CN106510652A - Pulse waveform and heart rate measuring method and device - Google Patents
Pulse waveform and heart rate measuring method and device Download PDFInfo
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- CN106510652A CN106510652A CN201610938212.3A CN201610938212A CN106510652A CN 106510652 A CN106510652 A CN 106510652A CN 201610938212 A CN201610938212 A CN 201610938212A CN 106510652 A CN106510652 A CN 106510652A
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- 238000000034 method Methods 0.000 title claims abstract description 36
- 239000010409 thin film Substances 0.000 claims abstract description 104
- 238000005259 measurement Methods 0.000 claims abstract description 22
- 230000000694 effects Effects 0.000 claims abstract description 18
- 210000001367 artery Anatomy 0.000 claims abstract description 5
- 239000012528 membrane Substances 0.000 claims description 30
- 230000010355 oscillation Effects 0.000 claims description 21
- 239000012780 transparent material Substances 0.000 claims description 12
- 238000009825 accumulation Methods 0.000 claims description 11
- 230000003321 amplification Effects 0.000 claims description 11
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 11
- 230000008859 change Effects 0.000 claims description 5
- 239000003990 capacitor Substances 0.000 claims description 4
- 230000009467 reduction Effects 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims description 3
- 230000010354 integration Effects 0.000 claims description 2
- 230000035945 sensitivity Effects 0.000 claims 2
- 230000008569 process Effects 0.000 description 6
- 238000005286 illumination Methods 0.000 description 5
- 239000013078 crystal Substances 0.000 description 4
- 239000010408 film Substances 0.000 description 4
- 238000001514 detection method Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009532 heart rate measurement Methods 0.000 description 2
- 230000004872 arterial blood pressure Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000036541 health Effects 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 210000000707 wrist Anatomy 0.000 description 1
Classifications
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/02—Detecting, measuring or recording pulse, heart rate, blood pressure or blood flow; Combined pulse/heart-rate/blood pressure determination; Evaluating a cardiovascular condition not otherwise provided for, e.g. using combinations of techniques provided for in this group with electrocardiography or electroauscultation; Heart catheters for measuring blood pressure
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/02—Detecting, measuring or recording pulse, heart rate, blood pressure or blood flow; Combined pulse/heart-rate/blood pressure determination; Evaluating a cardiovascular condition not otherwise provided for, e.g. using combinations of techniques provided for in this group with electrocardiography or electroauscultation; Heart catheters for measuring blood pressure
- A61B5/024—Detecting, measuring or recording pulse rate or heart rate
- A61B5/02438—Detecting, measuring or recording pulse rate or heart rate with portable devices, e.g. worn by the patient
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/68—Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient
- A61B5/6801—Arrangements of detecting, measuring or recording means, e.g. sensors, in relation to patient specially adapted to be attached to or worn on the body surface
- A61B5/6802—Sensor mounted on worn items
- A61B5/681—Wristwatch-type devices
-
- A—HUMAN NECESSITIES
- A61—MEDICAL OR VETERINARY SCIENCE; HYGIENE
- A61B—DIAGNOSIS; SURGERY; IDENTIFICATION
- A61B5/00—Measuring for diagnostic purposes; Identification of persons
- A61B5/72—Signal processing specially adapted for physiological signals or for diagnostic purposes
- A61B5/7225—Details of analog processing, e.g. isolation amplifier, gain or sensitivity adjustment, filtering, baseline or drift compensation
Landscapes
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Medical Informatics (AREA)
- Surgery (AREA)
- Biophysics (AREA)
- Pathology (AREA)
- Veterinary Medicine (AREA)
- Biomedical Technology (AREA)
- Heart & Thoracic Surgery (AREA)
- Public Health (AREA)
- Molecular Biology (AREA)
- Physics & Mathematics (AREA)
- Animal Behavior & Ethology (AREA)
- General Health & Medical Sciences (AREA)
- Cardiology (AREA)
- Physiology (AREA)
- Signal Processing (AREA)
- Power Engineering (AREA)
- Artificial Intelligence (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Psychiatry (AREA)
- Measuring Pulse, Heart Rate, Blood Pressure Or Blood Flow (AREA)
Abstract
The invention relates to a pulse waveform and heart rate measuring method. A piezoelectric thin film transistor is used for conducting pulse waveform and heart rate measuring and comprises a piezoelectric sensor and a thin film transistor body. In the measuring method, the piezoelectric sensor is used for detecting pressure fluctuation caused by the artery, and when the piezoelectric sensor detects pressure fluctuation, a bottom electrode of the piezoelectric sensor can generate and gather positive charges or negative charges due to the piezoelectric effect, wherein firstly, when the positive charges are gathered at the bottom electrode, the gathered positive charges play an opening role on the bottom thin film transistor body, and accordingly the output current of a thin film transistor source electrode is increased; and secondly, when the negative charges are gathered at the bottom electrode, the gathered negative charges play a closing role on the bottom thin film transistor body, and the output current of the thin film transistor source electrode is reduced. According to the measuring method, the pulse waveform and the heart rate can be restored through measurement on the changes of the output current of the thin film transistor source electrode.
