WO2017128670A1 - Cellule solaire au silicium cristallin - Google Patents

Cellule solaire au silicium cristallin Download PDF

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Publication number
WO2017128670A1
WO2017128670A1 PCT/CN2016/092197 CN2016092197W WO2017128670A1 WO 2017128670 A1 WO2017128670 A1 WO 2017128670A1 CN 2016092197 W CN2016092197 W CN 2016092197W WO 2017128670 A1 WO2017128670 A1 WO 2017128670A1
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WO
WIPO (PCT)
Prior art keywords
electrode portion
electrode
solar cell
crystalline silicon
silicon solar
Prior art date
Application number
PCT/CN2016/092197
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English (en)
Chinese (zh)
Inventor
何凤琴
张思远
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张甘霖
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Publication date
Application filed by 张甘霖 filed Critical 张甘霖
Publication of WO2017128670A1 publication Critical patent/WO2017128670A1/fr

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0224—Electrodes
    • H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
    • H01L31/022433—Particular geometry of the grid contacts
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Definitions

  • the present invention relates to the field of solar cell technologies, and in particular, to a crystalline silicon solar cell.
  • a crystalline silicon solar cell is an electronic component that converts solar energy into electrical energy.
  • the preparation of crystalline silicon solar cells is generally carried out by processes such as texturing, diffusion, coating, screen printing, and sintering.
  • the velvet is divided into single crystal and polycrystalline velvet.
  • the single crystal battery is formed by the method of alkali velvet to form a pyramid suede on the surface of the silicon wafer, and the polycrystalline battery is formed by using an acid etching method to form a pitted surface on the surface of the silicon wafer.
  • the suede surface of the silicon surface can increase the absorption of sunlight on the surface of the battery to achieve the light trapping effect; the diffusion process forms a PN junction into the interior of the silicon wafer by means of thermal diffusion, so that when light is irradiated, a voltage can be formed inside the silicon wafer. It is the basis of solar cell power generation; the coating process is to reduce the composite of minority carriers on the surface of the battery, and can improve the conversion efficiency of the crystalline silicon solar cell; the screen printing process is to make the electrode of the solar cell, so that when the light is irradiated It is possible to derive the current. Screen printing is one of the most widely used processes in the preparation of crystalline silicon cells. The process sequence is to first print and dry the back electrode, then print and dry the aluminum back field, and finally print and dry the front electrode. When sintering is performed, the silver paste used for preparing the electrode is brought into contact with the battery.
  • the electrode structure In the front electrode of the crystalline silicon solar cell, the electrode structure generally includes a main gate line and a sub-gate line which are criss-crossed, and the main gate line is electrically connected to the sub-gate line.
  • the battery When there is light, the battery generates a current, and the current flows through the internal emitter to the surface electrode sub-gate line, collects through the sub-gate line and then flows to the battery main grid for export. The current will be lost during the collection of the secondary gate line, which we call the power loss of the resistor.
  • the main grid line and the sub-gate line of the battery are on the light-receiving surface of the battery, which inevitably blocks a part of the light from being irradiated on the surface of the battery, thereby reducing the effective light-receiving area of the battery, which is called optical loss.
  • optical loss the effective light-receiving area of the battery
  • the number of main gate lines is usually three, and the width thereof is about 1.5 mm; the number of the sub-gate lines is usually 80 to 100, and the width thereof is about 40 ⁇ m.
  • the width of the main gate line is wide, so that the front electrode and the battery ribbon can be soldered well, but the light shielding area is also large.
  • the industry has proposed a front electrode structure without a main gate, which mainly removes three main gate lines in the front electrode structure, and only retains the sub-gate line. After the battery is completed, the use is extremely fine.
  • the cylindrical ribbon is directly soldered to the secondary grid and the current is directly extracted by the ribbon.
  • the power of the photovoltaic module is lowered due to the abnormality of the soldering or the inability to solder due to the small width of the sub-gate line and the sub-gate line being too low.
  • the present invention provides a crystalline silicon solar cell.
