pulse application process (step S5).
  • the pulse timing data necessary for applying the RF output and the high voltage pulse set in the processing step to be executed is acquired and set in the work area of the RAM 23 (step S30).
  • the application control process by the application control unit is executed for the set process time, and the plasma process is performed by the process step (step S31).
  • the application control process is terminated when the setting process time has elapsed, the pulse timing data is reset, and the application process for the process steps is completed (steps S32 and S33).
  • step S31 show details of the application control process
  • the application control process is started after the pulse timing data setting process (step S30) (step S111).
  • the processing time is measured by the timer function of the CPU 21, and the timer function is activated by the start of execution of the application control process.
  • the details of the application control process will be described with reference to FIGS. 11, 13, and 14.
  • FIG. 11 schematically shows the RF output waveform Wr and the high voltage pulse waveform Wp that are actually applied.
  • FIG. 17 shows measured waveforms of the RF output waveform Wr and the high voltage pulse waveform Wp.
  • the frequency of the RF power source used for the actual measurement in FIG. 17 is 13.56 MHz.
  • FIG. 11 (11B), (11C), (11D), (11E), and (11F) in FIG. 11 are the high-speed counter C0, the output switch signal R0, the external signal capture at the counter input unit 43, the high-speed counter C1, and the output switch signal, respectively.
  • the operation timing of R1 is shown.
  • the high-speed counter C0 is turned on and starts counting (step S112).
  • the output switch signal R0 Can be output (steps S113 and S114).
  • the output switch signal R0 is turned off (steps S115 and S116), and the high-speed counter C0. Is reset (step S117).
  • the output switch signal R0 is externally output to the counter input unit 43 via the relay board 24 and input to the counter input unit 43.
  • the counter input unit 43 resets the high speed counter C1 at the falling timing P4 of the input output switch signal R0 and starts counting (steps S118 to S120).
  • the output switch signal R1 is turned on (steps S121 and S122).
  • the output switch signal R1 is turned off (steps S123 and S124), and the high-speed counter C1 Is reset (step S125).
  • the output switch signal R1 for turning on / off the output of the high voltage pulse generator 3 is generated synchronously corresponding to one RF output and output via the relay board 24, and the output switch signal Depending on the ON / OFF time of R1, the high voltage pulse output of the high voltage pulse generator 3 can be supplied to the conductor 6 via the superimposing device 4.
  • the one RF output and high voltage pulse application processing (steps S111 to S125) by the output switch signals R0 and R1 is repeatedly executed until the set processing time elapses.
  • the application process ends (step S126).
  • FIG. 15 schematically shows an execution processing example of plasma processing performed by applying an RF output and a high voltage pulse to the workpiece W by the application control processing.
  • the application control unit and the superimposing device 4 shown in FIG. 15 are schematically shows an execution processing example of plasma processing performed by applying an RF output and a high voltage pulse to the workpiece W by the application control processing.
  • the application control unit and the superimposing device 4 shown in FIG. 15 are schematically shows an execution processing example of plasma processing performed by applying an RF output and a high voltage pulse to the workpiece W by the application control processing.
  • FIG. 15A in FIG. 15 shows the state in the chamber 1 where the RF output and the high voltage pulse are not applied.
  • FIG. 15B shows an RF output application state.
  • FIG. 15C shows the state in the chamber 1 before the RF output is turned off and the high voltage pulse is applied.
  • FIG. 15D shows the application state when a high voltage pulse is applied.
  • the process PS1 shifts from (15A) to (15B)
  • the process PS2 shifts from (15B) to (15C)
  • the process PS3 shifts from (15C) to (15D)
  • the process PS5 that shifts from (15C) to (15B
  • the processes PS2 to PS5 are repeatedly executed until the process time elapses.
  • the plasma P is generated around the workpiece W by the application of the RF output.
  • a self-biased sheath (electrostatic sheath) 61 is formed at the boundary between the plasma P and the workpiece W.
  • the sheath 61 around the workpiece W disappears and the plasma P drifts around the workpiece W (15C).
  • the sheath 62 is formed, and the plasma around the workpiece W is drawn to the surface side of the workpiece W by the high voltage pulse and is included in the processing gas. It is possible to perform ion implantation and film formation using the elements present.
  • the afterglow is a plasma state in a region where ionized electrons and ions try to return to the original state.
  • the electron temperature is lowered and the plasma density is also lowered, so that, for example, effective radicals are generated in the DLC film formation.
