CN107111984A - 无基板柔性显示器及其制造方法 - Google Patents
无基板柔性显示器及其制造方法 Download PDFInfo
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- CN107111984A CN107111984A CN201580051235.6A CN201580051235A CN107111984A CN 107111984 A CN107111984 A CN 107111984A CN 201580051235 A CN201580051235 A CN 201580051235A CN 107111984 A CN107111984 A CN 107111984A
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- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
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- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
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- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
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- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
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Abstract
公开了一种无基板显示装置。无基板显示装置包括阻挡堆叠件。阻挡堆叠件包括多层无机阻挡膜和多层聚合物膜。无机阻挡膜和聚合物膜交替设置。无基板显示装置还包括设置在阻挡堆叠件上的薄膜晶体管(TFT)器件层、设置在薄膜晶体管器件层上的显示介质层、以及设置在显示介质层上的封装层。
Description
技术领域
示例实施方式涉及一种显示装置,并且特别涉及一种没有基板的柔性显示装置及其制造方法。
背景技术
柔性显示器已被考虑用于显示产业作为下一代信息显示技术。特别地,柔性有源矩阵有机发光二极管(AMOLED)显示器已经在诸如智能电话、智能家庭系统、可穿戴电子设备等的应用中引起了广泛的兴趣。
如果水分渗透到器件层中,则用于有源矩阵中的薄膜晶体管(TFT)器件可能劣化。例如,水分可能导致TFT器件的特性偏离设计范围,导致器件发生故障。此外,有机发光二极管(OLED)器件对水分和氧极其敏感。例如,当OLED材料暴露于水分时,OLED器件的发射可能退化。OLED器件的高反应性和低功函数阴极很容易被水分和氧气腐蚀。因此,AMOLED显示器通常需要两个基板来封装TFT和OLED器件,以确保这些器件的稳定性能。
由于其用于弯曲的柔韧性,塑料基板被选择作为柔性显示面板的基板。此外,塑料基材重量轻且不易碎,并且适合于卷对卷加工。证实用塑料基材制成的显示面板对于机械冲击是耐用的,并且允许可卷曲和可折叠的应用。在一些情况下,弯曲半径需要小于1mm。
然而,已知塑料基板对于防止水分进入器件层比玻璃基板的效果差。为了克服这些缺点,已经实施了几个提议。例如,参考图1,在塑料基板102上提供堆叠层104以减少水分和氧从其穿透。堆叠层104包括多对堆叠膜。一对堆叠膜包括聚合物膜106和无机膜108。例如,在图1中,在塑料基板102上设置三对聚合物膜106和无机膜108。
通常,通过溅射、等离子体增强化学气相沉积(PECVD)、原子层沉积(ALD)等在基板102上形成无机膜108。可以通过将单体蒸发到基板102上,然后由热或光将其固化来形成聚合物膜106。然而,由于塑料基板102的低耐热性,形成聚合物的加工温度通常被限制在150℃之下。此外,形成通常被设置在堆叠层104上的TFT器件层的加工温度受到堆叠层104的加工温度的限制。也就是说,塑料基板上的TFT器件层通常在较低的温度下形成,例如,低于150℃的温度。在低温下形成的TFT器件的器件性能和器件可靠性不足,并且它可能不适合于控制液晶显示器的液晶或OLED显示器的OLED器件。