  • the front electrode structure can achieve the purpose of reducing the shading area and ensuring smooth current export; further, corresponding
  • the back electrode structure in the solar cell is improved, and the amount of silver paste in the back electrode structure is saved.
  • soldering contact is formed on the fine grid line by a secondary printing process.
  • the plurality of sub-gate lines are equally spaced along the first direction
  • the M fine gate lines are equally spaced along the second direction
  • the second direction is perpendicular to the first direction.
  • soldering contact is disposed at a position where the fine gate line intersects the sub-gate line.
  • N solder contacts on each of the fine gate lines are arranged at equal intervals along the length direction of the thin gate lines.
  • solder contacts in the front electrode are distributed in an array of N rows x M columns.
  • the electrode unit includes a first electrode portion, a second electrode portion, and a third electrode portion spaced apart from each other in the first direction, and in the first direction, the length of the second electrode portion is greater than The length of one electrode portion and the third electrode portion.
  • a ratio of lengths of the first electrode portion, the second electrode portion, and the third electrode portion is (0.4 to 0.6): 1: (0.4 to 0.6).
  • the length of the second electrode portion is 0.6 to 1 mm, and the distance between the second electrode portion and the first electrode portion and the third electrode portion is 0.3 to 0.6 mm.
  • the crystalline silicon solar cell provided by the embodiment of the present invention uses a larger number of fine gate lines with smaller widths instead of the main gate lines in the front electrode, and the overall shading area is smaller. , reducing the optical loss, and a larger number of fine grid lines are evenly distributed on the front side of the solar cell, so that the current collected by the sub-gate line can be more smoothly derived, reducing power loss; in addition, stacking on the fine grid line There is a large circular welding contact, which increases the contact area of the solder joint and the height of the solder joint. When soldering the solder ribbon, there is less problem of abnormal soldering of the solder ribbon and the battery. Further, the back electrode is divided into electrode units that are in one-to-one correspondence with the solder contacts, and the electrode unit is segmented, which effectively reduces the amount of silver paste in the back electrode structure.
  • FIG. 1 is a schematic structural view of a crystalline silicon solar cell according to an embodiment of the present invention.
  • FIG. 2 is a schematic structural view of a front electrode in an embodiment of the present invention.
  • Figure 3 is an enlarged schematic view of a portion A of Figure 2;
  • FIG. 4 is a schematic structural view of a back electrode in an embodiment of the present invention.
  • Fig. 5 is a schematic structural view of an electrode unit in an embodiment of the present invention.
  • this embodiment firstly provides a crystalline silicon solar cell mainly comprising a battery body 1 and a front electrode 2 located on the front surface of the battery body 1 and a back electrode 3 located on the back surface of the battery body 1 .
  • the battery body 1 mainly uses a silicon wafer to prepare a PN junction battery formed by a texturing process, a diffusion process, and an etching process.
  • the front electrode 2 and the back electrode 3 are mainly formed on both sides of the battery body 1 by a screen printing process for outputting the electric energy converted by the battery body 1.
  • the front electrode 2 in this embodiment includes a plurality of sub-gate lines 10 spaced apart from each other in the first direction (in the Y direction in FIG. 2) and arranged in parallel, along the second direction (eg, A plurality of fine gate lines 20 spaced apart from each other and arranged in parallel in the X direction in FIG. 2, the plurality of sub-gate lines 10 and the plurality of fine gate lines 20 being electrically connected to each other.
  • the sub-gate line 10 is mainly used to collect the photo-generated current generated by the solar cell, and the fine-gate line 20 is used to collect and output the current collected by the sub-gate line 10.
  • each of the fine gate lines 20 is further provided with a plurality of soldering contacts 30 spaced apart from each other, and the soldering contacts 30 are stacked on the fine gate lines 20 and electrically connected to the fine grid lines 20. Connected, the shape of the solder contact 30 is circular.
  • the soldering contact 30 is mainly used for soldering connection to the solder ribbon after the battery is fabricated.
  • the number of the sub-gate lines 10 may be selected from the range of 80 to 100, and the width may be selected to be in the range of 30 to 50 ⁇ m.
  • the number M of the fine gate lines 20 can be selected in the range of 10 to 20, and the width D1 can be selected in the range of 0.10 to 0.25 mm.
