WO2017148067A1 - 一种层状非金属材料的制备方法 - Google Patents

一种层状非金属材料的制备方法 Download PDF

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WO2017148067A1
WO2017148067A1 PCT/CN2016/089646 CN2016089646W WO2017148067A1 WO 2017148067 A1 WO2017148067 A1 WO 2017148067A1 CN 2016089646 W CN2016089646 W CN 2016089646W WO 2017148067 A1 WO2017148067 A1 WO 2017148067A1
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metal
layered
group
silicide
phosphide
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PCT/CN2016/089646
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English (en)
French (fr)
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孙晓明
张国新
王琳
王金迪
李昊远
胡策军
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北京化工大学
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Priority claimed from CN201610115733.9A external-priority patent/CN107151008B/zh
Priority claimed from CN201610267183.2A external-priority patent/CN107311178A/zh
Priority claimed from CN201610267184.7A external-priority patent/CN107311131A/zh
Priority claimed from CN201610410944.5A external-priority patent/CN107487776A/zh
Application filed by 北京化工大学 filed Critical 北京化工大学
Publication of WO2017148067A1 publication Critical patent/WO2017148067A1/zh

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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B25/00—Phosphorus; Compounds thereof
    • C01B25/02—Preparation of phosphorus
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/02—Silicon
    • C01B33/021—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B35/00—Boron; Compounds thereof
    • C01B35/02—Boron; Borides

Definitions

  • the invention belongs to the field of synthetic methods for non-metallic materials. More specifically, the present invention relates to a method for rapidly preparing a layered non-metallic material by a normal temperature and normal pressure liquid phase method.
  • Layered boron is a thermodynamically stable phase of elemental boron.
  • layered boron materials with fewer layers can produce a certain band gap and exhibit special carrier transport properties (J.Am.Chem .Soc. 2014, 136, 12257-12260/Nano Energy. 23 (2016) 97–10/RSC Adv., 2015, 5, 74399–74407/Nat. Commun., 2014, 5: 3113).
  • the band gap can be controlled in a wide range by various means such as changing the number of layers and impurity doping.
  • layered boron has become a research hotspot in the field of layered materials. However, there are many difficulties in the actual preparation of layered boron.
  • Layered silicon is a thermodynamically stable phase of elemental silicon.
  • a layered silicon material with a small number of layers can produce a certain band gap, and its band gap can be changed by various means such as changing the number of layers and impurity elements.
  • layered silicon has become a research hotspot in the field of materials in recent years. There are two main preparation strategies for the existing layered silicon materials: 1.
  • a wide range of metallic silicides such as calcium silicide (Nano Research 2015, 8(8): 2654–2662), layered clay materials (including The presence of a layered arrangement of oxidized silicon, ACS Nano, 2016, 10(2): 2843–2851) and reduction of oxidized silicon to elemental Si under strong reducing conditions, such as the use of molten magnesium metal.
  • a layered silicon material is obtained by using a negatively-charged halogen element gas in combination with calcium in calcium silicide (Nat Commun. 2016, 5(7): 10657). 2.
  • the layered phosphorus material is a thermodynamically stable phase of elemental phosphorus because it is itself a two-dimensional Dirac material with a band gap, and its band gap can be controlled over a wide range by various means. In recent years, It is highly favored by researchers in the field of materials.
  • the preparation method of the existing layered phosphorus material mainly includes three kinds. 1.
  • the layered phosphorus material can be obtained by using red phosphorus with a wide range of raw materials at a temperature of 12000 atm and heating at 200 ° C for a certain time. 2.
  • the red phosphorus is subjected to a long-time (usually 5-10 days) high-energy ball milling to obtain fragmented layered phosphor material particles. 3.
  • the red phosphorus can be converted into a layered phosphorus material under the heating catalysis of some metals (such as Au, Sn).
  • some metals such as Au, Sn.
