EP3413354A4 - Thin-film transistor sensor and method for fabrication thereof - Google Patents

Thin-film transistor sensor and method for fabrication thereof Download PDF

Info

Publication number
EP3413354A4
EP3413354A4 EP16863200.8A EP16863200A EP3413354A4 EP 3413354 A4 EP3413354 A4 EP 3413354A4 EP 16863200 A EP16863200 A EP 16863200A EP 3413354 A4 EP3413354 A4 EP 3413354A4
Authority
EP
European Patent Office
Prior art keywords
fabrication
thin
film transistor
transistor sensor
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
EP16863200.8A
Other languages
German (de)
French (fr)
Other versions
EP3413354B1 (en
EP3413354A1 (en
Inventor
Xueyan Tian
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd filed Critical BOE Technology Group Co Ltd
Publication of EP3413354A1 publication Critical patent/EP3413354A1/en
Publication of EP3413354A4 publication Critical patent/EP3413354A4/en
Application granted granted Critical
Publication of EP3413354B1 publication Critical patent/EP3413354B1/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L1/00—Measuring force or stress, in general
    • G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
    • G01L9/00—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means
    • G01L9/08—Measuring steady of quasi-steady pressure of fluid or fluent solid material by electric or magnetic pressure-sensitive elements; Transmitting or indicating the displacement of mechanical pressure-sensitive elements, used to measure the steady or quasi-steady pressure of a fluid or fluent solid material, by electric or magnetic means by making use of piezoelectric devices, i.e. electric circuits therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/481—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors
    • H10K10/482—Insulated gate field-effect transistors [IGFETs] characterised by the gate conductors the IGFET comprising multiple separately-addressable gate electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/88—Passivation; Containers; Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/60—Forming conductive regions or layers, e.g. electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00—Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10—Substrates, e.g. flexible substrates
    • H10K77/111—Flexible substrates
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Pressure Sensors (AREA)
  • Thin Film Transistor (AREA)
EP16863200.8A 2016-02-04 2016-06-16 Thin-film transistor sensor and method for fabrication thereof Active EP3413354B1 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
CN201610079996.9A CN105552132B (en) 2016-02-04 2016-02-04 Thin-film transistor sensor and preparation method thereof
PCT/CN2016/085956 WO2017133157A1 (en) 2016-02-04 2016-06-16 Thin-film transistor sensor and method for fabrication thereof

Publications (3)

Publication Number Publication Date
EP3413354A1 EP3413354A1 (en) 2018-12-12
EP3413354A4 true EP3413354A4 (en) 2019-09-18
EP3413354B1 EP3413354B1 (en) 2023-01-25

Family

ID=55831211

Family Applications (1)

Application Number Title Priority Date Filing Date
EP16863200.8A Active EP3413354B1 (en) 2016-02-04 2016-06-16 Thin-film transistor sensor and method for fabrication thereof

Country Status (4)

Country Link
US (1) US10600976B2 (en)
EP (1) EP3413354B1 (en)
CN (1) CN105552132B (en)
WO (1) WO2017133157A1 (en)

