WO2017133157A1 - 薄膜晶体管传感器及其制备方法 - Google Patents

薄膜晶体管传感器及其制备方法 Download PDF

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WO2017133157A1
WO2017133157A1 PCT/CN2016/085956 CN2016085956W WO2017133157A1 WO 2017133157 A1 WO2017133157 A1 WO 2017133157A1 CN 2016085956 W CN2016085956 W CN 2016085956W WO 2017133157 A1 WO2017133157 A1 WO 2017133157A1
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gate
film transistor
thin film
substrate
transistor sensor
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PCT/CN2016/085956
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English (en)
French (fr)
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田雪雁
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京东方科技集团股份有限公司
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Priority to EP16863200.8A priority Critical patent/EP3413354B1/en
Priority to US15/527,823 priority patent/US10600976B2/en
Publication of WO2017133157A1 publication Critical patent/WO2017133157A1/zh

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/08—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H10K10/482—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors the IGFET comprising multiple separately-addressable gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Definitions

  • At least one embodiment of the present invention provides a thin film transistor sensor and a method of fabricating the same.
  • At least one embodiment of the present invention provides a thin film transistor sensor and a method for fabricating the same, which utilizes a spatial touch change of a first gate and a second gate of a flexible thin film transistor to implement a function of a thin film transistor switch, thereby Achieve the role of the sensor.
  • At least one embodiment of the present invention provides a thin film transistor sensor including a first substrate and a second substrate disposed opposite to each other, the first substrate including a first flexible substrate and a first flexible substrate a first gate; the second substrate includes a second flexible substrate and a second gate on the second flexible substrate; the first flexible substrate further includes an active layer and a source And a drain; the second gate at least partially overlapping the first gate and being spaced apart and configured to cause the first gate and the second after the thin film transistor sensor is pressurized The gate is electrically connected such that the thin film transistor sensor is turned on.
  • At least one embodiment of the present invention also provides a method of fabricating a thin film transistor sensor, the method comprising the following steps:
  • the first substrate and the second substrate are oppositely disposed such that the second gate and the first gate at least partially overlap and are spaced apart and configured to be pressed after the thin film transistor sensor is pressed
  • the first gate and the second gate are electrically connected such that the thin film transistor sensor is turned on.
  • FIG. 1 is a schematic view showing the basic structure of a conventional piezoelectric film sensor
  • FIG. 2 is a schematic structural view (cross-sectional view) of a thin film transistor sensor according to an embodiment of the present invention
  • 3a is a schematic view showing the operation of a thin film transistor sensor according to an embodiment of the present invention (before pressure);
  • 3b is a schematic view showing the operation of a thin film transistor sensor according to an embodiment of the present invention (after being pressed);
  • FIG. 4 is a schematic diagram showing a current-voltage relationship between a source and a drain of a thin film transistor sensor before and after being pressed according to an embodiment of the present invention (a schematic diagram of a circuit principle);
  • FIG. 5a is a schematic top view of a spacer in a thin film transistor sensor according to an embodiment of the present invention.
  • FIG. 5b is a schematic top view of another spacer in a thin film transistor sensor according to an embodiment of the invention.
  • 6a is a cross-sectional view of another thin film transistor sensor according to an embodiment of the present invention.
  • 6b is a cross-sectional view of another thin film transistor sensor according to an embodiment of the present invention.
  • FIG. 7 is a cross-sectional view of a thin film transistor sensor according to another embodiment of the present invention.
  • FIG. 8a is a cross-sectional view of a flexible gate insulating layer and a spacer in a thin film transistor sensor array according to an embodiment of the present invention
  • FIG. 8b is a cross-sectional view of a flexible gate insulating layer and a spacer integrally formed in a thin film transistor sensor array according to an embodiment of the invention.
  • Pressure sensors can be based on a variety of operating principles, including capacitive, piezoresistive, piezoelectric, etc., and typical piezoelectric thin film sensors operate primarily based on piezoelectric effects.
  • the piezoelectric effect means, for example, that when some dielectric is deformed by an external force in a certain direction, polarization occurs inside, and positive and negative opposite charges appear on its opposite surfaces. When the external force is removed, it will return to the uncharged state. This phenomenon is called the positive piezoelectric effect.
  • a type of sensor developed based on the dielectric piezoelectric effect is called a piezoelectric sensor.
  • the basic structure, process and performance of a typical pressure sensor are difficult to achieve the desired biocompatibility of the human body due to lack of flexibility and flexibility. It is difficult to match the human body and the human body of the wearable device. It is even more difficult to achieve the possibility of implanting medical care in the body.
  • a basic structure of a piezoelectric film sensor is that a piezoelectric film is sandwiched between conductive films as upper and lower electrodes to form a three-layer structure.
  • a lower electrode 02 and a piezoelectric film are sequentially disposed on a silicon substrate 01.
  • the material of the upper electrode 04, the lower electrode 02, and the upper electrode 04 may include, for example, at least one of Au, Ag, Pt, and Ti
  • the piezoelectric film 03 may include, for example, lead zirconate titanate (PZT) or barium zirconate titanate. At least one of (BZT).
  • PZT lead zirconate titanate
  • BZT barium zirconate titanate
  • Active Thin Film Transistor is considered to be an ideal choice for signal transmission and control of flexible pressure sensors.
  • flexible pressure sensors help to reduce the power consumption of the device, and on the other hand, it can effectively reduce the transmission in the sensor array. Crosstalk between the sensed signals.
  • Flexible pressure sensors can be potentially applied to the construction of artificial electronic skin, which has a very broad market prospect in the future health care field.
  • flexible pressure sensors are also the core components of flexible touch screen displays and intelligent robot applications, all of which demonstrate the potential application value of flexible pressure sensors.
  • the embodiment of the invention enables a new piezoelectric sensing principle and design, so that the pressure sensor achieves an excellent sensing effect.
  • At least one embodiment of the present invention provides a thin film transistor sensor including a first substrate and a second substrate disposed opposite to each other, the first substrate including a first flexible substrate and a first gate disposed on the first flexible substrate a second substrate comprising a second flexible substrate and a second gate disposed on the second flexible substrate; the second gate and the first gate are at least partially facing (at least partially overlapping) and at the thin film transistor
  • the sensors are insulated from each other when in a non-operating state; an active layer, a source, and a drain are further disposed on the first flexible substrate.
  • the second gate and the first gate are at least partially opposite and spaced apart and configured to electrically connect the first gate and the second gate after the thin film transistor sensor is pressed, thereby causing the thin film transistor sensor to be guided through.
  • the thin film transistor sensor utilizes a spatial touch change of the first gate and the second gate of the flexible thin film transistor to realize the function of the thin film transistor switch, thereby realizing the function of the sensor.
  • the thin film transistor sensor is controlled according to the external pressure, so that the external weak pressure signal change can also be converted into a sensitive change of the electrical signal.
  • At least one embodiment of the present invention provides a method of fabricating a thin film transistor sensor, the method comprising the following steps:
  • An active layer and a source and a drain electrically connected to the active layer are further formed on the first flexible substrate;
  • the first substrate and the second substrate are disposed opposite each other such that the second gate is at least partially opposite the first gate and insulated from each other when the thin film transistor sensor is in an inoperative state.
  • the second gate is at least partially directly opposite (at least partially overlapped) with the first gate and is spaced apart and configured to electrically connect the first gate and the second gate after the thin film transistor sensor is stressed, thereby The thin film transistor sensor is turned on.
  • the thin film transistor sensor can be prepared by a common process, is simple, and has low manufacturing and maintenance costs.
  • the present embodiment provides a thin film transistor sensor 12, as shown in FIG. 2, including a first substrate 10 and a second substrate 20 disposed opposite to each other.
  • the first substrate 10 includes a first flexible substrate 101 and a first gate 102 disposed on the inner side of the first flexible substrate 101.
  • the second substrate 20 includes a second flexible substrate 201 and a second gate 202 disposed on the inner side of the second flexible substrate 201.
