CN107300392A - A kind of Multifunction Sensor based on double gate thin-film transistor and preparation method thereof - Google Patents
A kind of Multifunction Sensor based on double gate thin-film transistor and preparation method thereof Download PDFInfo
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- CN107300392A CN107300392A CN201710566681.1A CN201710566681A CN107300392A CN 107300392 A CN107300392 A CN 107300392A CN 201710566681 A CN201710566681 A CN 201710566681A CN 107300392 A CN107300392 A CN 107300392A
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- OFIYHXOOOISSDN-UHFFFAOYSA-N tellanylidenegallium Chemical compound [Te]=[Ga] OFIYHXOOOISSDN-UHFFFAOYSA-N 0.000 title claims abstract description 82
- 238000002360 preparation method Methods 0.000 title claims description 11
- 230000010287 polarization Effects 0.000 claims abstract description 23
- 239000007769 metal material Substances 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 239000000463 material Substances 0.000 claims description 21
- 238000000034 method Methods 0.000 claims description 21
- 230000004888 barrier function Effects 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 14
- 239000010408 film Substances 0.000 claims description 9
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 238000000427 thin-film deposition Methods 0.000 claims description 6
- 239000002033 PVDF binder Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 5
- 229920002981 polyvinylidene fluoride Polymers 0.000 claims description 5
- 230000005684 electric field Effects 0.000 claims description 4
- 239000002305 electric material Substances 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 3
- 230000008878 coupling Effects 0.000 abstract description 8
- 238000010168 coupling process Methods 0.000 abstract description 8
- 238000005859 coupling reaction Methods 0.000 abstract description 8
- 230000008859 change Effects 0.000 description 15
- 238000010586 diagram Methods 0.000 description 7
- 238000001514 detection method Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000035945 sensitivity Effects 0.000 description 3
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910004205 SiNX Inorganic materials 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000033228 biological regulation Effects 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
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- 230000008021 deposition Effects 0.000 description 1
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- 230000003628 erosive effect Effects 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
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- G—PHYSICS
- G01—MEASURING; TESTING
- G01D—MEASURING NOT SPECIALLY ADAPTED FOR A SPECIFIC VARIABLE; ARRANGEMENTS FOR MEASURING TWO OR MORE VARIABLES NOT COVERED IN A SINGLE OTHER SUBCLASS; TARIFF METERING APPARATUS; MEASURING OR TESTING NOT OTHERWISE PROVIDED FOR
- G01D5/00—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable
- G01D5/12—Mechanical means for transferring the output of a sensing member; Means for converting the output of a sensing member to another variable where the form or nature of the sensing member does not constrain the means for converting; Transducers not specially adapted for a specific variable using electric or magnetic means
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/34—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using capacitative elements
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/16—Measuring force or stress, in general using properties of piezoelectric devices
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- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Thin Film Transistor (AREA)
- Pressure Sensors (AREA)
Abstract
The invention discloses a kind of Multifunction Sensor based on double gate thin-film transistor, including double gate thin-film transistor and the one or more in the physical field that the top-gated pole of the double gate thin-film transistor is coupled；The physical field includes light field, thermal field, the field of force or magnetic field.The physical field is thermal field and the field of force.The Multifunction Sensor based on double gate thin-film transistor includes being integrated in same flexible substrate and at least two separate double gate thin-film transistors；Wherein, piezoelectric or non-polarised piezoelectric of the top gate surface of at least one double gate thin-film transistor provided with polarization；The surface of the piezoelectric is additionally provided with metal material.Using the Multifunction Sensor of the present invention based on double gate thin-film transistor, from different physic field couplings, the sensor of a variety of difference in functionalitys can be formed.
Description
Technical field
The invention belongs to sensor technical field, and in particular to a kind of Multifunction Sensor based on double gate thin-film transistor
And preparation method thereof.
Background technology
As the basic part of large area electron product, double gate thin-film transistor and its Related product have been enjoyed and swashed
The inviting development and implementation time.It has mainly grown into the industry of multi-million dollar using flat-panel monitor, and continues fluffy
The exhibition of breaking out.However, TFT potentiality are seldom explored in non-display applications, it is not yet ripe.