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105552132B (en) * 2016-02-04 2018-11-13 京东方科技集团股份有限公司 Thin-film transistor sensor and preparation method thereof
CN105841850B (en) * 2016-05-12 2018-02-27 京东方科技集团股份有限公司 A kind of piezoelectric transducer and preparation method thereof
CN106608612B (en) * 2016-10-13 2018-08-10 北京纳米能源与系统研究所 Active touch sensor
CN106510652A (en) * 2016-10-25 2017-03-22 中山大学 Pulse waveform and heart rate measuring method and device
CN106711229A (en) * 2016-11-17 2017-05-24 杭州潮盛科技有限公司 Inorganic film transistor, preparation method and RFID (Radio Frequency Identification Device) label
KR102343573B1 (en) * 2017-05-26 2021-12-28 삼성디스플레이 주식회사 Flexible display device
CN107462350B (en) * 2017-08-17 2020-02-18 京东方科技集团股份有限公司 Piezoelectric sensor, pressure detection device, manufacturing method and detection method
CN107478320B (en) * 2017-08-23 2019-11-05 京东方科技集团股份有限公司 Transistor sound sensing element and preparation method thereof, sonic transducer and portable equipment
CN108365095A (en) * 2017-09-30 2018-08-03 广东聚华印刷显示技术有限公司 Thin film transistor (TFT) and preparation method thereof
GB2581149B (en) * 2019-02-05 2021-11-10 Pragmatic Printing Ltd Flexible interposer
CN111337168A (en) * 2020-04-15 2020-06-26 温州大学苍南研究院 Graphite-based piezoresistive flexible pressure sensor and manufacturing method thereof
CN111811700B (en) * 2020-06-11 2021-07-23 上海交通大学 Pressure sensor, pressure sensing device and preparation method thereof
CN111883556B (en) * 2020-07-13 2022-11-25 浙江清华柔性电子技术研究院 Flexible touch sensor and preparation method thereof
US12055449B2 (en) * 2020-08-28 2024-08-06 Board Of Trustees Of Michigan State University Flexible sensor
CN112442246A (en) * 2020-11-16 2021-03-05 柔微智能科技(苏州)有限公司 Preparation method of flexible pressure sensing film, tumble alarm flexible floor and preparation method
CN113008124B (en) * 2021-02-20 2023-10-17 宁波诺丁汉新材料研究院有限公司 Multimode sensor and preparation method thereof
CN113363329A (en) * 2021-06-04 2021-09-07 华南理工大学 Thin film transistor and preparation method thereof
CN113884226B (en) * 2021-09-28 2023-03-24 上海交通大学 Pressure sensor, pressure sensing array and preparation method thereof
CN114035710B (en) * 2021-10-22 2024-04-12 上海交通大学 External trigger touch sensing array and preparation method thereof
CN115172490A (en) * 2022-06-30 2022-10-11 上海天马微电子有限公司 Transistor and photoelectric sensor
CN116546873B (en) * 2023-07-06 2023-09-19 之江实验室 Composite thin film transistor pressure sensor and manufacturing method thereof

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101625617A (en) * 2008-07-09 2010-01-13 清华大学 Touch screen and display device

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3635462A1 (en) * 1985-10-21 1987-04-23 Sharp Kk FIELD EFFECT PRESSURE SENSOR
EP1737054B1 (en) 1999-01-29 2012-04-11 Seiko Epson Corporation Piezoelectric transducer
US20020145188A1 (en) * 1999-09-07 2002-10-10 Hironori Kodama Flat semiconductor device and power converter employing the same
JP4744849B2 (en) * 2004-11-11 2011-08-10 株式会社東芝 Semiconductor device
JP5138274B2 (en) * 2007-05-25 2013-02-06 三菱電機株式会社 Semiconductor device
US8165087B2 (en) * 2007-06-30 2012-04-24 Microsoft Corporation Location context service handoff
JP5200443B2 (en) * 2007-07-30 2013-06-05 セイコーエプソン株式会社 Organic transistor and active matrix substrate
US8390580B2 (en) 2008-07-09 2013-03-05 Tsinghua University Touch panel, liquid crystal display screen using the same, and methods for making the touch panel and the liquid crystal display screen
CN101685212B (en) 2008-09-26 2012-08-29 群康科技(深圳)有限公司 Liquid crystal display panel
TWI420086B (en) * 2008-10-15 2013-12-21 Ind Tech Res Inst Flexible electronics pressure sensing apparatus and manufacturing method thereof
US20110235156A1 (en) * 2010-03-26 2011-09-29 Qualcomm Mems Technologies, Inc. Methods and devices for pressure detection
CN101894855B (en) * 2010-06-18 2013-01-16 华南理工大学 Flexible integrated ultrasonic transducer and preparation method thereof
TWI450151B (en) * 2012-01-06 2014-08-21 Wintek China Technology Ltd Touch-sensing display apparatus
CN103941495B (en) * 2013-01-25 2017-10-10 上海天马微电子有限公司 Touch display panel and touch display device
KR102087951B1 (en) * 2013-07-25 2020-04-16 삼성디스플레이 주식회사 Flat panel display and method for manufacturing the same
CN104808845B (en) * 2015-04-03 2019-08-09 深超光电（深圳）有限公司 Touch control display apparatus
CN105552132B (en) * 2016-02-04 2018-11-13 京东方科技集团股份有限公司 Thin-film transistor sensor and preparation method thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101625617A (en) * 2008-07-09 2010-01-13 清华大学 Touch screen and display device
JP2011028785A (en) * 2008-07-09 2011-02-10 Qinghua Univ Touch panel and display device

