WO2017156819A1 - 有机发光二极管的基底及其制作方法、有机发光二极管 - Google Patents

有机发光二极管的基底及其制作方法、有机发光二极管 Download PDF

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WO2017156819A1
WO2017156819A1 PCT/CN2016/079464 CN2016079464W WO2017156819A1 WO 2017156819 A1 WO2017156819 A1 WO 2017156819A1 CN 2016079464 W CN2016079464 W CN 2016079464W WO 2017156819 A1 WO2017156819 A1 WO 2017156819A1
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layer
organic light
light emitting
emitting diode
flexible substrate
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French (fr)
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徐超
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TCL China Star Optoelectronics Technology Co Ltd
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Shenzhen China Star Optoelectronics Technology Co Ltd
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/84—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/311—Flexible OLED
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Definitions

  • the invention belongs to the field of optoelectronic technology, and in particular to a substrate for an organic light emitting diode, a manufacturing method thereof and an organic light emitting diode.
  • organic light-emitting diode (OLED) display technology requires no backlight and has self-luminous characteristics. It uses a very thin coating of organic materials and a glass substrate. When a current is passed, these organic materials are used. Will shine. Moreover, the screen can be made lighter and thinner, has a larger viewing angle, and can significantly save power.
  • OLED organic light-emitting diode
  • substrates for preparing flexible OLED devices are mainly polyethylene terephthalate (PET) or polyethylene naphthalate (PEN).
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • these plastic substrates have poor water oxygen barrier properties, and these plastic substrates are not resistant to high temperatures and have a large surface roughness, so the performance of flexible OLED devices fabricated using these plastic substrates is poor.
  • an object of the present invention is to provide a substrate for an organic light emitting diode, comprising: a flexible substrate; a metal layer formed on the first surface of the flexible substrate; a layer formed on a surface of the metal layer facing away from the first surface; a second passivation layer formed on a second surface of the flexible substrate; wherein the second surface is The first surface is opposite.
  • the metal layer is formed by sputtering or evaporation.
  • first passivation layer and/or the second passivation layer are formed by a method of chemical vapor deposition or atomic layer deposition.
  • Another object of the present invention is to provide a method for fabricating a substrate of an organic light emitting diode.
  • the method includes: providing a flexible substrate; forming a metal layer on the first surface of the flexible substrate; forming a first passivation layer on a surface of the metal layer facing away from the first surface; A second passivation layer is formed on the second surface of the substrate; wherein the second surface is opposite the first surface.
  • a metal layer is formed on the first surface of the flexible substrate by sputtering or evaporation.
  • a first passivation layer is formed on a surface of the metal layer facing away from the first surface by a method of chemical vapor deposition or atomic layer deposition.
  • a first passivation layer is formed on the second surface of the flexible substrate by a method of chemical vapor deposition or atomic layer deposition.
  • Still another object of the present invention is to provide an organic light emitting diode comprising: a flexible substrate; a metal layer on the first surface of the flexible substrate; and a back surface of the metal layer facing the first surface a first passivation layer on the surface; a second passivation layer on the second surface of the flexible substrate; an anode sequentially on a surface of the second passivation layer facing away from the second surface a layer, a hole injection layer, a hole transport layer, an organic light-emitting layer, an electron transport layer, an electron injection layer, and a cathode layer; wherein the second surface is opposite to the first surface.
  • the substrate of the organic light emitting diode (OLED) of the present invention and the method of fabricating the same can improve the water oxygen barrier capability of the flexible substrate and reduce the flexible liner as compared with the substrate of the prior art OLED.
  • FIG. 1 is a schematic structural view of a substrate for an organic light emitting diode (OLED) according to an embodiment of the present invention
  • OLED organic light emitting diode
  • FIG. 3 is a schematic structural view of an organic light emitting diode according to an embodiment of the present invention.
  • FIG. 1 is a schematic structural view of a substrate for an organic light emitting diode (OLED) according to an embodiment of the present invention.