  • the second gate 202 is at least partially facing (at least partially overlapping) the first gate 102 and is insulated from each other when the thin film transistor sensor 12 is in an inoperative state.
  • An active layer 103 facing the first gate and a source 104 and a drain 105 electrically connected to the active layer 103 are further disposed on the first flexible substrate 101.
  • the second gate and the first gate are at least partially opposite and spaced apart and configured to electrically connect the first gate and the second gate after the thin film transistor sensor is pressed, thereby causing the thin film transistor sensor to be guided through.
  • the second gate 202 and the first gate 102 are at least partially directly opposite (at least partially overlapped) to have a portion that faces (overlaps) in a direction perpendicular to the first flexible substrate 101.
  • the orthographic projection of the second gate 202 on the first flexible substrate 101 and the orthographic projection of the first gate 102 on the first flexible substrate 101 at least partially overlap.
  • the second gate 202 and the first gate 102 are at least partially aligned, such that the second gate 202 and the first gate 102 can be electrically connected when the thin film transistor sensor 12 is under pressure, for example, can be in contact with conduction, but is not limited thereto.
  • the source 104 and the drain 105 may be disposed on both sides of the active layer 103 and connected to the active layer 103, respectively.
  • a thin film transistor typically includes a gate, a gate insulating layer, an active layer, a source, and Drain.
  • insulating from each other means, for example, a non-electrical connection; flexibility means, for example, being bendable; an operating state is, for example, a state in which the thin film transistor is turned on, and an inactive state is, for example, a state in which the thin film transistor is not turned on (closed) .
  • the thin film transistor sensor utilizes a spatial touch change of the first gate and the second gate of the flexible thin film transistor to realize the function of the thin film transistor switch, thereby realizing the function of the sensor.
  • the thin film transistor sensor is controlled according to the external pressure, so that the external weak pressure signal change can also be converted into a sensitive change of the electrical signal.
  • a source 104, a drain 105, and an active layer 103 may be disposed on the inner side of the first flexible substrate 101.
  • the source 104, the drain 105, and the active layer 103 may be disposed on the outer side of the first flexible substrate 101, which is not limited herein.
  • the inner side refers to, for example, the side of the first substrate 10 facing the second substrate 20, or the side of the second substrate 20 facing the first substrate 10
  • the outer side refers to, for example, the first substrate 10 facing away from (away from) One side of the second substrate 20, or the side of the second substrate 20 facing away from (away from) the first substrate 10.
  • the positions of the source 104 and the drain 105 and the active layer 103 are not limited to those shown in the drawing.
  • the active layer 103 may be formed first, and the source 104 and the drain 105 may be formed.
  • the embodiments of the present disclosure do not limit this.
  • the second gate 202 is electrically connected to a gate line for providing a gate signal to the thin film transistor.
  • the second gate voltage is Vg
  • the voltage difference between the drain and the source is Vds
  • the current between the drain and the source is Ids
  • the first gate of the thin film transistor sensor is before being pressed.
  • the pole 102 and the second gate 202 are insulated from each other, the first gate 102 and the second gate 202 are in a non-electrically connected state, and the thin film transistor is in a closed state.
  • the first gate 102 and the second gate 202 are not in contact with each other, and the first gate voltage of the thin film transistor is 0V.
  • the first gate 102 and the second gate 202 are electrically connected.
  • the first gate 102 and the second gate 202 are in contact with each other, and the gate signal is transmitted through the second gate 202.
  • the second gate 202 can be separated from the first gate 102 by the elastic force and/or the restoring force, thereby returning to the unpressurized state, the first gate.
  • the state between 102 and the second gate 202 is restored to be insulated from each other.
  • the material of the first flexible substrate and/or the second flexible substrate is polydimethylsiloxane (PDMS), polyimide (PI), polyethylene naphthalate, poly pair Xylene or polymethyl Methyl acrylate (PMMA), but is not limited thereto.
  • the material of the active layer 103 includes semiconducting carbon nanotubes (for example, single-walled carbon nanotubes or multi-walled carbon nanotubes) or an organic semiconductor material, but is not limited thereto.
  • the material of the source 104 and the drain 105 includes metallic carbon nanotubes (for example, single-walled carbon nanotubes or multi-walled carbon nanotubes, etc.) or metals, but is not limited thereto.
  • carbon nanotubes have excellent stretchability and excellent photoelectric properties. Carbon nanotube materials have become the leader in bio-nanomaterials due to their high stability and good biocompatibility. Carbon nanotubes can be used as a basic material for preparing tissue engineering cell growth scaffolds, artificial blood vessels, and drug carriers. In the embodiments of the present disclosure, for example, Single-Walled Carbon Nanotubes (SWCNTs), or, for example, Multi-Walled Carbon Nanotubes (MWCNTs), etc., according to structural parameters thereof, are used. The preparation process and the like may be metallic or semiconducting. The application prospects of carbon nanotubes in medicine and other fields are very promising.
  • SWCNTs Single-Walled Carbon Nanotubes
  • MWCNTs Multi-Walled Carbon Nanotubes
  • the materials of the first gate 102 and the second gate 202 include metal or carbon black.
  • the first gate 102 is made of a metal, for example, one or more of palladium (Pd), titanium, tantalum, chromium, aluminum, aluminum alloy, copper, copper alloy, molybdenum, and molybdenum aluminum alloy may be included. But it is not limited to this. It should be noted that Pd is a metal element which is generally considered to have good biocompatibility, and therefore is preferably used as a material of the first gate electrode 102 and the second gate electrode 202.
  • the thin film transistor sensor provided in the first embodiment of the present embodiment further includes a spacer 30 disposed between the first substrate 10 and the second substrate 20 to space the first gate 102 and the second gate 202 apart.
  • the spacer 30 is disposed around the edge of the first gate 102, and the first substrate 10, the second substrate 20, and the spacer 30 may form a sealed space 222, and the sealed space may be disposed. Air, nitrogen or inert gas.
  • the spacer 30 may include a plurality of discrete sub-isolators 301, and four sub-isolators 301 disposed around the first gate 102 are illustrated in FIG. 5b, but are not limited thereto.
  • the first gate 102 and the spacer 30 are as shown in FIG. 5b, a sealed space is not formed between the first substrate 10, the second substrate 20, and the spacer 30. That is, the first substrate 10, the second substrate 20, and the spacer 30 may be a closed space or a closed space, which is not limited by the embodiments of the present disclosure.
  • the spacer 30 is not limited to the one shown in the drawing, and the shape of the first gate 102 is not limited to the shape shown in FIGS. 5a and 5b.
  • the material of the spacer 30 includes polymethyl methacrylate (PMMA), polyimide (PI) or polydimethylsiloxane (PDMS). But it is not limited to this.
  • the spacer 30 can be an elastic spacer, including an elastic spacer or an elastic spacer ball or the like. Elasticity means, for example, that it can be stretched and compressed.
  • PDMS polydimethylsiloxane
  • PMMA poly(methyl methacrylate)
  • the thickness of the crosslinked PMMA can be conveniently adjusted as a function of the exposure electron beam dose so that a sacrificial layer of 3D PMMA can be obtained by 2D electron beam lithography.
  • PMMA has excellent charge storage capability and can also be used in dielectrics in devices.
  • PMMA polymer film softness such as PDMS. PDMS and PMMA are preferred materials for the spacer 30.
  • the source 104, the drain 105, and the active layer 103 are disposed on the inner side of the first flexible substrate 101, and the first gate 102 and the source 104 are provided.
  • a flexible gate insulating layer 106 is disposed between the drain 105 and the active layer 103, and the flexible gate insulating layer 106 is integrally formed with the spacer 30.
  • the flexible gate insulating layer 106 and the spacer 30 can be formed at one time, saving the process.
  • the material of the flexible gate insulating layer 106 may include PMMA, but is not limited thereto.
  • a first thickening layer 107 is disposed on a side of the first gate 102 facing the second gate 202, or as shown in FIG. 6b.