为了解决上述问题,提出了在塑料基板的顶部上的堆叠层的新结构。参考图2,在塑料基板202的顶部提供堆叠层204,以减少水分和氧气从其穿过。堆叠层204可以包括多对堆叠膜。一对堆叠膜包括第一无机膜206和第二无机膜208。例如,在图2中,在塑料基板202上设置三对第一无机膜206和第二无机膜208。无机膜206、208可以是SiO2和SiNx。
尽管这些无机膜能够承受更高的温度以形成TFT器件层,但是它们也存在缺点。最重要的是,颗粒和针孔在器件制造期间是常见的,并且单个无机层不能完全覆盖颗粒或针孔。因此,水分或氧气可以沿着针孔或颗粒的边界渗透。通常,需要非常厚的无机阻挡层。特别地,其可能需要若干对堆叠的无机膜以获得更好的膜覆盖并降低水分和氧渗透。随着膜堆积和厚度增加,内部应力增加,这可能导致塑料基板弯曲并且可能损害无机膜的阻挡效果。此外,随着更多堆叠的无机膜,表面粗糙度变得更高。
因此,需要改进柔性显示器的结构以增加柔性显示器的可靠性。
发明内容
根据本公开,公开了一种无基板显示装置。无基板显示装置包括阻挡堆叠件。阻挡堆叠件包括多层无机阻挡膜和多层聚合物膜。无机阻挡膜和聚合物膜交替设置。无基板显示装置还包括设置在阻挡堆叠件上的薄膜晶体管(TFT)器件层;设置在所述TFT器件层上的显示介质层;以及设置在所述显示介质层上的封装层。无机阻挡膜中的一个设置在阻挡堆叠件的与封装层相对的最外层。
根据本公开,公开了一种制造无基板显示装置的方法。该方法包括在载体上形成阻挡堆叠件。阻挡堆叠件包括多层无机阻挡膜和多层聚合物膜。无机阻挡膜和聚合物膜交替设置。阻挡堆叠件的与载体相邻的膜是无机阻挡膜之一。该方法还包括在阻挡堆叠件上形成薄膜晶体管(TFT)器件层;在所述TFT器件层上形成显示介质层;在所述显示介质层上形成封装层;以及从所述阻挡堆叠件移除所述载体。
根据本公开,公开了一种无基板显示装置。无基板显示装置包括阻挡堆叠件。阻挡堆叠件包括多层无机阻挡膜和多层聚合物膜。无机阻挡膜和聚合物膜交替设置。聚合物膜中的第一聚合物膜设置在阻挡堆叠件的最下部。第一聚合物膜比其它聚合物膜厚。无基板显示装置还包括设置在阻挡堆叠件上的薄膜晶体管(TFT)器件层;显示介质层,设置在所述TFT器件层上;以及设置在所述显示介质层上的封装层。
根据本公开,公开了一种制造无基板显示装置的方法。该方法包括形成阻挡堆叠件。阻挡堆叠件包括多层无机阻挡膜和多层聚合物膜。无机阻挡膜和聚合物膜交替设置。聚合物膜中的第一聚合物膜设置在阻挡堆叠件的最下部。第一聚合物膜比其它聚合物膜厚。该方法还包括在阻挡堆叠件上形成薄膜晶体管(TFT)器件层;在TFT器件层上形成显示介质层;在显示介质层上形成封装层;以及从阻挡堆叠件移除载体。
根据本公开,以上公开的无基板显示装置进一步包括插入在载体和阻挡堆叠件之间的牺牲层或粘附控制层。
附图说明
作为示例,现在将参考示出常规实施方式和本申请的示例性实施方式的附图,其中:
图1示出了常规塑料基板的结构;
图2示出了常规塑料基板的另一种结构;
图3示出了根据本公开的一些实施方式的示例性显示设备;
图4A至图4E描绘了根据本公开的一些实施方式的形成显示装置的示例性方法;
图5A示出了根据本公开的一些实施方式的形成显示装置的示例性方法;
图5B示出了根据本公开的一些实施方式的示例性显示装置;
图5C示出了根据本公开的一些实施方式的形成显示装置的示例性方法;
图5D示出了根据本公开的一些实施方式的示例性显示装置;
图6示出了根据本公开的一些实施方式的另一示例性显示装置;
图7A至图7E描绘了根据本公开的一些实施方式的形成显示装置的示例性方法;
图8A示出了根据本公开的一些实施方式的形成显示装置的示例性方法;
图8B示出根据本公开的一些实施方式的示例性显示装置;
图8C示出了根据本公开的一些实施方式的形成显示装置的示例性方法;和