Description
Technical field
The present invention relates to piezoelectric membrane field of transistors, more particularly, to a kind of pulse wave and method for measuring heart rate
And device.
Background technology
Current wearable device mainly realizes the measurement of pulse or heart rate using volumetric method and photoelectric sensor.So
And, in some cases, in addition it is also necessary to which the shape of pulse wave is measured to obtaining more fully health situation, tradition
Feeling the pulse for the traditional Chinese medical science is exactly that doctor judges the state of an illness of patient using the situation of change of the upper arterial pressure of patients wrist.But, it is existing
Also there are not corresponding method or apparatus in technology.
The content of the invention
A difficult problem of the present invention for solution above prior art, there is provided a kind of pulse wave and method for measuring heart rate, the party
Method can realize the measurement to pulse wave.
To realize above goal of the invention, the technical scheme of employing is：
A kind of pulse wave and method for measuring heart rate, carry out the measurement of pulse wave and heart rate using piezoelectric membrane transistor；
The piezoelectric membrane transistor includes piezoelectric transducer and thin film transistor (TFT)；The measuring method is utilized and is integrated in thin film transistor (TFT)
Piezoelectric transducer on top surface is detected to the pressure oscillation that artery causes, when piezoelectric transducer detects pressure oscillation,
Its bottom electrode can be produced by piezo-electric effect, accumulate positive charge or negative electrical charge：
（1）When bottom electrode accumulates positive charge, the effect opened to the thin film transistor (TFT) of bottom by the positive charge of accumulation,
So as to cause the increase of thin film transistor (TFT) source electrode output current；
（2）When bottom electrode accumulates negative electrical charge, the effect closed to the thin film transistor (TFT) of bottom by the negative electrical charge of accumulation,
So as to cause the reduction of thin film transistor (TFT) source electrode output current；
Change of the measuring method by measurement thin film transistor (TFT) source electrode output current, you can restore pulse wave and heart rate.
In the case where being embodied as, the size of the pressure oscillation that piezoelectric transducer is detected is gathered with its bottom electrode
The quantity of positive charge or negative electrical charge is correlation, and the quantity of the positive charge or negative electrical charge of the accumulation of its bottom electrode with
The size of thin film transistor (TFT) source electrode output current is also correlation.Therefore, piezoelectric membrane transistor can pass through source
Reflecting the size of the pressure oscillation for detecting exactly, in the case where detection is carried out continuously, which detects pole output current
Pressure oscillation can form a pulse wave curve and heart rate curve.Therefore method provided by the present invention can be realized right
The measurement of pulse wave and heart rate.
Preferably, the piezoelectric transducer includes piezoelectric thin film layer and fits respectively or directly prepare on piezoelectric thin film layer top
Face, the common ground electrode of bottom surface and top-gated pole, the top-gated pole is fitted with the top surface of thin film transistor (TFT) its bottom surface as bottom electrode
Or directly prepare.
