CN108365095A - Thin film transistor (TFT) and preparation method thereof - Google Patents
Thin film transistor (TFT) and preparation method thereof Download PDFInfo
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- CN108365095A CN108365095A CN201710923091.XA CN201710923091A CN108365095A CN 108365095 A CN108365095 A CN 108365095A CN 201710923091 A CN201710923091 A CN 201710923091A CN 108365095 A CN108365095 A CN 108365095A
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- 239000010409 thin film Substances 0.000 title claims abstract description 55
- 238000002360 preparation method Methods 0.000 title claims abstract description 15
- 239000004020 conductor Substances 0.000 claims abstract description 115
- 239000004065 semiconductor Substances 0.000 claims abstract description 72
- 239000000758 substrate Substances 0.000 claims abstract description 50
- 238000007639 printing Methods 0.000 claims abstract description 13
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 34
- 239000002041 carbon nanotube Substances 0.000 claims description 26
- 229910021393 carbon nanotube Inorganic materials 0.000 claims description 26
- 239000002184 metal Substances 0.000 claims description 22
- 229910052751 metal Inorganic materials 0.000 claims description 22
- 238000009826 distribution Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 16
- 238000005530 etching Methods 0.000 claims description 12
- 238000005516 engineering process Methods 0.000 claims description 11
- -1 Polyethylene terephthalate Polymers 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 8
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 claims description 7
- 239000003960 organic solvent Substances 0.000 claims description 7
- 238000004049 embossing Methods 0.000 claims description 4
- 229910021389 graphene Inorganic materials 0.000 claims description 4
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 4
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 4
- 229910052710 silicon Inorganic materials 0.000 claims description 4
- 239000010703 silicon Substances 0.000 claims description 4
- 229910052799 carbon Inorganic materials 0.000 claims description 3
- 238000001259 photo etching Methods 0.000 claims description 3
- 238000000926 separation method Methods 0.000 abstract description 2
- 239000000976 ink Substances 0.000 description 13
- 238000004519 manufacturing process Methods 0.000 description 11
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 10
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 9
- 239000004926 polymethyl methacrylate Substances 0.000 description 9
- 239000010408 film Substances 0.000 description 8
- 239000002127 nanobelt Substances 0.000 description 7
- 239000002238 carbon nanotube film Substances 0.000 description 5
- 229910052757 nitrogen Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 239000013078 crystal Substances 0.000 description 4
- 229920002521 macromolecule Polymers 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 239000001301 oxygen Substances 0.000 description 3
- 229910052760 oxygen Inorganic materials 0.000 description 3
- 239000002109 single walled nanotube Substances 0.000 description 3
- 238000004528 spin coating Methods 0.000 description 3
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 2
- 238000009825 accumulation Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 229910044991 metal oxide Inorganic materials 0.000 description 2
- 150000004706 metal oxides Chemical class 0.000 description 2
- 239000002105 nanoparticle Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000432 density-gradient centrifugation Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 239000004205 dimethyl polysiloxane Substances 0.000 description 1
- 235000013870 dimethyl polysiloxane Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000002452 interceptive effect Effects 0.000 description 1
- 238000000025 interference lithography Methods 0.000 description 1
- 239000002082 metal nanoparticle Substances 0.000 description 1
- 150000004702 methyl esters Chemical class 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- CXQXSVUQTKDNFP-UHFFFAOYSA-N octamethyltrisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)O[Si](C)(C)C CXQXSVUQTKDNFP-UHFFFAOYSA-N 0.000 description 1
- 239000005416 organic matter Substances 0.000 description 1
- 229920000620 organic polymer Polymers 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 238000004987 plasma desorption mass spectroscopy Methods 0.000 description 1
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/464—Lateral top-gate IGFETs comprising only a single gate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/20—Carbon compounds, e.g. carbon nanotubes or fullerenes
- H10K85/221—Carbon nanotubes
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- Thin Film Transistor (AREA)
Abstract
The present invention relates to a kind of thin film transistor (TFT)s and preparation method thereof, the thin film transistor (TFT) includes substrate, the semiconductor layer in the substrate, drain electrode, source electrode and insulating layer on the semiconductor layer and the grid on the insulating layer, the drain electrode and source space setting, the insulating layer is located between the drain electrode and the source electrode, the region that the semiconductor layer corresponds between the drain electrode and the source electrode is raceway groove, and the raceway groove is embedded with the tape conductor extended along channel width dimension.The thin film transistor (TFT) is embedded with the tape conductor extended along channel width dimension due to raceway groove, tape conductor can directly short circuit both sides channel region, it is equivalent to and reduces the distance between drain electrode and source electrode, reduce length of effective channel, the current density that thin film transistor (TFT) can thus be effectively improved, to make the thin film transistor (TFT) of printing that can also meet the driving requirement of OLED/QLED well.