  • the harsh conditions of the above preparation methods greatly limit its wide-scale application. Since the preparation methods described above all use red phosphorus as a raw material, the conversion of red phosphorus to layered phosphorus material inevitably needs to cross the reaction energy barrier, and this energy barrier is large, requiring external heat, high energy pressure or special catalyst. Forms accelerate conversion.
  • Graphene is a two-dimensional single-atom layer of carbon. It has been theoretically and experimentally verified as a stable form of elemental carbon. It has attracted the attention of researchers because of its special physical and chemical properties. At present, its application is very extensive, such as electronic conductivity devices, energy materials and so on.
  • the synthesis method has been extended from the initial mechanical force stripping method to various existing synthetic methods such as chemical vapor deposition, epitaxial growth, liquid phase stripping, and reduced graphene oxide. These methods all have certain advantages, but they do not form an absolute advantage over other methods. For example, chemical vapor deposition, although the quality of the produced graphene is high, requires a large amount of catalyst substrate, and the yield and area of preparation are very correlated with the substrate.
  • the epitaxial growth method requires a high temperature and high vacuum synthesis environment, and the general laboratory cannot meet the requirements.
  • the method for reducing graphene oxide to prepare graphene well solves the problem of yield
  • the graphene synthesized by this method is mostly graphene with high defect density, which severely limits its application in the field of electronic and electrical engineering.
  • the researchers have made many attempts and made some progress.
  • the invention provides a method for preparing a layered non-metallic material by a liquid phase method, comprising the following steps:
  • a non-metallic metal compound is added to a dispersing agent containing an oxidizing agent at normal temperature and pressure to obtain a layered non-metal material and a metal salt; wherein the oxidizing agent is selected from the group consisting of an active proton-containing substance and an oxidizing element Or an oxidizing metal cation;
  • the normal temperature is 0-200 ° C, wherein the normal pressure is 1-10 atmospheres.
  • the non-metal metallization is one or more of a metal silicide, a metal boride, a metal phosphide, and a metal carbide.
  • the active proton-containing substance is a substance containing a hydroxyl group, an amino group, an aldehyde group or a carboxyl group; wherein the oxidizing element is selected from one of S, F 2 , Cl 2 , Br 2 or I 2 or And wherein the oxidizing metal cation is one or more selected from the group consisting of Ag + , Au 3+ , Cu 2+ , Pt 3+ , Fe 3+ , Co 3+ or Ni 3+ .
  • the substance containing a hydroxyl group, an amino group, an aldehyde group or a carboxyl group is one or more of water, ethylene glycol, glycerin, ethylenediamine, formaldehyde, acetic acid or formic acid.
  • the dispersing agent is one or more of nitrogen nitroformamide, nitrogen nitroacetamide, and nitromethylpyrrolidone.
  • the metal silicide is one or more of calcium silicide, magnesium silicide, tantalum silicide, and zinc silicide;
  • the metal boride is one or more of calcium boride, magnesium boride, lanthanum boride and zinc boride;
  • the metal phosphide is calcium phosphide, magnesium phosphide, bismuth phosphide, zinc phosphide
  • the present invention provides a method of preparing a layered non-metallic material that does not require harsh conditions.
  • the preparation method of the invention has the conditions of normal temperature and normal pressure, simple equipment, all the operation steps can be completed within 4 hours, the reaction is not limited by the amount of the reactants, and can be scaled up infinitely, which has the feasibility of direct industrialization.
  • Figure 1 is a crystal structure diagram of magnesium boride, the large sphere represents a magnesium atom, and the small sphere represents a boron atom.
  • Example 2 is a transmission electron micrograph of the layered boron material prepared in Example 1 (a), Example 4 (b), and Example 5 (c).
  • Example 3 is a scanning electron micrograph of a layered boron material prepared in Example 2 (d), Example 3 (e) Example 6 (f), Example 7 (g), and Example 8 (h).
  • Example 4 is an XRD diffraction pattern of the layered boron material prepared in Example 3.
  • Figure 5 is a Raman spectrum of the layered boron material prepared in Example 3.