Preferably, the piezoelectric thin film layer, common ground electrode and top-gated pole are made using transparent material, the thin film transistor (TFT)
Using photosensitive three dimensional thin film transistor.Piezoelectric thin film layer, altogether ground electrode and top-gated pole are made using transparent material so that
Light can be transmitted in three dimensional thin film transistor, and photosensitive three dimensional thin film transistor illumination effect under, its internal resistance
Can reduce, be subject under equal pressure oscillation in piezoelectric membrane transistor, thin film transistor (TFT) source electrode output current will increase, favorably
In follow-up signal transacting.
Meanwhile, present invention also offers a kind of device of application above method, the device is for pulse wave and heart rate
Measure, which specifically includes：Piezoelectric membrane transistor and a signal amplification circuit, the piezoelectric membrane transistor include piezoelectricity
Sensor and thin film transistor (TFT)；The source electrode of the thin film transistor (TFT) is connected with the input of signal amplification circuit.
Wherein, the piezoelectric membrane transistor is for measuring to pulse wave and heart rate according to above method and defeated
Go out specific signal, the signal amplification circuit is amplified for the signal to exporting.
Preferably, the piezoelectric transducer includes piezoelectric thin film layer and fits respectively or directly prepare on piezoelectric thin film layer top
Face, the common ground electrode of bottom surface and top-gated pole, the top-gated pole is fitted with the top surface of thin film transistor (TFT) its bottom surface as bottom electrode
Or directly prepare.
Preferably, the piezoelectric thin film layer, common ground electrode and top-gated pole are made using transparent material, the thin film transistor (TFT)
Using photosensitive three dimensional thin film transistor.Piezoelectric thin film layer, altogether ground electrode and top-gated pole are made using transparent material so that
Light can be transmitted in three dimensional thin film transistor, and photosensitive three dimensional thin film transistor illumination effect under, its internal resistance
Can reduce, be subject under equal pressure oscillation in piezoelectric membrane transistor, thin film transistor (TFT) source electrode output current will increase, favorably
In follow-up signal transacting.
Preferably, the signal amplification circuit includes operational amplifier and integrating capacitor, the wherein positive of operational amplifier
Input end grounding, the inverting input of the operational amplifier are connected with the source electrode of thin film transistor (TFT), the operational amplifier
Output end is connected with the inverting input of operational amplifier by integrating capacitor.
Preferably, the inverting input of the operational amplifier is connected with top-gated pole.
Preferably, the bottom-gate of the thin film transistor (TFT), drain electrode is connected with the top-gated pole of piezoelectric transducer.
Compared with prior art, the invention has the beneficial effects as follows：
（1）Exactly pulse wave and heart rate can be measured.
（2）The method or device can realize energy consistent, without the need for its supplying energy of outer bound pair.
Description of the drawings
Structural representations of the Fig. 1 for piezoelectric membrane transistor.
Structural representations of the Fig. 2 for the preferred version one of device.
Structural representations of the Fig. 3 for the preferred version two of device.
Fig. 4 is that piezoelectric transducer adopts photosensitive three dimensional thin film transistor using transparent material, thin film transistor (TFT)
The structural representation of piezoelectric membrane transistor.
Fig. 5 is the result schematic diagram that heart rate measurement is carried out using piezoelectric membrane transistor described in Fig. 1.
Fig. 6 is the result schematic diagram that heart rate measurement is carried out using piezoelectric membrane transistor described in Fig. 4.
Specific embodiment
Accompanying drawing being for illustration only property explanation, it is impossible to be interpreted as the restriction to this patent；
Below in conjunction with drawings and Examples, the present invention is further elaborated.
