CN105070823A - Pressure sensor and manufacturing method thereof - Google Patents
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- CN105070823A CN105070823A CN201510469367.2A CN201510469367A CN105070823A CN 105070823 A CN105070823 A CN 105070823A CN 201510469367 A CN201510469367 A CN 201510469367A CN 105070823 A CN105070823 A CN 105070823A
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Abstract
The invention belongs to the technical field of semiconductor sensors, and particularly discloses a pressure sensor and a manufacturing method thereof. The pressure sensor disclosed by the invention comprises at least one field effect transistor and a piezoelectric control gate, wherein the field effect transistor is an N-channel metal oxide semiconductor (NMOS) transistor or a P-channel metal oxide semiconductor (PMOS) transistor; the piezoelectric control gate comprises a piezoelectric film, an upper surface electrode of the piezoelectric film, a lower surface electrode of the piezoelectric film and a connection electrode; and the connection electrode is arranged between a gate of the field effect transistor and the lower surface electrode of the piezoelectric film. The pressure sensor disclosed by the invention is used for sensing a pressure signal, and has the characteristics of being simple in manufacturing process, small in cell area, high in chip integration level, high in sensitivity on pressure and the like.
Description
Technical field
The invention belongs to pressure sensor technique field, be specifically related to a kind of can highly integrated pressure sensor and manufacture method thereof, the particularly pressure sensor that combines with field-effect transistor of a kind of piezoelectric membrane and manufacture method thereof.
Background technology
Pressure sensor is widely used in electronic product, and different applications has different requirements, the resolution that some needs are higher, such as electronic scale, barometer to the structure of pressure sensor, performance and density; What have then needs higher integration density, such as touch-screen.In order to realize the perception of slight pressure signal to external world, intelligent skin needs higher resolution and higher integration density simultaneously.
Traditional pressure sensor is divided into deposition tube resistance type pressure sensor and capacitance-type pressure sensor, and wherein the former makes thin metal plate by external force and produces Piezoelectric Impedance effect, thus makes the change of impedance convert the signal of telecommunication to; The movable extremely relative of the fixed pole of glass and silicon is formed electric capacity by the latter, makes the distortion of movable pole cause the change of static capacity, thus convert the signal of telecommunication to by external force.Because the volume of traditional pressure sensor individual devices is comparatively large so integrated level is very low.
Wang Zhonglin etc. utilize zinc oxide nano fiber to make piezoelectric type pressure sensor [1], substantially increase the integration density of device, but owing to being difficult to the uniformity controlling nano-fibre cluster, making piezoelectric type pressure sensor technique very complicated, add the cost of device.Relative to the uniform nanofiber of growth, uniform membrane structure more easily obtains.Piezoelectric membrane combines with field-effect transistor technology by the present invention, and can make highly sensitive pressure sensor, integrated level is high, and technique and existing field-effect transistor process compatible.
[1]Wu,Wenzhuo,XiaonanWen,andZhongLinWang."Taxel-addressablematrixofvertical-nanowirepiezotronictransistorsforactiveandadaptivetactileimaging."Science340.6135(2013):952-957.。
Summary of the invention
The object of the invention is to propose pressure sensor that a kind of device cell area is little, integrated level is high and preparation method thereof.
The present invention combines piezoelectric with traditional field-effect transistor, by the field-effect transistor preparation technology of maturation, be worth pressure sensor, greatly can reduce the cellar area of single pressure sensor, improve the integrated level of device.
Pressure sensor provided by the invention, comprises a field-effect transistor and a piezoelectricity control gate.
In the present invention, described field-effect transistor is nmos pass transistor or PMOS transistor.
In the present invention, described piezoelectricity control gate comprises: the upper surface electrode of piezoelectric membrane, piezoelectric membrane, the lower surface electrode of piezoelectric membrane, connecting electrode between described field effect transistor gate and the lower surface electrode of piezoelectric membrane.
In the present invention, also comprise dielectric filler between described field-effect transistor and piezoelectricity control gate, this dielectric filler is formed by the insulating material of silicon dioxide, silicon nitride, silicon oxynitride or low-k.
In the present invention, described piezoelectric membrane is formed by piezoelectric; The upper surface electrode of described piezoelectric membrane is formed by the polysilicon of metal, alloy or doping; The lower surface electrode of described piezoelectric membrane is formed by the polysilicon of metal, alloy or doping; Described connecting electrode between field effect transistor gate and the lower surface electrode of piezoelectric membrane is formed by the polysilicon of metal, alloy or doping.