  • 2 is a flow chart of a method of fabricating a substrate for an organic light emitting diode (OLED), in accordance with an embodiment of the present invention.
  • a flexible substrate 10 is provided.
  • the flexible substrate 10 may be made of a suitable flexible material such as polyethylene terephthalate (PET) or polyethylene naphthalate (PEN), but the invention is not limited thereto.
  • PET polyethylene terephthalate
  • PEN polyethylene naphthalate
  • a metal layer 20 is formed on the first surface of the flexible substrate 10.
  • the first surface of the flexible substrate 10 refers to the lower surface of the flexible substrate 10, but the present invention is not limited thereto.
  • the arrangement of the metal layer 20 can improve the water oxygen barrier capability of the flexible substrate 10 while improving the heat dissipation of the flexible substrate 10.
  • the metal layer 20 is formed on the lower surface of the flexible substrate 10 by sputtering or evaporation.
  • the metal layer 20 may be made of a metal element (for example, aluminum, chromium, etc.), stainless steel, a metal alloy, or the like, but the invention is not limited thereto. It should be noted that the metal layer 20 The thickness can be between 15 nm and 40 nm.
  • a first passivation layer 30 is formed on a surface of the metal layer 20 that faces away from the first surface of the flexible substrate 10.
  • the surface of the metal layer 20 facing away from the first surface of the flexible substrate 10 refers to the lower surface of the metal layer 20.
  • the provision of the first passivation layer 30 can improve the water oxygen barrier capability of the flexible substrate 10 while protecting the metal layer 20 from oxidation or damage of the metal layer 20.
  • a first passivation layer 30 is formed on the underside of the metal layer 20 by chemical vapor deposition or atomic layer deposition.
  • the first passivation layer 30 may be made of a material such as silicon nitride, silicon dioxide or aluminum oxide, but the invention is not limited thereto. It should be noted that the thickness of the first passivation layer 30 may be between 200 nm and 500 nm.
  • a second passivation layer 40 is formed on the second surface of the flexible substrate 10.
  • the second surface of the flexible substrate 10 refers to the upper surface of the flexible substrate 10, which is opposite to the first surface (ie, the upper surface) of the flexible substrate 10.
  • the arrangement of the second passivation layer 40 can improve the water oxygen barrier capability of the flexible substrate 10 while reducing the roughness of the upper surface of the flexible substrate 10.
  • a second passivation layer 40 is formed on the second surface of the flexible substrate 10 by chemical vapor deposition or atomic layer deposition.
  • the second passivation layer 40 may be made of a material such as silicon nitride, silicon dioxide or aluminum oxide, but the invention is not limited thereto. It should be noted that the thickness of the second passivation layer 40 may be between 50 nm and 150 nm.
  • first passivation layer 30 and the second passivation layer 40 may be made of the same material, for example, both of which are made of silicon nitride, or may be made of different materials, for example,
  • the first passivation layer 30 is made of silicon nitride
  • the second passivation layer 40 is made of silicon oxide.
  • the substrate of the organic light emitting diode (OLED) provided by the embodiment and the manufacturing method thereof can improve the water oxygen barrier capability of the flexible substrate 10 and reduce the flexible substrate 10 compared with the substrate of the prior art OLED.
  • FIG. 3 is a schematic structural view of an organic light emitting diode according to an embodiment of the present invention.
  • an organic light emitting diode includes: a flexible substrate 10; a metal layer 20 on a first surface of the flexible substrate 10; and a first side of the metal layer 20 facing away from the flexible substrate 10. a first passivation layer 30 on the surface of the surface; a second passivation layer on the second surface of the flexible substrate 20.
  • anode layer 50 an anode layer 50, a hole injection layer (HIL) 60, and a hole transport layer (Hole Transport Layer) on the surface of the second passivation layer 40 facing away from the second surface of the flexible substrate 20 HTL) 70, an organic light emitting layer (EML) 80, an electron transport layer (ETL) 90, an electron injecting layer (EIL) 100, and a cathode layer 110.
  • HIL hole injection layer
  • Hole Transport Layer hole transport layer
  • the surface of the second passivation layer 40 facing away from the second surface of the flexible substrate 20 refers to the upper surface of the second passivation layer 40.
  • the anode layer 50 may be made of indium tin oxide (ITO), but the present invention is not limited thereto.
  • the cathode layer 110 may be made of a conductive metal, but the invention is not limited thereto.