For example, flexible electronic skin is a kind of new machine application on human skin, it is applied on human emulated robot, can be possessed soft
The characteristics of property is bent.Its surface is may also act on simultaneously, for detecting the temperature of pressure and surrounding environment.
Most of electronic skin realizes the detection of pressure and temperature using a variety of different materials at this stage, causes it to prepare work
Skill becomes extremely complex.For example, in integrated capacitive pressure sensor, it will usually there is asking for the crosstalk between adjacent original paper
Topic, the accuracy of detection during so influenceing；In the pressure sensor of integrated CMOS, then cost of manufacture is had high and can not be simultaneous
The problem of holding flexible substrate.
The content of the invention
In order to solve the above problems, the first object of the present invention is：Invent a kind of integrated based on double grid film crystal
The Multifunction Sensor of pipe, from different physic field couplings, can form the sensor of a variety of difference in functionalitys.
To achieve the above object, the present invention is achieved by following technical scheme：
Multifunction Sensor of the present invention based on double gate thin-film transistor, including double gate thin-film transistor and in institute
One or more in the physical field for the top-gated pole coupling for stating double gate thin-film transistor；The physical field includes light field, thermal field, power
Field or magnetic field.
Further, the physical field is thermal field and the field of force.
Further, including it is integrated in same flexible substrate and at least two separate double gate thin-film transistors；
Wherein, piezoelectric or non-polarised piezoresistive material of the top gate surface of at least one double gate thin-film transistor provided with polarization
Material；The surface of the piezoelectric is additionally provided with metal material.
Further, the piezoelectric is Kynoar PVDF.
Further, the double gate thin-film transistor and non-polarised piezoelectric, metal material formation temperature sensor.
Further, the top-gated pole of the double gate thin-film transistor, non-polarised piezoelectric and metal material formation can
Become electric capacity.
Further, the source ground of the double gate thin-film transistor.
Further, the double gate thin-film transistor and poled piezoelectric material, metal material formation pressure sensor.
Further, the top layer of the piezoelectric of the polarization and the source electrode of double gate thin-film transistor are connected, and are grounded.
In order to solve the above problems, the second object of the present invention is：There is provided a kind of based on many of double gate thin-film transistor
The preparation technology of integrated temperature and pressure sensing sensor in function sensor, the characteristics of with simple, efficiency high is made, together
When the sensor prepared be not in cross-interference issue.
To achieve the above object, the present invention is achieved by following technical scheme：
The preparation method of Multifunction Sensor of the present invention based on double gate thin-film transistor, comprises the following steps：
Sputter layer of metal respectively on flexible substrate surface and graphical, form at least two independent bottom-gates；
Using thin film deposition processes, bottom gate insulating barrier and active layer are sequentially depositing respectively at least two bottom-gates；
Using wet method or dry etch process, at least two active layer surfaces be correspondingly formed respectively at least two groups source electrodes and
Drain electrode；
Using thin film deposition processes, top-gated insulating barrier is deposited on source electrode described in every group and drain electrode；
A layer of piezo-electric material is respectively coated on the surface of the top-gated insulating barrier；
Apply high electric field polarization to it after at least one layer of piezoelectric film forming, form the piezoelectric of polarization；
The redeposited metal material on the piezoelectric and unpolarized piezoelectric of the polarization.
Compared with prior art, the beneficial effects of the invention are as follows：
Multifunction Sensor of the present invention based on double gate thin-film transistor, by the top of double gate thin-film transistor
Grid coupling physical, so that it is merely not only in display field so that it is sent out in sensing and field of storage
Exhibition and popularization, specifically, the physical field includes light field, thermal field, the field of force or magnetic field, i.e. double gate thin-film transistor and light field coupling
Close, form photoelectric sensor；Coupled with thermal field, then form temperature sensor；Coupled with the field of force, form pressure sensor；With magnetic
Field coupling, is formed in Magnetic Sensor, real process, and with logic of the memristor R. concomitans between 0-1 is defined, it will thoroughly be removed from office
New current computer and electronic product.