图8D示出了根据本公开的一些实施方式的示例性显示装置。
具体实施方式
在下文中,将参照附图描述根据本公开的实施方式。
图3描绘根据本公开的一些实施方式的示例性无基板显示器结构300。参考图3,显示结构300包括无机阻挡膜302、306、310、和314;与无机阻挡膜302、306、310、和314交错的聚合物膜304、308、和312;TFT器件层316,显示介质层318和顶部封装320。无机阻挡膜302、306、310、和314以及聚合物膜304、308、和312在图3中整体称为阻挡堆叠件301。如图3所示,无机阻挡膜302、306、310、和314以及聚合物膜304、308、和312交替设置。无机阻挡膜302设置在阻挡堆叠件301的与封装层相对的最外层。
无机阻挡膜302、306、310、和314的材料可以是诸如Ti、Al、Mo等的金属;或金属氧化物,例如Al2O3、TiO2,或硅氧化物或氮化物(SiO2,SiNx);或TiN;或旋涂玻璃(SOG);或旋涂电介质(SOD);或SiC或SiOC中的一种或多种,或上述材料的任何组合。无机阻挡膜302、306、310、和314中的每一个可以是上述材料的单层或多层。例如,底部阻挡膜302可以由Ti层和TiO2层组成。在一些实施方式中,底部阻挡膜302可以由诸如SiC的硬质材料制成,以防止对显示结构300的划伤。在一些实施方式中,无机阻挡膜302、306、310、和314可以使用不同的材料。例如,无机阻挡膜302、306、310、和314中的至少一个是与其它无机阻挡膜不同的材料。对于另一个实例,在一些实施方式中,底部阻挡膜302由SiC制成,而阻挡膜306、310、和314中的每一个由SiO2层和SiNx层的堆叠制成。
无机阻挡膜302、306、310、和314可以通过例如溅射、ALD、化学气相沉积(CVD)、等离子体增强CVD(PECVD)以及涂覆和固化来制备。无机阻挡膜302、306、310、和314中的每一个的厚度可以在例如10nm至10μm或20nm至500nm的范围内。在一些实施方式中,无机阻挡膜302、306、310、和314可以具有相同的厚度。在一些实施方式中,每个无机阻挡膜302、306、310、和314的厚度可以不同。例如,底部阻挡膜302可以比其他无机阻挡膜306、310、和314厚,以提高可靠性。在一些实施方式中,其上设置有TFT器件层316和显示介质层318的无机阻挡膜314可以比设置在阻挡堆叠件301内部的无机阻挡膜306、310更厚,以防止杂质扩散到器件层中。
聚合物膜304、308、和312的材料可以是例如聚酰亚胺、聚降冰片烯、聚酰胺、聚醚砜、聚醚酰亚胺、聚碳酸酯、聚萘二甲酸乙二醇酯(polyethelenenaphthalate)、聚酯、丙烯酸聚合物和尼龙中的一种或多种。聚合物膜304、308、和312可以通过涂覆这些材料的层来制备。在一些实施方案中,可以固化涂层。固化温度可以高于300℃,或约300-450℃。聚合物膜304、308、和312的厚度可以在例如100nm至100μm,或500nm至10μm,或1μm至7μm的范围内。聚合物膜304、308、和312中的每一个可以使用不同的材料并且具有不同的厚度。
如图3所示,在一些实施方式中,TFT器件层316和显示介质层318直接设置在阻挡堆叠件301上。TFT器件层316可以直接设置在无机阻挡膜314上。TFT器件层316可以包括非晶硅TFT、或多晶硅TFT、或氧化物半导体TFT、或有机TFT。显示介质层318可以是例如OLED器件层、液晶层或电泳墨水层。提供封装320以从顶侧保护TFT器件层316和显示介质层318。封装320可以是单个阻挡层,或类似于阻挡堆叠件301的阻挡堆叠件,或具有或不具有阻挡粘合剂的阻挡膜。本领域普通技术人员应当理解,聚合物膜和阻挡膜的数量不受限制。在一些实施方式中,这些膜的数量可以多于或少于七个。例如,显示装置可以具有三个阻挡膜和夹在阻挡膜之间的两个聚合物膜。作为另一示例,显示装置可以具有两个阻挡膜和夹在阻挡膜之间的一个聚合物膜。对于另一示例,显示装置可以具有九个交替膜(五个阻挡膜和四个聚合物膜交替设置)。如图3所示,显示装置300没有任何基板。因为显示结构300不包括基板,所以其比常规显示装置更柔性、更轻且更薄。