  • the plasma processing apparatus uses an RF power source 2 and a high voltage generator 3 to apply an RF output and a high voltage pulse through a conductor 6 electrically connected to a work W installed in the chamber 1. Is applied to the workpiece W, and the plasma processing conditions including at least the RF output and / or the application mode of the high voltage pulse are input and stored in the RAM 23 by the input means including the touch panel 27. After introducing the processing gas into the chamber 1, during the set processing time, application control by the applying means is performed according to the set application mode, and the RF output and the high voltage pulse are set based on the set and stored application mode. Based on the plasma processing method of performing application control, execution control of plasma processing on the workpiece W can be performed.
  • the present embodiment by storing and setting a desired application mode, it is possible to control the execution of plasma processing according to various processing specifications, so a plasma processing apparatus corresponding to various processing specifications can be provided. Without using it, a single plasma processing apparatus can perform a wide range of plasma processing, and the equipment cost and processing cost can be greatly reduced.
  • FIG. 19 shows the setting contents of the setting parameters for each processing specification suitable for the plasma processing apparatus according to the present invention.
  • the settings shown in FIG. 19 are data obtained from the results of performing plasma processing experiments on various processing specifications.
  • (19A) to (19D) in FIG. 19 show processing specifications for bombardment (or sputtering), silicon film formation, gradient layer formation, and deposition layer formation, respectively.
  • processing specifications for bombardment (or sputtering), silicon film formation, gradient layer formation, and deposition layer formation, respectively.
  • pulse timings such as repetition frequency, gas pressure at the time of introduction of the processing gas, RF power and high voltage pulse voltage
  • first application modes and second application modes are set and stored in the RAM 23 according to the execution order, and the plasma is stored.
  • processing was performed after surface modification (sputter cleaning) of the workpiece was performed by application control according to the first application mode, it was contained in the introduced gas with respect to the workpiece W by application control according to the second application mode.
  • Component deposition or ion implantation can be performed. Therefore, according to the present invention, not only a single type of plasma processing but also a plurality of processing steps such as surface modification, deposition processing (or ion implantation processing), and the like can be performed without using separate plasma processing apparatuses. Can be performed while being installed in the chamber 1, and not only the equipment cost but also the processing costs such as working time and processing time required for each processing step can be greatly reduced.
  • the plasma processing method according to the present invention is not limited to the six processing gases of the embodiment, and can be automatically introduced into the chamber 1 by installing five or less or seven or more processing gas supply sources. it can. In addition to the six processing gases, various processing gases can be used according to the plasma processing specifications.
  • Ar argon
  • H 2 hydrogen
  • the effect can be obtained with the specification of H 2 alone.
  • an inert gas other than Ar He (helium), Ne (neon), Kr (krypton), Xe (xenon), or a combination of these inert gas and hydrogen can be used.
  • O 2 oxygen
  • the silicon (Si) film formation processing specifications include, for example, tetraethoxysilane TEOS ((C 2 H 5 O) 4 Si), tetramethoxysilane TMOS ((CH 3 O) 4 Si), tetramethyl Silane TMS ((CH 3 ) 4 Si) or the like may be used, and preferably HMDSO or TMS can be used.
  • the processing specifications for the formation of the inclined layer or deposition layer include, for example, hydrocarbon gases such as methane, ethane, propane, butane, ethylene, and acetylene, saturated chain hydrocarbons such as pentane, hexane, heptane, octane, and nonane, cyclohexane. Cyclic saturated hydrocarbons such as pentane, cyclohexane and cyclooctane, and aromatic hydrocarbons such as benzene, toluene and xylene can be used as the carbon source, and preferably methane, acetylene and toluene can be used. Ar, H 2 or the like may be used as the adjustment gas.
  • hydrocarbon gases such as methane, ethane, propane, butane, ethylene, and acetylene
  • saturated chain hydrocarbons such as pentane, hexane, heptane, octane
  • doping treatment such as ion implantation
  • organic metal used for adding conductivity and other characteristics for example, trimethoxyborane ((CH 3 O) 3 B), triethoxyborane ((C 2 H 5 O) 3 B), tri-i-propoxyaluminum (Al (Oi-C 3 H 7 ) 3 ), tetra-i-propoxy titanium (Ti (Oi-C 3 H 7 ) 3 ), Tetrakis (dimethylamino) titanium (Ti ((CH 3 ) 2 N) 4 ), tetra-n-butoxyzirconium (Zr (OCH 2 CH 2 CH 2 CH 3 ) 4 ), pentaethoxyniobium (Nb (OC 2 H 5) 5 ), pentaethoxy tantalum (Ta (OC 2 H 5 ) 5 ), etc.
  • trimethoxyborane ((CH 3 O) 3 B)
  • triethoxyborane (C 2 H 5 O) 3 B) tri
  • DLC diamond-like carbon

