WO2017158757A1 - Light emitting device, electronic apparatus, and method for manufacturing light emitting device - Google Patents

Light emitting device, electronic apparatus, and method for manufacturing light emitting device Download PDF

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Publication number
WO2017158757A1
WO2017158757A1 PCT/JP2016/058315 JP2016058315W WO2017158757A1 WO 2017158757 A1 WO2017158757 A1 WO 2017158757A1 JP 2016058315 W JP2016058315 W JP 2016058315W WO 2017158757 A1 WO2017158757 A1 WO 2017158757A1
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WIPO (PCT)
Prior art keywords
light emitting
substrate
emitting device
electrode
layer
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PCT/JP2016/058315
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French (fr)
Japanese (ja)
Inventor
鈴木　健二
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パイオニア株式会社
東北パイオニア株式会社
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Application filed by パイオニア株式会社, 東北パイオニア株式会社 filed Critical パイオニア株式会社
Priority to PCT/JP2016/058315 priority Critical patent/WO2017158757A1/en
Priority to JP2018505134A priority patent/JP6776329B2/en
Publication of WO2017158757A1 publication Critical patent/WO2017158757A1/en

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    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details

Definitions

  • the present invention relates to a light emitting device, an electronic device, and a method for manufacturing the light emitting device.
  • the substrate of the light emitting device may be curved.
  • the light emitting device described in Patent Document 1 includes a substrate, a light emitting unit, and a protective layer.
  • the substrate has flexibility, and specifically includes a metal or an alloy.
  • the substrate has a first surface and a second surface. The second surface is on the opposite side of the first surface.
  • the light emitting unit is on the first surface of the substrate.
  • the protective layer is on the first surface of the substrate and covers the light emitting unit.
  • the protective layer has a glass layer. The substrate and the glass layer are convexly curved toward the outside of the first surface.
  • a glass substrate may be used for the substrate of the light emitting device.
  • a substance that deteriorates the light emitting portion for example, water
  • the lifetime of a light emission part is long.
  • the flexibility of the glass substrate is low. For this reason, when a glass substrate is used as the substrate of the light emitting device, it is difficult to curve the substrate with a large curvature.
  • An example of a problem to be solved by the present invention is to enable a substrate to be bent with a large curvature even when a glass substrate is used as a substrate of a light emitting device.
  • the invention described in claim 1 A light emitting device attached to a mounting surface, A substrate having a first surface and a second surface opposite to the first surface, and made of glass; A light-emitting unit that is on one of the first surface and the second surface and includes a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode; With The substrate has a rib mark on the first surface side, The light-emitting device is a light-emitting device attached to the attachment surface so that the substrate is convexly curved toward the outside of the second surface.
  • the invention described in claim 2 A substrate having a first surface and a second surface opposite to the first surface, and made of glass; A light-emitting unit that is on one of the first surface and the second surface and includes a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode; With The substrate has a rib mark on the first surface side, The substrate is a light emitting device that is curved convexly toward the outside of the second surface.
  • the invention according to claim 8 provides: A mounting surface; A light emitting device attached to the mounting surface; With The light emitting device A substrate having a first surface and a second surface opposite to the first surface, and made of glass; A light-emitting unit that is on one of the first surface and the second surface and includes a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode; With The substrate has a rib mark on the first surface side, The light-emitting device is an electronic device attached to the attachment surface so that the substrate is curved convexly toward the outside of the second surface.
  • the invention according to claim 9 is: A method of manufacturing a light emitting device attached to a mounting surface, A base material made of glass having a first surface and a second surface opposite to the first surface is prepared, and each of the first electrode, the second electrode, the first electrode, and the second electrode A step of forming a plurality of light emitting portions including an organic layer therebetween on one of the first surface and the second surface of the substrate; Forming a rib mark on the first surface side to separate the base material into a plurality of substrates so that each substrate has the light emitting part; and Including The light emitting device includes the substrate and the light emitting unit, The light-emitting device is a method for manufacturing a light-emitting device, wherein the substrate is attached to the attachment surface so that the substrate is convexly curved toward the outside of the second surface.
  • FIG. 4 is a diagram for explaining a manufacturing method of the light emitting device shown in FIGS. 1 to 3;
  • A) is a table showing the results of a bending strength test when the substrate shown in FIGS. 1 to 3 is convexly convex toward the outside of the second surface, and
  • FIGS. 5 is a table showing the results of a bending strength test in the case where the substrate shown in (1) is curved convexly toward the outside of the first surface.
  • FIG. 9 is a view for explaining a method of manufacturing the light emitting device shown in FIGS. 1 is a plan view of a light emitting device according to Example 1.
  • FIG. It is the figure which expanded (alpha) shown in FIG. It is the figure which removed the insulating layer and the partition from FIG.
  • FIG. 12 is a cross-sectional view taken along the line AA in FIG. 6 is a plan view of a light emitting device according to Example 2.
  • FIG. It It is the figure which removed the 2nd conductive layer from FIG. It is the figure which removed the organic layer from FIG. It is AA sectional drawing of FIG.
  • FIG. 1 is a plan view of a light emitting device 10 according to the first embodiment.
  • FIG. 2 is a side view of the light emitting device 10 shown in FIG.
  • FIG. 3 is a diagram illustrating the electronic apparatus according to the first embodiment.
  • the light emitting device 10 includes a substrate 100 and a light emitting region 141.
  • the substrate 100 has a first surface 102 and a second surface 104.
  • the second surface 104 is on the opposite side of the first surface 102.
  • the substrate 100 is made of glass.
  • the light emitting region 141 is on the first surface 102 of the substrate 100.
  • the light emitting region 141 includes a light emitting unit 140.
  • the light emitting unit 140 includes a first electrode 110, an organic layer 120, and a second electrode 130.
  • the organic layer 120 is between the first electrode 110 and the second electrode 130.
  • the substrate 100 has a rib mark 106.
  • the rib mark 106 is on the first surface 102 side. As shown in FIG. 3, the light emitting device 10 is attached to the attachment surface 22 so that the substrate 100 is curved convexly toward the outside of the second surface 104. Details will be described below.
  • the substrate 100 is a glass substrate.
  • the shape of the first surface 102 of the substrate 100 is a rectangle. Specifically, the first surface 102 has a first side 102a, a second side 102b, a third side 102c, and a fourth side 102d.
  • the second side 102b is on the opposite side of the first side 102a.
  • the third side 102c is between the first side 102a and the second side 102b.
  • the fourth side 102d is on the opposite side of the third side 102c.
  • the thickness T1 of the substrate 100 is, for example, not less than 40 ⁇ m and not more than 200 ⁇ m.
  • the substrate 100 has a rib mark 106.
  • the rib mark 106 is on the first surface 102 side of the substrate 100.
  • the rib mark 106 is located along each of the first side 102a, the second side 102b, the third side 102c, and the fourth side 102d.
  • T ⁇ b> 1 indicates the thickness of the substrate 100
  • T ⁇ b> 2 indicates the depth of the rib mark 106.
  • T2 / T1 ⁇ 100 is 20.0% or more and 30.0% or less, preferably 22.5% or more and 27.5% or less. That is, the depth of the rib mark is 20.0% to 30.0%, preferably 22.5% to 27.5% of the thickness of the substrate.
  • the light emitting area 141 is on the first surface 102. As shown in FIGS. 10 to 17 described later, the light emitting region 141 includes a light emitting unit 140. In the example shown in FIG. 1, the shape of the light emitting region 141 is a rectangle.
  • the electronic device includes a light emitting device 10 and a base material 20.
  • the light emitting device 10 illustrated in FIG. 3 is the light emitting device 10 illustrated in FIGS. 1 and 2.
  • the base material 20 has a mounting surface 22.
  • the mounting surface 22 is convexly curved toward the outside.
  • the light emitting device 10 is attached to the base material 20 so that the first surface 102 faces the attachment surface 22 with the light emitting region 141 interposed therebetween.
  • the substrate 100 is curved convexly toward the outside of the second surface 104.
  • FIG. 4 is a diagram for explaining a method of manufacturing the light emitting device 10 shown in FIGS.
  • the base material 100a is prepared.
  • the base material 100 a has a first surface 102 and a second surface 104.
  • a plurality of light emitting regions 141 are formed on the first surface 102 of the substrate 100a.
  • a scribe line 510 is formed on the first surface 102 of the base material 100 a by the wheel cutter 500.
  • the rib mark 106 is formed along the scribe line 510.
  • the depth T2 (FIG. 2) of the rib mark 106 can be adjusted by the depth of the scribe line 510.
  • the base material 100a is divided along the scribe line 510 by applying, for example, a human force to the plurality of substrates 100.
  • T2 / T1 ⁇ 100 is 20.0% or more and 30.0% or less, preferably 22.5% or more and 27.5% or less.
  • T2 / T1 ⁇ 100 is small, the depth at which the force is divided is increased, so that there is a high possibility that a minute chip is generated on the second surface side of the scribe line 510. When it is bent, cracks due to the minute chips are likely to occur, which causes a decrease in the bending strength of the substrate 100.
  • a scribe line 510 is formed on the first surface 102 of the substrate 100 by the wheel cutter 500, and the possibility that the substrate 100 is divided before applying a force is increased. For this reason, the handleability of a process falls. In this way, a plurality of light emitting devices 10 (FIGS. 1 to 3) are manufactured.
  • FIG. 5A is a table showing the results of a bending strength test in the case where the substrate 100 shown in FIGS. 1 to 3 is curved convexly toward the outer side of the second surface 104.
  • FIG. 5B is a table showing the results of a bending strength test in the case where the substrate 100 shown in FIGS. 1 to 3 is curved convexly toward the outside of the first surface 102.
  • ten substrates 100 were tested.
  • the thickness of the substrate 100 was 120 ⁇ m.
  • the depth T2 of the rib mark 106 is 22.5% or more and 27.5% or less of the thickness T1 of the substrate 100.
  • a load was applied to the first surface 102 side so that the substrate 100 was curved convexly toward the outside of the second surface 104. The load when the substrate 100 was broken and the displacement of the substrate 100 when the substrate 100 was broken were measured. Based on the measured displacement, the curvature radius of the substrate 100 when the substrate 100 was cracked was calculated.
  • 10 substrates 100 were tested.
  • the thickness of the substrate 100 was 120 ⁇ m.
  • the depth T2 of the rib mark 106 is 22.5% or more and 27.5% or less of the thickness T1 of the substrate 100.
  • a load was applied to the second surface 104 side so that the substrate 100 curved convexly toward the outside of the first surface 102. The load when the substrate 100 was broken and the displacement of the substrate 100 when the substrate 100 was broken were measured. Based on the measured displacement, the curvature radius of the substrate 100 when the substrate 100 was cracked was calculated.
  • the average radius of curvature when the substrate 100 was convexly curved toward the outside of the second surface 104 was 13.89 mm.
  • the average radius of curvature when the substrate 100 is convexly convex toward the outside of the first surface 102 was 21.57 mm. From these comparisons, the bending strength of the substrate 100 is greater when the substrate 100 is curved convex toward the outside of the second surface 104 than when the substrate 100 is curved convex toward the outside of the first surface 102. It is also expensive.