Embodiment 1
As shown in figure 1, piezoelectric membrane transistor involved in the present invention includes piezoelectric transducer and thin film transistor (TFT), wherein described
Piezoelectric transducer include piezoelectric thin film layer and respectively laminating or directly prepare common ground electrode in piezoelectric thin film layer top surface, bottom surface with
Top-gated pole, the top-gated pole are fitted with the top surface of thin film transistor (TFT) as its bottom surface of bottom electrode or are directly prepared.
On the basis of more than, the device of measurement pulse wave involved in the present invention and heart rate includes：Piezoelectric membrane crystal
Pipe and a signal amplification circuit, the piezoelectric membrane transistor include piezoelectric transducer and thin film transistor (TFT)；The film crystal
The source electrode of pipe is connected with the input of signal amplification circuit.
The device that the present invention is provided is as follows to the concrete principle that pulse wave and heart rate are measured：
Piezoelectric transducer for detecting to the pressure oscillation that artery causes, when piezoelectric transducer detects pressure oscillation,
Its common ground electrode and bottom electrode can be produced by piezo-electric effect, accumulate positive charge or negative electrical charge：
（1）When bottom electrode accumulates positive charge, the effect opened to the thin film transistor (TFT) of bottom by the positive charge of accumulation,
So as to cause the increase of thin film transistor (TFT) source electrode output current；
（2）When bottom electrode accumulates negative electrical charge, the effect closed to the thin film transistor (TFT) of bottom by the negative electrical charge of accumulation,
So as to cause the reduction of thin film transistor (TFT) source electrode output current；
Change of the device provided by the present invention by measurement thin film transistor (TFT) source electrode output current, you can restore pulse wave
And heart rate.Wherein described signal amplification circuit is amplified for the electric current to exporting.
In the case where being embodied as, the size of the pressure oscillation that piezoelectric transducer is detected is gathered with its bottom electrode
The quantity of positive charge or negative electrical charge is correlation, and the quantity of the positive charge or negative electrical charge of the accumulation of its bottom electrode with
The size of thin film transistor (TFT) source electrode output current is also correlation.Therefore, piezoelectric membrane transistor can pass through source
Reflecting the size of the pressure oscillation for detecting exactly, in the case where detection is carried out continuously, which detects pole output current
Pressure oscillation can form a pulse wave curve and heart rate curve.Therefore method provided by the present invention can be realized right
The measurement of pulse wave and heart rate.
In specific implementation process, as shown in figure 4, the piezoelectric thin film layer, altogether ground electrode and top-gated pole are using transparent
Material is made, and the thin film transistor (TFT) adopts photosensitive three dimensional thin film transistor.Piezoelectric thin film layer, altogether ground electrode and top-gated
Made using transparent material pole so that light can be transmitted in three dimensional thin film transistor, and photosensitive three-dimension film crystal
Under illumination effect, its internal resistance can be reduced pipe, be subject under equal pressure oscillation in piezoelectric membrane transistor, thin film transistor (TFT)
Source electrode output current will increase, and be conducive to follow-up signal transacting.
In specific implementation process, as shown in Figure 2,3, the signal amplification circuit includes operational amplifier and integration electricity
Appearance, the wherein positive input end grounding of operational amplifier, the inverting input of the operational amplifier and the source of thin film transistor (TFT)
Pole connects, and the output end of the operational amplifier is connected with the inverting input of operational amplifier by integrating capacitor.Wherein, such as
Fig. 2, shown in 3, the top-gated pole can be equivalent to pressure generating set and an internal capacitance and carry out parallel connection.
In specific implementation process, as shown in Figure 2,3, the inverting input of the operational amplifier is connected with top-gated pole
Connect.
In specific implementation process, as shown in figure 3, the bottom-gate of the thin film transistor (TFT), drain electrode and piezoelectric transducer
Top-gated pole connection.