  • a second thickening layer 203 is disposed on a side of the second gate 202 facing the first gate 102, and a first thickening layer 107 may be disposed on a side of the first gate 102 facing the second gate 202 and
  • a second thickening layer 203 is disposed on a side of the second gate 202 facing the first gate 102, a thickness of the first thickening layer 107, a thickness of the second thickening layer 203 or a first thickening layer 107 and a second increase
  • the sum of the thicknesses of the thick layers 203 is smaller than the spacing between the first gate 102 and the second gate 202.
  • the first thickening layer 107 and/or the second thickening layer 203 can further enhance the ability of the thin film transistor sensor to sense pressure. Make pressure perception easier.
  • the first thickening layer 107 can be integrally formed with the first gate electrode 102
  • the second thickening layer 203 can be integrally formed with the second gate electrode 202. This setting simplifies the manufacturing process.
  • the materials of the first flexible substrate and the second flexible substrate are all polydimethylsiloxane (PDMS), and the active layer 103 is made of semiconductor.
  • the single-walled carbon nanotubes, the source 104 and the drain 105 are made of metallic single-walled carbon nanotubes or Pd, and the first gate 102 and the second gate 202 are made of palladium (Pd), flexible gate insulation.
  • the layer 106 and the spacer 30 are integrally formed, and the materials of the flexible gate insulating layer 106 and the spacer 30 are both Polymethyl methacrylate (PMMA).
  • the thin film transistor sensor provided by the present example adopts a flexible base substrate, has a flexible flexible gate insulating layer, and the active layer, the source and the drain are both elastic, and an elastic flexible sensor compatible with the human body can be obtained (for example, A fully elastic flexible thin film transistor is obtained, and has an excellent sensing effect.
  • the flexible flexible sensor can be used as a flexible dynamic strain sensor. Suitable for medical monitoring and therapeutic use in the field of medical and wearable devices, in vitro or implanted inside the body.
  • the thickness of the first flexible substrate and the second flexible substrate is greater than 1 ⁇ m, for example, may be 2 ⁇ m.
  • the thickness of the source 104 and the drain 105 is greater than 50 nm
  • the thickness of the active layer 103 is less than 10 nm
  • the thickness of the first gate 102 and the second gate 202 is approximately 40 nm to 100 nm, for example, may be 70 nm.
  • the thickness of the flexible gate insulating layer 106 is less than 100 nm
  • the height of the spacer 30 may be 0.05 mm to 0.1 mm.
  • the spacing between the first gate 102 and the second gate 202 is approximately 0.07 mm - 0.1 mm.
  • the portion of the active layer between the source and the drain is a channel.
  • the channel length can be about 50 ⁇ m to 100 ⁇ m. It should be noted that the above numerical values are merely illustrative and not limiting, and other numerical values may be employed.
  • the thin film transistor sensor provided in the first embodiment of the present embodiment is suitable for a test pressure range of less than 0.5 K Pa, but is not limited thereto.
  • This embodiment also provides a thin film transistor sensor array including any of the above thin film transistor sensors.
  • the thin film transistor sensor element and the array thereof provided by the embodiment not only have the sensing force, but also the pressure received by the elastic thin film transistor sensor element is transmitted to the outside, the external signal is obtained, and then the reaction is made.
  • the thin film transistor sensor element and the array thereof provided by the embodiment can have soft and super sensitive characteristics, can sense touch (external pressure) and transmit the sensed touch (external pressure) signal, and are expected to be artificial electronic skin, prosthesis Robots, medical safety and medical devices have been further applied.
  • the thin film transistor sensor provided by the embodiment is not insulated from each other when the thin film transistor sensor 12 is in a non-operating state by providing spacers around the edge of the first gate (can be turned on after being pressed) ).
  • a pressure conductive material 40 is disposed between the first substrate 10 and the second substrate 20, thereby interposing between the first gate 102 and the second gate 202. Separated, and the pressure conductive material 40 conducts when applied equal to or exceeds a predetermined pressure.
  • the predetermined pressure may be, for example, a pressure that causes the pressure conductive material to change from an insulated state to a conductive state.
  • the pressure conductive material is in an insulated state without being subjected to pressure or subjected to a pressure not exceeding a predetermined pressure, thereby insulating the first gate 102 and the second grid 202 from each other, and under the condition that the pressure is equal to or exceeds a predetermined pressure It may be in a conducting state such that the first gate 102 and the second gate 202 are electrically connected.
  • the pressure conductive material 40 may be a conductive rubber, a conductive plastic, or the like.
  • the conductive rubber is uniformly distributed in the silicone rubber by silver plating, silver plating, silver, and the like, and the conductive particles are contacted by pressure to achieve a good electrical conductivity.
  • Embodiment 1 For the rest, reference may be made to the description of Embodiment 1, and details are not described herein again.
  • This embodiment provides a method for fabricating a thin film transistor sensor, and the method may include the following steps:
  • An active layer 103 opposite to the first gate 102 and a source 104 and a drain 105 electrically connected to the active layer 103 are further formed on the first flexible substrate 101;
  • the first substrate 10 and the second substrate 20 are disposed opposite each other such that the second gate 202 and the first gate 102 are at least partially opposed to each other and insulated from each other when the thin film transistor sensor is in an inoperative state.
  • the first substrate 10 and the second substrate 20 may be pressed by a hot press method.
  • the second gate and the first gate are at least partially opposite and spaced apart and configured to electrically connect the first gate and the second gate after the thin film transistor sensor is pressed, thereby causing the thin film transistor sensor to be guided through.
  • the method for fabricating the thin film transistor sensor provided by the example of the embodiment further includes forming the spacer 30 disposed between the first substrate 10 and the second substrate 20 to space the first gate 102 and the second gate 202. open.
  • a thin film transistor sensor such as that described in the first embodiment can be obtained.
  • the source 104, the drain 105, and the active layer 103 are formed on the inner side of the first flexible substrate 101, and the first gate 102 is A flexible gate insulating layer 106 is formed between the source 104, the drain 105, and the active layer 103, and the flexible gate insulating layer 106 is integrally formed with the spacer 30.
  • the first thickening layer 107 is formed on the side of the first gate 102 facing the second gate 202, and/or the second gate 202 is A second thickening layer 203 is formed on a side facing the first gate 102, and the thickness of the first thickening layer 107 is thick.
  • the thickness of the second thickening layer 203 or the sum of the thicknesses of the first thickening layer 107 and the second thickening layer 203 is smaller than the spacing between the first gate 102 and the second gate 202.
  • the first thickening layer 107 is integrally formed with the first gate electrode 102, and/or the second thickening layer 203 and the second gate electrode 202 are integrally formed. .
  • the method for preparing the thin film transistor sensor provided in the first embodiment of the present embodiment includes the following steps.
  • the first substrate 10 is prepared.
  • the first substrate 10 is prepared, for example, comprising the steps of: forming a first gate 102 on the inner side of the first flexible substrate 101 by a patterning process; and forming a first gate on the first flexible substrate 101 by a patterning process.
  • the active layer 103 facing 102 and the source 104 and the drain 105 electrically connected to the active layer 103.
  • a second substrate 20 is prepared.
  • the preparation of the second substrate includes, for example, a step of forming a second gate electrode 202 on the inner side of the second flexible substrate substrate 201 by a patterning process.
  • the first substrate 10 and the second substrate 20 are disposed opposite each other such that the second gate 202 and the first gate 102 are at least partially opposed to each other and insulated from each other when the thin film transistor sensor is in an inoperative state.
  • the first substrate 10 and the second substrate 20 may be pressed by a hot press method.
  • the method for preparing the thin film transistor sensor provided in the first embodiment of the present embodiment includes the following steps.
  • a first substrate is prepared.