In the present invention, described piezoelectric, comprises zinc oxide, piezoelectric ceramic, Kynoar and other piezopolymers.
The present invention proposes the preparation method of described pressure sensor, concrete steps are as follows:
Prepare the interconnection line of field-effect transistor and source electrode and drain electrode according to standard technology, after chemico-mechanical polishing, form silicon wafer;
Deposit one deck dielectric on described silicon wafer;
At described dielectric surface deposition one hard mask layer, and defined the position of the connecting electrode between described field effect transistor gate and the lower surface electrode of piezoelectric membrane by photoetching process and etching technics;
With described hard mask layer for mask etching forms vertical passage, the degree of depth of etching need expose the gate electrode of described field-effect transistor;
Etch away remaining hard mask layer;
Conductor deposited material in established vertical channel, forms the connecting electrode between described field effect transistor gate and the lower surface electrode of piezoelectric membrane;
Then chemico-mechanical polishing is carried out to the surface forming structure, remove unnecessary conductor material;
Then the lower surface electrode of piezoelectric membrane is formed at the surface deposition conductor material forming structure;
The lower surface electrode of described piezoelectric membrane prepares piezoelectric membrane;
Then, on described piezoelectric membrane, conductor deposited material forms the upper surface electrode of piezoelectric membrane.
The preparation method of pressure sensor as above, described conductor is formed by the polysilicon of metal, alloy or doping; Described dielectric is formed by the insulating material of silicon dioxide, silicon nitride, silicon oxynitride or low-k.
The preparation method of pressure sensor as above, described connecting electrode between field effect transistor gate and the lower surface electrode of piezoelectric membrane contacts with the gate electrode of described field-effect transistor, and contacts with the lower surface electrode of described piezoelectric membrane.
The preparation method of pressure sensor as above, the preparation method of described piezoelectric membrane comprises nano impression, spin coating and other chemically grown method.
Pressure sensor proposed by the invention, piezoelectric membrane can respond to generation voltage signal under external force, and the voltage that external force difference produces is different, the grid of the voltage signal controlling filed effect transistor that induction produces, thus the output signal of controlling filed effect transistor, presence or absence and the size of pressure can be judged according to the output signal of field-effect transistor.The present invention has that manufacture craft is simple, cellar area is little, chip integration is high, sensitivity advantages of higher to pressure.
Accompanying drawing explanation
Fig. 1 is the profile of an embodiment of pressure sensor proposed by the invention.
Fig. 2, Fig. 3 are respectively the vertical view of two embodiments of pressure sensor proposed by the invention.
Fig. 4-Figure 12 is the process chart of an embodiment of the manufacture method of pressure sensor proposed by the invention.
Figure 13, Figure 14 are respectively circuit diagram and the equivalent circuit diagram of an embodiment of poly meta fluoroethylene piezoelectric film polarization proposed by the invention.
Embodiment
Below in conjunction with accompanying drawing and embodiment, the present invention is further detailed explanation for this.In the drawings, for convenience of description, be exaggerated the thickness in layer and region, shown size does not represent actual size.Reference diagram is the schematic diagram of idealized embodiments of the present invention, and illustrated embodiment should not be considered to the given shape being only limitted to region shown in figure, but comprises obtained shape, such as manufactures the deviation caused.Such as etch the curve obtained and usually have bending or mellow and full feature, but in embodiments of the present invention, all represent with rectangle, the expression in figure is schematic, but this should not be considered to limit the scope of the invention.
Fig. 1 is an embodiment of pressure sensor proposed by the invention, and it is the longitudinal sectional drawing of this device.As shown in Figure 1, pressure sensor proposed by the invention comprises, the field-effect transistor be jointly made up of substrate 101, source electrode 102, drain electrode 103, gate oxide 104 and grid 105, and source electrode 102 is drawn by electrode 107, drain electrode 103 is drawn by electrode 108, and grid 105 is drawn by electrode 106.Wherein field-effect transistor can be NMOS also can be PMOS, because field-effect transistor manufacturing technology is the technology of comparative maturity, just symbolically each several part is drawn here.Electrode 106, electrode 107 and electrode 108 are formed by the polysilicon of metal, alloy or doping; Dielectric 109 is formed by the insulating material of silicon dioxide, silicon nitride, silicon oxynitride or low-k.