Description
Technical field
The present invention relates to technical field of semiconductor device, more particularly to a kind of thin film transistor (TFT) and preparation method thereof.
Background technology
Thin film transistor (TFT) (ThinFilmTransistor, TFT) is a kind of key electronics in modern microelectronic technology
Element has been widely used in the fields such as flat-panel monitor at present.With printing technology come prepare thin film transistor (TFT) can pole
The earth reduces cost and improves production efficiency, great market value.
But existing printable semi-conducting material such as organic matter, carbon nano-tube film, metal oxide nanoparticles etc.
Mobility it is not high (<10cm2/ Vs), and the technologies such as mainstream printing technology such as ink-jet, intaglio plate, silk-screen printing being currently known
Patterning resolution is relatively low (be more than 20 microns), this will cause the thin film transistor channel length (source-drain electrode distance) of printing compared with
Long, the current density so as to cause the thin film transistor (TFT) of printing is relatively low, it is difficult to meet the driving requirement of OLED/QLED, this is limit
The major reason that the thin film transistor (TFT) of seal carving brush is applied in display field.
Invention content
Based on this, it is necessary to for the relatively low problem of the current density of above-mentioned conventional thin film transistor, provide a kind of electric current
The higher thin film transistor (TFT) of density.
Specific technical solution is as follows：
A kind of thin film transistor (TFT), including substrate, the semiconductor layer in the substrate, on the semiconductor layer
Drain electrode, source electrode and insulating layer and the grid on the insulating layer, the insulating layer are located at the drain electrode and the source electrode
Between, the region that the semiconductor layer corresponds between the drain electrode and the source electrode is raceway groove, and the raceway groove is embedded with along ditch
The tape conductor that road width direction extends.
Raceway groove refers to corresponding to the semiconductor layer regions between source electrode and drain electrode in field-effect transistor, and channel length is leakage
The distance between pole and source electrode, orientation be source electrode to drain direction, channel width dimension is perpendicular to channel length
Direction.When applying voltage on the grid in thin film transistor (TFT), pass through meeting in the spaced semiconductor layer of insulating layer with grid
Accumulate carrier, when carrier accumulation to a certain extent, between source electrode and drain electrode electrical connection to the semiconductor layer will conducting, to
There is electric current to flow to by raceway groove from source electrode to drain.In the thin film transistor (TFT) of the present invention, since raceway groove is embedded with along channel width side
To the tape conductor of extension, the conductivity of conductor is far above the conductivity of semiconductor, therefore tape conductor can direct short circuit both sides
Channel region, be equivalent to and reduce the distance between drain electrode and source electrode, substantially reduce length of effective channel.And film is brilliant
The current density of body pipe is inversely proportional to length of effective channel, thus can effectively improve the current density of thin film transistor (TFT), to make print
The thin film transistor (TFT) of brush can also meet the driving requirement of OLED/QLED well, greatly reduce production cost and improve life
Produce efficiency.
The material of the tape conductor is metal mold carbon nanotube in one of the embodiments,；And/or
The material of the semiconductor layer is semiconductor type carbon nano-tube.
The quantity of the tape conductor is multiple, multiple tape conductor parallel intervals in one of the embodiments,
Distribution.
The shape of the tape conductor is cuboid in one of the embodiments, and the width of the tape conductor is
The spacing of 30nm~1 μm, the two neighboring tape conductor is 30nm~1 μm.