Embodiment 2
The present invention is on the basis of embodiment 1, there is provided a kind of pulse wave and method for measuring heart rate, and the method is thin using piezoelectricity
Film transistor is carrying out the measurement of pulse wave and heart rate；As shown in figure 1, the piezoelectric membrane transistor includes piezoelectric transducer
And thin film transistor (TFT)；The pressure that the measuring method is caused to artery using the piezoelectric transducer being integrated on thin film transistor (TFT) top surface
Fluctuation is detected, when piezoelectric transducer detects pressure oscillation, its bottom electrode can be produced by piezo-electric effect, be gathered
There are positive charge or negative electrical charge：
（1）When bottom electrode accumulates positive charge, the effect opened to the thin film transistor (TFT) of bottom by the positive charge of accumulation,
So as to cause the increase of thin film transistor (TFT) source electrode output current；
（2）When bottom electrode accumulates negative electrical charge, the effect closed to the thin film transistor (TFT) of bottom by the negative electrical charge of accumulation,
So as to cause the reduction of thin film transistor (TFT) source electrode output current；
Change of the measuring method by measurement thin film transistor (TFT) source electrode output current, you can restore pulse wave and heart rate.
In the case where being embodied as, the size of the pressure oscillation that piezoelectric transducer is detected is gathered with its bottom electrode
The quantity of positive charge or negative electrical charge is correlation, and the quantity of the positive charge or negative electrical charge of the accumulation of its bottom electrode with
The size of thin film transistor (TFT) source electrode output current is also correlation.Therefore, piezoelectric membrane transistor can pass through source
Reflecting the size of the pressure oscillation for detecting exactly, in the case where detection is carried out continuously, which detects pole output current
Pressure oscillation can form a pulse wave curve and heart rate curve.Therefore method provided by the present invention can be realized right
The measurement of pulse wave and heart rate.
In specific implementation process, as shown in figure 1, the piezoelectric transducer include piezoelectric thin film layer and respectively laminating or
Directly prepare in piezoelectric thin film layer top surface, the common ground electrode of bottom surface and top-gated pole, the top-gated pole is used as its bottom surface of bottom electrode
Fit with the top surface of thin film transistor (TFT) or directly prepare.
In specific implementation process, as shown in figure 4, the piezoelectric thin film layer, altogether ground electrode and top-gated pole are using transparent
Material is made, and the thin film transistor (TFT) adopts photosensitive three dimensional thin film transistor.Piezoelectric thin film layer, altogether ground electrode and top-gated
Made using transparent material pole so that light can be transmitted in three dimensional thin film transistor, and photosensitive three-dimension film crystal
Under illumination effect, its internal resistance can be reduced pipe, be subject under equal pressure oscillation in piezoelectric membrane transistor, thin film transistor (TFT)
Source electrode output current will increase, and be conducive to follow-up signal transacting.
Embodiment 3
The present embodiment has carried out the measurement of heart rate twice and pulse wave using the method for the device or embodiment 2 of embodiment 1.Its
The result of middle one-shot measurement in this measurement, is adopted as shown in figure 5, the measured pulse for obtaining or heart rate are 90/ minute
Piezoelectric membrane transistor is the piezoelectric membrane transistor shown in Fig. 1.The result of one-shot measurement is as shown in fig. 6, this measurement in addition
In, piezoelectric membrane transistor of the piezoelectric membrane transistor for being adopted shown in Fig. 4.Knowable to the measurement result of contrast Fig. 5, Fig. 6,
The output signal of Fig. 6 is increased, and this is made of due to piezoelectric thin film layer, is total to ground electrode and top-gated pole using transparent material,
Light is transmitted in three dimensional thin film transistor, and photosensitive three dimensional thin film transistor illumination effect under, in which
The reason that resistance is reduced.This causes piezoelectric membrane transistor to be subject under equal pressure oscillation, thin film transistor (TFT) source electrode output electricity
Stream will increase.
Obviously, the above embodiment of the present invention is only intended to clearly illustrate example of the present invention, and is not right
The restriction of embodiments of the present invention.For those of ordinary skill in the field, may be used also on the basis of the above description
To make other changes in different forms.There is no need to be exhaustive to all of embodiment.It is all this
Any modification, equivalent and improvement made within the spirit and principle of invention etc., should be included in the claims in the present invention
Protection domain within.