  • the preparation of the first substrate includes, for example, the steps of: preparing a CNTs source-drain electrode by using a solution method on a PDMS elastic flexible substrate (using a single-walled carbon nanotube solution material having a high metal content and a large concentration). After the source and drain electrodes are patterned, the active layer of CNTs is fabricated by a solution process (using a single-walled carbon nanotube material having a semiconductor content higher than 99.9%). After the patterning of the active layer of the CNTs is completed, a PMMA film is formed, and exposed and developed through a mask to integrally form a gate insulating layer and a spacer.
  • the mask when the gate insulating layer and the spacer are integrally formed, the mask can adopt a multi-tone mask, and the PMMA film can be exposed by a multi-tone mask, and developed after exposure to obtain an integrated gate insulating layer and a spacer.
  • the multi-tone mask includes a gray tone or halftone mask.
  • a proximity exposure machine can be used to complete the gate insulating layer and the spacer.
  • One-piece production After the gate insulating layer and the spacer are formed, the Pd electrode is formed by a thermal evaporation method through a reticle, and at the same time, patterning is performed to form a first gate, and the first gate of the layer is not applied with a voltage lead.
  • the solution process includes, for example, inkjet-printing, but is not limited thereto.
  • a second substrate is prepared.
  • the preparation of the second substrate includes, for example, the steps of: performing Pd electrode on the PDMS elastic flexible insulating layer by thermal evaporation, and performing patterning by using a photolithography process to form a second gate, and the second gate is applied with voltage lead.
  • the first substrate and the second substrate are pressed together by a hot pressing method to form a thin film transistor sensor.
  • the pressing can be carried out under a certain atmosphere, for example, air, nitrogen or an inert gas atmosphere. Therefore, when the first substrate, the second substrate, and the spacer constitute a sealed space, the sealed space is filled with air, nitrogen, or an inert gas, but is not limited thereto.
  • a single thin film transistor sensor can be fabricated by using the method in the embodiment of the present disclosure, and a thin film transistor sensor array can also be fabricated, which is not limited herein.
  • a thin film transistor sensor array When the thin film transistor sensor array is formed, one thin film transistor sensor may be disposed every 0.5 mm ⁇ 0.5 mm, but is not limited thereto.
  • Figure 8a shows a cross-sectional view of a flexible gate insulating layer and spacer in a thin film transistor sensor array, the dashed portion being a cross-sectional view of a flexible gate insulating layer and spacer corresponding to a thin film transistor sensor.
  • Figure 8b shows an integrally formed flexible gate insulating layer and spacer.
  • the method for fabricating the thin film transistor sensor or the array thereof is not limited to the method given above, and the patterning or patterning process may include only a photolithography process, or a photolithography process and an etching step. Or it may include printing, ink jetting, and the like for forming a predetermined pattern.
  • the photolithography process refers to a process including film formation, exposure, development, and the like, and forms a pattern by using a photoresist, a mask, an exposure machine, or the like.
  • the corresponding patterning process can be selected in accordance with the structure formed in the embodiments of the present invention.