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  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

一种有机发光二极管的基底、制作方法及有机发光二极管，其包括：柔性衬底（10）；金属层（20），形成在所述柔性衬底（10）的第一表面上；第一钝化层（30），形成在所述金属层（20）的背向所述第一表面的表面上；第二钝化层（40），形成在所述柔性衬底（10）的第二表面上；其中，所述第二表面与所述第一表面相对。能够提高柔性衬底的水氧阻挡能力，且还能降低柔性衬底的上表面的粗糙度，同时又能提高柔性衬底的散热性。

Description

有机发光二极管的基底及其制作方法、有机发光二极管 技术领域
本发明属于光电技术领域，具体地讲，涉及一种有机发光二极管的基底及其制作方法、有机发光二极管。
背景技术
有机发光二极管(OLED)显示技术与传统的LCD显示技术不同，其无需背光灯，且具有自发光的特性，采用非常薄的有机材料涂层和玻璃基板，当有电流通过时，这些有机材料就会发光。而且屏可以做得更轻更薄，可视角度更大，并且能够显著节省电能。
目前，制备柔性OLED器件的衬底主要是聚对苯二甲酸乙二酯(PET)或者聚萘二甲酸乙二醇酯(PEN)。然而这些塑料衬底具有的水氧阻挡性较差，并且这些塑料衬底不耐高温，表面粗糙度大，故利用这些塑料衬底制备的柔性OLED器件的性能较差。
发明内容
为了解决上述现有技术存在的问题，本发明的目的在于提供一种有机发光二极管的基底，其包括：柔性衬底；金属层，形成在所述柔性衬底的第一表面上；第一钝化层，形成在所述金属层的背向所述第一表面的表面上；第二钝化层，形成在所述柔性衬底的第二表面上；其中，所述第二表面与所述第一表面相对。
进一步地，所述金属层通过溅射或者蒸镀的方法形成。
进一步地，所述第一钝化层和/或所述第二钝化层通过化学气相沉淀或原子层沉积的方法形成。
本发明的另一目的还在于提供一种有机发光二极管的基底的制作方法，其 包括：提供一柔性衬底；在所述柔性衬底的第一表面上形成金属层；在所述金属层的背向所述第一表面的表面上形成第一钝化层；在所述柔性衬底的第二表面上形成第二钝化层；其中，所述第二表面与所述第一表面相对。
进一步地，利用溅射或者蒸镀的方法在所述柔性衬底的第一表面上形成金属层。
进一步地，利用化学气相沉淀或原子层沉积的方法在所述金属层的背向所述第一表面的表面上形成第一钝化层。
进一步地，利用化学气相沉淀或原子层沉积的方法在所述柔性衬底的第二表面上形成第一钝化层。
本发明的又一目的又在于提供一种有机发光二极管，其包括：柔性衬底；在所述柔性衬底的第一表面上的金属层；在所述金属层的背向所述第一表面的表面上的第一钝化层；在所述柔性衬底的第二表面上的第二钝化层；依次在所述第二钝化层的背向所述第二表面的表面上的阳极层、空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层及阴极层；其中，所述第二表面与所述第一表面相对。
本发明的有益效果：本发明的有机发光二极管(OLED)的基底及其制作方法，与现有技术的OLED的基底相比，能够提高柔性衬底的水氧阻挡能力，且还能降低柔性衬底的上表面的粗糙度，同时又能提高柔性衬底的散热性。
附图说明
通过结合附图进行的以下描述，本发明的实施例的上述和其它方面、特点和优点将变得更加清楚，附图中：
图1是根据本发明的实施例的用于有机发光二极管(OLED)的基底的结构示意图；
图2是根据本发明的实施例的用于有机发光二极管(OLED)的基底的制作方法的流程图；
图3是根据本发明的实施例的有机发光二极管的结构示意图。
具体实施方式
以下，将参照附图来详细描述本发明的实施例。然而，可以以许多不同的形式来实施本发明，并且本发明不应该被解释为限制于这里阐述的具体实施例。相反，提供这些实施例是为了解释本发明的原理及其实际应用，从而使本领域的其他技术人员能够理解本发明的各种实施例和适合于特定预期应用的各种修改。
在附图中，为了清楚元器件，夸大了层和区域的厚度。相同的标号在附图中始终表示相同的元件。