  • the number N of the soldering contacts 30 provided on each of the fine gate lines 20 may be selected to be in the range of 5 to 15, and the diameter R of the soldering contacts 30 may be selected to be in the range of 0.2 to 1 mm, and the soldering contacts 30 are to be satisfied.
  • the diameter R is larger than the width of the fine grid line 20.
  • the solder contacts 30 are stacked on the fine gate lines 20. Specifically, in the preparation of the front electrode structure, the sub-gate lines 10 and the fine gate lines 20 are first prepared by a single printing process, and then the solder contacts 30 are prepared on the fine gate lines 20 by a secondary printing process.
  • the plurality of sub-gate lines 10 are arranged at equal intervals in a first direction (such as the Y direction in FIG. 2), and the M thin gate lines 20 are in a second direction ( Arranged at equal intervals in the X direction as in FIG. 2, the second direction is perpendicular to the first direction.
  • the soldering contact 30 is disposed at a position where the fine gate line 20 intersects the sub-gate line 10, and N soldering contacts 30 on each of the fine gate lines 20 along the thin grid line 20 is arranged at equal intervals in the longitudinal direction.
  • the arrangement pitch of the N solder contacts 30 on each of the fine gate lines 20 is equal, and therefore, in the entire front electrode structure, all the solder contacts 30 are provided.
  • the front electrode of the crystalline silicon solar cell provided by the above embodiments can effectively reduce the light shielding area.
  • the shading area is calculated according to the front electrode of the existing three main grid and the front electrode structure provided by the embodiment of the present invention:
  • the front electrode structure of the existing three main grids In the conventional structure of three 1.5mm wide main gate lines and 90 40 ⁇ m sub grid lines, the main gate lines can be designed in a hollow form to reduce the silver paste used for printing, but all areas of the main grid will still be soldered to a width of about 1.5 mm during soldering.
  • the total occlusion area of the conventional three-main gate front electrode is 1262.6 mm 2 .
  • the number of sub-gate lines is 90 and the width is 40 ⁇ m; the number of fine gate lines is 15 and the width is 0.2 mm; the number of solder contacts on each fine grid line is 10
  • the shape of the solder contact is circular and its diameter R is 0.8 mm.
  • the back electrode 3 in this embodiment includes N ⁇ M electrode units 31, that is, the number of the electrode units 31 and the soldering contacts 30 are equal, and the electrodes
  • the unit 31 has a one-to-one correspondence with the welding contacts 30, and the lengths of the electrode units 31 in the first direction (such as the Y direction in FIG. 4) and the second direction (in the X direction in FIG. 4) are not less than The length of the soldering contact in the corresponding direction.
  • the length of the electrode unit 31 in the first direction and the second direction is not less than the diameter of the circular soldering contact 30, respectively.
  • the electrode unit 31 includes the first electrode portion 311, the second electrode portion 312, and the third electrode portion 313 spaced apart from each other in the first direction, and in the first direction, Second electrode
  • the length of the portion 312 is greater than the length of the first electrode portion 311 and the third electrode portion 313, respectively.
  • the length L21 of the second electrode portion 312 may be selected to be 0.6 to 1 mm, and the distances D21 and D22 between the second electrode portion 312 and the first electrode portion 311 and the third electrode portion 313 may be selected to be 0.3. ⁇ 0.6mm.
  • L21 and L23 can be selected as equal values
  • D21 and D22 can be selected as equal values.
  • the crystalline silicon solar cell provided by the above embodiment has a smaller number of narrow gate lines instead of the prior art main gate lines in the front electrodes, and the overall shading area is smaller and smaller.
  • the optical loss, and a larger number of fine grid lines are evenly distributed on the front side of the solar cell, so that the current collected by the sub-gate line can be more smoothly derived, reducing the power loss; in addition, the area on the fine grid line is set to be thinner.
  • Large round welded contacts increase the contact area of the solder joints and the height of the solder joints. When soldering the solder ribbon, there is less problem of abnormal soldering of the solder ribbon and the battery.
  • the back electrode is divided into electrode units that are in one-to-one correspondence with the solder contacts, and the electrode unit is segmented, which effectively reduces the amount of silver paste in the back electrode structure.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Photovoltaic Devices (AREA)