  • Fig. 6 is a crystal structure diagram of calcium silicide, in which a large sphere represents a calcium atom and a small sphere represents a silicon atom.
  • Example 7 is a transmission electron micrograph of the layered silicon material prepared in Example 9 (i), Example 10 (j), Example 11 (k), and Example 12 (1).
  • Example 8 is a Raman spectrum of the layered silicon material prepared in Example 9 (m), Example 10 (n), Example 11 (o), and Example 12 (p).
  • Example 9 is a scanning electron micrograph of a layered silicon material prepared in Example 13 (q), Example 14 (r), and Example 15 (s).
  • Figure 10 is an XRD pattern of the layered silicon material prepared in Example 12.
  • Figure 11 is a transmission electron micrograph of the layered phosphor material prepared in Example 16 (t), Example 17 (u), and Example 18 (v).
  • Figure 12 is a transmission electron micrograph of the edge region selected in Example 17 (w), Example 18 (x), and Example 18 (y) for the edge region of the zigzag vertical light source and Example 20 (z) transmission electron micrograph.
  • Figure 13 is a scanning electron micrograph of Example 16 (aa), Example 19 (ab), Example 21 (ac), and Example 22 (ad).
  • Figure 14 is a Raman spectrum of the layered phosphor material prepared in Example 16.
  • Figure 15 is a Raman spectrum of the layered phosphor material prepared in Examples 16, 17, and 18.
  • Figure 16 is an X-ray photoelectron spectroscopy chart of the layered phosphor material prepared in Examples 16, 17, and 18.
  • Example 17 is a scanning electron micrograph of graphene prepared in Example 23.
  • Example 18 is a scanning electron micrograph of graphene prepared in Example 24.
  • Example 19 is a scanning electron micrograph of graphene prepared in Example 25.
  • Example 20 is a scanning electron micrograph of graphene prepared in Example 26.
  • Example 21 is a scanning electron micrograph of graphene prepared in Example 27.
  • Example 22 is a scanning electron micrograph of graphene prepared in Example 28.
  • Figure 23 is a scanning electron micrograph of graphene prepared in Example 29.
  • Example 24 is a scanning electron micrograph of graphene prepared in Example 30.
  • Figure 25 is a scanning electron micrograph of graphene prepared in Example 31.
  • Figure 26 is a scanning electron micrograph of graphene prepared in Example 32.
  • Figure 27 is an XRD chart of graphene prepared in Examples 23, 24, and 25.
  • Figure 30 is a Raman spectrum of graphene prepared in Examples 31, 32.
  • magnesium boride powder was added to 10 ml of deionized water (reaction solvent), magnetically stirred for 10 minutes, then added with 10% diluted hydrochloric acid to remove the magnesium hydroxide formed by the reaction, and then washed and dried to obtain the target.
  • reaction solvent deionized water
  • 10% diluted hydrochloric acid to remove the magnesium hydroxide formed by the reaction
  • Example 2 The same as in Example 1 except that the reaction temperature was raised to 120 °C.
  • Example 2 The same as in Example 1 except that dilute hydrochloric acid having a pH of 1 was used as a reaction solvent.
  • the reaction temperature was raised to 120 ° C except that 10 ml of ethylene glycol was used as a reaction solvent, and the others were the same as in Example 1.
  • magnesium boride powder was added to 30 ml of nitrogen nitroformamide, and then 0.2 g of ferric nitrate was added. The mixture was ultrasonically homogeneous, and charged into a reaction kettle. The solvent was heated at 120 ° C for 4 hours, and then added with 10% diluted hydrochloric acid. The calcium salt is removed, and the layered boron material of the target product is obtained by continuing to clean and dry.
  • magnesium silicide powder was added to 10 ml of deionized water (reaction solvent), magnetically stirred for 10 minutes, and then reacted at 120 ° C for 4 hours, and 10% diluted hydrochloric acid was added to remove the magnesium hydroxide formed by the reaction, and the reaction was continued.
  • the target product layered silicon material is obtained by washing and drying.