Claims (9)
1. a kind of pulse wave and method for measuring heart rate, it is characterised in that：Pulse wave is carried out using piezoelectric membrane transistor
With the measurement of heart rate；The piezoelectric membrane transistor includes piezoelectric transducer and thin film transistor (TFT)；The measuring method is using collection
The pressure oscillation that artery causes is detected into the piezoelectric transducer on thin film transistor (TFT) top surface, when piezoelectric transducer is detected
When pressure oscillation, its bottom electrode can be produced by piezo-electric effect, accumulate positive charge or negative electrical charge：
（1）When bottom electrode accumulates positive charge, the effect opened to the thin film transistor (TFT) of bottom by the positive charge of accumulation,
So as to cause the increase of thin film transistor (TFT) source electrode output current；
（2）When bottom electrode accumulates negative electrical charge, the effect closed to the thin film transistor (TFT) of bottom by the negative electrical charge of accumulation,
So as to cause the reduction of thin film transistor (TFT) source electrode output current；
Change of the measuring method by measurement thin film transistor (TFT) source electrode output current, you can restore pulse wave and the heart
Rate.
2. pulse wave according to claim 1 and method for measuring heart rate, it is characterised in that：The piezoelectric transducer includes
Piezoelectric thin film layer and respectively laminating are directly prepared on piezoelectric thin film layer top surface, the common ground electrode of bottom surface and top-gated pole, the top
Grid is fitted with the top surface of thin film transistor (TFT) as its bottom surface of bottom electrode or is directly prepared.
3. pulse wave according to claim 2 and method for measuring heart rate, it is characterised in that：The piezoelectric thin film layer, altogether
Ground electrode and top-gated pole are made using transparent material, and the thin film transistor (TFT) adopts photosensitive three dimensional thin film transistor to carry
The sensitivity of high measurement.
4. device of the one kind according to claim 1 ~ 3 any one methods described, for measuring to pulse wave and heart rate, its
It is characterised by：Including a piezoelectric membrane transistor and a signal amplification circuit, the piezoelectric membrane transistor includes piezoelectric sensing
Device and thin film transistor (TFT)；The source electrode of the thin film transistor (TFT) is connected with the input of signal amplification circuit.
5. device according to claim 4, it is characterised in that：The piezoelectric transducer includes piezoelectric thin film layer and pastes respectively
Close or directly preparation in piezoelectric thin film layer top surface, the common ground electrode of bottom surface and top-gated pole, the top-gated pole as bottom electrode its
Fit with the top surface of thin film transistor (TFT) or directly prepare in bottom surface.
6. device according to claim 5, it is characterised in that：The piezoelectric thin film layer, altogether ground electrode and top-gated pole adopt
Transparent material is made, and the thin film transistor (TFT) adopts photosensitive three dimensional thin film transistor to improve the sensitivity of measurement.
7. device according to claim 5, it is characterised in that：The signal amplification circuit includes operational amplifier and integration
The positive input end grounding of electric capacity, wherein operational amplifier, inverting input and the thin film transistor (TFT) of the operational amplifier
Source electrode connects, and the output end of the operational amplifier is connected with the inverting input of operational amplifier by integrating capacitor.
8. device according to claim 7, it is characterised in that：The inverting input of the operational amplifier is connected with top-gated pole
Connect.