  • the thin film transistor sensor provided by the embodiment is not insulated from each other when the thin film transistor sensors are in a non-operating state by providing spacers around the edges of the first gate. Rather, a pressure conductive material is formed between the first substrate 10 and the second substrate 20 to space the first gate 102 and the second gate 202 apart, and the pressure conductive material is Conductive when applied at or above a predetermined pressure.
  • a thin film transistor sensor such as that described in the second embodiment can be obtained.
  • the pressure conductive material refer to the description of the second embodiment, and details are not described herein again.
  • the spacer 30 or the pressure conductive material 40 is formed to insulate the thin film transistor sensor 12 from each other when in the non-operating state (which can be turned on after being pressed) will be described as an example.
  • the thin film transistor sensor 12 may be insulated from each other in a non-operating state, which is not limited by the embodiment of the present disclosure.

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Abstract

一种薄膜晶体管传感器及其制备方法。该薄膜晶体管传感器包括彼此相对设置的第一基板(10)和第二基板(20)，第一基板(10)包括第一柔性衬底基板(101)和设置在第一柔性衬底基板上的第一栅极(102)，第二基板(20)包括第二柔性衬底基板(201)以及设置在第二柔性衬底基板上的第二栅极(202)；在第一柔性衬底基板(101)上还设置有源层(103)、源极(104)和漏极(105)，第二栅极(202)与第一栅极(102)至少部分重叠且被间隔开并被配置来在薄膜晶体管传感器受压后可使得第一栅极(102)和第二栅极(202)电连接，从而使得薄膜晶体管传感器导通。该薄膜晶体管传感器利用柔性薄膜晶体管的第一栅极与第二栅极的空间点触变化，实现薄膜晶体管开关的功能，从而实现传感器的作用。

Description

薄膜晶体管传感器及其制备方法 技术领域
本发明至少一实施例提供涉及一种薄膜晶体管传感器及其制备方法。
背景技术
近年来，随着智能可穿戴设备、与人体相关的体外医疗设备以及体内植入医疗设备的迅速发展，压力传感器得到越来越多的关注。通过设置压力传感器，可以感知外部压力信号的变化。
发明内容
本发明至少一实施例提供涉及一种薄膜晶体管传感器及其制备方法，该薄膜晶体管传感器利用柔性薄膜晶体管的第一栅极与第二栅极的空间点触变化，实现薄膜晶体管开关的功能，从而实现传感器的作用。
本发明至少一实施例提供一种薄膜晶体管传感器，包括彼此相对设置的第一基板和第二基板，所述第一基板包括第一柔性衬底基板和在所述第一柔性衬底基板上的第一栅极；所述第二基板包括第二柔性衬底基板和在所述第二柔性衬底基板上的第二栅极；所述第一柔性衬底基板还包括有源层、源极和漏极；所述第二栅极与所述第一栅极至少部分重叠且被间隔开并被配置为在所述薄膜晶体管传感器受压后可使得所述第一栅极和所述第二栅极电连接，从而使得所述薄膜晶体管传感器导通。
本发明至少一实施例还提供一种薄膜晶体管传感器的制备方法，该方法包括如下步骤：
在第一柔性衬底基板上形成第一栅极以制备第一基板；
在第二柔性衬底基板上形成第二栅极以制备第二基板；
在所述第一柔性衬底基板上还形成有源层、源极和漏极；
将所述第一基板和所述第二基板相对设置，使得所述第二栅极与所述第一栅极至少部分重叠且被间隔开并被配置为在所述薄膜晶体管传感器受压后可使得所述第一栅极和所述第二栅极电连接，从而使得所述薄膜晶体管传感器导通。
附图说明
为了更清楚地说明本发明实施例的技术方案，下面将对实施例的附图作简单地介绍，显而易见地，下面描述中的附图仅仅涉及本发明的一些实施例，而非对本发明的限制。
图1为通常的压电薄膜传感器的基本结构示意图；
图2为本发明一实施例提供的一种薄膜晶体管传感器的结构示意图(剖示图)；
图3a为本发明一实施例提供的薄膜晶体管传感器的工作示意图(受压前)；
图3b为本发明一实施例提供的薄膜晶体管传感器的工作示意图(受压后)；
图4为本发明一实施例提供的一种薄膜晶体管传感器受压前后源漏极间电流-电压关系示意图(电路原理工作示意图)；
图5a为本发明一实施例提供的薄膜晶体管传感器中一种隔离件的俯视示意图；
图5b为本发明一实施例提供的薄膜晶体管传感器中另一种隔离件的俯视示意图；
图6a为本发明一实施例提供的另一种薄膜晶体管传感器的剖示图；
图6b为本发明一实施例提供的另一种薄膜晶体管传感器的剖示图；
图7为本发明另一实施例提供的一种薄膜晶体管传感器的剖示图；
图8a为本发明一实施例提供的薄膜晶体管传感器阵列中柔性栅极绝缘层和隔离件的剖视图；
图8b为本发明一实施例提供的薄膜晶体管传感器阵列中一体成形的柔性栅极绝缘层和隔离件剖视图。
附图标记：
01-硅衬底；02-下电极；03-压电薄膜；04-上电极；10-第一基板；12-薄膜晶体管传感器；20-第二基板；30-隔离件；40-压力导电材料；101-第一柔性衬底基板；102-第一栅极；103-有源层(半导体层)；104-源极；105-漏极；106-柔性栅极绝缘层；201-第二柔性衬底基板；202-第二栅极；301-子隔离件；107-第一增厚层；203-第二增厚层；222-密闭空间。
具体实施方式
为使本发明实施例的目的、技术方案和优点更加清楚，下面将结合本发明实施例的附图，对本发明实施例的技术方案进行清楚、完整地描述。显然，所描述的实施例是本发明的一部分实施例，而不是全部的实施例。基于所描述的本发明的实施例，本领域普通技术人员在无需创造性劳动的前提下所获得的所有其他实施例，都属于本发明保护的范围。
除非另外定义，本公开使用的技术术语或者科学术语应当为本发明所属领域内具有一般技能的人士所理解的通常意义。本公开中使用的“第一”、“第二”以及类似的词语并不表示任何顺序、数量或者重要性，而只是用来区分不同的组成部分。同样，“一个”、“一”或者“该”等类似词语也不表示数量限制，而是表示存在至少一个。“包括”或者“包含”等类似的词语意指出现该词前面的元件或者物件涵盖出现在该词后面列举的元件或者物件及其等同，而不排除其他元件或者物件。“连接”或者“相连”等类似的词语并非限定于物理的或者机械的连接，而是可以包括电性的连接，不管是直接的还是间接的。“上”、“下”、“左”、“右”等仅用于表示相对位置关系，当被描述对象的绝对位置改变后，则该相对位置关系也可能相应地改变。
压力传感器可基于多种工作原理，包括电容式、压阻式、压电式等，通常的压电薄膜传感器，主要是基于压电效应进行工作。压电效应例如是指：某些电介质在沿一定方向上受到外力的作用而变形时，其内部会产生极化现象，同时在它的两个相对表面上出现正负相反的电荷。当外力去掉后，它又会恢复到不带电的状态，这种现象称为正压电效应。依据电介质压电效应研制的一类传感器称为压电传感器。通常的压力传感器的基本结构，工艺和性能，由于没有具备柔性及弹性，也很难达到人体所需生物兼容性。很难与人体相关的医疗体外及可穿戴设备人性化的相匹配。更难达到体内植入医疗的可能性。