The material of the substrate is glass, polyethylene terephthalate or silicon in one of the embodiments,；With/
Or
The material of the source electrode, the drain electrode and the grid is metal, metal mold carbon nanotube, graphene or organic leads
Body.
The present invention also provides a kind of preparation methods of thin film transistor (TFT), include the following steps：
Substrate is provided, forms tape conductor on the substrate；
The semiconductor layer for covering the tape conductor is formed on the substrate；
Formed on the semiconductor layer drain electrode that is spaced apart of width direction along the tape conductor and source electrode and
Insulating layer between the drain electrode and the source electrode；
Grid is formed on the insulating layer, obtains the thin film transistor (TFT).
The specific method for forming the tape conductor in one of the embodiments, is：Conductor is formed on the substrate
Layer, etches the conductor layer to form the tape conductor.
The specific method for forming the conductor layer in one of the embodiments, is：In the substrate surface deposited concentration
For the metal mold carbon nano-tube solution of 0.5mg/L~30mg/L, then takes out and perform etching so that in the substrate described in formation
Conductor layer.
The specific method for etching the conductor layer in one of the embodiments, is：Protection is formed in the conductor layer
Glue-line makes the protection glue-line form the protection that multiple parallel intervals are distributed using nanometer embossing or interference photoetching technology
Then band performs etching and washes away the protection band using organic solvent and described band-like led with forming the multiple of parallel interval distribution
Body.
The specific method for forming the semiconductor layer in one of the embodiments, is：It prints and partly leads on the substrate
Build carbon nanotube ink is to form the semiconductor layer.
Description of the drawings
Fig. 1 is the structural schematic diagram of the thin film transistor (TFT) of an embodiment；
Fig. 2 is the flow diagram of the preparation method of the thin film transistor (TFT) of an embodiment.
Specific implementation mode
To facilitate the understanding of the present invention, below with reference to relevant drawings to invention is more fully described.In attached drawing
Give presently preferred embodiments of the present invention.But the present invention can realize in many different forms, however it is not limited to this paper institutes
The embodiment of description.Keep the understanding to the disclosure more thorough on the contrary, purpose of providing these embodiments is
Comprehensively.
It should be noted that when element is referred to as " being installed on " another element, it can be directly on another element
Or there may also be elements placed in the middle.When an element is considered as " connection " another element, it can be directly connected to
To another element or it may be simultaneously present centering elements.When an element is considered as " connection " another element, it can
To be directly to another element or may be simultaneously present centering elements.
Unless otherwise defined, all of technologies and scientific terms used here by the article and belong to the technical field of the present invention
The normally understood meaning of technical staff is identical.Used term is intended merely to description tool in the description of the invention herein
The purpose of the embodiment of body, it is not intended that in the limitation present invention.Term as used herein "and/or" includes one or more phases
Any and all combinations of the Listed Items of pass.
As shown in Figure 1, a kind of thin film transistor (TFT) 100 in better embodiment of the present invention, including substrate 10, it is set to substrate
Semiconductor layer 20 on 10, the drain electrode 30 on semiconductor layer 20, source electrode 40 and insulating layer 50 and on the insulating layer 50
Grid 60, insulating layer 50 be located at drain electrode 30 and source electrode 40 between, semiconductor layer 20 correspond to drain electrode 30 and source electrode 40 between
Region is raceway groove, and raceway groove is embedded with the tape conductor 22 extended along channel width dimension.
Raceway groove refers to corresponding to the semiconductor layer regions between source electrode and drain electrode in field-effect transistor, and channel length is leakage
The distance between pole and source electrode, orientation be source electrode to drain direction, channel width dimension is perpendicular to channel length
Direction.When applying voltage on the grid 60 in thin film transistor (TFT) 100, partly led with grid 60 by the way that insulating layer 50 is spaced
Carrier can be accumulated in body layer 20, when carrier accumulation to a certain extent, the source electrode 40 that is electrically connected with semiconductor layer 20 and drain electrode
It will be connected between 30, to there is electric current to pass through raceway groove flow direction drain electrode 30 from source electrode 40.In the thin film transistor (TFT) 100 of the present invention, by
The tape conductor 22 extended along channel width dimension is embedded in raceway groove, the conductivity of conductor is far above the conductivity of semiconductor,
Therefore tape conductor 22 can directly short circuit both sides channel region, be equivalent to reduce drain electrode the distance between 30 and source electrode 40,
Substantially reduce length of effective channel.And the current density of thin film transistor (TFT) 100 is inversely proportional to length of effective channel, thus can have
Effect improves the current density of thin film transistor (TFT) 100, to make the thin film transistor (TFT) 100 of printing that can also meet OLED/ well
The driving requirement of QLED, greatly reduces production cost and improves production efficiency.