9. device according to claim 8, it is characterised in that：The bottom-gate of the thin film transistor (TFT), drain electrode are passed with piezoelectricity
The top-gated pole connection of sensor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610938212.3A CN106510652A (en) | 2016-10-25 | 2016-10-25 | Pulse waveform and heart rate measuring method and device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610938212.3A CN106510652A (en) | 2016-10-25 | 2016-10-25 | Pulse waveform and heart rate measuring method and device |
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| CN106510652A true CN106510652A (en) | 2017-03-22 |
Family
ID=58291935
Family Applications (1)
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| CN201610938212.3A Pending CN106510652A (en) | 2016-10-25 | 2016-10-25 | Pulse waveform and heart rate measuring method and device |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106950000A (en) * | 2017-03-29 | 2017-07-14 | 深圳大学 | A kind of Pulse pressure sensor, chip, device, system and preparation method thereof |
| CN107300392A (en) * | 2017-07-12 | 2017-10-27 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | A kind of Multifunction Sensor based on double gate thin-film transistor and preparation method thereof |
| CN110742592A (en) * | 2019-10-08 | 2020-02-04 | 郑州轻工业学院 | Human health detection method based on flexible piezoelectric electret pulse sensor |
Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2292519Y (en) * | 1996-12-25 | 1998-09-30 | 中国科学院长春应用化学研究所 | Direct pressure pulsing sensor |
| CN101894855A (en) * | 2010-06-18 | 2010-11-24 | 华南理工大学 | Flexible integrated ultrasonic transducer and preparation method thereof |
| CN103383404A (en) * | 2013-07-04 | 2013-11-06 | 清华大学 | Current measuring circuit |
| CN104578362A (en) * | 2015-01-21 | 2015-04-29 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Vibration energy collection device |
| CN104613861A (en) * | 2015-02-02 | 2015-05-13 | 上海集成电路研发中心有限公司 | Flexible active strain or pressure sensor structure and preparation method |
| CN105070823A (en) * | 2015-08-03 | 2015-11-18 | 复旦大学 | Pressure sensor and manufacturing method thereof |
| CN105203019A (en) * | 2015-10-19 | 2015-12-30 | 上海集成电路研发中心有限公司 | Flexible active pressure/strain sensor structure and manufacturing method thereof |
| CN105433905A (en) * | 2015-12-03 | 2016-03-30 | 杨松 | Wearing equipment for collecting human body vibration signals and method for collecting human body physiological signals |
| CN105552132A (en) * | 2016-02-04 | 2016-05-04 | 京东方科技集团股份有限公司 | Thin film transistor sensor and fabrication method thereof |
-
2016
- 2016-10-25 CN CN201610938212.3A patent/CN106510652A/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2292519Y (en) * | 1996-12-25 | 1998-09-30 | 中国科学院长春应用化学研究所 | Direct pressure pulsing sensor |
| CN101894855A (en) * | 2010-06-18 | 2010-11-24 | 华南理工大学 | Flexible integrated ultrasonic transducer and preparation method thereof |
| CN103383404A (en) * | 2013-07-04 | 2013-11-06 | 清华大学 | Current measuring circuit |
| CN104578362A (en) * | 2015-01-21 | 2015-04-29 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Vibration energy collection device |
| CN104613861A (en) * | 2015-02-02 | 2015-05-13 | 上海集成电路研发中心有限公司 | Flexible active strain or pressure sensor structure and preparation method |
| CN105070823A (en) * | 2015-08-03 | 2015-11-18 | 复旦大学 | Pressure sensor and manufacturing method thereof |
| CN105203019A (en) * | 2015-10-19 | 2015-12-30 | 上海集成电路研发中心有限公司 | Flexible active pressure/strain sensor structure and manufacturing method thereof |
| CN105433905A (en) * | 2015-12-03 | 2016-03-30 | 杨松 | Wearing equipment for collecting human body vibration signals and method for collecting human body physiological signals |
| CN105552132A (en) * | 2016-02-04 | 2016-05-04 | 京东方科技集团股份有限公司 | Thin film transistor sensor and fabrication method thereof |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106950000A (en) * | 2017-03-29 | 2017-07-14 | 深圳大学 | A kind of Pulse pressure sensor, chip, device, system and preparation method thereof |
| CN107300392A (en) * | 2017-07-12 | 2017-10-27 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | A kind of Multifunction Sensor based on double gate thin-film transistor and preparation method thereof |
| CN110742592A (en) * | 2019-10-08 | 2020-02-04 | 郑州轻工业学院 | Human health detection method based on flexible piezoelectric electret pulse sensor |
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Application publication date: 20170322 |