一种压电薄膜传感器的基本结构是压电薄膜夹在作为上下电极的导电膜之间构成三层结构，如图1所示，在硅衬底01上依次设置有下电极02、压电薄膜03和上电极04，下电极02和上电极04的材质例如可包括Au、Ag、Pt、Ti中的至少一种，压电薄膜03例如可包括锆钛酸铅(PZT)、锆钛酸钡(BZT)中的至少一种。通常的方法中，与传感器元件相关的薄膜在硅衬底 01上制作完成。硅芯片在制作压电薄膜层时，通常采用高温600℃～700℃的退火工艺，其余相关集成电路可采用通常的半导体工艺制作。通常的压力传感器的基本结构，工艺和性能，由于没有具备柔性及弹性，也很难达到人体所需生物兼容性，很难与人体相关的医疗体外及可穿戴设备人性化的相匹配，更难达到体内植入医疗的可能性。
有源薄膜晶体管(Active Thin Film Transistor)被认为是实现柔性压力传感器信号传输和控制的理想选择，柔性压力传感器一方面有助于降低器件的功耗，另一方面在传感器阵列中可以有效降低传感信号之间的串扰。柔性压力传感器可潜在应用于构建人造电子皮肤，在未来健康医疗领域具有非常广阔的市场前景。此外，柔性压力传感器还是柔性触屏显示以及智能机器人应用中的核心元器件，这些都表明了柔性压力传感器的潜在应用价值。
如何选择合适的柔性有源薄膜晶体管，实现柔性压力传感单元与有源薄膜晶体管的有效集成，以及如何实现柔性压力传感器的有源输出和控制，将成为柔性压力传感器研究中的一个重要方向。
本发明实施例启用新的压电感应原理及设计，使得压力传感器达到优良的感应效果。
本发明至少一实施例提供一种薄膜晶体管传感器，包括彼此相对设置的第一基板和第二基板，第一基板包括第一柔性衬底基板和设置在第一柔性衬底基板上的第一栅极，第二基板包括第二柔性衬底基板以及设置在第二柔性衬底基板上的第二栅极；第二栅极与第一栅极至少部分正对(至少部分重叠)且在薄膜晶体管传感器处于非工作状态时彼此绝缘；在第一柔性衬底基板上还设置有有源层、源极和漏极。例如，第二栅极与第一栅极至少部分正对且被间隔开并被配置来在薄膜晶体管传感器受压后可使得第一栅极和第二栅极电连接，从而使得薄膜晶体管传感器导通。
该薄膜晶体管传感器利用柔性薄膜晶体管的第一栅极与第二栅极的空间点触变化，实现薄膜晶体管开关的功能，从而实现传感器的作用。该薄膜晶体管传感器根据外部压力的给予来控制，从而实现外部微弱压力信号变化也能转变为电学信号的敏感变化。
本发明至少一实施例提供一种薄膜晶体管传感器的制备方法，该方法包括如下步骤：
在第一柔性衬底基板上形成第一栅极以制备第一基板；
在第二柔性衬底基板上形成第二栅极以制备第二基板；
在第一柔性衬底基板上还形成有源层以及与有源层电连接的源极和漏极；
将第一基板和第二基板相对设置，使得第二栅极与第一栅极至少部分正对且在薄膜晶体管传感器处于非工作状态时彼此绝缘。例如，第二栅极与第一栅极至少部分正对(至少部分重叠)且被间隔开并被配置来在薄膜晶体管传感器受压后可使得第一栅极和第二栅极电连接，从而使得薄膜晶体管传感器导通。
该薄膜晶体管传感器的制备方法可采用通常的工艺，简便易行，制造和维护成本低。
下面通过几个实施例进行说明。
实施例一
本实施例提供一种薄膜晶体管传感器12，如图2所示，包括彼此相对设置的第一基板10和第二基板20。第一基板10包括第一柔性衬底基板101和设置在第一柔性衬底基板101内侧上的第一栅极102。第二基板20包括第二柔性衬底基板201以及设置在第二柔性衬底基板201内侧上的第二栅极202。第二栅极202与第一栅极102至少部分正对(至少部分重叠)且在薄膜晶体管传感器12处于非工作状态时彼此绝缘。在第一柔性衬底基板101上还设置有与第一栅极正对的有源层103以及与有源层103电连接的源极104和漏极105。例如，第二栅极与第一栅极至少部分正对且被间隔开并被配置来在薄膜晶体管传感器受压后可使得第一栅极和第二栅极电连接，从而使得薄膜晶体管传感器导通。例如，第二栅极202与第一栅极102至少部分正对(至少部分重叠)是指在垂直于第一柔性衬底基板101的方向上具有正对(重叠)的部分。或者，第二栅极202在第一柔性衬底基板101上的正投影和第一栅极102在第一柔性衬底基板101上的正投影至少部分重叠。
第二栅极202与第一栅极102至少部分正对可使得薄膜晶体管传感器12在受压时第二栅极202与第一栅极102可以电连接，例如可以接触导通，但不限于此。例如，源极104和漏极105可分设在有源层103的两侧并各自与有源层103相连。通常薄膜晶体管包括栅极、栅极绝缘层、有源层、源极和 漏极。本公开的实施例中，彼此绝缘例如是指非电连接；柔性例如是指可弯曲；工作状态例如是指薄膜晶体管打开的状态，非工作状态例如是指薄膜晶体管没被打开(关闭)的状态。该薄膜晶体管传感器利用柔性薄膜晶体管的第一栅极与第二栅极的空间点触变化，实现薄膜晶体管开关的功能，从而实现传感器的作用。该薄膜晶体管传感器根据外部压力的给予来控制，从而实现外部微弱压力信号变化也能转变为电学信号的敏感变化。
例如，如图2所示，可在第一柔性衬底基板101的内侧上设置源极104、漏极105和有源层103。亦可在第一柔性衬底基板101的外侧上设置源极104、漏极105和有源层103，在此不作限定。本公开的实施例中，内侧例如是指第一基板10朝向第二基板20的一侧，或者第二基板20朝向第一基板10的一侧，外侧例如是指第一基板10背离(远离)第二基板20的一侧，或者第二基板20背离(远离)第一基板10的一侧。需要说明的是，源极104和漏极105以及有源层103的位置不限于图中所示，例如，还可以先形成有源层103，再形成源极104和漏极105。本公开的实施例对此不作限定。
例如，第二栅极202与栅线电连接，栅线用以为薄膜晶体管提供栅极信号。如图3a所示，第二栅极电压为Vg，漏极与源极之间的电压差为Vds，漏极与源极之间的电流为Ids，薄膜晶体管传感器在受压前，第一栅极102和第二栅极202彼此绝缘，第一栅极102和第二栅极202处于非电连接的状态，薄膜晶体管处于关闭状态。例如，第一栅极102和第二栅极202互不接触，薄膜晶体管的第一栅极电压为0V。在受压后，如图3b所示，第一栅极102和第二栅极202电连接，例如，第一栅极102和第二栅极202相互接触，栅极信号经由第二栅极202传导至第一栅极102，薄膜晶体管的第一栅极电压等于第二栅极电压，例如均为恒压，薄膜晶体管可被开启。从图4中可以看出，受压前，Ids＝0V，源极和漏极之间几乎没有电流通过，受压后，源极和漏极之间导通，有电流通过。从而可以感知压力信号，并传输感知到的压力信号。压力去除后，第二栅极202可在弹性作用力和/或回复力的作用下，使得第二栅极202与第一栅极102分离，从而恢复为不受压的状态，第一栅极102和第二栅极202之间恢复为彼此绝缘的状态。
例如，第一柔性衬底基板和/或第二柔性衬底基板的材质为聚二甲基硅氧烷(PDMS)、聚酰亚胺(PI)、聚萘二甲酸乙二醇酯、聚对二甲苯或聚甲基 丙烯酸甲酯(PMMA)，但不限于此。例如，有源层103材质包括半导体性碳纳米管(例如单壁碳纳米管或多壁碳纳米管等)或有机半导体材料，但不限于此。例如，源极104和漏极105的材质包括金属性碳纳米管(例如单壁碳纳米管或多壁碳纳米管等)或金属，但不限于此。
需要说明的是，碳纳米管(Carbon Nanotubes，CNTs)具有优良的伸缩性，光电性能非常优秀。碳纳米管材料以其较高的稳定性，良好的生物相容性成为生物纳米材料中的佼佼者。碳纳米管可以作为制备组织工程细胞生长支架、人工血管、药物载体等基础材料。本公开的实施例中，例如采用单壁碳纳米管(Single-Walled Carbon Nanotubes，SWCNTs)，或例如采用多壁碳纳米管(Multi-Walled Carbon Nanotubes，MWCNTs)等，碳纳米管根据其结构参数、制备工艺等可以为金属性或半导体性。碳纳米管在医学及其它领域的应用前景，非常让人期待。
例如，本实施例一示例提供的薄膜晶体管传感器中，第一栅极102和第二栅极202的材质包括金属或炭黑。第一栅极102材质为金属的情况下，例如可包括钯(Pd)、钛、钽、铬、铝、铝合金、铜、铜合金、钼、以及钼铝合金中的一种或多种，但不限于此。需要说明的是，Pd是被普遍认为的生物相容性较好的金属元素，故是较好的可作为第一栅极102和第二栅极202的材料。
