WO2017133106A1 - Structure de substrat souple et son procédé de formation, et dispositif électronique souple - Google Patents

Structure de substrat souple et son procédé de formation, et dispositif électronique souple Download PDF

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Publication number
WO2017133106A1
WO2017133106A1 PCT/CN2016/081233 CN2016081233W WO2017133106A1 WO 2017133106 A1 WO2017133106 A1 WO 2017133106A1 CN 2016081233 W CN2016081233 W CN 2016081233W WO 2017133106 A1 WO2017133106 A1 WO 2017133106A1
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WIPO (PCT)
Prior art keywords
flexible substrate
barrier layer
polymer
substrate structure
layer
Prior art date
Application number
PCT/CN2016/081233
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English (en)
Chinese (zh)
Inventor
刘钧
裴世铀
Original Assignee
无锡威迪变色玻璃有限公司
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Filing date
Publication date
Priority claimed from CN201610084031.9A external-priority patent/CN107046006A/zh
Priority claimed from CN201620118799.9U external-priority patent/CN205564745U/zh
Application filed by 无锡威迪变色玻璃有限公司 filed Critical 无锡威迪变色玻璃有限公司
Publication of WO2017133106A1 publication Critical patent/WO2017133106A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/12—Mountings, e.g. non-detachable insulating substrates
    • H01L23/14—Mountings, e.g. non-detachable insulating substrates characterised by the material or its electrical properties
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the subgroups H01L21/06 - H01L21/326