  • the substrate 100 is made of glass.
  • the substrate 100 has a rib mark 106 on the first surface 102 side.
  • the light emitting device 10 is attached to the attachment surface 22 so that the substrate 100 is convexly curved toward the outside of the second surface 104.
  • the bending strength of the substrate 100 is high when the substrate 100 is curved convexly toward the outside of the second surface 104.
  • substrate 100 can be curved with a big curvature.
  • the substrate 100 may not be curved as shown in FIG. 2, or may be curved as shown in FIG.
  • FIG. 6 is a plan view of the light emitting device 10 according to the second embodiment, and corresponds to FIG. 1 of the first embodiment.
  • FIG. 7 is a side view of the light emitting device 10 shown in FIG. 6 and corresponds to FIG. 2 of the first embodiment.
  • FIG. 8 is a diagram illustrating an electronic apparatus according to the second embodiment, and corresponds to FIG. 3 of the first embodiment.
  • the light emitting device 10 according to the present embodiment is the same as the light emitting device 10 according to the first embodiment except for the following points.
  • the light emitting region 141 may be on the second surface 104.
  • the substrate 100 has a rib mark 106.
  • the rib mark 106 is on the first surface 102 side.
  • the light emitting device 10 is attached to the base material 20 so that the light emitting region 141 faces the attachment surface 22 with the substrate 100 interposed therebetween. Thereby, the substrate 100 is curved convexly toward the outside of the second surface 104.
  • FIG. 9 is a diagram for explaining a method of manufacturing the light emitting device 10 shown in FIGS.
  • a plurality of light emitting regions 141 are formed on the second surface 104 of the substrate 100a.
  • a scribe line 510 is formed on the first surface 102 of the substrate 100 by the wheel cutter 500.
  • the rib mark 106 is formed along the scribe line 510.
  • the depth T2 of the rib mark 106 (FIG. 7) can be adjusted by the depth of the scribe line 510.
  • the base material 100 a is separated into a plurality of substrates 100 along the scribe line 510. In this way, a plurality of light emitting devices 10 (FIGS. 6 to 8) are manufactured.
  • the substrate 100 can be bent with a large curvature, as in the first embodiment.
  • FIG. 10 is a plan view of the light emitting device 10 according to the first embodiment.
  • FIG. 11 is an enlarged view of ⁇ shown in FIG. 12 is a diagram in which the insulating layer 150 and the partition wall 160 are removed from FIG. 13 is a cross-sectional view taken along the line AA in FIG.
  • the light emitting device 10 is a display.
  • the light emitting region 141 is on the first surface 102 of the substrate 100.
  • the light emitting device 10 may be either bottom emission or top emission.
  • the light emitting device 10 is top emission, light from the plurality of light emitting units 140 is emitted from the second surface 104 of the substrate 100.
  • the light emitting device 10 is top emission, the light from the plurality of light emitting units 140 is emitted from above the first surface 102 of the substrate 100.
  • the light emitting device 10 includes a substrate 100, a light emitting region 141 (a plurality of light emitting portions 140), an insulating layer 150, a plurality of partition walls 160, a covering layer 170, a plurality of organic layers 220, a plurality of second conductive layers 230, and a plurality of conductive layers. 302 (first terminal 112, first wiring 114 and first conductive layer 210) and a plurality of conductive layers 304 (second terminal 132 and second wiring 134).
  • each conductive layer 302 has a first terminal 112, a first wiring 114, and a first conductive layer 210.
  • the first terminal 112 is one end of the conductive layer 302.
  • the first conductive layer 210 is a part of the conductive layer 302.
  • the first wiring 114 is a part of the conductive layer 302 and is between the first terminal 112 and the first conductive layer 210.
  • Each conductive layer 304 has a second terminal 132 and a second wiring 134.
  • the second terminal 132 is one end of the conductive layer 304.
  • the second wiring 134 is a part of the conductive layer 304.
  • a potential is applied to the first terminal 112.
  • the potential of the first terminal 112 is applied to the first conductive layer 210 through the first wiring 114.
  • a potential is applied to the second terminal 132.
  • the potential of the second terminal 132 is applied to the second conductive layer 230 through the second wiring 134.
  • the electric resistance of the conductive layer 180 is lower than the electric resistance of the conductive layer 302 and the electric resistance of the conductive layer 304. Thereby, a voltage drop between the first terminal 112 and the first conductive layer 210 and a voltage drop between the second terminal 132 and the second conductive layer 230 can be suppressed.
  • the conductive layer 180 is positioned so as not to overlap the light emitting unit 140. For this reason, the conductive layer 180 does not need to have translucency.
  • the conductive layer 180 is made of, for example, Al or Ag.
  • the conductive layer 180 includes, for example, a Mo alloy layer on the top surface of the conductive layer 302 or the top surface of the conductive layer 304, an Al alloy layer on the Mo alloy layer, and a Mo alloy layer on the Al alloy layer. Also good.
  • the plurality of first conductive layers 210 are arranged in the first direction (Y direction in the figure).
  • Each first conductive layer 210 extends in a second direction (specifically, the X direction in the drawing) that intersects the first direction (specifically, orthogonal to the first direction).
  • the insulating layer 150 is on the first surface 102 and the first conductive layer 210 of the substrate 100.
  • the insulating layer 150 includes a photosensitive resin (for example, polyimide).
  • the insulating layer 150 has a plurality of openings 152.
  • the plurality of openings 152 are arranged in an m ⁇ n matrix including m rows arranged in the second direction (X direction in the drawing) and n columns arranged in the first direction (Y direction in the drawing). Yes.
  • the planar shape of each opening 152 is a rectangle. As shown in FIG.
  • each opening 152 in each opening 152, a part of the first conductive layer 210 (first electrode 110) and a part of the second conductive layer 230 (second electrode 130) overlap each other. Thereby, the region surrounded by the edge of the opening 152 functions as the light emitting unit 140. That is, the insulating layer 150 defines the light emitting unit 140.
  • the insulating layer 150 has an opening 154.
  • the second conductive layer 230 is connected to the second wiring 134 through the opening 154.
  • the partition 160 is on the insulating layer 150.
  • the partition 160 includes a photosensitive resin (for example, polyimide).
  • the plurality of partition walls 160 are arranged in the second direction (X direction in the figure).
  • Each partition wall 160 extends in the first direction (Y direction in the figure).
  • the width of the upper surface of the partition wall 160 is wider than the width of the lower surface of the partition wall 160 in the cross section perpendicular to the first direction (the Y direction in FIGS. 10 to 12). More specifically, in the cross section perpendicular to the first direction (the Y direction in FIGS. 10 to 12), the partition wall 160 has a first side surface and a second side surface.
  • the second side surface is on the opposite side of the first inner surface.
  • the first side surface of the partition wall 160 is inclined so that the upper end of the first side surface is located outside the lower end of the first side surface.
  • the second side surface of the partition wall 160 is inclined so that the upper end of the second side surface is located outside the lower end of the second side surface.
  • the organic layer 220 is on the first surface 102 of the substrate 100, on the first conductive layer 210, and on the insulating layer 150.
  • the plurality of organic layers 220 are arranged in the second direction (the X direction in FIGS. 10 to 12).
  • the organic layers 220 adjacent to each other are opposed to each other with the partition wall 160 interposed therebetween.
  • a part of the organic layer 220 overlaps a part of the first conductive layer 210 (first electrode 110). This part of the organic layer 220 functions as the organic layer 120 of the light emitting unit 140.
  • the organic layer 222 is on the upper surface of the partition wall 160.
  • the material included in the organic layer 222 is the same as the material included in the organic layer 220.
  • the organic layer 220 and the organic layer 222 are formed by depositing an organic layer on the first surface 102 and the partition 160 of the substrate 100. In this case, the organic layer is separated into the organic layer 220 and the organic layer 222 by the partition 160.
  • the organic layer 220 has, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer.
  • the total thickness of the organic layer 220 is, for example, not less than 50 nm and not more than 200 nm. Holes move in the hole injection layer and the hole transport layer.
  • the thickness of the hole injection layer is, for example, not less than 50 nm and not more than 100 nm.
  • the thickness of the hole transport layer is thinner than the thickness of the hole injection layer.
  • the thickness of the hole transport layer is, for example, 20 nm or more and 50 nm or less.
  • the color of light from the light emitting layer is, for example, red, green, or blue.
  • electrons are transported.
  • the thickness of the electron transport layer is, for example, 5 nm or more and 100 nm or less.
  • the electron injection layer is made of an alkali metal compound (for example, LiF), a metal oxide (for example, aluminum oxide) or a metal complex (for example, lithium 8-hydroxyquinolate (Liq)).
  • the thickness of the electron injection layer is, for example, not less than 0.1 nm and not more than 10 nm.
  • One of the hole injection layer and the hole transport layer may be omitted.
  • One of the electron transport layer and the electron injection layer may be omitted.
  • the hole injection layer, hole transport layer, light emitting layer, electron transport layer, and electron injection layer are formed by, for example, a coating process. Specifically, for example, the hole injection layer, the hole transport layer, and the light emitting layer are formed by a coating process.
  • the electron transport layer and the electron injection layer are formed by vapor deposition.
  • each second conductive layer 230 is on the organic layer 120. As shown in FIG. 11, the plurality of second conductive layers 230 are arranged in the second direction (X direction in the figure). Each second conductive layer 230 extends in the first direction (Y direction in the figure). The second conductive layers 230 adjacent to each other face each other across the partition wall 160. As shown in FIG. 13, a part of the second conductive layer 230 overlaps a part of the first conductive layer 210 (first electrode 110). This part of the second conductive layer 230 functions as the second electrode 130 of the light emitting unit 140.
  • the second conductive layer 232 is on the upper surface of the partition wall 160.
  • the material included in the second conductive layer 232 is the same as the material included in the second conductive layer 230.
  • the second conductive layer 230 and the second conductive layer 232 are formed by depositing a conductive layer on the first surface 102 and the partition 160 of the substrate 100. In this case, the conductive layer is separated into the second conductive layer 230 and the second conductive layer 232 by the partition wall 160.
  • the first conductive layer 210 is a conductive layer having translucency. In this case, the second conductive layer 230 does not need to have translucency.
  • the second conductive layer 230 is a conductive layer having translucency. In this case, the first conductive layer 210 does not need to have translucency.
  • the first conductive layer 210 and the second conductive layer 230 are light-transmitting conductive layers
  • the first conductive layer 210 and the second conductive layer 230 include, for example, a metal oxide, and more specifically, for example, It contains ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IWZO (Indium Tungsten Zinc Oxide) or ZnO (Zinc Oxide).
  • the first conductive layer 210 and the second conductive layer 230 are non-translucent conductive layers
  • the first conductive layer 210 and the second conductive layer 230 include, for example, Al, Au, Ag, Pt, Mg, Sn, A metal selected from the first group consisting of Zn and In or an alloy of a metal selected from the first group is included.