In one embodiment, the material of tape conductor 22 is metal mold carbon nanotube.In one embodiment, semiconductor
The material of layer 20 is semiconductor type carbon nano-tube.Carbon nanotube has excellent mechanics and electric property, also, with carbon nanometer
The variation of pipe spiral way, carbon nanotube can show metallicity or semiconductive.It can be incited somebody to action using density gradient centrifugation method
Semiconductor type carbon nano-tube and metal mold carbon nanotube separation come, and two kinds of carbon nanotubes have been commercialized at present.Semiconductor
Type carbon nanotube has higher carrier mobility, is the ideal material for manufacturing transistor semiconductor layer.Further, band-like
The material of conductor 22 and semiconductor layer 20 is single-walled carbon nanotube, and the distribution of diameter of single-wall carbon nano tube size is small, is lacked
It falls into less, there is higher uniformity consistency.
Optionally, the quantity of tape conductor 22 is multiple, the distribution of 22 parallel interval of multiple tape conductors.It is appreciated that band
Shape conductor 22, which can run through semiconductor layer 20, can not also run through semiconductor layer 20.
Optionally, the shape of tape conductor 22 is cuboid, and the width of tape conductor 22 is 30nm~1 μm, two neighboring
The spacing of tape conductor 22 is 30nm~1 μm.In this way, length of effective channel L is equal between multiple two neighboring tape conductors 22
Summation away from l, by adjusting the size of the width d of tape conductor 22, you can adjust the increase multiple of current density, such as work as d=l
When, theoretically current density rises to 2 times in the case of being not provided with tape conductor 22, as d=3l, then theoretically current density
4 times in the case of being not provided with tape conductor 22 are risen to, and so on.
Optionally, the material of substrate 10 is glass, polyethylene terephthalate or silicon.Optionally, source electrode 40, drain electrode
30 and grid 60 material be metal, metal mold carbon nanotube, graphene or organic conductor.
The thin film transistor (TFT) 100 of present embodiment reduces drain electrode the distance between 30 and source electrode 40, substantially reduces
Length of effective channel, thus the current density of thin film transistor (TFT) 100 can be effectively improved, to make the thin film transistor (TFT) 100 of printing
Also the driving requirement that can meet OLED/QLED well, greatly reduces production cost and improves production efficiency.
It is illustrated in figure 2 the flow diagram of the preparation method of the thin film transistor (TFT) of an embodiment of the present invention, the preparation
Method includes the following steps S1~S4：
S1, substrate 10 is provided, forms tape conductor 22 on the substrate 10.
S2, the semiconductor layer 20 for forming covering tape conductor 22 on the substrate 10.
S3, formed on semiconductor layer 20 along tape conductor 22 the drain electrode 30 that is spaced apart of width direction and source electrode 40 with
And the insulating layer 50 between drain electrode 30 and source electrode 40.
S4, grid 60 is formed on insulating layer 50, obtain thin film transistor (TFT).