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
DANIEL ELKINGTON ET AL: "Organic Thin-Film Transistor (OTFT)-Based Sensors", ELECTRONICS, vol. 3, no. 4, 8 April 2014 (2014-04-08), pages 234 - 254, XP055450228, DOI: 10.3390/electronics3020234 *
MONIA DEMELAS ET AL: "Charge sensing by organic charge-modulated field effect transistors: application to the detection of bio-related effects", JOURNAL OF MATERIALS CHEMISTRY B, vol. 1, no. 31, 1 January 2013 (2013-01-01), GB, pages 3811, XP055222324, ISSN: 2050-750X, DOI: 10.1039/c3tb20237b *

Also Published As

Publication number Publication date
EP3413354B1 (en) 2023-01-25
CN105552132B (en) 2018-11-13
US20180114931A1 (en) 2018-04-26
WO2017133157A1 (en) 2017-08-10
EP3413354A1 (en) 2018-12-12
US10600976B2 (en) 2020-03-24
CN105552132A (en) 2016-05-04

Similar Documents

Publication Publication Date Title
EP3413354A4 (en) Thin-film transistor sensor and method for fabrication thereof
EP3508992A4 (en) Error correction method and device for search term
EP3531454A4 (en) Oled display device and method for manufacturing same
EP3534407A4 (en) Field effect transistor and manufacturing method therefor
EP3314362A4 (en) Sensor device and method
EP3476920A4 (en) Device for manufacturing organic substance and method for manufacturing organic substance
EP3101638A4 (en) Sensor node and method for controlling sensor node
EP3116031A4 (en) Organic thin film transistor and method for manufacturing same
EP3091587A4 (en) Organic electronic device and fabrication method therefor
EP3400615A4 (en) Multi-well selenium device and method for fabrication thereof
EP3476179A4 (en) Method and device for determining cluster-heads
EP3564935A4 (en) K value sensing method for oled driving thin film transistor
EP3116030A4 (en) Organic thin film transistor and method for manufacturing same
EP3139154A4 (en) Spectroscopy sensor and method for manufacturing same
EP3395376A4 (en) Device and production method for same
TWI560508B (en) Thin film transistor and operating method thereof
EP3410492A4 (en) Field effect transistor and manufacturing method therefor
EP3185306A4 (en) Thin film transistor device, display and method for fabricating same
EP3466330A4 (en) Bio-implantable device and method for manufacturing same
EP3214655A4 (en) Thin-film transistor and method for producing same
EP3217445A4 (en) Sensor device and method for manufacturing same
EP3671661A4 (en) Gate device and method for gate device
EP3118891A4 (en) Composition and organic thin-film transistor using same
EP3116033A4 (en) Thin-film transistor
EP3193374A4 (en) Complementary tunneling field effect transistor and manufacturing method therefor

Legal Events

Date Code Title Description
STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: UNKNOWN

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE INTERNATIONAL PUBLICATION HAS BEEN MADE

PUAI Public reference made under article 153(3) epc to a published international application that has entered the european phase

Free format text: ORIGINAL CODE: 0009012

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

17P Request for examination filed

Effective date: 20170517

AK Designated contracting states

Kind code of ref document: A1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

AX Request for extension of the european patent

Extension state: BA ME

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: REQUEST FOR EXAMINATION WAS MADE

DAV Request for validation of the european patent (deleted)
DAX Request for extension of the european patent (deleted)
A4 Supplementary search report drawn up and despatched