  • Example 9 The same as in Example 9 except that 10 ml of ethylene glycol was used as the reaction solvent.
  • Example 9 The same as Example 9 except that calcium silicide was used as the reactant.
  • Example 11 The same as Example 11 except that 180 ° C was used as the reaction temperature.
  • Example 13 The other conditions were the same as in Example 13 except that 0.2 g of ferric nitrate was used instead of the silver nitrate in Example 5.
  • 0.2 g of calcium silicide powder was added to 30 ml of nitrogen-nitro-dimethylformamide, ultrasonically homogenized, placed in a ball mill jar, ball milled at room temperature for 4 hours, added with 10% diluted hydrochloric acid to remove the calcium salt, continue to wash and dry to obtain
  • the target product is a layered silicon material.
  • Example 16 The same procedure as in Example 16 was carried out except that ethylene glycol was used as a reaction solvent instead of the aqueous solvent.
  • Example 23 In addition to using 10 ml of 10% dilute hydrochloric acid as a reaction solvent and 2 ml of nitromethylpyrrolidone (NMP, a strong polar solvent, often used as a delaminating dispersant for a layered material) as a dispersing solvent, other conditions and Example 23 the same.
  • NMP nitromethylpyrrolidone
  • Example 23 The same conditions as in Example 23 were carried out except that 10 ml of 10% dilute hydrochloric acid was used as a reaction solvent and 2 ml of N,N-dimethylformamide (DMF, a strong polar solvent) was used as a dispersion solvent.
  • DMF N,N-dimethylformamide
  • Example 23 The same conditions as in Example 23 were carried out except that 10 ml of anhydrous formic acid was used as a reaction solvent.
  • Example 23 The same conditions as in Example 23 were carried out except that 10 ml of anhydrous acetic acid was used as a reaction solvent.