At the same time or the above organic assembling between each physical field, for example, the combination in thermal field and the field of force, shape
Into the sensor sensed with temperature and pressure.This kind of sensor is directed to, it is described thin based on double grid in actual fabrication process
The Multifunction Sensor of film transistor is made on same flexible substrate surface, and with pressure sensing part and
Part with TEMP, the preparation method of the two is substantially consistent, can synchronously carry out, and is simply that top-gated pole is coupled
The polarization or non-polarised processing that material is carried out can be completed.
Compare from process above, first, it is without using a variety of detections that pressure and temperature is realized without material；Together
When, the preparation method of pressure portion and temperature section is substantially consistent, can synchronously carry out, greatly save the time of preparation,
Improve efficiency, cost also just corresponding reduction.In addition, the crosstalk that will be caused in a variety of different materials integrating process is also not present in it
Problem, and then there is provided the precision of detection.
Brief description of the drawings
The embodiment to the present invention is described in further detail below in conjunction with the accompanying drawings, wherein：
Fig. 1 is the structural representation letter of the Multifunction Sensor based on double gate thin-film transistor described in the embodiment of the present invention 1
Figure；
Fig. 2 is temperature section in the Multifunction Sensor based on double gate thin-film transistor described in the embodiment of the present invention 1
Equivalent circuit diagram；
Fig. 3 is pressure portion in the Multifunction Sensor based on double gate thin-film transistor described in the embodiment of the present invention 1
Equivalent circuit diagram；
The structure schematic diagram of the Multifunction Sensor based on double gate thin-film transistor described in Fig. 4 embodiment of the present invention 2；
The equivalent circuit diagram of the Multifunction Sensor based on double gate thin-film transistor described in Fig. 5 embodiment of the present invention 3；
The structure schematic diagram of the Multifunction Sensor based on double gate thin-film transistor described in Fig. 6 embodiment of the present invention 4.
In figure：
1：Double gate thin-film transistor
10：Source electrode 11：Top-gated pole 12：Piezoelectric 13：Source electrode 14：Metal material 15：Flexible substrate
16：Bottom gate insulating barrier 17：Active layer 18：Top-gated insulating barrier 19：Bottom-gate
2：Memristor
Embodiment
The preferred embodiments of the present invention are illustrated below in conjunction with accompanying drawing, it will be appreciated that preferred reality described herein
Apply example to be merely to illustrate and explain the present invention, be not intended to limit the present invention.
Multifunction Sensor of the present invention based on double gate thin-film transistor, is by by double gate thin-film transistor 1
Top-gated pole 11 coupled with physical field, formed difference in functionality sensor.Specifically, the physical field includes light field, heat
Field, the field of force or magnetic field, it can carry out the organic assemblings of one or more.
Embodiment 1：
Physical field in the present embodiment includes thermal field and the field of force, i.e., after being coupled with double gate thin-film transistor 1, forms tool
There are TEMP and pressure sensing sensor, specifically, it includes being integrated in same flexible substrate 15 and separate
At least two double gate thin-film transistors 1, wherein, the surface of top-gated pole 11 of at least one double gate thin-film transistor 1 is provided with pole
The piezoelectric 12 or non-polarised piezoelectric 12 of change；The surface of the piezoelectric 12 is additionally provided with metal material 14.Also
It is to say, wherein at least one is the part as TEMP, one is used as pressure sensing part.
Therefore, during specifically used, when the change of ambient temperature, the change of non-polarised piezoelectric is caused, i.e.,
The change of electric capacity, then causes the electric current of the double gate thin-film transistor of temperature sensing portion to change, and the curent change
It is easy to gather and converts.In addition, by the regulation to device working bias voltage, making it be worked in sub-threshold region, because capacitance variations are drawn
The minor variations of the top-gated voltage risen can cause the change of the current index order of magnitude, so effectively improve sensitivity.
When the change of ambient pressure, the piezoelectric of polarization is caused to convert the pressure to voltage signal, and put on double grid
The top-gated of thin film transistor (TFT) simultaneously finally changes its output current size.Equally, maximum is possessed when it works in subthreshold region
Sensitivity.