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Electromagnetism (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Plasma Technology (AREA)
PCT/JP2016/081259 2016-03-23 2016-10-21 プラズマ処理方法及びプラズマ処理装置 WO2017163472A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016-058223 2016-03-23
JP2016058223A JP6703425B2 (ja) 2016-03-23 2016-03-23 プラズマ処理方法及びプラズマ処理装置

Publications (1)

Publication Number Publication Date
WO2017163472A1 true WO2017163472A1 (ja) 2017-09-28

Family

ID=59901047

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2016/081259 WO2017163472A1 (ja) 2016-03-23 2016-10-21 プラズマ処理方法及びプラズマ処理装置

Country Status (3)

Country Link
JP (1) JP6703425B2 (zh)
TW (1) TWI629704B (zh)
WO (1) WO2017163472A1 (zh)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20200072557A (ko) * 2017-12-27 2020-06-22 매슨 테크놀로지 인크 플라즈마 처리 장치 및 방법
KR102141684B1 (ko) 2018-08-24 2020-09-14 한국원자력연구원 전류 펄스를 제어하는 모듈레이터 및 그 방법

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001026887A (ja) * 1999-07-12 2001-01-30 Agency Of Ind Science & Technol 表面改質方法及び表面改質装置
JP2004260159A (ja) * 2003-02-07 2004-09-16 Tokyo Electron Ltd プラズマ処理装置、リング部材およびプラズマ処理方法
JP2012060104A (ja) * 2010-08-11 2012-03-22 Toshiba Corp 電源制御装置、プラズマ処理装置、及びプラズマ処理方法