Definitions

  • the present invention relates to the field of electronic device manufacturing technology, and in particular, to a flexible substrate structure and a method of forming the same, and a flexible electronic device.
  • Flexible electronic and flexible display technology is one of the more active research directions in the field of electronic device manufacturing in recent years, and it is also one of the important directions for the development of electronic information industry.
  • Flexible electronic products with lightweight, bendable, foldable and even curlable properties have been extensively researched and even manufactured, for example, flexible electronic circuits, flexible electrochromic films, flexible photovoltaic devices, flexible smart labels or identification tags, flexible batteries Flexible smart cards, flexible light-emitting diodes, and organic light-emitting diode display panels.
  • the problem solved by the present invention is that the prior art flexible electronic product has a short life and low reliability.
  • a flexible substrate structure including: a flexible substrate; a planarization layer on the flexible substrate, the planarization layer being away from the flexible liner The surface on the bottom side is flat; a barrier layer on the planarization layer for blocking the penetration of oxygen and moisture.
  • the barrier layer comprises an inorganic barrier layer and a polymer barrier layer.
  • the polymeric barrier layer is on the inorganic barrier layer.
  • the inorganic barrier layer is on the polymer barrier layer.
  • the number of the inorganic barrier layer and the polymer barrier layer is plural, and the plurality of inorganic barrier layers and the plurality of polymer barrier layers are alternately stacked on the planarization layer.
  • the material of the planarization layer comprises polymethyl methacrylate, cyclohexane dimethanol diacrylate polymer, cyclic diacrylate polymer, isobornyl methacrylate polymer, three different One or more of a cyanurate polymer, a triacrylate polymer, an epoxy resin polymer, a silicone polymer, and a polyurethane polymer.
  • the material of the inorganic barrier layer comprises one of alumina, silica, titania, zirconia, zinc oxide, vanadium dioxide, chromium dioxide, manganese dioxide, silicon nitride, and silicon carbide or A variety.
  • the material of the polymer barrier layer comprises one or more of parylene, polyurethane and epoxy resin.
  • the material of the flexible substrate comprises ethylene-tetrafluoroethylene copolymer, polyethylene terephthalate, polyethylene, polycarbonate, polyolefin, polypropylene, polyether sulfone, polynaphthalene, polyacyl
  • a polyester film such as an imide or a polyester, polymethyl methacrylate, stainless steel, and aluminum.
  • nanoparticles for absorbing oxygen and moisture are dispersed in the flexible substrate.
  • the material of the nanometer comprises one or more of calcium oxide, cerium oxide, boron oxide, magnesium oxide, aluminum alkyl and aluminum alkoxide.
  • an embodiment of the present invention further provides a method for forming a flexible substrate structure, the method comprising: providing a flexible substrate; forming a planarization layer on the flexible substrate, the planarization layer being away from the flexibility a surface on one side of the substrate is flat; on the planarization layer Forming a barrier layer for blocking the penetration of oxygen and moisture.
  • the material of the planarization layer comprises polymethyl methacrylate, cyclohexane dimethanol diacrylate polymer, cyclic diacrylate polymer, isobornyl methacrylate polymer, three different One or more of a cyanurate polymer, a triacrylate polymer, an epoxy resin polymer, a silicone polymer, and a polyurethane polymer
  • forming the planarization layer includes: on the flexible substrate Coating the planarization layer monomer material; subjecting the planarization layer monomer material to ultraviolet light crosslinking or heat curing treatment to form a polymer planarization layer corresponding to the monomer material.
  • forming the barrier layer comprises forming an inorganic barrier layer and forming a polymer barrier layer.
  • the material of the inorganic barrier layer comprises one of alumina, silica, titania, zirconia, zinc oxide, vanadium dioxide, chromium dioxide, manganese dioxide, silicon nitride, and silicon carbide or
  • a plurality of processes for forming the inorganic barrier layer are atomic layer deposition, physical vapor deposition, or chemical vapor deposition.
  • the material of the polymer barrier layer comprises one or more of parylene, polyurethane and epoxy resin
  • forming the polymer barrier layer comprises: coating a barrier layer monomer material;
  • the barrier layer monomer material produces a thermo- or photopolymerization reaction to form a polymer barrier layer.
  • an embodiment of the present invention further provides a flexible electronic device including the above flexible substrate structure and a device layer on the flexible substrate structure.
  • the flexible substrate structure of the embodiment of the present invention includes a planarization layer and a barrier layer on the planarization layer, the planarization layer being capable of filling holes and cracks on the surface of the flexible substrate, so that the surface is flat and will not be
  • the tip topography of the flexible substrate surface is transferred to a barrier layer formed thereon; the barrier layer structure is dense for blocking oxygen and moisture permeation from the flexible substrate or the outside, thereby protecting subsequent formation thereon Device layer, improve The reliability and longevity of electronic devices.
  • the barrier layer of the embodiment of the invention may also be a two-layer structure and a multilayer structure, including an inorganic barrier layer and a polymer barrier layer.
  • the inorganic barrier layer is densely structured and is a main barrier layer of oxygen and moisture; the polymer barrier layer can block pinhole defects that may exist in the inorganic barrier layer and further block the penetration of oxygen and moisture.
  • the method for forming the flexible substrate structure and the flexible electronic device of the embodiments of the present invention can also block the penetration of moisture and oxygen, and improve the reliability and life of the electronic device.
  • FIG. 1 is a schematic view showing the structure of a flexible substrate according to an embodiment of the present invention.
  • FIG. 2 is a schematic view showing the structure of a flexible substrate according to another embodiment of the present invention.
  • FIG. 3 is a schematic view showing the structure of a flexible substrate according to another embodiment of the present invention.
  • FIG. 4 is a schematic view showing the structure of a flexible substrate according to another embodiment of the present invention.
  • the flexible substrate is usually made of a polymer material, the surface of which is not flat enough, and bubbles or micropores are present inside; after the device layer is formed on the flexible substrate, the uneven surface of the flexible substrate is easily introduced into the device layer.