Multifunction Sensor of the present invention based on double gate thin-film transistor, be with two double gate thin-film transistors 1
Example.Specifically as shown in figure 1, it includes two double gate thin-film transistors 1, the surface of the top-gated pole 11 of one of them is provided with polarization
Piezoelectric 12, the surface of another top-gated pole 11 is provided with non-polarised piezoelectric 12, then in the table of piezoelectric 12
Face is equipped with metal material 14.
Specifically, the double gate thin-film transistor 1 is all double-gate film transistor, and its concrete structure is from bottom to top successively
It is distributed as：Flexible substrate 15, bottom gate insulating barrier 16, active layer 17, top-gated insulating barrier 18；Bottom is provided with the bottom gate insulating barrier 16
Provided with source electrode 10 and drain electrode 13 in grid 19, the active layer.
Wherein, Au material is used in described the present embodiment of metal material 14, with better characteristics；The bottom gate
Insulating barrier 16 and top-gated insulating barrier 18 use dielectric, and the present embodiment uses silicon nitride SiNx materials；It is described to have
Active layer 17 uses amorphous silicon hydride a-Si:H materials；The flexible substrate 15 uses polyimides PI materials.
The material of the piezoelectric 12 is the copolymer of Kynoar PVDF or Kynoar.Specifically
Ground, the double gate thin-film transistor 1 and non-polarised piezoelectric 12, the formation temperature sensor of metal material 14, i.e., it is described double
Top-gated pole 11, non-polarised piezoelectric 12 and the formation variable capacitance of metal material 14 of gate thin-film transistors 1, it is with temperature
Change and change.
When external temperature changes, metal material 14 is acted on first, is then passed to the piezoelectric 12, institute
The Kynoar PVDF in piezoelectric 12 is stated because of the change of external temperature, then can occur the change of electric capacity, so that double
The electric current of gate thin-film transistors changes, and then the enhanced processing for passing through peripheral circuit, you can obtains correspondence and accurately changes
Value, i.e., with high sensitivity.
It should be noted that being also to belong to for having the other materials of equivalent efficacy similar to Kynoar PVDF
The scope that piezoelectric 12 of the present invention is protected, simply preferred above material.
Meanwhile, as shown in Fig. 2 it is the circuit after equivalent, the source electrode 20 of the double gate thin-film transistor 1 is grounded, its electricity
Road system is very simple, and cost is also very low.
For pressure sensing portion, the double gate thin-film transistor 1 is formed with the piezoelectric 12, the metal material 14 that polarize
Pressure sensor.Specifically, the piezoelectric 12 of the polarization, with stronger piezoelectric property, it is possible to convert the pressure to
Voltage signal.Its equivalent circuit diagram is as shown in figure 3, the top layer and double gate thin-film transistor 1 of the piezoelectric 12 of the polarization
Source electrode is connected, and is grounded.Pressure signal is converted to voltage signal by the piezoelectric 12 so polarized, and it is thin to put on double grid
The top-gated pole of film transistor 1, and finally change its output current size.
Above is the structure and its performance to the Multifunction Sensor of the present invention based on double gate thin-film transistor are done
Go out specifically, its preparation method is specifically described below, step is as follows：
S1：Layer of metal is sputtered respectively and graphical, form two independent bottom-gates 19 on the surface of flexible substrate 15；
S2：Using thin film deposition processes, bottom gate insulating barrier 16 and active layer are sequentially depositing respectively in two bottom-gates 19
17；
S3：Using wet method or dry etch process, two groups of Hes of source electrode 10 are correspondingly formed respectively on two surfaces of active layer 17
Drain electrode 13；
S4：Using thin film deposition processes, the deposition top-gated insulating barrier 18 on source electrode 10 described in every group and drain electrode 13；
S5：A layer of piezo-electric material 12 is coated with the surface of the top-gated insulating barrier 18；
S6：Apply high electric field polarization to it after the film forming of piezoelectric 12, form the piezoelectric 12 of polarization；
S7：The redeposited metal material 14 on the piezoelectric 12 and unpolarized piezoelectric 12 of the polarization.
