WO2017128669A1 - Cellule solaire en silicium cristallin - Google Patents
Cellule solaire en silicium cristallin Download PDFInfo
- Publication number
- WO2017128669A1 WO2017128669A1 PCT/CN2016/092195 CN2016092195W WO2017128669A1 WO 2017128669 A1 WO2017128669 A1 WO 2017128669A1 CN 2016092195 W CN2016092195 W CN 2016092195W WO 2017128669 A1 WO2017128669 A1 WO 2017128669A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electrode portion
- electrode
- solar cell
- length
- crystalline silicon
- Prior art date
Links
- 229910021419 crystalline silicon Inorganic materials 0.000 title claims abstract description 34
- 229910000679 solder Inorganic materials 0.000 claims description 53
- 238000005476 soldering Methods 0.000 claims description 34
- 238000000034 method Methods 0.000 claims description 21
- 238000007639 printing Methods 0.000 claims description 5
- 238000003466 welding Methods 0.000 abstract description 16
- 210000005056 cell body Anatomy 0.000 abstract 3
- 210000004027 cell Anatomy 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 6
- 229910052710 silicon Inorganic materials 0.000 description 6
- 239000010703 silicon Substances 0.000 description 6
- 229910052709 silver Inorganic materials 0.000 description 6
- 239000004332 silver Substances 0.000 description 6
- 238000007650 screen-printing Methods 0.000 description 5
- 238000009792 diffusion process Methods 0.000 description 4
- 238000002360 preparation method Methods 0.000 description 3
- 230000002159 abnormal effect Effects 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 230000003287 optical effect Effects 0.000 description 2
- 102220170293 rs146932796 Human genes 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- 230000005856 abnormality Effects 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000002253 acid Substances 0.000 description 1
- 239000003513 alkali Substances 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000010248 power generation Methods 0.000 description 1
- 102220015505 rs141611486 Human genes 0.000 description 1
- 102220062245 rs1800369 Human genes 0.000 description 1
- 102220101621 rs3852522 Human genes 0.000 description 1
- 102220062244 rs748527030 Human genes 0.000 description 1
- 102220059961 rs786201335 Human genes 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Abstract
L'invention concerne une cellule solaire en silicium cristallin comprenant un corps de cellule (1), ainsi qu'une électrode avant (2) positionnée au niveau de la face avant du corps de cellule (1) et une électrode arrière (3) positionnée au niveau de la face arrière du corps de cellule (1), l'électrode avant (1) comprenant de multiples lignes de grille secondaires (10) s'étendant dans une première direction (Y) et disposées en rangées à intervalles réguliers, et ladite électrode avant (2) comprenant également un nombre M de fines lignes de grille (20) s'étendant dans une seconde direction (X) et disposées en rangées à intervalles réguliers, la largeur (D1) desdites fines lignes de grille (20) étant comprise entre 0,10 et 0,25 mm ; un nombre N de contacts de soudage (30) sont disposés à intervalles sur chaque fine ligne de grille (20), les contacts de soudage (30) étant placés en couche sur la fine ligne de grille (20), les contacts de soudage (30) ayant au moins deux formes parmi les formes carrée, circulaire et elliptique, la longueur (L1) d'un côté d'un carré, le diamètre (R) d'un cercle ou la longueur (L2) du petit axe d'une ellipse étant supérieurs à la largeur (D1) d'une fine ligne de grille (20) ; l'électrode arrière (3) comprend un nombre N × M d'unités d'électrode (31), les unités d'électrode (31) et les contacts de soudage (30) étant en correspondance un à un, et la longueur de chaque unité d'électrode (31) dans la première direction (Y) et la seconde direction (X) n'étant pas inférieure à la longueur du contact de soudage (30) dans la direction correspondante.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201610058621.4 | 2016-01-28 | ||