  • the covering layer 170 covers the second conductive layer 230 and the plurality of partition walls 160. Thereby, the coating layer 170 seals the plurality of light emitting units 140 and the plurality of partition walls 160.
  • the covering layer 170 includes, for example, an insulating material, more specifically, for example, a metal oxide.
  • the covering layer 170 includes, for example, a titanium oxide layer and an aluminum oxide layer. In this case, the aluminum oxide layer is on the titanium oxide layer or below the titanium oxide layer.
  • the thickness of the covering layer 170 is, for example, not less than 50 nm and not more than 300 nm.
  • the covering layer 200 is formed by, for example, ALD (Atomic Layer Deposition).
  • the covering layer 170 may be formed by, for example, CVD (Chemical Vapor Deposition) or sputtering.
  • the covering layer 170 includes, for example, a SiO 2 layer or a SiN layer.
  • the film thickness of the coating layer 170 is, for example, not less than 10 nm and not more than 1000 nm.
  • the covering layer 170 may be covered with a resin layer.
  • the resin layer is provided to protect the covering layer 170.
  • the resin layer contains, for example, an epoxy resin or an acrylic resin.
  • the substrate 100 has the rib mark 106 on the first surface 102 side.
  • the light emitting region 141 (light emitting unit 140) is on the first surface 102 of the substrate 100.
  • the light emitting device 10 and the second surface 104 are attached to the attachment surface 22 (FIG. 3) so as to bend outwardly from the first side 102a to the second side 102b. For this reason, the board
  • the light emitting region 141 (light emitting unit 140) may be on the second surface 104 of the substrate 100.
  • FIG. 14 is a plan view of the light emitting device 10 according to the second embodiment.
  • FIG. 15 is a diagram in which the second conductive layer 230 is removed from FIG.
  • FIG. 16 is a diagram in which the organic layer 220 is removed from FIG. 17 is a cross-sectional view taken along the line AA in FIG.
  • the light emitting device 10 is a light emitting panel.
  • the light emitting region 141 (light emitting unit 140) is on the first surface 102 of the substrate 100.
  • the light emitting device 10 includes a substrate 100, a second terminal 132, an organic layer 220, a second conductive layer 230, and a conductive layer 302 (first electrode 110 and first terminal 112).
  • the light emitting unit 140 includes a first electrode 110, an organic layer 120, and a second electrode 130.
  • the organic layer 120 is on the first electrode 110.
  • the second electrode 130 is on the organic layer 120.
  • the first electrode 110 is a part of the conductive layer 302.
  • the first electrode 110 functions as an anode of the light emitting unit 140.
  • the conductive layer 302 is a transparent electrode having optical transparency. Light from the organic layer 120 is emitted to the outside through the first electrode 110.
  • the conductive layer 302 is made of a material containing metal, for example, a metal oxide, more specifically, for example, ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide).
  • the thickness of the first electrode 110 is, for example, not less than 10 nm and not more than 500 nm.
  • the organic layer 120 is a part of the organic layer 220, specifically, a portion overlapping the first electrode 110.
  • the organic layer 220 has, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer.
  • the second electrode 130 is a part of the second conductive layer 230, specifically, a part overlapping the first electrode 110.
  • the second electrode 130 functions as a cathode of the light emitting unit 140.
  • the second conductive layer 230 includes a metal layer made of a metal selected from the first group consisting of Al, Au, Ag, Pt, Sn, Zn, and In, or an alloy of a metal selected from the first group. It is out.
  • first terminals 112 and two second terminals 132 there are two first terminals 112 and two second terminals 132 on the substrate 100.
  • the two first terminals 112 are part of the conductive layer 302 and are on opposite sides of the first electrode 110.
  • One first terminal 112 is positioned along the third side 102c, and the other first terminal 112 is positioned along the fourth side 102d.
  • the two second terminals 132 are on opposite sides of the conductive layer 302.
  • One second terminal 132 is positioned along the first side 102a, and the other second terminal 132 is positioned along the second side 102b.
  • the first terminal 112 and the second terminal 132 are provided to supply power to the light emitting unit 140.
  • a conductive member such as a lead terminal or a bonding wire is connected to the first terminal 112 and the second terminal 132.
  • the substrate 100 has the rib mark 106 on the first surface 102 side.
  • the light emitting region 141 (light emitting unit 140) is on the first surface 102 of the substrate 100.
  • the light emitting device 10 and the second surface 104 are attached to the attachment surface 22 (FIG. 3) so as to bend outwardly from the first side 102a to the second side 102b. For this reason, the board
  • the light emitting region 141 (light emitting unit 140) may be on the second surface 104 of the substrate 100.

Abstract

A light emitting device (10) is provided with a substrate (100) and a light emitting region (141). The substrate (100) has a first surface (102) and a second surface (104). The second surface (104) is on the reverse side of the first surface (102). The substrate (100) is formed of glass. The light emitting region (141) is on the first surface (102) of the substrate (100). The substrate (100) has a rib mark (106). The rib mark (106) is on the first surface (102) side. The light emitting device (10) is attached to an attaching surface (22) such that the substrate (100) is bent to protrude toward the outer side of the second surface (104).

Description

発光装置、電子機器及び発光装置の製造方法LIGHT EMITTING DEVICE, ELECTRONIC DEVICE, AND METHOD FOR MANUFACTURING LIGHT EMITTING DEVICE
　本発明は、発光装置、電子機器及び発光装置の製造方法に関する。 The present invention relates to a light emitting device, an electronic device, and a method for manufacturing the light emitting device.
　湾曲した取付面に発光装置を取り付けるため、発光装置の基板を湾曲させることがある。例えば、特許文献１に記載の発光装置は、基板、発光部及び保護層を有している。基板は、可撓性を有し、具体的には金属又は合金を含んでいる。基板は、第１面及び第２面を有している。第２面は、第１面の反対側にある。発光部は、基板の第１面上にある。保護層は、基板の第１面上にあり、発光部を覆っている。保護層は、ガラス層を有している。基板及びガラス層は、第１面の外側に向かって凸に湾曲している。 In order to attach the light emitting device to the curved mounting surface, the substrate of the light emitting device may be curved. For example, the light emitting device described in Patent Document 1 includes a substrate, a light emitting unit, and a protective layer. The substrate has flexibility, and specifically includes a metal or an alloy. The substrate has a first surface and a second surface. The second surface is on the opposite side of the first surface. The light emitting unit is on the first surface of the substrate. The protective layer is on the first surface of the substrate and covers the light emitting unit. The protective layer has a glass layer. The substrate and the glass layer are convexly curved toward the outside of the first surface.
特開２０１３－１３４８０８号公報JP 2013-134808 A
　発光装置の基板にガラス基板を用いることがある。発光部を劣化させる物質（例えば、水）は、ガラス基板を透過しにくい。このため、ガラス基板を有する発光装置では、発光部の寿命が長い。一方、ガラス基板の可撓性は低い。このため、発光装置の基板にガラス基板を用いた場合、基板を大きな曲率で湾曲させることが難しい。 A glass substrate may be used for the substrate of the light emitting device. A substance that deteriorates the light emitting portion (for example, water) is difficult to pass through the glass substrate. For this reason, in the light-emitting device which has a glass substrate, the lifetime of a light emission part is long. On the other hand, the flexibility of the glass substrate is low. For this reason, when a glass substrate is used as the substrate of the light emitting device, it is difficult to curve the substrate with a large curvature.
　本発明が解決しようとする課題としては、発光装置の基板にガラス基板を用いても、基板を大きな曲率で湾曲させることを可能にすることが一例として挙げられる。 An example of a problem to be solved by the present invention is to enable a substrate to be bent with a large curvature even when a glass substrate is used as a substrate of a light emitting device.
　請求項１に記載の発明は、
　取付面に取り付けられる発光装置であって、
　第１面及び前記第１面とは反対側の第２面を有し、ガラスからなる基板と、
　前記第１面上又は前記第２面上の一方にあり、第１電極、第２電極及び前記第１電極と前記第２電極の間の有機層を含む発光部と、
を備え、
　前記基板は、前記第１面側にリブマークを有し、
　前記発光装置は、前記基板が前記第２面の外側に向かって凸に湾曲するように前記取付面に取り付けられる発光装置である。 The invention described in claim 1
A light emitting device attached to a mounting surface,
A substrate having a first surface and a second surface opposite to the first surface, and made of glass;
A light-emitting unit that is on one of the first surface and the second surface and includes a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode;
With
The substrate has a rib mark on the first surface side,
The light-emitting device is a light-emitting device attached to the attachment surface so that the substrate is convexly curved toward the outside of the second surface.
　請求項２に記載の発明は、
　第１面及び前記第１面とは反対側の第２面を有し、ガラスからなる基板と、
　前記第１面上又は前記第２面上の一方にあり、第１電極、第２電極及び前記第１電極と前記第２電極の間の有機層を含む発光部と、
を備え、
　前記基板は、前記第１面側にリブマークを有し、
　前記基板は、前記第２面の外側に向かって凸に湾曲している発光装置である。 The invention described in claim 2
A substrate having a first surface and a second surface opposite to the first surface, and made of glass;
A light-emitting unit that is on one of the first surface and the second surface and includes a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode;
With
The substrate has a rib mark on the first surface side,
The substrate is a light emitting device that is curved convexly toward the outside of the second surface.
　請求項８に記載の発明は、
　取付面と、
　前記取付面に取り付けられた発光装置と、
を備え、
　前記発光装置は、
　　第１面及び前記第１面とは反対側の第２面を有し、ガラスからなる基板と、
　　前記第１面上又は前記第２面上の一方にあり、第１電極、第２電極及び前記第１電極と前記第２電極の間の有機層を含む発光部と、
を備え、
　前記基板は、前記第１面側にリブマークを有し、
　前記発光装置は、前記基板が前記第２面の外側に向かって凸に湾曲するように前記取付面に取り付けられている電子機器である。 The invention according to claim 8 provides:
A mounting surface;
A light emitting device attached to the mounting surface;
With
The light emitting device
A substrate having a first surface and a second surface opposite to the first surface, and made of glass;
A light-emitting unit that is on one of the first surface and the second surface and includes a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode;
With
The substrate has a rib mark on the first surface side,
The light-emitting device is an electronic device attached to the attachment surface so that the substrate is curved convexly toward the outside of the second surface.
　請求項９に記載の発明は、
　取付面に取り付けられる発光装置の製造方法であって、
　第１面及び前記第１面とは反対側の第２面を有していてガラスからなる基材を準備し、各々が第１電極、第２電極及び前記第１電極と前記第２電極の間の有機層を含む複数の発光部を前記基材の前記第１面上又は前記第２面上の一方に形成する工程と、
　前記第１面側にリブマークを形成することにより、前記基材を複数の基板に分離して各基板が前記発光部を有するようにする工程と、
を含み、
　前記発光装置は、前記基板及び前記発光部を備え、
　前記発光装置は、前記基板が前記第２面の外側に向かって凸に湾曲するように前記取付面に取り付けられる、発光装置の製造方法である。 The invention according to claim 9 is:
A method of manufacturing a light emitting device attached to a mounting surface,
A base material made of glass having a first surface and a second surface opposite to the first surface is prepared, and each of the first electrode, the second electrode, the first electrode, and the second electrode A step of forming a plurality of light emitting portions including an organic layer therebetween on one of the first surface and the second surface of the substrate;
Forming a rib mark on the first surface side to separate the base material into a plurality of substrates so that each substrate has the light emitting part; and
Including
The light emitting device includes the substrate and the light emitting unit,
The light-emitting device is a method for manufacturing a light-emitting device, wherein the substrate is attached to the attachment surface so that the substrate is convexly curved toward the outside of the second surface.