将理解的是，尽管在这里可使用术语“第一”、“第二”等来描述各种元件，但是这些元件不应受这些术语的限制。这些术语仅用于将一个元件与另一个元件区分开来。
也将理解的是，在一层或元件被称为在或形成在另一层或基板“之上”或“之下”时，它可以直接在或形成在该另一层或基板上或下，或者也可以存在中间层或中间元件。
图1是根据本发明的实施例的用于有机发光二极管(OLED)的基底的结构示意图。图2是根据本发明的实施例的用于有机发光二极管(OLED)的基底的制作方法的流程图。
参照图1和图2，在步骤210中，提供一柔性衬底10。这里，柔性衬底10可采用适当的柔性材料制成，例如聚对苯二甲酸乙二酯(PET)或者聚萘二甲酸乙二醇酯(PEN)，但本发明并不限制于此。
在步骤220中，在柔性衬底10的第一表面上形成金属层20。这里，柔性衬底10的第一表面指的是柔性衬底10的下表面，但本发明并不限制于此。金属层20的设置，能够提高柔性衬底10的水氧阻挡能力，同时提高柔性衬底10的散热性。
进一步地，利用溅射或者蒸镀的方法在柔性衬底10的下表面上形成金属层20。在本实施例中，金属层20可以由金属单质(例如铝、铬等)、不锈钢、金属合金等材料制成，但本发明并不限制于此。需要说明的是，金属层20的 厚度可以在15nm～40nm之间。
在步骤230中，在金属层20的背向柔性衬底10的第一表面的表面上形成第一钝化层30。这里，金属层20的背向柔性衬底10的第一表面的表面指的是金属层20的下表面。第一钝化层30的设置，能够提高柔性衬底10的水氧阻挡能力，同时能够保护金属层20，防止金属层20被氧化或损伤。
进一步地，利用化学气相沉淀或原子层沉积的方法在金属层20的下面上形成第一钝化层30。在本实施例中，第一钝化层30可以由氮化硅、二氧化硅或者氧化铝等材料制成，但本发明并不限制于此。需要说明的是，第一钝化层30的厚度可以在200nm～500nm之间。
在步骤240中，在柔性衬底10的第二表面上形成第二钝化层40。这里，柔性衬底10的第二表面指的是柔性衬底10的上表面，其与柔性衬底10的第一表面(即上表面)相对。第二钝化层40的设置，能够提高柔性衬底10的水氧阻挡能力，同时降低柔性衬底10的上表面的粗糙度。
进一步地，利用化学气相沉淀或原子层沉积的方法在柔性衬底10的第二表面上形成第二钝化层40。在本实施例中，第二钝化层40可以由氮化硅、二氧化硅或者氧化铝等材料制成，但本发明并不限制于此。需要说明的是，第二钝化层40的厚度可以在50nm～150nm之间。
此外，需要注意的是，第一钝化层30和第二钝化层40可以采用相同的材料制成，例如二者均采用氮化硅制成，也可以采用不同的材料制成，例如，第一钝化层30采用氮化硅制成，而第二钝化层40采用二氧化硅制成。
本实施例提供的有机发光二极管(OLED)的基底及其制作方法，与现有技术的OLED的基底相比，能够提高柔性衬底10的水氧阻挡能力，且还能降低柔性衬底10的上表面的粗糙度，同时又能提高柔性衬底10的散热性。
图3是根据本发明的实施例的有机发光二极管的结构示意图。
参照图3，根据本发明的实施例的有机发光二极管包括：柔性衬底10；在柔性衬底10的第一表面上的金属层20；在金属层20的背向柔性衬底10的第一表面的表面上的第一钝化层30；在柔性衬底20的第二表面上的第二钝化层 40；依次在第二钝化层40的背向柔性衬底20的第二表面的表面上的阳极层50、空穴注入层(Hole Inject Layer；HIL)60、空穴传输层(Hole Transport Layer；HTL)70、有机发光层(EML)80、电子传输层(Electron Transport Layer；ETL)90、电子注入层(Electron Inject Layer；EIL)100及阴极层110。
这里，第二钝化层40的背向柔性衬底20的第二表面的表面指的是第二钝化层40的上表面。
在本实施例中，阳极层50可以由氧化铟锡(ITO)制成，但本发明并不限制于此。阴极层110可以由导电金属制成，但本发明并不限制于此。
虽然已经参照特定实施例示出并描述了本发明，但是本领域的技术人员将理解：在不脱离由权利要求及其等同物限定的本发明的精神和范围的情况下，可在此进行形式和细节上的各种变化。