  • the tip structure causes tip discharge to affect the life of the device; further, bubbles in the flexible substrate release oxygen or moisture, and external oxygen and moisture may also reach the device layer on the flexible substrate through holes in the flexible substrate, oxygen and Water vapor easily causes variations in the material of the device layer, which affects the reliability and longevity of the device. Therefore, if the flexible substrate is modified to have a flat surface and can block the penetration of oxygen and moisture into the device layer, the reliability and life of the electronic product formed thereon can be improved.
  • embodiments of the present invention provide a flexible substrate structure that is planarly planar and capable of blocking oxygen and water permeation from a flexible substrate or the outside. Through, thereby protecting the device layer subsequently formed thereon, improving the reliability and life of the electronic device.
  • FIG. 1 there is shown a schematic diagram of a flexible substrate structure including a flexible substrate 100, a planarization layer 110 on the flexible substrate 100, and a flat surface, in accordance with an embodiment of the present invention.
  • the barrier layer 120 on the layer 110.
  • the flexible substrate 100 is a physical support for the film material subsequently formed thereon, and is particularly suitable for low cost roll-to-roll (R2R) manufacturing processes due to its flexible or foldable features.
  • the flexible substrate 100 may be made of a polymer material, for example, the material of the flexible substrate 100 includes ethylene-tetrafluoroethylene copolymer (ETFE), polyethylene terephthalate ( PET), polyethylene (PE), polycarbonate, polyolefin, polypropylene, polyethersulfone (PES), polynaphthalene (PEN), polyimide, polyester, and polymethyl methacrylate Or a variety.
  • the flexible substrate 100 can also be a metal foil, such as stainless steel or aluminum.
  • the flexible substrate 100 may also include both a metal foil and a polymeric material.
  • the surface may not be flat enough to have various tip structures. If an electronic device layer is directly formed thereon, the tip affects device performance; in addition, for polymer materials, due to its molecular weight Larger and more complex, it is inevitable to form bubbles or holes in its interior and surface. When the bubbles release oxygen or moisture permeates into the device layer, or external oxygen or moisture permeates through the holes to the device layer, the performance of the device is affected. Therefore, as shown in FIG. 1, the flexible substrate structure of the embodiment of the present invention further forms a planarization layer 110 on the flexible substrate 100 for planarizing the surface of the flexible substrate 100, thereby solving the above problem.
  • the planarization layer 110 may fill a hole of the surface of the flexible substrate 100, and the planarization layer 110 is away from the flexible liner
  • the surface on the side of the bottom 100, that is, the surface on which the barrier layer 120 is formed, is flat and smooth, and does not transfer the tip structure of the surface of the flexible substrate 100 to the barrier layer or device layer of the upper layer.
  • the material of the planarization layer 110 includes polymethyl methacrylate, cyclohexane dimethanol diacrylate polymer, cyclic diacrylate polymer, isobornyl methacrylate polymer.
  • the planarization layer 110 of the present invention is not limited to the above materials, and other materials capable of filling the holes of the surface of the flexible substrate 100 and having a flat surface after formation may also be used to form the planarization layer 110.
  • the planarization layer can be formed by fluid evaporation, vacuum thermal evaporation, spray coating, or spin coating.
  • the method of forming the planarization layer 110 includes: first, applying a planarization layer monomer material to an upper surface of the flexible substrate 100 by vacuum thermal evaporation, due to a single The bulk material has a small molecular weight, can easily fill the pores and cracks on the surface of the flexible substrate 100, and under heating conditions, the fluidity of the monomer material is good, and it is easy to form a smooth surface without defects; The planarization layer monomer material is subjected to ultraviolet light crosslinking or heat curing treatment to form the planarization layer 110 corresponding to the monomer material, so that the planarization layer 110 is also smooth and defect-free.
  • a methyl methacrylate monomer material having good fluidity on the surface of the flexible substrate 100 can be easily filled, and pores and cracks on the surface of the flexible substrate 100 can be easily filled.
  • the planarization layer 110 of polymethyl methacrylate (organic glass, PMMA) is formed by irradiation of heat or ultraviolet light, thereby repairing defects of the surface of the flexible substrate 100, so that the surface of the planarization layer 110 is smooth and free from defects.
  • the planarization layer 110 may also be dispersed with a nanoparticle material capable of absorbing oxygen and moisture, so that the planarization layer 110 not only has a planarization and filling function, but also simultaneously It can absorb oxygen and moisture.
  • the material of the nanoparticles is a metal oxide
  • the nanoparticles may be calcium oxide (CaO), barium monoxide (BaO), boron oxide (BO), magnesium oxide ( One or more of the MgO) nanoparticles; in some embodiments, the material of the nanoparticles is an organometallic compound, for example, the nano may be an alkyl-aluminum and an alkoxy aluminum ( One or more of alkoxy-aluminum nanoparticles; in other embodiments, the nanoparticles may also include metal oxide nanoparticles and organometallic oxide nanoparticles.
  • the planarization layer 110 comprises magnesium oxide (MgO) nanoparticles, and the
  • the planarization layer 110 of the embodiment of the present invention further has a barrier layer 120.
  • the barrier layer 120 has a dense material structure and stable properties for blocking the penetration of oxygen, moisture, and other harmful gases into the formation layer.
  • the device layer on the top is formed by an atomic layer deposition process, such as an atomic layer deposition aluminum oxide film, the coverage of the atomic layer deposition process is good, the thickness can be precisely controlled, and the aluminum oxide
  • the material structure is very dense, and neither oxygen nor moisture can pass through easily.
  • the organic polymer can also be used to form a barrier layer 120 of a dense polymer material, such as a para-xylene dimolecular polymer, by vacuum thermal evaporation (90-170 ° C), followed by high temperature thermal cracking.
  • a dense polymer material such as a para-xylene dimolecular polymer
  • poly-p-xylene poly-p-xylene
  • the trade name is Parylene, which can be densely covered
  • the surface of the planarization layer 110 is a 0.1-100 micrometer parylene film coating deposited at room temperature under vacuum, which has uniform thickness, compact pinhole-free, transparent and stress-free, excellent waterproof and moisture-proof function, and Extremely excellent electrical insulation properties, heat resistance, weather resistance and chemical stability.