　上述した目的、およびその他の目的、特徴および利点は、以下に述べる好適な実施の形態、およびそれに付随する以下の図面によってさらに明らかになる。 The above-described object and other objects, features, and advantages will be further clarified by a preferred embodiment described below and the following drawings attached thereto.
第１の実施形態に係る発光装置の平面図である。It is a top view of the light-emitting device concerning a 1st embodiment. 図１に示した発光装置の側面図である。It is a side view of the light-emitting device shown in FIG. 第１の実施形態に係る電子機器を示す図である。It is a figure which shows the electronic device which concerns on 1st Embodiment. 図１～図３に示した発光装置の製造方法を説明するための図である。FIG. 4 is a diagram for explaining a manufacturing method of the light emitting device shown in FIGS. 1 to 3; （ａ）は、図１～図３に示した基板が第２面の外側に向かって凸に湾曲した場合の曲げ強度試験の結果を示す表であり、（ｂ）は、図１～図３に示した基板が第１面の外側に向かって凸に湾曲した場合の曲げ強度試験の結果を示す表である。(A) is a table showing the results of a bending strength test when the substrate shown in FIGS. 1 to 3 is convexly convex toward the outside of the second surface, and (b) is a table showing FIGS. 5 is a table showing the results of a bending strength test in the case where the substrate shown in (1) is curved convexly toward the outside of the first surface. 第２の実施形態に係る発光装置の平面図である。It is a top view of the light-emitting device concerning a 2nd embodiment. 図６に示した発光装置１０の側面図である。It is a side view of the light-emitting device 10 shown in FIG. 第２の実施形態に係る電子機器を示す図である。It is a figure which shows the electronic device which concerns on 2nd Embodiment. 図６～図８に示した発光装置の製造方法を説明するための図である。FIG. 9 is a view for explaining a method of manufacturing the light emitting device shown in FIGS. 実施例１に係る発光装置の平面図である。1 is a plan view of a light emitting device according to Example 1. FIG. 図１０に示したαを拡大した図である。It is the figure which expanded (alpha) shown in FIG. 図１１から絶縁層及び隔壁を取り除いた図である。It is the figure which removed the insulating layer and the partition from FIG. 図１１のＡ－Ａ断面図である。FIG. 12 is a cross-sectional view taken along the line AA in FIG. 実施例２に係る発光装置の平面図である。6 is a plan view of a light emitting device according to Example 2. FIG. 図１４から第２導電層を取り除いた図である。It is the figure which removed the 2nd conductive layer from FIG. 図１５から有機層を取り除いた図である。It is the figure which removed the organic layer from FIG. 図１４のＡ－Ａ断面図である。It is AA sectional drawing of FIG.
　以下、本発明の実施の形態について、図面を用いて説明する。尚、すべての図面において、同様な構成要素には同様の符号を付し、適宜説明を省略する。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. In all the drawings, the same reference numerals are given to the same components, and the description will be omitted as appropriate.
（第１の実施形態）
　図１は、第１の実施形態に係る発光装置１０の平面図である。図２は、図１に示した発光装置１０の側面図である。図３は、第１の実施形態に係る電子機器を示す図である。発光装置１０は、基板１００及び発光領域１４１を備えている。基板１００は、第１面１０２及び第２面１０４を有している。第２面１０４は、第１面１０２の反対側にある。基板１００は、ガラスからなる。図１及び図２に示す例において、発光領域１４１は、基板１００の第１面１０２上にある。後述する図１０～図１７に示すように、発光領域１４１は、発光部１４０を含んでいる。発光部１４０は、第１電極１１０、有機層１２０及び第２電極１３０を有している。有機層１２０は、第１電極１１０と第２電極１３０の間にある。基板１００は、リブマーク１０６を有している。リブマーク１０６は、第１面１０２側にある。図３に示すように、発光装置１０は、基板１００が第２面１０４の外側に向かって凸に湾曲するように取付面２２に取り付けられる。以下、詳細に説明する。 (First embodiment)
FIG. 1 is a plan view of a light emitting device 10 according to the first embodiment. FIG. 2 is a side view of the light emitting device 10 shown in FIG. FIG. 3 is a diagram illustrating the electronic apparatus according to the first embodiment. The light emitting device 10 includes a substrate 100 and a light emitting region 141. The substrate 100 has a first surface 102 and a second surface 104. The second surface 104 is on the opposite side of the first surface 102. The substrate 100 is made of glass. In the example shown in FIGS. 1 and 2, the light emitting region 141 is on the first surface 102 of the substrate 100. As shown in FIGS. 10 to 17 described later, the light emitting region 141 includes a light emitting unit 140. The light emitting unit 140 includes a first electrode 110, an organic layer 120, and a second electrode 130. The organic layer 120 is between the first electrode 110 and the second electrode 130. The substrate 100 has a rib mark 106. The rib mark 106 is on the first surface 102 side. As shown in FIG. 3, the light emitting device 10 is attached to the attachment surface 22 so that the substrate 100 is curved convexly toward the outside of the second surface 104. Details will be described below.
　基板１００は、ガラス基板である。基板１００の第１面１０２の形状は、矩形である。具体的には、第１面１０２は、第１辺１０２ａ、第２辺１０２ｂ、第３辺１０２ｃ及び第４辺１０２ｄを有している。第２辺１０２ｂは、第１辺１０２ａの反対側にある。第３辺１０２ｃは、第１辺１０２ａと第２辺１０２ｂの間にある。第４辺１０２ｄは、第３辺１０２ｃの反対側にある。基板１００の厚さＴ１は、例えば４０μｍ以上２００μｍ以下である。 The substrate 100 is a glass substrate. The shape of the first surface 102 of the substrate 100 is a rectangle. Specifically, the first surface 102 has a first side 102a, a second side 102b, a third side 102c, and a fourth side 102d. The second side 102b is on the opposite side of the first side 102a. The third side 102c is between the first side 102a and the second side 102b. The fourth side 102d is on the opposite side of the third side 102c. The thickness T1 of the substrate 100 is, for example, not less than 40 μm and not more than 200 μm.
　基板１００は、リブマーク１０６を有している。リブマーク１０６は、基板１００の第１面１０２側にある。リブマーク１０６は、第１辺１０２ａ、第２辺１０２ｂ、第３辺１０２ｃ及び第４辺１０２ｄの各辺に沿って位置している。図２において、Ｔ１は、基板１００の厚さを示し、Ｔ２は、リブマーク１０６の深さを示す。Ｔ２／Ｔ１×１００は、２０．０％以上３０．０％以下、好ましくは２２．５％以上２７．５％以下である。即ち、前記リブマークの深さは、前記基板の厚さの２０．０％以上３０．０％以下、好ましくは２２．５％以上２７．５％以下である。 The substrate 100 has a rib mark 106. The rib mark 106 is on the first surface 102 side of the substrate 100. The rib mark 106 is located along each of the first side 102a, the second side 102b, the third side 102c, and the fourth side 102d. In FIG. 2, T <b> 1 indicates the thickness of the substrate 100, and T <b> 2 indicates the depth of the rib mark 106. T2 / T1 × 100 is 20.0% or more and 30.0% or less, preferably 22.5% or more and 27.5% or less. That is, the depth of the rib mark is 20.0% to 30.0%, preferably 22.5% to 27.5% of the thickness of the substrate.
　発光領域１４１は、第１面１０２上にある。後述する図１０～図１７に示すように、発光領域１４１は、発光部１４０を含んでいる。図１に示す例において、発光領域１４１の形状は、矩形である。 The light emitting area 141 is on the first surface 102. As shown in FIGS. 10 to 17 described later, the light emitting region 141 includes a light emitting unit 140. In the example shown in FIG. 1, the shape of the light emitting region 141 is a rectangle.
　図３に示すように、電子機器は、発光装置１０及び基材２０を備えている。図３に示す発光装置１０は、図１及び図２に示した発光装置１０である。基材２０は、取付面２２を有している。取付面２２は、外側に向けて凸に湾曲している。発光装置１０は、第１面１０２が発光領域１４１を挟んで取付面２２に対向するように基材２０に取り付けられている。これにより、基板１００は、第２面１０４の外側に向かって凸に湾曲する。 As shown in FIG. 3, the electronic device includes a light emitting device 10 and a base material 20. The light emitting device 10 illustrated in FIG. 3 is the light emitting device 10 illustrated in FIGS. 1 and 2. The base material 20 has a mounting surface 22. The mounting surface 22 is convexly curved toward the outside. The light emitting device 10 is attached to the base material 20 so that the first surface 102 faces the attachment surface 22 with the light emitting region 141 interposed therebetween. As a result, the substrate 100 is curved convexly toward the outside of the second surface 104.
　図４は、図１～図３に示した発光装置１０の製造方法を説明するための図である。まず、基材１００ａを準備する。基材１００ａは、第１面１０２及び第２面１０４を有している。次いで、基材１００ａの第１面１０２上に複数の発光領域１４１を形成する。次いで、図４に示すように、ホイールカッタ５００により基材１００ａの第１面１０２にスクライブライン５１０を形成する。これにより、スクライブライン５１０に沿ってリブマーク１０６が形成される。リブマーク１０６の深さＴ２（図２）は、スクライブライン５１０の深さによって調整することができる。次いで、スクライブライン５１０に沿って、基材１００ａを複数の基板１００に例えば人による力を加えることで分断する。Ｔ２／Ｔ１×１００は、２０．０％以上３０．０％以下、好ましくは２２．５％以上２７．５％以下である。Ｔ２／Ｔ１×１００が小さい場合、力を加えて分断する深さが大きくなるため、スクライブライン５１０の第２面側に微小な欠けが生じる可能性が高くなる。湾曲した場合、この微小な欠けを起因とした割れが発生しやすくなり基板１００の曲げ強度の低下の要因となる。また、Ｔ２／Ｔ１×１００が大きい場合はホイールカッタ５００により基板１００の第１面１０２にスクライブライン５１０を形成し、力を加える前に基板１００が分断する可能性が高くなる。このため、工程のハンドリング性が低下する。このようにして、複数の発光装置１０（図１～図３）が製造される。 FIG. 4 is a diagram for explaining a method of manufacturing the light emitting device 10 shown in FIGS. First, the base material 100a is prepared. The base material 100 a has a first surface 102 and a second surface 104. Next, a plurality of light emitting regions 141 are formed on the first surface 102 of the substrate 100a. Next, as shown in FIG. 4, a scribe line 510 is formed on the first surface 102 of the base material 100 a by the wheel cutter 500. As a result, the rib mark 106 is formed along the scribe line 510. The depth T2 (FIG. 2) of the rib mark 106 can be adjusted by the depth of the scribe line 510. Next, the base material 100a is divided along the scribe line 510 by applying, for example, a human force to the plurality of substrates 100. T2 / T1 × 100 is 20.0% or more and 30.0% or less, preferably 22.5% or more and 27.5% or less. When T2 / T1 × 100 is small, the depth at which the force is divided is increased, so that there is a high possibility that a minute chip is generated on the second surface side of the scribe line 510. When it is bent, cracks due to the minute chips are likely to occur, which causes a decrease in the bending strength of the substrate 100. Further, when T2 / T1 × 100 is large, a scribe line 510 is formed on the first surface 102 of the substrate 100 by the wheel cutter 500, and the possibility that the substrate 100 is divided before applying a force is increased. For this reason, the handleability of a process falls. In this way, a plurality of light emitting devices 10 (FIGS. 1 to 3) are manufactured.