  • Example 23 Except that 10 ml of anhydrous acetic acid was used as a reaction solvent and 2 ml of N,N-dimethylformamide (DMF, a strong polar solvent) was used as a dispersion solvent, and other conditions were the same as in Example 23.
  • DMF N,N-dimethylformamide
  • Example 23 Except that 10 ml of anhydrous acetic acid was used as a reaction solvent and 2 ml of nitromethylpyrrolidone (NMP, a strong polar solvent, often used as a delaminating dispersant for a layered material) as a dispersing solvent, other conditions were the same as in Example 23. .
  • NMP nitromethylpyrrolidone
  • Example 23 The same conditions as in Example 23 were carried out except that 10 ml of anhydrous methanol was used as a reaction solvent.
  • Example 23 The other conditions were the same as in Example 23 except that 10 ml of ethylene glycol was used as the reaction solvent.

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Abstract

一种液相法制备层状非金属材料的方法，包括以下步骤：(1)在0-200℃的温度和常压下，将非金属的金属化物加入到含有氧化剂的分散剂中进行反应，得到层状非金属材料和金属盐；(2)清洗步骤(1)的反应后的物质以除去所述金属盐，干燥剩余物即得到所述层状非金属材料。

Description

一种层状非金属材料的制备方法 技术领域
本发明属于非金属材料的合成方法领域。更具体地，本发明涉及一种常温常压液相法快速制备层状非金属材料的方法。
背景技术
层状硼为单质硼的一种热力学较为稳定的相，通过计算和模拟，层数较少的层状硼材料可产生一定带隙，表现出特殊的载流子传输性能(J.Am.Chem.Soc.2014,136,12257-12260/Nano Energy.23(2016)97–10/RSC Adv.,2015,5,74399–74407/Nat.Commun.,2014,5:3113)。此外，其带隙可通过多种手段如改变层数、杂元素掺杂在较大范围内调控，近些年来，层状硼已经成为层状材料领域的研究热点。然而层状硼实际制备中存在诸多困难，目前只有在2015年发表在《Science》上基于高温高真空溅射方法，在金属Ag的(111)沉积得到单层硼，其研究表明单层硼烯的确表现出特殊的金属性的输运性能。
层状硅为单质硅的一种热力学较为稳定的相，层数较少的层状硅材料可产生一定带隙，且其带隙可通过多种手段如改变层数、杂元素掺杂在较大范围内调控，近些年来，层状硅已经成为材料领域的研究热点。现有的层状硅材料的制备策略主要有两种：1、使用原料广泛的金属性硅化物如硅化钙(Nano Research 2015,8(8):2654–2662)、层状粘土材料(其中有层状排布的氧化态硅的存在，ACS Nano,2016,10(2):2843–2851)和在强还原性条件下，如使用熔融态的金属镁将氧化态硅还原为单质Si。此外，使用负电性较强的卤族元素气体与硅化钙中的钙联结，得到层状硅材料(Nat Commun.2016,5(7):10657)。2、利用原子级别的硅源，在高真空下，溅射到具有一定规整形貌的二维金属确定的晶面上，使其在金属表面重排，形成规整的层状硅材料(Nano Lett.2013,13,685-690&Nano Lett.2012,12,3507-3511)。总结以上方法，均需较高温度输入，同时还需特殊气体和条件的使用，如使用高腐蚀性的氟气或是高真空条件。