Claims (14)

  1. 一种有机发光二极管的基底，其中，包括：
    柔性衬底；
    金属层，形成在所述柔性衬底的第一表面上；
    第一钝化层，形成在所述金属层的背向所述第一表面的表面上；
    第二钝化层，形成在所述柔性衬底的第二表面上；
    其中，所述第二表面与所述第一表面相对。
  2. 根据权利要求1所述的有机发光二极管的基底，其中，所述金属层通过溅射或者蒸镀的方法形成。
  3. 根据权利要求1所述的有机发光二极管的基底，其中，所述第一钝化层和/或所述第二钝化层通过化学气相沉淀或原子层沉积的方法形成。
  4. 根据权利要求2所述的有机发光二极管的基底，其中，所述第一钝化层和/或所述第二钝化层通过化学气相沉淀或原子层沉积的方法形成。
  5. 一种有机发光二极管的基底的制作方法，其中，包括：
    提供一柔性衬底；
    在所述柔性衬底的第一表面上形成金属层；
    在所述金属层的背向所述第一表面的表面上形成第一钝化层；
    在所述柔性衬底的第二表面上形成第二钝化层；其中，所述第二表面与所述第一表面相对。
  6. 根据权利要求5所述的有机发光二极管的基底的制作方法，其中，利用溅射或者蒸镀的方法在所述柔性衬底的第一表面上形成金属层。
  7. 根据权利要求5所述的有机发光二极管的基底的制作方法，其中，利用化学气相沉淀或原子层沉积的方法在所述金属层的背向所述第一表面的表面上形成第一钝化层。
  8. 根据权利要求6所述的有机发光二极管的基底的制作方法，其中，利用化学气相沉淀或原子层沉积的方法在所述金属层的背向所述第一表面的表面上形成第一钝化层。
  9. 根据权利要求5所述的有机发光二极管的基底的制作方法，其中，利用化学气相沉淀或原子层沉积的方法在所述柔性衬底的第二表面上形成第一钝化层。
  10. 根据权利要求6所述的有机发光二极管的基底的制作方法，其中，利用化学气相沉淀或原子层沉积的方法在所述柔性衬底的第二表面上形成第一钝化层。
  11. 一种有机发光二极管，其中，包括：
    柔性衬底；
    在所述柔性衬底的第一表面上的金属层；
    在所述金属层的背向所述第一表面的表面上的第一钝化层；
    在所述柔性衬底的第二表面上的第二钝化层；
    依次在所述第二钝化层的背向所述第二表面的表面上的阳极层、空穴注入层、空穴传输层、有机发光层、电子传输层、电子注入层及阴极层；其中，所述第二表面与所述第一表面相对。
  12. 根据权利要求11所述的有机发光二极管，其中，所述金属层通过溅射或者蒸镀的方法形成。
  13. 根据权利要求11所述的有机发光二极管，其中，所述第一钝化层和/或所述第二钝化层通过化学气相沉淀或原子层沉积的方法形成。
  14. 根据权利要求12所述的有机发光二极管，其中，所述第一钝化层和/ 或所述第二钝化层通过化学气相沉淀或原子层沉积的方法形成。
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