　図５（ａ）は、図１～図３に示した基板１００が第２面１０４の外側に向かって凸に湾曲した場合の曲げ強度試験の結果を示す表である。図５（ｂ）は、図１～図３に示した基板１００が第１面１０２の外側に向かって凸に湾曲した場合の曲げ強度試験の結果を示す表である。 FIG. 5A is a table showing the results of a bending strength test in the case where the substrate 100 shown in FIGS. 1 to 3 is curved convexly toward the outer side of the second surface 104. FIG. 5B is a table showing the results of a bending strength test in the case where the substrate 100 shown in FIGS. 1 to 3 is curved convexly toward the outside of the first surface 102.
　図５（ａ）では、１０個の基板１００（試験番号１～１０）について試験した。基板１００の厚さは、１２０μｍとした。いずれの試験番号においても、リブマーク１０６の深さＴ２は、基板１００の厚さＴ１の２２．５％以上２７．５％以下とした。各試験番号において、第１面１０２側に荷重を与えて基板１００が第２面１０４の外側に向かって凸に湾曲するようにした。基板１００が割れた際の荷重及び基板１００が割れた際の基板１００の変位を測定した。測定した変位に基づいて、基板１００が割れた際の基板１００の曲率半径を算出した。 In FIG. 5A, ten substrates 100 (test numbers 1 to 10) were tested. The thickness of the substrate 100 was 120 μm. In any test number, the depth T2 of the rib mark 106 is 22.5% or more and 27.5% or less of the thickness T1 of the substrate 100. In each test number, a load was applied to the first surface 102 side so that the substrate 100 was curved convexly toward the outside of the second surface 104. The load when the substrate 100 was broken and the displacement of the substrate 100 when the substrate 100 was broken were measured. Based on the measured displacement, the curvature radius of the substrate 100 when the substrate 100 was cracked was calculated.
　図５（ｂ）では、１０個の基板１００（試験番号１～１０）について試験した。基板１００の厚さは、１２０μｍとした。いずれの試験番号においても、リブマーク１０６の深さＴ２は、基板１００の厚さＴ１の２２．５％以上２７．５％以下とした。各試験番号において、第２面１０４側に荷重を与えて基板１００が第１面１０２の外側に向かって凸に湾曲するようにした。基板１００が割れた際の荷重及び基板１００が割れた際の基板１００の変位を測定した。測定した変位に基づいて、基板１００が割れた際の基板１００の曲率半径を算出した。 In FIG. 5B, 10 substrates 100 (test numbers 1 to 10) were tested. The thickness of the substrate 100 was 120 μm. In any test number, the depth T2 of the rib mark 106 is 22.5% or more and 27.5% or less of the thickness T1 of the substrate 100. In each test number, a load was applied to the second surface 104 side so that the substrate 100 curved convexly toward the outside of the first surface 102. The load when the substrate 100 was broken and the displacement of the substrate 100 when the substrate 100 was broken were measured. Based on the measured displacement, the curvature radius of the substrate 100 when the substrate 100 was cracked was calculated.
　図５（ａ）に示すように、基板１００が第２面１０４の外側に向かって凸に湾曲した場合の曲率半径の平均は、１３．８９ｍｍであった。これに対して、図５（ｂ）に示すように、基板１００が第１面１０２の外側に向かって凸に湾曲した場合の曲率半径の平均は、２１．５７ｍｍであった。これらの比較より、基板１００の曲げ強度は、基板１００が第２面１０４の外側に向かって凸に湾曲した場合の方が基板１００が第１面１０２の外側に向かって凸に湾曲した場合よりも高いといえる。 As shown in FIG. 5A, the average radius of curvature when the substrate 100 was convexly curved toward the outside of the second surface 104 was 13.89 mm. On the other hand, as shown in FIG. 5B, the average radius of curvature when the substrate 100 is convexly convex toward the outside of the first surface 102 was 21.57 mm. From these comparisons, the bending strength of the substrate 100 is greater when the substrate 100 is curved convex toward the outside of the second surface 104 than when the substrate 100 is curved convex toward the outside of the first surface 102. It is also expensive.
　以上、本実施形態によれば、基板１００は、ガラスからなる。基板１００は、第１面１０２側にリブマーク１０６を有している。発光装置１０は、基板１００が第２面１０４の外側に向かって凸に湾曲するように取付面２２に取り付けられる。図５に示すように、基板１００の曲げ強度は、基板１００が第２面１０４の外側に向かって凸に湾曲した場合に高いものとなる。このため、本実施形態においては、基板１００を大きな曲率で湾曲させることができる。 As described above, according to the present embodiment, the substrate 100 is made of glass. The substrate 100 has a rib mark 106 on the first surface 102 side. The light emitting device 10 is attached to the attachment surface 22 so that the substrate 100 is convexly curved toward the outside of the second surface 104. As shown in FIG. 5, the bending strength of the substrate 100 is high when the substrate 100 is curved convexly toward the outside of the second surface 104. For this reason, in this embodiment, the board | substrate 100 can be curved with a big curvature.
　なお、基板１００は、発光装置１０が取付面２２に取り付けられていない場合、図２に示すように湾曲していなくてもよいし、又は図３に示すように湾曲していてもよい。 When the light emitting device 10 is not attached to the attachment surface 22, the substrate 100 may not be curved as shown in FIG. 2, or may be curved as shown in FIG.
（第２の実施形態）
　図６は、第２の実施形態に係る発光装置１０の平面図であり、第１の実施形態の図１に対応する。図７は、図６に示した発光装置１０の側面図であり、第１の実施形態の図２に対応する。図８は、第２の実施形態に係る電子機器を示す図であり、第１の実施形態の図３に対応する。本実施形態に係る発光装置１０は、以下の点を除いて、第１の実施形態に係る発光装置１０と同様である。 (Second Embodiment)
FIG. 6 is a plan view of the light emitting device 10 according to the second embodiment, and corresponds to FIG. 1 of the first embodiment. FIG. 7 is a side view of the light emitting device 10 shown in FIG. 6 and corresponds to FIG. 2 of the first embodiment. FIG. 8 is a diagram illustrating an electronic apparatus according to the second embodiment, and corresponds to FIG. 3 of the first embodiment. The light emitting device 10 according to the present embodiment is the same as the light emitting device 10 according to the first embodiment except for the following points.
　図６～図８に示すように、発光領域１４１は、第２面１０４上にあってもよい。基板１００は、リブマーク１０６を有している。リブマーク１０６は、第１面１０２側にある。図８に示すように、発光装置１０は、発光領域１４１が基板１００を挟んで取付面２２に対向するように基材２０に取り付けられている。これにより、基板１００は、第２面１０４の外側に向かって凸に湾曲している。 As shown in FIGS. 6 to 8, the light emitting region 141 may be on the second surface 104. The substrate 100 has a rib mark 106. The rib mark 106 is on the first surface 102 side. As shown in FIG. 8, the light emitting device 10 is attached to the base material 20 so that the light emitting region 141 faces the attachment surface 22 with the substrate 100 interposed therebetween. Thereby, the substrate 100 is curved convexly toward the outside of the second surface 104.
　図９は、図６～図８に示した発光装置１０の製造方法を説明するための図である。基材１００ａの第２面１０４上に複数の発光領域１４１を形成する。次いで、図４に示すように、ホイールカッタ５００により基板１００の第１面１０２にスクライブライン５１０を形成する。これにより、スクライブライン５１０に沿ってリブマーク１０６が形成される。リブマーク１０６の深さＴ２（図７）は、スクライブライン５１０の深さによって調整することができる。次いで、スクライブライン５１０に沿って、基材１００ａを複数の基板１００に分離する。このようにして、複数の発光装置１０（図６～図８）が製造される。 FIG. 9 is a diagram for explaining a method of manufacturing the light emitting device 10 shown in FIGS. A plurality of light emitting regions 141 are formed on the second surface 104 of the substrate 100a. Next, as shown in FIG. 4, a scribe line 510 is formed on the first surface 102 of the substrate 100 by the wheel cutter 500. As a result, the rib mark 106 is formed along the scribe line 510. The depth T2 of the rib mark 106 (FIG. 7) can be adjusted by the depth of the scribe line 510. Next, the base material 100 a is separated into a plurality of substrates 100 along the scribe line 510. In this way, a plurality of light emitting devices 10 (FIGS. 6 to 8) are manufactured.
　本実施形態によれば、第１の実施形態と同様にして、基板１００を大きな曲率で湾曲させることができる。 According to the present embodiment, the substrate 100 can be bent with a large curvature, as in the first embodiment.
（実施例１）
　図１０は、実施例１に係る発光装置１０の平面図である。図１１は、図１０に示したαを拡大した図である。図１２は、図１１から絶縁層１５０及び隔壁１６０を取り除いた図である。図１３は、図１１のＡ－Ａ断面図である。本実施例において、発光装置１０は、ディスプレイである。発光領域１４１は、基板１００の第１面１０２上にある。 Example 1
FIG. 10 is a plan view of the light emitting device 10 according to the first embodiment. FIG. 11 is an enlarged view of α shown in FIG. 12 is a diagram in which the insulating layer 150 and the partition wall 160 are removed from FIG. 13 is a cross-sectional view taken along the line AA in FIG. In the present embodiment, the light emitting device 10 is a display. The light emitting region 141 is on the first surface 102 of the substrate 100.
　発光装置１０は、ボトムエミッション及びトップエミッションのいずれであってもよい。発光装置１０がトップエミッションである場合、複数の発光部１４０からの光は、基板１００の第２面１０４から出射される。これに対して、発光装置１０がトップエミッションである場合、複数の発光部１４０からの光は、基板１００の第１面１０２の上方から出射される。 The light emitting device 10 may be either bottom emission or top emission. When the light emitting device 10 is top emission, light from the plurality of light emitting units 140 is emitted from the second surface 104 of the substrate 100. On the other hand, when the light emitting device 10 is top emission, the light from the plurality of light emitting units 140 is emitted from above the first surface 102 of the substrate 100.