Specifically, it is integrated with flexible substrate using double gate thin-film transistor, overcome the corrosion resistant that existing electronics skin faces
The piezoelectric of polarization is attached to the top-gated of double gate thin-film transistor, pressure with the problem of can not being integrated into flexible material by erosion
The output current of double gate thin-film transistor can be converted into via poled piezoelectric material film, so as to realize the sensing of pressure.
Meanwhile, unpolarized piezoelectric is attached to the top-gated pole of double gate thin-film transistor, in unpolarized piezoresistive material
The other end of material adds suitable bias voltage, can convert temperature signal, so as to realize stable sensing.
Then method made above is integrated in one without pressure sensing and TEMP is respectively prepared using different materials
Rise, i.e., simply after depositing piezoelectric material, also need to apply high electric field polarization for pressure sensing part, so that its
Voltage signal is produced under the change of pressure, and puts on the top-gated of double gate thin-film transistor, and finally changes its output current
Size.For the part of temperature sensor, then without process above, it is possible to form temperature variation band and carry out capacitance variations, enter
And it is converted into the change of the output current of double gate thin-film transistor.This method not only enormously simplify the technique of processing, also avoid
The problem of crosstalk, also just accordingly improve the precision of detection.
TEMP and pressure sensing are integrated in same flexible substrate by the present invention, and possess micron-sized size knot
Structure, under the premise of keeping production process simple, greatly reduces the production cost of product.Therefore, it can realize large area
The electronics skin of highdensity sensor arrangement, if arranging the temperature sensor of enough quantity, can also build multiple spot
Temperature, pressure information acquisition system.
Embodiment 2：
The present embodiment only difference is that with embodiment 1：The quantity for the double gate thin-film transistor 1 that the present invention is set is three
It is individual, it is specific as shown in figure 4, the Multifunction Sensor based on double gate thin-film transistor, including three double grid film crystals
Pipe 1, piezoelectric 12 of the surface provided with polarization of the top-gated pole 11 of one of them, the surface of the top-gated pole 11 of another two is provided with non-
The piezoelectric 12 of polarization, is then equipped with metal material 14 on the surface of piezoelectric 12.It that is to say：Base of the present invention
The Multifunction Sensor of double gate thin-film transistor is provided with two temperature sensing portions, single pressure sensing portion.Its is specific
Operation principle and preparation method it is consistent with embodiment 1, will not be repeated here.
Embodiment 3：
The present embodiment and the difference of embodiment 1 are：Physical field is magnetic field, its top-gated with double gate thin-film transistor 1
The coupling of pole 11 forms Magnetic Sensor, is used in combination with memristor, as shown in Figure 5.
Embodiment 4：
The present embodiment and the difference of embodiment 1 are：Physical field is light field, its top-gated with double gate thin-film transistor 1
The coupling of pole 11 forms photoelectric sensor, and concrete structure schematic diagram is as shown in Figure 6.Wherein top-gated extremely transparency conducting layer, light is from top
Portion enters the inside of double gate thin-film transistor 1 and absorbed by three dimension channel, and then influences output current, by bottom-gate 19 to double grid
The workspace of thin film transistor (TFT) 1 is selected, wherein when being operated in sub-threshold region, and the amplitude that output current changes with outfield is most
Greatly.
The other structures of Multifunction Sensor of the present invention based on double gate thin-film transistor referring to prior art,
This is repeated no more.
The above described is only a preferred embodiment of the present invention, any formal limitation not is made to the present invention, therefore
Every any modification that without departing from technical solution of the present invention content, the technical spirit according to the present invention is made to above example,
Equivalent variations and modification, in the range of still falling within technical solution of the present invention.
Claims (10)
1. a kind of Multifunction Sensor based on double gate thin-film transistor, it is characterised in that：
One kind or many including double gate thin-film transistor and in the physical field that the top-gated pole of the double gate thin-film transistor is coupled
Kind；
The physical field includes light field, thermal field, the field of force or magnetic field.