将利用附图说明形成如图3所示的显示装置的方法。参考图4A,提供了载体450。载体450可以是刚性载体,例如玻璃载体。例如,通过溅射、ALD、CVD、PECVD或涂覆和固化将第一无机阻挡膜402沉积在载体450上。阻挡膜402由一种或多种无机材料制成,例如金属,例如Ti、Al、Mo等;或金属氧化物,例如Al2O3、TiO2;或硅氧化物或氮化物,或TiN;或旋涂玻璃(SOG);或旋涂电介质(SOD);或SiC,SiOC;或这些材料中的两种或更多种的任何组合。阻挡膜402可以是单层或多层上述材料。阻挡膜402的厚度可以在例如10nm至10μm或20nm至500nm的范围内。
参考图4B,在阻挡膜402沉积在载体450上之后,将有机材料(例如单体材料或聚合物材料)沉积在阻挡膜402上,并在例如大于200℃或约300-450℃的温度固化,以通过聚合或交联形成第一聚合物膜404。聚合物膜404可以由例如聚酰亚胺、聚降冰片烯、聚酰胺、聚醚砜、聚醚酰亚胺、聚碳酸酯、聚萘二甲酸乙二醇酯、聚酯、丙烯酸聚合物或尼龙或这些材料中的两种或更多种的任意组合制成。聚合物膜404的厚度可以在例如100nm至100μm,或500nm至10μm,或1μm至7μm的范围内。
参考图4C,可以重复如图4A至图4B所述的加工步骤,直到三层聚合物膜404、408、412形成为与四个无机阻挡膜402、406、410、414交替。这些聚合物膜和阻挡膜整体称为阻挡堆叠件401。然而,聚合物膜和无机阻挡膜的数量不受限制。在一些实施方式中,这些膜的数量可以多于或少于七个。例如,在需要轻重量的应用中,阻挡堆叠件401可以包括与三层无机阻挡膜交替的两层聚合物膜。
参考图4D,TFT器件层416、OLED器件层和封装层420以此顺序沉积在阻挡堆叠件401上。由于聚合物膜404、408、412在大约200℃或更高的温度下形成,所以TFT器件层416也可以在大约200℃或更高的温度下形成,因此可以具有更好的器件性能和可靠性。在一些实施方式中,TFT器件层416可以在大约300℃或更高温度或300-450℃形成。封装层420可以是单个阻挡层,或类似于阻挡堆叠件401的阻挡堆叠件,或具有或不具有阻挡粘合剂的阻挡膜。接下来,参考图4E,载体450被移除以形成AMOLED显示装置400。载体450可以通过剥离、或化学蚀刻、或化学机械抛光(CMP)步骤、或激光处理分离步骤从AMOLED显示器400移除。
尽管上面示例说明了AMOLED显示装置400,但是当OLED器件层418被液晶层或电泳墨水层替代时,显示器可以是液晶显示器或电泳显示器。
在一些实施方式中,在将第一无机阻挡膜402沉积在载体450上之前,可在载体450上提供用于促进载体450的移除的牺牲层。例如,图5A描绘了牺牲层460沉积在载体450上并且第一无机阻挡膜402沉积在牺牲层460上。形成AMOLED显示器的其余步骤可以类似于上面关于图4B至图4E所描述的那些步骤,并且将省略描述。牺牲层460可以是单层或多层金属氧化物、金属、SiO2、玻璃、聚合物等,并且可以具有例如10nm至10μm或20nm至1μm的厚度。在移除载体450的加工步骤中,牺牲层460可以促进载体450的剥离、蚀刻、激光处理或抛光,从而减少加工时间。例如,在使用蚀刻来移除载体450的加工中,可以选择蚀刻剂以仅与牺牲层460反应,但是不与显示装置中的其它材料反应。再例如,在使用激光器移除载体450的加工中,激光器可以用正确的能量校准,并且定位为仅攻击牺牲层,而不攻击显示装置中的其它材料。在一些实施方式中,牺牲层460从AMOLED显示器400完全移除。在一些实施方式中,参考图5B,在移除载体450之后,牺牲层460的部分层保留在第一无机阻挡膜402上。