　発光装置１０は、基板１００、発光領域１４１（複数の発光部１４０）、絶縁層１５０、複数の隔壁１６０、被覆層１７０、複数の有機層２２０、複数の第２導電層２３０、複数の導電層３０２（第１端子１１２、第１配線１１４及び第１導電層２１０）及び複数の導電層３０４（第２端子１３２及び第２配線１３４）を有している。 The light emitting device 10 includes a substrate 100, a light emitting region 141 (a plurality of light emitting portions 140), an insulating layer 150, a plurality of partition walls 160, a covering layer 170, a plurality of organic layers 220, a plurality of second conductive layers 230, and a plurality of conductive layers. 302 (first terminal 112, first wiring 114 and first conductive layer 210) and a plurality of conductive layers 304 (second terminal 132 and second wiring 134).
　図１１及び図１２に示すように、各導電層３０２は、第１端子１１２、第１配線１１４及び第１導電層２１０を有している。第１端子１１２は、導電層３０２の一端である。第１導電層２１０は、導電層３０２の一部である。第１配線１１４は、導電層３０２の一部であり、第１端子１１２と第１導電層２１０の間にある。各導電層３０４は、第２端子１３２及び第２配線１３４を有している。第２端子１３２は、導電層３０４の一端である。第２配線１３４は、導電層３０４の一部である。第１端子１１２には、電位が与えられる。これにより、第１端子１１２の電位は、第１配線１１４を介して第１導電層２１０に与えられる。第２端子１３２には、電位が与えられる。これにより、第２端子１３２の電位は、第２配線１３４を介して第２導電層２３０に与えられる。 As shown in FIGS. 11 and 12, each conductive layer 302 has a first terminal 112, a first wiring 114, and a first conductive layer 210. The first terminal 112 is one end of the conductive layer 302. The first conductive layer 210 is a part of the conductive layer 302. The first wiring 114 is a part of the conductive layer 302 and is between the first terminal 112 and the first conductive layer 210. Each conductive layer 304 has a second terminal 132 and a second wiring 134. The second terminal 132 is one end of the conductive layer 304. The second wiring 134 is a part of the conductive layer 304. A potential is applied to the first terminal 112. As a result, the potential of the first terminal 112 is applied to the first conductive layer 210 through the first wiring 114. A potential is applied to the second terminal 132. Accordingly, the potential of the second terminal 132 is applied to the second conductive layer 230 through the second wiring 134.
　導電層３０２上及び導電層３０４上の各々には、導電層１８０がある。導電層１８０の電気抵抗は、導電層３０２の電気抵抗及び導電層３０４の電気抵抗よりも低い。これにより、第１端子１１２と第１導電層２１０の間の電圧降下及び第２端子１３２と第２導電層２３０の間の電圧降下を抑制することができる。導電層１８０は、発光部１４０と重ならないように位置している。このため、導電層１８０は、透光性を有する必要がない。具体的には、導電層１８０は、例えばＡｌ又はＡｇからなる。その他の例として、導電層１８０は、例えば導電層３０２の上面上又は導電層３０４の上面上のＭｏ合金層、Ｍｏ合金層上のＡｌ合金層及びＡｌ合金層上のＭｏ合金層を含んでいてもよい。 There is a conductive layer 180 on each of the conductive layer 302 and the conductive layer 304. The electric resistance of the conductive layer 180 is lower than the electric resistance of the conductive layer 302 and the electric resistance of the conductive layer 304. Thereby, a voltage drop between the first terminal 112 and the first conductive layer 210 and a voltage drop between the second terminal 132 and the second conductive layer 230 can be suppressed. The conductive layer 180 is positioned so as not to overlap the light emitting unit 140. For this reason, the conductive layer 180 does not need to have translucency. Specifically, the conductive layer 180 is made of, for example, Al or Ag. As another example, the conductive layer 180 includes, for example, a Mo alloy layer on the top surface of the conductive layer 302 or the top surface of the conductive layer 304, an Al alloy layer on the Mo alloy layer, and a Mo alloy layer on the Al alloy layer. Also good.
　図１０に示すように、複数の第１導電層２１０は、第１方向（図中、Ｙ方向）に並んでいる。各第１導電層２１０は、第１方向に交わる（具体的には、第１方向に直交する）第２方向（図中、Ｘ方向）に延伸している。 As shown in FIG. 10, the plurality of first conductive layers 210 are arranged in the first direction (Y direction in the figure). Each first conductive layer 210 extends in a second direction (specifically, the X direction in the drawing) that intersects the first direction (specifically, orthogonal to the first direction).
　図１１～図１３に示すように、絶縁層１５０は、基板１００の第１面１０２上及び第１導電層２１０上にある。絶縁層１５０は、感光性樹脂（例えばポリイミド）を含んでいる。図１１及び図１２に示すように、絶縁層１５０は、複数の開口１５２を有する。複数の開口１５２は、第２方向（図中、Ｘ方向）に並ぶｍ個の行及び第１方向（図中、Ｙ方向）に並ぶｎ個の列を含むｍ×ｎの行列状に並んでいる。各開口１５２の平面形状は、矩形である。図１３に示すように、各開口１５２内では、第１導電層２１０の一部（第１電極１１０）と第２導電層２３０の一部（第２電極１３０）が互いに重なっている。これにより、開口１５２の縁によって囲まれた領域が発光部１４０として機能する。すなわち、絶縁層１５０は、発光部１４０を画定している。 As shown in FIGS. 11 to 13, the insulating layer 150 is on the first surface 102 and the first conductive layer 210 of the substrate 100. The insulating layer 150 includes a photosensitive resin (for example, polyimide). As shown in FIGS. 11 and 12, the insulating layer 150 has a plurality of openings 152. The plurality of openings 152 are arranged in an m × n matrix including m rows arranged in the second direction (X direction in the drawing) and n columns arranged in the first direction (Y direction in the drawing). Yes. The planar shape of each opening 152 is a rectangle. As shown in FIG. 13, in each opening 152, a part of the first conductive layer 210 (first electrode 110) and a part of the second conductive layer 230 (second electrode 130) overlap each other. Thereby, the region surrounded by the edge of the opening 152 functions as the light emitting unit 140. That is, the insulating layer 150 defines the light emitting unit 140.
　図１１及び図１２に示すように、絶縁層１５０は、開口１５４を有する。第２導電層２３０は、開口１５４を介して第２配線１３４に接続している。 As shown in FIGS. 11 and 12, the insulating layer 150 has an opening 154. The second conductive layer 230 is connected to the second wiring 134 through the opening 154.
　図１３に示すように、隔壁１６０は、絶縁層１５０上にある。隔壁１６０は、感光性樹脂（例えばポリイミド）を含んでいる。図１１に示すように、複数の隔壁１６０は、第２方向（図中、Ｘ方向）に並んでいる。各隔壁１６０は、第１方向（図中、Ｙ方向）に延伸している。図１３に示すように、第１方向（図１０～図１２のＹ方向）に垂直な断面において、隔壁１６０の上面の幅は、隔壁１６０の下面の幅よりも広い。より詳細には、第１方向（図１０～図１２のＹ方向）に垂直な断面において、隔壁１６０は、第１側面及び第２側面を有している。第２側面は、第１内側面の反対側にある。隔壁１６０の第１側面は、第１側面の上端が第１側面の下端よりも外側に位置するように傾いている。隔壁１６０の第２側面は、第２側面の上端が第２側面の下端よりも外側に位置するように傾いている。 As shown in FIG. 13, the partition 160 is on the insulating layer 150. The partition 160 includes a photosensitive resin (for example, polyimide). As shown in FIG. 11, the plurality of partition walls 160 are arranged in the second direction (X direction in the figure). Each partition wall 160 extends in the first direction (Y direction in the figure). As shown in FIG. 13, the width of the upper surface of the partition wall 160 is wider than the width of the lower surface of the partition wall 160 in the cross section perpendicular to the first direction (the Y direction in FIGS. 10 to 12). More specifically, in the cross section perpendicular to the first direction (the Y direction in FIGS. 10 to 12), the partition wall 160 has a first side surface and a second side surface. The second side surface is on the opposite side of the first inner surface. The first side surface of the partition wall 160 is inclined so that the upper end of the first side surface is located outside the lower end of the first side surface. The second side surface of the partition wall 160 is inclined so that the upper end of the second side surface is located outside the lower end of the second side surface.
　図１３に示すように、有機層２２０は、基板１００の第１面１０２上、第１導電層２１０上及び絶縁層１５０上にある。基板１００の第２面１０４上では、複数の有機層２２０は、第２方向（図１０～図１２のＸ方向）に並んでいる。互いに隣接する有機層２２０は、隔壁１６０を挟んで互いに対向している。図１３に示すように、有機層２２０の一部は、第１導電層２１０の一部（第１電極１１０）と重なっている。有機層２２０のこの一部は、発光部１４０の有機層１２０として機能する。 As shown in FIG. 13, the organic layer 220 is on the first surface 102 of the substrate 100, on the first conductive layer 210, and on the insulating layer 150. On the second surface 104 of the substrate 100, the plurality of organic layers 220 are arranged in the second direction (the X direction in FIGS. 10 to 12). The organic layers 220 adjacent to each other are opposed to each other with the partition wall 160 interposed therebetween. As shown in FIG. 13, a part of the organic layer 220 overlaps a part of the first conductive layer 210 (first electrode 110). This part of the organic layer 220 functions as the organic layer 120 of the light emitting unit 140.
　図１３に示すように、隔壁１６０の上面上には、有機層２２２がある。有機層２２２に含まれる材料は、有機層２２０に含まれる材料と同一である。有機層２２０及び有機層２２２は、基板１００の第１面１０２上及び隔壁１６０上に有機層を堆積することにより形成される。この場合、有機層は、隔壁１６０によって有機層２２０と有機層２２２に分離される。 As shown in FIG. 13, the organic layer 222 is on the upper surface of the partition wall 160. The material included in the organic layer 222 is the same as the material included in the organic layer 220. The organic layer 220 and the organic layer 222 are formed by depositing an organic layer on the first surface 102 and the partition 160 of the substrate 100. In this case, the organic layer is separated into the organic layer 220 and the organic layer 222 by the partition 160.