2. the Multifunction Sensor according to claim 1 based on double gate thin-film transistor, it is characterised in that：
The physical field is thermal field and the field of force.
3. the Multifunction Sensor according to claim 2 based on double gate thin-film transistor, it is characterised in that：
Including being integrated in same flexible substrate and at least two separate double gate thin-film transistors；
Wherein, piezoelectric or non-polarised pressure of the top gate surface of at least one double gate thin-film transistor provided with polarization
Electric material；
The surface of the piezoelectric is additionally provided with metal material.
4. the Multifunction Sensor according to claim 3 based on double gate thin-film transistor, it is characterised in that：
The piezoelectric is Kynoar PVDF.
5. the Multifunction Sensor based on double gate thin-film transistor according to claim 3 or 4, it is characterised in that：
The double gate thin-film transistor and non-polarised piezoelectric, metal material formation temperature sensor.
6. the Multifunction Sensor according to claim 5 based on double gate thin-film transistor, it is characterised in that：
Top-gated pole, non-polarised piezoelectric and the metal material formation variable capacitance of the double gate thin-film transistor.
7. the Multifunction Sensor according to claim 6 based on double gate thin-film transistor, it is characterised in that：
The source ground of the double gate thin-film transistor.
8. the Multifunction Sensor based on double gate thin-film transistor according to claim 3 or 4, it is characterised in that：
The double gate thin-film transistor and poled piezoelectric material, metal material formation pressure sensor.
9. the Multifunction Sensor according to claim 8 based on double gate thin-film transistor, it is characterised in that：
The top layer of the piezoelectric of the polarization and the source electrode of double gate thin-film transistor are connected, and are grounded.
10. a kind of preparation of Multifunction Sensor based on double gate thin-film transistor as described in claim 3-9 any one
Method, comprises the following steps：
Sputter layer of metal respectively on flexible substrate surface and graphical, form at least two independent bottom-gates；
Using thin film deposition processes, bottom gate insulating barrier and active layer are sequentially depositing respectively at least two bottom-gates；
Using wet method or dry etch process, at least two groups source electrodes and leakage are correspondingly formed respectively at least two active layer surfaces
Pole；
Using thin film deposition processes, top-gated insulating barrier is deposited on source electrode described in every group and drain electrode；
A layer of piezo-electric material is respectively coated on the surface of the top-gated insulating barrier；
Apply high electric field polarization to it after at least one layer of piezoelectric film forming, form the piezoelectric of polarization；
The redeposited metal material on the piezoelectric and unpolarized piezoelectric of the polarization.
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| CN201710566681.1A CN107300392A (en) | 2017-07-12 | 2017-07-12 | A kind of Multifunction Sensor based on double gate thin-film transistor and preparation method thereof |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107843364A (en) * | 2017-11-02 | 2018-03-27 | 上海交通大学 | Pressure sensor, array of pressure sensors and preparation method thereof |
| CN109341880A (en) * | 2018-09-30 | 2019-02-15 | 中国科学院微电子研究所 | A kind of annulus temperature sensor |
| CN109764983A (en) * | 2019-03-06 | 2019-05-17 | 京东方科技集团股份有限公司 | Double gate thin-film transistor, sensor and production method |
| CN111060233A (en) * | 2019-12-03 | 2020-04-24 | 华南理工大学 | Piezoelectric type integrated flexible touch sensor and preparation method thereof |
| CN113884226A (en) * | 2021-09-28 | 2022-01-04 | 上海交通大学 | Pressure sensor, pressure sensing array and preparation method thereof |