在一些实施方式中,在第一无机阻挡膜402被沉积在载体450上之前,可以在载体450上提供用于促进载体450的移除的粘附控制层。例如,图5C描绘了粘附控制层470沉积在载体450上,并且第一无机阻挡膜402沉积在粘附控制层470上。形成AMOLED显示器的其余步骤可以类似于上面关于图4B至图4E描述的步骤,并且将被省略。粘附控制层470可以是有机硅烷化合物层、六甲基二硅氮烷(HMDS)层、聚合物层等或其组合,并且具有例如0.1nm至1μm或0.1nm至100nm的厚度。在移除载体450的加工步骤中,粘附控制层470可以促进载体450的剥离、蚀刻、热(例如激光)处理或抛光,从而减少加工时间。在一些实施方式中,粘附控制层470从AMOLED显示器400完全移除。在一些实施方式中,参考图5D,在移除载体450之后,粘附控制层470保留在第一无机阻挡膜402上。
在图6中描绘了根据本公开的一些实施方式的另一示例性无基板AMOLED显示器结构600。参考图6,AMOLED显示器结构600包括阻挡堆叠件601、TFT器件层614、OLED器件层616和封装层618。阻挡堆叠件601包括三层聚合物膜602、606和610以及与聚合物膜602、606和610交替的三层无机阻挡膜604、608和612。聚合物膜602设置在阻挡堆叠件601的最下部。在一些实施方式中,聚合物膜602、606和610的厚度可以相同。在一些实施方式中,在显示器结构600的底部处的聚合物膜602可以比聚合物膜606、610和无机膜604、608和612更厚以保护这些内部膜。聚合物膜602、606和610以及无机膜604、608和612的材料和特性类似于如图3所示的AMOLED显示器结构300的聚合物膜304、308、和312以及无机阻挡膜302、306、310、和314的材料和特性,因此这里省略。
将利用附图说明形成AMOLED显示装置的方法。参考图7A,提供了载体750。载体750可以是刚性载体,例如玻璃载体。将诸如单体材料或聚合物材料的有机材料沉积在载体750上。可以固化沉积的材料以聚合或交联。可以在例如约200℃或更高温度或约300℃-450℃的温度下固化以形成第一聚合物膜702。聚合物膜702可以由例如聚酰亚胺、聚降冰片烯、聚酰胺、聚醚砜、聚醚酰亚胺、聚碳酸酯、聚萘二甲酸乙二醇酯、聚酯、丙烯酸聚合物、尼龙、或这些材料的任何组合制成。聚合物膜702的厚度可以在例如100nm至100μm,或500nm至10μm,或1μm至7μm的范围内。
参考图7B,在聚合物膜702沉积在载体750上之后,例如通过溅射、ALD、CVD、PECVD或涂覆和固化将第一阻挡膜704沉积在聚合物膜702上。阻挡膜704由一种或多种无机材料制成,例如金属,例如Ti、Al、Mo等;或金属氧化物,例如Al2O3、TiO2;或硅氧化物或氮化物;或TiN;或旋涂玻璃(SOG);或旋涂电介质(SOD);或SiC、SiOC或上述材料的任何组合。阻挡膜704可以是单层或多层上述材料。阻挡膜704的厚度可以在例如10nm至10μm或20nm至500nm的范围内。
参考图7C,可以重复如图7A和图7B所述的加工步骤,直到三层聚合物膜702、706、710形成为与三层无机阻挡膜704、708和712交替。这些聚合物膜和阻挡膜整体称为阻挡堆叠件701。然而,聚合物膜和阻挡膜的数量不受限制。在一些实施方式中,这些膜的数量可以多于或少于6个。例如,在期望轻量化的应用中,阻挡堆叠件701可以包括与两层无机阻挡膜交替的两层聚合物膜。
参考图7D,TFT器件层714、OLED器件层716和封装层718以此顺序沉积在阻挡堆叠件701上。由于聚合物膜702、706、710在约200℃或高于200℃的温度下形成,TFT器件层714也可以在约200℃或高于200℃的温度下形成,因此可以具有更好的器件性能和可靠性。在一些实施方式中,TFT器件层416可以在约300℃或高于300℃,或300℃-450℃形成。封装层718可以是单个阻挡层或与阻挡堆叠件701类似的阻挡堆叠件。接下来,参考图7E,载体750被移除以形成AMOLED显示器700。载体750可以通过剥离、或化学蚀刻、或CMP步骤、或激光处理分离步骤从AMOLED显示器700移除,如上面关于其他实施方式的讨论。