　有機層２２０は、例えば正孔注入層、正孔輸送層、発光層、電子輸送層及び電子注入層を有している。有機層２２０全体の厚さは、例えば５０ｎｍ以上２００ｎｍ以下である。正孔注入層内及び正孔輸送層内では、正孔が移動する。正孔注入層の厚さは、例えば５０ｎｍ以上１００ｎｍ以下である。正孔輸送層の厚さは、正孔注入層の厚さよりも薄い。正孔輸送層の厚さは、例えば２０ｎｍ以上５０ｎｍ以下である。発光層では、電子と正孔が再結合する。これにより、発光層からは、光が発せられる。発光層からの光の色は、例えば赤、緑又は青である。電子輸送層では、電子が輸送される。電子輸送層の厚さは、例えば５ｎｍ以上１００ｎｍ以下である。電子注入層は、アルカリ金属化合物（例えばＬｉＦ）、金属酸化物（例えば酸化アルミニウム）又は金属錯体（例えばリチウム８－ヒドロキシキノレート（Ｌｉｑ））からなる。電子注入層の厚さは、例えば０．１ｎｍ以上１０ｎｍ以下である。 The organic layer 220 has, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer. The total thickness of the organic layer 220 is, for example, not less than 50 nm and not more than 200 nm. Holes move in the hole injection layer and the hole transport layer. The thickness of the hole injection layer is, for example, not less than 50 nm and not more than 100 nm. The thickness of the hole transport layer is thinner than the thickness of the hole injection layer. The thickness of the hole transport layer is, for example, 20 nm or more and 50 nm or less. In the light emitting layer, electrons and holes are recombined. Thereby, light is emitted from the light emitting layer. The color of light from the light emitting layer is, for example, red, green, or blue. In the electron transport layer, electrons are transported. The thickness of the electron transport layer is, for example, 5 nm or more and 100 nm or less. The electron injection layer is made of an alkali metal compound (for example, LiF), a metal oxide (for example, aluminum oxide) or a metal complex (for example, lithium 8-hydroxyquinolate (Liq)). The thickness of the electron injection layer is, for example, not less than 0.1 nm and not more than 10 nm.
　なお、正孔注入層及び正孔輸送層の一方はなくてもよい。電子輸送層及び電子注入層の一方はなくてもよい。 One of the hole injection layer and the hole transport layer may be omitted. One of the electron transport layer and the electron injection layer may be omitted.
　正孔注入層、正孔輸送層、発光層、電子輸送層及び電子注入層は、例えば塗布プロセスにより形成される。具体的には、例えば正孔注入層、正孔輸送層及び発光層は、塗布プロセスにより形成され。電子輸送層及び電子注入層は、蒸着により形成される。 The hole injection layer, hole transport layer, light emitting layer, electron transport layer, and electron injection layer are formed by, for example, a coating process. Specifically, for example, the hole injection layer, the hole transport layer, and the light emitting layer are formed by a coating process. The electron transport layer and the electron injection layer are formed by vapor deposition.
　図１３に示すように、各第２導電層２３０は、有機層１２０上にある。図１１に示すように、複数の第２導電層２３０は、第２方向（図中、Ｘ方向）に並んでいる。各第２導電層２３０は、第１方向（図中、Ｙ方向）に延伸している。互いに隣接する第２導電層２３０は、隔壁１６０を挟んで互いに対向している。図１３に示すように、第２導電層２３０の一部は、第１導電層２１０の一部（第１電極１１０）と重なっている。第２導電層２３０のこの一部は、発光部１４０の第２電極１３０として機能する。 As shown in FIG. 13, each second conductive layer 230 is on the organic layer 120. As shown in FIG. 11, the plurality of second conductive layers 230 are arranged in the second direction (X direction in the figure). Each second conductive layer 230 extends in the first direction (Y direction in the figure). The second conductive layers 230 adjacent to each other face each other across the partition wall 160. As shown in FIG. 13, a part of the second conductive layer 230 overlaps a part of the first conductive layer 210 (first electrode 110). This part of the second conductive layer 230 functions as the second electrode 130 of the light emitting unit 140.
　図１３に示すように、隔壁１６０の上面上には、第２導電層２３２がある。第２導電層２３２に含まれる材料は、第２導電層２３０に含まれる材料と同一である。第２導電層２３０及び第２導電層２３２は、基板１００の第１面１０２上及び隔壁１６０上に導電層を堆積することにより形成される。この場合、導電層は、隔壁１６０によって第２導電層２３０と第２導電層２３２に分離される。 As shown in FIG. 13, the second conductive layer 232 is on the upper surface of the partition wall 160. The material included in the second conductive layer 232 is the same as the material included in the second conductive layer 230. The second conductive layer 230 and the second conductive layer 232 are formed by depositing a conductive layer on the first surface 102 and the partition 160 of the substrate 100. In this case, the conductive layer is separated into the second conductive layer 230 and the second conductive layer 232 by the partition wall 160.
　発光装置１０がボトムエミッションである場合、第１導電層２１０は、透光性を有する導電層である。この場合、第２導電層２３０は、透光性を有する必要はない。これに対して、発光装置１０がトップエミッションである場合、第２導電層２３０は、透光性を有する導電層である。この場合、第１導電層２１０は、透光性を有する必要はない。 When the light emitting device 10 is bottom emission, the first conductive layer 210 is a conductive layer having translucency. In this case, the second conductive layer 230 does not need to have translucency. On the other hand, when the light emitting device 10 is top emission, the second conductive layer 230 is a conductive layer having translucency. In this case, the first conductive layer 210 does not need to have translucency.
　第１導電層２１０及び第２導電層２３０が透光性を有する導電層である場合、第１導電層２１０及び第２導電層２３０は、例えば金属酸化物を含み、より具体的には、例えばＩＴＯ（Ｉｎｄｉｕｍ　Ｔｉｎ　Ｏｘｉｄｅ）、ＩＺＯ（Ｉｎｄｉｕｍ　Ｚｉｎｃ　Ｏｘｉｄｅ）、ＩＷＺＯ（Ｉｎｄｉｕｍ　Ｔｕｎｇｓｔｅｎ　Ｚｉｎｃ　Ｏｘｉｄｅ）又はＺｎＯ（Ｚｉｎｃ　Ｏｘｉｄｅ）を含んでいる。 When the first conductive layer 210 and the second conductive layer 230 are light-transmitting conductive layers, the first conductive layer 210 and the second conductive layer 230 include, for example, a metal oxide, and more specifically, for example, It contains ITO (Indium Tin Oxide), IZO (Indium Zinc Oxide), IWZO (Indium Tungsten Zinc Oxide) or ZnO (Zinc Oxide).
　第１導電層２１０及び第２導電層２３０が透光性を有しない導電層である場合、第１導電層２１０及び第２導電層２３０は、例えばＡｌ、Ａｕ、Ａｇ、Ｐｔ、Ｍｇ、Ｓｎ、Ｚｎ及びＩｎからなる第１群の中から選択される金属又はこの第１群から選択される金属の合金を含んでいる。 When the first conductive layer 210 and the second conductive layer 230 are non-translucent conductive layers, the first conductive layer 210 and the second conductive layer 230 include, for example, Al, Au, Ag, Pt, Mg, Sn, A metal selected from the first group consisting of Zn and In or an alloy of a metal selected from the first group is included.
　図１３に示すように、被覆層１７０は、第２導電層２３０及び複数の隔壁１６０を覆っている。これにより、被覆層１７０は、複数の発光部１４０及び複数の隔壁１６０を封止している。被覆層１７０は、例えば絶縁材料、より具体的には例えば金属酸化物を含んでいる。被覆層１７０は、例えば酸化チタン層及び酸化アルミニウム層を含んでいる。この場合、酸化アルミニウム層は、酸化チタン層上又は酸化チタン層下にある。被覆層１７０の厚さは、例えば５０ｎｍ以上３００ｎｍ以下である。被覆層２００は、例えばＡＬＤ（Ａｔｏｍｉｃ　Ｌａｙｅｒ　Ｄｅｐｏｓｉｔｉｏｎ）によって形成されている。 As shown in FIG. 13, the covering layer 170 covers the second conductive layer 230 and the plurality of partition walls 160. Thereby, the coating layer 170 seals the plurality of light emitting units 140 and the plurality of partition walls 160. The covering layer 170 includes, for example, an insulating material, more specifically, for example, a metal oxide. The covering layer 170 includes, for example, a titanium oxide layer and an aluminum oxide layer. In this case, the aluminum oxide layer is on the titanium oxide layer or below the titanium oxide layer. The thickness of the covering layer 170 is, for example, not less than 50 nm and not more than 300 nm. The covering layer 200 is formed by, for example, ALD (Atomic Layer Deposition).
　なお、被覆層１７０は、例えばＣＶＤ（Ｃｈｅｍｉｃａｌ　Ｖａｐｏｒ　Ｄｅｐｏｓｉｔｉｏｎ）又はスパッタにより形成してもよい。この場合、被覆層１７０は、例えばＳｉＯ２層又はＳｉＮ層を含んでいる。この場合、被覆層１７０の膜厚は、例えば１０ｎｍ以上１０００ｎｍ以下である。 The covering layer 170 may be formed by, for example, CVD (Chemical Vapor Deposition) or sputtering. In this case, the covering layer 170 includes, for example, a SiO 2 layer or a SiN layer. In this case, the film thickness of the coating layer 170 is, for example, not less than 10 nm and not more than 1000 nm.
　被覆層１７０は、樹脂層により覆われていてもよい。樹脂層は、被覆層１７０を保護するために設けられている。樹脂層は、例えばエポキシ樹脂又はアクリル樹脂を含んでいる。 The covering layer 170 may be covered with a resin layer. The resin layer is provided to protect the covering layer 170. The resin layer contains, for example, an epoxy resin or an acrylic resin.
　本実施例によれば、基板１００は、第１面１０２側にリブマーク１０６を有している。発光領域１４１（発光部１４０）は、基板１００の第１面１０２上にある。発光装置１０、第２面１０４が第１辺１０２ａから第２辺１０２ｂにかけて外側に向かって凸に湾曲するように取付面２２（図３）に取り付けられる。このため、基板１００を大きな曲率で湾曲させることができる。なお、発光領域１４１（発光部１４０）は、基板１００の第２面１０４上にあってもよい。 According to the present embodiment, the substrate 100 has the rib mark 106 on the first surface 102 side. The light emitting region 141 (light emitting unit 140) is on the first surface 102 of the substrate 100. The light emitting device 10 and the second surface 104 are attached to the attachment surface 22 (FIG. 3) so as to bend outwardly from the first side 102a to the second side 102b. For this reason, the board | substrate 100 can be curved with a big curvature. The light emitting region 141 (light emitting unit 140) may be on the second surface 104 of the substrate 100.
（実施例２）
　図１４は、実施例２に係る発光装置１０の平面図である。図１５は、図１４から第２導電層２３０を取り除いた図である。図１６は図１５から有機層２２０を取り除いた図である。図１７は、図１４のＡ－Ａ断面図である。本実施例において、発光装置１０は、発光パネルである。発光領域１４１（発光部１４０）は、基板１００の第１面１０２上にある。 (Example 2)
FIG. 14 is a plan view of the light emitting device 10 according to the second embodiment. FIG. 15 is a diagram in which the second conductive layer 230 is removed from FIG. FIG. 16 is a diagram in which the organic layer 220 is removed from FIG. 17 is a cross-sectional view taken along the line AA in FIG. In the present embodiment, the light emitting device 10 is a light emitting panel. The light emitting region 141 (light emitting unit 140) is on the first surface 102 of the substrate 100.
　発光装置１０は、基板１００、第２端子１３２、有機層２２０、第２導電層２３０及び導電層３０２（第１電極１１０及び第１端子１１２）を有している。 The light emitting device 10 includes a substrate 100, a second terminal 132, an organic layer 220, a second conductive layer 230, and a conductive layer 302 (first electrode 110 and first terminal 112).