| CN116546873A (en) * | 2023-07-06 | 2023-08-04 | 之江实验室 | Composite thin film transistor pressure sensor and manufacturing method thereof |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103682080A (en) * | 2013-11-25 | 2014-03-26 | 北京航空航天大学 | Manufacturing method of locally-polarized piezoelectric film sensor |
| CN104251751A (en) * | 2014-09-26 | 2014-12-31 | 中国科学院半导体研究所 | Multi-sense organ integrated electronic skin and manufacturing method thereof |
| CN105070823A (en) * | 2015-08-03 | 2015-11-18 | 复旦大学 | Pressure sensor and manufacturing method thereof |
| CN105301083A (en) * | 2015-11-02 | 2016-02-03 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Measurement device and method of charge-to-mass ratio of biomacromolecules |
| CN105405893A (en) * | 2015-12-21 | 2016-03-16 | 华南理工大学 | Planar split dual-gate thin film transistor and preparation method thereof |
| CN105683265A (en) * | 2013-10-29 | 2016-06-15 | 大金工业株式会社 | Film and method for producing same |
| CN104523285B (en) * | 2014-12-12 | 2016-09-21 | 广东东邦科技有限公司 | A kind of electronic skin and preparation method thereof |
| CN106104825A (en) * | 2014-02-26 | 2016-11-09 | 大金工业株式会社 | Bimorph type piezoelectric film |
| CN106510652A (en) * | 2016-10-25 | 2017-03-22 | 中山大学 | Pulse waveform and heart rate measuring method and device |
| CN207095585U (en) * | 2017-07-12 | 2018-03-13 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | A kind of Multifunction Sensor based on double gate thin-film transistor |
-
2017
- 2017-07-12 CN CN201710566681.1A patent/CN107300392A/en active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105683265A (en) * | 2013-10-29 | 2016-06-15 | 大金工业株式会社 | Film and method for producing same |
| CN103682080A (en) * | 2013-11-25 | 2014-03-26 | 北京航空航天大学 | Manufacturing method of locally-polarized piezoelectric film sensor |
| CN106104825A (en) * | 2014-02-26 | 2016-11-09 | 大金工业株式会社 | Bimorph type piezoelectric film |
| CN104251751A (en) * | 2014-09-26 | 2014-12-31 | 中国科学院半导体研究所 | Multi-sense organ integrated electronic skin and manufacturing method thereof |
| CN104523285B (en) * | 2014-12-12 | 2016-09-21 | 广东东邦科技有限公司 | A kind of electronic skin and preparation method thereof |
| CN105070823A (en) * | 2015-08-03 | 2015-11-18 | 复旦大学 | Pressure sensor and manufacturing method thereof |
| CN105301083A (en) * | 2015-11-02 | 2016-02-03 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | Measurement device and method of charge-to-mass ratio of biomacromolecules |
| CN105405893A (en) * | 2015-12-21 | 2016-03-16 | 华南理工大学 | Planar split dual-gate thin film transistor and preparation method thereof |
| CN106510652A (en) * | 2016-10-25 | 2017-03-22 | 中山大学 | Pulse waveform and heart rate measuring method and device |
| CN207095585U (en) * | 2017-07-12 | 2018-03-13 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | A kind of Multifunction Sensor based on double gate thin-film transistor |
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107843364A (en) * | 2017-11-02 | 2018-03-27 | 上海交通大学 | Pressure sensor, array of pressure sensors and preparation method thereof |
| CN107843364B (en) * | 2017-11-02 | 2020-06-23 | 上海交通大学 | Pressure sensor, pressure sensor array and preparation method thereof |
| CN109341880A (en) * | 2018-09-30 | 2019-02-15 | 中国科学院微电子研究所 | A kind of annulus temperature sensor |
| CN109764983A (en) * | 2019-03-06 | 2019-05-17 | 京东方科技集团股份有限公司 | Double gate thin-film transistor, sensor and production method |
| CN111060233A (en) * | 2019-12-03 | 2020-04-24 | 华南理工大学 | Piezoelectric type integrated flexible touch sensor and preparation method thereof |
| CN113884226A (en) * | 2021-09-28 | 2022-01-04 | 上海交通大学 | Pressure sensor, pressure sensing array and preparation method thereof |
| CN116546873A (en) * | 2023-07-06 | 2023-08-04 | 之江实验室 | Composite thin film transistor pressure sensor and manufacturing method thereof |
| CN116546873B (en) * | 2023-07-06 | 2023-09-19 | 之江实验室 | Composite thin film transistor pressure sensor and manufacturing method thereof |
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