Piezoelectric membrane 111 is main piezoelectricity converting member, the lower surface electrode 110 of piezoelectric membrane and the upper surface electrode 112 of piezoelectric membrane can ensure that piezoelectric membrane 111 is responded to the voltage produced and is applied on the grid 105 of field-effect transistor by electrode 106, thus controlling filed effect transistor.Piezoelectric membrane 111 is formed by zinc oxide, piezoelectric ceramic, Kynoar or other piezopolymers, and the lower surface electrode 110 of piezoelectric membrane and the upper surface electrode 112 of piezoelectric membrane are formed by the polysilicon of metal, alloy or doping.
Dielectric 301 plays the effect of isolation, and the thickness that dielectric 301 is larger can reduce the ghost effect of device, increases the resolution of pressure sensor; Dielectric 301 is formed by the insulating material of silicon dioxide, silicon nitride, silicon oxynitride or low-k.
Piezoelectric membrane 111 is positioned at the vertical direction of gate electrode 105, and in order to obtain larger piezoelectric signal, the effective area of piezoelectric membrane 111 is larger than the effective area of gate electrode 105.Fig. 2, Fig. 3 are two embodiments of piezoelectric transducer vertical view proposed by the invention, and gate electrode 105 is positioned at immediately below piezoelectric membrane 111, as shown in Figure 2; For meeting different design requirements, gate electrode 105 also can be positioned at the side-lower of piezoelectric membrane 111, as shown in Figure 3, by conductor interconnection line 201 by lower surface electrode 110 conducting of electrode 106 with piezoelectric membrane.Conductor interconnection line 201 is formed by the polysilicon of metal, alloy and doping.
Piezoelectric sensing device disclosed in this invention can be manufactured by a lot of method, and described below is the technological process of a manufacture proposed by the invention embodiment of the piezoelectric sensing device of structure as shown in Figure 1.
First, as shown in Figure 4, be a merit can completely field-effect transistor, carried out drain interconnects line electrode 107 and source electrode interconnection line electrode 108.Field-effect transistor manufacturing process has been the technology of comparative maturity, here just symbolically each several part of field-effect transistor is drawn, device vertical view corresponding to Fig. 4 device architecture as shown in Figure 5, carries out electric isolation by dielectric 109 between each electrode.
Next, the surface deposition dielectric 301 of scene effect transistor, then at the surperficial spin coating photoresist 302 of dielectric 301, and drying and processing, as shown in Figure 6; Device vertical view now corresponding to device architecture as shown in Figure 7, shows dielectric 301 and the relative position of field-effect transistor for the sake of simplicity, here the source electrode 102 of field-effect transistor, drain electrode 103 and gate electrode 105 dotted line frame is drawn.
Then, make the position of electrode 106 by lithography, as Fig. 8, etching dielectric 301 and dielectric 109 expose the surface of gate electrode 105, can ensure that gate electrode 105 and electrode 106 have good contact like this.Device vertical view now corresponding to device architecture as shown in Figure 9, can obviously see gate electrode 105 from Fig. 9.
Then etch away photoresist 302, conductor deposited material obtains electrode 106, and obtains smooth surface by chemico-mechanical polishing and facilitate ensuing technique, as shown in Figure 10.Device vertical view now corresponding to device architecture as shown in figure 11.
Next, conductor deposited material obtains the lower surface electrode 110 of piezoelectric membrane, the lower surface electrode 110 of piezoelectric membrane makes uniform piezoelectric membrane 111 with nano impression, spin coating or other chemically grown methods, then conductor deposited material obtains the upper surface electrode 112 of piezoelectric membrane, just completes the basic structure of pressure sensor.As shown in figure 12.
To different piezoelectrics, the piezoelectric membrane of uniformity can be obtained by different preparation methods, the film of Kynoar such as can be obtained by the organic solution of spin coating Kynoar on the bottom electrode 110 of piezoelectric membrane, then film is dried and form polyvinylidene difluoride film, because Kynoar just has obvious piezoelectric effect after polarization, after completing the basic structure of pressure sensor, can polarize by the substrate of scene effect transistor 101 and the top electrode 112 of piezoelectric membrane add direct voltage source 401 pairs of poly meta fluoroethylene piezoelectric films 111, as shown in figure 13.