Then the preparation method of the thin film transistor (TFT) of present embodiment is existed by forming tape conductor 22 on the substrate 10
The semiconductor layer 20 of covering tape conductor 22 is formed in substrate 10, to make tape conductor 22 be embedded at semiconductor layer 20, then
The drain electrode 30 being spaced apart along the width direction of tape conductor 22 and source electrode 40 are formed on semiconductor layer 20 and positioned at drain electrode
Insulating layer 50 between 30 and source electrode 40, and form grid 60 on insulating layer 50 and obtain thin film transistor (TFT).In this way, due to raceway groove
It is embedded with the tape conductor 22 extended along channel width dimension, the conductivity of conductor is far above the conductivity of semiconductor, therefore band
Shape conductor 22 can directly short circuit both sides channel region, be equivalent to reduce drain electrode the distance between 30 and source electrode 40, substantially
Reduce length of effective channel.And the current density of thin film transistor (TFT) is inversely proportional to length of effective channel, thus can effectively improve thin
The current density of film transistor, to make the thin film transistor (TFT) of printing that can also meet the driving requirement of OLED/QLED, pole well
The earth reduces production cost and improves production efficiency.
In one embodiment, the specific method for forming tape conductor 22 is：Conductor layer 202 is formed on the substrate 10, is carved
Conductor layer 202 is lost to form tape conductor 22.Optionally, before forming conductor layer 202, substrate 10 uses acetone, isopropanol
Or deionized water is cleaned, and nitrogen is used in combination to dry up.
In one embodiment, the material of tape conductor 22 is metal mold carbon nanotube, and the material of semiconductor layer 20 is half
Conductor type carbon nanotube.Further, the material of tape conductor 22 and semiconductor layer 20 is single-walled carbon nanotube.Optionally,
The quantity of tape conductor 22 is multiple, 22 parallel interval of multiple tape conductors distribution.Optionally, the shape of tape conductor 22 is length
Cube, width are 30nm~1 μm, and the spacing of two neighboring tape conductor 22 is 30nm~1 μm.Optionally, the material of substrate 10
For glass, polyethylene terephthalate or silicon.
Further, the specific method for forming conductor layer 202 is：10 surface deposited concentration of substrate be 0.5mg/L~
Metal mold carbon nano-tube solution organic solvents such as (solvent be) toluene, dimethylbenzene of 30mg/L, then take out perform etching so that
Conductor layer 202 is formed in substrate 10.In this way, substrate 10, which takes out air-dried rear surface, can form one layer of uniform metal mold carbon nanotube
Film, the metal mold carbon nano-tube film for then etching removing extraneous region can be obtained conductor layer 202.It is appreciated that being formed
The mode of conductor layer 202 is without being limited thereto, can select as needed such as inkjet printing technology, spin coating, spraying.
Further, the specific method of etching conductor layer 202 is：Protection glue-line 204 is formed in conductor layer 202, is used
Nanometer embossing or interference photoetching technology make protection glue-line 204 form the protection band 24 of multiple parallel intervals distribution, then into
Row is etched and washes away protection band 24 using organic solvent to form multiple tape conductors 22 of parallel interval distribution.In this way, protection
Covered part conductor layer 202 can be protected in etching process with 24, then can be obtained after organic solvent washes away band-like
Conductor 22.
In one embodiment, the specific method of nanometer embossing is that a strata methyl-prop is coated in conductor layer 202
E pioic acid methyl ester (PMMA) protects glue-line 204, is then heated at 65 DEG C -90 DEG C 3-15 minutes, multiple parallel with having later
The macromolecule seal (PDMS etc.) for the nanobelt shape structure being spaced apart is stamped on softened PMMA layers, is then transferred to room
Warm environment removed macromolecule seal after 2~8 minutes, the PMMA layers of nanobelt shape structure that will form multiple parallel interval distributions
That is protection band 24, and width (30nm-1 μm) and quantity can be adjusted according to seal structure, much smaller than the resolution limit of printing
(20μm).The specific method of interference lithography is that one layer photoresist of spin coating protects glue-line 204 in conductor layer 202, is then passed through
Interference exposes and cleans the nanobelt shape structure i.e. protection band that photoresist can be made to form multiple parallel interval distributions with developer solution
24, and width (30nm-1 μm) and quantity can be according to the parameter regulations of interference exposure.
In one embodiment, the specific method for forming semiconductor layer 20 is：Printing semi-conductor type carbon is received on the substrate 10
Mitron ink is to form semiconductor layer 20.