Abstract

L'invention porte sur une cellule solaire au silicium cristallin, comprenant un corps de cellule (1), ainsi qu'une électrode avant (2) positionnée au niveau de la face avant du corps de cellule (1) et une électrode arrière (3) positionnée au niveau de la face arrière du corps de cellule (1), l'électrode avant (2) comprenant de multiples lignes de grille secondaires (10) s'étendant dans une première direction et disposées en rangées à intervalles réguliers, et l'électrode avant (2) comprenant également un nombre M de lignes de grille fines (20) s'étendant dans une deuxième direction et disposées en rangées à intervalles réguliers, la largeur des lignes de grille fines (20) étant de 0,10 à 0,25 mm ; un nombre N de contacts de soudage (30) sont disposés à intervalles réguliers sur chaque ligne de grille fine (20), les contacts de soudage (30) étant stratifiés sur la ligne de grille fine (20), les contacts de soudage (30) étant circulaires, d'un diamètre supérieur à la largeur de la ligne de grille fine (20) ; l'électrode arrière (3) comprend un nombre N × M d'unités d'électrode (31), les unités d'électrode (31) et les contacts de soudage (30) étant en correspondance biunivoque, et la longueur de chaque unité d'électrode (31) dans la première direction et la deuxième direction étant supérieure ou égale à la longueur d'un contact de soudage (30) dans la direction correspondante. La surface de blocage de lumière est ainsi réduite.
PCT/CN2016/092197 2016-01-28 2016-07-29 Cellule solaire au silicium cristallin WO2017128670A1 (fr)

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CN201610058643.0A CN105679850A (zh) 2016-01-28 2016-01-28 一种晶硅太阳能电池
CN201610058643.0 2016-01-28

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CN109873054A (zh) * 2019-04-04 2019-06-11 乐山新天源太阳能科技有限公司 黑硅太阳能电池生产线
CN115377230A (zh) * 2022-09-26 2022-11-22 浙江晶科能源有限公司 太阳能电池及光伏组件
CN109873054B (zh) * 2019-04-04 2024-06-07 乐山新天源太阳能科技有限公司 黑硅太阳能电池生产线

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CN105552145B (zh) * 2016-01-28 2017-08-11 黄河水电光伏产业技术有限公司 一种晶硅太阳能电池
CN105679850A (zh) * 2016-01-28 2016-06-15 黄河水电光伏产业技术有限公司 一种晶硅太阳能电池
CN105552144B (zh) * 2016-01-28 2018-02-23 黄河水电光伏产业技术有限公司 一种晶硅太阳能电池的正面电极
CN105679849B (zh) * 2016-01-28 2018-11-02 黄河水电光伏产业技术有限公司 一种晶硅太阳能电池
CN107895748A (zh) * 2016-09-06 2018-04-10 青岛瑞元鼎泰新能源科技有限公司 高效太阳能无主栅晶硅电池片

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CN103594533A (zh) * 2013-11-26 2014-02-19 合肥海润光伏科技有限公司 一种背结-背接触太阳能电池三维电极及其制备方法
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Publication number Priority date Publication date Assignee Title
CN109873054A (zh) * 2019-04-04 2019-06-11 乐山新天源太阳能科技有限公司 黑硅太阳能电池生产线
CN109873054B (zh) * 2019-04-04 2024-06-07 乐山新天源太阳能科技有限公司 黑硅太阳能电池生产线
CN115377230A (zh) * 2022-09-26 2022-11-22 浙江晶科能源有限公司 太阳能电池及光伏组件

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