Figure 14 gives the equivalent circuit diagram of poly meta fluoroethylene piezoelectric film polarized circuit, owing to only having gate oxide 104 and piezoelectric membrane 111 to be dielectrics in circuit, so the polarized circuit of poly meta fluoroethylene piezoelectric film can be regarded as direct voltage source 401, piezoelectric membrane electric capacity 402 are connected with gate oxide capacitance 403, when ensureing that gate oxide 104 is not breakdown, the polarization to poly meta fluoroethylene piezoelectric film 111 can be realized.
As mentioned above, when not departing from spirit and scope of the invention, many embodiments having very big difference can also be formed.Should be appreciated that except as defined by the appended claims, the invention is not restricted to instantiation described in the description.
Claims (8)
1. a pressure sensor, is characterized in that, comprises a field-effect transistor and a piezoelectricity control gate; Wherein:
Described field-effect transistor is nmos pass transistor or PMOS transistor;
Described piezoelectricity control gate comprises piezoelectric membrane, the upper surface electrode of piezoelectric membrane, the lower surface electrode of piezoelectric membrane, the connecting electrode between described field effect transistor gate and the lower surface electrode of piezoelectric membrane.
2. pressure sensor according to claim 1, it is characterized in that, comprise dielectric filler between described field-effect transistor and piezoelectricity control gate, this dielectric filler is formed by the insulating material of silicon dioxide, silicon nitride, silicon oxynitride or low-k.
3. pressure sensor according to claim 1, is characterized in that, described piezoelectric membrane is formed by piezoelectric; The upper surface electrode of described piezoelectric membrane is formed by the polysilicon of metal, alloy or doping; The lower surface electrode of described piezoelectric membrane is formed by the polysilicon of metal, alloy or doping; Described connecting electrode between field effect transistor gate and the lower surface electrode of piezoelectric membrane is formed by the polysilicon of metal, alloy or doping.
4. pressure sensor according to claim 3, is characterized in that, described piezoelectric, is selected from zinc oxide, piezoelectric ceramic, Kynoar and other piezopolymers.
5. the preparation method of pressure sensor as claimed in claim 1, it is characterized in that, concrete steps are as follows:
Prepare the interconnection line of field-effect transistor and source electrode and drain electrode, after chemico-mechanical polishing, form silicon wafer;
Deposit one deck dielectric on described silicon wafer;
At described dielectric surface deposition one hard mask layer, and defined the position of the connecting electrode between described field effect transistor gate and the lower surface electrode of piezoelectric membrane by photoetching process and etching technics;
With described hard mask layer for mask etching forms vertical passage, the degree of depth of etching need expose the gate electrode of described field-effect transistor;
Etch away remaining hard mask layer;
Conductor deposited material in established vertical channel, forms the connecting electrode between described field effect transistor gate and the lower surface electrode of piezoelectric membrane;
Then chemico-mechanical polishing is carried out to the surface forming structure, remove unnecessary conductor material;
Then the lower surface electrode of piezoelectric membrane is formed at the surface deposition conductor material forming structure;
The lower surface electrode of described piezoelectric membrane prepares piezoelectric membrane;
Then, on described piezoelectric membrane, conductor deposited material forms the upper surface electrode of piezoelectric membrane.
6. the preparation method of pressure sensor according to claim 5, is characterized in that, described conductor is formed by the polysilicon of metal, alloy or doping; Described dielectric is formed by the insulating material of silicon dioxide, silicon nitride, silicon oxynitride or low-k.
7. the preparation method of pressure sensor according to claim 5, it is characterized in that, described connecting electrode between described field effect transistor gate and the lower surface electrode of piezoelectric membrane contacts with the gate electrode of described field-effect transistor, and contacts with the lower surface electrode of described piezoelectric membrane.
8. the preparation method of pressure sensor according to claim 5, is characterized in that, the preparation method of described piezoelectric membrane is nano impression, spin coating or chemically grown method.