在一些实施方式中,在第一聚合物膜702被沉积到载体750上之前,可以在载体750上提供用于促进载体750的移除的牺牲层。例如,图8A描绘了牺牲层760沉积在载体上并且第一聚合物膜702沉积在牺牲层760上。形成AMOLED显示器的其余步骤可以类似于上面关于图7B至图7E所描述的步骤,并且将被省略。牺牲层760可以是单层或多层金属氧化物、金属、SiO2、玻璃或聚合物等,并且可以具有例如10nm至10μm或20nm至1μm的厚度。在移除载体750的加工步骤中,牺牲层760可以促进载体750的剥离、蚀刻、激光处理或抛光,从而减少加工时间。在一些实施方式中,牺牲层760可以从AMOLED显示器700完全移除。在一些实施方式中,参考图8B,在移除载体750之后,牺牲层760的部分层可以保留在第一聚合物膜702上。
在一些实施方式中,在第一聚合物膜702沉积在载体750上之前,可以在载体750上提供用于促进载体750的移除的粘附控制层。例如,图8B描绘了粘附控制层770沉积在载体750上并且第一聚合物膜702沉积在粘附控制层770上。形成AMOLED显示器的其余步骤可以类似于上面关于图7B至图7E描述的步骤,并且将被省略。粘附控制层770可以是有机硅烷化合物层、六甲基二硅氮烷(HMDS)层或聚合物层等或其组合,并且具有例如0.1nm至1μm或0.1nm至100nm的厚度。在移除载体750的加工步骤中,粘附控制层770可以促进载体750的剥离、蚀刻、热(例如激光)处理或抛光,从而减少加工时间。在一些实施方式中,粘附控制层770可以从AMOLED显示器700完全移除。在一些实施方式中,参考图8D,在移除载体750之后,粘附控制层770可以保留在第一聚合物膜702上。
在一些实施方式中,上述OLED层可以用液晶层或电泳墨水层替代以形成液晶显示器或电泳墨水显示器。例如,OLED器件层616或716可以用液晶层或电泳墨水层替代,使得显示器600或700可以是液晶显示器或电泳墨水显示器。此外,无基板配置可以应用于其他类型的显示器。
虽然已经示出和描述了说明性的实施方式,但是本领域技术人员应当理解,上述实施方式不能被解释为限制本公开,并且可以在不脱离本公开的精神、原理和范围本的情况下对实施方式进行改变、替换和修改。
Claims (26)
1.一种无基板显示装置,包括:
阻挡堆叠件,包括多层无机阻挡膜和多层聚合物膜,其中所述无机阻挡膜和所述聚合物膜交替设置;
薄膜晶体管(TFT)器件层,设置在所述阻挡堆叠件上;
显示介质层,设置在所述薄膜晶体管器件层上;以及
封装层,设置在所述显示介质层上,
其中所述无机阻挡膜中的一个设置在所述阻挡堆叠件的与所述封装层相对的最外层,并且所述显示装置是无基板的。
2.根据权利要求1所述的显示装置,其特征在于:所述无机阻挡膜包括金属、金属氧化物、金属氮化物、旋涂玻璃、旋涂电介质、硅氧化物、硅氮化物或硅碳化物中的一种或多种。
3.根据权利要求1所述的显示装置,其特征在于:所述聚合物膜包括聚酰亚胺、聚降冰片烯、聚酰胺、聚醚砜、聚醚酰亚胺、聚碳酸酯、聚萘二甲酸乙二醇酯、聚酯、丙烯酸聚合物或尼龙中的一种或多种。
4.根据权利要求1所述的显示装置,其特征在于:所述无机阻挡膜的厚度在10nm至10μm的范围。
5.根据权利要求1所述的显示装置,其特征在于:所述聚合物膜的厚度在100nm至100μm的范围。
6.根据权利要求1所述的显示装置,其特征在于:所述显示介质层包括有机发光二极管器件层、液晶层或电泳墨水层中的一个。
7.根据权利要求1所述的显示装置,其特征在于:所述薄膜晶体管器件层设置在所述无机阻挡膜之一上。
8.根据权利要求1所述的显示装置,其特征在于,还包括设置在所述阻挡堆叠件的与所述封装层相对的最外层的无机阻挡膜上的牺牲层或粘附控制层。
9.一种制造无基板显示装置的方法,所述方法包括:
在载体上形成阻挡堆叠件,所述阻挡堆叠件包括多层无机阻挡膜和多层聚合物膜,其中所述无机阻挡膜和所述聚合物膜交替设置,并且所述阻挡堆叠件的与所述载体相邻的膜是所述无机阻挡膜中的一个;
在所述阻挡堆叠件上形成薄膜晶体管(TFT)器件层;
在所述薄膜晶体管器件层上形成显示介质层;
在所述显示介质层上形成封装层;以及
从所述阻挡堆叠件移除所述载体。
10.根据权利要求9所述的方法,其特征在于,还包括:
在所述载体和所述阻挡堆叠件之间形成牺牲层,