In one embodiment, drain electrode 30 and source electrode 40 are formed by printing electrode ink on semiconductor layer 20, half
Insulation inks are printed in conductor layer 20 and obtain insulating layer 50, and electrode ink is printed on insulating layer 50 and obtains grid 60.Specifically,
Electrode ink be metal nanoparticle ink, metal nanometer line ink, metal mold carbon nanotube ink, graphene ink and/or
Organic conductor ink.Insulation inks are organic polymer ink, inorganic, metal oxide nanoparticle inks and/or organic/nothing
Machine mixes dielectric ink.
The thin film transistor (TFT) that the preparation method of present embodiment obtains reduces drain electrode the distance between 30 and source electrode 40, real
Length of effective channel is reduced in matter, thus can effectively improve the current density of thin film transistor (TFT), to keep the film of printing brilliant
Body pipe can also meet the driving requirement of OLED/QLED well, greatly reduce production cost and improve production efficiency.
It is specific embodiment below.
Embodiment 1
One piece of substrate of glass is taken, is cleaned using acetone, nitrogen is used in combination to dry up.Substrate is immersed in a concentration of 0.5mg/L's
It takes out and air-dries in metal mold carbon nano-tube solution, after several minutes, then etching removes the metal mold carbon nanotube of extraneous region
Film makes to form conductor layer in substrate.It is coated with one layer of PMMA in conductor layer and protects glue-line, 15 points are then heated at 65 DEG C
Then clock is stamped in softened PMMA layers with the macromolecule seal of the nanobelt shape structure with the distribution of multiple parallel intervals
On, room temperature environment is transferred to, after five minutes removes seal, the PMMA layers of nano strip for forming multiple parallel interval distributions
The width of structure, that is, protection band, protection band is 30nm, and 30nm is divided between adjacent guardbands.Then at oxygen plasma etch
Organic solvent cleaning removal protection band is managed and uses, conductor layer is to form multiple tape conductors of parallel interval distribution.
Semiconductor type carbon nano-tube ink is printed in substrate, the semiconductor type carbon nano-tube for forming covering tape conductor is thin
Film, that is, semiconductor layer, tape conductor are embedded at semiconductor layer.
Source electrode, drain electrode and insulating layer are printed on the semiconductor layer, are finally printed grid on the insulating layer, are obtained film crystal
Pipe.
Embodiment 2
One piece of substrate of glass is taken, is cleaned using acetone, nitrogen is used in combination to dry up.Then by inkjet printing technology in substrate
Form one layer of uniform metal mold carbon nano-tube film, that is, conductor layer.One layer photoresist of spin coating protects glue-line in conductor layer,
It is exposed by interfering and is cleaned with developer solution, photoresist is to form the nanobelt shape structure that multiple parallel intervals are distributed to protect
The width of band, protection band is 1 μm, and 1 μm is divided between adjacent guardbands.Then it is handled and is used organic with oxygen plasma etch
Solvent cleaning removal protection band, conductor layer is to form multiple tape conductors of parallel interval distribution.
Semiconductor type carbon nano-tube ink is printed in substrate, the semiconductor type carbon nano-tube for forming covering tape conductor is thin
Film, that is, semiconductor layer, tape conductor are embedded at semiconductor layer.
Source electrode, drain electrode and insulating layer are printed on the semiconductor layer, are finally printed grid on the insulating layer, are obtained film crystal
Pipe.
Embodiment 3
One piece of substrate of glass is taken, is cleaned using acetone, nitrogen is used in combination to dry up.Substrate is immersed in the gold of a concentration of 30mg/L
It takes out and air-dries in genotype carbon nano-tube solution, after several minutes, then the metal mold carbon nanotube of etching removing extraneous region is thin
Film makes to form conductor layer in substrate.It is coated with one layer of PMMA in conductor layer and protects glue-line, is then heated 3 minutes at 90 DEG C,
Then it is stamped on softened PMMA layers with the macromolecule seal of the nanobelt shape structure with the distribution of multiple parallel intervals,
Room temperature environment is transferred to, after five minutes removes seal, the PMMA layers of nanobelt shape structure for forming multiple parallel interval distributions
That is the width of protection band, protection band is 90nm, and 30nm is divided between adjacent guardbands.Then it is handled simultaneously with oxygen plasma etch
Removal protection band is cleaned using organic solvent, conductor layer is to form multiple tape conductors of parallel interval distribution.