例如，本实施例一示例提供的薄膜晶体管传感器，还包括设置在第一基板10和第二基板20之间的隔离件30，从而将第一栅极102和第二栅极202间隔开。例如，如图2和图5a所示，隔离件30围绕第一栅极102的边缘设置，第一基板10、第二基板20和隔离件30可构成一密闭空间222，该密闭空间内可设有空气、氮气或惰性气体。例如，如图5b所示，隔离件30可包括多个分散的子隔离件301，图5b中示出了围绕第一栅极102设置的四个子隔离件301，但不以此为限。当第一栅极102与隔离件30如图5b所示时，第一基板10、第二基板20和隔离件30之间并不构成密闭空间。即，第一基板10、第二基板20和隔离件30之间可为密闭空间也可不为密闭空间，本公开的实施例对此不作限定。需要说明的是，隔离件30不限于图中所示，第一栅极102的形状亦不限于图5a、5b中示出的形状。例如，隔离件30的材质包括聚甲基丙烯酸甲酯(PMMA)、聚酰亚胺(PI)或聚二甲基硅氧烷(PDMS)， 但不限于此。例如，隔离件30可为弹性隔离件，包括弹性隔离柱或弹性隔离球等。弹性例如是指可被拉伸和压缩。
需要说明的是，PDMS(polydimethylsiloxane，聚二甲基硅氧烷)是一种新型的高分子聚合物材料，是一种弹性、透明的胶块，安全，无毒。聚合物聚甲基丙烯酸甲酯(PMMA：poly(methyl methacrylate))是一种光刻胶聚合物材料。交联PMMA的厚度作为曝光电子束剂量的函数可以方便地调节，使得用2D电子束光刻可以得到3D PMMA的牺牲层。PMMA有优良的电荷存储能力，亦可用在器件中的电介体。PMMA聚合物薄膜柔软度如PDMS。PDMS和PMMA是较好的可作为隔离件30的材质。
例如，本实施例一示例提供的薄膜晶体管传感器中，在第一柔性衬底基板101的内侧上设置源极104、漏极105和有源层103，并且在第一栅极102与源极104、漏极105和有源层103之间设置柔性栅极绝缘层106，柔性栅极绝缘层106与隔离件30一体成形。如此设置，可以一次形成柔性栅极绝缘层106和隔离件30，节省工艺。例如，柔性栅极绝缘层106的材质可包括PMMA，但不限于此。
例如，本实施例一示例提供的薄膜晶体管传感器中，如图6a所示，在第一栅极102面向第二栅极202的一侧设置第一增厚层107，或者，如图6b所示，在第二栅极202面向第一栅极102的一侧设置第二增厚层203，也可以在第一栅极102面向第二栅极202的一侧设置第一增厚层107并且在第二栅极202面向第一栅极102的一侧设置第二增厚层203，第一增厚层107的厚度、第二增厚层203的厚度或者第一增厚层107和第二增厚层203的厚度之和小于第一栅极102与第二栅极202之间的间距。第一增厚层107和/或第二增厚层203可进一步提高薄膜晶体管传感器对于压力的感知能力。使得压力感知更容易。例如，第一增厚层107可与第一栅极102一体成形，和/或者，第二增厚层203可与第二栅极202一体成形。如此设置，可以简化制作工艺。
例如，本实施例一示例提供的薄膜晶体管传感器中，第一柔性衬底基板和第二柔性衬底基板的材质均为聚二甲基硅氧烷(PDMS)，有源层103材质为半导体性单壁碳纳米管，源极104和漏极105的材质为金属性单壁碳纳米管或Pd，第一栅极102和第二栅极202的材质均为钯(Pd)，柔性栅极绝缘层106和隔离件30一体成形，柔性栅极绝缘层106和隔离件30的材质均为 聚甲基丙烯酸甲酯(PMMA)。本示例提供的薄膜晶体管传感器采用柔性衬底基板，具有弹性的柔性栅极绝缘层，并且有源层、源极和漏极均具有弹性，可得到与人体相兼容的弹性柔性传感器(例如，可得到全弹性柔性薄膜晶体管)，并具备优良的感应效果。弹性柔性传感器可作为一种柔性动态应变传感器。适用于医疗及可穿戴设备领域，体外或植入人体内部的医疗监测及治疗使用。
例如，本实施例一示例提供的薄膜晶体管传感器中，第一柔性衬底基板和第二柔性衬底基板的厚度大于1μm，例如，可为2μm。源极104和漏极105的厚度大于50nm，有源层103的厚度小于10nm，第一栅极102和第二栅极202的厚度约为40nm-100nm，例如，可为70nm。柔性栅极绝缘层106的厚度小于100nm，隔离件30高度可为0.05mm-0.1mm。第一栅极102和第二栅极202之间的间距约为0.07mm-0.1mm。有源层位于源极和漏极之间的部分为沟道。沟道长可约为50μm-100μm。需要说明的是，上述数值只是例举，并非限定，亦可采用其他数值。
例如，本实施例一示例提供的薄膜晶体管传感器，适用测试压力范围小于0.5K Pa，但不限于此。
本实施例还提供一种薄膜晶体管传感器阵列，包括上述任一种薄膜晶体管传感器。
本实施例提供的薄膜晶体管传感器元件及其阵列，不仅有感知力，还使得弹性薄膜晶体管传感器元件接收到的压力传输到外部，外部得到信号，然后再做出反应。
本实施例提供的薄膜晶体管传感器元件及其阵列，可具备柔软以及超级敏感的特性，可以感知触控(外部压力)并传输感知到的触控(外部压力)信号，有望在人工电子皮肤，假肢、机器人、医疗安全和医疗器械等诸多方面得到进一步应用。
实施例二
与实施例一不同的是，本实施例提供的薄膜晶体管传感器不是通过围绕第一栅极的边缘设置隔离件的方式来使得薄膜晶体管传感器12处于非工作状态时彼此绝缘(受压后可导通)。而是如图7所示，在第一基板10和第二基板20之间设置压力导电材料40，从而将第一栅极102和第二栅极202间 隔开，且压力导电材料40在被施加等于或超过预定压力时导电。预定压力例如可指使得压力导电材料从绝缘状态变为导电状态的压力。压力导电材料在不受压力或所受压力不超过预定压力的情况下，处于绝缘状态，从而使得第一栅极102和第二栅极202彼此绝缘，而在受压等于或超过预定压力情况下，可处于导电状态，从而使得第一栅极102和第二栅极202之间电连接。例如，压力导电材料40可采用导电橡胶、导电塑料等。导电橡胶是将玻璃镀银、铝镀银、银等导电颗粒均匀分布在硅橡胶中，通过压力使导电颗粒接触，达到良好的导电效果。其余可参照实施例一的描述，在此不再赘述。
实施例三
本实施例提供一种薄膜晶体管传感器的制备方法，该方法可包括如下步骤：
在第一柔性衬底基板101内侧上形成第一栅极102以制备第一基板10；
在第二柔性衬底基板201内侧上形成第二栅极202以制备第二基板20；
在第一柔性衬底基板101上还形成有与第一栅极102正对的有源层103以及与有源层103电连接的源极104和漏极105；
将第一基板10和第二基板20相对设置，使得第二栅极202与第一栅极102至少部分正对且在薄膜晶体管传感器处于非工作状态时彼此绝缘。例如，可采用热压法将第一基板10和第二基板20压合。例如，第二栅极与第一栅极至少部分正对且被间隔开并被配置来在薄膜晶体管传感器受压后可使得第一栅极和第二栅极电连接，从而使得薄膜晶体管传感器导通。
例如，本实施例一示例提供的薄膜晶体管传感器的制备方法还包括形成设置在第一基板10和第二基板20之间的隔离件30，从而将第一栅极102和第二栅极202间隔开。从而可得到例如实施例一所述的薄膜晶体管传感器。
例如，本实施例一示例提供的薄膜晶体管传感器的制备方法中，在第一柔性衬底基板101的内侧上形成源极104、漏极105和有源层103，并且在第一栅极102与源极104、漏极105和有源层103之间形成柔性栅极绝缘层106，柔性栅极绝缘层106与隔离件30一体成形。
例如，本实施例一示例提供的薄膜晶体管传感器的制备方法中，在第一栅极102面向第二栅极202的一侧形成第一增厚层107，和/或者，在第二栅极202面向第一栅极102的一侧形成第二增厚层203，第一增厚层107的厚 度、第二增厚层203的厚度或者第一增厚层107和第二增厚层203的厚度之和小于第一栅极102与第二栅极202之间的间距。
例如，本实施例一示例提供的薄膜晶体管传感器的制备方法中，第一增厚层107与第一栅极102一体成形，和/或者，第二增厚层203与第二栅极202一体成形。
例如，本实施例一示例提供的薄膜晶体管传感器的制备方法包括如下步骤。
制备第一基板10。
制备第一基板10例如包括如下步骤：采用构图工艺在第一柔性衬底基板101内侧上形成第一栅极102；采用构图工艺在第一柔性衬底基板101上还形成有与第一栅极102正对的有源层103以及与有源层103电连接的源极104和漏极105。
制备第二基板20。
制备第二基板例如包括如下步骤：采用构图工艺在第二柔性衬底基板201内侧上形成第二栅极202。
将第一基板10和第二基板20相对设置，使得第二栅极202与第一栅极102至少部分正对且在薄膜晶体管传感器处于非工作状态时彼此绝缘。例如，可采用热压法将第一基板10和第二基板20压合。
例如，本实施例一示例提供的薄膜晶体管传感器的制备方法包括如下步骤。
制备第一基板。