层状磷材料为单质磷的一种热力学较为稳定的相，因为其本身为具有带隙的二维狄拉克材料，且其带隙可通过多种手段在较大范围内调控，近些年来，备受材料领域的研究者的青睐。现有的层状磷材料的制备方法主要包括三种，1、使用原料广泛的红磷在12000atm下200℃下受热一定时间，即可得到层状磷材料。2、将红磷经历长时间(通常为5-10天)高能量的球磨，可得到碎片化的层状磷材料颗粒。3、使用红磷在部分金属(如Au、Sn)的加热催化下，可以转化成为层状磷材料。上述制备方法条件的苛刻极大的限制了其广泛的规模化应用。 由于以上叙述的制备方法均以红磷作为原料，而红磷到层状磷材料的转化不可避免的需要跨越反应能垒，而且此能垒较大，需要外部以热量、高能压力或特殊催化剂等形式加速转化。
石墨烯是一种二维形式单原子层的碳单质，被理论和实验验证为一种稳定的单质碳的存在形式，因其具有特殊的物理和化学性质而备受研究者关注。目前其应用非常广泛，如电子电导器件、能源材料等。其合成方法已经从最开始的机械力剥离法扩展到现有的多种合成方法如：化学气相沉积法、外延生长法、液相剥离法、还原氧化石墨烯法等。这些方法均具有一定优势，但不能形成相对于其他方法的绝对优势。例如，化学气相沉积法，虽然制备得到的石墨烯质量较高，但需要大量的催化剂基底，且产量和制备的面积与基底相关性非常大。又如外延生长法需要高温高真空的合成环境，一般的实验室尚且不能达到要求。还原氧化石墨烯制备石墨烯的方法虽然很好的解决了产量的问题，但是经此方法合成的石墨烯多为高缺陷密度的石墨烯，严重限制了其在电子电工领域的应用。为了在保证石墨烯的质量的同时，提高石墨烯的产量，研究者们提出并进行了多次尝试，取得了一定的进展。
发明内容
本发明提供了一种液相法制备层状非金属材料的方法，包括以下步骤：
(1)常温常压下，将非金属的金属化物加入到含有氧化剂的分散剂中进行反应，得到层状非金属材料和金属盐；其中所述氧化剂选自含有活性质子的物质、氧化性单质或氧化性金属阳离子；
(2)清洗步骤(1)的反应后的物质以除去所述金属盐，干燥剩余物即得到所述层状非金属材料。
优选地，其中所述常温为0-200℃，其中所述常压为1-10大气压。
优选地，其中所述的非金属的金属化物为金属硅化物、金属硼化物、金属磷化物、金属碳化物中的一种或几种。
优选地，其中所述含有活性质子的物质为含有羟基、氨基、醛基或羧基的物质；其中所述氧化性单质选自S、F2、Cl2、Br2或I2中的一种或几种；其中所述氧化性金属阳离子选自Ag+、Au3+、Cu2+、Pt3+、Fe3+、Co3+或Ni3+中的一种或几种。
优选地，其中所述含有羟基、氨基、醛基或羧基的物质为水、乙二醇、甘油、乙二胺、甲醛、乙酸或甲酸中的一种或几种。
优选地，其中所述分散剂为氮氮二甲基甲酰胺、氮氮二甲基乙酰胺、氮甲基吡咯烷酮中的一种或几种。
优选地，其中所述的金属硅化物为硅化钙、硅化镁、硅化钡、硅化锌中的一种或几种； 所述金属硼化物为硼化钙、硼化镁、硼化钡、硼化锌中的一种或几种；所述金属磷化物为磷化钙、磷化镁、磷化钡、磷化锌中的一种或几种；所述金属碳化物中为碳化钙、碳化镁、碳化钡、碳化锌中的一种或几种
本发明的有益效果：
1、本发明提供一种无需苛刻条件保护的层状非金属材料的制备方法。采用价格低廉的非金属的金属化物作为层状非金属材料的来源，经简单的反应，即可得到高质量的、目前备受国内外材料学界瞩目的层状层状非金属材料。
2、本发明的制备方法条件为常温常压，设备简单，所有的操作步骤可以在4小时内完成，反应不受反应物量的限制，可以无限等比例放大，具有直接工业化的可行性。
附图说明
图1为硼化镁的晶体结构图，大球代表镁原子，小球代表硼原子。
图2为实施例1(a)、实施例4(b)和实施例5(c)中制备的层状硼材料的透射电镜照片。
图3为实施例2(d)、实施例3(e)实施例6(f)、实施例7(g)、实施例8(h)中制备的层状硼材料的扫描电镜照片。