Semiconductor type carbon nano-tube ink is printed in substrate, the semiconductor type carbon nano-tube for forming covering tape conductor is thin
Film, that is, semiconductor layer, tape conductor are embedded at semiconductor layer.
Source electrode, drain electrode and insulating layer are printed on the semiconductor layer, are finally printed grid on the insulating layer, are obtained film crystal
Pipe.
Comparative example 1
One piece of substrate of glass is taken, is cleaned using acetone, nitrogen is used in combination to dry up.
Semiconductor type carbon nano-tube ink is printed in substrate, forms semiconductor type carbon nano-tube film, that is, semiconductor layer.
Source electrode, drain electrode and insulating layer are printed on the semiconductor layer, are finally printed grid on the insulating layer, are obtained film crystal
Pipe.
Thin film transistor (TFT) made from Examples 1 to 3 and comparative example 1 is subjected to current density detection, the results showed that embodiment 1
The current density of~2 obtained thin film transistor (TFT)s is 2 times of comparative example 1, the current density for the thin film transistor (TFT) that embodiment 3 obtains
It is 4 times of comparative example 1.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of thin film transistor (TFT), which is characterized in that semiconductor layer including substrate, in the substrate is set to described half
Drain electrode, source electrode and insulating layer in conductor layer and the grid on the insulating layer, the insulating layer are located at the drain electrode
Between the source electrode, the region that the semiconductor layer corresponds between the drain electrode and the source electrode is raceway groove, the raceway groove
It is embedded with the tape conductor extended along channel width dimension.
2. thin film transistor (TFT) according to claim 1, which is characterized in that the material of the tape conductor is that metal mold carbon is received
Mitron；And/or
The material of the semiconductor layer is semiconductor type carbon nano-tube.
3. thin film transistor (TFT) according to claim 1, which is characterized in that the quantity of the tape conductor be it is multiple, it is multiple
The tape conductor parallel interval distribution.
4. thin film transistor (TFT) according to claim 3, which is characterized in that the shape of the tape conductor is cuboid, institute
The width for stating tape conductor is 30nm~1 μm, and the spacing of the two neighboring tape conductor is 30nm~1 μm.
5. according to Claims 1 to 4 any one of them thin film transistor (TFT), which is characterized in that the material of the substrate be glass,
Polyethylene terephthalate or silicon；And/or
The material of the source electrode, the drain electrode and the grid is metal, metal mold carbon nanotube, graphene or organic conductor.
6. a kind of preparation method of thin film transistor (TFT), which is characterized in that include the following steps：
Substrate is provided, forms tape conductor on the substrate；
The semiconductor layer for covering the tape conductor is formed on the substrate；
The drain electrode being spaced apart along the width direction of the tape conductor and source electrode are formed on the semiconductor layer and are located at
Insulating layer between the drain electrode and the source electrode；
Grid is formed on the insulating layer, obtains the thin film transistor (TFT).
7. preparation method according to claim 6, which is characterized in that the specific method for forming the tape conductor is：Institute
It states and forms conductor layer in substrate, etch the conductor layer to form the tape conductor.
8. preparation method according to claim 7, which is characterized in that the specific method for forming the conductor layer is：Described
Substrate surface deposited concentration is the metal mold carbon nano-tube solution of 0.5mg/L~30mg/L, then takes out and performs etching so that institute
It states and forms the conductor layer in substrate.
9. preparation method according to claim 7, which is characterized in that the specific method for etching the conductor layer is：Institute
It states and forms protection glue-line in conductor layer, so that the protection glue-line is formed using nanometer embossing or interference photoetching technology multiple flat
Then the protection band of between-line spacing distribution is performed etching and washes away the protection band using organic solvent to form parallel interval distribution
Multiple tape conductors.
10. according to claim 6~9 any one of them preparation method, which is characterized in that form the specific of the semiconductor layer
Method is：Printing semiconductor type carbon nano-tube ink is to form the semiconductor layer on the substrate.
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