　図１７に示すように、発光部１４０は、第１電極１１０、有機層１２０及び第２電極１３０を有している。有機層１２０は、第１電極１１０上にある。第２電極１３０は、有機層１２０上にある。 As shown in FIG. 17, the light emitting unit 140 includes a first electrode 110, an organic layer 120, and a second electrode 130. The organic layer 120 is on the first electrode 110. The second electrode 130 is on the organic layer 120.
　第１電極１１０は、導電層３０２の一部である。第１電極１１０は、発光部１４０の陽極として機能する。導電層３０２は、光透過性を有する透明電極である。有機層１２０からの光は、第１電極１１０を介して外部に出射する。導電層３０２は、金属を含む材料、例えば金属酸化物、より具体的には、例えばＩＴＯ（Ｉｎｄｉｕｍ　Ｔｉｎ　Ｏｘｉｄｅ）又はＩＺＯ（Ｉｎｄｉｕｍ　Ｚｉｎｃ　Ｏｘｉｄｅ）からなる。第１電極１１０の厚さは、例えば１０ｎｍ以上５００ｎｍ以下である。 The first electrode 110 is a part of the conductive layer 302. The first electrode 110 functions as an anode of the light emitting unit 140. The conductive layer 302 is a transparent electrode having optical transparency. Light from the organic layer 120 is emitted to the outside through the first electrode 110. The conductive layer 302 is made of a material containing metal, for example, a metal oxide, more specifically, for example, ITO (Indium Tin Oxide) or IZO (Indium Zinc Oxide). The thickness of the first electrode 110 is, for example, not less than 10 nm and not more than 500 nm.
　有機層１２０は、有機層２２０の一部であり、具体的には第１電極１１０と重なっている部分である。有機層２２０は、例えば正孔注入層、正孔輸送層、発光層、電子輸送層及び電子注入層を有している。 The organic layer 120 is a part of the organic layer 220, specifically, a portion overlapping the first electrode 110. The organic layer 220 has, for example, a hole injection layer, a hole transport layer, a light emitting layer, an electron transport layer, and an electron injection layer.
　第２電極１３０は、第２導電層２３０の一部であり、具体的には第１電極１１０と重なっている部分である。第２電極１３０は、発光部１４０の陰極として機能する。第２導電層２３０は、Ａｌ、Ａｕ、Ａｇ、Ｐｔ、Ｓｎ、Ｚｎ及びＩｎからなる第１群の中から選択される金属又はこの第１群から選択される金属の合金からなる金属層を含んでいる。 The second electrode 130 is a part of the second conductive layer 230, specifically, a part overlapping the first electrode 110. The second electrode 130 functions as a cathode of the light emitting unit 140. The second conductive layer 230 includes a metal layer made of a metal selected from the first group consisting of Al, Au, Ag, Pt, Sn, Zn, and In, or an alloy of a metal selected from the first group. It is out.
　図１６に示すように、基板１００上には、２つの第１端子１１２及び２つの第２端子１３２がある。２つの第１端子１１２は、導電層３０２の一部であり、第１電極１１０を挟んで互いに反対側にある。一方の第１端子１１２は、第３辺１０２ｃに沿って位置し、他方の第１端子１１２は、第４辺１０２ｄに沿って位置する。２つの第２端子１３２は、導電層３０２を挟んで互いに反対側にある。一方の第２端子１３２は、第１辺１０２ａに沿って位置し、他方の第２端子１３２は、第２辺１０２ｂに沿って位置する。第１端子１１２及び第２端子１３２は、発光部１４０に電力を供給するために設けられている。第１端子１１２及び第２端子１３２には、導電部材、例えばリード端子又はボンディングワイヤが接続される。 As shown in FIG. 16, there are two first terminals 112 and two second terminals 132 on the substrate 100. The two first terminals 112 are part of the conductive layer 302 and are on opposite sides of the first electrode 110. One first terminal 112 is positioned along the third side 102c, and the other first terminal 112 is positioned along the fourth side 102d. The two second terminals 132 are on opposite sides of the conductive layer 302. One second terminal 132 is positioned along the first side 102a, and the other second terminal 132 is positioned along the second side 102b. The first terminal 112 and the second terminal 132 are provided to supply power to the light emitting unit 140. A conductive member such as a lead terminal or a bonding wire is connected to the first terminal 112 and the second terminal 132.
　本実施例によれば、基板１００は、第１面１０２側にリブマーク１０６を有している。発光領域１４１（発光部１４０）は、基板１００の第１面１０２上にある。発光装置１０、第２面１０４が第１辺１０２ａから第２辺１０２ｂにかけて外側に向かって凸に湾曲するように取付面２２（図３）に取り付けられる。このため、基板１００を大きな曲率で湾曲させることができる。なお、発光領域１４１（発光部１４０）は、基板１００の第２面１０４上にあってもよい。 According to the present embodiment, the substrate 100 has the rib mark 106 on the first surface 102 side. The light emitting region 141 (light emitting unit 140) is on the first surface 102 of the substrate 100. The light emitting device 10 and the second surface 104 are attached to the attachment surface 22 (FIG. 3) so as to bend outwardly from the first side 102a to the second side 102b. For this reason, the board | substrate 100 can be curved with a big curvature. The light emitting region 141 (light emitting unit 140) may be on the second surface 104 of the substrate 100.
　以上、図面を参照して実施形態及び実施例について述べたが、これらは本発明の例示であり、上記以外の様々な構成を採用することもできる。 As mentioned above, although embodiment and the Example were described with reference to drawings, these are the illustrations of this invention, Various structures other than the above are also employable.

Claims (9)

  1. 　取付面に取り付けられる発光装置であって、
    　第１面及び前記第１面とは反対側の第２面を有し、ガラスからなる基板と、
    　前記第１面上又は前記第２面上の一方にあり、第１電極、第２電極及び前記第１電極と前記第２電極の間の有機層を含む発光部と、
    を備え、
    　前記基板は、前記第１面側にリブマークを有し、
    　前記発光装置は、前記基板が前記第２面の外側に向かって凸に湾曲するように前記取付面に取り付けられる発光装置。     A light emitting device attached to a mounting surface,
    A substrate having a first surface and a second surface opposite to the first surface, and made of glass;
    A light-emitting unit that is on one of the first surface and the second surface and includes a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode;
    With
    The substrate has a rib mark on the first surface side,
    The light emitting device is attached to the attachment surface such that the substrate is convexly curved toward the outside of the second surface.
  2. 　第１面及び前記第１面とは反対側の第２面を有し、ガラスからなる基板と、
    　前記第１面上又は前記第２面上の一方にあり、第１電極、第２電極及び前記第１電極と前記第２電極の間の有機層を含む発光部と、
    を備え、
    　前記基板は、前記第１面側にリブマークを有し、
    　前記基板は、前記第２面の外側に向かって凸に湾曲している発光装置。     A substrate having a first surface and a second surface opposite to the first surface, and made of glass;
    A light-emitting unit that is on one of the first surface and the second surface and includes a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode;
    With
    The substrate has a rib mark on the first surface side,
    The light emitting device, wherein the substrate is curved convexly toward the outside of the second surface.
  3. 　請求項１又は２に記載の発光装置において、
    　前記発光部は、前記第１面上にある発光装置。     The light-emitting device according to claim 1 or 2,
    The light emitting unit is a light emitting device on the first surface.
  4. 　請求項１又は２に記載の発光装置において、
    　前記発光部は、前記第２面上にある発光装置。     The light-emitting device according to claim 1 or 2,
    The light emitting unit is a light emitting device on the second surface.
  5. 　請求項１～４のいずれか一項に記載の発光装置において、
    　前記リブマークの深さは、前記基板の厚さの２０．０％以上３０．０％以下である発光装置。     The light emitting device according to any one of claims 1 to 4,
    The depth of the rib mark is 20.0% or more and 30.0% or less of the thickness of the substrate.
  6. 　請求項５に記載の発光装置において、
    　前記リブマークの深さは、前記基板の厚さの２２．５％以上２７．５％以下である発光装置。     The light emitting device according to claim 5.
    The depth of the rib mark is 22.5% or more and 27.5% or less of the thickness of the substrate.
  7. 　請求項１～６のいずれか一項に記載の発光装置において、
    　前記基板の厚さは、２００μｍ以下である発光装置。     The light emitting device according to any one of claims 1 to 6,
    The light emitting device, wherein the substrate has a thickness of 200 μm or less.
  8. 　取付面と、
    　前記取付面に取り付けられた発光装置と、
    を備え、
    　前記発光装置は、
    　　第１面及び前記第１面とは反対側の第２面を有し、ガラスからなる基板と、
    　　前記第１面上又は前記第２面上の一方にあり、第１電極、第２電極及び前記第１電極と前記第２電極の間の有機層を含む発光部と、
    を備え、
    　前記基板は、前記第１面側にリブマークを有し、
    　前記発光装置は、前記基板が前記第２面の外側に向かって凸に湾曲するように前記取付面に取り付けられている電子機器。     A mounting surface;
    A light emitting device attached to the mounting surface;
    With
    The light emitting device
    A substrate having a first surface and a second surface opposite to the first surface, and made of glass;
    A light-emitting unit that is on one of the first surface and the second surface and includes a first electrode, a second electrode, and an organic layer between the first electrode and the second electrode;
    With
    The substrate has a rib mark on the first surface side,
    The light emitting device is an electronic device attached to the attachment surface such that the substrate is convexly curved toward the outside of the second surface.
  9. 　取付面に取り付けられる発光装置の製造方法であって、
    　第１面及び前記第１面とは反対側の第２面を有していてガラスからなる基材を準備し、各々が第１電極、第２電極及び前記第１電極と前記第２電極の間の有機層を含む複数の発光部を前記基材の前記第１面上又は前記第２面上の一方に形成する工程と、
    　前記第１面側にリブマークを形成することにより、前記基材を複数の基板に分離して各基板が前記発光部を有するようにする工程と、
    を含み、
    　前記発光装置は、前記基板及び前記発光部を備え、
    　前記発光装置は、前記基板が前記第２面の外側に向かって凸に湾曲するように前記取付面に取り付けられる、発光装置の製造方法。     A method of manufacturing a light emitting device attached to a mounting surface,
    A base material made of glass having a first surface and a second surface opposite to the first surface is prepared, and each of the first electrode, the second electrode, the first electrode, and the second electrode A step of forming a plurality of light emitting portions including an organic layer therebetween on one of the first surface and the second surface of the substrate;
    Forming a rib mark on the first surface side to separate the base material into a plurality of substrates so that each substrate has the light emitting part; and
    Including
    The light emitting device includes the substrate and the light emitting unit,
    The method of manufacturing a light-emitting device, wherein the light-emitting device is attached to the attachment surface so that the substrate is convexly curved toward the outside of the second surface.
PCT/JP2016/058315 2016-03-16 2016-03-16 Light emitting device, electronic apparatus, and method for manufacturing light emitting device WO2017158757A1 (en)

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