图4为实施例3中制备的层状硼材料的XRD衍射图谱。
图5为实施例3中制备的层状硼材料的Raman图谱。
图6为硅化钙的晶体结构图，大球代表钙原子，小球代表硅原子。
图7为实施例9(i)、实施例10(j)、实施例11(k)、实施例12(l)中制备的层状硅材料的透射电镜照片。
图8为实施例9(m)、实施例10(n)、实施例11(o)、实施例12(p)中制备的层状硅材料的拉曼图谱
图9为实施例13(q)、实施例14(r)、实施例15(s)中制备的层状硅材料的扫描电镜照片。
图10为实施例12中制备的层状硅材料的XRD图谱。
图11为实施例16(t)、实施例17(u)、实施例18(v)中制备的层状磷材料的透射电镜照片。
图12为实施例17(w)、实施例18(x)选取边缘区域的透射电镜照片和实施例18(y)选取曲折垂直光源的边缘区域的以及实施例20(z)透射电镜照片。
图13为实施例16(aa)、实施例19(ab)、实施例21(ac)、实施例22(ad)的扫描电镜照片。
图14为实施例16中制备的层状磷材料的拉曼图谱。
图15为实施例16、17、18中制备的层状磷材料的拉曼图谱。
图16为实施例16、17、18中制备的层状磷材料的X射线光电子能谱图。
图17为实施例23中制备的石墨烯的扫描电镜图。
图18为实施例24中制备的石墨烯的扫描电镜图。
图19为实施例25中制备的石墨烯的扫描电镜图。
图20为实施例26中制备的石墨烯的扫描电镜图。
图21为实施例27中制备的石墨烯的扫描电镜图。
图22为实施例28中制备的石墨烯的扫描电镜图。
图23为实施例29中制备的石墨烯的扫描电镜图。
图24为实施例30中制备的石墨烯的扫描电镜图。
图25为实施例31中制备的石墨烯的扫描电镜图。
图26为实施例32中制备的石墨烯的扫描电镜图。
图27为实施例23、24、25中制备的石墨烯的XRD谱图。
图28为实施例23、24、25中制备的石墨烯的Raman谱图。
图29为实施例28、29、30中制备的石墨烯的Raman谱图。
图30为实施例31、32中制备的石墨烯的Raman谱图。
具体实施方式
实施例1
将0.2克硼化镁粉末加入到10毫升的去离子水(反应溶剂)中，磁力搅拌10分钟后，，加入10％稀盐酸清洗除掉反应生成的氢氧化镁，继续清洗并干燥即得到目标产物层状硼材料。
实施例2
除将反应温度提高至120℃，其他与实施例1相同。
实施例3
除使用pH＝1的稀盐酸作为反应溶剂，其他与实施例1相同。
实施例4
除使用10毫升乙二醇作为反应溶剂，将反应温度提高至120℃，其他与实施例1相同。
实施例5
除使用pH＝1的EDTA溶液，其他与实施例1相同。
实施例6
将0.2克硼化镁粉末加入到30毫升的氮氮二甲基甲酰胺中，再加入0.2克硝酸铁，超声均匀，装入反应釜，120℃溶剂热4小时，加入10％稀盐酸清洗除掉钙盐，继续清洗并干燥即得到目标产物层状硼材料。
实施例7
将0.2克硼化镁粉末加入到去离子水中，加入氧化性单质Br2，球磨4个小时，加入10％稀盐酸清洗除掉反应生成的氢氧化镁，继续清洗并干燥即得到目标产物层状硼材料。
实施例8
除将Br2替换成S外，其他与实施例7相同。
实施例9
将0.2克硅化镁粉末加入到10毫升的去离子水(反应溶剂)中，磁力搅拌10分钟后，在120℃下反应4小时，加入10％稀盐酸清洗除掉反应生成的氢氧化镁，继续清洗并干燥即得到目标产物层状硅材料。
实施例10
除使用10毫升乙二醇作为反应溶剂，其他与实施例9相同。
实施例11
除使用硅化钙作为反应物，其他与实施例9相同。
实施例12
除使用180℃作为反应温度，其他与实施例11相同。
实施例13
将0.2克硅化钙粉末加入到30毫升的氮氮二甲基甲酰胺中，再加入0.05克硝酸银，超声均匀，装入反应釜，在120℃反应4小时，加入10％稀盐酸清洗除掉钙盐，继续清洗并干燥即得到目标产物层状硅材料。
实施例14
除使用0.2克硝酸铁替代实施例5中的硝酸银外，其他条件与实施例13相同。
实施例15
将0.2克硅化钙粉末加入到30毫升的氮氮二甲基甲酰胺中，超声均匀，装入球磨罐，常温球磨4小时，加入10％稀盐酸清洗除掉钙盐，继续清洗并干燥即得到目标产物层状硅材料。
实施例16
室温下，将0.2克磷化钙粉末加入到10毫升的去离子水(反应溶剂)中，磁力搅拌10分钟后，加入10％稀盐酸清洗除掉反应生成的氢氧化钙，继续清洗并干燥即得到目标产物层状磷材料。