  • the barrier layer 120 may be a single layer structure or a multilayer structure. In some embodiments, as shown in FIG. 1, the barrier layer 120 is a single layer structure, and the barrier layer may be a polymer barrier layer formed of a structurally dense polymer material or formed of a structurally dense inorganic material. Inorganic barrier layer.
  • the barrier layer 120 is a two-layer structure, and the barrier layer 120 includes an inorganic barrier layer 1201 and a polymer barrier layer 1202.
  • the inorganic barrier layer 1201 is the main barrier layer of oxygen and moisture, and the polymer barrier layer 1202 can block pinhole defects that may exist in the inorganic barrier layer 1201 and further prevent the penetration of oxygen and moisture.
  • the inorganic barrier layer 1201 is located on the planarization layer 110, and the organic barrier layer 1202 is located on the inorganic barrier layer 1201.
  • the relative position of the inorganic barrier layer 1201 and the polymer barrier layer 1202 may be changed.
  • the polymer barrier layer 1202 may also be located in the planarization layer 110.
  • the inorganic barrier layer 1201 is located on the polymer barrier layer 1202.
  • the barrier layer 120 may also be a multilayer structure of more than two layers.
  • FIG. 4 a schematic structural view of a barrier layer 120 of a multilayer structure including a plurality of inorganic barrier layers 1201 and a plurality of polymer barrier layers 1202 is illustrated.
  • the plurality of inorganic barrier layers 1201 and the plurality of polymer barrier layers 1202 are alternately stacked on the planarization layer 110.
  • the number of the plurality of inorganic barrier layers 1201 and the plurality of polymeric barrier layers 1202 is determined based on their own material properties and thickness, as well as the barrier performance requirements that need to be achieved.
  • FIG. 4 a schematic structural view of a barrier layer 120 of a multilayer structure including a plurality of inorganic barrier layers 1201 and a plurality of polymer barrier layers 1202 is illustrated.
  • the plurality of inorganic barrier layers 1201 and the plurality of polymer barrier layers 1202 are alternately stacked on the planarization layer 110.
  • the bottommost layer and the topmost layer of the barrier layer 120 are the inorganic barrier layer 1201 and the polymer barrier layer 1202, respectively.
  • the bottom layer and the most The top layer may also be the polymer barrier layer 1202 and the inorganic barrier layer 1201, respectively, or both of the inorganic barrier layers 1201, or both of the polymer barrier layers 1202.
  • the material of the inorganic barrier layer 1201 includes aluminum oxide, silicon dioxide, titanium dioxide, zirconium oxide, zinc oxide, vanadium dioxide, chromium dioxide, manganese dioxide, silicon nitride, and silicon carbide.
  • One or more of the processes of forming the inorganic barrier layer 1201 may be atomic layer deposition, physical vapor deposition, or chemical vapor deposition.
  • an aluminum oxide layer is formed as the inorganic barrier layer 1201 by an atomic layer deposition process, the atomic layer deposition process has good coverage, thickness control is precise, and the alumina material structure is dense, oxygen and water. Gas can't pass through.
  • the material of the polymer barrier layer 1202 includes parylene (C, N, D, AF-4, One or more of SF, HT), polyurethane and epoxy resin.
  • the process of forming the polymer barrier layer 1202 may be fluid evaporation, vacuum thermal evaporation, spray coating or spin coating.
  • forming the polymer barrier layer 1202 includes: coating a barrier layer monomer material by a vacuum thermal evaporation process; causing the barrier layer monomer material to thermally or photopolymerize to form Polymer barrier layer.
  • the barrier layer monomer material may be p-xylene dimolecular polymer, p-xylene, polyfunctional (meth) acrylate, hexanediol diacrylate, acrylate, phenoxyethyl acrylate, cyanide B Base (mono) acrylate, isobornyl acrylate, isobornyl acrylate, octadecyl methacrylate, isodecyl acrylate, acrylic acid, lauryl ester, ⁇ -carboxyethyl acrylate, tetrahydrofurfuryl acrylate , dinitrile acrylate, pentafluorophenyl acrylate, nitrophenyl acrylate, 2-phenoxyethyl acrylate, 2-phenoxyethyl methacrylate, 2,2,2-methyl Acrylate, diethylene glycol diacrylate, triethylene glycol diacrylate, triethylene glycol dimethacrylate, tripropylene glycol diacrylate
  • the polymer barrier layer 1202 of the p-xylene dimer polymer monomer material can be formed by polymerization to form a parylene.
  • the specific processes and advantages have been described above, and are not described here. Narration. It should be noted that other monomer materials which can form a structurally dense polymer after polymerization can also be used to form the polymer barrier layer 1202.
  • the thickness of each layer of the above materials is relatively thin, and does not greatly affect the bendability or foldability of the flexible substrate 100.
  • the specific thickness can be set according to actual application conditions.
  • the planarization layer 110 has a thickness of 0.1 to 100 micrometers
  • the inorganic barrier layer 1201 has a thickness of 1 to 200 nanometers
  • the polymer barrier layer 1202 has a thickness of 0.1 to 100 micrometers. .
  • planarization layer 110, the inorganic barrier layer 1201 and the polymer barrier layer 1202 should also be insulating materials and have suitable thermal conductivity to facilitate heat dissipation of the electronic devices thereon.
  • an embodiment of the present invention further provides a method for forming the flexible substrate structure described above, the method comprising: providing a flexible substrate; forming a planarization layer on the flexible substrate, the planarization layer being away from the The surface of one side of the flexible substrate is flat; a barrier layer is formed on the planarization layer for blocking the permeation of oxygen and moisture.
  • the method for forming the structure of the flexible substrate has been described in the above embodiments. For details, refer to the above embodiments, and details are not described herein.
  • an embodiment of the present invention further provides a flexible electronic device including the flexible substrate structure in the above embodiment, and a device layer on the flexible substrate structure.
  • the flexible electronic device may be a flexible electronic circuit, a flexible electrochromic film, a flexible photovoltaic device, a smart tag or identification tag, a flexible battery, a smart card, a flexible light emitting diode, an organic light emitting diode display panel, or other sensitive to oxygen and moisture. Electronic devices, etc.
  • the flexible electronic device of the embodiment of the present invention by adopting the flexible substrate structure described above, blocks oxygen and moisture from entering the device layer, thereby improving the reliability and life of the flexible electronic device.