制备第一基板例如包括如下步骤：在PDMS弹性柔性基底之上，采用溶液法工艺完成CNTs源漏电极的制作(采用金属性含量高，而且浓度较大的单壁碳纳米管溶液材料)，完成源漏电极图形化之后，采用溶液法工艺完成CNTs有源层的制作(采用半导体性含量高于99.9％的单壁碳纳米管材料)。完成CNTs有源层的图形化之后，形成PMMA薄膜，并通过掩模板曝光、显影，一体形成栅极绝缘层和隔离件。例如，一体形成栅极绝缘层和隔离件时，掩模板可采用多色调掩模板，可采用多色调掩模板对PMMA薄膜进行曝光，曝光后显影，即可获得一体的栅极绝缘层和隔离件，多色调掩模板包括灰色调或半色调掩模板。例如，可采用接近式曝光机完成栅极绝缘层和隔离件的 一体制作。形成栅极绝缘层和隔离件后，采用热蒸发法，通过掩模版进行Pd电极的制作，并且同时完成图形化，形成第一栅极，此层第一栅极不做加电压引线。溶液法工艺例如包括喷墨-打印，但不限于此。
制备第二基板。
制备第二基板例如包括如下步骤：在PDMS弹性柔性绝缘层之上，采用热蒸发法进行Pd电极的制作，并且采用光刻工艺完成图形化，形成第二栅极，第二栅极做加电压引线。
采用热压法，将第一基板和第二基板压合，形成薄膜晶体管传感器。例如，压合可在一定气氛下进行，例如，空气、氮气或惰性气体气氛。从而使得第一基板、第二基板和隔离件构成一密闭空间的情况下，密闭空间内填充有空气、氮气或惰性气体，但不限于此。
采用本公开的的实施例中的方法可制作单个的薄膜晶体管传感器，亦可制作薄膜晶体管传感器阵列，在此不作限定。形成薄膜晶体管传感器阵列时，可在每0.5mm×0.5mm的范围内设置一个薄膜晶体管传感器，但不限于此。图8a示出了薄膜晶体管传感器阵列中柔性栅极绝缘层和隔离件的剖视图，虚线部分即为一个薄膜晶体管传感器对应的柔性栅极绝缘层和隔离件的剖视图。图8b示出了一体成型的柔性栅极绝缘层和隔离件。
需要说明的是，本公开的实施例中，薄膜晶体管传感器或其阵列的制作方法不限于上述给出的方法，构图或构图工艺可只包括光刻工艺，或包括光刻工艺以及刻蚀步骤，或者可以包括打印、喷墨等其他用于形成预定图形的工艺。光刻工艺是指包括成膜、曝光、显影等工艺过程，利用光刻胶、掩模板、曝光机等形成图形。可根据本发明的实施例中所形成的结构选择相应的构图工艺。
本实施例中的薄膜晶体管传感器的各部件及其设置方式可参照实施例一的描述，在此不再赘述。
实施例四
与实施例三不同的是，本实施例提供的薄膜晶体管传感器的制备方法，不是通过围绕第一栅极的边缘设置隔离件的方式来使得薄膜晶体管传感器处于非工作状态时彼此绝缘。而是在第一基板10和第二基板20之间形成压力导电材料，从而将第一栅极102和第二栅极202间隔开，且压力导电材料在 被施加等于或超过预定压力时导电。从而可得到例如实施例二所述的薄膜晶体管传感器。有关压力导电材料可参见实施例二的描述，在此不再赘述。
需要说明的是，本公开的实施例中，以形成隔离件30或者压力导电材料40使得薄膜晶体管传感器12处于非工作状态时彼此绝缘(受压后可导通)为例进行说明。亦可采用其他方式使得薄膜晶体管传感器12处于非工作状态时彼此绝缘，本公开的实施例对此不作限定。
有以下几点需要说明：
(1)除非另作定义，本公开的实施例及其附图中的同一标号代表同一含义。
(2)本发明实施例附图中，只涉及到与本发明实施例涉及到的结构，其他结构可参考通常设计。
(3)为了清晰起见，在用于描述本发明的实施例的附图中，层或区域的厚度被放大。可以理解，当诸如层、膜、区域或基板之类的元件被称作位于另一元件“上”或“下”时，该元件可以“直接”位于另一元件“上”或“下”，或者可以存在中间元件。
(4)在不冲突的情况下，本发明不同的实施例及同一实施例中的不同特征可以相互组合。
以上所述，仅为本发明的具体实施方式，但本发明的保护范围并不局限于此，任何熟悉本技术领域的技术人员在本发明揭露的技术范围内，可轻易想到变化或替换，都应涵盖在本发明的保护范围之内。因此，本发明的保护范围应以所述权利要求的保护范围为准。
本专利申请要求于2016年2月4日递交的中国专利申请第201610079996.9号的优先权，在此全文引用上述中国专利申请公开的内容以作为本申请的一部分。

Claims (20)

  1. 一种薄膜晶体管传感器，包括彼此相对设置的第一基板和第二基板，其中，
    所述第一基板包括第一柔性衬底基板和在所述第一柔性衬底基板上的第一栅极；
    所述第二基板包括第二柔性衬底基板和在所述第二柔性衬底基板上的第二栅极；
    所述第一柔性衬底基板还包括有源层、源极和漏极；
    所述第二栅极与所述第一栅极至少部分重叠且被间隔开并被配置为在所述薄膜晶体管传感器受压后可使得所述第一栅极和所述第二栅极电连接，从而使得所述薄膜晶体管传感器导通。
  2. 根据权利要求1所述的薄膜晶体管传感器，还包括设置在所述第一基板和所述第二基板之间的隔离件，从而将所述第一栅极和所述第二栅极间隔开。
  3. 根据权利要求2所述的薄膜晶体管传感器，其中，所述隔离件围绕所述第一栅极的边缘设置。
  4. 根据权利要求3所述的薄膜晶体管传感器，其中，所述薄膜晶体管传感器未受压时，所述第一基板、所述第二基板和所述隔离件构成一密闭空间，所述密闭空间内设有空气、氮气或惰性气体。
  5. 根据权利要求3所述的薄膜晶体管传感器，其中，所述隔离件包括多个分散的子隔离件。
  6. 根据权利要求2所述的薄膜晶体管传感器，还包括增厚层，所述增厚层被配置来提高所述薄膜晶体管传感器对压力的感知能力，其中，所述增厚层设置在所述第一栅极和所述第二栅极至少之一上，并且所述薄膜晶体管传感器未受压时，所述第一栅极与所述第二栅极之间的间距大于所述增厚层的厚度。
  7. 根据权利要求6所述的薄膜晶体管传感器，其中，所述增厚层与所述第一栅极或者所述第二栅极一体成形。
  8. 根据权利要求1所述的薄膜晶体管传感器，其中，所述第一栅极和所 述第二栅极的材质包括金属或炭黑。
  9. 根据权利要求2所述的薄膜晶体管传感器，其中，在所述第一柔性衬底基板设置有所述第一栅极的一侧上设置所述源极、所述漏极和所述有源层，并且在所述第一栅极与所述源极、所述漏极和所述有源层之间设置柔性栅极绝缘层，所述柔性栅极绝缘层与所述隔离件一体成形。
  10. 根据权利要求2-9任一项所述的薄膜晶体管传感器，其中，所述隔离件的材质包括聚甲基丙烯酸甲酯(PMMA)、聚酰亚胺(PI)或聚二甲基硅氧烷(PDMS)。
  11. 根据权利要求1所述的薄膜晶体管传感器，还包括设置在所述第一基板和所述第二基板之间的压力导电材料，从而将所述第一栅极和所述第二栅极间隔开，且所述压力导电材料在被施加等于或超过预定压力时导电。
  12. 根据权利要求1-9、11任一项所述的薄膜晶体管传感器，其中，所述有源层材质包括半导体性碳纳米管或有机半导体材料。
  13. 根据权利要求1-9、11任一项所述的薄膜晶体管传感器，其中，所述源极和漏极的材质包括金属性碳纳米管或金属。
  14. 根据权利要求1-9、11任一项所述的薄膜晶体管传感器，其中，所述第一柔性衬底基板和/或第二柔性衬底基板的材质为聚二甲基硅氧烷(PDMS)、聚酰亚胺(PI)、聚萘二甲酸乙二醇酯、聚对二甲苯或聚甲基丙烯酸甲酯(PMMA)。
  15. 一种薄膜晶体管传感器的制备方法，包括：
    在第一柔性衬底基板上形成第一栅极以制备第一基板；
    在第二柔性衬底基板上形成第二栅极以制备第二基板；
    在所述第一柔性衬底基板上还形成有源层、源极和漏极；
    将所述第一基板和所述第二基板相对设置，使得所述第二栅极与所述第一栅极至少部分重叠且被间隔开并被配置为在所述薄膜晶体管传感器受压后可使得所述第一栅极和所述第二栅极电连接，从而使得所述薄膜晶体管传感器导通。
  16. 根据权利要求15所述的薄膜晶体管传感器的制备方法，还包括形成设置在所述第一基板和所述第二基板之间的隔离件，从而将所述第一栅极和所述第二栅极间隔开。
  17. 根据权利要求15所述的薄膜晶体管传感器的制备方法，还包括形成设置在所述第一基板和所述第二基板之间的压力导电材料，从而将所述第一栅极和所述第二栅极间隔开，且所述压力导电材料在被施加等于或超过预定压力时导电。
  18. 根据权利要求16所述的薄膜晶体管传感器的制备方法，在所述第一柔性衬底基板设置有所述第一栅极的一侧上形成所述源极、所述漏极和所述有源层，并且在所述第一栅极与所述源极、所述漏极和所述有源层之间形成柔性栅极绝缘层，所述柔性栅极绝缘层与所述隔离件一体成形。
  19. 根据权利要求18所述的薄膜晶体管传感器的制备方法，还包括形成增厚层，所述增厚层被配置来提高所述薄膜晶体管传感器对压力的感知能力，其中，所述增厚层形成在所述第一栅极和所述第二栅极至少之一上，并且所述薄膜晶体管传感器未受压时，所述第一栅极与所述第二栅极之间的间距大于所述增厚层的厚度。
  20. 根据权利要求19所述的薄膜晶体管传感器的制备方法，其中，所述增厚层与所述第一栅极或者所述第二栅极一体成形。
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