实施例17
除使用pH＝1的水溶液作为反应溶剂，其他与实施例16相同。
实施例18
除使用pH＝13的水溶液作为反应溶剂，其他与实施例16相同。
实施例19
除使用乙二醇作为反应溶剂替换水溶剂，其他与实施例16相同。
实施例20
室温下，将0.2克磷化钙粉末加入到溶有1毫升乙二醇的10毫升氮氮二甲基甲酰胺溶液中，球磨2h，加入10％稀盐酸清洗除掉反应生成钙盐，继续清洗并干燥即得到目标产物层状磷材料。
实施例21
将0.2克磷化钙粉末加入到溶有0.05克硝酸银的20毫升氮氮二甲基甲酰胺溶液中，在120℃下反应4h，加入10％稀盐酸清洗除掉反应生成钙盐，继续清洗并干燥即得到目标产物层状磷材料。
实施例22
将0.2克磷化钙粉末加入到溶有0.2克氯化钴的20毫升盐酸溶液中，室温下搅拌30分钟，加入10％稀盐酸清洗除掉反应生成钙盐，继续清洗并干燥即得到目标产物层状磷材料。
实施例23
将1.00克碳化钙加入到10毫升的去离子水(反应溶剂)中，经磁力搅拌十分钟，完成反应。反应结束后，使用10％HCl溶液清洗除掉反应生成的氢氧化钙，离心得到的黑色固体， 干燥后即为目标产物石墨烯。
实施例24
除使用10％稀盐酸作为反应溶剂，其他条件与实施例23相同。
实施例25
除使用10毫升10％稀盐酸作为反应溶剂和2毫升的氮甲基吡咯烷酮(NMP，一种强极性溶剂，常作为层状材料的剥层分散剂)作为分散溶剂，其他条件与实施例23相同。
实施例26
除使用10毫升10％稀盐酸作为反应溶剂和2毫升的N,N-二甲基甲酰胺(DMF，一种强极性溶剂)作为分散溶剂，其他条件与实施例23相同。
实施例27
除使用10毫升无水甲酸作为反应溶剂，其他条件与实施例23相同。
实施例28
除使用10毫升无水乙酸作为反应溶剂，其他条件与实施例23相同。
实施例29
除使用10毫升无水乙酸作为反应溶剂和2毫升的N,N-二甲基甲酰胺(DMF，一种强极性溶剂)作为分散溶剂，其他条件与实施例23相同
实施例30
除使用10毫升无水乙酸作为反应溶剂和2毫升的氮甲基吡咯烷酮(NMP，一种强极性溶剂，常作为层状材料的剥层分散剂)作为分散溶剂，其他条件与实施例23相同。
实施例31
除使用10毫升无水甲醇作为反应溶剂，其他条件与实施例23相同。
实施例32
除使用10毫升乙二醇作为反应溶剂，其他条件与实施例23相同。

Claims (7)

  1. 一种液相法制备层状非金属材料的方法，其特征在于，包括以下步骤：
    (1)常温常压下，将非金属的金属化物加入到含有氧化剂的分散剂中进行反应，得到层状非金属材料和金属盐；其中所述氧化剂选自含有活性质子的物质、氧化性单质或氧化性金属阳离子；
    (2)清洗步骤(1)的反应后的物质以除去所述金属盐，干燥剩余物即得到所述层状非金属材料。
  2. 根据权利要求1的方法，其特征在于，其中所述常温为0-200℃，其中所述常压为1-10大气压。
  3. 根据权利要求1的方法，其特征在于，其中所述的非金属的金属化物为金属硅化物、金属硼化物、金属磷化物、金属碳化物中的一种或几种。
  4. 根据权利要求1的方法，其特征在于，其中所述含有活性质子的物质为含有羟基、氨基、醛基或羧基的物质；其中所述氧化性单质选自S、F2、Cl2、Br2或I2中的一种或几种；其中所述氧化性金属阳离子选自Ag+、Au3+、Cu2+、Pt3+、Fe3+、Co3+或Ni3+中的一种或几种。
  5. 根据权利要求4的方法，其特征在于，其中所述含有羟基、氨基、醛基或羧基的物质为水、乙二醇、甘油、乙二胺、甲醛、乙酸或甲酸中的一种或几种。
  6. 根据权利要求1的方法，其特征在于，其中所述分散剂为氮氮二甲基甲酰胺、氮氮二甲基乙酰胺、氮甲基吡咯烷酮中的一种或几种。
  7. 根据权利要求1或3的方法，其特征在于，其中所述的金属硅化物为硅化钙、硅化镁、硅化钡、硅化锌中的一种或几种；所述金属硼化物为硼化钙、硼化镁、硼化钡、硼化锌中的一种或几种；所述金属磷化物为磷化钙、磷化镁、磷化钡、磷化锌中的一种或几种；所述金属碳化物中为碳化钙、碳化镁、碳化钡、碳化锌中的一种或几种。
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