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3186689B2 (ja) * 1998-03-27 2001-07-11 株式会社日立製作所 プラズマ処理方法およびその装置
JP2003328137A (ja) * 2002-05-10 2003-11-19 Mitsubishi Heavy Ind Ltd 成膜装置
JP3998624B2 (ja) * 2003-10-09 2007-10-31 Ｎｅｃエレクトロニクス株式会社 パルス幅変調波形生成方法及び装置
CN1973363B (zh) * 2004-06-21 2011-09-14 东京毅力科创株式会社 等离子体处理装置和方法
JP2007283726A (ja) * 2006-04-20 2007-11-01 Bridgestone Corp 成形体及びその製造方法
JP5319150B2 (ja) * 2008-03-31 2013-10-16 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法及びコンピュータ読み取り可能な記憶媒体
JP5694721B2 (ja) * 2009-10-27 2015-04-01 東京エレクトロン株式会社 プラズマ処理装置及びプラズマ処理方法
JP5977509B2 (ja) * 2011-12-09 2016-08-24 東京エレクトロン株式会社 プラズマ処理方法及びプラズマ処理装置
JP5984508B2 (ja) * 2012-05-25 2016-09-06 ルネサスエレクトロニクス株式会社 半導体データ処理装置及びエンジン制御装置
JP2014069000A (ja) * 2012-10-01 2014-04-21 Gunma Prefecture 生体内摺動部材及びその表面処理方法
JP2015136196A (ja) * 2014-01-16 2015-07-27 株式会社リコー インバータ装置及びプラズマ発生装置
WO2015199111A1 (ja) * 2014-06-25 2015-12-30 株式会社日立国際電気 半導体装置の製造方法、基板処理装置およびプログラム
JP2016021344A (ja) * 2014-07-15 2016-02-04 中外炉工業株式会社 プラズマ処理装置、及びそのプラズマ処理装置を用いたプラズマ処理方法
US9548188B2 (en) * 2014-07-30 2017-01-17 Lam Research Corporation Method of conditioning vacuum chamber of semiconductor substrate processing apparatus
JP6014941B2 (ja) * 2015-07-31 2016-10-26 地方独立行政法人山口県産業技術センター プラズマ処理装置及び成膜方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001026887A (ja) * 1999-07-12 2001-01-30 Agency Of Ind Science & Technol 表面改質方法及び表面改質装置
JP2004260159A (ja) * 2003-02-07 2004-09-16 Tokyo Electron Ltd プラズマ処理装置、リング部材およびプラズマ処理方法
JP2012060104A (ja) * 2010-08-11 2012-03-22 Toshiba Corp 電源制御装置、プラズマ処理装置、及びプラズマ処理方法

Also Published As

Publication number Publication date
TW201735088A (zh) 2017-10-01
JP6703425B2 (ja) 2020-06-03
JP2017174586A (ja) 2017-09-28
TWI629704B (zh) 2018-07-11

Similar Documents

Publication Publication Date Title
TWI579912B (zh) 電漿處理裝置
US8933629B2 (en) Method for controlling ion energy in radio frequency plasmas
KR100865054B1 (ko) 스위칭 방식 균일성 제어
TWI464282B (zh) 具有高能脈衝磁管噴濺之射頻基板偏壓
KR102265231B1 (ko) 플라즈마 처리 장치
TWI576915B (zh) 電漿處理方法
US9175377B2 (en) Film forming apparatus and film forming method
US9349575B2 (en) Remote plasma system having self-management function and self management method of the same
JP6410622B2 (ja) プラズマ処理装置及び成膜方法
WO2017163472A1 (ja) プラズマ処理方法及びプラズマ処理装置
JP2012060104A (ja) 電源制御装置、プラズマ処理装置、及びプラズマ処理方法
KR101976254B1 (ko) 성막 장치 및 성막 방법
JP5595134B2 (ja) ドライエッチング装置及びドライエッチング方法
WO1998037256A1 (fr) Dispositif d'alimentation electrique pour pulverisation cathodique et dispositif de pulverisation l'utilisant
JP5370462B2 (ja) イオン源電極のクリーニング装置
JP2021530864A (ja) 無線周波数パルス整合方法およびそのデバイス、ならびに、パルスプラズマ生成システム
Tichý et al. Langmuir probe diagnostics of a plasma jet system
US10008369B2 (en) Cyclical plasma etching
KR102498944B1 (ko) 유기 재료들의 자가 제한 에칭을 수행하기 위한 프로세스
Miao et al. Mode transition and related discharge phenomena of a tube plasma source operating in low-pressure pure nitrogen atmosphere
KR20140090324A (ko) 기판 처리 장치 및 기판 처리 방법
JP4711543B2 (ja) 放電を利用した処理装置における放電検出の方法と装置
Virostko et al. Ion current to a substrate in the pulsed dc hollow cathode plasma jet deposition system
Granda-Gutiérrez et al. VI curves and plasma parameters in a high density DC glow discharge generated by a current-source
WO2020105367A1 (ja) 金属化合物膜の成膜方法及び反応性スパッタ装置

Legal Events

Date Code Title Description
NENP Non-entry into the national phase

Ref country code: DE

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 16895495

Country of ref document: EP

Kind code of ref document: A1

122 Ep: pct application non-entry in european phase

Ref document number: 16895495

Country of ref document: EP

Kind code of ref document: A1