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Cited By (10)
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| CN105841849A (en) * | 2016-03-25 | 2016-08-10 | 电子科技大学 | Flexible pressure sensor and film transistor integrated member and preparation method thereof |
| CN106510652A (en) * | 2016-10-25 | 2017-03-22 | 中山大学 | Pulse waveform and heart rate measuring method and device |
| CN106949910A (en) * | 2017-05-09 | 2017-07-14 | 沈阳工业大学 | It is a kind of based on nano composite material it is self-driven, from perceive cantilever beam sensor |
| CN107300392A (en) * | 2017-07-12 | 2017-10-27 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | A kind of Multifunction Sensor based on double gate thin-film transistor and preparation method thereof |
| CN107381497A (en) * | 2017-06-30 | 2017-11-24 | 西安交通大学 | Micro-force sensor based on movable grid formula field-effect transistor and preparation method thereof |
| CN107462350A (en) * | 2017-08-17 | 2017-12-12 | 京东方科技集团股份有限公司 | A kind of piezoelectric transducer, pressure-detecting device, preparation method and detection method |
| CN107611253A (en) * | 2016-10-25 | 2018-01-19 | 王开安 | macromolecule polarized film and electronic device |
| CN109307564A (en) * | 2018-10-11 | 2019-02-05 | 华南理工大学 | A kind of integrated flexible touch sensation sensor and preparation method thereof based on nanometer piezoelectric material |
| CN110243504A (en) * | 2019-06-29 | 2019-09-17 | 上海中航光电子有限公司 | Pressure sensor device, the driving method of pressure sensor device and production method |
| CN116546873A (en) * | 2023-07-06 | 2023-08-04 | 之江实验室 | Composite thin film transistor pressure sensor and manufacturing method thereof |
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| CN105841849A (en) * | 2016-03-25 | 2016-08-10 | 电子科技大学 | Flexible pressure sensor and film transistor integrated member and preparation method thereof |
| CN107611253A (en) * | 2016-10-25 | 2018-01-19 | 王开安 | macromolecule polarized film and electronic device |
| CN106510652A (en) * | 2016-10-25 | 2017-03-22 | 中山大学 | Pulse waveform and heart rate measuring method and device |
| CN107611253B (en) * | 2016-10-25 | 2021-07-20 | 王开安 | High-molecular polarization film and electronic device |
| CN106949910A (en) * | 2017-05-09 | 2017-07-14 | 沈阳工业大学 | It is a kind of based on nano composite material it is self-driven, from perceive cantilever beam sensor |
| CN106949910B (en) * | 2017-05-09 | 2023-02-17 | 沈阳工业大学 | Self-driven and self-sensing cantilever beam sensor based on nano composite material |
| CN107381497A (en) * | 2017-06-30 | 2017-11-24 | 西安交通大学 | Micro-force sensor based on movable grid formula field-effect transistor and preparation method thereof |
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| CN107300392A (en) * | 2017-07-12 | 2017-10-27 | 广东顺德中山大学卡内基梅隆大学国际联合研究院 | A kind of Multifunction Sensor based on double gate thin-film transistor and preparation method thereof |
| CN107462350B (en) * | 2017-08-17 | 2020-02-18 | 京东方科技集团股份有限公司 | Piezoelectric sensor, pressure detection device, manufacturing method and detection method |
| CN107462350A (en) * | 2017-08-17 | 2017-12-12 | 京东方科技集团股份有限公司 | A kind of piezoelectric transducer, pressure-detecting device, preparation method and detection method |
| US11545610B2 (en) | 2017-08-17 | 2023-01-03 | Beijing Boe Technology Development Co., Ltd. | Piezoelectric sensor, pressure detecting device, manufacturing methods and detection method |
| CN109307564A (en) * | 2018-10-11 | 2019-02-05 | 华南理工大学 | A kind of integrated flexible touch sensation sensor and preparation method thereof based on nanometer piezoelectric material |
| CN109307564B (en) * | 2018-10-11 | 2024-05-10 | 华南理工大学 | Integrated flexible touch sensor based on nano piezoelectric material and preparation method thereof |
| CN110243504A (en) * | 2019-06-29 | 2019-09-17 | 上海中航光电子有限公司 | Pressure sensor device, the driving method of pressure sensor device and production method |
| CN110243504B (en) * | 2019-06-29 | 2021-06-15 | 上海中航光电子有限公司 | Pressure sensing device, driving method and manufacturing method of pressure sensing device |
| CN116546873A (en) * | 2023-07-06 | 2023-08-04 | 之江实验室 | Composite thin film transistor pressure sensor and manufacturing method thereof |
| CN116546873B (en) * | 2023-07-06 | 2023-09-19 | 之江实验室 | Composite thin film transistor pressure sensor and manufacturing method thereof |
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