其中,所述从所述阻挡堆叠件移除所述载体包括移除所述牺牲层的至少一部分。
11.根据权利要求9所述的方法,其特征在于,还包括:
在所述载体和所述阻挡堆叠件之间形成粘附控制层,
其中所述粘附控制层包括有机硅烷化合物层、六甲基二硅氮烷(HMDS)层或聚合物层、或其组合。
12.根据权利要求9所述的方法,其特征在于:所述聚合物膜在300℃-450℃的温度形成。
13.根据权利要求12所述的方法,其特征在于:所述薄膜晶体管器件层在高于300℃的温度形成。
14.一种无基板显示装置,包括:
阻挡堆叠件,包括多层无机阻挡膜和多层聚合物膜,所述无机阻挡膜和所述聚合物膜交替设置,所述聚合物膜的一第一聚合物膜设置在所述阻挡堆叠件的最下部;
薄膜晶体管(TFT)器件层,设置在所述阻挡堆叠件上;
显示介质层,设置在所述薄膜晶体管器件层上;以及
封装层,设置在所述显示介质层上,其中所述显示装置是无基板的。
15.根据权利要求14所述的显示装置,其特征在于:所述无机阻挡膜包括金属、金属氧化物、金属氮化物、旋涂玻璃、旋涂电介质、硅氧化物、硅氮化物或硅碳化物中的一种或多种。
16.根据权利要求14所述的显示装置,其特征在于:所述聚合物膜包括聚酰亚胺、聚降冰片烯、聚酰胺、聚醚砜、聚醚酰亚胺、聚碳酸酯、聚萘二甲酸乙二醇酯、聚酯或尼龙中的一种或多种。
17.根据权利要求14所述的显示装置,其特征在于,还包括设置在所述第一聚合物膜的一侧上的与所述无机阻挡膜相对的牺牲层或粘合控制层。
18.根据权利要求14所述的显示装置,其特征在于:所述无机阻挡膜的厚度在10nm至10μm的范围。
19.根据权利要求14所述的显示装置,其特征在于:所述聚合物膜的厚度在100nm至100μm的范围。
20.根据权利要求14所述的显示装置,其特征在于:显示介质层包括有机发光二极管器件层、液晶层或电泳墨水层中的一个。
21.根据权利要求14所述的显示装置,其特征在于:所述薄膜晶体管器件层设置在所述无机阻挡膜之一上。
22.一种制造无基板显示装置的方法,所述方法包括:
在载体上形成阻挡堆叠件,所述阻挡堆叠件包括多层无机阻挡膜和多层聚合物膜,所述无机阻挡膜和所述聚合物膜交替设置,所述聚合物膜的第一聚合物模设置在所述阻挡堆叠件的最下部;
在所述阻挡堆叠件上形成薄膜晶体管(TFT)器件层;
在所述薄膜晶体管器件层上形成显示介质层;
在所述显示介质层上形成封装层;以及
从所述阻挡堆叠件移除所述载体。
23.根据权利要求22所述的方法,其特征在于,还包括:
在所述载体和所述阻挡堆叠件之间形成牺牲层,其中从所述阻挡堆叠件移除所述载体包括移除至少一部分所述牺牲层。
24.根据权利要求22所述的方法,其特征在于,还包括:
在所述载体和所述阻挡堆叠件之间形成粘附控制层,
其中所述粘附控制层包括有机硅烷化合物层、六甲基二硅氮烷(HMDS)层或聚合物层、或其组合。
25.根据权利要求22所述的方法,其特征在于:所述聚合物膜在300℃-450℃的温度形成。
26.根据权利要求25所述的方法,其特征在于:所述薄膜晶体管器件层在高于300℃的温度形成。
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Also Published As
Publication number | Publication date |
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EP3183725A1 (en) | 2017-06-28 |
JP2017529572A (ja) | 2017-10-05 |
EP3183725A4 (en) | 2018-04-11 |
KR20170046730A (ko) | 2017-05-02 |
WO2016032764A1 (en) | 2016-03-03 |
US9594287B2 (en) | 2017-03-14 |
US20160056217A1 (en) | 2016-02-25 |
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