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electroluminescent Light Sources (AREA)
  • Laminated Bodies (AREA)

Abstract

L'invention concerne une structure de substrat souple et son procédé de formation, et un dispositif électronique souple. La structure de substrat souple comprend une sous-couche souple (100) ; une couche de planarisation (110) située sur la sous-couche souple (100), et dont la surface située à l'opposé du côté sous-couche souple (100) est plate ; et une couche barrière (120) située sur la couche de planarisation (110), la couche barrière (120) étant utilisée pour bloquer la perméation d'oxygène et de vapeur d'eau. La structure de substrat souple peut efficacement bloquer la perméation d'oxygène et de vapeur d'eau, ce qui permet d'améliorer la fiabilité et la durée de vie d'un dispositif électronique formé sur sur elle.
PCT/CN2016/081233 2016-02-06 2016-05-06 Structure de substrat souple et son procédé de formation, et dispositif électronique souple WO2017133106A1 (fr)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
CN201610084031.9 2016-02-06
CN201620118799.9 2016-02-06
CN201610084031.9A CN107046006A (zh) 2016-02-06 2016-02-06 柔性基板结构及其形成方法，柔性电子器件
CN201620118799.9U CN205564745U (zh) 2016-02-06 2016-02-06 柔性基板结构及柔性电子器件

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Cited By (2)

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Publication number Priority date Publication date Assignee Title
CN109904106A (zh) * 2019-02-28 2019-06-18 云谷（固安）科技有限公司 柔性显示面板及柔性显示面板的制备方法
CN114515682A (zh) * 2022-02-17 2022-05-20 浙江弘康半导体技术股份有限公司 一种柔性透明超低水汽透过率阻隔膜及其制备方法

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CN104979215A (zh) * 2015-06-23 2015-10-14 京东方科技集团股份有限公司 低温多晶硅薄膜晶体管及其制备方法

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CN1633217A (zh) * 2005-01-14 2005-06-29 铼宝科技股份有限公司 有机电激发光显示面板及其阻隔基板
CN103547449A (zh) * 2011-05-16 2014-01-29 Lg化学株式会社 多层塑料基板及其制备方法
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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109904106A (zh) * 2019-02-28 2019-06-18 云谷（固安）科技有限公司 柔性显示面板及柔性显示面板的制备方法
CN114515682A (zh) * 2022-02-17 2022-05-20 浙江弘康半导体技术股份有限公司 一种柔性透明超低水汽透过率阻隔膜及其制备方法

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