Effective date: 20190816

RIC1 Information provided on ipc code assigned before grant

Ipc: H01L 21/336 20060101ALI20190809BHEP

Ipc: H01L 29/786 20060101AFI20190809BHEP

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

17Q First examination report despatched

Effective date: 20210225

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: EXAMINATION IS IN PROGRESS

REG Reference to a national code

Ref country code: DE

Ref legal event code: R079

Ref document number: 602016077652

Country of ref document: DE

Free format text: PREVIOUS MAIN CLASS: H01L0029786000

Ipc: G01L0001180000

GRAP Despatch of communication of intention to grant a patent

Free format text: ORIGINAL CODE: EPIDOSNIGR1

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: GRANT OF PATENT IS INTENDED

RIC1 Information provided on ipc code assigned before grant

Ipc: G01L 1/18 20060101AFI20220913BHEP

INTG Intention to grant announced

Effective date: 20221004

GRAS Grant fee paid

Free format text: ORIGINAL CODE: EPIDOSNIGR3

GRAA (expected) grant

Free format text: ORIGINAL CODE: 0009210

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: THE PATENT HAS BEEN GRANTED

AK Designated contracting states

Kind code of ref document: B1

Designated state(s): AL AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HR HU IE IS IT LI LT LU LV MC MK MT NL NO PL PT RO RS SE SI SK SM TR

REG Reference to a national code

Ref country code: GB

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: CH

Ref legal event code: EP

REG Reference to a national code

Ref country code: AT

Ref legal event code: REF

Ref document number: 1546205

Country of ref document: AT

Kind code of ref document: T

Effective date: 20230215

Ref country code: IE

Ref legal event code: FG4D

REG Reference to a national code

Ref country code: DE

Ref legal event code: R096

Ref document number: 602016077652

Country of ref document: DE

REG Reference to a national code

Ref country code: LT

Ref legal event code: MG9D

REG Reference to a national code

Ref country code: NL

Ref legal event code: MP

Effective date: 20230125

REG Reference to a national code

Ref country code: AT

Ref legal event code: MK05

Ref document number: 1546205

Country of ref document: AT

Kind code of ref document: T

Effective date: 20230125

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: NL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: RS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

Ref country code: PT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230525

Ref country code: NO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230425

Ref country code: LV

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

Ref country code: LT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

Ref country code: HR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

Ref country code: ES

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

Ref country code: AT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

Ref country code: PL

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

Ref country code: IS

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230525

Ref country code: GR

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230426

Ref country code: FI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

REG Reference to a national code

Ref country code: DE

Ref legal event code: R097

Ref document number: 602016077652

Country of ref document: DE

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SM

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

Ref country code: RO

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

Ref country code: EE

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

Ref country code: DK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

Ref country code: CZ

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SK

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

PLBE No opposition filed within time limit

Free format text: ORIGINAL CODE: 0009261

STAA Information on the status of an ep patent application or granted ep patent

Free format text: STATUS: NO OPPOSITION FILED WITHIN TIME LIMIT

26N No opposition filed

Effective date: 20231026

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: SI

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

Ref country code: MC

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

REG Reference to a national code

Ref country code: CH

Ref legal event code: PL

REG Reference to a national code

Ref country code: BE

Ref legal event code: MM

Effective date: 20230630

GBPC Gb: european patent ceased through non-payment of renewal fee

Effective date: 20230616

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230616

REG Reference to a national code

Ref country code: IE

Ref legal event code: MM4A

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: LU

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230616

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230616

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230616

Ref country code: GB

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230616

Ref country code: CH

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230630

PG25 Lapsed in a contracting state [announced via postgrant information from national office to epo]

Ref country code: IT

Free format text: LAPSE BECAUSE OF FAILURE TO SUBMIT A TRANSLATION OF THE DESCRIPTION OR TO PAY THE FEE WITHIN THE PRESCRIBED TIME-LIMIT

Effective date: 20230125

Ref country code: FR

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230630

Ref country code: BE

Free format text: LAPSE BECAUSE OF NON-PAYMENT OF DUE FEES

Effective date: 20230630

PGFP Annual fee paid to national office [announced via postgrant information from national office to epo]

Ref country code: DE

Payment date: 20240617

Year of fee payment: 9