| CN201610058621.4A CN105679849B (zh) | 2016-01-28 | 2016-01-28 | 一种晶硅太阳能电池 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| WO2017128669A1 true WO2017128669A1 (fr) | 2017-08-03 |
Family
ID=56302973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/CN2016/092195 WO2017128669A1 (fr) | 2016-01-28 | 2016-07-29 | Cellule solaire en silicium cristallin |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN105679849B (fr) |
| WO (1) | WO2017128669A1 (fr) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119497A (zh) * | 2018-08-29 | 2019-01-01 | 晶澳（扬州）太阳能科技有限公司 | 一种硅基太阳能电池结构 |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105679849B (zh) * | 2016-01-28 | 2018-11-02 | 黄河水电光伏产业技术有限公司 | 一种晶硅太阳能电池 |
| CN105552145B (zh) * | 2016-01-28 | 2017-08-11 | 黄河水电光伏产业技术有限公司 | 一种晶硅太阳能电池 |
| CN105552144B (zh) * | 2016-01-28 | 2018-02-23 | 黄河水电光伏产业技术有限公司 | 一种晶硅太阳能电池的正面电极 |
| CN106771416A (zh) * | 2016-12-20 | 2017-05-31 | 常州天合光能有限公司 | 一种便于测试的高效太阳电池及其测试装置 |
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| CN203521432U (zh) * | 2013-09-25 | 2014-04-02 | 衡水英利新能源有限公司 | 一种太阳能电池片的电极结构 |
| CN104282772A (zh) * | 2013-07-12 | 2015-01-14 | 上海神舟新能源发展有限公司 | 一种四主栅正电极太阳能晶体硅电池 |
| CN104576781A (zh) * | 2015-01-27 | 2015-04-29 | 苏州阿特斯阳光电力科技有限公司 | 一种太阳能电池 |
| CN204464295U (zh) * | 2015-01-27 | 2015-07-08 | 苏州阿特斯阳光电力科技有限公司 | 一种太阳能电池 |
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| CN102931245A (zh) * | 2012-11-28 | 2013-02-13 | 山东力诺太阳能电力股份有限公司 | 太阳电池正面栅线及印刷该正面栅线的太阳能电池片 |
| CN104218104A (zh) * | 2014-08-26 | 2014-12-17 | 南昌大学 | 一种以触盘代替主栅线的太阳电池正面电极栅线结构 |
| CN204216051U (zh) * | 2014-12-08 | 2015-03-18 | 常州天合光能有限公司 | 晶硅太阳电池的正电极结构 |
| CN204332976U (zh) * | 2015-01-27 | 2015-05-13 | 苏州阿特斯阳光电力科技有限公司 | 一种太阳能电池的正面电极结构 |
| CN204632769U (zh) * | 2015-05-29 | 2015-09-09 | 苏州阿特斯阳光电力科技有限公司 | 一种多主栅太阳能电池的背面电极结构 |
-
2016
- 2016-01-28 CN CN201610058621.4A patent/CN105679849B/zh active Active
- 2016-07-29 WO PCT/CN2016/092195 patent/WO2017128669A1/fr active Application Filing
Patent Citations (10)
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| CN203415587U (zh) * | 2013-06-27 | 2014-01-29 | 江阴鑫辉太阳能有限公司 | 五主栅高效率太阳能电池 |
| CN104282772A (zh) * | 2013-07-12 | 2015-01-14 | 上海神舟新能源发展有限公司 | 一种四主栅正电极太阳能晶体硅电池 |
| CN203521432U (zh) * | 2013-09-25 | 2014-04-02 | 衡水英利新能源有限公司 | 一种太阳能电池片的电极结构 |
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| CN204464295U (zh) * | 2015-01-27 | 2015-07-08 | 苏州阿特斯阳光电力科技有限公司 | 一种太阳能电池 |
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| CN105679850A (zh) * | 2016-01-28 | 2016-06-15 | 黄河水电光伏产业技术有限公司 | 一种晶硅太阳能电池 |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109119497A (zh) * | 2018-08-29 | 2019-01-01 | 晶澳（扬州）太阳能科技有限公司 | 一种硅基太阳能电池结构 |
| CN109119497B (zh) * | 2018-08-29 | 2024-04-05 | 晶澳（扬州）太阳能科技有限公司 | 一种硅基太阳能电池结构 |
Also Published As
| Publication number | Publication date |
|---|---|
| CN105679849A (zh) | 2016-06-15 |
| CN105679849B (zh) | 2018-11-02 |
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